顔写真

PHOTO

Karahashi Kazuhiro
唐橋　一浩
Karahashi Kazuhiro
唐橋　一浩
Institutional repository
R3 Institute for Newly-Emerging Science Design, Specially Appointed Professor (Full Time)
Institutional repository

Papers 54

  1. Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces

    K Ishikawa, K Karahashi, H Tsuboi, K Yanai, M Nakamura

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 21　No. 4　p. L1-L3　2003/07　Research paper (scientific journal)

  2. High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms

    Akiko Hirata, Masanaga Fukasawa, Jomar Unico Tercero, Katsuhisa Kugimiya, Yoshiya Hagimoto, Kazuhiro Karahashi, Satoshi Hamaguchi, Hayato Iwamoto

    Japanese Journal of Applied Physics　2023/07/01　Research paper (scientific journal)

  3. Foundations of atomic-level plasma processing in nanoelectronics

    Karsten Arts, Satoshi Hamaguchi, Tomoko Ito, Kazuhiro Karahashi, Harm C M Knoops, Adriaan J M Mackus, Wilhelmus M M (Erwin) Kessels

    Plasma Sources Science and Technology　Vol. 31　No. 10　p. 103002-103002　2022/10/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  4. Structural and electrical characteristics of ion-induced Si damage during atomic layer etching

    Akiko Hirata, Masanaga Fukasawa, Katsuhisa Kugimiya, Kazuhiro Karahashi, Satoshi Hamaguchi, Yoshiya Hagimoto, Hayato Iwamoto

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 61　No. SI　2022/07　Research paper (scientific journal)

  5. Low-energy ion irradiation effects on chlorine desorption in plasma-enhanced atomic layer deposition (PEALD) for silicon nitride

    Tomoko Ito, Hidekazu Kita, Kazuhiro Karahashi, Satoshi Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 61　No. SI　2022/07　Research paper (scientific journal)

  6. Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle

    Akiko Hirata, Masanaga Fukasawa, Jomar U. Tercero, Katsuhisa Kugimiya, Yoshiya Hagimoto, Kazuhiro Karahashi, Satoshi Hamaguchi, Hayato Iwamoto

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 61　No. 6　2022/06　Research paper (scientific journal)

  7. Experimental and theoretical approaches for the study of etching surface reactions

    唐橋一浩, 伊藤智子, 浜口智志

    応用物理　Vol. 91　No. 3　2022

  8. Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)(2) on a nickel oxide surface in atomic layer etching processes (vol 38, 052602, 2020)

    Abdulrahman H. Basher, Marjan Krstic, Karin Fink, Tomoko Ito, Kazuhiro Karahashi, Wolfgang Wenzel, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 39　No. 5　2021/09

  9. Molecular dynamics simulation for reactive ion etching of Si and SiO2 by SF 5 + ions

    Erin Joy Capdos Tinacba, Tomoko Ito, Kazuhiro Karahashi, Michiro Isobe, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B　Vol. 39　No. 4　2021/07　Research paper (scientific journal)

  10. 4. Characteristics of Atomic Layer Etching Reactions for Hard to Etch Metal Materials

    伊藤智子, 唐橋一浩, 浜口智志

    プラズマ・核融合学会誌　Vol. 97　No. 9　2021

  11. Mechanism of SiN etching rate fluctuation in atomic layer etching

    Akiko Hirata, Masanaga Fukasawa, Katsuhisa Kugimiya, Kojiro Nagaoka, Kazuhiro Karahashi, Satoshi Hamaguchi, Hayato Iwamoto

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 38　No. 6　2020/12　Research paper (scientific journal)

  12. Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)(2) on a nickel oxide surface in atomic layer etching processes

    Abdulrahman H. Basher, Marjan Krstic, Karin Fink, Tomoko Ito, Kazuhiro Karahashi, Wolfgang Wenzel, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 38　No. 5　2020/09　Research paper (scientific journal)

