顔写真

PHOTO

Ichikawa Shuuhei
市川　修平
Ichikawa Shuuhei
市川　修平
Institutional repository
Graduate School of Engineering　Division of Electrical, Electronic and Information Engineering, Associate Professor
Institutional repository

Research History 5

  1. 2024/03 - Present
    Osaka University　Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering　Associate Professor

  2. 2022/03 - 2024/02
    Osaka University　Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering　Assistant Professor

  3. 2020/09 - 2022/02
    Osaka University　Research Center for Ultra-High Voltage Electron Microscopy　Assistant Professor

  4. 2018/04 - 2020/09
    Osaka University　Assistant Professor

  5. 2017/04 - 2018/03
    Osaka University　Research Center for Ultra-High Voltage Electron Microscopy　Specially Appointed Assistant Professor

Education 2

  1. Kyoto University　Graduate School of Engineering　Department of Electronic Science and Engineering

    2012/04 - 2017/03

  2. Kyoto University　Faculty of Engineering　School of Electrical & Electronic Engineering

    2008/04 - 2012/03

Committee Memberships 5

  1. 14th International Conference on Nitride Semiconductors Publication Committee

    2019 - 2024

  2. 電子材料シンポジウム実行委員会　総務委員　Academic society

    2021/03 - 2023/03

  3. 第38回電子材料シンポジウム（EMS-38） 会場委員

    2019 - 2019

  4. 日本結晶成長学会（JCCG-48）現地実行委員

    2019 - 2019

  5. 第37回電子材料シンポジウム（EMS-37） 会場委員

    2018 - 2018

Professional Memberships 1

  1. The Japan Society of Applied Physics

Research Areas 3

  1. Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

  2. Nanotechnology/Materials / Optical engineering and photonics /

  3. Nanotechnology/Materials / Crystal engineering /

Awards 11

  1. Young Researcher’s Paper Award

    Shuhei Ichikawa, Yasufumi Fujiwara, Kazunobu Kojima　the 10th Conference on Light-Emitting Devices and Their Industrial Application (LEDIA 2024)　2024/04

  2. 44th JSAP Outstanding Paper Award

    Shuhei Ichikawa, Keishi Shiomi, Dolf Timmerman, Yutaka Sasaki, Jun Tatebayashi, Yasufumi Fujiwara　The Japan Society of Applied Physics　2023/03

  3. CGCT Young Scientist Award

    Shuhei Ichikawa　CGCT-8　2021/03

  4. 研究奨励賞

    市川 修平　日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 第11回ナノ構造・エピタキシャル成長講演会　2019/06

  5. 平成30年度講演奨励賞

    市川 修平　日本材料学会 半導体エレクトロニクス部門委員会　2019/04

  6. Best Poster Presentation Award

    ICHIKAWA Shuhei　ISPlasma2019/IC-PLANTS2019　2019/03

  7. 小澤・吉川記念賞

    市川 修平　公益信託小澤・吉川記念エレクトロニクス研究助成基金　2019/03

  8. Young Scientist Presentation Award

    ICHIKAWA Shuhei　75th Japan Society of Applied Physics Fall Meeting　2014/09

  9. Young Scientist Presentation Award

    ICHIKAWA Shuhei　6th Growth of III-Nitrides Meeting　2014/07

  10. EMS Award

    ICHIKAWA Shuhei　33rd Electronic Materials Symposium　2014/07

  11. Excellent Paper Award

    ICHIKAWA Shuhei　5th Integrated Nanotechnology Foundation Research Report Meeting, Kyoto University　2013/03

Papers 78

  1. Determination of deformation potentials in InGaN at visible light region

    Keito Mori-Tamamura, Atsushi A. Yamaguchi, Shuhei Ichikawa, Kazunobu Kojima

    Journal of Applied Physics　2025/07/21　Research paper (scientific journal)

  2. Optical Cooling of Dot-in-Crystal Halide Perovskites: Challenges of Nonlinear Exciton Recombination

    Yasuhiro Yamada, Takeru Oki, Takeshi Morita, Takumi Yamada, Mitsuki Fukuda, Shuhei Ichikawa, Kazunobu Kojima, Yoshihiko Kanemitsu

    Nano Letters　Vol. 24　No. 36　p. 11255-11261　2024/08/29　Research paper (scientific journal)

    Publisher: American Chemical Society (ACS)

  3. Monolithic Integration of GaN-based Full color LEDs using Hybrid System of Intra-center and Inter-band Transitions

    Shuhei Ichikawa, Yasufumi Fujiwara

    Journal of the Japanese Association for Crystal Growth　Vol. 51　No. 2　p. 51-2-05/1-51-2-05/9　2024/07　Research paper (scientific journal)

  4. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

    K. Sano, H. Fujikura, T. Konno, S. Kaneki, S. Ichikawa, K. Kojima

    Applied Physics Letters　Vol. 124　No. 23　2024/06/03　Research paper (scientific journal)

