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Tanikawa Tomoyuki

谷川 智之

Associate Professor

keyword Solar cell,LD,LED,InGaN,MOVPE,Nitride semiconductor

Education

  • - 2012/03/26, Nagoya University, Graduate School, Division of Engineering, Department of Electrical Engineering and Computer Science
  • - 2009/03/25, Nagoya University, Graduate School, Division of Engineering, Department of Electrical Engineering and Computer Science
  • - 2007/03/25, Nagoya University, Faculty of Engineering, Department of electrical and Electronic Engineering and Information Engineering

Research History

  • 2017/01 - 2019/03, Tohoku University, Institute for Materials Research, Senior Assistant Professor
  • 2012/03 - 2016/12, Tohoku University, Institute for Materials Research, Assistant Professor
  • 2010/04 - 2012/03, Japan Society for the Promotion of Science

Research Areas

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering
  • Nanotechnology/Materials, Crystal engineering
  • Nanotechnology/Materials, Applied materials

Professional Memberships

  • ワイドギャップ半導体学会
  • 応用物理学会結晶工学分科会
  • The Japanese Association for Crystal Growth
  • The Japan Society of Applied Physics

Papers

  • Nondestructive characterization of threading dislocations in graded buffer layers of inverted metamorphic solar cells by two-photon excitation spectroscopy, Akio Ogura,Tomoyuki Tanikawa,Tatsuya Takamoto,Ryuji Oshima,Takeyoshi Sugaya,Mitsuru Imaizumi, Applied Physics Express, IOP Publishing, Vol. 14, No. 11, p. 111002-111002, 2021/11/01
  • Monolithic microcavity second harmonic generation device using low birefringence paraelectric material without polarity-inverted structure, Tomoaki Nambu,Takumi Nagata,Soshi Umeda,Keishi Shiomi,Yasufumi FUJIWARA,TOSHIKI HIKOSAKA,Abdul Mannan,Filchito Renee G. Bagsican,Kazunori Serita,Iwao Kawayama,Masayoshi TONOUCHI,Masahiro Uemukai,Tomoyuki TANIKAWA,Ryuji KATAYAMA, Applied Physics Express, IOP Publishing, Vol. 14, No. 6, p. 061004-061004, 2021/05/10
  • Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping, Mayuko Tsukakoshi,Tomoyuki Tanikawa,Takumi Yamada,Masayuki Imanishi,Yusuke Mori,Masahiro Uemukai,Ryuji Katayama, Applied Physics Express, IOP Publishing, Vol. 14, No. 5, p. 055504-1-055504-4, 2021/04/23
  • Observation of Dislocations in Graded Buffer Layers of IMM Single Junction InGaAs Solar Cells by Two-Photon Excitation Photoluminescence, Akio Ogura,Tomoyuki Tanikawa,Tatsuya Takamoto,Ryuji Oshima,Hidetoshi Suzuki,Mitsuru Imaizumi,Takeyoshi Sugaya, Conference Record of the IEEE Photovoltaic Specialists Conference, p. 273-276, 2019/06
  • Reuse of scalmgo<inf>4</inf> substrates utilized for halide vapor phase epitaxy of gan, Kazuki Ohnishi,Shigeyuki Kuboya,Tomoyuki Tanikawa,Takuya Iwabuchi,Kazuya Yamamura,Noriyuki Hasuike,Hiroshi Harima,Tsuguo Fukuda,Takashi Matsuoka, Japanese Journal of Applied Physics, Vol. 58, No. SC, 2019
  • Growth of GaN and improvement of lattice curvature using symmetric hexagonal SiO<inf>2</inf> patterns in HVPE growth, Satoru Fujimoto,Hideyuki Itakura,Tomoyuki Tanikawa,Narihito Okada,Kazuyuki Tadatomo, Japanese Journal of Applied Physics, Vol. 58, No. SC, 2019
  • Reverse-bias-induced virtual gate phenomenon in N-polar GaN HEMTs, T. Suemitsu,K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Matsuoka, 2018 MRS Fall Meeting & Exhibit, Boston, MA, USA, Nov. 25-30, 2018/12
  • N-polar GaN/AlGaN inversed high electron mobility transistors, T. Suemitsu,K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Matsuoka, 4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4), Sendai, Japan, Nov. 19-20, 2018/11
  • Three dimensional and non-destructive investigation of relation between reverse leakage current and threading dislocation in vertical GaN Schottky barrier diodes, T. Fujita,T. Tanikawa,H. Fukushima,S. Usami,A. Tanaka,T. Suemitsu,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, Nov. 12-16, 2018/11
  • Reverse bias annealing in N-polar GaN MIS-HEMTs, T. Suemitsu,K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Matsuoka, 79th JSAP Fall Meeting, Nagoya, Sep. 18-21, 2018, 2018/09
  • Temperature-dependent radiative and non-radiative dynamics of photo-excited carriers in extremely high-density and small InGaN nanodisks fabricated by neutral-beam etching using bio-nano-templates, Yafeng Chen,Takayuki Kiba,Junichi Takayama,Akio Higo,Tomoyuki Tanikawa,Shula Chen,Seiji Samukawa,Akihiro Murayama, Journal of Applied Physics, Vol. 123, No. 20, 2018/05/28
  • Reverse bias annealing effects in N-polar GaN/AlGaN/GaN HEMTs, T. Suemitsu,K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Matsuoka, Compound Semiconductor Week, Boston, MA, USA, May 29-Jun. 1, 2018, p. 705-706, 2018/05
  • Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells, Kengo Takamiya,Shuhei Yagi,Hiroyuki Yaguchi,Hidefumi Akiyama,Kanako Shojiki,Tomoyuki Tanikawa,Ryuji Katayama, Physica Status Solidi (B) Basic Research, WILEY-V C H VERLAG GMBH, Vol. 255, No. 5, 2018/05
  • Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence, Tomoyuki Tanikawa,Kazuki Ohnishi,Masaya Kanoh,Takashi Mukai,Takashi Matsuoka, Applied Physics Express, Japan Society of Applied Physics, Vol. 11, No. 3, 2018/03
  • Halide vapor phase epitaxy of thick GaN films on ScAlMgO<inf>4</inf> substrates and their self-separation for fabricating freestanding wafers, Kazuki Ohnishi,Masaya Kanoh,Tomoyuki Tanikawa,Shigeyuki Kuboya,Takashi Mukai,Takashi Matsuoka, Applied Physics Express, Japan Society of Applied Physics, Vol. 10, No. 10, 2017/10
  • Threshold voltage engineering of recessed MIS-gate N-polar GaN HEMTs, K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Suemitsu,T. Matsuoka, 78th JSAP Fall Meeting, Fukuoka, Sep. 5-8, 2017/09/07
  • Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO<inf>4</inf> (0001) substrate with millimeter-scale wide terraces, Takuya Iwabuchi,Shigeyuki Kuboya,Tomoyuki Tanikawa,Takashi Hanada,Ryuji Katayama,Tsuguo Fukuda,Takashi Matsuoka, Physica Status Solidi (A) Applications and Materials Science, WILEY-V C H VERLAG GMBH, Vol. 214, No. 9, 2017/09
  • Control of impurity concentration in N-polar (0001¯) GaN grown by metalorganic vapor phase epitaxy, Tomoyuki Tanikawa,Shigeyuki Kuboya,Takashi Matsuoka, Physica Status Solidi (B) Basic Research, WILEY-V C H VERLAG GMBH, Vol. 254, No. 8, 2017/08
  • Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations, Tomoyuki Tanikawa,Kanako Shojiki,Ryuji Katayama,Shigeyuki Kuboya,Takashi Matsuoka,Yoshio Honda,Hiroshi Amano, Applied Physics Express, IOP PUBLISHING LTD, Vol. 10, No. 8, 2017/08
  • Optical Study of Sub-10 nm In<inf>0.3</inf>Ga<inf>0.7</inf>N Quantum Nanodisks in GaN Nanopillars, Akio Higo,Takayuki Kiba,Shula Chen,Yafeng Chen,Tomoyuki Tanikawa,Cedric Thomas,Chang Yong Lee,Yi Chun Lai,Takuya Ozaki,Junichi Takayama,Ichiro Yamashita,Akihiro Murayama,Seiji Samukawa, ACS Photonics, AMER CHEMICAL SOC, Vol. 4, No. 7, p. 1851-1857, 2017/07/19
  • N-polar GaN MIS-HEMTs with flat interface grown by optimized MOVPE, K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Suemitsu,T. Matsuoka, IEICE Technical Report, Vol. 117, No. 58, p. 59-64, 2017/05/26
  • Reduced gate leakage current in N-polar GaN MIS-HEMTs, K. Prasertsuk,A. Miura,S. Tanaka,T. Tanikawa,T. Kimura,S. Kuboya,T. Suemitsu,T. Matsuoka, 64th JSAP Spring Meeting, Yokohama, Mar 14-17, 2017/03/15
  • Nanometer scale fabrication and optical response of InGaN/GaN quantum disks, Yi Chun Lai,Akio Higo,Takayuki Kiba,Cedric Thomas,Shula Chen,Chang Yong Lee,Tomoyuki Tanikawa,Shigeyuki Kuboya,Ryuji Katayama,Kanako Shojiki,Junichi Takayama,Ichiro Yamashita,Akihiro Murayama,Gou Chung Chi,Peichen Yu,Seiji Samukawa, Nanotechnology, IOP PUBLISHING LTD, Vol. 27, No. 42, p. 425401_1-425401_5, 2016/09/15
  • MOVPE growth of N-polar GaN/Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN heterostructure on small off-cut substrate for flat interface, K. Prasertsuk,S. Tanaka,T. Tanikawa,K. Shojiki,T. Kimura,A. Miura,R. Nonoda,F. Hemmi,S. Kuboya,R. Katayama,T. Suemitsu,T. Matsuoka, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, IEEE, 2016/08/01
  • Homogeneity improvement of N-polar (000-1) InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane, Kanako Shojiki,Takashi Hanada,Tomoyuki Tanikawa,Yasuhiko Imai,Shigeru Kimura,Ryohei Nonoda,Shigeyuki Kuboya,Ryuji Katayama,Takashi Matsuoka, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 55, No. 5, 2016/05
  • Large Stokes-like shift in N-polar (000-1) InGaN/GaN multiple-quantum-well light-emitting diodes, Tomoyuki Tanikawa,Kanako Shojiki,Shigeyuki Kuboya,Ryuji Katayama,Takashi Matsuoka, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 55, No. 5, p. 05FJ03_1-05FJ03_4, 2016/05
  • Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000-1) p-type GaN grown by metalorganic vapor phase epitaxy, Ryohei Nonoda,Kanako Shojiki,Tomoyuki Tanikawa,Shigeyuki Kuboya,Ryuji Katayama,Takashi Matsuoka, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 55, No. 5, p. 05FE01_1-05FE01_4, 2016/05
  • Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy, Jinyeop Yoo,Kanako Shojiki,Tomoyuki Tanikawa,Shigeyuki Kuboya,Takashi Hanada,Ryuji Katayama,Takashi Matsuoka, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 55, No. 5, p. 05FA04_1-05FA04_5, 2016/05
  • Homogeneity Improvement of N-polar (0001(_)) InGaN/GaN Multiple Quantum Wells by Changing Substrate OfHomogeneity Improvement of N-polar (0001(_)) InGaN/GaN Multiple Quantum Wells by Changing Substrate Off-Cut-Angle Direction, K. Shojiki,T. Hanada,T. Tanikawa,Y. Imai,S. Kimura,R. Nonoda,S. Kuboya,R. Katayama,T. Matsuoka, Jpn. J. Appl. Phys., Vol. 55, No. 5S, p. 05FA09-1-05FA09-8, 2016/04
  • Electrical characteristics of N-polar (0001) p-type GaN Schottky contacts, Toshichika Aoki,Tomoyuki Tanikawa,Ryuji Katayama,Takashi Matsuoka,Kenji Shiojima, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 55, No. 4, p. 05FE01_1-05FE01_4, 2016/04
  • InGaN quantum nanodisks fabrication by bio-template and neutral beam etching, Y.C. Lai,A. Higo,C. Thomas,C.Y. Lee,T. Tanikawa,K. Shojiki,S. Kuboya,R. Katayama,T. Kiba,I. Yamashita,A. Murayama,P. Yu,S. Samukawa, AVS 62nd International symposium and exhibition, 2015/10/23
  • Suppression of metastable-phase inclusion in N-polar (000 1¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy, Kanako Shojiki,Jung Hun Choi,Takuya Iwabuchi,Noritaka Usami,Tomoyuki Tanikawa,Shigeyuki Kuboya,Takashi Hanada,Ryuji Katayama,Takashi Matsuoka, Applied Physics Letters, AMER INST PHYSICS, Vol. 106, No. 22, p. 222102_1-222102_4, 2015/06/01
  • Red to blue wavelength emission of N-polar (0001¯) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy, Kanako Shojiki,Tomoyuki Tanikawa,Jung Hun Choi,Shigeyuki Kuboya,Takashi Hanada,Ryuji Katayama,Takashi Matsuoka, Applied Physics Express, IOP PUBLISHING LTD, Vol. 8, No. 6, p. 061005_1-061005_4, 2015/06/01
  • Optically pumped lasing properties of (1101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates, Maki Kushimoto,Tomoyuki Tanikawa,Yoshio Honda,Hiroshi Amano, Applied Physics Express, IOP PUBLISHING LTD, Vol. 8, No. 2, p. 022702-022702_3, 2015/02/01
  • Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process, Yi Chun Lee,Akio Higo,Chang Yong Lee,Cedric Thomas,Tomoyuki Tanikawa,Kanako Shojiki,Shigeyuki Kuboya,Ryuji Katayama,Takayuki Kiba,Peichen Yu,Ichiro Yamashita,Akihiro Murayama,Seiji Samukawa, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, IEEE, p. 1278-1281, 2015
  • Effect of sapphire nitridation and group-iii source flow rate ratio on in-incorporation into InGaN grown by metalorganic vapor phase epitaxy, J. H. Choi,K. Shojiki,T. Tanikawa,T. Hanada,R. Katayama,T. Matsuoka, Journal of Nanoscience and Nanotechnology, American Scientific Publishers, Vol. 14, No. 8, p. 6112-6115, 2014/08
  • Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth, Takashi Aisaka,Tomoyuki Tanikawa,Takeshi Kimura,Kanako Shojiki,Takashi Hanada,Ryuji Katayama,Takashi Matsuoka, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 53, No. 8, p. 085501_1-085501_4, 2014/08
  • Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (0001) GaN/sapphire, Tomoyuki Tanikawa,Kanako Shojiki,Takashi Aisaka,Takeshi Kimura,Shigeyuki Kuboya,Takashi Hanada,Ryuji Katayama,Takashi Matsuoka, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 53, No. 5 SPEC. ISSUE 1, p. 05FL05-1-05FL05-4, 2014/05
  • Effect of c-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN, Kanako Shojiki,Jung Hun Choi,Hirofumi Shindo,Takeshi Kimura,Tomoyuki Tanikawa,Takashi Hanada,Ryuji Katayama,Takashi Matsuoka, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 53, No. 5 SPEC. ISSUE 1, p. 05FL07-1-05FL07-5, 2014/05
  • Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN, Tomoyuki Tanikawa,Tomotaka Sano,Maki Kushimoto,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 52, No. 8 PART 2, 2013/08
  • Growth of GaN on Si(111) substrates via a reactive-sputter-deposited AlN intermediate layer, Takaya Yamada,Tomoyuki Tanikaway,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano, Japanese Journal of Applied Physics, Vol. 52, No. 8, p. 08JB16-1-08JB16-3, 2013/08
  • AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN, T. Mitsunari,T. Tanikawa,Y. Honda,M. Yamaguchi,H. Amano, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 370, p. 16-21, 2013/05/01
  • Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE, Jung Hun Choi,Kanako Shojiki,Tomoyuki Tanikawa,Takashi Hanada,Ryuji Katayama,Takashi Matsuoka, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 10, No. 3, p. 417-420, 2013/03
  • Effects of low energy e-beam irradiation on cathodoluminescence from GaN, S. Suihkonen,H. Nykänen,T. Tanikawa,M. Yamaguchi,Y. Honda,H. Amano, Physica Status Solidi (A) Applications and Materials Science, WILEY-V C H VERLAG GMBH, Vol. 210, No. 2, p. 383-385, 2013/02
  • Defects generation and annihilation in GaN grown on patterned silicon substrate, N. Sawaki,S. Ito,T. Nakagit,H. Iwat,T. Tanikawa,M. Irie,Y. Honda,M. Yamaguchi,H. Amano, Proceedings of SPIE - The International Society for Optical Engineering, SPIE-INT SOC OPTICAL ENGINEERING, Vol. 8625, 2013
  • Strain relaxation in thick (11̄01) InGaN grown on GaN/Si substrate, Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano,Nobuhiko Sawaki, Physica Status Solidi (B) Basic Research, WILEY-BLACKWELL, Vol. 249, No. 3, p. 468-471, 2012/03
  • In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates, Tadashi Mitsunari,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 9, No. 3-4, p. 480-483, 2012/03
  • Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes, Tomoyuki Tanikawa,Tasuku Murase,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 8, No. 7-8, p. 2038-2040, 2011/07
  • Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate, Tasuku Murase,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 8, No. 7-8, p. 2160-2162, 2011/07
  • Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes, Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano, Physica Status Solidi (A) Applications and Materials Science, WILEY-BLACKWELL, Vol. 208, No. 5, p. 1175-1178, 2011/05
  • Optical properties of (1 1̄ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates, Ching Hsueh Chiu,Da Wei Lin,Chien Chung Lin,Zhen Yu Li,Yi Chen Chen,Shih Chun Ling,Hao Chung Kuo,Tien Chang Lu,Shing Chung Wang,Wei Tsai Liao,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Nobuhiko Sawaki, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 318, No. 1, p. 500-504, 2011/03/01
  • Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates, I. W. Feng,X. K. Cao,J. Li,J. Y. Lin,H. X. Jiang,N. Sawaki,Y. Honda,T. Tanikawa,J. M. Zavada, Applied Physics Letters, AMER INST PHYSICS, Vol. 98, No. 8, 2011/02/21
  • Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1 1- 01) semipolar GaN, Z. H. Wu,T. Tanikawa,T. Murase,Y. Y. Fang,C. Q. Chen,Y. Honda,M. Yamaguchi,H. Amano,N. Sawaki, Applied Physics Letters, AMER INST PHYSICS, Vol. 98, No. 5, 2011/01/31
  • Reduction of efficiency droop in Semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates, C. H. Chiu,D. W. Lin,C. C. Lin,Z. Y. Li,H. C. Kuo,T. C. Lu,S. C. Wang,W. T. Liao,T. Tanikawa,Y. Honda,M. Yamaguchi,N. Sawaki, 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011, IEEE, 2011
  • IQE and EQE of the nitride-based UV/DUV LEDs, H. Amano,G. J. Park,T. Tanikawa,Y. Honda,M. Yamaguchi,K. Ban,K. Nagata,K. Nonaka,K. Takeda,M. Iwaya,T. Takeuchi,S. Kamiyama,I. Akasaki, Optics InfoBase Conference Papers, IEEE, 2011
  • Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate, Ching Hsueh Chiu,Da Wei Lin,Zhen Yu Li,Shih Chun Ling,Hao Chung Kuo,Tien Chang Lu,Shing Chung Wang,Wei Tasi Liao,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Nobuhiko Sawaki, Proceedings of SPIE - The International Society for Optical Engineering, SPIE-INT SOC OPTICAL ENGINEERING, Vol. 7939, 2011
  • Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy, Tasuku Murase,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Hiroshi Amano,Nobuhiko Sawaki, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 50, No. 1 PART 2, 2011/01
  • Reduction of efficiency droop in semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates, Ching Hsueh Chiu,Da Wei Lin,Chien Chung Lin,Zhen Yu Li,Wei Ting Chang,Hung Wen Hsu,Hao Chung Kuo,Tien Chang Lu,Shing Chung Wang,Wei Tsai Liao,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Nobuhiko Sawaki, Applied Physics Express, JAPAN SOC APPLIED PHYSICS, Vol. 4, No. 1, 2011/01
  • Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation, B. J. Kim,T. Tanikawa,Y. Honda,M. Yamaguchi,N. Sawaki, Physica E: Low-Dimensional Systems and Nanostructures, ELSEVIER SCIENCE BV, Vol. 42, No. 10, p. 2575-2578, 2010/09
  • HVPE growth of a-plane GaN on a GaN template (110)Si substrate, Tomoyuki Tanikawa,Noriyuki Suzuki,Yoshio Honda,Masahito Yamaguchi,Nobuhiko Sawaki, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 7, No. 7-8, p. 1760-1763, 2010
  • Influence of a SiO <inf>2</inf> mask on the growth of semi-polar (11-22) GaN on patterned Si (311) substrates, Min Yang,Hyung Soo Ahn,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Nobuhiko Sawaki, Journal of the Korean Physical Society, Vol. 54, No. 6, p. 2363-2366, 2009/06
  • Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates, Min Yang,Hyung Soo Ahn,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Nobuhiko Sawaki, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, KOREAN PHYSICAL SOC, Vol. 54, No. 6, p. 2363-2366, 2009/06
  • Maskless selective growth of semi-polar (1 12̄ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy, Min Yang,Hyung Soo Ahn,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Nobuhiko Sawaki, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 311, No. 10, p. 2914-2918, 2009/05/01
  • HVPE growth of semi-polar (1 1 2̄ 2)GaN on GaN template (1 1 3)Si substrate, N. Suzuki,T. Uchida,T. Tanikawa,T. Hikosaka,Y. Honda,M. Yamaguchi,N. Sawaki, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 311, No. 10, p. 2875-2878, 2009/05/01
  • Reduction of dislocations in a (1 1 2̄ 2)GaN grown by selective MOVPE on (1 1 3)Si, T. Tanikawa,Y. Kagohashi,Y. Honda,M. Yamaguchi,N. Sawaki, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 311, No. 10, p. 2879-2882, 2009/05/01
  • Growth of non-polar (1 1 2̄ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE, T. Tanikawa,D. Rudolph,T. Hikosaka,Y. Honda,M. Yamaguchi,N. Sawaki, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 310, No. 23, p. 4999-5002, 2008/11/15
  • Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates, T. Hikosaka,T. Tanikawa,Y. Honda,M. Yamaguchi,N. Sawaki, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, p. 2234-2237, 2008
  • Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates, T. Hikosaka,T. Tanikawa,Y. Honda,M. Yamaguchi,N. Sawaki, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, WILEY-V C H VERLAG GMBH, Vol. 5, No. 6, p. 2234-2237, 2008
  • Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE, T. Tanikawa,T. Hikosaka,Y. Honda,M. Yamaguchi,N. Sawaki, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 5, No. 9, p. 2966-2968, 2008