  13. On-wafer monitoring and control of ion energy distribution for damage minimization in atomic layer etching processes

    A. Hirata, M. Fukasawa, K. Kugimiya, K. Nagaoka, K. Karahashi, S. Hamaguchi, H. Iwamoto

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 59　2020/06　Research paper (scientific journal)

  14. Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes

    Hu Li, Tomoko Ito, Kazuhiro Karahashi, Munehito Kagaya, Tsuyoshi Moriya, Masaaki Matsukuma, Satoshi Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 59　2020/06　Research paper (scientific journal)

  15. Stability of hexafluoroacetylacetone molecules on metallic and oxidized nickel surfaces in atomic-layer-etching processes

    Abdulrahman H. Basher, Marjan Krstic, Takae Takeuchi, Michiro Isobe, Tomoko Ito, Masato Kiuchi, Kazuhiro Karahashi, Wolfgang Wenzel, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 38　No. 2　2020/03　Research paper (scientific journal)

  16. Surface Reactions of Plasma assisted Atomic Layer Etching for Silicon

    唐橋一浩, 浜口智志

    表面と真空　Vol. 63　No. 12　2020

  17. Molecular dynamics simulation of Si and SiO2 reactive ion etching by fluorine-rich ion species

    Erin Joy Capdos Tinacba, Michiro Isobe, Kazuhiro Karahashi, Satoshi Hamaguchi

    SURFACE & COATINGS TECHNOLOGY　Vol. 380　2019/12　Research paper (scientific journal)

  18. Damage recovery and low-damage etching of ITO in H-2/CO plasma: Effects of hydrogen or oxygen

    Akiko Hirata, Masanaga Fukasawa, Katsuhisa Kugimiya, Kazuhiro Karahashi, Satoshi Hamaguchi, Kojiro Nagaoka

    PLASMA PROCESSES AND POLYMERS　Vol. 16　No. 9　2019/09　Research paper (scientific journal)

  19. Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

    Akiko Hirata, Masanaga Fukasawa, Kazunori Nagahata, Hu Li, Kazuhiro Karahashi, Satoshi Hamaguchi, Tetsuya Tatsumi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 57　No. 6　2018/06　Research paper (scientific journal)

  20. Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?

    Kenji Ishikawa, Kazuhiro Karahashi, Tatsuo Ishijima, Sung Il Cho, Simon Elliott, Dennis Hausmann, Dan Mocuta, Aaron Wilson, Keizo Kinoshita

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 57　No. 6　2018/06

  21. Enhanced etching of tin-doped indium oxide due to surface modification by hydrogen ion injection

    Hu Li, Kazuhiro Karahashi, Pascal Friederich, Karin Fink, Masanaga Fukasawa, Akiko Hirata, Kazunori Nagahata, Tetsuya Tatsumi, Wolfgang Wenzei, Satoshi Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 57　No. 6　2018/06　Research paper (scientific journal)

  22. SiO2 and Si etching reactions by CxFy + ion bombardment

    Karahashi Kazuhiro, Li Hu, Ito Tomoko, Hamaguchi Satoshi

    JSAP Annual Meetings Extended Abstracts　Vol. 2018.1　p. 1853-1853　2018/03

    Publisher: The Japan Society of Applied Physics

  23. Etching reactions of fluorinated layers on metal surfaces exposed to XeF2

    Karahashi Kazuhiro, Ito Tomoko, Hamaguchi Satoshi

    JSAP Annual Meetings Extended Abstracts　Vol. 2017.2　p. 1752-1752　2017/09

    Publisher: The Japan Society of Applied Physics

  24. Effects of hydrogen ion irradiation on zinc oxide etching

    Hu Li, Kazuhiro Karahashi, Pascal Friederich, Karin Fink, Masanaga Fukasawa, Akiko Hirata, Kazunori Nagahata, Tetsuya Tatsumi, Wolfgang Wenzel, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 35　No. 5　2017/09　Research paper (scientific journal)

