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Nakamura Yoshiaki

中村 芳明

Graduate School of Engineering Science Department of Systems Innovation, Professor

keyword GeSn,FeSi2,Si,Quantum dot

Education

  • 1999/04 - 2002/03, The University of Tokyo, The Graduate School of Engineering
  • 1997/04 - 1999/03, The University of Tokyo, Graduate School of Engineering, Department of Applied Physics
  • 1995/04 - 1997/03, The University of Tokyo, The Faculty of Engineering, Department of Applied Physics
  • 1993/04 - 1995/03, The University of Tokyo

Research Areas

  • Nanotechnology/Materials, Nanomaterials
  • Nanotechnology/Materials, Nanostructure physics
  • Nanotechnology/Materials, Nanostructure chemistry
  • Nanotechnology/Materials, Thin-film surfaces and interfaces

Professional Memberships

  • The Surface Society of Japan
  • The Physical Society of Japan
  • The Japan Society of Applied Physics
  • 日本表面科学会
  • 応用物理学会
  • 日本物理学会

Papers

  • Carrier and phonon transport control by domain engineering for high-performance transparent thin film thermoelectric generator, Takafumi Ishibe,Atsuki Tomeda,Yuki Komatsubara,Reona Kitaura,Mutsunori Uenuma,Yukiharu Uraoka,Yuichiro Yamashita,Yoshiaki Nakamura, Applied Physics Letters, AIP Publishing, Vol. 118, No. 15, p. 151601-151601, 2021/04/12
  • Direct mapping of temperature-difference-induced potential variation under non-thermal equilibrium, Yuki Komatsubara,Takafumi Ishibe,Yuji Miyato,Shunya Sakane,Yoshiaki Nakamura, Applied Physics Letters, AIP Publishing, Vol. 118, No. 9, p. 091605-091605, 2021/03/01
  • Formation of Silicon Quantum Dots Sheet on a Nonmetallic CaF 2 Surface, Kenji Ito,Hideyuki Nakano,Yoshiaki Nakamura, Advanced Materials Interfaces, Wiley, p. 2001295-2001295, 2020/10/14
  • Thermoelectric Si1−xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators, Tatsuhiko Taniguchi,Takafumi Ishibe,Ryoya Hosoda,Youya Wagatsuma,Md. Mahfuz Alam,Kentarou Sawano,Mutsunori Uenuma,Yukiharu Uraoka,Yuichiro Yamashita,Nobuya Mori,Yoshiaki Nakamura, Applied Physics Letters, AIP Publishing, Vol. 117, No. 14, p. 141602-141602, 2020/10/05
  • Control of thermoelectric properties in Mn-substituted Fe2TiSi epilayers, Y. Shimanuki,S. Yamada,A. Masago,T. Ishibe,K. Kudo,Y. Nakamura,K. Hamaya, Physical Review B, American Physical Society (APS), Vol. 102, No. 5, 2020/08/04
  • An advanced 2ω method enabling thermal conductivity measurement for various sample thicknesses: From thin films to bulk materials, Kosuke Mitarai,Ryo Okuhata,Jinichiro Chikada,Tatsuya Kaneko,Yuto Uematsu,Yuki Komatsubara,Takafumi Ishibe,Yoshiaki Nakamura, Journal of Applied Physics, AIP Publishing, Vol. 128, No. 1, p. 015102-015102, 2020/07/07
  • Low thermal conductivity in single crystalline epitaxial germanane films, Yuto Uematsu,Tsukasa Terada,Kento Sato,Takafumi Ishibe,Yoshiaki Nakamura, Applied Physics Express, IOP Publishing, Vol. 13, No. 5, p. 055503-055503, 2020/05/01
  • High Thermoelectric Power Factor Realization in Si-Rich SiGe/Si Superlattices by Super-Controlled Interfaces, Tatsuhiko Taniguchi,Takafumi Ishibe,Nobuyasu Naruse,Yutaka Mera,Md. Mahfuz Alam,Kentarou Sawano,Yoshiaki Nakamura, ACS Applied Materials & Interfaces, 2020/05
  • Impact of metal silicide nanocrystals on the resistance ratio in resistive switching of epitaxial Fe3O4 films on Si substrates, Takafumi Ishibe,Yuto Uematsu,Nobuyasu Naruse,Yutaka Mera,Yoshiaki Nakamura, Applied Physics Letters, Vol. 116, 2020/05
  • Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces, T. Ishibe,Y. Maeda,T. Terada,N. Naruse,Y. Mera,E. Kobayashi,Y. Nakamura, Science and Technology of Advanced Materials, Vol. 21, p. 195-204, 2020/03
  • Thermoelectric properties of single-phase full-Heusler alloy Fe2TiSi films with D03-type disordering, Y. Shimanuki, K. Kudo, T. Ishibe, A. Masago, S. Yamada, Y. Nakamura, and K. Hamaya, Journal of Applied Physics, Vol. 127, 2020/01
  • Nanostructural effect on thermoelectric properties in Si films containing iron silicide nanodots, Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Takahiro Hinakawa, Ryoya Hosoda, Kosei Mizuta, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura, Japanese Journal of Applied Physics, Vol. 59, p. SFFB01-1-1-05, 2020/01
  • Methodology of Thermoelectric Power Factor Enhancement by Nanoscale Thermal Management in Bulk SiGe Composites, Shunya Sakane, Takafumi Ishibe, Kosei Mizuta, Masato Kashino, Kentaro Watanabe, Takeshi Fujita, Yoshinari Kamakura, Nobuya Mori, and Yoshiaki Nakamura, ACS Applied Energy Materials, Vol. 3, p. 1235-1241, 2019/12
  • Modulation of lattice constants by changing the composition and strain in incommensurate Nowotny chimney-ladder phase FeGeγ epitaxially grown on Si, Tsukasa Terada,Takafumi Ishibe,Yoshiaki Nakamura, Surface Science, Vol. 690, 2019/12
  • Bottom‐Up on Surface Synthesis of Two‐Dimensional Graphene Nanoribbon Networks and Their Thermoelectric Applications, Takahiro Nakae,Takahiro Kojima,Zhen Xu,Saravanan Chinnusamy,Kentaro Watanabe,Yoshiaki Nakamura,Hiroshi Sakaguchi, Chemistry – An Asian Journal, 2019/11
  • High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity, Shunya Sakane,Takafumi Ishibe,Takahiro Hinakawa,Nobuyasu Naruse,Yutaka Mera,Md. Mahfuz Alam,Kentarou Sawano,Yoshiaki Nakamura, Applied Physics Letters, Vol. 115, 2019/10
  • Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures, Shunya Sakane,Takafumi Ishibe,Tatsuhiko Taniguchi,Nobuyasu Naruse,Yutaka Mera,Takeshi Fujita,Md. Mahfuz Alam,Kentarou Sawano,Nobuya Mori,Yoshiaki Nakamura, Materials Today Energy, Vol. 13, p. 56-63, 2019/09
  • Modulation of lattice constants by changing the composition and strain in incommensurate Nowotny chimney-ladder phase FeGeγ epitaxially grown on Si, Tsukasa Terada,Takafumi Ishibe,Yoshiaki Nakamura, Surface Science, Vol. 690, 2019/07
  • Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures, Shunya Sakane,Takafumi Ishibe,Tatsuhiko Taniguchi,Nobuyasu Naruse,Yutaka Mera,Takeshi Fujita,Md. Mahfuz Alam,Kentarou Sawano,Nobuya Mori,Yoshiaki Nakamura, Materials Today Energy, Vol. 13, p. 56-63, 2019/05
  • Semiconductor Nanostructure Design for Thermoelectric Property Control, Y. Nakamura,T. Ishibe,T. Taniguchi,T. Terada,R. Hosoda,S. Sakane, International Journal of Nanoscience, 2019/03
  • Significant reduction in the thermal conductivity of Si-substituted Fe2VAl epilayers, K. Kudo,S. Yamada,J. Chikada,Y. Shimanuki,T. Ishibe,S. Abo,H. Miyazaki,Y. Nishino,Y. Nakamura,K. Hamaya, Physical Review B, Vol. 99, No. 5, p. 054201-1-054201-7, 2019/02/01
  • Semiconductor Nanostructure Design for Thermoelectric Property Control, Y. Nakamura,T. Ishibe,T. Taniguchi,T. Terada,R. Hosoda,S. Sakane, International Journal of Nanoscience, Vol. 18, p. 19040036-1-19040036-8, 2019
  • Methodology of thermoelectric power factor enhancement by controlling nanowire interface, Takafumi Ishibe,Atsuki Tomeda,Kentaro Watanabe,Yoshinari Kamakura,Nobuya Mori,Nobuyasu Naruse,Yutaka Mera,Yuichiro Yamashita,Yoshiaki Nakamura, ACS Applied Materials & Interfaces, Vol. 10, No. 43, p. 37709-37716, 2018/10
  • Thermoelectric properties of epitaxial Ge thin films on Si(001) with strong crystallinity dependence, Applied Physics Express, Vol. 11, p. 111301-1-111301-1-4, 2018/10
  • Resistive switching at the high quality metal/insulator interface in Fe3O4/SiO2/a-FeSi2/Si stacking structure, Takafumi Ishibe,Tsubasa Kurokawa,Nobuyasu Naruse,Yoshiaki Nakamura, Applied Physics Letters, Vol. 113, p. 141601-1-5, 2018/10
  • Enhanced thermoelectric performance of Ga-doped ZnO film by controlling crystal quality for transparent thermoelectric films, Vol. 666, p. 185-190, 2018/10
  • Formation of various epitaxial nanodots in Si films for thermoelectric materials, Sakane Shunya,Watanabe Kentaro,Fujita Takeshi,Naruse Nobuyasu,Nakamura Yoshiaki, Journal of Physics: Conference Series, Vol. 1052, 2018/07
