顔写真

PHOTO

Mori Nobuya
森 伸也
Mori Nobuya
森 伸也
Graduate School of Engineering Division of Electrical, Electronic and Information Engineering, Professor

keyword Semiconductor Physics

Research History 3

  1. 2007/04 - 2015/03
    Osaka University Graduate School of Engineering

  2. 2005/04 - 2007/03
    Osaka University Graduate School of Engineering

  3. 2015/04 -
    Osaka University Graduate School of Engineering Professor

Education 4

  1. Osaka University

    - 1991

  2. Osaka University Graduate School, Division of Engineering

    - 1991

  3. Osaka University School of Engineering

    - 1986

  4. Osaka University Faculty of Engineering

    - 1986

Professional Memberships 6

  1. 英国物理学会(Institute of Physics)

  2. 応用物理学会

  3. 日本物理学会

  4. The Institue of Physics

  5. The Japan Society of Applied Physics

  6. The Physical Society of Japan

Research Areas 1

  1. Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Papers 224

  1. Compact empirical tight-binding models for the conduction band of 4H-SiC considering the floating nature of electronic states

    Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics 2025/08/01 Research paper (scientific journal)

  2. Acceleration theorem for low-dimensional electron systems with off-diagonal effective-mass components

    Nobuya Mori, Hajime Tanaka, Jo Okada

    Journal of Applied Physics 2025/06/28 Research paper (scientific journal)

  3. Acoustic Phonon Scattering in Free‐Standing Anisotropic Silicon Plates

    Nobuya Mori

    physica status solidi (b) 2024/12/23 Research paper (scientific journal)

  4. Effect of random potential on two-dimensional electronic states

    Nobuya Mori

    Japanese Journal of Applied Physics 2024/12/10 Research paper (scientific journal)

  5. Impact of interface structure on electronic states in 4H-SiC inversion layer

    Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics 2024/12/04 Research paper (scientific journal)

    Publisher: IOP Publishing
  6. Carrier transport simulations in twisted bilayer and turbostratic multilayer graphene systems

    Seyed Ali Mojtahedzadeh, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 63 No. 5 p. 05SP09-05SP09 2024/05/01 Research paper (scientific journal)

    Publisher: IOP Publishing
  7. Modeling and Simulation of Carrier Transport Properties in 4H-SiC

    Hajime Tanaka, Nobuya Mori

    2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) 2024/04/22 Research paper (international conference proceedings)

    Publisher: IEEE
  8. Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC

    Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori

    Materials Science in Semiconductor Processing Vol. 173 p. 108126-108126 2024/04 Research paper (scientific journal)

    Publisher: Elsevier BV
  9. Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure

    Seyed Ali Mojtahedzadeh, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 63 No. 3 p. 031004-031004 2024/03/01 Research paper (scientific journal)

    Publisher: IOP Publishing
  10. Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness

    Jin Hyong Lim, Nobuya Mori

    Japanese Journal of Applied Physics 2024/02/29 Research paper (scientific journal)

  11. Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential

    Yutoku Murakami, Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics 2024/01/23 Research paper (scientific journal)

    Publisher: IOP Publishing
  12. Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface

    Keisuke Utsumi, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics 2023/12/25 Research paper (scientific journal)

    Publisher: IOP Publishing
  13. Wannier-Stark localization of electronic states in 4H-SiC MOS inversion layer

    Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics 2023/12/25 Research paper (scientific journal)

    Publisher: IOP Publishing
  14. Full-band Monte Carlo analysis of strain effects on carrier transport in GaN

    Wataru Miyazaki, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics 2023/11/27 Research paper (scientific journal)

    Publisher: IOP Publishing
  15. RSDFT-NEGF transport simulations in realistic nanoscale transistors

    Gennady Mil’nikov, Jun-ichi Iwata, Nobuya Mori, Atsushi Oshiyama

    Journal of Computational Electronics 2023/10 Research paper (scientific journal)

  16. Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness

    Jo Okada, Hajime Tanaka, Nobuya Mori

    Applied Physics Express Vol. 16 No. 9 p. 091003-091003 2023/09/01 Research paper (scientific journal)

    Publisher: IOP Publishing
  17. Effects of hydrogen radical treatment on piezoresistance coefficients of germanium

    Kazunori Matsuda, Masashi Yamamoto, Michio Mikawa, Shiro Nagaoka, Nobuya Mori, Kazuo Tsutsui

    Applied Physics Express Vol. 16 No. 4 p. 041003-041003 2023/04/01 Research paper (scientific journal)

    Publisher: IOP Publishing
  18. Tight-binding analysis of the effect of strain on the band structure of GaN

    Wataru Miyazaki, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 62 No. SC p. SC1076-SC1076 2023/02/24 Research paper (scientific journal)

    Publisher: IOP Publishing
  19. Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased condition based on complex band structure

    Yutoku Murakami, Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 62 No. SC p. SC1042-SC1042 2022/12/28 Research paper (scientific journal)

    Publisher: IOP Publishing
  20. Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes

    H. Tanaka, T. Kimoto, N. Mori

    Journal of Applied Physics Vol. 131 No. 22 p. 225701-225701 2022/06/14 Research paper (scientific journal)

    Publisher: AIP Publishing
  21. Electron and Phonon Transport Simulation for Quantum Hybrid System

    Nobuya Mori, Gennady Mil’nikov

    Quantum Science and Technology p. 73-98 2022/05 Part of collection (book)

    Publisher: Springer Nature Singapore
  22. Analytical models for inter-layer tunneling in two-dimensional materials

    Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka

    Japanese Journal of Applied Physics 2021/12/02 Research paper (scientific journal)

    Publisher: IOP Publishing
  23. Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel

    Ryota Negishi, Katsuma Yamamoto, Hirofumi Tanaka, Seyed Ali Mojtahedzadeh, Nobuya Mori, Yoshihiro Kobayashi

    Scientific Reports Vol. 11 No. 1 p. 10206-1-10206-11 2021/12 Research paper (scientific journal)

    Publisher: Springer Science and Business Media LLC
  24. Invited: Monte Carlo Simulation of Electron Mobility in SiC MOSFETs

    Hajime Tanaka, Nobuya Mori

    2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) 2021/11/17 Research paper (international conference proceedings)

    Publisher: IEEE
  25. Analysis of Electronic States at SiC MOS Interface Based on Empirical Pseudopotential Method

    Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) p. 1-2 2021/11/17 Research paper (international conference proceedings)

    Publisher: IEEE
  26. Equivalent model for band-to-band tunneling simulation of direct-gap III–V semiconductor nanowires

    Jo Okada, Futo Hashimoto, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 60 No. 9 p. 091002-1-091002-6 2021/09/01 Research paper (scientific journal)

    Publisher: IOP Publishing
  27. Comparison of linear and quadratic dispersion models for phonon transport in one-dimensional mass-disordered systems

    N. Mori, A. Komada, G. Mil’nikov

    APL Materials Vol. 9 No. 8 p. 081112-1-081112-7 2021/08/01 Research paper (scientific journal)

    Publisher: AIP Publishing
  28. Comparative simulation study of intra-layer band-to-band tunneling in monolayer transition metal dichalcogenides

    Futo Hashimoto, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 60 No. SB p. SBBH12-SBBH12 2021/02/03 Research paper (scientific journal)

    Publisher: IOP Publishing
  29. Reduction of order of device Hamiltonian with adaptive moment estimation

    Jo Okada, Futo Hashimoto, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 60 No. SB p. SBBH08-SBBH08 2021/01/15 Research paper (scientific journal)

    Publisher: IOP Publishing
  30. Thermoelectric Si1−xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators

    Tatsuhiko Taniguchi, Takafumi Ishibe, Ryoya Hosoda, Youya Wagatsuma, Md. Mahfuz Alam, Kentarou Sawano, Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, Nobuya Mori, Yoshiaki Nakamura

    Applied Physics Letters Vol. 117 No. 14 p. 141602-141602 2020/10/05 Research paper (scientific journal)

  31. TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculation

    Hidehiro Asai, Tatsuya Kuroda, Koich Fukuda, Junichi Hattori, Tsutomu Ikegami, Nobuya Mori

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD Vol. 2020-September p. 93-96 2020/09/23 Research paper (international conference proceedings)

  32. Analysis of Hall mobility in two-dimensional disordered systems

    Hajime Tanaka, Nobuya Mori

    Semiconductor Science and Technology Vol. 35 No. 9 p. 095015-095015 2020/09/01 Research paper (scientific journal)

  33. Material dependence of band-to-band tunneling in van der Waals heterojunctions of transition metal dichalcogenides

    Foto Hashimoto, Hajime Tanaka, Nobuya Mori

    Journal of Physics D: Applied Physics 2020/06/17 Research paper (scientific journal)

  34. Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

    Quanshan Lv, Faguang Yan, Nobuya Mori, Wenkai Zhu, Ce Hu, Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, Amalia Patanè, Kaiyou Wang

    Advanced Functional Materials Vol. 30 No. 15 p. 1910713-1910713 2020/04 Research paper (scientific journal)

    Publisher: Wiley
  35. A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors

    Yen Le Thi, Yoshinari Kamakura, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 59 No. 4 p. 044005-044005 2020/04/01 Research paper (scientific journal)

    Publisher: IOP Publishing
  36. Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors

    Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori

    APPLIED PHYSICS EXPRESS Vol. 13 No. 4 2020/04 Research paper (scientific journal)

  37. Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

    Hajime Tanaka, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 59 No. 3 2020/03

  38. Methodology of Thermoelectric Power Factor Enhancement by Nanoscale Thermal Management in Bulk SiGe Composites

    Shunya Sakane, Takafumi Ishibe, Masato Kashino, Kentaro Watanabe, Takeshi Fujita, Yoshinari Kamakura, Nobuya Mori, Yoshiaki Nakamura

    ACS Applied Energy Materials Vol. 3 p. 1235-1241 2019/12/30 Research paper (scientific journal)

  39. Evaluation of the optical characteristics of a type-II InAs/GaSb superlattice infrared p–i–n photodetector

    Y. Le Thi, Y. Kamakura, N. Mori

    Japanese Journal of Applied Physics Vol. 58 p. 081003-1-081003-8 2019/07 Research paper (scientific journal)

  40. Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

    Tomoki Hoshino, Nobuya Mori

    Japanese Journal of Applied Physics Vol. 58 No. SC p. SCCD10-SCCD10 2019/06/01 Research paper (scientific journal)

    Publisher: IOP Publishing
  41. Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures

    Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Nobuyasu Naruse, Yutaka Mera, Takeshi Fujita, Md. Mahfuz Alam, Kentarou Sawano, Nobuya Mori, Yoshiaki Nakamura

    Materials Today Energy Vol. 13 p. 56-63 2019/05 Research paper (scientific journal)