    Publisher: AIP Publishing

  5. 230 nm wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs

    Kenjiro Uesugi, Ryota Akaike, Shuhei Ichikawa, Takao Nakamura, Kazunobu Kojima, Masahiko Tsuchiya, Hideto Miyake

    Applied Physics Express　2024/04/01　Research paper (scientific journal)

  6. An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN

    Takenori Iwaya, Shuhei Ichikawa, Volkmar Dierolf, Brandon Mitchell, Hayley Austin, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

    AIP Advances　2024/02/01　Research paper (scientific journal)

  7. Ultrafast dynamics of a photoinduced phase transition in single-crystal trititanium pentoxide

    Shuhei Hatanaka, Taro Tsuchiya, Shuhei Ichikawa, Jun Yamasaki, Kazuhisa Sato

    Applied Physics Letters　2023/12/11　Research paper (scientific journal)

  8. Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-co-doped GaAs

    Zhidong Fang, Jun Tatebayashi, Ryohei Homi, Masayuki Ogawa, Hirotake Kajii, Masahiko Kondow, Kyoko Kitamura, Brandon Mitchell, Shuhei Ichikawa, Yasufumi Fujiwara

    Optics Continuum　2023/10/15　Research paper (scientific journal)

  9. Formation and Optical Characteristics of GaN:Eu/GaN Nanowires for Applications in Light-Emitting Diodes

    Jun Tatebayashi, Takaya Otabara, Takuma Yoshimura, Raiki Hada, Ryo Yoshida, Shuhei Ichikawa, Yasufumi Fujiwara

    ECS Journal of Solid State Science and Technology　2023/09/06　Research paper (scientific journal)

    Publisher: The Electrochemical Society

  10. Electrically driven europium-doped GaN microdisk

    T. Taniguchi, D. Timmerman, S. Ichikawa, J. Tatebayashi, Y. Fujiwara

    Optics Letters　Vol. 48　No. 17　p. 4590-4590　2023/08/28　Research paper (scientific journal)

    Publisher: Optica Publishing Group

  11. Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al2O3/n-ZnO Heterostructures

    Jun Tatebayashi, Kazuto Nishimura, Shuhei Ichikawa, Shinya Yamada, Yoshikata Nakajima, Kazuhisa Sato, Kohei Hamaya, Yasufumi Fujiwara

    ECS Journal of Solid State Science and Technology　Vol. 12　No. 7　p. 076017-076017　2023/07/01　Research paper (scientific journal)

    Publisher: The Electrochemical Society

  12. 229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide

    Hiroto Honda, Soshi Umeda, Kanako Shojiki, Hideto Miyake, Shuhei Ichikawa, Jun Tatebayashi, Yasufumi Fujiwara, Kazunori Serita, Hironaru Murakami, Masayoshi Tonouchi, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

    Applied Physics Express　Vol. 16　No. 6　p. 062006-062006　2023/06/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  13. Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices

    Shinya Yamada, Masatoshi Kato, Shuhei Ichikawa, Michihiro Yamada, Takahiro Naito, Yasufumi Fujiwara, Kohei Hamaya

    Advanced Electronic Materials　2023/05/09　Research paper (scientific journal)

    Publisher: Wiley

  14. Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy

    T. Otabara, J. Tatebayashi, T. Yoshimura, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Japanese Journal of Applied Physics　Vol. 62　No. SG　p. SG1018-SG1018　2023/03/03　Research paper (scientific journal)

    Publisher: IOP Publishing

  15. Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing

    T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, Y. Fujiwara

    Applied Physics Letters　Vol. 122　No. 3　p. 032102-032102　2023/01/16　Research paper (scientific journal)

    Publisher: AIP Publishing

  16. Formation and Optical Characteristics of Tm,Yb-Codoped ZnO Nanowires Towards Improvement of Photovoltaic Conversion Efficiency Via Downconversion

    Jun TATEBAYASHI, Naoto NISHIYAMA, Dolf TIMMERMAN, Shuhei ICHIKAWA, Yasufumi FUJIWARA

    Journal of the Society of Materials Science, Japan　Vol. 71　No. 10　p. 811-818　2022/10/15　Research paper (scientific journal)

    Publisher: Society of Materials Science, Japan

  17. Optical Anisotropy and Photopumped Lasing near 250 nm from Semipolar (11¯02) Al x Ga 1−x N / AlN Quantum Wells with Cleaved Mirrors

    Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Physical Review Applied　Vol. 18　2022/10/03　Research paper (scientific journal)

  18. Second harmonic generation in GaN transverse quasi-phase-matched waveguide pumped with femtosecond laser

    Naoki Yokoyama, Yoshiki Morioka, Tomotaka Murata, Hiroto Honda, Kazunori Serita, Hironaru Murakami, Masayoshi Tonouchi, Shigeki TOKITA, Shuhei Ichikawa, Yasufumi FUJIWARA, TOSHIKI HIKOSAKA, Masahiro Uemukai, Tomoyuki TANIKAWA, Ryuji KATAYAMA

