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Tatebayashi Jun
舘林　潤
Tatebayashi Jun
舘林　潤
Graduate School of Engineering　Division of Materials and Manufacturing Science，Associate Professor

keyword rare-earth-doped semiconductors，semiconductor optical devices，quantum confinement structure，nanowires

Research History 10

  1. 2022/04 - Present
    大阪大学 先導的学際研究機構　スピン学際研究部門　准教授（兼任）

  2. 2021/04 - Present
    Osaka University　Center for Quantum Information and Quantum Biology　Associate Professor

  3. 2019/03 - Present
    Osaka University Graduate School of Engineering Division of Materials and Manufacturing Science　Associate Professor

  4. 2017/03 - 2019/02
    Osaka University Graduate School of Engineering Division of Materials and Manufacturing Science　Associate Professor

  5. 2011/04 - 2017/03
    東京大学ナノ量子情報エレクトロニクス研究機構 特任助教

  6. 2010/04 - 2011/03
    独立行政法人物質・材料研究機構 ポスドク研究員

  7. 2008/02 - 2010/03
    米国カリフォルニア大学ロサンゼルス校研究員

  8. 2005/04 - 2008/01
    米国ニューメキシコ大学研究員

  9. 2004/04 - 2005/03
    東京大学生産技術研究所 産官学連携研究員

  10. 2003/04 - 2004/03
    東京大学生産技術研究所荒川研究室 日本学術振興会特別研究員

Education 3

  1. The University of Tokyo　Graduate School, Division of Engineering

    - 2003/03

  2. The University of Tokyo　Graduate School, Division of Engineering

    - 2000/03

  3. The University of Tokyo　Faculty of Engineering

    - 1998/03

Committee Memberships 18

  1. International Conference on Nano-photonics Nano-optoelectronics, and Quantum Technology　Organizing Committee, Secretary　Other

    2023/05 - Present

  2. International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials　Program Committee　Other

    2021/05 - Present

  3. 独立行政法人日本学術振興会　日本学術振興会R032産業イノベーションのための結晶成長委員会　Academic society

    2021/04 - Present

  4. IEEE International Photonic Conference　Program committee　Other

    2021/01 - Present

  5. Japanese Society of Applied Physics　Program Comittee　Academic society

    2017/03 - Present

  6. International Conference on Nanophotonics and Nanoelectronics　Organizing Committee, Secretary　Other

    2019/01 - 2024/04

  7. 14th International Conference on Nitride Semiconductors　Program Committee　Other

    2020/05 - 2023/11

  8. 日本学術振興会結晶成長の科学と技術第161委員会　委員　Academic society

    2019/12 - 2021/03

  9. The 9th Asia-Pacific Workshop on Widegap Semiconductors　Local Arrangement Committee　Other

    2018/10 - 2019/11

  10. 第48回結晶成長国内会議　現地実行委員　Other

    2019/04 - 2019/10

  11. SemiconNano 2019　Steering Committee, Chair　Other

    2019/01 - 2019/09

  12. 第42回結晶成長討論会　現地実行委員　Other

    2019/04 - 2019/08

  13. Compound Semiconductor Week 2019　Local Arrangement Committee, Vice Chair　Other

    2018/10 - 2019/05

  14. Electronic Materials Symposium　Steering Committee, Secretary　Other

    2017/03 - 2018/12

  15. The International Workshop on Nitride Semiconductors 2018　Steering Committee　Other

    2017/03 - 2018/11

  16. International Conference on Metalorganic Vapor Phase Epitaxy　Program and Local Arrangement Committee　Other

    2017/04 - 2018/07

  17. The 29th International Conference on Defects in Semiconductors　Organizing Committee, Secretary　Academic society

    2017/03 - 2017/07

  18. International Microprocesses and Nanotechnology Conference　Program Committee (Section Head from 2021-2022)　Other

    2020/04 -

Professional Memberships 4

  1. 日本金属学会

  2. 日本材料学会

  3. レーザー学会

  4. 応用物理学会

Research Areas 3

  1. Nanotechnology/Materials / Crystal engineering / Rare-earth-doped semiconductors

  2. Nanotechnology/Materials / Nanomaterials /

  3. Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Awards 6

  1. Best Paper Award

    Yasufumi Fujiwara, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi　The 28th International Display Workshops　2021/12

  2. Best Presentation Award of ISPlasma 2019/IC-PLANTS2019

    S. Ichikawa, J. Takatsu, R. Fuji, D. Timmerman, J. Tatebayashi and Y. Fujiwara　2019/03

  3. 第42回（2018年度）レーザー学会奨励賞

    舘林 潤　社団法人レーザー学会　2018/05

  4. 第39回（2017年度）応用物理学会 解説論文賞

    舘林潤, 荒川泰彦　応用物理学会　2017/09

  5. the 2004 International Conference on Solid State Devices and Materials Best Paper Awards

    S. Iwamoto, J. Tatebayashi, T. Fukuda, T. Nakaoka, S. Ishida, and Y. Arakawa　2004/09

  6. Photonic West Optoelectronics 2002 Best Paper Awards

    J. Tatebayashi, S. Ishida, T. Someya, Y. Arakawa　The international society for optics and photonics　2002/03

Papers 148

  1. Improved Laser Cooling Efficiencies of Rare-Earth-Doped Semiconductors Using a Photonic-Crystal Nanocavity

    Yuta Nakayama, Masayuki Ogawa, Jun Tatebayashi, Yukihiro Harada, Yasufumi Fujiwara, Takashi Kita

    Solids　Vol. 6　No. 3　p. 51-51　2025/09/05　Research paper (scientific journal)

    Publisher: MDPI AG

  2. Enhanced Extraction Efficiency of Erbium Luminescence in Erbium Oxygen Codoped Gallium Arsenide Using One-Dimensional Photonic Crystals

    Zhidong Fang, Hirotake Kajii, Masahiko Kondow, Yasufumi Fujiwara, Jun Tatebayashi

    MATERIALS TRANSACTIONS　Vol. 66　No. 6　p. 659-663　2025/06/01　Research paper (scientific journal)

    Publisher: Japan Institute of Metals

  3. Energy transfer up-conversion of Tm,Yb-codoped ZnO grown on ZnO nanowires by sputtering-assisted metalorganic chemical vapor deposition

    M. Ida, M. Tane, Y. Fujiwara, J. Tatebayashi

    Japanese Journal of Applied Physics　Vol. 64　No. 3　p. 03SP67-03SP67　2025/03/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  4. Circularly polarized cavity mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal

    S. Takahashi, Y. Kinuta, S. Ito, H. Onishi, K. Yamashita, J. Tatebayashi, S. Iwamoto, Y. Arakawa

    Applied Physics Letters　Vol. 126　No. 8　2025/02/24　Research paper (scientific journal)

    Publisher: AIP Publishing

  5. Demonstration of enhanced Er luminescence in nanobeam photonic crystal nanocavities based on Er,O-codoped GaAs

    Zhidong Fang, Hirotake KAJII, Masahiko KONDOW, Yasufumi FUJIWARA, Jun Tatebayashi

    Japanese Journal of Applied Physics　Vol. 64　2025/01/29　Research paper (scientific journal)

    Publisher: IOP Publishing

  6. An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN

    Takenori Iwaya, Shuhei Ichikawa, Volkmar Dierolf, Brandon Mitchell, Hayley Austin, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

    AIP Advances　Vol. 14　No. 2　2024/02/01　Research paper (scientific journal)

    Publisher: AIP Publishing

  7. Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-co-doped GaAs

    Zhidong Fang, Jun Tatebayashi, Ryohei Homi, Masayuki Ogawa, Hirotake Kajii, Masahiko Kondow, Kyoko Kitamura, Brandon Mitchell, Shuhei Ichikawa, Yasufumi Fujiwara

    Optics Continuum　Vol. 2　No. 10　p. 2178-2178　2023/10/03　Research paper (scientific journal)

    Publisher: Optica Publishing Group

  8. Formation and Optical Characteristics of GaN:Eu/GaN Nanowires for Applications in Light-Emitting Diodes

    Jun Tatebayashi, Takaya Otabara, Takuma Yoshimura, Raiki Hada, Ryo Yoshida, Shuhei Ichikawa, Yasufumi Fujiwara

    ECS Journal of Solid State Science and Technology　Vol. 12　p. 096003-096003　2023/09/06　Research paper (scientific journal)

    Publisher: The Electrochemical Society

  9. Electrically driven europium-doped GaN microdisk

    T. Taniguchi, D. Timmerman, S. Ichikawa, J. Tatebayashi, Y. Fujiwara

    Optics Letters　Vol. 48　No. 17　p. 4590-4590　2023/08/28　Research paper (scientific journal)

    Publisher: Optica Publishing Group

  10. Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al2O3/n-ZnO Heterostructures

    Jun Tatebayashi, Kazuto Nishimura, Shuhei Ichikawa, Shinya Yamada, Yoshikata Nakajima, Kazuhisa Sato, Kohei Hamaya, Yasufumi Fujiwara

    ECS Journal of Solid State Science and Technology　Vol. 12　No. 7　p. 076017-076017　2023/07/01　Research paper (scientific journal)

    Publisher: The Electrochemical Society

  11. 229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide

    Hiroto Honda, Soshi Umeda, Kanako Shojiki, Hideto Miyake, Shuhei Ichikawa, Jun Tatebayashi, Yasufumi Fujiwara, Kazunori Serita, Hironaru Murakami, Masayoshi Tonouchi, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

    Applied Physics Express　Vol. 16　No. 6　p. 062006-062006　2023/06/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  12. Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy

    T. Otabara, J. Tatebayashi, T. Yoshimura, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Japanese Journal of Applied Physics　Vol. 62　No. SG　p. SG1018-SG1018　2023/03/03　Research paper (scientific journal)

    Publisher: IOP Publishing

  13. Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing

    T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, Y. Fujiwara

    Applied Physics Letters　Vol. 122　No. 3　p. 032102-032102　2023/01/16　Research paper (scientific journal)

    Publisher: AIP Publishing

  14. Formation and Optical Characteristics of Tm,Yb-Codoped ZnO Nanowires Towards Improvement of Photovoltaic Conversion Efficiency Via Downconversion

    Jun TATEBAYASHI, Naoto NISHIYAMA, Dolf TIMMERMAN, Shuhei ICHIKAWA, Yasufumi FUJIWARA

    Journal of the Society of Materials Science, Japan　Vol. 71　No. 10　p. 811-818　2022/10/15　Research paper (scientific journal)

    Publisher: Society of Materials Science, Japan

  15. Improved Q-factors of III-nitride-based photonic crystal nanocavities by optical loss engineering

    Takenori Iwaya, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

    Optics Express　Vol. 30　No. 16　p. 28853-28864　2022/08/01　Research paper (scientific journal)

  16. Formation and optical characteristics of GaN:Eu/GaN core-shell nanowires grown by organometallic vapor phase epitaxy

    T. Otabara, J. Tatebayashi, S. Hasegawa, D. Timmerman, S. Ichikawa, M. Ichimiya, M. Ashida, Y. Fujiwara

    Japanese Journal of Applied Physics　Vol. 61　No. SD　2022/06　Research paper (scientific journal)

  17. Elucidation of the excitation mechanism of Tb ions doped in AlxGa1−xN grown by OMVPE toward a wavelength-stable green emitter

    R. Komai, S. Ichikawa, H. Hanzawa, J. Tatebayashi, Y. Fujiwara

    Journal of Applied Physics　Vol. 131　No. 7　p. 073102-073102　2022/02/21　Research paper (scientific journal)

    Publisher: AIP Publishing

  18. Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers

    Hayley J. Austin, Brandon Mitchell, Dolf Timmerman, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Volkmar Dierolf

    Journal of Applied Physics　Vol. 131　No. 4　p. 045701-045701　2022/01/31　Research paper (scientific journal)

    Publisher: AIP Publishing

  19. Eu-Doped GaN Red LEDs for Next-Generation Micro-LED Displays

    Yasufumi FUJIWARA, Shuhei ICHIKAWA, Dolf TIMMERMAN, Jun TATEBAYASHI

    NIHON GAZO GAKKAISHI (Journal of the Imaging Society of Japan)　Vol. 60　No. 6　p. 593-605　2021/12/10　Research paper (scientific journal)

  20. Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder

    Takenori Iwaya, Shuhei Ichikawa, Masato Murakami, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

    Applied Physics Express　Vol. 14　No. 12　p. 122002-122002　2021/12/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  21. Droop-free amplified red emission from Eu ions in GaN

    Atsushi Takeo, Shuhei Ichikawa, Shogo Maeda, Dolf Timmerman, Jun Tatebayashi, Yasufumi FUJIWARA

    Japanese Journal of Applied Physics　Vol. 60　No. 12　p. 120905-120905　2021/11/19　Research paper (scientific journal)

    Publisher: IOP Publishing

  22. Formation and optical characteristics of ZnO:Eu/ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition

    J. Tatebayashi, M. Mishina, N. Nishiyama, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Japanese Journal of Applied Physics　Vol. 60　No. SC　p. SCCE05-SCCE05　2021/06/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  23. Enhanced Red Emission of Eu,O-Codoped GaN Embedded in a Photonic Crystal Nanocavity with Hexagonal Air Holes

    Shuhei Ichikawa, Yutaka Sasaki, Takenori Iwaya, Masato Murakami, Masaaki Ashida, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

    Physical Review Applied　Vol. 15　No. 3　2021/03/30　Research paper (scientific journal)

