Atmospheric-pressure low-temperature plasma processes for thin film deposition

Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films　Vol. 32　No. 3　p. 030801-030801　2014/05　Research paper (scientific journal)

Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, W. Lin, K. Yasutake

Surface and Coatings Technology　Vol. 234　p. 2-7　2013/07　Research paper (scientific journal)

Study on the growth of microcrystalline silicon films in atmospheric-pressure VHF plasma using porous carbon electrode

H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, K. Yasutake

Journal of Physics: Conference Series　Vol. 417　No. 1　2013　Research paper (international conference proceedings)

Silicon Oxide Coatings with Very High Rates (> 10 nm/s) by Hexamethyldisiloxane-Oxygen Fed Atmospheric-Pressure VHF Plasma: Film-Forming Behavior Using Cylindrical Rotary Electrode

Hiroaki Kakiuchi, Hiromasa Ohmi, Takahiro Yamada, Keiji Yokoyama, Kohei Okamura, Kiyoshi Yasutake

PLASMA CHEMISTRY AND PLASMA PROCESSING　Vol. 32　No. 3　p. 533-545　2012/03　Research paper (scientific journal)

High-rate HMDSO-based coatings in open air using atmospheric-pressure plasma jet

H. Kakiuchi, K. Higashida, T. Shibata, H. Ohmi, T. Yamada, K. Yasutake

JOURNAL OF NON-CRYSTALLINE SOLIDS　Vol. 358　No. 17　p. 2462-2465　2012/01　Research paper (scientific journal)

Room-Temperature Formation of Low Refractive Index Silicon Oxide Films Using Atmospheric-Pressure Plasma

Kei Nakamura, Yoshihito Yamaguchi, Keiji Yokoyama, Kosuke Higashida, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY　Vol. 11　No. 4　p. 2851-2855　2011/04　Research paper (scientific journal)

Study on the Growth of Heteroepitaxial Cubic Silicon Carbide Layers in Atmospheric-Pressure H-2-Based Plasma

Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY　Vol. 11　No. 4　p. 2903-2909　2011/04　Research paper (scientific journal)

Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma

H. Kakiuchi, H. Ohmi, Y. Yamaguchi, K. Nakamura, K. Yasutake

THIN SOLID FILMS　Vol. 519　No. 1　p. 235-239　2010/09　Research paper (scientific journal)

Room-Temperature Silicon Nitrides Prepared with Very High Rates (> 50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma

Hiroaki Kakiuchi, Hiromasa Ohmi, Kei Nakamura, Yoshihito Yamaguchi, Kiyoshi Yasutake

PLASMA CHEMISTRY AND PLASMA PROCESSING　Vol. 30　No. 5　p. 579-590　2010/09　Research paper (scientific journal)

Investigation of structural properties of high-rate deposited SiN x films prepared at low temperatures (100-300 °C) by atmospheric-pressure plasma CVD

Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

Physica Status Solidi (C) Current Topics in Solid State Physics　Vol. 7　No. 3-4　p. 824-827　2010/03　Research paper (scientific journal)

Characterization of Microcrystalline Si Films Deposited at Low Temperatures with High Rates by Atmospheric-Pressure Plasma CVD

K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi, K. Yasutake

Book of Abstracts of the 23rd International Conference on Amorphous and Nanocrystalline Semiconductors　Vol. 7　No. 3-4　p. 545-548　2009/08　Research paper (international conference proceedings)

Microcrystalline Si films grown at low temperatures (90-220 C) with high rates in atmospheric-pressure VHF plasma

H. Kakiuchi, H. Ohmi, K. Ouchi, K. Tabuchi, K. Yasutake

J. Appl. Phys.　Vol. 106　No. 1　2009/07　Research paper (scientific journal)

Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode

H. Kakiuchi, H. Ohmi, R. Inudzuka, K. Ouchi, K. Yasutake

J. Appl. Phys.　Vol. 104　No. 5　2008/09　Research paper (scientific journal)

Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma

H. Kakiuchi, H. Ohmi, K. Yasutake

Thin Solid Films　Vol. 516　No. 19　p. 6580-6584　2008/06　Research paper (scientific journal)

Heteroepitaxial growth of cubic SiC on Si using very-high-frequency plasma at atmospheric pressure

Hiroaki Kakiuchi, Hiromasa Ohmi, Masatoshi Aketa, Ryota Nakamura, Kiyoshi Yasutake

SURFACE AND INTERFACE ANALYSIS　Vol. 40　No. 6-7　p. 974-978　2008/06　Research paper (scientific journal)

SiO2 formation by oxidation of crystalline and hydrogenated amorphous Si in atmospheric pressure plasma excited by very high frequency power

Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe, Kiyoshi Yasutake

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 47　No. 3　p. 1884-1888　2008/03　Research paper (scientific journal)

Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar/O2 plasma

H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake

Appl. Phys. Lett.　Vol. 90　No. 15　p. 151904-151904　2007/04　Research paper (scientific journal)

Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma

Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe, Kiyoshi Yasutake

Applied Physics Letters　Vol. 90　No. 9　p. 091909-091909　2007/02/26　Research paper (scientific journal)

Formation of silicon dioxide layers at low temperatures (150—400°C) by atmospheric pressure plasma oxidation of silicon

H. Kakiuchi, H. Ohmi, M. Harada, K. Yasutake

Science and Technology of Advanced Materials　Vol. 8　No. 3　p. 137-141　2007/01　Research paper (scientific journal)

Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane

H. Kakiuchi, H. Ohmi, R. Nakamura, M. Aketa, K. Yasutake

Jpn. J. Appl. Phys.　Vol. 45　No. 10B　p. 8381-8387　2006/10　Research paper (scientific journal)

Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition

H. Kakiuchi, H. Ohmi, M. Aketa, K. Yasutake, K. Yoshii, Y. Mori

Thin Solid Films　Vol. 496　No. 2　p. 259-265　2006/02　Research paper (scientific journal)

High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure

Hiroaki Kakiuchi, Hiromasa Ohmi, Yasuhito Kuwahara, Mitsuhiro Matsumoto, Yusuke Ebata, Kiyoshi Yasutake, Kumayasu Yoshii, Yuzo Mori

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials　Vol. 45　No. 4　p. 3587-3591　2005/09　Research paper (scientific journal)

Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition

H. Kakiuchi, M. Matsumoto, Y. Ebata, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori

Journal of Non-Crystalline Solids 351 (2005) 741-747　Vol. 351　No. 8-9　p. 741-747　2005/04　Research paper (scientific journal)

Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

H. Kakiuchi, Y. Nakahama, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori

Thin Solid Films 479 (2005) 17-23　Vol. 479　No. 1-2　p. 17-23　2005/04　Research paper (scientific journal)

High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi

Journal of Physics D: Applied Physics　Vol. 57　No. 27　p. 275204-275204　2024/04/12　Research paper (scientific journal)

Role of O₂ and N₂ addition on low-reflectance Si surface formation using moderate-pressure (3.3 kPa) hydrogen plasma

Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi

Physica Scripta　Vol. 98　No. 11　p. 115609-115609　2023/10/13　Research paper (scientific journal)

Shallow defect layer formation as Cu gettering layer of ultra-thin Si chips using moderate-pressure (3.3 kPa) hydrogen plasma

Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi

Journal of Applied Physics　Vol. 133　No. 16　2023/04/24　Research paper (scientific journal)

Improvement of deposition characteristics of silicon oxide layers using argon-based atmospheric-pressure very high-frequency plasma

Hiroaki Kakiuchi, Hiromasa Ohmi, Seiya Takeda, Kiyoshi Yasutake

Journal of Applied Physics　Vol. 132　No. 10　p. 103302-103302　2022/09/14　Research paper (scientific journal)

Si nanocone structure fabricated by a relatively high-pressure hydrogen plasma in the range of 3.3–27 kPa

Toshimitsu Nomura, Kenta Kimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

Journal of Vacuum Science & Technology B　Vol. 40　No. 3　p. 032801-032801　2022/05　Research paper (scientific journal)

Solution-based coating and printing of polycrystalline Ge films using GeO2 solution by moderate-pressure hydrogen plasma reduction

Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi

Flexible and Printed Electronics　Vol. 6　No. 3　2021/09/01　Research paper (scientific journal)

Formation of indium nitride nanostructures by atmospheric pressure plasma nitridation of molten indium

Kazushi Yoshida, Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi

Journal of Applied Physics　Vol. 130　No. 6　p. 063301-063301　2021/08/14　Research paper (scientific journal)

Gas-phase kinetics in atmospheric-pressure plasma-enhanced chemical vapor deposition of silicon films

Hiroaki Kakiuchi, Hiromasa Ohmi, Kiyoshi Yasutake

Journal of Applied Physics　Vol. 130　No. 5　p. 053307-053307　2021/08/07　Research paper (scientific journal)

Diffusion of excessively adsorbed hydrogen atoms on hydrogen terminated Si(100)(2×1) surface

Kouji Inagaki, Yoshitada Morikawa, Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi

AIP Advances　Vol. 11　No. 8　p. 085318-085318　2021/08/01　Research paper (scientific journal)

Plasma parameters in very high frequency argon plasmas mixed with nitrogen at atmospheric pressure

Kiyoshi Yasutake, Kazushi Yoshida, Hiromasa Ohmi, Hiroaki Kakiuchi

Journal of Applied Physics　Vol. 129　No. 17　p. 173302-173302　2021/05/07　Research paper (scientific journal)

Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4

Daiki Iino, Satoshi Tanida, Kazuaki Kurihara, Hiroyuki Fukumizu, Itsuko Sakai, Junko Abe, Jota Fukuhara, Rei Tanaka, Tomoyuki Tanaka, Jou Kikura, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi, Hisataka Hayashi

Japanese Journal of Applied Physics　Vol. 60　No. 5　p. 050904-050904　2021/05/01　Research paper (scientific journal)

Study on silicon removal property and surface smoothing phenomenon by moderate-pressure microwave hydrogen plasma

Hiromasa Ohmi, Kenta Kimoto, Toshimitsu Nomura, Hiroaki Kakiuchi, Kiyoshi Yasutake

Materials Science in Semiconductor Processing　Vol. 129　p. 105780-105780　2021/03　Research paper (scientific journal)

Characterization of silicon oxide thin films deposited at low temperatures using an atmospheric-pressure plasma-enhanced chemical vapor deposition technology

Masaya Maegawa, Sigeto Nawata, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

2020/11

Study on the growth of silicon films at low temperatures in atmospheric-pressure plasma excited by very high-frequency power

Shigeto Nawata, Masaya Maegawa, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

2020/11

High-rate Preparation of Hydrophobic Fluorocarbon Film from CF4 Feedstock Gas by Solid Source Aided Plasma Chemical Vapor Deposition Technique

Hiromichi Nakatsuka, Rei Tanaka, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

2020/11

Diamond synthesis from graphite by hydrogen plasma induced chemical transport

Naoto Komatsu, Atsuhisa Togo, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

2020/11

Plasma parameters in very high frequency helium and argon plasmas at atmospheric pressure

Kazushi Yoshida, Ken Nitta, Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi

J. Appl. Phys.　Vol. 128　No. 13　p. 133303-133303　2020/10　Research paper (scientific journal)

On-site tetrafluoroethylene gas generation from moderate-pressure pure tetrafluoromethane plasma reactor

Hiromasa Ohmi, Jou Kikura, Tomoyuki Tanaka, Rei Tanaka, Daiki Iino, Itsuko Sakai, Kazuaki Kurihara, Hiroyuki Fukumizu, Junko Abe, Jota Fukuhara, Hisataka Hayashi, Hiroaki Kakiuchi, Kiyoshi Yasutake

Chemical Engineering Science　Vol. 229　p. 116125-116125　2020/09　Research paper (scientific journal)

The effect of pretreatment for SiH4 gas by microwave plasma on Si film formation behavior by thermal CVD

Keiichi Hamanaka, Norihisa Takei, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

Plasma Process Polym.　Vol. 17　No. 4　p. e1900198-1900198　2020/01　Research paper (scientific journal)

Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

Ohmi Hiromasa, Sato Jumpei, Shirasu Yoshiki, Hirano Tatsuya, Kakiuchi Hiroaki, Yasutake Kiyoshi

ACS OMEGA　Vol. 4　No. 2　p. 4360-4366　2019/02

On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

Norihisa Takei, Fumiya Shinoda, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

J. Phys. D: Appl. Phys.　Vol. 51　No. 24　2018/05　Research paper (scientific journal)

Study of the interaction between molten indium and sub-atmospheric pressure hydrogen glow discharge for low-temperature nanostructured metallic particle film deposition

Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

JOURNAL OF ALLOYS AND COMPOUNDS　Vol. 728　p. 1217-1225　2017/09　Research paper (scientific journal)

Study of the interaction between molten indium and sub-atmospheric pressure hydrogen glow discharge for low-temperature nanostructured metallic particle film deposition

H. Ohmi, H. Kakiuchi, K. Yasutake

Journal of Alloys and Compounds,　Vol. 728　p. 1217-1225　2017/09　Research paper (scientific journal)

Determination of plasma impedance of microwave plasma system by electric field simulation

Mitsutoshi Shuto, Hiromasa Ohmi, Hiroaki Kakiuchi, Takahiro Yamada, Kiyoshi Yasutake

JOURNAL OF APPLIED PHYSICS　Vol. 122　No. 4　p. 043303-1-043303-8　2017/07　Research paper (scientific journal)

Copper dry etching by sub-atmospheric-pressure pure hydrogen glow plasma

Hiromasa Ohmi, Jumpei Sato, Tatsuya Hirano, Yusuke Kubota, Hiroaki Kakiuchi, Kiyoshi Yasutake

Applied Physics Letters　Vol. 109　No. 21　p. 211603-1-211603-5　2016/11　Research paper (scientific journal)

Magnesium hydride film formation using subatmospheric pressure H-2 plasma at low temperature

Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B　Vol. 34　No. 4　2016/07　Research paper (scientific journal)