  • Thermoelectric performances in transparent ZnO films including nanowires as phonon scatterers, Ishibe Takafumi,Tomeda Atsuki,Watanabe,Kentaro,Nakamura Yoshiaki, Journal of Physics: Conference Series, Vol. 1052, 2018/07
  • Areal density control of ZnO nanowires in physical vapor transport using Ge nanocrystals, Takafumi Ishibe,Tatsuhiko Taniguchi,Tsukasa Terada,Atsuki Tomeda,Kentaro Watanabe,Yoshiaki Nakamura, Vol. 57, p. 08NB07-1-5, 2018/07
  • Growth of epitaxial FeGeg nanocrystals with incommensurate Nowtny chimney-ladder phase on Si substrate, Tsukasa Terada,Takafumi Ishibe,Kentaro Watanabe,Yoshiaki Nakamura, Vol. 57, 2018/06
  • Effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films, Kohei Kudo,Shinya Yamada,Jinichiro Chikada,Yuta Shimakuni,Yoshiaki Nakamura,Kohei Hamaya, Japanese Journal of Applied Physics, Vol. 57, 2018/02
  • Ultimate Confinement of Phonon Propagation in Silicon Nanocrystalline Structure, Takafumi Oyake,Lei Feng,Takuma Shiga,Masayuki Isogawa,Yoshiaki Nakamura,Junichiro Shiomi, Physical Review Letters, American Physical Society, Vol. 120, No. 4, 2018/01/25
  • Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates, Hideki Matsui,Takafumi Ishibe,Tsukasa Terada,Shunya Sakane,Kentaro Watanabe,Shotaro Takeuchi,Akira Sakai,Shigeru Kimura,Yoshiaki Nakamura, Applied Physics Letters, American Institute of Physics Inc., Vol. 112, No. 3, 2018/01/15
  • Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity, Yoshiaki Nakamura, Science and Technology of Advanced Materials, Taylor and Francis Ltd., Vol. 19, No. 1, p. 31-43, 2018/01/01
  • Nanostructure design for control of phonon andelectron transports, Nakamura Yoshiaki,Watanabe Kentaro, ECS Transactions, Vol. 80, No. 1, p. 93-100, 2017/10
  • Low thermal conductivity of thermoelectric Fe2VAl films, Shinya Yamada,Kohei Kudo,Ryo Okuhata,Jinichiro Chikada,Yoshiaki Nakamura,Kohei Hamaya, Applied Physics Express, Vol. 10, 2017/10
  • Epitaxial multilayers of beta-FeSi2 nanodots/Si for Si-based nanostructured electronic materials, Shunya Sakane,Masayuki Isogawa,Kentaro Watanabe,Jun Kikkawa,Shotaro Takeuchi,Akira Sakai,Yoshiaki Nakamura, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, A V S AMER INST PHYSICS, Vol. 35, No. 4, 2017/07
  • Embedded-ZnO Nanowire Structure for High-Performance Transparent Thermoelectric Materials, Takafumi Ishibe,Atsuki Tomeda,Kentaro Watanabe,Jun Kikkawa,Takeshi Fujita,Yoshiaki Nakamura, JOURNAL OF ELECTRONIC MATERIALS, SPRINGER, Vol. 46, No. 5, p. 3020-3024, 2017/05
  • Thermal Conductivity Measurement of Thermoelectric Thin Films by a Versatility-Enhanced 2 omega Method, Ryo Okuhata,Kentaro Watanabe,Satoaki Ikeuchi,Akihiro Ishida,Yoshiaki Nakamura, JOURNAL OF ELECTRONIC MATERIALS, SPRINGER, Vol. 46, No. 5, p. 3089-3096, 2017/05
  • Thermoelectric Properties of Epitaxial beta-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement, Tatsuhiko Taniguchi,Shunya Sakane,Shunsuke Aoki,Ryo Okuhata,Takafumi Ishibe,Kentaro Watanabe,Takeyuki Suzuki,Takeshi Fujita,Kentarou Sawano,Yoshiaki Nakamura, JOURNAL OF ELECTRONIC MATERIALS, SPRINGER, Vol. 46, No. 5, p. 3235-3241, 2017/05
  • Thermoelectric properties of epitaxial beta-FeSi2 thin films grown on Si(111) substrates with various film qualities, Kentaro Watanabe,Tatsuhiko Taniguchi,Shunya Sakane,Shunsuke Aoki,Takeyuki Suzuki,Takeshi Fujita,Yoshiaki Nakamura, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 56, No. 5, p. 05DC04-1-05DC04-5, 2017/05
  • INDEPENDENT CONTROL OF PHONON AND ELECTRON TRANSPORT IN SI-BASED NANOARCHITECTURES WITH EPITAXIAL GE NANODOTS, Watanabe Kentaro,Yamasaka Shuto,Ishibe Takafumi,Sakane Shunya,Sawano Kentarou,Nakamura Yoshiaki, Proceedings of 1st Asian Conference onThermal Sciences 2017 (ACTS 2017), p. 1-3, 2017/03
  • 極薄Si酸化膜技術を用いたナノ構造界面設計による熱電物性制御, Vol. 52, p. 71-77, 2017/02
  • Study on the influence of different trench-patterned templates on the crystalline microstructure of AIN epitaxial films by X-ray microdiffraction, Dinh Thanh Khan,Shotaro Takeuchi,Yoshiaki Nakamura,Kunihiko Nakamura,Takuji Arauchi,Hideto Miyake,Kazumasa Hiramatsu,Yasuhiko Imai,Shigeru Kimura,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 56, No. 2, p. 025502-1-025502-5, 2017/02
  • Amorphous/epitaxial superlattice for thermoelectric application, Akihiro Ishida,Hoang Thi Xuan Thao,Mamoru Shibata,Seisuke Nakashima,Hirokazu Tatsuoka,Hidenari Yamamoto,Yohei Kinoshita,Mamoru Ishikiriyama,Yoshiaki Nakamura, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Vol. 55, No. 8, 2016/08/01
  • Effect of Fe coating of nucleation sites on epitaxial growth of Fe oxide nanocrystals on Si substrates, Takafumi Ishibe,Kentaro Watanabe,Yoshiaki Nakamura, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 55, No. 8, 2016/08
  • Nanostructure driven defect control in GaN grown by the Na flux method, 2016/06
  • Epitaxial iron oxide nanocrystals with memory function grown on Si substrates, Takafumi Ishibe,Hideki Matsui,Kentaro Watanabe,Shotaro Takeuchi,Akira Sakai,Yoshiaki Nakamura, APPLIED PHYSICS EXPRESS, IOP PUBLISHING LTD, Vol. 9, No. 5, 2016/05
  • Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Technique, Tomohiro Ueda,Shunya Sakane,Takafumi Ishibe,Kentaro Watanabe,Shotaro Takeuchi,Akira Sakai,Yoshiaki Nakamura, JOURNAL OF ELECTRONIC MATERIALS, SPRINGER, Vol. 45, No. 3, p. 1914-1920, 2016/03
  • Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials, Shuto Yamasaka,Kentaro Watanabe,Shunya Sakane,Shotaro Takeuchi,Akira Sakai,Kentarou Sawano,Yoshiaki Nakamura, SCIENTIFIC REPORTS, NATURE PUBLISHING GROUP, Vol. 6, No. 22838, p. 1-8, 2016/03
  • Arbitrary cross-section SEM-cathodoluminescence imaging of growth sectors and local carrier concentrations within micro-sampled semiconductor nanorods, Kentaro Watanabe,Takahiro Nagata,Seungjun Oh,Yutaka Wakayama,Takashi Sekiguchi,Janos Volk,Yoshiaki Nakamura, NATURE COMMUNICATIONS, NATURE PUBLISHING GROUP, Vol. 7, 2016/02
  • Epitaxial growth of iron oxide nanodots on Si substrate using Fe-coated Ge nuclei, 2015/12
  • Observation of covering epitaxial β-FeSi2 nanodots with Si for fabricating Si/β-FeSi2 nanodots stacked structures, 2015/12
  • Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN, S. Takeuchi,H. Asazu,M. Imanishi,Y. Nakamura,M. Imade,Y. Mori,A. Sakai, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 118, No. 24, 2015/12
  • ナノドットを用いたシリコン熱電変換材料の開発と応用, p. 48-50, 2015/10
  • Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials, Shuto Yamasaka,Yoshiaki Nakamura,Tomohiro Ueda,Shotaro Takeuchi,Akira Sakai, SCIENTIFIC REPORTS, NATURE PUBLISHING GROUP, Vol. 5, No. 14490, p. 1-9, 2015/10
  • Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application, Yoshiaki Nakamura,Masakazu Ichikawa, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 54, No. 7, 2015/07
  • Phonon scattering control by structure of epitaxial Ge nanodots in Si, 2015/07
  • Thermal conductivity reduction and carrier doping in the Si nanoarchitecture including epitaxial nanodots, 2015/07
  • Fabrication of Si Thermoelectric Nanomaterials Containing Ultrasmall Epitaxial Ge Nanodots with an Ultrahigh Density, Shuto Yamasaka,Yoshiaki Nakamura,Tomohiro Ueda,Shotaro Takeuchi,Yuta Yamamoto,Shigeo Arai,Takayoshi Tanji,Nobuo Tanaka,Akira Sakai, JOURNAL OF ELECTRONIC MATERIALS, SPRINGER, Vol. 44, No. 6, p. 2015-2020, 2015/06
  • Fabrication of Si Thermoelectric Nanomaterials Containing Ultrasmall Epitaxial Ge Nanodots with an Ultrahigh Density, Shuto Yamasaka,Yoshiaki Nakamura,Tomohiro Ueda,Shotaro Takeuchi,Yuta Yamamoto,Shigeo Arai,Takayoshi Tanji,Nobuo Tanaka,Akira Sakai, JOURNAL OF ELECTRONIC MATERIALS, SPRINGER, Vol. 44, No. 6, p. 2015-2020, 2015/06
  • Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films grown on (22-43) patterned sapphire substrates, Shotaro Takeuchi,Toshiro Uchiyama,Takuji Arauchi,Yasuhiro Hashimoto,Yoshiaki Nakamura,Keisuke Yamane,Narihito Okada,Kazuyuki Tadatomo,Akira Sakai, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, WILEY-V C H VERLAG GMBH, Vol. 252, No. 5, p. 1142-1148, 2015/05
  • Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy, Takuji Arauchi,Shotaro Takeuchi,Yasuhiro Hashimoto,Yoshiaki Nakamura,Keisuke Yamane,Narihito Okada,Yasuhiko Imai,Shigeru Kimura,Kazuyuki Tadatomo,Akira Sakai, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, WILEY-V C H VERLAG GMBH, Vol. 252, No. 5, p. 1149-1154, 2015/05
  • Anomalous reduction of thermal conductivity in coherent nanocrystal architecture for silicon thermoelectric material, Yoshiaki Nakamura,Masayuki Isogawa,Tomohiro Ueda,Shuto Yamasaka,Hideki Matsui,Jun Kikkawa,Satoaki Ikeuchi,Takafumi Oyake,Takuma Hori,Junichiro Shiomi,Akira Sakai, NANO ENERGY, ELSEVIER, Vol. 12, p. 845-851, 2015/03
  • Formation and optical properties of Ge films grown on Si(111) substrates using nanocontact epitaxy, Kazuki Tanaka,Yoshiaki Nakamura,Shuto Yamasaka,Jun Kikkawa,Takenobu Sakai,Akira Sakai, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 325, p. 170-174, 2015/01
  • Formation and optical properties of Ge films grown on Si(111) substrates using nanocontact epitaxy, Kazuki Tanaka,Yoshiaki Nakamura,Shuto Yamasaka,Jun Kikkawa,Takenobu Sakai,Akira Sakai, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 325, No. 15, p. 170-174, 2015/01
  • MicroscopiccrystallinestructureofathickAlN film grown on atrench-patternedAlN/α-Al2O3 template, D.T.Khan,S.Takeuchi,Yoshiaki Nakamura,K.Nakamura,T.Arauchi,H.Miyake,K. Hiramatsu,Y.Imai,S.Kimura,A.Sakai, J. Cryst. Growth, Vol. 411, p. 38-44, 2014/11
  • Self-assembly of Ge clusters on highly oriented pyrolytic graphite surfaces, Masayuki Shimonaka,Yoshiaki Nakamura,Jun Kikkawa,Akira Sakai, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 628, p. 82-85, 2014/10
  • Behaviors of dislocations in GaN crystals grown on point seeds in the Na-Flux coalescence growth, 2014/08
  • Electrical conduction characteristics of single crystal and directly-bonded Nb-doped SrTiO3, R. Asada,S. Kondo,S. Takeuchi,Y. Sugi,Y. Nakamura,A. Sakai, 2014/08
  • Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers, Yoshihiko Moriyama,Keiji Ikeda,Shotaro Takeuchi,Yuuichi Kamimuta,Yoshiaki Nakamura,Koji Izunome,Akira Sakai,Tsutomu Tezuka, APPLIED PHYSICS EXPRESS, IOP PUBLISHING LTD, Vol. 7, No. 8, 2014/08
  • Thermal and electrical properties of Si films including epitaxial Ge nanodot phonon-scatterers, 2014/07
  • Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces, A. A. Shklyaev,O. A. Shegai,Y. Nakamura,M. Ichikawa, Journal of Applied Physics, American Institute of Physics Inc., Vol. 115, No. 20, 2014/05/28
  • Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template, Takuji Arauchi,Shotaro Takeuchi,Kunihiko Nakamura,Dinh Thanh Khan,Yoshiaki Nakamura,Hideto Miyake,Kazumasa Hiramatsu,Akira Sakai, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, WILEY-V C H VERLAG GMBH, Vol. 211, No. 4, p. 731-735, 2014/04
  • Dislocation behavior of surface-oxygen-concentration controlled Si wafers, Hirotada Asazu,Shotaro Takeuchi,Hiroya Sannai,Haruo Sudo,Koji Araki,Yoshiaki Nakamura,Koji Izunome,Akira Sakai, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 557, p. 106-109, 2014/04
  • Improvement effect of electrical properties in post- annealed waferbonded Ge(001)- OI substrate, Shuto Yamasaka,Yoshiaki Nakamura,Osamu Yoshitake,Jun Kikkawa,Koji Izunome,Akira Sakai, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, WILEY-V C H VERLAG GMBH, Vol. 211, No. 3, p. 601-605, 2014/03
  • Anomalous reduction of thermal conductivity of stacked epitaxial Si nanodot structures, 2014/02
  • Introduction of Ultrahigh Density Ge Nanodots into Si Films for Si Based Thermoelectric Materials, 2014/02
  • Luminescence properties of Si-capped beta-FeSi2 nanodots epitaxially grown on Si(001) and (111) substrates, Shogo Amari,Yoshiaki Nakamura,Masakazu Ichikawa, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 115, No. 8, 2014/02
  • Nanoscale-resolved near-infrared photoabsorption spectroscopy and imaging of individual gallium antimonide quantum dots, Nobuyasu Naruse,Yoshiaki Nakamura,Yutaka Mera,Masakazu Ichikawa,Koji Maeda, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, Vol. 32, No. 1, 2014/01
  • Improvement of Current Drive of Ge-nMISFETs by Epitaxially Grown n(+)-Ge:P Source and Drain, Yoshihiko Moriyama,Yuuichi Kamimuta,Yoshiki Kamata,Keiji Ikeda,Shotaro Takeuchi,Yoshiaki Nakamura,Akira Sakai,Tsutomu Tezuka, 2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), IEEE, p. 35-36, 2014
  • Nanoscale-resolved near-infrared photoabsorption spectroscopy and imaging of individual gallium antimonide quantum dots, Nobuyasu Naruse,Yoshiaki Nakamura,Yutaka Mera,Masakazu Ichikawa,Koji Maeda, Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, American Institute of Physics Inc., Vol. 32, No. 1, 2014/01/01
  • Control of epitaxial growth of Fe-based nanocrystals on Si substrates using well-controlled nanometer-sized interface, Yoshiaki Nakamura,Ryota Sugimoto,Takafumi Ishibe,Hideki Matsui,Jun Kikkawa,Akira Sakai, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 115, No. 4, 2014/01
  • Microscopic structure analysis of a thick AIN film grown on a trench-patterned AIN/sapphire template by X-ray microdiffraction, 2013/09
  • Variation of local residual strain and twist angle in growth direction of AIN films on trench-patterned 6H-SiC substrates, 2013/09
  • Characterization of Ge Films on Si(001) Substrates Grown by Nanocontact Epitaxy, Wataru Ikeda,Yoshiaki Nakamura,Shogo Okamoto,Shotaro Takeuchi,Jun Kikkawa,Masakazu Ichikawa,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 52, No. 9, 2013/09
  • Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas, Hironobu Hamanaka,Yoshiaki Nakamura,Takafumi Ishibe,Jun Kikkawa,Akira Sakai, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 114, No. 11, 2013/09
  • Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces, Sung-Pyo Cho,Yoshiaki Nakamura,Jun Yamasaki,Eiji Okunishi,Masakazu Ichikawa,Nobuo Tanaka, Journal of Applied Crystallography, Vol. 46, No. 4, p. 1076-1080, 2013/08
  • Conductive optical-fiber STM probe for local excitation and collection of cathodoluminescence at semiconductor surfaces, Kentaro Watanabe,Yoshiaki Nakamura,Masakazu Ichikawa, OPTICS EXPRESS, OPTICAL SOC AMER, Vol. 21, No. 16, p. 19261-19268, 2013/08
  • Epitaxial growth of stacked β-FeSi2 nanodots on Si substrates and their thermoelectric properties, 2013/07
  • Introduction of Ge nanodots in Si films as phonon scatterers and the thermal conductivity reduction, 2013/07
  • Reduction of contact resistance on selectively grown phosphorus-doped n+-Ge layers, 2013/06
  • Semiconductor wafer bonding -Structural and electrical characteristics of GeOI substrates, A. Sakai,S. Yamasaka,Y. Moriyama,J. Kikkawa,S. Takeuchi,Y. Nakamura,T. Tezuka,K. Izunome, 2013 Asia-Pacific Workshop on Fundamentals and applications of Advanced Semmiconductor Devices, 2013/06
  • Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers, Yoshihiko Moriyama,Keiji Ikeda,Yuuichi Kamimuta,Minoru Oda,Toshifumi Irisawa,Yoshiaki Nakamura,Akira Sakai,Tsutomu Tezuka, SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 83, p. 42-45, 2013/05
  • Formation mechanism of peculiar structures on vicinal Si(1 1 0) surfaces, M. Yamashita,Y. Nakamura,R. Sugimoto,J. Kikkawa,K. Izunome,A. Sakai, Applied Surface Science, Vol. 267, No. 15, p. 53-57, 2013/02/15
  • Investigating the origin of intense photoluminescence in Si capping layer on Ge1-xSnx nanodots by transmission electron microscopy, Jun Kikkawa,Yoshiaki Nakamura,Norihito Fujinoki,Masakazu Ichikawa, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 113, No. 7, 2013/02