    Publisher: American Physical Society (APS)

  24. Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut

    Shuhei Ichikawa, Keishi Shiomi, Takaya Morikawa, Dolf Timmerman, Yutaka Sasaki, Jun Tatebayashi, Yasufumi Fujiwara

    Applied Physics Express　Vol. 14　No. 3　p. 031008-031008　2021/03/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  25. Purcell-Effect-Enhanced Radiative Rate of Eu3+ Ions in GaN Microdisks

    D. Timmerman, Y. Matsude, Y. Sasaki, S. Ichikawa, J. Tatebayashi, Y. Fujiwara

    Physical Review Applied　Vol. 14　No. 6　2020/12/18　Research paper (scientific journal)

    Publisher: American Physical Society (APS)

  26. Enhanced Photoluminescence in High-Q Photonic Crystal Nanocavities with Er,O-Codoped GaAs

    Masayuki OGAWA, Jun TATEBAYASHI, Natsuki FUJIOKA, Ryoma HIGASHI, Shuhei ICHIKAWA, Masahiko KONDOW, Dolf TIMMERMAN, Yasufumi FUJIWARA

    Journal of the Society of Materials Science, Japan　Vol. 69　No. 11　p. 823-828　2020/11/15　Research paper (scientific journal)

    Publisher: Society of Materials Science, Japan

  27. Perspective of Semiconductor Technologies Contributed to the IoT Society

    Shuhei ICHIKAWA, Tomohiro INABA, Keishi SHIOMI, Jun TATEBAYASHI, Dolf TIMMERMAN, Yasufumi FUJIWARA

    Journal of the Society of Materials Science, Japan　Vol. 69　No. 10　p. 762-766　2020/10/15　Research paper (scientific journal)

    Publisher: Society of Materials Science, Japan

  28. Investigation on Suitable Structure for Laser Oscillation in Eu-doped GaN with Two-Dimensional Photonic Crystal Nanocavities

    Takenori IWAYA, Shuhei ICHIKAWA, Masato MURAKAMI, Jun TATEBAYASHI, Yasufumi FUJIWARA

    Journal of the Society of Materials Science, Japan　Vol. 69　No. 10　p. 721-726　2020/10/15　Research paper (scientific journal)

    Publisher: Society of Materials Science, Japan

  29. Evaluations of Selective Dry Etching of GaAs Core Layer having Embedded InAs Quantum Dots Using Optical Measurements towards Photonic Crystal Laser Fabrication

    Takumi Okunaga, Tatsuhiro Nozue, Yifan Xiong, Hirotake Kajii, Masato Morifuji, Jun Tatebayashi, Yasufumi Fujiwara, Tsutomu Nishihashi, Masahiko Kondow

    2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)　2020/09　Research paper (international conference proceedings)

    Publisher: IEEE

  30. Enhanced Eu luminescence in GaN: Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities

    Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara

    Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials　p. 71-72　2020/09　Research paper (international conference proceedings)

  31. Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs

    R. Higashi, M. Ogawa, J. Tatebayashi, N. Fujioka, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Journal of Applied Physics　Vol. 127　No. 23　2020/06　Research paper (scientific journal)

  32. Quantitative evaluation of enhanced Er luminescence in GaAs-based two-dimensional photonic crystal nanocavities

    M. Ogawa, J. Tatebayashi, N. Fujioka, R. Higashi, M. Fujita, S. Noda, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Applied Physics Letters　Vol. 116　No. 18　p. 181102-1-181102-5　2020/05　Research paper (scientific journal)

  33. Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN

    D. Timmerman, B. Mitchell, S. Ichikawa, J. Tatebayashi, M. Ashida, Y. Fujiwara

    Physical Review Applied　Vol. 13　2020/04　Research paper (scientific journal)

  34. Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength

    S. Ichikawa, N. Yoshioka, J. Tatebayashi, Y. Fujiwara

    Journal of Applied Physics　Vol. 127　No. 11　2020/03　Research paper (scientific journal)

  35. GaN:Eu-based resonant-cavity light emitting diodes with conductive AlInN/GaN distributed Bragg reflectors

    Tomohiro Inaba, Jun Tatebayashi, Keishi Shiomi, Takanori Kojima, Dolf Timmerman, Shuhei Ichikawa, Yasufumi Fujiwara

    ACS Applied Electronic Materials　Vol. 2　No. 3　2020/02　Research paper (scientific journal)

  36. Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in Ga N

    D. Timmerman, B. Mitchell, S. Ichikawa, J. Tatebayashi, M. Ashida, Y. Fujiwara

    Physical Review Applied　Vol. 13　No. 1　2020/01/24　Research paper (scientific journal)

  37. Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology

    B. Mitchell, D. Timmerman, W. Zhu, J. Y. Lin, H. X. Jiang, J. Poplawsky, R. Ishii, Y. Kawakami, V. Dierolf, J. Tatebayashi, S. Ichikawa, Y. Fujiwara

    Journal of Applied Physics　Vol. 127　No. 1　2020/01/07　Research paper (scientific journal)

  38. Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN

    S. Copelman, H. Austin, D. Timmerman, J. D. Poplawsky, M. Waite, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, V. Dierolf, B. Mitchell

    Proceedings of SPIE - The International Society for Optical Engineering　Vol. 11302　2020　Research paper (international conference proceedings)

  39. High brightness and RGB integration of eu-doped GaN-based red LEDs for ultrahigh-resolution micro-LED display

    Yasufumi Fujiwara, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi

    Digest of Technical Papers - SID International Symposium　Vol. 51　No. 1　p. 691-694　2020　Research paper (international conference proceedings)

  40. 16.3: Invited Paper: New development in Red Light‐emitting Diodes (LEDs) using Eu‐doped GaN for Monolithic Micro‐LED Displays

    Yasufumi FUJIWARA, Shuhei ICHIKAWA, Jun TATEBAYASHI

    SID Symposium Digest of Technical Papers　Vol. 50　No. S1　p. 167-167　2019/09　Research paper (international conference proceedings)

    Publisher: Wiley

  41. Localized-surface-plasmon-enhanced GaN: Eu-based red light-emitting diodes utilizing silver nanoparticles

    J Tatebayashi, T Yamada, T Inaba, D Timmerman, S Ichikawa, Y Fujiwara

    Applied Physics Express　Vol. 12　No. 9　2019/08　Research paper (scientific journal)

  42. Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of Eu3+ ions

    Ruoqiao Wei, Brandon Mitchell, Dolf Timmerman, Tom Gregorkiewicz, Wanxin Zhu, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Volkmar Dierolf

    Physical Review B　Vol. 100　No. 8　2019/08　Research paper (scientific journal)

  43. Enhanced luminescence efficiency of GaN: Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles

    J. Tatebayashi, T. Yamada, T. Inaba, S. Ichikawa, Y. Fujiwara

    Japanese Journal of Applied Physics　Vol. 58　No. SC　p. SCC09/1-SCC09/6　2019/05　Research paper (scientific journal)

  44. Color-tunablility in GaN LEDs Based on Atomic Emission Manipulation Under Current Injection

    B. Mitchell, R. Wei, J. Takatsu, D. Timmerman, T. Gregorkiewicz, W. Zhu, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, V. Dierolf

    ACS Photonics　Vol. 6　p. 1153-1161　2019/04　Research paper (scientific journal)

  45. Control of the energy transfer between Tm3+ and Yb3+ ions in ZnO nanowires for photovoltaic applications

    Jun Tatebayashi, Tokuhito Nakajima, Masao Mishina, Dolf Timmerman, Shuhei Ichikawa, Yasufumi Fujiwara

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)　2019　Research paper (international conference proceedings)

  46. Picosecond Time-Resolved Excitation Dynamics and Emission Manipulation of Eu3+ Ions Doped into GaN

    Brandon Mitchell, Ruoqiao Wei, Dolf Timmerman, Tom Gregorkiewicz, Shuhei Ichikawa, Jun Tatebayashi, Volkmar Dierolf, Yasufumi Fujiwara

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)　2019　Research paper (international conference proceedings)

  47. High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminated GaN(0001) surface

    Shinya Yamada, Yuki Goto, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Kohei Hamaya

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)　2019　Research paper (international conference proceedings)

  48. Formation and optical properties of Tm,Yb-codoped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition

    J. Tatebayashi, G. Yoshii, T. Nakajima, M. Mishina, Y. Fujiwara

    Journal of Crystal Growth　Vol. 503　p. 13-19　2018/09　Research paper (scientific journal)

    Publisher: Elsevier

  49. InGaAs/GaAs nanowire-quantum dot lasers embedded on flexible membranes

    J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    Vol. 11　No. 06　2018/06　Research paper (scientific journal)

  50. Quantitative study on energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy

    T. Inaba, T. Kojima, G. Yamashita, E. Matsubara, B. Mitchell, R. Miyagawa, O. Eryu, J. Tatebayashi, M. Ashida, Y. Fujiwara

    Journal of Applied Physics　Vol. 123　2018/05　Research paper (scientific journal)

    Publisher: American Institute of Physics

  51. Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

    J. Takatsu, R. Fuji, J. Tatebayashi, D. Timmerman, A. Lesage, T. Gregokiewicz, Y. Fujiwara

    Journal of Applied Physics　Vol. 123　2018/05　Research paper (scientific journal)

    Publisher: American Institute of Physics

  52. Control of the energy transfer between Tm3+ and Yb3+ ions in Tm,Yb-codoped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition

    J. Tatebayashi, G. Yoshii, T. Nakajima, H. Kamei, J. Takatsu, D. M. Lebrun, Y. Fujiwara

    Journal of Applied Physics　Vol. 123　No. 16　p. 161409-161409　2018/05　Research paper (scientific journal)

    Publisher: American Institute of Physics

  53. Recent progress in nanowire quantum-dot lasers

    Jun Tatebayashi, Yasuhiko Arakawa

    Proceedings of SPIE - The International Society for Optical Engineering　Vol. 10543　2018　Research paper (international conference proceedings)

    Publisher: SPIE

  54. Wavelength-stable and Narrow-band Red LED for monolithic micro-LED display

    Yasufumi Fujiwara, Tomohiro Inaba, Keishi Shiomi, Shuhei Ichikawa, Jun Tatebayashi

    Proceedings of the International Display Workshops　Vol. 1　p. 418-420　2018　Research paper (international conference proceedings)

  55. Circularly polarized vacuum field in three-dimensional chiral photonic crystals probed by quantum dot emission

    S. Takahashi, Y. Ota, T. Tajiri, J. Tatebayashi, S. Iwamoto, Y. Arakawa

    2017/11　Research paper (scientific journal)

  56. Circularly polarized vacuum field in three-dimensional chiral photonic crystals probed by quantum dot emission

    S. Takahashi, Y. Ota, T. Tajiri, J. Tatebayashi, S. Iwamoto, Y. Arakawa

    Phys. Rev. B　2017/11　Research paper (scientific journal)

  57. Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications

    J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa

    Journal of Crystal Growth　Vol. 468　p. 144-148　2016/12　Research paper (scientific journal)

  58. A Nanowire-Based Plasmonic Quantum Dot Laser

    Jinfa Ho, Jun Tatebayashi, Sylvain Sergent, Chee Fai Fong, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa

    Nano Letters　Vol. 16　No. 4　p. 2845-2850　2016/03/31　Research paper (scientific journal)

    Publisher: American Chemical Society (ACS)

  59. Demonstration of a Plasmonic Laser using Quantum Dot Gain Medium

    Jinfa Ho, Jun Tatebayashi, Sylvain Sergent, Chee Fai Fong, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)　2016　Research paper (international conference proceedings)

  60. Demonstration of a three-dimensional photonic crystal nanocavity in a 110-layered diamond structure

    T. Tajiri, S. Takahashi, Y. Ota, J. Tatebayashi, S. Iwamoto, Y. Arakawa

    Appl. Phys. Lett.　2015/08　Research paper (scientific journal)

  61. Room temperature lasing in a single nanowire with quantum dots

    J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa

    Nature Photonics　Vol. 9　p. 501-506　2015/07　Research paper (scientific journal)

    Publisher: Nature Publishing

  62. Circularly Polarized Light Emission of Quantum Dots at the Band Edge of Three-Dimensional Chiral Photonic Crystals

    Shun Takahashi, Takeyoshi Tajiri, Yasutomo Ota, Jun Tatebayashi, Satoshi Iwamoto, Yasuhiko Arakawa

    2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)　2015　Research paper (international conference proceedings)

  63. Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

    Jun Tatebayashi, Satoshi Kako, Jinfa Ho, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa

    2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)　2015　Research paper (international conference proceedings)

  64. Plate-Insertion Stacking Method for Three-Dimensional Photonic Crystal Fabrication

    T. Tajiri, S. Takahashi, J. Tatebayashi, S. Iwamoto, Y. Arakawa

    Proceedings of the 2015 International Conference on Solid State Devices and Materials (SSDM)　p. 572-573　2015　Research paper (international conference proceedings)

  65. Low-threshold near-infrared GaAs-AlGaAs core-shell nanowire plasmon laser

    J. Ho, J. Tatebayashi, S. Sergent, C. F. Fong, S. Iwamoto, Y. Arakawa

    ACS Photonics　2015/01　Research paper (scientific journal)

  66. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire by selective metalorganic chemical vapor deposition

    J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    Appl. Phys. Lett.　Vol. 105　p. 103104-1-103104-5　2014/09　Research paper (scientific journal)

