Artificial Synaptic Memristor Mimicking Biological Neural Functions

Sakai Akira

The journal of the Institute of Electronics, Information and Communication Engineers　Vol. 107　No. 4　p. 311-318　2024/04　Research paper (scientific journal)

Local strain distribution analysis in strained SiGe spintronics devices

Tomoki Onabe, Zhendong Wu, Tetsuya Tohei, Yusuke Hayashi, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Takahiro Naito, Kohei Hamaya, Akira Sakai

Japanese Journal of Applied Physics　Vol. 63　No. 2　2024/02/29　Research paper (scientific journal)

Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate

Toshikazu Sato, Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai

Materials Science in Semiconductor Processing　Vol. 167　2023/11/15　Research paper (scientific journal)

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

Yudai Nakanishi, Yusuke Hayashi, Takeaki Hamachi, Tetsuya Tohei, Yoshikata Nakajima, Shiyu Xiao, Kanako Shojiki, Hideto Miyake, Akira Sakai

Journal of Electronic Materials　2023/03/29　Research paper (scientific journal)

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates

Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai

Scientific Reports　Vol. 13　No. 1　2023/02/10　Research paper (scientific journal)

High-temperature operation of gallium oxide memristors up to 600 K

Kento Sato, Yusuke Hayashi, Naoki Masaoka, Tetsuya Tohei, Akira Sakai

Scientific Reports　Vol. 13　No. 1　2023/01/30　Research paper (scientific journal)

Interface engineering of amorphous gallium oxide crossbar array memristors for neuromorphic computing

Naoki Masaoka, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai

Japanese Journal of Applied Physics　Vol. 62　No. SC　p. SC1035-SC1035　2023/01/24　Research paper (scientific journal)

Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors

Taishi Ikeuchi, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai

Applied Physics Express　Vol. 16　No. 1　p. 015509-015509　2023/01/01　Research paper (scientific journal)

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai, Vladimir Protasenko, Jashan Singhal, Hideto Miyake, Huili Grace Xing, Debdeep Jena, YongJin Cho

Science Advances　Vol. 8　No. 36　2022/09/09　Research paper (scientific journal)

Versatile Functionality of Four-Terminal TiO2-x Memristive Devices as Artificial Synapses for Neuromorphic Computing

Ryotaro Miyake, Zenya Nagata, Kenta Adachi, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai

ACS APPLIED ELECTRONIC MATERIALS　Vol. 4　No. 5　p. 2326-2336　2022/05　Research paper (scientific journal)

Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction

Haruna Shiomi, Akira Ueda, Tetsuya Tohei, Yasuhiko Imai, Takeaki Hamachi, Kazushi Sumitani, Shigeru Kimura, Yuji Ando, Tamotsu Hashizume, Akira Sakai

Applied Physics Express　Vol. 14　No. 9　p. 095502-095502　2021/09/01　Research paper (scientific journal)

Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing

Yusuke Hayashi, Kenjiro Uesugi, Kanako Shojiki, Tetsuya Tohei, Akira Sakai, Hideto Miyake

AIP Advances　Vol. 11　No. 9　p. 095012-095012　2021/09/01　Research paper (scientific journal)

Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

T. Hamachi, T. Tohei, Y. Hayashi, M. Imanishi, S. Usami, Y. Mori, N. Ikarashi, A. Sakai

Journal of Applied Physics　Vol. 129　No. 22　p. 225701-225701　2021/06/14　Research paper (scientific journal)

Local piezoelectric properties in Na-flux GaN bulk single crystals

A. Ueda, T. Hamachi, A. Okazaki, S. Takeuchi, T. Tohei, M. Imanishi, M. Imade, Y. Mori, A. Sakai

Journal of Applied Physics　Vol. 128　No. 12　p. 125110-125110　2020/09/28　Research paper (scientific journal)

Fabrication of GaO x based crossbar array memristive devices and their resistive switching properties

Mamoru Joko, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai

Japanese Journal of Applied Physics　Vol. 59　No. SM　p. SMMC03-SMMC03　2020/07/01　Research paper (scientific journal)

Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices

Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Nobuyuki Ikarashi, Akira Sakai

Scientific Reports　Vol. 9　No. 1　p. 10013-1-10013-7　2019/12　Research paper (scientific journal)

Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals

Shotaro Takeuchi, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Nobuyuki Ikarashi, Akira Sakai

Scientific Reports　Vol. 9　No. 1　2019/12　Research paper (scientific journal)

Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction

Kazuki Shida, Nozomi Yamamoto, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai

Japanese Journal of Applied Physics　Vol. 58　No. SC　p. SCCB16-1-SCCB16-6　2019/06/01　Research paper (scientific journal)

Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method

Takeaki Hamachi, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Akira Sakai

Japanese Journal of Applied Physics　Vol. 58　No. SC　p. SCCB23-SCCB23　2019/06/01　Research paper (scientific journal)

Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method

Takeaki Hamachi, Tetsuya Tohei, Masayuki Imanishi, Yusuke Mori, Akira Sakai

Japanese Journal of Applied Physics　Vol. 58　No. 5　p. 050918-050918　2019/05/01　Research paper (scientific journal)

Depth-resolved analysis of lattice distortions in high-Ge-content SiGe/compositionally graded SiGe films using nanobeam x-ray diffraction

Kazuki Shida, Shotaro Takeuchi, Tetsuya Tohei, Yasuhiko Imai, Shigeru Kimura, Andreas Schulze, Matty Caymax, Akira Sakai

Semiconductor Science and Technology　Vol. 33　No. 12　p. 124005-124005　2018/12/01　Research paper (scientific journal)

Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction

K. Shida, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai

International Workshop on Nitride Semiconductors (IWN 2018)　2018/11　Research paper (international conference proceedings)

Dislocation Properties in Bulk GaN Substrates

IDGN-4　2018/11　Research paper (other academic)

Local electrical and structural analysis for threading dislocations in the modified Na-flux GaN bulk single crystals

T. Hamachi, T. Tohei, M. Imanishi, Y. Mori, A. Sakai

International Workshop on Nitride Semiconductors (IWN 2018)　2018/11　Research paper (other academic)

Defect characterization in nitride semiconductor bulk materials

Akira Sakai

International Workshop on Nitride Semiconductors (IWN 2018)　2018/11　Research paper (international conference proceedings)

Gate-Tuning of Synaptic Functions Based on The Oxygen Vacancy Distribution Control in Four-Terminal TiO2-x Memristive Devices

Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Akira Sakai

2018 International Conference on Solid State Devices and Materials (SSDM2018)　2018/09　Research paper (international conference proceedings)

Nanobeam X-ray diffraction analysis of local lattice distortions in the growth direction of a modified Na-flux GaN bulk crystal

K. Shida, S. Takeuchi, T. Tohei, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai

International Symposium on Growth of III-Nitrides (ISGN-7)　2018/08　Research paper (other academic)

Leakage current analysis for individual dislocations in the modified Na-flux GaN bulk single crystal

T. Hamachi, S. Takeuchi, T. Tohei, M. Imanishi, Y. Mori, A. Sakai

International Symposium on Growth of III-Nitrides (ISGN-7)　2018/08　Research paper (other academic)

Three-dimensional structural and defect analysis by nanobeam X-ray diffraction for semiconductor materials

Akira Sakai

THERMEC'2018　2018/07　Research paper (other academic)

Facile Synthesis Route of Au-Ag Nanostructures Soaked in PEG

E. K. Fodjo, A. Canlier, C. Kong, A. Yurtsever, P. L. A. Guillaume, F. T. Patrice, M. Abe, T. Tohei, A. Sakai

Advances in Nanoparticles　2018/07　Research paper (scientific journal)

Analysis of Ti valence states in resistive switching regions of a rutile TiO2− x four-terminal memristive device

Kengo Yamaguchi, Shotaro Takeuchi, Tetsuya Tohei, Nobuyuki Ikarashi, Akira Sakai

Japanese Journal of Applied Physics　Vol. 57　No. 6S3　p. 06KB02-06KB02　2018/06/01　Research paper (scientific journal)

Tomographic mapping analysis of lattice distortions in the depth direction of high-Ge-content SiGe films with compositionally graded buffer layers using nanobeam X-ray diffraction

K. Shida, S. Takeuchi, T. Tohei, Y. Imai, S. Kimura, A. Schulze, M. Caymax, A. Sakai

1st Joint ISTDM/ICSI 2018 Conference　2018/05　Research paper (international conference proceedings)

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

T. Hamachi, S. Takeuchi, T. Tohei, M. Imanishi, M. Imade, Y. Mori, A. Sakai

Journal of Applied Physics　Vol. 123　No. 16　p. 161417-161417　2018/04/28　Research paper (scientific journal)

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

K. Shida, S. Takeuchi, T. Tohei, H. Miyake, K. Hiramatsu, K. Sumitani, Y. Imai, S. Kimura, A. Sakai

Journal of Applied Physics　Vol. 123　No. 16　p. 161563-161563　2018/04/28　Research paper (scientific journal)

Three-dimensional analysis of defect-related singularity structures in semiconductor materials

A. Sakai, S. Takeuchi, K. Shida, S. Kamada, T. Tohei, Y. Imai, S. Kimura, H. Miyake, K. Hiramatsu

OIST-Singularity Project Joint Workshop　2018/04　Research paper (other academic)

Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates

Hideki Matsui, Takafumi Ishibe, Tsukasa Terada, Shunya Sakane, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, Shigeru Kimura, Yoshiaki Nakamura

Applied Physics Letters　Vol. 112　No. 3　p. 031601-1-031601-4　2018/01/15　Research paper (scientific journal)

Nanobeam X-ray diffraction analysis of lattice deformation in thin nano-indented single crystal Si wafers

Y. Mametsuka, S. Takeuchi, T. Tohei, K. Sumitani, Y. Imai, S. Kimura, J. Fujise, T. Ono, A. Sakai

2018/01

Leakage current analysis in GaN-on-GaN p-n diode by conductive atomic force microscopy

S. Mizutani, T. Hamachi, S. Takeuchi, T. Tohei, T. Kachi, S. Sarayama, A. Sakai

21st SANKEN International Symposium /The 16th SANKEN Nanotechonology International Symposium　2018/01　Research paper (other academic)

Resistive switching characteristics of four-terminal TiO2-x single crystal memristive devices

Takuma Shimizu, Shotaro Takeuchi, Tetsuya Tohei, Akira Sakai

2017 International Workshop on Dielectric Thin Films for Future Electron Devices Science and Technology (2017 IWDTF)　2017/11　Research paper (international conference proceedings)

Analysis of Ti valence state in resistive switching region of rutile TiO2-x four-terminal memristive device

Kengo Yamaguchi, Shotaro Takeuchi, Tetsuya Tohei, Nobuyuki Ikarashi, Akira Sakai

2017/11　Research paper (international conference proceedings)

Quantification of local strain distributions in nanoscale strained SiGe FinFET structures

Shogo Mochizuki, Conal E. Murray, Anita Madan, Teresa Pinto, Yun-Yu Wang, Juntao Li, Weihao Weng, Hemanth Jagannathan, Yasuhiko Imai, Shigeru Kimura, Shotaro Takeuchi, Akira Sakai

JOURNAL OF APPLIED PHYSICS　Vol. 122　No. 13　p. 135705-1-135705-10　2017/10　Research paper (scientific journal)

Control of dislocation morphology and lattice distortion in Na-flux GaN crystals

S. Takeuchi, Y. Mizuta, M. Imanishi, M. Imade, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai

Journal of Applied Physics　Vol. 122　No. 10　p. 105303-105303　2017/09/14　Research paper (scientific journal)

Valence state analysis of Ti in resistive switching region of rutile TiO2-x single crystals memristor

Kengo Yamaguchi, Shotaro Takeuchi, Takuma Shimizu, Tetsuya Tohei, Nobuyuki Ikarasi, Akira Sakai

2017/09　Research paper (international conference proceedings)

Epitaxial multilayers of beta-FeSi2 nanodots/Si for Si-based nanostructured electronic materials

Shunya Sakane, Masayuki Isogawa, Kentaro Watanabe, Jun Kikkawa, Shotaro Takeuchi, Akira Sakai, Yoshiaki Nakamura

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A　Vol. 35　No. 4　2017/07　Research paper (scientific journal)

Characterization of local piezoelectric property in Na flux GaN bulk single crystals

A. Ueda, S. Takeuchi, M. Imanishi, M. Imade, Y. Mori, A. Sakai

29th International Conference on Defects in Semiconductors　2017/07　Research paper (international conference proceedings)

Leakage current analysis for dislocations in Na flux GaN bulk single crystals by conductive atomic force microscopy

T. Hamachi, S. Takeuchi, M. Imanishi, M. Imade, Y. Mori, A. Sakai

29th International Conference on Defects in Semiconductors　2017/07　Research paper (international conference proceedings)

In-depth microstructural analysis of heteroepitaxial AlN thick films grown on trench-patterned templates by nanobeam X-ray diffraction

K. Shida, S. Takeuchi, H. Miyake, K. Hiramatsu, K. Sumitani, Y. Imai, S. Kimura, A. Sakai

29th International Conference on Defects in Semiconductors　2017/07　Research paper (international conference proceedings)

Control of dislocation propagation behaviors in Na flux GaN bulk crystals

S. Takeuchi, Y. Mizuta, M. Imanishi, M. Imade, Y. Mori, Y. Imai, S. Kimura, A. Sakai

The 12th International Conference on Nitride Semiconductors (ICNS-12)　2017/07　Research paper (international conference proceedings)

Nano beam X-ray diffraction analysis of Na flux GaN bulk crystals grown with controlling seed crystal surfaces and growth mode

S. Takeuchi, Y. Mizuta, M. Imanishi, M. Imade, Y. Mori, Y. Imai, S. Kimura, A. Sakai

The 12th International Conference on Nitride Semiconductors (ICNS-12)　2017/07　Research paper (international conference proceedings)

Tomographic Mapping Analysis in the Depth Direction of High-Ge-Content SiGe Layers with Compositionally Graded Buffers Using Nanobeam X-ray Diffraction

Kazuki Shida, Shotaro Takeuchi, Yasuhiko Imai, Shigeru Kimura, Andreas Schulze, Matty Caymax, Akira Sakai

ACS Applied Materials & Interfaces　Vol. 9　No. 15　p. 13726-13732　2017/04/19　Research paper (scientific journal)

Study on the influence of different trench-patterned templates on the crystalline microstructure of AIN epitaxial films by X-ray microdiffraction

Dinh Thanh Khan, Shotaro Takeuchi, Yoshiaki Nakamura, Kunihiko Nakamura, Takuji Arauchi, Hideto Miyake, Kazumasa Hiramatsu, Yasuhiko Imai, Shigeru Kimura, Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 56　No. 2　p. 025502-1-025502-5　2017/02　Research paper (scientific journal)

Structural characterization of defects in nitride semiconductor materials

A. Sakai

2017/01　Research paper (other academic)

Reversible resistive switching by the voltage-driven control of oxygen vacancy distribution in four terminal planar TiO2-x-based devices