    Applied Physics Express　Vol. 15　No. 11　p. 112002-112002　2022/09/26　Research paper (scientific journal)

    Publisher: IOP Publishing

  19. Improved Q-factors of III-nitride-based photonic crystal nanocavities by optical loss engineering

    Takenori Iwaya, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

    Optics Express　Vol. 30　No. 16　p. 28853-28864　2022/08/01　Research paper (scientific journal)

  20. Formation and optical characteristics of GaN:Eu/GaN core–shell nanowires grown by organometallic vapor phase epitaxy

    T. Otabara, J. Tatebayashi, S. Hasegawa, D. Timmerman, S. Ichikawa, M. Ichimiya, M. Ashida, Y. Fujiwara

    Japanese Journal of Applied Physics　Vol. 61　No. SD　p. SD1022-SD1022　2022/06/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  21. DUV coherent light emission from ultracompact microcavity wavelength conversion device

    Tomoaki Nambu, Taketo Yano, Soshi Umeda, Naoki Yokoyama, Hiroto Honda, Yasunori Tanaka, Yutaka Maegaki, Yusuke Mori, Masashi Yoshimura, Shuhei Kobayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Ryota Ishii, Yoichi Kawakami, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

    Optics Express　Vol. 30　No. 11　p. 18628-18628　2022/05/23　Research paper (scientific journal)

    Publisher: Optica Publishing Group

  22. GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion

    Naoki Yokoyama, Ryo Tanabe, Yuma Yasuda, Hiroto Honda, Shuhei Ichikawa, Yasufumi Fujiwara, Toshiki Hikosaka, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

    Japanese Journal of Applied Physics　Vol. 61　No. 5　p. 050902-050902　2022/05/01　Research paper (scientific journal)

    Publisher: {IOP} Publishing

  23. Elucidation of the excitation mechanism of Tb ions doped in AlxGa1−xN grown by OMVPE toward a wavelength-stable green emitter

    R. Komai, S. Ichikawa, H. Hanzawa, J. Tatebayashi, Y. Fujiwara

    Journal of Applied Physics　Vol. 131　No. 7　p. 073102-073102　2022/02/21　Research paper (scientific journal)

    Publisher: AIP Publishing

  24. Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers

    Hayley J. Austin, Brandon Mitchell, Dolf Timmerman, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Volkmar Dierolf

    Journal of Applied Physics　Vol. 131　No. 4　p. 045701-045701　2022/01/31　Research paper (scientific journal)

    Publisher: {AIP} Publishing

  25. Eu-Doped GaN Red LEDs for Next-Generation Micro-LED Displays

    Shuhei Ichikawa

    NIHON GAZO GAKKAISHI (Journal of the Imaging Society of Japan)　Vol. 60　No. 6　p. 593-605　2021/12/10　Research paper (scientific journal)

  26. Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder

    Takenori Iwaya, Shuhei Ichikawa, Masato Murakami, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

    Applied Physics Express　Vol. 14　No. 12　p. 122002-122002　2021/12/01　Research paper (scientific journal)

    Publisher: {IOP} Publishing

  27. Droop-free amplified red emission from Eu ions in GaN

    Atsushi Takeo, Shuhei Ichikawa, Shogo Maeda, Dolf Timmerman, Jun Tatebayashi, Yasufumi FUJIWARA

    Japanese Journal of Applied Physics　Vol. 60　No. 12　2021/11/19　Research paper (scientific journal)

    Publisher: IOP Publishing

  28. Critical layer thickness of wurtzite heterostructures with arbitrary pairs of growth planes and slip systems

    Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Semiconductor Science and Technology　Vol. 36　No. 8　p. 085016-085016　2021/08/01　Research paper (scientific journal)

    Publisher: {IOP} Publishing

  29. Formation and optical characteristics of ZnO:Eu/ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition

    J. Tatebayashi, M. Mishina, N. Nishiyama, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Japanese Journal of Applied Physics　Vol. 60　No. SC　p. SCCE05-SCCE05　2021/06/01　Research paper (scientific journal)

    Publisher: {IOP} Publishing

  30. Enhanced Red Emission of Eu,O-Codoped GaN Embedded in a Photonic Crystal Nanocavity with Hexagonal Air Holes

    Shuhei Ichikawa, Yutaka Sasaki, Takenori Iwaya, Masato Murakami, Masaaki Ashida, Dolf Timmerman, Jun Tatebayashi, Yasufumi Fujiwara

    Physical Review Applied　Vol. 15　No. 3　p. 034086-034086　2021/03/30　Research paper (scientific journal)

    Publisher: American Physical Society (APS)

  31. Enhanced nonradiative recombination in Al x Ga1−x N-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction

    Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Applied Physics Express　Vol. 14　No. 3　p. 031007-031007　2021/03/01　Research paper (scientific journal)