  42. Nonequilibrium Green function simulation of coupled electron–phonon transport in one-dimensional nanostructures

    Y. Kajiwara, N. Mori

    Japanese Journal of Applied Physics Vol. 58 No. SD p. SDDE05-1-SDDE05-8 2019/05 Research paper (scientific journal)

  43. Intra-collisional field effect in one-dimensional GaN nanowires

    S. Makihira, N. Mori

    Japanese Journal of Applied Physics Vol. 58 No. SC p. SCCB26-1-SCCB26-6 2019/05 Research paper (scientific journal)

  44. Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled si nanostructures

    S. Sakane, T. Ishibe, T. Taniguchi, N. Naruse, Y. Mera, T. Fujita, Md. M. Alam, K. Sawano, N. Mori, Y. Nakamura

    Materials Today Energy Vol. 13 p. 56-63 2019/05 Research paper (scientific journal)

  45. Simulation of dark current characteristics of type-II InAs/GaSb superlattice mid-wavelength infrared p–i–n photodetector

    Y. Le Thi, Y. Kamakura, N. Mori

    Japanese Journal of Applied Physics Vol. 58 No. 4 p. 044002-1-044002-7 2019/03 Research paper (scientific journal)

  46. Methodology of thermoelectric power factor enhancement by controlling nanowire interface

    T. Ishibe, A. Tomeda, K. Watanabe, Y. Kamakura, N. Mori, N. Naruse, Y. Mera, Y. Yamashita, Y. Nakamura

    ACS Applied Materials & Interfaces Vol. 10 p. 37709-37716 2018/10 Research paper (scientific journal)

  47. Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

    T. Hoshino, N. Mori

    Japanese Journal of Applied Physics 2018/02 Research paper (scientific journal)

  48. Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions

    T. Kuroda, N. Mori

    Japanese Journal of Applied Physics Vol. 57 p. 04FP03-1-04FP03-6 2018/02 Research paper (scientific journal)

  49. Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence

    Ryutaro Suda, Mamiko Yagi, Akira Kojima, Nobuya Mori, Jun-ichi Shirakashi, Nobuyoshi Koshida

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 p. 44-49 2017/11 Research paper (scientific journal)

  50. Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band Monte Carlo simulation

    R. Fujita, K. Konaga, Y. Ueoka, Y. Kamakura, N. Mori, T. Kotani

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD Vol. 2017-September p. 289-292 2017/10/25 Research paper (international conference proceedings)

  51. Inter-layer coupling effects on vertical electron transport in multilayer graphene nanoribbons

    F. Hashimoto, N. Mori

    Journal of Physics: Conference Series Vol. 906 p. 012004-1-012004-4 2017/08 Research paper (scientific journal)

  52. Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots

    O. Makarovsky, L. Turyanska, N. Mori, M. Greenaway, L. Eaves, A. Patanè, M. Fromhold, S. Lara-Avila, S. Kubatkin, R. Yakimova

    2D Materials 2017/06 Research paper (scientific journal)

  53. The theoretical highest frame rate of silicon image sensors

    T. G. Etoh, A. Q. Nguyen, Y. Kamakura, K. Shimonomura, T. Y. Le, N. Mori

    Sensors 2017/02 Research paper (scientific journal)

  54. Electronic states of coupled graphene nanoribbons

    F. Hashimoto, N. Mori, O. Kubo, M. Katayama

    Japanese Journal of Applied Physics 2017/02 Research paper (scientific journal)

  55. Mobility enhancement of CVD graphene by spatially correlated charges

    L. Turyanska, O. Makarovsky, L. Eaves, A. Patane, N. Mori

    2D Materials 2017/02 Research paper (scientific journal)

  56. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    D. M. Di Paola, M. Kesaria, O. Makarovsky, A. Velichko, L. Eaves, N. Mori, A. Krier, A. Patane

    SCIENTIFIC REPORTS Vol. 6 p. 32039-1-32039-8 2016/08 Research paper (scientific journal)

  57. Random phonon model of dissipative electron transport in nanowire MOSFETs

    G. Mil'nikov, N. Mori

    Journal of Computational Electronics Vol. 15 p. 1179-1191 2016/07 Research paper (scientific journal)

  58. Reductive Deposition of Thin Cu Films Using Ballistic Hot Electrons as a Printing Beam

    R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, N. Koshida

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY Vol. 163 No. 6 p. E162-E165 2016 Research paper (scientific journal)

  59. Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors

    Masato Ichii, Ryoma Ishida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa

    IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 62 No. 4 p. 1255-1261 2015/04 Research paper (scientific journal)

  60. Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors

    Clendennen Casey, Mori Nobuya, Tsuchiya Hideaki

    JASSE Vol. 2 No. 1 p. 171-177 2015/03 Research paper (scientific journal)

    Publisher: Japan Society for Simulation Technology
  61. Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

    Suda Ryutaro, Yagi Mamiko, Kojima Akira, Mentek Romain, Mori Nobuya, Shirakashi Jun-ichi, Koshida Nobuyoshi

    Jpn. J. Appl. Phys. Vol. 54 No. 4S p. 04DH11-1-04DH11-5 2015/03 Research paper (scientific journal)

    Publisher: Institute of Physics
  62. Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

    Suda Ryutaro, Yagi Mamiko, Kojima Akira, Mentek Romain, Mori Nobuya, Shirakashi Jun-ichi, Koshida Nobuyoshi

    Jpn. J. Appl. Phys. Vol. 54 No. 4S p. 04DH11-1-04DH11-2 2015/03 Research paper (scientific journal)

    Publisher: Institute of Physics
  63. Effects of increased acoustic phonon deformation potential and surface roughness scattering on quasi-ballistic transport in ultrascaled Si-MOSFETs

    Shunsuke Koba, Ryoma Ishida, Yuko Kubota, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 No. 11 p. 114301-1-114301-8 2014/11 Research paper (scientific journal)

  64. Spectroscopic study of graphene nanoribbons formed by crystallographic etching of highly oriented pyrolytic graphite

    Yoshihiro Sugiyama, Osamu Kubo, Ryosuke Omura, Masaaki Shigehara, Hiroshi Tabata, Nobuya Mori, Mitsuhiro Katayama

    Applied Physics Letters Vol. 105 No. 12 p. 123116-1-123116-5 2014/09/22 Research paper (scientific journal)

    Publisher: American Institute of Physics Inc.
  65. Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

    A. V. Velichko, O. Makarovsky, N. Mori, L. Eaves, A. Krier, Q. Zhuang, A. Patanè

    Physical Review B - Condensed Matter and Materials Physics Vol. 90 No. 8 2014/08/20 Research paper (scientific journal)

  66. Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

    A. V. Velichko, O. Makarovsky, N. Mori, L. Eaves, A. Krier, Q. Zhuang, A. Patane

    PHYSICAL REVIEW B Vol. 90 No. 8 2014/08 Research paper (scientific journal)

  67. Electron mobility calculation for graphene on substrates

    Hideki Hirai, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa

    JOURNAL OF APPLIED PHYSICS Vol. 116 No. 8 p. 083703-1-083703-6 2014/08 Research paper (scientific journal)

  68. Ballistic hot electron effects in nanosilicon dots and their photonic applications

    N. Koshida, N. Ikegami, A. Kojima, R. Mentek, R. Suda, M. Yagi, J. Shirakashi, B. Gelloz, N. Mori

    NANOSCALE LUMINESCENT MATERIALS 3 Vol. 61 No. 5 p. 47-54 2014 Research paper (international conference proceedings)

  69. Nonequilibrium green function simulations of graphene-nanoribbon resonant-tunneling transistors

    Nobuya Mori, Takuya Edagawa, Yoshinari Kamakura, Laurence Eaves

    Japanese Journal of Applied Physics Vol. 53 No. 4 2014 Research paper (international conference proceedings)

    Publisher: Japan Society of Applied Physics
  70. Electro-Deposition of Thin Si and Ge Films Based on Ballistic Hot Electron Injection

    N. Koshida, A. Kojima, T. Ohta, R. Mentek, B. Gelloz, N. Mori, J. Shirakashi

    ECS SOLID STATE LETTERS Vol. 3 No. 5 p. P57-P60 2014 Research paper (scientific journal)

  71. Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport

    Shiro Kaneko, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa

    Applied Physics Express Vol. 7 No. 3 2014 Research paper (scientific journal)

    Publisher: Japan Society of Applied Physics
  72. Channel length scaling limits of III-V channel MOSFETs governed by source-drain direct tunneling

    Shunsuke Koba, Masaki Ohmori, Yosuke Maegawa, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa

    Japanese Journal of Applied Physics Vol. 53 No. 4 2014 Research paper (international conference proceedings)

    Publisher: Japan Society of Applied Physics
  73. Universal conductance statistics in a backscattering model: Solving the Dorokhov-Mello-Pereyra-Kumar equation with beta=1, 2, and 4

    Gennady Mil'nikov, Nobuya Mori

    PHYSICAL REVIEW B Vol. 88 No. 15 2013/10 Research paper (scientific journal)

  74. Scattering basis representation in ballistic transport simulations of nanowire transistors

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura

    MATHEMATICAL AND COMPUTER MODELLING Vol. 58 No. 1-2 p. 312-320 2013/07 Research paper (scientific journal)

  75. Increased Subthreshold Current due to Source-Drain Direct Tunneling in Ultrashort-Channel III-V Metal-Oxide-Semiconductor Field-Effect Transistors

    Shunsuke Koba, Yosuke Maegawa, Masaki Ohmori, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa

    APPLIED PHYSICS EXPRESS Vol. 6 No. 6 2013/06 Research paper (scientific journal)

  76. Analytic Circuit Model of Ballistic Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor for Transient Analysis

    Tatsuhiro Numata, Shigeyasu Uno, Yoshinari Kamakura, Nobuya Mori, Kazuo Nakazato

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 No. 4 2013/04 Research paper (scientific journal)

  77. Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array

    Nobuya Mori, Masanori Tomita, Hideki Minari, Takanobu Watanabe, Nobuyoshi Koshida

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 No. 4 2013/04 Research paper (scientific journal)

  78. Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

    Kenta Shimoida, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa

    APPLIED PHYSICS EXPRESS Vol. 6 No. 3 2013/03 Research paper (scientific journal)

  79. A Self-Consistent Compact Model of Ballistic Nanowire MOSFET With Rectangular Cross Section

    Tatsuhiro Numata, Shigeyasu Uno, Junichi Hattori, Gennady Mil'nikov, Yoshinari Kamakura, Nobuya Mori, Kazuo Nakazato

    IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 60 No. 2 p. 856-862 2013/02 Research paper (scientific journal)

  80. Random evolution approach to universal conductance statistics

    Gennady Milnikov, Nobuya Mori

    Physical Review B - Condensed Matter and Materials Physics Vol. 87 No. 3 2013/01/30 Research paper (scientific journal)