Misc.

  • Nondestructive three-dimensional characterization of GaN using multiphoton-excitation photoluminescence mapping, TANIKAWA Tomoyuki, Oyo Buturi, The Japan Society of Applied Physics, Vol. 89, No. 9, p. 524-528, 2020/09
  • Frontiers of Nitride Semiconductor Research FOREWORD, Shigefusa F. Chichibu,Yoshinao Kumagai,Kazunobu Kojima,Momoko Deura,Toru Akiyama,Munetaka Arita,Hiroshi Fujioka,Yasufumi Fujiwara,Naoki Hara,Tamotsu Hashizume,Hideki Hirayama,Mark Holmes,Yoshio Honda,Masataka Imura,Ryota Ishii,Yoshihiro Ishitani,Motoaki Iwaya,Satoshi Kamiyama,Yoshihiro Kangawa,Ryuji Katayama,Yoichi Kawakami,Takahiro Kawamura,Atsushi Kobayashi,Masaaki Kuzuhara,Koh Matsumoto,Yusuke Mori,Takashi Mukai,Hisashi Murakami,Hideaki Murotani,Satoshi Nakazawa,Narihito Okada,Yoshiki Saito,Akira Sakai,Hiroto Sekiguchi,Koji Shiozaki,Kanako Shojiki,Jun Suda,Tetsuya Takeuchi,Tomoyuki Tanikawa,Jun Tatebayashi,Shigetaka Tomiya,Yoichi Yamada, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 58, 2019/06
  • Multiphoton-Excitation Photoluminescence as a Tool for Defect Characterization of GaN Crystal, Tomoyuki Tanikawa, Materia Japan, Japan Institute of Metals, Vol. 58, No. 3, p. 144-149, 2019/03/01
  • トップダウンナノテクノロジーで作製したIn<sub>0.3</sub>Ga<sub>0.7</sub>Nナノディスクにおける光励起キャリアの熱脱離, CHEN Yafeng,木場隆之,高山純一,肥後昭男,谷川智之,寒川誠二,村山明宏, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), Vol. 79th, 2018
  • Observation of Threading Dislocation in Thick GaN Crystal Using Inelastically Scattered Electron, Kiguchi Takanori,Shiraishi Takahisa,Konno Toyohiko J.,Tanikawa Tomoyuki, Materia Japan, The Japan Institute of Metals and Materials, Vol. 57, No. 12, p. 615-615, 2018
  • Crystal Growth Technology of N-polar Nitride Semiconductors by Metalorganic Vapor Phase Epitaxy, Vol. 45, No. 1, 2018
  • Crystal Growth Technology of N-polar Nitride Semiconductors by Metalorganic Vapor Phase Epitaxy, Tanikawa Tomoyuki,Prasertsuk Kiattiwut,Kimura Takeshi,Kuboya Shigeyuki,Matsuoka Takashi, Journal of the Japanese Association for Crystal Growth, The Japanese Association for Crystal Growth, Vol. 45, No. 1, 2018
  • N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching, Kiattiwut Prasertsuk,Tomoyuki Tanikawa,Takeshi Kimura,Shigeyuki Kuboya,Tetsuya Suemitsu,Takashi Matsuoka, Applied Physics Express, Japan Society of Applied Physics, Vol. 11, No. 1, 2018/01
  • N極性n型GaN上Niショットキー特性に対するアニール効果の評価, 寺島 勝哉,野々田 亮平,正直 花奈子,谷川 智之,松岡 隆志,岡本 浩, 電気関係学会東北支部連合大会講演論文集, 電気関係学会東北支部連合大会実行委員会, Vol. 2017, No. 0, p. 30-30, 2017
  • Electrical characteristics of N-polar p-type GaN Schottky contacts, Vol. 115, No. 156, p. 1-4, 2015/07/24
  • Fabrication of InGaN/GaN Multiple Quantum Wells on (1101) GaN (Special Issue : Recent Advances in Nitride Semiconductors), Japanese journal of applied physics : JJAP, The Japan Society of Applied Physics, Vol. 52, No. 8, p. 08JC05-1-3, 2013/08
  • In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates, Mitsunari, Tadashi,Tanikawa, Tomoyuki,Honda, Yoshio,Yamaguchi, Masahito,Amano, Hiroshi, Physca Status Solidi c, Vol. 9, No. 3-4, 2012/07/01
  • Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si, KUSHIMOTO Maki,TANIKAWA Tomoyuki,HONDA Yoshio,YAMAGUCHI Masahito,AMANO Hiroshi, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 112, No. 33, p. 15-18, 2012/05/10
  • MOVPE growth of thick-InGaN on (1-101)GaN/Si, TANIKAWA Tomoyuki,HONDA Yoshio,YAMAGUCHI Masahito,AMANO Hiroshi,SAWAKI Nobuhiko, IEICE technical report, The Institute of Electronics, Information and Communication Engineers, Vol. 111, No. 44, p. 63-66, 2011/05/12
  • Aging test of AlGaN-based ultraviolet light emitting diodes : The Degradation Mechanism of UV-LED, PARK Gwi Jin,SUGIYAMA Takayuki,TANIKAWA Tomoyuki,HONDA Yoshio,YAMAGUCHI Masahito,AMANO Hiroshi,INAZU Tetsuhiko,FUJITA Takehiko,PERNOT Cyril,HIRANO Akira, IEICE technical report, The Institute of Electronics, Information and Communication Engineers, Vol. 111, No. 45, p. 123-126, 2011/05/12
  • Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates (vol 4, 012105, 2011), Ching-Hsueh Chiu,Da-Wei Lin,Chien-Chung Lin,Zhen-Yu Li,Wei-Ting Chang,Hung-Wen Hsu,Hao-Chung Kuo,Tien-Chang Lu,Shing-Chung Wang,Wei-Tsai Liao,Tomoyuki Tanikawa,Yoshio Honda,Masahito Yamaguchi,Nobuhiko Sawaki, APPLIED PHYSICS EXPRESS, JAPAN SOC APPLIED PHYSICS, Vol. 4, No. 3, 2011/03
  • Spatially homogeneous ferromagnetism of (Ga, Mn)As, S. R. Dunsiger,J. P. Carlo,T. Goko,G. Nieuwenhuys,T. Prokscha,A. Suter,E. Morenzoni,D. Chiba,Y. Nishitani,T. Tanikawa,F. Matsukura,H. Ohno,J. Ohe,S. Maekawa,Y. J. Uemura, Nature Materials, NATURE PUBLISHING GROUP, Vol. 9, No. 4, p. 299-303, 2010/04
  • MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE, TANIKAWA Tomoyuki,HONDA Yoshio,YAMAGUCHI Masahito, IEICE technical report, The Institute of Electronics, Information and Communication Engineers, Vol. 109, No. 422, p. 23-28, 2010/02/15
  • Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers, S. Ikeda,J. Hayakawa,Y. M. Lee,T. Tanikawa,F. Matsukura,H. Ohno, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 99, No. 8, 2006/04

Publications

  • Characterization of defects and deep levels for GaN power devices, Narita Tetsuo,Kachi Tetsu, AIP Publishing, ISBN:9780735422704, 2020/12

Industrial Property Rights

  • 太陽電池, 松岡 隆志,片山 竜二,谷川 智之, 特許第6164685号, 特願2013-139463, 出願日:2013/07/03, 登録日:2017/06/30
  • 窒化物半導体構造及びその製造方法, 澤木宣彦,本田善央,彦坂年輝,谷川智之, 特許第4913674号, 特願2007-151792, 出願日:2007/06/07
  • 分散ブラッグ反射器およびその製造方法, 光成 正,谷川智之,本田善央,山口雅史,天野 浩, 特願2012-41845

