Buried annealed proton-exchanged waveguide in periodically-poled MgO:LiTaO<inf>3</inf> fabricated by surface-activated bonding for high-power wavelength conversion

Ryosuke Noro, Masahide Okazaki, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 63　No. 6　2024/06/03　Research paper (scientific journal)

Demonstration of a violet-distributed feedback laser with fairly small temperature dependence in current-light characteristics

Toshihiko Fukamachi, Junichi Nishinaka, Koichi Naniwae, Shuichi Usuda, Haruki Fukai, Akihiko Sugitani, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Applied Physics Express　Vol. 17　No. 5　p. 052004-1-052004-5　2024/05/20　Research paper (scientific journal)

Fabrication of polarity inverted LiNbO₃/GaN channel waveguide by surface activated bonding for high-efficiency transverse quasi-phase-matched wavelength conversion

Ryosuke Noro, Mariko Adachi, Yasufumi Fujiwara, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 62　No. 10　p. 102001-1-102001-6　2023/10/03　Research paper (scientific journal)

Second harmonic generation from a-plane GaN vertical monolithic microcavity pumped with femtosecond laser

Tomoaki Nambu, Tomohiro Nakahara, Yuma Yasuda, Yasufumi Fujiwara, Masayoshi Tonouchi, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Applied Physics Express　Vol. 16　No. 7　p. 072005-1-072005-6　2023/07/12　Research paper (scientific journal)

229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide

Hiroto Honda, Soshi Umeda, Kanako Shojiki, Hideto Miyake, Shuhei Ichikawa, Jun Tatebayashi, Yasufumi Fujiwara, Kazunori Serita, Hironaru Murakami, Masayoshi Tonouchi, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Applied Physics Express　Vol. 16　No. 6　p. 062006-1-062006-4　2023/06/19　Research paper (scientific journal)

Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy

Tomotaka Murata, Kazuhisa Ikeda, Jun Yamasaki, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

physica status solidi (b)　Vol. 2023　p. 2200583-1-2200583-8　2023/03/22　Research paper (scientific journal)

Second harmonic generation in GaN transverse quasi-phase-matched waveguide pumped with femtosecond laser

Naoki Yokoyama, Yoshiki Morioka, Tomotaka Murata, Hiroto Honda, Kazunori Serita, Hironaru Murakami, Masayoshi Tonouchi, Shigeki Tokita, Shuhei Ichikawa, Yasufumi Fujiwara, Toshiki Hikosaka, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Applied Physics Express　Vol. 15　No. 10　p. 112002-1-112002-6　2022/10/17　Research paper (scientific journal)

DUV coherent light emission from ultracompact microcavity wavelength conversion device

Tomoaki Nambu, Taketo Yano, Soshi Umeda, Naoki Yokoyama, Hiroto Honda, Yasunori Tanaka, Yutaka Maegaki, Yusuke Mori, Masashi Yoshimura, Shuhei Kobayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Ryota Ishii, Yoichi Kawakami, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Optics Express　Vol. 30　No. 11　p. 18628-1-18628-10　2022/05/12　Research paper (scientific journal)

GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion

Naoki Yokoyama, Ryo Tanabe, Yuma Yasuda, Hiroto Honda, Shuhei Ichikawa, Yasufumi Fujiwara, Toshiki Hikosaka, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 61　No. 5　p. 050902-1-050902-6　2022/02/22　Research paper (scientific journal)

Monolithic microcavity second harmonic generation device using low birefringence paraelectric material without polarity-inverted structure

Tomoaki Nambu, Takumi Nagata, Soshi Umeda, Keishi Shiomi, Yasufumi Fujiwara, Toshiki Hikosaka, Abdul Mannan, Filchito Renee G. Bagsican, Kazunori Serita, Iwao Kawayama, Masayoshi Tonouchi, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Applied Physics Express　Vol. 14　No. 6　p. 061004-061004　2021/06/01　Research paper (scientific journal)

Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping

Mayuko Tsukakoshi, Tomoyuki Tanikawa, Takumi Yamada, Masayuki Imanishi, Yusuke Mori, Masahiro Uemukai, Ryuji Katayama

Applied Physics Express　Vol. 14　No. 5　p. 055504-055504　2021/05/01　Research paper (scientific journal)

Polarity inversion of aluminum nitride by direct wafer bonding

Yusuke Hayashi, Ryuji Katayama, Toru Akiyama, Tomonori Ito, Hideto Miyake

Applied Physics Express　Vol. 11　No. 3　p. 031003-1-031003-4　2018/03　Research paper (scientific journal)

Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations

Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano

Applied Physics Express　Vol. 10　No. 8　p. 082101-1-082101-4　2017/08　Research paper (scientific journal)

Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000(1)over-bar) p-type GaN grown by metalorganic vapor phase epitaxy

Ryohei Nonoda, Kanako Shojiki, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 55　No. 5　p. 05FE01-1-05FE01-4　2016/05　Research paper (scientific journal)

