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Watanabe Heiji

渡部 平司

Graduate School of Engineering Division of Precision Science & Technology and Applied Physics, Professor

Education

  • - 1990/03, Osaka University, Graduate School, Division of Engineering
  • - 1988/03, Osaka University, Faculty of Engineering

Research History

  • 2020/04/01 - Present, Osaka University Graduate School of Engineering ., Professor
  • 2019/08 - Present, 大阪大学大学院工学研究科副研究科長
  • 2017/04 - Present, 大阪大学・栄誉教授
  • 2014/04 - Present, 大阪大学大学院工学研究科執行部(総務室長)
  • 2006/11 - Present, 大阪大学大学院工学研究科生命先端工学専攻 教授
  • 2006/11/01 - 2020/03/31, Osaka University Graduate School of Engineering Division of Science and Biotechnology, Professor
  • 2016/08 - 2018/08, 大阪大学副理事
  • 2007/07 - 2013/03, 大阪大学大学院工学研究科附属超精密科学研究センター長(兼任)
  • 2004/05/01 - 2006/10/31, Osaka University Graduate School of Engineering Division of Precision Science & Technology and Applied Physics, Associate Professor
  • 2004/05 - 2006/10, Osaka University
  • 2001/06 - 2004/04, 日本電気株式会社 シリコンシステム研究所 主任研究員
  • 2000/07 - 2001/06, 日本電気株式会社 シリコンシステム研究所 主任
  • 1998/02 - 2000/07, NEC Corporation
  • 1994/02 - 1998/02, JRCAT
  • 1990/04 - 1994/02, NEC Corporation

