顔写真

PHOTO

Ohmi Hiromasa
大参　宏昌
Ohmi Hiromasa
大参　宏昌
Institutional repository
Graduate School of Engineering　Division of Precision Science & Technology and Applied Physics, Associate Professor

keyword Surface and Interface，electronics material，Quantum Optics(Laser)，Applied Optics

Institutional repository

Research History 1

  1. 2023/10 - Present
    Osaka University　Graduate School of Engineering, Division of Engineering Physics　Associate Professor

Education 1

  1. Osaka University

    - 2001

Committee Memberships 11

  1. 精密工学会 超精密加工専門委員会　幹事　Academic society

    2011/04 - Present

  2. 電気学会　論文委員会委員　Academic society

    2008/04 - Present

  3. 公益社団法人 精密工学会　校閲委員 幹事　Academic society

    2020/04 - 2024/03

  4. 精密工学会　精密工学会秋季大会 実行委員　Academic society

    2017/04 - 2017/10

  5. 精密工学会　精密工学会秋季大会 実行委員　Academic society

    2001/04 - 2001/09

  6. 5th international symposium on atomically controlled fabrication technology,　Steering committee　Academic society

    2012/10 -

  7. 4th international symposium on atomically controlled fabrication technology,　Steering committee　Academic society

    2011/10 -

  8. 3rd international symposium on atomically controlled fabrication technology,　Steering committee　Academic society

    2010/11 -

  9. 2nd international symposium on atomically controlled fabrication technology,　Steering committee　Academic society

    2009/11 -

  10. 1st international symposium on atomically controlled fabrication technology,　Steering committee　Academic society

    2009/02 -

  11. International 21st century COE symposium on Atomistic Fabrication Technology 2007,　Steering committee　Academic society

    2007/10 -

Professional Memberships 5

  1. THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN

  2. 精密工学会

  3. 応用物理学会

  4. The Japan Society of Applied Physics

  5. Japan Society for Precision Engineering

Research Areas 5

  1. Energy / Basic plasma science /

  2. Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

  3. Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Manufacturing and production engineering /

  4. Nanotechnology/Materials / Optical engineering and photonics /

  5. Nanotechnology/Materials / Thin-film surfaces and interfaces /

Awards 8

  1. 2022年度精密工学会秋季大会学術講演会 ベストプレゼンテーション賞

    武田聖矢, 山内怜大, 大谷燎平, 大参宏昌, 垣内弘章　公益社団法人 精密工学会　2023/01

  2. 2022年度精密工学会春季大会学術講演会 ベストプレゼンテーション賞

    関戸拓郎, 中村航己, 垣内弘章, 大参宏昌　公益社団法人 精密工学会　2022/05

  3. 2021年度精密工学会春季大会学術講演会 ベストプレゼンテーション賞

    中塚 宏学、田中 領、垣内 弘章、安武 潔、大参 宏昌　公益社団法人 精密工学会　2021/05

  4. 2017年度 精密工学会 秋季大会学術講演会 ベストオーガナイザー賞

    大参宏昌, 須崎嘉文　公益財団法人 精密工学会　2017/10

  5. Poster award of excellence

    H.Takemoto, Y. Ishikawa, H. Kakiuchi, K. Yasutake, H. Ohmi　Taiwan Association for Coatings and Thin Films Technology　2015/11

  6. 大阪大学 総長奨励賞

    大参宏昌　大阪大学　2015/07

  7. 大阪大学 総長奨励賞

    大参宏昌　大阪大学　2014/07

  8. 精密工学会沼田記念論文賞

    森 勇藏, 芳井熊安, 安武 潔, 垣内弘章, 大参宏昌, 和田勝男　社団法人精密工学会　2004/03

Papers 189

  1. High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

    Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi

    Journal of Physics D: Applied Physics　Vol. 57　No. 27　p. 275204-275204　2024/04/12　Research paper (scientific journal)

    Publisher: IOP Publishing

  2. Role of O2 and N2 addition on low-reflectance Si surface formation using moderate-pressure (3.3 kPa) hydrogen plasma

    Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi

    Physica Scripta　Vol. 98　No. 11　p. 115609-115609　2023/10/13　Research paper (scientific journal)

    Publisher: IOP Publishing

  3. Shallow defect layer formation as Cu gettering layer of ultra-thin Si chips using moderate-pressure (3.3 kPa) hydrogen plasma

    Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi

    Journal of Applied Physics　Vol. 133　No. 16　2023/04/24　Research paper (scientific journal)

    Publisher: AIP Publishing

  4. Improvement of deposition characteristics of silicon oxide layers using argon-based atmospheric-pressure very high-frequency plasma

    Hiroaki Kakiuchi, Hiromasa Ohmi, Seiya Takeda, Kiyoshi Yasutake

    Journal of Applied Physics　Vol. 132　No. 10　p. 103302-103302　2022/09/14　Research paper (scientific journal)

    Publisher: AIP Publishing

  5. Si nanocone structure fabricated by a relatively high-pressure hydrogen plasma in the range of 3.3–27 kPa

    Toshimitsu Nomura, Kenta Kimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

    Journal of Vacuum Science & Technology B　Vol. 40　No. 3　p. 032801-032801　2022/05　Research paper (scientific journal)

    Publisher: American Vacuum Society

  6. Formation of indium nitride nanostructures by atmospheric pressure plasma nitridation of molten indium

    Kazushi Yoshida, Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi

    Journal of Applied Physics　Vol. 130　No. 6　p. 063301-063301　2021/08/14　Research paper (scientific journal)

    Publisher: AIP Publishing

  7. Gas-phase kinetics in atmospheric-pressure plasma-enhanced chemical vapor deposition of silicon films

    Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake

    Journal of Applied Physics　Vol. 130　No. 5　p. 053307-053307　2021/08/07　Research paper (scientific journal)

    Publisher: AIP Publishing

  8. Diffusion of excessively adsorbed hydrogen atoms on hydrogen terminated Si(100)(2×1) surface

    Kouji Inagaki, Yoshitada Morikawa, Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi

    AIP Advances　Vol. 11　No. 8　p. 085318-085318　2021/08/01　Research paper (scientific journal)

  9. Solution-based coating and printing of polycrystalline Ge films using GeO2 solution by moderate-pressure hydrogen plasma reduction

    Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki K Kakiuchi

    Flexible and Printed Electronics　Vol. 6　2021/07/05　Research paper (scientific journal)

    Publisher: IOP Publishing

  10. Study on silicon removal property and surface smoothing phenomenon by moderate-pressure microwave hydrogen plasma

    Hiromasa Ohmi, Kenta Kimoto, Toshimitsu Nomura, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Materials Science in Semiconductor Processing　Vol. 129　p. 105780-105780　2021/07　Research paper (scientific journal)

    Publisher: Elsevier BV

  11. Plasma parameters in very high frequency argon plasmas mixed with nitrogen at atmospheric pressure

    Kiyoshi Yasutake, Kazushi Yoshida, Hiromasa Ohmi, Hiroaki Kakiuchi

    Journal of Applied Physics　Vol. 129　No. 17　p. 173302-173302　2021/05/07　Research paper (scientific journal)

    Publisher: AIP Publishing

  12. Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4

    Daiki Iino, Satoshi Tanida, Kazuaki Kurihara, Hiroyuki Fukumizu, Itsuko Sakai, Junko Abe, Jota Fukuhara, Rei Tanaka, Tomoyuki Tanaka, Jou Kikura, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi, Hisataka Hayashi

    Japanese Journal of Applied Physics　Vol. 60　No. 5　p. 050904-050904　2021/05/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  13. On-site tetrafluoroethylene gas generation from moderate-pressure pure tetrafluoromethane plasma reactor

    Hiromasa Ohmi, Jou Kikura, Tomoyuki Tanaka, Rei Tanaka, Daiki Iino, Itsuko Sakai, Kazuaki Kurihara, Hiroyuki Fukumizu, Junko Abe, Jota Fukuhara, Hisataka Hayashi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Chemical Engineering Science　Vol. 229　p. 116125-116125　2021/01　Research paper (scientific journal)

    Publisher: Elsevier BV

  14. Plasma parameters in very high frequency helium and argon plasmas at atmospheric pressure

    Kazushi Yoshida, Ken Nitta, Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi

    Journal of Applied Physics　Vol. 128　No. 13　p. 133303-133303　2020/10/07　Research paper (scientific journal)

    Publisher: AIP Publishing

  15. Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors

    Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake

    Journal of Physics D: Applied Physics　Vol. 53　No. 41　p. 415201-415201　2020/10/07　Research paper (scientific journal)

    Publisher: IOP Publishing

  16. The effect of pretreatment for SiH4 gas by microwave plasma on Si film formation behavior by thermal CVD

    Keiichi Hamanaka, Norihisa Takei, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

    Plasma Processes and Polymers　Vol. 17　No. 4　p. 1900198-1900198　2020/04　Research paper (scientific journal)

    Publisher: Wiley

  17. Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure

    Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake

    Precision Engineering　Vol. 60　p. 265-273　2019/11　Research paper (scientific journal)

    Publisher: Elsevier BV

  18. Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

    Ohmi Hiromasa, Sato Jumpei, Shirasu Yoshiki, Hirano Tatsuya, Kakiuchi Hiroaki, Yasutake Kiyoshi

    ACS OMEGA　Vol. 4　No. 2　p. 4360-4366　2019/02

  19. Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

    Kakiuchi Hiroaki, Ohmi Hiromasa, Yasutake Kiyoshi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS　Vol. 51　No. 35　2018/09/05

  20. On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

    Norihisa Takei, Fumiya Shinoda, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

    Journal of Physics D: Applied Physics　Vol. 51　No. 24　2018/05/24　Research paper (scientific journal)

  21. Study of the interaction between molten indium and sub-atmospheric pressure hydrogen glow discharge for low-temperature nanostructured metallic particle film deposition

    Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    JOURNAL OF ALLOYS AND COMPOUNDS　Vol. 728　p. 1217-1225　2017/09　Research paper (scientific journal)

  22. Study of the interaction between molten indium and sub-atmospheric pressure hydrogen glow discharge for low-temperature nanostructured metallic particle film deposition

    H. Ohmi, H. Kakiuchi, K. Yasutake

    Journal of Alloys and Compounds,　Vol. 728　p. 1217-1225　2017/09　Research paper (scientific journal)

  23. Determination of plasma impedance of microwave plasma system by electric field simulation

    Mitsutoshi Shuto, Hiromasa Ohmi, Hiroaki Kakiuchi, Takahiro Yamada, Kiyoshi Yasutake

    JOURNAL OF APPLIED PHYSICS　Vol. 122　No. 4　p. 043303-1-043303-8　2017/07　Research paper (scientific journal)

  24. Copper dry etching by sub-atmospheric-pressure pure hydrogen glow plasma

    Hiromasa Ohmi, Jumpei Sato, Tatsuya Hirano, Yusuke Kubota, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Applied Physics Letters　Vol. 109　No. 21　p. 211603-1-211603-5　2016/11　Research paper (scientific journal)

  25. Atmospheric-Pressure Low-Temperature Plasma Processes

    H. Kakiuchi, H. Ohmi, K. Yasutake

    Encyclopedia of Plasma Technology　2016/11

    Publisher: CRC Press

  26. Magnesium hydride film formation using subatmospheric pressure H2 plasma at low temperature

    Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics　Vol. 34　No. 4　2016/07/01　Research paper (scientific journal)

    Publisher: American Institute of Physics Inc.