Awards

  • 第41回(2019年度)応用物理学会論文賞, 谷川智之,大西一生,加納雅也,向井孝志,松岡隆志, 応用物理学会, 2019/09
  • 第19回奨励賞, 谷川智之, 日本結晶成長学会, 2021/10
  • Young Scientist Award, Tomoyuki Tanikawa,Mayuko Tsukakoshi,Masahiro Uemukai,Ryuji Katayama, The 8th Asian Conference on Crystal Growth and Crystal Technology, 2021/03
  • 第47回結晶成長国内会議 講演奨励賞, 谷川智之,松岡隆志, 日本結晶成長学会, 2018/11
  • 第7回(2018年度) 研究開発奨励賞 優秀賞, 谷川智之, 一般財団法人エヌエフ基金, 2018/11
  • 第42回(2017年春季)応用物理学会 講演奨励賞, 谷川智之,大西一生,加納聖也,向井孝志,松岡隆志, 公益社団法人 応用物理学会, 2017/09
  • EMS賞, 第35回電子材料シンポジウム, 2016/07
  • 第7回薄膜太陽電池セミナー ポスター発表アワード, 第7回薄膜太陽電池セミナー組織委員, 2016/03/14
  • Young Scientist Award, The 6th International Symposium on Growth of III-Nitrides, 2015/11/12
  • 第6回 窒化物半導体結晶成長講演会 研究奨励賞, 日本結晶成長学会, 2014/07/26
  • Young Researcher's Paper Award, Conference on LED and its industrial application '14 (LEDIA'14), 2014/04/25
  • 第126回 金研講演会(2013年秋季)優秀ポスター賞, 東北大学金属材料研究所, 2013/11/28
  • 応用物理学会東北支部講演奨励賞, 応用物理学会東北支部, 2012/12/06
  • 応用物理学会・結晶工学分科会発表奨励賞, 応用物理学会・結晶工学分科会, 2010/12/17
  • 電子情報通信学会 平成21年度学生研究奨励賞, 電子情報通信学会 東海支部, 2010/06/08
  • 第2回 窒化物半導体結晶成長講演会 発表奨励賞, 日本結晶成長学会ナノエピ分科会, 2010/05/15
  • 名古屋大学学術奨励賞, 名古屋大学, 2010/03/24
  • ALPS Student Paper Award, Ryosuke Noro,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama, The 9th Advanced Lasers and Photon Sources (ALPS2020)