Professional Memberships

  • The Japan Society of Vacuum and Surface Science
  • IEEE
  • 応用物理学会

Papers

  • Backscattering X-ray imaging using Fresnel zone aperture, Takayoshi Shimura,Takuji Hosoi,Heiji Watanabe, Applied Physics Express, IOP Publishing, Vol. 14, No. 7, p. 072002-072002, 2021/07/01
  • Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway, Yuhei Wada,Hidetoshi Mizobata,Mikito Nozaki,Takuji Hosoi,Tetsuo Narita,Tetsu Kachi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Express, IOP Publishing, Vol. 14, No. 7, p. 071001-071001, 2021/07/01
  • A Pixel Design of a Branching Ultra-Highspeed Image Sensor, Nguyen Hoai Ngo,Kazuhiro Shimonomura,Taeko Ando,Takayoshi Shimura,Heiji Watanabe,Kohsei Takehara,Anh Quang Nguyen,Edoardo Charbon,Takeharu Goji Etoh, Sensors, MDPI AG, Vol. 21, No. 7, p. 2506-2506, 2021/04/03
  • Origin of Anomalous Fixed Charges at the SiO2/GaN Interface due to Forming Gas Annealing, p. 195-199, 2021/01
  • 4H-SiC CMOS inverters fabricated by ultrahigh-temperature gate oxidation and forming gas annealing, Kidist Moges,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2020/12/09
  • Physical Origins of Anomalous Fixed Charges at the SiO2/GaN Interface Generated by Forming Gas Annealing, 2020/12/09
  • Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light, Nguyen Hoai Ngo,Anh Quang Nguyen,Fabian M. Bufler,Yoshinari Kamakura,Hideki Mutoh,Takayoshi Shimura,Takuji Hosoi,Heiji Watanabe,Philippe Matagne,Kazuhiro Shimonomura,Kohsei Takehara,Edoardo Charbon,Takeharu Goji Etoh, Sensors, Vol. 20, No. 23, 2020/12
  • Defect engineering in SiC technology for high-voltage power devices, Tsunenobu Kimoto,Heiji Watanabe, Applied Physics Express, IOP Publishing, Vol. 13, No. 12, p. 120101-1-120101-44, 2020/11/26
  • -, The Journal of The Institute of Image Information and Television Engineers, Vol. 74, No. 6, p. 936-941, 2020/11
  • Gate Stack Technology for Advanced GaN-based MOS Devices, Heiji Watanabe,Takuji Hosoi,Mikito Nozaki,Hidetoshi Mizobata,Takayoshi Shimura, 2020/09
  • Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices, Hidetoshi Mizobata,Yuhei Wada,Mikito Nozaki,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Express, IOP Publishing, Vol. 13, No. 8, p. 081001-081001, 2020/08/01
  • Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement, Hironori Takeda,Mitsuru Sometani,Takuji Hosoi,Takayoshi Shimura,Hiroshi Yano,Heiji Watanabe, Materials Science Forum, Trans Tech Publications, Ltd., Vol. 1004, p. 620-626, 2020/07
  • Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma, Mikito Nozaki,Daiki Terashima,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, IOP Publishing, Vol. 59, No. SM, p. SMMA07-SMMA07, 2020/07/01
  • Insight into gate dielectric reliability and stability of SiO2/GaN MOS devices, Yuhei Wada,Mikito Nozaki,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, IOP Publishing, Vol. 59, No. SM, p. SMMA03-SMMA03, 2020/07/01
  • Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces, T. Umeda,Y. Nakano,E. Higa,T. Okuda,T. Kimoto,T. Hosoi,H. Watanabe,M. Sometani,S. Harada, Journal of Applied Physics, AIP Publishing, Vol. 127, No. 14, p. 145301-145301, 2020/04/14
  • Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams, Akira Uedono,Wataru Ueno,Takahiro Yamada,Takuji Hosoi,Werner Egger,Tönjes Koschine,Christoph Hugenschmidt,Marcel Dickmann,Heiji Watanabe, Journal of Applied Physics, Vol. 127, No. 5, p. 054503-1-054503-8, 2020/02
  • Highly Efficient Room Temperature Electroluminescence from GeSn Lateral PIN Diode Fabricated by Liquid-phase Crystallization, p. 65-68, 2020/01
  • Solid-phase Grown GeSn n-MOSFETs on GOI Wafer Fabricated by Flash Lamp Annealing, p. 121-124, 2020/01
  • The Role of Oxygen Ambient Anneal for Ba-incorporated SiO2/SiC Interface, 寺尾 豊,辻 英徳,細井 卓治,張 旭芳,矢野 裕司,志村 考功,渡部 平司, p. 137-139, 2020/01
  • Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET, Takuji Hosoi,Shuji Azumo,Yusaku Kashiwagi,Shigetoshi Hosaka,Kenji Yamamoto,Masatoshi Aketa,Hirokazu Asahara,Takashi Nakamura,Tsunenobu Kimoto,Tayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 59, No. 2, p. 021001-1-021001-8, 2020/01
  • The role of oxygen ambient anneal for Ba-incorporated SiO2/SiC interface, Y. Terao,H. Tsuji,T. Hosoi,X. Zhang,H. Yano,T. Shimura,H. Watanabe, 2019/12
  • Room Temperature Electroluminescence from Tensile-strained GeSn Lateral PIN Structures Fabricated by Nucleation-controlled Liquid-phase Crystallization, Y. Wada,T. Hosoi,T. Shimura,H. Watanabe, 2019/12
  • High-temperature CO2 Process for Improvement of SiC MOS Characteristics, T. Hosoi,M. Ohsako,T. Shimura,H. Watanabe, 2019/12
  • レーザーテラヘルツエミッション顕微鏡を用いたSiC MOS界面の表面ポテンシャル評価, 西村辰彦,中西英俊,川山巌,斗内政吉,細井卓治,志村考功,渡部平司, 2019/12
  • SiO2中へのGa拡散がSiO2/GaN MOS特性に与える影響の評価, 和田悠平,野崎幹人,細井卓治,志村考功,渡部平司, 2019/12
  • AlGaN/GaNヘテロ構造の低バイアス電力ICPエッチングによる低損傷加工, 野崎幹人,寺島大貴,吉越章隆,細井卓治,志村考功,渡部平司, 2019/12
  • CO2アニールによるSiO2/SiC界面窒素量制御とSiC MOSFET信頼性向上, 細井卓治,大迫桃恵,伊藤滉二,志村考功,木本恒暢,渡部平司, 2019/12
  • Evaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface, Mikito Nozaki,Daiki Terashima,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2019/11
  • Thermal Oxidation of SiC: Kinetics and SiO2/SiC Interface Property, Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2019/11
  • Oxidation of SiGe Alloy: Residual Order in SiO2 and Self-limiting Oxidation, Takayoshi Shimura,Takuji Hosoi,Heiji Watanabe, 2019/11
  • Characterization of Surface Potential of Oxidized Silicon Carbide by a Laser Terahertz Emission Microscope, Tatsuhiko Nishimura,Hidetoshi Nakanishi,Iwao Kawayama,Masayoshi Tonouchi,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2019/10
  • Interface Engineering of SiC MOS Devices by High-temperature CO2 Treatment, Takuji Hosoi,Momoe Ohsako,Takayoshi Shimura,Heiji Watanabe, 2019/10
  • Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations, Mitsuru Sometani,Takuji Hosoi,Hirohisa Hirai,Tetsuo Hatakeyama,Shinsuke Harada,Hiroshi Yano,Takayoshi Shimura,Heiji Watanabe,Yoshiyuki Yonezawa,Hajime Okumura, Vol. 115, No. 13, p. 132102-1-132102-5, 2019/09
  • Gate stack engineering for GaN power MOSFETs, T. Hosoi,M. Nozaki,T. Shimura,H. Watanabe, 2019/08
  • Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures, Kidist Moges,Mitsuru Sometani,Takuji Hosoi,Takayoshi Shimura,Shinsuke Harada,Heiji Watanabe, Materials Science Forum, Vol. 963, p. 226-229, 2019/07
  • Evaluation of the Impact of Al Atoms on SiO2/SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFET, Hironori Takeda,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Vol. 963, p. 171-174, 2019/07
  • Recent progress in understanding carbon-related interface defects and electrical properties in SiC-MOS devices, T. Hosoi,K. Moges,T. Shimura,H. Watanabe, 2019/07
  • Characterization of nitrogen distribution near SiO2/SiC interfaces annealed in NO, Vol. 119, No. 96, p. 1-4, 2019/06
  • Tensile-strained GeSn-on-SOI MSM Photodetector Fabricated by Solid-phase Epitaxy, H. Oka,W. Mizubayashi,T. Hosoi,T. Shimura,H. Watanabe,T. Maeda,N. Uchida,K. Endo, 2019/06
  • Comparative study on thermal robustness of GaN and AlGaN/GaN MOS devices with thin oxide interlayers, Mikito Nozaki,Daiki Terashima,Takahiro Yamada,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 58, No. SC, p. SCCD08-1-SCCD08-6, 2019/05
  • Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator, Takuji Hosoi,Kenta Watanabe,Mikito Nozaki,Takahiro Yamada,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 58, No. SC, p. SCCD16-1-SCCD16-6, 2019/05
  • Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature, Kidist Moges,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Express, Vol. 12, No. 6, p. 061003-1-061003-4, 2019/05
  • Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices, Takahiro Yamada,Daiki Terashima,Mikito Nozaki,Hisashi Yamada,Tokio Takahashi,Mitsuaki Shimizu,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 58, No. SC, p. SCCD06-1-SCCD06-5, 2019/04
  • Analysis of III–V oxides at high-k/InGaAs interfaces induced by metal electrodes, Shinichi Yoshida,Dennis H L Lin,Rena Suzuki,Yuki Miyanami,Nadine Collaert,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 58, No. 5, p. 051010-1-051010-6, 2019/04
  • 近赤外イメージセンサーに向けた石英基板上裏面照射型GeSnフォトダイオードアレイの開発, 岡 博史,井上 慶太郎,Thi Thuy Nguyen,黒木 伸一郎,細井 卓治,志村 考功,渡部 平司, 2019/03
  • Interface property of thermally grown SiO2/SiC structures and MOS characteristics, 2019/02
  • Demonstration of mm long nearly intrinsic GeSn single-crystalline wires on quartz substrate fabricated by nucleation-controlled liquid-phase crystallization, Youki Wada,Keitaro Inoue,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 58, No. SB, p. SBBK01-1-SBBK01-6, 2019/02
  • Theoretical Study on the Effect of Incorporation of Hf Atoms in AlON Dielectrics, Takuya Nagura,Kenta Chokawa,Masaaki Araidai,Takuji Hosoi,Heiji Watanabe,Atsushi Oshiyama,Kenji Shiraishi, 2019/01
  • Insight into Channel Conduction Mechanism of 4H-SiC(0001) MOSFET Based on Temperature-dependent Hall-effect Measurement, Hironori Takeda,Mitsuru Sometani,Takuji Hosoi,Takayoshi Shimura,Hiroshi Yano,Heiji Watanabe, 2019/01
  • Synchrotron-Radiation X-ray Photoelectron Spectroscopy Study of GaOx Interlayer Growth on GaN Substrate with Different Conduction Type, Takahiro Yamada,Daiki Terashima,Mikito Nozaki,Hisashi Yamada,Tokio Takahashi,Mitsuaki Shimizu,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2019/01
  • Effect of incorporating Hf atoms in AlON gate dielectrics on hole leakage current, T. Nagura,K. Chokawa,M. Araidai,T. Hosoi,H. Watanabe,A. Oshiyama,K. Shiraishi, 2018/12
  • High-mobility P- and N-channel GeSn Thin-film Transistors on Transparent Substrate Fabricated by Nucleation-controlled Liquid-phase Crystallization, T. Hosoi,H. Oka,K. Inoue,Y. Wada,T. Shimura,H. Watanabe, 2018/12
  • Improved reliability of SiO2/GaN MOS devices by controlling the oxide interlayer, Takahiro Yamada,Daiki Terashima,Mikito Nozaki,Hisashi Yamada,Tokio Takahashi,Mitsuaki Shimizu,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2018/11
  • Comparative study of thermal decomposition of thin Ga oxide layer on GaN and AlGaN surfaces, Mikito Nozaki,Daiki Terashima,Takahiro Yamada,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2018/11
  • Mobility enhancement in AlGaN/GaN MOS-HFET with gate recess etching by using AION gate insulator, Takuji Hosoi,Kenta Watanabe,Mikito Nozaki,Takahiro Yamada,Takayoshi Shimura,Heiji Watanabe, 2018/11
  • Scattering Origins of Inversion Channel Electron on 4H-SiC MOSFET Investigated by Ultralow Net Concentration P-type Epitaxial Wafers, 2018/11
  • High-temperature CO2 treatment for improvement of SiC MOS interface properties, 2018/11
  • Insight into channel conduction mechanism based on temperature dependence of free channel electron density in 4H-SiC(0001) MOSFET, 2018/11
  • Comparative study of thermal decomposition of thin Ga oxide layer on GaN and AlGaN surfaces, 2018/11
  • Precise evaluation of N distribution near SiO2/SiC interface in NO-annealed SiC MOS structures, 2018/11
  • Influence of GaN Conduction Type on Formation of GaOx Interlayer in SiO2/GaN Structure, 2018/11
  • Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling, Mitsuru Sometani,Yoshihito Katsu,Daisuke Nagai,Hidenori Tsuji,Takuji Hosoi,Takayoshi Shimura,Yoshiyuki Yonezawa,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 57, No. 12, p. 120304-1-120304-4, 2018/10
  • Optoelectronic Integration Based on High-quality GeSn Grown by Liquid Phase Crystallization, T. Hosoi,H. Oka,T. Shimura,H. Watanabe, 2018/10
  • Gate Stack Technology for Advanced GaN and SiC based MOS Devices, H. Watanabe,T. Yamada,M. Nozaki,K. Moges,T. Hosoi,T. Shimura, 2018/10
  • Highly n-Type Doped Ge and Gesn Wires Fabricated By Lateral Liquid-Phase Epitaxy, H. Watanabe,T. Tomita,H. Oka,K. Inoue,T. Hosoi,T. Shimura, 2018/10
  • Gate Stack Technology for Advanced GaN-Based Mos Devices, H. Watanabe,T. Yamada,M. Nozaki,T. Hosoi,T. Shimura, 2018/10
  • First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current, Takuya Nagura,Kenta Chokawa,Masaaki Araidai,Takuji Hosoi,Heiji Watanabe,Atsushi Oshiyama,Kenji Shiraishi, 2018/09
  • Characterization of SiO2/SiC interface using a Laser Terahertz Emission Microscope, Tatsuhiko Nishimura,Hidetoshi Nakanishi,Iwao Kawayama,Masayoshi Tonouchi,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2018/09
  • Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization, Youki Wada,Keitaro Inoue,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2018/09
  • Electron-spin-resonance characterization on interface carbon defects at 4H-SiC/SiO2 interfaces formed by ultrahigh-temperature oxidation, T. Umeda,T. Hosoi,T. Okuda,T. Kimoto,M. Sometani,S. Harada,H. Watanabe, 2018/09
  • Superiority of pure O2-based gate oxidation on Hall effect mobility of 4H-SiC (0001) MOSFET revealed by low-doped epitaxial wafers, M. Sometani,T. Hosoi,T. Hatakeyama,S. Harada,H. Yano,T. Shimura,H. Watanabe,Y. Yonezawa,H. Okumura, 2018/09
  • Evaluation of the impact of Al atoms on SiO2/SiC interface property by using 4H-SiC n+-channel junctionless MOSFET, H. Takeda,T. Hosoi,T. Shimura,H. Watanabe, 2018/09
  • Sub-nm-scale depth profiling of nitrogen in NO- and N2-annealed SiO2/4H-SiC(0001) structures, K. Moges,M. Sometani,T. Hosoi,T. Shimura,S. Harada,H. Watanabe, 2018/09
  • Sub-nanometer-scale depth profiling of nitrogen atoms in SiO2/4H-SiC structures treated with NO annealing, Kidist Moges,Mitsuru Sometani,Takuji Hosoi,Takayoshi Shimura,Shinsuke Harada,Heiji Watanabe, Applied Physics Express, Vol. 11, No. 10, p. 101303-1-101303-4, 2018/09
  • Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements, Eigo Fujita,Mitsuru Sometani,Tetsuo Hatakeyama,Shinsuke Harada,Hiroshi Yano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, AIP Advances, Vol. 8, No. 8, p. 085305-1-085305-6, 2018/08
  • Passive–active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O2/Ar gas mixture and its impact on SiO2/SiC interface quality, Takuji Hosoi,Yoshihito Katsu,Kidist Moges,Daisuke Nagai,Mitsuru Sometani,Hidenori Tsuji,Takayoshi Shimura,Heiji Watanabe, Applied Physics Express, Vol. 11, No. 9, p. 091301-1-091301-4, 2018/08
  • Advancement of X-ray radiography using microfocus X-ray source in conjunction with amplitude grating and SOI pixel detector, SOPHIAS, Ryo Hosono,Tomoki Kawabata,Kiyoshi Hayashida,Togo Kudo,Kyosuke Ozaki,Nobukazu Teranishi,Takaki Hatsui,Takuji Hosoi,Heiji Watanabe,Takayoshi Shimura, Optics Express, Vol. 26, No. 16, p. 21044-21053, 2018/08
  • GaN-based Metal-Insulator-Semiconductor Transistors on Si for Power Switching Applications, Satoshi Nakazawa,Hong-An Shih,Naohiro Tsurumi,Yoshiharu Anda,Tsuguyasu Hatsuda,Tetsuzo Ueda,Mikito Nozaki,Takahiro Yamada,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe,Tamotsu Hashizume, 2018/06
  • Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge, Eiji Kojima,Kenta Chokawa,Hiroki Shirakawa,Masaaki Araidai,Takuji Hosoi,Heiji Watanabe,Kenji Shiraishi, APPLIED PHYSICS EXPRESS, IOP PUBLISHING LTD, Vol. 11, No. 6, p. 061501-1-061501-4, 2018/06
  • Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties, Mikito Nozaki,Kenta Watanabe,Takahiro Yamada,Hong-An Shih,Satoshi Nakazawa,Yoshiharu Anda,Tetsuzo Ueda,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Vol. 57, No. 6, p. 06KA02-1-06KA02-7, 2018/06/01
  • Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment, Takahiro Yamada,Kenta Watanabe,Mikito Nozaki,Hong-An Shih,Satoshi Nakazawa,Yoshiharu Anda,Tetsuzo Ueda,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Vol. 57, No. 6, p. 06KA07-1-06KA07-6, 2018/06/01
  • Interface engineering in GaN metal-oxide-semiconductor device with SiO2 gate insulator, 2018/06
  • SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors, Kenta Watanabe,Daiki Terashima,Mikito Nozaki,Takahiro Yamada,Satoshi Nakazawa,Masahiro Ishida,Yoshiharu Anda,Tetsuzo Ueda,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Vol. 57, No. 6, p. 06KA03-1-06KA03-6, 2018/06/01
  • Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams, Akira Uedono,Takahiro Yamada,Takuji Hosoi,Werner Egger,Tönjes Koschine,Christoph Hugenschmidt,Marcel Dickmann,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 112, No. 18, 2018/04/30
  • AlON/AlGaN/GaN MIS-HFETによる高速スイッチング動作, 中澤敏志,施泓安,鶴見直大,按田義治,初田次康,上田哲三,野﨑幹人,山田高寛,細井卓治,志村考功,渡部平司,橋詰保, 2018/03
  • 裏面照射型近赤外イメージセンサーに向けた基板上単結晶GeSnフォトダイオードアレイの開発, 岡博史,井上慶太郎,Thi Thuy Nguyen,黒木伸一郎,細井卓治,志村考功,渡部平司, 2018/03
  • Improvement of SiO2/4H-SiC(0001) interface properties by H2 and Ar mixture gas treatment prior to SiO2 deposition, Hidenori Tsuji,Takuji Hosoi,Yutaka Terao,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 924, p. 461-464, 2018
  • High-mobility TFT and enhanced luminescence utilizing ucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic, H. Oka,M. Koyama,T. Tomita,T. Amamoto,K. Tominaga,S. Tanaka,T. Hosoi,T. Shimura,H. Watanabe, 2018/01
  • Recent Advances in GaN MIS-HFETs on Si Substrate, p. 87-90, 2018/01
  • Low-Temperature Optical Property and Cavity Formation of Tensile-Strained Highly n-Doped Ge Wires Fabricated by Lateral Liquid-Phase Epitaxy, p. 9-12, 2018/01
  • Single-Crystalline GeSn Formation on Quartz Substrate and Its Optoelectronic Applications, p. 151-154, 2018/01
  • Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability, Takahiro Yamada,Kenta Watanabe,Mikito Nozaki,Hisashi Yamada,Tokio Takahashi,Mitsuaki Shimizu,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Express, Japan Society of Applied Physics, Vol. 11, No. 1, p. 015701-1-015701-4, 2018/01/01
  • Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization, Hiroshi Oka,Takashi Tomita,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Express, Japan Society of Applied Physics, Vol. 11, No. 1, p. 011304-1-011304-4, 2018/01/01
  • Improvements of Grating-based X-ray Phase Contrast Imaging with a Microfocus X-ray Source by a SOI Pixel Detector, SOPHIAS, R. Hosono,D. Tsukamoto,T. Kawabata,K. Hayashida,T. Kudo,K. Ozaki,T. Hatsui,N. Teranishi,T. Hosoi,H. Watanabe,T. Shimura, 2017/12
  • AlGaN/GaN MOS-HFET with high-quality and robust N-incorporated aluminum oxide (AlON) gate insulator, K. Watanabe,M. Nozaki,T. Yamada,S. Nakazawa,M. Ishida,Y. Anda,T. Ueda,A. Yoshigoe,T. Hosoi,T. Shimura,H. Watanabe, 2017/12
  • Improved Channel Mobility of 4H-SiC N-MOSFETs by Ultrahigh-Temperature Oxidation with Low-Oxygen Partial-Pressure Cooling Procedure, M. Sometani,Y. Katsu,D. Nagai,H. Tsuji,T. Hosoi,T. Shimura,Y. Yonezawa,H. Watanabe, 2017/12
  • 4H-SiC(0001) N- and P-channel MOSFETs with Pure SiO2 Gate Dielectrics Formed under Extreme Oxidation Conditions, T. Hosoi,Y. Katsu,K. Moges,H. Tsuji,M. Sometani,T. Shimura,H. Watanabe, 2017/12
  • Fast Switching Performance by 20 A / 730 V AlGaN/GaN MIS-HFET Using AlON Gate Insulator, S. Nakazawa,H.-A. Shih,N. Tsurumi,Y. Anda,T. Hatsuda,T. Ueda,M. Nozaki,T. Yamada,T. Hosoi,T. Shimura,H. Watanabe,T. Hashizume, 2017/12
  • Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip, H. Oka,K. Inoue,T. T. Nguyen,S. Kuroki,T. Hosoi,T. Shimura,H. Watanabe, 2017/12
  • SiO2/AlON Stacked Gate Dielectrics for AlGaN/GaN MOS-HFET, K. Watanabe,D. Terashima,M. Nozaki,T. Yamada,S. Nakazawa,M. Ishida,Y. Anda,T. Ueda,A. Yoshigoe,T. Hosoi,T. Shimura,H. Watanabe, 2017/11
  • AlON Gate Dielectrics Formed by Repeating ALD-based Thin AlN Deposition and In situ Oxidation for AlGaN/GaN MOS-HFETs, M. Nozaki,K. Watanabe,T. Yamada,H. Shih,S. Nakazawa,Y. Anda,T. Ueda,A. Yoshigoe,T. Hosoi,T. Shimura,H. Watanabe, 2017/11
  • Physical and Electrical Characterization of AlGaN/GaN MOS Gate Stacks with AlGaN Surface Oxidation Treatment, T. Yamada,K. Watanabe,M. Nozaki,H. Shih,S. Nakazawa,Y. Anda,T. Ueda,A. Yoshigoe,T. Hosoi,T. Shimura,H. Watanabe, 2017/11
  • レーザーテラヘルツエミッション顕微鏡を用いた 4H-SiC ウエハ/熱酸化膜の特性評価, 西村辰彦,中西英俊,川山巌,斗内政吉,細井卓治,志村考功,渡部平司, 2017/11
  • 紫外光照射とアニール処理による SiC MOS キャパシタの電気特性改善, 大迫 桃恵,細井 卓治,志村 考功,渡部 平司, 2017/11
  • プラズマ CVD 成膜した SiO2/AlGaN 界面特性の成膜電力依存性と堆積後熱処理の検討, 寺島 大貴,渡邉 健太,山田 高寛,野﨑 幹人,施 泓安,中澤 敏志,按田 義治,上田 哲三,吉越 章隆,細井 卓治,志村 考功,渡部 平司, 2017/11
  • ジャンクションレス 4H-SiC(0001) MOSFET を用いた高濃度 n+層の電子移動度評価, 武田 紘典,細井 卓治,志村 考功,渡部 平司, 2017/11
  • Impact of ultrahigh-temperature gate oxidation and hydrogen annealing on the performance of 4H-SiC(0001) p-channel MOSFETs, Kidist Moges,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2017/11
  • AlGaN/GaN MOS デバイス向け ALD-AlON ゲート絶縁膜に対する窒素添加効果, 野崎 幹人,渡邉 健太,山田 高寛,施 泓安,中澤 敏志,按田 義治,上田 哲三,吉越 章隆,細井 卓治,志村 考功,渡部 平司, 2017/11
  • ICP エッチング表面のプラズマ酸化処理による SiO2/GaN 界面欠陥の低減, 山田 高寛,渡邉 健太,野崎 幹人,高橋 言諸,山田 永,清水 三聡,施 泓安,中澤 敏志,按田 義治,上田 哲三,吉越 章隆,細井 卓治,志村 考功,渡部 平司, 2017/11
  • High Mobility In0.53Ga0.47As MOSFETs with Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides with Metal Electrodes, S. Yoshida,H. C. Lin,A. Vais,A. Alian,J. Franco,S. El Kazzi,Y. Mols,Y. Miyanami,M. Nakazawa,N. Collaert,H. Watanabe,A. Thean, IEEE Journal of the Electron Devices Society, Institute of Electrical and Electronics Engineers Inc., Vol. 5, No. 6, p. 480-484, 2017/11/01
  • Reactivity of Water Vapor with Ultrathin GeO2/Ge and SiO2/Si Structures Investigated by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy, K. Arima,T. Hosoi,H. Watanabe,E.J. Crumlin, Meeting Program of 232nd ECS Meeting, The Electrochemical Society, p. 118-118, 2017/10
  • Reactivity of Water Vapor with Ultrathin GeO2/Ge and SiO2/Si Structures Investigated by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy, Kenta Arima,Takuji Hosoi,Heiji Watanabe,Ethan J Crumlin, ECS Transactions, The Electrochemical Society, Vol. 80, No. 2, p. 131-140, 2017/09
  • マイクロフォーカスX線源と振幅格子を用いた多波長X線位相イメージング-SOI ピクセル検出器による高度化-, 細野凌,塚本大裕,川端智樹,林田 清,工藤統吾,尾崎恭介,初井宇記,寺西信一,細井卓治,渡部平司,志村考功, 2017/09
  • La埋め込みターゲットを用いたTalbot-Lau干渉計によるX線位相イメージング, 塚本大裕,山崎周,細野凌,細井卓治,渡部平司,志村考功, 2017/09
  • Interface Property of SiO2/4H-SiC(0001) Structures Formed by Ultrahigh-Temperature Oxidation under Low Oxygen Partial Pressure, T. Hosoi,Y. Katsu,D. Nagai,H. Tsuji,M. Sometani,T. Shimura,H. Watanabe, 2017/09
  • Significant Performance Improvement in 4HSiC(0001) P-Channel MOSFETs with Gate Oxides Grown at Ultrahigh-Temperature, Kidist Moges,T. Hosoi,T. Shimura,H. Watanabe, 2017/09
  • Improvement of SiO2/4H-SiC(0001) Interface Properties by H2 and Ar Mixture Gas Treatment Prior to SiO2 Deposition, H. Tsuji,T. Hosoi,Y. Terao,T. Shimura,H. Watanabe, 2017/09
  • Enhancement-mode n-channel TFT and room-temperature near-infrared emission based on n+/p junction in single-crystalline GeSn on transparent substrate, H. Oka,M. Koyama,T. Hosoi,T. Shimura,H. Watanabe, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., p. T58-T59, 2017/07/31
  • Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures, Kenta Watanabe,Mikito Nozaki,Takahiro Yamada,Satoshi Nakazawa,Yoshiharu Anda,Masahiro Ishida,Tetsuzo Ueda,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 111, No. 4, 2017/07/24
  • MOS Interface Engineering for Advanced SiC and GaN Power Devices, T. Hosoi,T. Shimura,H. Watanabe, 2017/07
  • Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers, Takahiro Yamada,Joyo Ito,Ryohei Asahara,Kenta Watanabe,Mikito Nozaki,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 110, No. 26, 2017/06/26
  • Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium, Atthawut Chanthaphan,Yoshihito Katsu,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications, Switzerland, 2017/05
  • Ultrahigh Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties, Takuji Hosoi,Daisuke Nagai,Mitsuru Sometani,Takayoshi Shimura,Manabu Takei,Heiji Watanabe, Trans Tech Publications,Switzerland, 2017/05
  • Impact of rapid cooling process in ultrahigh-temperature oxidation of 4H-SiC(0001), Mitsuru Sometani,Daisuke Nagai,Yoshihito Katsu,Takuji Hosoi,Takayoshi Shimura,Manabu Takei,Yoshiyuki Yonezawa,Heiji Watanabe, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Vol. 56, No. 4, 2017/04/01
  • Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient, Takahiro Yamada,Joyo Ito,Ryohei Asahara,Kenta Watanabe,Mikito Nozaki,Satoshi Nakazawa,Yoshiharu Anda,Masahiro Ishida,Tetsuzo Ueda,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Journal of Applied Physics, American Institute of Physics Inc., Vol. 121, No. 3, 2017/01/21
  • Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization, Hiroshi Oka,Takashi Amamoto,Masahiro Koyama,Yasuhiko Imai,Shigeru Kimura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 110, No. 3, 2017/01/16
  • Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs, K. Watanabe,M. Nozaki,T. Yamada,S. Nakazawa,Y. Anda,M. Isliida,T. Ueda,A. Yoshigoe,T. Hosoi,T. Shimura,H. Watanabe, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., p. 219-222, 2017
  • Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET, Takuji Hosoi,Shuji Azumo,Yusaku Kashiwagi,Shigetoshi Hosaka,Kenji Yamamoto,Masatoshi Aketa,Hirokazu Asahara,Takashi Nakamura,Tsunenobu Kimoto,Takayoshi Shimura,Heiji Watanabe, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., p. 247-250, 2017
  • Insight into metal-enhanced oxidation using barium on 4H-SiC surfaces, Atthawut Chanthaphan,Yoshihito Katsu,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Vol. 55, No. 12, 2016/12/01
  • Impact of water-cooling process in ultra-high-temperature oxidation of 4H-SiC(0001), 2016/11
  • Interface engineering of Al based gate insulators in AlGaN/GaN MOS-HFETs, 2016/11
  • Electrical characteristics of SiC MOSFET fabricated by ultra-high-temperature oxidation under low oxygen partial pressure, 2016/11
  • Formation of thin GaOx Interlayer by thermal oxidation of SiO2/GaN and its effect on electrical properties, 2016/11
  • Hole trapping characteristics in SiC-MOS devices with nitrided SiO2/SiC interface, 2016/11
  • Gate stack technology for advanced power semiconductor devices-Technological similarities and differences between SiC and GaNMOS development-, 2016/11
  • Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties, Takuji Hosoi,Daisuke Nagai,Mitsuru Sometani,Yoshihito Katsu,Hironori Takeda,Takayoshi Shimura,Manabu Takei,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 109, No. 18, 2016/10/31
  • Systematic study of interfacial reactions induced by metal electrodes in high- k /InGaAs gate stacks, S. Yoshida,D. Lin,A. Vais,A. Alian,J. Franco,S. El Kazzi,Y. Mols,Y. Miyanami,M. Nakazawa,N. Collaert,H. Watanabe,A. Thean, Applied Physics Letters, American Institute of Physics Inc., Vol. 109, No. 17, 2016/10/24
  • Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions, Mikito Nozaki,Joyo Ito,Ryohei Asahara,Satoshi Nakazawa,Masahiro Ishida,Tetsuzo Ueda,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Express, Japan Society of Applied Physics, Vol. 9, No. 10, 2016/10/01
  • Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures, Ryohei Asahara,Mikito Nozaki,Takahiro Yamada,Joyo Ito,Satoshi Nakazawa,Masahiro Ishida,Tetsuzo Ueda,Akitaka Yoshigoe,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Express, Japan Society of Applied Physics, Vol. 9, No. 10, 2016/10/01
  • Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy, Daichi Mori,Hiroshi Oka,Takuji Hosoi,Kentaro Kawai,Mizuho Morita,Ethan J. Crumlin,Zhi Liu,Heiji Watanabe,Kenta Arima, Journal of Applied Physics, American Institute of Physics Inc., Vol. 120, No. 9, p. 095306 1-095306 10, 2016/09/07
  • Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-enhanced Oxidation using Barium, A. Chanthaphan,Y. Katsu,T. Hosoi,T. Shimura,H. Watanabe, 2016/09
  • Ultrahigh-tempearture Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties, T. Hosoi,D. Nagai,M. Sometani,T. Shimura,M. Takei,H. Watanabe, 2016/09
  • Impact of Rapid Cooling Process in Ultra-high-temperature Oxidation of 4H-SiC(0001), M. Sometani,D. Nagai,T. Hosoi,T. Shimura,Y. Yonezawa,M. Takei,H. Watanabe, 2016 International Conference on Solid State Devices and Materials (SSDM 2011), 2016/09
  • Gate Stack Technology for Advanced AlGaN/GaN Mos-Hemt Power Devices, H. Watanabe,R. Asahara,J. Ito,K. Watanabe,M. Nozaki,T. Yamada,S. Nakazawa,Y. Anda,M. Ishida,T. Ueda,A. Yoshigoe,T. Hosoi,T. Shimura, 2016/09
  • SiO2/SiC界面への異種元素添加による界面準位低減とその留意点, 細井 卓治,A. Chanthaphan,勝 義仁,志村 孝功,渡部 平司, 2016/08
  • 7.2 High-mobility GeSn p-MOSFETs on Transparent Substrate Utilizing Nucleation-controlled Liquid-phase Crystallization, H. Oka,T. Amamoto,T. Hosoi,T. Shimura,H. Watanabe, 2016/06
  • High-mobility GeSn-based MOSFETs on Transparent Substrates, H. Watanabe, 2016/06
  • Origin of the unidentified positive mobile ions causing the bias temperature instability in SiC MOSFETs and their diffusion process, Hiroki Shirakawa,Katsumasa Kamiya,Masaaki Araidai,Heiji Watanabe,Kenji Shiraishi, APPLIED PHYSICS EXPRESS, IOP PUBLISHING LTD, Vol. 9, No. 6, 2016/06
  • The impact of energy barrier height on border traps in the metal insulator semicondoctor gate stacks on III–V semiconductors, S. Yoshida,S. Taniguchi,H. Minari,D. Lin,T. Ivanov,H. Watanabe,M. Nakazawa,N. Collaert,A. Thean, Japanese Journal of Applied Physics, 2016/05
  • Biotemplates and their application to electronic devices, Yukiharu Uraoka,Mutsunori Uenuma,Yasuaki Ishikawa,Shinya Kumagai,Satoshi Tomita,Heiji Watanabe,Ichiro Yamashita, Intelligent Nanosystems for Energy, Information and Biological Technologies, Springer Japan, p. 119-143, 2016/01/01
  • Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices, Yoshihito Katsu,Takuji Hosoi,Yuichiro Nanen,Tsunenobu Kimoto,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 858, p. 599-602, 2016
  • Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing, Atthawut Chanthaphan,Yuta Fukushima,Kenji Yamamoto,Masatoshi Aketa,Hirokazu Asahara,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 858, p. 445-448, 2016
  • Improvement of SiO2/4H-SiC interface quality by post-oxidation annealing in N2 at high-temperatures, Atthawut Chanthaphan,Yen Hung Cheng,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 858, p. 627-630, 2016
  • Flatband voltage shift depending on SiO2/SiC interface charges in 4H-SiC MOS capacitors with ALON/SiO2 stacked gate dielectrics, Takuji Hosoi,Shuji Azumo,Kenji Yamamoto,Masatoshi Aketa,Yusaku Kashiwagi,Shigetoshi Hosaka,Hirokazu Asahara,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 858, p. 681-684, 2016
  • Band Gap Modulation of Tensile-Strained Ge by Top-Down Approach, 2016/01
  • GaOx Formation Process in Thermal Oxidation of GaN, 2016/01
  • Electrical Property of GeSn on Insulator Layer Fabricated by Lateral Liquid-Phase Epitaxy, 2016/01
  • Self-Seeded Growth of Single-Crystal GeSn Alloys on Quartz Substrate by Rapid Thermal Annealing, 2016/01
  • Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high- k gate stack, Takuji Hosoi,Yuya Minoura,Ryohei Asahara,Hiroshi Oka,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 107, No. 25, p. 252104-1-252104-5, 2015/12/21
  • Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers, Shingo Ogawa,Ryohei Asahara,Yuya Minoura,Hideki Sako,Naohiko Kawasaki,Ichiko Yamada,Takashi Miyamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Journal of Applied Physics, American Institute of Physics Inc., Vol. 118, No. 23, p. 23704-1-23704-5, 2015/12/21
  • Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology, H. Oka,Y. Minoura,R. Asahara,T. Hosoi,T. Shimura,H. Watanabe, 2015/12
  • Effect of Nitrogen Incorporation into Al-based Gate Insulator in AlGaN/GaN MOS-HEMT, R. Asahara,M. Nozaki,T. Yamada,J. Ito,S. Nakazawa,M. Ishida,T. Ueda,A. Yoshigoe,T. Hosoi,T. Shimura,H. Watanabe, 2015/12
  • SiO2/SiC Interface Nitridation by High Temperature Pure Nitrogen Annealing, T. Hosoi,A. Chanthaphan,T. Shimura,H. Watanabe, 2015/12
  • Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy, Takayoshi Shimura,Masahiro Matsue,Kohei Tominaga,Keiko Kajimura,Takashi Amamoto,Takuji Hosoi,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 107, No. 22, 2015/11/30
  • Design and demonstration of phase gratings for 2D single grating interferometer, Naoki Morimoto,Sho Fujino,Yasuhiro Ito,Amane Yamazaki,Issei Sano,Takuji Hosoi,Heiji Watanabe,Takayoshi Shimura, Optics Express, OSA - The Optical Society, Vol. 23, No. 23, p. 29399-29412, 2015/11/16
  • The Impact of Energy Barrier Height on Border Traps in III-V Gate Stacks, S. Yoshida,S. Taniguchi,H. Minari,D. Lin,Ts. Ivanov,H. Watanabe,M. Nakazawa,N. Collaert,A. Thean, 2015/11
  • Investigation of Initial Oxide Growth on GaN Epitaxial Films, T. Yamada,J. Ito,R. Asahara,M. Nozaki,S. Nakazawa,M. Ishida,T. Ueda,A. Yoshigoe,T. Hosoi,T. Shimura,H. Watanabe, 2015/11
  • Theoretical study on the identity of positive mobile ions in SiC-MOSFET and their diffusion process, H. Shirakawa,M. Araidai,K. Kamiya,H. Watanabe,K. Shiraishi, 2015/10
  • Improvement of SiO2/4H-SiC interface quality by post-oxidation annealing in N2 at high-temperatures, A. Chanthaphan,T. Hosoi,T. Shimura,H. Watanabe, 2015/10
  • Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing, A. Chanthaphan,Y. Fukushima,K. Yamamoto,M. Aketa,H. Asahara,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, 2015/10
  • Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices, Y. Katsu,T. Hosoi,Y. Nanen,T. Kimoto,T. Shimura,H. Watanabe, 2015/10
  • Origin of Anomalous Positive Charging of Water-adsorbed Thin GeO2 Films Studied by Ambient-pressure XPS, K. Arima,D. Mori,Y. Saito,H. Oka,K. Kawai,T. Hosoi,M. Morita,H. Watanabe,Z. Liu, Program and Exhibition of 16th European Conference on Application of Surface and Interface Analysis, p. 254-254, 2015/10
  • Flatband voltage shift depending on SiO2/SiC interface charges in 4H-SiC MOS capacitors with AlON/SiO2 stacked gate dielectrics, T. Hosoi,S. Azumo,K. Yamamoto,M. Aketa,Y. Kashiwagi,S. Hosaka,H. Asahara,T. Nakamura,T. Shimura,H. Watanabe, 2015/09
  • X-ray Talbot-Lau interferometer using lanthanum targets embedded in diamond substrates, A. Yamazaki,N. Morimoto,S. Fujino,Y. Ito,I. Sano,T. Hosoi,H. Watanabe,T. Shimura, 2015/09
  • 2D x-ray single grating interferometry with embedded metal targets, N. Morimoto,S. Fujino,Y. Ito,A. Yamazaki,I. Sano,T. Hosoi,H. Watanabe,T. Shimura, 2015/09
  • Development of single transmission grating Talbot-Lau interferometer with embedded tungsten targets for 30 keV x rays, Y. Ito,N. Morimoto,S. Fujino,A. Yamazaki,I. Sano,T. Hosoi,H. Watanabe,T. Shimura, 2015/09
  • Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas, Atthawut Chanthaphan,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, AIP Advances, American Institute of Physics Inc., Vol. 5, No. 9, 2015/09/01
  • Synchrotron Radiation X-Ray Photoelectron Spectroscopy Study of Interface Reactions in Al/Ti/GaN Ohmic Contacts, M. Nozaki,J. Ito,R. Asahara,S. Nakazawa,M. Ishida,T. Ueda,A. Yoshigoe,Y. Teraoka,T. Hosoi,T. Shimura,H. Watanabe, 2015/09
  • Exact evaluation of interface-reaction-limited growth in dry and wet thermal oxidation of 4H-SiC(0001) Si-face surfaces, Takuji Hosoi,Daisuke Nagai,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Vol. 54, No. 9, 2015/09/01
  • SiCパワーデバイスの高性能化に向けた酸化膜/SiC界面の評価と制御, 渡部 平司, 2015/08
  • SiC-MOS 構造の物理分析と電気特性評価に基づいた界面欠陥の理解, 渡部 平司, 先進パワー半導体分科会 第1回個別討論会テキスト, 2015/08
  • 第一原理計算によるSic界面欠陥発生メカニズム, 白石 賢二,長川 健太,白川 裕規,洗平 昌晃,神谷 克政,渡部 平司, 先進パワー半導体分科会 第1回講演会, 2015/08