  27. Selective Boron Elimination from B2H6-SiH4 Gas Mixtures for Purifying Si

    Hiromasa Ohmi, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY　Vol. 5　No. 9　p. P471-P477　2016/07　Research paper (scientific journal)

  28. Magnesium hydride film formation using subatmospheric pressure H-2 plasma at low temperature

    Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B　Vol. 34　No. 4　2016/05　Research paper (scientific journal)

  29. Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry

    Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    JOURNAL OF APPLIED PHYSICS　Vol. 119　No. 6　2016/02　Research paper (scientific journal)

  30. Selective Boron Elimination from B2H6-SiH4 Gas Mixtures for Purifying Si

    Hiromasa Ohmi, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY　Vol. 5　No. 9　p. P471-P477　2016　Research paper (scientific journal)

  31. Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma

    Hiromasa Ohmi, Takeshi Funaki, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Journal of Physics D: Applied Physics　Vol. 49　No. 3　2015/12/09　Research paper (scientific journal)

    Publisher: Institute of Physics Publishing

  32. Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma

    Hiromasa Ohmi, Takeshi Funaki, Hiroaki Kakiuchi, Kiyoshi Yasutake

    JOURNAL OF PHYSICS D-APPLIED PHYSICS　Vol. 49　No. 3　2015/12　Research paper (scientific journal)

  33. Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

    Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    JOURNAL OF APPLIED PHYSICS　Vol. 118　No. 4　2015/07　Research paper (scientific journal)

  34. Nucleation for Si film selective growth using GeO2 solution and high-pressure plasma

    Hiromasa Ohmi, Akihiro Goto, Yuji Onoshita, Hiroaki Kakiuchi, Kiyoshi Yasutake

    ABSTRACT BOOKLET of 20th international colloquium of plasma processes　p. 99-99　2015/06

  35. 高圧マイクロ波水素プラズマを用いたSi高速エッチングにおける高効率SiH4製造プロセスの開発 ―Siエッチング効率の決定と最適条件の検討―

    平野達也, 山田高寛, 大参宏昌, 垣内弘章, 安武潔

    精密工学会 2015年度関西地方定期学術講演会 講演論文集　p. 8-9　2015/06　Research paper (other academic)

  36. Characterization of Si and SiOx films deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors

    Hiroaki Kakiuchi, Hiromasa Ohmi, Takahiro Yamada, Shogo Tamaki, Takayuki Sakaguchi, WeiCheng Lin, Kiyoshi Yasutake

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　Vol. 212　No. 7　p. 1571-1577　2015/05　Research paper (scientific journal)

  37. 低温薄膜トランジスタへの応用に向けた大気圧プラズマCVDによるSi成膜プロセスの研究

    田牧 祥吾, 坂口 尭之, 木元 雄一朗, 寺脇 功士, 大参 宏昌, 垣内 弘章, 安武 潔

    精密工学会学術講演会講演論文集　Vol. 2015　p. 511-512　2015

    Publisher: 公益社団法人 精密工学会

  38. 高圧力マイクロ波水素プラズマ中のH密度評価（キーノートスピーチ）

    安武 潔, 山田 高寛, 垣内 弘章, 大参 宏昌

    精密工学会学術講演会講演論文集　Vol. 2015　p. 1071-1072　2015

    Publisher: 公益社団法人 精密工学会

  39. シミュレーションによる挟ギャップマイクロ波プラズマの解析

    足立 昂拓, 首藤 光利, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

    精密工学会学術講演会講演論文集　Vol. 2015　p. 1073-1074　2015

    Publisher: 公益社団法人 精密工学会

  40. 大気圧VHFプラズマによるSiの低温・高速成膜技術の開発

    坂口 尭之, 林 威成, 田牧 祥吾, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

    精密工学会学術講演会講演論文集　Vol. 2015　p. 1075-1076　2015

    Publisher: 公益社団法人 精密工学会

  41. Atmospheric-pressure low-temperature plasma processes for thin film deposition

    Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 32　No. 3　2014/05　Research paper (scientific journal)

  42. Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

    H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, W. Lin, K. Yasutake

    Surface and Coatings Technology　Vol. 234　p. 2-7　2013/07　Research paper (scientific journal)

  43. Effect of H2 flow rate on high-rate etching of Si by narrow-gap microwave hydrogen plasma

    Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Plasma Chemistry and Plasma Processing　Vol. 33　No. 4　p. 797-806　2013/06　Research paper (scientific journal)

  44. Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

    Zeteng Zhuo, Yuta Sannomiya, Yuki Kanetani, Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    NANOSCALE RESEARCH LETTERS　Vol. 8　2013/05　Research paper (scientific journal)

  45. Voltage distribution over capacitively coupled plasma electrode for atmospheric-pressure plasma generation

    Mitsutoshi Shuto, Fukumi Tomino, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    NANOSCALE RESEARCH LETTERS　Vol. 8　2013/05　Research paper (scientific journal)

  46. Investigation of high-rate etching process of silicon by high-pressure microwave hydrogen plasma

    Yamada Takahiro, Yamada Kosuke, Adachi Takahiro, Ohmi Hiromasa, Kakiuchi Hiroaki, Yasutake Kiyoshi

    Proceedings of JSPE Semestrial Meeting　Vol. 2013　p. 551-552　2013

    Publisher: The Japan Society for Precision Engineering

  47. 高圧マイクロ波水素プラズマによるシリコン高速エッチングにおけるプラズマ中でのシラン分解

    山田 浩輔, 山田 高寛, 足立 昂拓, 大参 宏昌, 垣内 弘章, 安武 潔

    精密工学会学術講演会講演論文集　Vol. 2013　p. 553-554　2013

    Publisher: 公益社団法人 精密工学会

  48. 大気開放プラズマ酸化による太陽電池用Si表面パッシベーョン技術の開発

    藤原 裕平, 金谷 優樹, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

    精密工学会学術講演会講演論文集　Vol. 2013　p. 583-584　2013

    Publisher: 公益社団法人 精密工学会

  49. High rate deposition of ZnO thin films using atmospheric-pressure radio-frequency plasma:Influence of working parameters on the growth of ZnO films

    Nagashima Masaru, Mizuno Yusuke, Yamada Takahiro, Ohmi Hiromasa, Kakiuchi Hiroaki, Yasutake Kiyoshi

    Proceedings of JSPE Semestrial Meeting　Vol. 2013　p. 585-586　2013

    Publisher: The Japan Society for Precision Engineering

  50. Low temperature and High-Rate Deposition of Si Films Using Atmospheric-Pressure Very High-Frequency Plasma:Fabrication and Characterization of Bottom-Gate Thin Film Transistors

    Lin Weicheng, Okamura Kohei, Sakaguchi Takayuki, Yamada Takahiro, Ohmi Hiromasa, Kakiuchi Hiroaki, Yasutake Kiyoshi

    Proceedings of JSPE Semestrial Meeting　Vol. 2013　p. 565-566　2013

    Publisher: The Japan Society for Precision Engineering

  51. Study on the growth of microcrystalline silicon films in atmospheric-pressure VHF plasma using porous carbon electrode

    H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, K. Yasutake

    Journal of Physics: Conference Series　Vol. 417　No. 1　2013　Research paper (international conference proceedings)

    Publisher: Institute of Physics Publishing

  52. Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation

    Zeteng Zhuo, Yuta Sannomiya, Kazuma Goto, Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    CURRENT APPLIED PHYSICS　Vol. 12　p. S57-S62　2012/12　Research paper (scientific journal)

  53. Atmospheric Pressure Plasma Processes for Preparation of Si-Based Thin Films

    K. Yasutake, H. Ohmi, T. Yamada, H. Kakiuchi

    Abst. 59th AVS Int. Symp.　2012/10　Research paper (international conference proceedings)

  54. Silicon Oxide Coatings with Very High Rates (> 10 nm/s) by Hexamethyldisiloxane-Oxygen Fed Atmospheric-Pressure VHF Plasma: Film-Forming Behavior Using Cylindrical Rotary Electrode

    Hiroaki Kakiuchi, Hiromasa Ohmi, Takahiro Yamada, Keiji Yokoyama, Kohei Okamura, Kiyoshi Yasutake

    PLASMA CHEMISTRY AND PLASMA PROCESSING　Vol. 32　No. 3　p. 533-545　2012/03　Research paper (scientific journal)

  55. Siのマイクロ波水素プラズマエッチングにおける水素ガス流れと熱伝導のシミュレーション

    岡本 康平, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

    精密工学会学術講演会講演論文集　Vol. 2012　p. 333-334　2012

    Publisher: 公益社団法人 精密工学会

  56. High-rate HMDSO-based coatings in open air using atmospheric-pressure plasma jet

    H. Kakiuchi, K. Higashida, T. Shibata, H. Ohmi, T. Yamada, K. Yasutake

    JOURNAL OF NON-CRYSTALLINE SOLIDS　Vol. 358　No. 17　p. 2462-2465　2012/01　Research paper (scientific journal)

  57. Chemical transport technique in high-pressure plasma for crystalline Si based solar cell

    H. Ohmi, H. Kakiuchi, K. Yasutake

    TACT2011 International Thin Films Conference　2011/11　Research paper (international conference proceedings)

  58. Purified epitaxial Si film made from low-purity Si feedstock by high-pressure plasma gasification method (Oral)

    H. Ohmi, T. Yamada, H. Kakiuchi, K. Yasutake

    ITFPC-MIATEC 2011,Innovations in Thin Film Processing and Characterisation &Magnetron, Ion processing and Arc Technologies European Conference　2011/11　Research paper (international conference proceedings)

  59. Study on the Growth of Hydrogenated Amorphous and Microcrystalline Silicon Films Deposited with High Rates Using Atmospheric-Pressure VHF Plasma

    H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, K. Yasutake

    Abst. 15th International Conference on Thin Films, 2011　2011/11　Research paper (international conference proceedings)

  60. Atmospheric-Pressure Plasma Oxidation Process for Si Surface Passivation

    Y. Sannnomiya, K. Goto, ZT. Zhuo, Y. Kanetani, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Abst. 15th International Conference on Thin Films, 2011　2011/11　Research paper (international conference proceedings)

  61. Structural Characterization of Room-Temperature Silicon Oxides Deposited from Hexamethyldisiloxane-O・xygen Mixtures Using Atmospheric-Pressure VHF Plasma

    K. Yokoyama, K. Okamura, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Abst. 15th International Conference on Thin Films, 2011　2011/11　Research paper (international conference proceedings)

  62. Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma

    T. Yamada, K. Okamoto, H. Ohmi, H. Kakiuchi, K. Yasutake

    21st International Photovoltaic Science and Engineering Conference　Vol. 51　No. 10　2011/11　Research paper (international conference proceedings)

