Comprehensive research on nitrided SiO₂/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes

Heiji WATANABE, Takuma Kobayashi, Hayato Iwamoto, Takato Nakanuma, Hirohisa Hirai, Mitsuru SOMETANI

Japanese Journal of Applied Physics　Vol. 64　No. 1　p. 010801-1-010801-9　2025/01/13　Research paper (scientific journal)

Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing

Takuma Kobayashi, Kensei Maeda, Masahiro Hara, Mikito Nozaki, Heiji Watanabe

Applied Physics Letters　Vol. 126　No. 1　p. 012108-1-012108-4　2025/01/06　Research paper (scientific journal)

Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

Takuma Kobayashi, Kaho Koyanagi, Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Heiji Watanabe

Applied Physics Letters　Vol. 125　No. 25　p. 252101-1-252101-5　2024/12/16　Research paper (scientific journal)

Impact of post-deposition annealing on SiO₂/SiC interfaces formed by plasma nitridation of the SiC surface and SiO₂ deposition

Hiroki Fujimoto, Takuma Kobayashi, Heiji WATANABE

Applied Physics Express　Vol. 17　No. 11　p. 116503-1-116503-4　2024/11/12　Research paper (scientific journal)

Impacts of post-deposition annealing on hole trap generation at SiO₂/p-type GaN MOS interfaces

Kazuki Tomigahara, Masahiro Hara, Mikito Nozaki, Takuma Kobayashi, Heiji Watanabe

Applied Physics Express　Vol. 17　No. 8　p. 081002-1-081002-4　2024/08/05　Research paper (scientific journal)

Characterization of nitrided SiC(1-100) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy

Takuma Kobayashi, Asato Suzuki, Takato Nakanuma, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe

Materials Science in Semiconductor Processing　Vol. 175　p. 108251-108251　2024/06　Research paper (scientific journal)

Oxygen-related defects in 4H-SiC from first principles

Sosuke Iwamoto, Takayoshi Shimura, Heiji WATANABE, Takuma Kobayashi

Applied Physics Express　Vol. 17　No. 5　p. 051008-1-051008-5　2024/05/24　Research paper (scientific journal)

Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures

Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi

Applied Physics Express　Vol. 17　No. 5　p. 051004-1-051004-5　2024/05/01　Research paper (scientific journal)

Separate evaluation of interface and oxide hole traps in SiO₂/GaN MOS structures with below- and above-gap light excitation

Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 17　No. 1　p. 011003-011003　2023/12/29　Research paper (scientific journal)

Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

Tae-Hyeon Kil, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

AIP Advances　Vol. 13　No. 11　p. 115304-1-115304-5　2023/11/01　Research paper (scientific journal)

Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study

Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

Journal of Applied Physics　Vol. 134　No. 14　p. 145701-1-145701-9　2023/10/11　Research paper (scientific journal)

Passivation of hole traps in SiO₂/GaN metal-oxide-semiconductor devices by high-density magnesium doping

Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 16　No. 10　p. 105501-1-105501-4　2023/10/01　Research paper (scientific journal)

Impact of Sn incorporation on sputter epitaxy of GeSn

Nobuyuki Tanaka, Mizuki Kuniyoshi, Kazuya Abe, Masaki Hoshihara, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 16　No. 9　p. 095502-095502　2023/09/12　Research paper (scientific journal)

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi

Applied Physics Letters　Vol. 123　No. 10　p. 102102-1-102102-5　2023/09/06　Research paper (scientific journal)

Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy

Shingo Ogawa, Hidetoshi Mizobata, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

Journal of Applied Physics　Vol. 134　No. 9　p. 095704-1-095704-7　2023/09/05　Research paper (scientific journal)

Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films

Takayoshi Shimura, Shogo Tanaka, Takuji Hosoi, Heiji Watanabe

Journal of Electronic Materials　Vol. 52　No. 8　p. 5053-5058　2023/08/01　Research paper (scientific journal)

Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO₂ deposition and CO₂ annealing

Hiroki Fujimoto, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 16　No. 7　p. 074004-1-074004-4　2023/07/28　Research paper (scientific journal)

Formation of high-quality SiO₂/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO₂

Kentaro Onishi, Takuma Kobayashi, Hidetoshi Mizobata, Mikito Nozaki, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 62　p. 050903-1-050903-4　2023/05/16　Research paper (scientific journal)

Reduction of interface and oxide traps in SiO₂/GaN MOS structures by oxygen and forming gas annealing

Bunichiro Mikake, Takuma Kobayashi, Hidetoshi Mizobata, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 16　No. 3　p. 031004-1-031004-4　2023/03/20　Research paper (scientific journal)

Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

Takayoshi Shimura, Ryoga Yamaguchi, Naoto Tabuchi, Masato Kondoh, Mizuki Kuniyoshi, Takuji Hosoi, Takuma Kobayashi, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 62　No. SC　p. SC1083-1-SC1083-5　2023/03/01　Research paper (scientific journal)

Optical Characteristics of Single-Crystal GeSn Thin Wires Fabricated by Local Liquid Phase Crystallization

Takayoshi Shimura, Takuji Hosoi, Takuma Kobayashi, Heiji Watanabe

The Review of Laser Engineering　Vol. 50　No. 10　p. 565-569　2022/10　Research paper (scientific journal)

Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation

Hiroki Fujimoto, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 15　No. 10　p. 104004-104004　2022/10/01　Research paper (scientific journal)

Electrical properties and energy band alignment of SiO₂/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 0001¯) substrates

Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 121　No. 6　p. 062104-1-062104-6　2022/08/08　Research paper (scientific journal)

Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors

Takuji Hosoi, Momoe Ohsako, Kidist Moges, Koji Ito, Tsunenobu Kimoto, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 69　No. 6　p. 061003-1-061003-5　2022/06/01　Research paper (scientific journal)

Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons

Nguyen Hoai Ngo, Takeharu Goji Etoh, Kazuhiro Shimonomura, Taeko Ando, Yoshiyuki Matsunaga, Takayoshi Shimura, Heiji Watanabe, Hideki Mutoh, Yoshinari Kamakura, Edoardo Charbon

IEEE Transactions on Electron Devices　Vol. 69　No. 6　p. 2879-2885　2022/06　Research paper (scientific journal)

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces

Takato Nakanuma, Yu Iwakata, Arisa Watanabe, Takuji Hosoi, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 61　No. {SC}　p. SC1065-1-SC1065-8　2022/05/01　Research paper (scientific journal)

Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 61　No. SC　p. SC1034-SC1034　2022/05/01　Research paper (scientific journal)

Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices

Takato Nakanuma, Takuma Kobayashi, Takuji Hosoi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 15　No. 4　p. 041002-1-041002-4　2022/04/01　Research paper (scientific journal)

Investigation of reliability of NO nitrided SiC(1100) MOS devices

Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2022 IEEE International Reliability Physics Symposium (IRPS)　p. 3B.2-1-3B.2-5　2022/03　Research paper (international conference proceedings)

Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors

Yutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

2022 IEEE International Reliability Physics Symposium (IRPS)　p. P66-1-P66-4　2022/03　Research paper (international conference proceedings)

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Yuhei Wada, Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takuji Hosoi, Tetsu Kachi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 120　No. 8　p. 082103-082103　2022/02/21　Research paper (scientific journal)

High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices

Takuji Hosoi, Momoe Ohsako, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 14　No. 10　p. 101001-1-101001-6　2021/10/01　Research paper (scientific journal)

Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy

Hidetoshi Nakanishi, Tatsuhiko Nishimura, Iwao Kawayama, Masayoshi Tonouchi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Journal of Applied Physics　Vol. 130　No. 11　p. 115305-1-115305-7　2021/09/21　Research paper (scientific journal)

Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation

Kidist Moges, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 14　No. 9　p. 091006-091006　2021/09/01　Research paper (scientific journal)

Backscattering X-ray imaging using Fresnel zone aperture

Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe

Applied Physics Express　Vol. 14　No. 7　p. 072002-072002　2021/07/01　Research paper (scientific journal)

Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway

Yuhei Wada, Hidetoshi Mizobata, Mikito Nozaki, Takuji Hosoi, Tetsuo Narita, Tetsu Kachi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 14　No. 7　p. 071001-071001　2021/07/01　Research paper (scientific journal)

A Pixel Design of a Branching Ultra-Highspeed Image Sensor

Nguyen Hoai Ngo, Kazuhiro Shimonomura, Taeko Ando, Takayoshi Shimura, Heiji Watanabe, Kohsei Takehara, Anh Quang Nguyen, Edoardo Charbon, Takeharu Goji Etoh

Sensors　Vol. 21　No. 7　p. 2506-2506　2021/04/03　Research paper (scientific journal)

Origin of Anomalous Fixed Charges at the SiO2/GaN Interface due to Forming Gas Annealing

p. 195-199　2021/01　Research paper (conference, symposium, etc.)

4H-SiC CMOS inverters fabricated by ultrahigh-temperature gate oxidation and forming gas annealing

Kidist Moges, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2020/12/09

Physical Origins of Anomalous Fixed Charges at the SiO2/GaN Interface Generated by Forming Gas Annealing

2020/12/09　Research paper (conference, symposium, etc.)

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light

Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon, Takeharu Goji Etoh

Sensors　Vol. 20　No. 23　p. 6895-6895　2020/12　Research paper (scientific journal)

Defect engineering in SiC technology for high-voltage power devices

Tsunenobu Kimoto, Heiji Watanabe

Applied Physics Express　Vol. 13　No. 12　p. 120101-120101　2020/12/01　Research paper (scientific journal)

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The Journal of The Institute of Image Information and Television Engineers　Vol. 74　No. 6　p. 936-941　2020/11　Research paper (scientific journal)

Gate Stack Technology for Advanced GaN-based MOS Devices

Heiji Watanabe, Takuji Hosoi, Mikito Nozaki, Hidetoshi Mizobata, Takayoshi Shimura

2020/09　Research paper (international conference proceedings)

Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices

Hidetoshi Mizobata, Yuhei Wada, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 13　No. 8　p. 081001-081001　2020/08/01　Research paper (scientific journal)

Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

Hironori Takeda, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Hiroshi Yano, Heiji Watanabe

Materials Science Forum　Vol. 1004　p. 620-626　2020/07　Research paper (scientific journal)

Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma

Mikito Nozaki, Daiki Terashima, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 59　No. SM　p. SMMA07-SMMA07　2020/07/01　Research paper (scientific journal)

Insight into gate dielectric reliability and stability of SiO2/GaN MOS devices

Yuhei Wada, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 59　No. SM　p. SMMA03-SMMA03　2020/07/01　Research paper (scientific journal)

Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces

T. Umeda, Y. Nakano, E. Higa, T. Okuda, T. Kimoto, T. Hosoi, H. Watanabe, M. Sometani, S. Harada

Journal of Applied Physics　Vol. 127　No. 14　p. 145301-145301　2020/04/14　Research paper (scientific journal)

Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams

Akira Uedono, Wataru Ueno, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe

Journal of Applied Physics　Vol. 127　No. 5　p. 054503-1-054503-8　2020/02　Research paper (scientific journal)

Highly Efficient Room Temperature Electroluminescence from GeSn Lateral PIN Diode Fabricated by Liquid-phase Crystallization

p. 65-68　2020/01　Research paper (conference, symposium, etc.)

Solid-phase Grown GeSn n-MOSFETs on GOI Wafer Fabricated by Flash Lamp Annealing

p. 121-124　2020/01

The Role of Oxygen Ambient Anneal for Ba-incorporated SiO2/SiC Interface

寺尾 豊, 辻 英徳, 細井 卓治, 張 旭芳, 矢野 裕司, 志村 考功, 渡部 平司

p. 137-139　2020/01

Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET

Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 59　No. 2　p. 021001-1-021001-8　2020/01　Research paper (scientific journal)

The role of oxygen ambient anneal for Ba-incorporated SiO2/SiC interface

Y. Terao, H. Tsuji, T. Hosoi, X. Zhang, H. Yano, T. Shimura, H. Watanabe

2019/12　Research paper (international conference proceedings)

Room Temperature Electroluminescence from Tensile-strained GeSn Lateral PIN Structures Fabricated by Nucleation-controlled Liquid-phase Crystallization

Y. Wada, T. Hosoi, T. Shimura, H. Watanabe

2019/12　Research paper (international conference proceedings)

High-temperature CO2 Process for Improvement of SiC MOS Characteristics

T. Hosoi, M. Ohsako, T. Shimura, H. Watanabe

2019/12　Research paper (international conference proceedings)

レーザーテラヘルツエミッション顕微鏡を用いたSiC MOS界面の表面ポテンシャル評価

西村辰彦, 中西英俊, 川山巌, 斗内政吉, 細井卓治, 志村考功, 渡部平司

2019/12

SiO2中へのGa拡散がSiO2/GaN MOS特性に与える影響の評価

和田悠平, 野崎幹人, 細井卓治, 志村考功, 渡部平司

2019/12

AlGaN/GaNヘテロ構造の低バイアス電力ICPエッチングによる低損傷加工

野崎幹人, 寺島大貴, 吉越章隆, 細井卓治, 志村考功, 渡部平司

2019/12

CO2アニールによるSiO2/SiC界面窒素量制御とSiC MOSFET信頼性向上

細井卓治, 大迫桃恵, 伊藤滉二, 志村考功, 木本恒暢, 渡部平司

2019/12

Evaluation of Reactive Ion Etching-induced Damage on 2DEG at AlGaN/GaN Interface

Mikito Nozaki, Daiki Terashima, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2019/11　Research paper (international conference proceedings)

Thermal Oxidation of SiC: Kinetics and SiO2/SiC Interface Property

Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2019/11　Research paper (international conference proceedings)

Oxidation of SiGe Alloy: Residual Order in SiO2 and Self-limiting Oxidation

Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe

2019/11　Research paper (international conference proceedings)

Characterization of Surface Potential of Oxidized Silicon Carbide by a Laser Terahertz Emission Microscope

Tatsuhiko Nishimura, Hidetoshi Nakanishi, Iwao Kawayama, Masayoshi Tonouchi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2019/10　Research paper (international conference proceedings)

Interface Engineering of SiC MOS Devices by High-temperature CO2 Treatment

Takuji Hosoi, Momoe Ohsako, Takayoshi Shimura, Heiji Watanabe

2019/10　Research paper (international conference proceedings)

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Mitsuru Sometani, Takuji Hosoi, Hirohisa Hirai, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takayoshi Shimura, Heiji Watanabe, Yoshiyuki Yonezawa, Hajime Okumura

APPLIED PHYSICS LETTERS　Vol. 115　No. 13　p. 132102-1-132102-5　2019/09　Research paper (scientific journal)

Gate stack engineering for GaN power MOSFETs

T. Hosoi, M. Nozaki, T. Shimura, H. Watanabe

2019/08　Research paper (international conference proceedings)

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

Kidist Moges, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Shinsuke Harada, Heiji Watanabe

Materials Science Forum　Vol. 963　p. 226-229　2019/07　Research paper (scientific journal)

Evaluation of the Impact of Al Atoms on SiO2/SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFET

Hironori Takeda, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 963　p. 171-174　2019/07　Research paper (scientific journal)

Recent progress in understanding carbon-related interface defects and electrical properties in SiC-MOS devices

T. Hosoi, K. Moges, T. Shimura, H. Watanabe

2019/07　Research paper (international conference proceedings)

Characterization of nitrogen distribution near SiO2/SiC interfaces annealed in NO

Vol. 119　No. 96　p. 1-4　2019/06　Research paper (scientific journal)

Tensile-strained GeSn-on-SOI MSM Photodetector Fabricated by Solid-phase Epitaxy

H. Oka, W. Mizubayashi, T. Hosoi, T. Shimura, H. Watanabe, T. Maeda, N. Uchida, K. Endo

2019/06　Research paper (international conference proceedings)

Comparative study on thermal robustness of GaN and AlGaN/GaN MOS devices with thin oxide interlayers

Mikito Nozaki, Daiki Terashima, Takahiro Yamada, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 58　No. SC　p. SCCD08-1-SCCD08-6　2019/05　Research paper (scientific journal)

Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator

Takuji Hosoi, Kenta Watanabe, Mikito Nozaki, Takahiro Yamada, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 58　No. SC　p. SCCD16-1-SCCD16-6　2019/05　Research paper (scientific journal)

Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Kidist Moges, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 12　No. 6　p. 061003-1-061003-4　2019/05　Research paper (scientific journal)

Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices

Takahiro Yamada, Daiki Terashima, Mikito Nozaki, Hisashi Yamada, Tokio Takahashi, Mitsuaki Shimizu, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 58　No. SC　p. SCCD06-1-SCCD06-5　2019/04　Research paper (scientific journal)

Analysis of III–V oxides at high-k/InGaAs interfaces induced by metal electrodes

Shinichi Yoshida, Dennis H L Lin, Rena Suzuki, Yuki Miyanami, Nadine Collaert, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 58　No. 5　p. 051010-1-051010-6　2019/04　Research paper (scientific journal)

近赤外イメージセンサーに向けた石英基板上裏面照射型GeSnフォトダイオードアレイの開発

岡 博史, 井上 慶太郎, Thi Thuy Nguyen, 黒木 伸一郎, 細井 卓治, 志村 考功, 渡部 平司

2019/03

Interface property of thermally grown SiO2/SiC structures and MOS characteristics

2019/02

Demonstration of mm long nearly intrinsic GeSn single-crystalline wires on quartz substrate fabricated by nucleation-controlled liquid-phase crystallization

Youki Wada, Keitaro Inoue, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 58　No. SB　p. SBBK01-1-SBBK01-6　2019/02　Research paper (scientific journal)

Theoretical Study on the Effect of Incorporation of Hf Atoms in AlON Dielectrics

Takuya Nagura, Kenta Chokawa, Masaaki Araidai, Takuji Hosoi, Heiji Watanabe, Atsushi Oshiyama, Kenji Shiraishi

2019/01

Synchrotron-Radiation X-ray Photoelectron Spectroscopy Study of GaOx Interlayer Growth on GaN Substrate with Different Conduction Type

Takahiro Yamada, Daiki Terashima, Mikito Nozaki, Hisashi Yamada, Tokio Takahashi, Mitsuaki Shimizu, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2019/01

Effect of incorporating Hf atoms in AlON gate dielectrics on hole leakage current

T. Nagura, K. Chokawa, M. Araidai, T. Hosoi, H. Watanabe, A. Oshiyama, K. Shiraishi

2018/12　Research paper (international conference proceedings)

High-mobility P- and N-channel GeSn Thin-film Transistors on Transparent Substrate Fabricated by Nucleation-controlled Liquid-phase Crystallization

T. Hosoi, H. Oka, K. Inoue, Y. Wada, T. Shimura, H. Watanabe

2018/12　Research paper (international conference proceedings)

Improved reliability of SiO2/GaN MOS devices by controlling the oxide interlayer

Takahiro Yamada, Daiki Terashima, Mikito Nozaki, Hisashi Yamada, Tokio Takahashi, Mitsuaki Shimizu, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2018/11　Research paper (international conference proceedings)

Comparative study of thermal decomposition of thin Ga oxide layer on GaN and AlGaN surfaces

Mikito Nozaki, Daiki Terashima, Takahiro Yamada, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2018/11　Research paper (international conference proceedings)

Mobility enhancement in AlGaN/GaN MOS-HFET with gate recess etching by using AION gate insulator

Takuji Hosoi, Kenta Watanabe, Mikito Nozaki, Takahiro Yamada, Takayoshi Shimura, Heiji Watanabe

2018/11　Research paper (international conference proceedings)

Scattering Origins of Inversion Channel Electron on 4H-SiC MOSFET Investigated by Ultralow Net Concentration P-type Epitaxial Wafers

2018/11

High-temperature CO2 treatment for improvement of SiC MOS interface properties

2018/11

Insight into channel conduction mechanism based on temperature dependence of free channel electron density in 4H-SiC(0001) MOSFET

2018/11

Comparative study of thermal decomposition of thin Ga oxide layer on GaN and AlGaN surfaces

2018/11

Precise evaluation of N distribution near SiO2/SiC interface in NO-annealed SiC MOS structures

2018/11

Influence of GaN Conduction Type on Formation of GaOx Interlayer in SiO2/GaN Structure

2018/11

Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling

Mitsuru Sometani, Yoshihito Katsu, Daisuke Nagai, Hidenori Tsuji, Takuji Hosoi, Takayoshi Shimura, Yoshiyuki Yonezawa, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 57　No. 12　p. 120304-1-120304-4　2018/10　Research paper (scientific journal)

Optoelectronic Integration Based on High-quality GeSn Grown by Liquid Phase Crystallization

T. Hosoi, H. Oka, T. Shimura, H. Watanabe

2018/10　Research paper (international conference proceedings)

Gate Stack Technology for Advanced GaN and SiC based MOS Devices

H. Watanabe, T. Yamada, M. Nozaki, K. Moges, T. Hosoi, T. Shimura

2018/10　Research paper (international conference proceedings)

Highly n-Type Doped Ge and Gesn Wires Fabricated By Lateral Liquid-Phase Epitaxy

H. Watanabe, T. Tomita, H. Oka, K. Inoue, T. Hosoi, T. Shimura

2018/10　Research paper (international conference proceedings)

Gate Stack Technology for Advanced GaN-Based Mos Devices

H. Watanabe, T. Yamada, M. Nozaki, T. Hosoi, T. Shimura

2018/10　Research paper (international conference proceedings)

First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current

Takuya Nagura, Kenta Chokawa, Masaaki Araidai, Takuji Hosoi, Heiji Watanabe, Atsushi Oshiyama, Kenji Shiraishi

2018/09　Research paper (international conference proceedings)

Characterization of SiO2/SiC interface using a Laser Terahertz Emission Microscope

Tatsuhiko Nishimura, Hidetoshi Nakanishi, Iwao Kawayama, Masayoshi Tonouchi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2018/09　Research paper (international conference proceedings)

Demonstration of mm-long Nearly Intrinsic GeSn Single-crystalline Wires on Quartz Substrate by Nucleation-controlled Liquid-phase Crystallization

Youki Wada, Keitaro Inoue, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2018/09　Research paper (international conference proceedings)

Electron-spin-resonance characterization on interface carbon defects at 4H-SiC/SiO2 interfaces formed by ultrahigh-temperature oxidation

T. Umeda, T. Hosoi, T. Okuda, T. Kimoto, M. Sometani, S. Harada, H. Watanabe

2018/09　Research paper (international conference proceedings)

Superiority of pure O2-based gate oxidation on Hall effect mobility of 4H-SiC (0001) MOSFET revealed by low-doped epitaxial wafers

M. Sometani, T. Hosoi, T. Hatakeyama, S. Harada, H. Yano, T. Shimura, H. Watanabe, Y. Yonezawa, H. Okumura

2018/09　Research paper (international conference proceedings)

Evaluation of the impact of Al atoms on SiO2/SiC interface property by using 4H-SiC n+-channel junctionless MOSFET

H. Takeda, T. Hosoi, T. Shimura, H. Watanabe

2018/09　Research paper (international conference proceedings)

Sub-nm-scale depth profiling of nitrogen in NO- and N2-annealed SiO2/4H-SiC(0001) structures

K. Moges, M. Sometani, T. Hosoi, T. Shimura, S. Harada, H. Watanabe

2018/09　Research paper (international conference proceedings)

Sub-nanometer-scale depth profiling of nitrogen atoms in SiO2/4H-SIC structures treated with NO annealing

Kidist Moges, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Shinsuke Harada, Heiji Watanabe

APPLIED PHYSICS EXPRESS　Vol. 11　No. 10　p. 101303-1-101303-4　2018/09　Research paper (scientific journal)

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

Eigo Fujita, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

AIP ADVANCES　Vol. 8　No. 8　p. 085305-1-085305-6　2018/08　Research paper (scientific journal)

Passive–active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O2/Ar gas mixture and its impact on SiO2/SiC interface quality

Takuji Hosoi, Yoshihito Katsu, Kidist Moges, Daisuke Nagai, Mitsuru Sometani, Hidenori Tsuji, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 11　No. 9　p. 091301-1-091301-4　2018/08　Research paper (scientific journal)

Advancement of X-ray radiography using microfocus X-ray source in conjunction with amplitude grating and SOI pixel detector, SOPHIAS

Ryo Hosono, Tomoki Kawabata, Kiyoshi Hayashida, Togo Kudo, Kyosuke Ozaki, Nobukazu Teranishi, Takaki Hatsui, Takuji Hosoi, Heiji Watanabe, Takayoshi Shimura

Optics Express　Vol. 26　No. 16　p. 21044-21053　2018/08　Research paper (scientific journal)

Dielectric Thin Films for Future Electron Devices: Science and Technology FOREWORD

Watanabe Heiji, Nara Yasuo, Kamakura Yoshinari

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 57　No. 6　2018/06　Research paper (scientific journal)

GaN-based Metal-Insulator-Semiconductor Transistors on Si for Power Switching Applications

Satoshi Nakazawa, Hong-An Shih, Naohiro Tsurumi, Yoshiharu Anda, Tsuguyasu Hatsuda, Tetsuzo Ueda, Mikito Nozaki, Takahiro Yamada, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe, Tamotsu Hashizume

2018/06　Research paper (international conference proceedings)

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

Eiji Kojima, Kenta Chokawa, Hiroki Shirakawa, Masaaki Araidai, Takuji Hosoi, Heiji Watanabe, Kenji Shiraishi

APPLIED PHYSICS EXPRESS　Vol. 11　No. 6　p. 061501-1-061501-4　2018/06　Research paper (scientific journal)

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Mikito Nozaki, Kenta Watanabe, Takahiro Yamada, Hong-An Shih, Satoshi Nakazawa, Yoshiharu Anda, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 57　No. 6　p. 06KA02-1-06KA02-7　2018/06/01　Research paper (international conference proceedings)

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Takahiro Yamada, Kenta Watanabe, Mikito Nozaki, Hong-An Shih, Satoshi Nakazawa, Yoshiharu Anda, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 57　No. 6　p. 06KA07-1-06KA07-6　2018/06/01　Research paper (international conference proceedings)

Interface engineering in GaN metal-oxide-semiconductor device with SiO2 gate insulator

2018/06

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Kenta Watanabe, Daiki Terashima, Mikito Nozaki, Takahiro Yamada, Satoshi Nakazawa, Masahiro Ishida, Yoshiharu Anda, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 57　No. 6　p. 06KA03-1-06KA03-6　2018/06/01　Research paper (international conference proceedings)

Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams

Akira Uedono, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe

Applied Physics Letters　Vol. 112　No. 18　2018/04/30　Research paper (scientific journal)

AlON/AlGaN/GaN MIS-HFETによる高速スイッチング動作

中澤敏志, 施泓安, 鶴見直大, 按田義治, 初田次康, 上田哲三, 野﨑幹人, 山田高寛, 細井卓治, 志村考功, 渡部平司, 橋詰保

2018/03

裏面照射型近赤外イメージセンサーに向けた基板上単結晶GeSnフォトダイオードアレイの開発

岡博史, 井上慶太郎, Thi Thuy Nguyen, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司

2018/03

High-mobility TFT and Enhanced Luminescence Utilizing Nucleation-controlled GeSn Growth on Transparent substrate for Monolithic Optoelectronic Integration

H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, H. Watanabe

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)　2018/01　Research paper (international conference proceedings)

Improvement of SiO2/4H-SiC(0001) interface properties by H2 and Ar mixture gas treatment prior to SiO2 deposition

Hidenori Tsuji, Takuji Hosoi, Yutaka Terao, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 924　p. 461-464　2018　Research paper (international conference proceedings)

High-mobility TFT and enhanced luminescence utilizing ucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic

H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, H. Watanabe

2018/01

Recent Advances in GaN MIS-HFETs on Si Substrate

p. 87-90　2018/01

Low-Temperature Optical Property and Cavity Formation of Tensile-Strained Highly n-Doped Ge Wires Fabricated by Lateral Liquid-Phase Epitaxy

p. 9-12　2018/01

Single-Crystalline GeSn Formation on Quartz Substrate and Its Optoelectronic Applications

p. 151-154　2018/01

Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

Takahiro Yamada, Kenta Watanabe, Mikito Nozaki, Hisashi Yamada, Tokio Takahashi, Mitsuaki Shimizu, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 11　No. 1　p. 015701-1-015701-4　2018/01/01　Research paper (scientific journal)

Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization

Hiroshi Oka, Takashi Tomita, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 11　No. 1　p. 011304-1-011304-4　2018/01/01　Research paper (scientific journal)

Improvements of Grating-based X-ray Phase Contrast Imaging with a Microfocus X-ray Source by a SOI Pixel Detector, SOPHIAS

R. Hosono, D. Tsukamoto, T. Kawabata, K. Hayashida, T. Kudo, K. Ozaki, T. Hatsui, N. Teranishi, T. Hosoi, H. Watanabe, T. Shimura

2017/12　Research paper (international conference proceedings)

AlGaN/GaN MOS-HFET with high-quality and robust N-incorporated aluminum oxide (AlON) gate insulator

K. Watanabe, M. Nozaki, T. Yamada, S. Nakazawa, M. Ishida, Y. Anda, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe

2017/12　Research paper (international conference proceedings)

Improved Channel Mobility of 4H-SiC N-MOSFETs by Ultrahigh-Temperature Oxidation with Low-Oxygen Partial-Pressure Cooling Procedure

M. Sometani, Y. Katsu, D. Nagai, H. Tsuji, T. Hosoi, T. Shimura, Y. Yonezawa, H. Watanabe

2017/12　Research paper (international conference proceedings)

4H-SiC(0001) N- and P-channel MOSFETs with Pure SiO2 Gate Dielectrics Formed under Extreme Oxidation Conditions

T. Hosoi, Y. Katsu, K. Moges, H. Tsuji, M. Sometani, T. Shimura, H. Watanabe

2017/12　Research paper (international conference proceedings)

Fast Switching Performance by 20 A / 730 V AlGaN/GaN MIS-HFET Using AlON Gate Insulator

S. Nakazawa, H.-A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, M. Nozaki, T. Yamada, T. Hosoi, T. Shimura, H. Watanabe, T. Hashizume

2017/12　Research paper (international conference proceedings)

Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip

H. Oka, K. Inoue, T. T. Nguyen, S. Kuroki, T. Hosoi, T. Shimura, H. Watanabe

2017/12　Research paper (international conference proceedings)

SiO2/AlON Stacked Gate Dielectrics for AlGaN/GaN MOS-HFET

K. Watanabe, D. Terashima, M. Nozaki, T. Yamada, S. Nakazawa, M. Ishida, Y. Anda, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe

2017/11　Research paper (international conference proceedings)

AlON Gate Dielectrics Formed by Repeating ALD-based Thin AlN Deposition and In situ Oxidation for AlGaN/GaN MOS-HFETs

M. Nozaki, K. Watanabe, T. Yamada, H. Shih, S. Nakazawa, Y. Anda, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe

2017/11　Research paper (international conference proceedings)

Physical and Electrical Characterization of AlGaN/GaN MOS Gate Stacks with AlGaN Surface Oxidation Treatment

T. Yamada, K. Watanabe, M. Nozaki, H. Shih, S. Nakazawa, Y. Anda, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe

2017/11　Research paper (international conference proceedings)

レーザーテラヘルツエミッション顕微鏡を用いた 4H-SiC ウエハ/熱酸化膜の特性評価

西村辰彦, 中西英俊, 川山巌, 斗内政吉, 細井卓治, 志村考功, 渡部平司

2017/11

紫外光照射とアニール処理による SiC MOS キャパシタの電気特性改善

大迫 桃恵, 細井 卓治, 志村 考功, 渡部 平司

2017/11

プラズマ CVD 成膜した SiO2/AlGaN 界面特性の成膜電力依存性と堆積後熱処理の検討

寺島 大貴, 渡邉 健太, 山田 高寛, 野﨑 幹人, 施 泓安, 中澤 敏志, 按田 義治, 上田 哲三, 吉越 章隆, 細井 卓治, 志村 考功, 渡部 平司

2017/11

ジャンクションレス 4H-SiC(0001) MOSFET を用いた高濃度 n+層の電子移動度評価

武田 紘典, 細井 卓治, 志村 考功, 渡部 平司

2017/11

Impact of ultrahigh-temperature gate oxidation and hydrogen annealing on the performance of 4H-SiC(0001) p-channel MOSFETs

Kidist Moges, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2017/11

AlGaN/GaN MOS デバイス向け ALD-AlON ゲート絶縁膜に対する窒素添加効果

野崎 幹人, 渡邉 健太, 山田 高寛, 施 泓安, 中澤 敏志, 按田 義治, 上田 哲三, 吉越 章隆, 細井 卓治, 志村 考功, 渡部 平司

2017/11

ICP エッチング表面のプラズマ酸化処理による SiO2/GaN 界面欠陥の低減

山田 高寛, 渡邉 健太, 野崎 幹人, 高橋 言諸, 山田 永, 清水 三聡, 施 泓安, 中澤 敏志, 按田 義治, 上田 哲三, 吉越 章隆, 細井 卓治, 志村 考功, 渡部 平司

2017/11

High Mobility In0.53Ga0.47As MOSFETs with Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides with Metal Electrodes

S. Yoshida, H. C. Lin, A. Vais, A. Alian, J. Franco, S. El Kazzi, Y. Mols, Y. Miyanami, M. Nakazawa, N. Collaert, H. Watanabe, A. Thean

IEEE Journal of the Electron Devices Society　Vol. 5　No. 6　p. 480-484　2017/11/01　Research paper (scientific journal)

Reactivity of Water Vapor with Ultrathin GeO2/Ge and SiO2/Si Structures Investigated by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy

Kenta Arima, Takuji Hosoi, Heiji Watanabe, Ethan J Crumlin

ECS Transactions　Vol. 80　No. 2　p. 131-140　2017/09　Research paper (international conference proceedings)

マイクロフォーカスX線源と振幅格子を用いた多波長X線位相イメージング-SOI ピクセル検出器による高度化-

細野凌, 塚本大裕, 川端智樹, 林田 清, 工藤統吾, 尾崎恭介, 初井宇記, 寺西信一, 細井卓治, 渡部平司, 志村考功

2017/09

La埋め込みターゲットを用いたTalbot-Lau干渉計によるX線位相イメージング

塚本大裕, 山崎周, 細野凌, 細井卓治, 渡部平司, 志村考功

2017/09

Interface Property of SiO2/4H-SiC(0001) Structures Formed by Ultrahigh-Temperature Oxidation under Low Oxygen Partial Pressure

T. Hosoi, Y. Katsu, D. Nagai, H. Tsuji, M. Sometani, T. Shimura, H. Watanabe

2017/09　Research paper (international conference proceedings)

Significant Performance Improvement in 4HSiC(0001) P-Channel MOSFETs with Gate Oxides Grown at Ultrahigh-Temperature

Kidist Moges, T. Hosoi, T. Shimura, H. Watanabe

2017/09　Research paper (international conference proceedings)

Improvement of SiO2/4H-SiC(0001) Interface Properties by H2 and Ar Mixture Gas Treatment Prior to SiO2 Deposition

H. Tsuji, T. Hosoi, Y. Terao, T. Shimura, H. Watanabe

2017/09　Research paper (international conference proceedings)

Enhancement-mode n-channel TFT and room-temperature near-infrared emission based on n+/p junction in single-crystalline GeSn on transparent substrate

H. Oka, M. Koyama, T. Hosoi, T. Shimura, H. Watanabe

Digest of Technical Papers - Symposium on VLSI Technology　p. T58-T59　2017/07/31　Research paper (international conference proceedings)

Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

Kenta Watanabe, Mikito Nozaki, Takahiro Yamada, Satoshi Nakazawa, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 111　No. 4　2017/07/24　Research paper (scientific journal)

MOS Interface Engineering for Advanced SiC and GaN Power Devices

T. Hosoi, T. Shimura, H. Watanabe

2017/07　Research paper (international conference proceedings)

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Takahiro Yamada, Joyo Ito, Ryohei Asahara, Kenta Watanabe, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 110　No. 26　2017/06/26　Research paper (scientific journal)

Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium

Atthawut Chanthaphan, Yoshihito Katsu, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　2017/05　Research paper (scientific journal)

Ultrahigh Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties

Takuji Hosoi, Daisuke Nagai, Mitsuru Sometani, Takayoshi Shimura, Manabu Takei, Heiji Watanabe

2017/05　Research paper (scientific journal)

Impact of rapid cooling process in ultrahigh-temperature oxidation of 4H-SiC(0001)

Mitsuru Sometani, Daisuke Nagai, Yoshihito Katsu, Takuji Hosoi, Takayoshi Shimura, Manabu Takei, Yoshiyuki Yonezawa, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 56　No. 4　2017/04/01　Research paper (international conference proceedings)

High-mobility TFT and enhanced luminescence utilizing nucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic integration

H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, H. Watanabe

Technical Digest - International Electron Devices Meeting, IEDM　p. 22.1.1-22.1.4　2017/01/31　Research paper (international conference proceedings)

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Joyo Ito, Ryohei Asahara, Kenta Watanabe, Mikito Nozaki, Satoshi Nakazawa, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Journal of Applied Physics　Vol. 121　No. 3　2017/01/21　Research paper (scientific journal)

Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization

Hiroshi Oka, Takashi Amamoto, Masahiro Koyama, Yasuhiko Imai, Shigeru Kimura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 110　No. 3　2017/01/16　Research paper (scientific journal)

Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs

K. Watanabe, M. Nozaki, T. Yamada, S. Nakazawa, Y. Anda, M. Isliida, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　p. 219-222　2017　Research paper (international conference proceedings)

Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET

Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe

Proceedings of the International Symposium on Power Semiconductor Devices and ICs　p. 247-250　2017　Research paper (international conference proceedings)

Insight into metal-enhanced oxidation using barium on 4H-SiC surfaces

Atthawut Chanthaphan, Yoshihito Katsu, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 55　No. 12　2016/12/01　Research paper (international conference proceedings)

Impact of water-cooling process in ultra-high-temperature oxidation of 4H-SiC(0001)

2016/11

Interface engineering of Al based gate insulators in AlGaN/GaN MOS-HFETs

2016/11

Electrical characteristics of SiC MOSFET fabricated by ultra-high-temperature oxidation under low oxygen partial pressure

2016/11

Formation of thin GaOx Interlayer by thermal oxidation of SiO2/GaN and its effect on electrical properties

2016/11

Hole trapping characteristics in SiC-MOS devices with nitrided SiO2/SiC interface

2016/11

Gate stack technology for advanced power semiconductor devices-Technological similarities and differences between SiC and GaNMOS development-

2016/11

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

Takuji Hosoi, Daisuke Nagai, Mitsuru Sometani, Yoshihito Katsu, Hironori Takeda, Takayoshi Shimura, Manabu Takei, Heiji Watanabe

Applied Physics Letters　Vol. 109　No. 18　2016/10/31　Research paper (scientific journal)

Systematic study of interfacial reactions induced by metal electrodes in high- k /InGaAs gate stacks

S. Yoshida, D. Lin, A. Vais, A. Alian, J. Franco, S. El Kazzi, Y. Mols, Y. Miyanami, M. Nakazawa, N. Collaert, H. Watanabe, A. Thean

Applied Physics Letters　Vol. 109　No. 17　2016/10/24　Research paper (scientific journal)

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN: Key role of Al capping layers in interface scavenging reactions

Mikito Nozaki, Joyo Ito, Ryohei Asahara, Satoshi Nakazawa, Masahiro Ishida, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 9　No. 10　2016/10/01　Research paper (scientific journal)

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures

Ryohei Asahara, Mikito Nozaki, Takahiro Yamada, Joyo Ito, Satoshi Nakazawa, Masahiro Ishida, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Express　Vol. 9　No. 10　2016/10/01　Research paper (scientific journal)

Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

Daichi Mori, Hiroshi Oka, Takuji Hosoi, Kentaro Kawai, Mizuho Morita, Ethan J. Crumlin, Zhi Liu, Heiji Watanabe, Kenta Arima

Journal of Applied Physics　Vol. 120　No. 9　p. 095306 1-095306 10　2016/09/07　Research paper (scientific journal)

Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-enhanced Oxidation using Barium

A. Chanthaphan, Y. Katsu, T. Hosoi, T. Shimura, H. Watanabe

2016/09　Research paper (international conference proceedings)

Ultrahigh-tempearture Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties

T. Hosoi, D. Nagai, M. Sometani, T. Shimura, M. Takei, H. Watanabe

2016/09　Research paper (international conference proceedings)

Impact of Rapid Cooling Process in Ultra-high-temperature Oxidation of 4H-SiC(0001)

M. Sometani, D. Nagai, T. Hosoi, T. Shimura, Y. Yonezawa, M. Takei, H. Watanabe

2016 International Conference on Solid State Devices and Materials (SSDM 2011)　2016/09　Research paper (international conference proceedings)

Gate Stack Technology for Advanced AlGaN/GaN Mos-Hemt Power Devices

H. Watanabe, R. Asahara, J. Ito, K. Watanabe, M. Nozaki, T. Yamada, S. Nakazawa, Y. Anda, M. Ishida, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura

2016/09

SiO2/SiC界面への異種元素添加による界面準位低減とその留意点

細井 卓治, A. Chanthaphan, 勝 義仁, 志村 孝功, 渡部 平司

2016/08

7.2 High-mobility GeSn p-MOSFETs on Transparent Substrate Utilizing Nucleation-controlled Liquid-phase Crystallization

H. Oka, T. Amamoto, T. Hosoi, T. Shimura, H. Watanabe

2016/06　Research paper (international conference proceedings)

High-mobility GeSn-based MOSFETs on Transparent Substrates

H. Watanabe

2016/06　Research paper (international conference proceedings)

Origin of the unidentified positive mobile ions causing the bias temperature instability in SiC MOSFETs and their diffusion process

Hiroki Shirakawa, Katsumasa Kamiya, Masaaki Araidai, Heiji Watanabe, Kenji Shiraishi

APPLIED PHYSICS EXPRESS　Vol. 9　No. 6　2016/06　Research paper (scientific journal)

The impact of energy barrier height on border traps in the metal insulator semicondoctor gate stacks on III–V semiconductors

Yoshida Shinichi, Taniguchi Satoshi, Minari Hideki, Lin Dennis, Ivanov Tsvetan, Watanabe Heiji, Nakazawa Masashi, Collaert Nadine, Thean Aaron

Jpn. J. Appl. Phys.　Vol. 55　No. 8　2016/05　Research paper (scientific journal)

Ambient-pressure XPS observations of structures and electronic properties of water-adsorbed ultrathin GeO2 on Ge

Arima Kenta, Mori Daichi, Oka Hiroshi, Hosoi Takuji, Kawai Kentaro, Morita Mizuho, Watanabe Heiji, Liu Zhi, Crumlin Ethan J.

Abstract of annual meeting of the Surface Science of Japan　Vol. 36　p. 405-405　2016

Biotemplates and their application to electronic devices

Yukiharu Uraoka, Mutsunori Uenuma, Yasuaki Ishikawa, Shinya Kumagai, Satoshi Tomita, Heiji Watanabe, Ichiro Yamashita

Intelligent Nanosystems for Energy, Information and Biological Technologies　p. 119-143　2016/01/01　Part of collection (book)

Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices

Yoshihito Katsu, Takuji Hosoi, Yuichiro Nanen, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 858　p. 599-602　2016　Research paper (international conference proceedings)

Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing

Atthawut Chanthaphan, Yuta Fukushima, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 858　p. 445-448　2016　Research paper (international conference proceedings)

Improvement of SiO2/4H-SiC interface quality by post-oxidation annealing in N2 at high-temperatures

Atthawut Chanthaphan, Yen Hung Cheng, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 858　p. 627-630　2016　Research paper (international conference proceedings)

Flatband voltage shift depending on SiO2/SiC interface charges in 4H-SiC MOS capacitors with ALON/SiO2 stacked gate dielectrics

Takuji Hosoi, Shuji Azumo, Kenji Yamamoto, Masatoshi Aketa, Yusaku Kashiwagi, Shigetoshi Hosaka, Hirokazu Asahara, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 858　p. 681-684　2016　Research paper (international conference proceedings)

Band Gap Modulation of Tensile-Strained Ge by Top-Down Approach

2016/01

GaOx Formation Process in Thermal Oxidation of GaN

2016/01

Electrical Property of GeSn on Insulator Layer Fabricated by Lateral Liquid-Phase Epitaxy

2016/01

Self-Seeded Growth of Single-Crystal GeSn Alloys on Quartz Substrate by Rapid Thermal Annealing

2016/01

Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high- k gate stack

Takuji Hosoi, Yuya Minoura, Ryohei Asahara, Hiroshi Oka, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 107　No. 25　p. 252104-1-252104-5　2015/12/21　Research paper (scientific journal)

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

Shingo Ogawa, Ryohei Asahara, Yuya Minoura, Hideki Sako, Naohiko Kawasaki, Ichiko Yamada, Takashi Miyamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Journal of Applied Physics　Vol. 118　No. 23　p. 23704-1-23704-5　2015/12/21　Research paper (scientific journal)

Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology

H. Oka, Y. Minoura, R. Asahara, T. Hosoi, T. Shimura, H. Watanabe

2015/12

Effect of Nitrogen Incorporation into Al-based Gate Insulator in AlGaN/GaN MOS-HEMT

R. Asahara, M. Nozaki, T. Yamada, J. Ito, S. Nakazawa, M. Ishida, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe

2015/12　Research paper (international conference proceedings)

SiO2/SiC Interface Nitridation by High Temperature Pure Nitrogen Annealing

T. Hosoi, A. Chanthaphan, T. Shimura, H. Watanabe

2015/12　Research paper (international conference proceedings)

Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy

Takayoshi Shimura, Masahiro Matsue, Kohei Tominaga, Keiko Kajimura, Takashi Amamoto, Takuji Hosoi, Heiji Watanabe

Applied Physics Letters　Vol. 107　No. 22　2015/11/30　Research paper (scientific journal)

Design and demonstration of phase gratings for 2D single grating interferometer

Naoki Morimoto, Sho Fujino, Yasuhiro Ito, Amane Yamazaki, Issei Sano, Takuji Hosoi, Heiji Watanabe, Takayoshi Shimura

Optics Express　Vol. 23　No. 23　p. 29399-29412　2015/11/16　Research paper (scientific journal)

The Impact of Energy Barrier Height on Border Traps in III-V Gate Stacks

S. Yoshida, S. Taniguchi, H. Minari, D. Lin, Ts. Ivanov, H. Watanabe, M. Nakazawa, N. Collaert, A. Thean

2015/11　Research paper (international conference proceedings)

Investigation of Initial Oxide Growth on GaN Epitaxial Films

T. Yamada, J. Ito, R. Asahara, M. Nozaki, S. Nakazawa, M. Ishida, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe

2015/11　Research paper (international conference proceedings)

Theoretical study on the identity of positive mobile ions in SiC-MOSFET and their diffusion process

H. Shirakawa, M. Araidai, K. Kamiya, H. Watanabe, K. Shiraishi

2015/10　Research paper (international conference proceedings)

Improvement of SiO2/4H-SiC interface quality by post-oxidation annealing in N2 at high-temperatures

A. Chanthaphan, T. Hosoi, T. Shimura, H. Watanabe

2015/10　Research paper (international conference proceedings)

Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing

A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

2015/10　Research paper (international conference proceedings)

Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices

Y. Katsu, T. Hosoi, Y. Nanen, T. Kimoto, T. Shimura, H. Watanabe

2015/10　Research paper (international conference proceedings)

Origin of Anomalous Positive Charging of Water-adsorbed Thin GeO2 Films Studied by Ambient-pressure XPS

K. Arima, D. Mori, Y. Saito, H. Oka, K. Kawai, T. Hosoi, M. Morita, H. Watanabe, Z. Liu

Program and Exhibition of 16th European Conference on Application of Surface and Interface Analysis　p. 254-254　2015/10

Flatband voltage shift depending on SiO2/SiC interface charges in 4H-SiC MOS capacitors with AlON/SiO2 stacked gate dielectrics

T. Hosoi, S. Azumo, K. Yamamoto, M. Aketa, Y. Kashiwagi, S. Hosaka, H. Asahara, T. Nakamura, T. Shimura, H. Watanabe

2015/09　Research paper (international conference proceedings)

X-ray Talbot-Lau interferometer using lanthanum targets embedded in diamond substrates

A. Yamazaki, N. Morimoto, S. Fujino, Y. Ito, I. Sano, T. Hosoi, H. Watanabe, T. Shimura

2015/09　Research paper (international conference proceedings)

2D x-ray single grating interferometry with embedded metal targets

N. Morimoto, S. Fujino, Y. Ito, A. Yamazaki, I. Sano, T. Hosoi, H. Watanabe, T. Shimura

2015/09　Research paper (international conference proceedings)

Development of single transmission grating Talbot-Lau interferometer with embedded tungsten targets for 30 keV x rays

Y. Ito, N. Morimoto, S. Fujino, A. Yamazaki, I. Sano, T. Hosoi, H. Watanabe, T. Shimura

2015/09　Research paper (international conference proceedings)

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

AIP Advances　Vol. 5　No. 9　2015/09/01　Research paper (scientific journal)

Synchrotron Radiation X-Ray Photoelectron Spectroscopy Study of Interface Reactions in Al/Ti/GaN Ohmic Contacts

M. Nozaki, J. Ito, R. Asahara, S. Nakazawa, M. Ishida, T. Ueda, A. Yoshigoe, Y. Teraoka, T. Hosoi, T. Shimura, H. Watanabe

2015/09　Research paper (international conference proceedings)

Exact evaluation of interface-reaction-limited growth in dry and wet thermal oxidation of 4H-SiC(0001) Si-face surfaces

Takuji Hosoi, Daisuke Nagai, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 54　No. 9　2015/09/01　Research paper (scientific journal)

SiCパワーデバイスの高性能化に向けた酸化膜/SiC界面の評価と制御

渡部 平司

2015/08

SiC-MOS 構造の物理分析と電気特性評価に基づいた界面欠陥の理解

渡部 平司

先進パワー半導体分科会 第１回個別討論会テキスト　2015/08

第一原理計算によるSic界面欠陥発生メカニズム

白石 賢二, 長川 健太, 白川 裕規, 洗平 昌晃, 神谷 克政, 渡部 平司

先進パワー半導体分科会 第１回講演会　2015/08

Theoretical Studies on SiC/SiO2 Interfaces by Computational Sciences(Invited)

K. Shiraishi, K. Chokawa, H. Shirakawa, M. Araidai, K. Kamiya, H. Watanabe

2015/07

ゲルマニウム半導体を基盤とした次世代光電子集積デバイスへの展開 （依頼講演）

渡部 平司

日本真空学会関西支部＆日本表面科学会関西支部合同セミナー2015テキスト　2015/07

Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures

Yuta Fukushima, Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 106　No. 26　2015/06/29　Research paper (scientific journal)

Two dimensional x-ray phase imaging Using single grating interferometer with embedded xray targets

Naoki Morimoto, Sho Fujino, Amane Yamazaki, Yasuhiro Ito, Takuji Hosoi, Heiji Watanabe, Takayoshi Shimura

Optics Express　Vol. 23　No. 13　p. 16582-16588　2015/06/29　Research paper (scientific journal)

Comprehensive study and design of scaled metal/high- k /Ge gate stacks with ultrathin aluminum oxide interlayers

Ryohei Asahara, Iori Hideshima, Hiroshi Oka, Yuya Minoura, Shingo Ogawa, Akitaka Yoshigoe, Yuden Teraoka, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 106　No. 23　2015/06/08　Research paper (scientific journal)

Schottky barrier height modulation at NiGe/Ge interface by phosphorous ion implantation and its application to Ge-based CMOS devices

T. Hosoi, H. Oka, Y. Minoura, T. Shimura, H. Watanabe

The 15th International Workshop on Junction Technology (IWJT2015)　2015/06　Research paper (international conference proceedings)

Development of Advanced SiC- based Power Devices based on Surface and Interface Science (Invited)

H. Watanabe, T. Hosoi

2015/03

Fabrication of high-quality Ge-on-insulator structures by lateral liquid phase epitaxy

T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, H. Watanabe

ECS Transactions　Vol. 69　No. 5　p. 305-311　2015　Research paper (international conference proceedings)

Improving interface quality of 4H-SiC MOS devices with high temperature oxidation process in mass produce furnace

Heng Yu Xu, Qian Yang, Xiao Lei Wang, Xin Yu Liu, Yan Li Zhao, Cheng Zhan Li, Heiji Watanabe

Materials Science Forum　Vol. 821-823　p. 484-487　2015　Research paper (international conference proceedings)

Photoluminescence Study of Band Gap Modulation of GeSn Wires Fabricated by Lateral Liquid-Phase Epitaxy

T. Amamoto, K. Tominaga, K. Kajimura, M. Matsue, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 20th Workshop on Gate Stack Technology and Physics　2015/01

First Principles Study of Proton Diffusion in SiO2 Dielectric Layer of SiC-MOSFET

H. Shirakawa, M. Araidai, K. Kamiya, H. Watanabe, K. Shiraishi

Extended Abstracts of the 20th Workshop on Gate Stack Technology and Physics　2015/01

Understanding of Bias-Temperature Instability due to Mobile Ions in SiC Metal-Oxide-Semiconductor Devices

A. Chanthaphan, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

応用物理学会 薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会アブストラクト集「ゲートスタック研究会 ―材料・プロセス・評価の物理―」（第20回研究会）　2015/01

First Principles Study of SiC/SiO2 Interfaces towards Future Power Devices

K. Shiraishi, K. Chokawa, H. Shirakawa, K. Endo, M. Araidai, K. Kamiya, H. Watanabe

2014 IEEE International Electron Devices Meeting (IEDM)　2014/12　Research paper (international conference proceedings)

Fabrication of GeSn-on-insulator Structure by Utilizing Lateral Liquid-Phase Epitaxy

T. Hosoi, K. Kajimura, K. Tominaga, T. Shimura, H. Watanabe

Abstracts, 45th IEEE Semiconductor Interface Specialists Conference　2014/12　Research paper (international conference proceedings)

Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology

H. Oka, Y. Minoura, R. Asahara, T. Hosoi, T. Shimura, H. Watanabe

Abstracts, 45th IEEE Semiconductor Interface Specialists Conference　2014/12　Research paper (international conference proceedings)

Improved electrical properties of 4H-SiC MOS devices with high temperature oxidation

2014/11

Detection of structural defects in thermally-grown SiO2/SiC by cathodoluminescence

2014/11

Relationship between oxidizing species and oxide growth rate in thermal oxidation on 4H-SiC(0001)

2014/11

Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy

Takuji Hosoi, Yuichiro Suzuki, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 105　No. 17　p. 173502-1-173502-4　2014/10/27　Research paper (scientific journal)

Synchrotron radiation photoemission spectroscopy study of SiO2/4H-SiC(0001) interfaces with NO annealing

T. Hosoi, Y. Nanen, T. Kimoto, A. Yoshigoe, Y. Teraoka, T. Shimura, H. Watanabe

10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014)　2014/09　Research paper (international conference proceedings)

Theoretical studies of carbon related defect generation in SiO2/4H-SiC(0001) interface induced by oxidation

K. Endo, K. Chokawa, H. Shirakawa, M. Araidai, K. Kamiya, T. Hosoi, H. Watanabe, K. Shiraishi

10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014)　2014/09　Research paper (international conference proceedings)

Survey approach for improving interface quality of 4H-SiC MOS devices with high temperature oxidation process in mass produce furnace

H. Xu, Q. Yang, X. Liu, Y. Zhao, C. Li, H. Watanabe

10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014)　2014/09　Research paper (international conference proceedings)

Understanding and engineering of NiGe/Ge junction formed by phosphorous ion implantation after germanidation

Hiroshi Oka, Yuya Minoura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 105　No. 6　p. 062107-1-062107-4　2014/08/11　Research paper (scientific journal)

X-ray Phase Contrast Imaging with a Single Grating Talbot-Lau Interferometer

N. Morimoto, S. Fujino, K. Ohshima, J. Harada, T. Hosoi, H. Watanabe, T. Shimura

International Union of Materials Research Societies- The 15th IUMRS International Conference in Asia 2014（IUMRS-ICA 2014)　2014/08　Research paper (international conference proceedings)

X-ray phase contrast imaging by compact Talbot–Lau interferometer with a single transmission grating

N. Morimoto, S. Fujino, K. Ohshima, J. Harada, T. Hosoi, H. Watanabe, T. Shimura

Optics Letters　Vol. 39　No. 15　p. 4297-4300　2014/07　Research paper (scientific journal)

極薄EOT high-k/Geゲートスタックの熱安定性及び界面特性改善に向けたプロセス設計

淺原 亮平, 細井 卓治, 志村 考功, 渡部 平司

電子情報通信学会 シリコン材料・デバイス(SDM)研究会, 信学技報　Vol. 114　No. 88　p. 1-5　2014/06

Schottky Barrier Height Reduction of NiGe/Ge Junction by P Ion Implantation for Metal Source/Drain Ge CMOS Devices

H. Oka, Y. Minoura, T. Hosoi, T. Shimura, H. Watanabe

The 2014 International Meeting for Future of Electron Devices, Kansai　2014/06　Research paper (international conference proceedings)

Sub-1-nm EOT Schottky Source/Drain Germanium CMOS Technology with Low-temperature Self-aligned NiGe/Ge Junctions

T. Hosoi, Y. Minoura, R. Asahara, H. Oka, T. Shimura, H. Watanabe

2014 IEEE Silicon Nanoelectronics Workshop (SNW)　2014/06　Research paper (international conference proceedings)

Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics

Atthawut Chanthaphan, Takuji Hosoi, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 104　No. 12　p. 122105-1-122105-5　2014/03/24　Research paper (scientific journal)

Controlled charged amino acids of Ti-binding peptide forsurfactant-free selective adsorption

M. Fukuta, B. Zheng, M. Uenumab, N. Okamoto, Y. Uraoka, I. Yamashita, H. Watanabe

Colloids and Surfaces B: Biointerfaces　2014/03　Research paper (scientific journal)

Development of Multiline Embedded X-ray Targets for Compact Talbot-Lau X-ray Interferometer

N. Morimoto, S. Fujino, K. Ohshima, J. Harada, T. Hosoi, H. Watanabe, T. Shimura

Program & Abstracts of International Workshop on Atomically Controlled Fabrication Technology　2014/02

Bias-temperature instability of SiC-MOS devices induced by unusual generation of mobile ions in thermal oxides

A. Chanthaphan, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Program & Abstracts of International Workshop on Atomically Controlled Fabrication Technology　2014/02

Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy

Masahiro Matsue, Yuhsuke Yasutake, Susumu Fukatsu, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 104　No. 3　p. 031106-1-031106-4　2014/01/20　Research paper (scientific journal)

Insights into ultraviolet-induced electrical degradation of thermally grown SiO2/4H-SiC(0001) interface

Daisuke Ikeguchi, Takuji Hosoi, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 104　No. 1　p. 012107-1-012107-4　2014/01/06　Research paper (scientific journal)

Ambient-pressure XPS study of GeO2/Ge(100) and SiO2/Si(100) at controlled relative humidity

K. Arima, Y. Kawai, Y. Minoura, Y. Saito, D. Mori, H. Oka, K. Kawai, T. Hosoi, Z. Liu, H. Watanabe, M. Morita

ECS Transactions　Vol. 64　No. 8　p. 77-82　2014　Research paper (international conference proceedings)

Phosphorous ion implantation into NiGe layer for Ohmic contact formation on n-type Ge

Yuya Minoura, Hiroshi Oka, Takuji Hosoi, Jin Matsugaki, Shin-Ichiro Kuroki, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 53　No. 8　2014　Research paper (international conference proceedings)

Retarded oxide growth on 4H-SiC(0001) substrates due to sacrificial oxidation

Takuji Hosoi, Yusuke Uenishi, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 778-780　p. 562-565　2014　Research paper (international conference proceedings)

Degradation of SiO2/SiC interface properties due to mobile ions intrinsically generated by high-temperature hydrogen annealing

Atthawut Chanthaphan, Takuji Hosoi, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 778-780　p. 541-544　2014　Research paper (international conference proceedings)

X-ray phase contrast imaging by compact Talbot-Lau interferometer without absorption grating

N. Morimoto, S. Fujino, K. Ohshima, J. Harada, T. Hosoi, H. Watanabe, T. Shimura

International Workshop on X-ray and Neutron Phase Imaging with Gratings (XNPIG2014)　2014/01　Research paper (international conference proceedings)

Design of compact Talbot-Lau interferometer with embedded X-ray targets disregarding Talbot distance

S. Fujino, N. Morimoto, K. Ohshima, J. Harada, T. Hosoi, H. Watanabe, T. Shimura

International Workshop on X-ray and Neutron Phase Imaging with Gratings (XNPIG2014)　2014/01　Research paper (international conference proceedings)

