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Sakai Akira

酒井 朗

Graduate School of Engineering Science Department of Systems Innovation, Professor

Research Areas

  • Nanotechnology/Materials, Inorganic materials
  • Nanotechnology/Materials, Thin-film surfaces and interfaces
  • Nanotechnology/Materials, Crystal engineering
  • Nanotechnology/Materials, Applied materials

Papers

  • Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices, Zenya Nagata,Takuma Shimizu,Tsuyoshi Isaka,Tetsuya Tohei,Nobuyuki Ikarashi,Akira Sakai, Scientific Reports, Springer Science and Business Media LLC, Vol. 9, No. 1, p. 10013-1-10013-7, 2019/12
  • Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction, Kazuki Shida,Nozomi Yamamoto,Tetsuya Tohei,Masayuki Imanishi,Yusuke Mori,Kazushi Sumitani,Yasuhiko Imai,Shigeru Kimura,Akira Sakai, Japanese Journal of Applied Physics, IOP Publishing, Vol. 58, No. SC, p. SCCB16-1-SCCB16-6, 2019/06/01
  • Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method, Takeaki Hamachi,Tetsuya Tohei,Masayuki Imanishi,Yusuke Mori,Akira Sakai, Japanese Journal of Applied Physics, IOP Publishing, Vol. 58, No. SC, p. SCCB23-SCCB23, 2019/06/01
  • Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method, Takeaki Hamachi,Tetsuya Tohei,Masayuki Imanishi,Yusuke Mori,Akira Sakai, Japanese Journal of Applied Physics, IOP Publishing, Vol. 58, No. 5, p. 050918-050918, 2019/05/01
  • Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals, Vol. 9, p. 2601-1-2601-9, 2019/02
  • Depth-resolved analysis of lattice distortions in high-Ge-content SiGe/compositionally graded SiGe films using nanobeam x-ray diffraction, Kazuki Shida,Shotaro Takeuchi,Tetsuya Tohei,Yasuhiko Imai,Shigeru Kimura,Andreas Schulze,Matty Caymax,Akira Sakai, Semiconductor Science and Technology, IOP Publishing, Vol. 33, No. 12, p. 124005-124005, 2018/12/01
  • Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction, K. Shida,T. Tohei,M. Imanishi,Y. Mori,K. Sumitani,Y. Imai,S. Kimura,A. Sakai, International Workshop on Nitride Semiconductors (IWN 2018), 2018/11
  • Dislocation Properties in Bulk GaN Substrates, IDGN-4, 2018/11
  • Local electrical and structural analysis for threading dislocations in the modified Na-flux GaN bulk single crystals, T. Hamachi,T. Tohei,M. Imanishi,Y. Mori,A. Sakai, International Workshop on Nitride Semiconductors (IWN 2018), 2018/11
  • Defect characterization in nitride semiconductor bulk materials, Akira Sakai, International Workshop on Nitride Semiconductors (IWN 2018), 2018/11
  • Gate-Tuning of Synaptic Functions Based on The Oxygen Vacancy Distribution Control in Four-Terminal TiO2-x Memristive Devices, Zenya Nagata,Takuma Shimizu,Tsuyoshi Isaka,Tetsuya Tohei,Akira Sakai, 2018 International Conference on Solid State Devices and Materials (SSDM2018), 2018/09
  • Nanobeam X-ray diffraction analysis of local lattice distortions in the growth direction of a modified Na-flux GaN bulk crystal, K. Shida,S. Takeuchi,T. Tohei,M. Imanishi,Y. Mori,K. Sumitani,Y. Imai,S. Kimura,A. Sakai, International Symposium on Growth of III-Nitrides (ISGN-7), 2018/08
  • Leakage current analysis for individual dislocations in the modified Na-flux GaN bulk single crystal, T. Hamachi,S. Takeuchi,T. Tohei,M. Imanishi,Y. Mori,A. Sakai, International Symposium on Growth of III-Nitrides (ISGN-7), 2018/08
  • Three-dimensional structural and defect analysis by nanobeam X-ray diffraction for semiconductor materials, Akira Sakai, THERMEC'2018, 2018/07
  • Facile Synthesis Route of Au-Ag Nanostructures Soaked in PEG, E. K. Fodjo,A. Canlier,C. Kong,A. Yurtsever,P. L. A. Guillaume,F. T. Patrice,M. Abe,T. Tohei,A. Sakai, Advances in Nanoparticles, 2018/07
  • Analysis of Ti valence states in resistive switching regions of a rutile TiO2%x four-terminal memristive device, Kengo Yamaguchi,Shotaro Takeuchi,Tetsuya Tohei,Nobuyuki Ikarashi,Akira Sakai, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Vol. 57, No. 6, p. 06KB02-1-06KB02-4, 2018/06/01
  • Tomographic mapping analysis of lattice distortions in the depth direction of high-Ge-content SiGe films with compositionally graded buffer layers using nanobeam X-ray diffraction, K. Shida,S. Takeuchi,T. Tohei,Y. Imai,S. Kimura,A. Schulze,M. Caymax,A. Sakai, 1st Joint ISTDM/ICSI 2018 Conference, 2018/05
  • Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy, T. Hamachi,S. Takeuchi,T. Tohei,M. Imanishi,M. Imade,Y. Mori,A. Sakai, Journal of Applied Physics, AIP Publishing, Vol. 123, No. 16, p. 161417-161417, 2018/04/28
  • Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction, K. Shida,S. Takeuchi,T. Tohei,H. Miyake,K. Hiramatsu,K. Sumitani,Y. Imai,S. Kimura,A. Sakai, Journal of Applied Physics, AIP Publishing, Vol. 123, No. 16, p. 161563-161563, 2018/04/28
  • Three-dimensional analysis of defect-related singularity structures in semiconductor materials, A. Sakai,S. Takeuchi,K. Shida,S. Kamada,T. Tohei,Y. Imai,S. Kimura,H. Miyake,K. Hiramatsu, OIST-Singularity Project Joint Workshop, 2018/04
  • Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates, Hideki Matsui,Takafumi Ishibe,Tsukasa Terada,Shunya Sakane,Kentaro Watanabe,Shotaro Takeuchi,Akira Sakai,Shigeru Kimura,Yoshiaki Nakamura, Applied Physics Letters, American Institute of Physics Inc., Vol. 112, No. 3, p. 031601-1-031601-4, 2018/01/15
  • Nanobeam X-ray diffraction analysis of lattice deformation in thin nano-indented single crystal Si wafers, 2018/01
  • Leakage current analysis in GaN-on-GaN p-n diode by conductive atomic force microscopy, 2018/01
  • Resistive switching characteristics of four-terminal TiO2-x single crystal memristive devices, Takuma Shimizu,Shotaro Takeuchi,Tetsuya Tohei,Akira Sakai, 2017 International Workshop on Dielectric Thin Films for Future Electron Devices Science and Technology (2017 IWDTF), 2017/11
  • Analysis of Ti valence state in resistive switching region of rutile TiO2-x four-terminal memristive device, 2017/11
  • Quantification of local strain distributions in nanoscale strained SiGe FinFET structures, Shogo Mochizuki,Conal E. Murray,Anita Madan,Teresa Pinto,Yun-Yu Wang,Juntao Li,Weihao Weng,Hemanth Jagannathan,Yasuhiko Imai,Shigeru Kimura,Shotaro Takeuchi,Akira Sakai, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 122, No. 13, p. 135705-1-135705-10, 2017/10
  • Valence state analysis of Ti in resistive switching region of rutile TiO2-x single crystals memristor, 2017/09
  • Control of dislocation morphology and lattice distortion in Na-flux GaN crystals, S. Takeuchi,Y. Mizuta,M. Imanishi,M. Imade,Y. Mori,K. Sumitani,Y. Imai,S. Kimura,A. Sakai, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 122, No. 10, p. 105303-1-105303-6, 2017/09
  • Epitaxial multilayers of beta-FeSi2 nanodots/Si for Si-based nanostructured electronic materials, Shunya Sakane,Masayuki Isogawa,Kentaro Watanabe,Jun Kikkawa,Shotaro Takeuchi,Akira Sakai,Yoshiaki Nakamura, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, A V S AMER INST PHYSICS, Vol. 35, No. 4, 2017/07
  • Characterization of local piezoelectric property in Na flux GaN bulk single crystals, A. Ueda,S. Takeuchi,M. Imanishi,M. Imade,Y. Mori,A. Sakai, 29th International Conference on Defects in Semiconductors, 2017/07
  • Leakage current analysis for dislocations in Na flux GaN bulk single crystals by conductive atomic force microscopy, T. Hamachi,S. Takeuchi,M. Imanishi,M. Imade,Y. Mori,A. Sakai, 29th International Conference on Defects in Semiconductors, 2017/07
  • In-depth microstructural analysis of heteroepitaxial AlN thick films grown on trench-patterned templates by nanobeam X-ray diffraction, K. Shida,S. Takeuchi,H. Miyake,K. Hiramatsu,K. Sumitani,Y. Imai,S. Kimura,A. Sakai, 29th International Conference on Defects in Semiconductors, 2017/07
  • Control of dislocation propagation behaviors in Na flux GaN bulk crystals, S. Takeuchi,Y. Mizuta,M. Imanishi,M. Imade,Y. Mori,Y. Imai,S. Kimura,A. Sakai, The 12th International Conference on Nitride Semiconductors (ICNS-12), 2017/07
  • Nano beam X-ray diffraction analysis of Na flux GaN bulk crystals grown with controlling seed crystal surfaces and growth mode, S. Takeuchi,Y. Mizuta,M. Imanishi,M. Imade,Y. Mori,Y. Imai,S. Kimura,A. Sakai, The 12th International Conference on Nitride Semiconductors (ICNS-12), 2017/07
  • Tomographic Mapping Analysis in the Depth Direction of High-Ge-Content SiGe Layers with Compositionally Graded Buffers Using Nanobeam X-ray Diffraction, Kazuki Shida,Shotaro Takeuchi,Yasuhiko Imai,Shigeru Kimura,Andreas Schulze,Matty Caymax,Akira Sakai, ACS APPLIED MATERIALS & INTERFACES, AMER CHEMICAL SOC, Vol. 9, No. 15, p. 13726-13732, 2017/04
  • Study on the influence of different trench-patterned templates on the crystalline microstructure of AIN epitaxial films by X-ray microdiffraction, Dinh Thanh Khan,Shotaro Takeuchi,Yoshiaki Nakamura,Kunihiko Nakamura,Takuji Arauchi,Hideto Miyake,Kazumasa Hiramatsu,Yasuhiko Imai,Shigeru Kimura,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 56, No. 2, p. 025502-1-025502-5, 2017/02
  • Structural characterization of defects in nitride semiconductor materials, 2017/01
  • Reversible resistive switching by the voltage-driven control of oxygen vacancy distribution in four terminal planar TiO2-x-based devices, 2016/12
  • Nanobeam X-ray diffraction for tomographic mapping analysis of high Ge content Si1-yGey/compositionally graded Si1-xGex stacked structure, 2016/12
  • Demonstration of reversible resistive switching by the control of oxygen vacancy distribution in rutile TiO2-x single crystals, 2016/11
  • Nano beam X-ray diffraction analysis of microstructures in Na-flux GaN bulk crystals grown with controlling seed crystal surfaces and growth mode, 2016/11
  • Tomographic mapping analysis of high Ge composition SiGe layers with compositionally graded buffers by nanobeam X-ray diffraction, 2016/11
  • Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique, Shohei Kamada,Shotaro Takeuchi,Dinh Thanh Khan,Hideto Miyake,Kazumasa Hiramatsu,Yasuhiko Imai,Shigeru Kimura,Akira Sakai, APPLIED PHYSICS EXPRESS, IOP PUBLISHING LTD, Vol. 9, No. 11, p. 111001-1-111001-4, 2016/11
  • Three-dimensional reciprocal space mapping analysis for localized structures and defects in nitride semiconductor materials, 2016/10
  • Tomographic mapping analysis of high Ge content SiGe epitaxial films with compositionally graded layers by X-ray microdiffraction, 2016/08
  • Interface and dislocation structures in Na flux GaN grown on MOCVD-GaN, 2016/08
  • Crystalline structure of TiC ultrathin layers formed on highly oriented pyrolytic graphite by chemical reaction from Ti/graphite system, Nakatsuka Osamu,Hisada Kenji,Oida Satoshi,Sakai Akira,Zaima Shigeaki, Japanese Journal of Applied Physics, IOP publishing, Vol. 55, No. 6, p. 06JE02-06JE02, 2016/06
  • Characterization of local strain in nanoscale strained SiGe FinFET structures, 2016/06
  • Nanostructure driven defect control in GaN grown by the Na flux method, 2016/06
  • Epitaxial iron oxide nanocrystals with memory function grown on Si substrates, Takafumi Ishibe,Hideki Matsui,Kentaro Watanabe,Shotaro Takeuchi,Akira Sakai,Yoshiaki Nakamura, APPLIED PHYSICS EXPRESS, IOP PUBLISHING LTD, Vol. 9, No. 5, p. 055508-1-055508-4, 2016/05
  • Positional dependence of defect distribution in semipolar (20(2)over-bar1) hydride vapor phase epitaxy-GaN films grown on (22(4)over-bar3) patterned sapphire substrates, Toshiro Uchiyama,Shotaro Takeuchi,Shohei Kamada,Takuji Arauchi,Yasuhiro Hashimoto,Keisuke Yamane,Narihito Okada,Yasuhiko Imai,Shigeru Kimura,Kazuyuki Tadatomo,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 55, No. 5, 2016/05
  • Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials, Shuto Yamasaka,Kentaro Watanabe,Shunya Sakane,Shotaro Takeuchi,Akira Sakai,Kentarou Sawano,Yoshiaki Nakamura, SCIENTIFIC REPORTS, NATURE PUBLISHING GROUP, Vol. 6, 2016/03
  • Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Technique, Tomohiro Ueda,Shunya Sakane,Takafumi Ishibe,Kentaro Watanabe,Shotaro Takeuchi,Akira Sakai,Yoshiaki Nakamura, JOURNAL OF ELECTRONIC MATERIALS, SPRINGER, Vol. 45, No. 3, p. 1914-1920, 2016/03
  • In-situ doped epitaxial growth of highly dopant-activated n+-Ge layers for reduction of parasitic resistance of Ge-nMISFETs, Y. Moriyama,Y. Kamimuta,K. Ikeda,A. Sakai,T. Tezuka, ECS Transactions, Electrochemical Society Inc., Vol. 75, No. 8, p. 373-385, 2016
  • Epitaxial growth of iron oxide nanodots on Si substrate using Fe-coated Ge nuclei, 2015/12
  • Observation of covering epitaxial β-FeSi2 nanodots with Si for fabricating Si/β-FeSi2 nanodots stacked structures, 2015/12
  • Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN, S. Takeuchi,H. Asazu,M. Imanishi,Y. Nakamura,M. Imade,Y. Mori,A. Sakai, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 118, No. 24, p. 245306-1-245306-7, 2015/12
  • Formation and optical properties of Ge films grown on Si(111) substrates using nanocontact epitaxy, Kazuki Tanaka,Yoshiaki Nakamura,Shuto Yamasaka,Jun Kikkawa,Takenobu Sakai,Akira Sakai, Appl. Surf. Sci., Vol. 325, p. 170-174, 2015/11
  • Positional dependence of defect distribution in semipolar (20-21) HVPE-GaN films grown on (22-43) patterned sapphire substrates, 2015/11
  • Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials, Shuto Yamasaka,Yoshiaki Nakamura,Tomohiro Ueda,Shotaro Takeuchi,Akira Sakai, Scientific Reports, Nature Publishing Group, Vol. 5, No. 14490, p. 1-9, 2015/10/05
  • Phonon scattering control by structure of epitaxial Ge nanodots in Si, 2015/07
  • Thermal conductivity reduction and carrier doping in the Si nanoarchitecture including epitaxial nanodots, 2015/07
  • X-ray microdiffraction as a promising method to characterize nanometer-scale structures and textures in semiconductor materials, 2015/06
  • Fabrication of Si Thermoelectric Nanomaterials Containing Ultrasmall Epitaxial Ge Nanodots with an Ultrahigh Density, Shuto Yamasaka,Yoshiaki Nakamura,Tomohiro Ueda,Shotaro Takeuchi,Yuta Yamamoto,Shigeo Arai,Takayoshi Tanji,Nobuo Tanaka,Akira Sakai, JOURNAL OF ELECTRONIC MATERIALS, SPRINGER, Vol. 44, No. 6, p. 2015-2020, 2015/06
  • Multi-scale characterization of defects in nitride semiconductor materials, 2015/05
  • Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy, Takuji Arauchi,Shotaro Takeuchi,Yasuhiro Hashimoto,Yoshiaki Nakamura,Keisuke Yamane,Narihito Okada,Yasuhiko Imai,Shigeru Kimura,Kazuyuki Tadatomo,Akira Sakai, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, WILEY-V C H VERLAG GMBH, Vol. 252, No. 5, p. 1149-1154, 2015/05
  • Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films grown on (22-43) patterned sapphire substrates, Shotaro Takeuchi,Toshiro Uchiyama,Takuji Arauchi,Yasuhiro Hashimoto,Yoshiaki Nakamura,Keisuke Yamane,Narihito Okada,Kazuyuki Tadatomo,Akira Sakai, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, WILEY-V C H VERLAG GMBH, Vol. 252, No. 5, p. 1142-1148, 2015/05
  • Anomalous reduction of thermal conductivity in coherent nanocrystal architecture for silicon thermoelectric material, Nakamura Yoshiaki,Isogawa Masayuki,Ueda Tomohiro,Yamasaka Shuto,Matsui Hideki,Kikkawa Jun,Ikeuchi Satoaki,Oyake Takafumi,Hori Takuma,Shiomi Junichiro,Sakai Akira, NANO ENERGY, Vol. 12, p. 845-851, 2015/03
  • Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template, D. T. Khan,S. Takeuchi,Y. Nakamura,K. Nakamura,T. Arauchi,H. Miyake,K. Hiramatsu,Y. Imai,S. Kimura,A. Sakai, JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, Vol. 411, p. 38-44, 2015/02
