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Compact empirical tight-binding models for the conduction band of 4H-SiC considering the floating nature of electronic states
Sachika Nagamizo, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics 2025/08/01 Research paper (scientific journal)
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Acceleration theorem for low-dimensional electron systems with off-diagonal effective-mass components
Nobuya Mori, Hajime Tanaka, Jo Okada
Journal of Applied Physics 2025/06/28 Research paper (scientific journal)
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Acoustic Phonon Scattering in Free‐Standing Anisotropic Silicon Plates
Nobuya Mori
physica status solidi (b) 2024/12/23 Research paper (scientific journal)
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Effect of random potential on two-dimensional electronic states
Nobuya Mori
Japanese Journal of Applied Physics 2024/12/10 Research paper (scientific journal)
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Impact of interface structure on electronic states in 4H-SiC inversion layer
Sachika Nagamizo, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics 2024/12/04 Research paper (scientific journal)
Publisher: IOP Publishing
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Carrier transport simulations in twisted bilayer and turbostratic multilayer graphene systems
Seyed Ali Mojtahedzadeh, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics Vol. 63 No. 5 p. 05SP09-05SP09 2024/05/01 Research paper (scientific journal)
Publisher: IOP Publishing
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Modeling and Simulation of Carrier Transport Properties in 4H-SiC
Hajime Tanaka, Nobuya Mori
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) 2024/04/22 Research paper (international conference proceedings)
Publisher: IEEE
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Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC
Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori
Materials Science in Semiconductor Processing Vol. 173 p. 108126-108126 2024/04 Research paper (scientific journal)
Publisher: Elsevier BV
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Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure
Seyed Ali Mojtahedzadeh, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics Vol. 63 No. 3 p. 031004-031004 2024/03/01 Research paper (scientific journal)
Publisher: IOP Publishing
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Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness
Jin Hyong Lim, Nobuya Mori
Japanese Journal of Applied Physics 2024/02/29 Research paper (scientific journal)
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Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential
Yutoku Murakami, Sachika Nagamizo, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics 2024/01/23 Research paper (scientific journal)
Publisher: IOP Publishing
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Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface
Keisuke Utsumi, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics 2023/12/25 Research paper (scientific journal)
Publisher: IOP Publishing
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Wannier-Stark localization of electronic states in 4H-SiC MOS inversion layer
Sachika Nagamizo, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics 2023/12/25 Research paper (scientific journal)
Publisher: IOP Publishing
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Full-band Monte Carlo analysis of strain effects on carrier transport in GaN
Wataru Miyazaki, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics 2023/11/27 Research paper (scientific journal)
Publisher: IOP Publishing
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RSDFT-NEGF transport simulations in realistic nanoscale transistors
Gennady Mil’nikov, Jun-ichi Iwata, Nobuya Mori, Atsushi Oshiyama
Journal of Computational Electronics 2023/10 Research paper (scientific journal)
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Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness
Jo Okada, Hajime Tanaka, Nobuya Mori
Applied Physics Express Vol. 16 No. 9 p. 091003-091003 2023/09/01 Research paper (scientific journal)
Publisher: IOP Publishing
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Effects of hydrogen radical treatment on piezoresistance coefficients of germanium
Kazunori Matsuda, Masashi Yamamoto, Michio Mikawa, Shiro Nagaoka, Nobuya Mori, Kazuo Tsutsui
Applied Physics Express Vol. 16 No. 4 p. 041003-041003 2023/04/01 Research paper (scientific journal)
Publisher: IOP Publishing
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Tight-binding analysis of the effect of strain on the band structure of GaN
Wataru Miyazaki, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics Vol. 62 No. SC p. SC1076-SC1076 2023/02/24 Research paper (scientific journal)
Publisher: IOP Publishing
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Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased condition based on complex band structure
Yutoku Murakami, Sachika Nagamizo, Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics Vol. 62 No. SC p. SC1042-SC1042 2022/12/28 Research paper (scientific journal)
Publisher: IOP Publishing
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Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes
H. Tanaka, T. Kimoto, N. Mori
Journal of Applied Physics Vol. 131 No. 22 p. 225701-225701 2022/06/14 Research paper (scientific journal)
Publisher: AIP Publishing
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Electron and Phonon Transport Simulation for Quantum Hybrid System
Nobuya Mori, Gennady Mil’nikov
Quantum Science and Technology p. 73-98 2022/05 Part of collection (book)
Publisher: Springer Nature Singapore
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Analytical models for inter-layer tunneling in two-dimensional materials
Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka
Japanese Journal of Applied Physics 2021/12/02 Research paper (scientific journal)
Publisher: IOP Publishing
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Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel
Ryota Negishi, Katsuma Yamamoto, Hirofumi Tanaka, Seyed Ali Mojtahedzadeh, Nobuya Mori, Yoshihiro Kobayashi
Scientific Reports Vol. 11 No. 1 p. 10206-1-10206-11 2021/12 Research paper (scientific journal)
Publisher: Springer Science and Business Media LLC
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Invited: Monte Carlo Simulation of Electron Mobility in SiC MOSFETs
Hajime Tanaka, Nobuya Mori
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) 2021/11/17 Research paper (international conference proceedings)
Publisher: IEEE
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Analysis of Electronic States at SiC MOS Interface Based on Empirical Pseudopotential Method
Sachika Nagamizo, Hajime Tanaka, Nobuya Mori
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) p. 1-2 2021/11/17 Research paper (international conference proceedings)
Publisher: IEEE
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Equivalent model for band-to-band tunneling simulation of direct-gap III–V semiconductor nanowires
Jo Okada, Futo Hashimoto, Nobuya Mori
Japanese Journal of Applied Physics Vol. 60 No. 9 p. 091002-1-091002-6 2021/09/01 Research paper (scientific journal)
Publisher: IOP Publishing
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Comparison of linear and quadratic dispersion models for phonon transport in one-dimensional mass-disordered systems
N. Mori, A. Komada, G. Mil’nikov
APL Materials Vol. 9 No. 8 p. 081112-1-081112-7 2021/08/01 Research paper (scientific journal)
Publisher: AIP Publishing
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Comparative simulation study of intra-layer band-to-band tunneling in monolayer transition metal dichalcogenides
Futo Hashimoto, Nobuya Mori
Japanese Journal of Applied Physics Vol. 60 No. SB p. SBBH12-SBBH12 2021/02/03 Research paper (scientific journal)
Publisher: IOP Publishing
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Reduction of order of device Hamiltonian with adaptive moment estimation
Jo Okada, Futo Hashimoto, Nobuya Mori
Japanese Journal of Applied Physics Vol. 60 No. SB p. SBBH08-SBBH08 2021/01/15 Research paper (scientific journal)
Publisher: IOP Publishing
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Thermoelectric Si1−xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators
Tatsuhiko Taniguchi, Takafumi Ishibe, Ryoya Hosoda, Youya Wagatsuma, Md. Mahfuz Alam, Kentarou Sawano, Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, Nobuya Mori, Yoshiaki Nakamura
Applied Physics Letters Vol. 117 No. 14 p. 141602-141602 2020/10/05 Research paper (scientific journal)
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TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculation
Hidehiro Asai, Tatsuya Kuroda, Koich Fukuda, Junichi Hattori, Tsutomu Ikegami, Nobuya Mori
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD Vol. 2020-September p. 93-96 2020/09/23 Research paper (international conference proceedings)
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Analysis of Hall mobility in two-dimensional disordered systems
Hajime Tanaka, Nobuya Mori
Semiconductor Science and Technology Vol. 35 No. 9 p. 095015-095015 2020/09/01 Research paper (scientific journal)