Modulation spectroscopic investigation on lattice polarity of gallium nitride

Ryuji Katayama, Kentaro Onabe, Hiroyuki Yaguchi, Tomonori Matsushita, Takashi Kondo

Applied Physics Letters　Vol. 91　No. 6　2007/08/09　Research paper (scientific journal)

Fabrication of lateral lattice-polarity-inverted GaN heterostructure

Ryuji Katayama, Yoshihiro Kuge, Takashi Kondo, Kentaro Onabe

Journal of Crystal Growth　Vol. 301-302　p. 447-451　2007/04　Research paper (scientific journal)

Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

Ryuji Katayama, Yoshihiro Kuge, Kentaro Onabe, Tomonori Matsushita, Takashi Kondo

Applied Physics Letters　Vol. 89　No. 23　p. 231910-1-231910-3　2006/12/05　Research paper (scientific journal)

Buffer design for nitrogen polarity GaN on sapphire (0001) by RF-MBE and application to the nanostructure formation using KOH etching

Ryuji Katayama, Kentaro Onabe

Physica E: Low-dimensional Systems and Nanostructures　Vol. 32　No. 1-2　p. 245-248　2006/02/07　Research paper (scientific journal)

Built-in electric field at cubic GaN/GaAs(001) heterointerfaces investigated by phase-selected photoreflectance excitation

Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki

physica status solidi (b)　Vol. 241　No. 12　p. 2749-2753　2004/09/14　Research paper (scientific journal)

Electrically biased photoreflectance study of cubic GaN/GaAs(001) heterointerface

Ryuji Katayama, Masayuki Kuroda, Kentaro Onabe, Yasuhiro Shiraki

physica status solidi (c)　Vol. 0　No. 7　p. 2597-2601　2003/10/20　Research paper (scientific journal)

Photoconductivity and Electroreflectance Study of Cubic GaN/GaAs(001) Heterostructures by Optical-Biasing Technique

R. Katayama, M. Kuroda, K. Onabe, Y. Shiraki

physica status solidi (b)　Vol. 234　No. 3　p. 877-81　2002/12/03　Research paper (scientific journal)

Optically-Biased Photoconductivity Spectrum Measurements of Cubic GaN/GaAs(001) Heterostructures

R Katayama, M Kobayakawa, A Nagayama, J Wu, K Onabe, Y Shiraki

Compound Semiconductors　Vol. 170　p. 725-730　2002/01　Research paper (scientific journal)

Design and Fabrication of Organic Waveguiding Devices for Quasi-Phase-Matched Second-Harmonic Generation

E. Nishina, R. Katayama, T. Kondo, R. Ito, J.C. Kim, T. Watanabe, S. Miyata

Nonlinear Optics　Vol. 22　p. 433-436　1999/01　Research paper (scientific journal)

Investigation of characteristics of GaN-based blue DFB laser diodes over a wide detuning range

Toshihiko Fukamachi, Junichi Nishinaka, Kohei Miyoshi, Koichi Naniwae, Shuichi Usuda, Haruki Fukai, Akihiko Sugitani, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 64　No. 5　p. 052001-1-052001-8　2025/05/16　Research paper (scientific journal)

Epitaxial Growth of AlGaN/AlN Strained-Layer Superlattices by Metalorganic Vapor Phase Epitaxy for Far-UV Second Harmonic Generation

Shahzeb Malik, Masaaki Ito, Hiroto Honda, Ryosuke Noro, Kanako Shojiki, Hideto Miyake, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Crystal Growth &amp; Design　Vol. 25　No. 10　p. 3266-3273　2025/05/07　Research paper (scientific journal)

Polarity inversion of N-polar GaN by metalorganic vapor phase epitaxy via thermal oxidation

Kazuhisa Ikeda, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 64　No. 2　p. 020903-1-020903-6　2025/02/12　Research paper (scientific journal)

Polarity inversion of GaN from +c to −c polarity by metalorganic vapor phase epitaxy

Kazuhisa Ikeda, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 64　No. 2　p. 020901-1-020901-5　2025/02/03　Research paper (scientific journal)

Detuning dependence in current-light-output characteristics of GaN-based DFB laser diodes

Toshihiko Fukamachi, Junichi Nishinaka, Koichi Naniwae, Shuichi Usuda, Haruki Fukai, Akihiko Sugitani, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 64　No. 2　p. 022001-1-022001-10　2025/02/03　Research paper (scientific journal)

Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device

Kazuhisa Ikeda, Shahzeb Malik, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

physica status solidi (b)　Vol. 261　No. 11　p. 2400161-1-2400161-9　2024/09/09　Research paper (scientific journal)

Large Area Epitaxial Lateral Overgrowth of Semipolar (1(Formula Presented)01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography

Naofumi Takeda, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Physica Status Solidi (B) Basic Research　Vol. 2024　p. 2400071-1-2400071-6　2024/06/21　Research paper (scientific journal)

Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks

Tomoka Nishikawa, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 62　No. 3　p. SF1015-1-SF1015-7　2023/03/31　Research paper (scientific journal)

