顔写真

PHOTO

Maida Osamu
毎田　修
Maida Osamu
毎田　修
Institutional repository
Graduate School of Engineering　Division of Electrical, Electronic and Information Engineering, Assistant Professor
Institutional repository

Research History 5

  1. 2007/04/01 - Present
    Osaka University Graduate School of Engineering Division of Electrical, Electronic and Information Engineering　Assistant Professor

  2. 2006/04 - Present
    大阪大学・大学院工学研究科・助手

  3. 2006/04/01 - 2007/03/31
    Osaka University Graduate School of Engineering Division of Electrical, Electronic and Information Engineering　Research Assistant

  4. 2000/10/01 - 2006/03/31
    Osaka University The Institute of Scientific and Industrial Research　Research Assistant

  5. 2000/10 - 2006/03
    大阪大学・産業科学研究所・助手

Professional Memberships 3

  1. 日本放射光学会

  2. 応用物理学会

  3. 日本物理学会

Papers 101

  1. Compressed Sensing EEG Measurement Technique with Normally Distributed Sampling Series

    Yuki OKABE, Daisuke KANEMOTO, Osamu MAIDA, Tetsuya HIROSE

    IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences　Vol. E105.A　No. 10　p. 1429-1433　2022/10/01　Research paper (scientific journal)

    Publisher: Institute of Electronics, Information and Communications Engineers (IEICE)

  2. Image Quality Improvement for Capsule Endoscopy Based on Compressed Sensing with K-SVD Dictionary Learning

    Yuuki HARADA, Daisuke KANEMOTO, Takahiro INOUE, Osamu MAIDA, Tetsuya HIROSE

    IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences　Vol. E105.A　No. 4　p. 743-747　2022/04/01　Research paper (scientific journal)

    Publisher: Institute of Electronics, Information and Communications Engineers (IEICE)

  3. Characterization of deep interface states in SiO2/B-doped diamond using the transient photocapacitance method

    Osamu Maida, Daiskuke Kanemoto, Tetsuya Hirose

    Thin Solid Films　Vol. 741　p. 139026-139026　2022/01　Research paper (scientific journal)

    Publisher: Elsevier BV

  4. A self-bias NAND gate and its application to non-overlapping clock generator for extremely low-voltage CMOS LSIs

    Hikaru Sebe, Kaori Matsumoto, Ryo Matsuzuka, Osamu Maida, Daisuke Kanemoto, Tetsuya Hirose

    Japanese Journal of Applied Physics　Vol. 60　No. SB　p. SBBL06-SBBL06　2021/05/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  5. A 35-mV supply ring oscillator consisting of stacked body bias inverters for extremely low-voltage LSIs

    Masaya Nishi, Kaori Matsumoto, Nobutaka Kuroki, Masahiro Numa, Hikaru Sebe, Ryo Matsuzuka, Osamu Maida, Daisuke Kanemoto, Tetsuya Hirose

    IEICE ELECTRONICS EXPRESS　Vol. 18　No. 6　2021/03　Research paper (scientific journal)

  6. An 11.8 nA ultra-low power active diode using a hysteresis common gate comparator for low-power energy harvesting systems

    Kaori Matsumoto, Hiroki Asano, Yuichiro Nakazawa, Nobutaka Kuroki, Masahiro Numa, Osamu Maida, Daisuke Kanemoto, Tetsuya Hirose

    IEICE Electronics Express　Vol. 17　No. 11　p. 20200103-20200103　2020/06/10　Research paper (scientific journal)

    Publisher: Institute of Electronics, Information and Communications Engineers (IEICE)

  7. A 34-mV Startup Ring Oscillator Using Stacked Body Bias Inverters for Extremely Low-Voltage Thermoelectric Energy Harvesting

    Masaya Nishi, Kaori Matsumoto, Nobutaka Kuroki, Masahiro Numa, Hikaru Sebe, Ryo Matsuzuka, Osamu Maida, Daisuke Kanemoto, Tetsuya Hirose

    2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)　2020/06　Research paper (international conference proceedings)

    Publisher: IEEE

  8. Sub-0.1V Input, Low-Voltage CMOS driver circuit for multi-stage switched capacitor voltage boost converter

    Masaya Nishi, Yuichiro Nakazawa, Kaori Matsumoto, Nobutaka Kuroki, Masahiro Numa, Ryo Matsuzuka, Osamu Maida, Daisuke Kanemoto, Tetsuya Hirose

    2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019　p. 530-533　2019/11　Research paper (international conference proceedings)

  9. Transient photocapacitance measurement for characterization of deep defects in B-doped diamond films

    Osamu Maida, Ryosuke Yamashita

    2019/07

  10. Development of Highly-Sensitive Transient Photocapacitance Mesurement System for Deep Defects in Boron-Doped Diamond (100) Films

    Kenta Miyawaki, Ryosuke Yamashita, Taishi Kodama, Osamu Maida

    2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)　2018/06　Research paper (international conference proceedings)

    Publisher: IEEE

  11. Characterization of the high-quality CVD diamond films for quantum information device

    Osamu Maida, Toshimichi Ito

    2018/02

  12. Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

    Osamu Maida, Tomohiro Tabuchi, Toshimichi Ito

    Journal of Crystal Growth　Vol. 480　p. 51-55　2017/12/15　Research paper (scientific journal)

    Publisher: Elsevier B.V.