  • Theoretical Studies on SiC/SiO2 Interfaces by Computational Sciences(Invited), K. Shiraishi,K. Chokawa,H. Shirakawa,M. Araidai,K. Kamiya,H. Watanabe, 2015/07
  • ゲルマニウム半導体を基盤とした次世代光電子集積デバイスへの展開 (依頼講演), 渡部 平司, 日本真空学会関西支部&日本表面科学会関西支部合同セミナー2015テキスト, 2015/07
  • Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures, Yuta Fukushima,Atthawut Chanthaphan,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 106, No. 26, 2015/06/29
  • Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures, Yuta Fukushima,Atthawut Chanthaphan,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 106, No. 26, 2015/06/29
  • Two dimensional x-ray phase imaging Using single grating interferometer with embedded xray targets, Naoki Morimoto,Sho Fujino,Amane Yamazaki,Yasuhiro Ito,Takuji Hosoi,Heiji Watanabe,Takayoshi Shimura, Optics Express, OSA - The Optical Society, Vol. 23, No. 13, p. 16582-16588, 2015/06/29
  • Comprehensive study and design of scaled metal/high- k /Ge gate stacks with ultrathin aluminum oxide interlayers, Ryohei Asahara,Iori Hideshima,Hiroshi Oka,Yuya Minoura,Shingo Ogawa,Akitaka Yoshigoe,Yuden Teraoka,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 106, No. 23, 2015/06/08
  • Schottky barrier height modulation at NiGe/Ge interface by phosphorous ion implantation and its application to Ge-based CMOS devices, T. Hosoi,H. Oka,Y. Minoura,T. Shimura,H. Watanabe, The 15th International Workshop on Junction Technology (IWJT2015), 2015/06
  • Development of Advanced SiC- based Power Devices based on Surface and Interface Science (Invited), H. Watanabe,T. Hosoi, 2015/03
  • Fabrication of high-quality Ge-on-insulator structures by lateral liquid phase epitaxy, T. Shimura,Y. Suzuki,M. Matsue,K. Kajimura,K. Tominaga,T. Amamoto,T. Hosoi,H. Watanabe, ECS Transactions, Electrochemical Society Inc., Vol. 69, No. 5, p. 305-311, 2015
  • Improving interface quality of 4H-SiC MOS devices with high temperature oxidation process in mass produce furnace, Heng Yu Xu,Qian Yang,Xiao Lei Wang,Xin Yu Liu,Yan Li Zhao,Cheng Zhan Li,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 821-823, p. 484-487, 2015
  • Photoluminescence Study of Band Gap Modulation of GeSn Wires Fabricated by Lateral Liquid-Phase Epitaxy, T. Amamoto,K. Tominaga,K. Kajimura,M. Matsue,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 20th Workshop on Gate Stack Technology and Physics, 2015/01
  • First Principles Study of Proton Diffusion in SiO2 Dielectric Layer of SiC-MOSFET, H. Shirakawa,M. Araidai,K. Kamiya,H. Watanabe,K. Shiraishi, Extended Abstracts of the 20th Workshop on Gate Stack Technology and Physics, 2015/01
  • Understanding of Bias-Temperature Instability due to Mobile Ions in SiC Metal-Oxide-Semiconductor Devices, A. Chanthaphan,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, 応用物理学会 薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会アブストラクト集「ゲートスタック研究会 ―材料・プロセス・評価の物理―」(第20回研究会), 2015/01
  • First Principles Study of SiC/SiO2 Interfaces towards Future Power Devices, K. Shiraishi,K. Chokawa,H. Shirakawa,K. Endo,M. Araidai,K. Kamiya,H. Watanabe, 2014 IEEE International Electron Devices Meeting (IEDM), 2014/12
  • Fabrication of GeSn-on-insulator Structure by Utilizing Lateral Liquid-Phase Epitaxy, T. Hosoi,K. Kajimura,K. Tominaga,T. Shimura,H. Watanabe, Abstracts, 45th IEEE Semiconductor Interface Specialists Conference, 2014/12
  • Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology, H. Oka,Y. Minoura,R. Asahara,T. Hosoi,T. Shimura,H. Watanabe, Abstracts, 45th IEEE Semiconductor Interface Specialists Conference, 2014/12
  • Improved electrical properties of 4H-SiC MOS devices with high temperature oxidation, 2014/11
  • Detection of structural defects in thermally-grown SiO2/SiC by cathodoluminescence, 2014/11
  • Relationship between oxidizing species and oxide growth rate in thermal oxidation on 4H-SiC(0001), 2014/11
  • Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy, Takuji Hosoi,Yuichiro Suzuki,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 105, No. 17, p. 173502-1-173502-4, 2014/10/27
  • Synchrotron radiation photoemission spectroscopy study of SiO2/4H-SiC(0001) interfaces with NO annealing, T. Hosoi,Y. Nanen,T. Kimoto,A. Yoshigoe,Y. Teraoka,T. Shimura,H. Watanabe, 10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014), 2014/09
  • Theoretical studies of carbon related defect generation in SiO2/4H-SiC(0001) interface induced by oxidation, K. Endo,K. Chokawa,H. Shirakawa,M. Araidai,K. Kamiya,T. Hosoi,H. Watanabe,K. Shiraishi, 10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014), 2014/09
  • Survey approach for improving interface quality of 4H-SiC MOS devices with high temperature oxidation process in mass produce furnace, H. Xu,Q. Yang,X. Liu,Y. Zhao,C. Li,H. Watanabe, 10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014), 2014/09
  • Understanding and engineering of NiGe/Ge junction formed by phosphorous ion implantation after germanidation, Hiroshi Oka,Yuya Minoura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 105, No. 6, p. 062107-1-062107-4, 2014/08/11
  • X-ray Phase Contrast Imaging with a Single Grating Talbot-Lau Interferometer, N. Morimoto,S. Fujino,K. Ohshima,J. Harada,T. Hosoi,H. Watanabe,T. Shimura, International Union of Materials Research Societies- The 15th IUMRS International Conference in Asia 2014(IUMRS-ICA 2014), 2014/08
  • X-ray phase contrast imaging by compact Talbot–Lau interferometer with a single transmission grating, N. Morimoto,S. Fujino,K. Ohshima,J. Harada,T. Hosoi,H. Watanabe,T. Shimura, Optics Letters, Vol. 39, No. 15, p. 4297-4300, 2014/07
  • 極薄EOT high-k/Geゲートスタックの熱安定性及び界面特性改善に向けたプロセス設計, 淺原 亮平,細井 卓治,志村 考功,渡部 平司, 電子情報通信学会 シリコン材料・デバイス(SDM)研究会, 信学技報, Vol. 114, No. 88, p. 1-5, 2014/06
  • Schottky Barrier Height Reduction of NiGe/Ge Junction by P Ion Implantation for Metal Source/Drain Ge CMOS Devices, H. Oka,Y. Minoura,T. Hosoi,T. Shimura,H. Watanabe, The 2014 International Meeting for Future of Electron Devices, Kansai, 2014/06
  • Sub-1-nm EOT Schottky Source/Drain Germanium CMOS Technology with Low-temperature Self-aligned NiGe/Ge Junctions, T. Hosoi,Y. Minoura,R. Asahara,H. Oka,T. Shimura,H. Watanabe, 2014 IEEE Silicon Nanoelectronics Workshop (SNW), 2014/06
  • Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics, Atthawut Chanthaphan,Takuji Hosoi,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, American Institute of Physics Inc., Vol. 104, No. 12, p. 122105-1-122105-5, 2014/03/24
  • Controlled charged amino acids of Ti-binding peptide forsurfactant-free selective adsorption, M. Fukuta,B. Zheng,M. Uenumab,N. Okamoto,Y. Uraoka,I. Yamashita,H. Watanabe, Colloids and Surfaces B: Biointerfaces, 2014/03
  • Development of Multiline Embedded X-ray Targets for Compact Talbot-Lau X-ray Interferometer, N. Morimoto,S. Fujino,K. Ohshima,J. Harada,T. Hosoi,H. Watanabe,T. Shimura, Program & Abstracts of International Workshop on Atomically Controlled Fabrication Technology, 2014/02
  • Bias-temperature instability of SiC-MOS devices induced by unusual generation of mobile ions in thermal oxides, A. Chanthaphan,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Program & Abstracts of International Workshop on Atomically Controlled Fabrication Technology, 2014/02
  • Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy, Masahiro Matsue,Yuhsuke Yasutake,Susumu Fukatsu,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 104, No. 3, p. 031106-1-031106-4, 2014/01/20
  • Insights into ultraviolet-induced electrical degradation of thermally grown SiO2/4H-SiC(0001) interface, Daisuke Ikeguchi,Takuji Hosoi,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 104, No. 1, p. 012107-1-012107-4, 2014/01/06
  • Ambient-pressure XPS study of GeO2/Ge(100) and SiO2/Si(100) at controlled relative humidity, K. Arima,Y. Kawai,Y. Minoura,Y. Saito,D. Mori,H. Oka,K. Kawai,T. Hosoi,Z. Liu,H. Watanabe,M. Morita, ECS Transactions, Electrochemical Society Inc., Vol. 64, No. 8, p. 77-82, 2014
  • Phosphorous ion implantation into NiGe layer for Ohmic contact formation on n-type Ge, Yuya Minoura,Hiroshi Oka,Takuji Hosoi,Jin Matsugaki,Shin-Ichiro Kuroki,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Vol. 53, No. 8, 2014
  • Retarded oxide growth on 4H-SiC(0001) substrates due to sacrificial oxidation, Takuji Hosoi,Yusuke Uenishi,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 778-780, p. 562-565, 2014
  • Degradation of SiO2/SiC interface properties due to mobile ions intrinsically generated by high-temperature hydrogen annealing, Atthawut Chanthaphan,Takuji Hosoi,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 778-780, p. 541-544, 2014
  • X-ray phase contrast imaging by compact Talbot-Lau interferometer without absorption grating, N. Morimoto,S. Fujino,K. Ohshima,J. Harada,T. Hosoi,H. Watanabe,T. Shimura, International Workshop on X-ray and Neutron Phase Imaging with Gratings (XNPIG2014), 2014/01
  • Design of compact Talbot-Lau interferometer with embedded X-ray targets disregarding Talbot distance, S. Fujino,N. Morimoto,K. Ohshima,J. Harada,T. Hosoi,H. Watanabe,T. Shimura, International Workshop on X-ray and Neutron Phase Imaging with Gratings (XNPIG2014), 2014/01
  • Photoluminescence Study of Band Gap Modulation of Ge Wires Fabricated by Lateral Liquid-Phase Epitaxy, K. Kajimura,M. Matsue,Y. Yasutake,S. Fukatsu,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 19th Workshop on Gate Stack Technology and Physics, 2014/01
  • Ohmic Contact Formation on n-Ge by P Ion Implantation into NiGe/Ge Junction, H. Oka,Y. Minoura,T. Hosoi,J. Matsugaki,S. Kuroki,T. Shimura,H. Watanabe, Extended Abstracts of the 19th Workshop on Gate Stack Technology and Physics, 2014/01
  • High-k/Ge Gate Stack with an Extremely Thin-EOT by Controlling Interface Reaction Using Ultrathin AlOx Interlayer, R. Tanaka,I. Hideshima,Y. Minoura,A. Yoshigoe,Y. Teraoka,T. Hosoi,T. Shimura,H. Watanebe, Extended Abstracts of the 19th Workshop on Gate Stack Technology and Physics, 2014/01
  • Comparison of Wetting Properties between GeO2/Ge and SiO2/Si Revealed by In-situ XPS, Kenta Arima,Yoshie Kawai,Yuya Minoura,Yusuke Saito,Daichi Mori,Kentaro Kawai,Takuji Hosoi,Mizuho Morita,Heiji Watanabe,Zhi Liu, Extended Abstracts of the 19th Workshop on Gate Stack Technology and Physics, The Japan Society of Applied Physics, 2014/01
  • Development of Advanced SiC-MOS Power Devices based on Surface and Interface Analysis (Invited), Heiji Watanabe, Reports on Topical Meeting of the Vacuum Society of Japan, 2013-4, 2013/12
  • Interface engineering SiC-MOS devices using HfO2 interfacial layer, 2013/12
  • Improved BTI characteristics of SiC MOS devices by using AlON/thermal SiO2 dielectrics, 2013/12
  • Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy –Material and strain engineering toward CMOS compatible group-Ⅳ photonics-, M. Matsue,Y. Yasutake,S. Fukatsu,T. Hosoi,T. Shimura,H. Watanabe, Abstracts, 44th IEEE Semiconductor Interface Specialists Conference, 2013/12
  • High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling Interface Reaction Using Ultrathin AlOx Interlayer, T. Hosoi,I. Hideshima,R. Tanaka,Y. Minoura,A. Yoshigoe,Y. Teraoka,T. Shimura,H. Watanabe, Abstracts, 44th IEEE Semiconductor Interface Specialists Conference, 2013/12
  • Electrical and physical properties of SiO2 gate dielectrics grown on 4H-SiC (Invited), T. Hosoi,Y. Uenishi,A. Chanthaphan,D. Ikeguchi,Y. Nakano,T. Nakamura,T. Shimura,H. Watanabe, The 8th international conference on advanced materials upon the proven concept and continues the tradition of its seven predecessors (THERMEC2013), 2013/12
  • Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay, T. Hosoi,Y. Suzuki,H. Nishikawa,M. Matsue,T. Shimura,H. Watanabe, Extended Abstracts of 2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013), 2013/11
  • Phosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge, Y. Minoura,T. Hosoi,J. Matsugaki,S. Kuroki,T. Shimura,H. Watanabe, Extended Abstracts of 2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013), 2013/11
  • Interaction of Water Vapor with GeO2/Ge(100) Revealed by In Situ XPS under Controlled Relative Humidity, K. Arima,A. Mura,I. Hideshima,T. Hosoi,H. Watanabe,Z. Liu, Abstracts of 15th European Conference on Applications of Surface and Interface Analysis, 2013/10
  • Retarded Oxide Growth on 4H-SiC(0001) Substrates Due to Sacrificial Oxidation, T. Hosoi,Y. Uenishi,Y. Nakano,T. Nakamura,T. Shimura,H. Watanabe, International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), 2013/10
  • Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing, A. Chanthaphan,T. Hosoi,Y. Nakano,T. Nakamura,T. Shimura,H. Watanabe, International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), 2013/10
  • Suppression of Mobile Ion Diffusion with AlON/SiO2 Stacked Gate Dielectrics for Improving Bias-Temperature Instability in SiC-MOS Devices, A. Chanthaphan,T. Hosoi,Y. Nakano,T. Nakamura,T. Shimura,H. Watanabe, International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), 2013/10
  • Insight of Selective Adsorption Mechanism of Titanium-binding Peptide, M. Fukuta,B. Zheng,M. Uenuma,I. Yamashita,Y. Uraoka,H. Watanabe, 2013 JSAP-MRS Joint Symposia, 2013/09
  • Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics, Yuya Minoura,Atsushi Kasuya,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 103, No. 3, 2013/07/15
  • T. Yamamoto, S. Ogawa, T. Hosoi, T. Shimura, and H. Watanabe, Characterization of,Interface Structure of,Metal Gate,High-k Gate Dielectric, The 77th Symposium on Semiconductors and Integrated Circuits Technology, 2013/07
  • Nanoscale Interaction of Water with Germanium Surfaces: Wetting, Etching and Machining properties, Kenta Arima,Kentaro Kawai,Takuji Hosoi,Junichi Uchikoshi,Zhi Liu,Heiji Watanabe,Mizuho Morita, Program and Abstract of Collaborative Conference on 3D & Materials Research (CC3DMR) 2013, 2013/06
  • Implementation of High-k Gate Dielectrics in Silicon Carbide Power MOS Devices (Invited), H. Watanabe, 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2013), 2013/06
  • 熱酸化SiC-MOS界面物性の理解と制御 (Invited), 渡部 平司, 日本結晶成長学会ナノ構造・エピタキシャル 成長分科会主催SiC結晶成長講演会, 2013/06
  • Implementation of High-k Gate Dielectrics in SiC Power MOSFET (Invited), T. Hosoi,S. Azumo,Y. Kashiwagi,S. Hosaka,R. Nakamura,Y. Nakano,H. Asahara,T. Nakamura,T. Kimoto,T. Shimura,H. Watanabe, IEICE Technical Committee on Silicon Device and Materials (SDM), 2013/06
  • Germanide Formation in Metal/High-k/Ge Gate Stacks, T. Hosoi,I. Hideshima,Y. Minoura,R. Tanaka,A. Yoshigoe,Y. Teraoka,T. Shimura,H. Watanabe, IEICE Technical Committee on Silicon Device and Materials (SDM), 2013/06
  • Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices (Invited), H. Watanabe,A. Chanthaphan,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura, IEICE Technical Committee on Silicon Device and Materials (SDM), 2013/06
  • Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions, Atthawut Chanthaphan,Takuji Hosoi,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 102, No. 9, 2013/03/04
  • Electrical detection of surface plasmon resonance phenomena by a photoelectronic device integrated with gold nanoparticle plasmon antenna, Tatsuya Hashimoto,Yurie Fukunishi,Bin Zheng,Yukiharu Uraoka,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 102, No. 8, 2013/02/25
  • Hard x-ray phase contrast imaging using a tabletop Talbot-Lau interferometer with multiline embedded x-ray targets, Takayoshi Shimura,Naoki Morimoto,Sho Fujino,Takaharu Nagatomi,Keni-Chi Oshima,Jimpei Harada,Kazuhiko Omote,Naohisa Osaka,Takuji Hosoi,Heiji Watanabe, Optics Letters, Vol. 38, No. 2, p. 157-159, 2013/01/15
  • Water growth on GeO2/Ge(100) stack and its effect on the electronic properties of GeO2, Atsushi Mura,Iori Hideshima,Zhi Liu,Takuji Hosoi,Heiji Watanabe,Kenta Arima, Journal of Physical Chemistry C, ACS publications, Vol. 117, No. 1, p. 165-171, 2013/01/10
  • Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin, Mutsunori Uenuma,Bin Zheng,Kosuke Bundo,Masahiro Horita,Yasuaki Ishikawa,Heiji Watanabe,Ichiro Yamashita,Yukiharu Uraoka, Journal of Crystal Growth, Vol. 382, p. 31-35, 2013
  • Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties, Takuji Hosoi,Iori Hideshima,Ryohei Tanaka,Yuya Minoura,Akitaka Yoshigoe,Yuden Teraoka,Takayoshi Shimura,Heiji Watanabe, Microelectronic Engineering, Vol. 109, p. 137-141, 2013
  • Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties, Takuji Hosoi,Iori Hideshima,Ryohei Tanaka,Yuya Minoura,Akitaka Yoshigoe,Yuden Teraoka,Takayoshi Shimura,Heiji Watanabe, Microelectronic Engineering, Vol. 109, p. 137-141, 2013
  • Dielectric properties of thermally grown SiO2 on 4H-SiC(0001) substrates, Takuji Hosoi,Yusuke Uenishi,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Vol. 740-742, p. 605-608, 2013
  • Novel approach for improving interface quality of 4H-SiC MOS devices with UV irradiation and subsequent thermal annealing, Heiji Watanabe,Daisuke Ikeguchi,Takashi Kirino,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura, Materials Science Forum, Vol. 740-742, p. 741-744, 2013
  • AlONゲート絶縁膜導入によるSiCパワーMOSFETの高性能化及び信頼性向上, 細井 卓治,東雲 秀司,柏木 勇作,保坂 重敏,中村 亮太,箕谷 周平,中野 佑紀,浅原 浩和,中村 孝,木本 恒暢,志村 考功,渡部 平司, 電子情報通信学会 シリコン材料・デバイス研究会(SDM), 2013/01
  • Effect of Water Adsorption on GeO2/Ge Structures Studied by In-situ XPS under Controlled Relative Humidity, Kenta Arima,Atsushi Mura,Iori Hideshima,Takuji Hosoi,Heiji Watanabe,Zhi Liu, Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics, 2013/01
  • Evaluation of the Carrier Mobility of Ge-on-Insulator MOSFET Formed by Lateral Liquid-Phase Epitaxy, M. Matsue,Y. Suzuki,H. Nishikawa,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics, 2013/01
  • Interface Engineering between Metal Electrode and GeO2 Dielectric for Future Ge-Based Metal-Oxide-Semiconductor Technologies, S. Ogawa,I. Hideshima,Y. Minoura,T. Yamamoto,A. Yasui,H. Miyata,K. Kimura,T. Hosoi,T. Shimura,H. Watanab, 応用物理学会 薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会アブストラクト集「ゲートスタック研究会 ―材料・プロセス・評価の物理―」(第18回研究会), 2013/01
  • Unusual Generation and Elimination of Mobile Ions in Thermally Grown SiO2 on 4H-SiC(0001), A. Chanthaphan,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics, 2013/01
  • Gate Stack Technology for High Performance Ge MOSFETs with Ultrathin GeON Gate Dielectrics, Y. Minoura,A. Kasuya,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics, 2013/01
  • Effect of Water Growth on Quality of GeO2/Ge Revealed by in-situ XPS, Kenta Arima,Atsushi Mura,Iori Hideshima,Takuji Hosoi,Heiji Watanabe,Zhi Liu, Symposium Program of SSNS'13, 2013/01
  • The adsorption mechanism of titanium-binding ferritin to amphoteric oxide, M. Fukuta,N. Zettsu,I. Yamashita,Y. Uraoka,H. Watanabe, Colloid and Surfaces B: Biointerfaces, 2013/01
  • Fundamental Aspects of Silicon Carbide Oxidation, H. Watanabe,T. Hosoi, Physics and Technology of Silicon Carbide Devices, ISBN 978-953-51-0917-4, 2012/12
  • Evaluation of Carrier Mobility Characteristics of Ge-on-Insulator MOSFET Formed by Lateral Liquid-Phase Epitaxy, M. Matsue,Y. Suzuki,H. Nishikawa,T. Hosoi,T. Shimura,H. Watanabe, 8th Handai Nanoscience and nanotechnology International Symposium, 2012/12
  • Improvement of Ultrathin GeON/Ge Interface Properties for High-mobility Ge MOSFETs, I. Hideshima,Y. Minoura,A. Kasuya,T. Hosoi,T. Shimura,H. Watanabe, 8th Handai Nanoscience and nanotechnology International Symposium, 2012/12
  • Mobile Ions Generated in Thermal SiO2 on SiC by Hydrogen Passivation and Its Impact on Interface Property, T. Hosoi,A. Chanthaphan,S. Mitani,Y. Nakano,T. Nakamura,T. Shimura,H. Watanabe, The 43rd IEEE Semiconductor Interface Specialists Conference, 2012/12
  • Implementation of GeON Gate Dielectrics for Dual-Channel Ge CMOS Technology, Y. Minoura,A. Kasuya,T. Hosoi,T. Shimura,H. Watanabe, The 43rd IEEE Semiconductor Interface Specialists Conference, 2012/12
  • Al-inserted TiN Gate Electrodes with Low-Pressure Oxidation for Effective Work Function Control of Gate-First Poly-Si/TiN/HfSiO Stacks, K. Chikaraishi,T. Minami,N. Kitano,T. Seino,N. Yamaguchi,T. Nakagawa,T. Hosoi,T. Shimura,H. Watanabe, The 43rd IEEE Semiconductor Interface Specialists Conference, 2012/12
  • Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001), Takuji Hosoi,Takashi Kirino,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Current Applied Physics, Vol. 12, No. 3, p. S79-S82, 2012/12
  • Synchrotron X-ray topography of supercritical-thickness strained silicon-on-insulator wafers for crystalline quality evaluation and electrical characterization using back-gate transistors, T. Shimura,D. Shimokawa,T. Matsumiya,N. Morimoto,A. Ogura,S. Iida,T. Hosoi,H. Watanabe, Current Applied Physics, Vol. 12, No. 3, p. S69-S74, 2012/12
  • Effective work function control of metal inserted poly-Si electrodes on HfSiO dielectrics by in-situ oxygen treatment of metal surface, Naomu Kitano,Keisuke Chikaraishi,Hiroaki Arimura,Takuji Hosoi,Takayoshi Shimura,Takashi Nakagawa,Heiji Watanabe, Current Applied Physics, Vol. 12, No. 3, p. S83-S86, 2012/12
  • Al2O3/GeO2 stacked gate dielectrics formed by post-deposition oxidation of ultrathin metal Al layer directly grown on Ge substrates, Iori Hideshima,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Current Applied Physics, Vol. 12, No. 3, p. S75-S78, 2012/12
  • Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices - Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics, Heiji Watanabe,Katsuhiro Kutsuki,Atsushi Kasuya,Iori Hideshima,Gaku Okamoto,Shoichiro Saito,Tomoya Ono,Takuji Hosoi,Takayoshi Shimura, Current Applied Physics, Vol. 12, No. 3, p. S10-S19, 2012/12
  • High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy, Yuichiro Suzuki,Shimpei Ogiwara,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 101, No. 20, 2012/11/12
  • Interface engineering between metal electrode and GeO2 dielectric for future Ge-based metal-oxide-semiconductor technologies, Shingo Ogawa,Iori Hideshima,Yuya Minoura,Takashi Yamamoto,Asami Yasui,Hiroaki Miyata,Kosuke Kimura,Toshihiko Ito,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 101, No. 20, 2012/11/12
  • Fabrication of High-quality SiGe-on-Insulator and Ge-on-Insulator Structures by Rapid Melt Growth (Invited), T. Shimura,C. Yoshimoto,T. Hashimoto,S. Ogiwara,Y. Suzuki,T. Hosoi,H. Watanabe, The International Symposium on Visualization in Joining & Welding Science through Advanced Measurements and Simulation (Visual-JW2012), 2012/11
  • Fabrication of Ge-on-insulator structure by lateral liquid-phase epitaxy and its electrical characterization using back-gate transistors, T. Shimura,Y. Suzuki,S. Ogiwara,T. Hosoi,H. Watanabe, The 6th International Symposium on Advanced Science and Technology of Silicon Materials, 2012/11
  • Investigation of relative permittivity of thermal oxides on 4H-SiC, 2012/11
  • Mechanism of UV-induced defect generation in thermally grown SiO2/SiC structures, 2012/11
  • Elimination of mobile ions in thermal oxide grown on 4H-SiC by utilizing bias-temperature stress, 2012/11
  • 熱酸化SiO2/SiC 界面原子構造と界面電気特性の評価, 渡部平司,細井卓治, 表面科学, 2012/11
  • High-k ゲートスタック技術の進展と最新動向, 渡部平司,細井卓治, 電子情報通信学会誌, 2012/11
  • Germanium Nitride Interface Layer for High-k/Ge Gate Stacks, T. Hosoi,G. Okamoto,K. Kutsuki,I. Hideshima,A. Yoshigoe,Y. Teraoka,T. Shimura,H. Watanabe, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Evaluation of Carrier Mobility in Local GOI Structures Formed by Lateral Liquid-Phase Epitaxy, Y. Suzuki,S. Ogiwara,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Application of Multiline Embedded X-ray Targets to X-ray Talbot-Lau Interferometer, N. Morimoto,S. Fujino,T. Nagatomi,K. Ohshima,J. Harada,K. Omote,N. Osaka,T. Hosoi,H. Watanabe,T. Shimura, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • High-quality Fully Relaxed SiGe Layers Fabricated on Silicon-on-Insulator Wafers by Rapid Melt Growth, T. Shimura,S. Ogiwara,C. Yoshimoto,T. Hosoi,H. Watanabe, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Improvement of Thermal SiO2/4H-SiC Interface by UV Irradiation and Subsequent High Temperature Annealing, D. Ikeguchi,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Interface Engineering between Metal Electrode and GeO2 Dielectric for Future Ge-based Metal-Oxide-Semiconductor Technologies, S. Ogawa,I. Hideshima,Y. Minoura,T. Yamamoto,A. Yasui,H. Miyata,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Process Optimization of GeON/Ge Gate Stacks for High-mobility Ge-based CMOS Devices, Y. Minoura,A. Kasuya,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Advanced Poly-Si/TiN Gate Electrode for Gate-first Metal/high-k PMOSFET, K. Chikaraishi,T. Minami,N. Kitano,T. Seino,N. Yamaguchi,T. Nakagawa,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Gate Stack Technology for Next-Generation Green Electronics, H. Watanabe,T. Shimura,T. Hosoi, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Elimination of Mobile Ions in Thermal Oxide of SiC MOS Devices, A. Chanthaphan,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Fabrication and Evaluation of Photoelectronic Devices Integrated with Gold Nanoparticle Plasmon Antenna, T. Hashimoto,Y. Fukunishi,Z. Bin,Y. Uraoka,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology, 2012/10
  • Fabrication of high-quality GOI and SGOI structures by rapid melt growth method - Novel platform for high-mobility transistors and photonic devices - (Invited), H. Watanabe,Y. Suzuki,S. Ogiwara,N. Kataoka,T. Hashimoto,T. Hosoi,T. Shimura, Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiMe 2012), 2012/10
  • SiCパワーデバイス開発と評価技術 -高性能 SiC-MOSFET 実現に向けた熱酸化膜形成過程と MOS界面特性の理解-, 渡部 平司, 応用物理学会 薄膜・表面物理分科会 News Letter -半導体SiCの基礎と応用-, 2012/09
  • Characterization of multicrystalline Si in solar modules by synchrotron white x-ray microbeam diffraction, T. Shimura,T. Matsumiya,N. Morimoto,S. Fujino,T. Hosoi,K. Kajiwara,J. Chen,T. Sekiguchi,H. Watanabe, Abstracts of 11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging (XTOP 2012), 2012/09
  • Effective Work Function Control of MIPS/High-k Gate Stacks by Al-Incorporation and in situ Low-Pressure Oxidation of TiN Surface, K. Chikaraishi,T. Minami,N. Kitano,T. Seino,N. Yamaguchi,T. Nakagawa,T. Hosoi,T. Shimura,H. Watanabe, Program and Abstrats of Plenary, Forums, Somiya Award and Special Lecture, IUMRS-ICEM 2012, 2012/09
  • Rapid Melt Growth of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Substrates, T. Shimura,S. Ogiwara,Y. Suzuki,C. Yoshimoto,T. Hosoi,H. Watanabe, Program and Abstrats of Plenary, Forums, Somiya Award and Special Lecture, IUMRS-ICEM 2012, 2012/09
  • Development of multiline embedded X-ray targets for X-ray phase contrast imaging, N. Morimoto,S. Fujino,T. Nagatomi,K. Ohshima,J. Harada,K. Omote,N. Osaka,T. Hosoi,H. Watanabe,T. Shimura, Abstracts of 11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging (XTOP 2012), 2012/09
  • Dielectric properties of thermally grown SiO2 on 4H-SiC (0001) substrates, T. Hosoi,Y. Uenishi,S. Mitani,Y. Nakano,T. Nakamura,T. Shimura,H. Watanabe, 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012), 2012/09
  • Novel approach for improving interface quality of 4H-SiC MOS devices with UV irradiation and subsequent thermal annealing, H. Watanabe,D. Ikeguchi,T. Kirino,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura, 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012), 2012/09
  • Practical protein removal using atmospheric-pressure helium plasma for densely packed gold nanoparticle arrays assembled by ferritin-based encapsulation/transport system, Tatsuya Hashimoto,Nobuyuki Zettsu,Bin Zheng,Megumi Fukuta,Ichiro Yamashita,Yukiharu Uraoka,Heiji Watanabe, Applied Physics Letters, Vol. 101, No. 7, 2012/08/13
  • Fabrication of Au / Pt Binary-Component Metal Nanodot Array by Electrostatistically-Driven Colloidal Self-Assembly, R. Sumi,N. Zettsu,T. Ueno,T. Hosoi,H. Watanabe,N. Saito, International Union of Materials Research Society - International Conference in Asia – 2012 (IUMRS-ICA-2012), 2012/08
  • Investigation of unusual mobile ion effects in thermally grown SiO 2 on 4H-SiC(0001) at high temperatures, Atthawut Chanthaphan,Takuji Hosoi,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 100, No. 25, 2012/06/18
  • Gate Stack Technologies for Silicon Carbide Power MOS Devices (Invited), T. Hosoi,T. Kirino,Y. Uenishi,D. Ikeguchi,A. Chanthaphan,A. Yoshigoe,Y. Teraoka,S. Mitani,Y. Nakano,T. Nakamura,T. Shimura,H. Watanabe, 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012), 2012/06
  • Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks, T. Hosoi,Y. Odake,H. Arimura,K. Chikaraishi,N. Kitano,T. Shimura,H. Watanabe, IEICE Technical Committee on Silicon Device and Materials (SDM), 2012/06
  • High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics, Y. Minoura,A. Kasuya,T. Hosoi,T. Shimura,H. Watanabe, IEICE Technical Committee on Silicon Device and Materials (SDM), 2012/06
  • Insight into Bias-temperature Instability of 4H-SiC MOS Devices with Thermally Grown SiO2 Dielectrics, Atthawut Chanthaphan,Takashi Kirino,Yusuke Uenishi,Daisuke Ikeguchi,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2012 MRS Spring Meeting, 2012/04
  • Comprehensive study of the X-ray photoelectron spectroscopy peak shift of La-incorporated Hf oxide for gate dielectrics, Takashi Yamamoto,Shingo Ogawa,Jun-Ichi Tsuji,Koji Kita,Katsunori Tagami,Tsuyoshi Uda,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 51, No. 4, 2012/04
  • 放射光X 線トポグラフィによる極薄ひずみSi 層の結晶性評価, 志村考功,細井卓治,渡部平司, 日本結晶学会誌, 2012/03
  • Compact X-ray Talbot-Lau interferometer with multiline embedded X-ray targets, N. Morimoto,S. Fujino,T. Nagatomi,K. Ohshima,J. Harada,K. Omote,N. Osaka,T. Hosoi,T. Shimura,H. Watanabe, Program of International Workshop on X-ray and Neutron Phase Imaging with Gratings, 2012/03
  • Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics, Takuji Hosoi,Shuji Azumo,Yusaku Kashiwagi,Shigetoshi Hosaka,Ryota Nakamura,Shuhei Mitani,Yuki Nakano,Hirokazu Asahara,Takashi Nakamura,Tsunenobu Kimoto,Takayoshi Shimura,Heiji Watanabe, Technical Digest - International Electron Devices Meeting, IEDM, 2012
  • Fabrication of high-quality goi and sgoi structures by rapid melt growth method - Novel platform for high-mobility transistors and photonic devices - Novel p, Heiji Watanabe,Yuichiro Suzuki,Shimpei Ogiwara,Nobuaki Kataoka,Tatsuya Hashimoto,Takuji Hosoi,Takayoshi Shimura, ECS Transactions, Vol. 50, No. 4, p. 261-266, 2012
  • Analysis of lattice distortion in multicrystalline silicon for photovoltaic cells by synchrotron white x-ray micro beam diffraction, Takayoshi Shimura,Takuya Matsumiya,Naoki Morimoto,Takuji Hosoi,Kentaro Kajiwara,Jun Chen,Takashi Sekiguchi,Heiji Watanabe, Materials Science Forum, Vol. 725, p. 153-156, 2012
  • Oxygen-induced high-k degradation in TiN/HfSiO gate stacks, Takuji Hosoi,Yuki Odake,Keisuke Chikaraishi,Hiroaki Arimura,Naomu Kitano,Takayoshi Shimura,Heiji Watanabe, 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012, 2012
  • Impact of UV irradiation on thermally grown 4H-SiC MOS devices, Daisuke Ikeguchi,Takashi Kirino,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Vol. 717-720, p. 765-768, 2012
  • Impact of interface defect passivation on conduction band offset at SiO 2/4H-SiC interface, Takuji Hosoi,Takashi Kirino,Atthawut Chanthaphan,Yusuke Uenishi,Daisuke Ikeguchi,Akitaka Yoshigoe,Yuden Teraoka,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Vol. 717-720, p. 721-724, 2012
  • Synchrotron radiation photoelectron spectroscopy study of thermally grown oxides on 4H-SiC(0001) Si-face and (000-1) C-face substrates, Heiji Watanabe,Takuji Hosoi,Takashi Kirino,Yusuke Uenishi,Atthawut Chanthaphan,Akitaka Yoshigoe,Yuden Teraoka,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura, Materials Science Forum, Vol. 717-720, p. 697-702, 2012
  • Impact of Si diffusion barrier formed on TiN surface by in-situ oxygen treatment process for advanced gate-first metal/high-k stacks, N. Kitano,K. Chikaraishi,H. Arimura,T. Hosoi,T. Shimura,T. Seino,H. Watanabe,T. Nakagawa, ECS Transactions, Vol. 45, No. 3, p. 145-149, 2012
  • Impact of Si diffusion barrier formed on TiN surface by in-situ oxygen treatment process for advanced gate-first metal/high-k stacks, N. Kitano,K. Chikaraishi,H. Arimura,T. Hosoi,T. Shimura,T. Seino,H. Watanabe,T. Nakagawa, ECS Transactions, Vol. 45, No. 3, p. 145-149, 2012
  • Metal-nanoparticle-induced crystallization of amorphous Ge film using ferritin, Mutsunori Uenuma,Bin Zheng,Takanori Imazawa,Masahiro Horita,Takashi Nishida,Yasuaki Ishikawa,Heiji Watanabe,Ichiro Yamashita,Yukiharu Uraoka, Applied Surface Science, 2012/01
  • Evaluation of the Electrical Properties of Single-Crystalline Ge-on-Insulator Structures Formed by Lateral Liquid-Phase Epitaxy, Yuichiro Suzuki,Shimpei Ogiwara,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of the 17th Workshop on Gate Stack Technology and Physics, 2012/01
  • Residual Order in the Thermally Oxidized Thin Film on Ge Substrates, Takayoshi Shimura,Daisuke Shimokawa,Takuya Matsumiya,Takuji Hosoi,Heiji Watanabe, Extended Abstracts of the 17th Workshop on Gate Stack Technology and Physics, 2012/01
  • Water Growth on GeO2 Surface Revealed by In-situ XPS under Controlled Relative Humidity, Kenta Arima,Atsushi Mura,Iori Hideshima,Takuji Hosoi,Heiji Watanabe,Zhi Liu, Extended Abstracts of the 17th Workshop on Gate Stack Technology and Physics, 2012/01
  • Effective Work Function Control of Poly-Si/TiN/HfSiO/SiO2 Gate Stacks by in situ Low-pressure Oxidation of TiN Electrode Surface, Keisuke Chikaraishi,Naomu Kitano,Hiroaki Arimura,Takuji Hosoi,Takayoshi Shimura,Takashi Nakagawa,Heiji Watanabe, Extended Abstracts of the 17th Workshop on Gate Stack Technology and Physics, 2012/01
  • Impact of interface defect passivation on conduction band offset at SiO 2/4H-SiC interface, Takuji Hosoi,Takashi Kirino,Atthawut Chanthaphan,Yusuke Uenishi,Daisuke Ikeguchi,Akitaka Yoshigoe,Yuden Teraoka,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Vol. 717-720, p. 721-724, 2012
  • Synchrotron radiation photoelectron spectroscopy study of thermally grown oxides on 4H-SiC(0001) Si-face and (000-1) C-face substrates, Heiji Watanabe,Takuji Hosoi,Takashi Kirino,Yusuke Uenishi,Atthawut Chanthaphan,Akitaka Yoshigoe,Yuden Teraoka,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura, Materials Science Forum, Vol. 717-720, p. 697-702, 2012
  • Control of selective adsorption behavior of Ti-binding ferritin on a SiO 2 substrate by atomic-scale modulation of local surface charges, Tatsuya Hashimoto,Kentaro Gamo,Megumi Fukuta,Bin Zheng,Nobuyuki Zettsu,Ichiro Yamashita,Yukiharu Uraoka,Heiji Watanabe, Applied Physics Letters, Vol. 99, No. 26, 2011/12/26
  • Investigation of UV-induced electrical defects in thermally grown SiO2/SiC structures, D.Ikebuchi,T. Kirino,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, 2011/12
  • Bias temperatude instability in 4H-SiC metal-oxide-semiconductor devices, A. Chanthaphan,T. Kirino,Y. Uenishi,D. Ikeguchi,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, 2011/12