Enlargement of mode size in annealed proton-exchanged periodically-poled MgO doped stoichiometric LiTaO₃ waveguide for high power second harmonic generation

Ryosuke Noro, Masahide Okazaki, Ikuo Mizobata, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 61　No. 7　p. 072006-1-072006-6　2022/07/05　Research paper (scientific journal)

Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals

Hiroki Ishihara, Keiya Shimada, Soshi Umeda, Naoki Yokoyama, Hiroto Honda, Kazuhiro Kurose, Yoshimasa Kawata, Atsushi Sugita, Yoku Inoue, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama, Takayuki Nakano

Japanese Journal of Applied Physics　Vol. 61　No. 6　p. SK1020-1-SK1020-7　2022/06/24　Research paper (scientific journal)

Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows

Shin Yoshida, Kanako Shojiki, Hideto Miyake, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

Japanese Journal of Applied Physics　Vol. 61　No. 3　p. 030904-030904　2022/03/01　Research paper (scientific journal)

Dependence of the V/III Ratio on Indium Incorporation in InGaN Films Grown by Metalorganic Vapour Phase Epitaxy

V. Suresh Kumar, Shiyang Ji, Yuantao Zhang, Kanako Shojiki, Jung Hun Choi, Takeshi Kimura, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Journal of Nanoscience and Nanotechnology　Vol. 20　No. 5　p. 2979-2986　2020/05/01　Research paper (scientific journal)

Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells

Kengo Takamiya, Shuhei Yagi, Hiroyuki Yaguchi, Hidefumi Akiyama, Kanako Shojiki, Tomoyuki Tanikawa, Ryuji Katayama

Physica Status Solidi (B) Basic Research　Vol. 255　No. 5　2018/05　Research paper (scientific journal)

Fabrication of Cu2ZnSnS4 thin films using a Cu-Zn-Sn-O amorphous precursor and supercritical fluid sulfurization

Yuta Nakayasu, Takaaki Tomai, Nobuto Oka, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Liwen Sang, Masatomo Sumiya, Itaru Honma

THIN SOLID FILMS　Vol. 638　p. 244-250　2017/09　Research paper (scientific journal)

Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO₄(0001) substrate with millimeter-scale wide terraces

Takuya Iwabuchi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Tsuguo Fukuda, Takashi Matsuoka

physica status solidi (a)　Vol. 214　No. 9　p. 1600754-1-1600754-8　2016/12/27　Research paper (scientific journal)

Nanometer scale fabrication and optical response of InGaN/GaN quantum disks

Yi-Chun Lai, Akio Higo, Takayuki Kiba, Cedric Thomas, Shula Chen, Chang Yong Lee, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Kanako Shojiki, Junichi Takayama, Ichiro Yamashita, Akihiro Murayama, Gou-Chung Chi, Peichen Yu, Seiji Samukawa

Nanotechnology　Vol. 27　No. 42　p. 425401-1-425401-5　2016/09/15　Research paper (scientific journal)

Homogeneity improvement of N-polar InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane

Kanako Shojiki, Takashi Hanada, Tomoyuki Tanikawa, Yasuhiko Imai, Shigeru Kimura, Ryohei Nonoda, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka

Japanese Journal of Applied Physics　Vol. 55　No. 5S　p. 05FA09-1-05FA09-8　2016/04/13　Research paper (scientific journal)

Electrical characteristics of N-polar (000(1)over-bar) p-type GaN Schottky contacts

Toshichika Aoki, Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka, Kenji Shiojima

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 55　No. 4　p. 04EJ09-1-04EJ09-5　2016/04　Research paper (scientific journal)

Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

Jinyeop Yoo, Kanako Shojiki, Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Japanese Journal of Applied Physics　Vol. 55　No. 5S　p. 05FA04-1-05FA04-5　2016/03/31　Research paper (scientific journal)

Large Stokes-like shift in N-polar InGaN/GaN multiple-quantum-well light-emitting diodes

Tomoyuki Tanikawa, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka

Japanese Journal of Applied Physics　Vol. 55　No. 5S　p. 05FJ03-1-05FJ03-4　2016/03/30　Research paper (scientific journal)

MOVPE Growth of N-polar GaN/AlxGa1-xN/GaN Heterostructure on Small Off-cut Substrate for Flat Interface

K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)　2016　Research paper (international conference proceedings)

Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

Kanako Shojiki, Tomoyuki Tanikawa, Jung-Hun Choi, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Applied Physics Express　Vol. 8　No. 6　p. 061005-1-061005-4　2015/06/04　Research paper (scientific journal)

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

Kanako Shojiki, Jung-Hun Choi, Takuya Iwabuchi, Noritaka Usami, Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Applied Physics Letters　Vol. 106　No. 22　p. 222102-1-222102-4　2015/06/03　Research paper (scientific journal)

Fabrication of InGaN/GaN Nanodisk Structure by using Bio-template and Neutral Beam Etching Process

Yi-Chun Lai, Akio Higo, Chang Yong Lee, Cedric Thomas, Tomoyuki Tanikawa, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Takayuki Kiba, Peichen Yu, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)　p. 1278-1281　2015　Research paper (international conference proceedings)

Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-Incorporation Into InGaN Grown by Metalorganic Vapor Phase Epitaxy

Jung-Hun Choi, Kanako Shojiki, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Journal of Nanoscience and Nanotechnology　Vol. 14　No. 8　p. 6112-6115　2014/08/01　Research paper (scientific journal)

Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

Takashi Aisaka, Tomoyuki Tanikawa, Takeshi Kimura, Kanako Shojiki, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Japanese Journal of Applied Physics　Vol. 53　No. 8　p. 085501-1-085501-4　2014/07/09　Research paper (scientific journal)

Effect ofc-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN

Kanako Shojiki, Jung-Hun Choi, Hirofumi Shindo, Takeshi Kimura, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Japanese Journal of Applied Physics　Vol. 53　No. 5S1　p. 05FL07-1-05FL07-5　2014/04/14　Research paper (scientific journal)

Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar GaN/sapphire

Tomoyuki Tanikawa, Kanako Shojiki, Takashi Aisaka, Takeshi Kimura, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Japanese Journal of Applied Physics　Vol. 53　No. 5S1　p. 05FL05-1-05FL05-4　2014/04/07　Research paper (scientific journal)

Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy

Yuantao Zhang, Takeshi Kimura, Kiattiwut Prasertusk, Takuya Iwabuchi, Suresh Kumar, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka

Thin Solid Films　Vol. 536　p. 152-155　2013/04/17　Research paper (scientific journal)

Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE

Jung‐Hun Choi, Kanako Shojiki, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

physica status solidi (c)　Vol. 10　No. 3　p. 417-420　2013/02/07　Research paper (scientific journal)

AlGaN/GaN MIS‐gate HEMTs with SiCN gate stacks

Kengo Kobayashi, Masaki Kano, Tomohiro Yoshida, Ryuji Katayama, Takashi Matsuoka, Taiichi Otsuji, Tetsuya Suemitsu

physica status solidi (c)　Vol. 10　No. 5　p. 790-793　2013/02/06　Research paper (scientific journal)

RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer

Masahiro Kakuda, Sei Morikawa, Shigeyuki Kuboya, Ryuji Katayama, Hiroyuki Yaguchi, Kentaro Onabe

Journal of Crystal Growth　Vol. 378　p. 307-309　2013/01/16　Research paper (scientific journal)

Growth Temperature Dependence of Phase Purity in InN Grown by Pressurized Reactor MOVPE

T. Kimura, Y. H. Liu, Y. T. Zhang, K. Prasertsuk, J. G. Kim, N. Hasuike, H. Harima, R. Katayama, T. Matsuoka

J. Appl. Phys　2013　Research paper (scientific journal)

Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates

Ri Guo Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

Journal of Crystal Growth　Vol. 378　p. 85-87　2012/12/31　Research paper (scientific journal)

Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen $\delta$-Doped GaAs

Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

Applied Physics Express　Vol. 5　No. 11　p. 111201-1-111201-3　2012/10/25　Research paper (scientific journal)

Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

Takuya Iwabuchi, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Kiattiwut Prasertsuk, Haruna Watanabe, Noritaka Usami, Ryuji Katayama, Takashi Matsuoka

Japanese Journal of Applied Physics　Vol. 51　No. 4S　p. 04DH02-1-04DH02-4　2012/04/20　Research paper (scientific journal)

Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy

Kanako Shojiki, Takashi Hanada, Takaaki Shimada, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka

Japanese Journal of Applied Physics　Vol. 51　No. 4S　p. 04DH01-1-04DH01-4　2012/04/20　Research paper (scientific journal)

Effect of Nitridation on Indium-Composition of InGaN Films

Jung Hun Choi, Suresh Kumar, Shi Yang Ji, Shojiki Kanako, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Key Engineering Materials　Vol. 508　p. 193-198　2012/03　Research paper (scientific journal)

Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure

Kentaro Watanabe, Masakazu Ichikawa, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe

Journal of Vacuum Science &amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena　Vol. 30　No. 2　p. 021802-1-021802-6　2012/02/13　Research paper (scientific journal)

Phase diagram on phase purity of InN grown pressurized‐reactor MOVPE

Takeshi Kimura, Kiattiwut Prasertsuk, Yuantao Zhang, Yuhuai Liu, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

physica status solidi (c)　Vol. 9　No. 3-4　p. 654-657　2012/02/03　Research paper (scientific journal)

Relationship between residual carrier density and phase purity in InN grown by pressurized‐reactor MOVPE

Kiattiwut Prasertsuk, Masaki Hirata, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Takuya Iwabuchi, Ryuji Katayama, Takashi Matsuoka

physica status solidi c　Vol. 9　No. 3-4　p. 681-684　2012/01/25　Research paper (scientific journal)

Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide

Kengo Takamiya, Yuta Endo, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

Materials Science Forum　Vol. 706-709　p. 2916-2921　2012/01　Research paper (scientific journal)

Development of Novel System Combining Scanning Tunneling Microscope-Based Cathodoluminescence and Electroluminescence Nanospectroscopies