    Publisher: {IOP} Publishing

  32. Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut

    Shuhei Ichikawa, Keishi Shiomi, Takaya Morikawa, Dolf Timmerman, Yutaka Sasaki, Jun Tatebayashi, Yasufumi Fujiwara

    Applied Physics Express　Vol. 14　No. 3　p. 031008-031008　2021/03/01　Research paper (scientific journal)

    Publisher: {IOP} Publishing

  33. Development of pulsed TEM equipped with nitride semiconductor photocathode for high-speed observation and material nanofabrication

    Hidehiro Yasuda, Tomohiro Nishitani, Shuhei Ichikawa, Shuhei Hatanaka, Yoshio Honda, Hiroshi Amano

    Quantum Beam Science　Vol. 5　No. 1　p. 5-5　2021/03　Research paper (scientific journal)

    Publisher: {MDPI} {AG}

  34. Promotion in solid phase reaction of Pt/SiO<inf>x</inf>bilayer film by electron-orbital-selective-excitation

    H. Yasuda, K. Sato, S. Ichikawa, M. Imamura, K. Takahashi, H. Mori

    RSC Advances　Vol. 11　No. 2　p. 894-898　2020/12/18　Research paper (scientific journal)

  35. Purcell-Effect-Enhanced Radiative Rate of Eu 3+ Ions in GaN Microdisks

    D. Timmerman, Y. Matsude, Y. Sasaki, S. Ichikawa, J. Tatebayashi, Y. Fujiwara

    Physical Review Applied　Vol. 14　No. 6　p. 064059-064059　2020/12/18　Research paper (scientific journal)

    Publisher: American Physical Society (APS)

  36. Enhanced photoluminescence in high-Q photonic crystal nanocavities with Er,O-Codoped GaAs

    Masayuki Ogawa, Jun Tatebayashi, Natsuki Fujioka, Ryoma Higashi, Shuhei Ichikawa, Masahiko Kondow, Dolf Timmerman, Yasufumi Fujiwara

    Zairyo/Journal of the Society of Materials Science, Japan　Vol. 69　No. 11　p. 823-828　2020/11/15　Research paper (scientific journal)

  37. Investigation on suitable structure for laser oscillation in eu-doped gan with two-dimensional photonic crystal nanocavities

    Takenori Iwaya, Shuhei Ichikawa, Masato Murakami, Jun Tatebayashi, Yasufumi Fujiwara

    Zairyo/Journal of the Society of Materials Science, Japan　Vol. 69　No. 10　p. 721-726　2020/10/15　Research paper (scientific journal)

  38. Perspective of semiconductor technologies contributed to the IoT society: II: Ultra-narrow-band light emitting diodes based on rare-earth-doped semiconductors towards display application

    Shuhei Ichikawa, Tomohiro Inaba, Keishi Shiomi, Jun Tatebayashi, Dolf Timmerman, Yasufumi Fujiwara

    Zairyo/Journal of the Society of Materials Science, Japan　Vol. 69　No. 10　p. 762-766　2020/10/15　Research paper (scientific journal)

  39. Enhanced Eu luminescence in GaN: Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities

    Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara

    Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials　p. 71-72　2020/09　Research paper (international conference proceedings)

  40. Size dependence of quantum efficiency of red emission from GaN:Eu structures for application in micro-LEDs

    D. Denier Van Der Gon, D. Timmerman, Y. Matsude, S. Ichikawa, M. Ashida, P. Schall, Y. Fujiwara

    Optics Letters　Vol. 45　No. 14　p. 3973-3976　2020/07/15　Research paper (scientific journal)

    Publisher: The Optical Society

  41. Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs

    R. Higashi, M. Ogawa, J. Tatebayashi, N. Fujioka, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Journal of Applied Physics　Vol. 127　No. 23　p. 233101-233101　2020/06/21　Research paper (scientific journal)

    Publisher: AIP Publishing

  42. Carrier dynamics and excitation of e u3+ ions in GaN

    Dolf Timmerman, Brandon Mitchell, Shuhei Ichikawa, Masaya Nagai, Masaaki Ashida, Yasufumi Fujiwara

    Physical Review B　Vol. 101　No. 24　2020/06/15　Research paper (scientific journal)

  43. Lattice relaxation in semipolar Al<inf>x</inf>Ga<inf>1-x</inf>N grown on (1102) AlN substrates

    Ryota Akaike, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Applied Physics Express　Vol. 13　No. 6　p. 061008-061008　2020/06/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  44. Quantitative evaluation of enhanced Er luminescence in GaAs-based two-dimensional photonic crystal nanocavities

    M. Ogawa, J. Tatebayashi, N. Fujioka, R. Higashi, M. Fujita, S. Noda, D. Timmerman, S. Ichikawa, Y. Fujiwara

    Applied Physics Letters　Vol. 116　No. 18　p. 181102-181102　2020/05/04　Research paper (scientific journal)