  13. Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method

    Osamu Maida, Takanori Hori, Taishi Kodama, Toshimichi Ito

    Materials Science in Semiconductor Processing　Vol. 70　p. 203-206　2017/11/01　Research paper (scientific journal)

    Publisher: Elsevier Ltd

  14. Behavior of nitrogen-related luminescence centers in laser-cut single-crystalline diamond under irradiation with keV electron beam

    Kenji Maruoka, Taiki Naito, Osamu Maida, Toshimichi Ito

    MRS Advances　Vol. 2　No. 43　p. 2355-2360　2017　Research paper (international conference proceedings)

    Publisher: Materials Research Society

  15. Transient photocapacitance study of deep-level defects in boron-doped diamond films

    O. Maida, T. Hori, T. Kodama, T. Ito

    2016/09

  16. Characterization of Deep Defects in Boron-Doped CVD Diamond Films Using Transient Photocapacitance Method

    O. Maida, T. Hori, T. Kodama, T. Ito

    2016/06　Research paper (international conference proceedings)

  17. Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition

    Osamu Maida, Shuhei Tada, Haruki Nishio, Toshimichi Ito

    Journal of Crystal Growth　Vol. 424　p. 33-37　2015/08/15　Research paper (scientific journal)

    Publisher: Elsevier

  18. Characterization of boron-doped CVD diamond films using transient photocapasitance method

    O. Maida, T. Hori, T. Ito

    2015/05

  19. Mutual relation among lattice distortion, Hall effect property and band edge cathodoluminescence of heavily-boron-doped microwave-plasma CVD diamond films homoepitaxially grown on vicinal (001) high-pressure/high-temperature-synthesized Ib substrates

    Reona Mori, Osamu Maida, Toshimichi Ito

    Journal of Crystal Growth　Vol. 415　p. 84-92　2015/04/01　Research paper (scientific journal)

    Publisher: Elsevier

  20. Semiconducting properties of multilayered single-crystalline CVD diamond having heavily boron-doped thin layers with different structures

    Tabuchi Tomohiro, Maida Osamu, Ito Toshimichi

    Abstract of annual meeting of the Surface Science of Japan　Vol. 35　p. 127-127　2015

    Publisher: The Surface Science Society of Japan

  21. High growth rate deposition of phosphorus-doped homoepitaxial (001) diamond films for deep-ultraviolet light emitting device

    Osamu Maida, Shuhei Tada, Toshimichi Ito

    Thin Solid Films　Vol. 557　p. 227-230　2014/04/30　Research paper (scientific journal)

    Publisher: Elsevier

  22. ホモエピCVDダイヤモンドの研究動向

    伊藤 利道, 毎田 修

    2013/04

  23. Growth and characterization of heavily phosphorus-doped homoepitaxial (001) diamond films for deep-ultraviolet light emitting device

    O. Maida, S. Tada, T. Ito

    2013/01

  24. Microwave-plasma chemical-vapor-deposition homoepitaxial processes suitable for heavily p-doped diamond films on vicinal (001) surfaces

    S. Tada, H. Nishio, O. Maida, T. Ito

    2012/10　Research paper (international conference proceedings)

  25. Carrier transport property of heavily boron-doped degenerate diamond single-crystalline thin layers etched with hydrogen plasma

    T. Kuki, O. Maida, T. Ito

    2012/09

  26. Sensitivity improvement of γ-ray detector fabricated with self-standing CVD diamond by attaching heavy element film

    Hidenori Sato, Osamu Maida, Toshimichi Ito

    Diamond and Related Materials　Vol. 29　p. 2-7　2012/09　Research paper (scientific journal)

    Publisher:

  27. Survey meter combining CVD diamond and silicon detectors for wide range of dose rates and high accumulated doses

    Hidenori Sato, Akihito Yamaguchi, Osamu Maida, Toshimichi Ito

    Radiation Measurements　Vol. 47　No. 4　p. 266-271　2012/04　Research paper (scientific journal)

  28. Improvement of Crystalline Quality of CVD Diamond and Its Application to Electronic Devices

    Toshimichi Ito, Hidenori Sato, Osamu Maida

    2011/12　Research paper (international conference proceedings)

  29. Improvement on p-type Performance of CVD Diamond by Isolating Thin Heavily-boron-doped Layer as Innumerable Islands

    Osamu Maida, Masayuki Aono, Toshimichi Ito

    2011/11

  30. Performance of Radiation-Tolerant Diamond Detector Fabricated with Self-standing Single-crystalline CVD Film

    H. Sato, A. Yamaguchi, O. Maida, T. Ito

    2011/11

  31. Growth of Phosphorus-Doped Homoepitaxial CVD Diamond on Vicinal (001) Substrates

    Haruki Nishio, Shuhei Tada, Osamu Maida, Toshimichi Ito

    2011/11

  32. Improvement on Device Performance of Lateral p-i-p Diamond Transistors with Underlain Thin Nitrogen-Doped Layer

    Takafumi Ukida, Osamu Maida, Toshimichi Ito

    Vol. 2　p. 159-160　2011/11　Research paper (international conference proceedings)

  33. Hall data analysis of heavily boron-doped CVD diamond films using a model considering an impurity band well separated from valence bands

    Masayuki Aono, Osamu Maida, Toshimichi Ito

    Diamond and Related Materials　Vol. 20　p. 1357-1362　2011/10　Research paper (scientific journal)

    Publisher: Elsevier

  34. Structure optimization of diamond personal dosimeters based on Monte Carlo simulations

    Hidenori Sato, Osamu Maida, Toshimichi Ito

    Diamond and Related Materials　Vol. 20　No. 2　p. 140-144　2011/02　Research paper (scientific journal)

    Publisher: Elsevier

  35. Reduced influences of the HPHT substrates on the electronic quality of homoepitaxial CVD diamond layers and on their ultraviolet detector performance