Kentaro Watanabe, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe, Masakazu Ichikawa

Japanese Journal of Applied Physics　Vol. 50　No. 8S3　p. 08LB18-1-08LB18-4　2011/08/22　Research paper (scientific journal)

Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE

Shigeyuki Kuboya, Masayuki Kuroda, Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 323　No. 1　p. 26-29　2010/12/14　Research paper (scientific journal)

Effect of growth temperature on structure properties of InN grown by pressurized‐reactor metalorganic vapor phase epitaxy

Yuantao Zhang, Yuhuai Liu, Takeshi Kimura, Masaki Hirata, Kiattiwut Prasertusk, Shiyang Ji, Ryuji Katayama, Takashi Matsuoka

physica status solidi (c)　Vol. 8　No. 2　p. 482-484　2010/12/01　Research paper (scientific journal)

Lateral patterning of GaN polarity using wet etching process

Yujiro Fukuhara, Ryuji Katayama, Kentaro Onabe

physica status solidi (c)　Vol. 7　No. 7-8　p. 1922-1924　2010/06/09　Research paper (scientific journal)

MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAs

Pawinee Klangtakai, Sakuntam Sanorpim, Ryuji Katayama, Kentaro Onabe

physica status solidi (a)　Vol. 207　No. 6　p. 1418-1420　2010/05/17　Research paper (scientific journal)

MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

Dares Kaewket, Sakuntam Sanorpim, Sukkaneste Tungasmita, Ryuji Katayama, Kentaro Onabe

physica status solidi c　Vol. 7　No. 7-8　p. 2079-2081　2010/05/12　Research paper (scientific journal)

Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate

Sakuntam Sanorpim, Ryuji Katayama, Kentaro Onabe, Noritaka Usami, Kazuo Nakajima

Japanese Journal of Applied Physics　Vol. 49　No. 4R　p. 040202-1-040202-3　2010/04/05　Research paper (scientific journal)

Photoreflectance Study of Strained GaAsN/GaAs T-junction Quantum Wires Grown by MOVPE

Pawinee Klangtakai, Sakuntam Sanorpim, Ryuji Katayama, Kentaro Onabe

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2　p. 402-+　2010　Research paper (international conference proceedings)

Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A

T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe

Physica E: Low-dimensional Systems and Nanostructures　Vol. 42　No. 10　p. 2529-2531　2009/12/16　Research paper (scientific journal)

Band alignment of lattice-matched InGaPN/GaAs and GaAs/InGaPN quantum wells grown by MOVPE

Dares Kaewket, Sakuntam Sanorpim, Sukkaneste Tungasmita, Ryuji Katayama, Kentaro Onabe

Physica E: Low-dimensional Systems and Nanostructures　Vol. 42　No. 4　p. 1176-1179　2009/12/06　Research paper (scientific journal)

Photoluminescence Study of Type-II InGaPN/GaAs Quantum Wells

Dares Kaewket, Sakuntam Sanorpim, Sukkaneste Tungasmita, Ryuji Katayama, Kentaro Onabe

Journal of Nanoscience and Nanotechnology　Vol. 10　No. 11　p. 7154-7157　2009/10/30　Research paper (scientific journal)

Scanning tunneling microscope–cathodoluminescence measurement of the GaAs/AlGaAs heterostructure

Kentaro Watanabe, Yoshiaki Nakamura, Masakazu Ichikawa, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe

Journal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena　Vol. 27　No. 4　p. 1874-1880　2009/06/29　Research paper (scientific journal)

Metastable cubic InN layers on GaAs (001) substrates grown by MBE: Growth condition and crystal structure

Sakuntam Sanorpim, Papaporn Jantawongrit, Sman Kuntharin, Chanchana Thanachayanont, Teruyuki Nakamura, Ryuji Katayama, Kentaro Onabe

physica status solidi (c)　Vol. 6　No. S2　p. S376-S380　2009/05/08　Research paper (scientific journal)

MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor

Quang Tu Thieu, Yuki Seki, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 311　No. 10　p. 2802-2805　2009/01/13　Research paper (scientific journal)

InGaPN/GaP Lattice-Matched Single Quantum Wells on GaP (001) Grown by MOVPE

D. Kaewket, S. Sanorpim, Sukkaneste Tungasmita, R. Katayama, Kentaro Onabe

Advanced Materials Research　Vol. 55-57　p. 821-824　2008/08　Research paper (scientific journal)

Effect of Substrate-Surface Orientation on the N Incorporation in GaAsN Films on GaAs Grown by MOVPE

P. Klangtakai, S. Sanorpim, S. Kuboya, R. Katayama, Kentaro Onabe

Advanced Materials Research　Vol. 55-57　p. 825-828　2008/08　Research paper (scientific journal)

Incorporation of N in high N‐content GaAsN films investigated by Raman scattering

S. Sanorpim, P. Panpech, S. Vijarnwannaluk, F. Nakajima, S. Kuboya, R. Katayama, K. Onabe

physica status solidi (c)　Vol. 5　No. 9　p. 2923-2925　2008/06/05　Research paper (scientific journal)