Selective Boron Elimination from B2H6-SiH4 Gas Mixtures for Purifying Si

Hiromasa Ohmi, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY　Vol. 5　No. 9　p. P471-P477　2016/07　Research paper (scientific journal)

Magnesium hydride film formation using subatmospheric pressure H2 plasma at low temperature

Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics　Vol. 34　No. 4　2016/05　Research paper (scientific journal)

Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry

Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

JOURNAL OF APPLIED PHYSICS　Vol. 119　No. 6　2016/02　Research paper (scientific journal)

Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma

Hiromasa Ohmi, Takeshi Funaki, Hiroaki Kakiuchi, Kiyoshi Yasutake

JOURNAL OF PHYSICS D-APPLIED PHYSICS　Vol. 49　No. 3　2015/12　Research paper (scientific journal)

Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma

Hiromasa Ohmi, Takeshi Funaki, Hiroaki Kakiuchi, Kiyoshi Yasutake

Journal of Physics D: Applied Physics　2015/12　Research paper (scientific journal)

Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

JOURNAL OF APPLIED PHYSICS　Vol. 118　No. 4　2015/07　Research paper (scientific journal)

Nucleation for Si film selective growth using GeO2 solution and high-pressure plasma

Hiromasa Ohmi, Akihiro Goto, Yuji Onoshita, Hiroaki Kakiuchi, Kiyoshi Yasutake

ABSTRACT BOOKLET of 20th international colloquium of plasma processes　p. 99-99　2015/06

高圧マイクロ波水素プラズマを用いたSi高速エッチングにおける高効率SiH4製造プロセスの開発 ―Siエッチング効率の決定と最適条件の検討―

平野達也, 山田高寛, 大参宏昌, 垣内弘章, 安武潔

精密工学会 2015年度関西地方定期学術講演会 講演論文集　p. 8-9　2015/06　Research paper (other academic)

低温薄膜トランジスタへの応用に向けた大気圧プラズマCVDによるSi成膜プロセスの研究

田牧 祥吾, 坂口 尭之, 木元 雄一朗, 寺脇 功士, 大参 宏昌, 垣内 弘章, 安武 潔

精密工学会学術講演会講演論文集　Vol. 2015　p. 511-512　2015

高圧力マイクロ波水素プラズマ中のH密度評価（キーノートスピーチ）

安武 潔, 山田 高寛, 垣内 弘章, 大参 宏昌

精密工学会学術講演会講演論文集　Vol. 2015　p. 1071-1072　2015

シミュレーションによる挟ギャップマイクロ波プラズマの解析

足立 昂拓, 首藤 光利, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

精密工学会学術講演会講演論文集　Vol. 2015　p. 1073-1074　2015

大気圧VHFプラズマによるSiの低温・高速成膜技術の開発

坂口 尭之, 林 威成, 田牧 祥吾, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

精密工学会学術講演会講演論文集　Vol. 2015　p. 1075-1076　2015

Effect of H-2 Flow Rate on High-Rate Etching of Si by Narrow-Gap Microwave Hydrogen Plasma

Yamada Takahiro, Ohmi Hiromasa, Kakiuchi Hiroaki, Yasutake Kiyoshi

PLASMA CHEMISTRY AND PLASMA PROCESSING　Vol. 33　No. 4　p. 797-806　2013/06　Research paper (scientific journal)

Voltage distribution over capacitively coupled plasma electrode for atmospheric-pressure plasma generation

Mitsutoshi Shuto, Fukumi Tomino, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

NANOSCALE RESEARCH LETTERS　Vol. 8　2013/05　Research paper (scientific journal)

Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

Zeteng Zhuo, Yuta Sannomiya, Yuki Kanetani, Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

NANOSCALE RESEARCH LETTERS　Vol. 8　2013/05　Research paper (scientific journal)

Investigation of high-rate etching process of silicon by high-pressure microwave hydrogen plasma

Yamada Takahiro, Yamada Kosuke, Adachi Takahiro, Ohmi Hiromasa, Kakiuchi Hiroaki, Yasutake Kiyoshi

Proceedings of JSPE Semestrial Meeting　Vol. 2013　p. 551-552　2013

高圧マイクロ波水素プラズマによるシリコン高速エッチングにおけるプラズマ中でのシラン分解

山田 浩輔, 山田 高寛, 足立 昂拓, 大参 宏昌, 垣内 弘章, 安武 潔

精密工学会学術講演会講演論文集　Vol. 2013　p. 553-554　2013

大気開放プラズマ酸化による太陽電池用Si表面パッシベーョン技術の開発

藤原 裕平, 金谷 優樹, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

精密工学会学術講演会講演論文集　Vol. 2013　p. 583-584　2013

High rate deposition of ZnO thin films using atmospheric-pressure radio-frequency plasma:Influence of working parameters on the growth of ZnO films

Nagashima Masaru, Mizuno Yusuke, Yamada Takahiro, Ohmi Hiromasa, Kakiuchi Hiroaki, Yasutake Kiyoshi

Proceedings of JSPE Semestrial Meeting　Vol. 2013　p. 585-586　2013

Low temperature and High-Rate Deposition of Si Films Using Atmospheric-Pressure Very High-Frequency Plasma:Fabrication and Characterization of Bottom-Gate Thin Film Transistors

Lin Weicheng, Okamura Kohei, Sakaguchi Takayuki, Yamada Takahiro, Ohmi Hiromasa, Kakiuchi Hiroaki, Yasutake Kiyoshi

Proceedings of JSPE Semestrial Meeting　Vol. 2013　p. 565-566　2013

Deposition of Functional Membranes by Through-Substrate Plane-Plate Dielectric-Barrier Discharge

H. Kobayashi, H. Kakiuchi, K. Yasutake, T. Suzuki, M. Noborisaka, N. Negishi

11TH APCPST (ASIA PACIFIC CONFERENCE ON PLASMA SCIENCE AND TECHNOLOGY) AND 25TH SPSM (SYMPOSIUM ON PLASMA SCIENCE FOR MATERIALS)　Vol. 441　2013　Research paper (international conference proceedings)

Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation

Zeteng Zhuo, Yuta Sannomiya, Kazuma Goto, Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

CURRENT APPLIED PHYSICS　Vol. 12　p. S57-S62　2012/12　Research paper (scientific journal)

Atmospheric Pressure Plasma Processes for Preparation of Si-Based Thin Films

K. Yasutake, H. Ohmi, T. Yamada, H. Kakiuchi

Abst. 59th AVS Int. Symp.　2012/10　Research paper (international conference proceedings)

Siのマイクロ波水素プラズマエッチングにおける水素ガス流れと熱伝導のシミュレーション

岡本 康平, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

精密工学会学術講演会講演論文集　Vol. 2012　p. 333-334　2012

Chemical transport technique in high-pressure plasma for crystalline Si based solar cell

H. Ohmi, H. Kakiuchi, K. Yasutake

TACT2011 International Thin Films Conference　2011/11　Research paper (international conference proceedings)

Purified epitaxial Si film made from low-purity Si feedstock by high-pressure plasma gasification method (Oral)