Presentations

  • サファイア基板上N極性GaN薄膜の有機金属気相成長法における平坦化条件の探索, 池田和久,村田知駿,上向井正裕,谷川智之,片山竜二, 第50回結晶成長国内会議(JCCG-50), 2021/10/27
  • 気相拡散効果を利用したマルチカラーInGaN多重量子井戸の有機金属気相選択成長, 吉田 新,正直花奈子,三宅秀人,谷川智之,上向井正裕,片山竜二, 第50回結晶成長国内会議(JCCG-50), 2021/10/28
  • Fabrication of 3.3 um Periodically-Poled MgO:SLT Structure for Quantum Light Sources at 810 nm, H. Nishigaki,R. Noro,M. Uemukai,T. Tanikawa and R. Katayama, 第40回電子材料シンポジウム, 2021/10/11
  • Improved Fabrication of Transverse Quasi-Phase-Matched Double-Layer Polarity Inverted AlN Waveguide for 230-nm Second Harmonic Generation, S. Umeda,H. Honda,T. Nambu,S. Ichikawa,Y. Fujiwara,K. Shojiki,H. Miyake,M. Uemukai,T. Tanikawa,R. Katayama, 第40回電子材料シンポジウム, 2021/10/11
  • Design of Non-Polar/AlN Transverse Quasi-Phase Matched Channel Waveguides for 230-nm Far-UV Second Harmonic Generation, H. Honda,K. Shojiki,H. Miyake,M. Uemukai,T. Tanikawa and R. Katayama, 第40回電子材料シンポジウム, 2021/10/11
  • Fabrication of GaN Polarity Inverted Structure via Ultrathin AlN Oxidation Interlayer using Metalorganic Vapor Phase Epitaxy, T. Murata,T. Tanikawa,M. Uemukai and R. Katayama, 第40回電子材料シンポジウム, 2021/10/11
  • Efficiency Evaluation of GaN Transverse Quasi-Phase-Matched Wavelength Conversion Device under Femtosecond Laser Excitation, N. Yokoyama,H. Honda,T. Murata,K. Serita,H. Murakami,M. Tonouchi,S. Tokita,S. Ichikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa and R. Katayama, 第40回電子材料シンポジウム, 2021/10/11
  • Fabrication of Orientation Modulated GaN Template for Monolithic Integrated Full-Color InGaN Light-Emitting Diodes, Y. Yasuda,R. Tanabe,M. Uemukai,T. Tanikawa and R. Katayama, 第40回電子材料シンポジウム, 2021/10/11
  • Correlation Between MPPL and Raman Mapping Images of GaN for Nondestructive Identification of Threading Dislocations, M. Tsukakoshi,T. Tanikawa,M. Uemukai and R. Katayama, 第40回電子材料シンポジウム, 2021/10/11
  • 230 nm遠紫外第二高調波発生に向けた横型擬似位相整合2層極性反転AlN導波路の作製, 梅田颯志,本田啓人,南部誠明,市川修平,藤原康文,正直花奈子,三宅秀人,上向井正裕,谷川智之,片山竜二, 第82回応用物理学会秋季学術講演会, 2021/08/12
  • 230 nm遠紫外第二高調波発生に向けた横型擬似位相整合HfO2/AlN導波路の設計, 本田啓人,梅田颯志,正直花奈子,三宅秀人,上向井正裕,谷川智之,片山竜二, 第82回応用物理学会秋季学術講演会, 2021/08/12
  • 多光子励起フォトルミネッセンス法によるβ-Ga2O3結晶の三次元イメージング, 西河巴賀,塚越真悠子,後藤 健,村上 尚,熊谷義直,谷川智之,上向井正裕,片山竜二, 第82回応用物理学会秋季学術講演会, 2021/08/12
  • 電界印加型光導波路マッハツェンダ干渉計へ向けたGaN導波路型方向性結合器の作製, 久田雄太,亀井拓哉,市川修平,藤原康文,上向井正裕,谷川智之,片山竜二, 第82回応用物理学会秋季学術講演会, 2021/08/12
  • 有機金属気相成長法を用いたGaNエピタキシャル極性反転技術の開発, 村田知駿,谷川智之,上向井正裕,片山竜二, 第82回応用物理学会秋季学術講演会, 2021/08/13
  • Experimental Determination of Wavelength Conversion Efficiency in Transverse Quasi-Phase-Matched GaN SHG Waveguide Excited with Femtosecond Laser, N. Yokoyama,Y. Morioka,T. Murata,H. Honda,F. R. G. Bagsican,K. Serita,H. Murakami,M. Tonouchi,S. Ichikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa,R. Katayama, 2021 International Conference on Solid State Devices and Materials (SSDM2021), 2021/09/08
  • Nondestructive Characterization of Dislocations Using Multiphoton-Excitation Photoluminescence, T. Tanikawa,A. Ogura,M. Uemukai,R. Katayama, SemiconNano2021, 2021/09/03
  • 窒化物半導体の波長変換デバイス応用, 谷川智之, 応用物理学会中国四国支部・若手半導体研究会, 2021/08/23
  • 多光子励起過程を利用した次世代半導体材料の欠陥評価技術, 谷川智之, 日本学術振興会第R032委員会 第2回研究会「R032委員会キックオフ研究会:結晶作製Ⅱ」, 2021/08/06
  • MgO:SLTを用いた3.3 μm周期分極反転構造の作製, 野呂諒介,上向井正裕,谷川智之,片山竜二, 第68回応用物理学会春季学術講演会, 2021/03/18
  • GaN結晶中の貫通転位の非破壊分類に向けた多光子励起PLマッピング像とラマンマッピング像の相関解析, 谷川智之,足立真理子,寺田陸斗,塚越真悠子,上向井正裕,片山竜二, 第68回応用物理学会春季学術講演会, 2021/03/17
  • 表面活性化接合を用いた面方位変調GaNテンプレートの作製と組成変調InGaN量子井戸の有機金属気相成長, 田辺 凌,吉田 新,安田悠馬,上向井正裕,谷川智之,片山竜二, 第68回応用物理学会春季学術講演会, 2021/03/16
  • GaN横型擬似位相整合第二高調波発生デバイスの効率評価, 横山尚生,村田知駿,本田啓人,市川修平,藤原康文,上向井正裕,谷川智之,片山竜二, 第68回応用物理学会春季学術講演会, 2021/03/16
  • AlN微小二重共振器型面発光DUV第二高調波発生デバイスの検討, 南部誠明,矢野岳人,永田拓実,田辺 凌,梅田颯志,市川修平,藤原康文,上向井正裕,谷川智之,片山竜二, 第68回応用物理学会春季学術講演会, 2021/03/16
  • 230 nm深紫外光発生に向けた2層極性反転AlN導波路の設計と作製, 本田啓人,永田拓実,市川修平,藤原康文,正直花奈子,三宅秀人,上向井正裕,谷川智之,片山竜二, 第68回応用物理学会春季学術講演会, 2021/03/16
  • 広帯域光子対発生に向けたGaN導波路型微小共振器デバイスの作製, 永田拓実,梅田颯志,隈部岳瑠,安藤悠人,出来真斗,本田善央,天野 浩,トーマスポージン,山田和輝,岩谷素顕,上向井正裕,谷川智之,片山竜二, 第68回応用物理学会春季学術講演会, 2021/03/16
  • InGaN高次結合ディープエッチDBRレーザ, 樋口晃大,松下就哉,上向井正裕,谷川智之,片山竜二, 第68回応用物理学会春季学術講演会, 2021/03/16
  • Novel wavelength converters made of nitride semiconductors: transverse QPM waveguides and monolithic microcavities, R. Katayama,M. Uemukai,T. Tanikawa, SPIE Photonics West: Conference 11686 -Gallium Nitride Materials and Devices XVI-, 2021/03/03
  • Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping, T. Tanikawa,M. Tsukakoshi,M. Uemukai,R. Katayama, SPIE Photonics West: Conference 11686 -Gallium Nitride Materials and Devices XVI-, 2021/03/03
  • Novel Method of Short-Wavelength Emission from Polarity-Inverted Nitride Semiconductor Waveguides, R. Katayama,M. Uemukai,T. Tanikawa, The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), 2021/03/01
  • Classification of threading dislocations in HVPE-grown n-type GaN substrates by multiphoton-excitation photoluminescence imaging, M. Tsukakoshi,T. Tanikawa,M. Uemukai,R. Katayama, The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), 2021/03/01
  • Core structure of threading dislocations in GaN, T. Kiguchi,Y. Kodama,Y. Hayasaka,T. Tanikawa,T. J. Konno, The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), 2021/03/01
  • 多光子励起フォトルミネッセンスによる結晶欠陥の非侵襲観察, 谷川智之, 新学術領域研究 特異構造の結晶科学 オンライン成果報告・連絡会(Zoom), 2021/02/24
  • 窒化物半導体極性制御特異構造の形成技術の深化と物性・機能の制御, 片山竜二, 新学術領域研究 特異構造の結晶科学 オンライン成果報告・連絡会(Zoom), 2021/01/13
  • ワイドギャップ窒化物半導体波長変換デバイスによる紫外光発生, 片山 竜二,上向井 正弘,谷川 智之, 応用物理学会 応用電子物性分科会 研究例会 紫外材料 ・デバイス開発の最前線 ~物性の理解 とデバイス開発~, 2020/11/18
  • Design of GaN Waveguide Microcavity Device for Broadband Photon Pair Generation, T. Nagata,S. Umeda,M. Uemukai,T. Tanikawa,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/08
  • Design of Waveguide Directional Coupler for Electric-Field Driven GaN Mach-Zehnder Interferometer, Y. Hisada,A. Tomibayashi,M. Uemukai,T. Tanikawa,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/08
  • Comparative study of dislocation classification in HVPE-grown GaN by etch pit method and multiphoton-excitation photoluminescence imaging, M. Tsukakoshi,T. Tanikawa,M. Uemukai,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/08
  • Design of Ttransverse Quasi-Phase-Matched Double-Layer AlN Waveguide for 230-nm DUV Second Harmonic Generation, H. Honda,N. Yokoyama,A. Yamauchi,T. Komatsu,K. Shojiki,H. Miyake,M. Uemukai,T. Tanikawa and R. Katayama, 第39回電子材料シンポジウム, 2020/10/08
  • First Demonstration of Tunable Single-Mode InGaN Laser with Periodically Slotted Structure, A. Higuchi,M. Uemukai,T. Tanikawa,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/08
  • Role of Low-Temperature Buffer Layer and GaN Flattening Layer on Metalorganic Vapor Phase Epitaxy of Lattice-Matched InGaN on ScAlMgO4, S. Yoshida,N. Ryoki,K. Miyano,T. Tanikawa,M. Uemukai,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/08
  • Electrical and Optical Characteristics of ITO Electrode for Electrically-Tunable Waveguide Phase Shifter, A. Tomibayashi,Y. Hisada,M. Uemukai,T. Tanikawa,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/08
  • Design and Fabrication of AlN Waveguide Microcavity SHG Device, S. Umeda,T. Nagata,M. Uemukai,T. Tanikawa,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/08
  • Annealed Proton-Exchanged Waveguide with Large Mode Size in Quasi-Phase-Matched MgO:SLT for High Power Second Harmonic Generation, R. Noro,M. Uemukai,T. Tanikawa,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/07
  • Transverse Quasi-Phase-Matched Second Harmonic Generation using Polarity-Inverted GaN Channel Waveguide with Input Grating Coupler, T. Murata,N. Yokoyama,T. Komatsu,Y. Morioka,M. Uemukai,T. Tanikawa,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/07
  • Fabrication of GaN Polarity-Inverted Structure by Inductively Coupled Plasma Reactive Ion Etching and Surface Activated Bonding, N. Yokoyama,R. Tanabe,S. Ichikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/07
  • Epitaxial Growth of InGaN Thin Film with High InN Molar Fraction by Pulsed DC Sputtering, Y. Onishi,H. Miura,N. Takahashi,M. Uemukai,T. Tanikawa,and R. Katayama, 第39回電子材料シンポジウム, 2020/10/07
  • グレーティング結合器集積GaN横型擬似位相整合第二高調波発生デバイス, 横山尚生,森岡佳紀,森川隆哉,藤原康文,上向井正裕,谷川智之,片山竜二, 第81回応用物理学会秋季学術講演会, 2020/09/10
  • 周期的スロット構造を用いたInGaN波長可変単一モードレーザ, 樋口晃大,上向井正裕,谷川智之,片山竜二, 第81回応用物理学会秋季学術講演会, 2020/09/10
  • 量子もつれ光子対発生に向けたZnO/ZnMgO多重量子井戸微小共振器の設計, 矢野岳人,上向井正裕,谷川智之,片山竜二, 第81回応用物理学会秋季学術講演会, 2020/09/09
  • ワイドギャップ半導体の分極制御と量子光学応用:遠UVC全固体光源, 片山竜二,上向井正裕,谷川智之, 第81回応用物理学会秋季学術講演会, 2020/09/09
  • 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶の貫通転位の観察と分類 (2), 塚越真悠子,谷川智之,上向井正裕,片山竜二, 第81回応用物理学会秋季学術講演会, 2020/09/08
  • 高出力第二高調波発生に向けたMgO:SLT擬似位相整合アニールプロトン交換導波路, 野呂諒介,上向井正裕,谷川智之,片山竜二, 第81回応用物理学会秋季学術講演会, 2020/09/08
  • 多光子励起フォトルミネッセンス測定における 集光スポットサイズを考慮した GaN結晶中の貫通転位の判別, 塚越真悠子,谷川智之,上向井正裕,片山竜二, 日本結晶成長学会ナノエピ分科会「第12回ナノ構造・エピタキシャル成長講演会」, 2020/07/31
  • 多光子励起PL三次元測定によるGaN基板中の転位の判別, 谷川智之,塚越真悠子,上向井正裕,片山竜二, ワイドギャップ半導体光・電子デバイス第162委員会 第118回研究会「最先端評価技術を用いたワイドギャップ半導体結晶中の転位評価」, 2020/07/03
  • Fabrication of Annealed ProtonExchanged Waveguide in PeriodicallyPoled MgO:s-LiTaO3 for High Power Second Harmonic Generation, R. Noro,M. Uemukai,T. Tanikawa,R. Katayama, 9th Advanced Lasers and Photon Sources Conference (ALPS2020), 2020/04/23
  • Fabrication process of InGaN high-order deeply etched DBR laser, A. Higuchi,D. Tazuke,M. Uemukai,T. Tanikawa,R. Katayama, 8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020), 2020/04/21
  • Design of AlN doubly-resonant waveguide microcavity SHG device, S. Umeda,T. Nagata,M. Uemukai,T. Tanikawa,R. Katayama, 8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020), 2020/04/21
  • Inductively coupled plasma reactive ion etching of GaN films maintaining surface flatness for surface activated bonding, N. Yokoyama,R. Tanabe,T. Morikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa,R. Katayama, 8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020), 2020/04/21
  • Correlation between etch pit size and threading dislocation propagation habit in GaN substrate observed by multiphoton-excitation photoluminescence, M. Tsukakoshi,T. Tanikawa,M. Uemukai,R. Katayama, 8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020), 2020/04/21
  • GaN縦型p-nダイオードにおける2光子吸収光電流の測定, 川崎晟也,安藤悠人,田中敦之,塚越真悠子,谷川智之,出来真斗,久志本真希,新田州吾,本田善央,天野浩, 第67回応用物理学会春季学術講演会, 2020/03/15
  • AlN導波路型微小二重共振器第二高調波発生デバイスの設計, 梅田颯志,永田拓実,彦坂年輝,布上真也,上向井正裕,谷川智之,片山竜二, 第67回応用物理学会春季学術講演会, 2020/03/15
  • 表面活性化接合に必要な表面平坦性を維持するGaNのエッチング, 横山尚生,田辺凌,上向井正裕,谷川智之,片山竜二, 第67回応用物理学会春季学術講演会, 2020/03/14
  • 横型擬似位相整合 GaN 導波路型波長変換デバイスの開発, 小松天太,彦坂年輝,布上真也,上向井正裕,谷川智之,片山竜二, 第67回応用物理学会春季学術講演会, 2020/03/13
  • 高出力第二高調波発生に向けた周期分極反転MgO:s-LiTaO3アニールプロトン交換導波路の作製, 野呂諒介,岡﨑雅英,溝端一国雄,上向井正裕,谷川智之,片山竜二, 第67回応用物理学会春季学術講演会, 2020/03/12
  • 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶中貫通転位の観察と分類, 塚越真悠子,谷川智之,上向井正裕,片山竜二, 第67回応用物理学会春季学術講演会, 2020/03/12
  • ワイドギャップ材料における貫通転位と量子井戸構造の解析, 木口賢紀,兒玉裕美子,白石貴久,今野豊彦,谷川智之, 大阪大学ナノテクノロジー設備供用拠点 微細構造解析プラットフォーム 2019 年度 第 2 回地域セミナー デバイス開発に資する微細構造解析 - 次世代エレクトロニクスを支える先端デバイス開発を目指して -, 2020/01/16
  • 量子光応用に向けた酸化物・窒化物ハイブリッド半導体ヘテロ構造の実現, 小島一信,窪谷茂幸,谷川智之,片山竜二, 東北大学 若手アンサンブルP・リコレクションシンポジウム, 2019/12/18
  • 多光子励起フォトルミネッセンスによる結晶欠陥の非侵襲観察, 谷川智之, 科学研究費補助金 新学術領域研究 「特異構造の結晶科学」第5回領域全体会議(金沢商工会議所会館), 2019/11/28
  • 窒化物半導体極性制御特異構造の形成技術の深化と物性・機能の制御, 片山竜二, 科学研究費補助金 新学術領域研究 「特異構造の結晶科学」第5回領域全体会議(金沢商工会議所会館), 2019/11/27
  • 窒化物半導体極性制御特異構造の形成技術の深化と物性・機能の制御, 片山竜二, 科学研究費補助金 新学術領域研究 「特異構造の結晶科学」第4回領域全体会議(金沢商工会議所会館), 2019/11/20
  • Development of GaN Waveguide Wavelength Filter for Quantum Optical Application, T. Komatsu,M. Kihira,T. Hikosaka,S. Nunoue,M. Uemukai,T. Tanikawa,R Katayama, 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 2019/11/12
  • Nondestructive defect characterization of widegap semiconductors using multiphotonexcitation photoluminescence, T. Tanikawa,M. Uemukai,R. Katayama, 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 2019/11/12
  • Design of Deep Ultraviolet Second Harmonic Generation Device with Double-Layer Polarity Inverted AlN Waveguide, A. Yamauchi,T. Komatsu,K. Ikeda,K. Uesugi,K. Syojiki,H. Miyake,T. Hikosaka,S. Nunoue,T. Morikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa,R. Katayama, 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 2019/11/12
  • Bonding Strength of Polarity-Inverted GaN Structure Fabricated by Surface-Activated Bonding, R. Tanabe,N. Yokoyama,M. Uemukai,T. Tanikawa,R. Katayama, 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 2019/11/11
  • Design and Fabrication of GaN Doubly-Resonant Waveguide Microcavity SHG Device, T. Nagata,M. Uemukai,T. Hikosaka,S. Nunoue,T. Morikawa,Y. Fujiwara,T. Tanikawa,R. Katayama, 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), 2019/11/11
  • Quantum Optical Application of Nitride Semiconductor, Ryuji Katayama,Masahiro Uemukai,Tomoyuki Tanikawa, Singularity Project Workshop of China-Korea-Japan October 18th, 2019 (Mie University, Japan), 2019/10/18
  • GaN Waveguide Directional Coupler and Wavelength Filter for Quantum Optical Application, M. Maeda,T. Komatsu,M. Kihira,T. Hikosaka,S. Nunoue,M. Uemukai,T. Tanikawa,R. Katayama, 第38回電子材料シンポジウム (EMS-38), 2019/10/11
  • Input Focusing Grating Coupler for Deep UV AlN Waveguide SHG Device, Y. Morioka,M. Uemukai,K. Uesugi,K. Shojiki,H. Miyake,T. Morikawa,Y. Fujiwara,T. Tanikawa,R. Katayama, 第38回電子材料シンポジウム (EMS-38), 2019/10/11
  • Bonding Strength Optimization of Polarity-Inverted GaN/GaN Structure Fabricated by Surface-Activated Bonding, N. Yokoyama,R. Tanabe,M. Uemukai,T. Tanikawa,R. Katayama, 第38回電子材料シンポジウム (EMS-38), 2019/10/11
  • Fabrication of Periodically-Poled Structure in MgO:s-LiTaO3 by Voltage Application with SiO2 Insulation Layer, R. Noro,M. Uemukai,T. Tanikawa,R. Katayama, 第38回電子材料シンポジウム (EMS-38), 2019/10/10
  • Design of GaN Doubly-Resonant Waveguide Microcavity SHG Device, S. Umeda,T. Nagata,T. Hikosaka,S. Nunoue,T. Morikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa,R. Katayama, 第38回電子材料シンポジウム (EMS-38), 2019/10/10
  • Raman Scattering Evaluation of Strain Evolution During Surface-Activated Bonding of GaN and Removal of Si Substrate, R. Tanabe,N. Yokoyama,M. Uemukai,T. Hikosaka,S. Nunoue,K. Shojiki,H. Miyake,M. Kushimoto,H. Cheong,Y. Honda,H. Amano,T. Tanikawa,R. Katayama, 第38回電子材料シンポジウム (EMS-38), 2019/10/10
  • Pulsed DC sputtering growth of Mg-doped GaN thin film, Y. Onishi,S. Imai,H. Miura,N. Takahashi,M. Uemukai,T. Tanikawa,R. Katayama, 第38回電子材料シンポジウム (EMS-38), 2019/10/10
  • Input Focusing Grating Coupler for AlN Deep UV Waveguide SHG Device, Y. Morioka,M. Uemukai,T. Tanikawa,K. Uesugi,K. Shojiki,H. Miyake,T. Morikawa,Y. Fujiwara,R. Katayama, 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019), 2019/09/25
  • InGaN Laser Pumped Nitride Semiconductor Transverse Quasi-Phase-Matched Waveguide Second Harmonic Generation Devices, M. Uemukai,S. Yamaguchi,A. Yamauchi,D. Tazuke,A. Higuchi,R. Tanabe,T. Tanikawa,T. Hikosaka,S. Nunoue,Y. Hayashi,H. Miyake,Y. Fujiwara,R. Katayama, 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019), 2019/09/24