    Osamu Maida, Hidenori Sato, Masayuki Kanasugi, Shota Iguchi, Toshimichi Ito

    Diamond and Related Materials　Vol. 20　No. 2　p. 242-245　2011/02　Research paper (scientific journal)

    Publisher: Elsevier

  36. Structure optimization of diamond personal dosimeters based on Monte Carlo simulations

    Hidenori Sato, Osamu Maida, Toshimichi Ito

    2010/09

  37. Improvement in low-voltage performance of surface-electrode soft-X-ray detectors composed of undoped homoepitaxial CVD/HPHT Ib diamond layers

    M. Kanasugi, Y. Iwakaji, T. Yamamoto, O. Maida, Y. Takeda, Y. Saitoh, T. Ito

    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment　Vol. 621　No. 1-3　p. 650-655　2010　Research paper (scientific journal)

  38. Electron detection performance of diamond avalanche diode

    Hideo Morishita, Takashi Ohshima, Michio Hatano, Yoko Iwakaji, Osamu Maida, Toshimichi Ito

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics　Vol. 28　No. 6　p. 1169-1172　2010　Research paper (scientific journal)

    Publisher: AVS Science and Technology Society

  39. Self-standing device-quality single-crystalline diamond films on vicinal (001) surfaces fabricated using microwave-plasma chemical-vapor-deposition method

    Shota Iguchi, Osamu Maida, Toshimichi Ito

    Thin Solid Films　Vol. 518　No. 21　p. S38-S41　2010　Research paper (international conference proceedings)

    Publisher: Elsevier

  40. Self-standing high-quality single-crystalline diamond films fabricated using high-power microwave-plasma CVD method

    Shota Iguchi, Osamu Maida, Toshimichi Ito

    2009/07　Research paper (international conference proceedings)

  41. Characterization of diamond ultraviolet detectors fabricated with high-quality single-crystalline chemical vapor deposition films

    Y. Iwakaji, M. Kanasugi, O. Maida, T. Ito

    Applied Physics Letters　Vol. 94　No. 22　p. 223511-1-223511-3　2009　Research paper (scientific journal)

    Publisher: American Institute of Physics

  42. Homoepitaxial diamond films grown on vicinal substrates

    S. Kawashima, O. Maida, T. Ito

    2008/10

  43. Performance of stack-type soft-X-ray detectors fabricated with high-quality CVD diamond films

    O. Maida, Y. Iwakaji, M. Kanasugi, S. Iguchi, Y. Takeda, Y. Saitoh, T. Ito

    2008/10

  44. Characterization of soft-X-ray detectors fabricated with high-quality CVD diamond thin films

    Y. Iwakaji, M. Kanasugi, O. Maida, Y. Takeda, Y. Saitoh, T. Ito

    Applied Surface Science　Vol. 254　No. 19　p. 6277-6280　2008/07/30　Research paper (scientific journal)

  45. Characterization of phosphorus-doped homoepitaxial (1 0 0) diamond films grown using high-power-density MWPCVD method with a conventional quartz-tube chamber

    Takahiro Nakai, Osamu Maida, Toshimichi Ito

    Applied Surface Science　Vol. 254　No. 19　p. 6281-6284　2008/07/30　Research paper (scientific journal)

    Publisher: Elsevier

  46. Applications of high quality diamond to radiation detectors

    H. Sato, O. Maida, T. Ito, T. Yamano, T. Kato, S. Matsubara

    2008/07　Research paper (international conference proceedings)

  47. Diamond sensor fabricated with high-quality CVD films

    Toshimichi Ito, Osamu Maida, Tokuyuki Teraji

    New Diamond　Vol. 24　No. 3　2008/07

    Publisher: 株式会社 オーム社

  48. Fabrication and characterization of ultra-violet detectors using high-quality CVD diamond films

    Y. Iwakaji, M. Kanasugi, O. Maida, T. Ito

    2008/05

  49. Characterization of substrate off-angle effects for high-quality homoepitaxial CVD diamond films

    Osamu Maida, Hidetaka Miyatake, Tokuyuki Teraji, Toshimichi Ito

    Diamond and Related Materials　Vol. 17　No. 4-5　p. 435-439　2008/04　Research paper (scientific journal)

    Publisher: Elsevier

  50. Complete prevention of reaction at HfO2/Si interfaces by 1 nm silicon nitride layer

    H. Kobayashi, K. Imamura, K. Fukayama, S.-S. Im, O. Maida, Y.-B. Kim, H.-C. Kim, D.-K. Choi

    Surf. Sci.　2008/01　Research paper (scientific journal)

  51. Complete prevention of reaction at HfO2/Si interfaces by 1 nm silicon nitride layer

    Hikaru Kobayashi, Kentaro Imamura, Ken-ichi Fukayama, Sung-Soon Im, Osamu Maida, Young-Bae Kim, Hyun-Chul Kim, Duck-Kyun Choi

    Surface Science　2008/01　Research paper (scientific journal)

  52. High-quality diamond films grown at high deposition rates using high-power-density MWPCVD method with conventional quartz-type chamber

    Takahiro Nakai, Kazuya Arima, Osamu Maida, Toshimichi Ito

    Journal of Crystal Growth　Vol. 309　No. 2　p. 134-139　2007/12/01　Research paper (scientific journal)

    Publisher: Elsevier

  53. Room temperature growth of crystalline Si thin films on nano-scaled substrates using DC magnetron sputtering deposition method

    H. Yamaguchi, O. Maida, T. Ito

    2007/11

  54. Diffusion control of soft-X-ray-excited carriers in high-quality CVD diamond layers to the HPHT substrate

    M. Kanasugi, Y. Iwakaji, T. Yamamoto, O. Maida, Y. Takeda, Y. Saitoh, T. Ito

    2007/11　Research paper (international conference proceedings)