  • Structural analysis of vicinal Si(110) surfaces with various off-angles, M. Yamashita,Y. Nakamura,A. Yamamoto,J. Kikkawa,K. Izunome,A. Sakai, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 267, No. 15, p. 136-140, 2013/02
  • Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al<inf>2</inf>O<inf>3</inf> template, D. T. Khan,S. Takeuchi,J. Kikkawa,Y. Nakamura,H. Miyake,K. Hiramatsu,Y. Imai,S. Kimura,O. Sakata,A. Sakai, Journal of Crystal Growth, Vol. 381, p. 37-42, 2013
  • Distribution of Local Strain in Facet Controlled ELO (FACELO) GaN by X-ray Micro Diffraction, 2012/12
  • Structural- and electrical characteristics of GeOI/BOX interfaces of bonded GeOI substrates with thin Al2O3/SiO2 hybrid BOX layers, 2012/11
  • Formation technique of stacked epitaxial Si nanodot structures and their thermal conductivity, 2012/11
  • GOI substrates -Fabrication and characterization-, A. Sakai,S. Yamasaka,J. Kikkawa,Y. Nakamura,Y. Moriyama,T. Tezuka,S. Takeuchi,K. Izunome, ECS Transactions, Vol. 50, No. 9, p. 709-725, 2012/10
  • Electron-beam-induced current study of electrocal property change at SrTiO3 bicrystal interface induced by forming process, T. Kato,Y. Nakamura,P. P. T. Son,J. Kikkawa,A. Sakai, Materials Science Forum, Vol. 725, p. 261-264, 2012/06
  • Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure, Kentaro Watanabe,Masakazu Ichikawa,Yoshiaki Nakamura,Shigeyuki Kuboya,Ryuji Katayama,Kentaro Onabe, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, Vol. 30, No. 2, 2012/03
  • Vertical dislocations in Ge films selectively grown in submicron Si windows of patterned substrates, S. Harada,J. Kikkawa,Y. Nakamura,G. Wang,M. Caymax,A. Sakai, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 520, No. 8, p. 3245-3248, 2012/02
  • Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method, K. Minami,Y. Nakamura,S. Yamasaka,O. Yoshitake,J. Kikkawa,K. Izunome,A. Sakai, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 520, No. 8, p. 3232-3235, 2012/02
  • High density iron silicide nanodots formed by ultrathin SiO2 film technique, Yoshiaki Nakamura, Procedia Engineering, Elsevier Ltd, Vol. 36, p. 382-387, 2012
  • Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure, Kentaro Watanabe,Masakazu Ichikawa,Yoshiaki Nakamura,Shigeyuki Kuboya,Ryuji Katayama,Kentaro Onabe, Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, AVS Science and Technology Society, Vol. 30, No. 2, 2012
  • Nanocontact Epitaxy of Thin Films on Si Substrates Using Nanodot Seeds Fabricated by Ultrathin SiO2 Film Technique, Yoshiaki Nakamura,Masakazu Ichikawa, DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES, ELECTROCHEMICAL SOC INC, Vol. 45, No. 3, p. 41-45, 2012
  • Epitaxial Growth of Iron-Silicide Nanodots on Si Substrates Using Ultrathin SiO2 Film Technique and Their Physical Properties, Yoshiaki Nakamura,Masakazu Ichikawa, LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 5 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 54 (SOTAPOCS 54), ELECTROCHEMICAL SOC INC, Vol. 50, No. 6, p. 65-70, 2012
  • Fabrication of bonded GeOI substrates with thin Al 2O 3/SiO 2 buried oxide layers, Yoshihiko Moriyama,Keiji Ikeda,Yuuichi Kamimuta,Minoru Oda,Toshifumi Irisawa,Yoshiaki Nakamura,Akira Sakai,Tsutomu Tezuka, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, p. 34-35, 2012
  • Luminescence at 1.5 mu m from Si/GeSn nanodot/Si structures, Yoshiaki Nakamura,Norihito Fujinoki,Masakazu Ichikawa, JOURNAL OF PHYSICS D-APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 45, No. 3, 2012/01
  • X-ray microdiffraction study of three-dimensional distribution of local strain in thick AlN film grown on a trench-patterned AlN/a-Al2O3 template, D. T. Khan,S. Harada,J. Kikkawa,Y. Nakamura,H. Miyake,K. Hiramatsu,Y. Imai,S. Kimura,O. Sakata,A. Sakai, 15th International Conference on Thin Films, 2011/11
  • Formation of ultrahigh density iron oxide nanodots on Si substrates with nanometer-sized interfaces, K. Tanaka,Y. Nakamura,H. Harada,J. Kikkawa,A. Sakai, 7th Handai Nanoscience and Nanotechnology International Symposium, 2011/11
  • Growth of vanadium dioxides nanowires using vanadyl acetylacetonate, T. Ishibe,J. Kikkawa,Y. Nakamura,A. Sakai, 7th Handai Nanoscience and Nanotechnology International Symposium, 2011/11
  • Preface, Yoshihito Maeda,Yoshikazu Terai,Kevin P. Homewood,Kenichi Takarabe,Kenji Yamaguchi,Motofumi Suzuki,Taizoh Sadoh,Yoshiaki Nakamura, Thin Solid Films, Vol. 519, No. 24, 2011/10/03
  • Photoabsorption properties of beta-FeSi2 nanoislands grown on Si(111) and Si(001): Dependence on substrate orientation studied by nano-spectroscopic measurements, Nobuyasu Naruse,Yoshiaki Nakamura,Yutaka Mera,Masakazu Ichikawa,Koji Maeda, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 519, No. 24, p. 8477-8479, 2011/10
  • Fe3Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO2 film technique, Yoshiaki Nakamura,Kenjiro Fukuda,Shogo Amari,Masakazu Ichikawa, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 519, No. 24, p. 8512-8515, 2011/10
  • Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films, Masahiko Takahashi,Yoshiaki Nakamura,Jun Kikkawa,Osamu Nakatsuka,Shigeaki Zaima,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 50, No. 8, 2011/08
  • Development of Novel System Combining Scanning Tunneling Microscope-Based Cathodoluminescence and Electroluminescence Nanospectroscopies, Kentaro Watanabe,Yoshiaki Nakamura,Shigeyuki Kuboya,Ryuji Katayama,Kentaro Onabe,Masakazu Ichikawa, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, Vol. 50, No. 8, 2011/08
  • Epitaxial Growth of High Quality Ge Films on Si(001) Substrates by Nanocontact Epitaxy, Yoshiaki Nakamura,Akiyuki Murayama,Masakazu Ichikawa, CRYSTAL GROWTH & DESIGN, AMER CHEMICAL SOC, Vol. 11, No. 7, p. 3301-3305, 2011/07
  • Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds, Yoshiaki Nakamura,Takafumi Miwa,Masakazu Ichikawa, NANOTECHNOLOGY, IOP PUBLISHING LTD, Vol. 22, No. 26, 2011/07
  • Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition, Kazuya Isiizumi,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Junichi Yanagisawa, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, Vol. 50, No. 6, 2011/06
  • X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(001) substrates, Kouhei Ebihara,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Gang Wang,Matty Caymax,Yasuhiko Imai,Shigeru Kimura,Osami Sakata, SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 60, No. 1, p. 26-30, 2011/06
  • Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal-Oxide-Semiconductor Field-Effect Transistor, Yuji Iwasaki,Yoshiaki Nakamura,Jun Kikkawa,Motoki Sato,Eiji Toyoda,Hiromichi Isogai,Koji Izunome,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, Vol. 50, No. 4, 2011/04
  • Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates, Osamu Yoshitake,Jun Kikkawa,Yoshiaki Nakamura,Eiji Toyoda,Hiromichi Isogai,Koji Izunome,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, Vol. 50, No. 4, 2011/04
  • Self-organization of two-dimensional SiGe nanodot arrays using selective etching of pure-edge dislocation network, Yoshiaki Nakamura,Masahiko Takahashi,Tatsuki Fujiwara,Jun Kikkawa,Akira Sakai,Osamu Nakatsuka,Shigeaki Zaima, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 109, No. 4, 2011/02
  • Microscopic structure of directly bonded silicon substrates, Tetsuji Kato,Yuji Ohara,Takaya Ueda,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima,Eiji Toyoda,Hiromichi Isogai,Takeshi Senda,Kouji Izunome,Hiroo Tajiri,Osamu Sakata,Shigeru Kimura, Key Engineering Materials, Vol. 470, p. 164-170, 2011
  • Structural Change during the Formation of Directly Bonded Silicon Substrates, Tetsuji Kato,Takaya Ueda,Yuji Ohara,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Osamu Nakatsuka,Shigeaki Zaima,Eiji Toyoda,Kouji Izunome,Yasuhiko Imai,Shigeru Kimura,Osamu Sakata, TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, TRANS TECH PUBLICATIONS LTD, Vol. 470, p. 158-+, 2011