T. Shimizu, M. Shimotani, S. Takeuchi, A. Sakai

2016/12

Nanobeam X-ray diffraction for tomographic mapping analysis of high Ge content Si1-yGey/compositionally graded Si1-xGex stacked structure

K. Shida, S. Takeuchi, Y. Imai, S. Kimura, A. Shulze, M. Caymax, A. Sakai

2016/12

Demonstration of reversible resistive switching by the control of oxygen vacancy distribution in rutile TiO2-x single crystals

T. Shimizu, M. Shimotani, S. Takeuchi, A. Sakai

2016/11　Research paper (international conference proceedings)

Nano beam X-ray diffraction analysis of microstructures in Na-flux GaN bulk crystals grown with controlling seed crystal surfaces and growth mode

Y. Mizuta, S. Takeuchi, M. Imanishi, M. Imade, Y. Imai, S. Kimura, Y. Mori, A. Sakai

2016/11　Research paper (international conference proceedings)

Tomographic mapping analysis of high Ge composition SiGe layers with compositionally graded buffers by nanobeam X-ray diffraction

K. Shida, S. Takeuchi, Y. Imai, S. Kimura, A. Shulze, M. Caymax, A. Sakai

2016/11　Research paper (international conference proceedings)

Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique

Shohei Kamada, Shotaro Takeuchi, Dinh Thanh Khan, Hideto Miyake, Kazumasa Hiramatsu, Yasuhiko Imai, Shigeru Kimura, Akira Sakai

APPLIED PHYSICS EXPRESS　Vol. 9　No. 11　p. 111001-1-111001-4　2016/11　Research paper (scientific journal)

Three-dimensional reciprocal space mapping analysis for localized structures and defects in nitride semiconductor materials

A. Sakai, S. Takeuchi

2016/10　Research paper (international conference proceedings)

Tomographic mapping analysis of high Ge content SiGe epitaxial films with compositionally graded layers by X-ray microdiffraction

K. Shida, S. Takeuchi, Y. Imai, S. Kimura, A. Sakai

2016/08　Research paper (international conference proceedings)

Interface and dislocation structures in Na flux GaN grown on MOCVD-GaN

S. Takeuchi, H. Asazu, Y. Mizuta, M. Imanishi, M. Imade, Y. Mori, A. Sakai

2016/08　Research paper (international conference proceedings)

Crystalline structure of TiC ultrathin layers formed on highly oriented pyrolytic graphite by chemical reaction from Ti/graphite system

Nakatsuka Osamu, Hisada Kenji, Oida Satoshi, Sakai Akira, Zaima Shigeaki

Japanese Journal of Applied Physics　Vol. 55　No. 6　p. 06JE02-06JE02　2016/06

Characterization of local strain in nanoscale strained SiGe FinFET structures

S. Mochizuki, C. E. Murray, A. Madan, T. Pinto, Y. Y. Wang, J. Li, W. Weng, H. Jagannathan, Y. Imai, S. Kimura, S. Takeuchi, A. Sakai

2016/06

Nanostructure driven defect control in GaN grown by the Na flux method

A. Sakai, H. Asazu, S. Takeuchi, Y. Nakamura, M.Imanishi, M. Imade, Y. Mori

2016/06　Research paper (international conference proceedings)

Epitaxial iron oxide nanocrystals with memory function grown on Si substrates

Takafumi Ishibe, Hideki Matsui, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, Yoshiaki Nakamura

APPLIED PHYSICS EXPRESS　Vol. 9　No. 5　p. 055508-1-055508-4　2016/05　Research paper (scientific journal)

Positional dependence of defect distribution in semipolar (20(2)over-bar1) hydride vapor phase epitaxy-GaN films grown on (22(4)over-bar3) patterned sapphire substrates

Toshiro Uchiyama, Shotaro Takeuchi, Shohei Kamada, Takuji Arauchi, Yasuhiro Hashimoto, Keisuke Yamane, Narihito Okada, Yasuhiko Imai, Shigeru Kimura, Kazuyuki Tadatomo, Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 55　No. 5　2016/05　Research paper (scientific journal)

Positional dependence of defect distribution in semipolar [Formula: see text] hydride vapor phase epitaxy-GaN films grown on [Formula: see text] patterned sapphire substrates

Uchiyama Toshiro, Takeuchi Shotaro, Kamada Shohei, Arauchi Takuji, Hashimoto Yasuhiro, Yamane Keisuke, Okada Narihito, Imai Yasuhiko, Kimura Shigeru, Tadatomo Kazuyuki, Sakai Akira

Jpn. J. Appl. Phys.　Vol. 55　No. 5　2016/04/12

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

Shuto Yamasaka, Kentaro Watanabe, Shunya Sakane, Shotaro Takeuchi, Akira Sakai, Kentarou Sawano, Yoshiaki Nakamura

SCIENTIFIC REPORTS　Vol. 6　2016/03　Research paper (scientific journal)

Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Technique

Tomohiro Ueda, Shunya Sakane, Takafumi Ishibe, Kentaro Watanabe, Shotaro Takeuchi, Akira Sakai, Yoshiaki Nakamura

JOURNAL OF ELECTRONIC MATERIALS　Vol. 45　No. 3　p. 1914-1920　2016/03　Research paper (scientific journal)

In-situ doped epitaxial growth of highly dopant-activated n+-Ge layers for reduction of parasitic resistance of Ge-nMISFETs

Y. Moriyama, Y. Kamimuta, K. Ikeda, A. Sakai, T. Tezuka

ECS Transactions　Vol. 75　No. 8　p. 373-385　2016　Research paper (international conference proceedings)

Epitaxial growth of iron oxide nanodots on Si substrate using Fe-coated Ge nuclei

T. Ishibe, K. Watanabe, S. Takeuchi, A. Sakai, Y. Nakamura

2015/12　Research paper (international conference proceedings)

Observation of covering epitaxial β-FeSi2 nanodots with Si for fabricating Si/β-FeSi2 nanodots stacked structures

S. Sakane, K. Watanabe, M. Isogawa, S. Takeuchi, A. Sakai, Y. Nakamura

2015/12　Research paper (international conference proceedings)

Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

S. Takeuchi, H. Asazu, M. Imanishi, Y. Nakamura, M. Imade, Y. Mori, A. Sakai

JOURNAL OF APPLIED PHYSICS　Vol. 118　No. 24　p. 245306-1-245306-7　2015/12　Research paper (scientific journal)

Formation and optical properties of Ge films grown on Si(111) substrates using nanocontact epitaxy

Kazuki Tanaka, Yoshiaki Nakamura, Shuto Yamasaka, Jun Kikkawa, Takenobu Sakai, Akira Sakai

Appl. Surf. Sci.　Vol. 325　p. 170-174　2015/11　Research paper (scientific journal)

Positional dependence of defect distribution in semipolar (20-21) HVPE-GaN films grown on (22-43) patterned sapphire substrates

T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadamoto, A. Sakai

2015/11　Research paper (international conference proceedings)

Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials

Shuto Yamasaka, Yoshiaki Nakamura, Tomohiro Ueda, Shotaro Takeuchi, Akira Sakai

Scientific Reports　Vol. 5　No. 14490　p. 1-9　2015/10/05　Research paper (scientific journal)

Phonon scattering control by structure of epitaxial Ge nanodots in Si

S. Yamanaka, Y. Nakamura, S. Takeuchi, A. Sakai

2015/07　Research paper (international conference proceedings)

Thermal conductivity reduction and carrier doping in the Si nanoarchitecture including epitaxial nanodots

Y. Nakamura, T. Ueda, M. Isogawa, S. Yamasaka, S. Takeuchi, A. Sakai

2015/07　Research paper (international conference proceedings)

X-ray microdiffraction as a promising method to characterize nanometer-scale structures and textures in semiconductor materials

A. Sakai

2015/06　Research paper (international conference proceedings)

Fabrication of Si Thermoelectric Nanomaterials Containing Ultrasmall Epitaxial Ge Nanodots with an Ultrahigh Density

Shuto Yamasaka, Yoshiaki Nakamura, Tomohiro Ueda, Shotaro Takeuchi, Yuta Yamamoto, Shigeo Arai, Takayoshi Tanji, Nobuo Tanaka, Akira Sakai

JOURNAL OF ELECTRONIC MATERIALS　Vol. 44　No. 6　p. 2015-2020　2015/06　Research paper (scientific journal)

Multi-scale characterization of defects in nitride semiconductor materials

A. Sakai

2015/05　Research paper (international conference proceedings)

Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy

Takuji Arauchi, Shotaro Takeuchi, Yasuhiro Hashimoto, Yoshiaki Nakamura, Keisuke Yamane, Narihito Okada, Yasuhiko Imai, Shigeru Kimura, Kazuyuki Tadatomo, Akira Sakai

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS　Vol. 252　No. 5　p. 1149-1154　2015/05　Research paper (scientific journal)

Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films grown on (22-43) patterned sapphire substrates

Shotaro Takeuchi, Toshiro Uchiyama, Takuji Arauchi, Yasuhiro Hashimoto, Yoshiaki Nakamura, Keisuke Yamane, Narihito Okada, Kazuyuki Tadatomo, Akira Sakai

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS　Vol. 252　No. 5　p. 1142-1148　2015/05　Research paper (scientific journal)

Anomalous reduction of thermal conductivity in coherent nanocrystal architecture for silicon thermoelectric material

Nakamura Yoshiaki, Isogawa Masayuki, Ueda Tomohiro, Yamasaka Shuto, Matsui Hideki, Kikkawa Jun, Ikeuchi Satoaki, Oyake Takafumi, Hori Takuma, Shiomi Junichiro, Sakai Akira

NANO ENERGY　Vol. 12　p. 845-851　2015/03　Research paper (scientific journal)

Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template

D. T. Khan, S. Takeuchi, Y. Nakamura, K. Nakamura, T. Arauchi, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai

JOURNAL OF CRYSTAL GROWTH　Vol. 411　p. 38-44　2015/02　Research paper (scientific journal)

Myoglobin-based non-precious metal carbon catalysts for an oxygen reduction reaction

Akira Onoda, Yuta Tanaka, Toshikazu Ono, Shotaro Takeuchi, Akira Sakai, Takashi Hayashi

JOURNAL OF PORPHYRINS AND PHTHALOCYANINES　Vol. 19　No. 1-3　p. 510-516　2015/01　Research paper (scientific journal)

Microstructure Analysis of a Thick AIN Film Grown on a Trench-Patterned AIN／Sapphire Template by X-Ray Microdiffraction

S. Takeuchi, D. T. Khan, Y. Nakamura, Y. Imai, S. Kimura, H. Miyake, K. Hiramatsu, A. Sakai

2014/11　Research paper (international conference proceedings)

In situ doped epitaxial growth of highly dopant-activated n(+)-Ge layers for reduction of parasitic resistance in Ge-nMISFETs

Yoshihiko Moriyama, Yuuichi Kamimuta, Yoshiki Kamata, Keiji Ikeda, Akira Sakai, Tsutomu Tezuka

APPLIED PHYSICS EXPRESS　Vol. 7　No. 10　2014/10　Research paper (scientific journal)

Self-assembly of Ge clusters on highly oriented pyrolytic graphite surfaces

Masayuki Shimonaka, Yoshiaki Nakamura, Jun Kikkawa, Akira Sakai

SURFACE SCIENCE　Vol. 628　p. 82-85　2014/10　Research paper (scientific journal)

Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films on (22-43) patterned sapphire substrate

T. Uchiyama, S. Takeuchi, T .Arauchi, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, A. Sakai

2014/08　Research paper (international conference proceedings)

Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction

T. Arauchi, S. Takeuchi, Y. Nakamura, Y. Imai, K. Yamane, N. Okada, S. Kimura, K. Tadatomo, A. Sakai

2014/08　Research paper (international conference proceedings)

Behaviors of dislocations in GaN crystals grown on point seeds in the Na-Flux coalescence growth

M. Imanishi, K. Murakami, K. Nakamura, H. Imabayashi, H. Takazawa, D. Matsuo, Y. Todoroki, M. Maruyama, H. Asazu, S. Takeuchi, Y. Nakamura, A. Sakai, M. Imade, M. Yoshimura, Y. Mori

2014/08　Research paper (international conference proceedings)

Electrical conduction characteristics of single crystal and directly-bonded Nb-doped SrTiO3

R. Asada, S. Kondo, S. Takeuchi, Y. Sugi, Y. Nakamura, A. Sakai

2014/08　Research paper (international conference proceedings)

Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers

Yoshihiko Moriyama, Keiji Ikeda, Shotaro Takeuchi, Yuuichi Kamimuta, Yoshiaki Nakamura, Koji Izunome, Akira Sakai, Tsutomu Tezuka

APPLIED PHYSICS EXPRESS　Vol. 7　No. 8　p. 086501-1-086501-4　2014/08　Research paper (scientific journal)

Thermal and electrical properties of Si films including epitaxial Ge nanodot phonon-scatterers

S. Yamasaka, Y. Nakamura, T. Ueda, S. Takeuchi, A. Sakai

2014/07　Research paper (international conference proceedings)

Dislocation behavior of surface-oxygen-concentration controlled Si wafers

Hirotada Asazu, Shotaro Takeuchi, Hiroya Sannai, Haruo Sudo, Koji Araki, Yoshiaki Nakamura, Koji Izunome, Akira Sakai

THIN SOLID FILMS　Vol. 557　p. 106-109　2014/04　Research paper (scientific journal)

Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template

Takuji Arauchi, Shotaro Takeuchi, Kunihiko Nakamura, Dinh Thanh Khan, Yoshiaki Nakamura, Hideto Miyake, Kazumasa Hiramatsu, Akira Sakai

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　Vol. 211　No. 4　p. 731-735　2014/04　Research paper (scientific journal)

Improvement effect of electrical properties in post- annealed waferbonded Ge(001)- OI substrate

Shuto Yamasaka, Yoshiaki Nakamura, Osamu Yoshitake, Jun Kikkawa, Koji Izunome, Akira Sakai

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE　Vol. 211　No. 3　p. 601-605　2014/03　Research paper (scientific journal)

Anomalous reduction of thermal conductivity of stacked epitaxial Si nanodot structures

Y. Nakamura, A.Sakai

2014/02　Research paper (international conference proceedings)

Introduction of Ultrahigh Density Ge Nanodots into Si Films for Si Based Thermoelectric Materials

S. Yamasaka, Y. Nakamura, T. Ueda, S. Takeuchi, A. Sakai

2014/02　Research paper (international conference proceedings)

Erratum: cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template (J. Cryst. Growth (2013) 381 (37-42), DOI: 10.1016/j.jcrysgro.2013.07.012)

D. T. Khan, S. Takeuchi, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, A. Sakai

Journal of Crystal Growth　Vol. 388　2014　Research paper (scientific journal)

Improvement of Current Drive of Ge-nMISFETs by Epitaxially Grown n(+)-Ge:P Source and Drain

Yoshihiko Moriyama, Yuuichi Kamimuta, Yoshiki Kamata, Keiji Ikeda, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai, Tsutomu Tezuka

2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM)　p. 35-36　2014　Research paper (international conference proceedings)

Improvement effect of electrical properties in post-annealed wafer-bonded Ge(001)-OI substrate