  63. Atmospheric-Pressure Plasma Processes for Efficient Formation of Functional Thin Films at Low-Temperatures

    K. Yasutake, H. Ohmi, T. Yamada, H. Kakiuchi

    Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

  64. Formation of SiOxNy Films for Passivation of Si Surfaces by Atmospheric-Pressure Plasma Oxidation

    ZT. Zhuo, K. Goto, Y. Sannomiya, Y. Kanetani, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

  65. Silicon Oxide Anti-Reflection Coatings from Hexamethyldisiloxane at Room Temperature Using Atmospheric-Pressure VHF plasma

    K. Yokoyama, K. Okamura, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

  66. Fundamental Study on the Film Growth from Organometallic precursors Using Atmospheric-Pressure Radio-Frequency Plasma

    S. Mine, K. Okamura, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

  67. Deposition Characteristics of Silicon Oxides in Open Air Using Atmospheric-Pressure Plasma Jet

    K. Higashida, T. Shibata, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

  68. Effects of Substrate Temperature on High-Rate Etching of Silicon by Microwave H2 Plasma

    T. Yamada, K. Okamoto, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

  69. Influence of the Electrode Configuration on the Growth of Microcrystalline Si Films in Atmospheric-Pressure Very High-Frequency Plasma

    A. Hirano, T. Tsushima, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

  70. New Formation Processes for Solar-Grade Si and TCO Films Using Atmospheric-Pressure Plasma Technology

    K. Yasutake, H. Kakiuchi, T. Yamada, H. Ohmi

    Proc. 2011 Korea & Japan Symposium on Solar Cells　2011/09　Research paper (international conference proceedings)

  71. High-Rate Deposition of Amorphous and Microcrystalline Si Films Using Atmospheric-Pressure VHF Plasma

    H. Kakiuchi, H.Ohmi, T. Yamada, K.Yasutake

    Proc. 2011 Korea & Japan Symposium on Solar Cells　2011/09　Research paper (international conference proceedings)

  72. An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

    K. Yasutake, H. Kakiuchi, H. Ohmi, K. Inagaki, Y. Oshikane, M. Nakano

    JOURNAL OF PHYSICS-CONDENSED MATTER　Vol. 23　No. 39　2011/09　Research paper (scientific journal)

  73. Growth and Properties of Zinc Oxide Films Prepared in Atmospheric-Pressure Radio Frequency Plasma

    S. Mine, S. Okazaki, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Book of Abst. of The 24rd Int. Conf. on Amorphous and Nanocrystalline Semiconductors　2011/08　Research paper (international conference proceedings)

  74. Deposition Characteristics of Silicon Oxides in Open Air Using Atmospheric-Pressure Plasma Jet

    K. Higashida, K. Nakamura, T. Shibata, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Book of Abst. of The 24rd Int. Conf. on Amorphous and Nanocrystalline Semiconductors　2011/08　Research paper (international conference proceedings)

  75. Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen Plasma Induced Chemical Transport

    H. Ohmi, T. Yamada, H. Kakiuchi, K. Yasutake

    Jpn. J. Appl. Phys　Vol. 50　No. 8　2011/08　Research paper (scientific journal)

  76. Surface treatment for crystalline Si solar cell using a solid source high-pressure plasma etching method: texturing and affected layer removal

    H. Ohmi, K. Umehara, H. Kakiuchi, K. Yasutake

    CIP 11 Abstract booklet　2011/07　Research paper (international conference proceedings)

  77. Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport

    H. Ohmi, T. Hori, T. Mori, H. Kakiuchi, K. Yasutake

    J. Phys. D: Appl. Phys.　Vol. 44　No. 23　2011/06　Research paper (scientific journal)

  78. Center of Excellence for Atomically Controlled Fabrication Technology

    Yuji Kuwahara, Akira Saito, Kenta Arima, Hiromasa Ohmi

    J. Nanosc. Nanotechnol　Vol. 11　No. 4　p. 2763-2776　2011/04　Research paper (scientific journal)

  79. Surface Cleaning and Etching of 4H-SiC(0001) Using High-Density Atmospheric Pressure Hydrogen Plasma

    Watanabe, Heiji, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Hosoi, Takuji, Shimura, Takayoshi, Yasutake, Kiyoshi

    Journal of Nanoscience and Nanotechnology　Vol. 11　No. 4　p. 2802-2808　2011/04　Research paper (scientific journal)

  80. Room-Temperature Formation of Low Refractive Index Silicon Oxide Films Using Atmospheric-Pressure Plasma

    Kei Nakamura, Yoshihito Yamaguchi, Keiji Yokoyama, Kosuke Higashida, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY　Vol. 11　No. 4　p. 2851-2855　2011/04　Research paper (scientific journal)

  81. Study on the Growth of Heteroepitaxial Cubic Silicon Carbide Layers in Atmospheric-Pressure H-2-Based Plasma

    Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY　Vol. 11　No. 4　p. 2903-2909　2011/04　Research paper (scientific journal)

  82. Preparation of Si-based thin films using atmospheric pressure plasma chemical vapour deposition (CVD)

    Kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi

    Generation and Applications of Atmospheric Pressure Plasmas　p. 141-162　2011　Part of collection (book)

    Publisher: Nova Science Publishers, Inc.

  83. Formation of μc-SiC film by high-pressure plasma enhanced chemical transport toward its application to emitter layer of bulk silicon solar cell

    Hori Takahiro, Kakiuchi Hiroaki, Yasutake Kiyoshi, Ohmi Hiromasa

    Proceedings of JSPE Semestrial Meeting　Vol. 2011　p. 521-522　2011

    Publisher: The Japan Society for Precision Engineering

  84. Surface treatment characteristics of crystalline Si substrate by etchant source gas-free plasma etching method

    Umehara Kouki, Kakiuchi Hiroaki, Yasutake Kiyoshi, Ohmi Hiromasa

    Proceedings of JSPE Semestrial Meeting　Vol. 2011　p. 531-532　2011

    Publisher: The Japan Society for Precision Engineering

  85. 大気圧プラズマ酸化による太陽電池用Si表面パッシベーション技術の開発

    後藤 一磨, 卓 沢騰, 三宮 佑太, 金谷 優樹, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

    精密工学会学術講演会講演論文集　Vol. 2011　p. 529-530　2011

    Publisher: 公益社団法人 精密工学会

  86. Open Air Deposition of Silicon Oxide Films at Room Temperature Using Atmospheric-Pressure Plasma Jet

    K. Higashida, K. Nakamura, T. Shibata, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology　2010/11　Research paper (international conference proceedings)

  87. Development of Atmospheric-Pressure Plasma Oxidation Process for Surface Passivation of Si

    Z. T. Zhuo, T. Ohnishi, K. Goto, Y. Sannomiya, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology　2010/11　Research paper (international conference proceedings)

  88. Influence of Process Parameters on the Material Properties of Microcrystalline Si Prepared Using Atmospheric-Pressure Very High-Frequency Plasma

    K. Tabuchi, A. Hirano, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology　2010/11　Research paper (international conference proceedings)

  89. Structural Characterization of Room-Temperature Silicon Oxides Deposited from Hexamethyldisiloxane-Oxygen Mixtures at Room Temperature Using Atmospheric-Pressure VHF Plasma

    K. Yokoyama, Y. Mizuno, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology　2010/11　Research paper (international conference proceedings)

  90. Atmospheric-Pressure Plasma Technology for the High-Rate and Low-Temperature Deposition of Si Thin Films

    H. Kakiuchi, H. Ohmi, K. Yasutake

    Abst. 32nd Int. Symp. on Dry Process　2010/11　Research paper (international conference proceedings)

  91. Formation of microcrystalline SiC films by chemical transport with a high-pressure glow plasma of pure hydrogen

    Hiromasa Ohmi, Yoshinori Hamaoka, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Thin Solid Films　Vol. 519　No. 1　p. 11-17　2010/10/29　Research paper (scientific journal)

  92. Atmospheric-Pressure Plasma Oxidation Process for Passivation of Si Surface

    Z.T. Zhuo, T. Ohnishi, K. Goto, Y. Sannomiya, H. Ohmi, H. Kakiuchi, K. Yasutake

    Conf. Proc. 7th ICRP and 63rd GEC　2010/10

  93. Room-Temperature Deposition of Silicon Nitride Films with Very High Rates Using Atmospheric-Pressure Plasma Chemical Vapor Deposition

    H. Kakiuchi, H. Ohmi, K. Yasutake

    Proc. 7th International Conference on Reactive Plasmas, 28th Symposium on Plasma Processing and 63rd Gaseous Electronics Conference, Paris, France, 2010　2010/10

  94. Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma

    H. Kakiuchi, H. Ohmi, Y. Yamaguchi, K. Nakamura, K. Yasutake

    THIN SOLID FILMS　Vol. 519　No. 1　p. 235-239　2010/09　Research paper (scientific journal)

  95. Room-Temperature Silicon Nitrides Prepared with Very High Rates (> 50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma

    Hiroaki Kakiuchi, Hiromasa Ohmi, Kei Nakamura, Yoshihito Yamaguchi, Kiyoshi Yasutake

    PLASMA CHEMISTRY AND PLASMA PROCESSING　Vol. 30　No. 5　p. 579-590　2010/09　Research paper (scientific journal)

  96. Chemical Transport Deposition of Purified Poly-Si Films from Metallurgical-Grade Si Using Subatmospheric-Pressure H2 Plasma

    K. Yasutake, H. Ohmi, H. Kakiuchi

    Abst. 2010 MRS Spring Meeting, Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology–2010, San Francisco, April 6-9, 2010 (A10.1).　Vol. 1245　p. 215-226　2010/04　Research paper (international conference proceedings)

  97. New Formation Process of Solar-Grade Si from Metallurgical-Grade Si by Chemical Transport in Near Atmospheric-Pressure Plasma

    K. Yasutake, H. Ohmi, H. Kakiuchi

    Abst. The 3 rd Int. Conf. on Plasma Nanotechnology & Science (IC-PLANTS 2010), Nagoya, March 11-12, 2010 (I-01).　2010/03

  98. Investigation of structural properties of high-rate deposited SiN x films prepared at low temperatures (100-300 °C) by atmospheric-pressure plasma CVD

    Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

    Physica Status Solidi (C) Current Topics in Solid State Physics　Vol. 7　No. 3-4　p. 824-827　2010/03　Research paper (scientific journal)

  99. Characterization of microcrystalline Si films deposited at low temperatures with high rates by atmospheric-pressure plasma CVD

    K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi, K. Yasutake

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4　Vol. 7　No. 3-4　p. 545-548　2010　Research paper (international conference proceedings)

  100. Investigation of structural properties of high-rate deposited SiN(x) films prepared at low temperatures (100-300 degrees C) by atmospheric-pressure plasma CVD

    Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4　Vol. 7　No. 3-4　p. 824-827　2010　Research paper (international conference proceedings)

  101. New Formation Process of Solar-Grade Si Material Based on Atmospheric-Pressure Plasma Science

    K. Yasutake, H. Ohmi, K. Inagaki, H. Kakiuchi

    Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology　2009/11　Research paper (international conference proceedings)