Electrical conduction in cubic GaN films grown on GaAs(001) by RF‐MBE

Masatoshi Kohno, Teruyuki Nakamura, Takahiro Kataoka, Ryuji Katayama, Kentaro Onabe

physica status solidi (c)　Vol. 5　No. 6　p. 1805-1807　2008/04/25　Research paper (scientific journal)

MOVPE growth and photoluminescence properties of InAsN QDs

Shigeyuki Kuboya, Shun Takahashi, Quan Tu. Thieu, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe

physica status solidi (c)　Vol. 5　No. 6　p. 1715-1718　2008/04/17　Research paper (scientific journal)

RF‐MBE growth of cubic InN films on YSZ(001) vicinal substrates

Teruyuki Nakamura, Takahiro Kataoka, Ryuji Katayama, Takahisa Yamamoto, Kentaro Onabe

physica status solidi (c)　Vol. 5　No. 6　p. 1712-1714　2008/04/17　Research paper (scientific journal)

Band gap energy fluctuations in InGaN films grown by RF‐MBE with changing nitrogen supply rate investigated by a piezoelectric photothermal spectroscopy

Hironori Komaki, Takashi Shimohara, K. Sakai, Ryuji Katayama, Kentaro Onabe, Atsushi Fukuyama, Tetsuo Ikari

physica status solidi (c)　Vol. 5　No. 2　p. 499-502　2007/12/18　Research paper (scientific journal)

Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE

S. Sanorpim, D. Kaewket, Sukkaneste Tungasmita, R. Katayama, Kentaro Onabe

Advanced Materials Research　Vol. 31　p. 224-226　2007/11　Research paper (scientific journal)

A Comparison of the Structural Quality of High-In Content InGaAsN Films Grown on InGaAs Pseudosubstrate and on GaAs Substrate

S. Sanorpim, P. Kongjaeng, R. Katayama, Kentaro Onabe

Advanced Materials Research　Vol. 31　p. 221-223　2007/11　Research paper (scientific journal)

MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission

Sakuntam Sanorpim, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe

Advanced Materials Research　Vol. 31　p. 218-220　2007/11　Research paper (scientific journal)

Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions

Sman Kuntharin, Sakuntam Sanorpim, Teruyuki Nakamura, Ryuji Katayama, Kentaro Onabe

Advanced Materials Research　Vol. 31　p. 215-217　2007/11　Research paper (scientific journal)

Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs

Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, F. Nakajima, R. Katayama, K. Onabe

Physica E: Low-dimensional Systems and Nanostructures　Vol. 40　No. 6　p. 2110-2112　2007/10/24　Research paper (scientific journal)

InAsN quantum dots grown on GaAs(001) substrates by MOVPE

S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe

physica status solidi c　Vol. 4　No. 7　p. 2387-2390　2007/05/31　Research paper (scientific journal)

Structural and optical characterization of high In content cubic InGaN on GaAs(001) substrates by RF‐MBE

Teruyuki Nakamura, Yuta Endo, Ryuji Katayama, Hiroyuki Yaguchi, Kentaro Onabe

physica status solidi (c)　Vol. 4　No. 7　p. 2437-2440　2007/05/31　Research paper (scientific journal)

Structural transition control of laterally overgrown c-GaN and h-GaN on stripe-patterned GaAs (001) substrates by MOVPE

S. Sanorpim, E. Takuma, H. Ichinose, R. Katayama, K. Onabe

physica status solidi (b)　Vol. 244　No. 6　p. 1769-1774　2007/05/03　Research paper (scientific journal)

Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBE

Hironori Komaki, Teruyuki Nakamura, Ryuji Katayama, Kentaro Onabe, Masashi Ozeki, Tetsuo Ikari

Journal of Crystal Growth　Vol. 301-302　p. 473-477　2007/04　Research paper (scientific journal)

RF–MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substrates

Teruyuki Nakamura, Yuki Tokumoto, Ryuji Katayama, Takahisa Yamamoto, Kentaro Onabe

Journal of Crystal Growth　Vol. 301-302　p. 508-512　2007/03/07　Research paper (scientific journal)

Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE

Hironori Komaki, Ryuji Katayama, Kentaro Onabe, Masashi Ozeki, Tetsuo Ikari

Journal of Crystal Growth　Vol. 305　No. 1　p. 12-18　2007/03/07　Research paper (scientific journal)

Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates

H P Hsu, P Y Wu, Y S Huang, S Sanorpim, K K Tiong, R Katayama, K Onabe

Journal of Physics: Condensed Matter　Vol. 19　No. 9　p. 096009-1--8　2007/02/12　Research paper (scientific journal)

Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation

Pawinee Klangtakai, Sakuntam Sanorpim, Kajornyod Yoodee, Wataru Ono, Fumio Nakajima, Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 298　p. 140-144　2007/01　Research paper (scientific journal)

Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy

Sakuntam Sanorpim, Fumihiro Nakajima, Nobuhiro Nakadan, Tokuharu Kimura, Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 298　p. 150-153　2007/01　Research paper (scientific journal)