    Publisher: {AIP} Publishing

  45. GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors

    Tomohiro Inaba, Jun Tatebayashi, Keishi Shiomi, Dolf Timmerman, Shuhei Ichikawa, Yasufumi Fujiwara

    ACS Applied Electronic Materials　Vol. 2　No. 3　p. 732-738　2020/03/24　Research paper (scientific journal)

    Publisher: American Chemical Society ({ACS})

  46. Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength

    S. Ichikawa, N. Yoshioka, J. Tatebayashi, Y. Fujiwara

    Journal of Applied Physics　Vol. 127　No. 11　p. 113103-113103　2020/03/21　Research paper (scientific journal)

    Publisher: {AIP} Publishing

  47. Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in Ga N

    D. Timmerman, B. Mitchell, S. Ichikawa, J. Tatebayashi, M. Ashida, Y. Fujiwara

    Physical Review Applied　Vol. 13　No. 1　2020/01/24　Research paper (scientific journal)

  48. Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology

    B. Mitchell, D. Timmerman, W. Zhu, J. Y. Lin, H. X. Jiang, J. Poplawsky, R. Ishii, Y. Kawakami, V. Dierolf, J. Tatebayashi, S. Ichikawa, Y. Fujiwara

    Journal of Applied Physics　Vol. 127　No. 1　p. 013102-013102　2020/01/07　Research paper (scientific journal)

    Publisher: AIP Publishing

  49. High brightness and RGB integration of eu-doped GaN-based red LEDs for ultrahigh-resolution micro-LED display

    Yasufumi Fujiwara, Shuhei Ichikawa, Dolf Timmerman, Jun Tatebayashi

    Digest of Technical Papers - SID International Symposium　Vol. 51　No. 1　p. 691-694　2020　Research paper (international conference proceedings)

  50. Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN

    S. Copelman, H. Austin, D. Timmerman, J. D. Poplawsky, M. Waite, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, V. Dierolf, B. Mitchell

    Proceedings of SPIE - The International Society for Optical Engineering　Vol. 11302　2020　Research paper (international conference proceedings)

    Publisher: SPIE

  51. Self-Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters

    Hirotsugu Kobayashi, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Advanced Optical Materials　Vol. 7　No. 21　p. 1900860-1900860　2019/11/01　Research paper (scientific journal)

    Publisher: Wiley

  52. Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates

    Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Journal of Crystal Growth　Vol. 522　p. 68-77　2019/09/15　Research paper (scientific journal)

    Publisher: Elsevier BV

  53. 16.3: Invited Paper: New development in Red Light‐emitting Diodes (LEDs) using Eu‐doped GaN for Monolithic Micro‐LED Displays

    Yasufumi FUJIWARA, Shuhei ICHIKAWA, Jun TATEBAYASHI

    SID Symposium Digest of Technical Papers　Vol. 50　No. S1　p. 167-167　2019/09　Research paper (scientific journal)

    Publisher: Wiley

  54. Localized-surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes utilizing silver nanoparticles

    Jun Tatebayashi, Tomoya Yamada, Tomohiro Inaba, Dolf Timmerman, Shuhei Ichikawa, Yasufumi Fujiwara

    Applied Physics Express　Vol. 12　No. 9　2019/09/01　Research paper (scientific journal)

  55. Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of e u3+ ions

    Ruoqiao Wei, Brandon Mitchell, Dolf Timmerman, Tom Gregorkiewicz, Wanxin Zhu, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Volkmar Dierolf

    Physical Review B　Vol. 100　No. 8　2019/08/02　Research paper (scientific journal)

  56. Color-Tunablility in GaN LEDs Based on Atomic Emission Manipulation under Current Injection

    Mitchell, B., Wei, R., Takatsu, J., Timmerman, D., Gregorkiewicz, T., Zhu, W., Ichikawa, S., Tatebayashi, J., Fujiwara, Y., Dierolf, V.

    ACS Photonics　Vol. 6　No. 5　p. 1153-1161　2019/04　Research paper (scientific journal)

  57. Broad range thickness identification of hexagonal boron nitride by colors

    Anzai, Y., Yamamoto, M., Genchi, S., Watanabe, K., Taniguchi, T., Ichikawa, S., Fujiwara, Y., Tanaka, H.

    Applied Physics Express　Vol. 12　No. 5　p. 055007/1-055007/5　2019/03　Research paper (scientific journal)

  58. Picosecond Time-Resolved Excitation Dynamics and Emission Manipulation of Eu3+ Ions Doped into GaN

    Brandon Mitchell, Ruoqiao Wei, Dolf Timmerman, Tom Gregorkiewicz, Shuhei Ichikawa, Jun Tatebayashi, Volkmar Dierolf, Yasufumi Fujiwara

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)　2019　Research paper (international conference proceedings)

  59. Control of the energy transfer between Tm3+ and Yb3+ ions in ZnO nanowires for photovoltaic applications

    Jun Tatebayashi, Tokuhito Nakajima, Masao Mishina, Dolf Timmerman, Shuhei Ichikawa, Yasufumi Fujiwara