  • 多光子励起による窒化ガリウム結晶の時間分解フォトルミネセンス分光(1), 谷川智之,小島一信,粕谷拓生,秩父重英,田中敦之,本田善央,天野 浩,上向井正裕,片山竜二, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • 多光子励起による窒化ガリウム結晶の時間分解フォトルミネセンス分光(2), 小島一信,谷川智之,粕谷拓生,秩父重英,田中敦之,本田善央,天野 浩,上向井正裕,片山竜二, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • 界面顕微光応答法によるN極性p形GaNショットキー電極の2次元評価, 塩島謙次,谷川智之,片山竜二,松岡隆志, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • GaN導波路型微小二重共振器第二高調波発生デバイスの設計と試作, 永田拓実,上向井正裕,彦坂年輝,布上真也,森川隆哉,藤原康文,谷川智之,片山竜二, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • 2層極性反転積層AlN導波路を用いた深紫外第二高調波発生デバイスの設計, 山内あさひ,小松天太,池田和久,上杉謙次郎,正直花奈子,三宅秀人,彦坂年輝,布上真也,森川隆哉,藤原康文,上向井正裕,谷川智之,片山竜二, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • 横型擬似位相整合AlN導波路による第二高調波発生の原理実証, 山内あさひ,山口修平,小野寺卓也,林 侑介,三宅秀人,彦坂年輝,布上真也,塩見圭史,藤原康文,芹田和則,川山 巌,斗内政吉,上向井正裕,片山竜二, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • AlN導波路第二高調波発生デバイスのための集光グレーティング結合器, 森岡佳紀,上向井正裕,上杉謙次郎,正直花奈子,三宅秀人,森川隆哉,藤原康文,谷川智之,片山竜二, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • 量子光学応用のためのGaN導波路型波長フィルタの開発, 小松天太,紀平将史,上向井正裕,谷川智之,彦坂年輝,布上真也,片山竜二, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • [優秀論文賞受賞記念講演] Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence, 谷川智之,大西一生,加納聖也,向井孝志,松岡隆志, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • 表面活性化接合により作製したGaN分極反転積層構造の接合強度評価, 田辺 凌,横山尚生,上向井正裕,谷川智之,片山竜二, 第80回応用物理学会秋季学術講演会, 2019/09/19
  • 多光子励起フォトルミネッセンスによる格子不整合系逆成長InGaAs単一接合太陽電池のバッファ層内における転位の観察 (II), 小倉暁雄,谷川智之,高本達也,大島隆治,菅谷武芳,今泉 充, 第80回応用物理学会秋季学術講演会, 2019/09/18
  • ワイドギャップ半導体を用いた新規波長変換デバイスの開発 -極性反転導波路と微小共振器-, 片山竜二,上向井正裕,谷川智之, 第80回応用物理学会秋季学術講演会, 2019/09/18
  • Multiphoton-Excitation Photoluminescence: Novel Nondestructive Deffect Characterization Technology, T. Tanikawa,T. Matsuoka, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19), 2019/08/01
  • Observation of Dislocations in Graded Buffer Layers of IMM Single Junction InGaAs Solar Cells by Two-Photon Excitation Photoluminescence, A. Ogura,T. Tanikawa,T. Takamoto,R. Oshima,H. Suzuki,M. Imaizumi,T. Sugaya, 46th IEEE Photovoltaic Specialists Conference (PVSC 46), 2019/06/17
  • 多光子顕微鏡によるGaN結晶中の転位伝搬評価, 谷川智之,松岡隆志, 第145委員会,第161委員会 合同研究会 「窒化物半導体における欠陥低減技術の進展と評価技術の最前線」, 2019/05/08
  • First Demonstration of GaN Monolithic Doubly-Resonant Microcavity SHG Device on Si Pedestal Structure, M. Uemukai,T. Nambu,T. Nagata,T. Hikosaka,S. Nunoue,K. Shiomi,Y. Fujiwara,K. Ohnishi,T. Tanikawa,R. Katayama, The 7th International Conference on Light-Emitting Devices and their Industrial Applications (LEDIA'19), 2019/04/25
  • 多光子励起フォトルミネッセンスによる結晶欠陥の非侵襲観察, 谷川智之, 科学研究費補助金 新学術領域研究 「特異構造の結晶科学」第4回領域全体会議(金沢商工会議所会館), 2019/04/19
  • Quantum Optical Application of Nitride Semiconductor, Ryuji Katayama,Masahiro Uemukai,Tomoyuki Tanikawa, Singularity Project Workshop of China-Korea-Japan October 18th, 2019 (Mie University, Japan), 2019/03/18
  • 多光⼦励起フォトルミネッセンスによる格⼦不整合系逆成⻑InGaAs単 ⼀接合太陽電池のバッファ層内における転位の観察, ⼩倉 暁雄,⾕川 智之,⾼本 達也,⼤島 隆治,菅⾕ 武芳,今泉 充, 第66回応用物理学会春季学術講演会, 2019/03/11
  • Si台座構造上GaNモノリシック微⼩⼆重共振器型第⼆⾼調波発⽣デ バイスの作製, 南部誠明,永⽥拓実,塩⾒圭史,藤原康⽂,⼤⻄⼀⽣,⾕川智之,上向井正裕,⽚⼭⻯⼆, 第66回応用物理学会春季学術講演会, 2019/03/10
  • 多光子励起PLマッピングによるGaN系特異構造の3次元マッピング, 谷川智之,松岡隆志, 第66回応用物理学会春季学術講演会, 2019/03/09
  • Three-dimensional characterization of GaN crystals using multiphoton-excitation photoluminescence, T. Tanikawa,T. Matsuoka, Photonics West 2019, 2019/02/05
  • Reverse-bias-induced virtual gate phenomenon in N-polar GaN HEMTs, T. Suemitsu,Kiattiwut Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Matsuoka, 2018 MRS Fall Meeting, 2018/11/25
  • Novel Characterization Technique of Threading Dislocations in GaN Using Multiphoton-Excitation Photoluminescence, T. Tanikawa,T. Matsuoka, 4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4), 2018/11/20
  • Evaluation of deep levels in N-polar GaN epitaxial layers by photo-current DLTS: An approach to reveal the self-compensation effect of Mg doping in p-type GaN, H. Okamoto,H. Suzuki,R. Nonoda,T. Tanikawa, 4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4), 2018/11/20
  • Reuse of ScAlMgO4 Substrates Utilized for Halide Vapor Phase Epitaxy of GaN, K. Ohnishi,S. Kuboya,T. Tanikawa,T. Fukuda,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN2018), 2018/11/15
  • Defect structure analysis of N-polar InGaN/GaN quantum-well structure, T. Kiguchi,Y. Kodama,T. Shiraishi,T. J. Konno,T. Tanikawa, International Workshop on Nitride Semiconductors (IWN2018), 2018/11/15
  • Three-Dimensional and Non-Destructive Investigation of Relation between Reverse Leakage Current and Threading Dislocation in Vertical GaN Schottky Barrier Diodes, T. Fujita,T. Tanikawa,H. Fukushima,S. Usami,A. Tanaka,T. Suemitsu,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN2018), 2018/11/14
  • Challenge to MOVPE growth of N-polar InAlN film with high InN mole fraction, S. Kuboya,K. Omura,T. Tanikawa,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN2018), 2018/11/13
  • Nondestructive analysis of threading dislocations in HVPE-grown GaN crystals using multiphoton-excitation photoluminescence, T. Tanikawa,T. Yoshida,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN2018), 2018/11/13
  • 多光子励起フォトルミネッセンスによるHVPE成長GaN結晶の貫通転位と成長形態の非破壊観察, 谷川智之,松岡隆志, 第47回結晶成長国内会議 (JCCG-47), 2018/11/01
  • InGaN/GaNヘテロ構造のRF-MBE成長における格子緩和過程のその場観察:格子極性の影響, 谷川智之,山口智広,藤川誠司,佐々木拓生,高橋正光,松岡隆志, 第47回結晶成長国内会議 (JCCG-47), 2018/11/01
  • MOVPEによる窒素極性窒化物半導体成長, 松岡隆志,谷川智之,窪谷茂幸, 第47回結晶成長国内会議 (JCCG-47), 2018/10/31
  • 多光子励起過程を用いたGaN結晶の三次元蛍光イメージング, 谷川智之,松岡隆志, 第37回電子材料シンポジウム, 2018/10/10
  • 多光子励起顕微鏡を用いたHVPE成長GaN結晶の貫通転位と成長形態の非破壊観察, 谷川智之,松岡隆志, 日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会 第110回研究会・特別公開シンポジウム『紫外発光デバイスの最前線と将来展望』, 2018/09/27
  • 窒素極性GaN MIS-HEMTにおける逆バイアスアニールの効果, 末光哲也,Prasertsuk Kiattiwut,谷川智之,木村健司,窪谷茂幸,松岡隆志, 第79回応用物理学会秋季学術講演会, 2018/09/21
  • トップダウンナノテクノロジーで作製したIn0.3Ga0.7Nナノディスクにおける光励起キャリアの熱励起, 陳 亜鳳,木場隆之,高山純一,肥後昭男,谷川智之,寒川誠二,村山明宏, 第79回応用物理学会秋季学術講演会, 2018/09/20
  • MOVPE窒素極性成長による窒化物半導体の新展開, 松岡隆志,窪谷茂幸,谷川智之,加納聖也, 第79回応用物理学会秋季学術講演会, 2018/09/20
  • GaNの二光子励起フォトルミネッセンス測定における自己吸収の影響, 谷川智之,小島一信,秩父重英,松岡隆志, 第65回応用物理学会春季学術講演会, 2018/09/20
  • N極性InGaN/GaN量子井戸構造における構造の不均一性, 木口賢紀,白石貴久,兒玉裕美子,今野豊彦,谷川智之, 第79回応用物理学会秋季学術講演会, 2018/09/18
  • GaN結晶の多光子励起PL画像からの転位の3次元配置に関する数値情報抽出, 沓掛健太朗,谷川智之,松岡隆志,井上憲一, 第79回応用物理学会秋季学術講演会, 2018/09/18
  • 多光子励起フォトルミネッセンスによるHVPE成長GaNの選択成長過程と転位の伝搬の観察, 谷川智之,吉田丈洋,松岡隆志, 第79回応用物理学会秋季学術講演会, 2018/09/18
  • Characterization of Threading Dislocations in Thick GaN Films Using Multiphoton-Excitation Photoluminescence, T. Tanikawa,K. Ohnishi,T. Fujita,T. Matsuoka, International Symposium of Growth of III-Nitrides (ISGN-7), 2018/08/09
  • High-temperature carrier dynamics responsible for a non-radiative process in InGaN nanodisks fabricated by top-down nanotechnology, Y. Chen,T. Kiba,J. Takayama,A. Higo,T. Tanikawa,S. Samukawa,A. Murayama, 12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON 2018), 2018/07/10
  • Growth of Indium-Including Nitride Semiconductors, T. Matsuoka,S. Kuboya,T. Tanikawa, The 19th International Conference on Metalogranic Vapor Phase Epitaxy (ICMOVPE-XIX), 2018/06/07
  • Influence of Self Absorption in Two-Photon-Excitation Photoluminescence of GaN, T. Tanikawa,T. Fujita,K. Kojima,S. F. Chichibu,T. Matsuoka, The 19th International Conference on Metalogranic Vapor Phase Epitaxy (ICMOVPE-XIX), 2018/06/07
  • Reverse bias annealing effects in N-polar GaN/AlGaN/GaN MIS-HEMTs, T. Suemitsu,K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Matsuoka, Compound Semiconductor Week 2018, 2018/06/01
  • Nondestructive Analysis of Threading Dislocations in GaN by Multiphoton Excitation Photoluminescence, T. Tanikawa,T. Matsuoka, The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18), 2018/04/27
  • 多光子励起フォトルミネッセンス測定によるGaN結晶中の貫通転位の種別判定, 谷川智之,吉田丈洋,松岡隆志, 第65回応用物理学会春季学術講演会, 2018/03/19
  • 電子顕微鏡によるワイドギャップ材料のマルチスケール欠陥評価, 木口賢紀,白石貴久,今野豊彦,谷川智之, 第65回応用物理学会春季学術講演会, 2018/03/19
  • HVPE法による(000-1)面GaN基板上へのGaN厚膜成長, 加納聖也,谷川智之,松岡隆志,向井孝志, 第65回応用物理学会春季学術講演会, 2018/03/18
  • GaN成長に用いたScAlMgO4基板の再利用, 大西一生,窪谷茂幸,谷川智之,福田承生,松岡隆志, 第65回応用物理学会春季学術講演会, 2018/03/17
  • 多光子励起フォトルミネッセンスによるワイドギャップ半導体の三次元イメージング, 谷川智之,松岡隆志, 応用物理学会 第13回励起ナノプロセス研究会, 2018/01/21
  • ScAlMgO4基板上InGaN/GaN多重量子井戸構造の内部量子効率, 萩原千拡,岩渕拓也,窪谷茂幸,谷川智之,松岡隆志, 第134回東北大学金属材料研究所講演会, 2017/11/29
  • 多光子励起フォトルミネッセンス法によるGaNの三次元光物性評価, 谷川智之,松岡隆志, 第134回東北大学金属材料研究所講演会, 2017/11/29
  • 有機金属気相成長法によるN極性InGaNチャンネルHEMT構造の作製, 田中真二,プラスラットスック,キャッティウット,木村健司,谷川智之,末光哲也,松岡隆志, 第134回東北大学金属材料研究所講演会, 2017/11/29
  • N極性GaNHEMTの結晶成長と貫通転位の三次元イメージング, 谷川智之,松岡隆志, 応用物理学会 シリコンテクノロジー分科会 研究集会 テーマ 「窒化物半導体パワーデバイスの研究動向」, 2017/11/16
  • Improvement of heterointerface abruptness in N-polar InGaN/AlGaN/GaN heterostructures grown by metalorganic vapor phase epitaxy, S. Tanaka,K. Prasertsuk,T. Kimura,T. Tanikawa,T. Suemitsu,T. Matsuoka, 第36回電子材料シンポジウム, 2017/11/10
  • Three-Dimensional Imaging of Threading Dislocations in Thick GaN Films by Two-Photon-Excitation Photoluminescence, T. Tanikawa,K. Ohnishi,T. Matsuoka, 第36回電子材料シンポジウム, 2017/11/10
  • Internal quantum efficiency of InGaN/GaN multiple quantum wells grown on ScAlMgO4 substrate, C. Hagiwara,S. Kuboya,T. Tanikawa,T. Fukuda,T. Matsuoka, 第36回電子材料シンポジウム, 2017/11/09
  • 多光子励起フォトルミネッセンス法を用いたGaN結晶中の転位解析, 谷川智之,松岡隆志, ワイドギャップ半導体光・電子デバイス第162委員会 平成29年度特別事業企画 委員会100回記念特別公開シンポジウム 『ワイドギャップ半導体の基盤技術と将来展望』〜パワー半導体を中心として〜, 2017/10/26
  • N-polar GaN MIS-HEMTs on Small Off-cut Sapphire Substrate for Flat Interface, K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Suemitsu,T. Matsuoka, ワイドギャップ半導体光・電子デバイス第162委員会 平成29年度特別事業企画 委員会100回記念特別公開シンポジウム 『ワイドギャップ半導体の基盤技術と将来展望』〜パワー半導体を中心として〜, 2017/10/26
  • Three-dimensional Imaging of Threading Dislocations in GaN crystals by Multiphoton-Excitation Photoluminescence, T. Tanikawa,K. Ohnishi,T. Matsuoka, International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017), 2017/10/01
  • Reduction of Impurity Incorporation into MOVPE-grown GaN films on ScAlMgO4 Substrate, T. Iwabuchi,S. Kuboya,C. Hagiwara,T. Tanikawa,T. Hanada,T. Fukuda,T. Matsuoka, The 2017 International Conference on Solid State Devices and Materials (SSDM2017), 2017/09/20
  • Threshold Voltage Engineering of Recessed MIS-Gate N-polar GaN HEMTs, K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Suemitsu,T. Matsuoka, 第78回 応用物理学会秋季学術講演会, 2017/09/07
  • 多光子励起PL法によるGaN結晶の貫通転位の三次元イメージング, 谷川智之,大西一生,松岡隆志, 第78回 応用物理学会秋季学術講演会, 2017/09/07
  • N極性MgドープGaNの光電流DLTS評価, 鈴木 秀明,寺島勝哉,及川峻梧,野々田亮平,谷川智之,松岡隆志,岡本 浩, 第78回 応用物理学会秋季学術講演会, 2017/09/06
  • 二光子励起フォトルミネッセンスを用いて観測したGaN中の貫通転位の伝搬特性, 谷川智之,大西一生,加納聖也,向井孝志,松岡隆志, 第78回 応用物理学会秋季学術講演会, 2017/09/06
  • N極性n型GaN上Niショットキー特性に対するアニール効果の評価, 寺島勝哉,野々田亮平,正直花奈子,谷川智之,松岡隆志,岡本 浩, 平成29年度電気関係学会東北支部連合大会, 2017/08/24
  • Propagation and reduction of dislocation in ELO-grown GaN layer, T. Matsubara,K. Yukizane,T. Ezaki,S. Fujimoto,T. Tanikawa,R. Inomoto,N. Okada,K. Tadatomo, 29th International Conference on Defects in Semiconductors (ICDS 2017), 2017/08/01
  • Biexciton emission from single quantum-confined structures in N-polar (000-1) InGaN/GaN multiple quantum wells, K. Takamiya,S. Yagi,H. Yaguchi,H. Akiyama,K. Shojiki,T. Tanikawa,R. Katayama,T. Matsuoka, The 12th International Conference on Nitride Semiconductors (ICNS-12), 2017/07/26
  • Three-dimensional analysis of threading dislocation in HVPE-grown GaN using two-photon-excitation photoluminescence spectroscopy, T. Tanikawa,K. Ohnishi,M. Kanoh,T. Mukai,T. Matsuoka, The 12th International Conference on Nitride Semiconductors (ICNS-12), 2017/07/26
  • Evaluation of stacking faults free semipolar {11-22} GaN substrate grown by Na-flux point seed technique, N. Okada,Y. Ikeuchi,N. Morishita,T. Matsubara,T. Tanikawa,K. DoHun,M. Imanishi,M. Imade,Y. Mori,K. Tadatomo, The 12th International Conference on Nitride Semiconductors (ICNS-12), 2017/07/25
  • Hydride Vapor Phase Epitaxy of Thick GaN Layers on ScAlMgO4 Substrates and their Free-Standing by Self-Separation, K. Ohnishi,M. Kanoh,T. Tanikawa,S. Kuboya,T. Mukai,T. Matsuoka, The 12th International Conference on Nitride Semiconductors (ICNS-12), 2017/07/25
  • 多光子励起フォトルミネッセンスによるGaNの内部欠陥の三次元観察, 谷川智之,大西一生,藤田達也,加納聖也,向井孝志,松岡隆志, 第9回 ナノ構造・エピタキシャル成長講演会, 2017/07/14
  • 多光子顕微鏡を用いたワイドギャップ半導体結晶の三次元構造解析, 谷川智之, 第3回 東北大学若手研究者アンサンブルワークショップ, 2017/07/03
  • GaNのMOVPE成長用ScAlMgO4基板の裏面保護膜に関する研究, 岩渕拓也,窪谷茂幸,萩原千拡,谷川智之,福田承生,松岡隆志, 第133回東北大学金属材料研究所講演会, 2017/05/26
  • N極性InAlN薄膜の有機金属気相成長とそのXPS分析, 窪谷茂幸,大村和世,谷川智之,松岡隆志, 第133回東北大学金属材料研究所講演会, 2017/05/26
  • Growth of InGaN films on ZnO substrates via AlN protection layers by metalorranic vapor phase epitaxy, J. Yoo,R. Katayama,S. Kunoya,T. Tanikawa,T. Hanada,T. Matsuoka, 第133回東北大学金属材料研究所講演会, 2017/05/26
  • ScAlMg4の剥離特性を生かしたGaN自立基板の作製, 大西一生,加納聖也,谷川智之,窪谷茂幸,向井孝志,松岡隆志, 第133回東北大学金属材料研究所講演会, 2017/05/26
  • 二光子励起フォトルミネッセンス法を用いたGaNエピタキシャル膜中の貫通転位の三次元解析, 谷川智之,大西一生,加納聖也,向井孝志,松岡隆志, 第133回東北大学金属材料研究所講演会, 2017/05/26
  • N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE, K. Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,T. Suemitsu,T. Matsuoka, 電子情報通信学会, 2017/05/26
  • N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE, K. Prasertsuk,T. Tanikawa,T. Kimuram,T. Suemitsu,T. Matsuoka, Compound Semiconductor Week 2017, 2017/05/15
  • InGaN growth on AlN protection layer deposited ZnO substrates by metalorganic vapor phase epitaxy, J. Yoo,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, 2017 Annual Meeting of Excellent Graduate Schools for Materials Integration Center and Materials Science Center, 2017/03/21
  • Reduction of gate leakage current in N-polar GaN metal-insulator-semiconductor high electron mobility transistors, K. Prasertsuk,T. Tanikawa,T. Kimura,A. Miura,S. Kuboya,T. Suemitsu,T. Matsuoka, 2017 Annual Meeting of Excellent Graduate Schools for Materials Integration Center and Materials Science Center, 2017/03/21
  • 二光子励起フォトルミネッセンス法によるGaN中の貫通転位の三次元分布評価, 谷川智之,大西一生,加納聖也,向井孝志,松岡隆志, 第64回応用物理学会春季学術講演会, 2017/03/14
  • ハイドライド気相成長法によるScAlMgO4基板上へのGaN厚膜成長と自己剥離プロセス, 大西一生,加納聖也,窪谷茂幸,谷川智之,向井孝志,松岡隆志, 第64回応用物理学会春季学術講演会, 2017/03/14
  • N極性GaN HEMTsにおけるMIS構造導入によるリーク電流の低減, プラスラットスック,キャッティウット,三浦輝紀,田中真二,谷川智之,木村健司,窪谷茂幸,末光哲也,松岡隆志, 第64回応用物理学会春季学術講演会, 2017/03/14
  • MOVPE Growth of N-polar GaN/AlGaN/GaN Inverted HEMT Structures and Their Electrical Properties, K. Prasertsuk,T. Tanikawa,T. Kimura,A. Miura,S. Kuboya,T. Suemitsu,T. Matsuoka, 3rd Intensive Discussion on Growth of Nitride Semiconductor (IDGN-3), 2017/01/16
  • Novel Approach to Fabrication of Free-standing GaN Wafer for Transistors Enabling Energy Saving, T. Matsuoka,S. Kuboya,T. Tanikawa,T. Hanada,T. Fukuda, 10th Intern. Conf. on Polish Soc. for Crystal Growth (ICPSCG10), 2016/10/16
  • Control of Impurity Concentration of Undoped N-polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy, T. Tanikawa,S. Kuboya,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN 2016), 2016/10/02
  • Improvement of Emission Wavelength Homogeneity in N-polar (000-1) InGaN Grown by Metalorganic Vapor Phase Epitaxy, R. Nonoda,T. Tanikawa,K. Shojiki,S. Tanaka,S. Kuboya,R. Katayama,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN 2016), 2016/10/02