Photoluminescence Study of Band Gap Modulation of Ge Wires Fabricated by Lateral Liquid-Phase Epitaxy

K. Kajimura, M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 19th Workshop on Gate Stack Technology and Physics　2014/01

Ohmic Contact Formation on n-Ge by P Ion Implantation into NiGe/Ge Junction

H. Oka, Y. Minoura, T. Hosoi, J. Matsugaki, S. Kuroki, T. Shimura, H. Watanabe

Extended Abstracts of the 19th Workshop on Gate Stack Technology and Physics　2014/01

High-k/Ge Gate Stack with an Extremely Thin-EOT by Controlling Interface Reaction Using Ultrathin AlOx Interlayer

R. Tanaka, I. Hideshima, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 19th Workshop on Gate Stack Technology and Physics　2014/01

Comparison of Wetting Properties between GeO2/Ge and SiO2/Si Revealed by In-situ XPS

Kenta Arima, Yoshie Kawai, Yuya Minoura, Yusuke Saito, Daichi Mori, Kentaro Kawai, Takuji Hosoi, Mizuho Morita, Heiji Watanabe, Zhi Liu

Extended Abstracts of the 19th Workshop on Gate Stack Technology and Physics　2014/01

Development of Advanced SiC-MOS Power Devices based on Surface and Interface Analysis (Invited)

Heiji Watanabe

Reports on Topical Meeting of the Vacuum Society of Japan, 2013-4　2013/12

Interface engineering SiC-MOS devices using HfO2 interfacial layer

2013/12

Improved BTI characteristics of SiC MOS devices by using AlON/thermal SiO2 dielectrics

2013/12

Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy –Material and strain engineering toward CMOS compatible group-Ⅳ photonics-

M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, H. Watanabe

Abstracts, 44th IEEE Semiconductor Interface Specialists Conference　2013/12　Research paper (international conference proceedings)

High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling Interface Reaction Using Ultrathin AlOx Interlayer

T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, H. Watanabe

Abstracts, 44th IEEE Semiconductor Interface Specialists Conference　2013/12　Research paper (international conference proceedings)

Electrical and physical properties of SiO2 gate dielectrics grown on 4H-SiC (Invited)

T. Hosoi, Y. Uenishi, A. Chanthaphan, D. Ikeguchi, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe

The 8th international conference on advanced materials upon the proven concept and continues the tradition of its seven predecessors (THERMEC2013)　2013/12　Research paper (international conference proceedings)

Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay

T. Hosoi, Y. Suzuki, H. Nishikawa, M. Matsue, T. Shimura, H. Watanabe

Extended Abstracts of 2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013)　2013/11　Research paper (international conference proceedings)

Phosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge

Y. Minoura, T. Hosoi, J. Matsugaki, S. Kuroki, T. Shimura, H. Watanabe

Extended Abstracts of 2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013)　2013/11　Research paper (international conference proceedings)

Interaction of Water Vapor with GeO2/Ge(100) Revealed by In Situ XPS under Controlled Relative Humidity

K. Arima, A. Mura, I. Hideshima, T. Hosoi, H. Watanabe, Z. Liu

Abstracts of 15th European Conference on Applications of Surface and Interface Analysis　2013/10

Retarded Oxide Growth on 4H-SiC(0001) Substrates Due to Sacrificial Oxidation

T. Hosoi, Y. Uenishi, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe

International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)　2013/10　Research paper (international conference proceedings)

Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing

A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe

International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)　2013/10　Research paper (international conference proceedings)

Suppression of Mobile Ion Diffusion with AlON/SiO2 Stacked Gate Dielectrics for Improving Bias-Temperature Instability in SiC-MOS Devices

A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe

International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)　2013/10　Research paper (international conference proceedings)

Insight of Selective Adsorption Mechanism of Titanium-binding Peptide

M. Fukuta, B. Zheng, M. Uenuma, I. Yamashita, Y. Uraoka, H. Watanabe

2013 JSAP-MRS Joint Symposia　2013/09　Research paper (international conference proceedings)

Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 103　No. 3　2013/07/15　Research paper (scientific journal)

T. Yamamoto, S. Ogawa, T. Hosoi, T. Shimura, and H. Watanabe

Characterization of, Interface Structure of, Metal Gate, High-k Gate Dielectric

The 77th Symposium on Semiconductors and Integrated Circuits Technology　2013/07

Nanoscale Interaction of Water with Germanium Surfaces: Wetting, Etching and Machining properties

Kenta Arima, Kentaro Kawai, Takuji Hosoi, Junichi Uchikoshi, Zhi Liu, Heiji Watanabe, Mizuho Morita

Program and Abstract of Collaborative Conference on 3D & Materials Research (CC3DMR) 2013　2013/06

Implementation of High-k Gate Dielectrics in Silicon Carbide Power MOS Devices (Invited)

H. Watanabe

2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2013)　2013/06　Research paper (international conference proceedings)

熱酸化SiC-MOS界面物性の理解と制御 (Invited)

渡部 平司

日本結晶成長学会ナノ構造・エピタキシャル 成長分科会主催SiC結晶成長講演会　2013/06

Implementation of High-k Gate Dielectrics in SiC Power MOSFET (Invited)

T. Hosoi, S. Azumo, Y. Kashiwagi, S. Hosaka, R. Nakamura, Y. Nakano, H. Asahara, T. Nakamura, T. Kimoto, T. Shimura, H. Watanabe

IEICE Technical Committee on Silicon Device and Materials (SDM)　2013/06

Germanide Formation in Metal/High-k/Ge Gate Stacks

T. Hosoi, I. Hideshima, Y. Minoura, R. Tanaka, A. Yoshigoe, Y. Teraoka, T. Shimura, H. Watanabe

IEICE Technical Committee on Silicon Device and Materials (SDM)　2013/06

Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices (Invited)

H. Watanabe, A. Chanthaphan, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura

IEICE Technical Committee on Silicon Device and Materials (SDM)　2013/06

Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions

Atthawut Chanthaphan, Takuji Hosoi, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 102　No. 9　2013/03/04　Research paper (scientific journal)

Electrical detection of surface plasmon resonance phenomena by a photoelectronic device integrated with gold nanoparticle plasmon antenna

Tatsuya Hashimoto, Yurie Fukunishi, Bin Zheng, Yukiharu Uraoka, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 102　No. 8　2013/02/25　Research paper (scientific journal)

The adsorption mechanism of titanium-binding ferritin to amphoteric oxide.

Megumi Fukuta, Nobuyuki Zettsu, Ichiro Yamashita, Yukiharu Uraoka, Heiji Watanabe

Colloids and surfaces. B, Biointerfaces　Vol. 102　p. 435-40　2013/02/01　Research paper (scientific journal)

Hard x-ray phase contrast imaging using a tabletop Talbot-Lau interferometer with multiline embedded x-ray targets

Takayoshi Shimura, Naoki Morimoto, Sho Fujino, Takaharu Nagatomi, Keni-Chi Oshima, Jimpei Harada, Kazuhiko Omote, Naohisa Osaka, Takuji Hosoi, Heiji Watanabe

Optics Letters　Vol. 38　No. 2　p. 157-159　2013/01/15　Research paper (scientific journal)

Water growth on GeO2/Ge(100) stack and its effect on the electronic properties of GeO2

Atsushi Mura, Iori Hideshima, Zhi Liu, Takuji Hosoi, Heiji Watanabe, Kenta Arima

Journal of Physical Chemistry C　Vol. 117　No. 1　p. 165-171　2013/01/10　Research paper (scientific journal)

Crystallization of amorphous Ge thin film using Cu nanoparticle synthesized and delivered by ferritin

Mutsunori Uenuma, Bin Zheng, Kosuke Bundo, Masahiro Horita, Yasuaki Ishikawa, Heiji Watanabe, Ichiro Yamashita, Yukiharu Uraoka

Journal of Crystal Growth　Vol. 382　p. 31-35　2013　Research paper (scientific journal)

Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties

Takuji Hosoi, Iori Hideshima, Ryohei Tanaka, Yuya Minoura, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura, Heiji Watanabe

Microelectronic Engineering　Vol. 109　p. 137-141　2013　Research paper (scientific journal)

Dielectric properties of thermally grown SiO2 on 4H-SiC(0001) substrates

Takuji Hosoi, Yusuke Uenishi, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 740-742　p. 605-608　2013　Research paper (international conference proceedings)

Novel approach for improving interface quality of 4H-SiC MOS devices with UV irradiation and subsequent thermal annealing

Heiji Watanabe, Daisuke Ikeguchi, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura

Materials Science Forum　Vol. 740-742　p. 741-744　2013　Research paper (international conference proceedings)

AlONゲート絶縁膜導入によるSiCパワーMOSFETの高性能化及び信頼性向上

細井 卓治, 東雲 秀司, 柏木 勇作, 保坂 重敏, 中村 亮太, 箕谷 周平, 中野 佑紀, 浅原 浩和, 中村 孝, 木本 恒暢, 志村 考功, 渡部 平司

電子情報通信学会 シリコン材料・デバイス研究会（SDM）　2013/01

Effect of Water Adsorption on GeO2/Ge Structures Studied by In-situ XPS under Controlled Relative Humidity

Kenta Arima, Atsushi Mura, Iori Hideshima, Takuji Hosoi, Heiji Watanabe, Zhi Liu

Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics　2013/01

Evaluation of the Carrier Mobility of Ge-on-Insulator MOSFET Formed by Lateral Liquid-Phase Epitaxy

M. Matsue, Y. Suzuki, H. Nishikawa, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics　2013/01

Interface Engineering between Metal Electrode and GeO2 Dielectric for Future Ge-Based Metal-Oxide-Semiconductor Technologies

S. Ogawa, I. Hideshima, Y. Minoura, T. Yamamoto, A. Yasui, H. Miyata, K. Kimura, T. Hosoi, T. Shimura, H. Watanabe

応用物理学会 薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会アブストラクト集「ゲートスタック研究会 ―材料・プロセス・評価の物理―」（第１８回研究会）　2013/01

Unusual Generation and Elimination of Mobile Ions in Thermally Grown SiO2 on 4H-SiC(0001)

A. Chanthaphan, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics　2013/01

Gate Stack Technology for High Performance Ge MOSFETs with Ultrathin GeON Gate Dielectrics

Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 18th Workshop on Gate Stack Technology and Physics　2013/01

Effect of Water Growth on Quality of GeO2/Ge Revealed by in-situ XPS

Kenta Arima, Atsushi Mura, Iori Hideshima, Takuji Hosoi, Heiji Watanabe, Zhi Liu

Symposium Program of SSNS'13　2013/01

The adsorption mechanism of titanium-binding ferritin to amphoteric oxide

M. Fukuta, N. Zettsu, I. Yamashita, Y. Uraoka, H. Watanabe

Colloid and Surfaces B: Biointerfaces　2013/01　Research paper (scientific journal)

Fundamental Aspects of Silicon Carbide Oxidation

H. Watanabe, T. Hosoi

Physics and Technology of Silicon Carbide Devices, ISBN 978-953-51-0917-4　2012/12

Evaluation of Carrier Mobility Characteristics of Ge-on-Insulator MOSFET Formed by Lateral Liquid-Phase Epitaxy

M. Matsue, Y. Suzuki, H. Nishikawa, T. Hosoi, T. Shimura, H. Watanabe

8th Handai Nanoscience and nanotechnology International Symposium　2012/12

Improvement of Ultrathin GeON/Ge Interface Properties for High-mobility Ge MOSFETs

I. Hideshima, Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, H. Watanabe

8th Handai Nanoscience and nanotechnology International Symposium　2012/12

Mobile Ions Generated in Thermal SiO2 on SiC by Hydrogen Passivation and Its Impact on Interface Property

T. Hosoi, A. Chanthaphan, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe

The 43rd IEEE Semiconductor Interface Specialists Conference　2012/12　Research paper (international conference proceedings)

Implementation of GeON Gate Dielectrics for Dual-Channel Ge CMOS Technology

Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, H. Watanabe

The 43rd IEEE Semiconductor Interface Specialists Conference　2012/12　Research paper (international conference proceedings)

Al-inserted TiN Gate Electrodes with Low-Pressure Oxidation for Effective Work Function Control of Gate-First Poly-Si/TiN/HfSiO Stacks

K. Chikaraishi, T. Minami, N. Kitano, T. Seino, N. Yamaguchi, T. Nakagawa, T. Hosoi, T. Shimura, H. Watanabe

The 43rd IEEE Semiconductor Interface Specialists Conference　2012/12　Research paper (international conference proceedings)

Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)

Takuji Hosoi, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Current Applied Physics　Vol. 12　No. 3　p. S79-S82　2012/12　Research paper (scientific journal)

Synchrotron X-ray topography of supercritical-thickness strained silicon-on-insulator wafers for crystalline quality evaluation and electrical characterization using back-gate transistors

T. Shimura, D. Shimokawa, T. Matsumiya, N. Morimoto, A. Ogura, S. Iida, T. Hosoi, H. Watanabe

Current Applied Physics　Vol. 12　No. 3　p. S69-S74　2012/12　Research paper (scientific journal)

Effective work function control of metal inserted poly-Si electrodes on HfSiO dielectrics by in-situ oxygen treatment of metal surface

Naomu Kitano, Keisuke Chikaraishi, Hiroaki Arimura, Takuji Hosoi, Takayoshi Shimura, Takashi Nakagawa, Heiji Watanabe

Current Applied Physics　Vol. 12　No. 3　p. S83-S86　2012/12　Research paper (scientific journal)

Al2O3/GeO2 stacked gate dielectrics formed by post-deposition oxidation of ultrathin metal Al layer directly grown on Ge substrates

Iori Hideshima, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Current Applied Physics　Vol. 12　No. 3　p. S75-S78　2012/12　Research paper (scientific journal)

Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices - Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Heiji Watanabe, Katsuhiro Kutsuki, Atsushi Kasuya, Iori Hideshima, Gaku Okamoto, Shoichiro Saito, Tomoya Ono, Takuji Hosoi, Takayoshi Shimura

Current Applied Physics　Vol. 12　No. 3　p. S10-S19　2012/12　Research paper (scientific journal)

High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy

Yuichiro Suzuki, Shimpei Ogiwara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 101　No. 20　2012/11/12　Research paper (scientific journal)

Interface engineering between metal electrode and GeO2 dielectric for future Ge-based metal-oxide-semiconductor technologies

Shingo Ogawa, Iori Hideshima, Yuya Minoura, Takashi Yamamoto, Asami Yasui, Hiroaki Miyata, Kosuke Kimura, Toshihiko Ito, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 101　No. 20　2012/11/12　Research paper (scientific journal)

Fabrication of High-quality SiGe-on-Insulator and Ge-on-Insulator Structures by Rapid Melt Growth (Invited)

T. Shimura, C. Yoshimoto, T. Hashimoto, S. Ogiwara, Y. Suzuki, T. Hosoi, H. Watanabe

The Internationaｌ Symposium on Visualization in Joining & Welding Science through Advanced Measurements and Simulation (Visual-JW2012)　2012/11　Research paper (international conference proceedings)

Fabrication of Ge-on-insulator structure by lateral liquid-phase epitaxy and its electrical characterization using back-gate transistors

T. Shimura, Y. Suzuki, S. Ogiwara, T. Hosoi, H. Watanabe

The 6th International Symposium on Advanced Science and Technology of Silicon Materials　2012/11　Research paper (international conference proceedings)

Investigation of relative permittivity of thermal oxides on 4H-SiC

2012/11

Mechanism of UV-induced defect generation in thermally grown SiO2/SiC structures

2012/11

Elimination of mobile ions in thermal oxide grown on 4H-SiC by utilizing bias-temperature stress

2012/11

熱酸化SiO2/SiC 界面原子構造と界面電気特性の評価

渡部平司, 細井卓治

表面科学　2012/11

High-k ゲートスタック技術の進展と最新動向

渡部平司, 細井卓治

電子情報通信学会誌　2012/11

Germanium Nitride Interface Layer for High-k/Ge Gate Stacks

T. Hosoi, G. Okamoto, K. Kutsuki, I. Hideshima, A. Yoshigoe, Y. Teraoka, T. Shimura, H. Watanabe

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Evaluation of Carrier Mobility in Local GOI Structures Formed by Lateral Liquid-Phase Epitaxy

Y. Suzuki, S. Ogiwara, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Application of Multiline Embedded X-ray Targets to X-ray Talbot-Lau Interferometer

N. Morimoto, S. Fujino, T. Nagatomi, K. Ohshima, J. Harada, K. Omote, N. Osaka, T. Hosoi, H. Watanabe, T. Shimura

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

High-quality Fully Relaxed SiGe Layers Fabricated on Silicon-on-Insulator Wafers by Rapid Melt Growth

T. Shimura, S. Ogiwara, C. Yoshimoto, T. Hosoi, H. Watanabe

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Improvement of Thermal SiO2/4H-SiC Interface by UV Irradiation and Subsequent High Temperature Annealing

D. Ikeguchi, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Interface Engineering between Metal Electrode and GeO2 Dielectric for Future Ge-based Metal-Oxide-Semiconductor Technologies

S. Ogawa, I. Hideshima, Y. Minoura, T. Yamamoto, A. Yasui, H. Miyata, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Process Optimization of GeON/Ge Gate Stacks for High-mobility Ge-based CMOS Devices

Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Advanced Poly-Si/TiN Gate Electrode for Gate-first Metal/high-k PMOSFET

K. Chikaraishi, T. Minami, N. Kitano, T. Seino, N. Yamaguchi, T. Nakagawa, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Gate Stack Technology for Next-Generation Green Electronics

H. Watanabe, T. Shimura, T. Hosoi

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Elimination of Mobile Ions in Thermal Oxide of SiC MOS Devices

A. Chanthaphan, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Fabrication and Evaluation of Photoelectronic Devices Integrated with Gold Nanoparticle Plasmon Antenna

T. Hashimoto, Y. Fukunishi, Z. Bin, Y. Uraoka, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fifth International Symposium on Atomically Controlled Fabrication Technology　2012/10

Fabrication of high-quality GOI and SGOI structures by rapid melt growth method - Novel platform for high-mobility transistors and photonic devices - (Invited)

H. Watanabe, Y. Suzuki, S. Ogiwara, N. Kataoka, T. Hashimoto, T. Hosoi, T. Shimura

Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiMe 2012)　2012/10　Research paper (international conference proceedings)

SiCパワーデバイス開発と評価技術 -高性能 SiC-MOSFET 実現に向けた熱酸化膜形成過程と MOS界面特性の理解-

渡部 平司

応用物理学会 薄膜・表面物理分科会 News Letter -半導体SiCの基礎と応用-　2012/09

Characterization of multicrystalline Si in solar modules by synchrotron white x-ray microbeam diffraction

T. Shimura, T. Matsumiya, N. Morimoto, S. Fujino, T. Hosoi, K. Kajiwara, J. Chen, T. Sekiguchi, H. Watanabe

Abstracts of 11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging (XTOP 2012)　2012/09　Research paper (international conference proceedings)

Effective Work Function Control of MIPS/High-k Gate Stacks by Al-Incorporation and in situ Low-Pressure Oxidation of TiN Surface

K. Chikaraishi, T. Minami, N. Kitano, T. Seino, N. Yamaguchi, T. Nakagawa, T. Hosoi, T. Shimura, H. Watanabe

Program and Abstrats of Plenary, Forums, Somiya Award and Special Lecture, IUMRS-ICEM 2012　2012/09　Research paper (international conference proceedings)

Rapid Melt Growth of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Substrates

T. Shimura, S. Ogiwara, Y. Suzuki, C. Yoshimoto, T. Hosoi, H. Watanabe

Program and Abstrats of Plenary, Forums, Somiya Award and Special Lecture, IUMRS-ICEM 2012　2012/09　Research paper (international conference proceedings)

Development of multiline embedded X-ray targets for X-ray phase contrast imaging

N. Morimoto, S. Fujino, T. Nagatomi, K. Ohshima, J. Harada, K. Omote, N. Osaka, T. Hosoi, H. Watanabe, T. Shimura

Abstracts of 11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging (XTOP 2012)　2012/09　Research paper (international conference proceedings)

Dielectric properties of thermally grown SiO2 on 4H-SiC (0001) substrates

T. Hosoi, Y. Uenishi, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe

9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)　2012/09　Research paper (international conference proceedings)

Novel approach for improving interface quality of 4H-SiC MOS devices with UV irradiation and subsequent thermal annealing

H. Watanabe, D. Ikeguchi, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura

9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)　2012/09　Research paper (international conference proceedings)

Practical protein removal using atmospheric-pressure helium plasma for densely packed gold nanoparticle arrays assembled by ferritin-based encapsulation/transport system

Tatsuya Hashimoto, Nobuyuki Zettsu, Bin Zheng, Megumi Fukuta, Ichiro Yamashita, Yukiharu Uraoka, Heiji Watanabe

Applied Physics Letters　Vol. 101　No. 7　2012/08/13　Research paper (scientific journal)

Fabrication of Au / Pt Binary-Component Metal Nanodot Array by Electrostatistically-Driven Colloidal Self-Assembly

R. Sumi, N. Zettsu, T. Ueno, T. Hosoi, H. Watanabe, N. Saito

International Union of Materials Research Society - International Conference in Asia – 2012 (IUMRS-ICA-2012)　2012/08　Research paper (international conference proceedings)

Investigation of unusual mobile ion effects in thermally grown SiO 2 on 4H-SiC(0001) at high temperatures

Atthawut Chanthaphan, Takuji Hosoi, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 100　No. 25　2012/06/18　Research paper (scientific journal)

Gate Stack Technologies for Silicon Carbide Power MOS Devices (Invited)

T. Hosoi, T. Kirino, Y. Uenishi, D. Ikeguchi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe

2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)　2012/06　Research paper (international conference proceedings)

Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks

T. Hosoi, Y. Odake, H. Arimura, K. Chikaraishi, N. Kitano, T. Shimura, H. Watanabe

IEICE Technical Committee on Silicon Device and Materials (SDM)　Vol. 112　No. 92　p. 43-46　2012/06

High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics

Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, H. Watanabe

IEICE Technical Committee on Silicon Device and Materials (SDM)　2012/06

Insight into Bias-temperature Instability of 4H-SiC MOS Devices with Thermally Grown SiO2 Dielectrics

Atthawut Chanthaphan, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2012 MRS Spring Meeting　2012/04　Research paper (international conference proceedings)

Comprehensive study of the X-ray photoelectron spectroscopy peak shift of La-incorporated Hf oxide for gate dielectrics

Takashi Yamamoto, Shingo Ogawa, Jun-Ichi Tsuji, Koji Kita, Katsunori Tagami, Tsuyoshi Uda, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 51　No. 4　2012/04　Research paper (scientific journal)

放射光X 線トポグラフィによる極薄ひずみSi 層の結晶性評価

志村考功, 細井卓治, 渡部平司

日本結晶学会誌　2012/03

Compact X-ray Talbot-Lau interferometer with multiline embedded X-ray targets

N. Morimoto, S. Fujino, T. Nagatomi, K. Ohshima, J. Harada, K. Omote, N. Osaka, T. Hosoi, T. Shimura, H. Watanabe

Program of International Workshop on X-ray and Neutron Phase Imaging with Gratings　2012/03　Research paper (international conference proceedings)

In situ XPS of Adsorbed Water/GeO₂/Ge(100) Structures under Controlled Relative Humidity

Arima Kenta, Mura Atsushi, Hideshima Iori, Hosoi Takuji, Watanabe Heiji, Liu Zhi

Abstract of annual meeting of the Surface Science of Japan　Vol. 32　p. 75-75　2012

Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka, Ryota Nakamura, Shuhei Mitani, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto, Takayoshi Shimura, Heiji Watanabe

Technical Digest - International Electron Devices Meeting, IEDM　2012　Research paper (international conference proceedings)

Fabrication of high-quality goi and sgoi structures by rapid melt growth method - Novel platform for high-mobility transistors and photonic devices - Novel p

Heiji Watanabe, Yuichiro Suzuki, Shimpei Ogiwara, Nobuaki Kataoka, Tatsuya Hashimoto, Takuji Hosoi, Takayoshi Shimura

ECS Transactions　Vol. 50　No. 4　p. 261-266　2012　Research paper (international conference proceedings)

Analysis of lattice distortion in multicrystalline silicon for photovoltaic cells by synchrotron white x-ray micro beam diffraction

Takayoshi Shimura, Takuya Matsumiya, Naoki Morimoto, Takuji Hosoi, Kentaro Kajiwara, Jun Chen, Takashi Sekiguchi, Heiji Watanabe

Materials Science Forum　Vol. 725　p. 153-156　2012　Research paper (international conference proceedings)

Oxygen-induced high-k degradation in TiN/HfSiO gate stacks

Takuji Hosoi, Yuki Odake, Keisuke Chikaraishi, Hiroaki Arimura, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe

2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012　2012　Research paper (international conference proceedings)

Impact of UV irradiation on thermally grown 4H-SiC MOS devices

Daisuke Ikeguchi, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 717-720　p. 765-768　2012　Research paper (international conference proceedings)

Synchrotron radiation photoelectron spectroscopy study of thermally grown oxides on 4H-SiC(0001) Si-face and (000-1) C-face substrates

Heiji Watanabe, Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Atthawut Chanthaphan, Akitaka Yoshigoe, Yuden Teraoka, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura

Materials Science Forum　Vol. 717-720　p. 697-702　2012　Research paper (international conference proceedings)

Impact of Si diffusion barrier formed on TiN surface by in-situ oxygen treatment process for advanced gate-first metal/high-k stacks

N. Kitano, K. Chikaraishi, H. Arimura, T. Hosoi, T. Shimura, T. Seino, H. Watanabe, T. Nakagawa

ECS Transactions　Vol. 45　No. 3　p. 145-149　2012　Research paper (international conference proceedings)

Metal-nanoparticle-induced crystallization of amorphous Ge film using ferritin

Mutsunori Uenuma, Bin Zheng, Takanori Imazawa, Masahiro Horita, Takashi Nishida, Yasuaki Ishikawa, Heiji Watanabe, Ichiro Yamashita, Yukiharu Uraoka

Applied Surface Science　2012/01　Research paper (scientific journal)

Evaluation of the Electrical Properties of Single-Crystalline Ge-on-Insulator Structures Formed by Lateral Liquid-Phase Epitaxy

Yuichiro Suzuki, Shimpei Ogiwara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of the 17th Workshop on Gate Stack Technology and Physics　2012/01

Residual Order in the Thermally Oxidized Thin Film on Ge Substrates

Takayoshi Shimura, Daisuke Shimokawa, Takuya Matsumiya, Takuji Hosoi, Heiji Watanabe

Extended Abstracts of the 17th Workshop on Gate Stack Technology and Physics　2012/01

Water Growth on GeO2 Surface Revealed by In-situ XPS under Controlled Relative Humidity

Kenta Arima, Atsushi Mura, Iori Hideshima, Takuji Hosoi, Heiji Watanabe, Zhi Liu

Extended Abstracts of the 17th Workshop on Gate Stack Technology and Physics　2012/01

Effective Work Function Control of Poly-Si/TiN/HfSiO/SiO2 Gate Stacks by in situ Low-pressure Oxidation of TiN Electrode Surface

Keisuke Chikaraishi, Naomu Kitano, Hiroaki Arimura, Takuji Hosoi, Takayoshi Shimura, Takashi Nakagawa, Heiji Watanabe

Extended Abstracts of the 17th Workshop on Gate Stack Technology and Physics　2012/01

Impact of interface defect passivation on conduction band offset at SiO 2/4H-SiC interface

Takuji Hosoi, Takashi Kirino, Atthawut Chanthaphan, Yusuke Uenishi, Daisuke Ikeguchi, Akitaka Yoshigoe, Yuden Teraoka, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 717-720　p. 721-724　2012　Research paper (international conference proceedings)

Synchrotron radiation photoelectron spectroscopy study of thermally grown oxides on 4H-SiC(0001) Si-face and (000-1) C-face substrates

Heiji Watanabe, Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Atthawut Chanthaphan, Akitaka Yoshigoe, Yuden Teraoka, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura

Materials Science Forum　Vol. 717-720　p. 697-702　2012　Research paper (international conference proceedings)

Control of selective adsorption behavior of Ti-binding ferritin on a SiO 2 substrate by atomic-scale modulation of local surface charges

Tatsuya Hashimoto, Kentaro Gamo, Megumi Fukuta, Bin Zheng, Nobuyuki Zettsu, Ichiro Yamashita, Yukiharu Uraoka, Heiji Watanabe

Applied Physics Letters　Vol. 99　No. 26　2011/12/26　Research paper (scientific journal)

Investigation of UV-induced electrical defects in thermally grown SiO2/SiC structures

D.Ikebuchi, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

2011/12

Bias temperatude instability in 4H-SiC metal-oxide-semiconductor devices

A. Chanthaphan, T. Kirino, Y. Uenishi, D. Ikeguchi, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

2011/12

Drastic degradation in dielectric properties of TiN/HfSiO/SiO2 gate stacks due to Hf uptake property of TiN electrodes

T. Hosoi, H. Arimura, Y. Odake, N. Kitano, T. Shimura, H. Watanabe

Abstracts, 42nd IEEE Semiconductor Interface Specialists Conference　2011/12　Research paper (international conference proceedings)

High-mobility Ge-on-insulator p-channel MOSFETs fabricated by lateral liquid-phase epitaxy

Y. Suzuki, S. Ogiwara, T. Hosoi, T. Shimura, H. Watanabe

Abstracts, 42nd IEEE Semiconductor Interface Specialists Conference　2011/12　Research paper (international conference proceedings)

High-mobility Ge MOSFETs with GeON gate dielectrics formed by plasma nitridation of ultrathin GeO2

A. Kasuya, K. Kutsuki, I. Hideshima, Y. Minoura, T. Hosoi, T. Shimura, H. Watanabe

Program and Abstracts of 7th Handai Nanoscience and nanotechnology International Symposium　2011/11

Characterization of Grain Boundaries and Lattice Strain in Multicrystalline Si for Solar Cells by Synchrotron White X-ray Micro-beam Diffraction Method

T. Matsumiya, N. Morimoto, S. Fujino, T. Hosoi, T. Shimura, K. Kajiwara, J. Chen, T. Sekiguchi, H. Watanabe

Program and Abstracts of 7th Handai Nanoscience and nanotechnology International Symposium　2011/11

A protein removal technique with atmospheric-pressure He plasma for fabricating plasmonic device using porter-protein system