  102. Low-Temperature Si Epitaxial Growth by Atmospheric-Pressure Plasma CVD

    T. Ohnishi, K. Goto, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology　2009/11　Research paper (international conference proceedings)

  103. Characterization of Room-Temperature Silicon Oxide Films Deposited with High Rates in Atmospheric-Pressure VHF Plasma

    K. Nakamura, Y. Yamaguchi, K. Yokoyama, K. Higashida, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology　2009/11　Research paper (international conference proceedings)

  104. Study on the Growth of Microcrystalline Si Films at Low Temperatures in Atmospheric-Pressure VHF Plasma

    K. Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology　2009/11　Research paper (international conference proceedings)

  105. In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

    T. Ohnishi, Y. Kirihata, H. Ohmi, H. Kakiuchi, K. Yasutake

    ECS Transactions　Vol. 25　No. 8　p. 309-315　2009/10　Research paper (scientific journal)

  106. Characterization of High-Rate Deposited Microcrystalline Si Films Prepared Using Atmospheric-Pressure Very High-Frequency Plasma

    K. Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi, K. Yasutake

    ECS Transactions　Vol. 25　No. 8　p. 405-412　2009/10　Research paper (scientific journal)

  107. Investigation of Deposition Characteristics and Properties of High-Rate Deposited SiNx Films Prepared at Low Temperatures (100-300 C) by Atmospheric-Pressure Plasma CVD

    Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

    Book of Abstracts of the 23rd International Conference on Amorphous and Nanocrystalline Semiconductors　2009/08

  108. Characterization of Microcrystalline Si Films Deposited at Low Temperatures with High Rates by Atmospheric-Pressure Plasma CVD

    K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi, K. Yasutake

    Book of Abstracts of the 23rd International Conference on Amorphous and Nanocrystalline Semiconductors　Vol. 7　No. 3-4　p. 545-548　2009/08　Research paper (international conference proceedings)

  109. Microcrystalline Si films grown at low temperatures (90-220 C) with high rates in atmospheric-pressure VHF plasma

    H. Kakiuchi, H. Ohmi, K. Ouchi, K. Tabuchi, K. Yasutake

    J. Appl. Phys.　Vol. 106　No. 1　2009/07　Research paper (scientific journal)

  110. High-rate deposition of microcrystalline silicon films using atmospheric-pressure VHF plasma

    H. Kakiuchi, H. Ohmi, K. Yasutake

    Journal of The Surface Finishing Society of Japan　Vol. 60　No. 6　p. 371-375　2009/06

    Publisher: （社）表面技術協会

  111. 大気圧プラズマCVD法による高品質Si系薄膜の低温形成

    安武潔, 大参宏昌, 垣内弘章

    第44回応用物理学会スクール「安価,簡単,便利～大気圧プラズマの基礎と応用～」資料集　2009/04

  112. Atmospheric-Pressure Plasma Processes for Efficient Formation of Si Thin Films at Low Temperatures

    K. Yasutake, H. Ohmi, H. Kakiuchi

    Ext. Abst. 1st Int. Symp. on Atomically Controlled Fabrication Technology, －Surface and Thin Film Processing－　2009/02　Research paper (international conference proceedings)

  113. Characterization of Microcrystalline Si Films Deposited with High Rates by Atmospheric-Pressure Plasma Chemical Vapor Deposition

    K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 1st Int. Symp. on Atomically Controlled Fabrication Technology, －Surface and Thin Film Processing－　2009/02　Research paper (international conference proceedings)

  114. Room-Temperature Formation of Silicon Dioxide Films by Atmospheric-Pressure Plasma CVD Using Cylindrical Rotary Electrode

    Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

    Ext. Abst. 1st Int. Symp. on Atomically Controlled Fabrication Technology, －Surface and Thin Film Processing－　2009/02　Research paper (international conference proceedings)

  115. 大気圧プラズマプロセスによるSi系薄膜の低温形成

    安武潔, 大参宏昌, 垣内弘章

    第2回プラズマ新領域研究会講演資料集　2008/12

  116. Simple dry etching method for Si related materials without etching source gased by atmospheric pressure plasma enhanced chemical transport

    Hiromasa Ohmi, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Abstracts of 11th international conference on plasma surface engineering　2008/09　Research paper (international conference proceedings)

  117. Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode

    H. Kakiuchi, H. Ohmi, R. Inudzuka, K. Ouchi, K. Yasutake

    J. Appl. Phys.　Vol. 104　No. 5　2008/09　Research paper (scientific journal)

  118. Impacts of noble gas dilution on Si film structure prepared by atmosphericpressure plasma enhanced chemical transport

    Hiromasa Ohmi, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

    J.Phys. D:Applied Physics　Vol. 41　No. 19　2008/09　Research paper (scientific journal)

  119. High-Quality Si and Related Thin Films Prepared by Atmospheric-Pressure Plasma CVD

    K. Yasutake, H. Kakiuchi, H. Ohmi

    2008/06

  120. In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD

    Y. Kirihata, T. Nomura, H. Ohmi, H. Kakiuchi, K. Yasutake

    Surf. Interface Anal.　Vol. 40　No. 6-7　p. 984-987　2008/06　Research paper (scientific journal)

  121. High-rate preparation of thin Si films by atmospheric-pressure plasma enhanced chemical transport

    Daiki Kamada, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

    Surf. Interface Anal.　Vol. 40　No. 6-7　p. 979-983　2008/06　Research paper (scientific journal)

  122. Heteroepitaxial growth of cubic SiC on Si using very-high-frequency plasma at atmospheric pressure

    Hiroaki Kakiuchi, Hiromasa Ohmi, Masatoshi Aketa, Ryota Nakamura, Kiyoshi Yasutake

    SURFACE AND INTERFACE ANALYSIS　Vol. 40　No. 6-7　p. 974-978　2008/06　Research paper (scientific journal)

  123. Formation of Polycrystalline-Si Thin Films Using Nanocrystalline Ge Nuclei

    Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake

    Abstracts of International Meeting for Future of Electron Devices, Kansai 2008　2008/05

  124. Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei

    C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe, K. Yasutake

    IEICE Technical Report　2008/04

  125. Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power

    Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe, Kiyoshi Yasutake

    Jpn. J. Appl. Phys.　Vol. 47　No. 3　p. 1884-1888　2008/03　Research paper (scientific journal)

  126. thin film formation of functinal materials by atmospheric pressure plasma chemical transport

    Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    2008/02

  127. Atmospheric-Pressure Plasma Processes for Fabrication of Si and SiO2 Thin Films at Low-Temperatures

    K. Yasutake, H. Kakiuchi, H. Ohmi

    Abstracts of The 18th Symposium of Materials Research Society of Japan　2007/12

  128. Metal induced hydrogen effusion from amorphous silicon

    Hiromasa Ohmi, Yoshinori Hamaoka, Hiroaki Kakiuchi, Kiyoshi Yasutake

    APPLIED PHYSICS LETTERS　Vol. 91　No. 24　2007/12　Research paper (scientific journal)

  129. Structural characterization of SiNx films deposited at high rates by atmospheric pressure plasma chemical vapor deposition

    D. Ishimoto, Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

    2007/11

  130. High rate deposition of Si film at low temperature by atmospheric-pressure plasma enhanced chemical transport

    Daiki kamada, Hiromasa Ohmi, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10　Research paper (international conference proceedings)

  131. sterilization process of B.atrophaeus using atmospheric pressure mist plasma

    Keiji Iwamoto, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10

  132. selective growth of silicon by atmospheric pressure plasma enhanced chemical transport

    Kazuya kishimoto, Hiromasa Ohmi, Tetusya Mori, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

    ext. abstracts of international 21st century COE symposium on Atomistic fabrication technology 2007,Osaka, Japan　2007/10　Research paper (international conference proceedings)

  133. Atomospheic-pressure plasma enhanced chemical transport as earth-conscious manufacturing technology

    Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10　Research paper (international conference proceedings)

  134. High-Rate Deposition Microcrystalline Silicon Films at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition

    R. Inudzuka, H. Ohmi, H. Kakiuchi, K. Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10　Research paper (international conference proceedings)

  135. Deposition Characteristics of SiNx Films by Atmospheric Pressure Plasma CVD Using Cylindrical Rotary Electrode

    D. Ishimoto, Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10　Research paper (international conference proceedings)

  136. 3C-SiC Formation by Chemical Transport of Silicon Induced by Atmospheric Pressure H2/CH4 plasma

    H. Kakiuchi, H. Ohmi, K. Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10　Research paper (international conference proceedings)

  137. Preparation of Si1-xGex and SiC compound films by atmospheric pressure plasma enhanced chemical transport

    Hiromasa Ohmi, Yoshinori Hamaoka, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

    2007/09

  138. Si film preparation by atmospheric pressure plasma enhanced chemical transport in H2/He or H2/Ar mixture

    Daiki Kamada, Hiromasa Ohmi, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

    2007/08

  139. high-rate preparation of poly-Si film by atmospheric-pressure plasma enhanced chemical transport wtih high feedstock utilization efficiency

    Hiromasa Ohmi, Kazuya Kishimoto, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

    2007/08

  140. Low-Temperature Oxidation Process of Silicon Using Atmospheric Pressure Plasma

    H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

    Digest of Technical Papers of the 14th International Workshop on Active-Matrix Flatpanel Displays and Devices, 11–13 July 2007, Hyogo, Japan.　2007/07　Research paper (international conference proceedings)

  141. Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma

    Hiromasa Ohmi, Hiroaki Kakiuchi, Yoshinori Hamaoka, Kiyoshi Yasutake

    J.Appl. Phys.　Vol. 102　No. 2　2007/07　Research paper (scientific journal)

  142. structure control of Si films prepared by atmospheric-pressure plasma enhanced chemical transport

    Kazuya Kishimoto, Daiki Kamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyosi Yasutake

    ext.abstracts of the 20th symposium on plasma science for materials　2007/06

    Publisher: SPSM-20実行委員会

  143. Formation of Silicon Carbide at Low Temperatures by Chemical Transport of Silicon Induced by Atmospheric Pressure H2/CH4 Plasma

    H. Kakiuchi, H. Ohmi, K. Yasutake

    Proc. of the 20th Symposium on Plasma Science for Materials (SPSM-20), 21–22 June 2007, Nagoya, Japan.　Vol. 516　No. 19　p. 6580-6584　2007/06　Research paper (international conference proceedings)

  144. Characterization of epitaxial Si films grown at low-temperatures by atmospheric pressure plasma CVD

    Y. Kirihata, N. Tawara, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake

    Abstracts 5th Int. Conf. on Silicon Epitaxy and Heterostructures　2007/05　Research paper (international conference proceedings)

  145. High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

    K. Yasutake, H. Ohmi, Y. Kirihata, H. Kakiuchi

    Abstracts Int. Conf. on Silicon Epitaxy and Heterostructures　Vol. 517　No. 1　p. 242-244　2007/05　Research paper (international conference proceedings)

  146. Photoluminescence Study of Defect-Free Epitaxial Silicon Filmes Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition

    K. Yasutake, N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, Y. Fujiwara

    Jpn. J. Appl. Phys.　Vol. 46　No. 4B　p. 2510-2515　2007/04　Research paper (scientific journal)

  147. High-Rate and Low-Temperature Film Growth Technology Using Stable Glow Plasma at Atmospheric Pressure

    H. Kakiuchi, H. Ohmi, K. Yasutake

    Trends in Thin Solid Films Research　2007/03　Research paper (scientific journal)

    Publisher: Nova Science Publishers

  148. Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma

    Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe, Kiyoshi Yasutake

    Appl. Phys. Lett.　Vol. 90　No. 9　2007/02　Research paper (scientific journal)

  149. Characterization of Silicon Carbide Layers Formed by Atmospheric Pressure Plasma Carbonization of Silicon

    H. Kakiuchi, H. Ohmi, R. Nakamura, M. Aketa, K. Yasutake

    Proc. of International Symposium on Dry Process (DPS 2006), 29-30 November 2006,Nagoya, Japan　2006/11　Research paper (international conference proceedings)

  150. 大気圧プラズマによるSi表面の高速酸化

    原田真, 垣内弘章, 大参宏昌, 渡部平司, 安武潔

    薄膜材料デバイス研究会 第3回研究集会予稿集「薄膜デバイスの新展開」pp. 149.-150.　2006/11

  151. High-Rate Deposition and Characterization of Microcrystalline Silicon Films Prepared by Atmospheric Pressure Plasma CVD

    H. Kakiuchi, H. Ohmi, Y. Kuwahara, R. Inuzuka, K. Yasutake

    Proc. of 21st European Photovoltaic Solar Energy Conference and Exhibition, 4-8 September 2006, Dresden, Germany　2006/11

  152. Lifetime measurement of metastable fluorine atoms using electron cyclotron resonance plasma source

    M. Shimizu, H. Ohmi, H. Kakiuchi, K. Yasutake

    J. Vac. Sci. Technol. A　Vol. 24　No. 6　p. 2133-2138　2006/11　Research paper (scientific journal)

  153. atmospheric pressure plasma sterilization with water micro-mist

    Yoshiki Ogiyama, Hiromasa Ohmi, Keiji Iwamoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Proceedings of 6th international symposium on dry process　2006/11　Research paper (international conference proceedings)

  154. High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma

    M. Harada, H. Kakiuchi, H. Ohmi, H. Watanabe, K. Yasutake

    Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

  155. Fabrication of Polycrystalline Thin Films on Glass Substrates Using Ge Nano-Islands and Nuclei

    K. Minami, C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe, K. Yasutake

    Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

  156. Atomospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode

    M. Harada, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake

    Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

  157. Fabrication of Si1-xGex and SiC films by atmospheric pressure plasma enhanced chemical transport

    Kazuya Kishimoto, Daiki Kamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology. pp.73-pp.74　2006/10　Research paper (international conference proceedings)

  158. development of atmospheric pressure plasma enhanced chemical transport toward Eco-friendly manufacturing

    Hiromasa Ohmi, Yoshinori Hamaoka, Yoshiki Ogiyama, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.9-10, Osaka, Japan.　2006/10　Research paper (international conference proceedings)

  159. High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma

    M. Harada, H. Kakiuchi, H. Ohmi, H. Watanabe, K. Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.78-79, Osaka, Japan.　2006/10

  160. Atmospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode

    M. Harada, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.75-76, Osaka, Japan.　2006/10

  161. Fabrication of Polycrystalline Thin Films on Glass Substrates Using Ge Nano-Islands and Nuclei

    K. Minami, C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe, K. Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.65-66, Osaka, Japan.　2006/10

  162. High-Rate Deposition of Microcrystalline Silicon Films at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition

    H. Kakiuchi, H. Ohmi, Y. Kuwahara, R. Inuzuka, K. Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology　2006/10

  163. Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates

    K. Yasutake, H. Watanabe, H. Ohmi, H. Kakiuchi

    ECS Transactions“Thin Film Transistor Technology 8"　Vol. 3　No. 8　p. 215-225　2006/10　Research paper (scientific journal)

  164. Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane

    H. Kakiuchi, H. Ohmi, R. Nakamura, M. Aketa, K. Yasutake

    Jpn. J. Appl. Phys.　Vol. 45　No. 10B　p. 8381-8387　2006/10　Research paper (scientific journal)

  165. Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode

    H. Ohmi, H. Kakiuchi, N. Tawara, T. Wakamiya, T. Shimura, H. Watanabe, K. Yasutake

    Jpn. J. Appl. Phys.　Vol. 45　No. 10　p. 8424-8429　2006/10　Research paper (scientific journal)

  166. Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃)

    N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, Y. Fujiwara, K. Yasutake

    Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095.　2006/09

  167. Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition

    Ohmi Hiromasa, Kakiuchi Hiroaki, Yasutake Kiyoshi, Nakahama Yasuji, Ebata Yusuke, Yoshii Kumayasu, Mori Yuzo

    Jpn J Appl Phys　Vol. 45　No. 4　p. 3581-3586　2006/04/30

    Publisher: INSTITUTE OF PURE AND APPLIED PHYSICS

  168. Surface Cleaning and Etching of 4H-SiC(0001) using Atmospheric Pressure Hydrogen Plasma

    Heiji Watanabe, Shigenari Okada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Materials Research Society (MRS) Spring Meeting, 2006, San Francisco, CA.　2006/04

  169. Characterization of epitaxial Si films grown by atmospheric pressure plasma chemical vapor deposition using cylindrical rotary electrode

    K Yasutake, H Ohmi, H Kakiuchi, T Wakamiya, H Watanabe

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 45　No. 4　p. 3592-3597　2006/04　Research paper (scientific journal)

  170. Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition

    H. Kakiuchi, H. Ohmi, M. Aketa, K. Yasutake, K. Yoshii, Y. Mori

    Thin Solid Films　Vol. 496　No. 2　p. 259-265　2006/02　Research paper (scientific journal)

  171. Deposition Characteristics of Polycrystalline Silicon Carbide Films Prepared at High-Rates by Atmospheric Pressure Plasma CVD

    Hiroaki Kakiuchi, Hiromasa Ohmi, Ryota Nakamura, Masatoshi Aketa, Kiyoshi Yasutake, Kumayasu Yoshii, Yuzo Mori

    Proceedings of the 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing　2006/01

  172. Low-temperature Growth of Epitaxial Silicon films by Atmospheric Pressure Plasma Chemical Vapor Deposition

    Hiromasa Ohmi, Hiroaki Kakiuchi, Naotaka Tawara, Takuya Wakamiya, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

    Proceedings of the 6th ICRP and 23rd SPP　2006/01　Research paper (international conference proceedings)

  173. Characterization of high pressure (200-760Torr), stable glow plasma of pure hydrogen by measuring etching properties of Si and optical emission spectroscopy

    Hiromasa Ohmi, Hiroaki Kakiuchi, Yoshiki Ogiyama, Heiji Watanabe, Kiyoshi Yasutake

    Proceedings of the 6th ICRP and 23rd SPP　2006/01　Research paper (international conference proceedings)

  174. low temperature crystallization of amorphous silicon by atmospheric pressure plasma treatment in H2/He or H2/Ar mixtures

    Hiromasa Ohmi, Hiroaki Kakiuchi, Kenichi Nishijima, Heiji Watanabe, Kiyoshi Yasutake

    Proceedings of the 6th ICRP an 23rd SPP　Vol. 45　No. 10B　p. 8488-8493　2006/01　Research paper (international conference proceedings)

  175. シリコン系薄膜の大気圧プラズマCVDおよびエピタキシャル成長

    安武潔, 垣内弘章, 大参宏昌, 渡部平司

    薄膜材料デバイス研究会第2回研究集会「低温プロセスの再発見」アブストラクト集（2005）　2005/11

  176. Development of ultrahigh-rate deposition technology using atmospheric pressure plasma CVD

    H. Kakiuchi, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori

    2005/06

  177. High-rate deposition of functional thin films by atmospheric pressure plasma CVD

    H. Kakiuchi, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori, Y. Nakahama, Y. Ebata

    2005/06

  178. Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition

    H. Kakiuchi, M. Matsumoto, Y. Ebata, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori

    Journal of Non-Crystalline Solids 351 (2005) 741-747　Vol. 351　No. 8-9　p. 741-747　2005/04　Research paper (scientific journal)

  179. Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

    H. Kakiuchi, Y. Nakahama, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori

    Thin Solid Films 479 (2005) 17-23　Vol. 479　No. 1-2　p. 17-23　2005/04　Research paper (scientific journal)

  180. Formation of MonoChromatic Atomic Beam for Nanofabrication

    Hiromasa Ohmi, Kiyoshi Yasutake, Yuki Matsui, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

    2001/03

  181. High-Rate Growth of Epitaxial Si by Atmospheric Pressure Plasma CVD

    Yuzo Mori, Kumayasu Yoshii, kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi, amd, Katsuo Wada

    2001/03　Research paper (international conference proceedings)

  182. Epitaxial Growth of Si by Atmospheric Pressure Plasma CVD-Growth Rate and Crystallinity-

    Yuzo Mori, Kumayasu Yoshii, kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi, amd, Katsuo Wada

    2001/03　Research paper (international conference proceedings)

  183. Epitaxial Growth of Si by Atmospheric Pressure Plasma CVD-Growth Rate and Crystallinity-

    Yuzo Mori, Kumayasu Yoshii, kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi, amd, Katsuo Wada

    2001/03　Research paper (international conference proceedings)

  184. High-Rate Growth of Epitaxial Si by Atmospheric Pressure Plasma CVD

    Yuzo Mori, Kumayasu Yoshii, kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi, amd, Katsuo Wada

    2001/03　Research paper (international conference proceedings)

  185. Formation of MonoChromatic Atomic Beam for Nanofabrication

    Hiromasa Ohmi, Kiyoshi Yasutake, Yuki Matsui, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

    2001/03

  186. development of anisotropic dry etching method using laser-collimated fluorine radical beam

    Masao Shimizu, Hiromasa Ohmi, Kiyoshi Yasutake, Kazuaki Yamane, Ryo Tanaka, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

    1999/08　Research paper (international conference proceedings)

  187. Creation of mono-velocity neutral atomic beam

    Hiromasa Ohmi, Kiyoshi Yasutake, Masao Shimizu, Takakiyo Yasukawa, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Masataka Umeno, Yuzo Mori

    1999/08　Research paper (international conference proceedings)

  188. Creation of mono-velocity neutral atomic beam

    Hiromasa Ohmi, Kiyoshi Yasutake, Masao Shimizu, Takakiyo Yasukawa, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Masataka Umeno, Yuzo Mori

    1999/08　Research paper (international conference proceedings)

  189. development of anisotropic dry etching method using laser-collimated fluorine radical beam

    Masao Shimizu, Hiromasa Ohmi, Kiyoshi Yasutake, Kazuaki Yamane, Ryo Tanaka, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

    1999/08　Research paper (international conference proceedings)