  55. Crystalline quality improvements of the homoepitaxial CVD diamond films on the vicinal substrates

    O. Maida, H. Miyatake, T. Teraji, T. Ito

    2007/11　Research paper (international conference proceedings)

  56. Al2O3 微粒子を用いた光閉じ込め構造を有する a-Si 太陽電池の作製

    毎田 修, 岡藤 麻子, 小林 克稔, 小林 光

    真空　2007/08　Research paper (scientific journal)

  57. Further improvement in high crystalline quality of homoepitaxial CVD diamond

    H. Miyatake, K. Arima, O. Maida, T. Teraji, T. Ito

    Diamond and Related Materials　Vol. 16　No. 4-7　p. 679-684　2007/04　Research paper (scientific journal)

    Publisher: Elsevier

  58. High-performance diamond soft-X-ray detectors with internal amplification function

    H. Matsubara, Y. Saitoh, O. Maida, T. Teraji, K. Kobayashi, T. Ito

    Diamond and Related Materials　Vol. 16　No. 4-7　p. 1044-1048　2007/04　Research paper (scientific journal)

    Publisher: Elsevier

  59. Preparation of Fluorocarbon Thin Film Deposited by Soft X-Ray Ablation and its Electrical Characteristics and Thermal Stability

    Takeshi Kanashima, Osamu Maida, Norihiro Kohma, Masaki Okumoto, Masato Ueno, Satoshi Kitai, Masanori Okuyama, Haruhiko Ohashi, Yusuke Tamenori

    Applied Surface Science　2006/11　Research paper (scientific journal)

  60. A method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions

    H. Kobayashi, T. Sakurai, Y. Yamashita, T. Kubota, O. Maida, M. Takahashi

    Applied Surface Science　2006/08　Research paper (scientific journal)

  61. Low temperature formation of SiO<inf>2</inf>/Si structure by nitric acid vapor

    Kentarou Imamura, Osamu Maida, Kensaku Hattori, Masao Takahashi, Hikaru Kobayashi

    Journal of Applied Physics　Vol. 100　No. 11　2006　Research paper (scientific journal)

  62. Interface states for HfO 2/Si structure observed by x-ray photoelectron spectroscopy measurements under bias

    Osamu Maida, Ken-Ichi Fukayama, Masao Takahashi, Hikaru Kobayashi, Young-Bae Kim, Hyun-Chul Kim, Duck-Kyun Choi

    Applied Physics Letters　Vol. 89　No. 12　2006　Research paper (scientific journal)

  63. Post-oxidation annealing treatments to improve Si/ultrathin SiO2 characteristics formed by nitric acid oxidation method

    Asuha, Y.-L. Liu, O. Maida, M. Takahashi, H. Kobayashi

    Journal of Electrochemical Society　2004/12　Research paper (scientific journal)

  64. Semiconductor surface and interface passivation by cyanide treatment

    H. Kobayashi, M. Takahashi, O. Maida, A. Asano, T. Kubota, J. Ivanco, A. Nakajima, K. Akimoto

    Applied Surface Science　2004/07　Research paper (scientific journal)

  65. Removal of copper and nickel contaminants from Si surface by use of cyanide solution

    N. Fujiwara, Y.-L. Liu, T. Nakamura, O. Maida, M. Takahashi, H. Kobayashi

    Applied Surface Science　2004/07　Research paper (scientific journal)

  66. Control of flat-band voltage of Si-based metal-oxide-semiconductor diodes by inclusion of cesium ions in silicon dioxide

    T. Kobayashi, K. Tanaka, O. Maida, H. Kobayashi

    Applied Physics Letters　2004/06　Research paper (scientific journal)

  67. Nitiric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density

    H. Kobayashi, Asuha, O. Maida, M. Takahashi, H. Iwasa

    Journal of Applied Physics　2003/11　Research paper (scientific journal)

  68. Preparation and Characterization of High-$k$ Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition

    Satoshi Kitai, Osamu Maida, Takeshi Kanashima, Masanori Okuyama

    Jpn. J. Appl. Phys., Vol. 42, pages 247-253　Vol. 42　No. 1　p. 247-253　2003/04　Research paper (scientific journal)

  69. Preparation and characterization of fluorocarbon thin films deposited by soft X-ray ablation of polytetrafluoroethylene

    Takeshi Kanashima, Osamu Maida, Norinao Kohma, M. Okumoto, Masato Ueno, Satoshi Kitai, Masanori Okuyama, Haruhiko Ohashi

    Jpn. J. Appl. Phys., Vol. 42, pages L603-L606　2003/04　Research paper (scientific journal)

  70. Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO2 interface

    O. Maida, A. Asano, M. Takahashi, H. Iwasa, H. Kobayashi

    Surface Science　2003/03　Research paper (scientific journal)

  71. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    N. Fujiwara, T. Fujinaga, D. Niinobe, O. Maida, M. Takahashi, H. Kobayashi

    Acta Physica Slovaca　2003/03　Research paper (scientific journal)

  72. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

    Asuha, Takuya Kobayashi, Osamu Maida, Morio Inoue, Masao Takahashi, Yoshihiro Todokoro, Hikaru Kobayashi

    Applied Physics Letters　Vol. 81　No. 18　p. 3410-3412　2002/10/28　Research paper (scientific journal)

  73. シアン処理によるシリコン欠陥準位の消滅と太陽電池の高性能化

    高橋昌男, 毎田修, 小林光

    Materials Integration, vol. 15 No. 8　2002/10　Research paper (scientific journal)