  67. Circular dichroism in a three-dimensional semiconductor chiral photonic crystal

    S. Takahashi, T. Tajiri, Y. Ota, J. Tatebayashi, S. Iwamoto, Y. Arakawa

    Appl. Phys. Lett.　2014/08　Research paper (scientific journal)

  68. Giant optical rotation in a three-dimensional semiconductor chiral photonic crystal

    S. Takahashi, A. Tandaechanurat, R. Igusa, Y. Ota, J. Tatebayashi, S. Iwamoto, Y. Arakawa

    Opt. Express　2013/12　Research paper (scientific journal)

  69. Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition

    J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    Journal of Crystal Growth　2013/05　Research paper (scientific journal)

  70. Formation and optical properties of site-controlled InGaAs/GaAs quantum-dot-in-nanowires by selective metalorganic chemical vapor deposition

    J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    Jpn J. Appl. Phys.　Vol. 51　No. 11S　p. 11PE13-11PE13-4　2012/11　Research paper (scientific journal)

    Publisher: The Japan Society of Applied Physics

  71. Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters

    J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    Applied Physics Letters　Vol. 100　No. 26　p. 263101-263101　2012/06/25　Research paper (scientific journal)

    Publisher: AIP Publishing

  72. Formation of a single in(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources

    J. Tatebayashi, Y. Ota, D. Karunathillake, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    Materials Research Society Symposium Proceedings　Vol. 1439　p. 115-119　2012　Research paper (international conference proceedings)

  73. Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems

    K. Gradkowski, T. J. Ochalski, N. Pavarelli, H. Y. Liu, J. Tatebayashi, D. P. Williams, D. J. Mowbray, G. Huyet, D. L. Huffaker

    Phys. Rev. B　2012/01　Research paper (scientific journal)

  74. Self-catalyzed vapor-liquid-solid growth of InP/InAsP core-shell nanopillars

    V. Evoen, Z. Hailong, L. Gao, M. Pozuelo, B. L. Liang, J. Tatebayashi, S. Kodambaka, D. L. Huffaker, R. F. Hicks

    Journal of Crystal Growth　Vol. 314　p. 34-38　2011/01　Research paper (scientific journal)

  75. Lateral interdot carrier transfer in InAs quantum dot cluster grown on pyramidal GaAs surface

    B. L. Liang, P. S. Wong, N. Pavarelli, J. Tatebayashi, T. J. Ochalski, G. Huyet, D. L. Huffaker

    Nanotechnology　2010/12　Research paper (scientific journal)

  76. 1.52 μm photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers

    P. S. Wong, B. L. Liang, A. Lin, J. Tatebayashi, D. L. Huffaker

    Applied Physics Letters　Vol. 97　No. 14　p. 143111-143111　2010/10/04　Research paper (scientific journal)

    Publisher: AIP Publishing

  77. Visible Light Emission from Self-Catalyzed GaInP/GaP Core-Shell Double Heterostructure Nanowires on Silicon

    J. Tatebayashi, A. Lin, P. S. Wong, R. F. Hicks, D. L. Huffaker

    J. Appl. Phys.　Vol. 108　No. 3　2010/08　Research paper (scientific journal)

  78. Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes

    J. Tatebayashi, G. Mariani, A. Lin, R. F. Hicks, D. L. Huffaker

    Appl. Phys. Lett.　Vol. 96　No. 25　2010/06　Research paper (scientific journal)

  79. Controlled Formation and Dynamic Wulff Simulation of Equilibrium Crystal Shapes of GaAs Pyramidal Structures on Nanopatterned Substrates

    P. S. Wong, B. L. Liang, R. Molecke, J. Tatebayashi, D. L. Huffaker

    Crystal Growth & Design　2010/04　Research paper (scientific journal)

  80. Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates

    Rotter Thomas J., Tatebayashi Jun, Senanayake Pradeep, Balakrishnan Ganesh, Rattunde Marcel, Wagner Joachim, Hader Jörg, Moloney Jerome V., Koch Stephan W., Dawson L. Ralph, Huffaker Diana L.

    Applied Physics Express　Vol. 2　No. 11　p. 112102-112102-3　2009/11/25

    Publisher: The Japan Society of Applied Physics

  81. Continuous-wave lasing at room-temperature of 2-μm Sb-based optically-pumped VECSELs monolithically grown on GaAs substrates

    T. J. Rotter, J. Tatebayashi, P. Senanayake, G. Balakrishnan, M. Rattunde, J. Wagner, J. Hader, J. V. Moloney, S. W. Koch, L. R. Dawson, D. L. Huffaker

    Appl. Phys. Express.　2009/11　Research paper (scientific journal)

  82. GaSb/GaAs type-ІІ quantum dots grown by droplet epitaxy

    Baolai Liang, Andrew Lin, Nicola Pavarelli, Charles Reyner, Jun Tatebayashi, Kalyan Nunna, Jun He, Tomasz J. Ochalski, Guillaume Huyet, Diana L. Huffaker

    Nanotechnology　2009/10　Research paper (scientific journal)

  83. Complex emission dynamics of type-II GaSb/GaAs quantum dots

    Kamil Gradkowski, Nicola Pavarelli, Tomasz J. Ochalski, Jun Tatebayashi, Guillaume Huyet, Diana L. Huffaker

    Appl. Phys. Lett.　2009/08　Research paper (scientific journal)

  84. Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates

    J. Tatebayashi, A. Jallipalli, M. N. Kutty, S. H. Huang, K. Nunna, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

    IEEE Journal of Selected Topics in Quantum Electron.　2009/05　Research paper (scientific journal)

  85. Optical transition pathways in type-II Ga(As)Sb quantum dots

    K. Gradkowski, T. Ochalski, D. Williams, J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, E. O'Reilly, G. Huyet, L. R. Dawson, D. L. Huffaker

    J. of Luminescence　2009/05　Research paper (scientific journal)

  86. Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode

    IEEE Transaction on Nanotechnology　Vol. 8　No. 2　p. 269-274　2009/03　Research paper (scientific journal)

  87. Strain-compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices

    J. Tatebayashi, N. Nuntawong, P. S. Wong, Y. C. Xin, L. F. Lester, D. L. Huffaker

    J. Phys. D: Appl. Phys.　Vol. 42　No. 7　2009/03　Research paper (scientific journal)

  88. Coulomb effects in type-II Ga(As)Sb quantum dots

    K. Gradkowski, T. J. Ochalski, D. P. Williams, S. B. Healy, J. Tatebayashi, G. Balakrishnan, E. P. O'Reilly, G. Huyet, D. L. Huffaker

    Phys. Stat. Sol.　2009/02　Research paper (scientific journal)

  89. Fabrication and electroluminescence characteristics of broad-area LEDs based on patterned quantum dots by MOCVD

    P. S. Wong, B. L. Liang, J. Tatebayashi, N. Nuntawong, M. N. Kutty, D. L. Huffaker

    Nanotechnology　2009/01　Research paper (scientific journal)

  90. Device characteristics of GaInSb/AlGaSb quantum well lasers monolithically grown on GaAs substrates by using an interfacial misfit array

    J. Tatebayashi, A. Jallipalli, M. N. Kutty, S. H. Huang, T. J. Rotter, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

    J. Electronic Meterials　Vol. 37　2008/12　Research paper (scientific journal)

  91. Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure

    P. S. Wong, B. L. Liang, V. G. Dorogan, A. R. Albrecht, J. Tatebayashi, H. Xiang, N. Nuntawong, Yu. I. Mazur, G. J. Salamo, S. R. J. Brueck, D. L. Huffaker

    Nanotechnology　2008/10　Research paper (scientific journal)

  92. Electric field modulation of exciton recombination in InAs/GaAs quantum dots emitting at 1.3 μm

    T. Miyazawa, T. Nakaoka, T. Usuki, J. Tatebayashi, Y. Arakawa, S. Hirose, K. Takemoto, M. Takatsu, N. Yokoyama

    J. Appl. Phys.　2008/07　Research paper (scientific journal)

  93. Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

    J. Tatebayashi, B. L. Liang, R. B. Laghumavarapu, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

    Nanotechnology　Vol. 19　No. 29　2008/07　Research paper (scientific journal)

  94. Effects of accumulated strain on the surface and optical properties of stacked 1.3 μm InAs/GaAs quantum dot structures

    Tao Yang, Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa

    Physica E　2008/04　Research paper (scientific journal)

  95. Novel monolithic integration of III-Sb materials on Si substrates

    Diana L Huffaker, Ganesh Balakrishnan, Anitha Jallipalli, Maya Kutty, Shenghong Huang, Noppadon Nuntawong, Jun Tatebayashi, nd Larry R Dawson

    SPIE Newsroom　2008/01　Research paper (scientific journal)

  96. Room-temperature lasing at 1.82 μm of GaInSb/AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array

    J. Tatebayashi, A. Jallipalli, M. N. Kutty, S. H. Huang, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

    Appl. Phys. Lett.　Vol. 91　No. 14　p. 141102-1-141102-3　2007/12　Research paper (scientific journal)

  97. Optical properties of patterned InAs quantum dot ensembles grown on GaAs nano-pyramids

    B. L. Liang, P. S. Wong, N. Nuntawong, A. R. Albrecht, J. Tatebayashi, T. J. Rotter, G. Balakrishnan, D. L. Huffaker

    2007/11　Research paper (scientific journal)

  98. 1.54 μm GaSb/AlGaSb multi quantum well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit (IMF) arrays

    A. Jallipalli, M. N. Kutty, G. Balakrishnan, J. Tatebayashi, N. Nuntawong, L. R. Dawson, D. L. Huffaker, Z. Mi, P. Bhattacharya

    Electron. Lett.　2007/10　Research paper (scientific journal)

  99. Single Dot Spectroscopy of Site-Controlled InAs Quantum Dots Nucleated on GaAs Nano-Pyramids

    T. Tran, A. Muller, C. K. Shih, P. S. Wong, G. Balakrishnan, N. Nuntawong, J. Tatebayashi, D. L. Huffaker

    Appl. Phys. Lett.　2007/09　Research paper (scientific journal)

  100. Room-temperature operation of buffer-free GaSb/AlGaSb quantum-well diode lasers grown on a GaAs platform emitting at 1.65 μm

    M. Mehta, A. Jallipalli, J. Tatebayashi, M. N. Kutty, A. Albrecht, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

    IEEE Photonics Technol. Lett.　2007/09　Research paper (scientific journal)

  101. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, S. H. Huang, D. A. Bussian, H. Htoon, V. Klimov, L. R. Dawson, D. L. Huffaker

    Appl. Phys. Lett.　Vol. 90　No. 26　p. 261115-1-261115-3　2007/06　Research paper (scientific journal)

  102. Controlled InAs Quantum Dot Nucleation on Faceted Nano-patterned Pyramids

    P. S. Wong, G. Balakrishnan, N. Nuntawong, J. Tatebayashi, D. L. Huffaker

    Appl. Phys. Lett.　2007/04　Research paper (scientific journal)

  103. Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures

    N. Nuntawong, J. Tatebayashi, P. S. Wong, D. L. Huffaker

    Appl. Phys. Lett.　2007/04　Research paper (scientific journal)

  104. Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 µm

    Tao Yang, Jun Tatebayashi, Kanna Aoki, Masao Nishioka, Yasuhiko Arakawa

    Appl. Phys. Lett.　2007/03　Research paper (scientific journal)

  105. Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots

    J. Tatebayashi, A. Khoshakhlagh, S. H. Huang, L. R. Dawson, G. Balakrishnan, D. L. Huffaker

    Appl. Phys. Lett.　Vol. 89　No. 20　p. 203116-1-203116-3　2006/11　Research paper (scientific journal)

  106. III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs

    G. Balakrishnan, J. Tatebayashi, A. Khoshakhlagh, S. Huang, A. Jallipalli, L. R. Dawson, D. L. Huffaker

    Appl. Phys. Lett.　2006/10　Research paper (scientific journal)

  107. Improved surface morphology of stacked 1.3 µm InAs/GaAs quantum dot active regions by introducing annealing processes

    Tao Yang, Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa

    Appl. Phys. Lett.　2006/08　Research paper (scientific journal)

  108. Ground-state lasing of stacked InAs/GaAs quantum dots with GaP strain-compensation layers grown by metalorganic chemical vapor deposition

    J. Tatebayashi, N. Nuntawong, Y. C. Xin, P. S. Wong, S. H. Huang, C. P. Hains, L. F. Lester, D. L. Huffaker

    Appl. Phys. Lett.　Vol. 88　No. 22　p. 221107-1-221107-3　2006/05　Research paper (scientific journal)

  109. Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands

    Toshiyuki Miyazawa, Jun Tatebayashi, Shinichi Hirose, Toshihiro Nakaoka, Satomi Ishida, Satoshi Iwamoto, Kazuya Takemoto, Tatsuya Usuki, Naoki Yokoyama, Motomu Takatsu, Yasuhiko Arakawa

    Jpn. J. Appl. Phys.　Vol. 45　No. 4　p. 3621-3624　2006/04　Research paper (scientific journal)

    Publisher: INSTITUTE OF PURE AND APPLIED PHYSICS

  110. Lasing at 1.28 um of InAs/GaAs Quantum Dots with AlGaAs Cladding Layer Grown at Low Temperature by MOCVD

    J. Tatebayashi, M. Ishida, N. Hatori, H. Ebe, H. Sudo, A. Kuramata, M. Sugawara, Y. Arakawa

    IEEE Journal of Selected Topics in Quantum Electron　Vol. 11　No. 5　p. 1027-1034　2005/09　Research paper (scientific journal)