  • Drastic degradation in dielectric properties of TiN/HfSiO/SiO2 gate stacks due to Hf uptake property of TiN electrodes, T. Hosoi,H. Arimura,Y. Odake,N. Kitano,T. Shimura,H. Watanabe, Abstracts, 42nd IEEE Semiconductor Interface Specialists Conference, 2011/12
  • High-mobility Ge-on-insulator p-channel MOSFETs fabricated by lateral liquid-phase epitaxy, Y. Suzuki,S. Ogiwara,T. Hosoi,T. Shimura,H. Watanabe, Abstracts, 42nd IEEE Semiconductor Interface Specialists Conference, 2011/12
  • High-mobility Ge MOSFETs with GeON gate dielectrics formed by plasma nitridation of ultrathin GeO2, A. Kasuya,K. Kutsuki,I. Hideshima,Y. Minoura,T. Hosoi,T. Shimura,H. Watanabe, Program and Abstracts of 7th Handai Nanoscience and nanotechnology International Symposium, 2011/11
  • Characterization of Grain Boundaries and Lattice Strain in Multicrystalline Si for Solar Cells by Synchrotron White X-ray Micro-beam Diffraction Method, T. Matsumiya,N. Morimoto,S. Fujino,T. Hosoi,T. Shimura,K. Kajiwara,J. Chen,T. Sekiguchi,H. Watanabe, Program and Abstracts of 7th Handai Nanoscience and nanotechnology International Symposium, 2011/11
  • A protein removal technique with atmospheric-pressure He plasma for fabricating plasmonic device using porter-protein system, Yurie Fukunishi,Tatsuya Hashimoto,Zheng Bin,Megumi Fukuta,Nobuyuki Zettsu,Ichiro Yamashita,Yukiharu Uraoka,Heiji Watanabe, Program and Abstracts of 7th Handai Nanoscience and nanotechnology International Symposium, 2011/11
  • High-Quality Al2O3/GeO2 Gate Dielectrics Formed by Post-Deposition Oxidation of Ultrathin Metal Al Layer on Ge Substrates, Iori Hideshima,Atsushi Kasuya,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Abstracts of 15th International Conference on Thin Films (ICTF-15), 2011/11
  • Investigation of Mobile Ion Generation in Thermal Oxide of 4H-SiC(0001) MOS Devices with High-Temperature Hydrogen Annealing, Atthawut Chanthaphan,Takashi Kirino,Yusuke Uenishi,Daisuke Ikeguchi,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Abstracts of 15th International Conference on Thin Films (ICTF-15), 2011/11
  • Modulation of Conduction Band Offset at SiO2/4H-SiC Interface Depending on Interface Defect Passivation Treatment, T. Hosoi,T. Kitano,A. Chanthaphan,Y. Uenishi,D. Ikeguchi,A. Yoshigoe,Y. Teraoka,S. Mitani,Y. Nakano,T. Nakamura,T. Shimura,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Two-Dimensional Strain Measurement of Strained Silicon Wafer by Synchrotron X-ray Topography and its Electrical Characterization Using Back-Gate Transistors, T. Shimura,D. Shimokawa,T. Matsumiya,N. Morimoto,A. Ogura,T. Hosoi,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Effective Work Function Control of Metal Inserted Poly-Si Electroodes on HfSiO Dielectrics by In-situ Oxygen Treatment Process, N. Kitano,K. Chikaraishi,H. Arimura,T. Hosoi,T. Shimura,T. Nakagawa,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Unusual Impurity Absorbability of GeO2 in GeO2/Ge Stacks, S. Ogawa,T. Suda,T. Yamamoto,K. Kutsuki,I. Hideshima,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Drastic Degradation in Dielectric Properties of TiN/HfSiO/SiO2 Stacks due to Hf Uptake Property of TiN Electrodes, K. Chikaraishi,H. Arimura,Y. Odake,N. Kitano,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Al-based High-k/Ge Gate Stacks Fabricated by Post-Deposition Oxidation of Ultrathin Al Layer on Ge Substrates, I. Hideshima,A. Kasuya,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Investigation of UV-Induced Electrical Defects in Thermally Grown 4H-SiC MOS Devices, D. Ikeguchi,T. Kirino,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Flatband Voltage Instability Due to Mobile Ions in 4H-SiC Metal-Oxide-Semiconductor Devices, A. Chanthaphan,T. Kirino,Y. Uenishi,D. Ikeguchi,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • High-Quality Single-Crystalline Ge-on-Insulator P-Channel MOSFETs Formed by Lateral Liquid-Phase Epitaxy, T. Suzuki,S. Ogiwara,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Plasmonic Property of High-density Gold Nanoparticle Monolayer Arranged Using Ferritin Protein-base Encapsulation/transport System, T. Hashimoto,Z. Bin,M. Fukuta,N. Zettsu,K. Gamo,Y. Fukunishi,I.Yamashita,T. Uraoka,H. Watanabe, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Fabrication of High-quality GOI and SGOI Structures by Rapid Melt Growth Method, H. Watanabe,C. Yoshimoto,T. Hashimoto,S. Ogiwara,Y. Suzuki,T. Hosoi,T. Shimura, Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology, 2011/11
  • Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film, Hiroaki Arimura,Yuki Odake,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 99, No. 14, 2011/10/03
  • Insight into unusual impurity absorbability of GeO2 in GeO 2/Ge stacks, Shingo Ogawa,Taichi Suda,Takashi Yamamoto,Katsuhiro Kutsuki,Iori Hideshima,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 99, No. 14, 2011/10/03
  • Passivation of High-k Bulk and Interface Defects by Incorporating La into Hf-silicate and its Impact on Carrier Mobility [SISC] (Invited), M. Saeki,H. Arimura,N. Kitano,T. Hosoi,T. Shimura,H. Watanabe, IEEE 11th Kansai Colloquium, Electron Devices Workshop, 2011/10
  • Synchrotron radiation photoemission study of Ge3N4/Ge structures formed by plasma nitridation, Takuji Hosoi,Katsuhiro Kutsuki,Gaku Okamoto,Akitaka Yoshigoe,Yuden Teraoka,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 50, No. 10, 2011/10
  • Impact of thermally induced structural changes on the electrical properties of TiN/HfLaSiO gate stacks, Takashi Yamamoto,Shingo Ogawa,Hiroaki Arimura,Masayuki Saeki,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 50, No. 10, 2011/10
  • La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks, Masayuki Saeki,Hiroaki Arimura,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 50, No. 10, 2011/10
  • Ge p-MOSFET with GeON gate dielectrics formed by plasma nitridation of GeO2, A. Kasuya,K. Kutsuki,I. Hideshima,Y. Minoura,T. Hosoi,T. Shimura,H. Watanabe, Program and Abstracts of International Workshop on Quantum Nanostructures and Nanoelectronics (QNN2011), 2011/10
  • Nanoparticle-Induced Crystallization of Amorphous Ge Film Using Ferritin, Mutsunori Uenuma,Bin Zheng,Takanori Imazawa,Naofumi Okamoto,Masahiro Horita,Takashi Nishida,Yasuaki Ishikawa,Heiji Watanabe,Ichiro Yamashita,Yukiharu Uraoka, 2011 International Conference on Solid State Devices and Materials (SSDM 2011), 2011/09
  • Analysis of Grain Orientation and Lattice Strain in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-ray Micro-beam Diffraction Method, T. Shimura,T. Matsumiya,N. Morimoto,T. Hosoi,K. Kajiwara,J. Chen,T. Sekiguchi,H. Watanabe, Abstracts of 14the International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-XIV), 2011/09
  • 走査型容量顕微鏡による誘電体/伝導性薄膜観察, 内藤裕一,渡部平司, 「真空」, Vol. 54, No. 7, p. 437-444, 2011/09
  • Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices, Daisuke Ikeguchi,Takashi Kirino,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, 2011 International Conference on Silicon Carbide and Related Materials Abstract Book, 2011/09
  • Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties, Heiji Watanabe,Takuji Hosoi,Takashi Kirino,Yusuke Kagei,Yusuke Uenishi,Atthawut Chanthaphan,Akitaka Yoshigoe,Yuden Teraoka,Takayoshi Shimura, Applied Physics Letters, Vol. 99, No. 2, 2011/07/11
  • (依頼講演)SiC-MOS 界面欠陥の評価とその改善策, 渡部 平司, SiC 及び関連ワイドギャップ半導体研究会 第6回個別討論会 予稿冊子, 2011/07
  • 高温熱処理によるTiN/HfLaSiO/SiO2ゲートスタック中Hf及びLa原子のTiN電極中への拡散とMIPS構造による抑制, 大嶽祐輝,有村拓晃,佐伯雅之,力石薫介,北野尚武,細井卓治,志村考功,渡部平司, 電子情報通信学会 シリコン材料・デバイス(SDM)研究会誌, 2011/07
  • Selective assembly of close-packed gold nanoparticle arrays on substrate by ferritin protein-base encapsulation system and their plasmonic properties, Tatsuya Hashimoto,Megumi Fukuta,Kentaro Gamo,Nobuyuki Zettsu,Heiji Watanabe, Abstracts Vol.2 of the 5th International Conference on Surface Plasmon Photonics, 2011/05
  • Advantage of high-density plasma nitridation for improving thermal stability of ultrathin GeO2 on Ge(100), A. Kasuya,K. Kutsuki,I. Hideshima,T. Hosoi,T. Shimura,H. Watanabe, Technical Digest of 2011 International Meeting for Future of Electron Devices, Kansai, 2011/05
  • Correlation between surface morphology and breakdown characteristics of thermally grown SiO2 dielectrics in 4H-SiC MOS Devices, Y. Uenishi,K. Kozono,S. Mitani,Y. Nakanob,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Technical Digest of 2011 International Meeting for Future of Electron Devices, Kansai, 2011/05
  • Versatile protein-based bifunctional nano-systems (encapsulation and directed assembly): Selective nanoscale positioning of gold nanoparticle-viral protein hybrids, Bin Zheng,Nobuyuki Zettsu,Megumi Fukuta,Mutsunori Uenuma,Tatsuya Hashimoto,Kentaro Gamo,Yukiharu Uraoka,Ichiro Yamashita,Heiji Watanabe, Chemical Physics Letters, Vol. 506, No. 1-3, p. 76-80, 2011/04/11
  • Fundamental Aspects and Interface Engineering of Ge-MOS Devices, Heiji Watanabe,Katsuhiro Kutsuki,Iori Hideshima,Gaku Okamoto,Shoichiro Saito,Tomoya Ono,Takuji Hosoi,Takayoshi Shimura, 2011 MRS Spring Meeting Program and Exhibit Guide, 2011/04
  • (Invited) Understanding and Control of Metal-Oxide-Semiconductor Interfaces for Advanced Nanoelectronics, Heiji Watanabe,Takuji Hosoi,Takayoshi Shimura,Kenji Shiraishi,Keisaku Yamada, Abstracts of The 3rd Working Group Meeting of Asia Consortium on Computational Materials Science on "Advances in Nano Device Simulation" (accms WGM3), 2011/04
  • Maximized benefit of LaAlO higher-κ gate dielectrics by optimizing the La/Al atomic ratio, Hiroaki Arimura,Stephen L. Brown,Alessandro Callegari,Andrew Kellock,John Bruley,Matt Copel,Heiji Watanabe,Vijay Narayanan,Takashi Ando, IEEE Electron Device Letters, Vol. 32, No. 3, p. 288-290, 2011/03
  • Gate stack technologies for SiC power MOSFETs, H. Watanabe,T. Hosoi,T. Kirino,Y. Uenishi,A. Chanthaphan,D. Ikeguchi,A. Yoshigoe,Y. Teraoka,S. Mitani,Y. Nakano,T. Nakamura,T. Shimura, ECS Transactions, Vol. 41, No. 3, p. 77-90, 2011
  • Gate stack technologies for SiC power MOSFETs, H. Watanabe,T. Hosoi,T. Kirino,Y. Uenishi,A. Chanthaphan,D. Ikeguchi,A. Yoshigoe,Y. Teraoka,S. Mitani,Y. Nakano,T. Nakamura,T. Shimura, ECS Transactions, Vol. 41, No. 3, p. 77-90, 2011
  • Low-temperature crystallization of amorphous Ge thin films using metal nanoparticles, Kosuke Bundo,Takanori Imazawa,Mutsunori Uenuma,Yasuaki Ishikawa,Heiji Watanabe,Ichiro Yamashita,Yukiharu Uraoka, IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai, p. 116-117, 2011
  • High-quality single-crystal SiGe layers on insulator formed by rapid melt growth, S. Ogiwara,Y. Suzuki,C. Yoshimoto,T. Hosoi,T. Shimura,H. Watanabe, IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai, p. 70-71, 2011
  • Impact of stacked AlON/SiO2 gate dielectrics for SiC power devices, H. Watanabe,T. Kirino,Y. Uenishi,A. Chanthaphan,A. Yoshigoe,Y. Teraoka,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura, ECS Transactions, Vol. 35, No. 2, p. 265-274, 2011
  • Impact of stacked AlON/SiO2 gate dielectrics for SiC power devices, H. Watanabe,T. Kirino,Y. Uenishi,A. Chanthaphan,A. Yoshigoe,Y. Teraoka,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura, ECS Transactions, Vol. 35, No. 2, p. 265-274, 2011
  • Reduction of charge trapping sites in Al2O3/SiO 2 stacked gate dielectrics by incorporating nitrogen for highly reliable 4H-SiC MIS devices, Takuji Hosoi,Yusuke Kagei,Takashi Kirino,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Vol. 679-680, p. 496-499, 2011
  • Investigation of surface and interface morphology of thermally grown SiO2 dielectrics on 4H-SiC(0001) substrates, Takuji Hosoi,Kohei Kozono,Yusuke Uenishi,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Vol. 679-680, p. 342-345, 2011
  • Energy band structure of SiO2/4H-SiC interfaces and its modulation induced by intrinsic and extrinsic interface charge transfer, Heiji Watanabe,Takashi Kirino,Yusuke Kagei,James Harries,Akitaka Yoshigoe,Yuden Teraoka,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura, Materials Science Forum, Vol. 679-680, p. 386-389, 2011
  • Electrical characteristics of ge-based metal-insulator-semiconductor devices with Ge3N4 dielectrics formed by plasma nitridation, Gaku Okamoto,Katsuhiro Kutsuki,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, p. 2856-2860, 2011
  • Surface cleaning and etching of 4H-SiC(0001) using high-density atmospheric pressure hydrogen plasma, Heiji Watanabe,Hiromasa Ohmi,Hiroaki Kakiuchi,Takuji Hosoi,Takayoshi Shimura,Kiyoshi Yasutake, Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, p. 2802-2808, 2011
  • Electronic structure characterization of La incorporated Hf-based high-k gate dielectrics by NEXAFS, Takashi Yamamoto,Singo Ogawa,Masahiro Kunisu,Junichi Tsuji,Koji Kita,Masayuki Saeki,Yudai Oku,Hiroaki Arimura,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, p. 2823-2828, 2011
  • Improved electrical properties and thermal stability of GeON gate dielectrics formed by plasma nitridation of ultrathin oxides on Ge(100), Heiji Watanabe,Katsuhiro Kutsuki,Iori Hideshima,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura, Key Engineering Materials, Vol. 470, p. 152-157, 2011
  • The rule of Electric Surface State for the Specific Binding of the Ti-recognizing Recombinant Ferritin with Amphoteric Oxides and Silicon Oxide Surfaces, M. Fukuta,N. Zettsu,Y. Uraoka,H. Watanabe, Abstracts of Eleventh International Simposium on Biomimetic Materials Processing (BMMP-11), 2011/01
  • Fabrication of SGOI Structure with High Ge Concentration by Rapid Melt Growth, Shimpei Ogiwara,Yuichiro Suzuki,Chiaki Yoshimoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of the 16th Workshop on Gate Stack Technology and Physics, 2011/01
  • (Invited)Formation Kinetics of Oxygen Vacancy and Effective Work Function Modulation in High-k/metal Gate Stacks, Takuji Hosoi,Masayuki Saeki,Yudai Oku,Naomu Kitano,Hiroaki Arimura,Yuki Odake,Kenji Shiraishi,Keisaku Yamada,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of the 16th Workshop on Gate Stack Technology and Physics, 2011/01
  • In situ Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation, Takuji Hosoi,Katsuhiro Kutsuki,Gaku Okamoto,Akitaka Yoshigoe,Yuden Teraoka,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011), 2011/01
  • Thermal Stability of GeON Gate Dielectrics Fabricated by High-density Plasma Nitridation of Ultrathin Thermal GeO2 on Ge (100), Atsushi Kasuya,Katsuhiro Kutsuki,Iori Hideshima,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of the 16th Workshop on Gate Stack Technology and Physics, 2011/01
  • Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks, Takashi Yamamoto,Shingo Ogawa,Hiroaki Arimura,Masayuki Saeki,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011), 2011/01
  • La Induced Passivation of High-k Bulk and Interface Defects in Poly-Si/TiN/HfLaSiO/SiO2 Stacks, Masayuki Saeki,Hiroaki Arimura,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011), 2011/01
  • Thermal robustness and improved electrical properties of ultrathin germanium oxynitride gate dielectric, Katsuhiro Kutsuki,Iori Hideshima,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 50, No. 1, 2011/01
  • Characterization of sige layer during ge condensation process by X-ray diffraction methods, Takayoshi Shimura,Tomoyuki Inoue,Daisuke Shimokawa,Takuji Hosoi,Yasuhiko Imai,Osami Sakata,Shigeru Kimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 50, No. 1, 2011/01
  • Investigation of surface and interface morphology of thermally grown SiO2 dielectrics on 4H-SiC(0001) substrates, Takuji Hosoi,Kohei Kozono,Yusuke Uenishi,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Vol. 679-680, p. 342-345, 2011
  • Energy band structure of SiO2/4H-SiC interfaces and its modulation induced by intrinsic and extrinsic interface charge transfer, Heiji Watanabe,Takashi Kirino,Yusuke Kagei,James Harries,Akitaka Yoshigoe,Yuden Teraoka,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura, Materials Science Forum, Vol. 679-680, p. 386-389, 2011
  • Electronic structure characterization of La incorporated Hf-based high-k gate dielectrics by NEXAFS, Takashi Yamamoto,Singo Ogawa,Masahiro Kunisu,Junichi Tsuji,Koji Kita,Masayuki Saeki,Yudai Oku,Hiroaki Arimura,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Journal of Nanoscience and Nanotechnology, Vol. 11, No. 4, p. 2823-2828, 2011
  • (依頼講演)ゲルマニウムMOSデバイスにおける界面設計と高移動度FETへの応用, 渡部平司,朽木克博,糟谷篤志,秀島伊織,斉藤正一朗,小野倫也,細井卓治,志村考功, 応用物理学会 北海道支部講演会, 2010/12
  • (招待講演)極限CMOS実現に向けた高機能化ゲートスタックの設計, 渡部 平司, 東北大学 電気通信研究所 ナノ・スピン実験施設主催 シンポジウム「次世代集積デバイス・プロセスの展望」, 2010/12
  • Interfacial Design of High-k/Ge Gate Stacks with ZrO2 Dielectrics for Scaled Ge-based MOS devices, Takuji Hosoi,Gaku Okamoto,Iori Hideshima,Atsushi Kasuya,Katsuhiro Kutsuki,James Harries,Akitaka Yoshigoe,Yuden Teraoka,Takayoshi Shimura,Heiji Watanabe, Abstracts, 41st IEEE Semiconductor Interface Specialists Conference, 2010/12
  • Impact of Plasma Nitridation On Electrical properties and Thermal Stability of Ultrathin Thermal GeO2 on Ge(100), Katsuhiro Kutsuki,Atsushi Kasuya,Iori Hideshima,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Abstracts, 41st IEEE Semiconductor Interface Specialists Conference, 2010/12
  • Energy Band Structure of Thermally Grown SiO2/4H-SiC Interfaces and its Modulation Induced by Post-oxidation Treatments, Takashi Kirino,Yusuke Kagei,Akitaka Yoshigoe,Yuden Teraoka,Syuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Abstracts, 41st IEEE Semiconductor Interface Specialists Conference, 2010/12
  • Passivation of High-k Bulk and Interface Defects by Incorporating La into Hf-silicate and its Impact on Carrier Mobility, Masayuki Saeki,Hiroaki Arimura,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Abstracts, 41st IEEE Semiconductor Interface Specialists Conference, 2010/12
  • Kinetics of interfacial layer scavenging and dipole formation for ultimate scaling of Hf-based high-k gate dielectrics, Takashi Ando,Hiroaki Arimura,Richard Haight,Matt Copel,Heiji Watanabe,Vijay Nrayanan, Abstracts, 41st IEEE Semiconductor Interface Specialists Conference, 2010/12
  • Autonomous Liquid-phase Nanoscale Processing for the Large-area Fabrication of Nanoparticle-based Parallel Device Arrays, Nobuyuki Zettsu,Takuji Hosoi,Shin Matsuura,Akira Watanabe,Heiji Watanabe, Abstracts for the 2010 MRS Fall Meeting technical symposia, 2010/12
  • Ferritin Protein-base Versatile Encapsulation/Transport System for Selective Nanoscale Positioning of Targeted Plasmonic Au Nanoparticles, Tatsuya Hashimoto,Nobuyuki Zettsu,Bin Zheng,Megumi Fukuta,Kentaro Gamo,Ichiro Yamashita,Yukiharu Uraoka,Heiji Watanabe, Abstracts for the 2010 MRS Fall Meeting technical symposia, 2010/12
  • Impact of Nitrogen Incorporation into A12O3 Gate Dielectrics on Flatband Voltage Stability in 4H-SiC MIS Devices, T. Hosoi,Y. Kagei,T. Kirino,S. Mitani,Y. Nakano,T. Nakamura,T. Shimura,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Excellent Electrical Property of Ge-MIS Devices with ZrO2 High-k Gate Dielectrics, T. Hosoi,G. Okamoto,K. Kutsuki,J. Harries,A. Yoshigoe,Y. Teraoka,T. Shimura,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Residual Order and Rate Enhancement of SiGe Thermal Oxidation, T. Shimura,Y. Okamoto,D. Shimokawa,T. Inoue,T. Hosoi,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Investigation of Correlation between Thermally Grown SiO2 Thickness Fluctuation and Local Dielectric Breakdown in 4H-SiC MOS Devices, Y. Uenishi,K. Kozono,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Modulation on Thermally Grown SiO2/4H-SiC Energy Band Structure Depending on Surface Orientation, T. Kirino,Y. Kagei,A. Yoshigoe,Y. Teraoka,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Critical Titanium Coverage on SiO2 for Selective Adsorption of Ti-binding Ferritin, K. Gamo,M. Fukuta,T. Hashimoto,B. Zheng,N. Zettsu,I. Yamashita,Y. Uraoka,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Selective Transportaion of Gold Nanoparticles Encapsulated with TFG Subunit Dimers and Their Plasmonic Characteristics, T. Hashimoto,B. Zheng,M. Fukuta,K. Gamo,N. Zettsu,I. Yamashita,Y. Uraoka,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Fabricatrion of High-quality SiGe-on-insulator Structures by Rapid Melt Growth, S. Ogiwara,C. Yoshimoto,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Investigation of High-k Bulk and Interface Defects in Poly-Si/TiN/HfLaSiO/SiO2 Stacks using Charge Pumping Technique, M. Saeki,H. Arimura,N. Kitano,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Investigation of Structural Change in TiN/HfLaSiO Gate Stack Induced by High-temperature Annealing, T. Yamamoto,S. Ogawa,H. Arimura,M. Saeki,N. Kitano,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Impact of La and A1 Composition Ratio on the Electrical Properties of La-A1-O Higher-k Gate Dielectrics, H. Arimura,T. Ando,S. L. Brown,A. Kellock,A. Callegari,M. Copel,R. Haight,H. Watanabe,V. Narayanan, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, 2010/11
  • Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric, K. Kutuki,I. Hideshima,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology, Vol. 50, No. 1, 2010/11
  • Fabrication of Shape Controlled Metal Nanodot Arrays by Autonomous Liquid-phase Nanoscale Processing as well as Their Charge Injection Characteritics for Floating Nanodot Gate Memory, N. Zettsu,S. Matsuura,A. Watanabe,K. Yamamura,T. Hosoi,H. Watanabe, Extended Abstracts of Third International Symposium on Atomically Controlled Fabrication Technology, 4.4, 42-43., 2010/11
  • (招待講演)金属電極/高誘電率絶縁膜界面の物理を中心としたHigh-k/Metalゲートスタックの実効仕事関数変調機構の理解, 細井卓治,佐伯雅之,喜多祐起,奥雄大,有村拓晃,北野尚武,白石賢二,山田啓作,志村考功,渡部平司, 信学技報 2010年11月., 2010/11
  • Cross-sectional TEM study on SiO2/4H-SiC (0001) structure and its impact on reliability degradation of SiC MOS devices, 2010/10
  • Effect of SiO2/4H-SiC interface passivation on energy band alignment between SiO2 and 4H-SiC, 2010/10
  • Control of Gate Metal Effective Work Functions and Interface Layer Thickness by Designing Interface Thermodynamics Based on Heteroatom Incorporation into High-k HfO2 Gate Dielectrics, Kenji Shiraishi,Takuji Hosoi,Heiji Watanabe,Keisaku Yamada, ECS Trans, 2010/10
  • Fabrication of fully relaxed SiGe layers with high Ge concentration on silicon-on-insulator wafers by rapid melt growth, Takayoshi Shimura,Shimpei Ogiwara,Chiaki Yoshimoto,Takuji Hosoi,Heiji Watanabe, Applied Physics Express, Vol. 3, No. 10, 2010/10
  • Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices diodes, Takuji Hosoi,Yusuke Kagei,Takashi Kirino,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Abstract Booklet of the 8th European Conference on Silicon Carbide and Related Materials, 2010/08
  • ゲートファーストHigh-k MIPS構造の実効仕事関数制御に向けた指針, 細井卓治,佐伯雅之,奥雄大,有村拓晃,北野尚武,白石賢二,山田啓作,志村考功,渡部平司, 応用物理学会シリコンテクノロジー分科会第127回研究集会予稿集, 2010/07
  • (Invited) Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method, Heiji Watanabe,Chiaki Yoshimoto,Tatsuya Hashimoto,Shimpei Ogiwara,Takuji Hosoi,Takayoshi Shimura, The Proceedings of AM-FPD 10, 2010/07
  • Interface Engineering of ZrO2/Ge Gate Stacks by Post-deposition Annealing and Al2O3 Capping Layers, H. Watanabe,G. Okamoto,K. Kutsuki,J. Harries,A. Yoshigoe,Y. Teraoka,T. Hosoi,T. Shimura, Extended Abstracts of International Symposium on Technology Evolution for Silicon Nano-Electronics, 2010/06
  • Superior electrical properties and thermal stability of ultrathin GeON dielectrics formed by plasma nitridation of thermal oxides on Ge(100), K. Kutsuki,I. Hideshima,G. Okamoto,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of International Symposium on Technology Evolution for Silicon Nano-Electronics, 2010/06
  • Synchrotron X-ray Diffraction Study of Lattice Inclination and Strain in Strained Si Wafers, D. Shimokawa,T. Inoue,A. Ogura,M. Umeno,T. Hosoi,T. Shimura,H. Watanabe, Abstract Notebook of International Conference on Core Research and Engineering Science of Advanced Materials, 2010/06
  • Conductive AFM study on local dielectric degradation of thermal oxides in 4H-SiC MOS devices, Y. Uenishi,K. Kozono,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Abstract Notebook of International Conference on Core Research and Engineering Science of Advanced Materials, 2010/06
  • Control of Thermally Grown GeO2/Ge MOS Characteristics - Effects of Vanuum Annealing, Capping Layers and Electrode Material -, I. Hideshima,K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura,H. Watanabe, Abstract Notebook of International Conference on Core Research and Engineering Science of Advanced Materials, 2010/06
  • 次世代の高機能化 High-k 絶縁膜への研究開発の動き, 渡部平司, 月刊 MATERIAL STAGE, 2010/05
  • (Invited) Ultimate EOT Scaling (< 5A) Using Hf-Based High-k Gate Dielectrics and Impact on Carrier Mobility, Takashi Ando,Martin M. Frank,Kisik Choi,Changhwan Choi,Richard Haight,Matt Copel,Hiroaki Arimura,Heiji Watanabe,Vijay Narayanan, Abstracts of 217th ECS Meeting - Vancouver, Canada, 2010/04
  • Investigation of the Physical Origin of the Improved Electrical Properties of GeO2 Dielectric by Vacuum Annealing., Shingo Ogawa,Takashi Yamamoto,Gaku Okamoto,Katsuhiro Kutsuki,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Program and Exhibit Guide of 2010 MRS spring meeting, 2010/04
  • Oxidation Mechanism at Ge/GeO2 interfaces: An ab initio Study., Shoichiro Saito,Takuji Hosoi,Heiji Watanabe,Tomoya Ono, Program and Exhibit Guide of 2010 MRS spring meeting, 2010/04
  • Optimization of Composition Ratio in La-Al-O Gate Dielectrics for Advanced Metal/Higher-k Devices., Hiroaki Arimura,Takashi Ando,Stephen L. Brown,Andrew Kellock,Alessandro Callegari,Matthew Copel,Richard Haight,Heiji Watanabe,Vijay Narayanan, Program and Exhibit Guide of 2010 MRS spring meeting, 2010/04
  • Comprehensive study and control of oxygen vacancy induced effective work function modulation in gate-first high-k/metal inserted poly-Si stacks, T. Hosoi,M. Saeki,Y. Oku,H. Arimura,N. Kitano,K. Shiraishi,K. Yamada,T. Shimura,H. Watanabe, Digest of Technical Papers - Symposium on VLSI Technology, p. 179-180, 2010
  • High-quality GeON gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100), Heiji Watanabe,Katsuhiro Kutsuki,Iori Hideshima,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, p. 867-870, 2010
  • High-quality GeON gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100), Heiji Watanabe,Katsuhiro Kutsuki,Iori Hideshima,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, p. 867-870, 2010
  • Control of gate metal effective work functions and interface layer thickness by designing interface thermodynamics based on heteroatom incorporation into high-k HfO2 gate dielectrics, K. Shiraishi,T. Hosoi,H. Watanabe,K. Yamada, ECS Transactions, Vol. 33, No. 6, p. 479-486, 2010
  • Interface reaction and rate enhancement of SiGe thermal oxidation, T. Shimura,Y. Okamoto,D. Shimokawa,T. Inoue,T. Hosoi,H. Watanabe, ECS Transactions, Vol. 33, No. 6, p. 893-899, 2010
  • Interface reaction and rate enhancement of SiGe thermal oxidation, T. Shimura,Y. Okamoto,D. Shimokawa,T. Inoue,T. Hosoi,H. Watanabe, ECS Transactions, Vol. 33, No. 6, p. 893-899, 2010
  • Thermal stability and electron irradiation damage of ordered structure in the thermal oxide layer on Si, Takayoshi Shimura,Daisuke Shimokawa,Tomoyuki Inoue,Takuji Hosoi,Heiji Watanabe,Osami Sakata,Masataka Umeno, Journal of the Electrochemical Society, Vol. 157, No. 10, p. H977-H981, 2010
  • Comprehensive study and control of oxygen vacancy induced effective work function modulation in gate-first high-k/metal inserted poly-Si stacks, T. Hosoi,M. Saeki,Y. Oku,H. Arimura,N. Kitano,K. Shiraishi,K. Yamada,T. Shimura,H. Watanabe, Digest of Technical Papers - Symposium on VLSI Technology, p. 179-180, 2010
  • Ultimate EOT scaling (&lt; 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility, Takashi Ando,Martin M. Frank,Kisik Choi,Changhwan Choi,John Bruley,Marinus Hopstaken,Richard Haight,Matt Copel,Hiroaki Arimura,Heiji Watanabe,Vijay Narayanan, ECS Transactions, Vol. 28, No. 1, p. 115-123, 2010
  • Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high- k stacks, Hiroaki Arimura,Yudai Oku,Masayuki Saeki,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Journal of Applied Physics, Vol. 107, No. 3, 2010
  • Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles, Takashi Ando,Matt Copel,John Bruley,Martin M. Frank,Heiji Watanabe,Vijay Narayanan, Applied Physics Letters, Vol. 96, No. 13, 2010
  • Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy, Hiroaki Arimura,Richard Haight,Stephen L. Brown,Andrew Kellock,Alessandro Callegari,Matthew Copel,Heiji Watanabe,Vijay Narayanan,Takashi Ando, Applied Physics Letters, Vol. 96, No. 13, 2010
  • Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high- k stacks, Hiroaki Arimura,Yudai Oku,Masayuki Saeki,Naomu Kitano,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Journal of Applied Physics, Vol. 107, No. 3, 2010
  • Residual order in the thermal oxide of a fully strained SiGe alloy on Si, Takayoshi Shimura,Yuki Okamoto,Tomoyuki Inoue,Takuji Hosoi,Heiji Watanabe, Phys. Rev. B, 2010/01
  • Improved electrical properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided 4H-SiC(0001) surfaces, Yusuke Kagei,Takashi Kirino,Yuu Watanabe,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 645-648, p. 507-511, 2010
  • Improvement of the Electrical Properties of Ge-MOS Capacitors Degraded by Air Exposure, Iori Hideshima,Gaku Okamoto,Katsuhiro Kutsuki,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics, 2010/01
  • First-principles Study on Defect Formation at Ge/GeO2 Interface, Tomoya Ono,Shoichiro Saito,Takuji Hosoi,Heiji Watanabe, Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics, 2010/01
  • Interface Engineering of Ge MOS Devices with ZrO2 Gate Dielectrics, Takuji Hosoi,Gaku Okamoto,Katsuhiro Kutsuki,Yusuke Kagei,James Harries,Akitaka Yoshigoe,Yuden Teraoka,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics, 2010/01
  • Systematic Investigation of Carbon Impurity Induced Electrical Degradation of TiN/HfSiON Gate Stacks, Masayuki Saeki,Hiroaki Arimura,Yudai Oku,Naomu Kitano,Motomu Kosuda,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics, 2010/01
  • Characterization of GeON Dielectrics Fabricated by High-Density Plasma Nitridation of Ultrathin Thermal GeO2, Katsuhiro Kutsuki,Iori Hideshima,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics, 2010/01
  • Low threshold voltage and high mobility N-channel metal-oxide-semiconductor field-effect transistor using Hf-Si/HfO2 gate stack fabricated by gate-last process, Takashi Ando,Tomoyuki Hirano,Kaori Tai,Shinpei Yamaguchi,Shinichi Yoshida,Hayato Iwamoto,Shingo Kadomura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 49, No. 1, 2010
  • Improved electrical properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided 4H-SiC(0001) surfaces, Yusuke Kagei,Takashi Kirino,Yuu Watanabe,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 645-648, p. 507-511, 2010
  • Direct observation of dielectric breakdown spot in thermal oxides on 4H-SiC(0001) using conductive atomic force microscopy, Kohei Kozono,Takuji Hosoi,Yusuke Kagei,Takashi Kirino,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 645-648, p. 821-824, 2010
  • Improved characteristics of 4H-SiC MISFET with AlON/nitrided SiO 2 stacked gate dielectrics, Takuji Hosoi,Yusuke Kagei,Takashi Kirino,Yuu Watanabe,Kohei Kozono,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 645-648, p. 991-994, 2010
  • Direct observation of dielectric breakdown spot in thermal oxides on 4H-SiC(0001) using conductive atomic force microscopy, Kohei Kozono,Takuji Hosoi,Yusuke Kagei,Takashi Kirino,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 645-648, p. 821-824, 2010
  • Improved electrical properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided 4H-SiC(0001) surfaces, Yusuke Kagei,Takashi Kirino,Yuu Watanabe,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 645-648, p. 507-511, 2010
  • Improved characteristics of 4H-SiC MISFET with AlON/nitrided SiO 2 stacked gate dielectrics, Takuji Hosoi,Yusuke Kagei,Takashi Kirino,Yuu Watanabe,Kohei Kozono,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Heiji Watanabe, Materials Science Forum, Trans Tech Publications Ltd, Vol. 645-648, p. 991-994, 2010
  • Impact of plasma nitridation of 4H-SiC surfaces and high-temperature hydrogenannealing on interface properties of thermally grown SiC-MOS devices, Y. Kagei,T. Kirino,K. Kozono,S. Mitani,Y. Nakano,T. Nakamura,A. Yoshigoe,Y. Teraoka,T. Hosoi,T. Shimura,H. Watanabe, 2009/12
  • Observation of the Local Dielectric Degradation Phenomenon in Thermal Oxides on4H-SiC(0001) Using Conductive Atomic Force Microscopy, K. Kozono,Y. Kagei,T. Kirino,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, 2009/12
  • SR-XPS study on energy band structure of thermally grown SiO2/4H-SiC interface, T. Kirino,Y. Kagei,G. Okamoto,J. Harries,A. Yoshigoe,Y. Teraoka,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, 2009/12
  • Improvement of SiC-MOS Devices with Plasma Nitridation and AlON/SiO2 Stacked Dielectrics, H. Watanabe,Y. Kagei,K. Kozono,T. Kirino,Y. Watanabe,S. Mitani,Y. Nakano,T. Nakamura,A. Yoshigoe,Y. Teraoka,T. Hosoi,T. Shimura, 2009/12
  • Development of Silane-coupling Silicon Substrate for Device Fabrication using Protein, Megumi Fukuta,Heiji Watanabe,Ichiro Yamashita, Program and Exhibit Guide of 2009 MRS fall meeting, 2009/12
  • Effective Work Function Control of TaC/High-k Gate Stack by Post Metal Nitridation, Takashi Ando,Allesandro Callegari,Changhwan Choi,Marinus Hopstaken,John Bruley,Michael Gordon,Heiji Watanabe,Vijay Narayanan, Abstracts, 40th IEEE Semiconductor Interface Specialists Conference, 2009/12
  • New Insights into Flatband Voltage Shift and Minority Carrier Generation in GeO2/Ge MOS devices, Takuji Hosoi,Marina Saito,Iori Hideshima,Gaku Okamoto,Katsuhiro Kutsuki,Shingo Ogawa,Takashi Yamamoto,Takayoshi Shimura,Heiji Watanabe, Abstracts, 40th IEEE Semiconductor Interface Specialists Conference, 2009/12
  • Impact of Plasma Nitridation on Physical and Electrical Properties of Ultrathin Thermal Oxides on Ge(100)., Katsuhiro Kutsuki,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Program and Exhibit Guide of 2009 MRS fall meeting, 2009/12
  • Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy, Tatsuya Hashimoto,Chiaki Yoshimoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Program and Exhibit Guide of 2009 MRS fall meeting, 2009/12
  • Band-edge high-performance metal-gate/high-κ nMOSFET using Hf-Si/HfO 2 stack, Takashi Ando,Tomoyuki Hirano,Kaori Tai,Shinpei Yamaguchi,Shinichi Yoshida,Hayato Iwamoto,Shingo Kadomura,Heiji Watanabe, IEEE Transactions on Electron Devices, Vol. 56, No. 12, p. 3223-3227, 2009/12