Yurie Fukunishi, Tatsuya Hashimoto, Zheng Bin, Megumi Fukuta, Nobuyuki Zettsu, Ichiro Yamashita, Yukiharu Uraoka, Heiji Watanabe

Program and Abstracts of 7th Handai Nanoscience and nanotechnology International Symposium　2011/11

High-Quality Al2O3/GeO2 Gate Dielectrics Formed by Post-Deposition Oxidation of Ultrathin Metal Al Layer on Ge Substrates

Iori Hideshima, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Abstracts of 15th International Conference on Thin Films (ICTF-15)　2011/11　Research paper (international conference proceedings)

Investigation of Mobile Ion Generation in Thermal Oxide of 4H-SiC(0001) MOS Devices with High-Temperature Hydrogen Annealing

Atthawut Chanthaphan, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Abstracts of 15th International Conference on Thin Films (ICTF-15)　2011/11　Research paper (international conference proceedings)

Modulation of Conduction Band Offset at SiO2/4H-SiC Interface Depending on Interface Defect Passivation Treatment

T. Hosoi, T. Kitano, A. Chanthaphan, Y. Uenishi, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Two-Dimensional Strain Measurement of Strained Silicon Wafer by Synchrotron X-ray Topography and its Electrical Characterization Using Back-Gate Transistors

T. Shimura, D. Shimokawa, T. Matsumiya, N. Morimoto, A. Ogura, T. Hosoi, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Effective Work Function Control of Metal Inserted Poly-Si Electroodes on HfSiO Dielectrics by In-situ Oxygen Treatment Process

N. Kitano, K. Chikaraishi, H. Arimura, T. Hosoi, T. Shimura, T. Nakagawa, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Unusual Impurity Absorbability of GeO2 in GeO2/Ge Stacks

S. Ogawa, T. Suda, T. Yamamoto, K. Kutsuki, I. Hideshima, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Drastic Degradation in Dielectric Properties of TiN/HfSiO/SiO2 Stacks due to Hf Uptake Property of TiN Electrodes

K. Chikaraishi, H. Arimura, Y. Odake, N. Kitano, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Al-based High-k/Ge Gate Stacks Fabricated by Post-Deposition Oxidation of Ultrathin Al Layer on Ge Substrates

I. Hideshima, A. Kasuya, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Investigation of UV-Induced Electrical Defects in Thermally Grown 4H-SiC MOS Devices

D. Ikeguchi, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Flatband Voltage Instability Due to Mobile Ions in 4H-SiC Metal-Oxide-Semiconductor Devices

A. Chanthaphan, T. Kirino, Y. Uenishi, D. Ikeguchi, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

High-Quality Single-Crystalline Ge-on-Insulator P-Channel MOSFETs Formed by Lateral Liquid-Phase Epitaxy

T. Suzuki, S. Ogiwara, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Plasmonic Property of High-density Gold Nanoparticle Monolayer Arranged Using Ferritin Protein-base Encapsulation/transport System

T. Hashimoto, Z. Bin, M. Fukuta, N. Zettsu, K. Gamo, Y. Fukunishi, I.Yamashita, T. Uraoka, H. Watanabe

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Fabrication of High-quality GOI and SGOI Structures by Rapid Melt Growth Method

H. Watanabe, C. Yoshimoto, T. Hashimoto, S. Ogiwara, Y. Suzuki, T. Hosoi, T. Shimura

Extended Abstracts of Fourth International Symposium on Atomically Controlled Fabrication Technology　2011/11

Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film

Hiroaki Arimura, Yuki Odake, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 99　No. 14　2011/10/03　Research paper (scientific journal)

Insight into unusual impurity absorbability of GeO2 in GeO 2/Ge stacks

Shingo Ogawa, Taichi Suda, Takashi Yamamoto, Katsuhiro Kutsuki, Iori Hideshima, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 99　No. 14　2011/10/03　Research paper (scientific journal)

Passivation of High-k Bulk and Interface Defects by Incorporating La into Hf-silicate and its Impact on Carrier Mobility [SISC] (Invited)

M. Saeki, H. Arimura, N. Kitano, T. Hosoi, T. Shimura, H. Watanabe

IEEE 11th Kansai Colloquium, Electron Devices Workshop　2011/10

Synchrotron radiation photoemission study of Ge3N4/Ge structures formed by plasma nitridation

Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 50　No. 10　2011/10　Research paper (scientific journal)

Impact of thermally induced structural changes on the electrical properties of TiN/HfLaSiO gate stacks

Takashi Yamamoto, Shingo Ogawa, Hiroaki Arimura, Masayuki Saeki, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 50　No. 10　2011/10　Research paper (scientific journal)

La induced passivation of high-k bulk and interface defects in polycrystalline silicon/TiN/HfLaSiO/SiO2 stacks

Masayuki Saeki, Hiroaki Arimura, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 50　No. 10　2011/10　Research paper (scientific journal)

Ge p-MOSFET with GeON gate dielectrics formed by plasma nitridation of GeO2

A. Kasuya, K. Kutsuki, I. Hideshima, Y. Minoura, T. Hosoi, T. Shimura, H. Watanabe

Program and Abstracts of International Workshop on Quantum Nanostructures and Nanoelectronics (QNN2011)　2011/10

Nanoparticle-Induced Crystallization of Amorphous Ge Film Using Ferritin

Mutsunori Uenuma, Bin Zheng, Takanori Imazawa, Naofumi Okamoto, Masahiro Horita, Takashi Nishida, Yasuaki Ishikawa, Heiji Watanabe, Ichiro Yamashita, Yukiharu Uraoka

2011 International Conference on Solid State Devices and Materials (SSDM 2011)　2011/09　Research paper (international conference proceedings)

Analysis of Grain Orientation and Lattice Strain in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-ray Micro-beam Diffraction Method

T. Shimura, T. Matsumiya, N. Morimoto, T. Hosoi, K. Kajiwara, J. Chen, T. Sekiguchi, H. Watanabe

Abstracts of 14the International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-XIV)　2011/09　Research paper (international conference proceedings)

Nano-scale Characterization of Ultra-thin Dielectrics/Conductive Films through Scanning Capacitance Microscopy Studies

NAITOU Yuichi, WATANABE Heiji

Shinku　Vol. 54　No. 7　p. 437-444　2011/09

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices

Daisuke Ikeguchi, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

2011 International Conference on Silicon Carbide and Related Materials Abstract Book　2011/09

Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Heiji Watanabe, Takuji Hosoi, Takashi Kirino, Yusuke Kagei, Yusuke Uenishi, Atthawut Chanthaphan, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura

Applied Physics Letters　Vol. 99　No. 2　2011/07/11　Research paper (scientific journal)

（依頼講演）SiC-MOS 界面欠陥の評価とその改善策

渡部 平司

SiC 及び関連ワイドギャップ半導体研究会 第6回個別討論会 予稿冊子　2011/07

高温熱処理によるTiN/HfLaSiO/SiO2ゲートスタック中Hf及びLa原子のTiN電極中への拡散とMIPS構造による抑制

大嶽祐輝, 有村拓晃, 佐伯雅之, 力石薫介, 北野尚武, 細井卓治, 志村考功, 渡部平司

電子情報通信学会 シリコン材料・デバイス(SDM)研究会誌　2011/07

Selective assembly of close-packed gold nanoparticle arrays on substrate by ferritin protein-base encapsulation system and their plasmonic properties

Tatsuya Hashimoto, Megumi Fukuta, Kentaro Gamo, Nobuyuki Zettsu, Heiji Watanabe

Abstracts Vol.2 of the 5th International Conference on Surface Plasmon Photonics　2011/05

Advantage of high-density plasma nitridation for improving thermal stability of ultrathin GeO2 on Ge(100)

A. Kasuya, K. Kutsuki, I. Hideshima, T. Hosoi, T. Shimura, H. Watanabe

Technical Digest of 2011 International Meeting for Future of Electron Devices, Kansai　2011/05

Correlation between surface morphology and breakdown characteristics of thermally grown SiO2 dielectrics in 4H-SiC MOS Devices

Y. Uenishi, K. Kozono, S. Mitani, Y. Nakanob, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Technical Digest of 2011 International Meeting for Future of Electron Devices, Kansai　2011/05

Versatile protein-based bifunctional nano-systems (encapsulation and directed assembly): Selective nanoscale positioning of gold nanoparticle-viral protein hybrids

Bin Zheng, Nobuyuki Zettsu, Megumi Fukuta, Mutsunori Uenuma, Tatsuya Hashimoto, Kentaro Gamo, Yukiharu Uraoka, Ichiro Yamashita, Heiji Watanabe

Chemical Physics Letters　Vol. 506　No. 1-3　p. 76-80　2011/04/11　Research paper (scientific journal)

Fundamental Aspects and Interface Engineering of Ge-MOS Devices

Heiji Watanabe, Katsuhiro Kutsuki, Iori Hideshima, Gaku Okamoto, Shoichiro Saito, Tomoya Ono, Takuji Hosoi, Takayoshi Shimura

2011 MRS Spring Meeting Program and Exhibit Guide　2011/04　Research paper (international conference proceedings)

(Invited) Understanding and Control of Metal-Oxide-Semiconductor Interfaces for Advanced Nanoelectronics

Heiji Watanabe, Takuji Hosoi, Takayoshi Shimura, Kenji Shiraishi, Keisaku Yamada

Abstracts of The 3rd Working Group Meeting of Asia Consortium on Computational Materials Science on "Advances in Nano Device Simulation" (accms WGM3)　2011/04

Maximized benefit of LaAlO higher-κ gate dielectrics by optimizing the La/Al atomic ratio

Hiroaki Arimura, Stephen L. Brown, Alessandro Callegari, Andrew Kellock, John Bruley, Matt Copel, Heiji Watanabe, Vijay Narayanan, Takashi Ando

IEEE Electron Device Letters　Vol. 32　No. 3　p. 288-290　2011/03　Research paper (scientific journal)

Gate stack technologies for SiC power MOSFETs

H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura

ECS Transactions　Vol. 41　No. 3　p. 77-90　2011　Research paper (international conference proceedings)

Low-temperature crystallization of amorphous Ge thin films using metal nanoparticles

Kosuke Bundo, Takanori Imazawa, Mutsunori Uenuma, Yasuaki Ishikawa, Heiji Watanabe, Ichiro Yamashita, Yukiharu Uraoka

IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai　p. 116-117　2011　Research paper (international conference proceedings)

High-quality single-crystal SiGe layers on insulator formed by rapid melt growth

S. Ogiwara, Y. Suzuki, C. Yoshimoto, T. Hosoi, T. Shimura, H. Watanabe

IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai　p. 70-71　2011　Research paper (international conference proceedings)

Impact of stacked AlON/SiO2 gate dielectrics for SiC power devices

H. Watanabe, T. Kirino, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura

ECS Transactions　Vol. 35　No. 2　p. 265-274　2011　Research paper (international conference proceedings)

Reduction of charge trapping sites in Al2O3/SiO 2 stacked gate dielectrics by incorporating nitrogen for highly reliable 4H-SiC MIS devices

Takuji Hosoi, Yusuke Kagei, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 679-680　p. 496-499　2011　Research paper (international conference proceedings)

Electrical characteristics of ge-based metal-insulator-semiconductor devices with Ge3N4 dielectrics formed by plasma nitridation

Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Journal of Nanoscience and Nanotechnology　Vol. 11　No. 4　p. 2856-2860　2011　Research paper (scientific journal)

Surface cleaning and etching of 4H-SiC(0001) using high-density atmospheric pressure hydrogen plasma

Heiji Watanabe, Hiromasa Ohmi, Hiroaki Kakiuchi, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake

Journal of Nanoscience and Nanotechnology　Vol. 11　No. 4　p. 2802-2808　2011　Research paper (scientific journal)

Improved electrical properties and thermal stability of GeON gate dielectrics formed by plasma nitridation of ultrathin oxides on Ge(100)

Heiji Watanabe, Katsuhiro Kutsuki, Iori Hideshima, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura

Key Engineering Materials　Vol. 470　p. 152-157　2011　Research paper (international conference proceedings)

The rule of Electric Surface State for the Specific Binding of the Ti-recognizing Recombinant Ferritin with Amphoteric Oxides and Silicon Oxide Surfaces

M. Fukuta, N. Zettsu, Y. Uraoka, H. Watanabe

Abstracts of Eleventh International Simposium on Biomimetic Materials Processing (BMMP-11)　2011/01

Fabrication of SGOI Structure with High Ge Concentration by Rapid Melt Growth

Shimpei Ogiwara, Yuichiro Suzuki, Chiaki Yoshimoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of the 16th Workshop on Gate Stack Technology and Physics　2011/01

(Invited)Formation Kinetics of Oxygen Vacancy and Effective Work Function Modulation in High-k/metal Gate Stacks

Takuji Hosoi, Masayuki Saeki, Yudai Oku, Naomu Kitano, Hiroaki Arimura, Yuki Odake, Kenji Shiraishi, Keisaku Yamada, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of the 16th Workshop on Gate Stack Technology and Physics　2011/01

In situ Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation

Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011)　2011/01

Thermal Stability of GeON Gate Dielectrics Fabricated by High-density Plasma Nitridation of Ultrathin Thermal GeO2 on Ge (100)

Atsushi Kasuya, Katsuhiro Kutsuki, Iori Hideshima, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of the 16th Workshop on Gate Stack Technology and Physics　2011/01

Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks

Takashi Yamamoto, Shingo Ogawa, Hiroaki Arimura, Masayuki Saeki, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011)　2011/01

La Induced Passivation of High-k Bulk and Interface Defects in Poly-Si/TiN/HfLaSiO/SiO2 Stacks

Masayuki Saeki, Hiroaki Arimura, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of 2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2011)　2011/01

Thermal robustness and improved electrical properties of ultrathin germanium oxynitride gate dielectric

Katsuhiro Kutsuki, Iori Hideshima, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 50　No. 1　2011/01　Research paper (scientific journal)

Characterization of sige layer during ge condensation process by X-ray diffraction methods

Takayoshi Shimura, Tomoyuki Inoue, Daisuke Shimokawa, Takuji Hosoi, Yasuhiko Imai, Osami Sakata, Shigeru Kimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 50　No. 1　2011/01　Research paper (scientific journal)

Investigation of surface and interface morphology of thermally grown SiO2 dielectrics on 4H-SiC(0001) substrates

Takuji Hosoi, Kohei Kozono, Yusuke Uenishi, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 679-680　p. 342-345　2011　Research paper (international conference proceedings)

Energy band structure of SiO2/4H-SiC interfaces and its modulation induced by intrinsic and extrinsic interface charge transfer

Heiji Watanabe, Takashi Kirino, Yusuke Kagei, James Harries, Akitaka Yoshigoe, Yuden Teraoka, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura

Materials Science Forum　Vol. 679-680　p. 386-389　2011　Research paper (international conference proceedings)

Electronic structure characterization of La incorporated Hf-based high-k gate dielectrics by NEXAFS

Takashi Yamamoto, Singo Ogawa, Masahiro Kunisu, Junichi Tsuji, Koji Kita, Masayuki Saeki, Yudai Oku, Hiroaki Arimura, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Journal of Nanoscience and Nanotechnology　Vol. 11　No. 4　p. 2823-2828　2011　Research paper (scientific journal)

(依頼講演)ゲルマニウムMOSデバイスにおける界面設計と高移動度FETへの応用

渡部平司, 朽木克博, 糟谷篤志, 秀島伊織, 斉藤正一朗, 小野倫也, 細井卓治, 志村考功

応用物理学会 北海道支部講演会　2010/12

(招待講演)極限CMOS実現に向けた高機能化ゲートスタックの設計

渡部 平司

東北大学 電気通信研究所 ナノ・スピン実験施設主催 シンポジウム「次世代集積デバイス・プロセスの展望」　2010/12

Interfacial Design of High-k/Ge Gate Stacks with ZrO2 Dielectrics for Scaled Ge-based MOS devices

Takuji Hosoi, Gaku Okamoto, Iori Hideshima, Atsushi Kasuya, Katsuhiro Kutsuki, James Harries, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura, Heiji Watanabe

Abstracts, 41st IEEE Semiconductor Interface Specialists Conference　2010/12　Research paper (international conference proceedings)

Impact of Plasma Nitridation On Electrical properties and Thermal Stability of Ultrathin Thermal GeO2 on Ge(100)

Katsuhiro Kutsuki, Atsushi Kasuya, Iori Hideshima, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Abstracts, 41st IEEE Semiconductor Interface Specialists Conference　2010/12　Research paper (international conference proceedings)

Energy Band Structure of Thermally Grown SiO2/4H-SiC Interfaces and its Modulation Induced by Post-oxidation Treatments

Takashi Kirino, Yusuke Kagei, Akitaka Yoshigoe, Yuden Teraoka, Syuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Abstracts, 41st IEEE Semiconductor Interface Specialists Conference　2010/12　Research paper (international conference proceedings)

Passivation of High-k Bulk and Interface Defects by Incorporating La into Hf-silicate and its Impact on Carrier Mobility

Masayuki Saeki, Hiroaki Arimura, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Abstracts, 41st IEEE Semiconductor Interface Specialists Conference　2010/12　Research paper (international conference proceedings)

Kinetics of interfacial layer scavenging and dipole formation for ultimate scaling of Hf-based high-k gate dielectrics

Takashi Ando, Hiroaki Arimura, Richard Haight, Matt Copel, Heiji Watanabe, Vijay Nrayanan

Abstracts, 41st IEEE Semiconductor Interface Specialists Conference　2010/12　Research paper (international conference proceedings)

Autonomous Liquid-phase Nanoscale Processing for the Large-area Fabrication of Nanoparticle-based Parallel Device Arrays

Nobuyuki Zettsu, Takuji Hosoi, Shin Matsuura, Akira Watanabe, Heiji Watanabe

Abstracts for the 2010 MRS Fall Meeting technical symposia　2010/12　Research paper (international conference proceedings)

Ferritin Protein-base Versatile Encapsulation/Transport System for Selective Nanoscale Positioning of Targeted Plasmonic Au Nanoparticles

Tatsuya Hashimoto, Nobuyuki Zettsu, Bin Zheng, Megumi Fukuta, Kentaro Gamo, Ichiro Yamashita, Yukiharu Uraoka, Heiji Watanabe

Abstracts for the 2010 MRS Fall Meeting technical symposia　2010/12　Research paper (international conference proceedings)

Impact of Nitrogen Incorporation into A12O3 Gate Dielectrics on Flatband Voltage Stability in 4H-SiC MIS Devices

T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Excellent Electrical Property of Ge-MIS Devices with ZrO2 High-k Gate Dielectrics

T. Hosoi, G. Okamoto, K. Kutsuki, J. Harries, A. Yoshigoe, Y. Teraoka, T. Shimura, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Residual Order and Rate Enhancement of SiGe Thermal Oxidation

T. Shimura, Y. Okamoto, D. Shimokawa, T. Inoue, T. Hosoi, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Investigation of Correlation between Thermally Grown SiO2 Thickness Fluctuation and Local Dielectric Breakdown in 4H-SiC MOS Devices

Y. Uenishi, K. Kozono, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Modulation on Thermally Grown SiO2/4H-SiC Energy Band Structure Depending on Surface Orientation

T. Kirino, Y. Kagei, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Critical Titanium Coverage on SiO2 for Selective Adsorption of Ti-binding Ferritin

K. Gamo, M. Fukuta, T. Hashimoto, B. Zheng, N. Zettsu, I. Yamashita, Y. Uraoka, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Selective Transportaion of Gold Nanoparticles Encapsulated with TFG Subunit Dimers and Their Plasmonic Characteristics

T. Hashimoto, B. Zheng, M. Fukuta, K. Gamo, N. Zettsu, I. Yamashita, Y. Uraoka, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Fabricatrion of High-quality SiGe-on-insulator Structures by Rapid Melt Growth

S. Ogiwara, C. Yoshimoto, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Investigation of High-k Bulk and Interface Defects in Poly-Si/TiN/HfLaSiO/SiO2 Stacks using Charge Pumping Technique

M. Saeki, H. Arimura, N. Kitano, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Investigation of Structural Change in TiN/HfLaSiO Gate Stack Induced by High-temperature Annealing

T. Yamamoto, S. Ogawa, H. Arimura, M. Saeki, N. Kitano, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Impact of La and A1 Composition Ratio on the Electrical Properties of La-A1-O Higher-k Gate Dielectrics

H. Arimura, T. Ando, S. L. Brown, A. Kellock, A. Callegari, M. Copel, R. Haight, H. Watanabe, V. Narayanan

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　2010/11

Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric

K. Kutuki, I. Hideshima, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Third International Symposium on Atomiscally Controlled Fabrication Technology　Vol. 50　No. 1　2010/11

Fabrication of Shape Controlled Metal Nanodot Arrays by Autonomous Liquid-phase Nanoscale Processing as well as Their Charge Injection Characteritics for Floating Nanodot Gate Memory

N. Zettsu, S. Matsuura, A. Watanabe, K. Yamamura, T. Hosoi, H. Watanabe

Extended Abstracts of Third International Symposium on Atomically Controlled Fabrication Technology, 4.4, 42-43.　2010/11

Comprehensive Understanding of Oxygen Vacancy Induced Effective Work Function Modulation in High-k/Metal Gate Stacks

HOSOI Takuji, SAEKI Masayuki, KITA Yuki, OKU Yudai, ARIMURA Hiroaki, KITANO Naomu, SHIRAISHI Kenji, YAMADA Keisaku, SHIMURA Takayoshi, WATANABE Heiji

IEICE technical report　Vol. 110　No. 274　p. 23-28　2010/11

Cross-sectional TEM study on SiO2/4H-SiC (0001) structure and its impact on reliability degradation of SiC MOS devices

2010/10

Effect of SiO2/4H-SiC interface passivation on energy band alignment between SiO2 and 4H-SiC

2010/10

Control of Gate Metal Effective Work Functions and Interface Layer Thickness by Designing Interface Thermodynamics Based on Heteroatom Incorporation into High-k HfO2 Gate Dielectrics

Kenji Shiraishi, Takuji Hosoi, Heiji Watanabe, Keisaku Yamada

ECS Trans　2010/10　Research paper (scientific journal)

Fabrication of fully relaxed SiGe layers with high Ge concentration on silicon-on-insulator wafers by rapid melt growth

Takayoshi Shimura, Shimpei Ogiwara, Chiaki Yoshimoto, Takuji Hosoi, Heiji Watanabe

Applied Physics Express　Vol. 3　No. 10　2010/10　Research paper (scientific journal)

Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices diodes

Takuji Hosoi, Yusuke Kagei, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Abstract Booklet of the 8th European Conference on Silicon Carbide and Related Materials　2010/08

ゲートファーストHigh-k MIPS構造の実効仕事関数制御に向けた指針

細井卓治, 佐伯雅之, 奥雄大, 有村拓晃, 北野尚武, 白石賢二, 山田啓作, 志村考功, 渡部平司

応用物理学会シリコンテクノロジー分科会第127回研究集会予稿集　2010/07

(Invited) Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method

Heiji Watanabe, Chiaki Yoshimoto, Tatsuya Hashimoto, Shimpei Ogiwara, Takuji Hosoi, Takayoshi Shimura

The Proceedings of AM-FPD 10　2010/07　Research paper (international conference proceedings)

Interface Engineering of ZrO2/Ge Gate Stacks by Post-deposition Annealing and Al2O3 Capping Layers

H. Watanabe, G. Okamoto, K. Kutsuki, J. Harries, A. Yoshigoe, Y. Teraoka, T. Hosoi, T. Shimura

Extended Abstracts of International Symposium on Technology Evolution for Silicon Nano-Electronics　2010/06

Superior electrical properties and thermal stability of ultrathin GeON dielectrics formed by plasma nitridation of thermal oxides on Ge(100)

K. Kutsuki, I. Hideshima, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of International Symposium on Technology Evolution for Silicon Nano-Electronics　2010/06

Synchrotron X-ray Diffraction Study of Lattice Inclination and Strain in Strained Si Wafers

D. Shimokawa, T. Inoue, A. Ogura, M. Umeno, T. Hosoi, T. Shimura, H. Watanabe

Abstract Notebook of International Conference on Core Research and Engineering Science of Advanced Materials　2010/06

Conductive AFM study on local dielectric degradation of thermal oxides in 4H-SiC MOS devices

Y. Uenishi, K. Kozono, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Abstract Notebook of International Conference on Core Research and Engineering Science of Advanced Materials　2010/06

Control of Thermally Grown GeO2/Ge MOS Characteristics - Effects of Vanuum Annealing, Capping Layers and Electrode Material -

I. Hideshima, K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe

Abstract Notebook of International Conference on Core Research and Engineering Science of Advanced Materials　2010/06

次世代の高機能化 High-k 絶縁膜への研究開発の動き

渡部平司

月刊 MATERIAL STAGE　2010/05

(Invited) Ultimate EOT Scaling (< 5A) Using Hf-Based High-k Gate Dielectrics and Impact on Carrier Mobility

Takashi Ando, Martin M. Frank, Kisik Choi, Changhwan Choi, Richard Haight, Matt Copel, Hiroaki Arimura, Heiji Watanabe, Vijay Narayanan

Abstracts of 217th ECS Meeting - Vancouver, Canada　2010/04

Investigation of the Physical Origin of the Improved Electrical Properties of GeO2 Dielectric by Vacuum Annealing.

Shingo Ogawa, Takashi Yamamoto, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Program and Exhibit Guide of 2010 MRS spring meeting　2010/04　Research paper (international conference proceedings)

Oxidation Mechanism at Ge/GeO2 interfaces: An ab initio Study.

Shoichiro Saito, Takuji Hosoi, Heiji Watanabe, Tomoya Ono

Program and Exhibit Guide of 2010 MRS spring meeting　2010/04　Research paper (international conference proceedings)

Optimization of Composition Ratio in La-Al-O Gate Dielectrics for Advanced Metal/Higher-k Devices.

Hiroaki Arimura, Takashi Ando, Stephen L. Brown, Andrew Kellock, Alessandro Callegari, Matthew Copel, Richard Haight, Heiji Watanabe, Vijay Narayanan

Program and Exhibit Guide of 2010 MRS spring meeting　2010/04　Research paper (international conference proceedings)

Comprehensive study and control of oxygen vacancy induced effective work function modulation in gate-first high-k/metal inserted poly-Si stacks

T. Hosoi, M. Saeki, Y. Oku, H. Arimura, N. Kitano, K. Shiraishi, K. Yamada, T. Shimura, H. Watanabe

Digest of Technical Papers - Symposium on VLSI Technology　p. 179-180　2010　Research paper (international conference proceedings)

High-quality GeON gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

Heiji Watanabe, Katsuhiro Kutsuki, Iori Hideshima, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings　p. 867-870　2010　Research paper (international conference proceedings)

Control of gate metal effective work functions and interface layer thickness by designing interface thermodynamics based on heteroatom incorporation into high-k HfO2 gate dielectrics

K. Shiraishi, T. Hosoi, H. Watanabe, K. Yamada

ECS Transactions　Vol. 33　No. 6　p. 479-486　2010　Research paper (international conference proceedings)

Interface reaction and rate enhancement of SiGe thermal oxidation

T. Shimura, Y. Okamoto, D. Shimokawa, T. Inoue, T. Hosoi, H. Watanabe

ECS Transactions　Vol. 33　No. 6　p. 893-899　2010　Research paper (international conference proceedings)

Thermal stability and electron irradiation damage of ordered structure in the thermal oxide layer on Si

Takayoshi Shimura, Daisuke Shimokawa, Tomoyuki Inoue, Takuji Hosoi, Heiji Watanabe, Osami Sakata, Masataka Umeno

Journal of the Electrochemical Society　Vol. 157　No. 10　p. H977-H981　2010　Research paper (scientific journal)

Comprehensive study and control of oxygen vacancy induced effective work function modulation in gate-first high-k/metal inserted poly-Si stacks

T. Hosoi, M. Saeki, Y. Oku, H. Arimura, N. Kitano, K. Shiraishi, K. Yamada, T. Shimura, H. Watanabe

Digest of Technical Papers - Symposium on VLSI Technology　p. 179-180　2010　Research paper (international conference proceedings)

Ultimate EOT scaling (&lt; 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility

Takashi Ando, Martin M. Frank, Kisik Choi, Changhwan Choi, John Bruley, Marinus Hopstaken, Richard Haight, Matt Copel, Hiroaki Arimura, Heiji Watanabe, Vijay Narayanan

ECS Transactions　Vol. 28　No. 1　p. 115-123　2010　Research paper (international conference proceedings)

Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles

Takashi Ando, Matt Copel, John Bruley, Martin M. Frank, Heiji Watanabe, Vijay Narayanan

Applied Physics Letters　Vol. 96　No. 13　2010　Research paper (scientific journal)

Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy

Hiroaki Arimura, Richard Haight, Stephen L. Brown, Andrew Kellock, Alessandro Callegari, Matthew Copel, Heiji Watanabe, Vijay Narayanan, Takashi Ando

Applied Physics Letters　Vol. 96　No. 13　2010　Research paper (scientific journal)

Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high- k stacks

Hiroaki Arimura, Yudai Oku, Masayuki Saeki, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Journal of Applied Physics　Vol. 107　No. 3　2010　Research paper (scientific journal)

Residual order in the thermal oxide of a fully strained SiGe alloy on Si

Takayoshi Shimura, Yuki Okamoto, Tomoyuki Inoue, Takuji Hosoi, Heiji Watanabe

Phys. Rev. B　2010/01　Research paper (scientific journal)

Improvement of the Electrical Properties of Ge-MOS Capacitors Degraded by Air Exposure

Iori Hideshima, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics　2010/01

First-principles Study on Defect Formation at Ge/GeO2 Interface

Tomoya Ono, Shoichiro Saito, Takuji Hosoi, Heiji Watanabe

Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics　2010/01

Interface Engineering of Ge MOS Devices with ZrO2 Gate Dielectrics

Takuji Hosoi, Gaku Okamoto, Katsuhiro Kutsuki, Yusuke Kagei, James Harries, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics　2010/01

Systematic Investigation of Carbon Impurity Induced Electrical Degradation of TiN/HfSiON Gate Stacks

Masayuki Saeki, Hiroaki Arimura, Yudai Oku, Naomu Kitano, Motomu Kosuda, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics　2010/01

Characterization of GeON Dielectrics Fabricated by High-Density Plasma Nitridation of Ultrathin Thermal GeO2

Katsuhiro Kutsuki, Iori Hideshima, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of the 15th Workshop on Gate Stack Technology and Physics　2010/01

Low threshold voltage and high mobility N-channel metal-oxide-semiconductor field-effect transistor using Hf-Si/HfO2 gate stack fabricated by gate-last process

Takashi Ando, Tomoyuki Hirano, Kaori Tai, Shinpei Yamaguchi, Shinichi Yoshida, Hayato Iwamoto, Shingo Kadomura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 49　No. 1　2010　Research paper (scientific journal)

Direct observation of dielectric breakdown spot in thermal oxides on 4H-SiC(0001) using conductive atomic force microscopy

Kohei Kozono, Takuji Hosoi, Yusuke Kagei, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 645-648　p. 821-824　2010　Research paper (international conference proceedings)

Improved electrical properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided 4H-SiC(0001) surfaces

Yusuke Kagei, Takashi Kirino, Yuu Watanabe, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Materials Science Forum　Vol. 645-648　p. 507-511　2010　Research paper (international conference proceedings)

Improved characteristics of 4H-SiC MISFET with AlON/nitrided SiO 2 stacked gate dielectrics

Takuji Hosoi, Yusuke Kagei, Takashi Kirino, Yuu Watanabe, Kohei Kozono, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe

Materials Science Forum　Vol. 645-648　p. 991-994　2010　Research paper (international conference proceedings)

Impact of plasma nitridation of 4H-SiC surfaces and high-temperature hydrogenannealing on interface properties of thermally grown SiC-MOS devices

Y. Kagei, T. Kirino, K. Kozono, S. Mitani, Y. Nakano, T. Nakamura, A. Yoshigoe, Y. Teraoka, T. Hosoi, T. Shimura, H. Watanabe

2009/12

Observation of the Local Dielectric Degradation Phenomenon in Thermal Oxides on4H-SiC(0001) Using Conductive Atomic Force Microscopy

K. Kozono, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

2009/12

SR-XPS study on energy band structure of thermally grown SiO2/4H-SiC interface

T. Kirino, Y. Kagei, G. Okamoto, J. Harries, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

2009/12

Improvement of SiC-MOS Devices with Plasma Nitridation and AlON/SiO2 Stacked Dielectrics

H. Watanabe, Y. Kagei, K. Kozono, T. Kirino, Y. Watanabe, S. Mitani, Y. Nakano, T. Nakamura, A. Yoshigoe, Y. Teraoka, T. Hosoi, T. Shimura

2009/12

Development of Silane-coupling Silicon Substrate for Device Fabrication using Protein

Megumi Fukuta, Heiji Watanabe, Ichiro Yamashita

Program and Exhibit Guide of 2009 MRS fall meeting　2009/12　Research paper (international conference proceedings)

Effective Work Function Control of TaC/High-k Gate Stack by Post Metal Nitridation

Takashi Ando, Allesandro Callegari, Changhwan Choi, Marinus Hopstaken, John Bruley, Michael Gordon, Heiji Watanabe, Vijay Narayanan

Abstracts, 40th IEEE Semiconductor Interface Specialists Conference　2009/12　Research paper (international conference proceedings)

New Insights into Flatband Voltage Shift and Minority Carrier Generation in GeO2/Ge MOS devices

Takuji Hosoi, Marina Saito, Iori Hideshima, Gaku Okamoto, Katsuhiro Kutsuki, Shingo Ogawa, Takashi Yamamoto, Takayoshi Shimura, Heiji Watanabe

Abstracts, 40th IEEE Semiconductor Interface Specialists Conference　2009/12　Research paper (international conference proceedings)

Impact of Plasma Nitridation on Physical and Electrical Properties of Ultrathin Thermal Oxides on Ge(100).