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)　2019　Research paper (international conference proceedings)

  60. High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminated GaN(0001) surface

    Shinya Yamada, Yuki Goto, Jun Tatebayashi, Shuhei Ichikawa, Yasufumi Fujiwara, Kohei Hamaya

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)　2019　Research paper (international conference proceedings)

  61. Enhanced luminescence efficiency of GaN:Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles

    Jun Tatebayashi, Tomoya Yamada, Tomohiro Inaba, Shuhei Ichikawa, Yasufumi Fujiwara

    Japanese Journal of Applied Physics　Vol. 58　No. SC　p. SCC09/1-SCC09/6　2019　Research paper (scientific journal)

  62. Al<inf>x</inf>Ga<inf>1−</inf><inf>x</inf>N-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination

    Hayakawa, M., Ichikawa, S., Funato, M., Kawakami, Y.

    Advanced Optical Materials　Vol. 7　No. 2　p. 1801106-1801106　2019/01　Research paper (scientific journal)

    Publisher: Wiley

  63. Dominant Nonradiative Recombination Paths and Their Activation Processes in AlxGa1-x N -related Materials

    Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Physical Review Applied　Vol. 10　No. 6　2018/12/11　Research paper (scientific journal)

  64. 超ワイドバンドギャップ半導体AlNにおける励起子再結合過程の同定

    Shuhei Ichikawa

    京都大学物性科学センター誌 : LTMセンター誌　No. 33　p. 10-17　2018/12　Research paper (scientific journal)

    Publisher: 京都大学物性科学センター誌 : LTMセンター誌

  65. Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation

    K. Sato, H. Yasuda, S. Ichikawa, M. Imamura, K. Takahashi, S. Hata, S. Matsumura, S. Anada, J. G. Lee, H. Mori

    Acta Materialia　Vol. 154　p. 284-294　2018/08/01　Research paper (scientific journal)

  66. Al x Ga1− x N-based semipolar deep ultraviolet light-emitting diodes

    Shuhei Ichikawa

    Applied Physics Express　Vol. 11　No. 6　p. 061001-061001　2018/06/01　Research paper (scientific journal)

    Publisher: IOP Publishing

  67. Wavelength-stable and Narrow-band Red LED for monolithic micro-LED display

    Yasufumi Fujiwara, Tomohiro Inaba, Keishi Shiomi, Shuhei Ichikawa, Jun Tatebayashi

    Proceedings of the International Display Workshops　Vol. 1　p. 418-420　2018　Research paper (international conference proceedings)

  68. GaN/AlN極薄膜量子井戸の作製と偏光特性 (レーザ・量子エレクトロニクス)

    船戸 充, 市川 修平, 川上 養一

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報　Vol. 118　No. 332　p. 1-4　2018/01　Research paper (scientific journal)

    Publisher: 電子情報通信学会

  69. Highly Efficient Deep-UV Emitters Based on Semipolar AlGaN Quantum Wells

    Shuhei Ichikawa

    Materia Japan　Vol. 57　No. 3　p. 109-113　2018　Research paper (scientific journal)

    Publisher: Japan Institute of Metals

  70. Optical properties of AlGaN quantum wires formed on AlN with macrostep surface

    Vol. 117　No. 333　p. 15-18　2017/11　Research paper (scientific journal)

    Publisher:

  71. Design of Al-rich AlGaN quantum well structures for efficient UV emitters

    Mitsuru Funato, Shuhei Ichikawa, Kyosuke Kumamoto, Yoichi Kawakami

    Proceedings of SPIE - The International Society for Optical Engineering　Vol. 10104　2017　Research paper (international conference proceedings)

  72. Highly efficient UV emission with semipolar quantum wells

    S. Ichikawa, M. Funato, Y. Kawakami

    SPIE Newsroom Lasers & Sources　Vol. 2 February 2016　2016/02　Research paper (scientific journal)

  73. Approaches to highly efficient UV emitters based on AlGaN quantum wells

    Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Proceedings of SPIE - The International Society for Optical Engineering　Vol. 9748　2016　Research paper (international conference proceedings)

  74. Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surface

    Minehiro Hayakawa, Yuki Hayashi, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Proceedings of SPIE - The International Society for Optical Engineering　Vol. 9926　2016　Research paper (international conference proceedings)

  75. Emission mechanisms in al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy

    Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Mitsuru Funato, Yoichi Kawakami

    Journal of Applied Physics　Vol. 117　No. 7　2015/02/21　Research paper (scientific journal)

  76. High quality semipolar (1102) AIGaN/AIN quantum wells with remarkably enhanced optical transition probabilities

    S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, Y. Kawakami

    Applied Physics Letters　Vol. 104　No. 25　2014/06/23　Research paper (scientific journal)

  77. Defect electronics in sic and fabrication of ultrahigh-voltage bipolar devices

    T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, Y. Nishi

    ECS Transactions　Vol. 50　No. 3　p. 25-35　2013　Research paper (international conference proceedings)