  74. Decrease in the leakage current density of Si-based metal-oxide- semiconductor diodes by cyanide treatment

    Akira Asano, Asuha, Osamu Maida, Yoshihiro Todokoro, Hikaru Kobayashi

    Applied Physics Letters　Vol. 80　No. 24　p. 4552-4554　2002/06/17　Research paper (scientific journal)

  75. Effects of postmetallization annealing on ultrathin SiO2 layer properties

    Asuha, Toshiro Yuasa, Osamu Maida, Hikaru Kobayashi

    Applied Physics Letters　Vol. 80　No. 22　p. 4175-4177　2002/06/03　Research paper (scientific journal)

  76. Improvement of electrical characteristics of silicon oxynitride layers by a platinum method

    T. Mizokuro, M. Tamura, T. Yuasa, T. Kobayashi, O. Maida, M. Takahashi, H. Kobayashi

    2002/06　Research paper (scientific journal)

  77. Improvement of Amorphous Silicon pin Junction Solar Cell Characteristics by Crown-Ether Cyanide Treatment

    Osamu Maida, Tetsushi Fujinaga, Masao Takahashi, Hikaru Kobayashi

    2002/04

    Publisher: WIP-Renewable Energies

  78. COMPLETE PREVENTION OF PHOTO-DEGRADATION OF AMORPHOUS Si FILMS BY CROWN-ETHER CYANIDE TREATMENT

    Hikaru KOBAYASHI, Naozumi FUJIWARA, Daisuke NIINOBE, Osamu MAIDA, Masao TAKAHASHI

    2002/04

    Publisher: WIP-Renewable Energies

  79. IMPROVEMENT OF POLYCRYSTALLINE Si-BASED SOLAR CELL CHARACTERISTICS BY CYANIDE TREATMENT

    Masao Takahashi, Akira Asano, Osamu Maida, Hikaru Kobayashi

    2002/04

    Publisher: WIP-Renewable energies

  80. Passivation of defect states in amorphous and crystalline Si by use of cyanide treatment and improvement of solar cell characteristics

    Hikaru Kobayashi, Naozumi Fujiwara, Tetsushi Fujinaga, Daisuke Niinobe, Osamu Maida, Masao Takahashi

    Materials Research Society Symposium - Proceedings　Vol. 715　p. 441-452　2002　Research paper (international conference proceedings)

  81. Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition

    Satoshi Kitai, Osamu Maida, Takeshi Kanashima, Masanori Okuyama

    2001/09　Research paper (international conference proceedings)

  82. Preparation of Zr, Hf andLantaide High-k gate oxide thin films

    M. Okuyama, T. Kanashima, S. Kitai, M, Ueno.O. Maida, M. Sohgawa, H. Kanda

    2001/09

  83. Zr, HfおよびLanthanod酸化物High-kゲート絶縁膜の作製

    奥山雅則, 金島岳, 北井聡, 上野正人, 毎田 修, 寒川雅之, 神田浩文

    2001/06

  84. Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature

    T. Kanashima, O. Maida, N. Kohma, M. Agata, S. Yudate, M. Ueno, M. Okuyama, H. Ohashi

    Japanese Journal of Applied Physics　Vol. 40　No. 6　p. 4195-4196　2001/06　Research paper (scientific journal)

    Publisher: The Japan Society of Applied Physics

  85. Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator

    Maida Osamu, Kohma Norinao, Ueno Masato, Shibuya Akira, Kanashima Takeshi, Okuyama Masanori, Ohashi Haruhiko

    Jpn J Appl Phys　Vol. 40　No. 4　p. 2435-2439　2001/04　Research paper (scientific journal)

    Publisher: INSTITUTE OF PURE AND APPLIED PHYSICS

  86. Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature

    Takeshi Kanashima, Osamu Maida, Norinao Kohma, Masashi Agata, Shinji Yudate, Masato Ueno, Masanori Okuyama, Haruhiko Ohashi

    Jpn. J. Appl. Phys., Vol. 40, pages 4195-4196　Vol. 40　No. 6　p. 4195-4196　2001/04　Research paper (scientific journal)

    Publisher: The Japan Society of Applied Physics

  87. Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-ray from Figure-8 Undulator

    O. Maida, N. Kohma, M. Ueno, S. Yudate, A. Shibuya, T. Kanashima, M. Okuyama, H. Ohashi

    Jpn J Appl Phys　Vol. 40　No. 4　p. 2435-2439　2001/04　Research paper (scientific journal)

    Publisher: INSTITUTE OF PURE AND APPLIED PHYSICS

  88. Optical Characterization of Antenna-Area-Dependent Gate Oxide Charging Damage in MOS Capacitors by Photoreflectance Spectroscopy

    Masashi Agata, Masayuki Sohgawa, Osamu Maida, Koji Eriguchi, Akira Fujimoto, Takeshi Kanashima, Masanori Okuyama

    2000/05

  89. Optical Characterization of Antenna-Area-Dependent Gate Oxide Charging Damage in MOS Capacitors by Photoreflectance Spectroscopy

    Masashi Agata, Masayuki Sohgawa, Osamu Maida, Koji Eriguchi, Akira Fujimoto, Takeshi Kanashima, Masanori Okuyama

    2000/04　Research paper (international conference proceedings)

  90. Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy

    Masashi Agata, Hideo Wada, Osamu Maida, Koji Eriguchi, Akira Fujimoto, Takeshi Kanashima, Masanori Okuyama

    Jpn. J. Appl. Phys., Vol. 39, pages 2040-2044　Vol. 39　No. 4　p. 2040-2044　2000/04　Research paper (scientific journal)

  91. Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy

    M. Agata, H. Wada, O. Maida, K. Eriguchi, A. Fujimoto, T. Kanashima, M. Okuyama

    Japanese Journal of Applied Physics　Vol. 39　No. 4　p. 2040-2044　2000/04　Research paper (scientific journal)