  • Ga-polar GaN Film Grown by MOVPE on Cleaved ScAlMgO4 (0001) Substrate with Nillimeter-scale Wide Terraces, T. Hanada,T. Iwabuchi,S. Kuboya,H. Tajiri,K. Inaba,T. Tanikawa,T. Fukuda,T. Matsuoka, 2016 European Materials Research Society (E-MRS) Fall Meeting, 2016/09/19
  • N 極性 n 型 GaN 上 Ni ショットキーダイオード特性の蒸着法依存性, 寺島 勝哉,野々田 亮平,正直 花奈子,谷川 智之,松岡 隆志,鈴木 秀明,岡本 浩, 第77回応用物理学会秋季学術講演会, 2016/09/13
  • NH3雰囲気で熱処理した ScAlMgO4のラマン分光評価, 山村 和也,蓮池 紀幸,播磨 弘,福田 承生,窪谷 茂幸,谷川 智之,花田 貴,松岡 隆志, 第77回応用物理学会秋季学術講演会, 2016/09/13
  • Ni/N 極性 p-GaN ショットキー電極界面の電流-電圧特性の温度依存性, 青木俊周,谷川智之,松岡隆志,塩島謙次, 第77回応用物理学会秋季学術講演会, 2016/09/13
  • Polarity in the Growth of Nitride Semiconductors, T. Matsuoka,T. Kimura,T. Tanikawa,S. Kuboya,T. Suemitsu, Collaborative Conf. on Crystal Growth (EMN 3CG), 2016/09/04
  • Localized emission from quantum-dot-like InGaN islands formed in N-polar InGaN/GaN multiple quantum wells, T. Tanikawa,K. Shojiki,R. Nonoda,S. Kuboya,R. Katayama,T. Matsuoka, 第35回電子材料シンポジウム, 2016/07/06
  • Dependence of group-III source ratio on photoluminescence of N-polar (000-1) InGaN grown by metalorganic vapor phase epitaxy, R. Nonoda,T. Tanikawa,K. Shojiki,T. Kimura,S. Tanaka,S. Kuboya,R. Katayama,T. Matsuoka, 第35回電子材料シンポジウム, 2016/07/06
  • Phonon mode assignments of ScAlMgO4 single crystal by polarized Raman scattering spectroscopy, K. Yamamura,N. Hasuike,H. Harima,T. Fukuda,S. Kuboya,T. Tanikawa,R. Katayama,T. Matsuoka, 第35回電子材料シンポジウム, 2016/07/06
  • MOVPE Growth of N-polar GaN/AlxGa1-xN/GaN Heterostructure on Small Off-cut Substrate for Flat Interface, K. Prasertsuk,S. Tanaka,T. Tanikawa,K. Shojiki,T. Kimura,A. Miura,R. Nonoda,F. Hemmi,S. Kuboya,R. Katayama,T. Suemitsu,T. Matsuoka, Compound Semiconductor Week 2016, 2016/06/26
  • Influence of Growth Conditions on Transport Properties in Undoped N-polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy, T. Tanikawa,K. Prasertsuk,A. Miura,S. Kuboya,R. Katayama,T. Matsuoka, The 4th International Conference on Light-Emitting Devices and Their Industrial Applications(LEDIA’16), 2016/05/18
  • N極性InGaN/GaN量子井戸の微視的構造・光学特性, 谷川智之,正直花奈子,野々田亮平,窪谷茂幸,片山竜二,松岡隆志,高宮健吾,矢口裕之,秋山英文, 第8回窒化物半導体結晶成長講演会, 2016/05/09
  • N 極性(000–1)InGaN における局所発光の III 族原料供給比依存性, 野々田 亮平,谷川 智之,正直 花奈子,木村 健司,窪谷 茂幸,片山 竜二,松岡 隆志, 第8回窒化物半導体結晶成長講演会, 2016/05/09
  • N極性InGaN/GaN LEDに形成されたInGaN微小島からの局所発光, 谷川 智之,正直 花奈子,片山 竜二,窪谷 茂幸,松岡 隆志, 第63回応用物理学会春季学術講演会, 2016/03/19
  • ScAlMgO4 基板上GaN の不純物混入の抑制, 矢原弘崇,岩渕拓也,窪谷茂幸,谷川智之,花田貴,片山竜二,福田承生,松岡隆志, 第63回応用物理学会春季学術講演会, 2016/03/19
  • InGaN Quantum Nanodisks by Fusion of Bio-nano-template and Neutral Beam Etching processes, A. Higo,C. Thomas,C. Y. Lee,T. Kiba,S. Chen,T. Tanikawa,S. Kuboya,R. Katayama,K. Shojiki,I. Yamashita,A. Murayama,S. Samukawa, 第63回応用物理学会春季学術講演会, 2016/03/19
  • Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metal-organic vapor phase epitaxy, J. Yoo,K. Shojiki,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, Japan-Russia Joint Seminar "Advanced Materials Synthesis Process and Nanostructure", 2016/03/18
  • Two-dimensional electron gas in N-polar GaN/AlGaN/GaN heterostructures grown by metalorganic vapor phase epitaxy, K. Prasertsuk,S. Tanaka,T. Tanikawa,K. Shojiki,T. Kimura,A. Miura,R. Nonoda,F. Hemmi,S. Kuboya,R. Katayama,T. Suemitsu,T. Matsuoka, Japan-Russia Joint Seminar "Advanced Materials Synthesis Process and Nanostructure", 2016/03/18
  • Electrical properties of GaN films on ScAlMgO4 substrates grown by MOVPE, T. Iwabuchi,H. Yahara,S. Kuboya,T. Tanikawa,T. Hanada,R. Katayama,T. Matsuoka, Japan-Russia Joint Seminar "Advanced Materials Synthesis Process and Nanostructure", 2016/03/18
  • InGaN/GaN太陽電池の格子極性と発電特性, 谷川智之,川島静人,正直花奈子,窪谷茂幸,片山竜二,松岡隆志, 第7回薄膜太陽電池セミナー, 2016/03/13
  • N極性(000-1)窒化物半導体混晶InGaNの結晶成長表面と発光素子応用, 正直花奈子,高宮健吾,谷川智之,花田貴,野々田良平,窪谷茂幸,秋山英文,矢口裕之,片山竜二,松岡隆志, 平成27年度日本表面科学会東北・北海道支部講演会, 2016/03/09
  • N極性(000-1)p型GaNのMOVPE成長における原料供給比の正孔濃度への影響, 野々田亮平,正直花奈子,谷川智之,窪谷茂幸,片山竜二,松岡隆志, 第70回東北支部学術講演会, 2015/12/03
  • ScAlMgO4基板上SiドープGaNの電気伝導特性評価, 矢原弘崇,岩渕拓也,窪谷茂幸,谷川智之,花田 貴,片山竜二,福田承生,松岡隆志, 第70回東北支部学術講演会, 2015/12/03
  • Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000-1) p-type GaN grown by MOVPE, R. Nonoda,K. Shojiki,T. Tanikawa,S. Kuboya,R. Katayama,T. Matsuoka, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), 2015/11/08
  • Homogeneity improvement of N-polar (000-1) InGaN/GaN multiple quantum wells by changing substrate off-cut-angle direction, K. Shojiki,T. Hanada,T. Tanikawa,Y. Imai,S. Kimura,R. Nonoda,S. Kuboya,R. Katayama,T. Matsuoka, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), 2015/11/08
  • Polarity control of GaN grown on PLD-AlN/GaN templates by MOVPE, J. Yoo,K. Shojiki,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), 2015/11/08
  • Microscopic structure of N-polar (000-1) InGaN/GaN multiple quantum wells and light-emitting diodes, K. Shojiki,T. Tanikawa,T. Hanada,Y. Imai,S. Kimura,R. Nonoda,S. Kuboya,R. Katayama,T. Matsuoka, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), 2015/11/08
  • Large Stokes shift in N-polar (0001) InGaN/GaN multiple-quantum-well light-emitting diodes, T. Tanikawa,K. Shojiki,R. Katayama,S. Kuboya,T. Matsuoka, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), 2015/11/08
  • Direct measurement of polarization-induced electric fields in InGaN/GaN light-emitting diodes, T. Tanikawa,R. Katayama,K. Shojiki,S. Kuboya,T. Matsuoka, 6th RIEC-RIE Meeting on Research Collaboration in Photonics, 2015/10/26
  • −c 面 InGaN/GaN 量子井戸の MOVPE 成長における相純度制御, 片山竜二,正直花奈子,谷川智之,窪谷茂幸,松岡隆志,矢口裕之,尾鍋研太郎, 第45回結晶成長国内会議(NCCG-45), 2015/10/19
  • Electrical Characteristics of N-polar p-type GaN Schottky Contacts, T. Aoki,T. Tanikawa,R. Katayama,T. Matsuoka,K. Shiojima, 2015 International Conference on Solid State Devices and Materials (SSDM2015), 2015/09/28
  • 変調分光法によるInGaN/GaN LEDの内部電界の観測, 谷川 智之,片山 竜二,正直 花奈子,窪谷 茂幸,松岡 隆志,本田 善央,天野 浩, 第75回応用物理学会秋季学術講演会, 2015/09/17
  • サファイア基板上MOVPE成長N極性面(000-1)InGaNを用いた赤・緑・青色発光ダイオードの作製, 正直 花奈子,崔 正焄,谷川 智之,窪谷 茂幸,花田 貴,片山 竜二,松岡 隆志, 第75回応用物理学会秋季学術講演会, 2015/09/17
  • MOVPE成長N極性(000-1)p型GaNの正孔濃度に与えるMg/Ga・V/III原料比の影響, 野々田 亮平,正直 花奈子,谷川 智之,窪谷 茂幸,片山 竜二,松岡 隆志, 第76回 応用物理学会秋季学術講演会, 2015/09/13
  • Two-Dimensional Electron Gas in N-polar GaN/AlGaN/GaN Heterostructures Grown by Metalorganic Vapor Phase Epitaxy, K. Prasertsuk,T. Tanikawa,K. Shojiki,T. Kimura,A. Miura,F. Hemmi,S. Kuboya,T. Suemitsu,R. Katayama,T. Matsuoka, 2nd 2015 Tohoku Univ.-MIT Student Meeting on Research Collaboration in Photonics and Electronics, 2015/08/27
  • N極性p形ショットキー接触の電気的特性の評価, 青木俊周,谷川智之,片山竜二,松岡隆志,塩島謙次, 電子情報通信学会, 2015/07/24
  • Polarity-controlled MOVPE growth of GaN on PLD-AlN templates, J. Yoo,K. Shojiki,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, 第34回電子材料シンポジウム, 2015/07/15
  • Design of the Transverse Quasi-Phase Matched AlN Waveguides for Deep-UV Second Harmonic Generation, Y. Mitani,R. Katayama,J. Yoo,K. Shojiki,T. Tanikawa,S. Kuboya,T. Matsuoka, 第34回電子材料シンポジウム, 2015/07/15
  • Effects of V/III source ratio on the hole concentration of N-polar (000-1) p-type GaN grown by MOVPE, R.Nonoda,K.Shojiki,T.Tanikawa,S.Kuboya,R.Katayama,T.Matsuoka, 第34回電子材料シンポジウム, 2015/07/15
  • Surface energy and facet formation in InN films grown by pressurized-reactor MOVPE, A. Kusaba,Y. Kangawa,S. Krukowski,T. Kimura,T. Tanikawa,R. Katayama,T. Matsuoka,K. Kakimoto, 第34回電子材料シンポジウム, 2015/07/15
  • Possibility of N-Polarity in Applications for GaN-based Devices, T. Matsuoka,K. Shojiki,T. Kimura,T. Tanikawa,R. Katayama, the Compound Semiconductor Week 2015, the common venue for the 42nd Intern. Symp. on Comp. Semicond. and the 27th Intern. Conf. Indium Phosphide and Related Mat., 2015/06/28
  • 窒化物半導体の窒素極性面成長におけるin situ表面反射率測定, 谷川智之,逢坂崇,正直花奈子,窪谷茂幸,片山竜二,松岡隆志,三宅秀人, CVD反応分科会主催 第23回シンポジウム「窒化物半導体の成長技術とメカニズム理解(ノーベル賞受賞記念)」, 2015/05/22
  • N極性(000-1)GaNの選択MOVPE成長における横方向成長の促進, 谷川智之,逢坂崇,正直花奈子,窪谷茂幸,片山竜二,松岡隆志,三宅秀人, 第7回窒化物半導体結晶成長講演会, 2015/05/07
  • MOVPE成長N極性(000-1)p型GaNの正孔濃度に与えるV/III原料比の影響, 野々田良平,正直花奈子,谷川智之,窪谷茂幸,片山竜二,松岡隆志, 第7回窒化物半導体結晶成長講演会, 2015/05/07
  • Polarity control of MOVPE-grown GaN on AlN/GaN templates, J. H. Yoo,K. Shojiki,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, 第7回窒化物半導体結晶成長講演会, 2015/05/07
  • 横型擬似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計, 三谷悠貴,片山竜二,劉陳燁,正直花奈子,谷川智之,窪谷茂幸,松岡隆志, 第7回窒化物半導体結晶成長講演会, 2015/05/07
  • 3C-SiC/Si基板上InGaN/GaN縦型発光ダイオード, 谷川智之,生川満久,窪谷茂幸,片山竜二,松岡隆志,川村啓介, 第7回窒化物半導体結晶成長講演会, 2015/05/07
  • MOVPE成長したScAlMgO4基板上GaNの構造特性, 岩渕拓也,窪谷茂幸,矢原弘崇,谷川智之,花田貴,片山竜二,福田承生,松岡隆志, 第7回窒化物半導体結晶成長講演会, 2015/05/07
  • N極性GaN系光デバイスの作製と分極電界の直接観測, 谷川智之, ~国際光年記念式典~国際光年記念シンポジウム, 2015/04/22
  • ±c面GaNの表面熱的安定性に関する研究, 岡田 俊祐,三宅 秀人,平松 和政,逢坂 崇,谷川 智之,松岡 隆志, 第62回応用物理学会春季学術講演会, 2015/03/11
  • N極性p形GaNショットキー電極の電気的特性の評価, 青木俊周,谷川智之,片山竜二,松岡隆志,塩島謙次, 第62回応用物理学会春季学術講演会, 2015/03/11
  • MOVPE成長N極性(0001)InGaN多重量子井戸構造と発光ダイオードの構造・光学特性, 正直 花奈子,崔 正焄,谷川 智之,窪谷 茂幸,花田 貴,片山 竜二,松岡 隆志, 第62回応用物理学会春季学術講演会, 2015/03/11
  • N極性(0001)GaNのMOVPE選択成長における貫通転位密度の低減, 逢坂 崇,谷川 智之,木村 健司,正直 花奈子,窪谷 茂幸,片山 竜二,松岡 隆志,三宅 秀人, 第62回応用物理学会春季学術講演会, 2015/03/11
  • オール窒化物半導体による白色LEDの開発に向けて, 松岡隆志,正直花奈子,谷川智之,窪谷茂幸,片山竜二, 日本学術振興会 光電相互変換第125委員会 EL分科会第46回研究会, 2015/02/04
  • N 極性(000-1)GaN のMOVPE 選択成長における結晶形態変化, 逢坂崇,谷川智之,木村健司,正直花奈子,窪谷茂幸,片山竜二,松岡隆志, 第69回 東北支部学術講演会, 2014/12/04
  • MOVPE 法による可視光全域波長の発光を有するN 極性(000-1)InGaN 発光ダイオードの作製, 正直花奈子,崔正焄,谷川智之,窪谷茂幸,花田貴,片山竜二,松岡隆志, 第69回 東北支部学術講演会, 2014/12/04
  • N-polar Solar Cells in Nitride Semiconductors with Potential of High Efficiency, T. Tanikawa,J. H. Choi,K. Shojiki,R. Katayama,T. Matsuoka, The 6th World Conferenceon Photovoltaic Energy Conversion (WCPEC-6), 2014/11/23
  • Crystallographic Polarity in Nitride Semicondcutors, T. Matsuoka,T. Tanikawa,T. Kimura,K. Shojiki,T. Iwabuchi,R. Katayama, 2014 Intern.Symp. Crystal Growth and Crystal Technol, 2014/11/12
  • N極性(000-1)InGaN/GaN多重量子井戸構造のMOVPE成長と発光ダイオード作製, 正直花奈子,崔正焄,谷川智之,窪谷茂幸,花田貴,片山竜二,松岡隆志, 第44回結晶成長国内会議(NCCG-44), 2014/11/06
  • Control of GaN growth orientation by MOVPE, T. Tanikawa,K. Shojiki,T. Aisaka,T. Kimura,S. Kuboya,T. Hanada,T. Matsuoka,Y. Honda,H. Amano, 2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2), 2014/10/29
  • Overview on Crystallographic Polarization, T. Matsuoka,T. Tanikawa,T. Kimura,K. Shojiki,T. Iwabuchi,R. Katayama, 2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2), 2014/10/29
  • Modulation Spectroscopic Investigation on Internal Electric Fields in InGaN/GaN Light-Emitting Diodes, T. Tanikawa,R. Katayama,K. Shojiki,S. Kuboya,T. Matsuoka,Y. Honda,H. Amano, International Workshop on Nitride Semiconductors (IWN2014), 2014/08/24
  • Accurate Determination of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by Spectroscopic m-line Technique, R. Katayama,N. Yoshinogawa,K. Shojiki,T. Tanikawa,S. Kuboya,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN2014), 2014/08/24
  • Emission Wavelength Extension of Light Emitting Diode Using MOVPE-Grown N-Polar (000-1) InGaN, K. Shojiki,J.H. Choi,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN2014), 2014/08/24
  • MOVPE Growth of GaN on ScAlMgO4 Substrate, T. Iwabuchi,S. Kuboya,T. Tanikawa,R. Katayama,T. Hanada,A. Minato,T. Fukuda,T. Matsuoka, International Workshop on Nitride Semiconductors (IWN2014), 2014/08/24
  • Crystallographic Polarity in Nitride Semiconductors and its Device Applications, T. Matsuoka,T. Tanikawa,T. Kimura,K. Shojiki,R. Katayama, 4th RIEC-RLE Meeting, 2014/08/24
  • N 極性面(000-1)InGaN による発光ダイオードの長発光波長化, 正直花奈子,崔正焄,谷川智之,窪谷茂幸,花田貴,片山竜二,松岡隆志, 第6回窒化物半導体研究会, 2014/07/25
  • 様々な極性面GaN上へのInGaNの結晶成長, 谷川智之,正直花奈子,Jung-Hun Choi,窪谷茂幸,片山竜二,松岡隆志,久志本真希,本田善央,天野浩, 第6回窒化物半導体研究会, 2014/07/25
  • ZnAl2O4 interlayer for suppressing impurity out-diffusion in HVPE growth of GaN on ZnO substrate, J. Yoo,J. Chang,J. Lee,S. Choi,H. Lee,S. Kim,T. Tanikawa,R. Katayama,T. Matsuoka, 第33回電子材料シンポジウム, 2014/07/09
  • MOVPE growth of GaN on ScAlMgO4 Substrates, T. Iwabuchi,S. Kuboya,T. Tanikawa,K. Shojiki,R. Katayama,T. Hanada,A. Minato,T.Fukuda,T. Matsuoka, 第33回電子材料シンポジウム, 2014/07/09
  • Investigation of surface morphology of -c GaN crystals grown by selective area metalorganic vapor phase epitaxy, T. Aisaka,T. Tanikawa,T. Kimura,K. Shojiki,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, 第33回電子材料シンポジウム, 2014/07/09
  • Suppression of metastable-phase inclusion in MOVPE-grown N-polar (000-1) InGaN/GaN multiple quantum wells, K. Shojiki,J. H. Choi,T. Iwabuchi,N. Usami,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, 第33回電子材料シンポジウム, 2014/07/09
  • Fabrication of red, green, and blue light emitting diodes using MOVPE-grown N-polar (000-1) InGaN on sapphire substrate, K. Shojiki,J. H. Choi,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, 第33回電子材料シンポジウム, 2014/07/09
  • Stimulated emission properties of semipolar (1-101) InGaN micro cavity structure on patterned (001) Si substrate, M. Kushimoto,T. Tanikawa,Y. Honda,H. Amano, 第33回電子材料シンポジウム, 2014/07/09
  • Investigation of modal dispersion in nonlinear optical TiOx/GaN waveguide by m-line spectroscopy, N. Yoshinogawa,R. Katayama,K. Shojiki,T. Tanikawa,S. Kuboya,T. Matsuoka, 第33回電子材料シンポジウム, 2014/07/09
  • 窒化物半導体において高効率を望める 窒素極性太陽電池, 谷川智之,崔正焄,正直花奈子,片山竜二,松岡隆志, 第 11回 「次世代の太陽光発電システム」シンポジウム, 2014/07/03
  • Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy, T. Tanikawa,J. H. Choi,K. Shojiki,S. Kuboya,R. Katayama,T. Matsuoka, Conference on LED and Its Industrial Application (LEDIA '14), 2014/07/01
  • Suppression of Metastable-Phase Inclusion in MOVPE-Grown N-Polar (000-1) InGaN/GaN Multiple Quantum Wells, K. Shojiki,J. H. Choi,T. Iwabuchi,N. Usami,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, Conference on LED and Its Industrial Application (LEDIA '14), 2014/04/22
  • Effect of indium surfactant on MOVPE growth of N-polar GaN, T. Aisaka,T. Tanikawa,T. Kimura,K. Shojiki,T. Iwabuchi,T. Hanada,R. Katayama,T. Matsuoka, 8th International Symposium on Medical, Bio- and Nano-Electronics, 2014/04/22
  • MOVPE成長 -c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制, 第61回応用物理学会春季学術講演会, 2014/03/17
  • ScAlMgO4基板上におけるGaNのMOVPE成長, 第61回応用物理学会春季学術講演会, 2014/03/17
  • c面ScAlMgO4基板上にMOVPE成長したGaNの異常分散X線回折による極性判定, 第61回応用物理学会春季学術講演会, 2014/03/17
  • c面Al2O3基板上にMOVPE成長したGaNの異常分散X線回折による極性判定, 第61回応用物理学会春季学術講演会, 2014/03/17
  • Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire, N. Yoshinogawa,T. Iwabuchi,K. Shojiki,T. Kimura,T. Tanikawa,R. Katayama,T. Matsuoka, 8th International Symposium on Medical, Bio- and Nano-Electronics, 2014/03/05
  • Investigation and Suppression of Metastable-phase Inclusion in MOVPE-grown –c-plane InGaN/GaN Multiple Quantum Wells, K. Shojiki,J. H. Choi,T. Iwabuchi,N. Usami,T. Tanikawa,S. Kuboya,T. Hanada,R. Katayama,T. Matsuoka, KINKEN-WAKATE 2013 10th Materials Science School for Young Scientists, 2014/03/05
  • MOVPE成長 –c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制, 第68回東北支部学術講演会, 2013/12/05