  81. Effects of Atomic Disorder on Impact Ionization Rate in Silicon Nanodots

    N. Mori, M. Tomita, H. Minar, T. Watanabe, N. Koshida

    PHYSICS OF SEMICONDUCTORS Vol. 1566 p. 381-+ 2013 Research paper (international conference proceedings)

  82. Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance

    Masashi Uematsu, Kohei M. Itoh, Gennady Mil'nikov, Hideki Minari, Nobuya Mori

    NANOSCALE RESEARCH LETTERS Vol. 7 p. 1-6 2012/12 Research paper (scientific journal)

  83. Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices

    YiKai Zhou, Mohamed Almokhtar, Hitoshi Kubo, Nobuya Mori, Shuichi Emura, Shigehiko Hasegawa, Hajime Asahi

    SOLID STATE COMMUNICATIONS Vol. 152 No. 14 p. 1270-1273 2012/07 Research paper (scientific journal)

  84. Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array

    Nobuya Mori, Hideki Minari, Shigeyasu Uno, Hiroshi Mizuta, Nobuyoshi Koshida

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 No. 4 2012/04 Research paper (scientific journal)

  85. Theory of Resonant Tunneling through a Donor State

    Nobuya Mori, Amalia Patane, Laurence Eaves

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 51 No. 2 2012/02 Research paper (scientific journal)

  86. Equivalent transport models in atomistic quantum wires

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura

    Physical Review B - Condensed Matter and Materials Physics Vol. 85 No. 3 2012/01/23 Research paper (scientific journal)

  87. Erratum: Application of the R-matrix method in quantum transport simulations: Continuous model (Journal of Computational Electronics DOI: 10.1007/s10825-011-0345-z)

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura

    Journal of Computational Electronics Vol. 10 No. 1-2 2011/06 Research paper (scientific journal)

  88. Acoustic phonon modulation and electron-phonon interaction in semiconductor slabs and nanowires

    Shigeyasu Uno, Junichi Hattori, Kazuo Nakazato, Nobuya Mori

    JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 10 No. 1-2 p. 104-120 2011/06 Research paper (scientific journal)

  89. Application of the R-matrix method in quantum transport simulations

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura

    JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 10 No. 1-2 p. 51-64 2011/06 Research paper (scientific journal)

  90. Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires

    Nobuya Mori, Hideki Minari, Shigeyasu Uno, Junichi Hattori

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 50 No. 4 2011/04 Research paper (scientific journal)

  91. Magnetophonon Resonance in Monolayer Graphene

    Nobuya Mori, Tsuneya Ando

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN Vol. 80 No. 4 p. 044706-044706 2011/04 Research paper (scientific journal)

  92. Theory of quasiballistic transport through nanocrystalline silicon dots

    Nobuya Mori, Hideki Minari, Shigeyasu Uno, Hiroshi Mizuta, Nobuyoshi Koshida

    APPLIED PHYSICS LETTERS Vol. 98 No. 6 2011/02 Research paper (scientific journal)

  93. Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance

    Hideki Minari, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Shigeyasu Uno, Nobuya Mori

    Digest of Technical Papers - Symposium on VLSI Technology p. 122-123 2011 Research paper (international conference proceedings)

  94. Application of the R-matrix method in quantum transport simulations

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura

    JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 9 No. 3-4 p. 256-261 2010/12 Research paper (scientific journal)

  95. Manipulating and Imaging the Shape of an Electronic Wave Function by Magnetotunneling Spectroscopy

    A. Patane, N. Mori, O. Makarovsky, L. Eaves, M. L. Zambrano, J. C. Arce, L. Dickinson, D. K. Maude

    PHYSICAL REVIEW LETTERS Vol. 105 No. 23 2010/12 Research paper (scientific journal)

  96. Universality in electron-modulated-acoustic-phonon interactions in a free-standing semiconductor nanowire

    Junichi Hattori, Shigeyasu Uno, Nobuya Mori, Kazuo Nakazato

    MATHEMATICAL AND COMPUTER MODELLING Vol. 51 No. 7-8 p. 880-887 2010/04 Research paper (scientific journal)

  97. A computationally cost-effective interleaving method for atomistic non-equilibrium Green's function simulation

    Hideki Minari, Nobuya Mori

    MATHEMATICAL AND COMPUTER MODELLING Vol. 51 No. 7-8 p. 888-892 2010/04 Research paper (scientific journal)

  98. Form factor increase and its physical origins in electron-modulated acoustic phonon interaction in a free-standing semiconductor plate

    Shigeyasu Uno, Junichi Hattori, Kazuo Nakazato, Nobuya Mori

    MATHEMATICAL AND COMPUTER MODELLING Vol. 51 No. 7-8 p. 863-872 2010/04 Research paper (scientific journal)

  99. Scaling consideration and compact model of electron scattering enhancement due to acoustic phonon modulation in an ultrafine free-standing cylindrical semiconductor nanowire

    Junichi Hattori, Shigeyasu Uno, Kazuo Nakazato, Nobuya Mori

    JOURNAL OF APPLIED PHYSICS Vol. 107 No. 3 2010/02 Research paper (scientific journal)

  100. Impact of Attractive Ion in Undoped Channel on Characteristics of Nanoscale Multigate Field Effect Transistors: A Three-Dimensional Nonequilibrium Green's Function Study

    Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori, Kenji Taniguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)

  101. Analytical Compact Model of Ballistic Cylindrical Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor

    Tatsuhiro Numata, Shigeyasu Uno, Kazuo Nakazato, Yoshinari Kamakura, Nobuya Mori

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)

  102. Electron-Modulated-Acoustic-Phonon Interactions in a Coated Silicon Nanowire

    Junichi Hattori, Shigeyasu Uno, Nobuya Mori, Kazuo Nakazato

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)

  103. Impact of Interface Roughness on Threshold-Voltage Variation in Ultrasmall Gate-All-Around and Double-Gate Field-Effect Transistors

    Nobuya Mori, Hideki Minari

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)

  104. Hole Transport Mechanism in Silicon and Germanium Nanowire Field Effect Transistors

    Hideki Minari, Nobuya Mori

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 49 No. 4 2010 Research paper (scientific journal)

  105. R-matrix method for quantum transport simulations in discrete systems

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura

    PHYSICAL REVIEW B Vol. 79 No. 23 2009/06 Research paper (scientific journal)

  106. Sum rules and universality in electron-modulated acoustic phonon interaction in a free-standing semiconductor plate

    Shigeyasu Uno, Darryl Yong, Nobuya Mori

    PHYSICAL REVIEW B Vol. 79 No. 23 2009/06 Research paper (scientific journal)

  107. Dopant-Induced Intrinsic Bistability in a Biased Nanowire

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki

    PHYSICAL REVIEW LETTERS Vol. 102 No. 3 2009/01 Research paper (scientific journal)

  108. Solution of the Poisson Equation with Coulomb Singularities

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 47 No. 10 p. 7765-7770 2008/10 Research paper (scientific journal)

  109. Atomistic modeling of hole transport in ultra-thin body SOI pMOSFETs

    Hideki Minari, Nobuya Mori

    JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 7 No. 3 p. 293-296 2008/09 Research paper (scientific journal)

  110. Effects of phonon scattering on electron transport in double-gate MOSFETs

    Nobuya Mori, Hiroshi Takeda, Hideki Minari

    JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 7 No. 3 p. 268-271 2008/09 Research paper (scientific journal)

  111. R-matrix theory of quantum transport and recursive propagation method for device simulations

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki

    JOURNAL OF APPLIED PHYSICS Vol. 104 No. 4 2008/08 Research paper (scientific journal)

  112. R-matrix theory of quantum transport in nanoscale electronic devices

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki

    APPLIED PHYSICS EXPRESS Vol. 1 No. 6 2008/06 Research paper (scientific journal)

  113. Impact of strain on ballistic current in Si n-i-n structures

    Hideki Minari, Nobuya Mori

    JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 47 No. 4 p. 2621-2623 2008/04 Research paper (scientific journal)

  114. Phonon scattering of hot electrons in intense mid-infrared laser fields

    H. Furuse, N. Mori, H. Kubo, H. Momose, M. Kondow

    Physica Status Solidi (C) Current Topics in Solid State Physics Vol. 5 No. 1 p. 286-289 2008 Research paper (international conference proceedings)

  115. Resonant tunneling through a dilute nitride quantum well

    N. Mori, G. Allison, A. Patane, L. Eaves

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 Vol. 5 No. 1 p. 198-+ 2008 Research paper (international conference proceedings)

  116. Magnetic-field-induced miniband conduction in semiconductor superlattices

    Daivid Fowler, David P. A. Hardwick, Amalia Patane, Mark T. Greenaway, Alexander G. Balanov, Timothy M. Fromhold, Laurence Eaves, Mohamed Henini, Nadezda Kozlova, Jens Freudenberger, Nobuya Mori

    PHYSICAL REVIEW B Vol. 76 No. 24 2007/12 Research paper (scientific journal)

  117. Analytical description of intravalley acoustic phonon limited electron mobility in ultrathin si plate incorporating phonon modulation due to plate interfaces

    Shigeyasu Uno, Nobuya Mori

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS Vol. 46 No. 36-40 p. L923-L926 2007/10 Research paper (scientific journal)

  118. Transmission study of germanium using free-electron laser

    H. Furuse, N. Mori, H. Kubo, H. Momose, M. Kondow

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Vol. 18 p. S81-S85 2007/10 Research paper (scientific journal)

  119. Numerical simulation of hole transport in silicon nanostructures

    Hideki Minari, Nobuya Mori

    JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 6 No. 1-3 p. 223-225 2007/09 Research paper (scientific journal)

  120. Implementation of the Bloch operator method for solving the Poisson equation

    Gennady V. Mil'Nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezakil

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 46 No. 9A p. 5734-5737 2007/09 Research paper (scientific journal)

  121. Measurement of the temperature dependence of midinfrared optical absorption spectra of germanium in intense laser fields

    H. Furuse, N. Mori, H. Kubo, H. Momose, M. Kondow

    PHYSICAL REVIEW B Vol. 75 No. 20 2007/05 Research paper (scientific journal)

  122. Effects of strained layers on Zener tunneling in silicon nanostructures

    Hideki Minari, Nobuya Mori

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 46 No. 4B p. 2076-2078 2007/04 Research paper (scientific journal)

  123. Midinfrared optical absorption in germanium measured with a free-electron laser at room temperature

    H. Furuse, N. Mori, H. Kubo, H. Momose, M. Kondow

    PHYSICAL REVIEW B Vol. 74 No. 20 2006/11 Research paper (scientific journal)

  124. Strong effect of resonant impurities on Landau-level quantization

    G. Allison, N. Mori, A. Patane, J. Endicott, L. Eaves, D. K. Maude, M. Hopkinson

    PHYSICAL REVIEW LETTERS Vol. 96 No. 23 2006/06 Research paper (scientific journal)