  • Structural change induced in carbon materials by electronic excitations, Koji Maeda,Shijin Liang,Yoshiaki Nakamura,Hiroaki Sato,Yutaka Mera, DAMAGE TO VUV, EUV, AND X-RAY OPTICS III, SPIE-INT SOC OPTICAL ENGINEERING, Vol. 8077, 2011
  • Formation and Magnetic Properties of Ultrahigh Density Fe3Si Nanodots Epitaxially Grown on Si(111) Substrates Covered with Ultrathin SiO2 Films, Yoshiaki Nakamura,Shogo Amari,Sung-Pyo Cho,Nobuo Tanaka,Masakazu Ichikawa, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, Vol. 50, No. 1, 2011/01
  • Self-organization and Self-repair of a Two-dimensional Nanoarray of Ge Quantum Dots Epitaxially Grown on Si Substrates using Ultrathin SiO2 Films, Yoshiaki NAKAMURA,Akiyuki MURAYAMA,Ryoko WATANABE,Tomokazu IYODA,Masakazu ICHIKAWA, Vol. 31, No. 12, p. 626-631, 2010/12
  • Two-dimensional nanoarray of SiGe epitaxial nanodots self-organized by selective etching of edge dislocation network, Y. Nakamura,M. Takahashi,J. Kikkawa,O. Nakatsuka,S. Zaima,A. Sakai, 2010 Material Research Society Fall Meeting, 2010/11
  • X-ray Microdiffraction Study on Crystallinity of Micron-Sized Ge Films Selectively Grown on Si(001) Substrates, K. Ebihara,S. Harada,J. Kikkawa,Y. Nakamura,A. Sakai,G. Wang,M. Caymax,Y. Imai,S. Kimura,O. Sakata, ECS Transactions, Vol. 33, No. 6, p. 887-892, 2010/10
  • Formation of ultrahigh density iron-based nanodots on Si (111) substrates using ultrathin SiO2 films, H. Hamanaka,Y. Nakamura,K. Tanaka,J. Kikkawa,A. Sakai, Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010), 2010/06
  • Four-point-probe pseudo-MOSFET analysis of wafer-bonded germanium-on-insulator substrates, Y. Iwasaki,Y. Nakamura,J. Kikkawa,A. Sakai,M. Sato,E. Toyoda,H. Isogai,K. Izunome, Intenational Symposium on Technology Evolution for Silicon Nano-Electronics, 2010/06
  • Transmission electron microscopy observation of Ge/SiO2 interfaces in wafer-bonded germanium-on-insulator substrates, O. Yoshitake,J. Kikkawa,Y. Nakamura,A. Sakai,E. Toyoda,H. Isogai,K. Izunome, Intenational Symposium on Technology Evolution for Silicon Nano-Electronics, 2010/06
  • Strain and domain texture of Ge films selectively grown in localized regions on Si(001) substrates, K. Ebihara,J. Kikkawa,Y. Nakamura,A. Sakai,G. Wang,M. Caymax,Y. Imai,S. Kimura,O. Sakata, The fifth International SiGe Technology and Device Meeting, 2010/05
  • Annealing Effects on Ge/SiO2 Interfaces in Wafer-Bonded GOI Substrates, O. Yoshitake,J. Kikkawa,Y. Nakamura,A. Sakai,E. Toyoda,H. Isogai,K. Izunome, International Conference on Core Research and Engineering Science of Advanced Materials (Global COE Program) & Third International Conference on Nanospintronics Design and Realization, 3rd-ICNDR, 2010/05
  • Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates, Yoshiaki Nakamura,Akiyuki Murayama,Ryoko Watanabe,Tomokazu Iyoda,Masakazu Ichikawa, NANOTECHNOLOGY, IOP PUBLISHING LTD, Vol. 21, No. 9, 2010/03
  • Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates (vol 21, 095305, 2010), Yoshiaki Nakamura,Akiyuki Murayama,Ryoko Watanabe,Tomokazu Iyoda,Masakazu Ichikawa, NANOTECHNOLOGY, IOP PUBLISHING LTD, Vol. 21, No. 10, 2010/03
  • Microscopic characterization of Si(011)/Si(001) direct silicon bonding substrates, T. Kato,T. Ueda,Y. Ohara,J. Kikkawa,Y. Nakamura,A. Sakai,O. Nakatsuka,S. Zaima,E. Toyoda,K. Izunome,Y. Imai,S. Kimura,O. Sakata, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2010/01
  • Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing, T. Kato,Y. Nakamura,J. Kikkawa,A. Sakai,E. Toyoda,K. Izunome,O. Nakatsuka,S. Zaima,Y. Imai,S. Kimura,O. Sakata, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 518, No. 6, p. S147-S150, 2010/01
  • Surface structural analysis of off-angled Si(110) substrates, M. Yamashita,Y. Nakamura,J. Kikkawa,A. Sakai,E. Toyoda,M. Sato,H. Isogai,K. Izunome, 5th Handai Nanoscience and Nanotechnology International Symposium, 2009/09
  • Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO2 film technique, Yoshiaki Nakamura,Norihiko Fujinoki,Masakazu Ichikawa, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 106, No. 1, 2009/07
  • Scanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure, Kentaro Watanabe,Yoshiaki Nakamura,Masakazu Ichikawa,Shigeyuki Kuboya,Ryuji Katayama,Kentaro Onabe, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, Vol. 27, No. 4, p. 1874-1880, 2009/07
  • Defect-related light emission in the 1.4-1.7 mu m range from Si layers at room temperature, A. A. Shklyaev,Y. Nakamura,F. N. Dultsev,M. Ichikawa, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 105, No. 6, 2009/03
  • Fourier-transform photoabsorption spectroscopy of quantum-confinement effects in individual GeSn nanodots, Nobuyasu Naruse,Yutaka Mera,Yoshiaki Nakamura,Masakazu Ichikawa,Koji Maeda, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 94, No. 9, 2009/03
  • High resolution transmission electron microscopy study of iron-silicide nanodot structures grown on faintly oxidized Si (111) surfaces, Sung-Pyo Cho,Yoshiaki Nakamura,Masakazu Ichikawa,Nobuo Tanaka, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 517, No. 9, p. 2865-2870, 2009/03
  • Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO2 film technique, Yoshiaki Nakamura,Tomohiro Sugimoto,Masakazu Ichikawa, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 105, No. 1, 2009/01
  • Formation technology of high density nanodots epitaxially grown on Si substrates, Yoshiaki Nakamura,Masakazu Ichikawa, Vol. 134 23, 2008/12
  • Characterization of semiconductor nanostructures formed by using ultrathin Si oxide technology, M. Ichikawa,S. Uchida,A. A. Shklyaev,Y. Nakamura,S. -P. Cho,N. Tanaka, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 255, No. 3, p. 669-671, 2008/11
  • Electric field modulation nanospectroscopy for characterization of individual beta-FeSi(2) nanodots, Nobuyasu Naruse,Yutaka Mera,Yoshiaki Nakamura,Masakazu Ichikawa,Koji Maeda, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 104, No. 7, 2008/10
  • Giant fullerenes formed on C(60) films irradiated with electrons field-emitted from scanning tunneling microscope tips, Yoshiaki Nakamura,Yutaka Mera,Koji Maeda, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 254, No. 23, p. 7881-7884, 2008/09
  • Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy, Kentaro Watanabe,Yoshiaki Nakamura,Masakazu Ichikawa, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 254, No. 23, p. 7737-7741, 2008/09
  • Self-assembled epitaxial growth of high density beta-FeSi2 nanodots on Si (001) and their spatially resolved optical absorption properties, Yoshiaki Nakamura,Shogo Amari,Nobuyasu Naruse,Yutaka Mera,Koji Maeda,Masakazu Ichikawa, CRYSTAL GROWTH & DESIGN, AMER CHEMICAL SOC, Vol. 8, No. 8, p. 3019-3023, 2008/08
  • Local optical characterization related to Si cluster concentration in GaAs using scanning tunneling microscope cathodoluminescence spectroscopy, Kentaro Watanabe,Yoshiaki Nakamura,Masakazu Ichikawa, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, Vol. 47, No. 7, p. 6109-6113, 2008/07
  • The enhanced signal of subgap centers in tip-probing photoabsorption spectroscopy with an assist of a subsidiary light, Nobuyasu Naruse,Yutaka Mera,Yoshiaki Nakamura,Masakazu Ichikawa,Koji Maeda, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 103, No. 4, 2008/02
  • Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy, Kentaro Watanabe,Yoshiaki Nakamura,Masakazu Ichikawa, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, Vol. 26, No. 1, p. 195-200, 2008/01
  • Epitaxial growth of ultrahigh density Ge(1-x)Sn(x) quantum dots on Si(111) substrates by codeposition of Ge and Sn on ultrathin SiO(2) films, Yoshiaki Nakamura,Akiko Masada,Sung-Pyo Cho,Nobuo Tanaka,Masakazu Ichikawa, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 102, No. 12, 2007/12