  25. Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H-2/Ar plasma

    Akiko Hirata, Masanaga Fukasawa, Takushi Shigetoshi, Masaki Okamoto, Kazunori Nagahata, Hu Li, Kazuhiro Karahashi, Satoshi Hamaguchi, Tetsuya Tatsumi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 56　No. 6　2017/06　Research paper (scientific journal)

  26. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

    Kenji Ishikawa, Kazuhiro Karahashi, Takanori Ichiki, Jane P. Chang, Steven M. George, W. M. M. Kessels, Hae June Lee, Stefan Tinck, Jung Hwan Um, Keizo Kinoshita

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 56　No. 6　2017/06

  27. Etching yields and surface reactions of amorphous carbon by fluorocarbon ion irradiation

    Kazuhiro Karahashi, Hu Li, Kentaro Yamada, Tomoko Ito, Satoshi Numazawa, Ken Machida, Kiyoshi Ishikawa, Satoshi Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 56　No. 6　2017/06　Research paper (scientific journal)

  28. Mass-selected ion beam study on etching characteristics of ZnO by methane-based plasma

    Hu Li, Kazuhiro Karahashi, Masanaga Fukasawa, Kazunori Nagahata, Tetsuya Tatsumi, Satoshi Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 55　No. 2　2016/02　Research paper (scientific journal)

  29. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Hu Li, Kazuhiro Karahashi, Masanaga Fukasawa, Kazunori Nagahata, Tetsuya Tatsumi, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 33　No. 6　2015/11　Research paper (scientific journal)

  30. Numerical Simulation of Atomic Layer Oxidation of Silicon by Oxygen Gas Cluster Beams

    MIZOTANI Kohei, ISOBE Michiro, KARAHASHI Kazuhiro, HAMAGUCHI Satoshi

    Plasma and Fusion Research　Vol. 10　p. 1406079-1406079　2015/09　Research paper (scientific journal)

    Publisher: The Japan Society of Plasma Science and Nuclear Fusion Research

  31. Correlation between dry etching resistance of Ta masks and the oxidation states of the surface oxide layers

    Makoto Satake, Masaki Yamada, Hu Li, Kazuhiro Karahashi, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B　Vol. 33　No. 5　2015/09　Research paper (scientific journal)

  32. Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

    Hu Li, Yu Muraki, Kazuhiro Karahashi, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 33　No. 4　2015/07　Research paper (scientific journal)

  33. Ion beam experiments for the study of plasma-surface interactions

    Kazuhiro Karahashi, Satoshi Hamaguchi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS　Vol. 47　No. 22　2014/06　Research paper (scientific journal)

  34. Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas

    Keita Miyake, Tomoko Ito, Michiro Isobe, Kazuhiro Karahashi, Masanaga Fukasawa, Kazunori Nagahata, Tetsuya Tatsumi, Satoshi Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 53　No. 3　2014/03　Research paper (scientific journal)

  35. Characteristics of silicon etching by silicon chloride ions

    Tomoko Ito, Kazuhiro Karahashi, Song-Yun Kang, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 31　No. 3　2013/05　Research paper (scientific journal)

  36. Si Damage Due to Oblique-Angle Ion Impact Relevant for Vertical Gate Etching Processes

    Tomoko Ito, Kazuhiro Karahashi, Kohei Mizotani, Michiro Isobe, Song-Yun Kang, Masanobu Honda, Satoshi Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 51　No. 8　2012/08　Research paper (scientific journal)

  37. Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CH2F+, and CH2F+ ions

    Tomoko Ito, Kazuhiro Karahashi, Masanaga Fukasawa, Tetsuya Tatsumi, Satoshi Hamaguchi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 29　No. 5　2011/09　Research paper (scientific journal)