  125. Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates

    H Momose, H Okai, H Deguchi, N Mori, S Takeyama

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 32 No. 1-2 p. 309-312 2006/05 Research paper (scientific journal)

  126. Periodic magnetoresistance oscillations in side-gated quantum dots

    T. Suzuki, H. Momose, M. Morifuji, N. Mori, M. Kondow

    SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES AND FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES, 2005 Vol. 38 p. 116-+ 2006 Research paper (international conference proceedings)

  127. Current flow and energy dissipation in low-dimensional semiconductor superlattices

    D Fowler, A Patane, A Ignatov, L Eaves, M Henini, N Mori, DK Maude, R Airey

    APPLIED PHYSICS LETTERS Vol. 88 No. 5 2006/01 Research paper (scientific journal)

  128. Impurity cyclotron resonance in InGaAs/AlAs superlattice under ultra high magnetic fields

    H Momose, H Deguchi, H Okai, N Mori, S Takeyama

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 29 No. 3-4 p. 606-608 2005/11 Research paper (scientific journal)

  129. Theoretical investigation of electron-phonon interaction in one-dimensional silicon quantum dot array interconnected with silicon oxide layers

    S Uno, N Mori, K Nakazato, N Koshida, H Mizuta

    PHYSICAL REVIEW B Vol. 72 No. 3 2005/07 Research paper (scientific journal)

  130. Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides

    S Uno, N Mori, K Nakazato, N Koshida, H Mizuta

    JOURNAL OF APPLIED PHYSICS Vol. 97 No. 11 2005/06 Research paper (scientific journal)

  131. Three-dimensional quantum transport simulation of ultra-small FinFETs

    H. Takeda, N. Mori

    Journal of Computational Electronics Vol. 4 No. 1-2 p. 31-34 2005/04 Research paper (scientific journal)

  132. Effective-mass theory of graphite/porous-graphite quantum wires

    H Takeda, N Mori, K Yoshino

    JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 38 No. 8 p. 1205-1210 2005/04 Research paper (scientific journal)

  133. Mode-coupling effects in non-equilibrium Green's function device simulation

    H Takeda, N Mori

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS Vol. 44 No. 4B p. 2664-2668 2005/04 Research paper (scientific journal)

  134. Electron-phonon interaction in si quantum dots interconnected with thin oxide layers

    S Uno, N Mori, K Nakazato, N Koshida, H Mizuta

    Physics of Semiconductors, Pts A and B Vol. 772 p. 797-798 2005 Research paper (international conference proceedings)

  135. Resonant transport in semiconductor superlattices in a tilted magnetic field

    N Mori, C Hamaguchi, A Patane, TM Fromhold, L Eaves

    INTERNATIONAL JOURNAL OF MODERN PHYSICS B Vol. 18 No. 27-29 p. 3617-3620 2004/11 Research paper (scientific journal)

  136. Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors

    M. Okamoto, N. Mori

    JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 3 No. 3-4 p. 439-442 2004/10 Research paper (scientific journal)

  137. Magnetic-field-induced suppression of electronic conduction in a superlattice

    A Patane, N Mori, D Fowler, L Eaves, M Henini, DK Maude, C Hamaguchi, R Airey

    PHYSICAL REVIEW LETTERS Vol. 93 No. 14 2004/10 Research paper (scientific journal)

  138. Study of electron dynamics in n-type GaN using the Osaka free electron laser

    T Takahashi, T Kambayashi, H Kubo, N Mori, N Tsubouchi, L Eaves, CT Foxon

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT Vol. 528 No. 1-2 p. 623-626 2004/08 Research paper (scientific journal)

  139. Full-band Monte Carlo study on free electron laser induced impact ionization in wurtzite GaN

    T Takahashi, N Mori

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 19 No. 4 p. S457-S459 2004/04 Research paper (scientific journal)

  140. Monte Carlo study of two-dimensional hole transport in a GaAs quantum well

    N Mori, H Takeda

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 19 No. 4 p. S17-S19 2004/04 Research paper (scientific journal)

  141. Nonequilibrium Green's function approach to resonant transport in semiconductor superlattices

    N Mori, A Patane, L Eaves

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 21 No. 2-4 p. 717-721 2004/03 Research paper (scientific journal)

  142. Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs

    H. Takeda, N. Mori, C. Hamaguchi

    JOURNAL OF COMPUTATIONAL ELECTRONICS Vol. 2 No. 2-4 p. 119-122 2003/12 Research paper (scientific journal)

  143. Electron transport in quantum dot arrays: self-consistent modeling

    M Kobayashi, S Miyahara, N Mori, C Hamaguchi

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 19 No. 1-2 p. 188-191 2003/07 Research paper (scientific journal)

  144. Magneto-tunneling spectroscopy of quantum structures

    N Mori, C Hamaguchi, A Patane, L Eaves, PC Main

    MICROELECTRONIC ENGINEERING Vol. 63 No. 1-3 p. 109-114 2002/08 Research paper (scientific journal)

  145. Temperature dependence of the conductance in quasi-one-dimensional superlattices

    N Mori, C Hamaguchi, L Eaves, PC Main

    MICROELECTRONIC ENGINEERING Vol. 63 No. 1-3 p. 87-90 2002/08 Research paper (scientific journal)

  146. Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy

    A Patane, RJA Hill, L Eaves, PC Main, M Henini, ML Zambrano, A Levin, N Mori, C Hamaguchi, YV Dubrovskii, EE Vdovin, DG Austing, S Tarucha, G Hill

    PHYSICAL REVIEW B Vol. 65 No. 16 2002/04 Research paper (scientific journal)

  147. Transport in quantum dot arrays

    N Mori, T Ishida, Y Takamura, C Hamaguchi

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 13 No. 2-4 p. 667-670 2002/03 Research paper (scientific journal)

  148. Study of electron-hole generation and recombination in semiconductors using the Osaka free electron laser

    N Mori, T Takahashi, T Kambayashi, H Kubo, C Hamaguchi, L Eaves, CT Foxon, A Patane, M Henini

    PHYSICA B-CONDENSED MATTER Vol. 314 No. 1-4 p. 431-436 2002/03 Research paper (scientific journal)

  149. Self-consistent calculation of two-dimensional electronic states in SOI-MOSFETs using full-band modeling

    H Takeda, N Mori, C Hamaguchi

    PHYSICA B-CONDENSED MATTER Vol. 314 No. 1-4 p. 377-380 2002/03 Research paper (scientific journal)

  150. Luminescence from p-type GaAs crystals under intense mid-infrared irradiation

    T Takahashi, T Kambayashi, N Mori, H Kubo, C Hamaguchi, N Tsubouchi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 41 No. 1 p. 88-89 2002/02 Research paper (scientific journal)

  151. Study of electron transport in SOI MOSFETs using Monte Carlo technique with full-band modeling

    Journal of Computational Electronics Vol. Vol. 1, pp. 467-474/, 2002

  152. Full-band {Monte Carlo} simulation of two-dimensional electron gas in SOI MOSFETs

    Journal of Computational Electronics Vol. Vol. 1, pp. 219-222/, 2002

  153. Monte Carlo simulation of miniband conduction in Landau-quantized superlattices

    N Mori, C Hamaguchi, L Eaves, PC Main

    PHYSICA B Vol. 298 No. 1-4 p. 329-332 2001/04 Research paper (scientific journal)

  154. Reduction of electron decay time using disordered tunnel barrier

    JH Park, S Senzaki, N Mori, C Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 40 No. 3B p. 1970-1972 2001/03 Research paper (scientific journal)

  155. Numerical studies of miniband conduction in quasi-one-dimensional superlattices

    N Mori, C Hamaguchi, L Eaves, PC Main

    VLSI DESIGN Vol. 13 No. 1-4 p. 45-50 2001 Research paper (scientific journal)

  156. Conductance fluctuations in a double-barrier resonant tunneling device

    PC Main, TJ Foster, P McDonnell, L Eaves, MJ Gompertz, N Mori, JW Sakai, A Henini, G Hill

    PHYSICAL REVIEW B Vol. 62 No. 24 p. 16721-16726 2000/12 Research paper (scientific journal)

  157. Reduction in relaxation time due to ionized impurities in GaAs/AlGaAs quantum well structures

    JH Park, S Senzaki, N Mori, C Hamaguchi

    SUPERLATTICES AND MICROSTRUCTURES Vol. 27 No. 5-6 p. 505-508 2000/05 Research paper (scientific journal)

  158. Cyclotron masses in InGaAs/GaAs superlattices and InGaAs/AlAs superlattices

    H Momose, S Uehara, N Mori, C Hamaguchi, H Arimoto, T Ikaida, N Miura

    SUPERLATTICES AND MICROSTRUCTURES Vol. 27 No. 5-6 p. 525-528 2000/05 Research paper (scientific journal)

  159. Luminescence from GaAs/AlGaAs quantum wells induced by mid-infrared free electron laser pulses

    H Nakano, H Kubo, N Mori, C Hamaguchi, L Eaves

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 7 No. 3-4 p. 555-558 2000/05 Research paper (scientific journal)

  160. Conductance fluctuations in a double-barrier resonant tunneling device

    Physical Review B Vol. 62 No. 24 p. 16721-16726 2000

  161. Monte Carlo simulation of conductance characteristics in SOI-MOSFET

    S Araya, K Yamasaki, H Ueno, N Mori, C Hamaguchi, LM Perron, AL Lacaita

    PHYSICA B Vol. 272 No. 1-4 p. 565-567 1999/12 Research paper (scientific journal)

  162. Monte Carlo study on electron motion under mid-infrared free-electron-laser pulses

    N Mori, H Nakano, H Kubo, C Hamaguchi, L Eaves

    PHYSICA B-CONDENSED MATTER Vol. 272 No. 1-4 p. 431-433 1999/12 Research paper (scientific journal)

  163. Magnetic field quenching of miniband conduction in quasi-one-dimensional superlattices

    L Eaves, HM Murphy, A Nogaret, ST Stoddart, PC Main, M Henini, N Mori, C Hamaguchi, DK Maude, JC Portal

    PHYSICA B Vol. 272 No. 1-4 p. 190-193 1999/12 Research paper (scientific journal)

  164. Cyclotron resonance in (GaAs)(n)/(AlAs)(n) superlattices under ultra-high magnetic-fields

    H Momose, N Mori, C Hamaguchi, T Ikaida, H Arimoto, N Miura

    PHYSICA E Vol. 4 No. 4 p. 286-291 1999/10 Research paper (scientific journal)

  165. Impurity cyclotron resonance in type-I (GaAs)(n)/(AlAs)(n) superlattices

    H Momose, N Mori, C Hamaguchi, T Ikaida, H Arimoto, N Miura

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Vol. 64 No. 2 p. 137-141 1999/09 Research paper (scientific journal)