  111. A very narrow photoluminescence broadening (< 16 meV) from ∼ 1.5 μm self-assembled quantum dots at room temperature

    Tatsuya Fukuda, Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa

    AIP Conference Proceedings　Vol. 772　p. 655-656　2005/06/30　Research paper (international conference proceedings)

  112. Tuning of g-factor in self-assembled In(Ga)As quantum dots through strain engineering

    T. Nakaoka, T. Saito, J. Tatebayashi, S. Hirose, T. Usuki, N. Yokoyama, Y. Arakawa

    Phys. Rev. B　2005/05　Research paper (scientific journal)

  113. Observation of 1.55 µm Light Emission from InAs Quantum Dots in Photonic Crystal Microcavity

    Satoshi Iwamoto, Jun Tatebayashi, Tatsuya Fukuda, Toshihiro Nakaoka, Satomi Ishida, Yasuhiko Arakawa

    Japanese Journal of Applied Physics　Vol. 44　No. 4B　p. 2579-2583　2005/04/21　Research paper (scientific journal)

    Publisher: IOP Publishing

  114. InAs/AlAs quantum dots with InGaAs insertion layer: dependence of the indium composition and the thickness

    S.K. Park, J. Tatebayashi, T. Yang, J.S. Kim, E.K. Kim, Y. Arakawa

    Physica E: Low-dimensional Systems and Nanostructures　Vol. 26　No. 1-4　p. 138-142　2005/02　Research paper (scientific journal)

    Publisher: Elsevier BV

  115. Highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3μm by metalorganic chemical vapor deposition

    Tao Yang, Jun Tatebayashi, Shiro Tsukamoto, Yasuhiko Arakawa

    Physica E: Low-dimensional Systems and Nanostructures　Vol. 26　No. 1-4　p. 77-80　2005/02　Research paper (scientific journal)

    Publisher: Elsevier BV

  116. 1.28μm lasing from stacked InAs∕GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition

    Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Hiroji Ebe, Mitsuru Sugawara, Yasuhiko Arakawa, Hisao Sudo, Akito Kuramata

    Applied Physics Letters　Vol. 86　No. 5　p. 053107-053107　2005/01/31　Research paper (scientific journal)

    Publisher: AIP Publishing

  117. Formation of self-assembled InAs/GaAs quantum dots with an ultranarrow phtoluminecence linewidth of ∼11 meV by rapid thermal annealing

    Tao Yang, Jun Tatebayashi, Kanna Aoki, Masao Nishioka, Yasuhiko Arakawa

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials　Vol. 2005　p. 279-282　2005　Research paper (international conference proceedings)

  118. Electroluminescence from a single quantum dot at telecommunication wavelength

    T. Miyazawa, J. Tatebayashi, T. Nakaoka, S. Ishida, S. Iwamoto, M. Takatsu, Y. Arakawa, S. Hirose, K. Takemoto, T. Usuki, N. Yokoyama

    Quantum Electronics and Laser Science Conference (QELS)　Vol. 1　p. 323-325　2005　Research paper (international conference proceedings)

  119. Microdisk lasers - Quantum-dot lasing and bistability

    T. Baba, T. Ide, S. Ishii, A. Nakagawa, J. Tatebayashi, S. Iwamoto, T. Nakaoka, Y. Arakawa

    Progress in Biomedical Optics and Imaging - Proceedings of SPIE　Vol. 5738　p. 295-302　2005　Research paper (international conference proceedings)

  120. 1.55-μm light emission from InAs QDs embedded in a high-Q photonic crystal microcavity

    Satoshi Iwamoto, Jun Tatebayashi, Tatsuya Fukuda, T. Nakaoka, S. Ishida, Yasuhiko Arakawa

    Proceedings of SPIE - The International Society for Optical Engineering　Vol. 5733　p. 406-413　2005　Research paper (international conference proceedings)

  121. Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding

    Toshihide Ide, Toshihiko Baba, Jun Tatebayashi, Satoshi Iwamoto, Toshihiro Nakaoka, Yasuhiko Arakawa

    Optics Express　Vol. 13　No. 5　p. 1615-1615　2005　Research paper (scientific journal)

    Publisher: The Optical Society

  122. High density and high uniformity InAs/AlAs QDs by using insertion layer

    S. K. Park, J. Tatebayashi, Y. Arakawa, C. J. Park, H. Y. Cho

    Journal of the Korean Physics Society　Vol. 45　p. S669-S672　2004/12　Research paper (scientific journal)

  123. Size, shape, and strain dependence of the g factor in self-assembled In(Ga)As quantum dots

    T. Nakaoka, T. Saito, J. Tatebayashi, Y. Arakawa

    Phys. Rev. B　2004/12　Research paper (scientific journal)

  124. Significant improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs/GaAs by low-pressure metalorganic chemical vapor deposition

    T. Yang, S. Tsukamoto, J. Tatebayashi, M. Nishioka, Y. Arakawa

    Appl. Phys. Lett.　Vol. 85　p. 2753-2755　2004/10　Research paper (scientific journal)

  125. InAs∕GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots

    Jun Tatebayashi, Yasuhiko Arakawa, Nobuaki Hatori, Hiroji Ebe, Mitsuru Sugawara, Hisao Sudo, Akito Kuramata

    Applied Physics Letters　Vol. 85　No. 6　p. 1024-1026　2004/08/09　Research paper (scientific journal)

    Publisher: AIP Publishing

  126. Lasing characteristics of InAs quantum-dot microdisk from 3 K to room temperature

    Toshihide Ide, Toshihiko Baba, Jun Tatebayashi, Satoshi Iwamoto, Toshihiro Nakaoka, Yasuhiko Arakawa

    Appl. Phys. Lett.　Vol. 85　No. 8　p. 1326-1328　2004/08　Research paper (scientific journal)

  127. Carrier relaxation in closely stacked InAs quantum dots

    T. Nakaoka, J. Tatebayashi, Y. Arakawa, T. Saito

    Journal of Applied Physics　Vol. 96　No. 1　p. 150-154　2004/07　Research paper (scientific journal)

    Publisher: AIP Publishing

  128. Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots

    Se-Ki Park, Jun Tatebayashi, Yasuhiko Arakawa

    Jpn. J. Appl. Phys.　Vol. 43　No. 6B　p. 3828-3830　2004/06　Research paper (scientific journal)

  129. Enhanced Optical Porperties of High-Density (>10^11/cm2) InAs/AlAs Quantum Dots by Hydrogen Passivation

    Se-Ki Park, Jun Tatebayashi, Toshihiro Nakaoka, Tomohiko Sato, Young Ju Park, Yasuhiko Arakawa

    Jpn. J. Appl. Phys.　Vol. 43　No. 4B　p. 2118-2121　2004/04　Research paper (scientific journal)

    Publisher: INSTITUTE OF PURE AND APPLIED PHYSICS

  130. Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots

    Pachamuthu Jayavel, Hirokazu Tanaka, Takashi Kita, Osamu Wada, Hiroji Ebe, Mitsuru Sugawara, Jun Tatebayashi, Yasuhiko Arakawa, Yoshiaki Nakano, Tomoyuki Akiyama

    Jpn. J. Appl. Phys.　Vol. 43　No. 4B　p. 1978-1980　2004/04　Research paper (scientific journal)

    Publisher: INSTITUTE OF PURE AND APPLIED PHYSICS

  131. Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor depostion

    Tao Yang, Jun Tatebayashi, Shiro Tsukamoto, Masao Nishioka, Yasuhiko Arakawa

    Appl. Phys. Lett.　Vol. 84　No. 15　p. 2817-2819　2004/04　Research paper (scientific journal)

  132. Spectroscopy on single columns of vertically aligned InAs quantum dots

    T. Nakaoka, J. Tatebayashi, Y. Arakawa

    Physica E　Vol. 21　p. 409-413　2004/03　Research paper (scientific journal)

  133. Structural and optical properties of high-density (>10^11/cm2) InAs QDs with varying Al(Ga)As matrix layer thickness

    S. K. Park, J. Tatebayashi, Y. Arakawa

    Physica E　Vol. 21　p. 279-284　2004/03　Research paper (scientific journal)

  134. Numerical analysis of DFB lasing action in photonic crystals with quantum dots

    S. Iwamoto, J. Tatebayashi, S. Kako, S. Ishida, Y. Arakawa

    Physica E　Vol. 21　No. 2-4　p. 814-819　2004/03　Research paper (scientific journal)

  135. Formation of ultrahigh-density InAs/AlAs quantum dots by metalorganic chemical vapor deposition

    Se-Ki Park, Jun Tatebayashi, Yasuhiko Arakawa

    Applied Physics Letters　Vol. 84　No. 11　p. 1877-1879　2004/03　Research paper (scientific journal)

  136. Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots

    P. Jayavel, H. Tanaka, T. Kita, O. Wada, H. Ebe, M. Sugawara, J. Tatebayashi, Y. Arakawa, Y. Nakata, T. Akiyama

    Appl. Phys. Lett.　Vol. 84　No. 11　p. 1820-1822　2004/03　Research paper (scientific journal)

  137. 1.28 μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

    Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Hiroji Ebe, Hisao Sudou, Akito Kuramata, Mitsuru Sugawara, Yasuhiko Arakawa

    Conference Digest - IEEE International Semiconductor Laser Conference　p. 55-56　2004　Research paper (international conference proceedings)

  138. Controlling the uniformity of self-assembled InAs/GaAs quantum dots by a combined GaAs/InGaAs strained buffer layer

    T Yang, S Tsukamoto, J Tatebayashi, M Nishioka, Y Arakawa

    2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings　p. 81-84　2004　Research paper (international conference proceedings)

  139. Room-temperature lasing of self-assembled InAs/GaAs quantum dot grown by metalorganic chemical vapor deposition

    J. Tatebayashi, H. Kakuma, N. Hatori, M. Ishida, H. Ebe, H. Sudo, A. Kuramata, Y. Nakata, M. Sugawara, Y. Arakawa

    Electron. Lett.　Vol. 39　No. 15　p. 1130-1131　2003/07　Research paper (scientific journal)

  140. Optical Characteristics of Two-Dimensional Photonic Crystal Slab Nanocavities with Self-Assembled InAs Quantum Dots for 1.3 um light emission

    J. Tatebayashi, S. Iwamoto, S. Kako, S. Ishida, Y. Arakawa

    Jpn. J. Appl. Phys.　Vol. 42　No. 4B　p. 2391-2394　2003/04　Research paper (scientific journal)

    Publisher: INSTITUTE OF PURE AND APPLIED PHYSICS

  141. CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition

    J. Tatebayashi, H. Kakuma, N. Hatori, M. Ishida, H. Ebe, H. Sudo, A. Kuramata, Y. Nakata, M. Sugawara, Y. Arakawa

    Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest　Vol. 2　2003　Research paper (international conference proceedings)

    Publisher: Institute of Electrical and Electronics Engineers Inc.

  142. Enhanced PL of high density (≈ 4.7×101/cm2) InAs QDs by using graded interface of GaAs/AlAs/GaAs

    S. K. Park, J. Tatebayashi, Y. Arakawa

    Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest　Vol. 1　2003　Research paper (international conference proceedings)

    Publisher: Institute of Electrical and Electronics Engineers Inc.

  143. Wideband polarization insensitivity in quantum dot optical amplifier

    T. Kita, P. Jayavel, H. Tanaka, K. Kho, O. Wada, Y. Nakata, T. Akiyama, H. Ehe, M. Sugawara, J. Tatebayashi, Y. Arakawa

    OSA Trends in Optics and Photonics Series　Vol. 88　p. 534-535　2003　Research paper (international conference proceedings)

    Publisher: Optical Society of American (OSA)

  144. Room temperature lasing with low threshold current of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

    J. Tatebayashi, N. Hatori, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS　Vol. 1　p. 122-123　2003　Research paper (international conference proceedings)

  145. Luminescence in excess of 1.5 um at room-temperature of InAs quantum dots capped by a thin InGaAs strain-reducing layer

    J. Tatebayashi, M. Nishioka, Y. Arakawa

    Journal of Crystal Growth　Vol. 237-239　No. 2　p. 1296-1300　2002/04　Research paper (scientific journal)

  146. Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

    Jun Tatebayashi, Masao Nishioka, Yasuhiko Arakawa

    Applied Physics Letters　Vol. 78　No. 22　p. 3469-3471　2001/05/28　Research paper (scientific journal)

    Publisher: AIP Publishing

  147. Area-controlled growth of InAs quantum dots and improvement of density and size distribution

    Jun Tatebayashi, Masao Nishioka, Takao Someya, Yasuhiko Arakawa

    Applied Physics Letters　Vol. 77　No. 21　p. 3382-3384　2000/11/20　Research paper (scientific journal)

    Publisher: AIP Publishing

  148. Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD

    Jun Tatebayashi, Satomi Ishida, Masao Nishioka, Takao Someya, Yasuhiko Arakawa

    Japanese Journal of Applied Physics　Vol. 39　No. Part 1, No. 4B　p. 2344-2346　2000/04/30　Research paper (scientific journal)