Misc. 71

  1. High-Rate and Low-Temperature Si Film Growth Technology and its Application for Thin Film Transistors

    Vol. 19　No. 11　p. 23-29　2013/11

    Publisher: テクノタイムズ社

  2. High-rate deposition of silicon films by atmospheric-pressure plasma chemical vapor deposition and its application to Si thin film solar cells

    Vol. 31　No. 6　p. 88-93　2012/06

    Publisher: オプトロニクス社

  3. 大気圧プラズマを用いた低温・高速成膜技術 (特集 プラズマプロセスの応用技術)

    垣内 弘章, 大参 宏昌, 安武 潔

    ケミカルエンジニヤリング　Vol. 55　No. 12　p. 889-895　2010/12

    Publisher: 化学工業社

  4. 大気圧プラズマ化学輸送法による太陽電池用シリコン膜の作製

    大参 宏昌, オオミ ヒロマサ

    大阪大学低温センターだより　Vol. 152　p. 20-26　2010/10

    Publisher: 大阪大学低温センター

  5. PFC-Free Dry Etching Method for Si Using Narrow-Gap VHF Plasma at Subatmospheric Pressure

    Hiromasa Ohmi, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY　Vol. 157　No. 2　p. D85-D89　2010

  6. purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport

    Hiromasa Ohmi, Akihiro Goto, Daiki Kamada, Yoshinori Hamaoka, Hiroaki Kakiuchi, Kiyoshi Yasutake

    Appl. Phys. Lett.　Vol. 95　No. 18　2009/11

  7. フィルムコーテイングのための大気圧・超高周波プラズマ技術 (特集 気相薄膜形成技術)

    垣内 弘章, 大参 宏昌, 安武 潔

    コンバーテック　Vol. 36　No. 3　p. 96-100　2008/03

    Publisher: 加工技術研究会

  8. Low-Temperature Oxidation of Crystalline and Hydrogenated Amorphous Si Using Very High Frequency Plasma at Atmospheric Pressure

    H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007　Vol. pp. 7-8　2007/10

  9. Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process

    H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

    Appl. Phys. Lett.　Vol. 91　No. 16　2007/10

  10. Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process

    Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe, Kiyoshi Yasutake

    APPLIED PHYSICS LETTERS　Vol. 91　No. 16　2007/10

  11. Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar/O2 plasma

    H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

    Appl. Phys. Lett.　Vol. 90　No. 15　2007/04

  12. Formation of Silicon Dioxide Layers at Low Temperatures (150-400 C) by Atmospheric Pressure Plasma Oxidation of Silicon

    H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

    Sci. Technol. Adv. Mater.　Vol. 8　No. 3　p. 137-141　2007/04

  13. Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar/O-2 plasma

    Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe, Kiyoshi Yasutake

    APPLIED PHYSICS LETTERS　Vol. 90　No. 15　2007/04

  14. Formation of silicon dioxide layers at low temperatures (150-400 degrees C) by atmospheric pressure plasma oxidation of silicon

    H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS　Vol. 8　No. 3　p. 137-141　2007/04

  15. Low-Temperature Oxidation of Crystalline and Hydrogenated Amorphous Si Using Very High Frequency Plasma at Atmospheric Pressure

    Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　Vol. pp. 7-8　2007

  16. 大気圧プラズマCVDによる機能薄膜の高速・低温形成技術 (特集1 大気圧プラズマの生成,計測と産業応用)

    垣内 弘章, 大参 宏昌, 安武 潔

    マテリアルステージ　Vol. 5　No. 12　p. 14-20　2006/03

    Publisher: 技術情報協会

  17. Defect-free growth of epitaxial silicon at low temperatures (500-800 degrees C) by atmospheric pressure plasma chemical vapor deposition

    K Yasutake, H Kakiuchi, H Ohmi, K Yoshii, Y Mori

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING　Vol. 81　No. 6　p. 1139-1144　2005/11

  18. Effect of Silane Concentration on Structure of the Poly-Si Films Prepared at High Rates by Atmospheric Pressure Plasma CVD

    H.Ohmi, H. Kakiuchi, Y. Nakahama, Y. Ebata, K. Yasutake, K. Yoshii, Y.Mori

    japanese jounal of precision engineering　Vol. 71, No.11,　No. 11　p. 1393-1398　2005/11

    Publisher: The Japan Society for Precision Engineering

  19. Defect-free growth of epitaxial silicon at low temperatures (500-800 degrees C) by atmospheric pressure plasma chemical vapor deposition

    K Yasutake, H Kakiuchi, H Ohmi, K Yoshii, Y Mori

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING　Vol. 81　No. 6　p. 1139-1144　2005/11

  20. Influence of H2/SiH4 ratio on the deposition rate and morphology of polycrystalline silicon films deposited by atmospheric pressure plasma CVD

    H.Ohmi, H. Kakiuchi, K. Yasutake, Y. Nakahama, Y. Ebata, K. Yoshii, Y.Mori

    Proceedings of the SOLID STATE DEVICES AND MATERIALS, KOBE　Vol. 372-373,　2005/09

  21. High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmoshperis Pressure Plasma CVD

    Takuya Wakamiya, Hiromasa Ohmi, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake, Kumayasu Yoshii, Yuso Mori

    Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials　Vol. 756-757,　2005/09

  22. High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure

    Hiroaki Kakiuchi, Hiromasa Ohmi, Yasuhito Kuwahara, Mitsuhiro Matsumoto, Yusuke Ebata, Kiyoshi Yasutake, Kumayasu Yoshii, Yuzo Mori

    Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials　Vol. 45　No. 4　p. 3587-3591　2005/09

  23. Study of Effects of Metal layer on hydrogen desorption from hydrogenated amorphous silicon using temperature programmed desorption

    Y. Hamaoka, H.Ohmi, H. Kakiuchi, K. Yasutake

    Proceedings of the SOLID STATE DEVICES AND MATERIALS, KOBE　Vol. 760-761,　2005/09

  24. Formation of Crystalline Ge Islands on Glass Substratesfor Growth of Large-Grained Polycrystalline Si Thin Films

    K. Yasutake, H. Watanabe, H. Ohmi, H. Kakiuchi, S. Koyama, D. Nakajima, K. Minami

    Proceedings of Thin Film Materials & Devices Meeting, Nov.12-13, 2004, Nara-Shi Asunara Conference Hall, pp.19-24　Vol. pp.19-24　2005/02

  25. Defect-free growth of epitaxial silicon at low temperatures (500 - 800°C) by atmospheric pressure plasma chemical vapor deposition

    K. Yasutake, H. Kakiuchi, H. Ohmi, K. Yoshii, Y. Mori

    Applied Physics A　Vol. 81　No. 6　p. 1139-1144　2005/02

  26. Formation of Crystalline Ge Islands on Glass Substrates for Growth of Large-Grained Polycrystalline Si Thin Films

    Proceedings of Thin Film Materials & Devices Meeting, Nov.12-13, 2004, Nara-Shi Asunara Conference Hall, pp.19-24　Vol. pp.19-24　2005

  27. Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching

    Kiyoshi YASUTAKE, Hiromasa OHMI, Hiroaki KAKIUCHI, HeijiWATANABE, Kumayasu YOSHII, Yuzo MORI

    Jpn. J. Appl. Phys. Vol.43 (2004) No.12A pp.L1552-L1554　Vol. 43　No. 12A　p. L1552-L1554　2004/12

  28. Size and density control of crystalline Ge islands on glass substrates by oxygen etching

    K Yasutake, H Ohmi, H Kakiuchi, H Watanabe, K Yoshii, Y Mori

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　Vol. 43　No. 12A　p. L1552-L1554　2004/12

  29. 大粒径多結晶Si薄膜作製のためのGe微結晶核を利用した基板表面制御

    小山晋, 中嶋大貴, 南綱介, 大参宏昌, 渡部平司, 安武潔, 森勇藏

    薄膜材料デバイス研究会第１回研究会「TFTのすべて」アブストラクト集(2004) p.36, p.67　Vol. p.36, p.67　2004/11

  30. Study on Crucial Factors for Deposition Rate in the High-rate Deposition Process of Polycrystalline Silicon Films by Atmospheric Pressure Plasma CVD

    Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake, Yasuji Nakahama, Yusuke Ebata, Kumayasu Yoshii, Yuzo Mori

    Journal of the Japan Society for Precision Engineering70 [11] (2004) 1418-1422.　Vol. 70　No. 11　p. 1418-1422　2004/11

    Publisher: The Japan Society for Precision Engineering

  31. High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (2nd Reoprt) --- Improvement of Film Structure by Optimizing the Deposition Parameters ---

    H.Kakiuchi, H.Ohmi, K.Nakazawa, K.Yasutake, K.Yoshii, Y.Mori

    Journal of the Japan Society for Precision Engineering　Vol. 70　No. 8　p. 1075-1079　2004/08

    Publisher: The Japan Society for Precision Engineering

  32. Correlation between Deposition Parameters and Structures of the SiNx Films Deposited at Extremely High Rates by Atmospheric Pressure Plasma CVD

    H.Kakiuchi, Y.Nakahama, H.Ohmi, K.Yasutake, K.Yoshii, Y.Mori

    Journal of the Japan Society for Precision Engineering　Vol. 70　No. 7　p. 956-960　2004/07

    Publisher: The Japan Society for Precision Engineering

  33. Correlation between Performance of the a-Si Solar Cells and Properties of the i-Layers Deposited at Extremely High Rates by Atmospheric Pressure Plasma CVD

    Y.Mori, H.Kakiuchi, K.Yoshii, K.Yasutake, H.Ohmi, Y.Ebata, T.Nakamura, H.Takeuchi, Y.Hojo, K.Furukawa

    Journal of the Japan Society for Precision Engineering, 70, 4, pp.562-567 (2004)　Vol. 70　No. 4　p. 562-567　2004/04

    Publisher: The Japan Society for Precision Engineering

  34. Deposition Characteristics of SiNx Films by Atmospheric Pressure Plasma CVD

    Y.Mori, H.Kakiuchi, H.Ohmi, K.Yoshii, K.Yasutake, Y.Nakahama

    Journal of the Japan Society for Precision Engineering, 70, 2, pp.292-296 (2004)　Vol. 70, No.2, 292-296　No. 2　p. 292-296　2004/02

    Publisher: The Japan Society for Precision Engineering

  35. Correlation between Performances of the a-Si Solar Cells and Properties of the i-Layers Deposited at Extremely High Rates by Atmospheric Pressure Plasma CVD

    MORI Yuzo, KAKIUCHI Hiroaki, YOSHII Kumayasu, YASUTAKE Kiyoshi, OHMI Hiromasa, EBATA Yusuke, NAKAMURA Tsuneo, TAKEUCHI Hiroaki, HOJO Yoshiyuki, FURUKAWA Kazuhiko

    Journal of the Japan Society for Precision Engineering. Supplement. Contributed papers　Vol. 70, 4, pp.562-567　No. 4　p. 562-567　2004

    Publisher: The Japan Society for Precision Engineering

  36. Correlation between Deposition Parameters and Structures of the SiN_x Films Deposited at Extremely High Rates by Atmospheric Pressure Plasma CVD