  38. Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion

    Tomoko Ito, Kazuhiro Karahashi, Masanaga Fukasawa, Tetsuya Tatsumi, Satoshi Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 50　No. 8　2011/08　Research paper (scientific journal)

  39. Evaluation of Si etching yields by Cl+, Br+, and HBr+ ion irradiation

    Tomoko Ito, Kazuhiro Karahashi, Song-Yun Kang, Satoshi Hamaguchi

    FOURTH INTERNATIONAL SYMPOSIUM ON ATOMIC TECHNOLOGY　Vol. 232　2010　Research paper (international conference proceedings)

  40. Study of the Etching Reactions on SiO2 Caused by CFx+ (x=1, 2, 3) Ion Irradiation

    唐橋一浩

    表面科学　Vol. 28　No. 2　2007

  41. Measurement of desorbed products during organic polymer thin film etching by plasma beam irradiation

    Kazuaki Kurihara, Kazuhiro Karahashi, Akihiro Egami, Moritaka Nakamura

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 24　No. 6　p. 2217-2222　2006/11　Research paper (scientific journal)

  42. Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C : F film deposition

    K Yanai, K Karahashi, K Ishikawa, M Nakamura

    JOURNAL OF APPLIED PHYSICS　Vol. 97　No. 5　2005/03　Research paper (scientific journal)

  43. Measurements of desorbed products by plasma beam irradiation on SiO2

    K Kurihara, Y Yamaoka, K Karahashi, M Sekine

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 22　No. 6　p. 2311-2314　2004/11　Research paper (scientific journal)

  44. Etching yield Of SiO2 irradiated by F+, CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV

    K Karahashi, K Yanai, K Ishikawa, H Tsuboi, K Kurihara, M Nakamura

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 22　No. 4　p. 1166-1168　2004/07　Research paper (scientific journal)

  45. Desorption species from fluorocarbon film by Ar+ ion beam bombardment

    M Hayashi, K Karahashi

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS　Vol. 18　No. 4　p. 1881-1886　2000/07　Research paper (scientific journal)

  46. Etching Reactions on Silicon Surfaces by Hyperthermal Molecular Beam.

    唐橋一浩

    表面科学　Vol. 18　No. 12　1997

  47. Collision-induced reaction of a fluorinated Si(100) by hyperthermal Xe atoms

    K Karahashi, J Matsuo, H Horiuchi

    SURFACE SCIENCE　Vol. 357　No. 1-3　p. 800-803　1996/06　Research paper (scientific journal)

  48. STUDY OF THE ETCHING REACTION BY ATOMIC CHLORINE USING MOLECULAR-BEAM SCATTERING

    K KARAHASHI, J MATSUO, K HORIUCHI

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　Vol. 33　No. 4B　p. 2252-2254　1994/04　Research paper (scientific journal)

  49. REACTION-KINETICS OF CHLORINE ON SI(111)7X7 SURFACES

    J MATSUO, F YANNICK, K KARAHASHI

    SURFACE SCIENCE　Vol. 283　No. 1-3　p. 52-57　1993/03　Research paper (scientific journal)

  50. REACTION-KINETICS OF ATOMIC CHLORINE ON SI(100)2X1

    K KARAHASHI, J MATSUO, K HORIUCHI

    EVOLUTION OF SURFACE AND THIN FILM MICROSTRUCTURE　Vol. 280　p. 189-192　1993　Research paper (international conference proceedings)

  51. Molecular beam study of semiconductor surface reactions. Reaction mechanism of chlorine on silicon surfaces.

    松尾二郎, 唐橋一浩

    応用物理　Vol. 62　No. 11　1993

  52. Surface reaction analysis by the molecular beam scattering method.

    松尾二郎, 唐橋一浩

    半導体研究　Vol. 38　1993

  53. CHLORINE MOLECULAR-BEAM SCATTERING STUDY ON SI(100)2 X-1 - DESORPTION PRODUCTS

    K KARAHASHI, J MATSUO, S HIJIYA

    APPLIED SURFACE SCIENCE　Vol. 60-1　p. 126-130　1992/08　Research paper (scientific journal)