  • First-Principles Study on Oxidation Mechanism at Ge/GeO2 Interface, S. Saito,T. Hosoi,H. Watanabe,T. Ono, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • Electrical Characteristics of Ge-based MIS Devices with Ge3N4 Dielectrics Formed by Plasma, G. Okamoto,K. Kutsuki,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • Impact of gate electrode deposition process on effective work function of poly-Si/TiNHfSiO gate stacks, Y. Oku,H. Arimura,M. Saeki,N. Kitano,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • Structural and electrical properties of GeON dielectrics formed by high-density plasma nitridation of ultrathin thermal GeO2, K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • Observation of local dielectric degradation of thermal oxides on 4H-SiC using conductive AFM, K. Kozono,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • Impact of Carbon Impurity on Electrical Properties of TiN/HfSiON/SiO2, M. Saeki,H. Arimura,Y. Oku,N. Kitano,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • Thermal Instability of Effective Work Function of Metal/HfLaSiO Gate Stacks, H. Arimura,Y. Oku,M. Saeki,N. Kitano,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • Selective Adsorption of Ti-binding Ferritin on Thin Ti Film with Various Oxidation Treatment, T. Hashimoto,K. Gamo,M. Fukuta,B. Zheng,N. Okamoto,I. Yamashita,Y. Uraoka,N. Zettsu,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • Non-volatile Memory Applications in a 12 nm-sized Au Nanoparticle Array Fabricated by Preciously Controlled Colloidal Self-Assembly, S. Saito,T. Hosoi,H. Watanabe,N. Zettu, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • Advanced Gate Stack Technology for SiC-MOS Power Devices, H. Watanabe,Y. Kagei,K. Kozono,T. Kirino,Y. Watanabe,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura, Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology, 2009/11
  • First-Principles Calculation of Oxidation Mechanism at Ge/GeO2 Interfaces, Shouichiro Saito,Takuji Hosoi,Heiji Watanabe,Tomoya Ono, The 12th Asian Workshop on First-Principles Electronic Structure Calculations, 2009/10
  • Observation of Two-Dimensional Distribution of Lattoce Inclination and Strain in Strained Si Wafers by Synchrotron X-Ray Topography, Takayoshi Shimura,Tomoyuki Inoue,Daisuke Shimokawa,Takuji Hosoi,Heiji Watanabe,Atsushi Ogura,Masataka Umeno, DRIP XIII Conference, 2009/09
  • Significant Improvement in GeO2/Ge MOS Characteristics by in Situ Vacuum Annealing, T. Hosoi,G. Okamoto,K. Kutsuki,T. Shimura,H. Watanabe, Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium, 2009/09
  • Experimental Verification of Interface Dipole Formation in Metal/high-k Gate Stacks, T. Hosoi,Y. Kita,T. Shimura,K. Shiraishi,Y. Nara,K. Yamada,H. Watanabe, Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium, 2009/09
  • Improved Electrical Properties and Effective Work Function Control of Metal/HfLaSiO/SiO2/Si Gate Stacks Fabricated by PVD-Based In-situ Process, M. Saeki,H. Arimura,Y. Oku,N. Kitano,T. Hosoi,T. Shimura,H. Watanabe, Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium, 2009/09
  • Ge3N4 Gate Dielectrics Fabricated by High-Density Plasma Nitridation of Ge(100) Surfaces, K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura,H. Watanabe, Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium, 2009/09
  • Improved Physical and Electrical Properties of Ultrathin Germanium Oxides by High-Density Plasma Nitridation, K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura,H. Watanabe, Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium, 2009/09
  • Fabrication of Ge Nano-Wires on Insulators Using Lateral Liquid-Phase Epitaxy, C. Yoshimoto,T. Hashimoto,T. Hosoi,T. Shimura,H. Watanabe, Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium, 2009/09
  • Fundamental Study on GeO2/Ge Interface and its Electrical Properties, Heiji WATANABE,Marina SAITO,Shoichiro SAITO,Gaku OKAMOTO,Katsuhiro KUTSUKI,Takuji HOSOI,Tomoya ONO,Takayoshi SHIMURA, Abstracts, IEICE Technical Committee on Silicon Device and Materials (SDM), 2009/06
  • Mechanism of carrier mobility degradation induced by crystallization of HfO2 gate dielectrics, Takashi Ando,Tomoyuki Hirano,Shinichi Yoshida,Kaori Tai,Shinpei Yamaguchi,Satoshi Toyoda,Hiroshi Kumihashira,Takayoshi Shimura,Hayato Iwamoto,Masaharu Oshima,Shingo Kadomura,Heiji Watanabe, Appl. Phys. Express, Vol. 2, No. 7, 2009/06
  • Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy: Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth, Tatsuya Hashimoto,Chiaki Yoshimoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Appl. Phys. Express, Vol. 2, No. 6, 2009/05
  • Nitrogen Plasma Cleaning of Ge(100) Surfaces, Katsuhiro Kutsuki,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Surface Science, 2009/03
  • Systematic study on work-function-shift in metal/Hf-based high-k gate stacks, Yuki Kita,Shinichi Yoshida,Takuji Hosoi,Takayoshi Shimura,Kenji Shiraishi,Yasuo Nara,Keisaku Yamada,Heiji Watanabe, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 94, No. 12, 2009/03
  • Investigation of Flatband Voltage Instability in Metal/High-k Gate Stacks, Takuji Hosoi,Yuki Kita,Takayoshi Shimura,Heiji Watanabe,Kenji Shiraishi,Yasuo Nara,Keisaku Yamada, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • Synchrotron X-ray Diffraction Studies of Thermal Oxide of Strained SiGe on Si, Daisuke Shimokawa,Yuki Okamoto,Tomoyuki Inoue,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • Lateral Liquid-Phase Epitaxy of Single-Crystal Germanium Wires on La2O3 Dielectrics, T. Hashimoto,C. Yoshimoto,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • 4H-SiC MIS Devices with AION/SiO2/SiC Gate Structures, Y. Kagei,M. Harada,Y. Watanabe,T. Hosoi,T. Shimura,S. Mitani,Y. Nakano,T. Nakamura,H. Watanabe, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • Synchrotron Microbeam X-ray Diffraction Analysis of Strain Relaxation Process during Ge Condensation, Tomoyuku Inoue,Daisuke Shimokawa,Takuji Hosoi,Takayoshi Shimura,Yasuhiko Imai,Osami Sakata,Shigeru Kimura,Heiji Watanabe, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • Excellent Electrical Property and Flatband Voltage Controllability of HfLaSiO High-k Gate Dielectrics Fabricated by In-situ Process, H. Arimura,Y. Oku,N. Kitano,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • Advantages of Fluorine Ion Implantation for Improving Ge3N4/Ge Interfaces, Katsuhiro Kutsuki,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • Non-volatile Au Nanoparticle Memory Applications Enabled by Preciously Controlled Colloidal Self-Assembly, S. Uchida,S. Saitoh,T. Hosoi,H. Watanabe,N. Zettsu, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • Fabrication of Advanced Metal/High-k Gate Stacks by Atomically Controlled in-situ PVD-based Method, H. Watanabe,H. Arimura,N. Kitano,Y. Oku,M. Saeki,Y. Naitou,N. Yamaguchi,M. Kosuda,T. Hosoi,T. Shimura, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • Ge-MIS Devices with Ge3N4 Gate Dielectrics Fabricated by High-Density Plasma Nitridation, Takuji Hosoi,Katsuhiro Kutsuki,Gaku Okamoto,Marina Saito,Takayoshi Shimura,Heiji Watanabe, Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-, 2009/02
  • Impact of a treatment combining nitrogen plasma exposure and forming gas annealing on defect passivation of SiO2/SiC interfaces, Heiji Watanabe,Yuu Watanabe,Makoto Harada,Yusuke Kagei,Takashi Kirino,Takuji Hosoi,Takayoshi Shimura,Shuhei Mitani,Yuki Nakano,Takashi Nakamura, Materials Science Forum, Vol. 615, p. 525-528, 2009
  • Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100), Katsuhiro Kutsuki,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 95, No. 2, 2009
  • First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces, Shoichiro Saito,Takuji Hosoi,Heiji Watanabe,Tomoya Ono, Applied Physics Letters, Vol. 95, No. 1, 2009
  • Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices, Takuji Hosoi,Katsuhiro Kutsuki,Gaku Okamoto,Marina Saito,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 94, No. 20, 2009
  • Synchrotron X-ray diffraction studies of thermal oxidation of Si and SiGe, T. Shimura,Y. Okamoto,D. Shimokawa,T. Inoue,T. Hosoi,H. Watanabe,O. Sakata,M. Umeno, ECS Transactions, Vol. 19, No. 2, p. 479-493, 2009
  • Synchrotron X-ray diffraction studies of thermal oxidation of Si and SiGe, T. Shimura,Y. Okamoto,D. Shimokawa,T. Inoue,T. Hosoi,H. Watanabe,O. Sakata,M. Umeno, ECS Transactions, Vol. 19, No. 2, p. 479-493, 2009
  • AlON/SiO2 stacked gate dielectrics for 4H-SiC MIS devices, Takuji Hosoi,Makoto Harada,Yusuke Kagei,Yuu Watanabe,Takayoshi Shimura,Shuhei Mitani,Yuki Nakano,Takashi Nakamura,Heiji Watanabe, Materials Science Forum, Vol. 615, p. 541-544, 2009
  • Impact of a treatment combining nitrogen plasma exposure and forming gas annealing on defect passivation of SiO2/SiC interfaces, Heiji Watanabe,Yuu Watanabe,Makoto Harada,Yusuke Kagei,Takashi Kirino,Takuji Hosoi,Takayoshi Shimura,Shuhei Mitani,Yuki Nakano,Takashi Nakamura, Materials Science Forum, Vol. 615, p. 525-528, 2009
  • Study on Electrical Properties of Ge3N4 Dielectrics Fabricated by High-Density Plasma Nitridation, K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics, 2009/01
  • Fabrication and Electrical Characterization of High-k/Ge Gate Stacks with Al-Oxynitride Dielectrics, G. Okamoto,K. Kutsuki,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics, 2009/01
  • Residual Order in the Thermally Oxidized Thin Film of Strained SiGe Layers Grown on Si Substrates, D. Shimokawa,Y. Okamoto,T. Inoue,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics, 2009/01
  • Fabrication of Ge Wire on Insulator Using Lateral Liquid-Phase Epitaxial Growth, T. Hashimoto,C. Yoshimoto,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics, 2009/01
  • Improved Electrical Properties and Flatband Control of HfLaSiO High-k Gate Dielectrics Fabricated by In-Situ Process, H. Arimura,Y. Oku,M. Saeki,N. Kitano,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics, 2009/01
  • Impact of a treatment combining nitrogen plasma exposure and forming gas annealing on defect passivation of SiO2/SiC interfaces, Heiji Watanabe,Yuu Watanabe,Makoto Harada,Yusuke Kagei,Takashi Kirino,Takuji Hosoi,Takayoshi Shimura,Shuhei Mitani,Yuki Nakano,Takashi Nakamura, Materials Science Forum, Vol. 615, p. 525-528, 2009
  • 走査型容量顕微鏡による高誘電率金属酸化物(high-k)薄膜中の電荷トラップサイトの観察, 内藤裕一,安藤淳,小木曽久人,神山聡,奈良安雄,安武潔,渡部平司, 顕微鏡, 2008/12
  • Formation of Advanced HfLaSiO/SiO2 Gate Dielectrics Utilizing PVD-based in-situ Fabrication Method, T. Hosoi,Y. Oku,H. Arimura,M. Saeki,N. Kitano,T. Shimura,H. Watanabe, Abstracts, 39th IEEE Semiconductor Interface Specialists Conference, 2008/12
  • Improved Electrical Properties of Ge3N4/Ge Interfaces by Fluorine Ion Implantation, K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura,H. Watanabe, Abstracts, 39th IEEE Semiconductor Interface Specialists Conference, 2008/12
  • Fabrication and Characterization of 4H-SiC MIS Devices with AION/SiO2 Stacked Gate Dielectrics, T. Hosoi,Y. Kagei,M. Harada,Y. Watanabe,T. Shimura,S. Mitani,Y. Nakano,T. Nakamura,H. Watanabe, 2008/12
  • Passivation of SiO2/SiC interface defect by the combination treatment with nitrogen plasma irradiation and forming gas anneal, Y. Watanabe,Y. Kagei,T. Kirino,S. Mitani,Y. Nakano,T. Nakamura,T. Hosoi,T. Shimura,H. Watanabe, 2008/12
  • Improvement of thermally grown SiO2/SiC interfaces by using plasma nitrided 4H-SiC, Y. Kagei,Y. Watanabe,M. Harada,T. Hosoi,T. Shimura,H. Watanabe, 2008/12
  • Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks, H. Watanabe,Y. Kita,T. Hosoi,T. Shimura,K. Shiraishi,Y. Nara,K. Yamada, IEICE Technical Report, 2008/12
  • Investigation of Structural Defects in Strained Si Wafers by Synchrotron X-ray Topography, Takayoshi Shimura,Tomoyuki Inoue,Takuji Hosoi,Atsushi Ogura,Satoshi Iida,Masataka Umeno,Heiji Watanabe, Abstracts of the 5th International Symposium on Advanced Science and Technology of Silicon Materials, 2008/11
  • Electrical Properties of Ge3N4/Ge Gate Stacks Fabricated Using High-Density Plasma Nitridation, G. Okamoto,K. Kutsuki,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices Science and Technology, 2008/11
  • Residual Order in Thermal Oxide of Fully Strained SiGe Alloy on Si, T. Shimura,Y. Okamoto,T. Inoue,T. Hosoi,H. Watanabe, Extended Abstracts of 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices Science and Technology, 2008/11
  • Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure, Tetsuya Ikuta,Shigeru Fujita,Hayato Iwamoto,Shingo Kadomura,Takayoshi Shimura,Heiji Watanabe,Kiyoshi Yasutake, Journal of Crystal Growth, Vol. 310, No. 21, p. 4507-4510, 2008/10/15
  • 真空一貫界面固相反応法による高品質Metal/High-kゲートスタック作製技術, 渡部 平司, 第49回真空に関する連合講演会講演予稿集, 2008/10
  • 真空一貫原子制御PVDプロセスによるTiO2/HfSiO/SiO2積層構造 High-k絶縁膜の作製と電気特性評価, 渡部平司,有村拓晃,奥 雄大,細井卓治,志村考功,北野尚武,内藤裕一,山口述夫,小須田求, 電気学会研究会資料-電子材料研究会EFM-08-24~34, 2008/09
  • Fabrication of Advanced TiO2/HfSiO/SiO2 Layered Higher-k Dielectrics by Atomically Controlled In-situ PVD-Based Method, H. Wanatabe,H. Arimura,N. Kitano,Y. Naitou,Y. Oku,N. Yamaguchi,M. Kosuda,T. Hosoi,T. Shimura, Abstracts of Fourth International WorkShop on New Group Ⅳ Semiconductor Nanoelectronics, 2008/09
  • Characterization of Strain Relaxation Process during Ge Condensation by Synchrotron Microbeam X-ray Diffraction, T. Inoue,D. Shimokawa,T. Hosoi,T. Shimura,Y. Imai,O. Sakata,S. Kimura,H. Wanatabe, Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS, 2008/09
  • AlON/SiO2 Stacked Gate Dielectrics for 4H-SiC MIS Devices, T. Hosoi,M. Harada,Y. Kagei,Y. Watanabe,T. Shimura,S. Mitani,Y. Nakano,T. Nakamura,H. Watanabe, Abstract of 7th European Conference on Silicon Carbide and Related Materials, Barcelona,Spain, September 7-11, 2008, 2008/09
  • Mechanism of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks, H. Watanabe,Y. Kita,T. Hosoi,T. Shimura,K. Shiraishi,Y. Nara,K. Yamada, PROCEEDINGS OF THE 72ND SYMPOSIUM ON SEMICONDUCTORS AND INTEGRATED CIRCUITS TECHNOLOGY, 2008/07
  • Origins of interface dipoles at p-metal/Hf-based high-k gate stacks, H. Watanabe,T. Hosoi,K. Kita,T. Shimura,K. Shiraishi,Y. Nara,K. Yamada, Abstracts of International Conference on Quantum Simulators and Design 2008, 2008/06
  • Improvement of thermally grown SiO2/SiC interfaces by plasma nitridation and post-metalization annealing, Y. Kagei,Y. Watanabe,M. Harada,T. Hosoi,T. Shimura,H. Watanabe, Abstracts of International Meeting for Future of Electron Devices, Kansai 2008, 2008/05
  • Formation of Polycrystalline-Si Thin Films Using Nanocrystalline Ge Nuclei, Chiaki Yoshimoto,Hiromasa Ohmi,Takayoshi Shimura,Hiroaki Kakiuchi,Heiji Watanabe,Kiyoshi Yasutake, Abstracts of International Meeting for Future of Electron Devices, Kansai 2008, 2008/05
  • Fabrication of Local Ge-on-Insulator Structures using Liquid Phase Selective Lateral Epitaxy, T. Hashimoto,C. Yoshimoto,T. Hosoi,T. Shimura,H. Watanabe, Abstracts of International Meeting for Future of Electron Devices, Kansai 2008, 2008/05
  • Fabrication of High-k/Ge Gate Stacks with Al-oxynitride Dielectric Films, G. Okamoto,K. Kutsuki,M. Harada,T. Hosoi,T. Shimura,H. Watanabe, Abstracts of International Meeting for Future of Electron Devices, Kansai 2008, 2008/05
  • Investigation of in-situ boron-doped Si selective epitaxial growth by comparison with arsenic doping, Tetsuya Ikuta,Shigeru Fujita,Hayato Iwamoto,Shingo Kadomura,Takayoshi Shimura,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Vol. 47, No. 4, p. 2452-2455, 2008/04/25
  • Characteristics of pure Ge3N4 dielectric layers formed by high-density plasma nitridation, Katsuhiro Kutsuki,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Japanese Journal of Applied Physics, Vol. 47, No. 4, p. 2415-2419, 2008/04/25
  • Landscape of Materials Design for Future Nano Electronics and Combinatorial materials Exploration, T.Chikyow,T. Nagata,N. Umezawa,M. Yoshitake,K. Ohmori,T. Yamada,H. Watanabe,K. Shiraishi,H. Koinuma, Proceedings of Technical Papaers of International Symposium on VLSI-TSA (Technology, Systems, and Applications), 2008/04
  • Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei, C. Yoshimoto,H. Ohmi,T. Shimura,H. Kakiuchi,H. Watanabe,K. Yasutake, IEICE Technical Report, 2008/04
  • SiO2 formation by oxidation of crystalline and hydrogenated amorphous Si in atmospheric pressure plasma excited by very high frequency power, Hiroaki Kakiuchi,Hiromasa Ohmi,Makoto Harada,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Vol. 47, No. 3, p. 1884-1888, 2008/03/21
  • SiO2 formation by oxidation of crystalline and hydrogenated amorphous Si in atmospheric pressure plasma excited by very high frequency power, Hiroaki Kakiuchi,Hiromasa Ohmi,Makoto Harada,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Vol. 47, No. 3, p. 1884-1888, 2008/03/21
  • Structural Optimization of HfTiSiO High-k Gate Dielectrics by Utilizing In-Situ PVD-Based Fabrication Method, H. Arimura,S. Horie,Y. Oku,T. Minami,N. Kitano,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, Applied Surface Science, 2008/03
  • Selective Epitaxial Growth of In Situ Carbon-Doped Silicon on Silicon Substrates, T. Ikuta,S. Fujita,H. Iwamoto,H. Iwamoto,S. Kadomura,T. Shimura,H. Watanabe,K. Yasutake, Surface and Interface Analysis, 2008/03
  • Extremely Low Leakage Current from Ultra-thin HfO2 Films Formed by Neutral Beam Enhanced Atomic Layer Deposition, T. Ikoma,H. Yoshikawa,K. Kobayashi,T. Koganezawa,I. Hirosawa,H. Watanabe,S. Samukawa, Abstracts of 2008 MRS Spring Meeting, H4.46., 2008/03
  • MOSトランジスタ -ゲート絶縁膜形成技術の進展と今後の展開-, 渡部平司, 電気学会誌, 2008/03
  • Characterization of Strained Si Wafers by Synchrotron X-Ray Topography, Takayoshi SHIMURA,Kohta KAWAMURA,Masahiro ASAKAWA,Heiji WATANABE,Kiyoshi YASUTAKE,Atsushi OGURA, Photon Factory Activity Report 2006, 2008/02
  • Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects, M. Sato,N. Umezawa,J. Shimokawa,H. Arimura,S. Sugino,A. Tachibana,M. Nakamura,N. Mise,S. Kamiyama,T. Morooka,T. Eimori,K. Shiraishi,K. Yamabe,H. Watanabe,KYamada,T. Aoyama,T. Nabatame,Y. Nara,Y. Ohji, Technical Digest - International Electron Devices Meeting, IEDM, 2008
  • Theoretical investigations on metal/high-k interfaces, K. Shiraishi,T. Nakayama,S. Miyazaki,A. Ohta,Y. Akasaka,H. Watanabe,Y. Nara,K. Yamada, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, p. 1256-1259, 2008
  • Observation of crystalline imperfections in supercritical thickness strained silicon on insulator wafers by synchrotron X-ray topography, T. Shimura,T. Inouea,Y. Okamoto,T. Hosoi,H. Edo,S. Iida,A. Ogura,H. Watanabe, ECS Transactions, Vol. 16, No. 10, p. 539-543, 2008
  • Observation of crystalline imperfections in supercritical thickness strained silicon on insulator wafers by synchrotron X-ray topography, T. Shimura,T. Inouea,Y. Okamoto,T. Hosoi,H. Edo,S. Iida,A. Ogura,H. Watanabe, ECS Transactions, Vol. 16, No. 10, p. 539-543, 2008
  • Dielectric and interface properties of TiO2/HfSiO/SiO 2 layered structures fabricated By in situ pvd method, H. Arimura,Y. Naitou,N. Kitano,Y. Oku,N. Yamaguchi,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, ECS Transactions, Vol. 16, No. 5, p. 121-129, 2008
  • Dielectric and interface properties of TiO2/HfSiO/SiO 2 layered structures fabricated By in situ pvd method, H. Arimura,Y. Naitou,N. Kitano,Y. Oku,N. Yamaguchi,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, ECS Transactions, Vol. 16, No. 5, p. 121-129, 2008
  • Effect of annealing on electronic characteristics of HfSiON films fabricated by Damascene gate process, K. Yamabe,K. Murata,T. Hayashi,T. Tamura,M. Sato,A. Uedono,K. Shiraishi,N. Umezawa,T. Chikyow,H. Watanabe,Y. Nara,Y. Ohji,S. Miyazaki,K. Yamada,R. Hasunuma, ECS Transactions, Vol. 16, No. 5, p. 521-526, 2008
  • Effect of annealing on electronic characteristics of HfSiON films fabricated by Damascene gate process, K. Yamabe,K. Murata,T. Hayashi,T. Tamura,M. Sato,A. Uedono,K. Shiraishi,N. Umezawa,T. Chikyow,H. Watanabe,Y. Nara,Y. Ohji,S. Miyazaki,K. Yamada,R. Hasunuma, ECS Transactions, Vol. 16, No. 5, p. 521-526, 2008
  • Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-k Gate Stacks, Heiji Watanabe,Shinichi Yoshida,Yuki Kita,Takuji Hosoi,Takayoshi Shimura,Kenji Shiraishi,Yasuo Nara,Keisaku Yamada, PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6, ELECTROCHEMICAL SOC INC, Vol. 16, No. 5, p. 27-+, 2008
  • Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-k Gate Stacks, Heiji Watanabe,Shinichi Yoshida,Yuki Kita,Takuji Hosoi,Takayoshi Shimura,Kenji Shiraishi,Yasuo Nara,Keisaku Yamada, PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6, ELECTROCHEMICAL SOC INC, Vol. 16, No. 5, p. 27-+, 2008
  • Excellent electrical properties of TiO2/HfSiO/SiO2 layered higher-k gate dielectrics with sub-1 nm equivalent oxide thickness, Hiroaki Arimura,Naomu Kitano,Yuichi Naitou,Yudai Oku,Takashi Minami,Motomu Kosuda,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 92, No. 21, 2008
  • Control of crystalline microstructures in metal gate electrodes for nano CMOS devices, K. Ohmori,T. Chikyow,T. Hosoi,H. Watanabe,K. Nakajima,T. Adachi,A. Ishikawa,Y. Sugita,Y. Nara,Y. Ohji,K. Shiraishi,K. Yamabe, ECS Transactions, Vol. 13, No. 2, p. 201-207, 2008
  • Application of synchrotron X-ray diffraction methods to gate stacks of advanced MOS Devices, T. Shimura,T. Inoue,Y. Okamoto,T. Hosoi,A. Ogura,O. Sakata,S. Kimura,H. Edo,S. Iida,H. Watanabe, ECS Transactions, Vol. 13, No. 2, p. 75-82, 2008
  • Control of crystalline microstructures in metal gate electrodes for nano CMOS devices, K. Ohmori,T. Chikyow,T. Hosoi,H. Watanabe,K. Nakajima,T. Adachi,A. Ishikawa,Y. Sugita,Y. Nara,Y. Ohji,K. Shiraishi,K. Yamabe, ECS Transactions, Vol. 13, No. 2, p. 201-207, 2008
  • Application of synchrotron X-ray diffraction methods to gate stacks of advanced MOS Devices, T. Shimura,T. Inoue,Y. Okamoto,T. Hosoi,A. Ogura,O. Sakata,S. Kimura,H. Edo,S. Iida,H. Watanabe, ECS Transactions, Vol. 13, No. 2, p. 75-82, 2008
  • Characterization of strained Si wafers by X-ray diffraction techniques, Takayoshi Shimura,Kohta Kawamura,Masahiro Asakawa,Heiji Watanabe,Kiyoshi Yasutake,Atsushi Ogura,Kazunori Fukuda,Osami Sakata,Shigeru Kimura,Hiroki Edo,Satoshi Iida,Masataka Umeno, Journal of Materials Science: Materials in Electronics, Vol. 19, No. 1, p. S189-S193, 2008
  • In situ arsenic-doped Si1-y Cy selective epitaxial growth under atmospheric pressure, Tetsuya Ikuta,Shigeru Fujita,Hayato Iwamoto,Shingo Kadomura,Takayoshi Shimura,Heiji Watanabe,Kiyoshi Yasutake, Applied Physics Letters, Vol. 92, No. 4, 2008
  • Characterization of Strained Si Wafers by using Synchrotron X-ray Diffraction Methods, T. Inoue,Y. Okamoto,A. Ogura,H. Edo,S. Iida,K. Fukuta,O. Sakata,S. Kimura,M. Umeno,T. Shimura,K. Yasutake,H. Watanabe, 2008/01
  • Fundamental aspects of effective work function instability at metal/high-k interfaces, Y. Kagei,Y. Kita,T. Hosoi,T. Shimura,H. Watanabe,K. Shiraishi,M. Kadoshima,Y. Nara,K. Yamada, 2008/01
  • Characteristics of p-MISFETs with TiN/HfSiON Gate Stacks Fabricated by PVD-based In-situ Method, N. Kitano,H. Arimura,S. Horie,S. Sakashita,Y. Nishida,J. Yugami,T. Minami,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, 2008/01
  • Study on Thermal and Humidity of GeN4 Thin Layers Fabricated by Plasma Nitridation, K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura, K,H. Watanabe, 2008/01
  • Achievement of sub-1nm EOT high-k gate dielectrics with TiO2/HfSiO/SiO2 layered structure, H. Arimura,S. Horie,Y. Oku,T. Minami,N. Kitano,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, 2008/01
  • Improvement in Threshold Voltage Increase of Metal Gate/HiSiON p-MOSFET, M. Kadoshima,Y. Sugita,K. Shiraishi,H. Watanabe,A. Ohta,S. Miyazaki,K. Nakajima,T. Chikyow,K. Yamada,T. Aminaka,E. Kurosawa,T. Matsuki,T Aoyama,Y. Nara,Y. Ohji, 2008/01
  • Charge trapping properties in Ti O2 HfSiOSi O2 gate stacks probed by scanning capacitance microscopy, Y. Naitou,H. Arimura,N. Kitano,S. Horie,T. Minami,M. Kosuda,H. Ogiso,T. Hosoi,T. Shimura,H. Watanabe, Applied Physics Letters, Vol. 92, No. 1, 2008
  • A Comprehensive Study on Effective Work Function Modulation of Metal/High-k Gate Stacks, T. Hosoi,Y. Kita,Y.Kagei,T.Shimura,H. Watanabe,K. Shiraishi,Y. Nara,K. Yamada, Abstracts, 38th IEEE Semiconductor Interface Specialists Conference, 2007/12
  • Enhanced Performance of Gate-First p-Channel Metal-Insulator-Srmiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method, N. Kitano,S. Horie,H. Arimura,T. Kawahara,S. Sakashita,Y. Nishida,J. Yugami,T. Minami,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, Jpn.J.Appl.Phys. 46 (2007) L1111-L1113., 2007/11
  • Structural Optimization of HfTiSiO High-k Gate Dielectrics by Utilizing In-Situ PVD-Based Fabrication Method, H. Arimura,S. Horie,T. Minami,N. Kitano,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts & ProgramFifth International Symposium on Control of Semiconductor Interfaces - for Next Generation ULSI Process Integrations -, 2007/11
  • Systematic Consideration on Si Substrate Depletion Appeared in p-Metal/Hf-Based HIGK-k Gate Stacks, K. Shiraishi,Y. Akasaka,M. Kadoshima,T. Nakayama,S. Miyazaki,H. Watanabe,T. Chikyow,Y. Nara,Y. Ohji,K. Yamabe,K. Yamada, The Sixth Pacific Rim International Conference on Advanced Materials and Processing, 2007/11
  • Low-Temperature Oxidation of Crystalline and Hydrogenated Amorphous Si Using Very High Frequency Plasma at Atmospheric Pressure, H. Kakiuchi,H. Ohmi,M. Harada,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan, 2007/10
  • Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process, H. Kakiuchi,H. Ohmi,M. Harada,H. Watanabe,K. Yasutake, Appl. Phys. Lett., 2007/10
  • Enhanced Electrical Properties of TiN/HfSiON Gate Stacks by Using the PVD-based In-situ Fabrication Method, N. Kitano,H. Arimura,S. Horie,T. Minami,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, 2007/10
  • Selective Epitaxial Growth of In-situ Carbon-Doped Si on Si Substrates, T. Ikuta,S. Fujita,H. Iwamoto,S. Kadomura,T. Shimura,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, 2007/10
  • Single electron trapping within high-temperature annealed high-k dielectric films detected by scanning capacitance microscopy, Y. Naitou,A. Ando,H. Ogiso,S. Kamiyama,Y. Nara,H. Watanabe, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, 2007/10
  • Interface Properties of HfTiSiO Gate Dielectrics Formed by In-Situ PVD-Based Fabrication Method, H. Arimura,S. Horie,T. Minami,N. Kitano,M. Kosuda,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, 2007/10
  • Systematic Study on Interface Dipole of Metal/High-k Gate Stacks, Y. Kita,S. Yoshida,T. Hosoi,T. Shimura,H. Watanabe,K. Shiraishi,Y. Nara,K. Yamada, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, 2007/10
  • Proposal of AION/SiO2 Layered Gate Dielectric for SiC MOS Devices, M. Harada,Y. Watanabe,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, 2007/10
  • Thermal Stability of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nirridation, K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura,H. Watanabe, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, 2007/10
  • Low-Temperature Oxidation of Crystalline and Hydrogenated Amorphous Si Using Very High Frequency Plasma at Atmospheric Pressure, H. Kakiuchi,H. Ohmi,M. Harada,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, 2007/10
  • Correlation between surface topography and static capacitance image of ultrathin SiO2 films evaluated by scanning capacitance microscopy, Yuichi Naitou,Atsushi Ando,Hisato Ogiso,Siro Kamohara,Fumiko Yano,Akio Nishida,Heiji Watanabe, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 9 A, p. 5992-5999, 2007/09/07
  • Characterization of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation, K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura,K. Yasutake,H. Watanabe, Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS, TSUKUBA, 2007, 2007/09
  • Systematic Study on Fermi level pining of Hf-based high-k gate stacks, K. Shiraishi,Y. Akasaka,G. Nakamura,M. Kadoshima,H. Watanabe,K. Ohmori,T.Chikyow,K. Yamabe,Y. Nara,Y. Ohji,K. Yamada, Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS, TSUKUBA, 2007, 2007/09
  • In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET, T. Ikuta,Y. Miyanami,S. Fujita,H. Iwamoto,S. Kadomura,T. Shimura,H. Watanabe,K. Yasutake, Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS, TSUKUBA, 2007, 2007/09
  • Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction(SPIR) Method, N. Kitano,H. Arimura,S. Horie,T. Hosoi,T. Shimura,H. Watanabe,T. Kawahara,S. Sakashita,Y. Nishida,J. Yugami,T. Minami,M. Kosuda, Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS TSUKUBA, 2007, 2007/09
  • First-principles study on electronic structures and dielectric properties of Si/SiO2 interface, Tomoya Ono,Katsuhiro Kutsuki,Yoshiyuki Egami,Heiji Watanabe,Kikuji Hirose, Journal of Physics: Condensed Matter, 2007/08
  • Experimental study on improvement of the Fermi-level pinning in metal/HfSiON gate stack, Masaru Kadoshima,Yoshihiro Sugita,Kenji Shiraishi,Heiji Watanabe,Akio Ohta,Seiichi Miyazaki,Kiyomi Nakajima,Toyohiro Chikyow,Keisaku Yamada,Toshio Aminaka,Etsuo Kurosawa,Takeo Matsuki,Takayuki Aoyama,Yasuo Nara,Yuzuru Ohji, PROCEEDINGS OF THE 71ST SYMPOSIUM ON SEMICONDUCTORS AND INTEGRATED CIRCUITS TECHNOLOGY, 2007/07
  • Low-Temperature Oxidation Process of Silicon Using Atmospheric Pressure Plasma, H. Kakiuchi,H. Ohmi,M. Harada,H. Watanabe,K. Yasutake, Digest of Technical Papers of the 14th International Workshop on Active-Matrix Flatpanel Displays and Devices, 11–13 July 2007, Hyogo, Japan., 2007/07
  • Formation and characterization of Ge3N4 thin layers, K. Kutsuki,G. Okamoto,T. Hosoi,T. Shimura,K. Yasutake,H. Watanabe, Formation and characterization of Ge3N4 thin layers, 2007/06
  • Characterization of metal/high-k structures using monoenergetic positron beams, Akira Uedono,Tatsuya Naito,Takashi Otsuka,Kenichi Ito,Kenji Shiraishi,Kikuo Yamabe,Seiichi Miyazaki,Heiji Watanabe,Naoto Umezawa,Toyohiro Chikyow,Toshiyuki Ohdaira,Ryoichi Suzuki,Yasushi Akasaka,Satoshi Kamiyama,Yasuo Nara,Keisaku Yamada, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 46, No. 5B, p. 3214-3218, 2007/05
  • Characterization of epitaxial Si films grown at low-temperatures by atmospheric pressure plasma CVD, Y. Kirihata,N. Tawara,H. Ohmi,H. Kakiuchi,H. Watanabe,K. Yasutake, Abstracts 5th Int. Conf. on Silicon Epitaxy and Heterostructures, 2007/05
  • Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High- $\kappa$ Dielectrics, N. Umezawa,K. Shiraishi,K. Torii,M. Boero,T. Chikyow,H. Watanabe,K. Yamabe,T. Ohno,K. Yamada,Y. Nara, IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), Vol. 28, No. 5, p. 363-365, 2007/05
  • Atmospheric in situ arsenic-doped SiGe selective epitaxial growth for raised-extension N-type metal-oxide-semiconductor field-effect transistor, Tetsuya Ikuta,Yuki Miyanami,Shigeru Fujita,Hayato Iwamoto,Shingo Kadomura,Takayoshi Shimura,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, p. 1916-1920, 2007/04/24
  • Impact of physical vapor deposition-based In situ fabrication method on metal/high-k gate stacks, Heiji Watanabe,Shinya Horie,Takashi Minami,Naomu Kitano,Motomu Kosuda,Takayoshi Shimura,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, p. 1910-1915, 2007/04/24
  • Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures, K. Ohmori,P. Ahmet,M. Yoshitake,T. Chikyow,K. Shiraishi,K. Yamabe,H. Watanabe,Y. Akasaka,Y. Nara,K.-S. Chang,M. L. Green,K. Yamada, Journal of Applied Physics, AIP Publishing, Vol. 101, No. 8, p. 084118-084118, 2007/04/15
  • Formation of Silicon Dioxide Layers at Low Temperatures (150-400 C) by Atmospheric Pressure Plasma Oxidation of Silicon, H. Kakiuchi,H. Ohmi,M. Harada,H. Watanabe,K. Yasutake, Sci. Technol. Adv. Mater., 2007/04
  • Controllability of Flatband Voltage in Metal/High-k Gate Stack Structures., K. Ohmori,P. Ahmet,K. Kakushima,H. Yoshikawa,K. Shiraishi,N. Umezawa,K. Nakajima,M. Yoshitake,K. Kobayashi,K. Yamabe,H. Watanabe,Y. Nara,T. Nakayama,M. L. Green,H. Iwai,K. Yamada,T. Chikyow, Abstracts of 2007MRS Spring Meeting Abstracts, 2007/04
  • Investigation of 4H-SiC MIS Devices with AlON/SiO2 Layered Structures., M. Harada,Y. Watanabe,S. Okda,T. Shimura,K. Yasutake,H. Watanabe, Abstracts of 2007 MRS Spring Meeting, 2007/04
  • Formation of Low-Leakage-current Ultra-thin SiO2 Films Using Low-temperature Neutral Beam Oxidation., T. Ikoma,S. Fukuda,K. Endo,H. Watanabe,S. Samukawa, Abstracts of 2007 MRS Spring Meeting, 2007/04
  • Systematic Study on Effective Work Function Instability of Metal/High-k Gate Stacks., Y.Kita,S. Yoshida,T. Shimura,K. Yasutake,H. Watanabe,K. Shiraishi,Y. Nara,K. Yamada, Abstracts of 2007 MRS Spring Meeting, 2007/04
  • Improving the Electrical Properties of TiN/HfSiO Gate Stacks using the PVD-based In-situ Fabrication Method., N. Kitano,S. Horie,T. Minamo,M. Kosuda,T. Shimura,K. Shiraishi,H. Watanabe, Abstracts of 2007 MRS Spring Meeting, 2007/04
  • Two type of Oxgen Vacancies in Hf-based High-k Dielectrics-Existence of "Alive" and "Dead" Oxygen Vacancies., K. Shiraishi,T. Nakayama,S. Miyazaki,N. Umezawa,K. Yamada,H. Watanabe,T. Chikyow,Y. Nara,K. Yamada, Abstracts of 2007 MRS Spring Meeting, 2007/04
  • Characterization of TiN/HfSiON gate stacks fabricated by the PVD-based in-situ method, H. Arimura,S. Horie,T. Minami,N. Kitano,M. Kosuda,T. Shimura,K. Shiraishi,H. Watanabe, Extended Abstracts of 2007 IMFEDK International Meeting for Future of Electron Devices,Kansai, 2007/04
  • Electric properties of 4H-SiC MIS devices with AlON/SiO2 stacked gate dielectrics, Y. Watanabe,M. Harada,S. Okada,T. Shimura,K. Yasutake,H. Watanabe, Extended Abstracts of 2007 IMFEDK International Meeting for Future of Electron Devices,Kansai, 2007/04
  • Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition, Kiyoshi Yasutake,Naotaka Tawara,Hiromasa Ohmi,Yoshikazu Terai,Hiroaki Kakiuchi,Heiji Watanabe,Yasufumi Fujiwara, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, p. 2510-2515, 2007/04
  • Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar/O2 plasma, H. Kakiuchi,H. Ohmi,M. Harada,H. Watanabe,K. Yasutake, Appl. Phys. Lett., 2007/04
  • Isotopic labeling study of the oxygen diffusion in HfO2∕SiO2∕Si, Ming Zhao,Kaoru Nakajima,Motofumi Suzuki,Kenji Kimura,Masashi Uematsu,Kazuyoshi Torii,Satoshi Kamiyama,Yasuo Nara,Heiji Watanabe,Kenji Shiraishi,Toyohiro Chikyow,Keisaku Yamada, Applied Physics Letters, AIP Publishing, Vol. 90, No. 13, p. 133510-133510, 2007/03/26
  • Novel In-situ Fabrication Method for High-quality metal/High-k Gate Stacks by Utilizing Low-damage Sputtering System, H. Wtanabe,T. Shimura,T. Minami,N. Kitano,M. Kosuda, CANON ANELVA CORPORATION Technical Reports, 2007/03
  • Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial cheical vapor deposition, T.Ikuta,Y. Miyanami,S.Fujita,H. Iwamoto,S. Kadomura,T. Simura,H. Watanabe,K. Yasutake, Science and Technology of Advanced Marerials, 2007/03
  • Interface reactions at TiN/HfSiON gate stacs: Dependence on the electrode structure and deposition method, S. Yoshida,Y. Watanabe,Y. Kita,T. Shimura,H. Watanabe,K. Yasutake,Y. Akasaka,Y. Nara,K. Yamada, Science and Technology of Advanced Marerials, 2007/03
  • Residual Order in the Interfacial SiO2 Layer between a High-k Material and a Si Substrate, Takayoshi SHIMURA,Eiji MISHIMA,Kohta KAWAMURA,Heiji WATANABE,Kiyoshi YASUTAKE, Photon Factory Activity Report 2005, 2007/02