  • Fourier transform photoabsorption spectroscopy based on scanning tunneling microscopy, Nobuyasu Naruse,Yutaka Mera,Yo Fukuzawa,Yoshiaki Nakamura,Masakazu Ichikawa,Koji Maeda, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 102, No. 11, 2007/12
  • Quantum-size effect in uniform Ge-Sn alloy nanodots observed by photoemission Spectroscopy, Yasuo Nakayama,Keiko Takase,Toru Hirahara,Shuji Hasegawa,Taichi Okuda,Ayumi Harasawa,Iwao Matsuda,Yoshiaki Nakamura,Masakazu Ichikawa, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, INST PURE APPLIED PHYSICS, Vol. 46, No. 45-49, p. L1176-L1178, 2007/12
  • The origin of spectral distortion in electric field modulation spectroscopy based on scanning tunneling microscopy, N. Naruse,Y. Mera,Y. Nakamura,M. Ichikawa,K. Maeda, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 601, No. 22, p. 5300-5303, 2007/11
  • Polymerization and depolymerization of fullerenes induced by hole injection from scanning tunneling microscope tips, Y. Mera,M. Yoshino,Y. Nakamura,K. Saishu,K. Maeda, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 601, No. 22, p. 5207-5211, 2007/11
  • Quantum-confinement effect in individual Ge1-xSnx quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy, Yoshiaki Nakamura,Akiko Masada,Masakazu Ichikawa, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 91, No. 1, 2007/07
  • Desorption of chlorine atoms on Si(111)-(7x7) surfaces induced by hole injection from scanning tunneling microscope tips, Yoshiaki Nakamura,Yutaka Mera,Koji Maeda, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 601, No. 10, p. 2189-2193, 2007/05
  • Influence of growth and annealing conditions on photoluminescence of Ge/Si layers grown on oxidized Si surfaces, A. A. Shklyaev,S-P Cho,Y. Nakamura,N. Tanaka,M. Ichikawa, JOURNAL OF PHYSICS-CONDENSED MATTER, IOP PUBLISHING LTD, Vol. 19, No. 13, 2007/04
  • Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer, Yoshiaki Nakamura,Masakazu Ichikawa,Kentaro Watanabe,Yasuhiro Hatsugai, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 90, No. 15, 2007/04
  • Photoluminescence of Si layers grown on oxidized Si surfaces, A. A. Shklyaev,Y. Nakamura,M. Ichikawa, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 101, No. 3, 2007/02
  • Observation of the quantum-confinement effect in individual beta-FeSi2 nanoislands epitaxially grown on Si(111) surfaces using scanning tunneling spectroscopy, Yoshiaki Nakamura,Ryota Suzuki,Masafumi Umeno,Sung-Pyo Cho,Nobuo Tanaka,Masakazu Ichikawa, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 89, No. 12, 2006/09
  • Manipulating Ge quantum dots on ultrathin SixGe1-x oxide films using scanning tunneling microscope tips, Yoshiaki Nakamura,Hiroyuki Takata,Akiko Masada,Masakazu Ichikawa, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 600, No. 17, p. 3456-3460, 2006/09
  • Formation of ultrahigh density and ultrasmall coherent beta-FeSi2 nanodots on Si (111) substrates using Si and Fe codeposition method, Yoshiaki Nakamura,Yasushi Nagadomi,Sung-Pyo Cho,Nobuo Tanaka,Masakazu Ichikawa, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 100, No. 4, 2006/08
  • Photoluminescence of Ge/Si structures grown on oxidized Si surfaces, AA Shklyaev,S Nobuki,S Uchida,Y Nakamura,M Ichikawa, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 88, No. 12, 2006/03
  • Quantum confinement observed in Ge nanodots on an oxidized Si surface, A Konchenko,Y Nakayama,Matsuda, I,S Hasegawa,Y Nakamura,M Ichikawa, PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, Vol. 73, No. 11, 2006/03
  • STM observations of photo-induced jumps of chlorine atoms chemisorbed on Si(111)-(7 x 7) surface, A Yajima,Y Nakamura,Y Mera,K Maeda, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 593, No. 1-3, p. 155-160, 2005/11
  • Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy, Y Nakamura,K Watanabe,Y Fukuzawa,M Ichikawa, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 87, No. 13, 2005/09
  • Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces, Yoshiaki Nakamura,Yasushi Nagadomi,Sung-Pyo Cho,Nobuo Tanaka,Masakazu Ichikawa, Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 7, 2005/08/15
  • Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces, Y Nakamura,Y Nagadomi,SP Cho,N Tanaka,M Ichikawa, PHYSICAL REVIEW B, AMER PHYSICAL SOC, Vol. 72, No. 7, 2005/08
  • Role of intermolecular separation in nanoscale patterning C-60 films by local injection of electrons from scanning tunneling microscope tip, Y Nakamura,Y Mera,K Maeda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, JAPAN SOC APPLIED PHYSICS, Vol. 44, No. 42-45, p. L1373-L1376, 2005
  • Nonthermal decomposition of C-60 polymers induced by tunneling electron injection, Y Nakamura,F Kagawa,K Kasai,Y Mera,K Maeda, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 85, No. 22, p. 5242-5244, 2004/11
  • Formation of ultrahigh density Ge nanodots on oxidized Ge/Si(111) surfaces, Y Nakamura,Y Nagadomi,K Sugie,N Miyata,M Ichikawa, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 95, No. 9, p. 5014-5018, 2004/05
  • Hopping motion of chlorine atoms on Si(100)-(2 x 1) surfaces induced by carrier injection from scanning tunneling microscope tips, Y Nakamura,Y Mera,K Maeda, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 531, No. 1, p. 68-76, 2003/05
  • Cluster reactions in C-60 films induced by electron injection from a scanning tunneling microscope tip, Y Nakamura,F Kagawa,K Kasai,Y Mera,K Maeda, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 528, No. 1-3, p. 151-155, 2003/03
  • Spreading effects in surface reactions induced by tunneling current injection from an STM tip, K Maeda,Y Nakamura, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 528, No. 1-3, p. 110-114, 2003/03
  • Nanoscale imaging of electronic surface transport probed by atom movements induced by scanning tunneling microscope current, Y Nakamura,Y Mera,K Maeda, PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, Vol. 89, No. 26, 2002/12
  • Structural change of radiation defects in graphite crystals induced by STM probing, O Tonomura,Y Mera,A Hida,Y Nakamura,T Meguro,K Maeda, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, SPRINGER-VERLAG, Vol. 74, No. 2, p. 311-316, 2002/02
  • Spatially extended polymerization of C60 clusters induced by localized current injection from scanning tunneling microscope tips, Yoshiaki Nakamura,Yutaka Mera,Koji Maeda, Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, Vol. 386, No. 1, p. 135-138, 2002
  • Spatially extended polymerization of C-60 clusters induced by localized current injection from scanning tunneling microscope tips, Y Nakamura,Y Mera,K Maeda, MOLECULAR CRYSTALS AND LIQUID CRYSTALS, TAYLOR & FRANCIS LTD, Vol. 386, p. 135-138, 2002
  • Chlorine atom diffusion on Si(111)-(7 x 7) surface enhanced by hole injection from scanning tunneling microscope tips, Y Nakamura,Y Mera,K Maeda, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 497, No. 1-3, p. 166-170, 2002/01
  • Diffusion of chlorine atoms on Si(111)-(7x7) surface enhanced by electron injection from scanning tunneling microscope tips, Y Nakamura,Y Mera,K Maeda, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 487, No. 1-3, p. 127-134, 2001/07
  • In situ scanning tunneling microscopic study of polymerization of C-60 clusters induced by electron injection from the probe tips, Y Nakamura,Y Mera,K Maeda, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 77, No. 18, p. 2834-2836, 2000/10
  • A reproducible method to fabricate atomically sharp tips for scanning tunneling microscopy, Y Nakamura,Y Mera,K Maeda, REVIEW OF SCIENTIFIC INSTRUMENTS, AMER INST PHYSICS, Vol. 70, No. 8, p. 3373-3376, 1999/08
  • Laser-induced Etching of Chlorinated Silicon Surfaces, Koji Maeda,Hirotaka Amasuga,Yoshiaki Nakamura,Yutaka Mera, Vol. 20, No. 6, p. 393-400, 1999/06