  • Myoglobin-based non-precious metal carbon catalysts for an oxygen reduction reaction, Akira Onoda,Yuta Tanaka,Toshikazu Ono,Shotaro Takeuchi,Akira Sakai,Takashi Hayashi, JOURNAL OF PORPHYRINS AND PHTHALOCYANINES, WORLD SCI PUBL CO INC, Vol. 19, No. 1-3, p. 510-516, 2015/01
  • Microstructure Analysis of a Thick AIN Film Grown on a Trench-Patterned AIN/Sapphire Template by X-Ray Microdiffraction, 2014/11
  • In situ doped epitaxial growth of highly dopant-activated n(+)-Ge layers for reduction of parasitic resistance in Ge-nMISFETs, Yoshihiko Moriyama,Yuuichi Kamimuta,Yoshiki Kamata,Keiji Ikeda,Akira Sakai,Tsutomu Tezuka, APPLIED PHYSICS EXPRESS, IOP PUBLISHING LTD, Vol. 7, No. 10, 2014/10
  • Self-assembly of Ge clusters on highly oriented pyrolytic graphite surfaces, Masayuki Shimonaka,Yoshiaki Nakamura,Jun Kikkawa,Akira Sakai, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 628, p. 82-85, 2014/10
  • Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films on (22-43) patterned sapphire substrate, 2014/08
  • Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction, 2014/08
  • Behaviors of dislocations in GaN crystals grown on point seeds in the Na-Flux coalescence growth, 2014/08
  • Electrical conduction characteristics of single crystal and directly-bonded Nb-doped SrTiO3, R. Asada,S. Kondo,S. Takeuchi,Y. Sugi,Y. Nakamura,A. Sakai, 2014/08
  • Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers, Yoshihiko Moriyama,Keiji Ikeda,Shotaro Takeuchi,Yuuichi Kamimuta,Yoshiaki Nakamura,Koji Izunome,Akira Sakai,Tsutomu Tezuka, APPLIED PHYSICS EXPRESS, IOP PUBLISHING LTD, Vol. 7, No. 8, p. 086501-1-086501-4, 2014/08
  • Thermal and electrical properties of Si films including epitaxial Ge nanodot phonon-scatterers, 2014/07
  • Dislocation behavior of surface-oxygen-concentration controlled Si wafers, Hirotada Asazu,Shotaro Takeuchi,Hiroya Sannai,Haruo Sudo,Koji Araki,Yoshiaki Nakamura,Koji Izunome,Akira Sakai, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 557, p. 106-109, 2014/04
  • Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template, Takuji Arauchi,Shotaro Takeuchi,Kunihiko Nakamura,Dinh Thanh Khan,Yoshiaki Nakamura,Hideto Miyake,Kazumasa Hiramatsu,Akira Sakai, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, WILEY-V C H VERLAG GMBH, Vol. 211, No. 4, p. 731-735, 2014/04
  • Improvement effect of electrical properties in post- annealed waferbonded Ge(001)- OI substrate, Shuto Yamasaka,Yoshiaki Nakamura,Osamu Yoshitake,Jun Kikkawa,Koji Izunome,Akira Sakai, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, WILEY-V C H VERLAG GMBH, Vol. 211, No. 3, p. 601-605, 2014/03
  • Anomalous reduction of thermal conductivity of stacked epitaxial Si nanodot structures, 2014/02
  • Introduction of Ultrahigh Density Ge Nanodots into Si Films for Si Based Thermoelectric Materials, 2014/02
  • Erratum: cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template (J. Cryst. Growth (2013) 381 (37-42), DOI: 10.1016/j.jcrysgro.2013.07.012), D. T. Khan,S. Takeuchi,J. Kikkawa,Y. Nakamura,H. Miyake,K. Hiramatsu,Y. Imai,S. Kimura,O. Sakata,A. Sakai, Journal of Crystal Growth, Elsevier, Vol. 388, 2014
  • Improvement of Current Drive of Ge-nMISFETs by Epitaxially Grown n(+)-Ge:P Source and Drain, Yoshihiko Moriyama,Yuuichi Kamimuta,Yoshiki Kamata,Keiji Ikeda,Shotaro Takeuchi,Yoshiaki Nakamura,Akira Sakai,Tsutomu Tezuka, 2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), IEEE, p. 35-36, 2014
  • Improvement effect of electrical properties in post-annealed wafer-bonded Ge(001)-OI substrate, Shuto Yamasaka,Yoshiaki Nakamura,Osamu Yoshitake,Jun Kikkawa,Koji Izunome,Akira Sakai, Physica Status Solidi (A) Applications and Materials Science, Vol. 211, No. 3, p. 601-605, 2014
  • Syncnrotron kadiation based X-ray iviicroaiffraction of advanced semiconductor materials, Akira Sakai, ECS Transactions, Electrochemical Society Inc., Vol. 64, No. 11, p. 255-263, 2014
  • Improvement of Current Drive of Ge-nMISFETs by Epitaxially Grown n(+)-Ge:P Source and Drain, Yoshihiko Moriyama,Yuuichi Kamimuta,Yoshiki Kamata,Keiji Ikeda,Shotaro Takeuchi,Yoshiaki Nakamura,Akira Sakai,Tsutomu Tezuka, 2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM), IEEE, p. 35-36, 2014
  • Control of epitaxial growth of Fe-based nanocrystals on Si substrates using well-controlled nanometer-sized interface, Yoshiaki Nakamura,Ryota Sugimoto,Takafumi Ishibe,Hideki Matsui,Jun Kikkawa,Akira Sakai, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 115, No. 4, 2014/01
  • Local strain distribution in AlN thick films analyzed by X-ray microdiffraction, 2013/12
  • Microscopic structure analysis of a thick AIN film grown on a trench-patterned AIN/sapphire template by X-ray microdiffraction, 2013/09
  • Variation of local residual strain and twist angle in growth direction of AIN films on trench-patterned 6H-SiC substrates, 2013/09
  • In-situ P-doped Ge-rich SiGe selective epitaxy for strained Ge-nMISFETs, Y. Moriyama,Y. Kamimuta,Y. Kamata,K. Ikeda,S. Takeuchi,A. Sakai,T. Tezuka, 2013/09
  • Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas, Hironobu Hamanaka,Yoshiaki Nakamura,Takafumi Ishibe,Jun Kikkawa,Akira Sakai, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 114, No. 11, 2013/09
  • Characterization of Ge Films on Si(001) Substrates Grown by Nanocontact Epitaxy, Wataru Ikeda,Yoshiaki Nakamura,Shogo Okamoto,Shotaro Takeuchi,Jun Kikkawa,Masakazu Ichikawa,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 52, No. 9, 2013/09
  • Anisotropic crystalline morphology of epitaxial thick AIN films grown on triangular-striped AIN/sapphire template, 2013/08
  • Epitaxial growth of stacked β-FeSi2 nanodots on Si substrates and their thermoelectric properties, 2013/07
  • Introduction of Ge nanodots in Si films as phonon scatterers and the thermal conductivity reduction, 2013/07
  • Dislocation behavior of surface-oxygen-concentration controlled Si wafers, 2013/06
  • Quantitative evaluation of bonding strength of hybrid-box GeOI, 2013/06
  • Reduction of contact resistance on selectively grown phosphorus-doped n+-Ge layers, 2013/06
  • Semiconductor wafer bonding -Structural and electrical characteristics of GeOI substrates, A. Sakai,S. Yamasaka,Y. Moriyama,J. Kikkawa,S. Takeuchi,Y. Nakamura,T. Tezuka,K. Izunome, 2013 Asia-Pacific Workshop on Fundamentals and applications of Advanced Semmiconductor Devices, 2013/06
  • Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers, Yoshihiko Moriyama,Keiji Ikeda,Yuuichi Kamimuta,Minoru Oda,Toshifumi Irisawa,Yoshiaki Nakamura,Akira Sakai,Tsutomu Tezuka, SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 83, p. 42-45, 2013/05
  • Formation mechanism of peculiar structures on vicinal Si(1 1 0) surfaces, M. Yamashita,Y. Nakamura,R. Sugimoto,J. Kikkawa,K. Izunome,A. Sakai, Applied Surface Science, Vol. 267, p. 53-57, 2013/02/15
  • Structural analysis of vicinal Si(110) surfaces with various off-angles, M. Yamashita,Y. Nakamura,A. Yamamoto,J. Kikkawa,K. Izunome,A. Sakai, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 267, p. 136-140, 2013/02
  • Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al<inf>2</inf>O<inf>3</inf> template, D. T. Khan,S. Takeuchi,J. Kikkawa,Y. Nakamura,H. Miyake,K. Hiramatsu,Y. Imai,S. Kimura,O. Sakata,A. Sakai, Journal of Crystal Growth, Vol. 381, p. 37-42, 2013
  • Distribution of Local Strain in Facet Controlled ELO (FACELO) GaN by X-ray Micro Diffraction, 2012/12
  • Cross-sectional X-ray Microdiffraction Study of Residual Strain Distribution in a Thick AlN Film Grown on a Trench-patterned AlN/α-Al2O3 Template, 2012/12
  • Structural- and electrical characteristics of GeOI/BOX interfaces of bonded GeOI substrates with thin Al2O3/SiO2 hybrid BOX layers, 2012/11
  • Investigation of semiconductor nanostructures using focused X-ray beams, A. Sakai, NanoMalaysia Summit and Expo 2012, 2012/11
  • Formation technique of stacked epitaxial Si nanodot structures and their thermal conductivity, 2012/11
  • Local strain distribution in a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template measured by X-ray microdiffraction, 2012/10
  • Vertical dislocations in Ge films selectively grown in submicron Si windows of patterned substrates, S. Harada,J. Kikkawa,Y. Nakamura,G. Wang,M. Caymax,A. Sakai, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 520, No. 8, p. 3245-3248, 2012/02
  • Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method, K. Minami,Y. Nakamura,S. Yamasaka,O. Yoshitake,J. Kikkawa,K. Izunome,A. Sakai, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 520, No. 8, p. 3232-3235, 2012/02
  • GOI Substrates -Fabrication and Characterization-, A. Sakai,S. Yamasaka,J. Kikkawa,S. Takeuchi,Y. Nakamura,Y. Moriyama,T. Tezuka,K. Izunome, SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, Vol. 50, No. 9, p. 709-725, 2012
  • Characterization of Ge films on Si(001) substrates grown by nanocontact epitaxy, Yoshiaki Nakamura,Wataru Ikeda,Jun Kikkawa,Masakazu Ichikawa,Akira Sakai, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, p. 158-159, 2012
  • Fabrication of bonded GeOI substrates with thin Al 2O 3/SiO 2 buried oxide layers, Yoshihiko Moriyama,Keiji Ikeda,Yuuichi Kamimuta,Minoru Oda,Toshifumi Irisawa,Yoshiaki Nakamura,Akira Sakai,Tsutomu Tezuka, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, p. 34-35, 2012
  • Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process, T. Kato,Y. Nakamura,P. P. T. Son,J. Kikkawa,A. Sakai, DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, TRANS TECH PUBLICATIONS LTD, Vol. 725, p. 261-264, 2012
  • Fabrication of bonded GeOI substrates with thin Al 2O 3/SiO 2 buried oxide layers, Yoshihiko Moriyama,Keiji Ikeda,Yuuichi Kamimuta,Minoru Oda,Toshifumi Irisawa,Yoshiaki Nakamura,Akira Sakai,Tsutomu Tezuka, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings, p. 34-35, 2012
  • First Demonstration of Threshold Voltage Control by Sub-1V Back-gate Biasing for Thin Body and Buried-oxide (TBB) Ge-on-Insulator (GOI) MOSFETs for Low-power Operation, Keiji Ikeda,Yoshihiko Moriyama,Mizuki Ono,Yuuichi Kamimuta,Toshifumi Irisawa,Yoshiki Kamata,Akira Sakai,Tsutomu Tezuka, IEEE INTERNATIONAL SOI CONFERENCE, IEEE, 2012
  • GOI Substrates -Fabrication and Characterization-, A. Sakai,S. Yamasaka,J. Kikkawa,S. Takeuchi,Y. Nakamura,Y. Moriyama,T. Tezuka,K. Izunome, SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, Vol. 50, No. 9, p. 709-725, 2012
  • Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process, T. Kato,Y. Nakamura,P. P. T. Son,J. Kikkawa,A. Sakai, DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, TRANS TECH PUBLICATIONS LTD, Vol. 725, p. 261-264, 2012
  • X-ray microdiffraction study of three-dimensional distribution of local strain in thick AlN film grown on a trench-patterned AlN/a-Al2O3 template, D. T. Khan,S. Harada,J. Kikkawa,Y. Nakamura,H. Miyake,K. Hiramatsu,Y. Imai,S. Kimura,O. Sakata,A. Sakai, 15th International Conference on Thin Films, 2011/11
  • Formation of ultrahigh density iron oxide nanodots on Si substrates with nanometer-sized interfaces, K. Tanaka,Y. Nakamura,H. Harada,J. Kikkawa,A. Sakai, 7th Handai Nanoscience and Nanotechnology International Symposium, 2011/11
  • Growth of vanadium dioxides nanowires using vanadyl acetylacetonate, T. Ishibe,J. Kikkawa,Y. Nakamura,A. Sakai, 7th Handai Nanoscience and Nanotechnology International Symposium, 2011/11
  • Electric-field control of spin accumulation signals in silicon at room temperature, Y. Ando,Y. Maeda,K. Kasahara,S. Yamada,K. Masaki,Y. Hoshi,K. Sawano,K. Izunome,A. Sakai,M. Miyao,K. Hamaya, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 99, No. 13, p. 132511-1-132511-3, 2011/09
  • Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using a four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method, K. Minami,Y. Nakamura,S. Yamasaka,O. Yoshitake,J. Kikkawa,K. Izunome,A. Sakai, 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), 2011/08
  • Ge1-xSnx stressors for strained-Ge CMOS, S. Takeuchi,Y. Shimura,T. Nishimura,B. Vincent,G. Eneman,T. Clarysse,J. Demeulemeester,A. Vantomme,J. Dekoster,M. Caymax,R. Loo,A. Sakai,O. Nakatsuka,S. Zaima, SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 60, No. 1, p. 53-57, 2011/06
  • Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition, Kazuya Isiizumi,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Junichi Yanagisawa, Jpn. J. Appl. Phys., Vol. 50, No. 6, 2011/06
  • Control of strain relaxation behavior of Ge1-xSnx buffer layers, Yosuke Shimura,Shotaro Takeuchi,Osamu Nakatsuka,Akira Sakai,Shigeaki Zaima, SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 60, No. 1, p. 84-88, 2011/06
  • X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(001) substrates, Kouhei Ebihara,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Gang Wang,Matty Caymax,Yasuhiko Imai,Shigeru Kimura,Osami Sakata, SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 60, No. 1, p. 26-30, 2011/06
  • Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates, Osamu Yoshitake,Jun Kikkawa,Yoshiaki Nakamura,Eiji Toyoda,Hiromichi Isogai,Koji Izunome,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, Vol. 50, No. 4, p. 04DA13-1-04DA13-4, 2011/04
  • Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal-Oxide-Semiconductor Field-Effect Transistor, Yuji Iwasaki,Yoshiaki Nakamura,Jun Kikkawa,Motoki Sato,Eiji Toyoda,Hiromichi Isogai,Koji Izunome,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, Vol. 50, No. 4, p. 04DA14-1-04DA14-4, 2011/04
  • Self-organization of two-dimensional SiGe nanodot arrays using selective etching of pure-edge dislocation network, Yoshiaki Nakamura,Masahiko Takahashi,Tatsuki Fujiwara,Jun Kikkawa,Akira Sakai,Osamu Nakatsuka,Shigeaki Zaima, JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, Vol. 109, No. 4, p. 044301-1-044301-4, 2011/02
  • Nanometer-scale Characterization Technique for Si Nanoelectric Materials using Synchrotron Radiation Microdiffraction, Shigeru Kimura,Yasuhiko Imai,Osami Sakata,Akira Sakai, TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, TRANS TECH PUBLICATIONS LTD, Vol. 470, p. 104-+, 2011
  • Microscopic Structure of Directly Bonded Silicon Substrates, Tetsuji Kato,Yuji Ohara,Takaya Ueda,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima,Eiji Toyoda,Hiromichi Isogai,Takeshi Senda,Kouji Izunome,Hiroo Tajiri,Osamu Sakata,Shigeru Kimura, TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, TRANS TECH PUBLICATIONS LTD, Vol. 470, p. 164-+, 2011
  • Structural Change during the Formation of Directly Bonded Silicon Substrates, Tetsuji Kato,Takaya Ueda,Yuji Ohara,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Osamu Nakatsuka,Shigeaki Zaima,Eiji Toyoda,Kouji Izunome,Yasuhiko Imai,Shigeru Kimura,Osamu Sakata, TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, TRANS TECH PUBLICATIONS LTD, Vol. 470, p. 158-+, 2011
  • Strained Ge and Ge1-xSnx Technology for Future CMOS Devices, Osamu Nakatsuka,Shotaro Takeuchi,Yosuke Shimura,Akira Sakai,Shigeaki Zaima, TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, TRANS TECH PUBLICATIONS LTD, Vol. 470, p. 146-+, 2011
  • Nanometer-scale Characterization Technique for Si Nanoelectric Materials using Synchrotron Radiation Microdiffraction, Shigeru Kimura,Yasuhiko Imai,Osami Sakata,Akira Sakai, TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, TRANS TECH PUBLICATIONS LTD, Vol. 470, p. 104-+, 2011