  • Study on Interface Reactions of HfSix/HfO2/Si Gate Stacks for Advanced nMOSFET Application, Yuki Kita,Shinichi Yoshida,Takashi Ando,Kaori Tai,Hayato Iwamoto,Takayoshi Shimura,Heiji Watanabe,Kiyoshi Yasutake, Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics, 2007/02
  • Observation and Mechanism of Self-limiting Oxidation of SiGe/SOI structure, Takayoshi Shimura,Michihiro Shimizu,Shinichiro Horiuchi,Heiji Watanabe,Kiyoshi Yasutake,Masataka Umeno, Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics, 2007/02
  • A New Insight into Control of Fermi Level Pinnng in TiN/HfSiON Gate Stack, Akio Ohta,Seiichi Miyazaki,Yasushi Akasaka,Heiji Watanabe,Osaka Universtiy,Kenji Shiraishi,Keisaku Yamada,Seiji Inumiya,Yasuo Nara, Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics, 2007/02
  • Structural and Electrical Properties of TiN/HfSiON Gate Stacks Fabricated by PVD-based In-situ Fabrication Method, Shinya Horie,Takashi Minami,Naomu Kitano,Motomu Kosuda,Takayoshi Shimura,Kenji Shiraishi,Heiji Watanabe, Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics, 2007/02
  • Sub-1nm HfSix/HfO2 Gate Stack Using Novel Si Extrusion Process for High Performance Application, Ando,T. Hirano,K. Tai,S. Yamaguchi,T. Kato,Y. Hagimoto,K. Watanabe,R. Yamamoto,S. Kanda,K. Nagano,S. Terauchi,Y. Tateshita,Y. Tagawa,M. Saito,H. Iwamoto,S. Yoshida,H. Watanabe,N. Nagashima,S. Kadomura, Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics, 2007/02
  • Mechanism of suppressed change in effective work functions for impurity-doped fully silicided NiSi electrodes on Hf-based gate dielectrics, Kenzo Manabe,Takashi Hase,Toru Tatsumi,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 1, p. 91-97, 2007/01/10
  • Mechanism of suppressed change in effective work functions for impurity-doped fully silicided NiSi electrodes on Hf-based gate dielectrics, Kenzo Manabe,Takashi Hase,Toru Tatsumi,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 1, p. 91-97, 2007/01/10
  • Thermal and humidity stability of Ge3N4 thin layers fabricated by high-density plasma nitridation, Katsuhiro Kutsuki,Gaku Okamoto,Takuji Hosoi,Akitaka Yoshigoe,Yuden Teraoka,Takayoshi Shimura,Heiji Watanabe, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007
  • Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes, K. Ohmori,T. Chikyow,T. Hosoi,H. Watanabe,K. Nakajima,T. Adachi,A. Ishikawa,Y. Sugita,Y. Nara,Y. Ohji,K. Shiraishi,K. Yamabe,K. Yamada, Technical Digest - International Electron Devices Meeting, IEDM, p. 345-348, 2007
  • Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation, Katsuhiro Kutsuki,Gaku Okamoto,Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, Applied Physics Letters, Vol. 91, No. 16, 2007
  • Interface reaction of high-k gate stack structures observed by high-resolution RBS, Zhao Ming,Kaoru Nakajima,Motofumi Suzuki,Kenji Kimura,Masashi Uematsu,Kazuyoshi Torii,Satoshi Kamiyama,Yasuo Nara,Heiji Watanabe,Kenji Shiraishi,Toyohiro Chikyow,Keisaku Yamada, ECS Transactions, Vol. 11, No. 4, p. 103-115, 2007
  • Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics, K. Shiraishi,Y. Akasaka,G. Nakamura,M. Kadoshima,H. Watanabe,A. Ohta,S. Miyazaki,K. Ohmori,T. Chikyow,K. Yamabe,Y. Nara,Y. Ohji,K. Yamada, ECS Transactions, Vol. 11, No. 4, p. 125-133, 2007
  • Improvement in fermi-level pinning of p-MOS metal gate electrodes on HfSiON by employing Ru gate electrodes, M. Kadoshima,Y. Sugita,K. Shiraishi,H. Watanabe,A. Ohta,S. Miyazaki,K. Nakajima,T. Chikyow,K. Yamada,T. Aminaka,E. Kurosawa,T. Matsuki,T. Aoyama,Y. Nara,Y. Ohji, ECS Transactions, Vol. 11, No. 4, p. 169-180, 2007
  • Tight distribution of dielectric characteristics of HfSiON in metal gate devices, R. Hasunuma,T. Naito,C. Tamura,A. Uedono,K. Shiraishi,N. Umezawa,T. Chikyow,S. Inumiya,M. Sato,Y. Tamura,H. Watanabe,Y. Nara,Y. Ohji,S. Miyazaki,K. Yamada,K. Yamabe, ECS Transactions, Vol. 11, No. 4, p. 3-11, 2007
  • High performance gate-first pMISFET with TiN/HfSiON gate stacks fabricated with PVD-based in-situ method, Takaaki Kawahara,Yukio Nishida,Shinsuke Sakashita,Jiro Yugami,Naomu Kitano,Takashi Minami,Motomu Kosuda,Shinya Horie,Hiroaki Arimura,Takayoshi Shimura,Heiji Watanabe, ECS Transactions, Vol. 11, No. 4, p. 585-599, 2007
  • Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams, A. Uedono,R. Hasunuma,K. Shiraishi,K. Yamabe,S. Inumiya,Y. Akasaka,S. Kamiyama,T. Matsuki,T. Aoyama,Y. Nara,S. Miyazaki,H. Watanabe,N. Umezawa,T. Chikyow,S. Ishibashi,T. Ohdaira,R. Suzuki,K. Yamada, ECS Transactions, Vol. 11, No. 4, p. 81-90, 2007
  • Study of high-k gate dielectrics by means of positron annihilation, A. Uedon,T. Naito,T. Otsuka,K. Ito,K. Shiraishi,K. Yamabe,S. Miyazaki,H. Watanabe,N. Umezawa,A. Hamid,T. Chikyow,T. Ohdaira,R. Suzuki,S. Ishibashi,S. Inumiya,S. Kamiyama,Y. Akasaka,Y. Nara,K. Yamada, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 10, p. 3599-3604, 2007
  • High performance gate-first pMISFET with TiN/HfSiON gate stacks fabricated with PVD-based in-situ method, Takaaki Kawahara,Yukio Nishida,Shinsuke Sakashita,Jiro Yugami,Naomu Kitano,Takashi Minami,Motomu Kosuda,Shinya Horie,Hiroaki Arimura,Takayoshi Shimura,Heiji Watanabe, ECS Transactions, Vol. 11, No. 4, p. 585-599, 2007
  • Improvement in fermi-level pinning of p-MOS metal gate electrodes on HfSiON by employing Ru gate electrodes, M. Kadoshima,Y. Sugita,K. Shiraishi,H. Watanabe,A. Ohta,S. Miyazaki,K. Nakajima,T. Chikyow,K. Yamada,T. Aminaka,E. Kurosawa,T. Matsuki,T. Aoyama,Y. Nara,Y. Ohji, ECS Transactions, Vol. 11, No. 4, p. 169-180, 2007
  • Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics, K. Shiraishi,Y. Akasaka,G. Nakamura,M. Kadoshima,H. Watanabe,A. Ohta,S. Miyazaki,K. Ohmori,T. Chikyow,K. Yamabe,Y. Nara,Y. Ohji,K. Yamada, ECS Transactions, Vol. 11, No. 4, p. 125-133, 2007
  • Interface reaction of high-k gate stack structures observed by high-resolution RBS, Zhao Ming,Kaoru Nakajima,Motofumi Suzuki,Kenji Kimura,Masashi Uematsu,Kazuyoshi Torii,Satoshi Kamiyama,Yasuo Nara,Heiji Watanabe,Kenji Shiraishi,Toyohiro Chikyow,Keisaku Yamada, ECS Transactions, Vol. 11, No. 4, p. 103-115, 2007
  • Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams, A. Uedono,R. Hasunuma,K. Shiraishi,K. Yamabe,S. Inumiya,Y. Akasaka,S. Kamiyama,T. Matsuki,T. Aoyama,Y. Nara,S. Miyazaki,H. Watanabe,N. Umezawa,T. Chikyow,S. Ishibashi,T. Ohdaira,R. Suzuki,K. Yamada, ECS Transactions, Vol. 11, No. 4, p. 81-90, 2007
  • Tight distribution of dielectric characteristics of HfSiON in metal gate devices, R. Hasunuma,T. Naito,C. Tamura,A. Uedono,K. Shiraishi,N. Umezawa,T. Chikyow,S. Inumiya,M. Sato,Y. Tamura,H. Watanabe,Y. Nara,Y. Ohji,S. Miyazaki,K. Yamada,K. Yamabe, ECS Transactions, Vol. 11, No. 4, p. 3-11, 2007
  • Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure, Tetsuya Ikuta,Shigeru Fujita,Hayato Iwamoto,Shingo Kadomura,Takayoshi Shimura,Heiji Watanabe,Kiyoshi Yasutake, Applied Physics Letters, Vol. 91, No. 9, 2007
  • Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS, M. Kadoshima,Y. Sugita,K. Shiraishi,H. Watanabe,A. Ohta,S. Miyazaki,K. Nakajima,T. Chikyow,K. Yamada,T. Aminaka,E. Kurosawa,T. Matsuki,T. Aoyama,Y. Nara,Y. Ohji, Digest of Technical Papers - Symposium on VLSI Technology, p. 66-67, 2007
  • Theoretical studies on metal/high-k gate stacks, Kenji Shiraishi,Yasushi Akasaka,Genji Nakamura,Takashi Nakayama,Seiichi Miyazaki,Heiji Watanabe,Akio Ohta,Kenji Ohmori,Toyohiro Chikyow,Yasuo Nara,Kikuo Yamabe,Keisaku Yamada, ECS Transactions, Vol. 6, No. 1, p. 191-204, 2007
  • Interface engineering by PVD-based in-situ fabrication method for advanced metal/high-k gate stacks, Heiji Watanabe,Shinya Horie,Hiroaki Arimura,Naomu Kitano,Takashi Minami,Motomu Kosuda,Takayoshi Shimura,Kiyoshi Yasutake, ECS Transactions, Vol. 6, No. 3, p. 71-85, 2007
  • Theoretical studies on metal/high-k gate stacks, Kenji Shiraishi,Yasushi Akasaka,Genji Nakamura,Takashi Nakayama,Seiichi Miyazaki,Heiji Watanabe,Akio Ohta,Kenji Ohmori,Toyohiro Chikyow,Yasuo Nara,Kikuo Yamabe,Keisaku Yamada, ECS Transactions, Vol. 6, No. 1, p. 191-204, 2007
  • Interface engineering by PVD-based in-situ fabrication method for advanced metal/high-k gate stacks, Heiji Watanabe,Shinya Horie,Hiroaki Arimura,Naomu Kitano,Takashi Minami,Motomu Kosuda,Takayoshi Shimura,Kiyoshi Yasutake, ECS Transactions, Vol. 6, No. 3, p. 71-85, 2007
  • Investigation of local charged defects within high-temperature annealed HfSiONSi O2 gate stacks by scanning capacitance spectroscopy, Y. Naitou,A. Ando,H. Ogiso,S. Kamiyama,Y. Nara,K. Yasutake,H. Watanabe, Journal of Applied Physics, Vol. 101, No. 8, 2007
  • Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2, K. Ohmori,P. Ahmet,K. Shiraishi,K. Yamabe,H. Watanabe,Y. Akasaka,N. Umezawa,K. Nakajima,M. Yoshitake,T. Nakayama,K. S. Chang,K. Kakushima,Y. Nara,M. L. Green,H. Iwai,K. Yamada,T. Chikyow, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, p. 376-379, 2007
  • Physics of interfaces between gate electrodes and high-k dielectrics, K. Shiraishi,H. Takeuchi,Y. Akasaka,T. Nakayama,S. Miyazaki,T. Nakaoka,A. Ohta,H. Watanabe,N. Umezawa,K. Ohmori,P. Ahmet,K. Toii,T. Chikyow,Y. Nara,T.-J. King Liu,H. Iwai,K. Yamada, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, p. 384-387, 2007
  • Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma, Hiroaki Kakiuchi,Hiromasa Ohmi,Makoto Harada,Heiji Watanabe,Kiyoshi Yasutake, Applied Physics Letters, Vol. 90, No. 9, 2007
  • Recent Progress in Understanding the Mechanism of Schottky Barrier Height Formation at Various Interfaces (INVITED), K. Shiraishi,T. Nakayama,S. Okada,S. Miyazaki,H. Watanabe,Y. Akasaka,T. Chikyow,Y. Nara,K. Yamada, Abstrasts of International Symposium on Theories of Organic/Metal Interfaces, p24., 2007/01
  • Theory of fermi level pinning of high-k dielectrics, Kenji Shiraishi,Yasushi Akasaka,Naoto Umezawa,Yasuo Nara,Keisaku Yamada,Hideki Takeuchi,Heiji Watanabe,Toyohiro Chikyow,Tsu-Jae King Liu, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, p. 306-313, 2007
  • Physics of interfaces between gate electrodes and high-k dielectrics, K. Shiraishi,H. Takeuchi,Y. Akasaka,T. Nakayama,S. Miyazaki,T. Nakaoka,A. Ohta,H. Watanabe,N. Umezawa,K. Ohmori,P. Ahmet,K. Toii,T. Chikyow,Y. Nara,T.-J. King Liu,H. Iwai,K. Yamada, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, p. 384-387, 2007
  • Study of high-k gate dielectrics by means of positron annihilation, A. Uedon,T. Naito,T. Otsuka,K. Ito,K. Shiraishi,K. Yamabe,S. Miyazaki,H. Watanabe,N. Umezawa,A. Hamid,T. Chikyow,T. Ohdaira,R. Suzuki,S. Ishibashi,S. Inumiya,S. Kamiyama,Y. Akasaka,Y. Nara,K. Yamada, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 10, p. 3599-3604, 2007
  • Mechanism for fermi level pinning at electrode/Hf-based dielectric interface: Systematic study of dependence of effective work functions for polycrystalline silicon and fully silicided NiSi electrodes on Hf density at interface, Kenzo Manabe,Takashi Hase,Toru Tatsumi,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 12, p. 9053-9057, 2006/12/15
  • Modified oxygen vacancy induced fermi level pinning model extendable to P-metal pinning, Yasushi Akasaka,Genji Nakamura,Kenji Shiraishi,Naoto Umezawa,Kikuo Yamabe,Osamu Ogawa,Myoungbum Lee,Toshio Amiaka,Tooru Kasuya,Heiji Watanabe,Toyohiro Chikyow,Fumio Ootsuka,Yasuo Nara,Kunio Nakamura, Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 46-50, p. L1289-L1292, 2006/12
  • A New Theoretical Insight for the Schottky Barrier Heights, K. Shiraishi,T. Nakayama,S. Okada,Y. Akasaka,S. Miyazaki,T. Nakaoka,A. Ohta,K. Torii,H. Watanabe,T. Chikyow,Y. Nara,K. Yamada, International Conference on Quantum Simulators and Design, O-9, Hiroshima, Japan, 2006., 2006/12
  • Physical and Electrical Characterization of HfSix/HfO2 Gate Stacks for High-Performance nMOSFET Application, S. Yoshida,Y. Kita,T. Ando,K. Tai,H. Iwamoto,T. Shimura,H. Watanabe,K. Yasutake, Abstracts of 37th IEEE Semiconductor Interface Specialists Conference 3-3., 2006/12
  • Structural Change of the Interfacial SiO$_2$ Layer between HfO$_2$ layers and Si Substrates, Takayoshi Shimura,Eiji Mishima,Kohta Kawamura,Heiji Watanabe,Kiyoshi Yasutake, Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices - Science and Technology, 2006/11
  • Interface Engineering of High-k Gate Dielectrics for Advanced CMOS (INVITED), H. Watanabe, Abstracts of Handai Nanoscience and Technology International Symposium 2006, pp. 30, Osaka, Japan., 2006/11
  • 大気圧プラズマによるSi表面の高速酸化, 原田真,垣内弘章,大参宏昌,渡部平司,安武潔, 薄膜材料デバイス研究会 第3回研究集会予稿集「薄膜デバイスの新展開」pp. 149.-150., 2006/11
  • A. New Insight into Control of Fermi Level Pinning in TiN/HfSiON Gate Stacks, A. Ohta,S. Miyazaki,Y. Akasaka,H. Watanabe,K. Shiraishi,K. Yamada,S. Inumiya,Y. Nara, Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices –Science and Technology-, pp.61-62, Kanagawa, Japan, 2006/11
  • Low-temperature crystallization of amorphous silicon by atmospheric-pressure plasma treatment in H2/He or H2/Ar mixture, Hiromasa Ohmi,Hiroaki Kakiuchi,Kenichi Nishijima,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 10 B, p. 8488-8493, 2006/10/21
  • Low-temperature growth of epitaxial Si films by atmospheric pressure plasma chemical vapor deposition using porous carbon electrode, Hiromasa Ohmi,Hiroaki Kakiuchi,Naotaka Tawara,Takuya Wakamiya,Takayoshi Shimura,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 10 B, p. 8424-8429, 2006/10/21
  • The Origin of Long-range Contrast in Hf-silicate Films Observed by Scanning Capacitance Microscopy, Y. Naitou,A. Ando,H. Ogiso,S. Kamiyama,Y. Nara,H. Watanabe,K. Yasutake, Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006, 2006/10
  • Systematic Study on Effective Work Functions for Poly-Si and Fully Silicided NiSi Electrodes on Hf-based Gate Dielectrics, K. Manabe,T. Hase,T. Tatsumi,H. Watanabe,K. Yasutake, Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006, 2006/10
  • PVD-based In-situ Fabrication Method for Improving the Electrical Properties of Metal/High-k Gate Stacks, S. Horie,T. Minami,N. Kitano,M. Kosuda,H. Watanabe,K. Yasutake, Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006, 2006/10
  • Oxidation Rate Diminidhment of SiGe Epitaxial Films on Silicon-on-insulator Wafers, S. Horiuchi,M. Shimizu,T. Shimura,H. Watanabe,K. Yasutake, 2006/10
  • Interface Reactions at TiN/HfSiON Gate Stacks Depending on the Electrode Structure and Deposition Method, S. Yoshida,Y. Watanabe,Y. Kita,T. Shimura,H. Watanabe,K. Yasutake,Y. Akasaka,Y. Nara,K. Yamada, 2006/10
  • High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma, M. Harada,H. Kakiuchi,H. Ohmi,H. Watanabe,K. Yasutake, Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006, 2006/10
  • Fabrication of Polycrystalline Thin Films on Glass Substrates Using Ge Nano-Islands and Nuclei, K. Minami,C. Yoshimoto,H. Ohmi,T. Shimura,H. Kakiuchi,H. Watanabe,K. Yasutake, Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006, 2006/10
  • Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vappor Deposition, N. Tawara,H. Ohmi,Y. Terai,T. Shimura,H. Kakiuchi,H. Watanabe,Y. Fujiwara,K. Yasutake, Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006, 2006/10
  • Atomospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode, M. Harada,H. Ohmi,H. Kakiuchi,H. Watanabe,K. Yasutake, Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006, 2006/10
  • Structural Change of the Thermal Oxide Layer on Si Substrates by Diffusion of Atomic Oxygen, Takayoshi Shimura,Eiji Mishima,Kohta Kawamura,Heiji Watanabe,Kiyoshi Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, 2006/10
  • Oxidation Rate Diminishment of SiGe Epitaxial Films on Silicon-on-insulator Wafers, S. Horiuchi,M. Shimizu,T. Shimura,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.155-156, Osaka, Japan., 2006/10
  • The Origin of Long-range Contrast in Hf-silicate Films Observed by Scanning Capacitance Microscopy, Y. Naitou,A. Ando,H. Ogiso,S. Kamiyama,Y. Nara,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.153-154, Osaka, Japan., 2006/10
  • Systematic Study on Effective Work Functions for Poly-Si and Fully Silicided NiSi Electrodes on Hf-based Gate Dielectrics, K. Manabe,T. Hase,T. Tatsumi,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.151-152, Osaka, Japan., 2006/10
  • PVD-based In-situ Fabrication Method for Improving the Electrical Properties of Metal/High-k Gate Stacks, S. Horie,T. Minami,N. Kitano,M. Kosuda,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.149-150, Osaka, Japan., 2006/10
  • Interface Reactions at TiN/HfSiON Gate Stacks Depending on the Electrode Structure and Deposition Method, S. Yoshida,Y. Watanabe,Y. Kita,T. Shimura,H. Watanabe,K. Yasutake,Y. Akasaka,Y. Nara,K. Yamada, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.147-148, Osaka, Japan., 2006/10
  • High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma, M. Harada,H. Kakiuchi,H. Ohmi,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.78-79, Osaka, Japan., 2006/10
  • Atmospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode, M. Harada,H. Ohmi,H. Kakiuchi,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.75-76, Osaka, Japan., 2006/10
  • Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition, N. Tawara,H. Ohmi,Y. Terai,T. Shimura,H. Kakiuchi,H. Watanabe,Y. Fujiwara,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan., 2006/10
  • Fabrication of Polycrystalline Thin Films on Glass Substrates Using Ge Nano-Islands and Nuclei, K. Minami,C. Yoshimoto,H. Ohmi,T. Shimura,H. Kakiuchi,H. Watanabe,K. Yasutake, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.65-66, Osaka, Japan., 2006/10
  • Dopant Concentration Influence on Scanning Capacitance Microscopy Imaging in Ultrathin SiO2 Films, Y. Naitou,A. Ando,H. Ogiso,H. Watanabe,K. Yasutake, Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices –Science and Technology-, pp.21-22, Kanagawa, Japan, 2006/10
  • Characterization of metal/high-k structures using a monoenergetic positron beam, A. Uedono,T. Naito,T. Otsuka,K. Shiraishi,K. Yamabe,S. Miyazaki,H. Watanabe,N. Umezawa,T. Chikyow,Y. Akasaka,S. Kamiyama,Y. Nara,K. Yamada, Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices –Science and Technology-, pp.51-52, Kanagawa, Japan, 2006/10
  • Oxidation process of HfO2/SiO2/Si structures observed by high-resolution RBS, Z. Ming,K. Nakajima,M. Suzuki,K. Kimura,M. Uematsu,K. Torii,S. Kamiyama,Y. Nara,H. Watanabe,K. Shiraishi,T. Chikyow,K. Yamada, International Conference on Solid-State and Integrated-Circuit Technology, Shanghai, China, 2006, 2006/10
  • Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates, K. Yasutake,H. Watanabe,H. Ohmi,H. Kakiuchi, Meeting Abst. MA2006-02 Joint Int. Meeting of 210th Meeting of The Electrochemical Society and XXI Congreso de la Sociedad Mexicana de Electroquimica, Oct. 29-Nov. 3, 2006. Cancun, Mexico, (2006) #1575., The Electrochemical Society, 2006/10
  • Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation, A. Uedono,T. Naito,T. Otsuka,K. Shiraishi,K. Yamabe,S. Miyazaki,H. Watanabe,N. Umezawa,T. Chikyow,Y. Akasaka,S. Kamiyama,Y. Nara,K. Yamada, Journal of Applied Physics, AIP Publishing, Vol. 100, No. 6, p. 064501-064501, 2006/09/15
  • High-resolution RBS analysis of Si-dielectric interfaces, Z. Ming,K. Nakajima,M. Suzuki,K. Kimura,M. Uematsu,K. Torii,S. Kamiyama,Y. Nara,H. Watanabe,K. Shiraishi,T. Chikyow,K. Yamada, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.380-381., 2006/09
  • Spatial Fluctuation of Electrical Properties in Hf-Silicate Film Observed with Scanning Capacitance Microscopy, Y. Naitou,A. Ando,H. Ogiso,S. Kamiyama,Y. Nara,H. Watanabe,K. Yasutake, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.392-393., 2006/09
  • Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks, S. Horie,T. Minami,N. Kitano,M. Kosuda,H. Watanabe,K. Yasutake, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.414-415., 2006/09
  • Low-Leakage-Current Ultra-thin SiO2 Films by Low-Temperature Neutral Beam Oxidation, T. Ikoma,C. Taniguchi,S. Fukuda,K. Endo,H. Watanabe,S. Samukawa, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.448-449., 2006/09
  • Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃), N. Tawara,H. Ohmi,Y. Terai,H. Kakiuchi,H. Watanabe,Y. Fujiwara,K. Yasutake, Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095., 2006/09
  • Sample Tilting Technique for Preventing Electrostatic Discharge during High-current FIB Gas-assisted Etching with XeF2, H. Komoda,C. Moritani,K. Takahashi,H. Watanabe,K. Yasutake, Microelectronics Reliability (in press, online 19 June), 2006/06
  • Novel Charge Neutralization Techniques Applicable to Wide Current Rage of FIB Processing in FIB-EB Combined System, H. Komoda,M. Yoshida,Y. Yamamoto,K. Iwasaki,I. Nakatani,H. Watanabe,K. Yasutake, Microelectronics Reliability (in press, online June 5), 2006/06
  • Sub-1nm EOT HfSix/HfO2 Gate Stack Using Novel Si Extrusion Process for High Performance Application, T. Ando,T. Hirano,K. Tai,S. Yamaguchi,T. Kato,Y. Hagimoto,K. Watanabe,R. Yamamoto,S. Kanda,K. Nagano,S. Terauchi,Y. Tateshita,Y. Tagawa,M. Saito,H. Iwamoto,S. Yoshida,H. Watanabe,N. Nagashima,S. Kadomura, Digest of Technical Papers 2006 Symposium on VLSI Technilogy, 2006/06
  • Mechanism of Fermi-Level Pinning for n-like Metal Silicides on Hf-based Gate Dielectrics, K. Shiraishi,H. Takeuchi,Y. Akasaka,H. Watanabe,N. Umezawa,T. Chikyow,Y. Nara,T.-J. King Liu,K. Yamada, Proceedings of 2006 IEEE Si Nanoelectronics Workshop, 2006/06
  • Extensive Studies for Effects of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics, N. Umezawa,K. Shiraishi,H. Watanabe,K. Torii,Y. Akasaka,S. Inumiya,M. Boero,A. Uedono,S. Miyazaki,T. Ohno,T. Chikyow,K. Yamabe,Y. Nara,K. Yamada, ETS Trans., 2006/05
  • New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces -Application to Metal/High-k HfO2 and La2O3 Dielectric Interfaces- (INVITED), K. Shiraishi,T. Nakayama,Y. Akasaka,S. Miyazaki,T. Nakaoka,K. Ohmori,P. Ahmet,K. Torii,H. Watanabe,T. Chikyow,Y. Nara,H. Iwai,K. Yamada, 209th Electrochemical Society Meeting, 2006, Denver, 2006/05
  • Extensive Studies for the Effect of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics (INVITED), N. Umezawa,K. Shiraishi,H. Watanabe,K. Torii,Y. Akasaka,S. Inumiya,M. Boero,A. Uedono,S. Miyazaki,T. Ohno,T. Chikyow,K. Yamabe,Y. Nara,K. Yamada, 209th Electrochemical Society Meeting, 2006, Denver, 2006/05
  • Characterization of epitaxial si films grown by atmospheric pressure plasma chemical vapor deposition using cylindrical rotary electrode, Kiyoshi Yasutake,Hiromasa Ohmi,Hiroaki Kakiuchi,Takuya Wakamiya,Heiji Watanabe, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, p. 3592-3597, 2006/04/25
  • Thermal degradation of HfSiON dielectrics caused by TiN gate electrodes and its impact on electrical properties, Heiji Watanabe,Shiniti Yoshida,Yasumasa Watanabe,Takayoshi Shimura,Kiyoshi Yasutake,Yasushi Akasaka,Yasuo Nara,Kunio Nakamura,Keisaku Yamada, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, p. 2933-2938, 2006/04/25
  • Analysis of origin of threshold voltage change induced by impurity in fully silicided NiSi/SiO2 gate stacks, Kenzo Manabe,Kensuke Takahashi,Takashi Hase,Nobuyuki Ikarashi,Makiko Oshida,Toru Tatsumi,Hirohito Watanabe,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, p. 2919-2924, 2006/04/25
  • Unique behavior of F-centers in high-k Hf-based oxides, N. Umezawa,K. Shiraishi,T. Ohno,M. Boero,H. Watanabe,T. Chikyow,K. Torii,K. Yamabe,K. Yamada,Y. Nara, Physica B: Condensed Matter, Elsevier BV, Vol. 376-377, p. 392-394, 2006/04
  • Application of Synchrotron X-ray Diffraction Methods to Thin Film Materials used in Semiconductor Devices, Takayoshi Shimura,Eiji Mishima,Heiji Watanabe,Kiyoshi Yasutake, Extended Abstract of International Meeting for Future of Electron Devices, Kansai, 2006/04
  • A new theory of the Schottky barrier heights at metal/metal oxide interfaces based on the first principles calculations (INVITED), K. Shiraishi,T. Nakayama,Y. Akasaka,S. Miyazaki,T. Nakaoka,K. Ohmori,P. Ahmet,K. Torii,H. Watanabe,T. Chikyow,Y. Nara,H. Iwai,K. Yamada, Abstracts of Computational Science Workshop, 2006/04
  • Surface Cleaning and Etching of 4H-SiC(0001) using Atmospheric Pressure Hydrogen Plasma, Heiji Watanabe,Shigenari Okada,Hiromasa Ohmi,Hiroaki Kakiuchi,Kiyoshi Yasutake, Materials Research Society (MRS) Spring Meeting, 2006, San Francisco, CA., 2006/04
  • Novel Charge Neutralization Techniques Applicable to Wide Current Range of FIB Processing in FIB-SEM Combined System, Hirotaka Komoda,Masaaki Yoshida,Yoh Yamamoto,Kouji Iwasaki,Ikuko Nakatani,Heiji Watanabe,Kiyoshi Yasutake, Microelectronics ReliabilityJournal (in press)., 2006/04
  • Theoretical Investigation of the Interface between Hf-based High-k Dielectrics and Poly-Si and Metal gates (INVITED), K. Shiraishi,T. Nakayama,Y. Akasaka,S. Miyazaki,T. Nakaoka,K. Ohmori,P. Ahmet,K. Torii,H. Watanabe,T. Chikyow,Y. Nara,K. Yamada, ECS-SEMI International Semiconductor Technology Conference, 2006, Shanghai., 2006/03
  • Residual Order in Thermal Oxide Layers and Its applicatioin to the Study of Interface Reaction, T. Shimura,E. Mishima,H. Watanabe,K. Yasutake,M. Umeno,K. Tatsumura,T. Watanabe,I. Ohdomaroi, 2006/02
  • メタル電極形成条件がMetal/HfSiON界面反応と電気特性に及ぼす影響, 吉田慎一,渡辺康匡,喜多祐起,志村考功,渡部平司,安武潔,赤坂泰志,奈良安雄,白石賢二,山田啓作, ゲートスタック研究会-材料・プロセス・評価の物理-(第11回研究会), 2006/02
  • NiSiフルシリサイド/SiO2ゲートスタックにおける不純物によるしきい値変化メカニズム, 間部謙三,長谷卓,五十嵐信行,忍田真希子,辰巳徹,渡部平司,安武潔,渡辺啓仁, ゲートスタック研究会-材料・プロセス・評価の物理-(第11回研究会), 2006/02
  • Ⅶ、ⅧおよびⅠB族金属材料のpMOS用メタルゲート適用検討, 中村源治志,赤坂泰志,渡部平司,大塚文雄,奈良安雄, ゲートスタック研究会-材料・プロセス・評価の物理-, 2006/02
  • 走査型容量顕微鏡によるHf系ゲート絶縁膜の誘電特性の空間分布, 内藤裕一,安藤敦,小木曽久人,神山聡,奈良安雄,中村邦雄,渡部平司,安武潔, ゲートスタック研究会-材料・プロセス・評価の物理-(第11回研究会), 2006/02
  • 酸素中性ビーム粒子を用いた極薄酸化膜の形成, 田口智啓,生駒篤亨,福田誠一,遠藤和彦,渡部平司,寒川誠二, ゲートスタック研究会-材料・プロセス・評価の物理-(第11回研究会), 2006/02
  • 金属電極/High-k絶縁膜キャパシタのフラットバンド電圧特性に与える仕事関数変調及び熱処理の影響, 大毛利健治,Parhat Ahmet,白石賢二,渡部平司,赤坂泰志,山部紀久夫,吉武道子,K.-S. Chang,M.L.Green,山田啓作,知京豊裕, ゲートスタック研究会-材料・プロセス・評価の物理-(第11回研究会), 2006/02
  • Physics of metal/high-k interfaces, Takashi Nakayama,Kenji Shiraishi,Seiichi Miyazaki,Yasushi Akasaka,Takashi Nakaoka,Kazuyoshi Torii,Akio Ohta,Parhat Ahmet,Kenji Ohmori,Naoto Umezawa,Heiji Watanabe,Toyohiro Chikyow,Yasuo Nara,Hiroshi Iwai,Keisaku Yamada, ECS Transactions, Vol. 3, No. 3, p. 129-140, 2006
  • Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -, K. Ohmori,P. Ahmet,K. Shiraishi,K. Yamabe,H. Watanabe,Y. Akasaka,N. Umezawa,K. Nakajima,M. Yoshitake,T. Nakayama,K. S. Chang,K. Kakushima,Y. Nara,M. L. Green,H. Iwai,K. Yamada,T. Chikyow, ECS Transactions, Vol. 3, No. 3, p. 351-362, 2006
  • Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers, Takayoshi Shimura,Michihiro Shimizu,Shinichiro Horiuchi,Heiji Watanabe,Kiyoshi Yasutake,Masataka Umeno, Applied Physics Letters, Vol. 89, No. 11, 2006
  • Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers, Takayoshi Shimura,Michihiro Shimizu,Shinichiro Horiuchi,Heiji Watanabe,Kiyoshi Yasutake,Masataka Umeno, Applied Physics Letters, Vol. 89, No. 11, 2006
  • Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -, K. Ohmori,P. Ahmet,K. Shiraishi,K. Yamabe,H. Watanabe,Y. Akasaka,N. Umezawa,K. Nakajima,M. Yoshitake,T. Nakayama,K. S. Chang,K. Kakushima,Y. Nara,M. L. Green,H. Iwai,K. Yamada,T. Chikyow, ECS Transactions, Vol. 3, No. 3, p. 351-362, 2006
  • Physics of metal/high-k interfaces, Takashi Nakayama,Kenji Shiraishi,Seiichi Miyazaki,Yasushi Akasaka,Takashi Nakaoka,Kazuyoshi Torii,Akio Ohta,Parhat Ahmet,Kenji Ohmori,Naoto Umezawa,Heiji Watanabe,Toyohiro Chikyow,Yasuo Nara,Hiroshi Iwai,Keisaku Yamada, ECS Transactions, Vol. 3, No. 3, p. 129-140, 2006
  • Ge nuclei for fabrication of poly-Si thin films on glass substrates, K. Yasutake,H. Watanabe,H. Ohmi,H. Kakiuchi, ECS Transactions, Vol. 3, No. 8, p. 215-225, 2006
  • Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers, Takayoshi Shimura,Michihiro Shimizu,Shinichiro Horiuchi,Heiji Watanabe,Kiyoshi Yasutake,Masataka Umeno, Applied Physics Letters, Vol. 89, No. 11, 2006
  • Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -, K. Ohmori,P. Ahmet,K. Shiraishi,K. Yamabe,H. Watanabe,Y. Akasaka,N. Umezawa,K. Nakajima,M. Yoshitake,T. Nakayama,K. S. Chang,K. Kakushima,Y. Nara,M. L. Green,H. Iwai,K. Yamada,T. Chikyow, ECS Transactions, Vol. 3, No. 3, p. 351-362, 2006
  • Low-temperature Growth of Epitaxial Silicon films by Atmospheric Pressure Plasma Chemical Vapor Deposition, Hiromasa Ohmi,Hiroaki Kakiuchi,Naotaka Tawara,Takuya Wakamiya,Takayoshi Shimura,Heiji Watanabe,Kiyoshi Yasutake, Proceedings of the 6th ICRP and 23rd SPP, 2006/01
  • Characterization of high pressure (200-760Torr), stable glow plasma of pure hydrogen by measuring etching properties of Si and optical emission spectroscopy, Hiromasa Ohmi,Hiroaki Kakiuchi,Yoshiki Ogiyama,Heiji Watanabe,Kiyoshi Yasutake, Proceedings of the 6th ICRP and 23rd SPP, 2006/01
  • low temperature crystallization of amorphous silicon by atmospheric pressure plasma treatment in H2/He or H2/Ar mixtures, Hiromasa Ohmi,Hiroaki Kakiuchi,Kenichi Nishijima,Heiji Watanabe,Kiyoshi Yasutake, Proceedings of the 6th ICRP an 23rd SPP, 2006/01
  • 金属/Hf系高誘電率絶縁膜界面の統一理論 -ゲート金属の設計指針-, 白石賢二,赤坂泰志,宮崎誠一,中山隆史,中岡高司,中村源治,鳥居和功,太田晃生,Parhat Ahmet,大毛利健治,渡部平司,知京豊裕,Martin Green,奈良安雄,山田啓作, 応用物理学会シリコンテクノロジー分科会研究集会 兼 電子情報通信学会シリコンデバイス・材料研究会, 2006/01
  • Influences of Annealing Conditions on Flatband Voltage Properties Using Continuously, Kenji Ohmmori,Parhat Ahmet,Kenji Shiraishi,Heiji Watanabe,Yasushi Akasaka,Kikuo Yamabe,King,S. Chang,Martin G. Green,Keisaku Yamada,Toyohiro Chikyow, International Workshop on Nano CMOS, 2006, Mishima, Shizuoka., 2006/01
  • New findings in nano-scale interface physics and their relations to nano-CMOS technologies, K. Shiraishi,Y. Akasaka,K. Torii,T. Nakayama,S. Miyazaki,T. Nakaoka,H. Watanabe,K. Ohmori,P. Ahmet,T. Chikyow,Y. Nara,K. Yamada, 2006 International Workshop on Nano CMOS - Proceedings, IWNC, p. 180-208, 2006
  • Universal theory of Workfunctions at Metal/Hf-based High-k Dielectrics Interfaces -Guiding principles for gate metal selection-, K. Shiraishi,Y. Akasaka,S. Miyazaki,T. Nakayama,T. Nakaoka,G. Nakamura,K. Torii,H. Furutou,A. Ohta,P. Ahmet,K. Ohmori,H. Watanabe,T. Chikyow,M. L. Green,Y. Nara,K. Yamada, Technical Digest of International Electron Devices Meeting, 2005, Washington DC, pp.2.5.1-4., 2005/12
  • Influence of Continuous Work Function Variation on Electric Properties by Combinatorial Materials Deposition Method, K. Ohmori,P. Ahmet,D. Kukuruznyak,T. Nagata,K. Nakajima,K. Shiraishi,K. Yamabe,H. Watanabe,K. Yamada,G. Richter,T. Wagner,C. Chang,M. Green,T. Chikyow, Abstracts of 36th IEEE Semiconductor Interface Specialists Conference, 2005, Arlington, VA., 2005/12
  • Effects of Intrinsic and Extrinsic Reactions at Metal/High-k Interfaces on Electrical Properties of Gate Stacks, H. Watanabe,S. Yoshida,Y. Watanabe,E. Mishima,K. Kawamura,Y. Kita,T. Shimura,K. Yasutake,Y. Akasaka,Y. Nara,K. Shiraishi,K. Yamada, Abstracts of 36th IEEE Semiconductor Interface Specialists Conference, 2005, Arlington, VA., 2005/12
  • Antistatic technique for suppressing charging in focused ion beam systems using microprobing and ion-beam-assisted deposition, Hirotaka Komoda,Ikuko Nakatani,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 11, p. 7907-7909, 2005/11/09
  • Mapping of the local dielectric properties of Hf-based high-k films by scanning capacitance microscopy, Y. Naitou,A. Ando,H. Ogiso,S. Kamiyama,Y. Nara,K. Nakamura,H. Watanabe,K. Yasutake, Abstracts of International Symposium on Surface Science and Nanotechnology, p.133., 2005/11
  • 次世代MOSFETゲート絶縁膜のナノスケール評価と新プロセス提案, 渡部平司, 第9回関西半導体解析技術研究会, 2005/11
  • シリコン系薄膜の大気圧プラズマCVDおよびエピタキシャル成長, 安武潔,垣内弘章,大参宏昌,渡部平司, 薄膜材料デバイス研究会第2回研究集会「低温プロセスの再発見」アブストラクト集(2005), 2005/11
  • Ordered Structure in the Thermal Oxide Layer on Silicon Substrates, Takayoshi Shimura,Eiji Mishima,Heiji Watanabe,Kiyoshi Yasutake,Masataka Umeno,Kousuke Tatsumura,Takanobu Watanabe,Iwao Ohdomari,Keisaku Yamada,Satoshi Kamiyama,Yasushi Akasaka,Yasuo Nara,Kunio Nakamura, Physics and Chemistry of SiO$_2$ and the Si-SiO$_2$ Interface 5, 2005/10
  • High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmoshperis Pressure Plasma CVD, Takuya Wakamiya,Hiromasa Ohmi,Hiroaki Kakiuchi,Heiji Watanabe,Kiyoshi Yasutake,Kumayasu Yoshii,Yuso Mori, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, 2005/09
  • Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties, Heiji Watanabe,Shiniti Yoshida,Yasumasa Watanabe,Takayoshi Shimura,Kiyoshi Yasutake,Yasushi Akasaka,Yasuo Nara,Kunio Nakamura,Keisaku Yamada, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, Vol. 45, No. 4, p. 2933-2938, 2005/09
  • 高誘電率ゲート絶縁膜開発の現状, 渡部平司, 生産と技術, 2005/07
  • Negative-U Behavior in the Complex of an O Vacancy and a Metal Impurity in High-k Dielectrics HfO2, K. Shiraishi,T. Nakayama,S. Miyazaki,K.Torii,Y. Akasaka,H. Watanabe,T. Chikyow,K. Yamada,Y. Nara, The 23rd International Conference on Defects in Semiconductors, 2005/07
  • Unique Behavior of F-Centers in High-k Hf-based Oxides, Naoto Umezawa,Kenji Shiraishi,Takahisa Ohno,Mauro Boero,Heiji Watanabe,Toyohiro Chikyow,Kazuyoshi Torii,Kikuo Yamabe,Keisaku Yamada,Yasuo Nara, The 23rd International Conference on Defects in Semiconductors, 2005/07
  • First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics, N. Umezawa,K. Shiraishi,T. Ohno,H. Watanabe,T. Chikyow,K. Torii,K. Yamabe,K. Yamada,H. Kitajima,T. Arikado, Applied Physics Letters, AIP Publishing, Vol. 86, No. 14, p. 143507-143507, 2005/04/04
  • High-mobility dual metal gate MOS transistors with high-k gate dielectrics, Kensuke Takahashi,Kenzo Manabe,Ayuka Morioka,Taeko Ikarashi,Takuya Yoshihara,Heiji Watanabe,Toru Tatsumi, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, p. 2210-2213, 2005/04
  • Fully silicided NiSi gate electrodes on HfSiON gate dielectrics for low-power applications, Kenzo Manabe,Kensuke Takahashi,Taeko Ikarashi,Ayuka Morioka,Heiji Watanabe,Takuya Yoshihara,Toru Tatsumi, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, p. 2205-2209, 2005/04
  • 1.2 nm HfSiON/SiON stacked gate insulators for 65-nm-Node MISFETs, Motofumi Saitoh,Masayuki Terai,Nobuyuki Ikarashi,Heiji Watanabe,Shinji Fujieda,Toshiyuki Iwamoto,Takashi Ogura,Ayuka Morioka,Koji Watanabe,Toru Tatsumi,Hirohito Watanabe, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, p. 2330-2335, 2005/04
  • Intrinsic Effect of a Nitrogen Atom on Hf-based High-k Gate Dielectrics -A First Principles Study-, Naoto Umezawa,Kenji Shiraishi,Takahisa Ohno,Heiji Watanabe,Toyohiro Chikyow,Kazuyoshi Torii,Kikuo Yamabe,Keisaku Yamada,Hiroshi Kitajima,Tsunetoshi Arikado, American Physical Society (APS) March Meeting 2005, 2005/03
  • Formation of Crystalline Ge Islands on Glass Substratesfor Growth of Large-Grained Polycrystalline Si Thin Films, K. Yasutake,H. Watanabe,H. Ohmi,H. Kakiuchi,S. Koyama,D. Nakajima,K. Minami, Proceedings of Thin Film Materials & Devices Meeting, Nov.12-13, 2004, Nara-Shi Asunara Conference Hall, pp.19-24, 2005/02