Shuto Yamasaka, Yoshiaki Nakamura, Osamu Yoshitake, Jun Kikkawa, Koji Izunome, Akira Sakai

Physica Status Solidi (A) Applications and Materials Science　Vol. 211　No. 3　p. 601-605　2014　Research paper (scientific journal)

Syncnrotron kadiation based X-ray iviicroaiffraction of advanced semiconductor materials

Akira Sakai

ECS Transactions　Vol. 64　No. 11　p. 255-263　2014　Research paper (international conference proceedings)

Improvement of Current Drive of Ge-nMISFETs by Epitaxially Grown n(+)-Ge:P Source and Drain

Yoshihiko Moriyama, Yuuichi Kamimuta, Yoshiki Kamata, Keiji Ikeda, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai, Tsutomu Tezuka

2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM)　p. 35-36　2014　Research paper (international conference proceedings)

Control of epitaxial growth of Fe-based nanocrystals on Si substrates using well-controlled nanometer-sized interface

Yoshiaki Nakamura, Ryota Sugimoto, Takafumi Ishibe, Hideki Matsui, Jun Kikkawa, Akira Sakai

JOURNAL OF APPLIED PHYSICS　Vol. 115　No. 4　2014/01　Research paper (scientific journal)

Local strain distribution in AlN thick films analyzed by X-ray microdiffraction

A. Sakai

2013/12　Research paper (international conference proceedings)

Microscopic structure analysis of a thick AIN film grown on a trench-patterned AIN/sapphire template by X-ray microdiffraction

D. T. Khan, S. Takeuchi, K. Nakamura, T. Arauchi, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai

2013/09　Research paper (international conference proceedings)

Variation of local residual strain and twist angle in growth direction of AIN films on trench-patterned 6H-SiC substrates

K. Nakamura, S. Takeuchi, D. T. Khan, T. Arauchi, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai

2013/09　Research paper (international conference proceedings)

In-situ P-doped Ge-rich SiGe selective epitaxy for strained Ge-nMISFETs

Y. Moriyama, Y. Kamimuta, Y. Kamata, K. Ikeda, S. Takeuchi, A. Sakai, T. Tezuka

2013/09

Influence of nanometer-sized interface on reaction of iron nanocrystals epitaxially grown on silicon substrates with oxygen gas

Hironobu Hamanaka, Yoshiaki Nakamura, Takafumi Ishibe, Jun Kikkawa, Akira Sakai

JOURNAL OF APPLIED PHYSICS　Vol. 114　No. 11　2013/09　Research paper (scientific journal)

Characterization of Ge Films on Si(001) Substrates Grown by Nanocontact Epitaxy

Wataru Ikeda, Yoshiaki Nakamura, Shogo Okamoto, Shotaro Takeuchi, Jun Kikkawa, Masakazu Ichikawa, Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 52　No. 9　2013/09　Research paper (scientific journal)

Anisotropic crystalline morphology of epitaxial thick AIN films grown on triangular-striped AIN/sapphire template

T. Arauchi, S. Takeuchi, K. Nakamura, D. T. Khan, Y. Nakamura, H. Miyake, K. Hiramatsu, A. Sakai

2013/08　Research paper (international conference proceedings)

Epitaxial growth of stacked β-FeSi2 nanodots on Si substrates and their thermoelectric properties

M. Isogawa, Y. Nakamura, J. Kikkawa, S.Takeuchi, A. Sakai

2013/07　Research paper (international conference proceedings)

Introduction of Ge nanodots in Si films as phonon scatterers and the thermal conductivity reduction

S. Yamasaka, Y. Nakamura, T. Ueda, S.Takeuchi, Y. Yamamoto, S. Arai, T. Tenji, N. Tanaka, A. Sakai

2013/07　Research paper (international conference proceedings)

Dislocation behavior of surface-oxygen-concentration controlled Si wafers

H. Asazu, S. Takeuchi, H. Sannai, H. Sudo, K. Araki, Y. Nakamura, K. Izunome, A. Sakai

2013/06　Research paper (international conference proceedings)

Quantitative evaluation of bonding strength of hybrid-box GeOI

Y. Moriyama, S. Takeuchi, K. Ikeda, Y. Kamimuta, A. Sakai, K. Izunome, T. Tezuka

8th International Conference on Si Epitaxy and Heterostructures/6th International Symposium on Control of Semiconductor Interfaces (ICSI-8/ISCSI-VI)　2013/06　Research paper (international conference proceedings)

Reduction of contact resistance on selectively grown phosphorus-doped n+-Ge layers

Y. Moriyama, Y. Kamata, K. Ikeda, S. Takeuchi, Y. Nakamura, A. Sakai, T. Tezuka

8th International Conference on Si Epitaxy and Heterostructures/6th International Symposium on Control of Semiconductor Interfaces (ICSI-8/ISCSI-VI)　2013/06　Research paper (international conference proceedings)

Semiconductor wafer bonding -Structural and electrical characteristics of GeOI substrates

A. Sakai, S. Yamasaka, Y. Moriyama, J. Kikkawa, S. Takeuchi, Y. Nakamura, T. Tezuka, K. Izunome

2013 Asia-Pacific Workshop on Fundamentals and applications of Advanced Semmiconductor Devices　2013/06

Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers

Yoshihiko Moriyama, Keiji Ikeda, Yuuichi Kamimuta, Minoru Oda, Toshifumi Irisawa, Yoshiaki Nakamura, Akira Sakai, Tsutomu Tezuka

SOLID-STATE ELECTRONICS　Vol. 83　p. 42-45　2013/05　Research paper (scientific journal)

Formation mechanism of peculiar structures on vicinal Si(1 1 0) surfaces

M. Yamashita, Y. Nakamura, R. Sugimoto, J. Kikkawa, K. Izunome, A. Sakai

Applied Surface Science　Vol. 267　p. 53-57　2013/02/15　Research paper (scientific journal)

Structural analysis of vicinal Si(110) surfaces with various off-angles

M. Yamashita, Y. Nakamura, A. Yamamoto, J. Kikkawa, K. Izunome, A. Sakai

APPLIED SURFACE SCIENCE　Vol. 267　p. 136-140　2013/02　Research paper (scientific journal)

Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al<inf>2</inf>O<inf>3</inf> template

D. T. Khan, S. Takeuchi, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, A. Sakai

Journal of Crystal Growth　Vol. 381　p. 37-42　2013　Research paper (scientific journal)

Distribution of Local Strain in Facet Controlled ELO (FACELO) GaN by X-ray Micro Diffraction

K. Nakamura, S. Harada, D. T. Khan, J. Kikkawa, S. Takeuchi, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai

2012/12

Cross-sectional X-ray Microdiffraction Study of Residual Strain Distribution in a Thick AlN Film Grown on a Trench-patterned AlN/α-Al2O3 Template

D. T. Khan, J. Kikkawa, S. Takeuchi, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, A. Sakai

8th Handai Nanoscience and Nanotechnology International Symposium　2012/12

Structural- and electrical characteristics of GeOI/BOX interfaces of bonded GeOI substrates with thin Al2O3/SiO2 hybrid BOX layers

Y. Moriyama, K. Ikeda, Y. Kamimuta, M. Oda, T. Irisawa, S. Takeuchi, Y. Nakamura, A. Sakai, T. Tezuka

The 6th International Symposiiium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium)　2012/11　Research paper (international conference proceedings)

Investigation of semiconductor nanostructures using focused X-ray beams

A. Sakai

NanoMalaysia Summit and Expo 2012　2012/11　Research paper (international conference proceedings)

Formation technique of stacked epitaxial Si nanodot structures and their thermal conductivity

Y. Nakamura, M. Isogawa, T. Ueda, J. Kikkawa, A. Sakai

2012/11　Research paper (international conference proceedings)

Local strain distribution in a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template measured by X-ray microdiffraction

D. T. Khan, S. Takeuchi, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai

2012/10　Research paper (international conference proceedings)

Vertical dislocations in Ge films selectively grown in submicron Si windows of patterned substrates

S. Harada, J. Kikkawa, Y. Nakamura, G. Wang, M. Caymax, A. Sakai

THIN SOLID FILMS　Vol. 520　No. 8　p. 3245-3248　2012/02　Research paper (scientific journal)

Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method

K. Minami, Y. Nakamura, S. Yamasaka, O. Yoshitake, J. Kikkawa, K. Izunome, A. Sakai

THIN SOLID FILMS　Vol. 520　No. 8　p. 3232-3235　2012/02　Research paper (scientific journal)

Characterization of Ge films on Si(001) substrates grown by nanocontact epitaxy

Yoshiaki Nakamura, Wataru Ikeda, Jun Kikkawa, Masakazu Ichikawa, Akira Sakai

2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings　p. 158-159　2012　Research paper (international conference proceedings)

Fabrication of bonded GeOI substrates with thin Al 2O 3/SiO 2 buried oxide layers

Yoshihiko Moriyama, Keiji Ikeda, Yuuichi Kamimuta, Minoru Oda, Toshifumi Irisawa, Yoshiaki Nakamura, Akira Sakai, Tsutomu Tezuka

2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings　p. 34-35　2012　Research paper (international conference proceedings)

First Demonstration of Threshold Voltage Control by Sub-1V Back-gate Biasing for Thin Body and Buried-oxide (TBB) Ge-on-Insulator (GOI) MOSFETs for Low-power Operation

Keiji Ikeda, Yoshihiko Moriyama, Mizuki Ono, Yuuichi Kamimuta, Toshifumi Irisawa, Yoshiki Kamata, Akira Sakai, Tsutomu Tezuka

IEEE INTERNATIONAL SOI CONFERENCE　2012　Research paper (international conference proceedings)

GOI Substrates -Fabrication and Characterization-

A. Sakai, S. Yamasaka, J. Kikkawa, S. Takeuchi, Y. Nakamura, Y. Moriyama, T. Tezuka, K. Izunome

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES　Vol. 50　No. 9　p. 709-725　2012　Research paper (international conference proceedings)

Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process

T. Kato, Y. Nakamura, P. P. T. Son, J. Kikkawa, A. Sakai

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV　Vol. 725　p. 261-264　2012　Research paper (international conference proceedings)

X-ray microdiffraction study of three-dimensional distribution of local strain in thick AlN film grown on a trench-patterned AlN/a-Al2O3 template

D. T. Khan, S. Harada, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, A. Sakai

15th International Conference on Thin Films　2011/11

Formation of ultrahigh density iron oxide nanodots on Si substrates with nanometer-sized interfaces

K. Tanaka, Y. Nakamura, H. Harada, J. Kikkawa, A. Sakai

7th Handai Nanoscience and Nanotechnology International Symposium　2011/11

Growth of vanadium dioxides nanowires using vanadyl acetylacetonate

T. Ishibe, J. Kikkawa, Y. Nakamura, A. Sakai

7th Handai Nanoscience and Nanotechnology International Symposium　2011/11

Electric-field control of spin accumulation signals in silicon at room temperature

Y. Ando, Y. Maeda, K. Kasahara, S. Yamada, K. Masaki, Y. Hoshi, K. Sawano, K. Izunome, A. Sakai, M. Miyao, K. Hamaya

APPLIED PHYSICS LETTERS　Vol. 99　No. 13　p. 132511-1-132511-3　2011/09　Research paper (scientific journal)

Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using a four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method

K. Minami, Y. Nakamura, S. Yamasaka, O. Yoshitake, J. Kikkawa, K. Izunome, A. Sakai

7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)　2011/08　Research paper (international conference proceedings)

Ge1-xSnx stressors for strained-Ge CMOS

S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, A. Sakai, O. Nakatsuka, S. Zaima

SOLID-STATE ELECTRONICS　Vol. 60　No. 1　p. 53-57　2011/06　Research paper (scientific journal)

Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition

Kazuya Isiizumi, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Junichi Yanagisawa

Jpn. J. Appl. Phys.　Vol. 50　No. 6　p. 06GC02-06GC02-4　2011/06　Research paper (scientific journal)

Control of strain relaxation behavior of Ge1-xSnx buffer layers

Yosuke Shimura, Shotaro Takeuchi, Osamu Nakatsuka, Akira Sakai, Shigeaki Zaima

SOLID-STATE ELECTRONICS　Vol. 60　No. 1　p. 84-88　2011/06　Research paper (scientific journal)

X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(001) substrates

Kouhei Ebihara, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Gang Wang, Matty Caymax, Yasuhiko Imai, Shigeru Kimura, Osami Sakata

SOLID-STATE ELECTRONICS　Vol. 60　No. 1　p. 26-30　2011/06　Research paper (scientific journal)

Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates

Osamu Yoshitake, Jun Kikkawa, Yoshiaki Nakamura, Eiji Toyoda, Hiromichi Isogai, Koji Izunome, Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 50　No. 4　p. 04DA13-1-04DA13-4　2011/04　Research paper (scientific journal)

Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal-Oxide-Semiconductor Field-Effect Transistor

Yuji Iwasaki, Yoshiaki Nakamura, Jun Kikkawa, Motoki Sato, Eiji Toyoda, Hiromichi Isogai, Koji Izunome, Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 50　No. 4　p. 04DA14-1-04DA14-4　2011/04　Research paper (scientific journal)

Self-organization of two-dimensional SiGe nanodot arrays using selective etching of pure-edge dislocation network

Yoshiaki Nakamura, Masahiko Takahashi, Tatsuki Fujiwara, Jun Kikkawa, Akira Sakai, Osamu Nakatsuka, Shigeaki Zaima

JOURNAL OF APPLIED PHYSICS　Vol. 109　No. 4　p. 044301-1-044301-4　2011/02　Research paper (scientific journal)

Microscopic Structure of Directly Bonded Silicon Substrates

Tetsuji Kato, Yuji Ohara, Takaya Ueda, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima, Eiji Toyoda, Hiromichi Isogai, Takeshi Senda, Kouji Izunome, Hiroo Tajiri, Osamu Sakata, Shigeru Kimura

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　Vol. 470　p. 164-+　2011　Research paper (international conference proceedings)

Structural Change during the Formation of Directly Bonded Silicon Substrates

Tetsuji Kato, Takaya Ueda, Yuji Ohara, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Osamu Nakatsuka, Shigeaki Zaima, Eiji Toyoda, Kouji Izunome, Yasuhiko Imai, Shigeru Kimura, Osamu Sakata

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　Vol. 470　p. 158-+　2011　Research paper (international conference proceedings)

Strained Ge and Ge1-xSnx Technology for Future CMOS Devices

Osamu Nakatsuka, Shotaro Takeuchi, Yosuke Shimura, Akira Sakai, Shigeaki Zaima

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　Vol. 470　p. 146-+　2011　Research paper (international conference proceedings)

Nanometer-scale Characterization Technique for Si Nanoelectric Materials using Synchrotron Radiation Microdiffraction

Shigeru Kimura, Yasuhiko Imai, Osami Sakata, Akira Sakai

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　Vol. 470　p. 104-+　2011　Research paper (international conference proceedings)

Microscopic Structure of Directly Bonded Silicon Substrates

Tetsuji Kato, Yuji Ohara, Takaya Ueda, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima, Eiji Toyoda, Hiromichi Isogai, Takeshi Senda, Kouji Izunome, Hiroo Tajiri, Osamu Sakata, Shigeru Kimura