H. Ohmi, T. Yamada, H. Kakiuchi, K. Yasutake

ITFPC-MIATEC 2011,Innovations in Thin Film Processing and Characterisation &Magnetron, Ion processing and Arc Technologies European Conference　2011/11　Research paper (international conference proceedings)

Study on the Growth of Hydrogenated Amorphous and Microcrystalline Silicon Films Deposited with High Rates Using Atmospheric-Pressure VHF Plasma

H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, K. Yasutake

Abst. 15th International Conference on Thin Films, 2011　2011/11　Research paper (international conference proceedings)

Atmospheric-Pressure Plasma Oxidation Process for Si Surface Passivation

Y. Sannnomiya, K. Goto, ZT. Zhuo, Y. Kanetani, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Abst. 15th International Conference on Thin Films, 2011　2011/11　Research paper (international conference proceedings)

Structural Characterization of Room-Temperature Silicon Oxides Deposited from Hexamethyldisiloxane-O・xygen Mixtures Using Atmospheric-Pressure VHF Plasma

K. Yokoyama, K. Okamura, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Abst. 15th International Conference on Thin Films, 2011　2011/11　Research paper (international conference proceedings)

Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma

T. Yamada, K. Okamoto, H. Ohmi, H. Kakiuchi, K. Yasutake

21st International Photovoltaic Science and Engineering Conference　Vol. 51　No. 10　2011/11　Research paper (international conference proceedings)

Atmospheric-Pressure Plasma Processes for Efficient Formation of Functional Thin Films at Low-Temperatures

K. Yasutake, H. Ohmi, T. Yamada, H. Kakiuchi

Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

Formation of SiOxNy Films for Passivation of Si Surfaces by Atmospheric-Pressure Plasma Oxidation

ZT. Zhuo, K. Goto, Y. Sannomiya, Y. Kanetani, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

Silicon Oxide Anti-Reflection Coatings from Hexamethyldisiloxane at Room Temperature Using Atmospheric-Pressure VHF plasma

K. Yokoyama, K. Okamura, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

Fundamental Study on the Film Growth from Organometallic precursors Using Atmospheric-Pressure Radio-Frequency Plasma

S. Mine, K. Okamura, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

Effects of Substrate Temperature on High-Rate Etching of Silicon by Microwave H2 Plasma

T. Yamada, K. Okamoto, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

Influence of the Electrode Configuration on the Growth of Microcrystalline Si Films in Atmospheric-Pressure Very High-Frequency Plasma

A. Hirano, T. Tsushima, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology　2011/10　Research paper (international conference proceedings)

New Formation Processes for Solar-Grade Si and TCO Films Using Atmospheric-Pressure Plasma Technology

K. Yasutake, H. Kakiuchi, T. Yamada, H. Ohmi

Proc. 2011 Korea & Japan Symposium on Solar Cells　2011/09　Research paper (international conference proceedings)

High-Rate Deposition of Amorphous and Microcrystalline Si Films Using Atmospheric-Pressure VHF Plasma

H. Kakiuchi, H.Ohmi, T. Yamada, K.Yasutake

Proc. 2011 Korea & Japan Symposium on Solar Cells　2011/09　Research paper (international conference proceedings)

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

K. Yasutake, H. Kakiuchi, H. Ohmi, K. Inagaki, Y. Oshikane, M. Nakano

JOURNAL OF PHYSICS-CONDENSED MATTER　Vol. 23　No. 39　2011/09　Research paper (scientific journal)

Growth and Properties of Zinc Oxide Films Prepared in Atmospheric-Pressure Radio Frequency Plasma

S. Mine, S. Okazaki, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Book of Abst. of The 24rd Int. Conf. on Amorphous and Nanocrystalline Semiconductors　2011/08　Research paper (international conference proceedings)

Deposition Characteristics of Silicon Oxides in Open Air Using Atmospheric-Pressure Plasma Jet

K. Higashida, K. Nakamura, T. Shibata, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Book of Abst. of The 24rd Int. Conf. on Amorphous and Nanocrystalline Semiconductors　2011/08　Research paper (international conference proceedings)

Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen Plasma Induced Chemical Transport

H. Ohmi, T. Yamada, H. Kakiuchi, K. Yasutake

Jpn. J. Appl. Phys　Vol. 50　No. 8　2011/08　Research paper (scientific journal)

Surface treatment for crystalline Si solar cell using a solid source high-pressure plasma etching method: texturing and affected layer removal

H. Ohmi, K. Umehara, H. Kakiuchi, K. Yasutake

CIP 11 Abstract booklet　2011/07　Research paper (international conference proceedings)

Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport

H. Ohmi, T. Hori, T. Mori, H. Kakiuchi, K. Yasutake

J. Phys. D: Appl. Phys.　Vol. 44　No. 23　2011/06　Research paper (scientific journal)

Surface Cleaning and Etching of 4H-SiC(0001) Using High-Density Atmospheric Pressure Hydrogen Plasma

Watanabe, Heiji, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Hosoi, Takuji, Shimura, Takayoshi, Yasutake, Kiyoshi

Journal of Nanoscience and Nanotechnology　Vol. 11　No. 4　p. 2802-2808　2011/04　Research paper (scientific journal)

Preparation of Si-based thin films using atmospheric pressure plasma chemical vapour deposition (CVD)

Kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi

Generation and Applications of Atmospheric Pressure Plasmas　p. 141-162　2011　Part of collection (book)

Formation of μc-SiC film by high-pressure plasma enhanced chemical transport toward its application to emitter layer of bulk silicon solar cell

Hori Takahiro, Kakiuchi Hiroaki, Yasutake Kiyoshi, Ohmi Hiromasa

Proceedings of JSPE Semestrial Meeting　Vol. 2011　p. 521-522　2011

Surface treatment characteristics of crystalline Si substrate by etchant source gas-free plasma etching method

Umehara Kouki, Kakiuchi Hiroaki, Yasutake Kiyoshi, Ohmi Hiromasa

Proceedings of JSPE Semestrial Meeting　Vol. 2011　p. 531-532　2011

大気圧プラズマ酸化による太陽電池用Si表面パッシベーション技術の開発

後藤 一磨, 卓 沢騰, 三宮 佑太, 金谷 優樹, 山田 高寛, 大参 宏昌, 垣内 弘章, 安武 潔

精密工学会学術講演会講演論文集　Vol. 2011　p. 529-530　2011

Open Air Deposition of Silicon Oxide Films at Room Temperature Using Atmospheric-Pressure Plasma Jet

K. Higashida, K. Nakamura, T. Shibata, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology　2010/11　Research paper (international conference proceedings)

Development of Atmospheric-Pressure Plasma Oxidation Process for Surface Passivation of Si

Z. T. Zhuo, T. Ohnishi, K. Goto, Y. Sannomiya, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology　2010/11　Research paper (international conference proceedings)

Influence of Process Parameters on the Material Properties of Microcrystalline Si Prepared Using Atmospheric-Pressure Very High-Frequency Plasma

K. Tabuchi, A. Hirano, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology　2010/11　Research paper (international conference proceedings)