    Publisher: IOP Publishing

Misc. 16

  1. Spin transport in GaN using ferromagnetic Heusler alloy/n+-GaN Schottky tunnel contacts

    加藤昌稔, 山田晋也, 山田晋也, 市川修平, 小林周平, 山田道洋, 山田道洋, 内藤貴大, 舘林潤, 藤原康文, 藤原康文, 浜屋宏平, 浜屋宏平

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　Vol. 69th　2022

  2. Frontiers of Nitride Semiconductor Research FOREWORD

    Shigefusa F. Chichibu, Yoshinao Kumagai, Kazunobu Kojima, Momoko Deura, Toru Akiyama, Munetaka Arita, Hiroshi Fujioka, Yasufumi Fujiwara, Naoki Hara, Tamotsu Hashizume, Hideki Hirayama, Mark Holmes, Yoshio Honda, Masataka Imura, Ryota Ishii, Yoshihiro Ishitani, Motoaki Iwaya, Satoshi Kamiyama, Yoshihiro Kangawa, Ryuji Katayama, Yoichi Kawakami, Takahiro Kawamura, Atsushi Kobayashi, Masaaki Kuzuhara, Koh Matsumoto, Yusuke Mori, Takashi Mukai, Hisashi Murakami, Hideaki Murotani, Satoshi Nakazawa, Narihito Okada, Yoshiki Saito, Akira Sakai, Hiroto Sekiguchi, Koji Shiozaki, Kanako Shojiki, Jun Suda, Tetsuya Takeuchi, Tomoyuki Tanikawa, Jun Tatebayashi, Shigetaka Tomiya, Yoichi Yamada

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 58　2019/06　Other

  3. GaN(0001)上へのハーフメタルホイスラー合金Co2FeSi薄膜の低温MBE成長

    山田晋也, 山田晋也, 本多遼成, 後藤優貴, 市川修平, 舘林潤, 藤原康文, 藤原康文, 浜屋宏平, 浜屋宏平

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　Vol. 80th　2019

  4. Realization of red resonant cavity LEDs with an Eu-doped GaN active layer

    Vol. 117　No. 332　p. 45-48　2017/11/30

    Publisher: 電子情報通信学会

  5. Lasing in a Single Nanowire with Quantum Dots Operating at Room Temperature

    Vol. 44　No. 8　p. 502-507　2016/08

    Publisher: レーザー学会

  6. Advances in nanowire-based quantum dot lasers

    Vol. 85　No. 7　p. 568-574　2016/07

    Publisher: 応用物理学会

  7. ナノワイヤ量子ドットレーザー : ナノレーザーの高性能化に向けて

    舘林 潤, 荒川 泰彦

    光アライアンス　Vol. 27　No. 5　p. 29-33　2016/05

    Publisher: 日本工業出版

  8. Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands

    MIYAZAWA Toshiyuki, TATEBAYASHI Jun, NAKAOKA Toshihiro, TAKATSU Motomu, ISHIDA Satomi, IWAMOTO Satoshi, TAKEMOTO Kazuya, HIROSE Shinichi, USUKI Tatsuya, YOKOYAMA Naoki, ARAKAWA Yasuhiko

    Vol. 2005　p. 404-405　2005/09/13

  9. Sbを用いたMOCVD法自己形成InAs/GaAs量子ドットの高密度化・長波長化に関する検討

    館林潤, GUIMARD Denis, YANG T., 塚本史郎, 西岡政雄, 荒川泰彦

    応用物理学関係連合講演会講演予稿集　Vol. 52nd　No. 1　2005

  10. Room Temperature Lasing Characteristics in InAs Quantum-Dot Microdisk

    IDE Toshihide, BABA Toshihiko, TATEBAYASHI Jun, IWAMOTO Satoshi, NAKAOKA Toshihiro, ARAKAWA Yasuhiko

    Technical report of IEICE. LQE　Vol. 104　No. 484　p. 11-14　2004/12/03

    Publisher: The Institute of Electronics, Information and Communication Engineers

  11. 1.3-μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by MOCVD

    TATEBAYASHI Jun, HATORI Nobuaki, ISHIDA Mitsuru, EBE Hiroji, SUDOU Hisao, KURAMATA Akito, SUGAWARA Mitsuru, ARAKAWA Yasuhiko

    Technical report of IEICE. LQE　Vol. 104　No. 484　p. 45-50　2004/12/03

    Publisher: The Institute of Electronics, Information and Communication Engineers

  12. Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier

    JAYAVEL P., KITA T., WADA O., EBE H., SUGAWARA M., TATEBAYASHI J., ARAKAWA Y., NAKATA Y., AKIYAMA T.

    Vol. 2004　p. 560-561　2004/09/15

  13. Observation of Light Emission at-1.5μm from InAs Quantum Dots in Photonic Crystal Microcavity

    IWAMOTO Satoshi, TATEBAYASHI Jun, FUKUDA Tatsuya, NAKAOKA Toshihiro, ISHIDA Satomi, ARAKAWA Yasuhiko

    Vol. 2004　p. 918-919　2004/09/15

  14. InP(100)基板上のInAs量子ドットのアニール効果

    角田浩二, 館林潤, 西岡政雄, 塚本史郎, 荒川泰彦

    応用物理学会学術講演会講演予稿集　Vol. 65th　No. 1　2004

  15. 歪みバッファ層によるInAs量子ドットの高均一・高密度化

    楊涛, 館林潤, 塚本史郎, 西岡政雄, 荒川泰彦

    応用物理学会学術講演会講演予稿集　Vol. 64th　No. 1　2003

  16. Over 1.5μm light emission from InAs quantum dots embedded in InGaAs

    TATEBAYASHI J.

    Appl. Phys. Lett.　Vol. 77　p. 3382-3382　2000

Publications 3

  1. Engineering crystal habit : applications of polymorphism and microstexture learning from nature

    Ishikawa, Fumitaro, Ohfuji, Hiroaki, Kawano, Jun, Tohei, Tetsuya

    Springer,Array　2024

    ISBN: 9789819602650

  2. Silicon Photonics for Telecommunication and Biomedicine

    D. L. Huffaker, J. Tatebayashi

    CRC Press　2016/04　Scholarly book

  3. Nanowires: Fundamentals and Applications

    Yasuhiko Arakawa, Munetaka Arita, Jun Tatebayashi

    CMC Press　2013/03　Scholarly book

    ISBN: 9784781307602

Presentations 161

  1. Room-Temperature Simultaneous Luminescence at RGBY Four Colors in AlGaN:Tb/GaN Core-Shell Nanowires

    J. Tatebayashi, T. Yoshimura, K. Sato, S. Ichikawa, Y. Fujiwara

    Compound Semiconductor Week 2005 (CSW 2005), D1-5　2025/05/28

  2. Formation and optical characteristics of AlGaN:Tb/GaN core-shell nanowires grown by organometallic vapor phase epitaxy

    J. Tatebayashi, T. Yoshimura, K. Sato, S. Ichikawa, Y. Fujiwara

    International Conference on Nano-photonics Nano-optoelectronics, and Quantum Technology 2025　2025/04/22

  3. Optical characterization of energy transfer process in Tm,Yb-codoped ZnO nanowires

    M. Ida, J. Tatebayashi, S. Ichikawa, M. Tane, Y. Fujiwara

    37th International Microprocesses and Nanotechnology Conference　2024/11/13

  4. Red electroluminescence from Eu-doped ZnO in p-GaN/Al2O3/n-ZnO heterostructures

    K. Nishimura, J. Tatebayashi, S. Ichikawa, S. Yamada, Y. Nakajima, K. Sato, K. Hamaya, Y. Fujiwara

    International Conference on Nitride Semiconductors 14, MoP-GR-47　2023/11/13

  5. Monolithic integration of small blue and red LEDs for next-generation micro-LED displays with ultrahigh definition

    Toshihiro Ishihara, Shuhei Ichikawa, Genki Tanaka, Kazutsune Miyanaga, Tsuyoshi Uemura, Norio Kanzaki, Jun Tatebayashi, Yasufumi Fujiwara

    International Conference on Nitride Semiconductors 14, OD2-4　2023/11

  6. Growth of Eu-doped GaN nanowires towards realization of next-generation displays

    Jun Tatebayashi, Yasufumi Fujiwara

    2023/06/14

  7. Enhanced vertical light extraction in nanobeam photonic crystal nanocavities based on Er,O-codoped GaAs

    Zhidong Fang, Jun Tatebayashi, Hirotake Kajii, Sangmin Ji, Satoshi Iwamoto, Masahiko Kondow, Yasufumi Fujiwara

    International Conference on Nano-photonics and Nano-optoelectronics 2023　2023/04/20

  8. Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective metalorganic vapor phase epitaxy

    J. Tatebayashi, T. Otabara, T. Yoshimura, D. Timmerman, S. Ichikawa, Y. Fujiwara

    International Conference on Nano-photonics and Nano-optoelectronics 2023　2023/04/20

  9. III-Nitride-Based High-Q (>10000) Two-Dimensional Photonic Crystal Nanocavities in the Red Region

    T. Iwaya, S. Ichikawa, Dolf Timmerman, J. Tatebayashi, Y. Fujiwara

    International Conference on Nano-photonics and Nano-optoelectronics 2023　2023/04/19

  10. Exploration of rare earth nanophotonics

    Jun Tatebayashi, Yasufumi Fujiwara

    2022/11/25

  11. Influence of carrier diffusion length on quantum efficiency of red-emitting Eu-doped GaN micro-structures

    D. Timmerman, T. Ishihara, D. Denier, van, der Gon, S. Ichikawa, J. Tatebayashi, Y. Fujiwara

    10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022)　2022/11/15

  12. Eu-doped GaN-based red LEDs for micro-LED displays with extremely high resolution

    Y. Fujiwara, S. Ichikawa, D. Timmerman, J. Tatebayashi

    29th Workshop on Active-Matrix Flatpanel Display and Devices -TFT Technologies and FPD Materials (AM-FPD 22)　2022/07/05

  13. Eu-doped GaN-based red LEDs for next-generation micro-LED displays

    Y. Fujiwara, S. Ichikawa, D. Timmerman, J. Tatebayashi

    2022 International Conference on Electronics Packaging (ICEP 2022)　2022/05/11

  14. Demonstration of a GaN-Based High-Q (7900) H3 Photonic Crystal Cavity in the Red Region

    Takenori Iwaya, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

    International Conference on Nano-photonics and Nano-optoelectronics 2022　2022/04/18

  15. Room temperature red luminescence from GaN:Eu/GaN core-shell nanowires

    Takaya Otabara, Jun Tatebayashi, Dolf Timmerman, Shuhei Ichikawa, Masayoshi Ichimiya, Masaaki Ashida, Yasufumi Fujiwara

    International Conference on Nano-photonics and Nano-optoelectronics 2022　2022/04/18

  16. Formation and optical characteristics of GaN:Eu/GaN core-shell nanowires grown by organometallic vapor phase epitaxy

    T. Otabara, J. Tatebayashi, S. Hasegawa, S. Ichikawa, M. Ashida, Y. Fujiwara

    34th International Microprocesses and Nanotechnology Conference　2021/10/28

  17. “Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er,O-codoped GaAs

    Z. Fang, R. Homi, M. Ogawa, H. Kajii, M. Kondow, J. Tatebayashi, Y. Fujiwara

    31st International Conference on Defects in Semiconductors　2021/07/26

  18. Formation and optical characteristics of ZnO:Tm,Yb/ZnO nanowires towards photovoltaic applications

    J. Tatebayashi, T. Nakajima, N. Nishiyama, D. Timmerman, S. Ichikawa, Y. Fujiwara

    International Conference on Nano-photonics and Nano-optoelectronics 2021　2021/04/20

  19. 超スマート社会実現に資するナノワイヤフォトニクスの開拓

    舘林 潤, 市川 修平, 藤原 康文

    第68回応用物理学会春季学術講演会　2021/03

  20. Formation and optical characteristics of ZnO:Eu/ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition

    J. Tatebayashi, M. Mishina, N. Nishiyama, D. Timmerman, S. Ichikawa, Y. Fujiwara

    33rd International Microprocesses and Nanotechnology Conference (MNC 2020)　2020/11/10

  21. Enhanced Eu luminescence in GaN:Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities

    J. Tatebayashi, S. Ichikawa, Y. Fujiwara

    The 27th International Workshop on Active-Matrix Flatpanel Displays and Devices　2020/09/03

  22. Strongly enhanced red emission from Eu-doped GaN in a two-dimensional photonic-crystal nanocavity

    T. Iwaya, S. Ichikawa, M. Murakami, D. Timmerman, J. Tatebayashi, Y. Fujiwara

    2020 International Conference on Solid State Devices and Materials　2020/09

  23. Formation and optical characteristics of rare-earth-doped ZnO nanowires towards photovoltaic applications

    J. Tatebayashi

    16th Annual German-Japanese Colloquium　2019/12

  24. Observation of down-conversion behavior in ZnO:Tm,Yb/ZnO core-shell nanowires

    J. Tatebayashi, T. Nakajima, M. Mishina, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Asia-Pacific Workshop on Widegap Semiconductors 2019, GR1-3　2019/11/11

  25. Localized surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes with silver nanoparticles

    J. Tatebayashi, D. Timmerman, S. Ichikawa, Y. Fujiwara

    SemiconNano2019, O-15　2019/09/27

  26. Tm,Yb共添加ZnOナノワイヤ構造におけるダウンコンバージョン挙動の観測

    舘林 潤, 中島徳仁, 三品匡央, Dolf Timmerman, 市川修平, 藤原康文

    第80回応用物理学会秋季学術講演会　2019/09

  27. ナノ構造及び共振器導入によるEu添加窒化物半導体の高輝度化

    舘林 潤, Dolf Timmerman, 市川 修平, 藤原 康文

    第80回応用物理学会秋季学術講演会　2019/09

  28. Control of growth kinetics towards enhanced red emissions from strongly excited Eu-doped GaN

    S. Ichikawa, J. Tatebayashi, Y. Fujiwara

    13th International Conference on Nitride Semiconductors 2019 (ICNS-13), G09.03　2019/07