  • Spatial fluctuation of dielectric properties in Hf-based high- k gate films studied by scanning capacitance microscopy, Y. Naitou,A. Ando,H. Ogiso,S. Kamiyama,Y. Nara,K. Nakamura,H. Watanabe,K. Yasutake, Applied Physics Letters, Vol. 87, No. 25, p. 1-3, 2005
  • Role of nitrogen incorporation into Hf-based high-&amp; gate dielectrics for termination of local current leakage paths, Heiji Watanabe,Satoshi Kamiyama,Naoto Umezawa,Kenji Shiraishi,Shiniti Yoshida,Yasumasa Watanabe,Tsunetoshi Arikado,Toyohiro Chikyow,Keisaku Yamada,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 42-45, p. L1333-L1336, 2005
  • The role of nitrogen incorporation in Hf-based high-k dielectrics: Reduction in electron charge traps, Naoto Umezawa,Kenji Shiraishi,Kazuyoshi Torii,Mauro Boero,Toyohiro Chikyow,Heiji Watanabe,Kikuo Yamabe,Takahisa Ohno,Keisaku Yamada,Yasuo Nara, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, Vol. 2005, p. 201-204, 2005
  • Charge neutralization using focused 500 eV electron beam in focused ion beam system, Hirotaka Komoda,Masaaki Yoshida,Yoh Yamamoto,Kouji Iwasaki,Heiji Watanabe,Kiyoshi Yasutake, Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 16-19, p. L515-L517, 2005
  • HfSiON膜中の局所絶縁劣化箇所のC-AFM観測-窒化による信頼性向上メカニズムの検討-, 渡辺康匡,志村考功,渡部平司,安武潔,神山聡,有門経敏,白石賢二,梅澤直人,知京豊裕,山田啓作, ゲートスタック研究会(第10回特別研究会)講演予稿集 p.327-331., 2005/01
  • コンビナトリアル成膜Pt-Wメタルゲート電極の仕事関数マッピング, 吉田慎一,渡部平司,安武潔,Ahmet Parhat,知京豊裕,山田啓作, ゲートスタック研究会(第10回特別研究会)講演予稿集 p.271-274., 2005/01
  • ニッケルフルシリサイド電極のHfSiONゲート絶縁膜への適用, 間部謙三,高橋健介,五十嵐多恵子,森岡あゆ香,渡部平司,辰巳徹, ゲートスタック研究会(第10回特別研究会)講演予稿集 p.231-236., 2005/01
  • デュアルメタル電極/HfSiOゲート絶縁膜MOSトランジスタの作製と電気特性の評価, 高橋健介,間部謙三,森岡あゆ香,五十嵐多恵子,吉原拓也,渡部平司,辰巳徹, ゲートスタック研究会(第10回特別研究会)講演予稿集 p.221-225., 2005/01
  • Hfを基礎としたHigh-kゲート絶縁膜のリーク電流を減少させるN原子の本質的な効果:酸素原子空孔に起因するリークパスを遮断するN原子の役割, 梅澤直人,白石賢二,大野隆央,渡部平司,知京豊裕,鳥居和功,山部紀久夫,山田啓作,北島洋,有門経敏, ゲートスタック研究会(第10回特別研究会)講演予稿集 p.115-119., 2005/01
  • 高誘電率(High-k)膜形成技術の現状と今後の展望, 渡部平司, 第4回インテリジェント・ナノプロセス研究会予稿原稿p.47-55., 2004/12
  • Dual Workfunction Ni-Silicide/HfSiON Gate Stacks by Phase-Controlled Full-Silicidation (PC-FUSI) Technique for 45nm-node LSTP and LOP Devices, K. Takahashi,K. Manabe,T. Ikarashi,N. Ikarashi,T. Hase,T. Yoshihara,H. Watanabe,T. Tatsumi,Y. Mochizuki, Technical Digest of International Electron Devices Meeting, San Francisco, CA, 2004/12
  • Intrinsic Effects of a Nitrogen Atom for Reduction in Leakage Current through Hf-based High-k Gate Dielectrics -Nitrogen Induced Atomistic Cutoff of O Vacancy Mediated Leakage Paths-, N. Umezawa,K. Shiraishi,T. Ohno,H. Watanabe,T. Chikow,K. Torii,K. Yamabe,K. Yamada,H. Kitajima,T. Arikado, Extended Abstracts of 35th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, 2004/12
  • Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching, Kiyoshi YASUTAKE,Hiromasa OHMI,Hiroaki KAKIUCHI,HeijiWATANABE,Kumayasu YOSHII,Yuzo MORI, Jpn. J. Appl. Phys. Vol.43 (2004) No.12A pp.L1552-L1554, 2004/12
  • Origin of flatband voltage shift in poly-Si/Hf-bsed high-k gate dielectrics and flatband voltage dependence on gate stack structure, Makoto Miyamura,Koji Masuzaki,Heiji Watanabe,Nobuyuki Ikarashi,Toru Tatsumi, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 11 B, p. 7843-7847, 2004/11
  • 大粒径多結晶Si薄膜作製のためのGe微結晶核を利用した基板表面制御, 小山晋,中嶋大貴,南綱介,大参宏昌,渡部平司,安武潔,森勇藏, 薄膜材料デバイス研究会第1回研究会「TFTのすべて」アブストラクト集(2004) p.36, p.67, 2004/11
  • Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application, Kenzo Manabe,Kensuke Takahashi,Ayuka Morioka,Heiji Watanabe,Takuya Yoshihara,Toru Tatsumi, Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2004, Tokyo, pp.18-19., 2004/09
  • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65nm-node MISFETs, Motofumi Saitoh,Nobuyuki Ikarashi,Heiji Watanabe,Shinji Fujieda,Hirohito Watanabe,Toshiyuki Iwamoto,Ayuka Morioka,Takashi Ogura,Masayuki Terai,Koji Watanabe,Makoto Miyamura,Toru Tataumi,Taeko Ikarashi,Koji Masuzaki,Yukishige Saito,Yuko Yabe, Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2004, Tokyo, pp.38-39., 2004/09
  • High Mobility Dual Metal Gate MOS Transisotrs with High-k Gate Dielectrics, Kensuke Takahashi,Kenzo Manabe,Ayuka Morioka,Taeko Ikarashi,Takuya Yoshihara,Heiji Watanabe,Toru Tatsumi, Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2004, Tokyo, pp.22-23., 2004/09
  • A 65nm-node LSTP (Low Standby Power) Poly-Si/a-Si/HfSiON Transistor with High Ion-Istandby Ratio and Reliability, Y. Yasuda,N. Kimizuka,T. Iwamoto,S. Fujieda,T. Ogura,H. Watanabe,T. Tatsumi,I. Yamamoto,K. Ito,H. Watanabe,Y. Yamagata,K. Imai, Tech. Digest Symposium on VLSI Technology, 2004, Hawaii, pp.40-41., 2004/06
  • High-Quality HfSiO Gate Dielectrics Fabricated by Solid Phase Interface Reaction Between Physical-Vapor-Deposited Metal-Hf and SiO2 Underlayer, Heiji Watanabe,Motofumi Saito,Nobuyuki Ikarashi,Toru Tatsumi, Appl. Phys. Lett. 85 (2004) 449-451., 2004/06
  • Origin of Flatband Voltage Shift in Poly-Si/Hf-based High-k Gate Dielectrics and Vfb Dependence on Gate Stack Structure, Makoto Miyamura,Masakazu Masuzaki,Heiji Watanabe,Nobuyuki Ikarashi,Toru Tatsumi, Ext. Abst. of International Workshop on Dielectric Thin Films for Future ULIS Devices - Science and Technology, 2004, Tokyo, pp.13-14., 2004/05
  • High Quality HfSixOy Gate Dielectrics Fabricated by Solid Phase Reaction Between Metal Hf and SiO2 Underlayer, Heiji Watanabe,Motofumi Saitoh,Nobuyuki Ikarashi,Toru Tatsumi, Abst. of Material Research Society Spring Meeting, 2004, San Francisco, pp.101., 2004/04
  • A Highly Manufacturable Low Power and High Speed HfSiO CMOS FET with Dual Poly-Si Gate Electrodes, Toshiyuki Iwamoto,Takashi Ogura,Masayuki Terai,Hirohiro Watanabe,Heiji Watanabe,Nobuyuki Ikarashi,Makoto Miyamura,Toru Tatsumi,Motofumi Saitoh,Ayuka Morioka,Koji Watanabe,Yukishige Saito,Yuko Yabe,Taeko Ikarashi,Koji Masuzaki,Yukinori Mochizumi,Tohru Mogami, Tech. Digest Int. Electron Devices Meeting, 2003, Washington DC, pp.639-642., 2003/12
  • Roughness at ZrO2/Si interfaces induced by accelerated oxidation due to the metal oxide overlayer, Heiji Watanabe, Applied Physics Letters, Vol. 83, No. 20, p. 4175-4177, 2003/11/17
  • La-silicate gate dielectrics fabricated by solid phase reaction between La metal and SiO2 underlayers, Heiji Watanabe,Nobuyuki Ikarashi,Fuminori Ito, Applied Physics Letters, Vol. 83, No. 17, p. 3546-3548, 2003/10/27
  • High Mobility MISFET with Low Trapped Charge in HfSiO Films, Ayuka Morioka,Hirohito Watanabe,Makoto Miyamura,Toru Tatsumi,Motofumi Saito,Takashi Ogura,Toshiyuki Iwamoto,Taeko Ikarashi,Yukishige Saito,Yuko Okada,Heiji Watanabe,Yasunori Mochizuki,Tohru Mogami, Tech. Digest Symposium on VLSI Technology, 2003, Kyoto, pp.165-166., 2003/01
  • Ultrathin zirconium silicate gate dielectrics with compositional gradation formed by self-organized reactions, Heiji Watanabe, Applied Physics Letters, Vol. 81, No. 22, p. 4221-4223, 2002/11/25
  • Ultrathin Zr Silicate Gate Dielectrics with Compositional Gradation, Heiji Watanabe, Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2002, Nagoya, pp.60-61., 2002/09
  • ZrO2/SiO2/Si界面制御とゲート絶縁膜への応用, 渡部平司, Proc. the 62nd Symposium on Semiconductors and Integrated Circuits Technology, 2002, Tokyo, pp.13-18., 2002/06
  • 2次電子像におけるSi(001)-2x1表面のドメインコントラストの起源, 渡部平司,市川昌和,川村隆明, 日本学術振興会第141委員会第107研究会資料、pp.46-51., 2002/03
  • Thermal decomposition of ZrO2/SiO2 bilayer on Si(001) caused by void nucleation and its lateral growth, Heiji Watanabe,Nobuyuki Ikarashi, Applied Physics Letters, Vol. 80, No. 4, p. 559-561, 2002/01/28
  • Thermal Decomposition of ZrO2/SiO2 Bilayer on Si(001), Heiji Watanabe, Proc. Int. Symposium on Atomic Level Characterization for New Materials and Devices, 2001, Nara, pp.367-370., 2001/11
  • Interfacial Reactions of ZrO2/SiO2/Si Layered Structures, Heiji Watanabe, Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2001, Tokyo, pp.492-493., 2001/09
  • Interface engineering of a ZrO2/SiO2/Si layered structure by in situ reoxidation and its oxygen-pressure-dependent thermal stability, Heiji Watanabe, Applied Physics Letters, Vol. 78, No. 24, p. 3803-3805, 2001/06/11
  • Dependence of Thermal Stability of ZrO2/SiO2/Si Layered Structure on Ambient Oxygen, Heiji Watanabe, Abst. Electronic Materials Conference, 2001, Indiana, pp.25., 2001/06
  • Origin of the Domain Contrast on a Si(001)-2x1 Surface Imaged by Secondary Electrons, Heiji Watanabe,Masakazu Ichikawa,Takaaki Kawamura, Appl. Phys. Lett. 78 (2001) 1255-1257., 2001/02
  • シリコン表面の原子層単位の酸化反応, 渡部平司,宮田典幸,市川昌和, 日本物理学会誌、2000年11月号、pp.846-853., Vol. 55, No. 11, p. 846-853, 2000/11
  • Initial Oxynitridation of a Si(001)-2x1 Surface by NO, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Material Research Society Fall Meeting, 2000, Boston MRS Sym. Proc. 592, pp.233-238., 2000/11
  • Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth, Heiji Watanabe,Naotaka Kuroda,Haruo Sunakawa,Akira Usui, Applied Physics Letters, American Institute of Physics Inc., Vol. 77, No. 12, p. 1786-1788, 2000/09/18
  • Selective growth of nanocrystalline Si dots using an ultrathin-Si-oxide/oxynitride mask, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Applied Physics Letters, American Institute of Physics Inc., Vol. 77, No. 11, p. 1620-1622, 2000/09/11
  • Crystallographic Structure of FIELO-GaN Films Studied by Scanning Reflection Electron Microscopy, Heiji Watanabe,Naotaka Kuroda,Haruo Sunakawa,Akita Usui, Proc. Int. Workshop on Nitride Semiconductors, 2000, Nagoya, pp.272-275., 2000/09
  • Initial Oxynitridation of a Si(001)-2x1 Surface by NO, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Appl. Phys. Lett. 76 (2000) 3561-3563., 2000/06
  • シリコン表面のLayer-by-layer酸化, 渡部平司,宮田典幸,市川昌和, 表面科学、2000年4月号、pp.32-37., Vol. 20, No. 4, p. 250-255, 2000/04
  • Mechanism of Layer-by-Layer Oxidation of Si(001) Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO2/Si Interfaces, Heiji Watanabe,Toshio Baba,Masakazu Ichikawa, Jpn. J. Appl. Phys. 39 (2000) 2015-202., 2000/04
  • Nanometer-Scale Characterization of Layer-by-Layer Oxidation of Si Surfaces, Heiji Watanabe,Noriyuki Miyata,Masakazu Ichikawa, Proc. 3rd SANKEN Int. Symposium on Advanced Nanoelectronics: Devices, Materials and Computing, 2000, Osaka, pp.120-121., 2000/03
  • Thermal decomposition of an ultrathin si oxide layer around a Si(001)- (2×1) window, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Physical Review Letters, Vol. 84, No. 5, p. 1043-1046, 2000/01/31
  • Scanning tunneling microscopy and spectroscopy characterization of ion-beam-induced dielectric degradation in ultrathin SiO2 films and its thermal recovery process, Heiji Watanabe,Toshio Baba,Masakazu Ichikawa, Journal of Applied Physics, American Institute of Physics Inc., Vol. 87, No. 1, p. 44-48, 2000/01/01
  • Nanometer-Scale Characterization of Layer-by-Layer Oxidation of Si Surfaces and Local Dielectric Properties of Ultrathin SiO2 Films (INVITED), Heiji Watanaeb,Toshio Baba,Masakazu Ichikw, International Symposium on Surface Science for Micro-and Nano-Devices Fabrication, 1999, Tokyo., 1999/11
  • Layer-by-Layer Oxidation of Silicon Surfaces, Heiji Watanabe,Noriyuki Miyata,Masakazu Ichikawa, Material Research Society Spring Meeting, 1999, San Francisco, MRS Sym. Proc. 567, pp.189-200., 1999/11
  • Initial Oxynitridation of Si(001)-2x1 Surface by Nitric Oxide: Interfacial Structure and Application for Si Selective Growth, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1999, Tokyo, pp.151-154., 1999/11
  • Local Dielectric Breakdown in Ultrathin SiO2 Films: Characterization by Scanning Tunneling Microscopy, Heiji Watanabe,Masakazu Ichikawa,Toshio Baba, NEC Research & Development 40 (1999) 410-413., 1999/10
  • Mechanism of Layer-by-Layer Oxidation of Si(001) Surfaces Proceeded by Two-Dimensional Oxide Island Nucleation at SiO2/Si Interfaces, Heiji Watanabe,Toshio Baba,Masakazu Ichikawa, Ext, Abst, Int. Conf. on Solid State Devices and Materials, 1999, Tokyo, pp.310-311., 1999/09
  • Nanometer-Scale Si-Selective Epitaxial Growth Using Ultrathin SiO2 Mask, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Abst. Int. Joint Conf. on Silicon Epitaxy and Heterostructures, 1999, Miyagi, B-, 1999/09
  • Nanometer-Scale Characterization of Electrical Degradation in Ultrathin SiO2 Films Using a Scanning Probe Technique, Heiji Watanabe,Toshio Baba,Masakazu Ichikawa, Proc. Int. Conf. on Production Engineering, 1999, Osaka, pp.865-870., 1999/08
  • Reflection high-energy electron diffraction intensity oscillation during layer-by-layer oxidation of Si(001) surfaces, Heiji Watanabe,Toshio Baba,Masakazu Ichikawa, Applied Physics Letters, American Institute of Physics Inc., Vol. 74, No. 22, p. 3284-3286, 1999/05/31
  • Nanometer-Scale Si-Selective Epitaxial Growth Using Ultrathin SiO2 Mask, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, J. Vac. Sci. Technol. B17 (1999) 978-982., 1999/05
  • Characterization of local dielectric breakdown in ultrathin SiO2 films using scanning tunneling microscopy and spectroscopy, Heiji Watanabe,Toshio Baba,Masakazu Ichikawa, Journal of Applied Physics, American Institute of Physics Inc., Vol. 85, No. 9, p. 6704-6710, 1999/05/01
  • Nanometer-Scale Si Selective Growth Using Ultrathin SiO2 Mask, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Material Research Society Fall Meeting, 1998, Boston., 1998/11
  • Nanometer-Scale Si Selective Epitaxial Growth Using Ultrathin SiO2 Mask, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1998, Tokyo, pp.143-146., 1998/11
  • Atomic-Scale Structure of SiO2/Si Interfaces Formed by Furnace Oxidation, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Phys. Rev. B58 (1998) 13670-13676., 1998/11
  • Nanometer Fabrication Using Selective Thermal Decomposition of SiO2 Induced by Focused Electron Beams and Electron Beam Interference Fringes, Shinobu Fujita,Shigemitsu Maruno,Heiji Watanabe,Masakazu Ichikawa, J. Vac. Sci. Technol. B16 (1998) 2817-2821., 1998/09
  • Scanning tunneling microscopy study on void formation by thermal decomposition of thin oxide layers on stepped Si surfaces, Ken Fujita,Heiji Watanabe,Masakazu Ichikawa, Journal of Applied Physics, American Institute of Physics Inc., Vol. 83, No. 8, p. 4091-4095, 1998/04/15
  • Scanning Tunneling Microscopy Study on the Surface and Interface of Si(111) / SiO2 Structures, Ken Fujita,Heiji Watanabe,Masakazu Ichikawa, J. Appl. Phys. 83 (1998) 3638-3642., 1998/04
  • Preservation of Atomic Flatness at SiO2/Si(111) Interface During Furnace Oxidation, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, American Physical Society March Meeting, 1998, Los Angeles., 1998/03
  • Observation and Creation of Current Leakage Sites in Ultrathin SiO2 Films Using Scanning Tunneling Microscopy, Heiji Watanabe,Masakazu Ichikawa, American Physical Society March Meeting, 1998, Los Angeles., 1998/03
  • Nanometer Si Selective Homoepitaxial Growth Observed by Scanning Tunneling Microscopy, Ken Fujita,Heiji Watanabe,Masakazu Ichikawa, J. Crystal Growth 188 (1998) 197-204., 1998/02
  • Influence of the Initial Si Surface Structure on SiO2/Si(111) Interfaces and Thermal Decomposition of the Oxide Films, Heiji Watanabe,Masakazu Ichikawa, Surf. Sci. 408 (1998) 95-100., 1998/02
  • Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy, Heiji Watanabe,Ken Fujita,Masakazu Ichikawa, Applied Physics Letters, Vol. 72, No. 16, p. 1987-1989, 1998
  • Atomic-scale structure of interface formed by furnace oxidation, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 20, p. 13670-13676, 1998
  • HF-chemical etching of the oxide layer near a SiO2/Si(111) interface, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Applied Physics Letters, Vol. 73, No. 26, p. 3923-3925, 1998
  • Void formation during thermal decomposition of ultrathin oxide layers on the Si(110) surface, Ken Fujita,Heiji Watanabe,Masakazu Ichikawa, Surface Science, Elsevier, Vol. 398, No. 1-2, p. 134-142, 1998
  • Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy, Heiji Watanabe,Ken Fujita,Masakazu Ichikawa, Applied Physics Letters, Vol. 72, No. 16, p. 1987-1989, 1998
  • Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnace, Noriyuki Miyata,Heiji Watanabe,Masakazu Ichikawa, Applied Physics Letters, Vol. 72, No. 14, p. 1715-1717, 1998
  • Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces, Heiji Watanabe,Koichi Kato,Tsuyoshi Uda,Ken Fujita,Masakazu Ichikawa,Takaaki Kawamura,Kiyoyuki Terakura, Physical Review Letters, Vol. 80, No. 2, p. 345-348, 1998
  • Self-organized Ge clustering on partially Ga-terminated Si(111) surfaces, S. Maruno,S. Fujita,H. Watanabe,Y. Kusumi,M. Ichikawa, Journal of Applied Physics, American Institute of Physics Inc., Vol. 83, No. 1, p. 205-211, 1998/01/01
  • Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO2 Layers Used in Nanofabrication, Heiji Watanabe,Shinobu Fujita,Shigemitsu Maruno,Ken Fujita,Masakazu Ichikawa, Jpn. J. Appl. Phys. 36 (1997) 7777-7781., 1997/12
  • Layer-by-Layer Sputtering of Si(111) and (001) Surfaces Mediated by Surface Vacancy Diffusion: Surface Physics and Application for Nanofabrication, Heiji Watanabe,Masakazu Ichikawa, J. Vac. Sci. Technol. B15 (1997) 2666-2671., 1997/11
  • Layer-by-Layer Oxidation of Si(111) Surfaces and Thermal Decomposition of the Ultrathin Oxide Layers, Heiji Watanabe,Ken Fujita,Masakazu Ichikawa, Abst. Int. Symposium on Atomically Controlled Surfaces and Interfaces, 1997, Tokyo, pp.185-186., 1997/10
  • Oxidation of Partially Ga-Terminated Si(111) Surfaces, Shigemitsu Maruno,Shinobu Fujita,Heiji Watanabe,Masakazu Ichikawa, Surf. Sci. 377 (1997) 775-779., 1997/10
  • Layer-by-Layer Oxidation of Si(001) Surfaces, Heiji Watanabe,Ken Fujita,T. Kawamura,Masakazu Ichikawa, Ext. Abst. Int. Conf. Solid State Device and Materials, 1997, Hamamatsu, pp.538-539., Vol. 39, No. 4, p. 2015-2020, 1997/09
  • Selective thermal decomposition of ultrathin silicon oxide layers induced by electron-stimulated oxygen desorption, Heiji Watanabe,Shinobu Fujita,Shigemitsu Maruno,Ken Fujita,Masakazu Ichikawa, Applied Physics Letters, American Institute of Physics Inc., Vol. 71, No. 8, p. 1038-1040, 1997/08/25
  • Observation of oxide/Si(001)-interface during layer-by-layer oxidation by scanning reflection electron microscopy, S. Fujita,H. Watanabe,S. Maruno,M. Ichikawa,T. Kawamura, Applied Physics Letters, American Institute of Physics Inc., Vol. 71, No. 7, p. 885-887, 1997/08/18
  • In-situ Monitoring of Nanoscale Si Selective Epitaxial Growth on Si Surfaces Using Scanning Tunneling Microscopy, Ken Fujita,Heiji Watanabe,Masakazu Ichikawa, International Conference on Chemical Beam Epitaxy, 1997, Switerland., 1997/08
  • Observation of selective thermal desorption of electron stimulated SiO2 with a combined scanning reflection electron microscope/scanning tunneling microscope, S. Maruno,S. Fujita,H. Watanabe,M. Ichikawa, Journal of Applied Physics, American Institute of Physics Inc., Vol. 82, No. 2, p. 639-643, 1997/07/15
  • Observation and Fabrication of Si Nanostructures by Scanning Reflection Electron Microscopy, Masakazu Ichikawa,Shinobu Fujita,Shigemitsu Maruno,Heiji Watanabe,Ken Fujita, Proc. Int. Centennial Symposium on the Electron, 1997, Cambridge, pp.389-396., 1997/07
  • Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO2 Layers Used in Nanofabrication, Heiji Watanabe,Shinobu Fujita,Shigemitsu Maruno,Ken Fujita,Masakazu Ichikawa, Digest Int. MicroProcess and Nanotechnology Conf., 1997, Nagoya, pp.12-13., 1997/07
  • Initial Oxidation of Si(111) and (001) Surfaces and Nanofabrication Using Oxide Layers, Heiji Watanabe,Ken Fujita,Masakazu Ichikawa, Abst. One-Day Workshop on JRCAT Surface Science Activities, 1997, Tsukuba, pp.6., 1997/06
  • Nanoscale Si Selective Epitaxial Growth on Si(001) and Si(110) Surfaces Passivated with 0.3-nm-thick Oxide Layer, Ken Fujita,Heiji Watanabe,Masakazu Ichikawa, Abst. One-Day Workshop on JRCAT Surface Science Activities, 1997, Tsukuba, pp.5., 1997/06
  • Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films, Ken Fujita,Heiji Watanabe,Masakazu Ichikawa, Applied Physics Letters, American Institute of Physics Inc., Vol. 70, No. 21, p. 2807-2809, 1997/05/26
  • Layer-by-Layer Sputtering of Si(111) and (001) Surfaces Mediated by Surface Vacancy Diffusion, Heiji Watanabe,Masakazu Ichikawa, Abst. Int. Conf. on Electron, Ion and Photon Beams and Nanotechnology, 1997, California, pp.57., 1997/05
  • Atomic-Step Observation at Buried SiO2/Si(111) Interfaces by Scanning Reflection Electron Microscopy, Heiji Watanabe,Ken Fujita,Masakazu Ichikawa, Surf. Sci. 385 (1997) L952-L957., 1997/04
  • Thermal decomposition of ultrathin oxide layers on Si(111) surfaces mediated by surface Si transport, Heiji Watanabe,Ken Fujita,Masakazu Ichikawa, Applied Physics Letters, American Institute of Physics Inc., Vol. 70, No. 9, p. 1095-1097, 1997/03/03
  • Thermal Decomposition of Ultrathin Oxide Layers on Si(111) Surfaces Mediated by Surface Si Diffusion, Heiji Watanabe,Ken Fujita,Masakazu Ichikawa, Appl. Phys. Lett. 70 (1997) 1095-1097., 1997/03
  • Structural Transformation of Hydrogen-Adsorbed Si(111)-√3x√3-Ag Surfaces Induced by Electron-Stimulated Desorption, Heiji Watanabe,Masakazu Ichikawa, Surf. Sci. 383 (1997) 95-102., 1997/03
  • Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams, S. Fujita,S. Maruno,H. Watanabe,M. Ichikawa, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 15, No. 3, p. 1493-1498, 1997
  • Observation of Thermal Desorption of Electron Stimulated SiO2 with a Combined SREM/STM, Shigemitsu Maruno,Shinobu Fujita,Heiji Watanabe,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1997, Tokyo, pp.65-68., 1997/01
  • Nanoscale Selective Si Epitaxial Growth on Si Surfaces with 0.3-nm-thick Oxide MasksTechnology, Ken Fujita,Heiji Watanabe,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom , 1997, Tokyo, pp.61-64., 1997/01
  • Observation of SiO2/Si(111) Interfaces and SiO2 Thermal Decomposition Using Scanning Reflection Electron Microscopy and Scanning Tunneling Microscopy, Heiji Watanabe,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1997, Tokyo, pp.57-60., 1997/01
  • Vacancy Diffusion Kinetics on Si(111) and (001) Surfaces Studied by Scanning Reflection Electron Microscopy, Heiji Watanabe,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1997, Tokyo, pp.53-56., 1997/01
  • Selective Thermal Reaction of SiO2 Induced by Electron Beams and their Applications to Nanofabrication, Shinobu Fujita,Shigemitsu Maruno,Heiji Watanabe,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1997, Tokyo, pp.13-16., 1997/01
  • Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams, S. Fujita,S. Maruno,H. Watanabe,M. Ichikawa, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 15, No. 3, p. 1493-1498, 1997
  • Anisotropic kinetics of vacancy diffusion and annihilation on Si(001) surfaces studied by scanning reflection electron microscopy, Heiji Watanabe,Masakazu Ichikawa, Physical Review B - Condensed Matter and Materials Physics, Vol. 55, No. 15, p. 9699-9705, 1997
  • Microprobe RHEED/STM combined microscopy, M. Ichikawa,S. Maruno,S. Fujita,H. Watanabe,Y. Kusumi, Surface Review and Letters, World Scientific Publishing Co. Pte Ltd, Vol. 4, No. 3, p. 535-542, 1997
  • A combined apparatus of scanning reflection electron microscope and scanning tunneling microscope, S. Maruno,H. Nakahara,S. Fujita,H. Watanabe,Y. Kusumi,M. Ichikawa, Review of Scientific Instruments, American Institute of Physics Inc., Vol. 68, No. 1, p. 116-119, 1997
  • Microstructure fabrication using oxidation on partially Ga-terminated Si(111) surfaces, S. Maruno,S. Fujita,H. Watanabe,M. Ichikawa, Applied Physics Letters, American Institute of Physics Inc., Vol. 69, No. 10, p. 1382-1384, 1996/09/02
  • Oxidation of Patially Ga-Terminated Si(111) Surface, Shigemitsu Maruno,Shinobu Fujita,Heiji Watanabe,Masakazu Ichikawa, European Conference on Surface Science, 1996, Genova., 1996/09
  • Nanostructure fabrication using the selective thermal desorption of SiO2 induced by electron beams, S. Fujita,S. Maruno,H. Watanabe,M. Ichikawa, Applied Physics Letters, American Institute of Physics Inc., Vol. 69, No. 5, p. 638-640, 1996/07/29
  • Self-Organized Ge Clustering on Partially Ga-Terminated Si(111), Shigemitsu Maruno,Shinobu Fujita,Heiji Watanabe,Masakazu Ichikawa, American Physical Society March Meeting, 1996, St. Lous., 1996/03
  • Scanning Reflection Electron Microscopy Study of an Initial Stage of Layer-by-Layer Sputtering of Si(111) Surface, Heiji Watanabe,Masakazu Ichikawa, American Physical Society March Meeting, 1996, St. Lous., 1996/03
  • Development of Ultra-Fine Structure Etching Apparatus and its Application to Layer-by-Layer Sputtering of the Si(111) Surface, Heiji Watanabe,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1996, Tokyo, pp.293-296., 1996/02
  • Selective Thermal-Desorption of SiO2/Si Induced by Electron Beams, Shinobu Fujita,Shigemitsu Maruno,Heiji Watanabe,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1996, Tokyo, pp.289-292., 1996/02
  • Fabrication of periodical nanostructures using electron interference fringes, S. Fujita,S. Maruno,H. Watanabe,Y. Kusumi,M. Ichikawa, Microelectronic Engineering, Elsevier, Vol. 30, No. 1-4, p. 435-438, 1996
  • Fabrication of periodical nanostructures using electron interference fringes, S. Fujita,S. Maruno,H. Watanabe,Y. Kusumi,M. Ichikawa, Microelectronic Engineering, Elsevier, Vol. 30, No. 1-4, p. 435-438, 1996
  • Kinetics of vacancy diffusion on Si(111) surfaces studied by scanning reflection electron microscopy, Heiji Watanabe,Masakazu Ichikawa, Physical Review B - Condensed Matter and Materials Physics, Vol. 54, No. 8, p. 5574-5580, 1996
  • Surfactant-mediated epitaxy of Ge on partially Ga-terminated Si(111) surfaces, S. Maruno,S. Fujita,H. Watanabe,Y. Kusumi,M. Ichikawa, Applied Physics Letters, Vol. 68, No. 16, p. 2213-2215, 1996
  • Fabrication of periodical nanostructures using electron interference fringes, S. Fujita,S. Maruno,H. Watanabe,Y. Kusumi,M. Ichikawa, Microelectronic Engineering, Elsevier, Vol. 30, No. 1-4, p. 435-438, 1996
  • Development of a multifunctional surface analysis system based on a nanometer scale scanning electron beam: Combination of ultrahigh vacuum-scanning electron microscopy, scanning reflection electron microscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy, Heiji Watanabe,Masakazu Ichikawa, Review of Scientific Instruments, American Institute of Physics Inc., Vol. 67, No. 12, p. 4185-4190, 1996
  • Kinetics of vacancy diffusion on Si(111) surfaces studied by scanning reflection electron microscopy, Heiji Watanabe,Masakazu Ichikawa, Physical Review B - Condensed Matter and Materials Physics, Vol. 54, No. 8, p. 5574-5580, 1996
  • Initial stage of layer-by-layer sputtering of Si(111) surfaces studied by scanning reflection electron microscopy, Heiji Watanabe,Masakazu Ichikawa, Applied Physics Letters, Vol. 68, No. 18, p. 2514-2516, 1996
  • Surfactant-mediated epitaxy of Ge on partially Ga-terminated Si(111) surfaces, S. Maruno,S. Fujita,H. Watanabe,Y. Kusumi,M. Ichikawa, Applied Physics Letters, Vol. 68, No. 16, p. 2213-2215, 1996
  • Sub-10-nm Lithography and Development Properties of Inorganic Resist by Scanning Electron Beams, Jun-ichi Fujita,Heiji Watanabe,Yukinori Ochiai,Shoko Manako,Jaw-Shen Tsai,Shinji Matsui, J. Vac. Sci. Technol. B13 (1995) 2757-2761., 1995/11
  • Fabrication of Periodical Nanostructures by Transferring Electron Interference Fringes, Shinobu Fujita,Shigemitsu Maruno,Heiji Watanabe,Yukihiro Kusumi,Masakazu Ichikawa, Abst. Int. Conf. Micro- and Nano-Engineering, 1995, France., 1995/09
  • Development Properties and Sub-10 nm Lithography by Scanning Electron Beam Using Inorganic Resist, Jun-ichi Fujita,Heiji Watanabe,Yukinori Ochiai,Shoko Manako,Jaw-Shen Tsai,Shinji Matsui, Abst. Int. Symposium on Electron, Ion and Photon Beams, 1995, Arizona, pp.153-154., 1995/05
  • Sub-10 nm Lithography and Development Properties of Inorganic Resist by Scanning Electron Beam, Jun-ichi Fujita,Heiji Watanabe,Yukinori Ochiai,Shoko Manako,Jaw-Shen Tsai,Shinji Matsui, Appl. Phys. Lett. 66 (1995) 3065-3067., 1995/05
  • Periodical Nanostructure Fabrication Using Electron Interference Fringes Produced by Scanning Interference Electron Microscope, Shinobu Fujita,Shigemitsu Maruno,Heiji Watanabe,Yukihiro Kusumi,Masakazu Ichikawa, Appl. Phys. Lett. 66 (1995) 2754-2756., 1995/05
  • Nanolithography Developed Through Electron Beam Induced Surface Reaction (INVITED), S. Matsui,Y. Ochiai,M. Baba,H. Watanabe, Materials Research Society Spring Meeting, 1995, San Francisco., 1995/04
  • Self-Developing Properties of High Resolution LiF(AlF3) Inorganic Electron Beam Resist, Heiji Watanabe,Jun-ichi Fujita,Yukinori Ochiai,Shinji Matsui,Masakazu Ichikawa, Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1995, Tokyo, pp.239-241., 1995/02
  • Self-developing properties of an inorganic electron beam resist and nanometer-scale patterning using a scanning electron beam, Heiji Watanabe,Jun-Ichi Fujita,Yukinori Ochiai,Shinji Matsui,Masakazu Ichikawa, Japanese Journal of Applied Physics, Vol. 34, No. 12, p. 6950-6955, 1995
  • Self-developing properties of an inorganic electron beam resist and nanometer-scale patterning using a scanning electron beam, Heiji Watanabe,Jun-Ichi Fujita,Yukinori Ochiai,Shinji Matsui,Masakazu Ichikawa, Japanese Journal of Applied Physics, Vol. 34, No. 12, p. 6950-6955, 1995
  • Electron-stimulated desorption and in situ scanning electron microscopy study on self-developing reaction of high-resolution inorganic electron beam resist, Heiji Watanabe,Jun-Ichi Fujita,Yukinori Ochiai,Shiniji Matsui,Masakazu Ichikawa, Japanese Journal of Applied Physics, Vol. 34, No. 7, p. L948-L950, 1995
  • XPS and ESD Study on Cl2/GaAs(100) Surface, Heiji Watanabe,Shinji Matsui, Gordon Research Conferences; Excitation at Semiconductor Surfaces, 1994, Hawaii., 1994/10
  • Low-Damage Electron-Beam-Assisted Dry Etching of GaAs and AlGaAs Using Electron Cyclotron Resonance Plasma Electron Source, Heiji Watanabe,Shinji Matsui, J. Vac. Sci. Technol. B11 (1993) 2288-2293., 1993/12
  • Nanolithography Using Electron Beam Induced Surface Reaction, Shinji Matsui,Yukinori Ochiai,Masakazu Baba,Heiji Watanabe, NATO Workshop, 1993, Rome., 1993/06
  • Electron-Beam-Assisted ry Etching of GaAs Using Electron Cyclotron Resonance Plasma Electron Source (INVITED), Heiji Watanabe,Shinji Matsui, Int. Conf. on Electron, Ion and Photon Beams and Nanotechnology, 1993, California., 1993/05
  • Visible Light Emission from Nanocrystalline Silicon-Oxide Phase of Porous Silicon, Yukinori Ochiai,T. Ichihashi,N. Ookubo,H. Ono,S. Matsui,M. Matsudate,Heiji Watanabe, American Physical Society March Meeting, 1993., 1993/03
  • Electron beam irradiation effects on cl2/gaas, Heiji Watanabe,Shinji Matsui, Japanese Journal of Applied Physics, Vol. 32, No. 12 S, p. 6158-6162, 1993
  • Nanometer-scale direct carbon mask fabrication using electron-beam-assisted deposition, Yukinori Ochiai,Heiji Watanabe,Jun-Ichi Fujita,Masakazu Baba,Shoko Manako,Shinji Matsui, Japanese Journal of Applied Physics, Vol. 32, No. 12 S, p. 6147-6152, 1993
  • Electron beam irradiation effects on cl2/gaas, Heiji Watanabe,Shinji Matsui, Japanese Journal of Applied Physics, Vol. 32, No. 12 S, p. 6158-6162, 1993
  • Nanometer-scale direct carbon mask fabrication using electron-beam-assisted deposition, Yukinori Ochiai,Heiji Watanabe,Jun-Ichi Fujita,Masakazu Baba,Shoko Manako,Shinji Matsui, Japanese Journal of Applied Physics, Vol. 32, No. 12 S, p. 6147-6152, 1993
  • Effects of electron-beam-assisted dry etching on optical and electrical properties, Heiji Watanabe,Yukinori Ochiai,Shinji Matsui, Applied Physics Letters, Vol. 63, No. 11, p. 1516-1518, 1993
  • Electron-Beam-Assisted Dry Etching for GaAs Using Electron Cyclotron Resonance Plasma Electron Source, Heiji Watanabe,Shinji Matsui, Appl. Phys. Lett. 61 (1992) 3011-3013., 1992/12
  • Electron-Beam-Assisted Dry Etching of GaAs, Heiji Watanabe,Shinji Matsui, Proc. Int. Symposium on Intelligent Design and Synthesis of Electron Material Systems, 1992, Osaka, pp.173-174., 1992/11
  • Dry Etching Utilizing Showered Electron Beam Assisted Etching, Shinji Matsui,Heiji Watanabe, Microelectronic Engineering 17 (1992) 337-340., 1992/09
  • Electron Beam Assisted Dry Etching, Heiji Watanabe,Shinji Matsui, NEC Research & Development 33 (1992) 481-493., 1992/06
  • Electron Beam Assisted Dry Etching, Heiji Watanabe,Shinji Matsui, NEC Research & Development, 1992/06
  • Low-Temperature Electron-Beam-Assisted Dry Etching for GaAs Using Electron-Stimulated Desorption, Heiji Watanabe,Shinji Matsui, Jpn. J. Appl. Phys. 31 (1992) L810-L812., 1992/06
  • Low-Temperature Electron-Beam-Assisted Dry Etching for GaAs Using Electron-Stimulated Desorption, Heiji Watanabe,Shinji Matsui, Tech. Digest Int. Workshop on Science and Technology for Surface Reaction Process, 1992, Tokyo, pp.125-126., 1992/01
  • Nanotechnology Developed Through Electron Beam Induced Surface Reaction, Shinji Matsui,Yukinori Ochiai,Masakazu Baba,Heiji Watanabe, Proc. Int. Workshop on Quantum Functional Devices, 1992, Nasu, pp.25-43., 1992/01
  • Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation, Yukinori Ochiai,Norio Ookubo,Heiji Watanabe,Shinji Matsui,Yasunori Mochizuki,Toshinari Ichihashi,Haruhiko Ono,Shigeru Kimura, Japanese Journal of Applied Physics, Vol. 31, No. 5, p. L560-L563, 1992
  • Nanostructure Technology Developed Through Electron-Beam-Induced Surface Reaction, Shinji Matsui,Toshinari Ichihashi,Yukinori Ochiai,Masakazu Baba,Heiji Watanabe,Akihiro Sato, Abst. Int. Symposium on Science and Technology of Mesoscopic Structures, 1991, Nara, pp.26-27, 1991/11
  • GaAs Dry Etching Using Electron Beam Induced Surface Reaction, Heiji Watanabe,Shinji Matsui, Jpn. J. Appl. Phys. 30 (1991) 3190-3194., Vol. 5, No. 11, p. 223-227, 1991/11
  • Dry Etching Utilizing Showered Electron Beam Assisted Etching, Shinji Matsui,Heiji Watanabe, Abst. Int. Conf. on Microlithography, 1991, Roma, B4.4., 1991/09
  • 10-nm Resolution Nanolithography Using Newly Developed 50 kV Electron Beam Direct Writing System, Yukinori Ochiai,Masakazu Baba,Heiji Watanabe,Shinji Matsui, Digest Int. MicroProcess Conf., 1991, Chiba, pp.202-203., 1991/07
  • GaAs Dry Etching Using Electron Beam Induced Surface Reaction, Heiji Watanabe,Shinji Matsui, Digest Int. MicroProcess Conf., 1991, Chiba, pp.112-113., Vol. 5, No. 11, p. 223-227, 1991/07
  • Gaas dry etching using electron beam induced surface reaction, Heiji Watanabe,Shinji Matsui, Japanese Journal of Applied Physics, Vol. 30, No. 11S, p. 3190-3194, 1991
  • Ten-nanometer resolution nanolithography using newly developed 50-kv electron beam direct writing system, Yukinori Ochiai,Masakazu Baba,Heiji Watanabe,Shinji Matsui, Japanese Journal of Applied Physics, Vol. 30, No. 11S, p. 3266-3271, 1991
  • Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl2 gas, S. Matsui,H. Watanabe, Applied Physics Letters, Vol. 59, No. 18, p. 2284-2286, 1991
  • Reverse dry etching using a high-selectivity carbon mask formed by electron beam deposition, Heiji Watanabe,Shinji Matsui, Japanese Journal of Applied Physics, Vol. 30, No. 9, p. L1598-L1600, 1991