  166. Conductance through zigzag quantum dots arrays

    H Ueno, K Moriyasu, Y Wada, S Osako, H Kubo, N Mori, C Hamaguchi

    MICROELECTRONIC ENGINEERING Vol. 47 No. 1-4 p. 127-129 1999/06 Research paper (scientific journal)

  167. New developments in superlattice transport: quenching of miniband conduction in high magnetic fields

    HM Murphy, L Eaves, A Nogaret, ST Stoddart, PC Main, M Henini, N Mori, C Hamaguchi, DK Maude, JC Portal

    MICROELECTRONIC ENGINEERING Vol. 47 No. 1-4 p. 65-68 1999/06 Research paper (scientific journal)

  168. Monte Carlo simulation of one- and two-dimensional electron gases

    K Yamasaki, T Ezaki, N Mori, C Hamaguchi

    COMPOUND SEMICONDUCTORS 1998 No. 162 p. 313-318 1999 Research paper (scientific journal)

  169. Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells

    JH Park, S Ozaki, N Mori, C Hamaguchi

    SUPERLATTICES AND MICROSTRUCTURES Vol. 25 No. 1-2 p. 445-451 1999/01 Research paper (scientific journal)

  170. Conductance through laterally coupled quantum dots

    H Ueno, K Moriyasu, Y Wada, S Osako, H Kubo, N Mori, C Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 38 No. 1B p. 332-335 1999/01 Research paper (scientific journal)

  171. A study of miniband conduction in Wannier-Stark superlattices at high magnetic fields

    HM Murphy, A Nogaret, ST Stoddart, L Eaves, PC Main, M Henini, DK Maude, N Mori, JC Portal, C Hamaguchi

    PHYSICA B-CONDENSED MATTER Vol. 256 p. 544-547 1998/12 Research paper (scientific journal)

  172. Luminescence of GaAs/AlGaAs asymmetric double-quantum-wells excited by a mid-IR free electron laser

    H Nakano, JM Feng, H Kubo, N Mori, C Hamaguchi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS Vol. 144 No. 1-4 p. 160-165 1998/09 Research paper (scientific journal)

  173. Electronic properties in quantum dots with asymmetric confining potential

    T Ezaki, Y Sugimoto, N Mori, C Hamaguchi

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 13 No. 8A p. A1-A3 1998/08 Research paper (scientific journal)

  174. Magnetophonon and magneto-intersubband-scattering effects in InAs/AlGaSb heterostructures

    S Osako, T Hamano, N Mori, C Hamaguchi, S Sasa, M Inoue

    PHYSICA B-CONDENSED MATTER Vol. 249 p. 740-744 1998/06 Research paper (scientific journal)

  175. Electronic structures in a quantum dot with asymmetric confining potential

    T Ezaki, Y Sugimoto, N Mori, C Hamaguchi

    PHYSICA B-CONDENSED MATTER Vol. 249 p. 238-242 1998/06 Research paper (scientific journal)

  176. Combined oscillations of magnetoresistance due to inelastic and elastic scatterings in InAs/AlGaSb quantum well structures

    S Osako, T Hamano, K Yamasaki, K Moriyasu, N Mori, C Hamaguchi, S Sasa, M Inoue

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 13 No. 2 p. 181-184 1998/02 Research paper (scientific journal)

  177. Electronic states in quantum dots: Effects of symmetry of the confining potential

    T Ezaki, Y Sugimoto, N Mori, C Hamaguchi

    COMPOUND SEMICONDUCTORS 1997 Vol. 156 p. 543-546 1998 Research paper (scientific journal)

  178. Electronic states in quantum dots: Effects of symmetry of the confining potential

    T Ezaki, Y Sugimoto, N Mori, C Hamaguchi

    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS p. 543-546 1998 Research paper (international conference proceedings)

  179. Electron-LA phonon interaction in a quantum dot

    T. Ezaki, N. Mori, C. Hamaguchi

    VLSI Design Vol. 8 No. 1-4 p. 225-230 1998 Research paper (scientific journal)

    Publisher: Taylor and Francis Inc.
  180. Observation of resonant optical-phonon assisted tunneling in asymmetric double quantum wells

    S Ozaki, JM Feng, JH Park, S Osako, H Kubo, M Morifuji, N Mori, C Hamaguchi

    JOURNAL OF APPLIED PHYSICS Vol. 83 No. 2 p. 962-965 1998/01 Research paper (scientific journal)

  181. Optical-phonon assisted tunneling in an asymmetric double-quantum-well structure

    JM Feng, S Ozaki, JH Park, H Kubo, N Mori, C Hamaguchi

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH Vol. 204 No. 1 p. 412-415 1997/11 Research paper (scientific journal)

  182. Energy relaxation time of electrons in quantum dots

    T Ezaki, N Mori, C Hamaguchi

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH Vol. 204 No. 1 p. 272-274 1997/11 Research paper (scientific journal)

  183. Self-consistent approximation for electron-optical-phonon interaction in a quantum wire

    N Mori, H Momose, C Hamaguchi

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH Vol. 204 No. 1 p. 268-271 1997/11 Research paper (scientific journal)

  184. Resonant optical-phonon assisted tunnelling in an asymmetric double-quantum-well structure

    JM Feng, JH Park, S Ozaki, H Kubo, N Mori, C Hamaguchi

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 12 No. 9 p. 1116-1120 1997/09 Research paper (scientific journal)

  185. Effect of quantum confinement and lattice relaxation on electronic states in GaAs/In0.2Ga0.8As/GaAs quantum dots

    K Moriyasu, S Osako, N Mori, C Hamaguchi

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 36 No. 6B p. 3932-3935 1997/06 Research paper (scientific journal)

  186. Magnetotransport of low dimensional electron gas in InAs/AlGaSb heterostructures

    Takafumi Hamano, Katsuji Moriyasu, Shin-Ichi Osako, Nobuya Mori, Chihiro Hamaguchi, Shigehiko Sasa, Masataka Inoue

    Technology Reports of the Osaka University Vol. 47 No. 2267-2282 p. 61-69 1997/04/15 Research paper (scientific journal)

  187. Electronic structures in circular, elliptic, and triangular quantum dots

    T. Ezaki, N. Mori, C. Hamaguchi

    Physical Review B - Condensed Matter and Materials Physics Vol. 56 No. 11 p. 6428-6431 1997 Research paper (scientific journal)

  188. Low-dimensional systems in ultra-high magnetic fields: Magnetic-field-induced type I to type II transitions in short-period semiconductor superlattices

    N Miura, Y Shimamoto, Y Imanaka, H Arimoto, H Nojiri, H Kunimatsu, K Uchida, T Fukuda, K Yamanaka, H Momose, N Mori, C Hamaguchi

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 11 No. 11 p. 1586-1590 1996/11 Research paper (scientific journal)

  189. Angular dependent cyclotron resonance in short period (GaAs)(n)/(AlAs)(n) superlattices

    K Yamanaka, H Momose, N Mori, C Hamaguchi, H Arimoto, Y Imanaka, Y Shimamoto, N Miura

    PHYSICA B Vol. 227 No. 1-4 p. 356-359 1996/09 Research paper (scientific journal)

  190. D- centers probed by resonant tunneling spectroscopy

    JGS Lok, AK Geim, JC Maan, Marmorkos, I, FM Peeters, N Mori, L Eaves, TJ Foster, PC Main, JW Sakai, M Henini

    PHYSICAL REVIEW B Vol. 53 No. 15 p. 9554-9557 1996/04 Research paper (scientific journal)

  191. Mesoscopic conductance fluctuations in impurity-assisted resonant tunnelling

    P McDonnell, TJ Foster, PC Main, L Eaves, N Mori, JW Sakai, M Henini, G Hill

    SOLID-STATE ELECTRONICS Vol. 40 No. 1-8 p. 409-412 1996 Research paper (scientific journal)

  192. Cyclotron resonance in short period (GaAs)(n)/(A1As)(n) superlattices

    T Fukuda, K Yamanaka, H Momose, N Mori, C Hamaguchi, Y Imanaka, Y Shimamoto, N Miura

    SURFACE SCIENCE Vol. 361 No. 1-3 p. 406-410 1996 Research paper (scientific journal)

  193. Resonant tunnelling through D- states

    JGS Lok, AK Geim, JC Maan, Marmorkos, I, FM Peeters, N Mori, L Eaves, P McDonnell, M Henini, JW Sakai, PC Main

    SURFACE SCIENCE Vol. 361 No. 1-3 p. 247-250 1996 Research paper (scientific journal)

  194. D-centers probed by resonant tunneling spectroscopy

    Physical Review B Vol. 53 No. 15 p. 9554-9557 1996

  195. A novel approach in fabrication and study of laterally quantum-confined resonant tunnelling diodes

    JN Wang, PH Beton, N Mori, L Eaves, PC Main, TJ Foster, M Henini

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Vol. 35 No. 1-3 p. 192-197 1995/12 Research paper (scientific journal)

  196. MEASURING THE PROBABILITY DENSITY OF QUANTUM-CONFINED STATES

    PH BETON, J WANG, N MORI, L EAVES, PC MAIN, TJ FOSTER, M HENINI

    PHYSICAL REVIEW LETTERS Vol. 75 No. 10 p. 1996-1999 1995/09 Research paper (scientific journal)

  197. LANDAU-LEVEL POPULATIONS AND SLOW ENERGY RELAXATION OF A 2-DIMENSIONAL ELECTRON-GAS PROBED BY TUNNELING SPECTROSCOPY

    BRA NEVES, N MORI, PH BETON, L EAVES, J WANG, M HENINI

    PHYSICAL REVIEW B Vol. 52 No. 7 p. 4666-4669 1995/08

  198. EFFECT OF A PARALLEL MAGNETIC-FIELD ON THE RESONANT-TUNNELING CURRENT THROUGH A QUANTUM-WIRE

    N MORI, PH BETON, J WANG, L EAVES

    PHYSICAL REVIEW B Vol. 52 No. 3 p. 1504-1507 1995/07

  199. RESONANT MAGNETOTUNNELING VIA QUANTUM-CONFINED STATES

    PH BETON, J WANG, N MORI, L EAVES, H BUHMANN, L MANSOURI, PC MAIN, TJ FOSTER, M HENINI

    PHYSICA B Vol. 211 No. 1-4 p. 423-429 1995/05 Research paper (scientific journal)

  200. ELECTRON-CONCENTRATION-DEPENDENT QUANTUM-WELL LUMINESCENCE - EVIDENCE FOR A NEGATIVELY CHARGED EXCITON

    H BUHMANN, L MANSOURI, J WANG, PH BETON, N MORI, L EAVES, M HENINI, M POTEMSKI

    PHYSICAL REVIEW B Vol. 51 No. 12 p. 7969-7972 1995/03

  201. THEORY OF RESONANT-TUNNELING THROUGH A QUANTUM-WIRE

    N MORI, PH BETON, J WANG, L EAVES

    PHYSICAL REVIEW B Vol. 51 No. 3 p. 1735-1742 1995/01 Research paper (scientific journal)