  54. STUDY ON CHLORINE ADSORBED SILICON SURFACE USING SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY

    J MATSUO, K KARAHASHI, A SATO, S HIJIYA

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　Vol. 31　No. 6B　p. 2025-2029　1992/06　Research paper (scientific journal)

Misc. 30

  1. Low energy ion reactions of SiN plasma-enhanced atomic layer deposition

    伊藤智子, 北英和, 鈴木歩太, 加賀谷宗仁, 松隈正明, 松崎和愛, 唐橋一浩, 浜口智志

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　Vol. 69th　2022

  2. Surface Reaction Mechanisms to Realize High-throughput SiN ALE

    平田瑛子, 深沢正永, TERCERO J. U., 釘宮克尚, 萩本賢哉, 唐橋一浩, 浜口智志, 岩元勇人

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　Vol. 83rd　2022

  3. Surface reactions of fluorinated Y2O3 by H+ and O+ ion irradiation

    Kang Hojun, Ito Tomoko, Um Junghwan, Kokura Hikaru, Kang Taekyun, Cho Sung-Il, Park Hyunjung, Karahashi Kazuhiro, Hamaguchi Satoshi

    JSAP Annual Meetings Extended Abstracts　Vol. 2021.1　p. 1465-1465　2021/02/26

    Publisher: The Japan Society of Applied Physics

  4. Surface reactions induced by low-energy ion irradiation in atomic layer processes

    伊藤智子, 唐橋一浩, 浜口智志

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　Vol. 82nd　2021

  5. Effect of Atomic Layer Etching Adsorption Layer on Substrate Damage Generation

    平田瑛子, 平田瑛子, 深沢正永, 釘宮克尚, 萩本賢哉, 岩元勇人, TERCERO J. U., 礒部倫郎, 伊藤智子, 唐橋一浩, 浜口智志

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　Vol. 82nd　2021

  6. プラズマ原子層プロセシングにおけるアセチルアセトン-酸化ニッケル表面反応のab initio DFT計算

    中村花菜, 伊藤智子, 唐橋一浩, 浜口智志, 竹内孝江, 竹内孝江

    日本化学会春季年会講演予稿集(CD-ROM)　Vol. 99th　2019

  7. SiN Atomic Layer Etching表面状態の変動解析

    平田瑛子, 深沢正永, 釘宮克尚, 長岡弘二郎, 唐橋一浩, 浜口智志

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　Vol. 80th　2019

  8. F+イオン照射によるY2O3表面層の変化

    KANG Hojun, 伊藤智子, UM Junghwan, KOKURA Hikaru, KANG Taekyun, CHO Sungil, PARK Hyunjung, 磯部倫郎, 唐橋一浩, 浜口智志

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　Vol. 80th　2019

  9. 低エネルギーイオンによるフッ化物層のエッチング反応

    唐橋一浩, 伊藤智子, 浜口智志

    プラズマ・核融合学会年会(Web)　Vol. 35th　2018

  10. 遷移金属に対するβ-ジケトンによる吸着表面反応の解明

    伊藤智子, 唐橋一浩, 浜口智志

    プラズマ・核融合学会年会(Web)　Vol. 35th　2018

  11. Chemical Effects of Hydrogen Ion Irradiation on ITO Etching by Hydrocarbon Plasma

    LI HU, Karahashi Kazuhiro, Fukasawa Masanaga, Nagahata Kazunori, Tatsumi Tetsuya, Hamaguchi Satoshi

    JSAP Annual Meetings Extended Abstracts　Vol. 2016.2　p. 1690-1690　2016/09/01

    Publisher: The Japan Society of Applied Physics

  12. Effects of hydrogen radicals on etching reactions of transparent conducting oxides

    Li Hu, Karahashi Kazuhiro, Fukasawa Masanaga, Kazunori Nagahata, Tetsuya Tatsumi, Satoshi Hamaguchi