  • Microscopic Structure of Directly Bonded Silicon Substrates, Tetsuji Kato,Yuji Ohara,Takaya Ueda,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima,Eiji Toyoda,Hiromichi Isogai,Takeshi Senda,Kouji Izunome,Hiroo Tajiri,Osamu Sakata,Shigeru Kimura, TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, TRANS TECH PUBLICATIONS LTD, Vol. 470, p. 164-+, 2011
  • Structural Change during the Formation of Directly Bonded Silicon Substrates, Tetsuji Kato,Takaya Ueda,Yuji Ohara,Jun Kikkawa,Yoshiaki Nakamura,Akira Sakai,Osamu Nakatsuka,Shigeaki Zaima,Eiji Toyoda,Kouji Izunome,Yasuhiko Imai,Shigeru Kimura,Osamu Sakata, TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS, TRANS TECH PUBLICATIONS LTD, Vol. 470, p. 158-+, 2011
  • Structural Analysis of Si-based Nanodot Arrays Self-organized by Selective Etching of SiGe/Si Films, M. Takahashi,Y. Nakamura,J. Kikkawa,O. Nakatsuka,S. Zaima,A. Sakai, 18th International Colloquium on Scanning Probe Microscopy (ICSPM18), 2010/12
  • Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET, Y. Iwasaki,Y. Nakamura,J. Kikkawa,A. Sakai,M. Sato,E. Toyoda,H. Isogai,K. Izunome, 2010/09
  • Annealing effects on Ge/SiO<sup>2</sup> interface structure in wafer-bonded germanium-on-insulator substrates, O. Yoshitake,J. Kikkawa,Y. Nakamura,A. Sakai,E. Toyoda,H. Isogai,K. Izunome, 2010/09
  • Formation of Ge1-xSnx heteroepitaxial layers with high Sn content, 2010/06
  • Formation of ultrahigh density iron-based nanodots on Si (111) substrates using ultrathin SiO2 films, H. Hamanaka,Y. Nakamura,K. Tanaka,J. Kikkawa,A. Sakai, Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010), 2010/06
  • Four-point-probe pseudo-MOSFET analysis of wafer-bonded germanium-on-insulator substrates, Y. Iwasaki,Y. Nakamura,J. Kikkawa,A. Sakai,M. Sato,E. Toyoda,H. Isogai,K. Izunome, Intenational Symposium on Technology Evolution for Silicon Nano-Electronics, 2010/06
  • Transmission electron microscopy observation of Ge/SiO2 interfaces in wafer-bonded germanium-on-insulator substrates, O. Yoshitake,J. Kikkawa,Y. Nakamura,A. Sakai,E. Toyoda,H. Isogai,K. Izunome, Intenational Symposium on Technology Evolution for Silicon Nano-Electronics, 2010/06
  • Formation of Ge1-xSnx heteroepitaxial layers with high Sn content, Y. Shimura,S. Takeuchi,O. Nakatsuka,A. Sakai,S. Zaima, Intenational Symposium on Technology Evolution for Silicon Nano-Electronics, 2010/06
  • Bi-axially strained Ge grown on GeSn SRBs, 2010/05
  • Strain and domain texture of Ge films selectively grown in localized regions on Si(001) substrates, K. Ebihara,J. Kikkawa,Y. Nakamura,A. Sakai,G. Wang,M. Caymax,Y. Imai,S. Kimura,O. Sakata, The fifth International SiGe Technology and Device Meeting, 2010/05
  • Annealing Effects on Ge/SiO2 Interfaces in Wafer-Bonded GOI Substrates, O. Yoshitake,J. Kikkawa,Y. Nakamura,A. Sakai,E. Toyoda,H. Isogai,K. Izunome, International Conference on Core Research and Engineering Science of Advanced Materials (Global COE Program) & Third International Conference on Nanospintronics Design and Realization, 3rd-ICNDR, 2010/05
  • High-resolution X-ray microdiffraction analysis of local strain in semiconductor materials, Shigeru Kimura,Yasuhiko Imai,Osami Sakata,Akira Sakai, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, p. 1506-1509, 2010
  • Two-dimensional nanoarray of SiGe nanodots self-organized by selective etching method of edge dislocation network, Nakamura Yoshiaki,Takahashi Masahiko,Kikkawa Jun,Nakatsuka Osamu,Zaima Shigeaki,Sakai Akira, Abstract of annual meeting of the Surface Science of Japan, The Surface Science Society of Japan, Vol. 30, No. 0, p. 223-223, 2010
  • Characterization of wafer-bonded substrates for advanced channels in Si-based MOSFET, Akira Sakai, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, p. 1517-1520, 2010
  • Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices, S. Takeuchi,Y. Shimura,T. Nishimura,B. Vincent,G. Eneman,T. Clarysse,J. Demeulemeester,K. Temst,A. Vantomme,J. Dekoster,M. Caymax,R. Loo,O. Nakatsuka,A. Sakai,S. Zaima, SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, Vol. 33, No. 6, p. 529-535, 2010
  • X-Ray Microdiffraction Study on Crystallinity of Micron-Sized Ge Films Selectively Grown on Si(001) Substrates, K. Ebihara,S. Harada,J. Kikkawa,Y. Nakamura,A. Sakai,G. Wang,M. Caymax,Y. Imai,S. Kimura,O. Sakata, SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, Vol. 33, No. 6, p. 887-892, 2010
  • Strain relaxation behavior of Ge1-xSnx buffer layers on Si and virtual Ge substrates, 2010/01
  • Potential of Ge1-xSnx alloys as high mobility channel materials and stressors, 2010/01
  • Microscopic characterization of Si(011)/Si(001) direct silicon bonding substrates, T. Kato,T. Ueda,Y. Ohara,J. Kikkawa,Y. Nakamura,A. Sakai,O. Nakatsuka,S. Zaima,E. Toyoda,K. Izunome,Y. Imai,S. Kimura,O. Sakata, 5th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2010/01
  • Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor, Hiroki Kondo,Shinnya Sakurai,Mitsuo Sakashita,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, Applied Physics Letters, Vol. 96, No. 1, 2010
  • Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices, S. Takeuchi,Y. Shimura,T. Nishimura,B. Vincent,G. Eneman,T. Clarysse,J. Demeulemeester,K. Temst,A. Vantomme,J. Dekoster,M. Caymax,R. Loo,O. Nakatsuka,A. Sakai,S. Zaima, SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, Vol. 33, No. 6, p. 529-535, 2010
  • X-Ray Microdiffraction Study on Crystallinity of Micron-Sized Ge Films Selectively Grown on Si(001) Substrates, K. Ebihara,S. Harada,J. Kikkawa,Y. Nakamura,A. Sakai,G. Wang,M. Caymax,Y. Imai,S. Kimura,O. Sakata, SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, Vol. 33, No. 6, p. 887-892, 2010
  • Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor, Hiroki Kondo,Shinnya Sakurai,Mitsuo Sakashita,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 96, No. 1, p. 12105-1-12105-3, 2010/01
  • High-Angular-Resolution Microbeam X-Ray Diffraction with CCD Detector, Yasuhiko Imai,Shigeru Kimura,Osami Sakata,Akira Sakai, X-RAY OPTICS AND MICROANALYSIS, PROCEEDINGS, AMER INST PHYSICS, Vol. 1221, No. 1, p. 30-+, 2010
  • Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates, Osamu Nakatsuka,Norimasa Tsutsui,Yosuke Shimura,Shotaro Takeuchi,Akira Sakai,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 49, No. 4, p. 04DA10-1-04DA10-4, 2010
  • Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology, N. D. Nguyen,E. Rosseel,S. Takeuchi,J-L. Everaert,L. Yang,J. Goossens,A. Moussa,T. Clarysse,O. Richard,H. Bender,S. Zaima,A. Sakai,R. Loo,J. C. Lin,W. Vandervorst,M. Caymax, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 518, No. 6, p. S48-S52, 2010/01
  • Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing, T. Kato,Y. Nakamura,J. Kikkawa,A. Sakai,E. Toyoda,K. Izunome,O. Nakatsuka,S. Zaima,Y. Imai,S. Kimura,O. Sakata, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 518, No. 6, p. S147-S150, 2010/01
  • Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1-xGex structures on Si(001) substrates, Takuya Mizutani,Osamu Nakatsuka,Akira Sakai,Hiroki Kondo,Masaki Ogawa,Shigeaki Zaima, SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 53, No. 11, p. 1198-1201, 2009/11
  • Surface structural analysis of off-angled Si(110) substrates, M. Yamashita,Y. Nakamura,J. Kikkawa,A. Sakai,E. Toyoda,M. Sato,H. Isogai,K. Izunome, 5th Handai Nanoscience and Nanotechnology International Symposium, 2009/09
  • Microstructures in directly bonded Si substrates, Y. Ohara,T. Ueda,A. Sakai,O. Nakatsuka,M. Ogawa,S. Zaima,E. Toyoda,H. Isogai,T. Senda,K. Izunome,H. Tajiri,O. Sakata,S. Kimura,T. Sakata,H. Mori, SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 53, No. 8, p. 837-840, 2009/08
  • Effect of annealing on mechanical properties of materials formed by focused au or si lon-beam-induced chemical vapor deposition using phenanthrene, Takuma Yo,Hideaki Tanaka,Takahiro Nagata,Naoki Fukata,Toyohiro Chikyow,Akira Sakai,Junichi Yanagisawa, Japanese Journal of Applied Physics, Vol. 48, No. 6, p. 06-FB034, 2009/06
  • Formation and characterization of tensile-strained Ge layers on Ge1-xSnx buffer layers, S. Zaima,O. Nakatsuka,Y. Shimura,N. Tsutsui,A. Sakai, The 6th International Conference on Silicon Epitaxy and Heterostructures, 2009/05
  • Low Temperature Growth of Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers, Y. Shimura,N. Tsutsui,O. Nakatsuka,A. Sakai,S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, 2009/05
  • Analysis of Local Strain in Ge1-xSnx /Ge/Si(001) Heterostructures by X-ray Microdiffraction, O. Nakatsuka,Y. Shimura,N. Tsutsui,A. Sakai,Y. Imai,H. Tajiri,O. Sakata,S. Kimura,S. Zaima, The 6th International Conference on Silicon Epitaxy and Heterostructures, 2009/05
  • Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing, T. Kato,T. Ueda,Y. Ohara,J. Kikkawa,Y. Nakamura,A. Sakai,O. Nakatsuka,S. Zaima,E. Toyoda,K. Izunome,Y. Imai,S. Kimura,O. Sakata, The 6th International Conference on Silicon Epitaxy and Heterostructures, 2009/05
  • Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers, Yosuke Shimura,Norimasa Tsutsui,Osamu Nakatsuka,Akira Sakai,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 48, No. 4, p. 04C130-1-04C130-4, 2009/04
  • Thermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodes, Hiroki Kondo,Kouhei Furumai,Mitsuo Sakashita,Akira Sakai,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 48, No. 4, p. 04C012-1-04C012-5, 2009/04
  • Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates, Eiji Toyoda,Akira Sakai,Hiromichi Isogai,Takeshi Senda,Koji Izunome,Kazuhiko Omote,Osamu Nakatsuka,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 48, No. 2, p. 021208-1-021208-4, 2009/02
  • Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge<sub>1-x</sub>Sn<sub>x</sub> Buffer Layer, Shimura Yosuke,Tsutsui Norimasa,Nakatsuka Osamu,Sakai Akira,Zaima Shigeaki, Transactions of the Materials Research Society of Japan, The Materials Research Society of Japan, Vol. 34, No. 2, p. 301-304, 2009
  • Mechanical Properties and Chemical Reactions at the Directly Bonded Si-Si Interface, Eiji Toyoda,Akira Sakai,Hiromichi Isogai,Takeshi Senda,Koji Izunome,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 48, No. 1, p. 011202-1-011202-5, 2009/01
  • Formation of Uniaxial Tensile-strained Ge by using Micro-patterning of Ge/Si1-xGex/Si Structures, T. Mizutani,O. Nakatsuka,A. Sakai,H. Kondo,S. Zaima, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), 2008/12
  • Formation and Characterization of Tensile-strained Ge layers on Ge1-xSnx Buffer Layers, Y. Shimura,N. Tsutsui,O. Nakatsuka,A. Sakai,S. Zaima, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), 2008/12
  • Strain and interfacial defects in directly bonded Si substrates, Y. Ohara,T. Ueda,A. Sakai,O. Nakatsuka,S. Zaima,E. Toyoda,K. Izunome,H. Tajiri,O. Sakata,S. Kimura, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), 2008/12
  • Atomistic analysis of directly bonded Si substrate interface, T. Ueda,Y. Ohara,A. Sakai,O. Nakatsuka,S. Zaima,E. Toyoda,K. Izunome,T. Sakata,H. Mori, The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), 2008/12
  • Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates, E. Toyoda,A. Sakai,O. Nakatsuka,H. Isogai,T. Senda,K. Izunome,K. Omote,S. Zaima, The 5th International Symposium on Advanced Science and Technology of Silicon Materials, Vol. 48, No. 2, 2008/11
  • Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates, Shotaro Takeuchi,Akira Sakai,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 517, No. 1, p. 159-162, 2008/11
  • Silicide and germanide technology for contacts and gates in MOSFET applications, Shigeaki Zaima,Osamu Nakatsuka,Hiroki Kondo,Mitsuo Sakashita,Akira Sakai,Masaki Ogawa, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 517, No. 1, p. 80-83, 2008/11
  • Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films, Hiroki Kondo,Tomonori Ueyama,Eiji Ikenaga,Keisuke Kobayashi,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 517, No. 1, p. 297-299, 2008/11
  • Characterization of bonding structures of directly bonded hybrid crystal orientation substrates, E. Toyoda,A. Sakai,O. Nakatsuka,H. Isogai,T. Senda,K. Izunome,M. Ogawa,S. Zaima, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 517, No. 1, p. 323-326, 2008/11
  • Annealing Effect of Deposited Materials formed byFocused Au Ion Beam-induced Chemical Vapor Deposition using Phenanthrene, T. Yo,H. Tanaka,T. Nagata,N. Fukata,T. Chikyow,A. Sakai,J. Yanagisawa, Digest of Papers 2008 International Microprocess and Nanotechnology Conference, 2008/10
  • Formation of Tensile-Strained Ge Layers on Ge_<1-x>Sn_x Buffer Layers and Control of Strain and Dislocation Structures, NAKATSUKA Osamu,SHIMURA Yosuke,ZAIMA Shigeaki,SAKAI Akira, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics, Vol. 2008, No. 24, p. 25-29, 2008/09/27
  • Control of Sn Precipitation and Strain relaxation in Compositionally Step-graded Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers, Y. Shimura,N. Tsutsui,O. Nakatsuka,A. Sakai,S. Zaima, 2008 International Conference on Solid State Devices and Materials (SSDM), 2008/09
  • Analysis of Uniaxial Tensile Strain in Microfabricated Ge/Si1-x Gex Structures on Si(001) Substrates, T. Mizutani,O. Nakatsuka,A. Sakai,H. Kondo,S. Zaima, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2008/09
  • Formation and Characterization of Compositionally Step-graded Ge1-x Snx Buffer Layers for Tensile-strained Ge Layers, Y. Shimura,N. Tsutsui,O. Nakatsuka,A. Sakai,S. Zaima, 4th International WorkShop on New Group IV Semiconductor Nanoelectronics, 2008/09
  • Effect of alcohol sources on synthesis of single-walled carbon nanotubes, Satoshi Oida,Akira Sakai,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 254, No. 23, p. 7697-7702, 2008/09
  • Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates, Masahiro Yamazaki,Shotaro Takeuchi,Osamu Nakatsuka,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 254, No. 19, p. 6048-6051, 2008/07
  • MOCVD法によるPr酸化膜の作製およびその電気的特性評価, Vol. 108, No. 80, 2008/06
  • Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using AuSi alloyed metal source, Takuma Yo,Hideaki Tanaka,Kakunen Koreyama,Takahiro Nagata,Yoshiki Sakuma,Kiyomi Nakajima,Toyohiro Chikyow,Junichi Yanagisawa,Akira Sakai, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY APPLIED PHYSICS, Vol. 47, No. 6, p. 5018-5021, 2008/06
  • Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method, Shotaro Takeuchi,Yosuke Shimura,Osamu Nakatsuka,Shigeaki Zaima,Masaki Ogawa,Akira Sakai, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 92, No. 23, p. 231916-1-231916-3, 2008/06
  • Microstructures in Directly Bonded Si Substrates, A. Sakai,Y. Ohara,T. Ueda,O. Nakatsuka,M. Ogawa,S. Zaima,E. Toyoda, Abstract Book of The fourth International SiGe Technology and Device Meeting, 2008/05
  • Effect of Hydrogen on Initial Growth of Sn and Ge1-xSnx on Ge(001) substrates, M. Yamazaki,O. Nakatsuka,T. Shinoda,A. Sakai,M. Ogawa,S. Zaima, Abstract Book of The fourth International SiGe Technology and Device Meeting, 2008/05
  • Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates, E. Toyoda,A. Sakai,O. Nakatuka,S. Zaima,M. Ogawa,H. Isogai,T. Senda,K. Izunome,K. Omote, Abstract Book of The fourth International SiGe Technology and Device Meeting, Vol. 48, No. 2, 2008/05
  • Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth, Satoshi Oida,Akira Sakai,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 47, No. 5, p. 3742-3747, 2008/05
  • Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates, T. Mizutani,O. Nakatsuka,A. Sakai,H. Kondo,M. Ogawa,S. Zaima, Abstract Book of The fourth International SiGe Technology and Device Meeting, p. 149-150, 2008/05
  • Crystalline and electrical properties of mictamict TiSiN gate metal-oxcide-semiconductor capacitors, Kouhei Furumai,Hiroki Kondo,Mitsuo Sakashita,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 47, No. 4, p. 2420-2424, 2008/04
  • Development of high-density radical source for radical nitridation process in ULSI technology development of high-density radical source for radical nitridation process in ULSI technology, H. Kondo,S. Oda,S. Takashima,A. Sakai,M. Ogawa,S. Zaima,M. Hori,S. Den,H. Kano, The International Conference on Plasma-NanoTechnology and Science, 2008/03
  • Contact properties of epitaxial NiSi<inf>2</inf>/heavily doped Si structures formed from Ni/Ti/Si systems, S. Akimoto,O. Nakatsuka,A. Suzuki,A. Sakai,M. Ogawa,S. Zaima, Advanced Metallization Conference (AMC), p. 101-105, 2008
  • Interface and defect control for group IV channel engineering, A. Sakai,Y. Ohara,T. Ueda,E. Toyoda,K. Izunome,S. Takeuchi,Y. Shimura,O. Nakatsuka,M. Ogawa,S. Zaima,S. Kimura, SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, Vol. 16, No. 10, p. 687-+, 2008
  • 窒素ラジカル暴露によるGe(001)表面処理, 2008/01
  • Ge基板上に作製したPr酸化膜の評価, 2008/01
  • ミクタミクトTiSiNゲートMOSキャパシタの結晶構造及び電気的特性の評価, 2008/01
  • Contact properties of epitaxial NiSi2/heavily doped Si structures formed from Ni/Ti/Si systems, S. Akimoto,O. Nakatsuka,A. Suzuki,A. Sakai,M. Ogawa,S. Zaima, ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), MATERIALS RESEARCH SOC, Vol. 23, p. 101-105, 2008
  • Interface and defect control for group IV channel engineering, A. Sakai,Y. Ohara,T. Ueda,E. Toyoda,K. Izunome,S. Takeuchi,Y. Shimura,O. Nakatsuka,M. Ogawa,S. Zaima,S. Kimura, SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, ELECTROCHEMICAL SOC INC, Vol. 16, No. 10, p. 687-+, 2008
  • Growth and characterization of tensile-strained Ge layers on strain relaxed Ge1-xSnx buffer layers, 2007/11
  • Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers, 2007/11
  • Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates, 2007/11
  • Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures, 2007/11
  • Characterization of Local Strains in Si1-xGex Hetero-mesa Structures on Si(001) Substrates by Using X-ray Microdiffraction, O. Nakatsuka,K. Yukawa,S. Mochizuki,A. Sakai,K. Fukuda,S. Kimura,O. Sakata,K. Izunome,T. Senda,E. Toyoda,M. Ogawa,S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, 2007/11
  • Defect Control for Ge/Si and Ge1-xSnx/Ge/Si Heterostructures, A. Sakai,S. Takeuchi,O. Nakatsuka,M. Ogawa,S. Zaima, Fifth International Symposium on Control of Semiconductor Interfaces, 2007/11
  • Growth and Characterization of Tensile-Strained Ge Layers on Strain Relaxed Ge1-xSnx Buffer Layers, O. Nakatsuka,S. Takeuchi,A. Sakai,M. Ogawa,S. Zaima, The 3nd international workshop on new group IV semiconductor nanoelectronics, 2007/11
  • Electrical and Crystalline Properties of Epitaxial NiSi2/Si Contacts Fromed in Ni/Ti/Si(001) Systems, O. Nakatsuka,A. Suzuki,S. Akimoto,A. Sakai,M. Ogawa,S. Zaima, The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing, 2007/11
  • Structural and Electrical Properties of Metal-germanide MOS Gate Electrodes, H. Kondo,D. Ikeno,Y. Kaneko,M. Sakashita,A. Sakai,M. Ogawa,S. Zaima, The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing, 2007/11
  • シリコン表面の窒化初期過程とエネルギーバンドキャップの形成, 2007/11
  • Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System, NAKATSUKA Osamu,SUZUKI Atsushi,AKIMOTO Shingo,SAKAI Akira,OGAWA Masaki,ZAIMA Shigeaki, Vol. 2007, p. 1038-1039, 2007/09/19
  • Pr-Oxide-Based Dielectric Films on Ge Substrates, SAKASHITA Mitsuo,KITO Nobuyuki,SAKAI Akira,KONDO Hiroki,NAKATSUKA Osamu,OGAWA Masaki,ZAIMA Shigeaki, Ext. Abstr. Int. Conf. Solid State Devices and Materials, Tsukuba, Japan, Sep. 2007, Vol. 2007, No. 85, p. 330-331, 2007/09/19
  • Surface treatment of Ge(001) surface by radical nitridation, H. Kondo,M. Fujita,A. Sakai,M. Ogawa,S. Zaima, Extended Abstracts of the 2007 International Conference on Solid State Device and Materials, 2007/09
  • Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors, K. Furumai,H. Kondo,M. Sakashita,A. Sakai,M. Ogawa,S. Zaima, Extended Abstracts of the 2007 International Conference on Solid State Device and Materials, 2007/09
  • Development of new high-density radical sources and its application to radical nitridation of Ge surfaces, H. Kondo,S. Oda,S. Takashima,A. Sakai,M. Ogawa,S. Zaima,M. Hori,S. Den,H. Kano, The 20th Symposium on Plasma Science for Materials, 2007/06
  • Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates, S. Takeuchi,A. Sakai,O. Nakatsuka,M. Ogawa,S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, 2007/05
  • Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films, H. Kondo,T. Ueyama,E. Ikenaga,K. Kobayashi,A. Sakai,M. Ogawa,S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, 2007/05
  • Characterization of bonding structures of directly bonded hybrid crystal orientation substrates, E. Toyoda,A. Sakai,H. Isogai,T. Senda,K. Izunome,O. Nakatsuka,M. Ogawa,S. Zaima, 5th International Conference on Silicon Epitaxy and Heterostructures, 2007/05
  • Strain and dislocations in group IV semiconductor heterostructures, A. Sakai,O. Nakatsuka,M. Ogawa,S. Zaima, 2007/04
  • Behavior of local charge-trapping sites in La2O3-Al2O3 composite films under constant voltage stress, Toshifumi Sago,Akiyoshi Seko,Mitsuo Sakashita,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 46, No. 4B, p. 1879-1884, 2007/04
  • Composition dependence of work function in metal (Ni,Pt)-germanide gate electrodes, Daisuke Ikeno,Yukihiro Kaneko,Hiroki Kondo,Mitsuo Sakashita,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 46, No. 4B, p. 1865-1869, 2007/04
  • Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using an AuSi alloyed metal source, T. Yo,H. Tanaka,K. Koreyama,T. Nagata,Y. Sakuma,K. Nakajima,T. Chikyow,J. Yanagisawa,A. Sakai, MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS, JAPAN SOCIETY APPLIED PHYSICS, p. 150-+, 2007
  • Silicide and germanide technology for contacts and metal gates in MOSFET applications, S. Zaima,O. Nakatsuka,H. Kondo,M. Sakashita,A. Sakai,M. Ogawa, ECS Transactions, Vol. 11, No. 6, p. 197-205, 2007
  • Impact of Pt incorporation on thermal stability of NiGe layers on Ge(001) substrates, Osamu Nakatsuka,Atsushi Suzuki,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007, p. 87-88, 2007
  • Pt-germanideゲート電極の結晶構造及び電気的特性の評価”, 2007/01
  • パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価, 2007/01
  • Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価, 2007/01
  • Growth and energy bandgap formation of silicon nitride films in radical nitridation, Hiroki Kondo,Keigo Kawaai,Akira Sakai,Masaru Hori,Shigeaki Zaima,Yukio Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 46, No. 1, p. 71-75, 2007/01
  • Rare-earth metal oxides and their silicates/aluminates as future gate dielectric films, Akira Sakai,Mitsuo Sakashita,Masaki Ogawa,Shigeaki Zaima, ECS Transactions, Vol. 6, No. 3, p. 99-118, 2007
  • Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates, Shogo Mochizuki,Akira Sakai,Osamu Nakatsuka,Hiroki Kondo,Katsunori Yukawa,Koji Izunome,Takeshi Senda,Eiji Toyoda,Masaki Ogawa,Shigeaki Zaima, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, Vol. 22, No. 1, p. S132-S136, 2007/01
  • Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates, Shotaro Takeuchi,Akira Sakai,Koji Yamamoto,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, Vol. 22, No. 1, p. S231-S235, 2007/01
  • Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies, Hideto Yanagisawa,Satoko Shinkai,Katsutaka Sasaki,Junpei Sakurai,Yoshio Abe,Akira Sakai,Shigeaki Zaima, JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, Vol. 297, No. 1, p. 80-86, 2006/12
  • Evaluation of trapped charge distributions in stressed gate SiO2 films using conductive atomic force microscopy, A. Seko,Y. Watanabe,M. Sakashita,A. Sakai,M. Ogawa,S. Zaima, 2006/11
  • Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system, Osamu Nakatsuka,Atsushi Suzuki,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, MICROELECTRONIC ENGINEERING, ELSEVIER SCIENCE BV, Vol. 83, No. 11-12, p. 2272-2276, 2006/11
  • Control of strain and dislocation structures in Ge_<1-x>Sn_x buffer layers on virtual Ge substrates, TAKEUCHI Shotaro,SAKAI Akira,NAKATSUKA Osamu,OGAWA Masaki,ZAIMA Shigeaki, The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics, Vol. 2006, No. 15, p. 19-24, 2006/10/03
  • Development of high-angular-resolution microdiffraction system for reciprocal space map measurements, Shingo Takeda,Shigeru Kimura,Osami Sakata,Akira Sakai, Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 37-41, p. L1054-L1056, 2006/10
  • Mosaicity and dislocations in strain-relaxed SiGe buffer layers on SOI substrates, O. Nakatsuka,N. Taoka,A. Sakai,S. Mochizuki,M. Ogawa,S. Zaima, 2006/10
  • Dislocation structure and strain relaxation of SiGe and Ge sub-micron stripe lines on Si(001) substrates, O. Nakatsuka,S. Mochizuki,A. Sakai,H. Kondo,K. Yukawa,M. Ogawa,S. Zaima, 2006/10
  • Buffer layer technology with misfit dislocation engineering, A. Sakai,O. Nakatsuka,M. Ogawa,S. Zaima, 2006/10
  • Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes, IKENO Daisuke,FURUMAI Kouhei,KONDO Hiroki,SAKASHITA Mitsuo,SAKAI Akira,OGAWA Masaki,ZAIMA Shigeaki, Vol. 2006, p. 442-443, 2006/09/13
  • Behavior of Local Charge Trapping Sites in La_2O_3-Al_2O_3 Composite Films under Constant Voltage Stress, SAGO Toshifumi,SEKO Akiyoshi,SAKASHITA Mitsuo,SAKAI Akira,OGAWA Masaki,ZAIMA Shigeaki, Vol. 2006, p. 418-419, 2006/09/13
  • Dislocations and related strain in group IV semiconductor heterostructures - Practical control for Si-based electronic devices, A. Sakai,S. Zaima, 2006/09
  • Interfacial structure of HfON/SiN/Si gate stacks, O. Nakatsuka,M. Sakashita,H. Kondo,E. Ikenaga,M. Kobata,J.-J. Kim,H. Nohira,T. Hattori,A. Sakai,M. Ogawa,S. Zaima, The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy, 2006/09
  • Dislocation Morphology and Crystalline Mosaicity in Strain-Relaxed SiGe Buffer Layers on SOI, SAKAI Akira,TAOKA Noriyuki,NAKATSUKA Osamu,OGAWA Masaki,ZAIMA Shigeaki, IEEJ Transactions on Electronics, Information and Systems, The Institute of Electrical Engineers of Japan, Vol. 126, No. 9, p. 1083-1087, 2006/09/01
  • Silicide and related materials for ULSI applications, S. Zaima,A. Sakai,M. Ogawa, 2006/07
  • Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates, Noriyuki Taoka,Akira Sakai,Shogo Mochizuki,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 508, No. 1-2, p. 147-151, 2006/06
  • Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction, Shogo Mochizuki,Akira Sakai,Noriyuki Taoka,Osamu Nakatsuka,Shingo Takeda,Shigeru Kimura,Masaki Ogawa,Shigeaki Zaima, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 508, No. 1-2, p. 128-131, 2006/06
  • Nano-scale observation for local current leakage in high-k gate dielectrics using conductive atomic force microscopy, S. Zaima,A. Seko,T. Sago,M. Sakashita,A. Sakai,M. Ogawa, 2006/05
  • 歪緩和Si1-xGex/Si(001)界面の刃状転位ネットワーク, 2006/04
  • Systematic characterization of Ni full silicide in sub-100 nm gate regions, D. Ito,A. Sakai,O. Nakatsuka,H. Kondo,Y. Akasaka,M. Ogawa,S. Zaima, 2006/04
  • 次世代シリコンULSIに向けたIV族系半導体へテロ界面のひずみと転位の制御技術と評価, Vol. 75, p. 426-434, 2006/04
  • Characterization of local current leakage in La2O3-Al2O3 composite films by conductive atomic force microscopy, Akiyoshi Seko,Toshifumi Sago,Mitsuo Sakashita,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 45, No. 4B, p. 2954-2960, 2006/04
  • Film structures and electrical properties of Pr silicate formed by pulsed laser deposition, Keiko Ariyoshi,Mitsuo Sakashita,Akira Sakai,Masaki Ogawa,Shigeaki Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 45, No. 4B, p. 2903-2907, 2006/04
  • Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system, O. Nakatsuka,A. Suzuki,A. Sakai,M. Ogawa,S. Zaima, Materials for Advanced Metallization Conference 2006, 2006/03
  • Dislocation morphology and crystalline mosaicity in strain-relaxed SiGe buffer layers on SOI, A. Sakai,N. Taoka,O. Nakatsuka,M. Ogawa,S. Zaima, IEEJ Transactions on Electronics, Information and Systems, Vol. 126, No. 9, 2006
  • Electrical properties and bonding structures of germanium nitride/Ge(100) structures formed by radical nitridation, H. Kondo,I. Yanagi,M. Sakashita,A. Sakai,M. Ogawa,S. Zaima, ECS Transactions, Vol. 3, No. 7, p. 287-289, 2006
  • La2O3-Al2O3複合膜中の局所電流リークの起源と酸素熱処理の効果, 2006/01
  • La2O3-Al2O3複合膜における定電圧ストレス印加時の局所的な電荷捕獲とその放出過程, Vol. 106, No. 108, p. 19-24, 2006/01
  • Scanning tunneling microscopy study on the reaction of oxygen with clean Ge(001) surfaces, Akira Sakai,Yasunobu Wakazono,Osamu Nakatsuka,Shigeaki Zaima,Masaki Ogawa, ECS Transactions, Vol. 3, No. 7, p. 1197-1203, 2006
  • Ni-silicide/Si and SiGe(C) contact technology for ULSI applications, Osamu Nakatsuka,Shigeaki Zaima,Akira Sakai,Masaki Ogawa, 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006, p. 31-37, 2006
  • Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates, Shogo Mochizuki,Akira Sakai,Osamu Nakatsuka,Hiroki Kondo,Katsunori Yukawa,Koji Izunome,Takeshi Senda,Eiji Toyoda,Masaki Ogawa,Shigeaki Zaima, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, Vol. 2006, 2006
  • Growth and structure evaluation of strain-relaxed Ge<inf>1-x</inf>Sn <inf>x</inf> buffer layers on virtual Ge(001) substrates, Shotaro Takeuchi,Akira Sakai,Koji Yamamoto,Osamu Nakatsuka,Masaki Ogawa,Shigeaki Zaima, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, Vol. 2006, 2006
  • Control and characterization of strain in SiGe/Si heterostructures with engineered misfit dislocations, A. Sakai,N. Taoka,S. Mochizuki,K. Yukawa,O. Nakatsuka,S. Takeda,S. Kimura,M. Ogawa,S. Zaima, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, Vol. 2006, 2006
  • Reliability Evaluation of Thin Gate Dielectric using Conductive Atomic Force Microscopy(Failure Analysis Technique and Tools in the Nanotechnology Era), SEKO Akiyoshi,SAKASHITA Mitsuo,SAKAI Akira,ZAIMA Shigeaki, The Journal of Reliability Engineering Association of Japan, Reliability Engineering Association of Japan, Vol. 28, No. 3, p. 163-174, 2006
  • Initial growth process of TiN films in ultrahigh-vacuum rapid thermal chemical vapor deposition, Y Okuda,S Naito,O Nakatsuka,H Kondo,T Okuhara,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 45, No. 1A, p. 49-53, 2006/01
  • Improvement in NiSi/Si contact properties with gimplantation, O Nakatsuka,K Okubo,A Sakai,M Ogawa,Y Yasuda,S Zaima, MICROELECTRONIC ENGINEERING, ELSEVIER SCIENCE BV, Vol. 82, No. 3-4, p. 479-484, 2005/12
  • Fabrication technology of SiGe hetero-structures and their properties, Y Shiraki,A Sakai, SURFACE SCIENCE REPORTS, ELSEVIER SCIENCE BV, Vol. 59, No. 7-8, p. 153-207, 2005/11
  • Epitaxial NiSi2 layers with extremely flat interfaces in Ni/Ti/Si(001) system, A. Suzuki,K. Okubo,O. Nakatsuka,A. Sakai,M. Ogawa,S. Zaima, 2005/10
  • Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates, N Taoka,A Sakai,S Mochizuki,O Nakatsuka,M Ogawa,S Zaima,T Tezuka,N Sugiyama,S Takagi, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 44, No. 10, p. 7356-7363, 2005/10
  • Analysis of local breakdown process in stressed gate SiO2 films by conductive atomic force microscopy, A Seko,Y Watanabe,H Kondo,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 44, No. 10, p. 7582-7587, 2005/10
  • Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy, SEKO Akiyoshi,SAGO Toshifumi,SAKASHITA Mitsuo,SAKAI Akira,OGAWA Masaki,ZAIMA Shigeaki, Vol. 2005, p. 246-247, 2005/09/13
  • Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy, ZAIMA Shigeaki,SEKO Akiyoshi,WATANABE Yukihiko,SAGO Toshifumi,SAKASHITA Mitsuo,KONDO Hiroki,SAKAI Akira,OGAWA Masaki, Vol. 2005, p. 236-237, 2005/09/13
  • Film structures and electrical properties of Pr silicate formed by pulsed laser deposition, K. Ariyoshi,M. Sakashita,A. Sakai,M. Ogawa,S. Zaima, Extended Abstracts of the 2005 International Conference on Solid State Device and Materials, Vol. 45, No. 4, p. 2903-2907, 2005/09
  • Fabrication and evaluation of floating gate memories with surface-nitrided Si nanocrystals, S Naito,T Ueyama,H Kondo,M Sakashita,A Sakai,M Ogawa,S Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 44, No. 7B, p. 5687-5691, 2005/07
  • Surface structures in the initial growth of epitaxial Si1-x-yGexCy layers in SiGe and C alternate deposition, 2005/05
  • Control of solid-phase reaction and electrical properties of Ni silicide/Si contacts by Ge and C incorporation, O. Nakatsuka,K. Okubo,A. Sakai,J. Murota,Y. Yasuda,M. Ogawa,S. Zaima, 2005/05
  • Surface structures in the initial growth of epitaxial Si1-x-yGexCy layers in SiGe and C alternate deposition, S. Takeuchi,O. Nakatsuka,Y. Wakazono,A. Sakai,M. Ogawa,Y. Yasuda,S. Zaima, 2005/05
  • Hard x-ray photoelectron spectroscopy for HfON/SiN/Si system, O. Nakatsuka,R. Takahashi,M. Sakashita,E. Ikenaga,K. Kobayashi,H. Nohira,T. Hattori,A. Sakai,M. Ogawa,S. Zaima, 2005/05
  • Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction, S. Mochizuki,A. Sakai,N. Taoka,O. Nakatsuka,S. Takeda,S. Kimura,M. Ogawa,S. Zaima, 2005/05
  • Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates, N. Taoka,A. Sakai,S. Mochizuki,O. Nakatsuka,M. Ogawa,S. Zaima, 2005/05
  • Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems, A Sakai,N Taoka,O Nakatsuka,S Zaima,Y Yasuda, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 86, No. 22, p. 221916-1-221916-3, 2005/05
  • Low-temperature formation of epitaxial NiSi2 layers with solid-phase reaction in Ni/Ti/Si(001) systems, O Nakatsuka,K Okubo,Y Tsuchiya,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 44, No. 5A, p. 2945-2947, 2005/05
  • Growth of high-quality carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition for field emitters, Y Kojima,S Kishimoto,Y Ohno,A Sakai,T Mizutani, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 44, No. 4B, p. 2600-2603, 2005/04
  • Thermal stability and electrical properties of (La2O3)(1-x)(Al2O3)(x) composite films, R Fujitsuka,M Sakashita,A Sakai,M Ogawa,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 44, No. 4B, p. 2428-2432, 2005/04
  • Improvement on NiSi/Si contact properties with C-implantation, S. Zaima,O. Nakatsuka,K. Okubo,A. Sakai,M. Ogawa,Y. Yasuda, Materials for Advanced Metallization Conference 2005, 2005/03
  • Initial growth behaviors of SiGeC in SiGe and C alternate deposition, S Takeuchi,O Nakatsuka,Y Wakazono,A Sakai,S Zaima,Y Yasuda, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCI LTD, Vol. 8, No. 1-3, p. 5-9, 2005/02
  • Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations, N Taoka,A Sakai,T Egawa,O Nakatsuka,S Zaima,Y Yasuda, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCI LTD, Vol. 8, No. 1-3, p. 131-135, 2005/02
  • Initial growth behaviors of SiGeC in SiGe and C alternate deposition, S Takeuchi,O Nakatsuka,Y Wakazono,A Sakai,S Zaima,Y Yasuda, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCI LTD, Vol. 8, No. 1-3, p. 5-9, 2005/02
  • Si1-xGexバッファ層の歪緩和および転位構造制御, 2005/01
  • Transmission electron microscopy analysis of dislocation structures in the strain-relaxed SiGe films on Si and silicon-on-insulator substrates, N. Taoka,A. Sakai,S. Mochizuki,O. Nakatsuka,M. Ogawa,S. Zaima,Y. Yasuda, 2005/01
  • Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals, Naito Shinya,Ueyama Tomonori,Kondo Hiroki,Sakashita Mitsuo,Sakai Akira,Ogawa Masaki,Zaima Shigeaki, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 44, No. 7, p. 5687-5691, 2005
  • Impact of C implantation on electrical properties of NiSi/Si contact, O Nakatsuka,K Okubo,A Sakai,M Ogawa,S Zaima, Fifth International Workshop on Junction Technology, JAPAN SOCIETY APPLIED PHYSICS, p. 91-92, 2005
  • 電流検出型原子間力顕微鏡を用いたLa2O3-Al2O3 複合膜の局所リーク電流評価, 2005/01
  • Epitaxial growth of (001)ZrN thin films on (001)Si by low temperature process, H Yanagisawa,S Shinkai,K Sasaki,Y Abe,A Sakai,S Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 44, No. 1A, p. 343-349, 2005/01
  • Dislocation and strain engineering for SiGe buffer layers on Si, Akira Sakai,Shogo Mochizuki,Noriyuki Taoka,Osamu Nakatsuka,Shingo Takeda,Shigeru Kimura,Masaki Ogawa,Shigeaki Zaima, Proceedings - Electrochemical Society, Vol. PV 2005-10, p. 16-29, 2005
  • Analysis of stressed-gate SiO2 films with electron injection by conductive atomic force microscopy, A Seko,Y Watanabe,H Kondo,A Sakai,S Zaima,Y Yasuda, ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, SCRIPTA TECHNICA-JOHN WILEY & SONS, Vol. 88, No. 6, p. 18-26, 2005
  • Synthesis of carbon nanotube peapods directly on Si substrates, Y Ohno,Y Kurokawa,S Kishimoto,T Mizutani,T Shimada,M Ishida,T Okazaki,H Shinohara,Y Murakami,S Maruyama,A Sakai,K Hiraga, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 86, No. 2, p. 023109-1-023109-3, 2005/01
  • Control of Ni/Si interfacial reaction and NiSi technology for ULSI applications, S. Zaima,O. Nakatsuka,A. Sakai,Y. Yasuda, 2004/12
  • Dislocation and strain distribution analysis for SiGe buffer layers formed on silicon on insulator substrates, N. Taoka,A. Sakai,S. Mochizuki,O. Nakatsuka,S. Zaima,Y. Yasuda,M. Ogawa,T. Tezuka,N. Sugiyama,S. Takagi, 2004/11
  • Dislocation Engineering for high-quality SiGe epitaxial films on Si substrates, A. Sakai,S. Zaima,Y. Yasuda, 2004/11
  • HfO2 film formation combined with radical nitridation and its electrical characteristic, R Takahashi,M Sakashita,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 43, No. 11B, p. 7821-7825, 2004/11
  • Praseodymium silicate formed by postdeposition high-temperature annealing, A Sakai,S Sakashita,M Sakashita,Y Yasuda,S Zaima,S Miyazaki, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 85, No. 22, p. 5322-5324, 2004/11
  • Scanning tunneling microscopy observation of C adsorption behavior in the initial growth of SiGeC on Si(100), 2004/10
  • Evolution of surface morphology in the initial growth of Si1-x-yGexCy layers, 2004/10
  • Evolution of surface morphology in the initial growth of Si1-x-yGexCy layers, S. Takeuchi,O. Nakatsuka,Y. Wakazono,A. Sakai,M. Ogawa,S. Zaima,Y. Yasuda, Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2004/10
  • Improvement in the Ni silicide/Si contact properties by C implantation, K. Okubo,O. Nakatsuka,A. Sakai,M. Ogawa,S. Zaima,J. Murota,Y. Yasuda, Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2004/10
  • Analysis of microstructures in strain-relaxed SiGe buffer layers on SOI substrates with pure-edge dislocation networks, N. Taoka,A. Sakai,S. Mochizuki,O. Nakatsuka,S. Zaima,M. Ogawa,Y. Yasuda,T. Tezuka,N. Sugiyama,S. Takagi, Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2004/10
  • Anisotropic strain-relaxation mechanism in SiGe/Si(001) heterostructures with 60° misfit dislocations, S. Mochizuki,T. Egawa,A. Sakai,N. Taoka,O. Nakatsuka,M. Ogawa,S. Zaima,Y. Yasuda, Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2004/10
  • Scanning tunneling microscopy observation of C adsorption behavior in the initial growth of SiGeC on Si(001), Y. Wakazono,S. Takeuchi,O. Nakatsuka,A. Sakai,S. Zaima,M. Ogawa,Y. Yasuda, Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2004/10
  • Control of initial growth of epitaxial NiSi2 on Si(001) with C incorporation, O. Nakatsuka,E. Okada,D. Ito,A. Sakai,S. Zaima,M. Ogawa,Y. Yasuda, Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2004/10
  • Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100), E Okada,O Nakatsuka,S Oida,A Sakai,S Zaima,Y Yasuda, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 237, No. 1-4, p. 150-155, 2004/10
  • Growth and dislocation control of strain-relaxed SiGe buffer layers on Si(001) substrates, Y. Yasuda,A. Sakai,S. Zaima, 2004/09
  • Nickel silicide technology for low resistivity contacts in ULSI devices, S. Zaima,O. Nakatsuka,A. Sakai,Y. Yasuda, 2004/09
  • Fabrication of peapod FETs using peapods synthesized directly on Si substrate, Y. Kurokawa,Y. Ohno,T. Shimada,Y. Murakami,A. Sakai,M. Ishida,S. Kishimoto,T. Okazaki,S. Maruyama,H. Shinohara,T. Mizutani, Extended Abstracts of the 2004 International Conference on Solid State Device and Materials, 2004/09
  • Thermal stability and electrical properties of (La2O3)1-x(Al2O3) composite films, R. Fujitsuka,M. Sakashita,A. Sakai,S. Zaima,Y. Yasuda, Extended Abstracts of the 2004 International Conference on Solid State Device and Materials, 2004/09
  • Synthesis of peapods directly on substrates, Y. Ohno,Y. Kurokawa,T. Shimada,Y. Murakami,A. Sakai,K. Hiraga,M. Ishida,T. Okazaki,S. Kishimoto,S. Maruyama,H. Shinohara,T. Mizutani, 2004/07
  • Detection and characterization of stress-induced defects in gate SiO2 films by conductive atomic force microscopy, Y Watanabe,A Seko,H Kondo,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 43, No. 7B, p. 4679-4682, 2004/07
  • Behavior of local current leakage in stressed gate SiO2 films analyzed by conductive atomic force microscopy, A Seko,Y Watanabe,H Kondo,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 43, No. 7B, p. 4683-4686, 2004/07
  • Nanoscale analysis of degradation phenomena in MOS gate insulators using conductive atomic force microscopy, S. Zaima,H. Kondo,M. Sakashita,A. Sakai,Y. Yasuda, 2004/06
  • Growth of silicon nanocrystal dots with high number density by ultra-high-vacuum chemical vapor deposition, S Naito,M Satake,H Kondo,M Sakashita,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 43, No. 6B, p. 3779-3783, 2004/06
  • Initial growth behaviors of SiGeC in SiGe and C alternate depostion, 2004/05
  • Growth process and energy bandgap formation of silicon nitride films in radical nitridation process, H. Kondo,K. Kawaai,A. Sakai,K. Miyazaki,S. Zaima,Y. Yasuda, 2004/05
  • Thickness dependence of microscopic current-voltage characteristics in stressed SiO2 films, Y. Watanabe,A. Seko,H. Kondo,A. Sakai,S. Zaima,Y. Yasuda, 2004/05
  • Growth process and energy bandgap formation of silicon nitride films in radical nitridation process, H. Kondo,K. Kawaai,A. Sakai,K. Miyazaki,S. Zaima,Y. Yasuda, 2004/05
  • Analysis of breakdown phenomena in stressed gate SiO2 films by conductive atomic force microscopy, A. Seko,Y. Watanabe,H. Kondo,A. Sakai,S. Zaima,Y. Yasuda, 2004/05
  • Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations, N. Taoka,A. Sakai,T. Egawa,O. Nakatsuka,S. Zaima,Y. Yasuda, Vol. 8, No. 1, p. 131-135, 2004/05
  • Initial growth behaviors of SiGeC in SiGe and C alternative deposition, S. Takeuchi,O. Nakatsuka,Y. Wakazono,A. Sakai,S. Zaima,Y. Yasuda, 2004/05
  • The initial growth of Si1-x-yGexCy thin films with large fractions of C atoms on Si(100), S. Zaima,A. Sakai,Y. Yasuda, 2004/05
  • Growth of strain-relaxed SiGe buffer layers on Si(001) substrates with controlled generation and propagation of dislocations, A. Sakai,S. Zaima,Y. Yasuda, 2004/04
  • Influence of structural variation of Ni silicide thin films on electrical property for contact materials, K Okubo,Y Tsuchiya,O Nakatsuka,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 43, No. 4B, p. 1896-1900, 2004/04
  • Conductive atomic force microscopy analysis for local electrical characteristics in stressed SiO2 gate films, Y Watanabe,A Seko,H Kondo,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 43, No. 4B, p. 1843-1847, 2004/04
  • Pulsed laser deposition and analysis for structural and electrical properties of HfO2-TiO2 composite films, K Honda,A Sakai,M Sakashita,H Ikeda,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 43, No. 4A, p. 1571-1576, 2004/04
  • Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100), S Ariyoshi,S Takeuchi,O Nakatsuka,A Sakai,S Zaima,Y Yasuda, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 224, No. 1-4, p. 117-121, 2004/03
  • Dislocation structures and strain-relaxation in SiGe buffer layers on Si(001) substrates with an ultra-thin Ge interlayer, T Yamamoto,A Sakai,T Egawa,N Taoka,O Nakatsuka,S Zaima,Y Yasuda, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 224, No. 1-4, p. 108-112, 2004/03
  • Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100), S Ariyoshi,S Takeuchi,O Nakatsuka,A Sakai,S Zaima,Y Yasuda, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 224, No. 1-4, p. 117-121, 2004/03
  • Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts, S Zaima,O Nakatsuka,A Sakai,J Murota,Y Yasuda, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 224, No. 1-4, p. 215-221, 2004/03
  • Microscopic analysis of stress-induced leakage current in stressed gate SiO2 films using conductive atomic force microscopy, Y Watanabe,A Seko,H Kondo,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, JAPAN SOC APPLIED PHYSICS, Vol. 43, No. 2A, p. L144-L147, 2004/02
  • GV and C-P characterization sensitivities for fast and slow-state traps in very thin oxide mosfets, JY Rosaye,Y Yasuda,A Sakai,P Mialhe,JP Charles,Y Watanabe, 2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, IEEE, p. 353-356, 2004
  • Si及びSi1-x-yGexCy上のNiシリサイド形成, Vol. EFM-04, No. 41-48, 2004
  • Thermal stability and electrical properties of Ni-silicide on C-incorporated Si, O Nakatsuka,K Okubo,A Sakai,M Ogawa,S Zaima,J Murota,Y Yasuda, ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), MATERIALS RESEARCH SOCIETY, p. 293-298, 2004
  • Preparation and evaluation of NiGe gate electrodes for metal-oxide- semiconductor devices, Yukihiro Kaneko,Hiroki Kondo,Akira Sakai,Shigeaki Zaima,Yukio Yasuda, Proceedings - Electrochemical Society, Vol. 7, p. 1107-1111, 2004
  • Group IV semiconductor materials engineering for advanced device technology, Yukio Yasuda,Akira Sakai,Osamu Nakatsuka,Shigeaki Zaima, Proceedings - Electrochemical Society, Vol. 7, p. 555-568, 2004
  • HfO2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic, Takahashi Ryoya,Sakashita Mitsuo,Sakai Akira,Zaima Shigeaki,Yasuda Yukio, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 43, No. 11, p. 7821-7825, 2004
  • Growth mechanism of epitaxial NiSi<inf>2</inf> layer in the Ni/Ti/Si(001) contact for atomically flat interfaces, Osamu Nakatsuka,Kazuya Okubo,Akira Sakai,Shigeaki Zaima,Yukio Yasuda, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Vol. 4, p. 143-146, 2004
  • エピタキシャル成長技術の進展を振り返って, 2004/01
  • Thermal stability and electrical properties of Ni-silicide on C-incorporated Si, O Nakatsuka,K Okubo,A Sakai,M Ogawa,S Zaima,J Murota,Y Yasuda, ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), MATERIALS RESEARCH SOCIETY, p. 293-298, 2004
  • Growth of carbon nanotubes by microwave-excited non-equilibrium atmospheric-pressure plasma, A Matsushita,M Nagai,K Yamakawa,M Hiramatsu,A Sakai,M Hori,T Goto,S Zaima, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 43, No. 1, p. 424-425, 2004/01
  • Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(001) substrates, T. Egawa,A. Sakai,T. Yamamoto,N. Taoka,O. Nakatsuka,S. Zaima,Y. Yasuda, Applied Surface Science, 2004/01