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Material dependence of band-to-band tunneling in van der Waals heterojunctions of transition metal dichalcogenides
Foto Hashimoto, Hajime Tanaka, Nobuya Mori
Journal of Physics D: Applied Physics 2020/06/17 Research paper (scientific journal)
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Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors
Quanshan Lv, Faguang Yan, Nobuya Mori, Wenkai Zhu, Ce Hu, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Kaiyou Wang
Advanced Functional Materials Vol. 30 No. 15 p. 1910713-1910713 2020/04 Research paper (scientific journal)
Publisher: Wiley
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A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors
Yen Le Thi, Yoshinari Kamakura, Nobuya Mori
Japanese Journal of Applied Physics Vol. 59 No. 4 p. 044005-044005 2020/04/01 Research paper (scientific journal)
Publisher: IOP Publishing
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Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors
Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori
APPLIED PHYSICS EXPRESS Vol. 13 No. 4 2020/04 Research paper (scientific journal)
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Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs
Hajime Tanaka, Nobuya Mori
Japanese Journal of Applied Physics Vol. 59 No. 3 2020/03
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Methodology of Thermoelectric Power Factor Enhancement by Nanoscale Thermal Management in Bulk SiGe Composites
Shunya Sakane, Takafumi Ishibe, Masato Kashino, Kentaro Watanabe, Takeshi Fujita, Yoshinari Kamakura, Nobuya Mori, Yoshiaki Nakamura
ACS Applied Energy Materials Vol. 3 p. 1235-1241 2019/12/30 Research paper (scientific journal)
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Evaluation of the optical characteristics of a type-II InAs/GaSb superlattice infrared p–i–n photodetector
Y. Le Thi, Y. Kamakura, N. Mori
Japanese Journal of Applied Physics Vol. 58 p. 081003-1-081003-8 2019/07 Research paper (scientific journal)
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Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors
Tomoki Hoshino, Nobuya Mori
Japanese Journal of Applied Physics Vol. 58 No. SC p. SCCD10-SCCD10 2019/06/01 Research paper (scientific journal)
Publisher: IOP Publishing
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Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures
Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Nobuyasu Naruse, Yutaka Mera, Takeshi Fujita, Md. Mahfuz Alam, Kentarou Sawano, Nobuya Mori, Yoshiaki Nakamura
Materials Today Energy Vol. 13 p. 56-63 2019/05 Research paper (scientific journal)
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Nonequilibrium Green function simulation of coupled electron–phonon transport in one-dimensional nanostructures
Y. Kajiwara, N. Mori
Japanese Journal of Applied Physics Vol. 58 No. SD p. SDDE05-1-SDDE05-8 2019/05 Research paper (scientific journal)
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Intra-collisional field effect in one-dimensional GaN nanowires
S. Makihira, N. Mori
Japanese Journal of Applied Physics Vol. 58 No. SC p. SCCB26-1-SCCB26-6 2019/05 Research paper (scientific journal)
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Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled si nanostructures
S. Sakane, T. Ishibe, T. Taniguchi, N. Naruse, Y. Mera, T. Fujita, Md. M. Alam, K. Sawano, N. Mori, Y. Nakamura
Materials Today Energy Vol. 13 p. 56-63 2019/05 Research paper (scientific journal)
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Simulation of dark current characteristics of type-II InAs/GaSb superlattice mid-wavelength infrared p–i–n photodetector
Y. Le Thi, Y. Kamakura, N. Mori
Japanese Journal of Applied Physics Vol. 58 No. 4 p. 044002-1-044002-7 2019/03 Research paper (scientific journal)
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Methodology of thermoelectric power factor enhancement by controlling nanowire interface
T. Ishibe, A. Tomeda, K. Watanabe, Y. Kamakura, N. Mori, N. Naruse, Y. Mera, Y. Yamashita, Y. Nakamura
ACS Applied Materials & Interfaces Vol. 10 p. 37709-37716 2018/10 Research paper (scientific journal)
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Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings
T. Hoshino, N. Mori
Japanese Journal of Applied Physics 2018/02 Research paper (scientific journal)
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Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions
T. Kuroda, N. Mori
Japanese Journal of Applied Physics Vol. 57 p. 04FP03-1-04FP03-6 2018/02 Research paper (scientific journal)
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Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence
Ryutaro Suda, Mamiko Yagi, Akira Kojima, Nobuya Mori, Jun-ichi Shirakashi, Nobuyoshi Koshida
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 p. 44-49 2017/11 Research paper (scientific journal)
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Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band Monte Carlo simulation
R. Fujita, K. Konaga, Y. Ueoka, Y. Kamakura, N. Mori, T. Kotani
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD Vol. 2017-September p. 289-292 2017/10/25 Research paper (international conference proceedings)
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Inter-layer coupling effects on vertical electron transport in multilayer graphene nanoribbons
F. Hashimoto, N. Mori
Journal of Physics: Conference Series Vol. 906 p. 012004-1-012004-4 2017/08 Research paper (scientific journal)
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Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots
O. Makarovsky, L. Turyanska, N. Mori, M. Greenaway, L. Eaves, A. Patanè, M. Fromhold, S. Lara-Avila, S. Kubatkin, R. Yakimova
2D Materials 2017/06 Research paper (scientific journal)
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The theoretical highest frame rate of silicon image sensors
T. G. Etoh, A. Q. Nguyen, Y. Kamakura, K. Shimonomura, T. Y. Le, N. Mori
Sensors 2017/02 Research paper (scientific journal)
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Electronic states of coupled graphene nanoribbons
F. Hashimoto, N. Mori, O. Kubo, M. Katayama
Japanese Journal of Applied Physics 2017/02 Research paper (scientific journal)
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Mobility enhancement of CVD graphene by spatially correlated charges
L. Turyanska, O. Makarovsky, L. Eaves, A. Patane, N. Mori
2D Materials 2017/02 Research paper (scientific journal)
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Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode
D. M. Di Paola, M. Kesaria, O. Makarovsky, A. Velichko, L. Eaves, N. Mori, A. Krier, A. Patane
SCIENTIFIC REPORTS Vol. 6 p. 32039-1-32039-8 2016/08 Research paper (scientific journal)
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Random phonon model of dissipative electron transport in nanowire MOSFETs
G. Mil'nikov, N. Mori
Journal of Computational Electronics Vol. 15 p. 1179-1191 2016/07 Research paper (scientific journal)
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Reductive Deposition of Thin Cu Films Using Ballistic Hot Electrons as a Printing Beam
R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, N. Koshida
JOURNAL OF THE ELECTROCHEMICAL SOCIETY Vol. 163 No. 6 p. E162-E165 2016 Research paper (scientific journal)
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Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors
Masato Ichii, Ryoma Ishida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 62 No. 4 p. 1255-1261 2015/04 Research paper (scientific journal)
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Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors
Clendennen Casey, Mori Nobuya, Tsuchiya Hideaki
JASSE Vol. 2 No. 1 p. 171-177 2015/03 Research paper (scientific journal)
Publisher: Japan Society for Simulation Technology
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Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films
Suda Ryutaro, Yagi Mamiko, Kojima Akira, Mentek Romain, Mori Nobuya, Shirakashi Jun-ichi, Koshida Nobuyoshi
Jpn. J. Appl. Phys. Vol. 54 No. 4S p. 04DH11-1-04DH11-5 2015/03 Research paper (scientific journal)
Publisher: Institute of Physics
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Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films
Suda Ryutaro, Yagi Mamiko, Kojima Akira, Mentek Romain, Mori Nobuya, Shirakashi Jun-ichi, Koshida Nobuyoshi
Jpn. J. Appl. Phys. Vol. 54 No. 4S p. 04DH11-1-04DH11-2 2015/03 Research paper (scientific journal)
Publisher: Institute of Physics
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Effects of increased acoustic phonon deformation potential and surface roughness scattering on quasi-ballistic transport in ultrascaled Si-MOSFETs
Shunsuke Koba, Ryoma Ishida, Yuko Kubota, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 No. 11 p. 114301-1-114301-8 2014/11 Research paper (scientific journal)
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Spectroscopic study of graphene nanoribbons formed by crystallographic etching of highly oriented pyrolytic graphite
Yoshihiro Sugiyama, Osamu Kubo, Ryosuke Omura, Masaaki Shigehara, Hiroshi Tabata, Nobuya Mori, Mitsuhiro Katayama
Applied Physics Letters Vol. 105 No. 12 p. 123116-1-123116-5 2014/09/22 Research paper (scientific journal)
Publisher: American Institute of Physics Inc.