    JSAP Annual Meetings Extended Abstracts　Vol. 2015.1　p. 1665-1665　2015/02/26

    Publisher: The Japan Society of Applied Physics

  13. Analyses of chemical effects of CH+ and CH3+ on etching processes of transparent conducting films

    Li Hu, Karahashi Kazuhiro, Fukasawa Masanaga, Nagahata Kazunori, Tatsumi Tetsuya, Hamaguchi Satoshi

    JSAP Annual Meetings Extended Abstracts　Vol. 2014.2　p. 1615-1615　2014/09/01

    Publisher: The Japan Society of Applied Physics

  14. Etching reactions for Si, SiO2 and SiN by SiBrx ions

    karahashi kazuhiro, muraki yu, li hu, matsukuma masaaki, hamaguchi satoshi

    JSAP Annual Meetings Extended Abstracts　Vol. 2014.1　p. 1666-1666　2014/03/03

    Publisher: The Japan Society of Applied Physics

  15. COクラスターの生成および評価

    唐橋一浩, 瀬木利夫, 松尾二郎, 浜口智志

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　Vol. 61st　2014

  16. 高エネルギー水素イオン入射によるSi表面の増殖酸化

    伊藤智子, 溝谷浩平, 礒部倫郎, 唐橋一浩, 深沢正永, 長畑和典, 辰巳哲也, 浜口智志

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　Vol. 74th　2013

  17. HBrプラズマにおける斜め入射イオンおよび反応生成物(SiBrx)イオンによる反応

    村木裕, LI Hu, 伊藤智子, 唐橋一浩, 松隈正明, 浜口智志

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　Vol. 74th　2013

  18. ヘテロエピタキシャルダイヤモンド成長のためのIr(100)/MgOへの低エネルギー炭素イオン照射

    井谷司, 井谷司, 山崎一寿, 伊藤智子, 唐橋一浩, 浜口智志

    応用物理学関係連合講演会講演予稿集(CD-ROM)　Vol. 59th　2012

  19. フロロカーボンイオン照射におけるSiNx:H膜中の水素の含有率の違いによるエッチング反応への影響

    伊藤智子, 唐橋一浩, 深沢正永, 辰巳哲也, 浜口智志

    応用物理学関係連合講演会講演予稿集(CD-ROM)　Vol. 59th　2012

  20. メタノールプラズマ中のイオン照射によるFeCoBエッチング反応

    唐橋一浩, 伊藤智子, 浜口智志

    応用物理学関係連合講演会講演予稿集(CD-ROM)　Vol. 59th　2012

  21. SiFx+イオン照射によるSi,Si3N4およびSiO2エッチング反応解析

    伊藤智子, 唐橋一浩, 浜口智志

    応用物理学会学術講演会講演予稿集(CD-ROM)　Vol. 73rd　2012

  22. CO+イオンによるCo,NiおよびTaエッチング反応

    唐橋一浩, 伊藤智子, 浜口智志

    応用物理学関係連合講演会講演予稿集(CD-ROM)　Vol. 58th　2011

  23. SiClx+イオン照射によるSiエッチング反応解析

    伊藤智子, 唐橋一浩, KAN Song-Yun, 浜口智志

    応用物理学会学術講演会講演予稿集(CD-ROM)　Vol. 72nd　2011

  24. Si酸化反応における水素イオン照射効果

    伊藤智子, 唐橋一浩, 深沢正永, 辰巳哲也, 浜口智志

    応用物理学関係連合講演会講演予稿集(CD-ROM)　Vol. 58th　2011

  25. CHxFy+イオン照射によるエッチング反応の評価

    伊藤智子, 唐橋一浩, 深沢正永, 辰巳哲也, 浜口智志

    応用物理学関係連合講演会講演予稿集(CD-ROM)　Vol. 57th　2010

  26. 反応性イオンによるPt,CoおよびPtCoエッチング反応

    唐橋一浩, 伊藤智子, 浜口智志

    応用物理学関係連合講演会講演予稿集(CD-ROM)　Vol. 57th　2010

  27. CO+イオンによるPt,CoおよびPtCoエッチング反応

    唐橋一浩, 伊藤智子, 浜口智志

    応用物理学会学術講演会講演予稿集(CD-ROM)　Vol. 71st　2010

  28. CHxFy+イオンエッチングにおける水素の効果

    伊藤智子, 唐橋一浩, 深沢正永, 辰巳哲也, 浜口智志

    応用物理学会学術講演会講演予稿集(CD-ROM)　Vol. 71st　2010

  29. Cl+,Br+イオン照射によるSiエッチング反応の評価

    伊藤智子, 松本祥志, 唐橋一浩, KANG Song-Yun, 浜口智志

    応用物理学関係連合講演会講演予稿集　Vol. 56th　No. 1　2009

  30. Cl+.Br+イオン照射によるSiエッチング反応における水素の影響