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Program and Exhibit Guide of 2009 MRS fall meeting　2009/12　Research paper (international conference proceedings)

Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy

Tatsuya Hashimoto, Chiaki Yoshimoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Program and Exhibit Guide of 2009 MRS fall meeting　2009/12　Research paper (international conference proceedings)

Band-edge high-performance metal-gate/high-κ nMOSFET using Hf-Si/HfO 2 stack

Takashi Ando, Tomoyuki Hirano, Kaori Tai, Shinpei Yamaguchi, Shinichi Yoshida, Hayato Iwamoto, Shingo Kadomura, Heiji Watanabe

IEEE Transactions on Electron Devices　Vol. 56　No. 12　p. 3223-3227　2009/12　Research paper (scientific journal)

First-Principles Study on Oxidation Mechanism at Ge/GeO2 Interface

S. Saito, T. Hosoi, H. Watanabe, T. Ono

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

Electrical Characteristics of Ge-based MIS Devices with Ge3N4 Dielectrics Formed by Plasma

G. Okamoto, K. Kutsuki, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

Impact of gate electrode deposition process on effective work function of poly-Si/TiNHfSiO gate stacks

Y. Oku, H. Arimura, M. Saeki, N. Kitano, M. Kosuda, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

Structural and electrical properties of GeON dielectrics formed by high-density plasma nitridation of ultrathin thermal GeO2

K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

Observation of local dielectric degradation of thermal oxides on 4H-SiC using conductive AFM

K. Kozono, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

Impact of Carbon Impurity on Electrical Properties of TiN/HfSiON/SiO2

M. Saeki, H. Arimura, Y. Oku, N. Kitano, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

Thermal Instability of Effective Work Function of Metal/HfLaSiO Gate Stacks

H. Arimura, Y. Oku, M. Saeki, N. Kitano, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

Selective Adsorption of Ti-binding Ferritin on Thin Ti Film with Various Oxidation Treatment

T. Hashimoto, K. Gamo, M. Fukuta, B. Zheng, N. Okamoto, I. Yamashita, Y. Uraoka, N. Zettsu, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

Non-volatile Memory Applications in a 12 nm-sized Au Nanoparticle Array Fabricated by Preciously Controlled Colloidal Self-Assembly

S. Saito, T. Hosoi, H. Watanabe, N. Zettu

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

Advanced Gate Stack Technology for SiC-MOS Power Devices

H. Watanabe, Y. Kagei, K. Kozono, T. Kirino, Y. Watanabe, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura

Extended Abstracts of Second International Symposium on Atomiscally Controlled Fabrication Technology　2009/11

First-Principles Calculation of Oxidation Mechanism at Ge/GeO2 Interfaces

Shouichiro Saito, Takuji Hosoi, Heiji Watanabe, Tomoya Ono

The 12th Asian Workshop on First-Principles Electronic Structure Calculations　2009/10

Observation of Two-Dimensional Distribution of Lattoce Inclination and Strain in Strained Si Wafers by Synchrotron X-Ray Topography

Takayoshi Shimura, Tomoyuki Inoue, Daisuke Shimokawa, Takuji Hosoi, Heiji Watanabe, Atsushi Ogura, Masataka Umeno

DRIP XIII Conference　2009/09

Significant Improvement in GeO2/Ge MOS Characteristics by in Situ Vacuum Annealing

T. Hosoi, G. Okamoto, K. Kutsuki, T. Shimura, H. Watanabe

Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium　2009/09

Experimental Verification of Interface Dipole Formation in Metal/high-k Gate Stacks

T. Hosoi, Y. Kita, T. Shimura, K. Shiraishi, Y. Nara, K. Yamada, H. Watanabe

Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium　2009/09

Improved Electrical Properties and Effective Work Function Control of Metal/HfLaSiO/SiO2/Si Gate Stacks Fabricated by PVD-Based In-situ Process

M. Saeki, H. Arimura, Y. Oku, N. Kitano, T. Hosoi, T. Shimura, H. Watanabe

Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium　2009/09

Ge3N4 Gate Dielectrics Fabricated by High-Density Plasma Nitridation of Ge(100) Surfaces

K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe

Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium　2009/09

Improved Physical and Electrical Properties of Ultrathin Germanium Oxides by High-Density Plasma Nitridation

K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe

Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium　2009/09

Fabrication of Ge Nano-Wires on Insulators Using Lateral Liquid-Phase Epitaxy

C. Yoshimoto, T. Hashimoto, T. Hosoi, T. Shimura, H. Watanabe

Program & Abstracts of 5th Handai Nanoscience and Nanotechnology International Symposium　2009/09

Fundamental Study on GeO2/Ge Interface and its Electrical Properties

Heiji WATANABE, Marina SAITO, Shoichiro SAITO, Gaku OKAMOTO, Katsuhiro KUTSUKI, Takuji HOSOI, Tomoya ONO, Takayoshi SHIMURA

Abstracts, IEICE Technical Committee on Silicon Device and Materials (SDM)　2009/06

Mechanism of carrier mobility degradation induced by crystallization of HfO2 gate dielectrics

Takashi Ando, Tomoyuki Hirano, Shinichi Yoshida, Kaori Tai, Shinpei Yamaguchi, Satoshi Toyoda, Hiroshi Kumihashira, Takayoshi Shimura, Hayato Iwamoto, Masaharu Oshima, Shingo Kadomura, Heiji Watanabe

Appl. Phys. Express　Vol. 2　No. 7　2009/06　Research paper (scientific journal)

Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy: Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth

Tatsuya Hashimoto, Chiaki Yoshimoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Appl. Phys. Express　Vol. 2　No. 6　2009/05　Research paper (scientific journal)

Nitrogen Plasma Cleaning of Ge(100) Surfaces

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Surface Science　2009/03　Research paper (scientific journal)

Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

Yuki Kita, Shinichi Yoshida, Takuji Hosoi, Takayoshi Shimura, Kenji Shiraishi, Yasuo Nara, Keisaku Yamada, Heiji Watanabe

APPLIED PHYSICS LETTERS　Vol. 94　No. 12　2009/03　Research paper (scientific journal)

Investigation of Flatband Voltage Instability in Metal/High-k Gate Stacks

Takuji Hosoi, Yuki Kita, Takayoshi Shimura, Heiji Watanabe, Kenji Shiraishi, Yasuo Nara, Keisaku Yamada

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

Synchrotron X-ray Diffraction Studies of Thermal Oxide of Strained SiGe on Si

Daisuke Shimokawa, Yuki Okamoto, Tomoyuki Inoue, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

Lateral Liquid-Phase Epitaxy of Single-Crystal Germanium Wires on La2O3 Dielectrics

T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

4H-SiC MIS Devices with AION/SiO2/SiC Gate Structures

Y. Kagei, M. Harada, Y. Watanabe, T. Hosoi, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, H. Watanabe

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

Synchrotron Microbeam X-ray Diffraction Analysis of Strain Relaxation Process during Ge Condensation

Tomoyuku Inoue, Daisuke Shimokawa, Takuji Hosoi, Takayoshi Shimura, Yasuhiko Imai, Osami Sakata, Shigeru Kimura, Heiji Watanabe

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

Excellent Electrical Property and Flatband Voltage Controllability of HfLaSiO High-k Gate Dielectrics Fabricated by In-situ Process

H. Arimura, Y. Oku, N. Kitano, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

Advantages of Fluorine Ion Implantation for Improving Ge3N4/Ge Interfaces

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

Non-volatile Au Nanoparticle Memory Applications Enabled by Preciously Controlled Colloidal Self-Assembly

S. Uchida, S. Saitoh, T. Hosoi, H. Watanabe, N. Zettsu

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

Fabrication of Advanced Metal/High-k Gate Stacks by Atomically Controlled in-situ PVD-based Method

H. Watanabe, H. Arimura, N. Kitano, Y. Oku, M. Saeki, Y. Naitou, N. Yamaguchi, M. Kosuda, T. Hosoi, T. Shimura

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

Ge-MIS Devices with Ge3N4 Gate Dielectrics Fabricated by High-Density Plasma Nitridation

Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Marina Saito, Takayoshi Shimura, Heiji Watanabe

Extended Abstracts of First International Symposium on Atomiscally Controlled Fabrication Technology - Surface and Thin Film Processing-　2009/02

Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 95　No. 2　2009　Research paper (scientific journal)

First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces

Shoichiro Saito, Takuji Hosoi, Heiji Watanabe, Tomoya Ono

Applied Physics Letters　Vol. 95　No. 1　2009　Research paper (scientific journal)

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto, Marina Saito, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 94　No. 20　2009　Research paper (scientific journal)

Synchrotron X-ray diffraction studies of thermal oxidation of Si and SiGe

T. Shimura, Y. Okamoto, D. Shimokawa, T. Inoue, T. Hosoi, H. Watanabe, O. Sakata, M. Umeno

ECS Transactions　Vol. 19　No. 2　p. 479-493　2009　Research paper (international conference proceedings)

AlON/SiO2 stacked gate dielectrics for 4H-SiC MIS devices

Takuji Hosoi, Makoto Harada, Yusuke Kagei, Yuu Watanabe, Takayoshi Shimura, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe

Materials Science Forum　Vol. 615　p. 541-544　2009　Research paper (international conference proceedings)

Study on Electrical Properties of Ge3N4 Dielectrics Fabricated by High-Density Plasma Nitridation

K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics　2009/01

Fabrication and Electrical Characterization of High-k/Ge Gate Stacks with Al-Oxynitride Dielectrics

G. Okamoto, K. Kutsuki, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics　2009/01

Residual Order in the Thermally Oxidized Thin Film of Strained SiGe Layers Grown on Si Substrates

D. Shimokawa, Y. Okamoto, T. Inoue, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics　2009/01

Fabrication of Ge Wire on Insulator Using Lateral Liquid-Phase Epitaxial Growth

T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics　2009/01

Improved Electrical Properties and Flatband Control of HfLaSiO High-k Gate Dielectrics Fabricated by In-Situ Process

H. Arimura, Y. Oku, M. Saeki, N. Kitano, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of the 14th Workshop on Gate Stack Technology and Physics　2009/01

Impact of a treatment combining nitrogen plasma exposure and forming gas annealing on defect passivation of SiO2/SiC interfaces

Heiji Watanabe, Yuu Watanabe, Makoto Harada, Yusuke Kagei, Takashi Kirino, Takuji Hosoi, Takayoshi Shimura, Shuhei Mitani, Yuki Nakano, Takashi Nakamura

Materials Science Forum　Vol. 615　p. 525-528　2009　Research paper (international conference proceedings)

Observation of charge trapping site within high-k thin films by scanning capacitance microscopy

Microscopy　Vol. 43　No. 4　p. 287-291　2008/12　Research paper (scientific journal)

Formation of Advanced HfLaSiO/SiO2 Gate Dielectrics Utilizing PVD-based in-situ Fabrication Method

T. Hosoi, Y. Oku, H. Arimura, M. Saeki, N. Kitano, T. Shimura, H. Watanabe

Abstracts, 39th IEEE Semiconductor Interface Specialists Conference　2008/12　Research paper (international conference proceedings)

Improved Electrical Properties of Ge3N4/Ge Interfaces by Fluorine Ion Implantation

K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe

Abstracts, 39th IEEE Semiconductor Interface Specialists Conference　2008/12　Research paper (international conference proceedings)

Fabrication and Characterization of 4H-SiC MIS Devices with AION/SiO2 Stacked Gate Dielectrics

T. Hosoi, Y. Kagei, M. Harada, Y. Watanabe, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, H. Watanabe

2008/12

Passivation of SiO2/SiC interface defect by the combination treatment with nitrogen plasma irradiation and forming gas anneal

Y. Watanabe, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, H. Watanabe

2008/12

Improvement of thermally grown SiO2/SiC interfaces by using plasma nitrided 4H-SiC

Y. Kagei, Y. Watanabe, M. Harada, T. Hosoi, T. Shimura, H. Watanabe

2008/12

Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks

H. Watanabe, Y. Kita, T. Hosoi, T. Shimura, K. Shiraishi, Y. Nara, K. Yamada

IEICE Technical Report　2008/12

Investigation of Structural Defects in Strained Si Wafers by Synchrotron X-ray Topography

Takayoshi Shimura, Tomoyuki Inoue, Takuji Hosoi, Atsushi Ogura, Satoshi Iida, Masataka Umeno, Heiji Watanabe

Abstracts of the 5th International Symposium on Advanced Science and Technology of Silicon Materials　2008/11　Research paper (international conference proceedings)

Electrical Properties of Ge3N4/Ge Gate Stacks Fabricated Using High-Density Plasma Nitridation

G. Okamoto, K. Kutsuki, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices Science and Technology　2008/11　Research paper (international conference proceedings)

Residual Order in Thermal Oxide of Fully Strained SiGe Alloy on Si

T. Shimura, Y. Okamoto, T. Inoue, T. Hosoi, H. Watanabe

Extended Abstracts of 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices Science and Technology　2008/11　Research paper (international conference proceedings)

Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure

Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Journal of Crystal Growth　Vol. 310　No. 21　p. 4507-4510　2008/10/15　Research paper (scientific journal)

Evaluation and Control of Strain in Si Induced by Patterned SiN Stressor

Takayoshi Shimura, T. Inoue, Y. Okamoto, Takuji Hosoi, Atsushi Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, H. Watanabe

ECS Transactions　Vol. 16　No. 4　2008/10　Research paper (scientific journal)

真空一貫界面固相反応法による高品質Metal/High-kゲートスタック作製技術

渡部 平司

第49回真空に関する連合講演会講演予稿集　2008/10

真空一貫原子制御ＰＶＤプロセスによるＴｉＯ２/ＨfSiO/ＳiO２積層構造 High-k絶縁膜の作製と電気特性評価

渡部平司, 有村拓晃, 奥 雄大, 細井卓治, 志村考功, 北野尚武, 内藤裕一, 山口述夫, 小須田求

電気学会研究会資料-電子材料研究会EFM-08-24～34　2008/09

Fabrication of Advanced TiO2/HfSiO/SiO2 Layered Higher-k Dielectrics by Atomically Controlled In-situ PVD-Based Method

H. Watanabe, H. Arimura, N. Kitano, Y. Naitou, Y. Oku, N. Yamaguchi, M. Kosuda, T. Hosoi, T. Shimura

Abstracts of Fourth International WorkShop on New Group Ⅳ Semiconductor Nanoelectronics　2008/09

Characterization of Strain Relaxation Process during Ge Condensation by Synchrotron Microbeam X-ray Diffraction

T. Inoue, D. Shimokawa, T. Hosoi, T. Shimura, Y. Imai, O. Sakata, S. Kimura, H. Watanabe

Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS　2008/09　Research paper (international conference proceedings)

AlON/SiO2 Stacked Gate Dielectrics for 4H-SiC MIS Devices

T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, H. Watanabe

Abstract of 7th European Conference on Silicon Carbide and Related Materials, Barcelona,Spain, September 7-11, 2008　2008/09　Research paper (international conference proceedings)

Mechanism of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks

H. Watanabe, Y. Kita, T. Hosoi, T. Shimura, K. Shiraishi, Y. Nara, K. Yamada

PROCEEDINGS OF THE 72ND SYMPOSIUM ON SEMICONDUCTORS AND INTEGRATED CIRCUITS TECHNOLOGY　2008/07

Origins of interface dipoles at p-metal/Hf-based high-k gate stacks

H. Watanabe, T. Hosoi, K. Kita, T. Shimura, K. Shiraishi, Y. Nara, K. Yamada

Abstracts of International Conference on Quantum Simulators and Design 2008　2008/06

Improvement of thermally grown SiO2/SiC interfaces by plasma nitridation and post-metalization annealing

Y. Kagei, Y. Watanabe, M. Harada, T. Hosoi, T. Shimura, H. Watanabe

Abstracts of International Meeting for Future of Electron Devices, Kansai 2008　2008/05

Formation of Polycrystalline-Si Thin Films Using Nanocrystalline Ge Nuclei

Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake

Abstracts of International Meeting for Future of Electron Devices, Kansai 2008　2008/05

Fabrication of Local Ge-on-Insulator Structures using Liquid Phase Selective Lateral Epitaxy

T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, H. Watanabe

Abstracts of International Meeting for Future of Electron Devices, Kansai 2008　2008/05

Fabrication of High-k/Ge Gate Stacks with Al-oxynitride Dielectric Films

G. Okamoto, K. Kutsuki, M. Harada, T. Hosoi, T. Shimura, H. Watanabe

Abstracts of International Meeting for Future of Electron Devices, Kansai 2008　2008/05

Investigation of in-situ boron-doped Si selective epitaxial growth by comparison with arsenic doping

Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics　Vol. 47　No. 4　p. 2452-2455　2008/04/25　Research paper (scientific journal)

Characteristics of pure Ge3N4 dielectric layers formed by high-density plasma nitridation

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics　Vol. 47　No. 4　p. 2415-2419　2008/04/25　Research paper (scientific journal)

Landscape of Materials Design for Future Nano Electronics and Combinatorial materials Exploration

T.Chikyow, T. Nagata, N. Umezawa, M. Yoshitake, K. Ohmori, T. Yamada, H. Watanabe, K. Shiraishi, H. Koinuma

Proceedings of Technical Papaers of International Symposium on VLSI-TSA (Technology, Systems, and Applications)　2008/04　Research paper (international conference proceedings)

Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei

C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe, K. Yasutake

IEICE Technical Report　2008/04

SiO2 formation by oxidation of crystalline and hydrogenated amorphous Si in atmospheric pressure plasma excited by very high frequency power

Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics　Vol. 47　No. 3　p. 1884-1888　2008/03/21　Research paper (scientific journal)

Structural Optimization of HfTiSiO High-k Gate Dielectrics by Utilizing In-Situ PVD-Based Fabrication Method

H. Arimura, S. Horie, Y. Oku, T. Minami, N. Kitano, M. Kosuda, T. Hosoi, T. Shimura, H. Watanabe

Applied Surface Science　2008/03　Research paper (scientific journal)

Selective Epitaxial Growth of In Situ Carbon-Doped Silicon on Silicon Substrates

T. Ikuta, S. Fujita, H. Iwamoto, H. Iwamoto, S. Kadomura, T. Shimura, H. Watanabe, K. Yasutake

Surface and Interface Analysis　2008/03　Research paper (scientific journal)

Extremely Low Leakage Current from Ultra-thin HfO2 Films Formed by Neutral Beam Enhanced Atomic Layer Deposition

T. Ikoma, H. Yoshikawa, K. Kobayashi, T. Koganezawa, I. Hirosawa, H. Watanabe, S. Samukawa

Abstracts of 2008 MRS Spring Meeting, H4.46.　2008/03　Research paper (international conference proceedings)

MOS Transistor

WATANABE Heiji

IEEJ Transactions on Sensors and Micromachines　Vol. 128　No. 3　p. 154-156　2008/03

Characterization of Strained Si Wafers by Synchrotron X-Ray Topography

Takayoshi SHIMURA, Kohta KAWAMURA, Masahiro ASAKAWA, Heiji WATANABE, Kiyoshi YASUTAKE, Atsushi OGURA

Photon Factory Activity Report 2006　2008/02　Research paper (bulletin of university, research institution)

Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects

M. Sato, N. Umezawa, J. Shimokawa, H. Arimura, S. Sugino, A. Tachibana, M. Nakamura, N. Mise, S. Kamiyama, T. Morooka, T. Eimori, K. Shiraishi, K. Yamabe, H. Watanabe, KYamada, T. Aoyama, T. Nabatame, Y. Nara, Y. Ohji

Technical Digest - International Electron Devices Meeting, IEDM　2008　Research paper (international conference proceedings)

Theoretical investigations on metal/high-k interfaces

K. Shiraishi, T. Nakayama, S. Miyazaki, A. Ohta, Y. Akasaka, H. Watanabe, Y. Nara, K. Yamada

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT　p. 1256-1259　2008　Research paper (international conference proceedings)

Observation of crystalline imperfections in supercritical thickness strained silicon on insulator wafers by synchrotron X-ray topography

T. Shimura, T. Inouea, Y. Okamoto, T. Hosoi, H. Edo, S. Iida, A. Ogura, H. Watanabe

ECS Transactions　Vol. 16　No. 10　p. 539-543　2008　Research paper (international conference proceedings)

Dielectric and interface properties of TiO2/HfSiO/SiO 2 layered structures fabricated By in situ pvd method

H. Arimura, Y. Naitou, N. Kitano, Y. Oku, N. Yamaguchi, M. Kosuda, T. Hosoi, T. Shimura, H. Watanabe

ECS Transactions　Vol. 16　No. 5　p. 121-129　2008　Research paper (international conference proceedings)

Effect of annealing on electronic characteristics of HfSiON films fabricated by Damascene gate process

K. Yamabe, K. Murata, T. Hayashi, T. Tamura, M. Sato, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, R. Hasunuma

ECS Transactions　Vol. 16　No. 5　p. 521-526　2008　Research paper (international conference proceedings)

Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-k Gate Stacks

Heiji Watanabe, Shinichi Yoshida, Yuki Kita, Takuji Hosoi, Takayoshi Shimura, Kenji Shiraishi, Yasuo Nara, Keisaku Yamada

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6　Vol. 16　No. 5　p. 27-+　2008　Research paper (international conference proceedings)

Excellent electrical properties of TiO2/HfSiO/SiO2 layered higher-k gate dielectrics with sub-1 nm equivalent oxide thickness

Hiroaki Arimura, Naomu Kitano, Yuichi Naitou, Yudai Oku, Takashi Minami, Motomu Kosuda, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 92　No. 21　2008　Research paper (scientific journal)

Control of crystalline microstructures in metal gate electrodes for nano CMOS devices

K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe

ECS Transactions　Vol. 13　No. 2　p. 201-207　2008　Research paper (international conference proceedings)

Application of synchrotron X-ray diffraction methods to gate stacks of advanced MOS Devices

T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, H. Watanabe

ECS Transactions　Vol. 13　No. 2　p. 75-82　2008　Research paper (international conference proceedings)

Characterization of strained Si wafers by X-ray diffraction techniques

Takayoshi Shimura, Kohta Kawamura, Masahiro Asakawa, Heiji Watanabe, Kiyoshi Yasutake, Atsushi Ogura, Kazunori Fukuda, Osami Sakata, Shigeru Kimura, Hiroki Edo, Satoshi Iida, Masataka Umeno

Journal of Materials Science: Materials in Electronics　Vol. 19　No. 1　p. S189-S193　2008　Research paper (scientific journal)

In situ arsenic-doped Si1-y Cy selective epitaxial growth under atmospheric pressure

Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Applied Physics Letters　Vol. 92　No. 4　2008　Research paper (scientific journal)

Characterization of Strained Si Wafers by using Synchrotron X-ray Diffraction Methods

T. Inoue, Y. Okamoto, A. Ogura, H. Edo, S. Iida, K. Fukuta, O. Sakata, S. Kimura, M. Umeno, T. Shimura, K. Yasutake, H. Watanabe

2008/01

Fundamental aspects of effective work function instability at metal/high-k interfaces

Y. Kagei, Y. Kita, T. Hosoi, T. Shimura, H. Watanabe, K. Shiraishi, M. Kadoshima, Y. Nara, K. Yamada

2008/01

Characteristics of p-MISFETs with TiN/HfSiON Gate Stacks Fabricated by PVD-based In-situ Method

N. Kitano, H. Arimura, S. Horie, S. Sakashita, Y. Nishida, J. Yugami, T. Minami, M. Kosuda, T. Hosoi, T. Shimura, H. Watanabe

2008/01

Study on Thermal and Humidity of GeN4 Thin Layers Fabricated by Plasma Nitridation

K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, K, H. Watanabe

2008/01

Achievement of sub-1nm EOT high-k gate dielectrics with TiO2/HfSiO/SiO2 layered structure

H. Arimura, S. Horie, Y. Oku, T. Minami, N. Kitano, M. Kosuda, T. Hosoi, T. Shimura, H. Watanabe

2008/01

Improvement in Threshold Voltage Increase of Metal Gate/HiSiON p-MOSFET

M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T Aoyama, Y. Nara, Y. Ohji

2008/01

Charge trapping properties in Ti O2 HfSiOSi O2 gate stacks probed by scanning capacitance microscopy

Y. Naitou, H. Arimura, N. Kitano, S. Horie, T. Minami, M. Kosuda, H. Ogiso, T. Hosoi, T. Shimura, H. Watanabe

Applied Physics Letters　Vol. 92　No. 1　2008　Research paper (scientific journal)

Enhanced performance of gate-first p-channel metal-insulator-semiconductor field-effect transistors with polycrystalline silicon/TiN/HfSiON stacks fabricated by physical vapor deposition based in situ method

Naomu Kitano, Shinya Horie, Hiroaki Arimura, Takaaki Kawahara, Shinsuke Sakashita, Yukio Nishida, Jiro Yugami, Takashi Minami, Motomu Kosuda, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Japanese Journal of Applied Physics, Part 2: Letters　Vol. 46　No. 45-49　p. L1111-L1113　2007/12/14　Research paper (scientific journal)

A Comprehensive Study on Effective Work Function Modulation of Metal/High-k Gate Stacks

T. Hosoi, Y. Kita, Y.Kagei, T.Shimura, H. Watanabe, K. Shiraishi, Y. Nara, K. Yamada

Abstracts, 38th IEEE Semiconductor Interface Specialists Conference　2007/12　Research paper (international conference proceedings)

Enhanced Performance of Gate-First p-Channel Metal-Insulator-Srmiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method

N. Kitano, S. Horie, H. Arimura, T. Kawahara, S. Sakashita, Y. Nishida, J. Yugami, T. Minami, M. Kosuda, T. Hosoi, T. Shimura, H. Watanabe

Jpn.J.Appl.Phys. 46 (2007) L1111-L1113.　Vol. 14　p. 63-65　2007/11　Research paper (scientific journal)

Structural Optimization of HfTiSiO High-k Gate Dielectrics by Utilizing In-Situ PVD-Based Fabrication Method

H. Arimura, S. Horie, T. Minami, N. Kitano, M. Kosuda, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts & ProgramFifth International Symposium on Control of Semiconductor Interfaces - for Next Generation ULSI Process Integrations -　2007/11　Research paper (international conference proceedings)

Systematic Consideration on Si Substrate Depletion Appeared in p-Metal/Hf-Based HIGK-k Gate Stacks

K. Shiraishi, Y. Akasaka, M. Kadoshima, T. Nakayama, S. Miyazaki, H. Watanabe, T. Chikyow, Y. Nara, Y. Ohji, K. Yamabe, K. Yamada

The Sixth Pacific Rim International Conference on Advanced Materials and Processing　2007/11　Research paper (international conference proceedings)

Low-Temperature Oxidation of Crystalline and Hydrogenated Amorphous Si Using Very High Frequency Plasma at Atmospheric Pressure

H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10　Research paper (international conference proceedings)

Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process

H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

Appl. Phys. Lett.　2007/10　Research paper (scientific journal)

Enhanced Electrical Properties of TiN/HfSiON Gate Stacks by Using the PVD-based In-situ Fabrication Method