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Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels
A. V. Velichko, O. Makarovsky, N. Mori, L. Eaves, A. Krier, Q. Zhuang, A. Patanè
Physical Review B - Condensed Matter and Materials Physics Vol. 90 No. 8 2014/08/20 Research paper (scientific journal)
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Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels
A. V. Velichko, O. Makarovsky, N. Mori, L. Eaves, A. Krier, Q. Zhuang, A. Patane
PHYSICAL REVIEW B Vol. 90 No. 8 2014/08 Research paper (scientific journal)
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Electron mobility calculation for graphene on substrates
Hideki Hirai, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
JOURNAL OF APPLIED PHYSICS Vol. 116 No. 8 p. 083703-1-083703-6 2014/08 Research paper (scientific journal)
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Ballistic hot electron effects in nanosilicon dots and their photonic applications
N. Koshida, N. Ikegami, A. Kojima, R. Mentek, R. Suda, M. Yagi, J. Shirakashi, B. Gelloz, N. Mori
NANOSCALE LUMINESCENT MATERIALS 3 Vol. 61 No. 5 p. 47-54 2014 Research paper (international conference proceedings)
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Nonequilibrium green function simulations of graphene-nanoribbon resonant-tunneling transistors
Nobuya Mori, Takuya Edagawa, Yoshinari Kamakura, Laurence Eaves
Japanese Journal of Applied Physics Vol. 53 No. 4 2014 Research paper (international conference proceedings)
Publisher: Japan Society of Applied Physics
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Electro-Deposition of Thin Si and Ge Films Based on Ballistic Hot Electron Injection
N. Koshida, A. Kojima, T. Ohta, R. Mentek, B. Gelloz, N. Mori, J. Shirakashi
ECS SOLID STATE LETTERS Vol. 3 No. 5 p. P57-P60 2014 Research paper (scientific journal)
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Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport
Shiro Kaneko, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
Applied Physics Express Vol. 7 No. 3 2014 Research paper (scientific journal)
Publisher: Japan Society of Applied Physics
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Channel length scaling limits of III-V channel MOSFETs governed by source-drain direct tunneling
Shunsuke Koba, Masaki Ohmori, Yosuke Maegawa, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
Japanese Journal of Applied Physics Vol. 53 No. 4 2014 Research paper (international conference proceedings)
Publisher: Japan Society of Applied Physics
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Universal conductance statistics in a backscattering model: Solving the Dorokhov-Mello-Pereyra-Kumar equation with beta=1, 2, and 4
Gennady Mil'nikov, Nobuya Mori
PHYSICAL REVIEW B Vol. 88 No. 15 2013/10 Research paper (scientific journal)
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Scattering basis representation in ballistic transport simulations of nanowire transistors
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura
MATHEMATICAL AND COMPUTER MODELLING Vol. 58 No. 1-2 p. 312-320 2013/07 Research paper (scientific journal)
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Increased Subthreshold Current due to Source-Drain Direct Tunneling in Ultrashort-Channel III-V Metal-Oxide-Semiconductor Field-Effect Transistors
Shunsuke Koba, Yosuke Maegawa, Masaki Ohmori, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
APPLIED PHYSICS EXPRESS Vol. 6 No. 6 2013/06 Research paper (scientific journal)
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Analytic Circuit Model of Ballistic Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor for Transient Analysis
Tatsuhiro Numata, Shigeyasu Uno, Yoshinari Kamakura, Nobuya Mori, Kazuo Nakazato
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 No. 4 2013/04 Research paper (scientific journal)
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Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array
Nobuya Mori, Masanori Tomita, Hideki Minari, Takanobu Watanabe, Nobuyoshi Koshida
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 No. 4 2013/04 Research paper (scientific journal)
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Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit
Kenta Shimoida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
APPLIED PHYSICS EXPRESS Vol. 6 No. 3 2013/03 Research paper (scientific journal)
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A Self-Consistent Compact Model of Ballistic Nanowire MOSFET With Rectangular Cross Section
Tatsuhiro Numata, Shigeyasu Uno, Junichi Hattori, Gennady Mil'nikov, Yoshinari Kamakura, Nobuya Mori, Kazuo Nakazato
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 60 No. 2 p. 856-862 2013/02 Research paper (scientific journal)
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Random evolution approach to universal conductance statistics
Gennady Milnikov, Nobuya Mori
Physical Review B - Condensed Matter and Materials Physics Vol. 87 No. 3 2013/01/30 Research paper (scientific journal)
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Effects of Atomic Disorder on Impact Ionization Rate in Silicon Nanodots
N. Mori, M. Tomita, H. Minar, T. Watanabe, N. Koshida
PHYSICS OF SEMICONDUCTORS Vol. 1566 p. 381-+ 2013 Research paper (international conference proceedings)
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Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance
Masashi Uematsu, Kohei M. Itoh, Gennady Mil'nikov, Hideki Minari, Nobuya Mori
NANOSCALE RESEARCH LETTERS Vol. 7 p. 1-6 2012/12 Research paper (scientific journal)
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Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices
YiKai Zhou, Mohamed Almokhtar, Hitoshi Kubo, Nobuya Mori, Shuichi Emura, Shigehiko Hasegawa, Hajime Asahi
SOLID STATE COMMUNICATIONS Vol. 152 No. 14 p. 1270-1273 2012/07 Research paper (scientific journal)
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Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array
Nobuya Mori, Hideki Minari, Shigeyasu Uno, Hiroshi Mizuta, Nobuyoshi Koshida
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 No. 4 2012/04 Research paper (scientific journal)
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Theory of Resonant Tunneling through a Donor State
Nobuya Mori, Amalia Patane, Laurence Eaves
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 No. 2 2012/02 Research paper (scientific journal)
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Equivalent transport models in atomistic quantum wires
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura
Physical Review B - Condensed Matter and Materials Physics Vol. 85 No. 3 2012/01/23 Research paper (scientific journal)
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Erratum: Application of the R-matrix method in quantum transport simulations: Continuous model (Journal of Computational Electronics DOI: 10.1007/s10825-011-0345-z)
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura
Journal of Computational Electronics Vol. 10 No. 1-2 2011/06 Research paper (scientific journal)
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Acoustic phonon modulation and electron-phonon interaction in semiconductor slabs and nanowires
Shigeyasu Uno, Junichi Hattori, Kazuo Nakazato, Nobuya Mori
JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 10 No. 1-2 p. 104-120 2011/06 Research paper (scientific journal)
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Application of the R-matrix method in quantum transport simulations
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura
JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 10 No. 1-2 p. 51-64 2011/06 Research paper (scientific journal)
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Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires
Nobuya Mori, Hideki Minari, Shigeyasu Uno, Junichi Hattori
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 50 No. 4 2011/04 Research paper (scientific journal)
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Magnetophonon Resonance in Monolayer Graphene
Nobuya Mori, Tsuneya Ando
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN Vol. 80 No. 4 p. 044706-044706 2011/04 Research paper (scientific journal)
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Theory of quasiballistic transport through nanocrystalline silicon dots