Atmospheric-Pressure Plasma Technology for the High-Rate and Low-Temperature Deposition of Si Thin Films

H. Kakiuchi, H. Ohmi, K. Yasutake

Abst. 32nd Int. Symp. on Dry Process　2010/11　Research paper (international conference proceedings)

Atmospheric-Pressure Plasma Oxidation Process for Passivation of Si Surface

Z.T. Zhuo, T. Ohnishi, K. Goto, Y. Sannomiya, H. Ohmi, H. Kakiuchi, K. Yasutake

Conf. Proc. 7th ICRP and 63rd GEC　2010/10

Room-Temperature Deposition of Silicon Nitride Films with Very High Rates Using Atmospheric-Pressure Plasma Chemical Vapor Deposition

H. Kakiuchi, H. Ohmi, K. Yasutake

Proc. 7th International Conference on Reactive Plasmas, 28th Symposium on Plasma Processing and 63rd Gaseous Electronics Conference, Paris, France, 2010　2010/10

Formation of microcrystalline SiC films by chemical transport with a high-pressure glow plasma of pure hydrogen

Hiromaisa Ohmi, Yoshinori Hamaoka, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

THIN SOLID FILMS　Vol. 519　No. 1　p. 11-17　2010/10　Research paper (scientific journal)

Chemical Transport Deposition of Purified Poly-Si Films from Metallurgical-Grade Si Using Subatmospheric-Pressure H2 Plasma

K. Yasutake, H. Ohmi, H. Kakiuchi

Abst. 2010 MRS Spring Meeting, Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology–2010, San Francisco, April 6-9, 2010 (A10.1).　Vol. 1245　p. 215-226　2010/04　Research paper (international conference proceedings)

New Formation Process of Solar-Grade Si from Metallurgical-Grade Si by Chemical Transport in Near Atmospheric-Pressure Plasma

K. Yasutake, H. Ohmi, H. Kakiuchi

Abst. The 3 rd Int. Conf. on Plasma Nanotechnology & Science (IC-PLANTS 2010), Nagoya, March 11-12, 2010 (I-01).　2010/03

New Formation Process of Solar-Grade Si Material Based on Atmospheric-Pressure Plasma Science

K. Yasutake, H. Ohmi, K. Inagaki, H. Kakiuchi

Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology　2009/11　Research paper (international conference proceedings)

Low-Temperature Si Epitaxial Growth by Atmospheric-Pressure Plasma CVD

T. Ohnishi, K. Goto, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology　2009/11　Research paper (international conference proceedings)

Characterization of Room-Temperature Silicon Oxide Films Deposited with High Rates in Atmospheric-Pressure VHF Plasma

K. Nakamura, Y. Yamaguchi, K. Yokoyama, K. Higashida, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology　2009/11　Research paper (international conference proceedings)

Study on the Growth of Microcrystalline Si Films at Low Temperatures in Atmospheric-Pressure VHF Plasma

K. Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology　2009/11　Research paper (international conference proceedings)

In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

T. Ohnishi, Y. Kirihata, H. Ohmi, H. Kakiuchi, K. Yasutake

ECS Transactions　Vol. 25　No. 8　p. 309-315　2009/10　Research paper (scientific journal)

Characterization of High-Rate Deposited Microcrystalline Si Films Prepared Using Atmospheric-Pressure Very High-Frequency Plasma

K. Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi, K. Yasutake

ECS Transactions　Vol. 25　No. 8　p. 405-412　2009/10　Research paper (scientific journal)

Investigation of Deposition Characteristics and Properties of High-Rate Deposited SiNx Films Prepared at Low Temperatures (100-300 C) by Atmospheric-Pressure Plasma CVD

Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

Book of Abstracts of the 23rd International Conference on Amorphous and Nanocrystalline Semiconductors　2009/08

High-rate deposition of microcrystalline silicon films using atmospheric-pressure VHF plasma

H. Kakiuchi, H. Ohmi, K. Yasutake

Journal of The Surface Finishing Society of Japan　Vol. 60　No. 6　p. 371-375　2009/06

Reduction of titanium oxide in the presence of nickel by nonequilibrium hydrogen gas

H. Sekimoto, Y. Nose, T. Uda, S. Sato, H. Kakiuchi, Y. Awakura

J. Mater. Res.　Vol. 24　No. 7　p. 2391-2399　2009/04　Research paper (scientific journal)

大気圧プラズマCVD法による高品質Si系薄膜の低温形成

安武潔, 大参宏昌, 垣内弘章

第44回応用物理学会スクール「安価,簡単,便利～大気圧プラズマの基礎と応用～」資料集　2009/04

Characterization of Microcrystalline Si Films Deposited with High Rates by Atmospheric-Pressure Plasma Chemical Vapor Deposition

K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 1st Int. Symp. on Atomically Controlled Fabrication Technology, －Surface and Thin Film Processing－　2009/02　Research paper (international conference proceedings)

Room-Temperature Formation of Silicon Dioxide Films by Atmospheric-Pressure Plasma CVD Using Cylindrical Rotary Electrode

Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

Ext. Abst. 1st Int. Symp. on Atomically Controlled Fabrication Technology, －Surface and Thin Film Processing－　2009/02　Research paper (international conference proceedings)

大気圧プラズマプロセスによるSi系薄膜の低温形成

安武潔, 大参宏昌, 垣内弘章

第2回プラズマ新領域研究会講演資料集　2008/12

Simple dry etching method for Si related materials without etching source gased by atmospheric pressure plasma enhanced chemical transport

Hiromasa Ohmi, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

Abstracts of 11th international conference on plasma surface engineering　2008/09　Research paper (international conference proceedings)

Impacts of noble gas dilution on Si film structure prepared by atmosphericpressure plasma enhanced chemical transport

Hiromasa Ohmi, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

J.Phys. D:Applied Physics　Vol. 41　No. 19　2008/09　Research paper (scientific journal)

High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

K. Yasutake, H. Ohmi, Y. Kirihata, H. Kakiuchi

THIN SOLID FILMS　Vol. 517　No. 1　p. 242-244　2008/08　Research paper (scientific journal)

High-Quality Si and Related Thin Films Prepared by Atmospheric-Pressure Plasma CVD

K. Yasutake, H. Kakiuchi, H. Ohmi

2008/06

In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD

Y. Kirihata, T. Nomura, H. Ohmi, H. Kakiuchi, K. Yasutake

Surf. Interface Anal.　Vol. 40　No. 6-7　p. 984-987　2008/06　Research paper (scientific journal)

High-rate preparation of thin Si films by atmospheric-pressure plasma enhanced chemical transport

Daiki Kamada, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi

Surf. Interface Anal.　Vol. 40　No. 6-7　p. 979-983　2008/06　Research paper (scientific journal)

Formation of Polycrystalline-Si Thin Films Using Nanocrystalline Ge Nuclei

Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake

Abstracts of International Meeting for Future of Electron Devices, Kansai 2008　2008/05

Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei

C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe, K. Yasutake

IEICE Technical Report　2008/04

thin film formation of functinal materials by atmospheric pressure plasma chemical transport

Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

2008/02

Atmospheric-Pressure Plasma Processes for Fabrication of Si and SiO2 Thin Films at Low-Temperatures

K. Yasutake, H. Kakiuchi, H. Ohmi

Abstracts of The 18th Symposium of Materials Research Society of Japan　2007/12

Metal induced hydrogen effusion from amorphous silicon

Hiromasa Ohmi, Yoshinori Hamaoka, Hiroaki Kakiuchi, Kiyoshi Yasutake

APPLIED PHYSICS LETTERS　Vol. 91　No. 24　2007/12　Research paper (scientific journal)

High rate deposition of Si film at low temperature by atmospheric-pressure plasma enhanced chemical transport

Daiki kamada, Hiromasa Ohmi, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10　Research paper (international conference proceedings)

sterilization process of B.atrophaeus using atmospheric pressure mist plasma

Keiji Iwamoto, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10

selective growth of silicon by atmospheric pressure plasma enhanced chemical transport

Kazuya kishimoto, Hiromasa Ohmi, Tetusya Mori, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

ext. abstracts of international 21st century COE symposium on Atomistic fabrication technology 2007,Osaka, Japan　2007/10　Research paper (international conference proceedings)

Atomospheic-pressure plasma enhanced chemical transport as earth-conscious manufacturing technology

Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2007, Osaka, Japan　2007/10　Research paper (international conference proceedings)

Preparation of Si1-xGex and SiC compound films by atmospheric pressure plasma enhanced chemical transport

Hiromasa Ohmi, Yoshinori Hamaoka, Daiki Kamada, Hiroaki Kakiuchi, Kiyoshi Yasutake

2007/09

Si film preparation by atmospheric pressure plasma enhanced chemical transport in H2/He or H2/Ar mixture

Daiki Kamada, Hiromasa Ohmi, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

2007/08

Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma

Hiromasa Ohmi, Hiroaki Kakiuchi, Yoshinori Hamaoka, Kiyoshi Yasutake

J.Appl. Phys.　Vol. 102　No. 2　2007/07　Research paper (scientific journal)

structure control of Si films prepared by atmospheric-pressure plasma enhanced chemical transport

Kazuya Kishimoto, Daiki Kamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyosi Yasutake

ext.abstracts of the 20th symposium on plasma science for materials　2007/06

Characterization of epitaxial Si films grown at low-temperatures by atmospheric pressure plasma CVD

Y. Kirihata, N. Tawara, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake

Abstracts 5th Int. Conf. on Silicon Epitaxy and Heterostructures　2007/05　Research paper (international conference proceedings)

High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

K. Yasutake, H. Ohmi, Y. Kirihata, H. Kakiuchi

Abstracts Int. Conf. on Silicon Epitaxy and Heterostructures　2007/05　Research paper (international conference proceedings)

Photoluminescence Study of Defect-Free Epitaxial Silicon Filmes Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition

K. Yasutake, N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, Y. Fujiwara

Jpn. J. Appl. Phys.　Vol. 46　No. 4B　p. 2510-2515　2007/04　Research paper (scientific journal)

Characterization of Silicon Carbide Layers Formed by Atmospheric Pressure Plasma Carbonization of Silicon

H. Kakiuchi, H. Ohmi, R. Nakamura, M. Aketa, K. Yasutake

Proc. of International Symposium on Dry Process (DPS 2006), 29-30 November 2006,Nagoya, Japan　2006/11　Research paper (international conference proceedings)

大気圧プラズマによるSi表面の高速酸化

原田真, 垣内弘章, 大参宏昌, 渡部平司, 安武潔

薄膜材料デバイス研究会 第3回研究集会予稿集「薄膜デバイスの新展開」pp. 149.-150.　2006/11

High-Rate Deposition and Characterization of Microcrystalline Silicon Films Prepared by Atmospheric Pressure Plasma CVD

H. Kakiuchi, H. Ohmi, Y. Kuwahara, R. Inuzuka, K. Yasutake

Proc. of 21st European Photovoltaic Solar Energy Conference and Exhibition, 4-8 September 2006, Dresden, Germany　2006/11

Lifetime measurement of metastable fluorine atoms using electron cyclotron resonance plasma source

M. Shimizu, H. Ohmi, H. Kakiuchi, K. Yasutake

J. Vac. Sci. Technol. A　Vol. 24　No. 6　p. 2133-2138　2006/11　Research paper (scientific journal)

atmospheric pressure plasma sterilization with water micro-mist

Yoshiki Ogiyama, Hiromasa Ohmi, Keiji Iwamoto, Hiroaki Kakiuchi, Kiyoshi Yasutake

Proceedings of 6th international symposium on dry process　2006/11　Research paper (international conference proceedings)

High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma

M. Harada, H. Kakiuchi, H. Ohmi, H. Watanabe, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Fabrication of Polycrystalline Thin Films on Glass Substrates Using Ge Nano-Islands and Nuclei

K. Minami, C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vappor Deposition

N. Tawara, H. Ohmi, Y. Terai, T. Shimura, H. Kakiuchi, H. Watanabe, Y. Fujiwara, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Atomospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode

M. Harada, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake

Extenden Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology 2006　2006/10

Ro-vibronic Structure in the Q-branch in the Spectra of Hydrogen Fulcher-a Band Emission in the Atmospheric Pressure Plasma CVD Process Driven at 150 MHz

Y. Oshikane, H. Kakiuchi, K. Yamamura, C. M. Western, K. Yasutake, K. Endo

Extended Abstratcs of International 21st Century COE Symposium on Atomistic Fabrication Technology　2006/10

Fabrication of Si1-xGex and SiC films by atmospheric pressure plasma enhanced chemical transport

Kazuya Kishimoto, Daiki Kamada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology. pp.73-pp.74　2006/10　Research paper (international conference proceedings)

development of atmospheric pressure plasma enhanced chemical transport toward Eco-friendly manufacturing

Hiromasa Ohmi, Yoshinori Hamaoka, Yoshiki Ogiyama, Hiroaki Kakiuchi, Kiyoshi Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.9-10, Osaka, Japan.　2006/10　Research paper (international conference proceedings)

High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma

M. Harada, H. Kakiuchi, H. Ohmi, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.78-79, Osaka, Japan.　2006/10

Atmospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode

M. Harada, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.75-76, Osaka, Japan.　2006/10

Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition

N. Tawara, H. Ohmi, Y. Terai, T. Shimura, H. Kakiuchi, H. Watanabe, Y. Fujiwara, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan.　2006/10

Fabrication of Polycrystalline Thin Films on Glass Substrates Using Ge Nano-Islands and Nuclei

K. Minami, C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe, K. Yasutake

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.65-66, Osaka, Japan.　2006/10

Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates

K. Yasutake, H. Watanabe, H. Ohmi, H. Kakiuchi

ECS Transactions“Thin Film Transistor Technology 8"　Vol. 3　No. 8　p. 215-225　2006/10　Research paper (scientific journal)

Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode

H. Ohmi, H. Kakiuchi, N. Tawara, T. Wakamiya, T. Shimura, H. Watanabe, K. Yasutake

Jpn. J. Appl. Phys.　Vol. 45　No. 10　p. 8424-8429　2006/10　Research paper (scientific journal)

Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃)

N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, Y. Fujiwara, K. Yasutake

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095.　2006/09

N2 C3Pu-B3Pg band spectroscopy in open-air type CVM plasma with He/CF4/O2 and H2 Fulcher-a band spectroscopy in atmospheric He/H2/SiH4 CVD plasma

Yasushi Oshikane, Kazuya Yamamura, Koji Ueno, Hiroaki Kakiuchi, Kiyoshi Yasutake, Takafumi Karasawa, Colin M. Western, Akinori Oda, Akihiko Nagao, Katsuyoshi Endo

Europhysics Conference Abstract of 18th Europhysics Conference on the Atomic and Molecular Physics of Ionised Gases　2006/07

Surface Cleaning and Etching of 4H-SiC(0001) using Atmospheric Pressure Hydrogen Plasma

Heiji Watanabe, Shigenari Okada, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake

Materials Research Society (MRS) Spring Meeting, 2006, San Francisco, CA.　2006/04

Influence of H-2/SiH4 ratio on the deposition rate and morphology of polycrystalline silicon films deposited by atmospheric pressure plasma chemical vapor deposition

H Ohmi, H Kakiuchi, K Yasutake, Y Nakahama, Y Ebata, K Yoshii, Y Mori

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 45　No. 4B　p. 3581-3586　2006/04　Research paper (scientific journal)

Characterization of epitaxial Si films grown by atmospheric pressure plasma chemical vapor deposition using cylindrical rotary electrode

K Yasutake, H Ohmi, H Kakiuchi, T Wakamiya, H Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 45　No. 4　p. 3592-3597　2006/04　Research paper (scientific journal)

Surface photovoltage measurements of intrinsic hydrogenated amorphous Si films on Si wafers on the nanometer scale

Kenta Arima, Takushi Shigetoshi, Hiroaki Kakiuchi, Mizuho Morita

Physica B　Vol. 376-377　p. 893-896　2006/04　Research paper (scientific journal)

High-rate, low-temperature growth technology of functional thin films by atmospheric pressure plasma CVD

H. Kakiuchi, H. Ohmi, K. Yasutake

2006/03

Deposition Characteristics of Polycrystalline Silicon Carbide Films Prepared at High-Rates by Atmospheric Pressure Plasma CVD

Hiroaki Kakiuchi, Hiromasa Ohmi, Ryota Nakamura, Masatoshi Aketa, Kiyoshi Yasutake, Kumayasu Yoshii, Yuzo Mori

Proceedings of the 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing　2006/01

Low-temperature Growth of Epitaxial Silicon films by Atmospheric Pressure Plasma Chemical Vapor Deposition

Hiromasa Ohmi, Hiroaki Kakiuchi, Naotaka Tawara, Takuya Wakamiya, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake

Proceedings of the 6th ICRP and 23rd SPP　2006/01　Research paper (international conference proceedings)

Characterization of high pressure (200-760Torr), stable glow plasma of pure hydrogen by measuring etching properties of Si and optical emission spectroscopy

Hiromasa Ohmi, Hiroaki Kakiuchi, Yoshiki Ogiyama, Heiji Watanabe, Kiyoshi Yasutake

Proceedings of the 6th ICRP and 23rd SPP　2006/01　Research paper (international conference proceedings)

low temperature crystallization of amorphous silicon by atmospheric pressure plasma treatment in H2/He or H2/Ar mixtures

Hiromasa Ohmi, Hiroaki Kakiuchi, Kenichi Nishijima, Heiji Watanabe, Kiyoshi Yasutake

Proceedings of the 6th ICRP an 23rd SPP　Vol. 45　No. 10B　p. 8488-8493　2006/01　Research paper (international conference proceedings)

シリコン系薄膜の大気圧プラズマCVDおよびエピタキシャル成長

安武潔, 垣内弘章, 大参宏昌, 渡部平司

薄膜材料デバイス研究会第2回研究集会「低温プロセスの再発見」アブストラクト集（2005）　2005/11

Effect of Silane Concentration on Structure of the Poly-Si Films Prepared at High Rates by Atmospheric Pressure Plasma CVD

H.Ohmi, H. Kakiuchi, Y. Nakahama, Y. Ebata, K. Yasutake, K. Yoshii, Y.Mori

japanese jounal of precision engineering　Vol. 71　No. 11　p. 1393-1398　2005/11　Research paper (scientific journal)

Study of Effects of Metal layer on hydrogen desorption from hydrogenated amorphous silicon using temperature programmed desorption

Y. Hamaoka, H.Ohmi, H. Kakiuchi, K. Yasutake

Proceedings of the SOLID STATE DEVICES AND MATERIALS, KOBE　2005/09　Research paper (international conference proceedings)

Influence of H2/SiH4 ratio on the deposition rate and morphology of polycrystalline silicon films deposited by atmospheric pressure plasma CVD

H.Ohmi, H. Kakiuchi, K. Yasutake, Y. Nakahama, Y. Ebata, K. Yoshii, Y.Mori

Proceedings of the SOLID STATE DEVICES AND MATERIALS, KOBE　2005/09　Research paper (international conference proceedings)

High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmoshperis Pressure Plasma CVD

Takuya Wakamiya, Hiromasa Ohmi, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake, Kumayasu Yoshii, Yuso Mori

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials　2005/09

Surface photovoltage measurements of amorphous Si films on Si wafers by STM/STS

K. Arima, T. Shigetoshi, H. Kakiuchi, M. Morita

Program and Abstracts of the 23rd International Conference on Defects in Semiconductors, pp. 379-379　2005/07

Development of ultrahigh-rate deposition technology using atmospheric pressure plasma CVD

H. Kakiuchi, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori

2005/06

High-rate deposition of functional thin films by atmospheric pressure plasma CVD

H. Kakiuchi, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori, Y. Nakahama, Y. Ebata

2005/06

Deposition Characteristics of SiNx Films by Atmospheric Pressure Plasma CVD

Y.Mori, H.Kakiuchi, H.Ohmi, K.Yoshii, K.Yasutake, Y.Nakahama

Journal of the Japan Society for Precision Engineering, 70, 2, pp.292-296 (2004)　Vol. 70　No. 2　p. 292-296　2004/02　Research paper (scientific journal)

Characterization of Polycrystalline Silicon Films Fabricated by Atmospheric Pressure Plasma CVD with Rotary Electrode

Y.Mori, K.Yoshii, K.Yasutake, H.Kakiuchi, H.Ohmi, Y.Nakahama, Y.Ebata

Journal of the Japan Society for Precision Engineering, 70, 1, pp.144-148 (2004)　Vol. 70　No. 1　p. 144-148　2004/01　Research paper (scientific journal)

High-Rate Deposition of Amorphous Silicon Films by Atmospheric Pressure Plasma Chemical Vapor Deposition