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　Vol. 470　p. 164-+　2011　Research paper (international conference proceedings)

Structural Change during the Formation of Directly Bonded Silicon Substrates

Tetsuji Kato, Takaya Ueda, Yuji Ohara, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Osamu Nakatsuka, Shigeaki Zaima, Eiji Toyoda, Kouji Izunome, Yasuhiko Imai, Shigeru Kimura, Osamu Sakata

TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS　Vol. 470　p. 158-+　2011　Research paper (international conference proceedings)

Structural Analysis of Si-based Nanodot Arrays Self-organized by Selective Etching of SiGe/Si Films

M. Takahashi, Y. Nakamura, J. Kikkawa, O. Nakatsuka, S. Zaima, A. Sakai

18th International Colloquium on Scanning Probe Microscopy (ICSPM18)　2010/12　Research paper (international conference proceedings)

Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Y. Iwasaki, Y. Nakamura, J. Kikkawa, A. Sakai, M. Sato, E. Toyoda, H. Isogai, K. Izunome

2010/09　Research paper (international conference proceedings)

Annealing effects on Ge/SiO² interface structure in wafer-bonded germanium-on-insulator substrates

O. Yoshitake, J. Kikkawa, Y. Nakamura, A. Sakai, E. Toyoda, H. Isogai, K. Izunome

2010/09　Research paper (international conference proceedings)

Formation of Ge1-xSnx heteroepitaxial layers with high Sn content

Y. Shimura, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima

International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)　2010/06　Research paper (international conference proceedings)

Formation of ultrahigh density iron-based nanodots on Si (111) substrates using ultrathin SiO2 films

H. Hamanaka, Y. Nakamura, K. Tanaka, J. Kikkawa, A. Sakai

Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2010)　2010/06　Research paper (international conference proceedings)

Four-point-probe pseudo-MOSFET analysis of wafer-bonded germanium-on-insulator substrates

Y. Iwasaki, Y. Nakamura, J. Kikkawa, A. Sakai, M. Sato, E. Toyoda, H. Isogai, K. Izunome

Intenational Symposium on Technology Evolution for Silicon Nano-Electronics　2010/06　Research paper (international conference proceedings)

Transmission electron microscopy observation of Ge/SiO2 interfaces in wafer-bonded germanium-on-insulator substrates

O. Yoshitake, J. Kikkawa, Y. Nakamura, A. Sakai, E. Toyoda, H. Isogai, K. Izunome

Intenational Symposium on Technology Evolution for Silicon Nano-Electronics　2010/06　Research paper (international conference proceedings)

Formation of Ge1-xSnx heteroepitaxial layers with high Sn content

Y. Shimura, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima

Intenational Symposium on Technology Evolution for Silicon Nano-Electronics　2010/06　Research paper (international conference proceedings)

Bi-axially strained Ge grown on GeSn SRBs

O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai, S. Zaima

International Workshop of GeSn Developments and Future Applications　2010/05

Strain and domain texture of Ge films selectively grown in localized regions on Si(001) substrates

K. Ebihara, J. Kikkawa, Y. Nakamura, A. Sakai, G. Wang, M. Caymax, Y. Imai, S. Kimura, O. Sakata

The fifth International SiGe Technology and Device Meeting　2010/05　Research paper (international conference proceedings)

Annealing Effects on Ge/SiO2 Interfaces in Wafer-Bonded GOI Substrates

O. Yoshitake, J. Kikkawa, Y. Nakamura, A. Sakai, E. Toyoda, H. Isogai, K. Izunome

International Conference on Core Research and Engineering Science of Advanced Materials (Global COE Program) & Third International Conference on Nanospintronics Design and Realization, 3rd-ICNDR　2010/05

High-resolution X-ray microdiffraction analysis of local strain in semiconductor materials

Shigeru Kimura, Yasuhiko Imai, Osami Sakata, Akira Sakai

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings　p. 1506-1509　2010　Research paper (international conference proceedings)

Two-dimensional nanoarray of SiGe nanodots self-organized by selective etching method of edge dislocation network

Nakamura Yoshiaki, Takahashi Masahiko, Kikkawa Jun, Nakatsuka Osamu, Zaima Shigeaki, Sakai Akira

Abstract of annual meeting of the Surface Science of Japan　Vol. 30　No. 0　p. 223-223　2010

Characterization of wafer-bonded substrates for advanced channels in Si-based MOSFET

Akira Sakai

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings　p. 1517-1520　2010　Research paper (international conference proceedings)

Strain relaxation behavior of Ge1-xSnx buffer layers on Si and virtual Ge substrates

Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima

5th International WorkShop on New Group IV Semiconductor Nanoelectronics　2010/01

Potential of Ge1-xSnx alloys as high mobility channel materials and stressors

S. Takeuchi, Y. Shimura, T. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima

5th International WorkShop on New Group IV Semiconductor Nanoelectronics　2010/01

Microscopic characterization of Si(011)/Si(001) direct silicon bonding substrates

T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, O. Sakata

5th International WorkShop on New Group IV Semiconductor Nanoelectronics　2010/01

Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor

Hiroki Kondo, Shinnya Sakurai, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

Applied Physics Letters　Vol. 96　No. 1　2010　Research paper (scientific journal)

Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices

S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, S. Zaima

SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES　Vol. 33　No. 6　p. 529-535　2010　Research paper (international conference proceedings)

X-Ray Microdiffraction Study on Crystallinity of Micron-Sized Ge Films Selectively Grown on Si(001) Substrates

K. Ebihara, S. Harada, J. Kikkawa, Y. Nakamura, A. Sakai, G. Wang, M. Caymax, Y. Imai, S. Kimura, O. Sakata

SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES　Vol. 33　No. 6　p. 887-892　2010　Research paper (international conference proceedings)

Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor

Hiroki Kondo, Shinnya Sakurai, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

APPLIED PHYSICS LETTERS　Vol. 96　No. 1　p. 12105-1-12105-3　2010/01　Research paper (scientific journal)

High-Angular-Resolution Microbeam X-Ray Diffraction with CCD Detector

Yasuhiko Imai, Shigeru Kimura, Osami Sakata, Akira Sakai

X-RAY OPTICS AND MICROANALYSIS, PROCEEDINGS　Vol. 1221　No. 1　p. 30-+　2010　Research paper (international conference proceedings)

Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates

Osamu Nakatsuka, Norimasa Tsutsui, Yosuke Shimura, Shotaro Takeuchi, Akira Sakai, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 49　No. 4　p. 04DA10-1-04DA10-4　2010　Research paper (scientific journal)

Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

N. D. Nguyen, E. Rosseel, S. Takeuchi, J-L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, M. Caymax

THIN SOLID FILMS　Vol. 518　No. 6　p. S48-S52　2010/01　Research paper (scientific journal)

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing

T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata

THIN SOLID FILMS　Vol. 518　No. 6　p. S147-S150　2010/01　Research paper (scientific journal)

Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1-xGex structures on Si(001) substrates

Takuya Mizutani, Osamu Nakatsuka, Akira Sakai, Hiroki Kondo, Masaki Ogawa, Shigeaki Zaima

SOLID-STATE ELECTRONICS　Vol. 53　No. 11　p. 1198-1201　2009/11　Research paper (scientific journal)

Surface structural analysis of off-angled Si(110) substrates

M. Yamashita, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, M. Sato, H. Isogai, K. Izunome

5th Handai Nanoscience and Nanotechnology International Symposium　2009/09

Microstructures in directly bonded Si substrates

Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori

SOLID-STATE ELECTRONICS　Vol. 53　No. 8　p. 837-840　2009/08　Research paper (scientific journal)

Effect of annealing on mechanical properties of materials formed by focused au or si lon-beam-induced chemical vapor deposition using phenanthrene

Takuma Yo, Hideaki Tanaka, Takahiro Nagata, Naoki Fukata, Toyohiro Chikyow, Akira Sakai, Junichi Yanagisawa

Japanese Journal of Applied Physics　Vol. 48　No. 6　p. 06-FB034　2009/06　Research paper (scientific journal)

Formation and characterization of tensile-strained Ge layers on Ge1-xSnx buffer layers

S. Zaima, O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai

The 6th International Conference on Silicon Epitaxy and Heterostructures　2009/05　Research paper (international conference proceedings)

Low Temperature Growth of Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima

The 6th International Conference on Silicon Epitaxy and Heterostructures　2009/05　Research paper (international conference proceedings)

Analysis of Local Strain in Ge1-xSnx /Ge/Si(001) Heterostructures by X-ray Microdiffraction

O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai, Y. Imai, H. Tajiri, O. Sakata, S. Kimura, S. Zaima

The 6th International Conference on Silicon Epitaxy and Heterostructures　2009/05　Research paper (international conference proceedings)

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing

T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, O. Sakata

The 6th International Conference on Silicon Epitaxy and Heterostructures　2009/05　Research paper (international conference proceedings)

Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers

Yosuke Shimura, Norimasa Tsutsui, Osamu Nakatsuka, Akira Sakai, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 48　No. 4　p. 04C130-1-04C130-4　2009/04　Research paper (scientific journal)

Thermal Stability and Scalability of Mictamict Ti-Si-N Metal-Oxide-Semiconductor Gate Electrodes

Hiroki Kondo, Kouhei Furumai, Mitsuo Sakashita, Akira Sakai, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 48　No. 4　p. 04C012-1-04C012-5　2009/04　Research paper (scientific journal)

Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates

Eiji Toyoda, Akira Sakai, Hiromichi Isogai, Takeshi Senda, Koji Izunome, Kazuhiko Omote, Osamu Nakatsuka, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 48　No. 2　p. 021208-1-021208-4　2009/02　Research paper (scientific journal)

Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge_1-xSn_x Buffer Layer

Shimura Yosuke, Tsutsui Norimasa, Nakatsuka Osamu, Sakai Akira, Zaima Shigeaki

Transactions of the Materials Research Society of Japan　Vol. 34　No. 2　p. 301-304　2009　Research paper (scientific journal)

Mechanical Properties and Chemical Reactions at the Directly Bonded Si-Si Interface

Eiji Toyoda, Akira Sakai, Hiromichi Isogai, Takeshi Senda, Koji Izunome, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 48　No. 1　p. 011202-1-011202-5　2009/01　Research paper (scientific journal)

Formation of Uniaxial Tensile-strained Ge by using Micro-patterning of Ge/Si1-xGex/Si Structures

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, S. Zaima

The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)　2008/12　Research paper (international conference proceedings)

Formation and Characterization of Tensile-strained Ge layers on Ge1-xSnx Buffer Layers

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima

The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)　2008/12　Research paper (international conference proceedings)

Strain and interfacial defects in directly bonded Si substrates

Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura

The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)　2008/12　Research paper (international conference proceedings)

Atomistic analysis of directly bonded Si substrate interface

T. Ueda, Y. Ohara, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, T. Sakata, H. Mori

The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)　2008/12　Research paper (international conference proceedings)

Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates

E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, K. Omote, S. Zaima

The 5th International Symposium on Advanced Science and Technology of Silicon Materials　Vol. 48　No. 2　2008/11　Research paper (international conference proceedings)

Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates

Shotaro Takeuchi, Akira Sakai, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima

THIN SOLID FILMS　Vol. 517　No. 1　p. 159-162　2008/11　Research paper (scientific journal)

Silicide and germanide technology for contacts and gates in MOSFET applications

Shigeaki Zaima, Osamu Nakatsuka, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa

THIN SOLID FILMS　Vol. 517　No. 1　p. 80-83　2008/11　Research paper (scientific journal)

Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films

Hiroki Kondo, Tomonori Ueyama, Eiji Ikenaga, Keisuke Kobayashi, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

THIN SOLID FILMS　Vol. 517　No. 1　p. 297-299　2008/11　Research paper (scientific journal)

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates

E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, S. Zaima

THIN SOLID FILMS　Vol. 517　No. 1　p. 323-326　2008/11　Research paper (scientific journal)

Annealing Effect of Deposited Materials formed byFocused Au Ion Beam-induced Chemical Vapor Deposition using Phenanthrene

T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, J. Yanagisawa

Digest of Papers 2008 International Microprocess and Nanotechnology Conference　2008/10　Research paper (international conference proceedings)

Formation of Tensile-Strained Ge Layers on Ge_<1-x>Sn_x Buffer Layers and Control of Strain and Dislocation Structures

NAKATSUKA Osamu, SHIMURA Yosuke, ZAIMA Shigeaki, SAKAI Akira

4th International WorkShop on New Group IV Semiconductor Nanoelectronics　Vol. 2008　No. 24　p. 25-29　2008/09/27

Control of Sn Precipitation and Strain relaxation in Compositionally Step-graded Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima

2008 International Conference on Solid State Devices and Materials (SSDM)　2008/09　Research paper (international conference proceedings)

Analysis of Uniaxial Tensile Strain in Microfabricated Ge/Si1-x Gex Structures on Si(001) Substrates

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, S. Zaima

4th International WorkShop on New Group IV Semiconductor Nanoelectronics　2008/09　Research paper (international conference proceedings)

Formation and Characterization of Compositionally Step-graded Ge1-x Snx Buffer Layers for Tensile-strained Ge Layers

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima

4th International WorkShop on New Group IV Semiconductor Nanoelectronics　2008/09　Research paper (international conference proceedings)

Effect of alcohol sources on synthesis of single-walled carbon nanotubes

Satoshi Oida, Akira Sakai, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima

APPLIED SURFACE SCIENCE　Vol. 254　No. 23　p. 7697-7702　2008/09　Research paper (scientific journal)

Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates

Masahiro Yamazaki, Shotaro Takeuchi, Osamu Nakatsuka, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

APPLIED SURFACE SCIENCE　Vol. 254　No. 19　p. 6048-6051　2008/07　Research paper (scientific journal)

Fabrication of Pr oxide by MOCVD and evaluation of its electrical properties

近藤博基, 櫻井晋也, 酒井朗, 小川正毅, 財満鎭明

電子情報通信学会技術研究報告　Vol. 108　No. 80(SDM2008 42-57)　2008/06

Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using AuSi alloyed metal source

Takuma Yo, Hideaki Tanaka, Kakunen Koreyama, Takahiro Nagata, Yoshiki Sakuma, Kiyomi Nakajima, Toyohiro Chikyow, Junichi Yanagisawa, Akira Sakai

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 47　No. 6　p. 5018-5021　2008/06　Research paper (scientific journal)

Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Shotaro Takeuchi, Yosuke Shimura, Osamu Nakatsuka, Shigeaki Zaima, Masaki Ogawa, Akira Sakai

APPLIED PHYSICS LETTERS　Vol. 92　No. 23　p. 231916-1-231916-3　2008/06　Research paper (scientific journal)

Microstructures in Directly Bonded Si Substrates

A. Sakai, Y. Ohara, T. Ueda, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda

Abstract Book of The fourth International SiGe Technology and Device Meeting　2008/05　Research paper (international conference proceedings)

Effect of Hydrogen on Initial Growth of Sn and Ge1-xSnx on Ge(001) substrates

M. Yamazaki, O. Nakatsuka, T. Shinoda, A. Sakai, M. Ogawa, S. Zaima

Abstract Book of The fourth International SiGe Technology and Device Meeting　2008/05　Research paper (international conference proceedings)

Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates

E. Toyoda, A. Sakai, O. Nakatuka, S. Zaima, M. Ogawa, H. Isogai, T. Senda, K. Izunome, K. Omote

Abstract Book of The fourth International SiGe Technology and Device Meeting　Vol. 48　No. 2　2008/05　Research paper (international conference proceedings)

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

Satoshi Oida, Akira Sakai, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 47　No. 5　p. 3742-3747　2008/05　Research paper (scientific journal)

Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, S. Zaima

Abstract Book of The fourth International SiGe Technology and Device Meeting　p. 149-150　2008/05　Research paper (international conference proceedings)

Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System

Nakatsuka Osamu, Suzuki Atsushi, Akimoto Shingo, Sakai Akira, Ogawa Masaki, Zaima Shigeaki

Jpn J Appl Phys　Vol. 47　No. 4　p. 2402-2406　2008/04/25

Crystalline and electrical properties of mictamict TiSiN gate metal-oxcide-semiconductor capacitors

Kouhei Furumai, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 47　No. 4　p. 2420-2424　2008/04　Research paper (scientific journal)

Development of high-density radical source for radical nitridation process in ULSI technology development of high-density radical source for radical nitridation process in ULSI technology

H. Kondo, S. Oda, S. Takashima, A. Sakai, M. Ogawa, S. Zaima, M. Hori, S. Den, H. Kano

The International Conference on Plasma-NanoTechnology and Science　2008/03

Contact properties of epitaxial NiSi<inf>2</inf>/heavily doped Si structures formed from Ni/Ti/Si systems

S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

Advanced Metallization Conference (AMC)　p. 101-105　2008　Research paper (international conference proceedings)

窒素ラジカル暴露によるGe(001)表面処理

近藤博基, 藤田美里, 酒井朗, 小川正毅, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-（第13回研究会）　2008/01　Research paper (other academic)

Ge基板上に作製したPr酸化膜の評価

坂下満男, 鬼頭伸幸, 加藤亮祐, 近藤博基, 中塚理, 酒井朗, 小川正毅, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-（第13回研究会）　2008/01　Research paper (other academic)

ミクタミクトTiSiNゲートMOSキャパシタの結晶構造及び電気的特性の評価

古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

ゲートスタック研究会 -材料・プロセス・評価の物理-（第13回研究会）　2008/01　Research paper (other academic)

Contact properties of epitaxial NiSi2/heavily doped Si structures formed from Ni/Ti/Si systems

S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007)　Vol. 23　p. 101-105　2008　Research paper (international conference proceedings)

Interface and defect control for group IV channel engineering

A. Sakai, Y. Ohara, T. Ueda, E. Toyoda, K. Izunome, S. Takeuchi, Y. Shimura, O. Nakatsuka, M. Ogawa, S. Zaima, S. Kimura

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES　Vol. 16　No. 10　p. 687-+　2008　Research paper (international conference proceedings)

Growth and characterization of tensile-strained Ge layers on strain relaxed Ge1-xSnx buffer layers

O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, S. Zaima

3rd International WorkShop on New Group IV Simiconductor Nanoelectronics　2007/11

Tensile strained Ge layers grown on compositionally step-graded Ge1-xSnx buffer layers

Y. Shimura, S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima

3rd International WorkShop on New Group IV Simiconductor Nanoelectronics　2007/11

Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates

M. Yamazaki, S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima

Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)　2007/11　Research paper (international conference proceedings)

Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures

A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, S. Zaima

Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)　2007/11　Research paper (international conference proceedings)

Characterization of Local Strains in Si1-xGex Hetero-mesa Structures on Si(001) Substrates by Using X-ray Microdiffraction

O. Nakatsuka, K. Yukawa, S. Mochizuki, A. Sakai, K. Fukuda, S. Kimura, O. Sakata, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, S. Zaima

Fifth International Symposium on Control of Semiconductor Interfaces　2007/11

Defect Control for Ge/Si and Ge1-xSnx/Ge/Si Heterostructures

A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, S. Zaima

Fifth International Symposium on Control of Semiconductor Interfaces　2007/11

Growth and Characterization of Tensile-Strained Ge Layers on Strain Relaxed Ge1-xSnx Buffer Layers

O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, S. Zaima

The 3nd international workshop on new group IV semiconductor nanoelectronics　2007/11

Electrical and Crystalline Properties of Epitaxial NiSi2/Si Contacts Fromed in Ni/Ti/Si(001) Systems

O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, S. Zaima

The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing　2007/11

Structural and Electrical Properties of Metal-germanide MOS Gate Electrodes

H. Kondo, D. Ikeno, Y. Kaneko, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima

The Sixth Pacific Rim Inernational Conference on Advanced Materials and Processing　2007/11

シリコン表面の窒化初期過程とエネルギーバンドキャップの形成

近藤博基, 財満鎭明, 堀勝, 酒井朗, 小川正毅

真空　2007/11　Research paper (scientific journal)

Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System

NAKATSUKA Osamu, SUZUKI Atsushi, AKIMOTO Shingo, SAKAI Akira, OGAWA Masaki, ZAIMA Shigeaki

Vol. 2007　p. 1038-1039　2007/09/19　Research paper (international conference proceedings)

Pr-Oxide-Based Dielectric Films on Ge Substrates

SAKASHITA Mitsuo, KITO Nobuyuki, SAKAI Akira, KONDO Hiroki, NAKATSUKA Osamu, OGAWA Masaki, ZAIMA Shigeaki

Ext. Abstr. Int. Conf. Solid State Devices and Materials, Tsukuba, Japan, Sep. 2007　Vol. 2007　No. 85　p. 330-331　2007/09/19　Research paper (international conference proceedings)

Surface treatment of Ge(001) surface by radical nitridation

H. Kondo, M. Fujita, A. Sakai, M. Ogawa, S. Zaima

Extended Abstracts of the 2007 International Conference on Solid State Device and Materials　2007/09　Research paper (international conference proceedings)

Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors

K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima

Extended Abstracts of the 2007 International Conference on Solid State Device and Materials　2007/09　Research paper (international conference proceedings)

Development of new high-density radical sources and its application to radical nitridation of Ge surfaces

H. Kondo, S. Oda, S. Takashima, A. Sakai, M. Ogawa, S. Zaima, M. Hori, S. Den, H. Kano

The 20th Symposium on Plasma Science for Materials　2007/06　Research paper (other academic)

Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates

S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima

5th International Conference on Silicon Epitaxy and Heterostructures　2007/05　Research paper (international conference proceedings)

Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films

H. Kondo, T. Ueyama, E. Ikenaga, K. Kobayashi, A. Sakai, M. Ogawa, S. Zaima

5th International Conference on Silicon Epitaxy and Heterostructures　2007/05　Research paper (international conference proceedings)

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates

E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, O. Nakatsuka, M. Ogawa, S. Zaima

5th International Conference on Silicon Epitaxy and Heterostructures　2007/05　Research paper (international conference proceedings)

Strain and dislocations in group IV semiconductor heterostructures

A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima

2007/04

Behavior of local charge-trapping sites in La2O3-Al2O3 composite films under constant voltage stress

Toshifumi Sago, Akiyoshi Seko, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 46　No. 4B　p. 1879-1884　2007/04　Research paper (scientific journal)

Composition dependence of work function in metal (Ni,Pt)-germanide gate electrodes

Daisuke Ikeno, Yukihiro Kaneko, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 46　No. 4B　p. 1865-1869　2007/04　Research paper (scientific journal)

Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using an AuSi alloyed metal source

T. Yo, H. Tanaka, K. Koreyama, T. Nagata, Y. Sakuma, K. Nakajima, T. Chikyow, J. Yanagisawa, A. Sakai

MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS　p. 150-+　2007　Research paper (international conference proceedings)

Silicide and germanide technology for contacts and metal gates in MOSFET applications

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa

ECS Transactions　Vol. 11　No. 6　p. 197-205　2007　Research paper (international conference proceedings)

Impact of Pt incorporation on thermal stability of NiGe layers on Ge(001) substrates

Osamu Nakatsuka, Atsushi Suzuki, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007　p. 87-88　2007　Research paper (international conference proceedings)

Pt-germanideゲート電極の結晶構造及び電気的特性の評価”

池野大輔, 古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会）　2007/01　Research paper (other academic)

パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価

鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会）　2007/01　Research paper (other academic)

Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価

山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会）　2007/01　Research paper (other academic)

Growth and energy bandgap formation of silicon nitride films in radical nitridation

Hiroki Kondo, Keigo Kawaai, Akira Sakai, Masaru Hori, Shigeaki Zaima, Yukio Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 46　No. 1　p. 71-75　2007/01　Research paper (scientific journal)

Rare-earth metal oxides and their silicates/aluminates as future gate dielectric films

Akira Sakai, Mitsuo Sakashita, Masaki Ogawa, Shigeaki Zaima

ECS Transactions　Vol. 6　No. 3　p. 99-118　2007　Research paper (international conference proceedings)

Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates

Shogo Mochizuki, Akira Sakai, Osamu Nakatsuka, Hiroki Kondo, Katsunori Yukawa, Koji Izunome, Takeshi Senda, Eiji Toyoda, Masaki Ogawa, Shigeaki Zaima

SEMICONDUCTOR SCIENCE AND TECHNOLOGY　Vol. 22　No. 1　p. S132-S136　2007/01　Research paper (scientific journal)

Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates

Shotaro Takeuchi, Akira Sakai, Koji Yamamoto, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima

SEMICONDUCTOR SCIENCE AND TECHNOLOGY　Vol. 22　No. 1　p. S231-S235　2007/01　Research paper (scientific journal)

Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies

Hideto Yanagisawa, Satoko Shinkai, Katsutaka Sasaki, Junpei Sakurai, Yoshio Abe, Akira Sakai, Shigeaki Zaima

JOURNAL OF CRYSTAL GROWTH　Vol. 297　No. 1　p. 80-86　2006/12　Research paper (scientific journal)

Evaluation of trapped charge distributions in stressed gate SiO2 films using conductive atomic force microscopy

A. Seko, Y. Watanabe, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima

2006/11　Research paper (international conference proceedings)

Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system

Osamu Nakatsuka, Atsushi Suzuki, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

MICROELECTRONIC ENGINEERING　Vol. 83　No. 11-12　p. 2272-2276　2006/11　Research paper (scientific journal)

Control of strain and dislocation structures in Ge_<1-x>Sn_x buffer layers on virtual Ge substrates

TAKEUCHI Shotaro, SAKAI Akira, NAKATSUKA Osamu, OGAWA Masaki, ZAIMA Shigeaki

The 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics　Vol. 2006　No. 15　p. 19-24　2006/10/03

Development of high-angular-resolution microdiffraction system for reciprocal space map measurements

Shingo Takeda, Shigeru Kimura, Osami Sakata, Akira Sakai

Japanese Journal of Applied Physics, Part 2: Letters　Vol. 45　No. 37-41　p. L1054-L1056　2006/10　Research paper (scientific journal)

Mosaicity and dislocations in strain-relaxed SiGe buffer layers on SOI substrates

O. Nakatsuka, N. Taoka, A. Sakai, S. Mochizuki, M. Ogawa, S. Zaima

2006/10

Dislocation structure and strain relaxation of SiGe and Ge sub-micron stripe lines on Si(001) substrates

O. Nakatsuka, S. Mochizuki, A. Sakai, H. Kondo, K. Yukawa, M. Ogawa, S. Zaima

2006/10

Buffer layer technology with misfit dislocation engineering

A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima

2006/10

Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes

IKENO Daisuke, FURUMAI Kouhei, KONDO Hiroki, SAKASHITA Mitsuo, SAKAI Akira, OGAWA Masaki, ZAIMA Shigeaki

Vol. 2006　p. 442-443　2006/09/13　Research paper (international conference proceedings)

Behavior of Local Charge Trapping Sites in La_2O_3-Al_2O_3 Composite Films under Constant Voltage Stress

SAGO Toshifumi, SEKO Akiyoshi, SAKASHITA Mitsuo, SAKAI Akira, OGAWA Masaki, ZAIMA Shigeaki

Vol. 2006　p. 418-419　2006/09/13　Research paper (international conference proceedings)

Dislocations and related strain in group IV semiconductor heterostructures - Practical control for Si-based electronic devices

A. Sakai, S. Zaima

2006/09

Interfacial structure of HfON/SiN/Si gate stacks

O. Nakatsuka, M. Sakashita, H. Kondo, E. Ikenaga, M. Kobata, J.-J. Kim, H. Nohira, T. Hattori, A. Sakai, M. Ogawa, S. Zaima

The 2nd International Workshop on Hard X-ray Photoelectron Spectroscopy　2006/09　Research paper (other academic)

Dislocation Morphology and Crystalline Mosaicity in Strain-Relaxed SiGe Buffer Layers on SOI

SAKAI Akira, TAOKA Noriyuki, NAKATSUKA Osamu, OGAWA Masaki, ZAIMA Shigeaki

IEEJ Transactions on Electronics, Information and Systems　Vol. 126　No. 9　p. 1083-1087　2006/09/01

Silicide and related materials for ULSI applications

S. Zaima, A. Sakai, M. Ogawa

2006/07

Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates

Noriyuki Taoka, Akira Sakai, Shogo Mochizuki, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima

THIN SOLID FILMS　Vol. 508　No. 1-2　p. 147-151　2006/06　Research paper (scientific journal)

Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction

Shogo Mochizuki, Akira Sakai, Noriyuki Taoka, Osamu Nakatsuka, Shingo Takeda, Shigeru Kimura, Masaki Ogawa, Shigeaki Zaima

THIN SOLID FILMS　Vol. 508　No. 1-2　p. 128-131　2006/06　Research paper (scientific journal)

Nano-scale observation for local current leakage in high-k gate dielectrics using conductive atomic force microscopy

S. Zaima, A. Seko, T. Sago, M. Sakashita, A. Sakai, M. Ogawa

2006/05

歪緩和Si1-xGex/Si(001)界面の刃状転位ネットワーク

酒井朗

材料開発のための顕微鏡法と応用写真集　2006/04

Systematic characterization of Ni full silicide in sub-100 nm gate regions

D. Ito, A. Sakai, O. Nakatsuka, H. Kondo, Y. Akasaka, M. Ogawa, S. Zaima

2006/04

Engineering of strain and dislocations at group IV semiconductor thin-film interfaces for next-generation silicon ULSI

酒井朗, 財満鎮明

応用物理　Vol. 75　No. 4　p. 426-434　2006/04

Characterization of local current leakage in La2O3-Al2O3 composite films by conductive atomic force microscopy

Akiyoshi Seko, Toshifumi Sago, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 45　No. 4B　p. 2954-2960　2006/04　Research paper (scientific journal)

Film structures and electrical properties of Pr silicate formed by pulsed laser deposition

Keiko Ariyoshi, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 45　No. 4B　p. 2903-2907　2006/04　Research paper (scientific journal)

Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system

O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

Materials for Advanced Metallization Conference 2006　2006/03　Research paper (international conference proceedings)

Dislocation morphology and crystalline mosaicity in strain-relaxed SiGe buffer layers on SOI