    Publisher: The Japan Society of Applied Physics

  92. SiO2 Etching and Formation of Si Oxide and Nitride Induced by Soft X-ray from SPring-8 Undulator

    Okuyama Masanori, Maida Osamu, Kohma Norinao, Kanashima Takeshi, Ohashi Haruhiko

    The Review of Laser Engineering　Vol. 28　No. Supplement　p. S7-S8　2000

    Publisher: The Laser Society of Japan

  93. Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy

    Masashi Agata, Masayuki Sohgawa, Osamu Maida, Koji Eriguchi, Akira Fujimoto, Takeshi Kanashima, Masanori Okuyama

    1999/12

  94. Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy

    Masashi Agata, Hideo Wada, Osamu Maida, Koji Eriguchi, Akira Fujimoto, Takeshi Kanashima, Masanori Okuyama

    Vol. 39　No. 4　p. 2040-2044　1999/09　Research paper (international conference proceedings)

  95. Evaluation of Interface SiOx Layer in Ultrathin SiOx Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiOx-Si Diode

    Osamu Maida, Norio Okada, Takeshi Kanashima, Masanori Okuyama

    Jpn. J. Appl. Phys., Vol. 38, pages 2341-2344　1999/04　Research paper (scientific journal)

  96. Evaluation of Interface SiOx Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO2-Si Diode

    O. Maida, N. Okada, T.Kanashima, M. Okuyama

    1999/04　Research paper (scientific journal)

  97. Evaluation of Interface SiOx Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiOx-Si Diode

    Osamu Maida, Norio Okada, Takeshi Kanashima, Masanori Okuyama

    1998/09　Research paper (international conference proceedings)

  98. Electronic characterization of Si/SiO2 structure using photo-CVD SiO2 thin film on atomically flat Si substrate

    Osamu Maida, Hideaki Yamamoto, Norio Okada, Takeshi Kanashima, Masanori Okuyama

    Appl. Surf. Sci., Vol. 130-132, pages 214-220　1998/04　Research paper (scientific journal)

  99. Electronic Characterization of SiO2/Si Structure Using Photo-CVD SiO2 Thin Film on Atomically Flat Si Substrates

    O. Maida, H. Yamamoto, N. Okada, T. Kanashima, M. Okuyama

    1998/04　Research paper (scientific journal)

  100. Electronic Characterization of SiO2/Si Structure Using Photo-CVD SiO2 Thin Film on Atomically Flat Si Substrates

    Osamu Maida, Hideaki Yamamoto, Norio Okada, Takeshi Kanashima, Masanori Okuyama

    1997/10　Research paper (international conference proceedings)

  101. Characterization of Photo-CVD SiO2 Thin Films and SiO2/Si Interface

    Masanori Okuyama, Hideaki Yamamoto, Takaaki Imai, Osamu Maida, Takeshi Kanashima

    1996/10　Research paper (international conference proceedings)

Misc. 2

  1. Fabrication of the a-Si solar cells with the light trapping structure by the Al 2O 3 fine particles

    Osamu Maida, Asako Okafuji, Katsutoshi Kobayashi, Hikaru Kobayashi

    Shinku/Journal of the Vacuum Society of Japan　Vol. 50　No. 8　p. 534-536　2007

  2. Preparation and characterization of high-k praseodymium and lanthanoid oxide thin films prepared by pulsed laser deposition

    S Kitai, O Maida, T Kanashima, M Okuyama

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS　Vol. 42　No. 1　p. 247-253　2003/01

Presentations 49

  1. 直接遷移型半導体自立結晶における外部量子効率と自己吸収の関係

    佐野 昂志, 市川 修平, 毎田 修, 小島 一信

    第70回応用物理学会春季学術講演会　2023/03/17

  2. スパッタアニールAlNテンプレート上AlGaN薄膜の局在発光特性の評価

    市川 修平, 上杉 謙次郎, 齊藤 一輝, 肖 世玉, 正直 花奈子, 中村 孝夫, 毎田 修, 三宅 秀人, 小島 一信

    2023/03/17

  3. 時間分解二光子光電子分光法によるInGaN (0001)の表面キャリア寿命測定

    市川 修平, 松田 祥伸, 道上 平士郎, 毎田 修, 船戸 充, 川上 養一, 小島 一信

    第70回応用物理学会春季学術講演会　2023/03/17

  4. ナノピラー型メタ表面を用いた円偏光InGaN発光素子の設計

    鈴木 恭平, 村田 雄生, 市川 修平, 戸田 晋太郎, 毎田 修, 小島 一信

    第70回応用物理学会春季学術講演会　2023/03/15

  5. 二光子光電子分光による GaAs (110) における表面再結合寿命の評価

    市川修平, 毎田 修, 小島一信

    第42回ナノテスティングシンポジウム　2022/11/10

  6. ホモエピタキシャル成長ホウ素ドープダイヤモンド半導体結晶の深い欠陥準位評価

    毎田 修, 市川修平, 小島一信

    第42回ナノテスティングシンポジウム　2022/11/10

  7. Characterization of deep level defects in boron-doped (001) and (111) diamond

    O. Maida, S. Ichikawa, K. Kojima

    21th International Vacuum Congress　2022/09/12

  8. 時間分解2光子光電子分光法を用いた表面再結合寿命の直接評価

    市川修平, 毎田 修, 小島一信

    第83回応用物理学会秋季学術講演会　2022/09

  9. FVFを応用したPSRR帯域拡張回路を搭載した脳波計測ウェアラブルデバイス向け低消費LDO

    三井 健司, 兼本 大輔, 毎田 修, 廣瀬 哲也

    第196回システムとLSIの設計技術研究発表会　2021/12/01

  10. 圧縮センシングを活用した心電図計測フレームワークの一設計法

    松村 侑紀, 兼本 大輔, 毎田 修, 廣瀬 哲也

    第196回システムとLSIの設計技術研究発表会　2021/12/01

  11. Transient photocapacitance measurement for characterization of deep level defects in boron-doped (001) and (111) diamond films