  202. RESONANT-TUNNELING QUANTUM DOTS AND WIRES - SOME RECENT PROBLEMS AND PROGRESS

    PH BETON, H BUHMANN, L EAVES, TJ FOSTER, AK GEIM, N LASCALA, PC MAIN, L MANSOURI, N MORI, JW SAKAI, J WANG

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 9 No. 11 p. 1912-1918 1994/11 Research paper (scientific journal)

  203. RESONANT-TUNNELING THROUGH DONOR MOLECULES

    AK GEIM, TJ FOSTER, A NOGARET, N MORI, PJ MCDONNELL, N LASCALA, PC MAIN, L EAVES

    PHYSICAL REVIEW B Vol. 50 No. 11 p. 8074-8077 1994/09

  204. SUBMICROMETER RESONANT-TUNNELING DIODES FABRICATED BY PHOTOLITHOGRAPHY AND SELECTIVE WET ETCHING

    J WANG, PH BETON, N MORI, H BUHMANN, L MANSOURI, L EAVES, PC MAIN, TJ FOSTER, M HENINI

    APPLIED PHYSICS LETTERS Vol. 65 No. 9 p. 1124-1126 1994/08 Research paper (scientific journal)

  205. RESONANT MAGNETOTUNNELING VIA ONE-DIMENSIONAL QUANTUM-CONFINED STATES

    J WANG, PH BETON, N MORI, L EAVES, H BUHMANN, L MANSOURI, PC MAIN, TJ FOSTER, M HENINI

    PHYSICAL REVIEW LETTERS Vol. 73 No. 8 p. 1146-1149 1994/08 Research paper (scientific journal)

  206. MAGNETOPHONON RESONANCE IN QUANTUM WIRES

    C HAMAGUCHI, N MORI, H MOMOSE, T EZAKI, G BERTHOLD, J SMOLINER, E GORNIK, G BOHM, G WEIMANN, T SUSKI, P WISNIEWSKI

    PHYSICA B Vol. 201 p. 339-344 1994/07 Research paper (scientific journal)

  207. NEW MODEL FOR MONTE-CARLO SIMULATION OF HOT-ELECTRONS IN QUANTUM WIRES

    H MOMOSE, N MORI, K TANIGUCHI, C HAMAGUCHI

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 9 No. 5 p. 958-960 1994/05 Research paper (scientific journal)

  208. HOT-ELECTRON TRANSPORT IN QUANTUM STRUCTURES

    N MORI, C HAMAGUCHI

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 9 No. 5 p. 941-945 1994/05 Research paper (scientific journal)

  209. GAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS

    T MIYATAKE, S HORIHATA, T EZAKI, H KUBO, N MORI, K TANIGUCHI, C HAMAGUCHI

    SOLID-STATE ELECTRONICS Vol. 37 No. 4-6 p. 1187-1190 1994/04 Research paper (scientific journal)

  210. MAGNETOPHONON RESONANCES IN QUANTUM WIRES

    G BERTHOLD, J SMOLINER, E GORNIK, G BOHM, G WEIMANN, T SUSKI, P WISNIEWSKI, C HAMAGUCHI, N MORI, H MOMOSE

    SURFACE SCIENCE Vol. 305 No. 1-3 p. 637-642 1994/03 Research paper (scientific journal)

  211. Resonant tunnelling through donor molecules

    Phsical Review B Vol. 50 No. 11 p. 8074-8077 1994

  212. MAGNETOPHONON RESONANCES IN QUANTUM WIRES

    G BERTHOLD, J SMOLINER, C WIRNER, E GORNIK, G BOHM, G WEIMANN, M HAUSER, C HAMAGUCHI, N MORI, H MOMOSE

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 8 No. 5 p. 735-738 1993/05

  213. ELECTRON-TUNNELING IN GAAS/ALGAAS/GAAS SINGLE-BARRIER HETEROJUNCTION DIODES - ELECTRON PHONON INTERACTION EFFECTS

    N MORI, C HAMAGUCHI

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 8 No. 2 p. 197-205 1993/02 Research paper (scientific journal)

  214. EFFECTS OF ELECTRON INTERFACE-PHONON INTERACTION ON RESONANT TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES

    N MORI, K TANIGUCHI, C HAMAGUCHI

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 7 No. 3B p. B83-B87 1992/03 Research paper (scientific journal)

  215. MAGNETOPHONON RESONANCES IN QUANTUM WIRES

    N MORI, H MOMOSE, C HAMAGUCHI

    PHYSICAL REVIEW B Vol. 45 No. 8 p. 4536-4539 1992/02

  216. MAGNETOPHONON RESONANCES IN QUANTUM WIRES

    N MORI, H MOMOSE, C HAMAGUCHI

    INSTITUTE OF PHYSICS CONFERENCE SERIES No. 127 p. 55-58 1992 Research paper (scientific journal)

  217. MAGNETOPHONON RESONANCES IN QUANTUM WIRES

    N MORI, H MOMOSE, C HAMAGUCHI

    QUANTUM EFFECT PHYSICS, ELECTRONICS AND APPLICATIONS Vol. 127 p. 55-58 1992 Research paper (international conference proceedings)

  218. MAGNETOPHONON RESONANCE IN SEMICONDUCTORS

    C HAMAGUCHI, N MORI

    PHYSICA B Vol. 164 No. 1-2 p. 85-96 1990/06 Research paper (scientific journal)

  219. ELECTRON OPTICAL-PHONON INTERACTION IN SINGLE AND DOUBLE HETEROSTRUCTURES

    N MORI, T ANDO

    PHYSICAL REVIEW B Vol. 40 No. 9 p. 6175-6188 1989/09 Research paper (scientific journal)

  220. MAGNETOPHONON-RESONANCE THEORY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN ALXGA1-XAS/GAAS SINGLE HETEROSTRUCTURES

    N MORI, H MURATA, K TANIGUCHI, C HAMAGUCHI

    PHYSICAL REVIEW B Vol. 38 No. 11 p. 7622-7634 1988/10 Research paper (scientific journal)

  221. ELECTRIC FIELD-INDUCED MAGNETOPHONON RESONANCE

    N MORI, N NAKAMURA, K TANIGUCHI, C HAMAGUCHI

    SOLID-STATE ELECTRONICS Vol. 31 No. 3-4 p. 777-780 1988/03 Research paper (scientific journal)

  222. MAGNETOPHONON RESONANCE OF A TWO-DIMENSIONAL ELECTRON-GAS IN A QUANTUM WELL

    N MORI, K TANIGUCHI, C HAMAGUCHI, S SASA, S HIYAMIZU

    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS Vol. 21 No. 9 p. 1791-1805 1988/03 Research paper (scientific journal)

  223. MAGNETOPHONON RESONANCE AT HIGH ELECTRIC AND MAGNETIC-FIELDS IN SMALL N+NN+ GAAS STRUCTURES

    N MORI, N NAKAMURA, K TANIGUCHI, C HAMAGUCHI

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN Vol. 57 No. 1 p. 205-216 1988/01 Research paper (scientific journal)

  224. MAGNETOPHONON RESONANCE IN CROSSED HIGH ELECTRIC AND MAGNETIC-FIELDS IN SMALL N+NN+ GAAS STRUCTURES

    N MORI, N NAKAMURA, K TANIGUCHI, C HAMAGUCHI

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 2 No. 8 p. 542-546 1987/08

Misc. 24

  1. SiGeナノ構造バルクにおける熱分布を利用した熱電出力因子の増大

    坂根駿也, 石部貴史, 藤田武志, 池内賢朗, 鎌倉良成, 森伸也, 中村芳明

    応用物理学会春季学術講演会講演予稿集(CD-ROM) Vol. 66th 2019/02/25

  2. Invited Talk : Modeling of Electron Transport in 4H-SiC MOS Inversion Layers

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 Vol. 118 No. 291 p. 35-40 2018/11/08

    Publisher: 電子情報通信学会
  3. Au添加SiGeバルク熱電材料の構造とその高出力因子

    坂根駿也, 柏野真人, 渡辺健太郎, 鎌倉良成, 鎌倉良成, 森伸也, 森伸也, 藤田武志, 藤田武志, 中村芳明, 中村芳明

    応用物理学会秋季学術講演会講演予稿集(CD-ROM) Vol. 79th 2018/09/05

  4. 集積量子デバイス領域

    森 伸也

    Techno net : 大阪大学工業会誌 No. 569 p. 3-6 2015/07

    Publisher: 大阪大学工業会
  5. Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method

    TSUCHIYA Hideaki, ISHIDA Ryoma, KAMAKURA Yoshinari, MORI Nobuya, UNO Shigeyasu, OGAWA Matsuto

    Technical report of IEICE. SDM Vol. 114 No. 291 p. 53-58 2014/11/06

    Publisher: The Institute of Electronics, Information and Communication Engineers
  6. Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach

    Ohmori Masaki, Koba Shunsuke, Maegawa Yosuke, Tsuchiya Hideaki, Kamakura Yoshinari, Mori Nobuya, Ogawa Matsuto

    Technical report of IEICE. SDM Vol. 113 No. 296 p. 65-70 2013/11/14

    Publisher: The Institute of Electronics, Information and Communication Engineers
  7. Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors

    Nobuya Mori, Yoshinari Kamakura, Genaddy Mil'nikov, Hideki Minari

    TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS Vol. 470 p. 218-223 2011

  8. Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices

    Yoshinari Kamakura, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi

    TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS Vol. 470 p. 14-+ 2011

  9. Numerical Simulation of Electron Motion in Graphene with Vacancies

    2010

  10. Modulated Phonon Scattering in Graphene Nano-ribbons

    2010

  11. ナノシリコンの最新技術と応用展開

    シーエムシー出版 2010

  12. Discrete dopant effects on threshold voltage variation in double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors

    2010

  13. Impact of self-heating effect on the electrical characteristics of nanoscale devices

    2010

  14. Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires

    2010

  15. Simplified Method of Electron Subband Profile Calculation in Ballistic Gate-All-Around MOSFET

    2010

  16. Developing nanosilicon technologgy and device applications

    2010

  17. Quantum transport simulation for next-generation metal-oxide-semiconductor devices

    MORI Nobuya, MINARI Hideki

    Vol. Vol. 78, No. 6, pp. 540-54 No. 6 p. 540-543 2009

    Publisher: 応用物理学会
  18. Coarse-Grain 3D Quantum Simulations of Nanoscale MOSFET

    MIL'NIKOV Gennady, MORI Nobuya, KAMAKURA Yoshinari, EZAKI Tatsuya

    Vol. 2007 p. 50-51 2007/09/19

  19. 21pTG-10 Study of Γ-X crossover in InGaAs/AlAs superlattice using cyclotron resonance under megagauss field

    Momose H., Okai H., Morifuji M., Mori N., Kondow M., Takeyama S.