MOVPE growth and optical characterization of GaPN films using tertiarybutylphosphine (TBP) and 1,1-dimethylhydrazine (DMHy)

Fumihiro Nakajima, Wataru Ono, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 298　p. 103-106　2007/01　Research paper (scientific journal)

Shutterless nitrogen flux modulation using a dual-mode rf-plasma operation during RF-MBE growth of GaN

Ryuji Katayama, Hideyo Tsurusawa, Teruyuki Nakamura, Hironori Komaki, Kentaro Onabe

physica status solidi (a)　Vol. 204　No. 1　p. 277-281　2007/01　Research paper (scientific journal)

Characterization of MOVPE grown GaAs1-xNx/GaAs multiple quantum wells emitting around 1.3-mu m-wavelength region

P. Klangtakai, S. Sanorpim, K. Yoodee, W. Ono, F. Nakajima, R. Katayama, K. Onabe

2007 2ND IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3　p. 435-+　2007　Research paper (international conference proceedings)

Visible photoluminescence from InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE

D. Kaewket, S. Tungasmita, S. Sanorpim, R. Katayama, K. Onabe

2007 2ND IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3　p. 429-+　2007　Research paper (international conference proceedings)

Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE

Dares Kaewket, Sukkaneste Tungasmita, Sakuntam Sanorpim, Fumihiro Nakajima, Nobuhiro Nakadan, Tokuharu Kimura, Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 298　p. 531-535　2006/12/20　Research paper (scientific journal)

Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, W. Ono, F. Nakajima, R. Katayama, K. Onabe

Journal of Crystal Growth　Vol. 298　p. 73-75　2006/12/18　Research paper (scientific journal)

Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy

Pornsiri Kongjaeng, Sakuntam Sanorpim, Takahisa Yamamoto, Wataru Ono, Fumio Nakajima, Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 298　p. 111-115　2006/12/06　Research paper (scientific journal)

MOVPE and characterization of InAsN/GaAs multiple quantum wells

S. Kuboya, Q.T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe

Journal of Crystal Growth　Vol. 298　p. 544-547　2006/11/29　Research paper (scientific journal)

Substrate-surface orientation dependence of N content in MOVPE growth of GaAsN films on GaAs

W. Ono, F. Nakajima, S. Sanorpim, R. Katayama, K. Onabe

Journal of Crystal Growth　Vol. 298　p. 135-139　2006/11/22　Research paper (scientific journal)

Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE

P. Panpech, S. Vijarnwannaluk, S. Sanorpim, W. Ono, F. Nakajima, R. Katayama, K. Onabe

Journal of Crystal Growth　Vol. 298　p. 107-110　2006/11/20　Research paper (scientific journal)

Growth and optical characterization of InAsN quantum dots

Hideyo Tsurusawa, Atsushi Nishikawa, Ryuji Katayama, Kentaro Onabe

physica status solidi (b)　Vol. 243　No. 7　p. 1657-1660　2006/06/09　Research paper (scientific journal)

MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer

Shigeyuki Kuboya, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe

physica status solidi (b)　Vol. 243　No. 7　p. 1411-1415　2006/06/09　Research paper (scientific journal)

RF-MBE growth and structural characterization of cubic InN films on GaAs

T. Nakamura, K. Iida, R. Katayama, T. Yamamoto, K. Onabe

physica status solidi (b)　Vol. 243　No. 7　p. 1451-1455　2006/06/09　Research paper (scientific journal)

Piezoelectric Photothermal and Photoreflectance Spectra of In_xGa_1-xN Grown by Radio-Frequency Molecular Beam Epitaxy

Eiki Kawano, Yuki Uchibori, Takashi Shimohara, Hironori Komaki, Ryuji Katayama, Kentaro Onabe, Atsuhiko Fukuyama, Tetsuo Ikari

Japanese Journal of Applied Physics　Vol. 45　No. 5B　p. 4601-4603　2006/05/25　Research paper (scientific journal)

High-nitrogen-content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHy

Sakuntam Sanorpim, Fumihiro Nakajima, Wataru Ono, Ryuji Katayama, Kentaro Onabe

physica status solidi (a)　Vol. 203　No. 7　p. 1612-1617　2006/05/22　Research paper (scientific journal)

MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations

F. Nakajima, S. Sanorpim, W. Ono, R. Katayama, K. Onabe

physica status solidi (a)　Vol. 203　No. 7　p. 1641-1644　2006/05/22　Research paper (scientific journal)

Fabrication of cubic and hexagonal GaN micro-crystals on GaAs(0 0 1) substrates with relatively thin low-temperature GaN buffer layer

Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 278　No. 1-4　p. 431-436　2005/05　Research paper (scientific journal)

Growth and characterization of InAsN alloy films and quantum wells

Masayuki Kuroda, Atsushi Nishikawa, Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 278　No. 1-4　p. 254-258　2005/03/02　Research paper (scientific journal)

Excitation power dependent photoluminescence of In0.7Ga0.3As1−xNx quantum dots grown on GaAs (001)