N. Kitano, H. Arimura, S. Horie, T. Minami, M. Kosuda, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007　2007/10

Selective Epitaxial Growth of In-situ Carbon-Doped Si on Si Substrates

T. Ikuta, S. Fujita, H. Iwamoto, S. Kadomura, T. Shimura, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007　2007/10

Single electron trapping within high-temperature annealed high-k dielectric films detected by scanning capacitance microscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, H. Watanabe

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007　2007/10

Interface Properties of HfTiSiO Gate Dielectrics Formed by In-Situ PVD-Based Fabrication Method

H. Arimura, S. Horie, T. Minami, N. Kitano, M. Kosuda, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007　2007/10

Systematic Study on Interface Dipole of Metal/High-k Gate Stacks

Y. Kita, S. Yoshida, T. Hosoi, T. Shimura, H. Watanabe, K. Shiraishi, Y. Nara, K. Yamada

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007　2007/10

Proposal of AION/SiO2 Layered Gate Dielectric for SiC MOS Devices

M. Harada, Y. Watanabe, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007　2007/10

Thermal Stability of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nirridation

K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, H. Watanabe

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007　2007/10

Low-Temperature Oxidation of Crystalline and Hydrogenated Amorphous Si Using Very High Frequency Plasma at Atmospheric Pressure

H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007　2007/10

Correlation between surface topography and static capacitance image of ultrathin SiO2 films evaluated by scanning capacitance microscopy

Yuichi Naitou, Atsushi Ando, Hisato Ogiso, Siro Kamohara, Fumiko Yano, Akio Nishida, Heiji Watanabe

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 46　No. 9 A　p. 5992-5999　2007/09/07　Research paper (scientific journal)

Extraction of gate-edge workfunction of metal gate and its impact on scaled MOSFETs

N. Mise, T. Matsuki, T. Watanabe, T. Eimori, Y. Nara

Microelectronic Engineering　Vol. 84　No. 9-10　p. 2201-2204　2007/09　Research paper (scientific journal)

Characterization of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation

K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, K. Yasutake, H. Watanabe

Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS, TSUKUBA, 2007　2007/09　Research paper (international conference proceedings)

Systematic Study on Fermi level pining of Hf-based high-k gate stacks

K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, K. Ohmori, T.Chikyow, K. Yamabe, Y. Nara, Y. Ohji, K. Yamada

Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS, TSUKUBA, 2007　2007/09　Research paper (international conference proceedings)

In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET

T. Ikuta, Y. Miyanami, S. Fujita, H. Iwamoto, S. Kadomura, T. Shimura, H. Watanabe, K. Yasutake

Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS, TSUKUBA, 2007　2007/09　Research paper (international conference proceedings)

Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction(SPIR) Method

N. Kitano, H. Arimura, S. Horie, T. Hosoi, T. Shimura, H. Watanabe, T. Kawahara, S. Sakashita, Y. Nishida, J. Yugami, T. Minami, M. Kosuda

Extended Abstracts of the 2007 International Conference on SOLID STATE DEVICES AND MATERIALS TSUKUBA, 2007　Vol. 2007　p. 12-13　2007/09　Research paper (international conference proceedings)

First-principles study on electronic structures and dielectric properties of Si/SiO2 interface

Tomoya Ono, Katsuhiro Kutsuki, Yoshiyuki Egami, Heiji Watanabe, Kikuji Hirose

Journal of Physics: Condensed Matter　2007/08　Research paper (scientific journal)

Experimental study on improvement of the Fermi-level pinning in metal/HfSiON gate stack

Masaru Kadoshima, Yoshihiro Sugita, Kenji Shiraishi, Heiji Watanabe, Akio Ohta, Seiichi Miyazaki, Kiyomi Nakajima, Toyohiro Chikyow, Keisaku Yamada, Toshio Aminaka, Etsuo Kurosawa, Takeo Matsuki, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji

PROCEEDINGS OF THE 71ST SYMPOSIUM ON SEMICONDUCTORS AND INTEGRATED CIRCUITS TECHNOLOGY　Vol. 71　p. 15-18　2007/07

Low-Temperature Oxidation Process of Silicon Using Atmospheric Pressure Plasma

H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

Digest of Technical Papers of the 14th International Workshop on Active-Matrix Flatpanel Displays and Devices, 11–13 July 2007, Hyogo, Japan.　2007/07　Research paper (international conference proceedings)

Formation and characterization of Ge3N4 thin layers

K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, K. Yasutake, H. Watanabe

Formation and characterization of Ge3N4 thin layers　2007/06

Characterization of metal/high-k structures using monoenergetic positron beams

Akira Uedono, Tatsuya Naito, Takashi Otsuka, Kenichi Ito, Kenji Shiraishi, Kikuo Yamabe, Seiichi Miyazaki, Heiji Watanabe, Naoto Umezawa, Toyohiro Chikyow, Toshiyuki Ohdaira, Ryoichi Suzuki, Yasushi Akasaka, Satoshi Kamiyama, Yasuo Nara, Keisaku Yamada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 46　No. 5B　p. 3214-3218　2007/05　Research paper (scientific journal)

Characterization of epitaxial Si films grown at low-temperatures by atmospheric pressure plasma CVD

Y. Kirihata, N. Tawara, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake

Abstracts 5th Int. Conf. on Silicon Epitaxy and Heterostructures　2007/05　Research paper (international conference proceedings)

Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High- $\kappa$ Dielectrics

N. Umezawa, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, H. Watanabe, K. Yamabe, T. Ohno, K. Yamada, Y. Nara

IEEE Electron Device Letters　Vol. 28　No. 5　p. 363-365　2007/05　Research paper (scientific journal)

Atmospheric in situ arsenic-doped SiGe selective epitaxial growth for raised-extension N-type metal-oxide-semiconductor field-effect transistor

Tetsuya Ikuta, Yuki Miyanami, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 46　No. 4 B　p. 1916-1920　2007/04/24　Research paper (scientific journal)

Impact of physical vapor deposition-based In situ fabrication method on metal/high-k gate stacks

Heiji Watanabe, Shinya Horie, Takashi Minami, Naomu Kitano, Motomu Kosuda, Takayoshi Shimura, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 46　No. 4 B　p. 1910-1915　2007/04/24　Research paper (scientific journal)

Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures

K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, K. Yamada

Journal of Applied Physics　Vol. 101　No. 8　p. 084118-084118　2007/04/15　Research paper (scientific journal)

Formation of Silicon Dioxide Layers at Low Temperatures (150-400 C) by Atmospheric Pressure Plasma Oxidation of Silicon

H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

Sci. Technol. Adv. Mater.　2007/04　Research paper (scientific journal)

Controllability of Flatband Voltage in Metal/High-k Gate Stack Structures.

K. Ohmori, P. Ahmet, K. Kakushima, H. Yoshikawa, K. Shiraishi, N. Umezawa, K. Nakajima, M. Yoshitake, K. Kobayashi, K. Yamabe, H. Watanabe, Y. Nara, T. Nakayama, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

Abstracts of 2007MRS Spring Meeting Abstracts　2007/04

Investigation of 4H-SiC MIS Devices with AlON/SiO2 Layered Structures.

M. Harada, Y. Watanabe, S. Okda, T. Shimura, K. Yasutake, H. Watanabe

Abstracts of 2007 MRS Spring Meeting　2007/04

Formation of Low-Leakage-current Ultra-thin SiO2 Films Using Low-temperature Neutral Beam Oxidation.

T. Ikoma, S. Fukuda, K. Endo, H. Watanabe, S. Samukawa

Abstracts of 2007 MRS Spring Meeting　2007/04

Systematic Study on Effective Work Function Instability of Metal/High-k Gate Stacks.

Y.Kita, S. Yoshida, T. Shimura, K. Yasutake, H. Watanabe, K. Shiraishi, Y. Nara, K. Yamada

Abstracts of 2007 MRS Spring Meeting　2007/04

Improving the Electrical Properties of TiN/HfSiO Gate Stacks using the PVD-based In-situ Fabrication Method.

N. Kitano, S. Horie, T. Minamo, M. Kosuda, T. Shimura, K. Shiraishi, H. Watanabe

Abstracts of 2007 MRS Spring Meeting　2007/04

Two type of Oxgen Vacancies in Hf-based High-k Dielectrics-Existence of "Alive" and "Dead" Oxygen Vacancies.

K. Shiraishi, T. Nakayama, S. Miyazaki, N. Umezawa, K. Yamada, H. Watanabe, T. Chikyow, Y. Nara, K. Yamada

Abstracts of 2007 MRS Spring Meeting　2007/04

Characterization of TiN/HfSiON gate stacks fabricated by the PVD-based in-situ method

H. Arimura, S. Horie, T. Minami, N. Kitano, M. Kosuda, T. Shimura, K. Shiraishi, H. Watanabe

Extended Abstracts of 2007 IMFEDK International Meeting for Future of Electron Devices,Kansai　2007/04

Electric properties of 4H-SiC MIS devices with AlON/SiO2 stacked gate dielectrics

Y. Watanabe, M. Harada, S. Okada, T. Shimura, K. Yasutake, H. Watanabe

Extended Abstracts of 2007 IMFEDK International Meeting for Future of Electron Devices,Kansai　2007/04

Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition

Kiyoshi Yasutake, Naotaka Tawara, Hiromasa Ohmi, Yoshikazu Terai, Hiroaki Kakiuchi, Heiji Watanabe, Yasufumi Fujiwara

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 46　No. 4 B　p. 2510-2515　2007/04　Research paper (scientific journal)

Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar/O2 plasma

H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

Appl. Phys. Lett.　2007/04　Research paper (scientific journal)

Isotopic labeling study of the oxygen diffusion in HfO2∕SiO2∕Si

Ming Zhao, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Heiji Watanabe, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada

Applied Physics Letters　Vol. 90　No. 13　p. 133510-133510　2007/03/26　Research paper (scientific journal)

Novel In-situ Fabrication Method for High-quality metal/High-k Gate Stacks by Utilizing Low-damage Sputtering System

H. Watanabe, T. Shimura, T. Minami, N. Kitano, M. Kosuda

CANON ANELVA CORPORATION Technical Reports　Vol. 13　p. 5-11　2007/03

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial cheical vapor deposition

T.Ikuta, Y. Miyanami, S.Fujita, H. Iwamoto, S. Kadomura, T. Simura, H. Watanabe, K. Yasutake

Science and Technology of Advanced Marerials　2007/03　Research paper (scientific journal)

Interface reactions at TiN/HfSiON gate stacs: Dependence on the electrode structure and deposition method

S. Yoshida, Y. Watanabe, Y. Kita, T. Shimura, H. Watanabe, K. Yasutake, Y. Akasaka, Y. Nara, K. Yamada

Science and Technology of Advanced Marerials　2007/03　Research paper (scientific journal)

Residual Order in the Interfacial SiO2 Layer between a High-k Material and a Si Substrate

Takayoshi SHIMURA, Eiji MISHIMA, Kohta KAWAMURA, Heiji WATANABE, Kiyoshi YASUTAKE

Photon Factory Activity Report 2005　2007/02　Research paper (bulletin of university, research institution)

Study on Interface Reactions of HfSix/HfO2/Si Gate Stacks for Advanced nMOSFET Application

Yuki Kita, Shinichi Yoshida, Takashi Ando, Kaori Tai, Hayato Iwamoto, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics　2007/02

Observation and Mechanism of Self-limiting Oxidation of SiGe/SOI structure

Takayoshi Shimura, Michihiro Shimizu, Shinichiro Horiuchi, Heiji Watanabe, Kiyoshi Yasutake, Masataka Umeno

Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics　2007/02

A New Insight into Control of Fermi Level Pinnng in TiN/HfSiON Gate Stack

Akio Ohta, Seiichi Miyazaki, Yasushi Akasaka, Heiji Watanabe, Osaka Universtiy, Kenji Shiraishi, Keisaku Yamada, Seiji Inumiya, Yasuo Nara

Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics　2007/02

Structural and Electrical Properties of TiN/HfSiON Gate Stacks Fabricated by PVD-based In-situ Fabrication Method

Shinya Horie, Takashi Minami, Naomu Kitano, Motomu Kosuda, Takayoshi Shimura, Kenji Shiraishi, Heiji Watanabe

Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics　2007/02

Sub-1nm HfSix/HfO2 Gate Stack Using Novel Si Extrusion Process for High Performance Application

Ando, T. Hirano, K. Tai, S. Yamaguchi, T. Kato, Y. Hagimoto, K. Watanabe, R. Yamamoto, S. Kanda, K. Nagano, S. Terauchi, Y. Tateshita, Y. Tagawa, M. Saito, H. Iwamoto, S. Yoshida, H. Watanabe, N. Nagashima, S. Kadomura

Extended Abstracts of the 12th Workshop on Gate Stack Technology and Physics　2007/02

Mechanism of suppressed change in effective work functions for impurity-doped fully silicided NiSi electrodes on Hf-based gate dielectrics

Kenzo Manabe, Takashi Hase, Toru Tatsumi, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 46　No. 1　p. 91-97　2007/01/10　Research paper (scientific journal)

Thermal and humidity stability of Ge3N4 thin layers fabricated by high-density plasma nitridation

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura, Heiji Watanabe

2007 International Semiconductor Device Research Symposium, ISDRS　2007　Research paper (international conference proceedings)

Wide controllability of flatband voltage by tuning crystalline microstructures in metal gate electrodes

K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada

Technical Digest - International Electron Devices Meeting, IEDM　p. 345-348　2007　Research paper (international conference proceedings)

Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Applied Physics Letters　Vol. 91　No. 16　2007　Research paper (scientific journal)

Interface reaction of high-k gate stack structures observed by high-resolution RBS

Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Heiji Watanabe, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada

ECS Transactions　Vol. 11　No. 4　p. 103-115　2007　Research paper (international conference proceedings)

Study of high-k gate dielectrics by means of positron annihilation

A. Uedon, T. Naito, T. Otsuka, K. Ito, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, A. Hamid, T. Chikyow, T. Ohdaira, R. Suzuki, S. Ishibashi, S. Inumiya, S. Kamiyama, Y. Akasaka, Y. Nara, K. Yamada

Physica Status Solidi (C) Current Topics in Solid State Physics　Vol. 4　No. 10　p. 3599-3604　2007　Research paper (international conference proceedings)

High performance gate-first pMISFET with TiN/HfSiON gate stacks fabricated with PVD-based in-situ method

Takaaki Kawahara, Yukio Nishida, Shinsuke Sakashita, Jiro Yugami, Naomu Kitano, Takashi Minami, Motomu Kosuda, Shinya Horie, Hiroaki Arimura, Takayoshi Shimura, Heiji Watanabe

ECS Transactions　Vol. 11　No. 4　p. 585-599　2007　Research paper (international conference proceedings)

Improvement in fermi-level pinning of p-MOS metal gate electrodes on HfSiON by employing Ru gate electrodes

M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, Y. Ohji

ECS Transactions　Vol. 11　No. 4　p. 169-180　2007　Research paper (international conference proceedings)

Theoretical studies on fermi level pining of Hf-based high-k gate stacks based on thermodynamics

K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, A. Ohta, S. Miyazaki, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji, K. Yamada

ECS Transactions　Vol. 11　No. 4　p. 125-133　2007　Research paper (international conference proceedings)

Interface reaction of high-k gate stack structures observed by high-resolution RBS

Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Heiji Watanabe, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada

ECS Transactions　Vol. 11　No. 4　p. 103-115　2007　Research paper (international conference proceedings)

Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams

A. Uedono, R. Hasunuma, K. Shiraishi, K. Yamabe, S. Inumiya, Y. Akasaka, S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, S. Ishibashi, T. Ohdaira, R. Suzuki, K. Yamada

ECS Transactions　Vol. 11　No. 4　p. 81-90　2007　Research paper (international conference proceedings)

Tight distribution of dielectric characteristics of HfSiON in metal gate devices

R. Hasunuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, S. Inumiya, M. Sato, Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, K. Yamabe

ECS Transactions　Vol. 11　No. 4　p. 3-11　2007　Research paper (international conference proceedings)

Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure

Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Applied Physics Letters　Vol. 91　No. 9　2007　Research paper (scientific journal)

Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS

M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, Y. Ohji

Digest of Technical Papers - Symposium on VLSI Technology　p. 66-67　2007　Research paper (international conference proceedings)

Interface engineering by PVD-based in-situ fabrication method for advanced metal/high-k gate stacks

Heiji Watanabe, Shinya Horie, Hiroaki Arimura, Naomu Kitano, Takashi Minami, Motomu Kosuda, Takayoshi Shimura, Kiyoshi Yasutake

ECS Transactions　Vol. 6　No. 3　p. 71-85　2007　Research paper (international conference proceedings)

Theoretical studies on metal/high-k gate stacks

Kenji Shiraishi, Yasushi Akasaka, Genji Nakamura, Takashi Nakayama, Seiichi Miyazaki, Heiji Watanabe, Akio Ohta, Kenji Ohmori, Toyohiro Chikyow, Yasuo Nara, Kikuo Yamabe, Keisaku Yamada

ECS Transactions　Vol. 6　No. 1　p. 191-204　2007　Research paper (international conference proceedings)

Interface engineering by PVD-based in-situ fabrication method for advanced metal/high-k gate stacks

Heiji Watanabe, Shinya Horie, Hiroaki Arimura, Naomu Kitano, Takashi Minami, Motomu Kosuda, Takayoshi Shimura, Kiyoshi Yasutake

ECS Transactions　Vol. 6　No. 3　p. 71-85　2007　Research paper (international conference proceedings)

Investigation of local charged defects within high-temperature annealed HfSiONSi O2 gate stacks by scanning capacitance spectroscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Yasutake, H. Watanabe

Journal of Applied Physics　Vol. 101　No. 8　2007　Research paper (international conference proceedings)

Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings　p. 376-379　2007　Research paper (international conference proceedings)

Physics of interfaces between gate electrodes and high-k dielectrics

K. Shiraishi, H. Takeuchi, Y. Akasaka, T. Nakayama, S. Miyazaki, T. Nakaoka, A. Ohta, H. Watanabe, N. Umezawa, K. Ohmori, P. Ahmet, K. Toii, T. Chikyow, Y. Nara, T.-J. King Liu, H. Iwai, K. Yamada

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings　p. 384-387　2007　Research paper (international conference proceedings)

Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma

Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe, Kiyoshi Yasutake

Applied Physics Letters　Vol. 90　No. 9　2007　Research paper (scientific journal)

Recent Progress in Understanding the Mechanism of Schottky Barrier Height Formation at Various Interfaces (INVITED)

K. Shiraishi, T. Nakayama, S. Okada, S. Miyazaki, H. Watanabe, Y. Akasaka, T. Chikyow, Y. Nara, K. Yamada

Abstrasts of International Symposium on Theories of Organic/Metal Interfaces, p24.　2007/01

Theory of fermi level pinning of high-k dielectrics

Kenji Shiraishi, Yasushi Akasaka, Naoto Umezawa, Yasuo Nara, Keisaku Yamada, Hideki Takeuchi, Heiji Watanabe, Toyohiro Chikyow, Tsu-Jae King Liu

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD　p. 306-313　2007　Research paper (international conference proceedings)

Physics of interfaces between gate electrodes and high-k dielectrics

K. Shiraishi, H. Takeuchi, Y. Akasaka, T. Nakayama, S. Miyazaki, T. Nakaoka, A. Ohta, H. Watanabe, N. Umezawa, K. Ohmori, P. Ahmet, K. Toii, T. Chikyow, Y. Nara, T.-J. King Liu, H. Iwai, K. Yamada

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings　p. 384-387　2007　Research paper (international conference proceedings)

Study of high-k gate dielectrics by means of positron annihilation

A. Uedon, T. Naito, T. Otsuka, K. Ito, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, A. Hamid, T. Chikyow, T. Ohdaira, R. Suzuki, S. Ishibashi, S. Inumiya, S. Kamiyama, Y. Akasaka, Y. Nara, K. Yamada

Physica Status Solidi (C) Current Topics in Solid State Physics　Vol. 4　No. 10　p. 3599-3604　2007　Research paper (international conference proceedings)

Mechanism for fermi level pinning at electrode/Hf-based dielectric interface: Systematic study of dependence of effective work functions for polycrystalline silicon and fully silicided NiSi electrodes on Hf density at interface

Kenzo Manabe, Takashi Hase, Toru Tatsumi, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 45　No. 12　p. 9053-9057　2006/12/15　Research paper (scientific journal)

Modified oxygen vacancy induced fermi level pinning model extendable to P-metal pinning

Yasushi Akasaka, Genji Nakamura, Kenji Shiraishi, Naoto Umezawa, Kikuo Yamabe, Osamu Ogawa, Myoungbum Lee, Toshio Amiaka, Tooru Kasuya, Heiji Watanabe, Toyohiro Chikyow, Fumio Ootsuka, Yasuo Nara, Kunio Nakamura

Japanese Journal of Applied Physics, Part 2: Letters　Vol. 45　No. 46-50　p. L1289-L1292　2006/12　Research paper (scientific journal)

A New Theoretical Insight for the Schottky Barrier Heights

K. Shiraishi, T. Nakayama, S. Okada, Y. Akasaka, S. Miyazaki, T. Nakaoka, A. Ohta, K. Torii, H. Watanabe, T. Chikyow, Y. Nara, K. Yamada

International Conference on Quantum Simulators and Design, O-9, Hiroshima, Japan, 2006.　2006/12

Physical and Electrical Characterization of HfSix/HfO2 Gate Stacks for High-Performance nMOSFET Application

S. Yoshida, Y. Kita, T. Ando, K. Tai, H. Iwamoto, T. Shimura, H. Watanabe, K. Yasutake

Abstracts of 37th IEEE Semiconductor Interface Specialists Conference 3-3.　2006/12

Structural Change of the Interfacial SiO$_2$ Layer between HfO$_2$ layers and Si Substrates

Takayoshi Shimura, Eiji Mishima, Kohta Kawamura, Heiji Watanabe, Kiyoshi Yasutake

Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices - Science and Technology　2006/11

Interface Engineering of High-k Gate Dielectrics for Advanced CMOS (INVITED)

H. Watanabe

Abstracts of Handai Nanoscience and Technology International Symposium 2006, pp. 30, Osaka, Japan.　2006/11

大気圧プラズマによるSi表面の高速酸化

原田真, 垣内弘章, 大参宏昌, 渡部平司, 安武潔

薄膜材料デバイス研究会 第3回研究集会予稿集「薄膜デバイスの新展開」pp. 149.-150.　2006/11

A. New Insight into Control of Fermi Level Pinning in TiN/HfSiON Gate Stacks

A. Ohta, S. Miyazaki, Y. Akasaka, H. Watanabe, K. Shiraishi, K. Yamada, S. Inumiya, Y. Nara

Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices –Science and Technology-, pp.61-62, Kanagawa, Japan　2006/11

Low-temperature crystallization of amorphous silicon by atmospheric-pressure plasma treatment in H2/He or H2/Ar mixture

Hiromasa Ohmi, Hiroaki Kakiuchi, Kenichi Nishijima, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 45　No. 10 B　p. 8488-8493　2006/10/21　Research paper (scientific journal)

Low-temperature growth of epitaxial Si films by atmospheric pressure plasma chemical vapor deposition using porous carbon electrode

Hiromasa Ohmi, Hiroaki Kakiuchi, Naotaka Tawara, Takuya Wakamiya, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 45　No. 10 B　p. 8424-8429　2006/10/21　Research paper (scientific journal)

The Origin of Long-range Contrast in Hf-silicate Films Observed by Scanning Capacitance Microscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, H. Watanabe, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Systematic Study on Effective Work Functions for Poly-Si and Fully Silicided NiSi Electrodes on Hf-based Gate Dielectrics

K. Manabe, T. Hase, T. Tatsumi, H. Watanabe, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

PVD-based In-situ Fabrication Method for Improving the Electrical Properties of Metal/High-k Gate Stacks

S. Horie, T. Minami, N. Kitano, M. Kosuda, H. Watanabe, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Oxidation Rate Diminidhment of SiGe Epitaxial Films on Silicon-on-insulator Wafers

S. Horiuchi, M. Shimizu, T. Shimura, H. Watanabe, K. Yasutake

2006/10

Interface Reactions at TiN/HfSiON Gate Stacks Depending on the Electrode Structure and Deposition Method

S. Yoshida, Y. Watanabe, Y. Kita, T. Shimura, H. Watanabe, K. Yasutake, Y. Akasaka, Y. Nara, K. Yamada

2006/10

High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma

M. Harada, H. Kakiuchi, H. Ohmi, H. Watanabe, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Fabrication of Polycrystalline Thin Films on Glass Substrates Using Ge Nano-Islands and Nuclei

K. Minami, C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vappor Deposition

N. Tawara, H. Ohmi, Y. Terai, T. Shimura, H. Kakiuchi, H. Watanabe, Y. Fujiwara, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Atomospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode

M. Harada, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Structural Change of the Thermal Oxide Layer on Si Substrates by Diffusion of Atomic Oxygen

Takayoshi Shimura, Eiji Mishima, Kohta Kawamura, Heiji Watanabe, Kiyoshi Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology　2006/10

Oxidation Rate Diminishment of SiGe Epitaxial Films on Silicon-on-insulator Wafers

S. Horiuchi, M. Shimizu, T. Shimura, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.155-156, Osaka, Japan.　2006/10

The Origin of Long-range Contrast in Hf-silicate Films Observed by Scanning Capacitance Microscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.153-154, Osaka, Japan.　2006/10

Systematic Study on Effective Work Functions for Poly-Si and Fully Silicided NiSi Electrodes on Hf-based Gate Dielectrics

K. Manabe, T. Hase, T. Tatsumi, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.151-152, Osaka, Japan.　2006/10

PVD-based In-situ Fabrication Method for Improving the Electrical Properties of Metal/High-k Gate Stacks

S. Horie, T. Minami, N. Kitano, M. Kosuda, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.149-150, Osaka, Japan.　2006/10

Interface Reactions at TiN/HfSiON Gate Stacks Depending on the Electrode Structure and Deposition Method

S. Yoshida, Y. Watanabe, Y. Kita, T. Shimura, H. Watanabe, K. Yasutake, Y. Akasaka, Y. Nara, K. Yamada

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.147-148, Osaka, Japan.　2006/10

High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma

M. Harada, H. Kakiuchi, H. Ohmi, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.78-79, Osaka, Japan.　2006/10

Atmospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode

M. Harada, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.75-76, Osaka, Japan.　2006/10

Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition

N. Tawara, H. Ohmi, Y. Terai, T. Shimura, H. Kakiuchi, H. Watanabe, Y. Fujiwara, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan.　2006/10

Fabrication of Polycrystalline Thin Films on Glass Substrates Using Ge Nano-Islands and Nuclei

K. Minami, C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.65-66, Osaka, Japan.　2006/10

Dopant Concentration Influence on Scanning Capacitance Microscopy Imaging in Ultrathin SiO2 Films

Y. Naitou, A. Ando, H. Ogiso, H. Watanabe, K. Yasutake

Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices –Science and Technology-, pp.21-22, Kanagawa, Japan　2006/10

Characterization of metal/high-k structures using a monoenergetic positron beam

A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, Y. Akasaka, S. Kamiyama, Y. Nara, K. Yamada

Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices –Science and Technology-, pp.51-52, Kanagawa, Japan　2006/10

Oxidation process of HfO2/SiO2/Si structures observed by high-resolution RBS

Z. Ming, K. Nakajima, M. Suzuki, K. Kimura, M. Uematsu, K. Torii, S. Kamiyama, Y. Nara, H. Watanabe, K. Shiraishi, T. Chikyow, K. Yamada

International Conference on Solid-State and Integrated-Circuit Technology, Shanghai, China, 2006　p. 392-396　2006/10　Research paper (international conference proceedings)

Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates

K. Yasutake, H. Watanabe, H. Ohmi, H. Kakiuchi

Meeting Abst. MA2006-02 Joint Int. Meeting of 210th Meeting of The Electrochemical Society and XXI Congreso de la Sociedad Mexicana de Electroquimica, Oct. 29-Nov. 3, 2006. Cancun, Mexico, (2006) #1575.　2006/10

Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, Y. Akasaka, S. Kamiyama, Y. Nara, K. Yamada

Journal of Applied Physics　Vol. 100　No. 6　p. 064501-064501　2006/09/15　Research paper (scientific journal)

High-resolution RBS analysis of Si-dielectric interfaces

Z. Ming, K. Nakajima, M. Suzuki, K. Kimura, M. Uematsu, K. Torii, S. Kamiyama, Y. Nara, H. Watanabe, K. Shiraishi, T. Chikyow, K. Yamada

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.380-381.　2006/09

Spatial Fluctuation of Electrical Properties in Hf-Silicate Film Observed with Scanning Capacitance Microscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, H. Watanabe, K. Yasutake

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.392-393.　Vol. 2006　p. 392-393　2006/09

Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks

S. Horie, T. Minami, N. Kitano, M. Kosuda, H. Watanabe, K. Yasutake

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.414-415.　2006/09

Low-Leakage-Current Ultra-thin SiO2 Films by Low-Temperature Neutral Beam Oxidation

T. Ikoma, C. Taniguchi, S. Fukuda, K. Endo, H. Watanabe, S. Samukawa

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.448-449.　2006/09

Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃)

N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, Y. Fujiwara, K. Yasutake

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095.　2006/09

Sample Tilting Technique for Preventing Electrostatic Discharge during High-current FIB Gas-assisted Etching with XeF2

H. Komoda, C. Moritani, K. Takahashi, H. Watanabe, K. Yasutake

Microelectronics Reliability (in press, online 19 June)　2006/06　Research paper (scientific journal)

Novel Charge Neutralization Techniques Applicable to Wide Current Rage of FIB Processing in FIB-EB Combined System

H. Komoda, M. Yoshida, Y. Yamamoto, K. Iwasaki, I. Nakatani, H. Watanabe, K. Yasutake

Microelectronics Reliability (in press, online June 5)　2006/06　Research paper (scientific journal)

Sub-1nm EOT HfSix/HfO2 Gate Stack Using Novel Si Extrusion Process for High Performance Application

T. Ando, T. Hirano, K. Tai, S. Yamaguchi, T. Kato, Y. Hagimoto, K. Watanabe, R. Yamamoto, S. Kanda, K. Nagano, S. Terauchi, Y. Tateshita, Y. Tagawa, M. Saito, H. Iwamoto, S. Yoshida, H. Watanabe, N. Nagashima, S. Kadomura