    伊藤智子, 唐橋一浩, KANG Song-Yun, 浜口智志

    応用物理学会学術講演会講演予稿集　Vol. 70th　No. 1　2009

Institutional Repository 9

Content Published in the University of Osaka Institutional Repository (OUKA)

  1. Mechanism of SiN etching rate fluctuation in atomic layer etching

    Hirata Akiko, Fukasawa Masanaga, Kugimiya Katsuhisa, Nagaoka Kojiro, Karahashi Kazuhiro, Hamaguchi Satoshi, Iwamoto Hayato

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 38　No. 6　2020/12

  2. Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2on a nickel oxide surface in atomic layer etching processes

    Basher Abdulrahman H., Krstić Marjan, Fink Karin, Ito Tomoko, Karahashi Kazuhiro, Wenzel Wolfgang, Hamaguchi Satoshi

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 38　No. 5　2020/09

  3. Stability of hexafluoroacetylacetone molecules on metallic and oxidized nickel surfaces in atomic-layer-etching processes

    Basher Abdulrahman H., Krstić Marjan, Takeuchi Takae, Isobe Michiro, Ito Tomoko, Kiuchi Masato, Karahashi Kazuhiro, Wenzel Wolfgang, Hamaguchi Satoshi

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 38　No. 2　2020/03

  4. Effects of hydrogen ion irradiation on zinc oxide etching

    Li Hu, Karahashi Kazuhiro, Friederich Pascal, Fink Karin, Fukasawa Masanaga, Hirata Akiko, Nagahata Kazunori, Tatsumi Tetsuya, Wenzel Wolfgang, Hamaguchi Satoshi

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 35　No. 5　2017/09

  5. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Li Hu, Karahashi Kazuhiro, Fukasawa Masanaga, Nagahata Kazunori, Tatsumi Tetsuya, Hamaguchi Satoshi

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 33　No. 6　2015/11

  6. Correlation between dry etching resistance of Ta masks and the oxidation states of the surface oxide layers

    Satake Makoto, Yamada Masaki, Li Hu, Karahashi Kazuhiro, Hamaguchi Satoshi

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics　Vol. 33　No. 5　2015/09

  7. Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

    Li Hu, Muraki Yu, Karahashi Kazuhiro, Hamaguchi Satoshi

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 33　No. 4　2015/07

  8. Characteristics of silicon etching by silicon chloride ions

    Ito Tomoko, Karahashi Kazuhiro, Kang Song Yun, Hamaguchi Satoshi

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 31　No. 3　2013/05

  9. Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2 +, and CH2F+ ions

    Ito Tomoko, Karahashi Kazuhiro, Fukasawa Masanaga, Tatsumi Tetsuya, Hamaguchi Satoshi

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 29　No. 5　2011/09