Nobuya Mori, Hideki Minari, Shigeyasu Uno, Hiroshi Mizuta, Nobuyoshi Koshida
APPLIED PHYSICS LETTERS Vol. 98 No. 6 2011/02 Research paper (scientific journal)
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Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance
Hideki Minari, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Shigeyasu Uno, Nobuya Mori
Digest of Technical Papers - Symposium on VLSI Technology p. 122-123 2011 Research paper (international conference proceedings)
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Application of the R-matrix method in quantum transport simulations
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura
JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 9 No. 3-4 p. 256-261 2010/12 Research paper (scientific journal)
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Manipulating and Imaging the Shape of an Electronic Wave Function by Magnetotunneling Spectroscopy
A. Patane, N. Mori, O. Makarovsky, L. Eaves, M. L. Zambrano, J. C. Arce, L. Dickinson, D. K. Maude
PHYSICAL REVIEW LETTERS Vol. 105 No. 23 2010/12 Research paper (scientific journal)
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Universality in electron-modulated-acoustic-phonon interactions in a free-standing semiconductor nanowire
Junichi Hattori, Shigeyasu Uno, Nobuya Mori, Kazuo Nakazato
MATHEMATICAL AND COMPUTER MODELLING Vol. 51 No. 7-8 p. 880-887 2010/04 Research paper (scientific journal)
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A computationally cost-effective interleaving method for atomistic non-equilibrium Green's function simulation
Hideki Minari, Nobuya Mori
MATHEMATICAL AND COMPUTER MODELLING Vol. 51 No. 7-8 p. 888-892 2010/04 Research paper (scientific journal)
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Form factor increase and its physical origins in electron-modulated acoustic phonon interaction in a free-standing semiconductor plate
Shigeyasu Uno, Junichi Hattori, Kazuo Nakazato, Nobuya Mori
MATHEMATICAL AND COMPUTER MODELLING Vol. 51 No. 7-8 p. 863-872 2010/04 Research paper (scientific journal)
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Scaling consideration and compact model of electron scattering enhancement due to acoustic phonon modulation in an ultrafine free-standing cylindrical semiconductor nanowire
Junichi Hattori, Shigeyasu Uno, Kazuo Nakazato, Nobuya Mori
JOURNAL OF APPLIED PHYSICS Vol. 107 No. 3 2010/02 Research paper (scientific journal)
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Impact of Attractive Ion in Undoped Channel on Characteristics of Nanoscale Multigate Field Effect Transistors: A Three-Dimensional Nonequilibrium Green's Function Study
Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori, Kenji Taniguchi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)
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Analytical Compact Model of Ballistic Cylindrical Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor
Tatsuhiro Numata, Shigeyasu Uno, Kazuo Nakazato, Yoshinari Kamakura, Nobuya Mori
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)
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Electron-Modulated-Acoustic-Phonon Interactions in a Coated Silicon Nanowire
Junichi Hattori, Shigeyasu Uno, Nobuya Mori, Kazuo Nakazato
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)
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Impact of Interface Roughness on Threshold-Voltage Variation in Ultrasmall Gate-All-Around and Double-Gate Field-Effect Transistors
Nobuya Mori, Hideki Minari
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)
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Hole Transport Mechanism in Silicon and Germanium Nanowire Field Effect Transistors
Hideki Minari, Nobuya Mori
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)
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R-matrix method for quantum transport simulations in discrete systems
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura
PHYSICAL REVIEW B Vol. 79 No. 23 2009/06 Research paper (scientific journal)
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Sum rules and universality in electron-modulated acoustic phonon interaction in a free-standing semiconductor plate
Shigeyasu Uno, Darryl Yong, Nobuya Mori
PHYSICAL REVIEW B Vol. 79 No. 23 2009/06 Research paper (scientific journal)
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Dopant-Induced Intrinsic Bistability in a Biased Nanowire
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki
PHYSICAL REVIEW LETTERS Vol. 102 No. 3 2009/01 Research paper (scientific journal)
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Solution of the Poisson Equation with Coulomb Singularities
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 47 No. 10 p. 7765-7770 2008/10 Research paper (scientific journal)
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Atomistic modeling of hole transport in ultra-thin body SOI pMOSFETs
Hideki Minari, Nobuya Mori
JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 7 No. 3 p. 293-296 2008/09 Research paper (scientific journal)
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Effects of phonon scattering on electron transport in double-gate MOSFETs
Nobuya Mori, Hiroshi Takeda, Hideki Minari
JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 7 No. 3 p. 268-271 2008/09 Research paper (scientific journal)
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R-matrix theory of quantum transport and recursive propagation method for device simulations
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki
JOURNAL OF APPLIED PHYSICS Vol. 104 No. 4 2008/08 Research paper (scientific journal)
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R-matrix theory of quantum transport in nanoscale electronic devices
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki
APPLIED PHYSICS EXPRESS Vol. 1 No. 6 2008/06 Research paper (scientific journal)
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Impact of strain on ballistic current in Si n-i-n structures
Hideki Minari, Nobuya Mori
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 47 No. 4 p. 2621-2623 2008/04 Research paper (scientific journal)
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Phonon scattering of hot electrons in intense mid-infrared laser fields
H. Furuse, N. Mori, H. Kubo, H. Momose, M. Kondow
Physica Status Solidi (C) Current Topics in Solid State Physics Vol. 5 No. 1 p. 286-289 2008 Research paper (international conference proceedings)
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Resonant tunneling through a dilute nitride quantum well
N. Mori, G. Allison, A. Patane, L. Eaves
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 Vol. 5 No. 1 p. 198-+ 2008 Research paper (international conference proceedings)
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Magnetic-field-induced miniband conduction in semiconductor superlattices
Daivid Fowler, David P. A. Hardwick, Amalia Patane, Mark T. Greenaway, Alexander G. Balanov, Timothy M. Fromhold, Laurence Eaves, Mohamed Henini, Nadezda Kozlova, Jens Freudenberger, Nobuya Mori
PHYSICAL REVIEW B Vol. 76 No. 24 2007/12 Research paper (scientific journal)
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Analytical description of intravalley acoustic phonon limited electron mobility in ultrathin si plate incorporating phonon modulation due to plate interfaces
Shigeyasu Uno, Nobuya Mori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS Vol. 46 No. 36-40 p. L923-L926 2007/10 Research paper (scientific journal)
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Transmission study of germanium using free-electron laser
H. Furuse, N. Mori, H. Kubo, H. Momose, M. Kondow
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Vol. 18 p. S81-S85 2007/10 Research paper (scientific journal)
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Numerical simulation of hole transport in silicon nanostructures
Hideki Minari, Nobuya Mori
JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 6 No. 1-3 p. 223-225 2007/09 Research paper (scientific journal)
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Implementation of the Bloch operator method for solving the Poisson equation
Gennady V. Mil'Nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezakil
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 46 No. 9A p. 5734-5737 2007/09 Research paper (scientific journal)
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Measurement of the temperature dependence of midinfrared optical absorption spectra of germanium in intense laser fields
H. Furuse, N. Mori, H. Kubo, H. Momose, M. Kondow
PHYSICAL REVIEW B Vol. 75 No. 20 2007/05 Research paper (scientific journal)
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Effects of strained layers on Zener tunneling in silicon nanostructures
Hideki Minari, Nobuya Mori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 46 No. 4B p. 2076-2078 2007/04 Research paper (scientific journal)
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Midinfrared optical absorption in germanium measured with a free-electron laser at room temperature
H. Furuse, N. Mori, H. Kubo, H. Momose, M. Kondow
PHYSICAL REVIEW B Vol. 74 No. 20 2006/11 Research paper (scientific journal)
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Strong effect of resonant impurities on Landau-level quantization
G. Allison, N. Mori, A. Patane, J. Endicott, L. Eaves, D. K. Maude, M. Hopkinson
PHYSICAL REVIEW LETTERS Vol. 96 No. 23 2006/06 Research paper (scientific journal)
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Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates
H Momose, H Okai, H Deguchi, N Mori, S Takeyama
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 32 No. 1-2 p. 309-312 2006/05 Research paper (scientific journal)
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Periodic magnetoresistance oscillations in side-gated quantum dots
T. Suzuki, H. Momose, M. Morifuji, N. Mori, M. Kondow
SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES AND FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES, 2005 Vol. 38 p. 116-+ 2006 Research paper (international conference proceedings)
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Current flow and energy dissipation in low-dimensional semiconductor superlattices
D Fowler, A Patane, A Ignatov, L Eaves, M Henini, N Mori, DK Maude, R Airey
APPLIED PHYSICS LETTERS Vol. 88 No. 5 2006/01 Research paper (scientific journal)
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Impurity cyclotron resonance in InGaAs/AlAs superlattice under ultra high magnetic fields
H Momose, H Deguchi, H Okai, N Mori, S Takeyama
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 29 No. 3-4 p. 606-608 2005/11 Research paper (scientific journal)
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Theoretical investigation of electron-phonon interaction in one-dimensional silicon quantum dot array interconnected with silicon oxide layers
S Uno, N Mori, K Nakazato, N Koshida, H Mizuta
PHYSICAL REVIEW B Vol. 72 No. 3 2005/07 Research paper (scientific journal)
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Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides
S Uno, N Mori, K Nakazato, N Koshida, H Mizuta
JOURNAL OF APPLIED PHYSICS Vol. 97 No. 11 2005/06 Research paper (scientific journal)
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Three-dimensional quantum transport simulation of ultra-small FinFETs
H. Takeda, N. Mori
Journal of Computational Electronics Vol. 4 No. 1-2 p. 31-34 2005/04 Research paper (scientific journal)
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Effective-mass theory of graphite/porous-graphite quantum wires
H Takeda, N Mori, K Yoshino
JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 38 No. 8 p. 1205-1210 2005/04 Research paper (scientific journal)
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Mode-coupling effects in non-equilibrium Green's function device simulation
H Takeda, N Mori
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 44 No. 4B p. 2664-2668 2005/04 Research paper (scientific journal)
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Electron-phonon interaction in si quantum dots interconnected with thin oxide layers
S Uno, N Mori, K Nakazato, N Koshida, H Mizuta
Physics of Semiconductors, Pts A and B Vol. 772 p. 797-798 2005 Research paper (international conference proceedings)
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Resonant transport in semiconductor superlattices in a tilted magnetic field
N Mori, C Hamaguchi, A Patane, TM Fromhold, L Eaves
INTERNATIONAL JOURNAL OF MODERN PHYSICS B Vol. 18 No. 27-29 p. 3617-3620 2004/11 Research paper (scientific journal)
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Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors
M. Okamoto, N. Mori
JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 3 No. 3-4 p. 439-442 2004/10 Research paper (scientific journal)
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Magnetic-field-induced suppression of electronic conduction in a superlattice
A Patane, N Mori, D Fowler, L Eaves, M Henini, DK Maude, C Hamaguchi, R Airey
PHYSICAL REVIEW LETTERS Vol. 93 No. 14 2004/10 Research paper (scientific journal)
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Study of electron dynamics in n-type GaN using the Osaka free electron laser
T Takahashi, T Kambayashi, H Kubo, N Mori, N Tsubouchi, L Eaves, CT Foxon
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT Vol. 528 No. 1-2 p. 623-626 2004/08 Research paper (scientific journal)
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Full-band Monte Carlo study on free electron laser induced impact ionization in wurtzite GaN
T Takahashi, N Mori
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 19 No. 4 p. S457-S459 2004/04 Research paper (scientific journal)
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Monte Carlo study of two-dimensional hole transport in a GaAs quantum well
N Mori, H Takeda
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 19 No. 4 p. S17-S19 2004/04 Research paper (scientific journal)
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Nonequilibrium Green's function approach to resonant transport in semiconductor superlattices
N Mori, A Patane, L Eaves
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 21 No. 2-4 p. 717-721 2004/03 Research paper (scientific journal)
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Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs
H. Takeda, N. Mori, C. Hamaguchi
JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 2 No. 2-4 p. 119-122 2003/12 Research paper (scientific journal)
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Electron transport in quantum dot arrays: self-consistent modeling
M Kobayashi, S Miyahara, N Mori, C Hamaguchi
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 19 No. 1-2 p. 188-191 2003/07 Research paper (scientific journal)
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Magneto-tunneling spectroscopy of quantum structures
N Mori, C Hamaguchi, A Patane, L Eaves, PC Main
MICROELECTRONIC ENGINEERING Vol. 63 No. 1-3 p. 109-114 2002/08 Research paper (scientific journal)
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Temperature dependence of the conductance in quasi-one-dimensional superlattices
N Mori, C Hamaguchi, L Eaves, PC Main
MICROELECTRONIC ENGINEERING Vol. 63 No. 1-3 p. 87-90 2002/08 Research paper (scientific journal)
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Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy
A Patane, RJA Hill, L Eaves, PC Main, M Henini, ML Zambrano, A Levin, N Mori, C Hamaguchi, YV Dubrovskii, EE Vdovin, DG Austing, S Tarucha, G Hill
PHYSICAL REVIEW B Vol. 65 No. 16 2002/04 Research paper (scientific journal)
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Transport in quantum dot arrays
N Mori, T Ishida, Y Takamura, C Hamaguchi
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 13 No. 2-4 p. 667-670 2002/03 Research paper (scientific journal)
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Study of electron-hole generation and recombination in semiconductors using the Osaka free electron laser
N Mori, T Takahashi, T Kambayashi, H Kubo, C Hamaguchi, L Eaves, CT Foxon, A Patane, M Henini
PHYSICA B-CONDENSED MATTER Vol. 314 No. 1-4 p. 431-436 2002/03 Research paper (scientific journal)
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Self-consistent calculation of two-dimensional electronic states in SOI-MOSFETs using full-band modeling
H Takeda, N Mori, C Hamaguchi
PHYSICA B-CONDENSED MATTER Vol. 314 No. 1-4 p. 377-380 2002/03 Research paper (scientific journal)