A. Nishikawa, R. Katayama, K. Onabe, Y.G. Hong, C.W. Tu

Journal of Crystal Growth　Vol. 278　No. 1-4　p. 244-248　2005/01/23　Research paper (scientific journal)

Growth mechanism and structural characterization of hexagonal GaN films grown on cubic GaN (111)/GaAs (111)B substrates by MOVPE

Sakuntam Sanorpim, Ryuji Katayama, Kajornyod Yoodee, Kentaro Onabe

Journal of Crystal Growth　Vol. 275　No. 1-2　p. e1023-e1027　2004/12/20　Research paper (scientific journal)

MOVPE growth and optical investigations of InGaPN alloys

Sakuntam Sanorpim, Fumihiro Nakajima, Nobuhiro Nakadan, Tokuharu Kimura, Ryuji Katayama, Kentaro Onabe

Journal of Crystal Growth　Vol. 275　No. 1-2　p. e1017-e1021　2004/12/15　Research paper (scientific journal)

Optical characterization of InAsN single quantum wells grown by RF-MBE

Masayuki Kuroda, Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki

physica status solidi (b)　Vol. 241　No. 12　p. 2791-2794　2004/09/14　Research paper (scientific journal)

Highly luminescent cubic GaN microcrystals grown on GaAs(001) substrates by RF-MBE

Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki

physica status solidi (b)　Vol. 241　No. 12　p. 2739-2743　2004/09/14　Research paper (scientific journal)

Microstructures, defects, and localization luminescence in InGaAsN alloy films

F. Nakajima, S. Sanorpim, T. Yamamoto, E. Takuma, R. Katayama, H. Ichinose, K. Onabe, Y. Shiraki

physica status solidi (c)　No. 7　p. 2778-2781　2003/11/14　Research paper (scientific journal)

Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF‐MBE

M. Kuroda, R. Katayama, S. Nishio, K. Onabe, Y. Shiraki

physica status solidi (c)　Vol. 0　No. 7　p. 2765-2768　2003/11/12　Research paper (scientific journal)

MOVPE growth and characterization of high‐N content InGaPN alloy lattice‐matched to GaP

S. Sanorpim, F. Nakajima, R. Katayama, N. Nakadan, T. Kimura, K. Onabe, Y. Shiraki

physica status solidi (c)　Vol. 0　No. 7　p. 2773-2777　2003/11/12　Research paper (scientific journal)

Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer

S. Sanorpim, E. Takuma, R. Katayama, H. Ichinose, K. Onabe, Y. Shiraki

physica status solidi (b)　Vol. 240　No. 2　p. 305-309　2003/11/07　Research paper (scientific journal)

RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer

Susumu Nishio, Atsushi Nishikawa, Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki

Journal of Crystal Growth　Vol. 251　No. 1-4　p. 422-426　2003/04　Research paper (scientific journal)

MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (001)

Atsushi Nishikawa, Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki

Journal of Crystal Growth　Vol. 251　No. 1-4　p. 427-431　2003/04　Research paper (scientific journal)

The compositional and optical characterizations of InGaAsN alloy semiconductor grown by MOVPE

S Sanorpim, F Nakajima, R Katayama, K Onabe, Y Shiraki

PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS　Vol. 744　p. 665-670　2003　Research paper (international conference proceedings)

Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPE

S. Sanorpim, F. Nakajima, S. Imura, R. Katayama, J. Wu, K. Onabe, Y. Shiraki

physica status solidi (b)　Vol. 234　p. 782-786　2002/12/03　Research paper (scientific journal)

Reduction of Planar Defect Density in Laterally Overgrown Cubic-GaN on Patterned GaAs(001) Substrates by MOVPE

S. Sanorpim, E. Takuma, R. Katayama, K. Onabe, H. Ichinose, Y. Shiraki

physica status solidi (b)　Vol. 234　No. 3　p. 840-844　2002/12/03　Research paper (scientific journal)

Structural Study on Stacking Faults in GaN/GaAs (001) Heterostructures

A Nagayama, H Sawada, E Takuma, R Katayama, K Onabe, H Ichinose, Y Shiraki

Compound Semiconductors　Vol. 170　p. 749-730　2002/01　Research paper (scientific journal)

Cubic-GaN Films on GaAs(001) Substrates without Deep-Level Luminescence Grown by Metalorganic Vapor Phase Epitaxy

K. Onabe, J. Wu, R. Katayama, F.H. Zhao, A. Nagayama, Y. Shiraki

physica status solidi (a)　Vol. 180　No. 1　p. 15-19　2000/07/21　Research paper (scientific journal)

Substrate Misorientation Dependence of the Hexagonal Phase Inclusion in Cubic GaN Films Grown by Metalorganic Vapor Phase Epitaxy

A. Nagayama, R. Katayama, N. Nakadan, K. Miwa, H. Yaguchi, J. Wu, K. Onabe, Y. Shiraki

physica status solidi (a)　Vol. 176　No. 1　p. 513-517　1999/11/22　Research paper (scientific journal)