A. Sakai, N. Taoka, O. Nakatsuka, M. Ogawa, S. Zaima

IEEJ Transactions on Electronics, Information and Systems　Vol. 126　No. 9　2006　Research paper (scientific journal)

Electrical properties and bonding structures of germanium nitride/Ge(100) structures formed by radical nitridation

H. Kondo, I. Yanagi, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima

ECS Transactions　Vol. 3　No. 7　p. 287-289　2006　Research paper (international conference proceedings)

La2O3-Al2O3複合膜中の局所電流リークの起源と酸素熱処理の効果

世古明義, 佐合寿文, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会研究報告 ゲートスタック研究会 ‐材料・プロセス・評価の物理‐(第11回研究会)　2006/01　Research paper (other academic)

La2O3-Al2O3複合膜における定電圧ストレス印加時の局所的な電荷捕獲とその放出過程

佐合寿文, 世古明義, 坂下満男, 酒井朗, 小川正毅, 財満鎭明

Technical report of IEICE (信学技報)　Vol. 106　No. 108　p. 19-24　2006/01　Research paper (scientific journal)

Scanning tunneling microscopy study on the reaction of oxygen with clean Ge(001) surfaces

Akira Sakai, Yasunobu Wakazono, Osamu Nakatsuka, Shigeaki Zaima, Masaki Ogawa

ECS Transactions　Vol. 3　No. 7　p. 1197-1203　2006　Research paper (international conference proceedings)

Ni-silicide/Si and SiGe(C) contact technology for ULSI applications

Osamu Nakatsuka, Shigeaki Zaima, Akira Sakai, Masaki Ogawa

14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006　p. 31-37　2006　Research paper (international conference proceedings)

Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates

Shogo Mochizuki, Akira Sakai, Osamu Nakatsuka, Hiroki Kondo, Katsunori Yukawa, Koji Izunome, Takeshi Senda, Eiji Toyoda, Masaki Ogawa, Shigeaki Zaima

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest　Vol. 2006　2006　Research paper (international conference proceedings)

Growth and structure evaluation of strain-relaxed Ge<inf>1-x</inf>Sn <inf>x</inf> buffer layers on virtual Ge(001) substrates

Shotaro Takeuchi, Akira Sakai, Koji Yamamoto, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest　Vol. 2006　2006　Research paper (international conference proceedings)

Control and characterization of strain in SiGe/Si heterostructures with engineered misfit dislocations

A. Sakai, N. Taoka, S. Mochizuki, K. Yukawa, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, S. Zaima

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest　Vol. 2006　2006　Research paper (international conference proceedings)

Reliability Evaluation of Thin Gate Dielectric using Conductive Atomic Force Microscopy(Failure Analysis Technique and Tools in the Nanotechnology Era)

SEKO Akiyoshi, SAKASHITA Mitsuo, SAKAI Akira, ZAIMA Shigeaki

The Journal of Reliability Engineering Association of Japan　Vol. 28　No. 3　p. 163-174　2006

Initial growth process of TiN films in ultrahigh-vacuum rapid thermal chemical vapor deposition

Y Okuda, S Naito, O Nakatsuka, H Kondo, T Okuhara, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 45　No. 1A　p. 49-53　2006/01　Research paper (scientific journal)

Improvement in NiSi/Si contact properties with gimplantation

O Nakatsuka, K Okubo, A Sakai, M Ogawa, Y Yasuda, S Zaima

MICROELECTRONIC ENGINEERING　Vol. 82　No. 3-4　p. 479-484　2005/12　Research paper (scientific journal)

Fabrication technology of SiGe hetero-structures and their properties

Y Shiraki, A Sakai

SURFACE SCIENCE REPORTS　Vol. 59　No. 7-8　p. 153-207　2005/11

Epitaxial NiSi2 layers with extremely flat interfaces in Ni/Ti/Si(001) system

A. Suzuki, K. Okubo, O. Nakatsuka, A. Sakai, M. Ogawa, S. Zaima

2005/10

Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates

N Taoka, A Sakai, S Mochizuki, O Nakatsuka, M Ogawa, S Zaima, T Tezuka, N Sugiyama, S Takagi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 44　No. 10　p. 7356-7363　2005/10　Research paper (scientific journal)

Analysis of local breakdown process in stressed gate SiO2 films by conductive atomic force microscopy

A Seko, Y Watanabe, H Kondo, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 44　No. 10　p. 7582-7587　2005/10　Research paper (scientific journal)

Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy

SEKO Akiyoshi, SAGO Toshifumi, SAKASHITA Mitsuo, SAKAI Akira, OGAWA Masaki, ZAIMA Shigeaki

Vol. 2005　p. 246-247　2005/09/13　Research paper (international conference proceedings)

Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy

ZAIMA Shigeaki, SEKO Akiyoshi, WATANABE Yukihiko, SAGO Toshifumi, SAKASHITA Mitsuo, KONDO Hiroki, SAKAI Akira, OGAWA Masaki

Vol. 2005　p. 236-237　2005/09/13　Research paper (international conference proceedings)

Film structures and electrical properties of Pr silicate formed by pulsed laser deposition

K. Ariyoshi, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima

Extended Abstracts of the 2005 International Conference on Solid State Device and Materials　Vol. 45　No. 4　p. 2903-2907　2005/09　Research paper (international conference proceedings)

Fabrication and evaluation of floating gate memories with surface-nitrided Si nanocrystals

S Naito, T Ueyama, H Kondo, M Sakashita, A Sakai, M Ogawa, S Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 44　No. 7B　p. 5687-5691　2005/07　Research paper (scientific journal)

Surface structures in the initial growth of epitaxial Si1-x-yGexCy layers in SiGe and C alternate deposition

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, M. Ogawa, Y. Yasuda, S. Zaima

First International WorkShop on New Group IV Semiconductor Nanoelectronics　2005/05

Control of solid-phase reaction and electrical properties of Ni silicide/Si contacts by Ge and C incorporation

O. Nakatsuka, K. Okubo, A. Sakai, J. Murota, Y. Yasuda, M. Ogawa, S. Zaima

2005/05

Surface structures in the initial growth of epitaxial Si1-x-yGexCy layers in SiGe and C alternate deposition

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, M. Ogawa, Y. Yasuda, S. Zaima

2005/05

Hard x-ray photoelectron spectroscopy for HfON/SiN/Si system

O. Nakatsuka, R. Takahashi, M. Sakashita, E. Ikenaga, K. Kobayashi, H. Nohira, T. Hattori, A. Sakai, M. Ogawa, S. Zaima

2005/05　Research paper (international conference proceedings)

Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction

S. Mochizuki, A. Sakai, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, S. Zaima

2005/05　Research paper (international conference proceedings)

Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima

2005/05　Research paper (international conference proceedings)

Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems

A Sakai, N Taoka, O Nakatsuka, S Zaima, Y Yasuda

APPLIED PHYSICS LETTERS　Vol. 86　No. 22　p. 221916-1-221916-3　2005/05　Research paper (scientific journal)

Low-temperature formation of epitaxial NiSi2 layers with solid-phase reaction in Ni/Ti/Si(001) systems

O Nakatsuka, K Okubo, Y Tsuchiya, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 44　No. 5A　p. 2945-2947　2005/05　Research paper (scientific journal)

Growth of high-quality carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition for field emitters

Y Kojima, S Kishimoto, Y Ohno, A Sakai, T Mizutani

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 44　No. 4B　p. 2600-2603　2005/04　Research paper (scientific journal)

Thermal stability and electrical properties of (La2O3)(1-x)(Al2O3)(x) composite films

R Fujitsuka, M Sakashita, A Sakai, M Ogawa, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 44　No. 4B　p. 2428-2432　2005/04　Research paper (scientific journal)

Improvement on NiSi/Si contact properties with C-implantation

S. Zaima, O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, Y. Yasuda

Materials for Advanced Metallization Conference 2005　2005/03　Research paper (international conference proceedings)

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations

N Taoka, A Sakai, T Egawa, O Nakatsuka, S Zaima, Y Yasuda

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　Vol. 8　No. 1-3　p. 131-135　2005/02　Research paper (scientific journal)

Initial growth behaviors of SiGeC in SiGe and C alternate deposition

S Takeuchi, O Nakatsuka, Y Wakazono, A Sakai, S Zaima, Y Yasuda

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING　Vol. 8　No. 1-3　p. 5-9　2005/02　Research paper (scientific journal)

Novel Approach to Epitaxial Growth with Buffer Layers Strain and Dislocation Engineering in Si_1-xGe_x Buffer Layers

田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎮明

日本結晶成長学会誌　Vol. 32　No. 2　2005/01

Transmission electron microscopy analysis of dislocation structures in the strain-relaxed SiGe films on Si and silicon-on-insulator substrates

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, Y. Yasuda

2005/01

Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals

Naito Shinya, Ueyama Tomonori, Kondo Hiroki, Sakashita Mitsuo, Sakai Akira, Ogawa Masaki, Zaima Shigeaki

Japanese Journal of Applied Physics　Vol. 44　No. 7　p. 5687-5691　2005　Research paper (international conference proceedings)

最近10年の結晶成長の動き エピタキシャル成長技術の進展を振り返って

酒井朗

日本結晶成長学会誌　Vol. 31　No. 5　2005

Impact of C implantation on electrical properties of NiSi/Si contact

O Nakatsuka, K Okubo, A Sakai, M Ogawa, S Zaima

Fifth International Workshop on Junction Technology　p. 91-92　2005　Research paper (international conference proceedings)

Analysis of Local Leakage Current on La₂O₃-Al₂O₃ Composite Films by Conductive Atomic Force Microscopy

世古明義, 佐合寿文, 藤塚良太, 藤塚良太, 坂下満男, 酒井朗, 小川正毅, 財満鎮明

電子情報通信学会技術研究報告　Vol. 105　No. 109(SDM2005 70-86)　2005/01

Epitaxial growth of (001)ZrN thin films on (001)Si by low temperature process

H Yanagisawa, S Shinkai, K Sasaki, Y Abe, A Sakai, S Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 44　No. 1A　p. 343-349　2005/01　Research paper (scientific journal)

Dislocation and strain engineering for SiGe buffer layers on Si

Akira Sakai, Shogo Mochizuki, Noriyuki Taoka, Osamu Nakatsuka, Shingo Takeda, Shigeru Kimura, Masaki Ogawa, Shigeaki Zaima

Proceedings - Electrochemical Society　Vol. PV 2005-10　p. 16-29　2005　Research paper (international conference proceedings)

Analysis of stressed-gate SiO2 films with electron injection by conductive atomic force microscopy

A Seko, Y Watanabe, H Kondo, A Sakai, S Zaima, Y Yasuda

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS　Vol. 88　No. 6　p. 18-26　2005　Research paper (scientific journal)

Synthesis of carbon nanotube peapods directly on Si substrates

Y Ohno, Y Kurokawa, S Kishimoto, T Mizutani, T Shimada, M Ishida, T Okazaki, H Shinohara, Y Murakami, S Maruyama, A Sakai, K Hiraga

APPLIED PHYSICS LETTERS　Vol. 86　No. 2　p. 023109-1-023109-3　2005/01　Research paper (scientific journal)

Control of Ni/Si interfacial reaction and NiSi technology for ULSI applications

S. Zaima, O. Nakatsuka, A. Sakai, Y. Yasuda

2004/12

Dislocation and strain distribution analysis for SiGe buffer layers formed on silicon on insulator substrates

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, S. Zaima, Y. Yasuda, M. Ogawa, T. Tezuka, N. Sugiyama, S. Takagi

2004/11

Dislocation Engineering for high-quality SiGe epitaxial films on Si substrates

A. Sakai, S. Zaima, Y. Yasuda

2004/11　Research paper (international conference proceedings)

HfO2 film formation combined with radical nitridation and its electrical characteristic

R Takahashi, M Sakashita, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 43　No. 11B　p. 7821-7825　2004/11　Research paper (scientific journal)

Praseodymium silicate formed by postdeposition high-temperature annealing

A Sakai, S Sakashita, M Sakashita, Y Yasuda, S Zaima, S Miyazaki

APPLIED PHYSICS LETTERS　Vol. 85　No. 22　p. 5322-5324　2004/11　Research paper (scientific journal)

Scanning tunneling microscopy observation of C adsorption behavior in the initial growth of SiGeC on Si(100)

Y. Wakazono, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, Y. Yasuda, S. Zaima

Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2004/10

Evolution of surface morphology in the initial growth of Si1-x-yGexCy layers

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, M. Ogawa, Y. Yasuda, S. Zaima

Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2004/10

Evolution of surface morphology in the initial growth of Si1-x-yGexCy layers

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, M. Ogawa, S. Zaima, Y. Yasuda

Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2004/10

Improvement in the Ni silicide/Si contact properties by C implantation

K. Okubo, O. Nakatsuka, A. Sakai, M. Ogawa, S. Zaima, J. Murota, Y. Yasuda

Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2004/10

Analysis of microstructures in strain-relaxed SiGe buffer layers on SOI substrates with pure-edge dislocation networks

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, S. Zaima, M. Ogawa, Y. Yasuda, T. Tezuka, N. Sugiyama, S. Takagi

Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2004/10

Anisotropic strain-relaxation mechanism in SiGe/Si(001) heterostructures with 60° misfit dislocations

S. Mochizuki, T. Egawa, A. Sakai, N. Taoka, O. Nakatsuka, M. Ogawa, S. Zaima, Y. Yasuda

Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2004/10

Scanning tunneling microscopy observation of C adsorption behavior in the initial growth of SiGeC on Si(001)

Y. Wakazono, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, M. Ogawa, Y. Yasuda

Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2004/10

Control of initial growth of epitaxial NiSi2 on Si(001) with C incorporation

O. Nakatsuka, E. Okada, D. Ito, A. Sakai, S. Zaima, M. Ogawa, Y. Yasuda

Third International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2004/10

Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100)

E Okada, O Nakatsuka, S Oida, A Sakai, S Zaima, Y Yasuda

APPLIED SURFACE SCIENCE　Vol. 237　No. 1-4　p. 150-155　2004/10　Research paper (scientific journal)

Growth and dislocation control of strain-relaxed SiGe buffer layers on Si(001) substrates

Y. Yasuda, A. Sakai, S. Zaima

2004/09　Research paper (other academic)

Nickel silicide technology for low resistivity contacts in ULSI devices

S. Zaima, O. Nakatsuka, A. Sakai, Y. Yasuda

2004/09　Research paper (other academic)

Fabrication of peapod FETs using peapods synthesized directly on Si substrate

Y. Kurokawa, Y. Ohno, T. Shimada, Y. Murakami, A. Sakai, M. Ishida, S. Kishimoto, T. Okazaki, S. Maruyama, H. Shinohara, T. Mizutani

Extended Abstracts of the 2004 International Conference on Solid State Device and Materials　2004/09　Research paper (international conference proceedings)

Thermal stability and electrical properties of (La2O3)1-x(Al2O3) composite films

R. Fujitsuka, M. Sakashita, A. Sakai, S. Zaima, Y. Yasuda

Extended Abstracts of the 2004 International Conference on Solid State Device and Materials　2004/09　Research paper (international conference proceedings)