Digest of Technical Papers 2006 Symposium on VLSI Technilogy　2006/06

Mechanism of Fermi-Level Pinning for n-like Metal Silicides on Hf-based Gate Dielectrics

K. Shiraishi, H. Takeuchi, Y. Akasaka, H. Watanabe, N. Umezawa, T. Chikyow, Y. Nara, T.-J. King Liu, K. Yamada

Proceedings of 2006 IEEE Si Nanoelectronics Workshop　2006/06

Extensive Studies for Effects of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics

N. Umezawa, K. Shiraishi, H. Watanabe, K. Torii, Y. Akasaka, S. Inumiya, M. Boero, A. Uedono, S. Miyazaki, T. Ohno, T. Chikyow, K. Yamabe, Y. Nara, K. Yamada

ETS Trans.　Vol. 2　No. 1　p. 63-78　2006/05　Research paper (scientific journal)

New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces -Application to Metal/High-k HfO2 and La2O3 Dielectric Interfaces- (INVITED)

K. Shiraishi, T. Nakayama, Y. Akasaka, S. Miyazaki, T. Nakaoka, K. Ohmori, P. Ahmet, K. Torii, H. Watanabe, T. Chikyow, Y. Nara, H. Iwai, K. Yamada

209th Electrochemical Society Meeting, 2006, Denver　Vol. 2　No. 1　p. 25-40　2006/05　Research paper (international conference proceedings)

Extensive Studies for the Effect of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics (INVITED)

N. Umezawa, K. Shiraishi, H. Watanabe, K. Torii, Y. Akasaka, S. Inumiya, M. Boero, A. Uedono, S. Miyazaki, T. Ohno, T. Chikyow, K. Yamabe, Y. Nara, K. Yamada

209th Electrochemical Society Meeting, 2006, Denver　Vol. 2　No. 1　p. 63-78　2006/05　Research paper (international conference proceedings)

Characterization of epitaxial si films grown by atmospheric pressure plasma chemical vapor deposition using cylindrical rotary electrode

Kiyoshi Yasutake, Hiromasa Ohmi, Hiroaki Kakiuchi, Takuya Wakamiya, Heiji Watanabe

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 45　No. 4 B　p. 3592-3597　2006/04/25　Research paper (scientific journal)

Thermal degradation of HfSiON dielectrics caused by TiN gate electrodes and its impact on electrical properties

Heiji Watanabe, Shiniti Yoshida, Yasumasa Watanabe, Takayoshi Shimura, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Kunio Nakamura, Keisaku Yamada

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 45　No. 4 B　p. 2933-2938　2006/04/25　Research paper (scientific journal)

Analysis of origin of threshold voltage change induced by impurity in fully silicided NiSi/SiO2 gate stacks

Kenzo Manabe, Kensuke Takahashi, Takashi Hase, Nobuyuki Ikarashi, Makiko Oshida, Toru Tatsumi, Hirohito Watanabe, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 45　No. 4 B　p. 2919-2924　2006/04/25　Research paper (scientific journal)

Unique behavior of F-centers in high-k Hf-based oxides

N. Umezawa, K. Shiraishi, T. Ohno, M. Boero, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, Y. Nara

Physica B: Condensed Matter　Vol. 376-377　p. 392-394　2006/04　Research paper (scientific journal)

Application of Synchrotron X-ray Diffraction Methods to Thin Film Materials used in Semiconductor Devices

Takayoshi Shimura, Eiji Mishima, Heiji Watanabe, Kiyoshi Yasutake

Extended Abstract of International Meeting for Future of Electron Devices, Kansai　2006/04

A new theory of the Schottky barrier heights at metal/metal oxide interfaces based on the first principles calculations (INVITED)

K. Shiraishi, T. Nakayama, Y. Akasaka, S. Miyazaki, T. Nakaoka, K. Ohmori, P. Ahmet, K. Torii, H. Watanabe, T. Chikyow, Y. Nara, H. Iwai, K. Yamada

Abstracts of Computational Science Workshop　2006/04

Surface Cleaning and Etching of 4H-SiC(0001) using Atmospheric Pressure Hydrogen Plasma

Heiji Watanabe, Shigenari Okada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

Materials Research Society (MRS) Spring Meeting, 2006, San Francisco, CA.　2006/04

Novel Charge Neutralization Techniques Applicable to Wide Current Range of FIB Processing in FIB-SEM Combined System

Hirotaka Komoda, Masaaki Yoshida, Yoh Yamamoto, Kouji Iwasaki, Ikuko Nakatani, Heiji Watanabe, Kiyoshi Yasutake

Microelectronics ReliabilityJournal (in press).　2006/04　Research paper (scientific journal)

Theoretical Investigation of the Interface between Hf-based High-k Dielectrics and Poly-Si and Metal gates (INVITED)

K. Shiraishi, T. Nakayama, Y. Akasaka, S. Miyazaki, T. Nakaoka, K. Ohmori, P. Ahmet, K. Torii, H. Watanabe, T. Chikyow, Y. Nara, K. Yamada

ECS-SEMI International Semiconductor Technology Conference, 2006, Shanghai.　Vol. PV 2006-03　p. 320-329　2006/03　Research paper (international conference proceedings)

Residual Order in Thermal Oxide Layers and Its applicatioin to the Study of Interface Reaction

T. Shimura, E. Mishima, H. Watanabe, K. Yasutake, M. Umeno, K. Tatsumura, T. Watanabe, I. Ohdomaroi

2006/02

メタル電極形成条件がMetal/HfSiON界面反応と電気特性に及ぼす影響

吉田慎一, 渡辺康匡, 喜多祐起, 志村考功, 渡部平司, 安武潔, 赤坂泰志, 奈良安雄, 白石賢二, 山田啓作

ゲートスタック研究会－材料・プロセス・評価の物理－（第11回研究会）　2006/02

NiSiフルシリサイド/SiO2ゲートスタックにおける不純物によるしきい値変化メカニズム

間部謙三, 長谷卓, 五十嵐信行, 忍田真希子, 辰巳徹, 渡部平司, 安武潔, 渡辺啓仁

ゲートスタック研究会－材料・プロセス・評価の物理－（第11回研究会）　2006/02

Ⅶ、ⅧおよびⅠB族金属材料のpMOS用メタルゲート適用検討

中村源治志, 赤坂泰志, 渡部平司, 大塚文雄, 奈良安雄

ゲートスタック研究会－材料・プロセス・評価の物理－　2006/02

走査型容量顕微鏡によるHf系ゲート絶縁膜の誘電特性の空間分布

内藤裕一, 安藤敦, 小木曽久人, 神山聡, 奈良安雄, 中村邦雄, 渡部平司, 安武潔

ゲートスタック研究会－材料・プロセス・評価の物理－（第11回研究会）　2006/02

酸素中性ビーム粒子を用いた極薄酸化膜の形成

田口智啓, 生駒篤亨, 福田誠一, 遠藤和彦, 渡部平司, 寒川誠二

ゲートスタック研究会－材料・プロセス・評価の物理－（第11回研究会）　2006/02

金属電極/High-k絶縁膜キャパシタのフラットバンド電圧特性に与える仕事関数変調及び熱処理の影響

大毛利健治, Parhat Ahmet, 白石賢二, 渡部平司, 赤坂泰志, 山部紀久夫, 吉武道子, K.-S. Chang, M.L.Green, 山田啓作, 知京豊裕

ゲートスタック研究会-材料・プロセス・評価の物理-(第11回研究会)　2006/02

Oxidation saturation of SiGe alloy on silicon-on-insulator wafers

T. Shimura, M. Shimizu, S. Horiuchi, H. Watanabe, K. Yasutake

ECS Transactions　Vol. 3　No. 7　p. 1033-1037　2006　Research paper (international conference proceedings)

Physics of metal/high-k interfaces

Takashi Nakayama, Kenji Shiraishi, Seiichi Miyazaki, Yasushi Akasaka, Takashi Nakaoka, Kazuyoshi Torii, Akio Ohta, Parhat Ahmet, Kenji Ohmori, Naoto Umezawa, Heiji Watanabe, Toyohiro Chikyow, Yasuo Nara, Hiroshi Iwai, Keisaku Yamada

ECS Transactions　Vol. 3　No. 3　p. 129-140　2006　Research paper (international conference proceedings)

Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

ECS Transactions　Vol. 3　No. 3　p. 351-362　2006　Research paper (international conference proceedings)

Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers

Takayoshi Shimura, Michihiro Shimizu, Shinichiro Horiuchi, Heiji Watanabe, Kiyoshi Yasutake, Masataka Umeno

Applied Physics Letters　Vol. 89　No. 11　2006　Research paper (scientific journal)

Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

ECS Transactions　Vol. 3　No. 3　p. 351-362　2006　Research paper (international conference proceedings)

Physics of metal/high-k interfaces

Takashi Nakayama, Kenji Shiraishi, Seiichi Miyazaki, Yasushi Akasaka, Takashi Nakaoka, Kazuyoshi Torii, Akio Ohta, Parhat Ahmet, Kenji Ohmori, Naoto Umezawa, Heiji Watanabe, Toyohiro Chikyow, Yasuo Nara, Hiroshi Iwai, Keisaku Yamada

ECS Transactions　Vol. 3　No. 3　p. 129-140　2006　Research paper (international conference proceedings)

Ge nuclei for fabrication of poly-Si thin films on glass substrates

K. Yasutake, H. Watanabe, H. Ohmi, H. Kakiuchi

ECS Transactions　Vol. 3　No. 8　p. 215-225　2006　Research paper (international conference proceedings)

Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers

Takayoshi Shimura, Michihiro Shimizu, Shinichiro Horiuchi, Heiji Watanabe, Kiyoshi Yasutake, Masataka Umeno

Applied Physics Letters　Vol. 89　No. 11　2006　Research paper (scientific journal)

Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

ECS Transactions　Vol. 3　No. 3　p. 351-362　2006　Research paper (international conference proceedings)

Low-temperature Growth of Epitaxial Silicon films by Atmospheric Pressure Plasma Chemical Vapor Deposition

Hiromasa Ohmi, Hiroaki Kakiuchi, Naotaka Tawara, Takuya Wakamiya, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Proceedings of the 6th ICRP and 23rd SPP　2006/01　Research paper (international conference proceedings)

Characterization of high pressure (200-760Torr), stable glow plasma of pure hydrogen by measuring etching properties of Si and optical emission spectroscopy

Hiromasa Ohmi, Hiroaki Kakiuchi, Yoshiki Ogiyama, Heiji Watanabe, Kiyoshi Yasutake

Proceedings of the 6th ICRP and 23rd SPP　2006/01　Research paper (international conference proceedings)

low temperature crystallization of amorphous silicon by atmospheric pressure plasma treatment in H2/He or H2/Ar mixtures

Hiromasa Ohmi, Hiroaki Kakiuchi, Kenichi Nishijima, Heiji Watanabe, Kiyoshi Yasutake

Proceedings of the 6th ICRP an 23rd SPP　2006/01　Research paper (international conference proceedings)

Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces : Guiding principles for gate metal selection

SHIRAISHI K., AKASAKA Y., MIYAZAKI S., NAKAYAMA T., NAKAOKA T., NAKAMURA G., TORII K., OHTA A., AHMET P., OHMORI K., WATANABE H., CHIKYOW T., GREEN M. L., NARA Y., YAMADA K.

IEICE technical report　Vol. 105　No. 541　p. 29-32　2006/01

Influences of Annealing Conditions on Flatband Voltage Properties Using Continuously

Kenji Ohmmori, Parhat Ahmet, Kenji Shiraishi, Heiji Watanabe, Yasushi Akasaka, Kikuo Yamabe, King, S. Chang, Martin G. Green, Keisaku Yamada, Toyohiro Chikyow

International Workshop on Nano CMOS, 2006, Mishima, Shizuoka.　p. 160-162　2006/01　Research paper (international conference proceedings)

New findings in nano-scale interface physics and their relations to nano-CMOS technologies

K. Shiraishi, Y. Akasaka, K. Torii, T. Nakayama, S. Miyazaki, T. Nakaoka, H. Watanabe, K. Ohmori, P. Ahmet, T. Chikyow, Y. Nara, K. Yamada

2006 International Workshop on Nano CMOS - Proceedings, IWNC　p. 180-208　2006　Research paper (international conference proceedings)

Universal theory of Workfunctions at Metal/Hf-based High-k Dielectrics Interfaces -Guiding principles for gate metal selection-

K. Shiraishi, Y. Akasaka, S. Miyazaki, T. Nakayama, T. Nakaoka, G. Nakamura, K. Torii, H. Furutou, A. Ohta, P. Ahmet, K. Ohmori, H. Watanabe, T. Chikyow, M. L. Green, Y. Nara, K. Yamada

Technical Digest of International Electron Devices Meeting, 2005, Washington DC, pp.2.5.1-4.　Vol. 2005　p. 39-42　2005/12　Research paper (international conference proceedings)

Influence of Continuous Work Function Variation on Electric Properties by Combinatorial Materials Deposition Method

K. Ohmori, P. Ahmet, D. Kukuruznyak, T. Nagata, K. Nakajima, K. Shiraishi, K. Yamabe, H. Watanabe, K. Yamada, G. Richter, T. Wagner, C. Chang, M. Green, T. Chikyow

Abstracts of 36th IEEE Semiconductor Interface Specialists Conference, 2005, Arlington, VA.　2005/12

Effects of Intrinsic and Extrinsic Reactions at Metal/High-k Interfaces on Electrical Properties of Gate Stacks

H. Watanabe, S. Yoshida, Y. Watanabe, E. Mishima, K. Kawamura, Y. Kita, T. Shimura, K. Yasutake, Y. Akasaka, Y. Nara, K. Shiraishi, K. Yamada

Abstracts of 36th IEEE Semiconductor Interface Specialists Conference, 2005, Arlington, VA.　2005/12

Antistatic technique for suppressing charging in focused ion beam systems using microprobing and ion-beam-assisted deposition

Hirotaka Komoda, Ikuko Nakatani, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 44　No. 11　p. 7907-7909　2005/11/09　Research paper (scientific journal)

Mapping of the local dielectric properties of Hf-based high-k films by scanning capacitance microscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Nakamura, H. Watanabe, K. Yasutake

Abstracts of International Symposium on Surface Science and Nanotechnology, p.133.　2005/11

次世代MOSFETゲート絶縁膜のナノスケール評価と新プロセス提案

渡部平司

第9回関西半導体解析技術研究会　2005/11

シリコン系薄膜の大気圧プラズマCVDおよびエピタキシャル成長

安武潔, 垣内弘章, 大参宏昌, 渡部平司

薄膜材料デバイス研究会第2回研究集会「低温プロセスの再発見」アブストラクト集（2005）　2005/11

Ordered Structure in the Thermal Oxide Layer on Silicon Substrates

Takayoshi Shimura, Eiji Mishima, Heiji Watanabe, Kiyoshi Yasutake, Masataka Umeno, Kousuke Tatsumura, Takanobu Watanabe, Iwao Ohdomari, Keisaku Yamada, Satoshi Kamiyama, Yasushi Akasaka, Yasuo Nara, Kunio Nakamura

Physics and Chemistry of SiO$_2$ and the Si-SiO$_2$ Interface 5　2005/10

High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmoshperis Pressure Plasma CVD

Takuya Wakamiya, Hiromasa Ohmi, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake, Kumayasu Yoshii, Yuso Mori

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials　2005/09

Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties

Heiji Watanabe, Shiniti Yoshida, Yasumasa Watanabe, Takayoshi Shimura, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Kunio Nakamura, Keisaku Yamada

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials　Vol. 45　No. 4　p. 2933-2938　2005/09

高誘電率ゲート絶縁膜開発の現状

渡部平司

生産と技術　2005/07　Research paper (scientific journal)

Negative-U Behavior in the Complex of an O Vacancy and a Metal Impurity in High-k Dielectrics HfO2

K. Shiraishi, T. Nakayama, S. Miyazaki, K.Torii, Y. Akasaka, H. Watanabe, T. Chikyow, K. Yamada, Y. Nara

The 23rd International Conference on Defects in Semiconductors　2005/07

Unique Behavior of F-Centers in High-k Hf-based Oxides

Naoto Umezawa, Kenji Shiraishi, Takahisa Ohno, Mauro Boero, Heiji Watanabe, Toyohiro Chikyow, Kazuyoshi Torii, Kikuo Yamabe, Keisaku Yamada, Yasuo Nara

The 23rd International Conference on Defects in Semiconductors　2005/07

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. Arikado

Applied Physics Letters　Vol. 86　No. 14　p. 143507-143507　2005/04/04　Research paper (scientific journal)

High-mobility dual metal gate MOS transistors with high-k gate dielectrics

Kensuke Takahashi, Kenzo Manabe, Ayuka Morioka, Taeko Ikarashi, Takuya Yoshihara, Heiji Watanabe, Toru Tatsumi

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 44　No. 4 B　p. 2210-2213　2005/04　Research paper (international conference proceedings)

Fully silicided NiSi gate electrodes on HfSiON gate dielectrics for low-power applications

Kenzo Manabe, Kensuke Takahashi, Taeko Ikarashi, Ayuka Morioka, Heiji Watanabe, Takuya Yoshihara, Toru Tatsumi

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 44　No. 4 B　p. 2205-2209　2005/04　Research paper (international conference proceedings)

1.2 nm HfSiON/SiON stacked gate insulators for 65-nm-Node MISFETs

Motofumi Saitoh, Masayuki Terai, Nobuyuki Ikarashi, Heiji Watanabe, Shinji Fujieda, Toshiyuki Iwamoto, Takashi Ogura, Ayuka Morioka, Koji Watanabe, Toru Tatsumi, Hirohito Watanabe

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 44　No. 4 B　p. 2330-2335　2005/04　Research paper (international conference proceedings)

Intrinsic Effect of a Nitrogen Atom on Hf-based High-k Gate Dielectrics -A First Principles Study-

Naoto Umezawa, Kenji Shiraishi, Takahisa Ohno, Heiji Watanabe, Toyohiro Chikyow, Kazuyoshi Torii, Kikuo Yamabe, Keisaku Yamada, Hiroshi Kitajima, Tsunetoshi Arikado

American Physical Society (APS) March Meeting 2005　2005/03

Formation of Crystalline Ge Islands on Glass Substratesfor Growth of Large-Grained Polycrystalline Si Thin Films

K. Yasutake, H. Watanabe, H. Ohmi, H. Kakiuchi, S. Koyama, D. Nakajima, K. Minami

Proceedings of Thin Film Materials & Devices Meeting, Nov.12-13, 2004, Nara-Shi Asunara Conference Hall, pp.19-24　2005/02　Research paper (international conference proceedings)

Spatial fluctuation of dielectric properties in Hf-based high- k gate films studied by scanning capacitance microscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Nakamura, H. Watanabe, K. Yasutake

Applied Physics Letters　Vol. 87　No. 25　p. 1-3　2005　Research paper (scientific journal)

Role of nitrogen incorporation into Hf-based high-&amp; gate dielectrics for termination of local current leakage paths

Heiji Watanabe, Satoshi Kamiyama, Naoto Umezawa, Kenji Shiraishi, Shiniti Yoshida, Yasumasa Watanabe, Tsunetoshi Arikado, Toyohiro Chikyow, Keisaku Yamada, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 2: Letters　Vol. 44　No. 42-45　p. L1333-L1336　2005　Research paper (scientific journal)

The role of nitrogen incorporation in Hf-based high-k dielectrics: Reduction in electron charge traps

Naoto Umezawa, Kenji Shiraishi, Kazuyoshi Torii, Mauro Boero, Toyohiro Chikyow, Heiji Watanabe, Kikuo Yamabe, Takahisa Ohno, Keisaku Yamada, Yasuo Nara

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference　Vol. 2005　p. 201-204　2005　Research paper (international conference proceedings)

Charge neutralization using focused 500 eV electron beam in focused ion beam system

Hirotaka Komoda, Masaaki Yoshida, Yoh Yamamoto, Kouji Iwasaki, Heiji Watanabe, Kiyoshi Yasutake

Japanese Journal of Applied Physics, Part 2: Letters　Vol. 44　No. 16-19　p. L515-L517　2005　Research paper (scientific journal)

HfSiON膜中の局所絶縁劣化箇所のC-AFM観測－窒化による信頼性向上メカニズムの検討－

渡辺康匡, 志村考功, 渡部平司, 安武潔, 神山聡, 有門経敏, 白石賢二, 梅澤直人, 知京豊裕, 山田啓作

ゲートスタック研究会（第10回特別研究会）講演予稿集 p.327-331.　2005/01

コンビナトリアル成膜Pt-Wメタルゲート電極の仕事関数マッピング

吉田慎一, 渡部平司, 安武潔, Ahmet Parhat, 知京豊裕, 山田啓作

ゲートスタック研究会（第10回特別研究会）講演予稿集 p.271-274.　2005/01

ニッケルフルシリサイド電極のHfSiONゲート絶縁膜への適用

間部謙三, 高橋健介, 五十嵐多恵子, 森岡あゆ香, 渡部平司, 辰巳徹

ゲートスタック研究会（第10回特別研究会）講演予稿集 p.231-236.　2005/01

デュアルメタル電極/HfSiOゲート絶縁膜MOSトランジスタの作製と電気特性の評価

高橋健介, 間部謙三, 森岡あゆ香, 五十嵐多恵子, 吉原拓也, 渡部平司, 辰巳徹

ゲートスタック研究会（第10回特別研究会）講演予稿集 p.221-225.　2005/01

Hfを基礎としたHigh-kゲート絶縁膜のリーク電流を減少させるN原子の本質的な効果：酸素原子空孔に起因するリークパスを遮断するN原子の役割

梅澤直人, 白石賢二, 大野隆央, 渡部平司, 知京豊裕, 鳥居和功, 山部紀久夫, 山田啓作, 北島洋, 有門経敏

ゲートスタック研究会（第10回特別研究会）講演予稿集 p.115-119.　2005/01

高誘電率(High-k)膜形成技術の現状と今後の展望

渡部平司

第4回インテリジェント・ナノプロセス研究会予稿原稿p.47-55.　2004/12

Dual Workfunction Ni-Silicide/HfSiON Gate Stacks by Phase-Controlled Full-Silicidation (PC-FUSI) Technique for 45nm-node LSTP and LOP Devices

K. Takahashi, K. Manabe, T. Ikarashi, N. Ikarashi, T. Hase, T. Yoshihara, H. Watanabe, T. Tatsumi, Y. Mochizuki

Technical Digest of International Electron Devices Meeting, San Francisco, CA　2004/12

Intrinsic Effects of a Nitrogen Atom for Reduction in Leakage Current through Hf-based High-k Gate Dielectrics -Nitrogen Induced Atomistic Cutoff of O Vacancy Mediated Leakage Paths-

N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. Arikado

Extended Abstracts of 35th IEEE Semiconductor Interface Specialists Conference, San Diego, CA　2004/12

Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching

Kiyoshi YASUTAKE, Hiromasa OHMI, Hiroaki KAKIUCHI, Heiji WATANABE, Kumayasu YOSHII, Yuzo MORI

Jpn. J. Appl. Phys. Vol.43 (2004) No.12A pp.L1552-L1554　2004/12　Research paper (scientific journal)

Origin of flatband voltage shift in poly-Si/Hf-bsed high-k gate dielectrics and flatband voltage dependence on gate stack structure

Makoto Miyamura, Koji Masuzaki, Heiji Watanabe, Nobuyuki Ikarashi, Toru Tatsumi

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 43　No. 11 B　p. 7843-7847　2004/11　Research paper (international conference proceedings)

大粒径多結晶Si薄膜作製のためのGe微結晶核を利用した基板表面制御

小山晋, 中嶋大貴, 南綱介, 大参宏昌, 渡部平司, 安武潔, 森勇藏

薄膜材料デバイス研究会第１回研究会「TFTのすべて」アブストラクト集(2004) p.36, p.67　2004/11

Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application

Kenzo Manabe, Kensuke Takahashi, Ayuka Morioka, Heiji Watanabe, Takuya Yoshihara, Toru Tatsumi

Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2004, Tokyo, pp.18-19.　2004/09

1.2nm HfSiON/SiON Stacked Gate Insulators for 65nm-node MISFETs

Motofumi Saitoh, Nobuyuki Ikarashi, Heiji Watanabe, Shinji Fujieda, Hirohito Watanabe, Toshiyuki Iwamoto, Ayuka Morioka, Takashi Ogura, Masayuki Terai, Koji Watanabe, Makoto Miyamura, Toru Tataumi, Taeko Ikarashi, Koji Masuzaki, Yukishige Saito, Yuko Yabe

Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2004, Tokyo, pp.38-39.　Vol. 2004　p. 38-39　2004/09

High Mobility Dual Metal Gate MOS Transisotrs with High-k Gate Dielectrics

Kensuke Takahashi, Kenzo Manabe, Ayuka Morioka, Taeko Ikarashi, Takuya Yoshihara, Heiji Watanabe, Toru Tatsumi

Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2004, Tokyo, pp.22-23.　2004/09

A 65nm-node LSTP (low standby power) poly-Si/a-Si/HfSiON transistor with high Ion-Istandby ratio and reliability

YASUDA Y.

VLSI Symp. Tech. Dig., 2004　2004/06

high-quality HfSi_xO_y gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal-Hf and SiO_2 underlayer

WATANABE H.

Appl. Phys. Lett.　Vol. 85　No. 3　p. 449-451　2004/06　Research paper (scientific journal)

Origin of Flatband Voltage Shift in Poly-Si/Hf-based High-k Gate Dielectrics and Vfb Dependence on Gate Stack Structure

Makoto Miyamura, Masakazu Masuzaki, Heiji Watanabe, Nobuyuki Ikarashi, Toru Tatsumi

Ext. Abst. of International Workshop on Dielectric Thin Films for Future ULIS Devices - Science and Technology, 2004, Tokyo, pp.13-14.　2004/05

High Quality HfSixOy Gate Dielectrics Fabricated by Solid Phase Reaction Between Metal Hf and SiO2 Underlayer

Heiji Watanabe, Motofumi Saitoh, Nobuyuki Ikarashi, Toru Tatsumi

Abst. of Material Research Society Spring Meeting, 2004, San Francisco, pp.101.　2004/04

A Highly Manufacturable Low Power and High Speed HfSiO CMOS FET with Dual Poly-Si Gate Electrodes

Toshiyuki Iwamoto, Takashi Ogura, Masayuki Terai, Hirohiro Watanabe, Heiji Watanabe, Nobuyuki Ikarashi, Makoto Miyamura, Toru Tatsumi, Motofumi Saitoh, Ayuka Morioka, Koji Watanabe, Yukishige Saito, Yuko Yabe, Taeko Ikarashi, Koji Masuzaki, Yukinori Mochizumi, Tohru Mogami

Tech. Digest Int. Electron Devices Meeting, 2003, Washington DC, pp.639-642.　2003/12

Roughness at ZrO2/Si interfaces induced by accelerated oxidation due to the metal oxide overlayer

Heiji Watanabe

Applied Physics Letters　Vol. 83　No. 20　p. 4175-4177　2003/11/17　Research paper (scientific journal)

La-silicate gate dielectrics fabricated by solid phase reaction between La metal and SiO2 underlayers

Heiji Watanabe, Nobuyuki Ikarashi, Fuminori Ito

Applied Physics Letters　Vol. 83　No. 17　p. 3546-3548　2003/10/27　Research paper (scientific journal)

High Mobility MISFET with Low Trapped Charge in HfSiO Films

MORIOKA A.

VLSI Symp., 2003　p. 165-166　2003/01

Ultrathin zirconium silicate gate dielectrics with compositional gradation formed by self-organized reactions

Heiji Watanabe

Applied Physics Letters　Vol. 81　No. 22　p. 4221-4223　2002/11/25　Research paper (scientific journal)

Ultrathin Zr Silicate Gate Dielectrics with Compositional Gradation

Heiji Watanabe

Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2002, Nagoya, pp.60-61.　2002/09

ZrO2/SiO2/Si界面制御とゲート絶縁膜への応用

渡部平司

Proc. the 62nd Symposium on Semiconductors and Integrated Circuits Technology, 2002, Tokyo, pp.13-18.　2002/06　Research paper (scientific journal)

2次電子像におけるSi(001)-2x1表面のドメインコントラストの起源

渡部平司, 市川昌和, 川村隆明

日本学術振興会第141委員会第107研究会資料、pp.46-51.　2002/03　Research paper (scientific journal)

Thermal decomposition of ZrO2/SiO2 bilayer on Si(001) caused by void nucleation and its lateral growth

Heiji Watanabe, Nobuyuki Ikarashi

Applied Physics Letters　Vol. 80　No. 4　p. 559-561　2002/01/28　Research paper (scientific journal)

Thermal Decomposition of ZrO2/SiO2 Bilayer on Si(001)

Heiji Watanabe

Proc. Int. Symposium on Atomic Level Characterization for New Materials and Devices, 2001, Nara, pp.367-370.　2001/11

Interfacial Reactions of ZrO2/SiO2/Si Layered Structures

Heiji Watanabe

Ext. Abst. Int. Conf. on Solid State Devices and Materials, 2001, Tokyo, pp.492-493.　2001/09

Interface engineering of a ZrO2/SiO2/Si layered structure by in situ reoxidation and its oxygen-pressure-dependent thermal stability

Heiji Watanabe

Applied Physics Letters　Vol. 78　No. 24　p. 3803-3805　2001/06/11　Research paper (scientific journal)

Dependence of Thermal Stability of ZrO2/SiO2/Si Layered Structure on Ambient Oxygen

Heiji Watanabe

Abst. Electronic Materials Conference, 2001, Indiana, pp.25.　2001/06

Origin of the Domain Contrast on a Si(001)-2x1 Surface Imaged by Secondary Electrons

Heiji Watanabe, Masakazu Ichikawa, Takaaki Kawamura

Appl. Phys. Lett. 78 (2001) 1255-1257.　2001/02　Research paper (scientific journal)

Layer-by-layer oxidation of Si(001) surfaces

Watanabe H, Miyata N, Ichikawa M

Fundamental Aspects of Silicon Oxidation　Vol. 46　p. 89-105　2001

シリコン表面の原子層単位の酸化反応

渡部平司, 宮田典幸, 市川昌和

日本物理学会誌、2000年11月号、pp.846-853.　Vol. 55　No. 11　p. 846-853　2000/11　Research paper (scientific journal)

Initial Oxynitridation of a Si(001)-2x1 Surface by NO

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Material Research Society Fall Meeting, 2000, Boston MRS Sym. Proc. 592, pp.233-238.　2000/11

Scanning reflection electron microscopy study of surface defects in GaN films formed by epitaxial lateral overgrowth

Heiji Watanabe, Naotaka Kuroda, Haruo Sunakawa, Akira Usui

Applied Physics Letters　Vol. 77　No. 12　p. 1786-1788　2000/09/18　Research paper (scientific journal)

Selective growth of nanocrystalline Si dots using an ultrathin-Si-oxide/oxynitride mask

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Applied Physics Letters　Vol. 77　No. 11　p. 1620-1622　2000/09/11　Research paper (scientific journal)

Crystallographic Structure of FIELO-GaN Films Studied by Scanning Reflection Electron Microscopy

Heiji Watanabe, Naotaka Kuroda, Haruo Sunakawa, Akita Usui

Proc. Int. Workshop on Nitride Semiconductors, 2000, Nagoya, pp.272-275.　2000/09

Initial Oxynitridation of a Si(001)-2x1 Surface by NO

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Appl. Phys. Lett. 76 (2000) 3561-3563.　2000/06　Research paper (scientific journal)

シリコン表面のLayer-by-layer酸化

渡部平司, 宮田典幸, 市川昌和

表面科学、2000年4月号、pp.32-37.　Vol. 20　No. 4　p. 250-255　2000/04　Research paper (scientific journal)

Mechanism of Layer-by-Layer Oxidation of Si(001) Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO2/Si Interfaces.