    KAKIUCHI Hiroaki, NAKAHAMA Yasuji, OHMI Hiromasa, YASUTAKE Kiyoshi, YOSHII Kumayasu, MORI Yuzo

    Journal of the Japan Society for Precision Engineering. Supplement. Contributed papers　Vol. 70　No. 7　p. 956-960　2004

    Publisher: The Japan Society for Precision Engineering

  37. High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (2nd Report) : Improvement of Film Structure by Optimizing the Deposition Parameters

    KAKIUCHI Hiroaki, OHMI Hiromasa, NAKAZAWA Koichi, YASUTAKE Kiyoshi, YOSHII Kumayasu, MORI Yuzo

    Journal of the Japan Society for Precision Engineering. Supplement. Contributed papers　Vol. 70　No. 8　p. 1075-1079　2004

    Publisher: The Japan Society for Precision Engineering

  38. 大気圧プラズマＣＶＤ法による機能薄膜の超高速成形成技術の開発

    垣内弘章, 大参宏昌, 安武 潔, 芳井熊安, 遠藤勝義, 森 勇藏

    大阪大学低温センターだより，125,16-22　Vol. 125,16-22　p. 16-22　2004/01

    Publisher: 大阪大学低温センター

  39. “Formation of Crystalline Ge Islands on Glass Substrates for Growth of Large-Grained Polycrystalline Si Thin Films

    Proceedings of Thin Film Materials & Devices Meeting, Nara-Shi Asunara Conference Hall,　Vol. 19-24　2004

  40. Study on the Crucial Factors for Deposition Rate in the High-rate Deposition Process of Polycrystalline Silicon Films by Atmospheric Pressure Plasma CVD

    OHMI Hiromasa, KAKIUCHI Hiroaki, YASUTAKE Kiyoshi, NAKAHAMA Yasuji, EBATA Yusuke, YOSHII Kumayasu, MORI Yuzo

    Journal of the Japan Society for Precision Engineering. Supplement. Contributed papers　Vol. 70, No.11, 1418-1422.　No. 11　p. 1418-1422　2004

    Publisher: The Japan Society for Precision Engineering

  41. Correlation between Performances of the a-Si Solar Cells and Properties of the i-Layers Deposited at Extremely High Rates by Atmospheric Pressure Plasma CVD

    MORI Yuzo, KAKIUCHI Hiroaki, YOSHII Kumayasu, YASUTAKE Kiyoshi, OHMI Hiromasa, EBATA Yusuke, NAKAMURA Tsuneo, TAKEUCHI Hiroaki, HOJO Yoshiyuki, FURUKAWA Kazuhiko

    Journal of the Japan Society for Precision Engineering. Supplement. Contributed papers　Vol. 70, No.4, 562-567　No. 4　p. 562-567　2004

    Publisher: The Japan Society for Precision Engineering

  42. ｢大気圧プラズマCVD法により高速形成したSiNx薄膜の構造と成膜パラメータの相関」

    精密工学会誌　Vol. 70, No.7, 956-960.　2004

  43. ｢大気圧プラズマCVD法によるアモルファスSiCの高速成膜に関する研究（第２報）－成膜パラメータの最適化による膜構造の改善－」

    精密工学会誌　Vol. 70, No.8, 1075-1079.　2004

  44. Characterization of Polycrystalline Silicon Films Fabricated by Atmospheric Pressure Plasma CVD with Rotary Electrode

    Y.Mori, K.Yoshii, K.Yasutake, H.Kakiuchi, H.Ohmi, Y.Nakahama, Y.Ebata

    Journal of the Japan Society for Precision Engineering, 70, 1, pp.144-148 (2004)　Vol. 70　No. 1　p. 144-148　2004/01

    Publisher: The Japan Society for Precision Engineering

  45. Characterization of Hydrogenated Amorphous Si1-xCx Films Prepared at Extremely High Rates Using Very High Frequency Plasma at Atmospheric Pressure

    Y. Mori, H. Kakiuchi, K. Yoshii, K. Yasutake, H. Ohmi

    Journal of Physics D: Applied Physics　Vol. 36　No. 23　p. 3057-3063　2003/12

  46. High-Rate Growth of Epitaxial Silicon at Low Temperatures (530-690℃) by Atmospheric Pressure Plasma Chemical Vapor Deposition

    Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, H. Ohmi, K. Wada

    Thin Solid Films, 444 (2003) 138-145.　Vol. 444　No. 1-2　p. 138-145　2003/12

  47. First-principles molecular-dynamics study on initial processes of CVD epitaxial Si growth

    Yasutake K., Inagaki K., Kakiuchi H., Ohmi H., Yoshii K., Hirose K.

    Meeting abstracts of the Physical Society of Japan　Vol. 58　No. 2　p. 792-792　2003/08/15

    Publisher: The Physical Society of Japan (JPS)

  48. Low-Temperature Growth of Epitaxial Si at High Rates by Atmospheric Pressure Plasma CVD (1st Report)

    Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, H. Ohmi, K. Wada

    Journal of the Japan Society for Presicion Engineering　Vol. 69　No. 6　p. 861-865　2003/06

    Publisher: The Japan Society for Precision Engineering

  49. 大気圧プラズマCVD法によるSiNx薄膜の高速形成に関する研究 : NH_3/SiH_4比の最適化

    森 勇蔵, 芳井 熊安, 安武 潔, 垣内 弘章, 大参 宏昌, 山本 達志, 中濱 康冶

    精密工学会大会学術講演会講演論文集　Vol. 2002　No. 2　p. 370-370　2002/10/01

  50. 大気圧プラズマCVDによるSiの低温・高速エピタキシャル成長(第3報) : 成膜速度と温度の関係

    森 勇蔵, 芳井 熊安, 安武 潔, 垣内 弘章, 大参 宏昌, 和田 勝男

    精密工学会大会学術講演会講演論文集　Vol. 2002　No. 2　p. 369-369　2002/10/01

  51. 大気圧プラズマCVDによるSiの低温・高速エピタキシャル成長(第2報):成膜温度と投入電力が結晶性に及ぼす影響

    森 勇蔵, 芳井 熊安, 安武 潔, 垣内 弘章, 大参 宏昌, 和田 勝男

    精密工学会大会学術講演会講演論文集　Vol. 2002　No. 1　p. 614-614　2002/03/01

  52. ナノ構造作製へ向けた単色原子ビームの生成

    松井 優貴, 安武 潔, 大参 宏昌, 垣内 弘章, 竹内 昭博, 芳井 熊安, 森 勇蔵

    精密工学会大会学術講演会講演論文集　Vol. 2001　No. 2　p. 211-211　2001/09/01

  53. 大気圧プラズマCVDによるSiの高速エピタキシャルの成長

    森 勇蔵, 芳井 熊安, 安武 潔, 垣内 弘章, 大参 宏昌, 和田 勝男

    精密工学会大会学術講演会講演論文集　Vol. 2001　No. 2　p. 249-249　2001/09/01

  54. Amplification of Dye Laser by Injection Seeding

    OHMI Hiromasa, YASUTAKE Kiyoshi, MATSUI Yuki, TAKEUCHI Akihiro, KAKIUCHI Hiroaki, YOSHII Kumayasu, MORI Yuzo

    Journal of the Japan Society of Precision Engineering　Vol. 67　No. 7　p. 1108-1113　2001/07

    Publisher: The Japan Society for Precision Engineering

  55. Dual mode amplification of dye laser by injection-seeding method

    H. Ohmi, K. Yasutake, Y. Matsui, A. Takeuchi, H. Kakiuchi, K. Yoshii, Y. Mori

    CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST　Vol. 2　p. 124-125　2001/07

  56. Laser collimation of Li atomic beam

    Hiromasa Ohmi, Kiyoshi Yasutake, Masao Shimizu, Hiroaki Kakiuchi, Akihiro Takeuchi, Kumayasu Yoshii, Yuzo Mori

    Journal of the Japan Society of Precision Engineering　Vol. 67　No. 3　p. 433-437　2001/03

    Publisher: The Japan Society for Precision Engineering

  57. Dual mode amplification of dye laser by injection-seeding method

    H Ohmi, K Yasutake, Y Matsui, A Takeuchi, H Kakiuchi, K Yoshii, Y Mori

    CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST　Vol. 2, 124-125　p. 124-125　2001

  58. Lifetime of metastable fluorine atoms

    M Shimizu, K Yasutake, H Ohmi, A Takeuchi, H Kakiuchi, K Yoshii, Y Mori

    APPLIED PHYSICS B-LASERS AND OPTICS　Vol. 72　No. 2　p. 227-230　2001/01

  59. Lifetime of Metastable Fluorine atoms

    Masao Shimizu, Kiyoshi Yasutake, Hiromasa Ohmi, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

    Applied Physics B　Vol. 72, 227-230　2001/01

  60. Amplification of Dye Laser by Injection Seeding.

    Hiromasa OHMI, Kiyoshi YASUTAKE, Yuki MATSUI, Akihiro TAKEUCHI, Hiroaki KAKIUCHI, Kumayasu YOSHII, Yuzo MORI

    Jounal of the japan society for precision engineering　Vol. 67　No. 7　p. 1108-1113　2001

    Publisher: The Japan Society for Precision Engineering

  61. Laser collination of Li atomic beam.

    Hiromasa OHMI, Kiyoshi YASUTAKE, Masao SHIMIZU, Hiroaki KAKIUCHI, Akihiro TAKEUCHI, Kumayasu YOSHII, Yuzo MORI

    Jounal of the japan society for precision engineering　Vol. 67　No. 3　p. 433-437　2001

    Publisher: The Japan Society for Precision Engineering

  62. Velocity spectrometer for a neutral atomic beam

    K Yasutake, H Ohmi, M Shimizu, A Takeuchi, H Kakiuchi, K Yoshii, Y Mori

    APPLIED PHYSICS B-LASERS AND OPTICS　Vol. 71　No. 6　p. 787-793　2000/12

  63. Development of Velocity Spectrometer for Neutral Atomic Beam

    OHMI Hiromasa, YASUTAKE Kiyoshi, SHIMIZU Masao, KAKIUCHI Hiroaki, TAKEUCHI Akihiro, YOSHII Kumayasu, MORI Yuzo

    Journal of the Japan Society of Precision Engineering　Vol. 66　No. 12　p. 1938-1942　2000/12

    Publisher: The Japan Society for Precision Engineering

  64. Velocity Spectrometer for neutral atomic beam

    Kiyoshi Yasutake, Hiromasa Ohmi, Masao Shimizu, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