  78. Carrier recombination in n-type 4H-SiC epilayers with long carrier lifetimes

    Shuhei Ichikawa, Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto

    Applied Physics Express　Vol. 5　No. 10　2012/10　Research paper (scientific journal)

Misc. 4

  1. Spin transport in GaN using ferromagnetic Heusler alloy/n+-GaN Schottky tunnel contacts

    加藤昌稔, 山田晋也, 山田晋也, 市川修平, 小林周平, 山田道洋, 山田道洋, 内藤貴大, 舘林潤, 藤原康文, 藤原康文, 浜屋宏平, 浜屋宏平

    応用物理学会春季学術講演会講演予稿集(CD-ROM)　Vol. 69th　2022

  2. 内殻電子励起による界面固相反応の制御

    佐藤和久, 保田英洋, 市川修平, 今村真幸, 高橋和敏, 波多聰, 松村晶, 穴田智史, 李正九, 森博太郎

    日本金属学会講演概要(CD-ROM)　Vol. 164th　2019/03/06

  3. フォトン照射によるPt/SiOx界面固相反応

    佐藤和久, 佐藤和久, 保田英洋, 保田英洋, 市川修平, 市川修平, 今村真幸, 高橋和敏, 波多聰, 波多聰, 松村晶, 松村晶, 穴田智史, LEE J.-G., 森博太郎

    日本物理学会講演概要集(CD-ROM)　Vol. 74　No. 2　2019

  4. GaN(0001)上へのハーフメタルホイスラー合金Co2FeSi薄膜の低温MBE成長

    山田晋也, 山田晋也, 本多遼成, 後藤優貴, 市川修平, 舘林潤, 藤原康文, 藤原康文, 浜屋宏平, 浜屋宏平

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)　Vol. 80th　2019

Presentations 22

  1. Impact of killer defects in Al-rich AlGaN on DUV luminescent properties

    Shuhei Ichikawa

    Advances in III-Nitride Materials & Photonic Devices (IIIN-MPD), Technical University of Berlin, Germany (Online webinar series, Invited lecturer), March 26 (2025).　2025/03/26

  2. Ultrafast Surface Carrier Recombination in Semiconductors Evaluated by Two-photon Photoemission Spectroscopy

    S. Ichikawa, K. Kojima

    2024 Materials Research Society Fall Meeting (2024 MRS Fall Meeting), CH06.07.04, Boston, USA, December 1-6 (2024).　2024/12/04

  3. Design and Fabrication of Circularly Polarized Emitters using Metasurface-integrated InGaN Light Emitting Devices

    Shuhei Ichikawa, Yuki Murata, Yohei Taguchi, Shintaro Toda, Kazunobu Kojima

    Optics & Photonics Japan (OPJ2024), 30pMS2, Chofu, Japan, (Nov. 2024).　2024/11/30

  4. Surface Carrier Dynamics of Nitride Semiconductors Evaluated by Time-resolved Photoemission Spectroscopy

    S. Ichikawa, Y. Matsuda, M. Funato, Y. Kawakami, K. Kojima

    The 12th International Workshop on Nitride Semiconductors (IWN2024), 386, Hawai’i, USA, November 3-8 (2024).　2024/11

  5. Arbitrary control of optical polarization of (0001) InGaN radiation using anisotropic strain-relaxation in micro-LED structures

    S. Ichikawa, Y. Matsuda, M. Funato, Y. Kawakami, K. Kojima

    The 12th International Workshop on Nitride Semiconductors (IWN2024), 384, Hawai’i, USA, November 3-8 (2024).　2024/11/03

  6. Strong far-UVC localized emissions from Ga-rich regions induced by atomic-step meandering of AlGaN on high-temperature annealed AlN templates

    S. Ichikawa, K. Saito, R. Akaike, K. Uesugi, T. Nakamura, H. Miyake, K. Kojima

    The 12th International Workshop on Nitride Semiconductors (IWN2024), 391, Hawai’i, USA, November 3-8 (2024).　2024/11/03

  7. Time-resolved photoemission spectroscopy to elucidate carrier dynamics on nitride semiconductor surfaces

    2024/07/02

  8. Combinational integration of Eu-doped GaN and InGaN LEDs and their prospects for miniaturization

    Shuhei Ichikawa, Yasufumi Fujiwara, Kazunobu Kojima

    10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2024), LEDIA5-01, Yokohama, Japan, April 24-25 (2024).