  • Investigation and Suppression of Metastable-phase Inclusion in MOVPE-grown –c-plane InGaN/GaN Multiple Quantum Wells, KINKEN-WAKATE 2013 10th Materials Science School for Young Scientists, 2013/11/21
  • Progress in Research on InN for D-WDM Systems, T. Matsuoka,T. Kimura,T. Iwabuchi,T. Hanada,T. Tanikawa,R. Katayama, Resarch Institute of Electronic Communication- Research Laboratory of Electronics (RIEC-RLE) Meeting in Boston, 2013/09/30
  • ヒロック形成にともなうm面InGaN薄膜のIn組成分布観察, 第74回応用物理学会学術講演会, 2013/09/16
  • The improvement of N-polar GaN surface during MOVPE growth with indium surfactant, 2013 JSAP-MRS Joint Symposia, 2013/09/16
  • Effect of c-plane Sapphire Substrate Miscut-angle on Indium Content of MOVPE-grown N-polar InGaN, 2013 JSAP-MRS Joint Symposia, 2013/09/16
  • Enhancement of Surface Migration by Mg Doping in the Metalorganic Vapor Phase Epitaxy of (000-1) GaN/sapphire, 2013 JSAP-MRS Joint Symposia, 2013/09/16
  • Nonlinear Optical Application of Periodic Polarity-inverted GaN Waveguide, 2013 JSAP-MRS Joint Symposia, 2013/09/16
  • Anisotropic Optical Properties of Semipolar (1-101) InGaN/GaN Multiple Quantum Wells on a Patterned Si Substrate, 2013 JSAP-MRS Joint Symposia, 2013/09/16
  • Influence of Mg-Doping on the Surface Morphology of (000-1) GaN/Sapphire Grown by Metalorganic Vapor Phase Epitaxy, 10th International Conference on Nitride Semiconductors(ICNS-10), 2013/08/25
  • Evaluation and Solution of Metastable-Phase Inclusion in MOVPE-grown −c-plane InGaN/GaN Multiple Quantum Wells, 10th International Conference on Nitride Semiconductors(ICNS-10), 2013/08/25
  • Light Emission Polarization Properties of (1-101) InGaN/GaN MQWs with Cavity Structure on Patterned Si Substrate, 10th International Conference on Nitride Semiconductors(ICNS-10), 2013/08/25
  • Optical properties of semipolar (1-101) InGaN/GaN multiple quantum wells with cavity structure on patterned Si (001) substrate, EDISON18 : The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 2013/07/22
  • Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire, 第32回電子材料シンポジウム, 2013/07/10
  • Effect of indium surfactant on MOVPE growth of N-polar GaN, 第32回電子材料シンポジウム, 2013/07/10
  • Observation of Phase Separation on m-plane InGaN Films with Micro-vicinal surface by Micro-beam XRD, 第32回電子材料シンポジウム, 2013/07/10
  • Stimulated emission by photo excitation in (1-101) InGaN/GaN multiple quantum well with cavity structure on a patterned Si substrate, 第32回電子材料シンポジウム, 2013/07/10
  • Lattice-matching Substrates to InGaAlN and its Epitaxial Growth, 2nd International Symposium on Single Crystals and Wafers, 2013/06/25
  • 窒化物半導体フォトニックナノ構造の量子光学応用, 第5回 窒化物半導体結晶成長講演会, 2013/06/21
  • Crystal growth of InGaN on GaN/Sapphire template by high pressure MOVPE, The 40th International Symposium on Compound Semiconductors (ISCS 2013), 2013/05/19
  • Improvement of Surface Morphology in (000-1) GaN/Sapphire Grown by MOVPE with Indium Surfactant, The 40th International Symposium on Compound Semiconductors (ISCS 2013), 2013/05/19
  • 発光材料としての窒化物半導体の役割, 第三回先端フォトニクスシンポジウム, 2013/04/26
  • MOVPE法による窒素極性面InxGa1-xNの結晶成長とデバイス応用, 第三回先端フォトニクスシンポジウム, 2013/04/26
  • Improvement of surface morphology in (000-1) GaN/Sapphire grown by MOVPE with indium surfactant, Conference on LED and its industrial application '13 (LEDIA '13), 2013/04/23
  • MOVPE 成長N 極性InGaN におけるIn 組成のc 面サファイア基板微傾斜角依存性, 第60回応用物理学会春季学術講演会, 2013/03/27
  • (000-1)GaNのMOVPE成長におけるステップフロー成長の促進, 第60回応用物理学会春季学術講演会, 2013/03/27
  • サファイア基板上GaN薄膜のMOVPE成長挙動の格子極性依存性, 第60回応用物理学会春季学術講演会, 2013/03/27
  • Effect of N-polar Growth in In-incorporation into Nitride Semiconductors, 2nd IMR & KMU Joint Workshop, 2013/02/18
  • Fabrication of semipolar/nonpolar GaN on patterned silicon substrate for optical device application, 2nd IMR & KMU Joint Workshop, 2013/02/18
  • Comparison of growth behavior in thick InGaN on (000-1) and (0001) GaN/Sapphire by metalorganic vapor phase epitaxy, 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2013), 2013/01/28
  • Crystal growth of semipolar/nonpolar GaN on patterned silicon substrates by metalorganic vapor phase epitaxy, Collaborative Conference on Crystal Growth (3CG), 2012/12/11
  • MOVPE成長(000-1) GaNのステップフロー成長の促進, 第67回応用物理学会東北支部学術講演会, 2012/12/06
  • MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性, 第67回応用物理学会東北支部学術講演会, 2012/12/06
  • サファイア基板上GaN薄膜の有機金属気相成長初期過程における表面モフォロジーの格子極性依存性, 第67回応用物理学会東北支部学術講演会, 2012/12/06
  • (0001)面、(000-1)面GaN上へMOVPE成長したInGaNの表面モフォロジーとIn取り込み, 第67回応用物理学会東北支部学術講演会, 2012/12/06
  • Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-incorporation into InGaN Grown by MOVPE, International Conference on Nano Science and Nano Technology (ICNST 2012), 2012/11/08
  • Growth of GaN on (111) Si substrates via a reactive sputter-deposited AlN intermediate layer, International Workshop on Nitride Semiconductors 2012, 2012/10/14
  • Comparison of crystalline quality in InGaN grown on (000-1) and (0001)GaN/Sapphire by metalorganic vapor phase epitaxy, International Workshop on Nitride Semiconductors 2012, 2012/10/14
  • Study of In-composition of faceted InGaN on m-plane GaN substrate using high-resolution microbeam XRD, International Workshop on Nitride Semiconductors 2012, 2012/10/14
  • Optical polarization properties in semipolar (1–101) InGaN/GaN multiple quantum well on a patterned Si Substrate, International Workshop on Nitride Semiconductors 2012, 2012/10/14
  • Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN, International Workshop on Nitride Semiconductors 2012, 2012/10/14
  • InGaN growth on GaN/Sapphire by high pressure MOVPE, International Workshop on Nitride Semiconductors 2012, 2012/10/14
  • Violet second harmonic generation from polarityinverted GaN waveguides, International Workshop on Nitride Semiconductors 2012, 2012/10/14
  • (0001)および(000-1)面GaN上へMOVPE成長したInGaNの結晶品質比較, 第73回応用物理学会学術講演会, 2012/09/11
  • 反応性スパッタリング法によるAlN中間層を用いたSi基板上GaN成長, 第73回応用物理学会学術講演会, 2012/09/11
  • 加工Si基板上(1-101)InGaN/GaN MQWストライプ結晶の光学利得, 第73回応用物理学会学術講演会, 2012/09/11
  • Violet-colored enhanced second harmonic generation from periodic polarity-inverted GaN waveguide, 第31 回 電子材料シンポジウム, 2012/07/11
  • Optical and crystalline properties of InGaN/GaN MQWs on (1-101) GaN, 第31 回 電子材料シンポジウム, 2012/07/11
  • Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101) GaN/Si, 第31 回 電子材料シンポジウム, 2012/07/11
  • High pressure InGaN growth by MOVPE, 第31 回 電子材料シンポジウム, 2012/07/11
  • AlN/air distributed Bragg reflector using GaN sublimation from micro-cracks of AlN, 第31 回 電子材料シンポジウム, 2012/07/11
  • How to improve performance of In-rich InGaN LEDs ?, 16th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XVI), 2012/05/20
  • Fabrication of selective-area AlN/air reflector by GaN sublimation in the growth chamber, 16th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XVI), 2012/05/20
  • Si基板上半極性面(1-101)GaNストライプ上InGaN/GaN多重量子井戸構造の偏光特性, 信学会電子デバイス(ED)研究会, 2012/05/17
  • 加圧 MOVPE による InGaN 結晶成長, 第4回 窒化物半導体結晶成長講演会 (プレIWN2012), 2012/04/27
  • 加圧MOVPE法によるInxGa1-xN 結晶成長, 第59回 応用物理学関係連合講演会, 2012/03/15
  • GaNの昇華を用いた選択領域AlN/Air反射構造の作製, 第59回 応用物理学関係連合講演会, 2012/03/15
  • Reduction of dislocations and residual stress in GaN grown on patterned Si substrate, 11th Akasaki Research Center Symposium, 2011/12/09
  • 加工Si基板上(1-101)InGaN/GaN MQWストライプの偏光特性, 第72回 応用物理学会学術講演会, 2011/08/29
  • AlN/GaN多層膜反射鏡の高反射率化, 第72回 応用物理学会学術講演会, 2011/08/29
  • (1-101)GaN/Si 上InGaN 厚膜のMOVPE 成長, 第72回 応用物理学会学術講演会, 2011/08/29
  • Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate, 9th International Conference on Nitride Semiconductors (ICNS-9), 2011/07/10
  • In Situ Void Formation Technique Using AlN Shell Structure on GaN Stripes Grown on C-sapphire Substrates, 9th International Conference on Nitride Semiconductors (ICNS-9), 2011/07/10
  • Growth of AlInN by raised-pressure metalorganic vapor phase epitaxy, 9th International Conference on Nitride Semiconductors (ICNS-9), 2011/07/10
  • Lattice relaxation in semipolar (1-101)InGaN/GaN on silicon substrates, 第30 回 電子材料シンポジウム, 2011/06/29
  • Reduction of residual stress of GaN on Si(111) substrates using void formation techniques, 第30 回 電子材料シンポジウム, 2011/06/29
  • 加圧MOVPE 法を用いたAlInN の結晶成長, 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第3回窒化物半導体結晶成長講演会「窒化物半導体の応用・評価および結晶成長基礎」, 2011/06/17
  • 加圧MOVPE 法によるInGaN/GaN MQW 構造のIn 組成揺らぎの改善, 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第3回窒化物半導体結晶成長講演会「窒化物半導体の応用・評価および結晶成長基礎」, 2011/06/17
  • 組成および井戸層厚を変調させたInGaN 擬周期構造に関する研究, 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第3回窒化物半導体結晶成長講演会「窒化物半導体の応用・評価および結晶成長基礎」, 2011/06/17
  • HVPE 成長を用いた微細加工Si 基板上半極性GaN 自立基板の作製, 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第3回窒化物半導体結晶成長講演会「窒化物半導体の応用・評価および結晶成長基礎」, 2011/06/17
  • Internal quantum efficiency of nitride-basedlight emitting devices, 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011), 2011/05/22
  • Reduction of residual stress of GaN on Si(111) substrates using void formation techniques, 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011), 2011/05/22
  • AlGaN系紫外発光素子の通電特性, 信学会電子デバイス(ED)研究会, 2011/05/19
  • (1-101)GaN/Si上InGaN厚膜のMOVPE成長, 信学会電子デバイス(ED)研究会, 2011/05/19
  • High temperature MOVPE of AlGaN for UV/DUV devices and increased pressure MOVPE of InGaN for green/yellow devices, E-MRS 2011 Spring Meeting, 2011/05/09
  • IQE and EQE of the nitride-based UV/DUV LEDs, CLEO:2011, 2011/05/01
  • (111)Si 基板上GaN のボイドを用いた残留応力低減, 第58回 応用物理学関係連合講演会, 2011/03/24
  • 加圧MOVPE 法を用いたAlInN の結晶成長, 第58回 応用物理学関係連合講演会, 2011/03/24
  • FTIR Spectra and LVMs in a Carbon Doped (1-101)GaN Grown on a (001)Si Substrate by MOVPE, 3nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011), 2011/03/06
  • Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate, SPIE Photonics West, 2011/01/22
  • 加圧MOVPE法を用いたInGaN結晶成長, 応用物理学会結晶工学分科会主催2010年・年末講演会 「エレクトロニクスの将来ビジョン~発展史マップとアカデミックロードマップ~&若手ポスター発表会」, 2010/12/17
  • マイクロファセットGaNストライプ上へのInGaN選択成長, 応用物理学会結晶工学分科会主催2010年・年末講演会 「エレクトロニクスの将来ビジョン~発展史マップとアカデミックロードマップ~&若手ポスター発表会」, 2010/12/17
  • Optical Properties of (1-101) InGaN/GaN MQW Stripe Laser Structure on a Si Substrate, International Workshop on Nitride semiconductors (IWN2010), 2010/09/19
  • Selective MOVPE Growth of InGaN/GaN MQW on Microfacet GaN Stripes, International Workshop on Nitride semiconductors (IWN2010), 2010/09/19
  • 加工Si基板上(1-101)GaNの不純物取り込み, 第71回 応用物理学会学術講演会, 2010/09/14
  • 半極性面GaN ストライプ上InGaN/GaN MQW のMOVPE 選択成長(II), 第71回 応用物理学会学術講演会, 2010/09/14
  • Si基板上(1-101)InGaN/GaN MQWストライプレーザー構造の光学特性, 第71回 応用物理学会学術講演会, 2010/09/14
  • Effect of lateral vapor-phase diffusion during the selective growth of InGaN/GaN MQW on semi-polar and non-polar GaN stripes, Third International Symposium on Growth of III-Nitrides (ISGN-3), 2010/06/04
  • 加工Si基板上への非極性GaN選択成長, 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」, 2010/05/14
  • 半極性、非極性GaNストライプ上InGaN/GaN MQWのMOVPE成長, 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」, 2010/05/14
  • 加工Si 基板上非極性InGaN/GaN MQW のMOVPE 選択成長, 第57回 応用物理学関係連合講演会, 2010/03/17
  • Recent development of nitride-based micro- and nano-rod structure on Si and their application to high performance light emitters, 9th International Akasaki Research Center Symposium, 2010/03/12
  • Crystal growth of GaN on etched Si substrate, 9th International Akasaki Research Center Symposium, 2010/03/12
  • Dislocation Decrease of Semi-polar GaN on Si Substrate by Selective MOVPE, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2010), 2010/03/07
  • Infrared Reflectance Spectra of (1-101)GaN Grown on a (001)Si Substrate, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2010), 2010/03/07
  • 選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製, 信学会電子デバイス(ED)研究会, 2010/02/22
  • HVPE Growth of A-Plane GaN on a GaN Template (110)Si Substrate, 8th International Conference on Nitride Semiconductors (ICNS-8), 2009/10/18
  • 選択MOVPE法を用いたSi基板上(11-22)GaNの転位低減, 第70回 応用物理学会学術講演会, 2009/09/08
  • Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission properties under photo-excitation, The 14th International Conference on Modulated Semiconductor structures (MSS-14), 2009/07/19
  • HVPE growth of a-plane GaN on GaN template (110) Si substrate, 第28 回 電子材料シンポジウム, 2009/07/08
  • GaN/InGaN hetero growth on (1-101) and (11-22) GaN on Si substrate, 第28 回 電子材料シンポジウム, 2009/07/08
  • (111)Si上InGaN/GaN ストライプ構造の光学特性 (II), 第56回 応用物理学関係連合講演会, 2009/03/30
  • HVPE法を用いた加工(110)Si基板上(11-20)GaNの厚膜成長, 第56回 応用物理学関係連合講演会, 2009/03/30
  • Crystal growth of a-plane GaN on a patterned (110)Si substrate by selective MOVPE, First International Symposium on Advanced Plasma Science and its Applications (ISPlasma2009), 2009/03/08
  • Selective Growth of (1-101)GaN on Large Size Si Substrate with SiO2 Mask Deposited by Oblique EB Evaporation, First International Symposium on Advanced Plasma Science and its Applications (ISPlasma2009), 2009/03/08
  • Optical properties of InGaN/GaN stripe structure grown on (111)Si, First International Symposium on Advanced Plasma Science and its Applications (ISPlasma2009), 2009/03/08
  • Crystal Growth of semi-polar (11-22)GaN on a (113)Si substrate, 8th Akasaki Research Center Symposium, To the New Horizon of the Nitride Research, 2008/11/20
  • (111)Si 上InGaN/GaN ストライプ構造の光学特性, 第69回 応用物理学会学術講演会, 2008/09/02
  • (110)Si基板を用いた無極性(11-20)GaNの結晶成長, 特定領域研究「窒化物光半導体のフロンティア―材料潜在能力の極限発現―」公開シンポジウム, 2008/08/01
  • 加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長, 特定領域研究「窒化物光半導体のフロンティア―材料潜在能力の極限発現―」公開シンポジウム, 2008/08/01
  • Maskless selective growth of semi-polar (11-22) GaN on Si (113) substrate by metal organic vapor phase epitaxy, Second International Symposium on Growth of III-Nitrides (ISGN-2), 2008/07/06
  • HVPE growth of semi-polar (11-22)GaN on a GaN template (113)Si substrate, Second International Symposium on Growth of III-Nitrides (ISGN-2), 2008/07/06
  • Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si, Second International Symposium on Growth of III-Nitrides (ISGN-2), 2008/07/06
  • Growth of Non-polar (11-20)GaN on a patterned (110)Si substrate by selective MOVPE, 14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV), 2008/06/01
  • (113)Si 上(11-22)GaN のMOVPE 選択再成長 (II), 第55回 応用物理学関係連合講演会, 2008/03/27
  • (113) 加工Si 基板上への(11-22)GaN のHVPE 成長 (II), 第55回 応用物理学関係連合講演会, 2008/03/27
  • (113)Si基板を用いた半極性(11-22)GaNの選択MOVPE成長, 結晶工学分科会 2007年年末講演会「結晶から広がる科学」, 2007/12/14
  • 加工シリコン基板上への半極性GaNの選択成長と物性, 学振第162委員会研究会, 2007/12
  • Growth of Semi-polar (11-22)GaN on a (113)Si Substrate by Selective MOVPE, 34th International Symposium on Compound Semiconductors (ISCS 2007), 2007/10/15
  • シリコン基板上の半極性窒化物半導体選択成長, 平成19年度電気関係学会東海支部連合大会「窒化物半導体の新展開」シンポジウム, 2007/09/27
  • Fabrication and Properties of Semi-Polar (1-101) and (11-22) InGaN/GaN MQW Light Emitting Diodes on Patterned Si Substrates, 7th International Conference on Nitride Semiconductors, 2007/09/16
  • (11-22)GaNの時間分解分光, 第68回 応用物理学関係連合講演会, 2007/09/04
  • (311)加工Si基板上への(11-22)GaNのHVPE成長, 第68回 応用物理学関係連合講演会, 2007/09/04