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Luminescence from p-type GaAs crystals under intense mid-infrared irradiation
T Takahashi, T Kambayashi, N Mori, H Kubo, C Hamaguchi, N Tsubouchi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 41 No. 1 p. 88-89 2002/02 Research paper (scientific journal)
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Study of electron transport in SOI MOSFETs using Monte Carlo technique with full-band modeling
Journal of Computational Electronics Vol. Vol. 1, pp. 467-474/, 2002
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Full-band {Monte Carlo} simulation of two-dimensional electron gas in SOI MOSFETs
Journal of Computational Electronics Vol. Vol. 1, pp. 219-222/, 2002
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Monte Carlo simulation of miniband conduction in Landau-quantized superlattices
N Mori, C Hamaguchi, L Eaves, PC Main
PHYSICA B Vol. 298 No. 1-4 p. 329-332 2001/04 Research paper (scientific journal)
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Reduction of electron decay time using disordered tunnel barrier
JH Park, S Senzaki, N Mori, C Hamaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 40 No. 3B p. 1970-1972 2001/03 Research paper (scientific journal)
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Numerical studies of miniband conduction in quasi-one-dimensional superlattices
N Mori, C Hamaguchi, L Eaves, PC Main
VLSI DESIGN Vol. 13 No. 1-4 p. 45-50 2001 Research paper (scientific journal)
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Conductance fluctuations in a double-barrier resonant tunneling device
PC Main, TJ Foster, P McDonnell, L Eaves, MJ Gompertz, N Mori, JW Sakai, A Henini, G Hill
PHYSICAL REVIEW B Vol. 62 No. 24 p. 16721-16726 2000/12 Research paper (scientific journal)
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Reduction in relaxation time due to ionized impurities in GaAs/AlGaAs quantum well structures
JH Park, S Senzaki, N Mori, C Hamaguchi
SUPERLATTICES AND MICROSTRUCTURES Vol. 27 No. 5-6 p. 505-508 2000/05 Research paper (scientific journal)
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Cyclotron masses in InGaAs/GaAs superlattices and InGaAs/AlAs superlattices
H Momose, S Uehara, N Mori, C Hamaguchi, H Arimoto, T Ikaida, N Miura
SUPERLATTICES AND MICROSTRUCTURES Vol. 27 No. 5-6 p. 525-528 2000/05 Research paper (scientific journal)
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Luminescence from GaAs/AlGaAs quantum wells induced by mid-infrared free electron laser pulses
H Nakano, H Kubo, N Mori, C Hamaguchi, L Eaves
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 7 No. 3-4 p. 555-558 2000/05 Research paper (scientific journal)
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Conductance fluctuations in a double-barrier resonant tunneling device
Physical Review B Vol. 62 No. 24 p. 16721-16726 2000
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Monte Carlo simulation of conductance characteristics in SOI-MOSFET
S Araya, K Yamasaki, H Ueno, N Mori, C Hamaguchi, LM Perron, AL Lacaita
PHYSICA B Vol. 272 No. 1-4 p. 565-567 1999/12 Research paper (scientific journal)
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Monte Carlo study on electron motion under mid-infrared free-electron-laser pulses
N Mori, H Nakano, H Kubo, C Hamaguchi, L Eaves
PHYSICA B-CONDENSED MATTER Vol. 272 No. 1-4 p. 431-433 1999/12 Research paper (scientific journal)
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Magnetic field quenching of miniband conduction in quasi-one-dimensional superlattices
L Eaves, HM Murphy, A Nogaret, ST Stoddart, PC Main, M Henini, N Mori, C Hamaguchi, DK Maude, JC Portal
PHYSICA B Vol. 272 No. 1-4 p. 190-193 1999/12 Research paper (scientific journal)
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Cyclotron resonance in (GaAs)(n)/(AlAs)(n) superlattices under ultra-high magnetic-fields
H Momose, N Mori, C Hamaguchi, T Ikaida, H Arimoto, N Miura
PHYSICA E Vol. 4 No. 4 p. 286-291 1999/10 Research paper (scientific journal)
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Impurity cyclotron resonance in type-I (GaAs)(n)/(AlAs)(n) superlattices
H Momose, N Mori, C Hamaguchi, T Ikaida, H Arimoto, N Miura
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Vol. 64 No. 2 p. 137-141 1999/09 Research paper (scientific journal)
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Conductance through zigzag quantum dots arrays
H Ueno, K Moriyasu, Y Wada, S Osako, H Kubo, N Mori, C Hamaguchi
MICROELECTRONIC ENGINEERING Vol. 47 No. 1-4 p. 127-129 1999/06 Research paper (scientific journal)
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New developments in superlattice transport: quenching of miniband conduction in high magnetic fields
HM Murphy, L Eaves, A Nogaret, ST Stoddart, PC Main, M Henini, N Mori, C Hamaguchi, DK Maude, JC Portal
MICROELECTRONIC ENGINEERING Vol. 47 No. 1-4 p. 65-68 1999/06 Research paper (scientific journal)
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Monte Carlo simulation of one- and two-dimensional electron gases
K Yamasaki, T Ezaki, N Mori, C Hamaguchi
COMPOUND SEMICONDUCTORS 1998 No. 162 p. 313-318 1999 Research paper (scientific journal)
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Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells
JH Park, S Ozaki, N Mori, C Hamaguchi
SUPERLATTICES AND MICROSTRUCTURES Vol. 25 No. 1-2 p. 445-451 1999/01 Research paper (scientific journal)
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Conductance through laterally coupled quantum dots
H Ueno, K Moriyasu, Y Wada, S Osako, H Kubo, N Mori, C Hamaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 38 No. 1B p. 332-335 1999/01 Research paper (scientific journal)
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A study of miniband conduction in Wannier-Stark superlattices at high magnetic fields
HM Murphy, A Nogaret, ST Stoddart, L Eaves, PC Main, M Henini, DK Maude, N Mori, JC Portal, C Hamaguchi
PHYSICA B-CONDENSED MATTER Vol. 256 p. 544-547 1998/12 Research paper (scientific journal)
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Luminescence of GaAs/AlGaAs asymmetric double-quantum-wells excited by a mid-IR free electron laser
H Nakano, JM Feng, H Kubo, N Mori, C Hamaguchi
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS Vol. 144 No. 1-4 p. 160-165 1998/09 Research paper (scientific journal)
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Electronic properties in quantum dots with asymmetric confining potential
T Ezaki, Y Sugimoto, N Mori, C Hamaguchi
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 13 No. 8A p. A1-A3 1998/08 Research paper (scientific journal)
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Magnetophonon and magneto-intersubband-scattering effects in InAs/AlGaSb heterostructures
S Osako, T Hamano, N Mori, C Hamaguchi, S Sasa, M Inoue
PHYSICA B-CONDENSED MATTER Vol. 249 p. 740-744 1998/06 Research paper (scientific journal)
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Electronic structures in a quantum dot with asymmetric confining potential
T Ezaki, Y Sugimoto, N Mori, C Hamaguchi
PHYSICA B-CONDENSED MATTER Vol. 249 p. 238-242 1998/06 Research paper (scientific journal)
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Combined oscillations of magnetoresistance due to inelastic and elastic scatterings in InAs/AlGaSb quantum well structures
S Osako, T Hamano, K Yamasaki, K Moriyasu, N Mori, C Hamaguchi, S Sasa, M Inoue
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 13 No. 2 p. 181-184 1998/02 Research paper (scientific journal)
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Electronic states in quantum dots: Effects of symmetry of the confining potential
T Ezaki, Y Sugimoto, N Mori, C Hamaguchi
COMPOUND SEMICONDUCTORS 1997 Vol. 156 p. 543-546 1998 Research paper (scientific journal)
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Electronic states in quantum dots: Effects of symmetry of the confining potential
T Ezaki, Y Sugimoto, N Mori, C Hamaguchi
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS p. 543-546 1998 Research paper (international conference proceedings)
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Electron-LA phonon interaction in a quantum dot
T. Ezaki, N. Mori, C. Hamaguchi
VLSI Design Vol. 8 No. 1-4 p. 225-230 1998 Research paper (scientific journal)
Publisher: Taylor and Francis Inc.