Publications

  • Fundamental Aspects of Silicon Oxidation, Springer (Layer-by-Layer Oxidation of Si(001) Surfaces, pp.89-105.), H. Watanabe,N. Miyata,M. Ichikawa, Springer, 2001/02

Industrial Property Rights

  • 高誘電率薄膜を用いた半導体装置の製造方法, 渡部 平司, 4826971, 2000-385907, 出願日:2009/04, 登録日:2011/09
  • 半導体装置およびその製造方法, 間部 謙三,五十嵐 信行,吉原 拓也,渡部 平司, 4792716, 2004-198842, 出願日:2004/07, 登録日:2011/08
  • 半導体装置およびその製造方法, 渡部 平司,遠藤 和彦,間部 謙三, 4643884, 2002-187596, 出願日:2002/06, 登録日:2010/12
  • エピタキシャルSi膜の製造方法およびプラズマ処理装置, 大参宏昌,安武潔,垣内弘章,渡部平司, 4539985, 2005-319273, 出願日:2005/11, 登録日:2010/07
  • 高誘電率薄膜の成膜方法, 渡部 平司, 4367599, 2000-385907, 出願日:2000/12, 登録日:2009/09
  • 半導体装置の製造方法, 渡部 平司,渡辺 啓仁,辰巳 徹,藤枝 信次, 4239015, 2004-521225, 出願日:2003/07, 登録日:2009/01
  • 高誘電率絶縁膜を有する半導体装置とその製造方法, 渡部 平司,小野 春彦,五十嵐 信行, 4120938, 2003-522997, 出願日:2002/08, 登録日:2008/05
  • シリコン表面処理および素子作製方法, 渡部平司, 3386116, 平11-371496, 出願日:1999/04, 登録日:2003/01
  • 微細構造素子とその製造方法, 渡部平司, 3228250, 特願平 10-348217, 出願日:1998/12, 登録日:2001/09
  • 半導体表面のパターニング方法, 丸野 茂光,藤田 忍,渡部 平司,市川 昌和, 3115527, 平08-100343, 出願日:1996/04, 登録日:2000/09
  • 半導体微細構造の形成方法, 藤田 忍,丸野 茂光,渡部 平司,市川 昌和, 3059121, 平09-170195, 出願日:1997/04, 登録日:2000/04
  • 半導体基板の表面処理方法、表面処理装置、並びに半導体装置の製造方法, 渡部 平司,市川 昌和, 2912214, 平08-024978, 出願日:1996/02, 登録日:1999/04
  • 微細加工方法, 藤田 忍,丸野 茂光,渡部 平司,市川 昌和, 2922149, 平08-024195, 出願日:1996/02, 登録日:1999/04
  • 半導体酸化膜の形成方法, 加藤 弘一,渡部 平司, 2880993, 平10-081628, 出願日:1998/03, 登録日:1999/01
  • 半導体表面のパターニング方法及び半導体装置の製造方法, 藤田 忍,丸野 茂光,渡部 平司,楠見 之博,市川 昌和, 2831953, 平07-217883, 出願日:1995/08, 登録日:1998/10
  • 微細構造発光素子作製方法, 渡部平司, 2806136, 平04-083174, 出願日:1992/03, 登録日:1998/07
  • 微細パターン形成方法, 渡部平司, 2737613, 平05-273929, 出願日:1993/11, 登録日:1998/01
  • 電子ビーム励起ドライエッチングにおける選択エッチング方法, 渡部平司, 2104999, 平05-013380, 出願日:1993/01, 登録日:1996/11
  • X線位相差撮像装置, 佐野 哲,田邊 晃一,吉牟田 利典,木村 健士,岸原 弘之,和田 幸久,和泉 拓朗,白井 太郎,土岐 貴弘,堀場 日明,志村 考功,渡部 平司,細井 卓治, 2016-148428, 出願日:2016/07
  • 単結晶状GeSn含有材料の製造方法および単結晶状GeSn含有材料基板, 志村考功,渡部平司,細井卓治, 特願2012-042746, 出願日:2012/02
  • 金属ナノ粒子の選択配置方法, 浦岡行治,山下一郎,鄭彬,渡部平司,是津信行, 特願2010-134731, 出願日:2010/06

Awards

  • 文部科学大臣表彰(科学技術賞・研究部門), 渡部平司, 文部科学省, 2019/04
  • 第8回(2016年秋季)応用物理学会 Poster Award, 冨田 崇史,岡 博史,小山 真広,田中 章吾,細井 卓治,志村 考功,渡部 平司, 公益社団法人 応用物理学会, 2016/09
  • 第7回(2016年春季)応用物理学会 Poster Award, 小川慎吾,淺原亮平,箕浦佑也,迫秀樹,川崎直彦,山田一子,宮本隆志,細井卓治,志村考功,渡部平司, 応用物理学会, 2016/03
  • The 4th Presidential Awards for Achievement in Research, Osaka University, Heiji Watanabe, Osaka University, 2015/07
  • The 3rd Presidential Awards for Achievement in Research, Osaka University, Heiji Watanabe, Osaka University, 2014/07
  • 第3回(2014年春季)応用物理学会 Poster Award, 小川慎吾,川崎直彦,木村耕輔,田中亮平,箕浦佑也,細井卓治,志村考功,渡部平司, 応用物理学会, 2014/03
  • 2011 Osaka University Achievement Awards in Research, Heiji Watanabe, Osaka University, 2011/07
  • 平成22年度矢崎学術賞(功績賞), 渡部平司, 矢崎科学技術振興記念財団, 2011/03
  • 第7回日本学士院学術奨励賞, 渡部平司, 日本学士院, 2011/03
  • 第7回日本学術振興会賞, 渡部平司, 日本学術振興会, 2011/03
  • 2008 IWDTF Best Poster Award, T. Shimura,Y. Okamoto,T. Inoue,T. Hosoi,H. Watanabe, The Japan Society of Applied Physics, Japan, 2008/11
  • 第29回応用物理学会論文賞「JJAP論文賞」, 渡部平司, 応用物理学会, 2007/07
  • 第62回 半導体・集積回路技術シンポジウムアワード, 渡部平司, 電気化学会, 2002/12
  • 平成9年度JRCAT賞特賞, 渡部平司,藤田忍, アトムテクノロジー研究体, 1998/11
  • 第20回(1998年度)応用物理学会賞(学会賞B:奨励賞), 渡部平司, 応用物理学会, 1998/09
  • 第1回(1996年 秋季)応用物理学会講演奨励賞, 渡部平司, 応用物理学会, 1997/03
  • 平成7年度JRCAT賞, 藤田忍,丸野茂光,渡部平司, アトムテクノロジー研究体, 1996/02

Presentations

  • A Branching Image Sensor for Sub-nanosecond Burst Imaging, Nguyen Hoai Ngo,Takayashi Shimura,Heiji Watanabe,Kazuhiro Shimonomura,Yoshinari Kamakura,Takeharu Goji Etoh, 2021/06/30
  • Super-temporal-resolution Image Sensor -- Beyond the Theoretical Highest Frame Rate of Silicon Image Sensors --, Nguyen Hoai Ngo,Takayoshi Shimura,Heiji Watanabe,Kazuhiro Shimonomura,Hideki Mutoh,Takeharu Goji Etoh, 2021/06/30
  • Control of SiO2/SiC Interface for SiC-based Power MOSFET, Takuji Hosoi,Takayoshi Shimura,Heiji Watanabe, International Conference on Processing & Manufacturing of Advanced Materials (Thermec’2021), 2021/06/01
  • Optoelectronic Integration Based on High-quality GeSn Grown by Liquid Phase Crystallization, Heiji Watanabe,Hiroshi Oka,Takuji Hosoi,Takayoshi Shimura, International Conference on Processing & Manufacturing of Advanced Materials (Thermec’2021), 2021/06/04

Media Coverage

  • GaN製パワー半導体 パナソニックが基地局向け, 日本経済新聞(電子版), 2018/02
  • 5G基地局向け半導体 小型で大電流耐える, 日経産業新聞, 2018/02
  • 大電力電源機器を高速・小型化 絶縁ゲート型GaNパワートランジスタ, 日刊工業新聞, 2018/02
  • 連続安定駆動が可能 MIS型GaNパワーTR, 電波新聞, 2018/02
  • 大阪大学ら SiC絶縁耐圧1.5倍 AlON膜で信頼性向上, 半導体産業新聞, 2012/12
  • 漏れ電流1ケタ低減 AlON採用のSiCトランジスタ 阪大など開発 長期信頼性も向上, 化学工業日報, 2012/12
  • 阪大/京大/ローム/東京エレ ゲート絶縁膜にAlON採用 SiCパワーMOSFET開発 13年度にも実用化めざす, 電波新聞, 2012/12
  • 電力損失を大幅低減 パワー半導体 アルミ酸化物使う 阪大など, 日経産業新聞, 2012/12
  • SiC MOSFET 高誘電率ゲート絶縁膜採用 阪大など 漏れ電流9割低減, 日刊工業新聞, 2012/12
  • 新CMOSしきい値制御技術 -32/22ナノ世代、ばらつき低減に効果-, 電波新聞, 2007/12
  • 電極組成変え電圧制御, 日刊工業新聞, 2007/12
  • ゲート金属の結晶性制御 -早大などが新技術-, 化学工業日報, 2007/12
  • 消費電力を1/10に -駆動能力が向上-, 日経産業新聞, 2007/12
  • しきい値電圧制御に成功(セリートなど) -45ナノ世代以降の次世代トランジスタ-, 日刊工業新聞, 2007/06
  • 金属・高誘電率膜の界面現象 電子レベルで解明, 日刊工業新聞, 2005/12