Misc.

  • SiGeナノ構造バルクにおける熱分布を利用した熱電出力因子の増大, 坂根駿也,石部貴史,藤田武志,池内賢朗,鎌倉良成,森伸也,中村芳明, 応用物理学会春季学術講演会講演予稿集(CD-ROM), Vol. 66th, 2019/02/25
  • Si基板上に形成した擬ギャップε‐CoSi薄膜の熱電性能評価, 雛川貴弘,坂根駿也,石部貴史,藤田武志,藤田武志,中村芳明,中村芳明, 応用物理学会春季学術講演会講演予稿集(CD-ROM), Vol. 66th, 2019/02/25
  • Au添加SiGeバルク熱電材料の構造とその高出力因子, 坂根駿也,柏野真人,渡辺健太郎,鎌倉良成,鎌倉良成,森伸也,森伸也,藤田武志,藤田武志,中村芳明,中村芳明, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), Vol. 79th, 2018/09/05
  • 組成制御によるSiGe/Si超格子の出力因子増大, 谷口達彦,奥畑亮,渡辺健太郎,渡辺健太郎,ALAM Md. Mahfuz,澤野憲太郎,藤田武志,藤田武志,中村芳明,中村芳明, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), Vol. 78th, 2017/08/25
  • ナノドット含有Si薄膜の熱電特性に与える熱処理の影響, 坂根駿也,渡辺健太郎,渡辺健太郎,藤田武志,藤田武志,ALAM Md. Mahfuz,澤野憲太郎,中村芳明,中村芳明, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), Vol. 78th, 2017/08/25
  • ナノドット含有Si薄膜における構造と出力因子の関係, 坂根駿也,渡辺健太郎,渡辺健太郎,藤田武志,澤野憲太郎,中村芳明,中村芳明, 応用物理学会春季学術講演会講演予稿集(CD-ROM), Vol. 64th, 2017/03/01
  • 鉄シリサイドナノドット構造制御によるSi薄膜の熱電物性向上, 坂根駿也,渡辺健太郎,渡辺健太郎,藤田武志,澤野憲太郎,中村芳明,中村芳明, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), Vol. 77th, 2016/09/01
  • Si(111)基板上エピタキシャルβ‐FeSi<sub>2</sub>薄膜の熱電特性, 谷口達彦,坂根駿也,青木俊輔,奥畑亮,渡辺健太郎,渡辺健太郎,鈴木健之,藤田武志,藤田武志,澤野憲太郎,中村芳明,中村芳明, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), Vol. 77th, 2016/09/01
  • ZnOナノワイヤ埋め込み構造の形成とその熱電特性, 石部貴史,渡辺健太郎,渡辺健太郎,吉川純,藤田武志,藤田武志,中村芳明,中村芳明, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), Vol. 77th, 2016/09/01
  • Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template (vol 381, pg 37, 2013), D. T. Khan,S. Takeuchi,J. Kikkawa,Y. Nakamura,H. Miyake,K. Hiramatsu,Y. Imai,S. Kimura,O. Sakata,A. Sakai, JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, Vol. 388, p. 150-150, 2014/02
  • Self-organization and Self-repair of a Two-dimensional Nanoarray of Ge Quantum Dots Epitaxially Grown on Si Substrates using Ultrathin SiO2 Films, Vol. 31 626, 2010
  • Fourier transform photo-absorption spectroscopy by detecting scanning tunneling microscope current, N. Naruse,Y. Mera,Y. Nakamura,M. Ichikawa,K. Maeda, The 14th International Colloquium on Scanning Probe Microscopy, 2006
  • 極薄GeO<sub>x</sub>膜上の超高密度Geナノドットの作成, 中村芳明,長冨靖,杉江薫,宮田典幸,市川昌和, 応用物理学会学術講演会講演予稿集, Vol. 64th, No. 2, 2003/08/30
  • Laser-induced Etching of Chlorinated Silicon Surfaces, Vol. 20, 6, 393-400., 1999