Synthesis of peapods directly on substrates

Y. Ohno, Y. Kurokawa, T. Shimada, Y. Murakami, A. Sakai, K. Hiraga, M. Ishida, T. Okazaki, S. Kishimoto, S. Maruyama, H. Shinohara, T. Mizutani

2004/07

Detection and characterization of stress-induced defects in gate SiO2 films by conductive atomic force microscopy

Y Watanabe, A Seko, H Kondo, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 43　No. 7B　p. 4679-4682　2004/07　Research paper (scientific journal)

Behavior of local current leakage in stressed gate SiO2 films analyzed by conductive atomic force microscopy

A Seko, Y Watanabe, H Kondo, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 43　No. 7B　p. 4683-4686　2004/07　Research paper (scientific journal)

Nanoscale analysis of degradation phenomena in MOS gate insulators using conductive atomic force microscopy

S. Zaima, H. Kondo, M. Sakashita, A. Sakai, Y. Yasuda

2004/06

Growth of silicon nanocrystal dots with high number density by ultra-high-vacuum chemical vapor deposition

S Naito, M Satake, H Kondo, M Sakashita, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 43　No. 6B　p. 3779-3783　2004/06　Research paper (scientific journal)

Initial growth behaviors of SiGeC in SiGe and C alternate depostion

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, Y. Yasuda

Second International SiGe Technology and Device Meeting (ISTDM2004)　2004/05　Research paper (international conference proceedings)

Thickness dependence of microscopic current-voltage characteristics in stressed SiO2 films

Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, Y. Yasuda

2004/05

Growth process and energy bandgap formation of silicon nitride films in radical nitridation process

H. Kondo, K. Kawaai, A. Sakai, K. Miyazaki, S. Zaima, Y. Yasuda

2004/05

Analysis of Stressed-Gate SiO₂ Films with Electron Injection by Conductive Atomic Force Microscopy

世古明義, 渡辺行彦, 近藤博基, 酒井朗, 財満鎮明, 安田幸夫

電子情報通信学会論文誌 C　Vol. J87-C　No. 8　2004/05

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations

N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, Y. Yasuda

Vol. 8　No. 1　p. 131-135　2004/05

Initial growth behaviors of SiGeC in SiGe and C alternative deposition

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, Y. Yasuda

2004/05

The initial growth of Si1-x-yGexCy thin films with large fractions of C atoms on Si(100)

S. Zaima, A. Sakai, Y. Yasuda

2004/05

Growth of strain-relaxed SiGe buffer layers on Si(001) substrates with controlled generation and propagation of dislocations

A. Sakai, S. Zaima, Y. Yasuda

2004/04　Research paper (other academic)

Influence of structural variation of Ni silicide thin films on electrical property for contact materials

K Okubo, Y Tsuchiya, O Nakatsuka, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 43　No. 4B　p. 1896-1900　2004/04　Research paper (scientific journal)

Conductive atomic force microscopy analysis for local electrical characteristics in stressed SiO2 gate films

Y Watanabe, A Seko, H Kondo, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 43　No. 4B　p. 1843-1847　2004/04　Research paper (scientific journal)

Pulsed laser deposition and analysis for structural and electrical properties of HfO2-TiO2 composite films

K Honda, A Sakai, M Sakashita, H Ikeda, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 43　No. 4A　p. 1571-1576　2004/04　Research paper (scientific journal)

Dislocation structures and strain-relaxation in SiGe buffer layers on Si(001) substrates with an ultra-thin Ge interlayer

T Yamamoto, A Sakai, T Egawa, N Taoka, O Nakatsuka, S Zaima, Y Yasuda

APPLIED SURFACE SCIENCE　Vol. 224　No. 1-4　p. 108-112　2004/03　Research paper (scientific journal)

Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100)

S Ariyoshi, S Takeuchi, O Nakatsuka, A Sakai, S Zaima, Y Yasuda

APPLIED SURFACE SCIENCE　Vol. 224　No. 1-4　p. 117-121　2004/03　Research paper (scientific journal)

Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts

S Zaima, O Nakatsuka, A Sakai, J Murota, Y Yasuda

APPLIED SURFACE SCIENCE　Vol. 224　No. 1-4　p. 215-221　2004/03　Research paper (scientific journal)

Microscopic analysis of stress-induced leakage current in stressed gate SiO2 films using conductive atomic force microscopy

Y Watanabe, A Seko, H Kondo, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　Vol. 43　No. 2A　p. L144-L147　2004/02　Research paper (scientific journal)

GV and C-P characterization sensitivities for fast and slow-state traps in very thin oxide mosfets

JY Rosaye, Y Yasuda, A Sakai, P Mialhe, JP Charles, Y Watanabe

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS　p. 353-356　2004　Research paper (international conference proceedings)

Formation technology of Ni silicide on Si and Si_1-x-yGe_xC_y

中塚理, 酒井朗, 財満鎮明, 安田幸夫

電気学会電子材料研究会資料　Vol. EFM-04　No. 41-48　2004

Preparation and evaluation of NiGe gate electrodes for metal-oxide- semiconductor devices

Yukihiro Kaneko, Hiroki Kondo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda

Proceedings - Electrochemical Society　Vol. 7　p. 1107-1111　2004　Research paper (international conference proceedings)

Group IV semiconductor materials engineering for advanced device technology

Yukio Yasuda, Akira Sakai, Osamu Nakatsuka, Shigeaki Zaima

Proceedings - Electrochemical Society　Vol. 7　p. 555-568　2004　Research paper (international conference proceedings)

HfO2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic

Takahashi Ryoya, Sakashita Mitsuo, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

Japanese Journal of Applied Physics　Vol. 43　No. 11　p. 7821-7825　2004

Growth mechanism of epitaxial NiSi<inf>2</inf> layer in the Ni/Ti/Si(001) contact for atomically flat interfaces

Osamu Nakatsuka, Kazuya Okubo, Akira Sakai, Shigeaki Zaima, Yukio Yasuda

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004　Vol. 4　p. 143-146　2004　Research paper (international conference proceedings)

Thermal stability and electrical properties of Ni-silicide on C-incorporated Si

O Nakatsuka, K Okubo, A Sakai, M Ogawa, S Zaima, J Murota, Y Yasuda

ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004)　p. 293-298　2004　Research paper (international conference proceedings)

Growth of carbon nanotubes by microwave-excited non-equilibrium atmospheric-pressure plasma

A Matsushita, M Nagai, K Yamakawa, M Hiramatsu, A Sakai, M Hori, T Goto, S Zaima

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 43　No. 1　p. 424-425　2004/01　Research paper (scientific journal)

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(001) substrates

T. Egawa, A. Sakai, T. Yamamoto, N. Taoka, O. Nakatsuka, S. Zaima, Y. Yasuda

Applied Surface Science　2004/01　Research paper (scientific journal)

Local discharging of carriers at nanometer scale defects in gate SiO2 thin films observed by conducting atomic force microscopy

A. Seko, Y. Watanabe, H. Kondo, A. Sakai, S. Zaima, Y. Yasuda

2003/12

Detection of stress-induced defects in gate SiO2 films by conducting atomic force microscopy

Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, Y. Yasuda

2003/12

Nanoscale analysis of local leakage currents in stressed gate SiO2 films by conducting atomic force microscopy

H. Kondo, A. Seko, Y. Watanabe, A. Sakai, S. Zaima, Y. Yasuda

2003/12

Praseodymium silicate formation by post-growth high temperature annealing

A. Sakai, S. Sakashita, M. Sakashita, S. Zaima, Y. Yasuda, S. Miyazaki

2003/12　Research paper (other academic)

Reactive deposition epitaxy of CoSi2 films on clean and oxygen-adsorbed Si(001) surfaces

Y Hayashi, A Sakai, H Ikeda, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 42　No. 12　p. 7482-7488　2003/12　Research paper (scientific journal)

Influence of C incorporation in the initial growth of epitaxial NiSi2 on Si(100)

E. Okada, S. Oida, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda

Program and Abstracts of The 7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures　2003/11　Research paper (international conference proceedings)

Low temperature formation of epitaxial NiSi2 in Ni/Ti/Si(100) system

O. Nakatsuka, K. Okubo, Y. Tsuchiya, A. Sakai, S. Zaima, Y. Yasuda

Advanced Metallization Conference 2003: Asian Session　2003/10　Research paper (international conference proceedings)

Chemical structures of HfO2/Si interfacial transition layer

H. Nohira, Y. Tanaka, K. Kobayashi, M. B. Seman, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, Y. Sugita, O. Nakatsuka, A. Sakai, S. Zaima, T. Ishikawa, S. Shin, T. Hattori

Extended Abstracts of the 2003 International Conference on Solid State Device and Materials　2003/09　Research paper (international conference proceedings)

Influence of structural variation of Ni silicide thin films on electrical property for contact materials

K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda

Extended Abstracts of the 2003 International Conference on Solid State Device and Materials　Vol. 43　No. 4　p. 1896-1900　2003/09　Research paper (international conference proceedings)

Conductive atomic force microscopy analysis for local electrical characteristics in stressed SiO2 gate films

Y. Watanabe, A. Seko, H. Kondo, A. Sakai, S. Zaima, Y. Yasuda

Extended Abstracts of the 2003 International Conference on Solid State Device and Materials　Vol. 43　No. 4　p. 1843-1847　2003/09　Research paper (international conference proceedings)

High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems

K Kobayashi, M Yabashi, Y Takata, T Tokushima, S Shin, K Tamasaku, D Miwa, T Ishikawa, H Nohira, T Hattori, Y Sugita, O Nakatsuka, A Sakai, S Zaima

APPLIED PHYSICS LETTERS　Vol. 83　No. 5　p. 1005-1007　2003/08　Research paper (scientific journal)

Analysis of Stressed-Gate SiO_2 Films with Electron Injection by Conducting Atomic Force Microscopy : Microscopic observation for Degradation Mechanism of Gate SiO_2 Films

SEKO Akiyoshi, WATANABE Yukihiko, KONDO Hiroki, SAKAI Akira, ZAIMA Shigeaki, YASUDA Yukio

Technical report of IEICE. SDM　Vol. 103　No. 148　p. 1-6　2003/06/26

Effect of Al interlayers on two-step epitaxial growth of CoSi2 on Si(100)

O Nakatsuka, H Onoda, E Okada, H Ikeda, A Sakai, S Zaima, Y Yasuda

APPLIED SURFACE SCIENCE　Vol. 216　No. 1-4　p. 174-180　2003/06　Research paper (scientific journal)

Solid phase growth of nickel silicide for low resistance contacts in Si and SiGe(C) devices

S. Zaima, Y. Tsuchiya, K. Okubo, O. Nakatsuka, A. Sakai, J. Murota, Y. Yasuda

3rd International SiGe(C) Epitaxy and Heterostructures Conference　2003/05

Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen

R Takahashi, Y Kobayashi, H Ikeda, M Sakashita, O Nakatsuka, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 42　No. 4B　p. 1966-1970　2003/04　Research paper (scientific journal)

Novel nonvolatile random-access memory with Si nanocrystals for ultralow-power scheme

A Shibata, H Kotaki, T Ogura, N Arai, K Adachi, A Kito, S Kakimoto, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 42　No. 4B　p. 2387-2390　2003/04　Research paper (scientific journal)

Influence of additional metals on Ni/Si interfacial reactions and resultant nano-structures studied by HRTEM, EELS and EDX

Sugie Tsukasa, Yamasaki Jun, Tanaka Nobuo, Nakatsuka Osamu, Ohkubo Kazuya, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

Meeting Abstracts of the Physical Society of Japan　Vol. 58　No. 0　p. 874-874　2003

Growth of silicon nanocrystals with high number density for floating dot memory

S. Naito, M. Satake, H. Kondo, M. Sakashita, A. Sakai, S. Zaima, Y. Yasuda

Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003　p. 20-21　2003　Research paper (international conference proceedings)

HRTEM and EELS analysis of interfacial reactions in Ti/Si <inf>1-x</inf>Ge<inf>x</inf>/Si(100)

J. Yamasaki, N. Tanaka, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda

Microscopy and Microanalysis　Vol. 9　No. SUPPL. 2　p. 470-471　2003　Research paper (international conference proceedings)

Influence of Si1-xGex interlayers on the initial growth of SiGeC on Si(100)

S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda

First International SiGe Technology and Device Meeting (ISTDM2003)　2003/01　Research paper (international conference proceedings)

Influence of SiGe interlayer on the initial growth of Si1-x-yGexCy on Si(100)

S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda

First International SiGe Technology and Device Meeting　2003/01　Research paper (international conference proceedings)

Dislocation structures and strain-relaxation in SiGe buffer layers on Si (001) with thin Ge interlayer

T. Yamamoto, T. Egawa, N. Taoka, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda

First International SiGe Technology and Device Meeting　2003/01　Research paper (international conference proceedings)

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(001)

T. Egawa, T. Yamamoto, N. Taoka, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda

First International SiGe Technology and Device Meeting　2003/01　Research paper (international conference proceedings)

Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe contacts

S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, Y. Yasuda

First International SiGe Technology and Device Meeting　2003/01　Research paper (international conference proceedings)

Non-stoichiometric phase and superlattice in InSb as observed by in situ heating inside an electron microscope

A. Sakai, T. Kamino, H. Saka, T. Imura

2003/01

Atomistic characterization of radical nitridation process on Si(100) surfaces

Y. Yasuda, A. Sakai, S. Zaima

Proceedings of the International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films VII, Electrochemical Society Proceedings　2003/01　Research paper (international conference proceedings)

Surface and interface smoothing and growth mechanism of epitaxial CoSi2 films by solid-phase epitaxy using adsorbed oxygen layers and the applied two-step growth on Si(001) surfaces

Y. Hayashi, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Japanese Journal of Applied Physics　2003/01　Research paper (scientific journal)

Control in the initial growth stage of heteroepitaxial Si1-x-yGexCy on Si(001) substrates

S. Zaima, A. Sakai, Y. Yasuda

Applied Surface Science　2003/01　Research paper (scientific journal)

Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme

Shibata Akihide, Yasuda Yukio, Kotaki Hiroshi, Ogura Takayuki, Arai Nobutoshi, Adachi Kouichiro, Kito Atsunori, Kakimoto Seizo, Sakai Akira, Zaima Shigeaki

Japanese Journal of Applied Physics　Vol. 42　No. 4　p. 2387-2390　2003　Research paper (international conference proceedings)

Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen

Takahashi Ryoya, Kobayashi Yasushi, Ikeda Hiroya, Sakashita Mitsuo, Nakatsuka Osamu, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

Japanese Journal of Applied Physics　Vol. 42　No. 4　p. 1966-1970　2003　Research paper (international conference proceedings)

Local Leakage Current of HfO2 Thin Films Characterized by Conducting Atomic Force Microscopy

Ikeda Hiroya, Goto Tomokazu, Sakashita Mitsuo, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

Japanese Journal of Applied Physics　Vol. 42　No. 4　p. 1949-1953　2003　Research paper (international conference proceedings)

Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals

S Naito, M Okada, O Nakatsuka, T Okuhara, A Sakai, S Zaima, Y Yasuda

RAPID THERMAL PROCESSING FOR FUTURE SEMICONDUCTOR DEVICES　p. 29-35　2003　Research paper (international conference proceedings)