Y. Mori, H. Kakiuchi, K. Yoshii, K. Yasutake

Crystal Growth Technology　2003/12　Research paper (scientific journal)

Visible Light Irradiation Effects on Atomic-Scale Observations of Hydrogenated Amorphous Silicon Films by Scanning Tunneling Microscopy

Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita, Yuzo Mori

Extended Abstracts of the 2003 Int. Conf. on SOLID STATE DEVICES AND MATERIALS　2003/09

Extremely High-Rate Deposition of Silicon Thin Films Prepared by Atmospheric Plasma CVD Method with a Rotary Electrode

M. Matsumoto, M. Shima, S. Okamoto, K. Murata, M. Tanaka, S. Kiyama, H. Kakiuchi, K. Yasutake, K. Yoshii, K. Endo, Y. Mori

Proc. of 3rd World Conf. and Exhibition on Photovoltaic Solar Energy Conversion, (Osaka Japan 2003)　p. 1552-1555　2003/05　Research paper (international conference proceedings)

Development of Atmospheric Pressure Plasma CVD Process

H.Kakiuchi

Vol. 54　No. 1　p. 46-49　2002/01

Dual mode amplification of dye laser by injection-seeding method

H. Ohmi, K. Yasutake, Y. Matsui, A. Takeuchi, H. Kakiuchi, K. Yoshii, Y. Mori

CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST　p. 124-125　2001/07　Research paper (international conference proceedings)

Formation of MonoChromatic Atomic Beam for Nanofabrication

Hiromasa Ohmi, Kiyoshi Yasutake, Yuki Matsui, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

2001/03

High-Rate Growth of Epitaxial Si by Atmospheric Pressure Plasma CVD

Yuzo Mori, Kumayasu Yoshii, kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi, amd, Katsuo Wada

2001/03　Research paper (international conference proceedings)

Epitaxial Growth of Si by Atmospheric Pressure Plasma CVD-Growth Rate and Crystallinity-

Yuzo Mori, Kumayasu Yoshii, kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi, amd, Katsuo Wada

2001/03　Research paper (international conference proceedings)

Numerical Simulation of Reactive Gas Flow in Atmospheric Pressure Plasma Chemical Vapor Deposition (AP-PCVD) Process

Motohiro NAKANO, Kiyoshi YASUTAKE, Hiroaki KAKIUCHI, Yoshiaki YAMAUCHI, Kumayasu YOSHII, Toshihiko KATAOKA, Yuzo MORI

2001/03　Research paper (international conference proceedings)

Epitaxial Growth of Si by Atmospheric Pressure Plasma CVD-Growth Rate and Crystallinity-

Yuzo Mori, Kumayasu Yoshii, kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi, amd, Katsuo Wada

2001/03　Research paper (international conference proceedings)

High-Rate Growth of Epitaxial Si by Atmospheric Pressure Plasma CVD

Yuzo Mori, Kumayasu Yoshii, kiyoshi Yasutake, Hiroaki Kakiuchi, Hiromasa Ohmi, amd, Katsuo Wada

2001/03　Research paper (international conference proceedings)

Formation of MonoChromatic Atomic Beam for Nanofabrication

Hiromasa Ohmi, Kiyoshi Yasutake, Yuki Matsui, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

2001/03

Development of New Machining Process for Ultra Precision Surface Preparation ---EEM,Plasma CVM,and Atmospheric Pressure Plasma CVD---

Yuzo Mori, Kazuto Yamauhci, Kazuya Yamamura, Hiroaki Kakiuchi, Yasuhisa Sano

2000/08

Development of Anisotropic Dry Etching Method Using Laser-Collimated Fluorine Radical Beam

Masao Shimizu, Hiromasa Ohmi, Kiyosi Yasutake, Kazuaki Yamane, Ryo Tanaka, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

1999/08　Research paper (international conference proceedings)

development of anisotropic dry etching method using laser-collimated fluorine radical beam

Masao Shimizu, Hiromasa Ohmi, Kiyoshi Yasutake, Kazuaki Yamane, Ryo Tanaka, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

1999/08　Research paper (international conference proceedings)

Creation of mono-velocity neutral atomic beam

Hiromasa Ohmi, Kiyoshi Yasutake, Masao Shimizu, Takakiyo Yasukawa, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Masataka Umeno, Yuzo Mori

1999/08　Research paper (international conference proceedings)

Creation of mono-velocity neutral atomic beam

Hiromasa Ohmi, Kiyoshi Yasutake, Masao Shimizu, Takakiyo Yasukawa, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Masataka Umeno, Yuzo Mori

1999/08　Research paper (international conference proceedings)

development of anisotropic dry etching method using laser-collimated fluorine radical beam

Masao Shimizu, Hiromasa Ohmi, Kiyoshi Yasutake, Kazuaki Yamane, Ryo Tanaka, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii, Yuzo Mori

1999/08　Research paper (international conference proceedings)

Doping of Single Crystalline AlN Thin Films Grown on Si(111) by Plasma-Assisted MBE

Akihiro Takeuchi, Mitsuru Ono, Kiyoshi Yasutake, Hiroaki Kakiuchi, Kumayasu Yoshii

1999/08　Research paper (international conference proceedings)

Molecular Beam Epitaxial Growth of AlN Single Crystalline Films on Si (111) Using Radio-Frequency Plasma Assisted Nitrogen Radical Source

Kiyoshi Yasutake, Akihiro Takeuchi, Hiroaki Kakiuchi, Kumayasu Yoshii

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS　Vol. 16　No. 4　p. 2140-2147　1998/07　Research paper (scientific journal)

MBE Growth of AlN Single Crystalline Films on Si (111) Using RF-excited Nitrogen Source

K.Yasutake, A.Takeuchi, H.Kakiuchi, T.Hagiwara, K.Yoshii

1996/10

Plasma CVM (chemical vaporization machining): an ultra precision machining technique using high-pressure reactive plasma

Y.Mori, K.Yamamura, K.Yamauchi, K.Yoshii, T.Kataoka, K.Endo, K.Inagaki, H.Kakiuchi

Nanotechnology　Vol. 4　No. 4　p. 225-229　1993/10　Research paper (scientific journal)

Interface Parameters and Surface Recombination Velocity at PECVD SiO┣D22┫D2/Si Interface

K.Yasutake, H.Kakiuchi, K.Yoshii, H.Kawabe, Z.Chen, S.K.Pang, A.Rohatgi

1993/06

Plasma CVM (chemical vaporization machining) -- A Chemical Machining Method With Equal Performances to Conventional Mechanical Methods from the Sense of Removal Rates and Spatial Resolutions

Y.Mori, K.Yamamura, K.Yamauchi, K.Yoshii, T.Kataoka, K.Endo, K.Inagaki, H.Kakiuchi

1993/05

Low Temperature Growth of Polycrystalline Silicon Films by Plasma Chemical Vapor Deposition under Higher Pressure than Atmospheric Pressure

H.Kawabe, Y.Mori, K.Yoshii, T.Kataoka, K.Yasutake, K.Endo, K.Yamauchi, K.Yamamura, H.Kakiuchi

1993/05