    APPLIED PHYSICS B-LASERS AND OPTICS　Vol. 71　No. 6　p. 787-793　2000/12

  65. レーザー冷却法を用いた異方性ドライエッチングプロセスの開発 : フッ素ラジカルの生成と準安定状態の寿命測定

    清水 正男, 安武 潔, 大参 宏昌, 田中 亮, 村上 健, 竹内 昭博, 垣内 弘章, 芳井 熊安, 森 勇蔵

    精密工学会大会学術講演会講演論文集　Vol. 2000　No. 2　p. 480-480　2000/09/01

  66. 原子光学用レーザーの周波数安定化と光の増幅

    大参 宏昌, 松井 優貴, 安武 潔, 垣内 弘章, 竹内 昭博, 芳井 熊安, 森 勇藏, 清水 正男

    精密工学会大会学術講演会講演論文集　Vol. 2000　No. 1　p. 380-380　2000/03/01

  67. 単色Li原子ビームの生成とナノリソグラフィーへの応用

    大参 宏昌, 安川 貴清, 安武 潔, 垣内 弘章, 竹内 昭博, 芳井 熊安, 森 勇藏, 清水 正男

    精密工学会大会学術講演会講演論文集　Vol. 2000　No. 1　p. 379-379　2000/03/01

  68. development of velocvity spectrometer for neutral atomic beam

    Jounal of the japan society for precision engineering　Vol. 66　No. 12 1938-1942　2000

  69. レーザー冷却法を用いた異方性ドライエッチングプロセスの開発

    清水 正男, 岩井 敬文, 大参 宏昌, 竹内 昭博, 垣内 弘章, 安武 潔, 芳井 熊安, 森 勇藏

    精密工学会大会学術講演会講演論文集　Vol. 1998　No. 1　p. 521-521　1998/03/05

  70. 中性原子ビームのコリメーションとナノファブリケーションへの応用

    大参宏昌

    1998年度精密工学会関西地方定期学術講演会講演論文集　Vol. 125　1998

  71. レーザー冷却法による中性原子ビームのコリメーション

    大参 宏昌, 安武 潔, 垣内 弘章, 竹内 昭博, 芳井 熊安, 森 勇蔵, 清水 正男

    精密工学会大会学術講演会講演論文集　Vol. 1997　No. 2　p. 111-111　1997/10/01

Publications 12

  1. 超精密加工と表面科学 第2部2章3

    大参宏昌

    大阪大学出版会　2014/03　Scholarly book

    ISBN: 9784872594652

  2. Monthly DISPLAY

    2013/11　Other

  3. 大気圧プラズマCVDによるSi高速成膜と太陽電池への応用 OPTRONICS, 2012, No. 6, 88-93. （共著）

    垣内弘章, 大参宏昌, 安武潔

    株式会社オプトロニクス社　2012/06　Scholarly book

  4. 大気圧プラズマCVDによるシリコン薄膜の形成 「改訂版 大気圧プラズマの生成制御と応用技術」 pp.197-219, 2012 （共著）

    安武潔, 垣内弘章, 大参宏昌

    サイエンス＆テクノロジー株式会社　2012/03　Scholarly book

    ISBN: 9784864280396

  5. 大気圧プラズマの技術とプロセス開発

    沖野, 晃俊

    シーエムシー出版　2011/08　Other

    ISBN: 9784781304076

  6. Preparation of Si-Based Thin Films Using Atmospheric Pressure Plasma Chemical Vapour Deposition (CVD) （共著）

    K. Yasutake, H. Kakiuchi, H. Ohmi

    "Generation and Application of Atmospheric Pressure Plasmas" NOVA　2011/04　Scholarly book

  7. Low-temperature and high-rate film growth technology using atmospheric-pressure plasma

    Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake

    2010/12　Scholarly book

  8. 「大気圧プラズマ 基礎と応用」 第6章6.7.3[2] シリコン系CVD

    安武 潔, 垣内弘章, 大参宏昌

    オーム社　2009/10　Scholarly book

  9. New Coating Technologies

    H. Kakiuchi, H. Ohmi, K. Yasutake

    CTI　2009/10　Scholarly book

  10. The Latest element Technology of Film Based Electronic

    H. Kakiuchi, H. Ohmi, K. Yasutake

    CMC　2008/10　Scholarly book

  11. Materials Science Research Trends

    H. Kakiuchi, H. Ohmi, K. Yasutake

    Nova Science Publishers, New York　2008/10　Scholarly book

  12. 「大気圧プラズマの生成制御と応用技術」 第2章 第7節 大気圧プラズマCVDによる無機物膜堆積 (2006) pp.135-151.

    安武潔, 垣内弘章, 大参宏昌

    サイエンス＆テクノロジー　2006/11　Scholarly book

Works 5

  1. グローバルCOE 高機能化原子制御製造プロセス教育研究拠点

    2008 -

  2. Center of Excellence for Atomically Controlled Fabrication Technology

    2008 -

  3. 大気圧水素プラズマのみによるSi薄膜の形成

    2004 -

  4. ガラス基板表面の核形成点制御による大粒径多結晶薄膜形成法の開発

    2004 -

  5. 原子論的生産技術の創出拠点

    2004 -

Industrial Property Rights 28

  1. ガス生成方法およびエッチング装置

    大参 宏昌, 安武 潔, 酒井 伊都子, 林 久貴, 福原 成太, 大内 淳子, 金高 秀海

    特許7253729

    出願日:2018/10/01

    登録日:2023/03/30

  2. プラズマ処理装置及びプラズマ処理方法，ガス発生装置及びガス発生方法， 並びに，フッ素含有高分子廃棄物処理方法

    大参宏昌, 安武潔, 垣内弘章

    5028617

    出願日:2007/01

    登録日:2012/07

  3. purification method and its equipment for Si and manufacturing equipment for purified Si

    hiromasa Ohmi, Kiyoshi Yasutake

    4660715

    出願日:2008/06

    登録日:2011/01

  4. エピタキシャルSi膜の製造方法およびプラズマ処理装置

    大参宏昌, 安武潔, 垣内弘章, 渡部平司

    特許4539985

    出願日:2005/11

    登録日:2010/07/02

  5. プラズマ生成装置

    大参宏昌, 中塚宏学

    出願日:2022/03/24

  6. エッチング装置及びエッチング方法

    大参 宏昌, 久保田 雄介

    出願日:2016/11/10

  7. 金属膜形成装置及び金属膜形成方法

    大参 宏昌, 安武 潔, 久保田 雄介

    出願日:2016/11/10

  8. mono silane generator

    Hiromasa Ohmi

    出願日:2014/03

  9. deposition method and deposition apparatus

    Ohmi Hiromasa

    出願日:2013/10

  10. 成膜装置

    柴田 哲司, 平井 孝彦, 安武 潔, 垣内 弘章, 大参 宏昌

    特許第5849218号

    出願日:2011/06/14

  11. プラズマエッチング方法、およびプラズマエッチング装置

    中濱康治, 舩木毅, 大参宏昌, 安武潔

    出願日:2009/06

  12. モノシラン生成装置およびモノシラン生成方法

    舩木毅, 中濱康治, 大参宏昌, 安武潔

    出願日:2009/06

  13. manufacturing method for selective growth of thin film

    Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi

    出願日:2007/08

  14. プラズマ加工装置及びプラズマ加工法

    大参宏昌, 安武潔

    出願日:2008/09

  15. 膜製造方法

    大参宏昌, 安武潔

    出願日:2008/08

  16. Si精製方法、Si精製装置及びSi精製膜製造装置

    大参 宏昌, 安武 潔, 中濱 康治, 舩木 毅

    特許第4660715号

    出願日:2008/06/18

  17. 低屈折率SiO2反射防止膜の製造方法及びそれを用いて得られる反射防止処理基材

    垣内弘章, 安武 潔, 大参宏昌, 石岡宗悟, 畠山宏毅

    出願日:2008/06

  18. Crystalline SiC Formation Method by Carbonization of Si Surface and Crystalline SiC Substrates

    H. Kakiuchi, H. Ohmi, K. Yasutake

    特願2005-329318

    出願日:2005/11

  19. プラズマ処理装置及びプラズマ処理方法、並びに、フッ素含有高分子廃棄物処理方法

    大参 宏昌, 安武 潔, 垣内 弘章

    特許第5028617号

    出願日:2007/01/18

  20. プラズマ表面処理装置

    大参宏昌, 安武潔, 垣内弘章

    出願日:2006/11

  21. 大気圧水素プラズマを用いた膜製造方法、精製膜製造方法及び装置

    大参 宏昌, 安武 潔, 垣内 弘章

    出願日:2006/09/08

  22. 大気圧水素プラズマを用いた膜製造法，精製膜製造方法及び装置

    大参宏昌, 安武潔, 垣内弘章

    出願日:2006/09

  23. 原子線分光装置

    芳井熊安, 安武潔, 大参宏昌, 菅原菜穂子, 高林博文, 鬼頭弘

    特開2001-68054

    出願日:1999/11

  24. フルオロカーボン膜の成膜方法及び成膜装置

    大参宏昌, 田中智之, 安武潔

    出願日:2018/10

  25. プラズマ加工装置及びプラズマ加工法

    中濱康治, 舩木毅, 大参宏昌, 安武潔

    出願日:2008/09

  26. 大気圧水素プラズマを用いた膜製造方法、精製膜製造方法及び装置

    大参宏昌, 安武潔, 垣内弘章

    特許第5269414号

    出願日:2006/09

  27. Deposition method and apparatus for functional films by using the atmospheric pressure hydrogen plasma

    H.Ohmi

    出願日:2005/10

  28. Spectrometer for atomic beam

Social Activities 1

  • 大阪大学 新技術説明会

    JST、国立大学法人大阪大学

    2024/01/31 - 2024/01/31

Media Coverage 2

  1. 金属／金属間、金属／樹脂間の新たな接合技術を開発

    (株)ガスレビュー

    2024/06

  2. プラズマ殺菌吹き付け式装置開発

    日経産業新聞

    2007/04

Academic Activities 8

  1. PV JAPAN 2014

    JPEA

    2014/07 -

  2. 大阪大学 新技術説明会

    JST・大阪大学

    2014/07 -

  3. PV JAPAN 2012

    SEMI

    2012/12 -

  4. PV JAPAN 2011

    SEMI

    2011/12 -

  5. イノベーション ジャパン 2010

    JST/NEDO

    2010/09 -

  6. イノベーションジャパン2007

    JST・NEDO

    2007/09 -

  7. セミコンジャパン2006

    2006/12 -

  8. イノベーションジャパン2006

    2006/09 -

Institutional Repository 4

Content Published in the University of Osaka Institutional Repository (OUKA)

  1. Shallow defect layer formation as Cu gettering layer of ultra-thin Si chips using moderate-pressure (3.3 kPa) hydrogen plasma

    Nomura Toshimitsu, Kakiuchi Hiroaki, Ohmi Hiromasa

    Journal of Applied Physics　Vol. 133　No. 16　2023/04/28

  2. 大気圧プラズマ化学輸送法による太陽電池用シリコン膜の作製

    大参 宏昌

    大阪大学低温センターだより　Vol. 152　p. 20-26　2010/10

  3. 大気圧プラズマCVD法による機能薄膜の超高速形成技術の開発

    垣内 弘章, 大参 宏昌, 安武 潔, 芳井 熊安, 遠藤 勝義, 森 勇蔵

    大阪大学低温センターだより　Vol. 125　p. 16-22　2004/01

  4. 中性原子ビーム操作技術と単色原子ビームの生成に関する研究

    大参 宏昌