Watanabe Heiji, Baba Toshio, Ichikawa Masakazu

Japanese Journal of Applied Physics　Vol. 39　No. 4　p. 2015-2020　2000/04　Research paper (scientific journal)

Nanometer-Scale Characterization of Layer-by-Layer Oxidation of Si Surfaces

Heiji Watanabe, Noriyuki Miyata, Masakazu Ichikawa

Proc. 3rd SANKEN Int. Symposium on Advanced Nanoelectronics: Devices, Materials and Computing, 2000, Osaka, pp.120-121.　2000/03

Thermal decomposition of an ultrathin si oxide layer around a Si(001)- (2×1) window

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Physical Review Letters　Vol. 84　No. 5　p. 1043-1046　2000/01/31　Research paper (scientific journal)

Scanning tunneling microscopy and spectroscopy characterization of ion-beam-induced dielectric degradation in ultrathin SiO2 films and its thermal recovery process

Heiji Watanabe, Toshio Baba, Masakazu Ichikawa

Journal of Applied Physics　Vol. 87　No. 1　p. 44-48　2000/01/01　Research paper (scientific journal)

Nanometer-Scale Characterization of Layer-by-Layer Oxidation of Si Surfaces and Local Dielectric Properties of Ultrathin SiO2 Films (INVITED)

Heiji Watanabe, Toshio Baba, Masakazu Ichikw

International Symposium on Surface Science for Micro-and Nano-Devices Fabrication, 1999, Tokyo.　1999/11

Layer-by-Layer Oxidation of Silicon Surfaces

Heiji Watanabe, Noriyuki Miyata, Masakazu Ichikawa

Material Research Society Spring Meeting, 1999, San Francisco, MRS Sym. Proc. 567, pp.189-200.　1999/11

Initial Oxynitridation of Si(001)-2x1 Surface by Nitric Oxide: Interfacial Structure and Application for Si Selective Growth

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1999, Tokyo, pp.151-154.　1999/11

Local Dielectric Breakdown in Ultrathin SiO2 Films: Characterization by Scanning Tunneling Microscopy

Heiji Watanabe, Masakazu Ichikawa, Toshio Baba

NEC Research & Development 40 (1999) 410-413.　1999/10　Research paper (scientific journal)

Mechanism of Layer-by-Layer Oxidation of Si(001) Surfaces Proceeded by Two-Dimensional Oxide Island Nucleation at SiO2/Si Interfaces

Heiji Watanabe, Toshio Baba, Masakazu Ichikawa

Ext, Abst, Int. Conf. on Solid State Devices and Materials, 1999, Tokyo, pp.310-311.　1999/09

Nanometer-Scale Si-Selective Epitaxial Growth Using Ultrathin SiO2 Mask

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Abst. Int. Joint Conf. on Silicon Epitaxy and Heterostructures, 1999, Miyagi, B-　1999/09

Nanometer-Scale Characterization of Electrical Degradation in Ultrathin SiO2 Films Using a Scanning Probe Technique

Heiji Watanabe, Toshio Baba, Masakazu Ichikawa

Proc. Int. Conf. on Production Engineering, 1999, Osaka, pp.865-870.　1999/08

Reflection high-energy electron diffraction intensity oscillation during layer-by-layer oxidation of Si(001) surfaces

Heiji Watanabe, Toshio Baba, Masakazu Ichikawa

Applied Physics Letters　Vol. 74　No. 22　p. 3284-3286　1999/05/31　Research paper (scientific journal)

Nanometer-Scale Si-Selective Epitaxial Growth Using Ultrathin SiO2 Mask

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

J. Vac. Sci. Technol. B17 (1999) 978-982.　1999/05　Research paper (scientific journal)

Characterization of local dielectric breakdown in ultrathin SiO2 films using scanning tunneling microscopy and spectroscopy

Heiji Watanabe, Toshio Baba, Masakazu Ichikawa

Journal of Applied Physics　Vol. 85　No. 9　p. 6704-6710　1999/05/01　Research paper (scientific journal)

Nanometer-Scale Si Selective Growth Using Ultrathin SiO2 Mask

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Material Research Society Fall Meeting, 1998, Boston.　1998/11

Nanometer-Scale Si Selective Epitaxial Growth Using Ultrathin SiO2 Mask

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1998, Tokyo, pp.143-146.　1998/11

Atomic-Scale Structure of SiO2/Si Interfaces Formed by Furnace Oxidation

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Phys. Rev. B58 (1998) 13670-13676.　1998/11　Research paper (scientific journal)

Nanometer Fabrication Using Selective Thermal Decomposition of SiO2 Induced by Focused Electron Beams and Electron Beam Interference Fringes

Shinobu Fujita, Shigemitsu Maruno, Heiji Watanabe, Masakazu Ichikawa

J. Vac. Sci. Technol. B16 (1998) 2817-2821.　1998/09　Research paper (scientific journal)

Scanning tunneling microscopy study on void formation by thermal decomposition of thin oxide layers on stepped Si surfaces

Ken Fujita, Heiji Watanabe, Masakazu Ichikawa

Journal of Applied Physics　Vol. 83　No. 8　p. 4091-4095　1998/04/15　Research paper (scientific journal)

Scanning Tunneling Microscopy Study on the Surface and Interface of Si(111) / SiO2 Structures

Ken Fujita, Heiji Watanabe, Masakazu Ichikawa

J. Appl. Phys. 83 (1998) 3638-3642.　1998/04　Research paper (scientific journal)

Preservation of Atomic Flatness at SiO2/Si(111) Interface During Furnace Oxidation

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

American Physical Society March Meeting, 1998, Los Angeles.　1998/03

Observation and Creation of Current Leakage Sites in Ultrathin SiO2 Films Using Scanning Tunneling Microscopy

Heiji Watanabe, Masakazu Ichikawa

American Physical Society March Meeting, 1998, Los Angeles.　1998/03

Nanometer Si Selective Homoepitaxial Growth Observed by Scanning Tunneling Microscopy

Ken Fujita, Heiji Watanabe, Masakazu Ichikawa

J. Crystal Growth 188 (1998) 197-204.　1998/02　Research paper (scientific journal)

Influence of the Initial Si Surface Structure on SiO2/Si(111) Interfaces and Thermal Decomposition of the Oxide Films

Heiji Watanabe, Masakazu Ichikawa

Surf. Sci. 408 (1998) 95-100.　1998/02　Research paper (scientific journal)

Atomic-scale structure of interface formed by furnace oxidation

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Physical Review B - Condensed Matter and Materials Physics　Vol. 58　No. 20　p. 13670-13676　1998　Research paper (scientific journal)

HF-chemical etching of the oxide layer near a SiO2/Si(111) interface

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Applied Physics Letters　Vol. 73　No. 26　p. 3923-3925　1998　Research paper (scientific journal)

Void formation during thermal decomposition of ultrathin oxide layers on the Si(110) surface

Ken Fujita, Heiji Watanabe, Masakazu Ichikawa

Surface Science　Vol. 398　No. 1-2　p. 134-142　1998　Research paper (scientific journal)

Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy

Heiji Watanabe, Ken Fujita, Masakazu Ichikawa

Applied Physics Letters　Vol. 72　No. 16　p. 1987-1989　1998　Research paper (scientific journal)

Preservation of atomic flatness at SiO2/Si(111) interfaces during thermal oxidation in a furnace

Noriyuki Miyata, Heiji Watanabe, Masakazu Ichikawa

Applied Physics Letters　Vol. 72　No. 14　p. 1715-1717　1998　Research paper (scientific journal)

Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces

Heiji Watanabe, Koichi Kato, Tsuyoshi Uda, Ken Fujita, Masakazu Ichikawa, Takaaki Kawamura, Kiyoyuki Terakura

Physical Review Letters　Vol. 80　No. 2　p. 345-348　1998　Research paper (scientific journal)

Self-organized Ge clustering on partially Ga-terminated Si(111) surfaces

S. Maruno, S. Fujita, H. Watanabe, Y. Kusumi, M. Ichikawa

Journal of Applied Physics　Vol. 83　No. 1　p. 205-211　1998/01/01　Research paper (scientific journal)

Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO2 Layers Used in Nanofabrication.

Watanabe Heiji, Fujita Shinobu, Maruno Shigemitsu, Fujita Ken, Ichikawa Masakazu

Japanese Journal of Applied Physics　Vol. 36　No. 12　p. 7777-7781　1997/12　Research paper (scientific journal)

Layer-by-Layer Sputtering of Si(111) and (001) Surfaces Mediated by Surface Vacancy Diffusion: Surface Physics and Application for Nanofabrication

Heiji Watanabe, Masakazu Ichikawa

J. Vac. Sci. Technol. B15 (1997) 2666-2671.　1997/11　Research paper (scientific journal)

Layer-by-Layer Oxidation of Si(111) Surfaces and Thermal Decomposition of the Ultrathin Oxide Layers

Heiji Watanabe, Ken Fujita, Masakazu Ichikawa

Abst. Int. Symposium on Atomically Controlled Surfaces and Interfaces, 1997, Tokyo, pp.185-186.　1997/10

Oxidation of Partially Ga-Terminated Si(111) Surfaces

Shigemitsu Maruno, Shinobu Fujita, Heiji Watanabe, Masakazu Ichikawa

Surf. Sci. 377 (1997) 775-779.　1997/10　Research paper (scientific journal)

Layer-by-Layer Oxidation of Si(001) Surfaces

Heiji Watanabe, Ken Fujita, T. Kawamura, Masakazu Ichikawa

Ext. Abst. Int. Conf. Solid State Device and Materials, 1997, Hamamatsu, pp.538-539.　Vol. 39　No. 4　p. 2015-2020　1997/09

Selective thermal decomposition of ultrathin silicon oxide layers induced by electron-stimulated oxygen desorption

Heiji Watanabe, Shinobu Fujita, Shigemitsu Maruno, Ken Fujita, Masakazu Ichikawa

Applied Physics Letters　Vol. 71　No. 8　p. 1038-1040　1997/08/25　Research paper (scientific journal)

Observation of oxide/Si(001)-interface during layer-by-layer oxidation by scanning reflection electron microscopy

S. Fujita, H. Watanabe, S. Maruno, M. Ichikawa, T. Kawamura

Applied Physics Letters　Vol. 71　No. 7　p. 885-887　1997/08/18　Research paper (scientific journal)

In-situ Monitoring of Nanoscale Si Selective Epitaxial Growth on Si Surfaces Using Scanning Tunneling Microscopy

Ken Fujita, Heiji Watanabe, Masakazu Ichikawa

International Conference on Chemical Beam Epitaxy, 1997, Switerland.　1997/08

Observation of selective thermal desorption of electron stimulated SiO2 with a combined scanning reflection electron microscope/scanning tunneling microscope

S. Maruno, S. Fujita, H. Watanabe, M. Ichikawa

Journal of Applied Physics　Vol. 82　No. 2　p. 639-643　1997/07/15　Research paper (scientific journal)

Observation and Fabrication of Si Nanostructures by Scanning Reflection Electron Microscopy

Masakazu Ichikawa, Shinobu Fujita, Shigemitsu Maruno, Heiji Watanabe, Ken Fujita

Proc. Int. Centennial Symposium on the Electron, 1997, Cambridge, pp.389-396.　1997/07

Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO2 Layers Used in Nanofabrication.

Watanabe Heiji, Fujita Shinobu, Maruno Shigemitsu, Fujita Ken, Ichikawa Masakazu

Japanese Journal of Applied Physics　Vol. 36　No. 12　p. 7777-7781　1997/07

Initial Oxidation of Si(111) and (001) Surfaces and Nanofabrication Using Oxide Layers

Heiji Watanabe, Ken Fujita, Masakazu Ichikawa

Abst. One-Day Workshop on JRCAT Surface Science Activities, 1997, Tsukuba, pp.6.　1997/06

Nanoscale Si Selective Epitaxial Growth on Si(001) and Si(110) Surfaces Passivated with 0.3-nm-thick Oxide Layer

Ken Fujita, Heiji Watanabe, Masakazu Ichikawa

Abst. One-Day Workshop on JRCAT Surface Science Activities, 1997, Tsukuba, pp.5.　1997/06

Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films

Ken Fujita, Heiji Watanabe, Masakazu Ichikawa

Applied Physics Letters　Vol. 70　No. 21　p. 2807-2809　1997/05/26　Research paper (scientific journal)

Layer-by-Layer Sputtering of Si(111) and (001) Surfaces Mediated by Surface Vacancy Diffusion

Heiji Watanabe, Masakazu Ichikawa

Abst. Int. Conf. on Electron, Ion and Photon Beams and Nanotechnology, 1997, California, pp.57.　1997/05

Atomic-Step Observation at Buried SiO2/Si(111) Interfaces by Scanning Reflection Electron Microscopy

Heiji Watanabe, Ken Fujita, Masakazu Ichikawa

Surf. Sci. 385 (1997) L952-L957.　1997/04　Research paper (scientific journal)

Thermal decomposition of ultrathin oxide layers on Si(111) surfaces mediated by surface Si transport

Heiji Watanabe, Ken Fujita, Masakazu Ichikawa

Applied Physics Letters　Vol. 70　No. 9　p. 1095-1097　1997/03/03　Research paper (scientific journal)

Thermal Decomposition of Ultrathin Oxide Layers on Si(111) Surfaces Mediated by Surface Si Diffusion

Heiji Watanabe, Ken Fujita, Masakazu Ichikawa

Appl. Phys. Lett. 70 (1997) 1095-1097.　1997/03　Research paper (scientific journal)

Structural Transformation of Hydrogen-Adsorbed Si(111)-√3x√3-Ag Surfaces Induced by Electron-Stimulated Desorption

Heiji Watanabe, Masakazu Ichikawa

Surf. Sci. 383 (1997) 95-102.　1997/03　Research paper (scientific journal)

Observation of Thermal Desorption of Electron Stimulated SiO2 with a Combined SREM/STM

Shigemitsu Maruno, Shinobu Fujita, Heiji Watanabe, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1997, Tokyo, pp.65-68.　1997/01

Nanoscale Selective Si Epitaxial Growth on Si Surfaces with 0.3-nm-thick Oxide MasksTechnology

Ken Fujita, Heiji Watanabe, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom , 1997, Tokyo, pp.61-64.　1997/01

Observation of SiO2/Si(111) Interfaces and SiO2 Thermal Decomposition Using Scanning Reflection Electron Microscopy and Scanning Tunneling Microscopy

Heiji Watanabe, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1997, Tokyo, pp.57-60.　1997/01

Vacancy Diffusion Kinetics on Si(111) and (001) Surfaces Studied by Scanning Reflection Electron Microscopy

Heiji Watanabe, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1997, Tokyo, pp.53-56.　1997/01

Selective Thermal Reaction of SiO2 Induced by Electron Beams and their Applications to Nanofabrication

Shinobu Fujita, Shigemitsu Maruno, Heiji Watanabe, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1997, Tokyo, pp.13-16.　1997/01

Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams

S. Fujita, S. Maruno, H. Watanabe, M. Ichikawa

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 15　No. 3　p. 1493-1498　1997　Research paper (scientific journal)

Anisotropic kinetics of vacancy diffusion and annihilation on Si(001) surfaces studied by scanning reflection electron microscopy

Heiji Watanabe, Masakazu Ichikawa

Physical Review B - Condensed Matter and Materials Physics　Vol. 55　No. 15　p. 9699-9705　1997　Research paper (scientific journal)

Microprobe RHEED/STM combined microscopy

M. Ichikawa, S. Maruno, S. Fujita, H. Watanabe, Y. Kusumi

Surface Review and Letters　Vol. 4　No. 3　p. 535-542　1997　Research paper (scientific journal)

A combined apparatus of scanning reflection electron microscope and scanning tunneling microscope

S. Maruno, H. Nakahara, S. Fujita, H. Watanabe, Y. Kusumi, M. Ichikawa

Review of Scientific Instruments　Vol. 68　No. 1　p. 116-119　1997　Research paper (scientific journal)

Microstructure fabrication using oxidation on partially Ga-terminated Si(111) surfaces

S. Maruno, S. Fujita, H. Watanabe, M. Ichikawa

Applied Physics Letters　Vol. 69　No. 10　p. 1382-1384　1996/09/02　Research paper (scientific journal)

Oxidation of Patially Ga-Terminated Si(111) Surface

Shigemitsu Maruno, Shinobu Fujita, Heiji Watanabe, Masakazu Ichikawa

European Conference on Surface Science, 1996, Genova.　1996/09

Nanostructure fabrication using the selective thermal desorption of SiO2 induced by electron beams

S. Fujita, S. Maruno, H. Watanabe, M. Ichikawa

Applied Physics Letters　Vol. 69　No. 5　p. 638-640　1996/07/29　Research paper (scientific journal)

Self-Organized Ge Clustering on Partially Ga-Terminated Si(111)

Shigemitsu Maruno, Shinobu Fujita, Heiji Watanabe, Masakazu Ichikawa

American Physical Society March Meeting, 1996, St. Lous.　1996/03

Scanning Reflection Electron Microscopy Study of an Initial Stage of Layer-by-Layer Sputtering of Si(111) Surface

Heiji Watanabe, Masakazu Ichikawa

American Physical Society March Meeting, 1996, St. Lous.　1996/03

Development of Ultra-Fine Structure Etching Apparatus and its Application to Layer-by-Layer Sputtering of the Si(111) Surface

Heiji Watanabe, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1996, Tokyo, pp.293-296.　1996/02

Selective Thermal-Desorption of SiO2/Si Induced by Electron Beams

Shinobu Fujita, Shigemitsu Maruno, Heiji Watanabe, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1996, Tokyo, pp.289-292.　1996/02

Fabrication of periodical nanostructures using electron interference fringes

S. Fujita, S. Maruno, H. Watanabe, Y. Kusumi, M. Ichikawa

Microelectronic Engineering　Vol. 30　No. 1-4　p. 435-438　1996　Research paper (scientific journal)

Development of a multifunctional surface analysis system based on a nanometer scale scanning electron beam: Combination of ultrahigh vacuum-scanning electron microscopy, scanning reflection electron microscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopy

Heiji Watanabe, Masakazu Ichikawa

Review of Scientific Instruments　Vol. 67　No. 12　p. 4185-4190　1996　Research paper (scientific journal)

Kinetics of vacancy diffusion on Si(111) surfaces studied by scanning reflection electron microscopy

Heiji Watanabe, Masakazu Ichikawa

Physical Review B - Condensed Matter and Materials Physics　Vol. 54　No. 8　p. 5574-5580　1996　Research paper (scientific journal)

Initial stage of layer-by-layer sputtering of Si(111) surfaces studied by scanning reflection electron microscopy

Heiji Watanabe, Masakazu Ichikawa

Applied Physics Letters　Vol. 68　No. 18　p. 2514-2516　1996　Research paper (scientific journal)

Surfactant-mediated epitaxy of Ge on partially Ga-terminated Si(111) surfaces

S. Maruno, S. Fujita, H. Watanabe, Y. Kusumi, M. Ichikawa

Applied Physics Letters　Vol. 68　No. 16　p. 2213-2215　1996　Research paper (scientific journal)

Sub-10-nm Lithography and Development Properties of Inorganic Resist by Scanning Electron Beams

Jun-ichi Fujita, Heiji Watanabe, Yukinori Ochiai, Shoko Manako, Jaw-Shen Tsai, Shinji Matsui

J. Vac. Sci. Technol. B13 (1995) 2757-2761.　1995/11　Research paper (scientific journal)

Fabrication of Periodical Nanostructures by Transferring Electron Interference Fringes

Shinobu Fujita, Shigemitsu Maruno, Heiji Watanabe, Yukihiro Kusumi, Masakazu Ichikawa

Abst. Int. Conf. Micro- and Nano-Engineering, 1995, France.　1995/09

Development Properties and Sub-10 nm Lithography by Scanning Electron Beam Using Inorganic Resist

Jun-ichi Fujita, Heiji Watanabe, Yukinori Ochiai, Shoko Manako, Jaw-Shen Tsai, Shinji Matsui

Abst. Int. Symposium on Electron, Ion and Photon Beams, 1995, Arizona, pp.153-154.　1995/05

Sub-10 nm Lithography and Development Properties of Inorganic Resist by Scanning Electron Beam

Jun-ichi Fujita, Heiji Watanabe, Yukinori Ochiai, Shoko Manako, Jaw-Shen Tsai, Shinji Matsui

Appl. Phys. Lett. 66 (1995) 3065-3067.　1995/05　Research paper (scientific journal)

Periodical Nanostructure Fabrication Using Electron Interference Fringes Produced by Scanning Interference Electron Microscope

Shinobu Fujita, Shigemitsu Maruno, Heiji Watanabe, Yukihiro Kusumi, Masakazu Ichikawa

Appl. Phys. Lett. 66 (1995) 2754-2756.　1995/05　Research paper (scientific journal)

Nanolithography Developed Through Electron Beam Induced Surface Reaction (INVITED)

S. Matsui, Y. Ochiai, M. Baba, H. Watanabe

Materials Research Society Spring Meeting, 1995, San Francisco.　1995/04

Self-Developing Properties of High Resolution LiF(AlF3) Inorganic Electron Beam Resist

Heiji Watanabe, Jun-ichi Fujita, Yukinori Ochiai, Shinji Matsui, Masakazu Ichikawa

Ext. Abst. JRCAT Int. Symposium on Atom Technology, 1995, Tokyo, pp.239-241.　1995/02

Self-developing properties of an inorganic electron beam resist and nanometer-scale patterning using a scanning electron beam

Heiji Watanabe, Jun-Ichi Fujita, Yukinori Ochiai, Shinji Matsui, Masakazu Ichikawa

Japanese Journal of Applied Physics　Vol. 34　No. 12　p. 6950-6955　1995　Research paper (scientific journal)

Electron-stimulated desorption and in situ scanning electron microscopy study on self-developing reaction of high-resolution inorganic electron beam resist

Heiji Watanabe, Jun-Ichi Fujita, Yukinori Ochiai, Shiniji Matsui, Masakazu Ichikawa

Japanese Journal of Applied Physics　Vol. 34　No. 7　p. L948-L950　1995　Research paper (scientific journal)

XPS and ESD Study on Cl2/GaAs(100) Surface

Heiji Watanabe, Shinji Matsui

Gordon Research Conferences; Excitation at Semiconductor Surfaces, 1994, Hawaii.　1994/10

Low-Damage Electron-Beam-Assisted Dry Etching of GaAs and AlGaAs Using Electron Cyclotron Resonance Plasma Electron Source

Heiji Watanabe, Shinji Matsui

J. Vac. Sci. Technol. B11 (1993) 2288-2293.　1993/12　Research paper (scientific journal)

Nanolithography Using Electron Beam Induced Surface Reaction

Shinji Matsui, Yukinori Ochiai, Masakazu Baba, Heiji Watanabe

NATO Workshop, 1993, Rome.　1993/06

Electron-Beam-Assisted ry Etching of GaAs Using Electron Cyclotron Resonance Plasma Electron Source (INVITED)

Heiji Watanabe, Shinji Matsui

Int. Conf. on Electron, Ion and Photon Beams and Nanotechnology, 1993, California.　1993/05

Visible Light Emission from Nanocrystalline Silicon-Oxide Phase of Porous Silicon

Yukinori Ochiai, T. Ichihashi, N. Ookubo, H. Ono, S. Matsui, M. Matsudate, Heiji Watanabe

American Physical Society March Meeting, 1993.　1993/03

Electron beam irradiation effects on cl2/gaas

Heiji Watanabe, Shinji Matsui

Japanese Journal of Applied Physics　Vol. 32　No. 12 S　p. 6158-6162　1993　Research paper (scientific journal)

Nanometer-scale direct carbon mask fabrication using electron-beam-assisted deposition

Yukinori Ochiai, Heiji Watanabe, Jun-Ichi Fujita, Masakazu Baba, Shoko Manako, Shinji Matsui

Japanese Journal of Applied Physics　Vol. 32　No. 12 S　p. 6147-6152　1993　Research paper (scientific journal)

Effects of electron-beam-assisted dry etching on optical and electrical properties

Heiji Watanabe, Yukinori Ochiai, Shinji Matsui

Applied Physics Letters　Vol. 63　No. 11　p. 1516-1518　1993　Research paper (scientific journal)

Electron-Beam-Assisted Dry Etching for GaAs Using Electron Cyclotron Resonance Plasma Electron Source

Heiji Watanabe, Shinji Matsui

Appl. Phys. Lett. 61 (1992) 3011-3013.　1992/12　Research paper (scientific journal)

Electron-Beam-Assisted Dry Etching of GaAs

Heiji Watanabe, Shinji Matsui

Proc. Int. Symposium on Intelligent Design and Synthesis of Electron Material Systems, 1992, Osaka, pp.173-174.　1992/11

Dry Etching Utilizing Showered Electron Beam Assisted Etching

Shinji Matsui, Heiji Watanabe

Microelectronic Engineering 17 (1992) 337-340.　1992/09　Research paper (scientific journal)

Electron Beam Assisted Dry Etching

Heiji Watanabe, Shinji Matsui

NEC Research & Development 33 (1992) 481-493.　1992/06　Research paper (scientific journal)

Electron Beam Assisted Dry Etching

Heiji Watanabe, Shinji Matsui

NEC Research & Development　1992/06　Research paper (scientific journal)

Low-Temperature Electron-Beam-Assisted Dry Etching for GaAs Using Electron-Stimulated Desorption

Heiji Watanabe, Shinji Matsui

Jpn. J. Appl. Phys. 31 (1992) L810-L812.　1992/06　Research paper (scientific journal)

THERMAL RELEASE OF HYDROGEN IN SPUTTERED A-SIC-H FILMS

Y SUZAKI, H WATANABE, Y SUITA, T SHIKAMA, K YOSHII, H KAWABE

JOURNAL OF THE JAPAN INSTITUTE OF METALS　Vol. 56　No. 9　p. 985-990　1992　Research paper (scientific journal)

Low-Temperature Electron-Beam-Assisted Dry Etching for GaAs Using Electron-Stimulated Desorption

Heiji Watanabe, Shinji Matsui

Tech. Digest Int. Workshop on Science and Technology for Surface Reaction Process, 1992, Tokyo, pp.125-126.　1992/01

Nanotechnology Developed Through Electron Beam Induced Surface Reaction

Shinji Matsui, Yukinori Ochiai, Masakazu Baba, Heiji Watanabe

Proc. Int. Workshop on Quantum Functional Devices, 1992, Nasu, pp.25-43.　1992/01

Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation

Yukinori Ochiai, Norio Ookubo, Heiji Watanabe, Shinji Matsui, Yasunori Mochizuki, Toshinari Ichihashi, Haruhiko Ono, Shigeru Kimura

Japanese Journal of Applied Physics　Vol. 31　No. 5　p. L560-L563　1992　Research paper (scientific journal)

Nanostructure Technology Developed Through Electron-Beam-Induced Surface Reaction

Shinji Matsui, Toshinari Ichihashi, Yukinori Ochiai, Masakazu Baba, Heiji Watanabe, Akihiro Sato

Abst. Int. Symposium on Science and Technology of Mesoscopic Structures, 1991, Nara, pp.26-27　1991/11

GaAs Dry Etching Using Electron Beam Induced Surface Reaction

Heiji Watanabe, Shinji Matsui

Jpn. J. Appl. Phys. 30 (1991) 3190-3194.　Vol. 5　No. 11　p. 223-227　1991/11　Research paper (scientific journal)

Dry Etching Utilizing Showered Electron Beam Assisted Etching

Shinji Matsui, Heiji Watanabe

Abst. Int. Conf. on Microlithography, 1991, Roma, B4.4.　1991/09

10-nm Resolution Nanolithography Using Newly Developed 50 kV Electron Beam Direct Writing System

Yukinori Ochiai, Masakazu Baba, Heiji Watanabe, Shinji Matsui

Digest Int. MicroProcess Conf., 1991, Chiba, pp.202-203.　1991/07

GaAs Dry Etching Using Electron Beam Induced Surface Reaction

Heiji Watanabe, Shinji Matsui

Digest Int. MicroProcess Conf., 1991, Chiba, pp.112-113.　Vol. 5　No. 11　p. 223-227　1991/07

Gaas dry etching using electron beam induced surface reaction

Heiji Watanabe, Shinji Matsui

Japanese Journal of Applied Physics　Vol. 30　No. 11S　p. 3190-3194　1991　Research paper (scientific journal)

Ten-nanometer resolution nanolithography using newly developed 50-kv electron beam direct writing system

Yukinori Ochiai, Masakazu Baba, Heiji Watanabe, Shinji Matsui

Japanese Journal of Applied Physics　Vol. 30　No. 11S　p. 3266-3271　1991　Research paper (scientific journal)

Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl2 gas

S. Matsui, H. Watanabe

Applied Physics Letters　Vol. 59　No. 18　p. 2284-2286　1991　Research paper (scientific journal)

Reverse dry etching using a high-selectivity carbon mask formed by electron beam deposition

Heiji Watanabe, Shinji Matsui

Japanese Journal of Applied Physics　Vol. 30　No. 9　p. L1598-L1600　1991　Research paper (scientific journal)