Publications

  • サーマルデバイス 新素材・新技術による熱の高度制御と高効率利用, NTS, ISBN:4860436024, 2019/04
  • フォノンエンジニアリング~マイクロ・ナノスケールの次世代熱制御技術~, (株)エヌ・ティー・エス, ISBN:9784860435097, 2017/09
  • Nanostructuers of Silicide-based semiconductors (Chapter 3.7), Yoshiaki nakamura, Shokabo, ISBN:9784785329204, 2014/09
  • Nanostructuers of Silicide-based semiconductors (Chapter 3.7), Yoshiaki nakamura, Shokabo, ISBN:9784785329204, 2014/09
  • Formation of Ultrahigh Density Quantum Dots Epitaxially Grown on Si Substrates Using Ultrathin SiO2 Film Technique, STATE-OF-THE-ART OF QUANTUM DOT SYSTEM FABRICATIONS, CAPTER 6, jointly worked, INTECH, ISBN:9789535106494, 2012/06

Awards

  • Encouraging prize at the Japanese scociety of applied physics meeting, 2006
  • 第20回応用物理学会講演奨励賞, 2006
  • Graduate Student Award at the DIET9 Confereaces, 2002
  • Graduate Student Award at the DIET9 Confereaces, 2002

Presentations

  • Nanoarchitecture design for independent control of carrier and phonon transports, Yoshiaki Nakamura, 2016/12
  • Nanostructure driven defect control in GaN grown by the Na flux method, 2016/06
  • Epitaxial growth of iron oxide nanodots on Si substrate using Fe-coated Ge nuclei, 2015/12
  • Observation of covering epitaxial β-FeSi2 nanodots with Si for fabricating Si/β-FeSi2 nanodots stacked structures, 2015/12
  • Thermal conductivity reduction in the Si nanoarchitecture including epitaxial nanodots, Yoshiaki Nakamura, 2015/10
  • 窒化物半導体の成長表面・界面制御と転位挙動―Naフラックス成長GaN結晶を中心にー, 2015/09
  • β-FeSi2ナノドット積層構造における熱電特性の支配要因, 2015/09
  • エピタキシャルGeナノドット含有Si薄膜における熱電特性制御, 2015/09
  • エピタキシャルFe3O4-δナノドット/Si基板における抵抗スイッチング特性の成長温度依存症, 2015/09
  • Si基板上高密度エピタキシャル鉄酸化物ナノドットの形成とスイッチング特性, 2015/09
  • Phonon scattering control by structure of epitaxial Ge nanodots in Si, 2015/07
  • Thermal conductivity reduction and carrier doping in the Si nanoarchitecture including epitaxial nanodots, 2015/07
  • Si中 エピタキシャルGeナノドットを用いた熱抵抗制御, 2015/03
  • 極薄AI2O3/SiO2 BOX層を有する張り合わせGeOI基板の熱処理による電気特性改善, 2015/03
  • 鉄シリサイド核/Siを用いた鉄酸化物のエピタキシャル成長, 2015/03
  • Naフラックス結合成長法で作製したGaNバルク結晶における成長初期界面の欠陥構造解析, 2015/03
  • Microstructure Analysis of a Thick AIN Film Grown on a Trench-Patterned AIN/Sapphire Template by X-Ray Microdiffraction, 2014/11
  • 周期溝加工基板上半極性面(20-21)GaN膜の微視的結晶構造解析~X線マイクロ回折と透過型電子顕微鏡を用いた相補的評価~, 2014/11
  • 表層固溶窒素濃度が制御されたSiウェーハのデバイス活性領域における転位挙動, 2014/11
  • (Invited) Epitaxial Growth of Nanodots on Si Substrates with Controlled Interfaces and Their Application to Electronics and Thermoelectronics, Yoshiaki Nakamura,Akira Sakai, 2014/10
  • Effect of surface-nitrogen-concentration on dislocation behavior in Si wafers treated by high temperature rapid thermal nitridation, 2014/10
  • Siウェーハの曲げ強度に対する表層窒素濃度の影響, 2014/09
  • Si基板上エピタキシャルFe2O3ナノドットの抵抗変化特性とそのアニール処理依存性, 2014/09
  • 窒化物半導体結晶特異構造の構造解析評価ーマルチスケール評価へのアプローチー, 2014/09
  • エピタキシャル鉄シリサイドナノドット積層構造の熱電特性, 2014/09
  • X線回折法による半極性(20-21)GaN膜の膜厚・成長条件依存性評価, 2014/09
  • 周期溝加工(22-43)サファイヤ基板上半極性面(20-21)GaNの微視的結晶構造解析, 2014/09
  • Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films on (22-43) patterned sapphire substrate, 2014/08
  • Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction, 2014/08
  • Behaviors of dislocations in GaN crystals grown on point seeds in the Na-Flux coalescence growth, 2014/08
  • Thermal and electrical properties of Si films including epitaxial Ge nanodot phonon-scatterers, 2014/07
  • Improvement of current drive of Ge-nMISFETs by epitaxially grown n+-Ge:P source and drain, 2014/06
  • Ge-nMOSFET向けn+-Ge/n+-SiGe積層ストレッサーによるGeチャネルへのひずみ導入および寄生抵抗の低減, 2014/03
  • AI2O3挿入層を有する貼り合わせGeOI基板の電気特性評価, 2014/03
  • Crystal domain microstructure analysis of a thick AIN film grown on a trench-patterned AIN/sapphire template by X-ray microdiffraction, 2014/03
  • 極薄Si酸化膜技術を用いてエピタキシャル成長したSi基板上Fe3O4ナノドットの抵抗スイッチング特性, 2014/03
  • エピタキシャルGeナノドットを有するSi熱電薄膜の電気特性評価, 2014/03
  • (Invited) Anomalous reduction of thermal conductivity of stacked epitaxial Si nanodots structures, Yoshiaki Nakamura,Akira Sakai, 2014/02
  • Anomalous reduction of thermal conductivity of stacked epitaxial Si nanodot structures, 2014/02
  • Introduction of Ultrahigh Density Ge Nanodots into Si Films for Si Based Thermoelectric Materials, 2014/02
  • エピタキシャル成長n+-Ge:Pの活性化率向上とTi電極との接触抵抗低減, 2013/09
  • Si中エピタキシャルGeナノドット散乱体の熱伝導率低減効果, 2013/09
  • Microscopic structure analysis of a thick AIN film grown on a trench-patterned AIN/sapphire template by X-ray microdiffraction, 2013/09
  • Variation of local residual strain and twist angle in growth direction of AIN films on trench-patterned 6H-SiC substrates, 2013/09
  • 薄膜AI2O3/SiO2 BOX層を有するUTB-GeOI基板作製, 2013/09
  • Anisotropic crystalline morphology of epitaxial thick AIN films grown on triangular-striped AIN/sapphire template, 2013/08
  • Epitaxial growth of stacked β-FeSi2 nanodots on Si substrates and their thermoelectric properties, 2013/07
  • Introduction of Ge nanodots in Si films as phonon scatterers and the thermal conductivity reduction, 2013/07
  • Dislocation behavior of surface-oxygen-concentration controlled Si wafers, 2013/06
  • Si基板上への鉄酸化物ナノドットのエピタキシャル成長とその電子状態測定, 2013/06
  • Reduction of contact resistance on selectively grown phosphorus-doped n+-Ge layers, 2013/06
  • 表層酸素濃度が制御されたSiウェーハのデバイス活性領域における転位挙動, 2013/03
  • エピタキシャルb-FeSi2ナノドット積層構造の形成とその熱電物性, 2013/03
  • Si基板上への鉄酸化物ナノドットのエピタキシャル成長とその電子状態測定, 2013/03
  • X線マイクロ回折による周期溝加工SiC基板上に成長したAIN薄膜の結晶性評価, 2013/03
  • エピタキシャルGeナノドットを有するSi熱電薄膜の電気特性評価, 2013/03
  • (Invited) Si-based epitaxial nanodots for thermoelectric material, Yoshiaki Nakamura, 2013/03
  • Distribution of Local Strain in Facet Controlled ELO (FACELO) GaN by X-ray Micro Diffraction, 2012/12
  • Cross-sectional X-ray Microdiffraction Study of Residual Strain Distribution in a Thick AlN Film Grown on a Trench-patterned AlN/α-Al2O3 Template, 2012/12
  • Epitaxial Growth of Iron-Silicide Nanodots on Si Substrates Using Ultrathin SiO2 Film Technique and Their Physical Properties, Y. Nakamura,M Ichikawa, 2012/10
  • GOI substrates -Fabrication and characterization-, A. Sakai,S. Yamasaka,J. Kikkawa,Y. Nakamura,Y. Moriyama,T. Tezuka,S. Takeuchi,K. Izunome, The 2012 Si, SiGe, and Related Compound: Materials, Processing, and Devices Symposium, the PRiME 2012 Joint International 222nd Elecrochemical Society Meeting, 2012/10
  • Local strain distribution in a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template measured by X-ray microdiffraction, 2012/10
  • Resistive Switching Properties of Directly Bonded SrTiO3 Substrate, 2012/06
  • (Invited) Nanocontact epitaxy of thin films on Si substrates using nanodot seeds fabricated by ultrathin SiO2 film technique, Yoshiaki Nakamura,Masakazu Ichikawa, Electrochemical Society 221th meeting in Seattle USA, 2012/05
  • Formation mechanism of peculiar structures on vicinal Si(110) surfaces, M. Yamashita,Y. Nakamura,R. Sugimoto,J. Kikkawa,K. Izunome,A. Sakai, 11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 11), St. Petersburg, Russia, Oct. 2011, 2011/10
  • Structural analysis of vicinal Si(110) surfaces with various off-angles, M. Yamashita,Y. Nakamura,A. Yamamoto,J. Kikkawa,K. Izunome,A. Sakai, 11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 11), St. Petersburg, Russia, Oct. 2011, 2011/10
  • Formation of iron oxide nanodot structures on Si substrates by controlling nanometer-sized interface using ultrathin SiO2 film technique, Yoshiaki Nakamura,Hironobu Hamanaka,Kazuki Tanaka,Jun Kikkawa,Akira Sakai, 11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN 11), St. Petersburg, Russia, Oct. 2011, 2011/10
  • (Invited) Self-organization and self-repair of two-dimensional periodic nanoarray of epitaxial Ge nanodots using ultrathin SiO2 film technique, Yoshiaki Nakamura, 2011/10
  • (Invited) High density Iron silicde nanodots formed by ultrathin SiO2 film technique, Yoshiaki Nakamura, IUMRS-ICA 2011, Taipei, September, 2011, 2011/09
  • (Invited) Nanocontact heteroepitaxy of high-quality thin III-V films on Si substrates using nanodot seeds, Yoshiaki Nakamura,Masakazu Ichikawa, International Symposium on Integrated Molecular/Materials Engineering (ISIMME 2011), 2011/06
  • Two-dimensional nanoarray of SiGe epitaxial nanodots self-organized by selective etching of edge dislocation network, Yoshiaki Nakamura,Masahiko Takahashi,Jun Kikkawa,Osamu Nakatsuka,Shigeaki Zaima,Akira Sakai, Material Reserch Society Fall meeting, Boston, USA, Dec. 2010, 2010/12
  • X-ray Microdiffraction Study on Crystallinity of Micron-Sized Ge Films Selectively Grown on Si(001) Substrates, K. Ebihara,S. Harada,J. Kikkawa,Y. Nakamura,A. Sakai,G. Wang,M. Caymax,Y. Imai,S. Kimura,O. Sakata, ECS Transactions, 2010/10
  • (Invited) Self-organization and self-repair of a two-dimensional nanoarray of epitaxial Ge quantum dots using ultrathin SiO2 film technique, Yoshiaki Nakamura,Akiyuki Murayama,Ryoko Watanabe,Tomokazu Iyoda,Masakazu, Ichikawa, The 5th International Symposium on Integrated Molecular/Materials Engineering (ISIMME 2010), Changzhou, China, Sep. 2010, 2010/09
  • (Invited) Self-assembly technique of ultrahigh density quantum dots of group IV semiconductor epitaxially grown on Si substrates using ultrathin SiO2 films, Yoshiaki Nakamura, The 4th International Symposium on Integrated Molecular/Materials Engineering (ISIMME 2009), Chengdu, China, Oct. 2009, 2009/10
  • Fourier transform photoabsorption spectroscopy based on scanning tunneling microscopy, Nobuyasu Naruse,Yutaka Mera,Yo Fukuzawa,Yoshiaki Nakamura,Masakazu Ichikawa,Koji Maeda, Journal of Appled Physics, 2007
  • Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer, Yoshiaki Nakamura,Masakazu Ichikawa,Kentaro Watanabe,Yasuhiro Hatsugai, Appled Physics Letters, 2007