  • Local discharging of carriers at nanometer scale defects in gate SiO2 thin films observed by conducting atomic force microscopy, A. Seko,Y. Watanabe,H. Kondo,A. Sakai,S. Zaima,Y. Yasuda, 2003/12
  • Detection of stress-induced defects in gate SiO2 films by conducting atomic force microscopy, Y. Watanabe,A. Seko,H. Kondo,A. Sakai,S. Zaima,Y. Yasuda, 2003/12
  • Nanoscale analysis of local leakage currents in stressed gate SiO2 films by conducting atomic force microscopy, H. Kondo,A. Seko,Y. Watanabe,A. Sakai,S. Zaima,Y. Yasuda, 2003/12
  • Praseodymium silicate formation by post-growth high temperature annealing, A. Sakai,S. Sakashita,M. Sakashita,S. Zaima,Y. Yasuda,S. Miyazaki, 2003/12
  • Reactive deposition epitaxy of CoSi2 films on clean and oxygen-adsorbed Si(001) surfaces, Y Hayashi,A Sakai,H Ikeda,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 42, No. 12, p. 7482-7488, 2003/12
  • Influence of C incorporation in the initial growth of epitaxial NiSi2 on Si(100), E. Okada,S. Oida,O. Nakatsuka,A. Sakai,S. Zaima,Y. Yasuda, Program and Abstracts of The 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, 2003/11
  • Low temperature formation of epitaxial NiSi2 in Ni/Ti/Si(100) system, O. Nakatsuka,K. Okubo,Y. Tsuchiya,A. Sakai,S. Zaima,Y. Yasuda, Advanced Metallization Conference 2003: Asian Session, 2003/10
  • Chemical structures of HfO2/Si interfacial transition layer, H. Nohira,Y. Tanaka,K. Kobayashi,M. B. Seman,S. Joumori,K. Nakajima,M. Suzuki,K. Kimura,Y. Sugita,O. Nakatsuka,A. Sakai,S. Zaima,T. Ishikawa,S. Shin,T. Hattori, Extended Abstracts of the 2003 International Conference on Solid State Device and Materials, 2003/09
  • Influence of structural variation of Ni silicide thin films on electrical property for contact materials, K. Okubo,Y. Tsuchiya,O. Nakatsuka,A. Sakai,S. Zaima,Y. Yasuda, Extended Abstracts of the 2003 International Conference on Solid State Device and Materials, Vol. 43, No. 4, p. 1896-1900, 2003/09
  • Conductive atomic force microscopy analysis for local electrical characteristics in stressed SiO2 gate films, Y. Watanabe,A. Seko,H. Kondo,A. Sakai,S. Zaima,Y. Yasuda, Extended Abstracts of the 2003 International Conference on Solid State Device and Materials, Vol. 43, No. 4, p. 1843-1847, 2003/09
  • High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems, K Kobayashi,M Yabashi,Y Takata,T Tokushima,S Shin,K Tamasaku,D Miwa,T Ishikawa,H Nohira,T Hattori,Y Sugita,O Nakatsuka,A Sakai,S Zaima, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 83, No. 5, p. 1005-1007, 2003/08
  • Analysis of Stressed-Gate SiO_2 Films with Electron Injection by Conducting Atomic Force Microscopy : Microscopic observation for Degradation Mechanism of Gate SiO_2 Films, SEKO Akiyoshi,WATANABE Yukihiko,KONDO Hiroki,SAKAI Akira,ZAIMA Shigeaki,YASUDA Yukio, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 103, No. 148, p. 1-6, 2003/06/26
  • Effect of Al interlayers on two-step epitaxial growth of CoSi2 on Si(100), O Nakatsuka,H Onoda,E Okada,H Ikeda,A Sakai,S Zaima,Y Yasuda, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 216, No. 1-4, p. 174-180, 2003/06
  • Solid phase growth of nickel silicide for low resistance contacts in Si and SiGe(C) devices, S. Zaima,Y. Tsuchiya,K. Okubo,O. Nakatsuka,A. Sakai,J. Murota,Y. Yasuda, 3rd International SiGe(C) Epitaxy and Heterostructures Conference, 2003/05
  • Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen, R Takahashi,Y Kobayashi,H Ikeda,M Sakashita,O Nakatsuka,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 42, No. 4B, p. 1966-1970, 2003/04
  • Novel nonvolatile random-access memory with Si nanocrystals for ultralow-power scheme, A Shibata,H Kotaki,T Ogura,N Arai,K Adachi,A Kito,S Kakimoto,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 42, No. 4B, p. 2387-2390, 2003/04
  • Influence of additional metals on Ni/Si interfacial reactions and resultant nano-structures studied by HRTEM, EELS and EDX, Sugie Tsukasa,Yamasaki Jun,Tanaka Nobuo,Nakatsuka Osamu,Ohkubo Kazuya,Sakai Akira,Zaima Shigeaki,Yasuda Yukio, Meeting Abstracts of the Physical Society of Japan, The Physical Society of Japan, Vol. 58, No. 0, p. 874-874, 2003
  • Growth of silicon nanocrystals with high number density for floating dot memory, S. Naito,M. Satake,H. Kondo,M. Sakashita,A. Sakai,S. Zaima,Y. Yasuda, Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003, p. 20-21, 2003
  • HRTEM and EELS analysis of interfacial reactions in Ti/Si <inf>1-x</inf>Ge<inf>x</inf>/Si(100), J. Yamasaki,N. Tanaka,O. Nakatsuka,A. Sakai,S. Zaima,Y. Yasuda, Microscopy and Microanalysis, Vol. 9, No. SUPPL. 2, p. 470-471, 2003
  • Influence of Si1-xGex interlayers on the initial growth of SiGeC on Si(100), 2003/01
  • Influence of SiGe interlayer on the initial growth of Si1-x-yGexCy on Si(100), S. Ariyoshi,S. Takeuchi,O. Nakatsuka,A. Sakai,S. Zaima,Y. Yasuda, First International SiGe Technology and Device Meeting, 2003/01
  • Dislocation structures and strain-relaxation in SiGe buffer layers on Si (001) with thin Ge interlayer, T. Yamamoto,T. Egawa,N. Taoka,O. Nakatsuka,A. Sakai,S. Zaima,Y. Yasuda, First International SiGe Technology and Device Meeting, 2003/01
  • Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(001), T. Egawa,T. Yamamoto,N. Taoka,O. Nakatsuka,A. Sakai,S. Zaima,Y. Yasuda, First International SiGe Technology and Device Meeting, 2003/01
  • Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe contacts, S. Zaima,O. Nakatsuka,A. Sakai,J. Murota,Y. Yasuda, First International SiGe Technology and Device Meeting, 2003/01
  • Non-stoichiometric phase and superlattice in InSb as observed by in situ heating inside an electron microscope, A. Sakai,T. Kamino,H. Saka,T. Imura, 2003/01
  • Atomistic characterization of radical nitridation process on Si(100) surfaces, Y. Yasuda,A. Sakai,S. Zaima, Proceedings of the International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films VII, Electrochemical Society Proceedings, 2003/01
  • Surface and interface smoothing and growth mechanism of epitaxial CoSi2 films by solid-phase epitaxy using adsorbed oxygen layers and the applied two-step growth on Si(001) surfaces, Y. Hayashi,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Japanese Journal of Applied Physics, 2003/01
  • Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals, S Naito,M Okada,O Nakatsuka,T Okuhara,A Sakai,S Zaima,Y Yasuda, RAPID THERMAL PROCESSING FOR FUTURE SEMICONDUCTOR DEVICES, ELSEVIER SCIENCE BV, p. 29-35, 2003
  • Control in the initial growth stage of heteroepitaxial Si1-x-yGexCy on Si(001) substrates, S. Zaima,A. Sakai,Y. Yasuda, Applied Surface Science, 2003/01
  • Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme, Shibata Akihide,Yasuda Yukio,Kotaki Hiroshi,Ogura Takayuki,Arai Nobutoshi,Adachi Kouichiro,Kito Atsunori,Kakimoto Seizo,Sakai Akira,Zaima Shigeaki, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 42, No. 4, p. 2387-2390, 2003
  • Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen, Takahashi Ryoya,Kobayashi Yasushi,Ikeda Hiroya,Sakashita Mitsuo,Nakatsuka Osamu,Sakai Akira,Zaima Shigeaki,Yasuda Yukio, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 42, No. 4, p. 1966-1970, 2003
  • Local Leakage Current of HfO2 Thin Films Characterized by Conducting Atomic Force Microscopy, Ikeda Hiroya,Goto Tomokazu,Sakashita Mitsuo,Sakai Akira,Zaima Shigeaki,Yasuda Yukio, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 42, No. 4, p. 1949-1953, 2003
  • Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals, S Naito,M Okada,O Nakatsuka,T Okuhara,A Sakai,S Zaima,Y Yasuda, RAPID THERMAL PROCESSING FOR FUTURE SEMICONDUCTOR DEVICES, ELSEVIER SCIENCE BV, p. 29-35, 2003
  • Low resistance contact with NiSi for sub-0.1 um Si ULSI devices, O. Nakatsuka,Y. Tsuchiya,A. Sakai,S. Zaima,Y. Yasuda, 2002/10
  • Epitaxial growth of CoSi2 films on oxygen-adsorbed Si(100) surfaces, Y. Hayashi,A. Sakai,O. Nakatsuka,S. Zaima,Y. Yasuda, Fourth International Symposium on Control of Semiconductor Interfaces, 2002/10
  • Effect of Al interlayer on two-Step growth of CoSi2 on Si(100), E. Okada,H. Onoda,O. Nakatsuka,H. Ikeda,M. Sakashita,A. Sakai,S. Zaima,Y. Yasuda, Fourth International Symposium on Control of Semiconductor Interfaces, Karuizawa, 2002/10
  • Initial growth process of TiN films in ultra-high vacuum rapid thermal chemical vapor deposition, Y. Okuda,S. Naito,O. Nakatsuka,T. Okuhara,A. Sakai,S. Zaima,Y. Yasuda, Advanced Metallization Conference 2002: 12th Asian Session, 2002/10
  • Structural and electrical properties of HfO2-TiO2 composite films formed by pulsed laser deposition, K. Honda,S. Goto,M. Sakashita,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Extended Abstracts of the 2002 International Conference on Solid State Device and Materials, 2002/09
  • Influence of Ge and C for reaction in Ni/p+-Si1-x-yGexCy/Si(100) contacts, Y. Tsuchiya,O. Nakatsuka,A. Sakai,S. Zaima,J. Murota,Y. Yasuda, Extended Abstracts of the 2002 International Conference on Solid State Device and Materials, 2002/09
  • Control in the initial growth of heteroepitaxial Si1-x-yGexCy on Si(100) substrates, S. Zaima,A. Sakai,Y. Yasuda, 2002/07
  • 190. Surface smoothing of strain-relaxed SiGe layers on Si substrates in two-step strain relaxation procedure, T. Egawa,T. Yamamoto,O. Nakatsuka,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2002/06
  • Control of residual strain in SiGe buffer layers on Si substrates with ultra-thin Ge interlayers, T. Yamamoto,T. Egawa,O. Nakatsuka,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2002/06
  • Effect of Ge on solid phase epitaxy of CoSi2 on Si(100), O. Nakatsuka,H. Onoda,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2002/06
  • Structural and electrical properties in Ni/Si(100) contacts, Y. Tsuchiya,O. Nakatsuka,A. Sakai,S. Zaima,Y. Yasuda, Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2002/06
  • Formation mechanism of low resistance contact in NiSi/Si system Ni/Si, O. Nakatsuka,Y. Tsuchiya,A. Sakai,S. Zaima,Y. Yasuda, Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2002/06
  • Novel growth method of thin strain-relaxed SiGe films on Si substrates, A. Sakai,K. Sugimoto,T. Yamamoto,M. Okada,H. Ikeda,O. Nakatsuka,S. Zaima,Y. Yasuda, Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, 2002/06
  • Characterization of defect traps in SiO2 thin films influence of temperature on defects, JY Rosaye,N Kurumado,M Sakashita,H Ikeda,A Sakai,P Mialhe,JP Charles,S Zaima,Y Yasuda,Y Watanabe, MICROELECTRONICS JOURNAL, ELSEVIER SCI LTD, Vol. 33, No. 5-6, p. 429-436, 2002/05
  • Electrical properties and solid-phase reactions in Ni/Si(100) contacts, Y Tsuchiya,A Tobioka,O Nakatsuka,H Ikeda,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 41, No. 4B, p. 2450-2454, 2002/04
  • Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen, H Ikeda,D Matsushita,S Naito,K Ohmori,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 41, No. 4B, p. 2463-2467, 2002/04
  • Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition, H Ikeda,S Goto,K Honda,M Sakashita,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 41, No. 4B, p. 2476-2479, 2002/04
  • Study on solid-phase reactions in Ti/p(+)-Si1-x-yGexCy/Si(100) contacts, A Tobioka,Y Tsuchiya,H Ikeda,A Sakai,S Zaima,J Murota,Y Yasuda, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, ELSEVIER SCIENCE SA, Vol. 89, No. 1-3, p. 373-377, 2002/02
  • Improvement in morphology of nickel silicide film with carbon, O. Nakatsuka,Y. Tsuchiya,A. Sakai,S. Zaima,J. Murota,Y. Yasuda, Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002, p. 71-72, 2002
  • Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen., Ikeda Hiroya,Matsushita Daisuke,Naito Shinya,Ohmori Kenji,Sakai Akira,Zaima Shigeaki,Yasuda Yukio, Japanese Journal of Applied Physics, The Japan Society of Applied Physics, Vol. 41, No. 4, p. 2463-2467, 2002
  • Growth of SiGe layers with low threading dislocation density on Si(001) substrates using a two-step strain relaxation procedure, A. Sakai,S. Zaima,Y. Yasuda, Proceedings of the Sixth China-Japan Symposium on Thin Films, 2001/11
  • Atomistic observation of SiGeC thin film growth on Si(001) surfaces, Y. Yasuda,S. Zaima,A. Sakai, Proceedings of the Sixth China-Japan Symposium on Thin Films, 2001/11
  • Effect of rapid thermal annealing on structural and electrical properties of HfO2 films formed by pulsed laser deposition, K. Honda,S. Goto,M. Sakashita,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices, 2001/11
  • Local electrical characteristics of ultra-thin SiO2 films formed on Si(001) surfaces, H Ikeda,N Kurumado,K Ohmori,M Sakashita,A Sakai,S Zaima,Y Yasuda, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 493, No. 1-3, p. 653-658, 2001/11
  • Atomistic evolution of Si1-x-yGexCy thin films on Si(001) surfaces, A Sakai,Y Torige,M Okada,H Ikeda,Y Yasuda,S Zaima, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 79, No. 20, p. 3242-3244, 2001/11
  • Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain-relaxation procedure, A Sakai,K Sugimoto,T Yamamoto,M Okada,H Ikeda,Y Yasuda,S Zaima, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 79, No. 21, p. 3398-3400, 2001/11
  • Dislocations and microstructure evolution in semiconductor thin films, A. Sakai, International Conference on Solid Surfaces, San Francisco, 2001/10
  • Structural relaxation at SiO2/Si(100) interfaces studied by coaxial impact collision ion scattering spectroscopy, H. Ikeda,M. Wasekura,A. Sakai,S. Zaima,Y. Yasuda, Abstracts of IUVSTA 15th International Vacuum Congress, AVS 48th International Symposium, 11th International Conference on Solid Surfaces, San Francisco, 2001/10
  • Formation of TiN films by ultra-high vacuum rapid thermal chemical vapor deposition, S. Naito,M. Okada,O. Nakatsuka,T. Okuhara,A. Sakai,S. Zaima,Y. Yasuda, 2001/10
  • Study on solid phase Reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts, A. Tobioka,Y. Tsuchiya,O. Nakatsuka,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Advanced Metallization Conference 2001: Asian Session, 2001/10
  • Electrical properties and solid-phase reactions in Ni/Si(100) contacts, Y. Tsuchiya,A. Tobioka,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Extended Abstracts of the 2001 International conference on Solid State Devices and Materials, Vol. 41, No. 4, p. 2450-2454, 2001/09
  • Structural and electronic properties of metal-silicide/silicon interfaces: A first-principles study, BD Yu,Y Miyamoto,O Sugino,A Sakai,T Sasaki,T Ohno, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, Vol. 19, No. 4, p. 1180-1185, 2001/07
  • Formation of strain-relaxed SiGe films on Si substrates with cap layers, K. Sugimoto,T. Yamamoto,M. Okada,H. Ikeda,A. Sakai,Y. Yasuda,S. Zaima, European Materials Research Society 2001 Spring Meeting E-MRS 2001 (Second International Conference on Silicon Epitaxy and Heterostructures, 2001/06
  • Study on solid-phase reaction in Ti/p+-Si1-x-yGexCy/Si(100) contacts, A. Tobioka,Y. Tsuchiya,H. Ikeda,A. Sakai,Y. Yasuda,S. Zaima,J. Murota, European Materials Research Society 2001 Spring Meeting E-MRS 2001 (Second International Conference on Silicon Epitaxy and Heterostructures, 2001/06
  • STM study of the initial growth process of SiGeC films on Si(100) surfaces, Y .Torige,M. Okada,H. Ikeda,A. Sakai,Y. Yasuda,S. Zaima, European Materials Research Society 2001 Spring Meeting E-MRS 2001 (Second International Conference on Silicon Epitaxy and Heterostructures, 2001/06