    O. Maida, T. Kodama, D. Kanemoto, Tetsuya Hirose

    The 9th International Symposium on Surface Science

  12. SiO2/ホウ素添加CVDダイヤモンド界面の過渡光容量法を用いた界面準位評価

    毎田 修, 児玉 大志, 兼本 大輔, 廣瀬 哲也

    2021年日本表面真空学会学術講演会　2021/11/04

  13. 過渡光容量分光法による (111)ホウ素ドープCVDダイヤモンド薄膜の結晶欠陥評価

    毎田 修, 児玉 大志, 兼本 大輔, 廣瀬 哲也

    第82回応用物理学会秋季学術講演会　2021/09/23

  14. 高精度参照電流源回路を不要とする品質劣化モニタセンサLSI

    渥美 光真, 瀬部 光, 中野 太地, 池田 隆希, 毎田 修, 兼本 大輔, 廣瀬 哲也

    LSIとシステムのワークショップ2021　2021/05/10

  15. 微小温度差発電のための極低電圧昇圧コンバータ用ドライバ回路

    三原 柊平, 瀬部 光, 毎田 修, 兼本 大輔, 廣瀬 哲也

    LSIとシステムのワークショップ2021　2021/05/10

  16. 超低消費電力で動作するオンチップ電圧検知回路の設計

    笹谷 昌平, 中野 太地, 瀬部 光, 毎田 修, 兼本 大輔, 廣瀬 哲也

    LSIとシステムのワークショップ2021　2021/05/10

  17. 圧縮センシングを用いた低消費電力脳波計測フレームワークのサンプリング間隔の検討

    岡部 勇樹, 兼本 大輔, 望月 智弥, 毎田 修, 廣瀬 哲也

    VLSI設計技術研究会　2021/01/25

  18. OD-ICAを利用した圧縮センシング脳波計測フレームワークにおけるICAアルゴリズムの比較

    奥村 渡, 兼本 大輔, 毎田 修, 廣瀬 哲也

    VLSI設計技術研究会　2021/01/25

  19. A Self-Bias NAND Gate and its Application to Non-Overlapping Clock Generator for Extremely Low-Voltage CMOS LSIs

    H. Sebe, K. Matsumoto, R. Matsuzuka, O. Maida, D. Kanemoto, T. Hirose

    2020 International Conference on Solid State Devices and Materials

  20. A 34-mV startup ring oscillator using stacked body bias inverters for extremely low-voltage thermoelectric energy harvesting

    M. Nishi, K. Matsumoto, N. Kuroki, M. Numa, H. Sebe, R. Matsuzuka, O. Maida, D. Kanemoto, T. Hirose

    18th IEEE international new circuits and systems conference

  21. 高出力マイクロ波プラズマCVD法によるホモエピタキシャルダイヤモンド薄膜の基板品質及びオフ角依存性

    川嶋慎也, 宮武秀宇, 有馬和也, 毎田修, 寺地徳之, 伊藤利道

    応用物理学関係連合講演会講演予稿集　2008

  22. 高出力マイクロ波プラズマCVD法により高速成長した高品質ホモエピタキシャル(001)ダイヤモンド薄膜のオフ角依存性

    宮武秀宇, 有馬和也, 毎田修, 寺地徳之, 伊藤利道

    応用物理学関係連合講演会講演予稿集　2007

  23. 高品質単結晶CVDダイヤモンド薄膜を用いた軟X線検出器の特性評価

    松原弘, 毎田修, 寺地徳之, 伊藤利道, 斎藤祐児, 小林啓介

    応用物理学会学術講演会講演予稿集　2006

  24. 高品質単結晶CVDダイヤモンド薄膜を用いた軟X線および紫外線検出器の特性評価

    松原弘, 毎田修, 寺地徳之, 斎藤祐児, 小林啓介, 伊藤利道

    真空に関する連合講演会講演予稿集　2006

  25. CVDダイヤモンド中の生成キャリアの制御とその紫外線検出器への応用

    山元貴, 松原弘, 毎田修, 寺地徳之, 伊藤利道

    真空に関する連合講演会講演予稿集　2006

  26. M-I-M型薄膜電子エミッタの作製とその特性

    小久保勇志, 毎田修, 寺地徳之, 伊藤利道

    真空に関する連合講演会講演予稿集　2006

  27. 高出力マイクロ波プラズマCVDによる高配向多結晶ダイヤモンド薄膜の高品質化の検討

    長谷川哲視, 野呂雅和, 毎田修, 寺地徳之, 伊藤利道

    真空に関する連合講演会講演予稿集　2006

  28. 高品質CVDダイヤモンドにおけるキャリア拡散の制御とその応用

    山元貴, 松原弘, 毎田修, 寺地徳之, 伊藤利道

    応用物理学会学術講演会講演予稿集　2006

  29. 高品質ホモエピタキシャルCVDダイヤモンド成長における成長前研磨処理及び基板表面ステップ密度依存性

    宮武秀宇, 有馬一也, 毎田修, 寺地徳之, 伊藤利道

    真空に関する連合講演会講演予稿集　2006

  30. 15pXE-2 Observation of interface states present at ultrathin silicon oxynitride dielectrics/Si interfaces by means of XPS measurement under bias

    Tanaka K., Kobayashi T., Okafuji A., Maida O., Kobayashi H.