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Observation of resonant optical-phonon assisted tunneling in asymmetric double quantum wells
S Ozaki, JM Feng, JH Park, S Osako, H Kubo, M Morifuji, N Mori, C Hamaguchi
JOURNAL OF APPLIED PHYSICS Vol. 83 No. 2 p. 962-965 1998/01 Research paper (scientific journal)
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Optical-phonon assisted tunneling in an asymmetric double-quantum-well structure
JM Feng, S Ozaki, JH Park, H Kubo, N Mori, C Hamaguchi
PHYSICA STATUS SOLIDI B-BASIC RESEARCH Vol. 204 No. 1 p. 412-415 1997/11 Research paper (scientific journal)
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Energy relaxation time of electrons in quantum dots
T Ezaki, N Mori, C Hamaguchi
PHYSICA STATUS SOLIDI B-BASIC RESEARCH Vol. 204 No. 1 p. 272-274 1997/11 Research paper (scientific journal)
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Self-consistent approximation for electron-optical-phonon interaction in a quantum wire
N Mori, H Momose, C Hamaguchi
PHYSICA STATUS SOLIDI B-BASIC RESEARCH Vol. 204 No. 1 p. 268-271 1997/11 Research paper (scientific journal)
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Resonant optical-phonon assisted tunnelling in an asymmetric double-quantum-well structure
JM Feng, JH Park, S Ozaki, H Kubo, N Mori, C Hamaguchi
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 12 No. 9 p. 1116-1120 1997/09 Research paper (scientific journal)
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Effect of quantum confinement and lattice relaxation on electronic states in GaAs/In0.2Ga0.8As/GaAs quantum dots
K Moriyasu, S Osako, N Mori, C Hamaguchi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 36 No. 6B p. 3932-3935 1997/06 Research paper (scientific journal)
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Magnetotransport of low dimensional electron gas in InAs/AlGaSb heterostructures
Takafumi Hamano, Katsuji Moriyasu, Shin-Ichi Osako, Nobuya Mori, Chihiro Hamaguchi, Shigehiko Sasa, Masataka Inoue
Technology Reports of the Osaka University Vol. 47 No. 2267-2282 p. 61-69 1997/04/15 Research paper (scientific journal)
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Electronic structures in circular, elliptic, and triangular quantum dots
T. Ezaki, N. Mori, C. Hamaguchi
Physical Review B - Condensed Matter and Materials Physics Vol. 56 No. 11 p. 6428-6431 1997 Research paper (scientific journal)
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Low-dimensional systems in ultra-high magnetic fields: Magnetic-field-induced type I to type II transitions in short-period semiconductor superlattices
N Miura, Y Shimamoto, Y Imanaka, H Arimoto, H Nojiri, H Kunimatsu, K Uchida, T Fukuda, K Yamanaka, H Momose, N Mori, C Hamaguchi
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 11 No. 11 p. 1586-1590 1996/11 Research paper (scientific journal)
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Angular dependent cyclotron resonance in short period (GaAs)(n)/(AlAs)(n) superlattices
K Yamanaka, H Momose, N Mori, C Hamaguchi, H Arimoto, Y Imanaka, Y Shimamoto, N Miura
PHYSICA B Vol. 227 No. 1-4 p. 356-359 1996/09 Research paper (scientific journal)
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D- centers probed by resonant tunneling spectroscopy
JGS Lok, AK Geim, JC Maan, Marmorkos, I, FM Peeters, N Mori, L Eaves, TJ Foster, PC Main, JW Sakai, M Henini
PHYSICAL REVIEW B Vol. 53 No. 15 p. 9554-9557 1996/04 Research paper (scientific journal)
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Mesoscopic conductance fluctuations in impurity-assisted resonant tunnelling
P McDonnell, TJ Foster, PC Main, L Eaves, N Mori, JW Sakai, M Henini, G Hill
SOLID-STATE ELECTRONICS Vol. 40 No. 1-8 p. 409-412 1996 Research paper (scientific journal)
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Cyclotron resonance in short period (GaAs)(n)/(A1As)(n) superlattices
T Fukuda, K Yamanaka, H Momose, N Mori, C Hamaguchi, Y Imanaka, Y Shimamoto, N Miura
SURFACE SCIENCE Vol. 361 No. 1-3 p. 406-410 1996 Research paper (scientific journal)
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Resonant tunnelling through D- states
JGS Lok, AK Geim, JC Maan, Marmorkos, I, FM Peeters, N Mori, L Eaves, P McDonnell, M Henini, JW Sakai, PC Main
SURFACE SCIENCE Vol. 361 No. 1-3 p. 247-250 1996 Research paper (scientific journal)
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D∧-centers probed by resonant tunneling spectroscopy
Physical Review B Vol. 53 No. 15 p. 9554-9557 1996
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A novel approach in fabrication and study of laterally quantum-confined resonant tunnelling diodes
JN Wang, PH Beton, N Mori, L Eaves, PC Main, TJ Foster, M Henini
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Vol. 35 No. 1-3 p. 192-197 1995/12 Research paper (scientific journal)
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MEASURING THE PROBABILITY DENSITY OF QUANTUM-CONFINED STATES
PH BETON, J WANG, N MORI, L EAVES, PC MAIN, TJ FOSTER, M HENINI
PHYSICAL REVIEW LETTERS Vol. 75 No. 10 p. 1996-1999 1995/09 Research paper (scientific journal)
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LANDAU-LEVEL POPULATIONS AND SLOW ENERGY RELAXATION OF A 2-DIMENSIONAL ELECTRON-GAS PROBED BY TUNNELING SPECTROSCOPY
BRA NEVES, N MORI, PH BETON, L EAVES, J WANG, M HENINI
PHYSICAL REVIEW B Vol. 52 No. 7 p. 4666-4669 1995/08
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EFFECT OF A PARALLEL MAGNETIC-FIELD ON THE RESONANT-TUNNELING CURRENT THROUGH A QUANTUM-WIRE
N MORI, PH BETON, J WANG, L EAVES
PHYSICAL REVIEW B Vol. 52 No. 3 p. 1504-1507 1995/07
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RESONANT MAGNETOTUNNELING VIA QUANTUM-CONFINED STATES
PH BETON, J WANG, N MORI, L EAVES, H BUHMANN, L MANSOURI, PC MAIN, TJ FOSTER, M HENINI
PHYSICA B Vol. 211 No. 1-4 p. 423-429 1995/05 Research paper (scientific journal)
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ELECTRON-CONCENTRATION-DEPENDENT QUANTUM-WELL LUMINESCENCE - EVIDENCE FOR A NEGATIVELY CHARGED EXCITON
H BUHMANN, L MANSOURI, J WANG, PH BETON, N MORI, L EAVES, M HENINI, M POTEMSKI
PHYSICAL REVIEW B Vol. 51 No. 12 p. 7969-7972 1995/03
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THEORY OF RESONANT-TUNNELING THROUGH A QUANTUM-WIRE