    Meeting abstracts of the Physical Society of Japan Vol. 62 No. 2 p. 682-682 2007/08/21

    Publisher: The Physical Society of Japan (JPS)
  20. Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot Array Interconnected with Thin Oxide Layers

    UNO Shigeyasu, MORI Nobuya, NAKAZATO Kazuo, KOSHIDA Nobuyoshi, MIZUTA Hiroshi

    Vol. 2004 p. 116-117 2004/09/15

  21. 強磁場中における半導体超格子のワニエ・シュタルク効果

    森 伸也, 浜口 智尋

    固体物理 Vol. 34 No. 5 p. 351-358 1999

    Publisher: アグネ技術センタ-
  22. Cyclotron Resonance in (InGaAs)_n/(GaAs)_n Superlattices

    TANI H., MOMOSE H., MORI N., HAMAGUCHI C., IKAIDA T., ARUMOTO H., MIURA N.

    Meeting abstracts of the Physical Society of Japan Vol. 53 No. 2 p. 184-184 1998/09/05

    Publisher: The Physical Society of Japan (JPS)
  23. 量子細線における磁気フォノン共鳴

    浜口 智尋, 百瀬 英毅, 江崎 達也, 森 伸也, エザキ タツヤ, ハマグチ チヒロ, モリ ノブヤ, モモセ ヒデキ

    大阪大学低温センターだより Vol. 89 p. 15-20 1995/01

    Publisher: 大阪大学低温センター
  24. 28p-C-12 Magnetophonon Resonances in Quantum Wires

    Momose H., Mori N., Taniguchi K., Hamaguchi C.

    Vol. 46 No. 2 p. 142-142 1991/09/12

    Publisher: The Physical Society of Japan (JPS)

Publications 6

  1. 電子物性 ─電子デバイスの基礎─

    浜口智尋, 森伸也

    朝倉書店 2014/03 Textbook, survey, introduction

    ISBN: 9784254221602

  2. Nonequilibrium Green's function method applied to Landau-quantized superlattices

    Institute of Physics Conference Series 2002

  3. Cyclotron resonance in InGaAs/AlAs superlattices under pulsed high magnetic fields

    Institute of Physics Conference Series 2002

  4. Phonon cycling in GaAs/AlAs superlattices

    Institute of Physics Conference Series 2002

  5. メゾスコピック現象の基礎:表面超格子

    オーム社 1994

  6. Basic Pheomena of Mesoscopic Structures : Lateral Superlattices

    1994

Presentations 80

  1. 直接遷移型半導体におけるバンド間トンネルシミュレーションの高速化

    岡田 丈, 橋本 風渡, 森 伸也

    応用物理学会春季学術講演会 2021/03/16

  2. ゲルマニウムにおけるバンド間トンネル電流のNEGFシミュレーション

    橋本 風渡, 森 伸也

    応用物理学会春季学術講演会 2021/03/16

  3. 極微細半導体デバイスの量子輸送シミュレーション

    森 伸也

    第11回材料系ワークショップ 2021/02/10

  4. Monte Carlo simulation of two-dimensional carrier mobility in wide-gap semiconductor devices

    N. Mori, H. Tanaka, T. Hoshino, G. Mil'nikov

    International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 2021/01/20

  5. 経験的擬ポテンシャル法を用いた4H-SiCにおける浮遊電子状態の計算

    永溝 幸周, 田中 一, 森 伸也

    先進パワー半導体分科会第7回講演会 2020/12/10

  6. ファンデルワールスヘテロ構造におけるバンド間トンネルのNEGFシミュレーション

    森 伸也, 橋本 風渡, 三島 嵩也, 田中 一

    シリコン材料・デバイス研究会 2020/11/20

  7. 第一原理バンド計算を基盤とした原子層チャネルトンネルトランジスタのTCADシミュレーション

    浅井 栄大, 黒田 龍哉, 福田 浩一, 服部 淳一, 池上 努, 森 伸也

    シリコン材料・デバイス研究会 2020/11/20

  8. A model of dark current mechanism in barrier infrared photodetectors

    Yen Le Thi, Yoshinari Kamakura, Nobuya Mori

    シリコン材料・デバイス研究会 2020/11/19

  9. Comparative simulation study of intra-layer band-to-band tunneling in monolayer transition metal dichalcogenides

    F. Hashimoto, N. Mori

    2020 International Conference on Solid State Devices and Materials 2020/09/29

  10. Reduction of order of device hamiltonian with adaptive moment estimation

    J. Okada, F. Hashimoto, N. Mori

    2020 International Conference on Solid State Devices and Materials 2020/09/29

  11. The RSDFT-EM representation and first principle transport simulations of realistic field-Effect transistors

    G. Mil'nikov, N. Mori, J. Iwata, A. Oshiyama

    International Conference on Simulation of Semiconductor Processes and Devices 2020 2020/09/23

  12. TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with abinitio based NEGF calculation

    H. Asai, T. Kuroda, K. Fukuda, J. Hattori, T. Ikegami, N. Mori

    International Conference on Simulation of Semiconductor Processes and Devices 2020 2020/09/23

  13. 適応モーメント推定を利用した量子輸送シミュレーションの高速化

    岡田 丈, 橋本 風渡, 森 伸也

    応用物理学会秋季学術講演会 2020/09/11

  14. TMDCナノリボンにおけるバンド間トンネル電流のNEGF解析

    橋本 風渡, 森 伸也

    応用物理学会秋季学術講演会 2020/09/11

  15. 衝突イオン化係数のバンド構造に対する依存性の理論的解析

    田中 一, 木本 恒暢, 森 伸也

    応用物理学会秋季学術講演会 2020/09/10

  16. 界面制御した透明 ZnO 薄膜における熱電出力因子増大

    石部 貴史, 留田 純希, 渡辺 健太郎, 鎌倉 良成, 森 伸也, 成瀬 延康, 目良 裕, 山下 雄一郎, 中村 芳明

    応用物理学会秋季学術講演会 2020/09/08

  17. Coupled electron-phonon transport simulation of 1D nanostructures

    Y. Kajiwara, N. Mori

    International Symposium on Hybrid Quantum Systems 2017 2017/10

  18. Ballistic electron transport in coupled graphene nanoribbons

    F. Hashimoto, N. Mori

    International Symposium on Hybrid Quantum Systems 2017 2017/10

  19. Effects of boundary condition on phonon transport in two-dimensional harmonic lattice

    A. Ueno, N. Mori

    International Symposium on Hybrid Quantum Systems 2017 2017/10

  20. Analysis of type-II InAs/GaSb superlattice mid-wavelength infrared p-i-n photodetector using device simulation

    Y. L. Thi, Y. Kamakura, T. G. Etoh, N. Mori

    Proceedings of the 7th International Conference on Integrated Circuits, Design, and Verification 2017/10

  21. Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band monte carlo simulation

    R. Fujita, K. Konaga, Y. Ueoka, T. Kotani, Y. Kamakura, N. Mori

    Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices 2017 2017/09

  22. First-principles calculations of the non-equilibrium polarization in ultra-small Si nanowire devices

    G. Mil'nikov, J. Iwata, N. Mori, A. Oshiyama

    Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices 2017 2017/09

  23. Effects of dipole scattering on electron transport in gallium nitride-based HEMT

    T. Hoshino, N. Mori

    The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures 2017/07

  24. Nonequilibrium Green function simulations of band-to-band tunneling in in-plane MoS2/WS2 heterostructures

    T. Kuroda, N. Mori

    International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures 2017/07

  25. Inter-layer coupling effects on ballistic electron transport in multilayer graphene

    F. Hashimoto, N. Mori

    The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures 2017/07

  26. Equivalent model representation in first-principles transport simulations of nanowire MOSFETs

    G. Mil'nikov, N. Mori, J. Iwata, A. Oshiyama

    International Workshop on Computational Nanotechnology 2017/06

  27. The temporal resolution limit of the silicon image sensors

    T. G. Etoh, A. Q. Nguyen, Y. Kamakura, K. Shimonomura, Y. L. Thi, N. Mori

    2017 International Image Sensor Workshop 2017/06

  28. Inter-Layer Coupling Effects on Vertical Electron Transport in Multilayer Graphene Nanoribbons

    F. Hashimoto, N. Mori

    20TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 20) 2017

  29. Full Band Monte Carlo Simulation of Impact Ionization in Wide Bandgap Semiconductors Based on Ab Initio Calculation

    Y. Kamakura, R. Fujita, K. Konaga, Y. Ueoka, N. Mori, T. Kotani

    2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) 2016

  30. Monte Carlo Study on Anomalous Carrier Diffusion in Inhomogeneous Semiconductors

    N. Mori, R. J. A. Hill, A. Patane, L. Eaves

    19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19) 2015

  31. Ab Initio Study of Avalanche Breakdown in Diamond for Power Device Applications

    Y. Kamakura, T. Kotani, K. Konaga, N. Minamitani, G. Wakimura, N. Mori

    2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2015

  32. Effects of Internal Electric Field on Efficiency of Carrier Multiplication Solar Cells

    Futo Hashimoto, Nobuya Mori

    2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2015

  33. Quantum Transport Simulation of Ultra-small V-groove Junctionless Transistors

    Tatsuya Yamana, Nobuya Mori

    2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2014

  34. Extraction of Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Based on Monte Carlo Method

    Ryoma Ishida, Shunsuke Koba, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Shigeyasu Uno, Matsuto Ogawa

    2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) 2014

  35. Low-Temperature Deposition of Thin Si, Ge, and SiGe Films Using Reducing Activity of Ballistic Hot Electrons

    N. Koshida, R. Suda, M. Yagi, A. Kojima, R. Mentek, B. Gelloz, N. Mori, J. Shirakashi

    SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES 2014

  36. Electron-phonon interaction in Si nanowire devices: Low field mobility and self-consistent EM NEGF simulations

    Gennady Mil'nikov, Nobuya Mori

    2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) 2014

  37. Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Small FETs

    Y. Kamakura, I. N. Adisusilo, K. Kukita, G. Wakimura, S. Koba, H. Tsuchiya, N. Mori

    2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2014

  38. Effects of Atomic Disorder on Impact Ionization Rate in Silicon Nanodots

    N. Mori, M. Tomita, H. Minar, T. Watanabe, N. Koshida

    PHYSICS OF SEMICONDUCTORS 2013

  39. Nano-device Simulation from an Atomistic View

    N. Mori, G. Mil'nikov, H. Minari, Y. Kamakura, T. Zushi, T. Watanabe, M. Uematsu, K. M. Itoh, S. Uno, H. Tsuchiya

    2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2013

  40. The Impact of Increased Deformation Potential at MOS Interface on Quasi-Ballistic Transport in Ultrathin Channel MOSFETs Scaled down to Sub-10 nm Channel Length