    Meeting abstracts of the Physical Society of Japan　2004/08/25

  31. Observation of interface states present at ultrathin gate insulator/Si interfaces by means of XPS measurements under bias

    Tanaka K., Kobayashi T., Okafuji A., Maida O., Kobayashi H.

    Meeting abstracts of the Physical Society of Japan　2003/08/15

  32. Low temperature formation of SiO_2/Si structure by chemical method and a decrease in the leakage current density

    Asuha, Liu Yueh Ling, Inoue M., Maida O., Takahashi M., Kobayashi H.

    Meeting abstracts of the Physical Society of Japan　2003/03/06

  33. Leakage Current Density Decreasing of the MOS Structure by the Cyanide Treatment

    Maida Osamu, Asano Akira, Asuha, Kobayashi Hikaru

    Meeting abstracts of the Physical Society of Japan　2002/08/13

  34. Chemical species in silicon oxynitride layers formed with nitrogen plasma generated by low energy

    Takahashi Masao, Mizokuro Toshiko, Maida Osamu, Kobayashi Hikaru

    Meeting abstracts of the Physical Society of Japan　2002/08/13

  35. Atomic Density and Valence Band Structure of Ultra Thin SiO_2/Si Structure

    Maida Osamu, Asuha, Yuasa Toshiro, Takahashi Masao, Kobayashi Hikaru

    Meeting abstracts of the Physical Society of Japan　2001/09/03

  36. Decrease in the leakage current density and the property of ultrathin SiO_2 layers formed by chemical oxidation method

    Asuha, Yuasa T., Yoneda K., Maida O., Kobayashi H.

    Meeting abstracts of the Physical Society of Japan　2001/03/09

  37. Formation of flat Si/SiO_2 interface and reduction in leakage current density by use of catalytic activity of platinum

    Yuasa Toshiro, Asuha, Maida Osamu, Yoneda Kenji, Kobayashi Hikaru

    Meeting abstracts of the Physical Society of Japan　2001/03/09

  38. レーザーアブレーション法によるランタノイド酸化物ゲート膜の作製と評価

    北井聡, 上野正人, 毎田修, 金島岳, 奥山雅則

    応用物理学関係連合講演会講演予稿集　2001

  39. PTFEの軟X線アブレーションによる低誘電率薄膜の評価

    高馬悟覚, 毎田修, 奥本雅規, 金島岳, 奥山雅則, 大橋治彦

    応用物理学関係連合講演会講演予稿集　2001

  40. クラウンエーテルシアン処理によるSi/SiO2界面準位密度の低減

    浅野明, 毎田修, 毎田修, 高橋昌男, 高橋昌男, 西谷幹彦, 小林光, 小林光

    応用物理学会学術講演会講演予稿集　2001

  41. Preparation and Characterization of High-k ZrO2 Thin Film Deposited by Pulsed Laser Deposition.

    上野正人, 毎田修, 北井聡, 金島岳, 奥山雅則

    電子情報通信学会技術研究報告　2000

  42. Preparation of PTFE Low-k Thin Film Deposited by Soft X-ray Ablation.

    高馬悟覚, 毎田修, 奥本雅規, 上野正人, 北井聡, 金島岳, 奥山雅則, 大橋治彦

    電子情報通信学会技術研究報告　2000

  43. レーザーアブレーション法によるZrO2薄膜の製膜とその評価

    上野正人, 毎田修, 北井聡, 金島岳, 奥山雅則

    応用物理学会学術講演会講演予稿集　2000

  44. PTFEの軟X線アブレーションによる低誘電率薄膜の作製と評価

    高馬悟覚, 毎田修, 上野正人, 金島岳, 奥山雅則

    応用物理学会学術講演会講演予稿集　2000

  45. SPring-8アンジュレータを用いたSiO2膜の軟X線エッチング

    毎田修, 高馬悟覚, 金島岳, 和田秀夫, 阿形真司, 弓達新治, 奥山雅則, 大橋治彦

    応用物理学関係連合講演会講演予稿集　1999

  46. Electrical Characterization of Ultra Thin Photo-CVD SiO2 Film.

    毎田修, 金島岳, 奥山雅則

    応用物理学関係連合講演会講演予稿集　1998

  47. Electrical Characterization of Photo-CVD SiO2 Film Prepared on Atomically Flat Si Surface.

    山本英明, 毎田修, 金島岳, 奥山雅則

    応用物理学関係連合講演会講演予稿集　1997

  48. AFM observation of H-terminated Si surface exposed to the air.

    岡田規男, 毎田修, 金島岳, 奥山雅則

    応用物理学会学術講演会講演予稿集　1997

  49. Surface Treatment Effects of Microscopic Structure of Si(100) Surface and Si/SiO2 Interface States.

    山本英明, 毎田修, 金島岳, 奥山雅則

    応用物理学会学術講演会講演予稿集　1996

Institutional Repository 2

Content Published in the University of Osaka Institutional Repository (OUKA)

  1. Compressed Sensing EEG Measurement Technique with Normally Distributed Sampling Series

    Okabe Yuki, Kanemoto Daisuke, Maida Osamu, Hirose Tetsuya

    IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences　Vol. E105A　No. 10　p. 1429-1433　2022/10/01

  2. Image Quality Improvement for Capsule Endoscopy Based on Compressed Sensing with K-SVD Dictionary Learning

    Harada Yuuki, Kanemoto Daisuke, Inoue Takahiro, Maida Osamu, Hirose Tetsuya

    IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences　Vol. E105A　No. 4　p. 743-747　2022/04/01