N MORI, PH BETON, J WANG, L EAVES
PHYSICAL REVIEW B Vol. 51 No. 3 p. 1735-1742 1995/01 Research paper (scientific journal)
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RESONANT-TUNNELING QUANTUM DOTS AND WIRES - SOME RECENT PROBLEMS AND PROGRESS
PH BETON, H BUHMANN, L EAVES, TJ FOSTER, AK GEIM, N LASCALA, PC MAIN, L MANSOURI, N MORI, JW SAKAI, J WANG
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 9 No. 11 p. 1912-1918 1994/11 Research paper (scientific journal)
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RESONANT-TUNNELING THROUGH DONOR MOLECULES
AK GEIM, TJ FOSTER, A NOGARET, N MORI, PJ MCDONNELL, N LASCALA, PC MAIN, L EAVES
PHYSICAL REVIEW B Vol. 50 No. 11 p. 8074-8077 1994/09
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SUBMICROMETER RESONANT-TUNNELING DIODES FABRICATED BY PHOTOLITHOGRAPHY AND SELECTIVE WET ETCHING
J WANG, PH BETON, N MORI, H BUHMANN, L MANSOURI, L EAVES, PC MAIN, TJ FOSTER, M HENINI
APPLIED PHYSICS LETTERS Vol. 65 No. 9 p. 1124-1126 1994/08 Research paper (scientific journal)
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RESONANT MAGNETOTUNNELING VIA ONE-DIMENSIONAL QUANTUM-CONFINED STATES
J WANG, PH BETON, N MORI, L EAVES, H BUHMANN, L MANSOURI, PC MAIN, TJ FOSTER, M HENINI
PHYSICAL REVIEW LETTERS Vol. 73 No. 8 p. 1146-1149 1994/08 Research paper (scientific journal)
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MAGNETOPHONON RESONANCE IN QUANTUM WIRES
C HAMAGUCHI, N MORI, H MOMOSE, T EZAKI, G BERTHOLD, J SMOLINER, E GORNIK, G BOHM, G WEIMANN, T SUSKI, P WISNIEWSKI
PHYSICA B Vol. 201 p. 339-344 1994/07 Research paper (scientific journal)
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NEW MODEL FOR MONTE-CARLO SIMULATION OF HOT-ELECTRONS IN QUANTUM WIRES
H MOMOSE, N MORI, K TANIGUCHI, C HAMAGUCHI
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 9 No. 5 p. 958-960 1994/05 Research paper (scientific journal)
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HOT-ELECTRON TRANSPORT IN QUANTUM STRUCTURES
N MORI, C HAMAGUCHI
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 9 No. 5 p. 941-945 1994/05 Research paper (scientific journal)
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GAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS
T MIYATAKE, S HORIHATA, T EZAKI, H KUBO, N MORI, K TANIGUCHI, C HAMAGUCHI
SOLID-STATE ELECTRONICS Vol. 37 No. 4-6 p. 1187-1190 1994/04 Research paper (scientific journal)
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MAGNETOPHONON RESONANCES IN QUANTUM WIRES
G BERTHOLD, J SMOLINER, E GORNIK, G BOHM, G WEIMANN, T SUSKI, P WISNIEWSKI, C HAMAGUCHI, N MORI, H MOMOSE
SURFACE SCIENCE Vol. 305 No. 1-3 p. 637-642 1994/03 Research paper (scientific journal)
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Resonant tunnelling through donor molecules
Phsical Review B Vol. 50 No. 11 p. 8074-8077 1994
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MAGNETOPHONON RESONANCES IN QUANTUM WIRES
G BERTHOLD, J SMOLINER, C WIRNER, E GORNIK, G BOHM, G WEIMANN, M HAUSER, C HAMAGUCHI, N MORI, H MOMOSE
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 8 No. 5 p. 735-738 1993/05
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ELECTRON-TUNNELING IN GAAS/ALGAAS/GAAS SINGLE-BARRIER HETEROJUNCTION DIODES - ELECTRON PHONON INTERACTION EFFECTS
N MORI, C HAMAGUCHI
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 8 No. 2 p. 197-205 1993/02 Research paper (scientific journal)
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EFFECTS OF ELECTRON INTERFACE-PHONON INTERACTION ON RESONANT TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES
N MORI, K TANIGUCHI, C HAMAGUCHI
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 7 No. 3B p. B83-B87 1992/03 Research paper (scientific journal)
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MAGNETOPHONON RESONANCES IN QUANTUM WIRES
N MORI, H MOMOSE, C HAMAGUCHI
PHYSICAL REVIEW B Vol. 45 No. 8 p. 4536-4539 1992/02
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MAGNETOPHONON RESONANCES IN QUANTUM WIRES
N MORI, H MOMOSE, C HAMAGUCHI
INSTITUTE OF PHYSICS CONFERENCE SERIES No. 127 p. 55-58 1992 Research paper (scientific journal)
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MAGNETOPHONON RESONANCES IN QUANTUM WIRES
N MORI, H MOMOSE, C HAMAGUCHI
QUANTUM EFFECT PHYSICS, ELECTRONICS AND APPLICATIONS Vol. 127 p. 55-58 1992 Research paper (international conference proceedings)
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MAGNETOPHONON RESONANCE IN SEMICONDUCTORS
C HAMAGUCHI, N MORI
PHYSICA B Vol. 164 No. 1-2 p. 85-96 1990/06 Research paper (scientific journal)
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ELECTRON OPTICAL-PHONON INTERACTION IN SINGLE AND DOUBLE HETEROSTRUCTURES
N MORI, T ANDO
PHYSICAL REVIEW B Vol. 40 No. 9 p. 6175-6188 1989/09 Research paper (scientific journal)
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MAGNETOPHONON-RESONANCE THEORY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN ALXGA1-XAS/GAAS SINGLE HETEROSTRUCTURES
N MORI, H MURATA, K TANIGUCHI, C HAMAGUCHI
PHYSICAL REVIEW B Vol. 38 No. 11 p. 7622-7634 1988/10 Research paper (scientific journal)
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ELECTRIC FIELD-INDUCED MAGNETOPHONON RESONANCE
N MORI, N NAKAMURA, K TANIGUCHI, C HAMAGUCHI
SOLID-STATE ELECTRONICS Vol. 31 No. 3-4 p. 777-780 1988/03 Research paper (scientific journal)
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MAGNETOPHONON RESONANCE OF A TWO-DIMENSIONAL ELECTRON-GAS IN A QUANTUM WELL
N MORI, K TANIGUCHI, C HAMAGUCHI, S SASA, S HIYAMIZU
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS Vol. 21 No. 9 p. 1791-1805 1988/03 Research paper (scientific journal)
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MAGNETOPHONON RESONANCE AT HIGH ELECTRIC AND MAGNETIC-FIELDS IN SMALL N+NN+ GAAS STRUCTURES
N MORI, N NAKAMURA, K TANIGUCHI, C HAMAGUCHI
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN Vol. 57 No. 1 p. 205-216 1988/01 Research paper (scientific journal)
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MAGNETOPHONON RESONANCE IN CROSSED HIGH ELECTRIC AND MAGNETIC-FIELDS IN SMALL N+NN+ GAAS STRUCTURES
N MORI, N NAKAMURA, K TANIGUCHI, C HAMAGUCHI
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 2 No. 8 p. 542-546 1987/08