  • Microscopic observation of X-ray irradiation damage in ultra-thin SiO2 films, K Ohmori,T Goto,H Ikeda,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 40, No. 4B, p. 2823-2826, 2001/04
  • Atomic-scale characterization of nitridation processes on Si(100)-2 x 1 surfaces by radical nitrogen, D Matsushita,H Ikeda,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 40, No. 4B, p. 2827-2829, 2001/04
  • Local electrical properties of HfO<inf>2</inf> thin films measured by conducting atomic force microscopy, T. Goto,S. Sakashita,H. Ikeda,M. Sakashita,A. Sakai,S. Zaima,Y. Yasuda, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001, p. 180-183, 2001
  • Electrical properties of Ni silicide/silicon contact, Yoshinori Tsuchiya,Osamu Nakatsuka,Hiroya Ikeda,Akira Sakai,Shigeaki Zaima,Yukio Yasuda, Advanced Metallization Conference (AMC), p. 679-684, 2001
  • Epitaxial lateral overgrowth of GaN, A Usui,A Sakai, ADVANCES IN CRYSTAL GROWTH RESEARCH, ELSEVIER SCIENCE BV, p. 191-209, 2001
  • Electrical properties of Ni silicide/silicon contact, Y Tsuchiya,O Nakatsuka,H Ikeda,A Sakai,S Zaima,Y Yasuda, ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001), MATERIALS RESEARCH SOC, p. 679-684, 2001
  • 選択横方向エピタキシャル成長により形成したGaN膜中の転位構造, 2001/01
  • Scanning tunneling microscopy study of Ge epitaxy on C-adsorbed Si(100) surfaces, Y. Torige,M. Okada,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, 2001/01
  • Solid-phase reactions of a Ti/Si1-xGex/Si(100) system, A. Tobioka,A. Yamanaka,O. Nakatsuka,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, First International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices, 2001/01
  • Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy, Y Hayashi,T Katoh,H Ikeda,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 40, No. 1, p. 269-275, 2001/01
  • パルスレーザー蒸着法による高誘電率薄膜の作製と電気的特性, Vol. 101, No. 108, p. 25-29, 2001/01
  • Electrical properties of Ni silicide/silicon contact, Y Tsuchiya,O Nakatsuka,H Ikeda,A Sakai,S Zaima,Y Yasuda, ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001), MATERIALS RESEARCH SOC, p. 679-684, 2001
  • Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy, Y Hayashi,T Katoh,H Ikeda,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 40, No. 1, p. 269-275, 2001/01
  • Real-time observation of initial oxidation on highly B-doped Si(100)-2x1 surfaces using scanning tunneling microscopy, K Ohmori,M Tsukakoshi,H Ikeda,A Sakai,S Zaima,Y Yasuda, PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, SPRINGER-VERLAG BERLIN, Vol. 87, p. 329-330, 2001
  • Characterization of defect traps in SiO<inf>2</inf> thin films, Jean Yves Rosaye,Pierre Mialhe,Jean Pierre Charles,Mitsuo Sakashita,Hiroya Ikeda,Akira Sakai,Shigeaki Zaima,Yukio Yasuda, Active and Passive Electronic Components, Vol. 24, No. 3, p. 169-175, 2001
  • Real-time observation of initial oxidation on highly B-doped Si(100)-2x1 surfaces using scanning tunneling microscopy, K Ohmori,M Tsukakoshi,H Ikeda,A Sakai,S Zaima,Y Yasuda, PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, SPRINGER-VERLAG BERLIN, Vol. 87, p. 329-330, 2001
  • Control of crystal structure and ferroelectric properties of Pb(ZrxTi1-x)O-3 films formed by pulsed laser deposition, H Fujita,S Goto,M Sakashita,H Ikeda,A Sakai,S Zaima,Y Yasuda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 39, No. 12B, p. 7035-7039, 2000/12
  • Effects of Sb and O atoms on epitaxial growth of CoSi2(100) films on Si(100) surfaces, H. Onoda,Y. Hayashi,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, 2000/11
  • Nucleation and growth of Ge on Si(111) in solid phase epitaxy, M. Okada,I. Suzumura,Y. Torige,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, 2000/11
  • Study on nitridation process of Si(100) surfaces using scanning tunneling microscopy, D. Matsushita,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, 2000/11
  • Hydrogen effects on initial oxidation processes of Si surfaces and relaxation in SiO2 local bonding structures, H. Ikeda,K. Sato,A. Sakai,S. Zaima,Y. Yasuda, 2000/11
  • Local electrical characteristics of ultra-thin SiO2 films formed on Si(100) surfaces, H. Ikeda,N. Kurumado,K. Ohmori,M. Sakashita,A. Sakai,S. Zaima,Y. Yasuda, 2000/11
  • Characterization of defect traps in SiO2 films, J. -Y. Rosaye,N. Kurumado,M. Sakashita,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, 2000/11
  • Studies on electrical characteristics and solid-phase reactions at metal/silicon interfaces for low-resistivity contacts, S. Zaima,H. Ikeda,A. Sakai,Y. Yasuda, 2000/11
  • Solid-phase reactions of a Ti/Si1-xGex/Si(100) system, A. Tobioka,A. Yamanaka,O. Nakatsuka,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, 2000/10
  • Effect of Sb atoms on epitaxial growth of CoSi2(100) films on Si(100) surfaces, H. Onoda,Y. Hayashi,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, 2000/10
  • Coulomb blockade phenomena in Si MOSFETs with nano-scale channels fabricated by focused-ion beam implantation, K. Izumikawa,M. Kado,M. Sakurai,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Final program and collected abstracts of 2000 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, 2000/09
  • Atomic scale characterization of nitridation process on Si(100)-2x1 surfaces by radical nitrogen, D. Matsushita,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials, 2000/09
  • Microscopic observation of X-ray irradiation damages in ultra-thin SiO2 films, K. Ohmori,T. Goto,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials, 2000/09
  • Nucleation and growth of Ge on Si(111) in solid phase epitaxy, Suzumura, I,M Okada,A Muto,Y Torige,H Ikeda,A Sakai,S Zaima,Y Yasuda, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 369, No. 1-2, p. 116-120, 2000/07
  • Dependence of contact resistivity on impurity concentration in Co/Si systems, Osamu Nakatsuka,Tetsuo Ashizawa,Kenri Nakai,Akihiro Tobioka,Akira Sakai,Shigeaki Zaima,Yukio Yasuda, Applied Surface Science, Elsevier Science Publishers B.V., Vol. 159, p. 149-153, 2000/06
  • Study on initial oxidation of Si(100)-2×1 surfaces by coaxial impact collision ion scattering spectroscopy, M. Wasekura,M. Higashi,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Applied Surface Science, Elsevier Science Publishers B.V., Vol. 159, p. 35-40, 2000/06
  • Dependence of contact resistivity on impurity concentration in Co/Si systems, O Nakatsuka,T Ashizawa,K Nakai,A Tobioka,A Sakai,S Zaima,Y Yasuda, APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 159, p. 149-153, 2000/06
  • Orientation dependence of ferroelectric properties of Pb(Zr<inf>x</inf>Ti<inf>1-x</inf>)O<inf>3</inf> thin films on Pt/SiO<inf>2</inf>/Si substrates, Hirotake Fujita,Mitsunori Imade,Mitsuo Sakashita,Akira Sakai,Shigeaki Zaima,Yukio Yasuda, Applied Surface Science, Elsevier Science Publishers B.V., Vol. 159, p. 134-137, 2000/06
  • Study on initial oxidation of Si(100)-2×1 surfaces by coaxial impact collision ion scattering spectroscopy, M. Wasekura,M. Higashi,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Applied Surface Science, Elsevier Science Publishers B.V., Vol. 159, p. 35-40, 2000/06
  • Control of crystalline structure and ferroelectric properties of Pb(ZrxTi1-x)O-3 films by pulsed laser deposition, H Fujita,S Goto,S Agata,M Sakashita,A Sakai,S Zaima,Y Yasuda, MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS, BUSINESS CENTER ACADEMIC SOC JAPAN, p. 276-277, 2000
  • The origin and the creation mechanism of positive charges in silicon oxide films, K Ohmori,H Ikeda,A Sakai,S Zaima,Y Yasuda, PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, ELECTROCHEMICAL SOC INC, Vol. 2000, No. 2, p. 345-352, 2000
  • Control of crystalline structure and ferroelectric properties of Pb(ZrxTi1-x)O-3 films by pulsed laser deposition, H Fujita,S Goto,S Agata,M Sakashita,A Sakai,S Zaima,Y Yasuda, MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS, BUSINESS CENTER ACADEMIC SOC JAPAN, p. 276-277, 2000
  • The origin and the creation mechanism of positive charges in silicon oxide films, K Ohmori,H Ikeda,A Sakai,S Zaima,Y Yasuda, PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, ELECTROCHEMICAL SOC INC, Vol. 2000, No. 2, p. 345-352, 2000
  • 集束イオンビームを用いたナノチャネルMOSFETの作製とクーロンブロッケード現象, Vol. 99, No. 617, p. 7-11, 2000/01
  • Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2x1 surfaces, D. Matsushita,H. Ikeda,A. Sakai,S. Zaima,Y. Yasuda, Thin Solid Films, 2000/01
  • Dislocation propagation in GaN films formed by epitaxial lateral overgrowth, A Sakai,H Sunakawa,A Kimura,A Usui, JOURNAL OF ELECTRON MICROSCOPY, OXFORD UNIV PRESS, Vol. 49, No. 2, p. 323-330, 2000
  • Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth, A Sakai,H Sunakawa,A Kimura,A Usui, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 76, No. 4, p. 442-444, 2000/01
  • Epitaxial lateral overgrowth of GaN and GaN based light emitting devices, A. Sakai, 1999/12
  • Nanometer-scale imaging of strain in Ge island on Si(001) surface, T Ide,A Sakai,K Shimizu, THIN SOLID FILMS, ELSEVIER SCIENCE SA, Vol. 357, No. 1, p. 22-25, 1999/12
  • Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: Design, fabrication, lasing characteristics, and spontaneous emission factor, M Fujita,A Sakai,T Baba, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, Vol. 5, No. 3, p. 673-681, 1999/05
  • GaN選択横方向成長による転位密度の低減, Vol. 68, No. 7, p. 774-779, 1999/01
  • 選択横方向成長によって形成されたGaN膜中の転位構造, Vol. 34, No. 3, p. 197-199, 1999/01
  • Nanometer-scale imaging of lattice deformation with transmission electron micrograph, T Ide,A Sakai,K Shimizu, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, JAPAN J APPLIED PHYSICS, Vol. 37, No. 12B, p. L1546-L1548, 1998/12
  • Nanometer-scale imaging of strain in Ge island on Si(001) surface, T. Ide,A. Sakai,K. Shimizu, Vol. 357, No. 2, p. 22-25, 1998/11
  • Defect morphology and structure in GaN films formed by epitaxial lateral overgrowth, A. Sakai,H. Sunakawa,A. Kimura,A. Usui, 1998/11
  • Defect structure in selectively grown GaN films with low threading dislocation density, A. Sakai,H. Sunakawa,A. Usui, Applied Physics Letters, 1998/08
  • Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth, A Sakai,H Sunakawa,A Usui, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 73, No. 4, p. 481-483, 1998/07
  • High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy, C Sasaoka,H Sunakawa,A Kimura,M Nido,A Usui,A Sakai, JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, Vol. 189, p. 61-66, 1998/06
  • Growth of strain-relaxed Ge films on Si(001) surfaces, A. Sakai,T. Tatsumi,K. Aoyama, Applied Physics Letters, 1998/06
  • ハイドライドVPE, MOVPEによるGaN ELO成長, 1998/01
  • Ge/Si系の成長と歪緩和のメカニズム, 1998/01
  • Valence band splitting of GaN assessed by peculiar strain distribution in HVPE-ELO films, AA Yamaguchi,K Kobayashi,A Sakai,Y Mochizuki,H Sunakawa,A Usui, BLUE LASER AND LIGHT EMITTING DIODES II, OHMSHA LTD, p. 692-695, 1998
  • Recent progress in epitaxial lateral overgrowth technique for growing bulk GaN by HVPE, A Usui,H Sunakawa,N Kuroda,A Kimura,A Sakai,AA Yamaguchi, BLUE LASER AND LIGHT EMITTING DIODES II, OHMSHA LTD, p. 17-21, 1998
  • Wide GaN stripes by lateral growth Zn metalorganic vapor phase epitaxy, A Kimura,C Sasaoka,A Sakai,A Usui, NITRIDE SEMICONDUCTORS, MATERIALS RESEARCH SOCIETY, Vol. 482, p. 119-124, 1998
  • Microstructure of GaN films on GaAs(1 0 0) substrates grown by hydride vapor-phase epitaxy, A Sakai,A Kimura,H Sunakawa,A Usui, JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, Vol. 183, No. 1-2, p. 49-61, 1998/01
  • Reduction of threading dislocation density in GaN films by selective epitaxial growth, A. Sakai,H. Sunakawa,A. Kimura,A. Usui, 1997/12
  • Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy, A Usui,H Sunakawa,A Sakai,AA Yamaguchi, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, JAPAN J APPLIED PHYSICS, Vol. 36, No. 7B, p. L899-L902, 1997/07
  • Growth of strain-relaxed pure Ge films on Si(001), A. Sakai,T. Tatsumi,N. Ikarashi,T. Niino, 1997/03
  • High quality InGaN MQW on low dislocation density GaN substrate grown by hydride vapor phase epitaxy, C. Sasaoka,H. Sunakawa,A. Kimura,M. Nido,A. Usui,A. Sakai, Proceedings of the Second International Conference on Nitride Semiconductors, 1997/01
  • Surface morphology study for hexagonal GaN grown on GaAs(100) substrates by hydride vapor phase epitaxy, A Kimura,AA Yamaguchi,A Sakai,H Sunakawa,M Nido,A Usui, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, JAPAN SOC APPLIED PHYSICS, Vol. 35, No. 11B, p. L1480-L1482, 1996/11
  • Single domain hexagonal GaN films on GaAs(100) vicinal substrates grown by hydride vapor phase epitaxy, AA Yamaguchi,T Manako,A Sakai,H Sunakawa,A Kimura,M Nido,A Usui, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, JAPAN J APPLIED PHYSICS, Vol. 35, No. 7B, p. L873-L875, 1996/07
  • Hexagonal GaN films grown on GaAs(100) substrates by hydride vapor phase epitaxy, AA Yamaguchi,T Manako,A Sakai,H Sunakawa,A Kimura,M Nido,A Usui, BLUE LASER AND LIGHT EMITTING DIODES, I O S PRESS, p. 206-209, 1996
  • AN ADVANCED TECHNIQUE FOR FABRICATING HEMISPHERICAL-GRAINED (HSG) SILICON STORAGE ELECTRODES, H WATANABE,T TATSUMI,T IKARASHI,A SAKAI,N AOTO,T KIKKAWA, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, Vol. 42, No. 2, p. 295-300, 1995/02
  • Role of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surface, Nobuyuki Ikarashi,Atsushi Oshiyama,Akira Sakai,Toru Tatsumi, Physical Review B, Vol. 51, No. 20, p. 14786-14789, 1995
  • 超高真空気相成長法によるシリコン低温結晶成長における水素の効果, Vol. 64, No. 11, p. 1129-1132, 1995/01
  • Ge growth on Si: islanding phenomena and layer-by-layer growth mediated by hydrogen surfactant, A. Sakai,T. Tatsumi, 1994/08
  • Ge growth on Si using atomic hydrogen as a surfactant, Akira Sakai,Toru Tatsumi, Applied Physics Letters, Vol. 64, No. 1, p. 52-54, 1994
  • DEFECT AND ISLAND FORMATION IN STRANSKI-KRASTANOV GROWTH OF GE ON SI(001), A SAKAI,T TATSUMI, MECHANISMS OF THIN FILM EVOLUTION, MATERIALS RESEARCH SOC, Vol. 317, p. 343-348, 1994
  • Ultrathin Tantalum Oxide Capacitor Process Using Oxygen-Plasma Annealing, Hiroshi Suzuki,Satoshi Kamiyama,Hirohito Watanabe,Hidekazu Kimura,Jun'ichiro Mizuki,Akira Sakai, Journal of the Electrochemical Society, Vol. 141, No. 5, p. 1246-1251, 1994
  • DEFECT-MEDIATED ISLAND FORMATION IN STRANSKI-KRASTANOV GROWTH OF GE ON SI(001), A SAKAI,T TATSUMI, PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, Vol. 71, No. 24, p. 4007-4010, 1993/12
  • Highly reliable ultra-thin Ta2O5 capacitor process technology by using O2-plasma annealing below 400C, H. Suzuki,S. Kamiyama,A. Sakai,A. Ishitani, Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, 1993/09
  • Growth kinetics of Si hemispherical grains on clean amorphous-Si surfaces, Akira Sakai,Toru Tatsumi,Koichi Ishida, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 11, No. 6, p. 2950-2953, 1993
  • Prevention of crystallization by surfactants during Si molecular-beam deposition on amorphous-Si films, Akira Sakai,Toru Tatsumi,Koichi Ishida, Physical Review B, Vol. 47, No. 11, p. 6803-6806, 1993
  • Ultra-thin TiN/Ta2O5/W capacitor technology for 1Gbit DRAM, S. Kamiyama,H. Suzuki,H. Watanabe,A. Sakai,M. Oshida,T. Tatsumi,T. Tanigawa,A. Ishitani, IEDM, Tech. Dig., 1993/01
  • Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition, Satoshi Kamiyama,Hiroshi Suzuki,Akihiko Ishitani,Akira Sakai, Journal of the Electrochemical Society, Vol. 140, No. 6, p. 1617-1625, 1993