Social Activities

  • 研究室見学(四條畷高校生), 大阪大学, 2021/08/30 - 2021/08/30
  • 研究室見学(長田高校生), 大阪大学, 2021/03/26 - 2021/03/26
  • LayTec社in-situモニタリングシステム プライベートセミナー, 2015/11/18 - 2015/11/19
  • LayTec社in-situモニタリングシステム プライベートセミナー, 2014/11/11 - 2014/11/12
  • LayTec社in-situモニタリングシステム プライベートセミナー, 2013/10/22 - 2013/10/23
  • 楽しい理科のはなし2016~不思議の箱を開けよう~「光通信の不思議」, 2016/08/23 -
  • 学都「仙台・宮城」サイエンスデイ2016, 2016/07/17 -
  • 楽しい理科のはなし2015~不思議の箱を開けよう, 2015/08/21 -
  • 学都「仙台・宮城」サイエンス・デイ2015 "光を使って、話をしよう", 2015/07/19 -
  • 楽しい理科のはなし2014~不思議の箱を開けよう, 2014/08/21 -
  • 学都「仙台・宮城」サイエンス・デイ2014 "光を使って、話をしよう", 2014/07/20 -
  • 平成 25年度 応用物理学会東北支部 リフレッシュ理科教室 「光を使って、音を伝えてみよう!(クリスマス編), 2013/12/13 -
  • 楽しい理科のはなし2013~不思議の箱を開けよう, 2013/10/15 -
  • 学都「仙台・宮城」サイエンス・デイ2013 "光を使って、話をしよう", 2013/07/21 -
  • リフレッシュ理科教室, 2013/06/28 -
  • 第12回サイエンス・スクール(東北大学出前授業) 仙台市立木町通り小学校, 2012/12/17 -
  • 楽しい理科のはなし2012~不思議の箱を開けよう, 2012/08/21 -
  • 学都「仙台・宮城」サイエンス・デイ2012, 2012/07/15 -
  • 出前授業 仙台市館小学校, 2012/06/28 -

Committee Memberships

  • 一般社団法人ワイドギャップ半導体学会, 総務委員(会計委員), 2021/04 - Present
  • LEDIA2022, 実行委員, 2021/04 - Present
  • 第14回窒化物半導体国際会議 ICNS-14, 実行委員(庶務委員), 2019/04 - Present
  • 日本光学会 光光委員会(関西), 委員, 2019/04 - Present
  • Applied Physics Express, Editorial committee, 2019/04 - Present
  • 応用物理学会結晶工学分科会, 企画担当幹事, 2018/04 - Present
  • JSAP, Program Editorial Committee, 2017/09 - Present
  • 2020年発光素子および産業応用に関する国際会議 LEDIA2020, 実行委員(会計委員)・プログラム委員, 2019/04 - 2020/04
  • 第9回 ワイドギャップ半導体に関するアジア太平洋ワークショップ APWS2019, 現地実行委員(庶務), 2017/04 - 2019/11
  • 2019年発光素子および産業応用に関する国際会議 LEDIA2019, 実行委員(会計委員)・プログラム委員, 2018/04 - 2019/04
  • 窒化物半導体国際ワークショップ IWN-2018, 実行委員(広報委員), 2016/04 - 2018/11
  • 2018年発光素子および産業応用に関する国際会議 LEDIA2018, 実行委員(会計委員)・プログラム委員, 2017/04 - 2018/04
  • 紫外光材料及び素子に関する国際会議 IWUMD 2017, 実行委員(展示委員), 2016/04 - 2017/11
  • 2017年発光素子および産業応用に関する国際会議 LEDIA2017, 実行委員(会計委員)・プログラム委員, 2016/04 - 2017/04
  • The 6th International Symposium on Growth of III-Nitrides, 総務委員, 2014/10 - 2015/11
  • The 6th International Symposium on Growth of III-Nitrides, 総務委員, 2014/10 - 2015/11
  • 2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2), 実行委員, 2014/04 - 2014/11
  • 2nd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-2), 実行委員, 2014/04 - 2014/11
  • 第33回電子材料シンポジウム, 会場委員, 2013/10 - 2014/07
  • 第33回電子材料シンポジウム, 会場委員, 2013/10 - 2014/07
  • 第32回電子材料シンポジウム, 会場委員, 2012/10 - 2013/09
  • 第32回電子材料シンポジウム, 会場委員, 2012/10 - 2013/09
  • 第7回窒化物半導体結晶成長講演会, 委員, 2015/05 -
  • 第7回窒化物半導体結晶成長講演会, 委員, 2015/05 -