  29. “Enhancement of Eu luminescence in GaN:Eu via introduction of nanostructures and nanocavities

    J. Tatebayashi, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Asia Pacific Society for Materials Research, 202-19　2019/07

  30. Observation of strongly enhanced Er-related luminescence coupled with cavity modes in Er,O-codoped GaAs microdisks

    J. Tatebayashi, R. Higashi, M. Ogawa, D. Timmerman, S. Ichikawa, Y. Fujiwara

    International Conference on Defects in Semiconductors, ThP-18　2019/07

  31. High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminated GaN (0001) surface

    S. Yamada, Y. Goto, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, K. Hamaya

    Compound Semiconductor Week 2019 (CSW2019), TuP-A-5　2019/05

  32. Picosecond time-resolved excitation dynamics and emission manipulation of Eu3+ ions doped in GaN

    B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, S. Ichikawa, J. Tatebayashi, V. Dierolf, Y. Fujiwara

    Compound Semiconductor Week 2019 (CSW2019), TuP-G-11　2019/05

  33. Control of the energy transfer between Tm3+ and Yb3+ ions in ZnO nanowires for photovoltaic applications

    J. Tatebayashi, T. Nakajima, M. Mishina, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Compound Semiconductor Week 2019 (CSW2019), WeC2-5　2019/05

  34. Numerical analysis of luminescence enhancement in L3-type photonic crystal nanocavities with Er,O-codoped GaAs

    Masayuki Ogawa, Taiki Kishina, Ryoma Higashi, Masayuki Fujita, Susumu Noda, Jun Tatebayashi, Yasufumi Fujiwara

    International Conference on Nano-photonics and Nano-optoelectronics 2019, ICNN-4-05　2019/04

  35. Manipulation of Eu luminescence in GaN:Eu-based microdisks

    Y. Sasaki, T. Inaba, S. Ichikawa, J. Tatebayashi, Y. Fujiwara

    The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA’19), LEDIA-4-2　2019/04

  36. Excitation and relaxation processes of narrow-band blue emission in Tm-doped AlGaN revealed by time-resolved photoluminescence spectroscopy

    S. Ichikawa, J. Takatsu, R. Fuji, D. Timmerman, J. Tatebayashi, Y. Fujiwara

    12th International Conference on Plasma-Nano Technology & Science (ISPlasma 2019/IC-PLANTS2019), 19P3-35　2019/03

  37. ナノワイヤ量子ドットレーザーの室温動作

    舘林 潤, 荒川泰彦

    一般社団法人レーザー学会学術講演会第39回年次大会　2019/01

  38. Surface-plasmon-enhanced GaN:Eu-based light-emitting diodes utilizing silver nanoparticles

    J. Tatebayashi, T. Yamada, T. Inaba, Y. Matsude, S. Ichikawa, Y. Fujiwara

    International Workshop on Nitride Semiconductors (IWN2018), OD6-4　2018/11

  39. Novel in-situ technique for dislocation-reduction during GaN growth using multi-layered GaN:Eu structure

    S. Ichikawa, W. Zhu, B. Mitchell, T. Morikawa, J. Tatebayashi, T. Gregorkiewicz, Y. Fujiwara

    19th International Workshop on Nitride Semiconductors 2018 (IWN2018), GR8-2　2018/11

  40. Drastic surface-smoothing on vicinal (0001) GaN film via strong surfactant effect of doped-Eu

    S. Ichikawa, T. Morikawa, J. Tatebayashi, Y. Fujiwara

    19th International Workshop on Nitride Semiconductors 2018 (IWN2018), GR8-3　2018/11

  41. Fabrication of Two-Dimensional GaN:Eu Plasmonic Crystals toward Highly Efficient Red Emitters

    Yoji Matsude, Tomoya Yamada, Shuhei Ichikawa, Jun Tatebayashi, Yasufumi Fujiwara

    International Workshop on Nitride Semiconductors (IWN2018), CR4-1　2018/11

  42. 銀ナノ粒子を用いた表面プラズモン共鳴型GaN:Eu発光ダイオード

    舘林 潤, 山田智也, 稲葉智宏, 市川修平, 藤原康文

    第37回電子材料シンポジウム、We1-8　2018/10

  43. Fabrication and optical properties of GaN:Eu-based microdisks

    Y. Sasaki, T. Inaba, J. Tatebayashi, Y. Fujiwara

    the 12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON2018), O44　2018/07

  44. Growth of thick (~600 nm) Al0.82In0.18N by temperature-modulation epitaxy for realization of GaN-based photonic crystal slab nanocavities

    T. Inaba, J. Tatebayashi, Y. Fujiwara

    19th International Conference on Metalorganic Vapor Phase Epitaxy, P2-24　2018/06

  45. Formation and optical properties of Tm,Yb-codoped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition

    G. Yoshii, T. Nakajima, M. Mishina, J. Tatebayashi, Y. Fujiwara

    h International Conference on Metalorganic Vapor;Phase Epitaxy　2018/06

  46. Morphological and optical properties of Tm-doped AlGaN on GaN and AlN templates grown by organometallic vapor phase epitaxy

    J. Takatsu, R. Fuji, J. Tatebayashi, Y. Fujiwara

    19th International Conference on Metalorganic Vapor Phase Epitaxy, 7C-1.1　2018/06

  47. Observation of anomalous Er emission in a Er,O-codoped GaAs-based two dimensional photonic crystal nanocavity

    N. Fujioka, M. Ogawa, T. Kishina, R. Higashi, M. Kondow, J. Tatebayashi, Y. Fujiwara

    International Conference on Nano-photonics and Nano-optoelectronics 2018, 1CNN-2-1　2018/04

  48. Demonstration of red vertical microcavity LEDs with Eu-doped GaN as an active layer

    K. Shiomi, T. Inaba, J. Tatebayashi, Y. Fujiwara

    The 6th International Conference on Light-Emitting Devices and Their Industrial Applications, LEDIA8-3　2018/04

  49. Recent progress in nanowire-quantum dot laser

    J. Tatebayashi, Y. Arakawa

    SPIE Photonic West, 10543-2　2018/01

  50. フレキシブル基板に埋め込まれた InGaAs/GaAs 量子ドットを有する単一ナノワイヤのレーザ発振

    舘林 潤, 太田泰友, 石田悟己, 西岡政雄, 岩本 敏, 荒川泰彦

    第36回電子材料シンポジウム、We1-11　2017/10

  51. ナノワイヤ量子ドットレーザーの進展

    舘林 潤, 荒川泰彦

    2017年秋季 第78回 応用物理学会秋季学術講演会、6p-A405-1　2017/09

  52. Energy transfer processes in Eu-doped GaN by two-wavelength excited photoluminescence measurements

    J. Tatebayashi, H. Kogame, T. Kojima, Y. Fujiwara

    The 8th Asia-Pacific Workshop on Widegap Semiconductors, Qingdao, China　2017/09

  53. Nanowire-quantum dot lasers embedded in polydimethylsiloxane membranes for applications in flexible devices

    J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    The 24th Congress of the International Commission for Optics (ICO-24), Tu1J-03　2017/08

  54. Recent progress and future prospects of nanowire-based light emitters

    J. Tatebayashi, Y. Fujiwara, Y. Arakawa

    International Workshop on Advanced Smart Materials and Engineering for Nano- and Bio-Technologies　2017/07

  55. Nanowire-quantum dot lasers on flexible substrates

    J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    International Conference on Nano-photonics and Nano-optoelectronics 2017, ICNN6-2　2017/04

  56. フレキシブル基板上ナノワイヤ量子ドットレーザの実現

    舘林 潤, 太田泰友, 石田悟己, 西岡政雄, 岩本 敏, 荒川泰彦

    第64回応用物理学会春季学術講演会、15p-421-8　2017/03

  57. Lasing in a single nanowire with quantum dots

    J. Tatebayashi, Y. Arakawa

    SPIE Photonic West, 10114-4　2017/01

  58. Nanowire-quantum dot lasers grown on AlGaAs/GaAs distributed Bragg reflectors

    J. Tatebayashi, Y. Ota, S. Ishida, S. Iwamoto, Y. Arakawa

    The 6th International Symposium on Photonics and Electronics Convergence, P-41　2016/11

  59. DBR上ナノワイヤ量子ドットレーザにおける閾値特性の向上

    舘林 潤, 太田泰友, 岩本 敏, 荒川泰彦

    第77回応用物理学会秋季学術講演会、15p-B4-1　2016/09

  60. 半導体－空気周期ブラッグ反射膜を有するナノワイヤ共振器構造の検討

    舘林 潤, 岩本 敏, 荒川泰彦

    第77回応用物理学会秋季学術講演会、15p-B4-17　2016/09

  61. Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications

    J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa

    The 18th International Conference on Crystal Growth and Epitaxy, Mo1-G03-3　2016/08

  62. Demonstration of a Plasmonic Laser using Quantum Dot Gain Medium

    J. Ho, J. Tatebayashi, S. Sergen, C. F. Fong, S. Iwamoto, Y. Arakawa

    Compound Semiconductor Week 2016, TuB-3-3　2016/06

  63. 分布ブラッグ反射膜上に形成したInGaAs/GaAsナノワイヤ量子ドットレーザ

    舘林 潤, Jinfa Ho, 太田泰友, 加古 敏, 岩本 敏, 荒川泰彦

    第63回応用物理学会春季学術講演会、19p-W834-7　2016/03

  64. ナノワイヤ量子ドットレーザーの室温発振－高性能ナノレーザー実現に向けて－

    舘林 潤, 荒川泰彦

    一般社団法人レーザー学会学術講演会第36回年次大会、A-10pI-1　2016/01

  65. Room-temperature lasing in a single GaAs nanowire with InGaAs/GaAs quantum dots

    J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa

    The 5th International Symposium on Photonics and Electronics Convergence, P-19　2015/11

  66. Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

    J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa

    Conference on Lasers and Electro-Optics:2015, SM2F.1　2015/05

  67. InGaAs/GaAs量子ドットを有するナノワイヤレーザの室温発振

    舘林 潤, 加古 敏, Jinfa Ho, 太田泰友, 岩本 敏, 荒川泰彦

    第62回応用物理学会春季学術講演会、12a-A10-3　2015/03/12

  68. Lasing oscillation in a single GaAs nanowire cavity with multi-stacked InGaAs/GaAs quantum dots

    J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa

    The 4th International Symposium on Photonics and Electronics Convergence, P-61　2014/11

  69. InGaAs/GaAs 積層量子ドットを有するGaAs ナノワイヤ光共振器からのレーザ発振

    舘林 潤, 加古 敏, Jinfa Ho, 岩本 敏, 荒川泰彦

    第73回応用物理学会学術講演会、18a-A6-4　2014/09/18

  70. Lasing oscillation in multi-stacked InGaAs/GaAs quantum dots with a single GaAs nanowire cavity

    J. Tatebayashi, S. Kako, J. F. Ho, S. Iwamoto, Y. Arakawa

    the 46th International Conference on Solid State Devices and Materials 2014, P-6-2　2014/09

  71. Demonstration of GaAs based Nanowire Plasmonic Laser

    J. F. Ho, J. Tatebayashi, S. Sergen, C. F. Fong, S. Iwamoto, Y. Arakawa

    International Conference on Solid State Devices and Materials 2014　2014/09

  72. High-Q Three-Dimensional Photonic Crystal Nanocavity with a <110>-Layered Diamond Structure

    T. Tajiri, S. Takahashi, Y. Ota, J. Tatebayashi, S. Iwamoto, Y. Arakawa

    The 11th International Symposium on Photonic and Electromagnetic Crystal Structures　2014/05

  73. Circular Dichroism in a Three-Dimensional Semiconductor Chiral Photonic Crystal

    S. Takahashi, T. Tajiri, Y. Ota, J. Tatebayashi, S. Iwamoto, Y. Arakawa

    The 11th International Symposium on Photonic and Electromagnetic Crystal Structures, O-18　2014/05

  74. AlGaAs窓層導入によるInGaAs/GaAsナノワイヤ量子ドット太陽電池の変換効率改善

    舘林 潤, 田辺克明, 西岡政雄, 岩本 敏, 荒川泰彦

    第61回応用物理学会春季学術講演会，18p-F11-3　2014/03/18

  75. AlGaAs/GaAsコア・シェル構造導入による InGaAs/GaAsナノワイヤ量子ドットの発光特性改善

    舘林 潤, 西岡政雄, 荒川泰彦

    第74回応用物理学会学術講演会,18p-C11-9　2013/09/18

  76. Formation of highly-uniform multi-stacked InGaAs/GaAs quantum-dots-in-nanowires for photovoltaic applications

    J. Tatebayashi, Y. Ota, K. Tanabe, M. Nishioka, S. Iwamoto, Y. Arakawa

    International Symposium on Compound Semiconductors 2013, WeB1-1　2013/05

  77. 選択MOCVD法GaAsナノワイヤの軸・径方向成長ダイナミクス

    舘林 潤, 西岡政雄, 荒川泰彦

    第60回応用物理学会春季学術講演会, 28a-B8-2　2013/03/28

  78. InGaAs/GaAsナノワイヤ量子ドットを有する太陽電池の試作

    舘林 潤, 田辺克明, 岩本 敏, 荒川泰彦

    第60回応用物理学会春季学術講演会, 29a-G4-3　2013/03/29

  79. Growth of High Density InAs-Stacked Quantum Dots on Germanium-on-Insulator-on-Silicon Substrate Emitting at 1.3-μm for Silicon Photonics