  9. 成長表面の異なる深紫外AlGaN量子井戸の結晶成長と光物性

    市川 修平, 船戸 充, 川上 養一, 上杉 謙次郎, 赤池 良太, 中村 孝夫, 三宅 秀人, 小島 一信

    ワイドギャップ半導体学会（WideG）第15回研究会「UV系デバイス」, コモレ四谷タワーコンファレンス　2024/03/01

  10. Hybrid Integration of Eu-Doped GaN and InGaN LEDs towards Ultrahigh Definition Micro LED Display

    Shuhei Ichikawa, Yasufumi Fujiwara

    16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2024), 06aD02I, Nagoya, Japan, March 3-7 (2024).　2024/03

  11. Prospects for monolithic integration and miniaturization of GaN-based RGB LEDs towards micro-LED displays

    2024/01/26

  12. Localized deep-ultraviolet luminescence of AlGaN grown on high-temperature annealed AlN templates

    S. Ichikawa, K. Uesugi, K. Saito, S. Xiao, K. Shojiki, T. Nakamura, H. Miyake, K. Kojima

    The 14th International Conference on Nitride Semiconductors (ICNS-14), CH9-4, Fukuoka, Japan, November 12-17 (2023).

  13. Surface carrier lifetime of (0001) InGaN assessed by time-resolved photoemission spectroscopy

    S. Ichikawa, Y. Matsuda, H. Dojo, M. Funato, Y. Kawakami, K. Kojima

    The 14th International Conference on Nitride Semiconductors (ICNS-14), CH1-2, Fukuoka, Japan, November 12-17 (2023).　2023/11

  14. マイクロLED 応用に向けたGaN 系LED の同一基板フルカラー集積と時間分解光電子分光法に基づく表面再結合評価の提案

    市川 修平, 藤原 康文, 小島 一信

    日本学術振興会光電相互変換第125委員会267回研究会「マイクロLEDに関する要素技術」, 明治大学　2023/09/29

  15. Eu添加GaNの結晶成長とマイクロLEDディスプレイ用赤色LEDにむけた展開

    市川 修平, 舘林 潤, 藤原 康文

    日本学術振興会R032産業イノベーションのための結晶成長委員会 第13回研究会「ディスプレイ用LEDおよび関連発光材料」, ウインクあいち　2023/07/07

  16. Fabrication and room-temperature operation of full-color LEDs consisting of Eu-doped GaN and InGaN quantum wells on the same sapphire substrate

    2023/03

  17. Eu添加GaN赤色LEDの進展と２光子光電子分光法による表面再結合過程の直接評価の提案 ～マイクロLED素子応用に向けて～

    市川 修平、藤原 康文、小島 一信

    Sophia Open Research Week 2022 第3回半導体ナノフォトニクス研究会, O-1, 上智大学　2022/11/23

  18. Monolithically-Stacked Tri-Colored LEDs towards Micro-LED Display with Eu-doped GaN and InGaN Layers

    S. Ichikawa, K. Shiomi, T. Morikawa, Y. Sasaki, D. Timmerman, J. Tatebayashi, Y. Fujiwara

    International Workshop on Nitride Semiconductors (IWN 2022), AT052, Berlin, Germany, October 9-14 (2022).

  19. Visualization of excited-electron relaxation in InGaN quantum wells using time-resolved two-photon photoemission spectroscopy

    S. Ichikawa, Y. Fujiwara, K. Kojima

  20. Control of macrostep structures on vicinal (0001) GaN surfaces using Eu-doped GaN interlayers

    Shuhei Ichikawa

    3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity (IWSingularity 2022), S-15, Nagoya Congress Center/on-line, January 11-13 (2022).　2022/01/12

  21. 窒化物半導体成長におけるステップバンチング機構の制御と応用

    市川修平, 船戸充, 川上養一, 藤原康文

    日本結晶成長学会ナノエピ分科会 第12 回ナノ構造・エピタキシャル成長講演会, Th-I3, オンライン　2020/07

  22. 時間分解2光子光電子分光法を用いた表面再結合寿命の直接評価

    市川 修平, 毎田 修, 小島 一信

    第83回応用物理学会秋季学術講演会, 22p-B102-7, 東北大学 川内北キャンパス　2022/09

Industrial Property Rights 2

  1. 窒化物半導体デバイスとその基板、および希土類元素添加窒化物層の形成方法、並びに赤色発光デバイスとその製造方法

    市川 修平, 藤原 康文, 舘林 潤

    特許7158758

    出願日:2019/08/30

    登録日:2022/10/14

  2. 表示装置およびその製造方法

    藤原 康文, 上野山 雄, 舘林 潤, 市川 修平

    特許7454854

Media Coverage 1

  1. LEDで狙う次世代ディスプレー 高輝度・低電力 液晶・有機EL超え

    2020/04/16

Institutional Repository 2

Content Published in the University of Osaka Institutional Repository (OUKA)

  1. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

    Sano K., Fujikura H., Konno T., Kaneki S., Ichikawa S., Kojima K.

    Applied Physics Letters　Vol. 124　2024/06/03

  2. Half-Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices

    Yamada Shinya, Kato Masatoshi, Ichikawa Shuhei, Yamada Michihiro, Naito Takahiro, Fujiwara Yasufumi, Hamaya Kohei

    Advanced Electronic Materials　Vol. 9　No. 7　2023/07/01