    S. Koba, R. Ishida, Y. Kubota, H. Tsuchiya, Y. Kamakura, N. Mori, M. Ogawa

    2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2013

  41. Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors

    Nobuya Mori, Masashi Uematsu, Gennady Mil'Nikov, Hideki Minari, Kohei M. Itoh

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013

  42. Liquid-Phase Deposition of Thin Si and Ge Films Based on Ballistic Electro-reduction

    T. Ohta, R. Mentek, B. Gelloz, N. Mori, N. Koshida

    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES 2012

  43. Simulation of the Effect of Arsenic Discrete Distribution on Device Characteristics in Silicon Nanowire Transistors

    Masashi Uematsu, Kohei M. Itoh, Gennady Mil'nikov, Hideki Minari, Nobuya Mori

    2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 2012

  44. Atomic disorder effects on electronic states in InAs/GaAs intermediate-band solar cells

    Hiroki Takahashi, Hideki Minari, Nobuya Mori

    IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai 2012

  45. Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance

    H. Minari, T. Zushi, T. Watanabe, Y. Kamakura, S. Uno, N. Mori

    2011 Symposium on VLSI Technology Digest of Technical Papers 2011/06

  46. Magnetic Field Modulated Photoreflectance Study of the Electron Effective Mass in Dilute Nitride Semiconductors

    N. Mori, K. Hiejima, H. Kubo, A. Patane, L. Eaves

    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS 2011

  47. NEGF simulation of spin-transfer torque in magnetic tunnel junctions

    Yuki Hiramatsu, Yoshinari Kamakura, Nobuya Mori, Kenji Taniguchi

    IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai 2011

  48. Tailoring the electronic properties of vertically stacked quantum-dots by local potential modulation

    Hiroki Takahashi, Hideki Minari, Nobuya Mori

    IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai 2011

  49. Effects of a strained layer on transport characteristics of tunnel transistors

    Masahiro Yamamoto, Tatsuro Kitayama, Hideki Minari, Nobuya Mori

    IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai 2011

  50. Fully analytic compact model of ballistic gate-all-around MOSFET with rectangular cross section

    Tatsuhiro Numata, Shigeyasu Uno, Yoshinari Kamakura, Nobuya Mori, Kazuo Nakazato

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011

  51. Effects of atomic disorder on carrier transport in Si nanowire transistors

    Hideki Minari, Tomofumi Zushi, Takanobu Watanabe, Yoshinari Kamakura, Nobuya Mori

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011

  52. Low-dimensional quantum transport models in atomistic device simulations

    Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011

  53. Numerical simulation of transient heat conduction in nanoscale Si devices

    Yoshinari Kamakura, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi

    ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings 2010

  54. Quantum transport and electron-phonon interaction in nanoscale MOSFETs

    Nobuya Mori, Hideki Minari, Genaddy Mil'nikov, Yoshinari Kamakura

    ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings 2010

  55. Simplified Calculation Method of Electron Subband Profile in Ballistic Nanowire MOSFET

    Tatsuhiro Numata, Shigeyasu Uno, Kazuo Nakazato, Anna Sawicka, Gennady Mil'nikov, Yoshinari Kamakura, Nobuya Mori

    2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) 2010

  56. Subband Representation in Atomistic Transport Simulation of Nanowire Transistors

    G. V. Mil'nikov, N. Mori, Y. Kamakura, H. Minari

    2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) 2010

  57. A Theoretical Study of Effect of Gate Voltage on Electron-Modulated-Acoustic-Phonon Interactions in Silicon Nanowire MOSFETs

    Junichi Hattori, Shigeyasu Uno, Nobuya Mori, Kazuo Nakazato

    SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2010

  58. Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Nanoscale Devices

    Yoshinari Kamakura, Nubuya Mori, Kenji Taniguchi, Tomofumi Zushi, Takanobu Watanabe

    SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2010

  59. Strain Effects on Hole Current in Silicon Nanowire FETs

    Hideki Minari, Tatsuro Kitayama, Masahiro Yamamoto, Nobuya Mori

    SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2010

  60. Quasi-ballistic electron transport through silicon nano crystals

    Nobuya Mori, Hideki Minari, Shigeyasu Uno, Hiroshi Mizuta, Nobuyuki Koshida

    16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) 2009

  61. Full-band and atomistic study of electron-phonon interaction in graphene nanoribbons

    Tatsuro Kitayama, Hideki Minari, Nobuya Mori

    16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) 2009

  62. Comparative Study on Si and Ge p-type Nanowire FETs based on Full-Band Non-Equilibrium Green's Function Simulation

    Hideki Minari, Nobuya Mori

    2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2009

  63. Effect of random impurities on transport characteristics of nano-scale MOSFET

    Gernnady Mil'nikov, Nobuya Mori, Yoshinari Kamakura, Tatsuya Ezaki

    SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2008

  64. Effects of Wavefunction Modulation on Electron Transport in Ultrathin-Body DG MOSFETs

    Nobuya Mori, Hideki Minari

    SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2008

  65. Strain Effects on Ballistic Current in Ultrathin DG SOI MOSFETs

    Hideki Minari, Nobuya Mori

    SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2008

  66. A Theoretical Study of Electron Mobility Reduction due to Acoustic Phonon Modulation in a Free-Standing Semiconductor Nanowire

    Junichi Hattori, Shigeyasu Uno, Nobuya Mori, Kazuo Nakazato

    SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2008

  67. Probing the scattering potential of N-impurittes in GaAs by magneto-tunneling

    G. Allison, A. Patane, J. Endicott, L. Eaves, N. Mori, N. Kozlova, J. Freudenberger, N. Miura, D. K. Maude, M. Hopkinson

    INTERNATIONAL JOURNAL OF MODERN PHYSICS B 2007/04

  68. Crystalline orientation effects on ballistic hole current in ultrathin DG SOI MOSFETs

    H. Minari, N. Mori

    SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007 2007

  69. Reduction of acoustic phonon limited electron mobility due to phonon confinement in silicon nanowire MOSFETs

    Junichi Hattori, Shigeyasu Uno, Nobuya Mori, Kazuo Nakazato

    65th DRC Device Research Conference 2007

  70. Three-dimensional quantum transport simulation of ultra-small FinFETs

    H. Takeda, N. Mori

    Journal of Computational Electronics 2005/04

  71. Doping profile effects on device characteristics of nano-scale MOSFETs

    H Takeda, N Mori

    SISPAD: 2005 International Conference on Simulation of Semiconductor Processes and Devices 2005

  72. Phonon modification in SOI structures and its impact on electron transport

    Shigeyasu Uno, Nobuya Mori

    Device Research Conference - Conference Digest, DRC 2005

  73. Luminescence from GaN induced by midinfrared FEL pulses

    T Takahashi, O Mizuno, H Kubo, N Mori, C Hamaguchi, CT Foxon, L Eaves

    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II 2001

  74. Monte Carlo simulation of one- and two-dimensional electron gases

    K Yamasaki, T Ezaki, N Mori, C Hamaguchi

    COMPOUND SEMICONDUCTORS 1998 1999

  75. Electronic states in quantum dots: Effects of symmetry of the confining potential

    T Ezaki, Y Sugimoto, N Mori, C Hamaguchi

    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS 1998

  76. Electronic states in quantum dots: Effects of symmetry of the confining potential

    T Ezaki, Y Sugimoto, N Mori, C Hamaguchi

    COMPOUND SEMICONDUCTORS 1997 1998

  77. Electron transport in quantum wires at high temperature

    T Ezaki, N Mori, H Momose, K Taniguchi, C Hamaguchi

    HOT CARRIERS IN SEMICONDUCTORS 1996

  78. Tunneling spectroscopy as a probe of hot electrons in the upper Landau level of a 2DEG

    BRA Neves, L Eaves, N Mori, M Henini, OH Hughes

    HOT CARRIERS IN SEMICONDUCTORS 1996

  79. Monte Carlo simulation of hot electrons in quantum wires

    H Momose, N Mori, K Taniguchi, C Hamaguchi

    HOT CARRIERS IN SEMICONDUCTORS 1996

  80. A Fermi-edge singularity probed by resonant tunnelling spectroscopy

    N LaScala, AK Geim, PC Main, TJ Foster, PH Beton, JW Sakai, FW Sheard, N Mori, L Eaves

    COULOMB AND INTERFERENCE EFFECTS IN SMALL ELECTRONIC STRUCTURES 1994

Works 10

  1. 半導体ナノ構造における量子輸送現象に関する研究

    2004 -

  2. ゲート長10nm世代を見据えた量子輸送シミュレータの開発

    2004 -

  3. 半導体物理における強磁場に関する第16回国際会議、プログラム委員

    2004 -

  4. 16th International Conference on High Magnetic Fields in Semiconductor Physics, Program Comittee Member

    2004 -

  5. 第25回半導体物理学国際会議、副総務幹事

    2000 -

  6. 25th International Conference on the Physics of Semiconductors,Associate Secretary

    2000 -

  7. 第11回半導体における非平衡キャリア・ダイナミックスに関する国際会議、現地組織委員

    1999 -

  8. 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors,Local Organizing Comittee Member

    1999 -

  9. 第25回化合物半導体に関する国際シンポジウム、現地組織委員

    1998 -

  10. 25th International Symposium on Compound Semiconductors,Local Organizing Comittee Member

    1998 -

Institutional Repository 9

Content Published in the University of Osaka Institutional Repository (OUKA)
  1. 低温センターと低温センターだよりの思い出

    森 伸也

    大阪大学低温センター 50周年記念誌 p. 53-53 2025/06

  2. Acoustic Phonon Scattering in Free-Standing Anisotropic Silicon Plates

    Mori Nobuya

    Physica Status Solidi (B): Basic Research 2024/12/23

  3. 半導体トランジスタの第一原理デバイスシミュレーション

    森 伸也

    サイバーメディアHPCジャーナル Vol. 9 p. 3-6 2019/12

  4. 自己形成量子ドットの波動関数マッピング

    森 伸也

    大阪大学低温センターだより Vol. 123 p. 9-14 2003/07

  5. アルフェロフ教授のノーベル物理学賞受賞について

    森 伸也

    大阪大学低温センターだより Vol. 113 p. 22-22 2001/01

  6. 第25回半導体物理学国際会議

    森 伸也

    大阪大学低温センターだより Vol. 112 p. 15-18 2000/10

  7. 量子細線における磁気フォノン共鳴

    百瀬 英毅, 江崎 達也, 森 伸也, 浜口 智尋

    大阪大学低温センターだより Vol. 89 p. 15-20 1995/01

  8. 高電界下におけるGaAs結晶の磁気フォノン共鳴

    森 伸也, 谷口 研二, 浜口 智尋

    大阪大学低温センターだより Vol. 60 p. 5-8 1987/10

  9. 半導体ヘテロ構造における磁気フォノン共鳴と電子-フォノン相互作用に関する研究

    森 伸也