    M. Rajesh, J. Tatebayashi, M. Nishioka, Y. Arakawa

    2nd International Symposium on Photonic and Electronics Convergence, P-31　2012/12

  80. 単一GaAsナノワイヤ中に埋め込まれた積層InGaAs量子ドットの均一性制御

    舘林 潤, 太田泰友, 石田悟己, 西岡政雄, 岩本 敏, 荒川泰彦

    第73回応用物理学会学術講演会, 12a-J-7　2012/09/12

  81. Site-controlled InAs/GaAs quantum-dot-in-nanowires for non-classical photon emitters

    J. Tatebayashi, Y. Ota, D. Karunathillake, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    7th International Conference on Quantum Dots (QD 2012), 10-3　2012/05

  82. Formation and optical properties of multi-stack InAs/GaAs quantum dots embedded in GaAs nanowires grown by selective metalorganic chemical vapor deposition

    J. Tatebayashi, D. Karunathillake, Y. Ota, S. Ishida, M. Nishioka, Y. Takayama, T. Ishida, H. Fujita, S. Iwamoto, Y. Arakawa

    16th International Conference on Metal Organic Vapor Phase Epitaxy, MoB3-2　2012/05

  83. High density InAs-stacked quantum dots emitting in the 1.3 μm band grown on germanium-on-insulator-on-silicon (GeOI) substrate

    M. Rajesh, J. Tatebayashi, M. Nishioka, S. Faure, Y. Arakawa

    16th International Conference on Metal Organic Vapor Phase Epitaxy, WeA1-1　2012/05

  84. Formation and optical properties of multi-stack InAs/GaAs quantum dots embedded in GaAs nanowires grown by selective metalorganic chemical vapor deposition

    J. Tatebayashi, D. Karunathillake, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    2012 Materials Research Society Spring Meeting, AA11.2　2012/04

  85. 高効率太陽電池実現に向けた高品質積層InGaAs/GaAsナノワイヤ量子ドットの形成と光学特性

    舘林 潤, Dumindu Karunathillake, 太田泰友, 石田悟己, 西岡政雄, 岩本 敏, 荒川泰彦

    第59回応用物理学会関係連合講演会, 16p-GP6-8　2012/03/16

  86. Formation and optical properties of single InGaAs quantum dots embedded in GaAs nanowires grown by selective metalorganic chemical vapor deposition

    J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa

    International Conference on Quantum Nanostructures and Nanoelectronics, Mo-10　2011/10

  87. GaAs ナノワイヤ中のInGaAs 量子ドットの形成と光学特性

    舘林 潤, Dumindu Karunathillake, 石田悟己, 西岡政雄, 荒川泰彦

    第72回応用物理学会学術講演会,31p-ZA-8　2011/08/31

  88. Influence of Coulomb interactions on emission dynamics in semiconductor quantum dot systems

    K. Gradkowski, T. J. Ochalski, N. Pavarelli, D. P. Williams, E. P. O’Reilly, J. Tatebayashi, B. L. Liang, D. L. Huffaker, D. J. Mowbray, G. Huye

    Photonic West 2011, 7937-05　2011/01

  89. Emission dynamics of GaInP/GaP core/shell NWs grown on Si substrate

    T. J. Ochalski, J. Tatebayashi, B. L. Liang, G. Huye, D. L. Huffaker

    Photonic West 2011, 7947-15　2011/01

  90. Ga液滴を用いた自己触媒化法によるSi基板上GaInP/GaPコア・シェル型ダブルヘテロ構造ナノワイヤの結晶成長及び光学・構造評価

    舘林 潤, 佐久間芳樹, 迫田和彰, Andrew Lin, Robert F. Hicks, Diana L. Huffaker

    第71回 応用物理学会学術講演会、15p-ZV-16　2010/09/15

  91. Visible light emission and carrier dynamics of GaP/GaInP core/shell nano-wires grown on silicon substrate

    N. Pavarelli, T. Ochalski, J. Tatebayashi, G. Huye, D. L. Huffaker

    30th International Conference on the Physics of Semiconductors, P1-145　2010/07

  92. Modelling of the Optical Matrix Element in Type-II Ga(As)Sb/GaAs Quantum Dots

    K. Gradkowski, T. J. Ochalski, D. P. Williams, E. P. O’Reilly, G. Huye, J. Tatebayashi, D. L. Huffaker

    Conference on Lasers and Electro Optics/ Quantum Electronics and Laser Science Conference　2009/05

  93. Energy transfer in patterned InAs quantum dot cluster grown on GaAs nano-pyramid

    B. L. Liang, P. S. Wong, J. Tatebayashi, D. L. Huffaker

    2009 International Conference on Indium Phosphide and Related Materials, 10.3　2009/05

  94. Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

    B. L. Liang, P. S. Wong, B. V., G. Dorogan, A. R. Albrech, H. Xiang, J. Tatebayashi, Yu. I. Mazur, G. J. Salamo, S. R. J. Brueck, D. L. Huffaker

    Photonic West 2009, 7224-08　2009/01

  95. Carrier-density effects in type-II GaSb/GaAs quantum dot lasers

    K. Gradkowski, T. J. Oschalski, E. P. O’Reilly, G. Huye, J. Tatebayashi, D. L. Huffaker

    Photonic West 2009, 7224-42　2009/01

  96. Growth of AlGaInSb Active Regions on GaAs/AlGaAs DBRs for High-Power 2 μm VECSELs

    Thomas Rotter, Ganesh Balakrishnan, Anitha Jallipalli, Jun Tatebayashi, L. R. Dawson, Diana Huffaker

    TMS 2008 Electronic Materials Conference (EMC), E9　2008/06

  97. Photoluminescence Comparison Analysis of Patterned and Self-Assembled Quantum Dots by MOCVD

    P. S. Wong, B. L. Liang, N. Nuntawong, J. Tatebayashi, D. L. Huffaker, V. Dorogan, Y. Mazur, G. J. Salamo

    Conference on Lasers and Electro Optics / International Quantum Electronics Conference, JTuA37　2008/05

  98. Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates

    J. Tatebayashi, A. Jallipalli, M. N. Kutty, S. H. Huang, N. Nuntawong, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

    Photonic West 2008, 6909-21　2008/01

  99. Optical transition pathways in type-II Ga(As)Sb quantum dots

    T. Ochalski, K. Gradkowski, D. Williams, E. O’Reilly, G. Huye, J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

    Photonic West 2008, 6902-17　2008/01

  100. Room-temperature lasing at 1.6 - 1.8 um of (In)GaSb/AlGaSb quantum well on GaAs substrates using interfacial misfit array

    J. Tatebayashi, G. Balakrishnan, A. Jallipalli, M. N. Kutty, M. Mehta, L. R. Dawson, D. L. Huffaker

    The North American Molecular Beam Epitaxy conference (NAMBE 2007), Abstract #6026　2007/09

  101. Type-II recombination pathways in Sb based quantum dots

    T. J. Ochalski, K. Gradkowski, G. Huye, A. Khoshakhlagh, J. Tatebayashi, A. Khoshakhlagh, D. L. Huffaker

    International Workshop on Long Wavelength Quantum Dots (LWQD)　2007/07

  102. 1.65- 1.82 um buffer-free Ga(In)Sb/AlGaSb quantum-well diode lasers grown on a GaAs substrate operating at room temperature

    M. Mehta, A. Jallipalli, M. N. Kutty, J. Tatebayashi, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

    TMS 2007 Device Research Conference (DRC), V.A-6　2007/06

  103. 1.54 um monolithically integrated GaSb quantum well laser diode on silicon operating at 77K

    G. Balakrishnan, A. Jallipalli, M. N. Kutty, J. Tatebayashi, S. H. Huang, L. R. Dawson, Z. Mi, P. Bhattacharya, D. L. Huffaker

    TMS 2007 Device Research Conference (DRC), V.B-8　2007/06

  104. Room-temperature lasing of type-II "W" GaSb/GaAs quantum dots embedded in InGaAs quantum well

    J. Tatebayashi, A. Khoshakhlagh, G. Balakrishnan, S. H. Huang, M. Mehta, L. R. Dawson, D. L. Huffaker

    TMS 2007 Device Research Conference (DRC), III-4　2007/06

  105. Controlled Growth of Quantum Dots and Nanopillars on Patterned GaAs Substrate by MOCVD

    P. S. Wong, G. Balakrishnan, N. Nuntawong, J. Tatebayashi, D. L. Huffaker

    TMS 2007 Electronic Materials Conference (EMC), I3　2007/06

  106. Fabrication and optical characteristics of type-II self-assembled GaSb quantum dots embedded in InGaAs quantum well

    A. Khoshakhlagh, J. Tatebayashi, S. H. Huang, R. B. Laghumavarapu, B. L. Liang, D. A. Bussian, H. Htoon, V. Klimov, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

    TMS 2007 Electronic Materials Conference (EMC), I7　2007/06/20

  107. Optical Properties of Stranski-Krastanov and Strain-Free GaSb Quantum Dots on GaAs Substrates - Towards Sb-based Type-II Quantum Dot Light Emitters -

    J. Tatebayashi, G. Balakrishnan, S. H. Huang, A. Khoshakhlagh, M. Mehta, L. R. Dawson, D. L. Huffaker

    The 6th IEEE Conference on Nanotechnology, Cincinnati, S8　2006/07

  108. Growth of High Quality Stranski-Krastanov GaSb Quantum Dots on a GaAs Substrate

    G. Balakrishnan, S. H. Huang, A. Khoshakhlagh, J. Tatebayashi, L. R. Dawson, D. L. Huffaker

    TMS 2006 Electronic Materials Conference (EMC)/Device Research Conference (DRC), G1　2006/06

  109. Low Threshold Current Operation of Stacked InAs/GaAs Quantum Dot Lasers with GaP Strain-Compensation Layers

    J. Tatebayashi, N. Nuntawong, Y. C. Xin, P. S. Wong, S. Huang, C. P. Hains, L. F. Lester, D. L. Huffaker

    The 2006 IEEE 18th International Conference on Indium Phosphide and Related Materials (IPRM), TuA1.1　2006/05

  110. Strain-compensation in closely-stacked quantum dot active regions grown by metal organic chemical vapor deposition

    N. Nuntawong, J. Tatebayashi, P. S. Wong, Y. C. Xin, C. P. Hains, S. Huang, L. F. Lester, D. L. Huffaker

    Proceedings of the International Society for Optical Engineering 2006, code number 6129-15　2006/01

  111. Electroluminescence from a single quantum dot at telecommunication wavelength

    T. Miyazawa, J. Tatebayashi, T. Nakaoka, S. Ishida, S. Iwamoto, M. Takatsu, Y. Arakawa, S. Hirose, K. Takemoto, T. Usuki, N. Yokoyama

    Conference on Lasers and Electro Optics/ Quantum Electronics and Laser Science Conference 2005, QTuH5　2005/05

  112. Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands

    T. Miyazawa, J. Tatebayashi, T. Nakaoka, M. Takatsu, S. Ishida, S. Iwamoto, S. Hirose, K. Takemoto, T. Usuki, N. Yokoyama, Y. Arakawa

    The 17th Indium Phosphide and Related Materials Conference　2005/05

  113. Improvement of the emission intensity of InAs/GaAs quantum dot over 1.5 μm by MOCVD

    T. Fukuda, J. Tatebayashi, M. Nishioka, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2005, P-1　2005/03

  114. Improving growth surface morphology of GaAs during stacking InAs/GaAs quantum dot layers for 1.3 μm laser devices by inserting annealing steps

    Tao Yang, J. Tatebayashi, M. Nishioka, Yasuhiko Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2005, P-2　2005/03

  115. Fabrication of self-assembled InAs/GaSb/GaAs quantum dots grown by metalorganic chemical vapor deposition

    D. Guimard, J. Tatebayashi, T. Yang, S. Tsukamoto, M. Nishioka, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2005, P-8　2005/03

  116. Effect of strain on tuning of g-factor in self-assembled In(Ga)As quantum dots

    T. Nakaoka, T. Saito, J. Tatebayashi, S. Hirose, T. Usuki, N. Yokoyama, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2005, P-29　2005/03

  117. Single InAs Quantum Dots LED with Self-Aligned SiO2 Lens Operating at Telecommunication Wavelengths

    T. Miyazawa, J. Tatebayashi, T. Nakaoka, M. Takatsu, S. Ishida, S. Iwamoto, K. Takemoto, S. Hirose, T. Usuki, N. Yokoyama, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2005, P-33　2005/03

  118. New Realization Method for Photonic Crystals of Rod-Connected Diamond Structures

    K. Aoki, S. Iwamoto, J. Tatebayashi, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2005, P-39　2005/03

  119. Fabrication of InAs Quantum-Dot Microdisk Injection Laser

    T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2005, P-45　2005/03

  120. Self-assembled InAs/GaAs quantum-dot lasers emitting at 1.3-μm grown by metalorganic chemical vapor deposition

    J. Tatebayashi, M. Ishida, N. Hatori, H. Ebe, H. Sudo, A. Kuramata, M. Sugawara, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2005, P-54　2005/03