  • Novel seeding method for the growth of polycrystalline Si films with hemispherical grains, A. Sakai,T. Tatsumi, Applied Physics Letters, 1992/04
  • ヘテロエピタキシャル成長における歪み緩和と貫通転位の低減-Si(001)基板上の高品質Si1-XGeX歪緩和層の成長-, 1992/01
  • 半球状グレインポリシリコンの形成機構, Vol. 61, No. 11, p. 1147-1151, 1992/01
  • Hemispherical grain silicon for high-density DRAMs, H. Watanabe,A. Sakai,T. Tatsumi,T. Niino, Solid State Technology, 1992/01
  • CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS WITH NATIVE-OXIDE FREE SURFACES, A SAKAI,T TATSUMI,T NIINO,H ONO,K ISHIDA, DENKI KAGAKU, ELECTROCHEMICAL SOC JAPAN, Vol. 59, No. 12, p. 1043-1049, 1991/12
  • An advanced fabrication technology of hemispherical grained (HSG) poly-Si for high capacitance storage electrodes, H. Watanabe,T. Tatsumi,T. Niino,A. Sakai,S. Adachi,N. Aoto,K. Koyama,T. Kikkawa, Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, 1991/09
  • CRYSTALLIZATION OF AMORPHOUS-SILICON WITH CLEAN SURFACES, A SAKAI,H ONO,K ISHIDA,T NIINO,T TATSUMI, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, JAPAN J APPLIED PHYSICS, Vol. 30, No. 6A, p. L941-L943, 1991/06
  • STRUCTURAL MODIFICATION OF A 7X7 SUPERSTRUCTURE BURIED AT THE AMORPHOUS SI/SI(111) INTERFACE DURING SOLID-PHASE EPITAXIAL-GROWTH, A SAKAI,T TATSUMI,HIROSAWA, I,H ONO,K ISHIDA, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 249, No. 1-3, p. L300-L306, 1991/06
  • DISLOCATION-RELATED PHOTOLUMINESCENCE IN SI1-XGEX/SI(100) GROWN BY MOLECULAR-BEAM EPITAXY, K TERASHIMA,M TAJIMA,A SAKAI,T TATSUMI, JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, Vol. 111, No. 1-4, p. 920-924, 1991/05
  • Crystallization of amorphous silicon with clean surfaces, Akira Sakai,Haruhiko Ono,Koichi Ishida,Taeko Niino,Torn Tatsumi, Japanese Journal of Applied Physics, Vol. 30, No. 6, p. L941-L943, 1991
  • High resolution transmission electron microscopy of semiconductor heterointerface, K. Ishida,A. Sakai,N. Ikarashi,H. Ono, NEC Res. Dev., Vol. 32, 1991/01
  • Crystallization of amorphous silicon with clean surfaces, Akira Sakai,Haruhiko Ono,Koichi Ishida,Taeko Niino,Torn Tatsumi, Japanese Journal of Applied Physics, Vol. 30, No. 6, p. L941-L943, 1991
  • Dislocation-related photoluminescence in Si1-xGex/Si(100) grown by molecular beam epitaxy, K. Terashima,M. Tajima,A. Sakai,T. Tatsumi, J. Cryst. Growth, Vol. 111, 1991/01
  • Structural modification of a 7x7 superstructure buried at the amorphous-Si/Si(111) interface during solid phase epitaxial growth, A. Sakai,T. Tatsumi,I. Hirosawa,H. Ono,K. Ishida, Surf. Sci. Lett., Vol. 249, 1991/01
  • HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF GAAS/ALAS HETEROINTERFACES GROWN ON THE MISORIENTED SUBSTRATE IN THE (110) PROJECTION, N IKARASHI,A SAKAI,T BABA,K ISHIDA,J MOTOHISA,H SAKAKI, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 57, No. 19, p. 1983-1985, 1990/11
  • HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF GAAS/ALAS HETEROSTRUCTURES IN THE (110) PROJECTION, N IKARASHI,A SAKAI,T BABA,K ISHIDA,J MOTOHISA,H SAKAKI, HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN MATERIALS, MATERIALS RESEARCH SOC, Vol. 183, p. 187-192, 1990
  • SI/SIOX/SI HOLE-BARRIER FABRICATION FOR BIPOLAR-TRANSISTORS USING MOLECULAR-BEAM DEPOSITION, T TATSUMI,T NIINO,A SAKAI,H HIRAYAMA,F SATO, THIN SOLID FILMS, ELSEVIER SCIENCE SA LAUSANNE, Vol. 184, No. 1-2, p. 229-235, 1990/01
  • Defect characterization and gettering effect in excimer laser gettering, Akira Sakai,Yoshio Ohshita,Akihiko Ishitani,Kazumi Takemura,Fumitoshi Toyokawa,Masao Mikami, Electronics and Communications in Japan (Part II: Electronics), Vol. 73, No. 5, p. 91-97, 1990
  • DIRECT OBSERVATION OF A 7X7 SUPERSTRUCTURE BURIED AT THE AMORPHOUS-SI/SI(111) INTERFACE, A SAKAI,T TATSUMI,K ISHIDA, ATOMIC SCALE STRUCTURE OF INTERFACES, MATERIALS RESEARCH SOC, Vol. 159, p. 315-320, 1990
  • Interface structure of Si/SiO2/Si formed by molecular beam deposition, A. Sakai,T. Tatsumi,H. Hirayama,K. Ishida, 1990/01
  • HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF GAAS/ALAS HETEROSTRUCTURES IN THE (110) PROJECTION, N IKARASHI,A SAKAI,T BABA,K ISHIDA,J MOTOHISA,H SAKAKI, HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN MATERIALS, MATERIALS RESEARCH SOC, Vol. 183, p. 187-192, 1990
  • SI/SIOX/SI HOLE-BARRIER FABRICATION FOR BIPOLAR-TRANSISTORS USING MOLECULAR-BEAM DEPOSITION, T TATSUMI,T NIINO,A SAKAI,H HIRAYAMA,F SATO, THIN SOLID FILMS, ELSEVIER SCIENCE SA LAUSANNE, Vol. 184, p. 229-235, 1990/01
  • Interface structural analysis of Si/SiO2/Si structure formed by molecular beam deposition for a hole-barrier in bipolar transistor, A. Sakai,T. Tatsumi,T. Niino,H. Hirayama,K. Ishida, Semiconductor Silicon 1990, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology, 1990/01
  • Defect characterization and gettering effect in excimer laser gettering, Akira Sakai,Yoshio Ohshita,Akihiko Ishitani,Kazumi Takemura,Fumitoshi Toyokawa,Masao Mikami, Electronics and Communications in Japan (Part II: Electronics), Vol. 73, No. 5, p. 91-97, 1990
  • Characterization of interface structures formed by Si-MBE, A. Sakai, J. Electron Microscopy, Vol. 39, 1990/01
  • DIRECT OBSERVATION OF A 7X7 SUPERSTRUCTURE BURIED AT THE AMORPHOUS-SI/SI(111) INTERFACE, A SAKAI,T TATSUMI,K ISHIDA, ATOMIC SCALE STRUCTURE OF INTERFACES, MATERIALS RESEARCH SOC, Vol. 159, p. 315-320, 1990
  • High-resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection, Nobuyuki Ikarashi,Akira Sakai,Toshio Baba,Koichi Ishida,Junich Motohisa,Hiroyuki Sakaki, Applied Physics Letters, Vol. 57, No. 19, p. 1983-1985, 1990
  • DIRECT OBSERVATION OF A 7X7 SUPERSTRUCTURE AT THE AMORPHOUS SI/SI(111) INTERFACE BY CROSS-SECTIONAL HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, A SAKAI,T TATSUMI,K ISHIDA, SURFACE SCIENCE, ELSEVIER SCIENCE BV, Vol. 224, No. 1-3, p. L956-L964, 1989/12
  • HIGH-RESOLUTION ELECTRON-MICROSCOPY OF THE GAAS/ALGAAS HETEROINTERFACE WITH (200) AND TRANSMITTED BEAMS, N IKARASHI,A SAKAI,T BABA,K ISHIDA, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 55, No. 24, p. 2509-2511, 1989/12
  • INTERFACE ATOMIC-STRUCTURE OF SI/SIO2/SI FORMED BY MOLECULAR-BEAM DEPOSITION, A SAKAI,T TATSUMI,T NIINO,H HIRAYAMA,K ISHIDA, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 55, No. 24, p. 2500-2502, 1989/12
  • エキシマレーザゲッタリングにおける欠陥の形成機構とゲッタリング効果, Vol. J72-C-II, No. 5, p. 589-594, 1989/05
  • Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition, Akira Sakai,Toru Tatsumi,Taeko Niino,Hiroyuki Hirayama,Koichi Ishida, Applied Physics Letters, Vol. 55, No. 24, p. 2500-2502, 1989
  • Si/SiOx/Si Hole-Barrier Fabrication for Bipolar Transistors Using Molecular Beam Deposition, Toru Tatsumi,Taeko Niino,Akira Sakai,Hiroyuki Hirayama, Japanese Journal of Applied Physics, Vol. 28, No. 10 A, p. L1678-L1681, 1989
  • Direct observation of a 7x7 superstructure at the amorphous-Si/Si(111) interface by cross-sectional high resolution transmission electron microscopy, A. Sakai,T. Tatsumi,K. Ishida, Surf. Sci., Vol. 224, 1989/01
  • High-resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams, Nobuyuki Ikarashi,Akira Sakai,Toshio Baba,Koichi Ishida, Applied Physics Letters, Vol. 55, No. 24, p. 2509-2511, 1989
  • Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition, Akira Sakai,Toru Tatsumi,Taeko Niino,Hiroyuki Hirayama,Koichi Ishida, Applied Physics Letters, Vol. 55, No. 24, p. 2500-2502, 1989
  • エキシマレーザゲッタリングにおける欠陥の形成機構とゲッタリング効果, Vol. J72-C-II, 1989/01
  • NATURE OF LATTICE-DEFECTS INDUCED BY EXCIMER LASER IRRADIATION FOR EXTRINSIC GETTERING, A SAKAI,H ONO,Y OHSHITA,J MATSUI, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, JAPAN J APPLIED PHYSICS, Vol. 27, No. 2, p. L155-L158, 1988/02
  • Excimer laser gettering of Si wafer, K. Takemura,F. Toyokawa,Y. Ohshita,A. Sakai,A. Ishitani,M. Mikami, NEC Research and Development, Vol. 90, 1988/01
  • Excimer laser gettering of Si wafer, K. Takemura,F. Toyokawa,Y. Ohshita,A. Sakai,A. Ishitani,M. Mikami, NEC Res. Dev., Vol. 90, 1988/01
  • Nature of lattice defects induced by excimer laser irradiation for extrinsic gettering, A. Sakai,H. Ono,Y. Ohshita,J. Matsui, Jpn. J. Appl. Phys., Vol. 27, 1988/01
  • PREPARATION OF HIGHLY PERFECT SINGLE-CRYSTALS OF FE-3 WT-PERCENT SI, H SAKA,A SAKAI,T IMURA,S NAKATANI,S KIKUTA, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, AKADEMIE VERLAG GMBH, Vol. 101, No. 1, p. 51-55, 1987/05
  • A new gettering of Si wafer by excimer laser irradiation, F. Toyokawa,K. Takemura,Y. Ohshita,A. Sakai, J. Electrochem. Soc., Vol. 134, 1987/01
  • Preparation of highly perfect single crystals of Fe3 wt%Si, H. Saka,A. Sakai,T. Imura,S. Nakatani,S. Kikuta, physica status solidi (a), Vol. 101, No. 1, p. 51-55, 1987
  • REDUCTION OF DISLOCATION DENSITY IN SI BY THERMAL CYCLIC ANNEALING, A SAKAI,H SAKA,T IMURA, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, AKADEMIE VERLAG GMBH, Vol. 97, No. 1, p. 57-63, 1986/09
  • REDUCTION OF DISLOCATION DENSITY IN SI BY THERMAL CYCLIC ANNEALING, A SAKAI,H SAKA,T IMURA, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, AKADEMIE VERLAG GMBH, Vol. 97, No. 1, p. 57-63, 1986/09
  • INSITU HREM OBSERVATION OF SOLID LIQUID INTERFACE, H SAKA,A SAKAI,T KAMINO,T IMURA, PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, TAYLOR & FRANCIS LTD, Vol. 52, No. 3, p. L29-L32, 1985
  • INSITU HREM OBSERVATION OF SOLID LIQUID INTERFACE, H SAKA,A SAKAI,T KAMINO,T IMURA, PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, TAYLOR & FRANCIS LTD, Vol. 52, No. 3, p. L29-L32, 1985

Misc.

  • ナノビームX線回折法による周期溝加工基板上AlN厚膜の結晶深さ方向構造解析, 志田和己,竹内正太郎,三宅秀人,三宅秀人,平松和政,隅谷和嗣,今井康彦,木村滋,酒井朗, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), Vol. 78th, 2017/08/25
  • CS-5-2 Evaluation and Controlling Technology of Dislocation and Strains in Si_<1-x>Ge_X/Si(001) Structures, Nakatsuka Osamu,Sakai Akira,Kondo Hiroki,Ogawa Masaki,Zaima Shigeaki, Proceedings of the Society Conference of IEICE, The Institute of Electronics, Information and Communication Engineers, Vol. 2007, No. 2, p. "S-12"-"S-13", 2007/08/29
  • Initial stage of processes and energy bandgap formation in nitridation of silicon surface using nitrogen radicals, Hiroki Kondo,Shigeaki Zaima,Akira Sakai,Masaki Ogawa, Shinku/Journal of the Vacuum Society of Japan, Vol. 50, No. 11, p. 665-671, 2007
  • Sub‐100nmゲート領域におけるNiシリサイド形成反応の観察, 伊東大介,酒井朗,中塚理,近藤博基,赤坂泰志,奈良安雄,小川正毅,財満鎮明, 応用物理学関係連合講演会講演予稿集, Vol. 53rd, No. 2, 2006/03/22
  • 極薄Ge中間層を用いた歪緩和Ge/Si(001)界面の転位構造制御, 湯川勝規,望月省吾,中塚理,酒井朗,竹田晋吾,木村滋,坂田修身,隅谷和嗣,泉妻宏治,仙田剛士,豊田英二,小川正毅,財満鎮明, 応用物理学関係連合講演会講演予稿集, Vol. 53rd, No. 1, 2006/03/22
  • Analysis of Local Leakage Current in Gate Dielectric by Conductive Atomic Force Microscopy, SEKO Akiyoshi,WATANABE Yukihiko,KONDO Hiroki,SAKAI Akira,ZAIMA Shigeaki,YASUDA Yukio, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 104, No. 135, p. 31-36, 2004/06/15
  • Analysis of Formation Mechanism of the Energy Bandgap in the Radical Nitridation Process, KONDO Hiroki,KAWAAI Keigo,MIYAZAKI Kayoko,SAKAI Akira,ZAIMA Shigeaki,YASUDA Yukio, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 104, No. 134, p. 27-32, 2004/06/14
  • HRTEM and EELS analysis of interfacial reactions in Ti/Si<SUB>1-x</SUB>Ge<SUB>x</SUB>/Si(100), p. 470-471, 2003
  • Dislocation propagation in GaN films formed by epitaxial lateral overgrowth, Akira Sakai,Haruo Sunakawa,Akitaka Kimura,Akira Usui, Journal of Electron Microscopy, Oxford University Press, Vol. 49, No. 2, p. 323-330, 2000
  • Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth, A Sakai,H Sunakawa,A Kimura,A Usui, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 76, No. 4, p. 442-444, 2000/01
  • Dislocation propagation in GaN films formed by epitaxial lateral overgrowth, Akira Sakai,Haruo Sunakawa,Akitaka Kimura,Akira Usui, Journal of Electron Microscopy, Oxford University Press, Vol. 49, No. 2, p. 323-330, 2000
  • Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth, A Sakai,H Sunakawa,A Kimura,A Usui, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 76, No. 4, p. 442-444, 2000/01
  • 選択横方向成長によって形成されたGaN膜中の転位構造, Vol. 34, No. 3, p. 197-199, 1999
  • GaN選択横方向成長による転位密度の低減, Vol. 68, No. 7, p. 774-779, 1999
  • Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth, A Sakai,H Sunakawa,A Usui, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 73, No. 4, p. 481-483, 1998/07
  • Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth, A Sakai,H Sunakawa,A Usui, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 73, No. 4, p. 481-483, 1998/07
  • Ge/Si系の成長と歪緩和のメカニズム, Vol. 25, No. 1, p. 17-28, 1998
  • Growth and strain-relaxation mechanisms of Ge on Si(001), Vol. 25, No. 1, p. 17-28, 1998
  • Growth of strain-relaxed Ge films on Si(001) surfaces, A Sakai,T Tatsumi,K Aoyama, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 71, No. 24, p. 3510-3512, 1997/12
  • Growth of strain-relaxed Ge films on Si(001) surfaces, A Sakai,T Tatsumi,K Aoyama, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 71, No. 24, p. 3510-3512, 1997/12
  • Defect structure in selectively grown GaN films with low threading dislocation density, A Sakai,H Sunakawa,A Usui, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 71, No. 16, p. 2259-2261, 1997/10
  • Defect structure in selectively grown GaN films with low threading dislocation density, A Sakai,H Sunakawa,A Usui, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 71, No. 16, p. 2259-2261, 1997/10
  • GE GROWTH ON SI USING ATOMIC-HYDROGEN AS A SURFACTANT, A SAKAI,T TATSUMI, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 64, No. 1, p. 52-54, 1994/01
  • GE GROWTH ON SI USING ATOMIC-HYDROGEN AS A SURFACTANT, A SAKAI,T TATSUMI, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 64, No. 1, p. 52-54, 1994/01
  • DEFECT-MEDIATED ISLAND FORMATION IN STRANSKI-KRASTANOV GROWTH OF GE ON SI(001), A SAKAI,T TATSUMI, PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, Vol. 71, No. 24, p. 4007-4010, 1993/12
  • GROWTH-KINETICS OF SI HEMISPHERICAL GRAINS ON CLEAN AMORPHOUS-SI SURFACES, A SAKAI,T TATSUMI,K ISHIDA, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, AMER INST PHYSICS, Vol. 11, No. 6, p. 2950-2953, 1993/11
  • GROWTH-KINETICS OF SI HEMISPHERICAL GRAINS ON CLEAN AMORPHOUS-SI SURFACES, A SAKAI,T TATSUMI,K ISHIDA, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, AMER INST PHYSICS, Vol. 11, No. 6, p. 2950-2953, 1993/11
  • Defect-mediated island formation in Stranski-Krastanov growth of Ge on Si(001), Physical Review Letters, Vol. 71, No. 24, p. 4007-4010, 1993
  • NOVEL SEEDING METHOD FOR THE GROWTH OF POLYCRYSTALLINE SI FILMS WITH HEMISPHERICAL GRAINS, A SAKAI,T TATSUMI, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 61, No. 2, p. 159-161, 1992/07
  • NOVEL SEEDING METHOD FOR THE GROWTH OF POLYCRYSTALLINE SI FILMS WITH HEMISPHERICAL GRAINS, A SAKAI,T TATSUMI, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 61, No. 2, p. 159-161, 1992/07
  • CRYSTALLIZATION OF AMORPHOUS-SILICON WITH CLEAN SURFACES, A SAKAI,H ONO,K ISHIDA,T NIINO,T TATSUMI, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, JAPAN J APPLIED PHYSICS, Vol. 30, No. 6A, p. L941-L943, 1991/06
  • CRYSTALLIZATION OF AMORPHOUS-SILICON WITH CLEAN SURFACES, A SAKAI,H ONO,K ISHIDA,T NIINO,T TATSUMI, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, JAPAN J APPLIED PHYSICS, Vol. 30, No. 6A, p. L941-L943, 1991/06

Works

  • GaN結晶膜およびGaN系半導体素子(特許), 1998 -
  • 半導体結晶の作製方法(特許), 1996 -
  • (]G0048[)誘電率膜キャパシタ(特許), 1995 -
  • アモルファスシリコン膜の形成方法(特許), 1993 -
  • 半導体装置の製造方法(特許), 1992 -

Awards

  • 第49回(平成14年度)大河内賞記念賞, 2003/03
  • 応用物理学会賞A論文賞, 1999