  121. 1.55 μm light emission from InAs QDs embedded in a high-Q photonic crystal microcavity

    S. Iwamoto, J. Tatebayashi, T. Fukuda, T. Nakaoka, S. Ishida, Y. Arakawa

    Photonic West 2005, San Jose, USA, 57, 5733　2005/01

  122. MOCVD法によるGaAs基板上InAs量子ドットレーザの1.28μm室温連続発振

    館林 潤, 羽鳥伸明, 石田 充, 江部広治, 須藤久男, 倉又朗人, 菅原 充, 荒川泰彦

    電子情報通信学会 レーザ・量子エレクトロニクス研究会　2004/12

  123. A very narrow photoluminescence broadening (< 16 meV) from ~ 1.5 μm self-assembled InAs quantum dots at room temperature

    T. Fukuda, J. Tatebayashi, M. Nishioka, Y. Arakawa

    The 27th International Conference on the Physics of Semiconductors, J5.111　2004/11

  124. MOCVD法による高性能量子ドットレーザ実現に向けた自己形成InAs/GaAs量子ドットの結晶成長

    館林 潤, 羽鳥伸明, 江部広治, 須藤久男, 倉又朗人, 菅原 充, 荒川泰彦

    第65回応用物理学関係連合講演会 3p-V-2　2004/09/03

  125. 1.28 μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

    J. Tatebayashi, N. Hatori, M. Ishida, H. Ebe, H. Sudo, A. Kuramata, M. Sugawara, Y. Arakawa

    The 19th IEEE International Semiconductor Laser Conference, ThB-3　2004/09

  126. Observation of Light Emission at ~1.5 μm from InAs Quantum Dots in Photonic Crystal Microcavity

    S. Iwamoto, J. Tatebayashi, T. Fukuda, T. Nakaoka, S. Ishida, Y. Arakawa

    The 2004 International Conference on Solid State Devices and Materials, H-7-4　2004/09

  127. Controlling the uniformity of self-assembled InAs/GaAs quantum dots by a combined GaAs/InGaAs strained buffer layer

    T. Yang, S. Tsukamoto, J. Tatebayashi, M. Nishioka, Y. Arakawa

    The 16th International Conference on Indium Phosphide and Related Materials, TuB-2-4　2004/06

  128. Room temperature lasing in InAs quantum-dot microdisk laser

    T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, Y. Arakawa

    Conference on Lasers and Electro Optics / International Quantum Electronics Conference　2004/05

  129. InAs/AlAs Quantum Dots with InGaAs Insertion Layer: Dependence of the Indium Composition and the Thickness

    S. K. Park, J. Tatebayashi, Y. Arakawa

    Quantum Dots Conference 2004, WP13　2004/05

  130. A Narrow Photoluminescence Linewidth (< 17 meV) from Highly Uniform Self-Assembled InAs/GaAs Quantum Dots

    Tao Yang, Jun Tatebayashi, Shiro Tsukamoto, Yasuhiko Arakawa

    Quantum Dots Conference 2004, TP1　2004/05

  131. 高性能量子ドットレーザ実現に向けた基盤技術の開発

    館林 潤, 羽鳥伸明, 江部広治, 須藤久男, 倉又朗人, 菅原 充, 荒川泰彦

    第2回ナノテクノロジー総合シンポジウム（JAPAN NANO 2004）　2004/03

  132. MOCVD法による積層InAs/GaAs量子ドットレーザの長波長帯室温レーザ発振

    館林 潤, 羽鳥伸明, 江部広治, 須藤久男, 倉又朗人, 菅原 充, 荒川泰彦

    第51回応用物理学関係連合講演会 29a-ZE-6　2004/03/29

  133. Prospects of Semiconductor Nanostrcutures for Future Photonic Devices

    Y. Arakawa, S. Iwamoto, T. Nakaoka, S. Kako, J. Tatebayashi, M. Arita, T. Yukutake, M. Ito, T. Fukuda, T. Sato, M. Nishioka, S. Ishida

    International Symposium on Electronics for Future Generations　2004/03

  134. Long-wavelength lasing of InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition

    J. Tatebayashi, N. Hatori, H. Ebe, H. Sudo, A. Kuramata, M. Sugawara, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), P-27　2003/12

  135. CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition

    J. Tatebayashi, H. Kakuma, N. Hatori, M. Ishida, H. Ebe, H. Sudo, A. Kuramata, Y. Nakata, M. Sugawara, Y. Arakawa

    The fifth Pacific Rim Conference on Lasers and Electro-Optics, TH4B-(SS2)-2　2003/12

  136. Enhanced PL of High Density (up to 4.7 × 1011/cm2) InAs QDs by Using Graded Interface of GaAs/AlAs/GaAs

    S. K. Park, J. Tatebayashi, Y. Arakawa

    The fifth Pacific Rim Conference on Lasers and Electro-Optics, WP-(7)-8　2003/12

  137. Highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

    T. Yang, J. Tatebayashi, S. Tsukamoto, M. Nishioka, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), P-1　2003/11

  138. Improvement of Optical Properties of High Density InAs/AlAs QDs by Using Insertion Layer

    S. K. Park, J. Tatebayashi, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), P-5　2003/11

  139. Optical Polarization Control in Edge-Emitting InAs/GaAs Quantum Dots

    P. Jayavel, H. Tanaka, M. Uchigami, T. Kita, O. Wada, H. Ebe, M. Sugawara, J. Tatebayashi, Y. Arakawa, Y. Nakata, T. Akiyama

    International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), P-19　2003/11

  140. Non-resonant tunneling processes in vertically stacked InAs quantum dots

    T. Nakaoka, J. Tatebayashi, Y. Arakawa

    International Symposium on Quantum Dots and Photonic Crystals 2003 (QDPC2003), P-21　2003/11

  141. Room Temperature Lasing with Low Threshold Current of InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

    J. Tatebayashi, N. Hatori, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa

    The 16th Annual Meeting of the IEEE Lasers & Electro-Optics Society, ML5　2003/10

  142. Effects of InGaAs Insertion Layer on the Properties of High-Density InAs/AlAs Quantum Dots

    Se-Ki Park, Jun Tatebayashi, Yasuhiko Arakawa

    International Microprocesses and Nanotechnology Conference, 30P-7-35　2003/10

  143. MOCVD法によるGaAs基板上InAs量子ドットレーザ －活性層の積層条件依存性－

    館林 潤, 羽鳥伸明, 江部広治, 須藤久男, 倉又朗人, 菅原 充, 荒川泰彦

    第64回応用物理学関係連合講演会 1p-ZF-9　2003/09/01

  144. Enhanced Optical Properties of High Density (<1011/cm2) InAs/AlAs Quantum Dots by Using Hydrogen Passivation

    Se-Ki Park, J. Tatebayashi, Young Ju Park, Yasuhiko Arakawa

    2003 International Conference on Solid State Devices and Materials　2003/09

  145. Structual and Optical Properties of High Density (up to 4.7 × 1011/cm2) InAs QDs with Varying Al(Ga)As Matrix Layer Thickness

    S. K. Park, J. Tatebayashi, Y. Arakawa

    The eleventh international conference on modulated semiconductor structures, PA25　2003/07

  146. Numerical analysis of DFB lasing action in photonic crystals with quantum dots

    S. Iwamoto, J. Tatebayashi, S. Kako, S. Ishida, Y. Arakawa

    The eleventh international conference on modulated semiconductor structures　2003/07

  147. Spectroscopy on single columns of vertically aligned InAs quantum dots

    T. Nakaoka, J. Tatebayashi, Y. Arakawa

    The eleventh international conference on modulated semiconductor structures, PC28　2003/07

  148. MOCVD法により作製したGaAs基板上InAs量子ドットレーザの室温連続発振

    館林 潤, 鹿熊秀雄, 羽鳥伸明, 石田 充, 江部広治, 須藤久男, 倉又朗人, 中田義明, 菅原 充, 荒川泰彦

    第50回応用物理学関係連合講演会、28p-YF-5　2003/03/28

  149. Observation of Defect Modes of Two-Dimensional Photonic Crystal Slab with Self-Assembled InAs Quantum Dots

    J. Tatebayashi, S. Iwamoto, S. Kako, S. Ishida, Y. Arakawa

    2002 International Workshop on Photonic and Electromagnetic Crystal Structures, p. 95　2002/10

  150. 1.3 μm帯InAs量子ドットを有する２次元フォトニック結晶スラブにおける複数の欠陥モードの観測

    館林 潤, 岩本 敏, 加古 敏, 石田悟己, 荒川泰彦

    第63回応用物理学関係連合講演会 26p-YA-1　2002/09/26

  151. Optical Characteristics of Two-Dimensional Photonic Crystal Slab Nanocavities with Self-Assembled InAs Quantum Dots Emitting at Over 1.3-μm

    J. Tatebayashi, S. Iwamoto, S. Kako, S. Ishida, Y. Arakawa

    2002 International Conference on Solid State Devices and Materials　2002/09

  152. InAs量子ドットを活性層に持つ中空スラブ型２次元フォトニック結晶の作製・光学評価

    館林 潤, 加古 敏, 中岡俊裕, 石田悟己, 荒川泰彦

    第49回応用物理学関係連合講演会 28p-ZF-7　2002/03/28

  153. "Over-1.5-μm Luminescence at Room-Temperature of InAs Quantum Dots Capped by Thin InGaAs Strain-Reducing Layer

    J. Tatebayashi, M. Nishioka, Y. Arakawa

    The Thirteenth International Conference on Crystal Growth / The Eleventh International Conference on Vapor Growth and Epitaxy　2001/07

  154. Over-1.5-μm emissions at room temperature of InAs quantum dots in strained InGaAs quantum well

    J. Tatebayashi, M. Nishioka, Y. Arakawa

    Conference on Lasers and Electro Optics/ Quantum Electronics and Laser Science Conference　2001/05

  155. InGaAs歪量子井戸中に埋め込まれたInAs量子ドットの1.5 μm室温発光

    館林 潤, 西岡政雄, 荒川泰彦

    第48回応用物理学関係連合講演会30p-YD-4　2001/03/30

  156. Self-assembled growth of InAs quantum dots for 1.5-μm emissions

    J. Tatebayashi, M. Nishioka, T. Someya, Y. Arakawa

    The Fifth Symposium on Atomic-scale Surface and Interface Dynamics, pp. 17-19　2001/03

  157. Growth area control of InAs quantum dots for photonic crystal-based optical devices by selective MOCVD

    J. Tatebayashi, S. Ishida, T. Someya, Y. Arakawa

    The International Society for Optical Engineering, code number 4283-53　2001/01

  158. Control of Formation Area of Self-Assembled InAs Quantum Dots Using Selective MOCVD Growth

    J. Tatebayashi, M. Nishioka, T. Someya, Y. Arakawa

    The Fourth Symposium on Atomic-Scale Surface and Interface Dynamics, pp. 33-36　2000/03

  159. InAs量子ドットの形成領域制御－密度分布の改善－

    館林 潤, 石田悟己, 西岡政雄, 染谷隆夫, 荒川泰彦

    第60回応用物理学会学術講演会2p-D-9　1999/09/02

  160. Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD

    J. Tatebayashi, S. Ishida, M. Nishioka, T. Someya, Y. Arakawa

    1999 International Conference on Solid State Devices and Materials　1999/09

  161. MOCVD領域選択成長を用いたフォトニック結晶を有するInAs量子ドットレーザ構造の試作

    館林 潤, 石田悟己, 西岡政雄, 染谷隆夫, A. Larsson, 荒川泰彦

    第46回応用物理学関係連合講演会29p-ZL-18　1999/03/29

Industrial Property Rights 3

  1. 光電変換素子

    野澤 朋宏, 荒川 泰彦, 舘林 潤

    出願日:2013/04

  2. 超格子構造、前記超格子構造を備えた半導体装置および半導体発光装置、ならびに前記超格子構造の製造方法

    野澤 朋宏, 荒川 泰彦, 舘林 潤

    出願日:2012/03

  3. 半導体量子ドット素子及びその製造方法

    楊 涛, 館林 潤, 塚本 史郎, 荒川 泰彦

    出願日:2003/03

Academic Activities 11

  1. 14th International Conference on Nitride Semiconductors

    日本結晶成長学会

    2021/11 -

  2. 33rd International Microprocesses and Nanotechnology Conference

    応用物理学会

    2020/11 -

  3. International Conference on Nanophotonics and Nanoelectronics 2020

    OPTICS & PHOTONICS International Council

    2020/04 -

  4. Asia-Pacific Workshop on Widegap Semiconductors

    The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Japan Society for the Promotion of Science

    2019/11 -

  5. Compound Semiconductor Week 2019

    CSW2019 Committee

    2019/05 -

  6. International Conference on Nanophotonics and Nanoelectronics

    OPIC

    2019/04 -

  7. The International Workshop on Nitride Semiconductors 2018

    The Japanese Association for Crystal Growth

    2018/11 -

  8. 第37回電子材料シンポジウム

    電子材料シンポジウム実行委員会

    2018/10 -

  9. The 19th International Conference on Metalorganic Vapor Phase Epitaxy

    The Japanese Association for Crystal Growth

    2018/06 -

  10. The 36th Electronic Materials Symposium

    電子材料シンポジウム実行委員会

    2017/11 -

  11. The 29th International Conference on Defects in Semiconductors

    Japan Society of Applied Physics.

    2017/07 -