Low resistance contact with NiSi for sub-0.1 um Si ULSI devices

O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, Y. Yasuda

2002/10　Research paper (other academic)

Epitaxial growth of CoSi2 films on oxygen-adsorbed Si(100) surfaces

Y. Hayashi, A. Sakai, O. Nakatsuka, S. Zaima, Y. Yasuda

Fourth International Symposium on Control of Semiconductor Interfaces　2002/10

Effect of Al interlayer on two-Step growth of CoSi2 on Si(100)

E. Okada, H. Onoda, O. Nakatsuka, H. Ikeda, M. Sakashita, A. Sakai, S. Zaima, Y. Yasuda

Fourth International Symposium on Control of Semiconductor Interfaces, Karuizawa　2002/10

Initial growth process of TiN films in ultra-high vacuum rapid thermal chemical vapor deposition

Y. Okuda, S. Naito, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, Y. Yasuda

Advanced Metallization Conference 2002: 12th Asian Session　2002/10

Structural and electrical properties of HfO2-TiO2 composite films formed by pulsed laser deposition

K. Honda, S. Goto, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Extended Abstracts of the 2002 International Conference on Solid State Device and Materials　2002/09　Research paper (international conference proceedings)

Influence of Ge and C for reaction in Ni/p+-Si1-x-yGexCy/Si(100) contacts

Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, J. Murota, Y. Yasuda

Extended Abstracts of the 2002 International Conference on Solid State Device and Materials　2002/09　Research paper (international conference proceedings)

Control in the initial growth of heteroepitaxial Si1-x-yGexCy on Si(100) substrates

S. Zaima, A. Sakai, Y. Yasuda

2002/07　Research paper (international conference proceedings)

190. Surface smoothing of strain-relaxed SiGe layers on Si substrates in two-step strain relaxation procedure

T. Egawa, T. Yamamoto, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2002/06

Control of residual strain in SiGe buffer layers on Si substrates with ultra-thin Ge interlayers

T. Yamamoto, T. Egawa, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2002/06

Effect of Ge on solid phase epitaxy of CoSi2 on Si(100)

O. Nakatsuka, H. Onoda, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Second International WorkShop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2002/06

Structural and electrical properties in Ni/Si(100) contacts

Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, Y. Yasuda

Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2002/06

Formation mechanism of low resistance contact in NiSi/Si system Ni/Si

O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, Y. Yasuda

Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2002/06

Novel growth method of thin strain-relaxed SiGe films on Si substrates

A. Sakai, K. Sugimoto, T. Yamamoto, M. Okada, H. Ikeda, O. Nakatsuka, S. Zaima, Y. Yasuda

Second International Workshop on New Group IV (Si-Ge-C) Semiconductors Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices　2002/06

Characterization of defect traps in SiO2 thin films influence of temperature on defects

JY Rosaye, N Kurumado, M Sakashita, H Ikeda, A Sakai, P Mialhe, JP Charles, S Zaima, Y Yasuda, Y Watanabe

MICROELECTRONICS JOURNAL　Vol. 33　No. 5-6　p. 429-436　2002/05　Research paper (scientific journal)

Electrical properties and solid-phase reactions in Ni/Si(100) contacts

Y Tsuchiya, A Tobioka, O Nakatsuka, H Ikeda, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 41　No. 4B　p. 2450-2454　2002/04　Research paper (scientific journal)

Growth processes and electrical characteristics of silicon nitride films formed on Si(100) by radical nitrogen

H Ikeda, D Matsushita, S Naito, K Ohmori, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 41　No. 4B　p. 2463-2467　2002/04　Research paper (scientific journal)

Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition

H Ikeda, S Goto, K Honda, M Sakashita, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 41　No. 4B　p. 2476-2479　2002/04

Study on solid-phase reactions in Ti/p(+)-Si1-x-yGexCy/Si(100) contacts

A Tobioka, Y Tsuchiya, H Ikeda, A Sakai, S Zaima, J Murota, Y Yasuda

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY　Vol. 89　No. 1-3　p. 373-377　2002/02　Research paper (scientific journal)

Improvement in morphology of nickel silicide film with carbon

O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, J. Murota, Y. Yasuda

Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002　p. 71-72　2002　Research paper (international conference proceedings)

Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen.

Ikeda Hiroya, Matsushita Daisuke, Naito Shinya, Ohmori Kenji, Sakai Akira, Zaima Shigeaki, Yasuda Yukio

Japanese Journal of Applied Physics　Vol. 41　No. 4　p. 2463-2467　2002　Research paper (international conference proceedings)

Growth of SiGe layers with low threading dislocation density on Si(001) substrates using a two-step strain relaxation procedure

A. Sakai, S. Zaima, Y. Yasuda

Proceedings of the Sixth China-Japan Symposium on Thin Films　2001/11　Research paper (other academic)

Atomistic observation of SiGeC thin film growth on Si(001) surfaces

Y. Yasuda, S. Zaima, A. Sakai

Proceedings of the Sixth China-Japan Symposium on Thin Films　2001/11　Research paper (other academic)

Effect of rapid thermal annealing on structural and electrical properties of HfO2 films formed by pulsed laser deposition

K. Honda, S. Goto, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices　2001/11　Research paper (international conference proceedings)

Local electrical characteristics of ultra-thin SiO2 films formed on Si(001) surfaces

H Ikeda, N Kurumado, K Ohmori, M Sakashita, A Sakai, S Zaima, Y Yasuda

SURFACE SCIENCE　Vol. 493　No. 1-3　p. 653-658　2001/11　Research paper (scientific journal)

Atomistic evolution of Si1-x-yGexCy thin films on Si(001) surfaces

A Sakai, Y Torige, M Okada, H Ikeda, Y Yasuda, S Zaima

APPLIED PHYSICS LETTERS　Vol. 79　No. 20　p. 3242-3244　2001/11　Research paper (scientific journal)

Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain-relaxation procedure

A Sakai, K Sugimoto, T Yamamoto, M Okada, H Ikeda, Y Yasuda, S Zaima

APPLIED PHYSICS LETTERS　Vol. 79　No. 21　p. 3398-3400　2001/11　Research paper (scientific journal)

Dislocations and microstructure evolution in semiconductor thin films

A. Sakai

International Conference on Solid Surfaces, San Francisco　2001/10

Structural relaxation at SiO2/Si(100) interfaces studied by coaxial impact collision ion scattering spectroscopy

H. Ikeda, M. Wasekura, A. Sakai, S. Zaima, Y. Yasuda

Abstracts of IUVSTA 15th International Vacuum Congress, AVS 48th International Symposium, 11th International Conference on Solid Surfaces, San Francisco　2001/10

Formation of TiN films by ultra-high vacuum rapid thermal chemical vapor deposition

S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, Y. Yasuda

2001/10　Research paper (international conference proceedings)

Study on solid phase Reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts

A. Tobioka, Y. Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Advanced Metallization Conference 2001: Asian Session　2001/10　Research paper (international conference proceedings)

Electrical properties and solid-phase reactions in Ni/Si(100) contacts

Y. Tsuchiya, A. Tobioka, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Extended Abstracts of the 2001 International conference on Solid State Devices and Materials　Vol. 41　No. 4　p. 2450-2454　2001/09　Research paper (international conference proceedings)

Structural and electronic properties of metal-silicide/silicon interfaces: A first-principles study

BD Yu, Y Miyamoto, O Sugino, A Sakai, T Sasaki, T Ohno

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B　Vol. 19　No. 4　p. 1180-1185　2001/07　Research paper (scientific journal)

Formation of strain-relaxed SiGe films on Si substrates with cap layers

K. Sugimoto, T. Yamamoto, M. Okada, H. Ikeda, A. Sakai, Y. Yasuda, S. Zaima

European Materials Research Society 2001 Spring Meeting E-MRS 2001 (Second International Conference on Silicon Epitaxy and Heterostructures　2001/06

Study on solid-phase reaction in Ti/p+-Si1-x-yGexCy/Si(100) contacts

A. Tobioka, Y. Tsuchiya, H. Ikeda, A. Sakai, Y. Yasuda, S. Zaima, J. Murota

European Materials Research Society 2001 Spring Meeting E-MRS 2001 (Second International Conference on Silicon Epitaxy and Heterostructures　2001/06

STM study of the initial growth process of SiGeC films on Si(100) surfaces

Y .Torige, M. Okada, H. Ikeda, A. Sakai, Y. Yasuda, S. Zaima

European Materials Research Society 2001 Spring Meeting E-MRS 2001 (Second International Conference on Silicon Epitaxy and Heterostructures　2001/06

Microscopic observation of X-ray irradiation damage in ultra-thin SiO2 films

K Ohmori, T Goto, H Ikeda, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 40　No. 4B　p. 2823-2826　2001/04　Research paper (scientific journal)

Atomic-scale characterization of nitridation processes on Si(100)-2 x 1 surfaces by radical nitrogen

D Matsushita, H Ikeda, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 40　No. 4B　p. 2827-2829　2001/04　Research paper (scientific journal)

Local electrical properties of HfO<inf>2</inf> thin films measured by conducting atomic force microscopy

T. Goto, S. Sakashita, H. Ikeda, M. Sakashita, A. Sakai, S. Zaima, Y. Yasuda

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001　p. 180-183　2001　Research paper (international conference proceedings)

Electrical properties of Ni silicide/silicon contact

Yoshinori Tsuchiya, Osamu Nakatsuka, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda

Advanced Metallization Conference (AMC)　p. 679-684　2001　Research paper (international conference proceedings)

Epitaxial lateral overgrowth of GaN

A Usui, A Sakai

ADVANCES IN CRYSTAL GROWTH RESEARCH　p. 191-209　2001　Research paper (international conference proceedings)

選択横方向エピタキシャル成長により形成したGaN膜中の転位構造

酒井朗

まてりあ　Vol. 40　No. 12　2001/01

Scanning tunneling microscopy study of Ge epitaxy on C-adsorbed Si(100) surfaces

Y. Torige, M. Okada, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

2001/01

Solid-phase reactions of a Ti/Si1-xGex/Si(100) system

A. Tobioka, A. Yamanaka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

First International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices　2001/01

Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy

Y Hayashi, T Katoh, H Ikeda, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 40　No. 1　p. 269-275　2001/01　Research paper (scientific journal)

Structural and Electrical Characteristics of HfO₂ Films Fabricated by Pulsed Laser Deposition.

池田浩也, 後藤覚, 本多一隆, 坂下満男, 酒井朗, 財満鎮明, 安田幸夫

電子情報通信学会技術研究報告　Vol. 101　No. 108(SDM2001 53-58)　p. 25-29　2001/01

Electrical properties of Ni silicide/silicon contact

Y Tsuchiya, O Nakatsuka, H Ikeda, A Sakai, S Zaima, Y Yasuda

ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001)　p. 679-684　2001　Research paper (international conference proceedings)

Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces: Comparative study using reactive deposition epitaxy

Y Hayashi, T Katoh, H Ikeda, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 40　No. 1　p. 269-275　2001/01　Research paper (scientific journal)

Real-time observation of initial oxidation on highly B-doped Si(100)-2x1 surfaces using scanning tunneling microscopy

K Ohmori, M Tsukakoshi, H Ikeda, A Sakai, S Zaima, Y Yasuda

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II　Vol. 87　p. 329-330　2001　Research paper (international conference proceedings)

Characterization of defect traps in SiO<inf>2</inf> thin films

Jean Yves Rosaye, Pierre Mialhe, Jean Pierre Charles, Mitsuo Sakashita, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda

Active and Passive Electronic Components　Vol. 24　No. 3　p. 169-175　2001　Research paper (scientific journal)

Real-time observation of initial oxidation on highly B-doped Si(100)-2x1 surfaces using scanning tunneling microscopy

K Ohmori, M Tsukakoshi, H Ikeda, A Sakai, S Zaima, Y Yasuda

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II　Vol. 87　p. 329-330　2001　Research paper (international conference proceedings)

Control of crystal structure and ferroelectric properties of Pb(ZrxTi1-x)O-3 films formed by pulsed laser deposition

H Fujita, S Goto, M Sakashita, H Ikeda, A Sakai, S Zaima, Y Yasuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS　Vol. 39　No. 12B　p. 7035-7039　2000/12　Research paper (scientific journal)

Effects of Sb and O atoms on epitaxial growth of CoSi2(100) films on Si(100) surfaces

H. Onoda, Y. Hayashi, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

2000/11

Nucleation and growth of Ge on Si(111) in solid phase epitaxy

M. Okada, I. Suzumura, Y. Torige, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

2000/11

Study on nitridation process of Si(100) surfaces using scanning tunneling microscopy

D. Matsushita, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

2000/11

Hydrogen effects on initial oxidation processes of Si surfaces and relaxation in SiO2 local bonding structures

H. Ikeda, K. Sato, A. Sakai, S. Zaima, Y. Yasuda

2000/11

Local electrical characteristics of ultra-thin SiO2 films formed on Si(100) surfaces

H. Ikeda, N. Kurumado, K. Ohmori, M. Sakashita, A. Sakai, S. Zaima, Y. Yasuda

2000/11

Characterization of defect traps in SiO2 films

J. -Y. Rosaye, N. Kurumado, M. Sakashita, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

2000/11

Studies on electrical characteristics and solid-phase reactions at metal/silicon interfaces for low-resistivity contacts

S. Zaima, H. Ikeda, A. Sakai, Y. Yasuda

2000/11

Solid-phase reactions of a Ti/Si1-xGex/Si(100) system

A. Tobioka, A. Yamanaka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

2000/10　Research paper (other academic)

Effect of Sb atoms on epitaxial growth of CoSi2(100) films on Si(100) surfaces

H. Onoda, Y. Hayashi, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

2000/10　Research paper (international conference proceedings)

Coulomb blockade phenomena in Si MOSFETs with nano-scale channels fabricated by focused-ion beam implantation.

安田幸夫, 泉川健太, 酒井朗, 財満鎮明

電子情報通信学会技術研究報告　Vol. 99　No. 615(ED99 290-305)　2000/09

Atomic scale characterization of nitridation process on Si(100)-2x1 surfaces by radical nitrogen

D. Matsushita, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials　2000/09　Research paper (international conference proceedings)

Microscopic observation of X-ray irradiation damages in ultra-thin SiO2 films

K. Ohmori, T. Goto, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials　2000/09　Research paper (international conference proceedings)

Nucleation and growth of Ge on Si(111) in solid phase epitaxy

Suzumura, I, M Okada, A Muto, Y Torige, H Ikeda, A Sakai, S Zaima, Y Yasuda

THIN SOLID FILMS　Vol. 369　No. 1-2　p. 116-120　2000/07　Research paper (scientific journal)

Dependence of contact resistivity on impurity concentration in Co/Si systems

Osamu Nakatsuka, Tetsuo Ashizawa, Kenri Nakai, Akihiro Tobioka, Akira Sakai, Shigeaki Zaima, Yukio Yasuda

Applied Surface Science　Vol. 159　p. 149-153　2000/06　Research paper (scientific journal)

Study on initial oxidation of Si(100)-2×1 surfaces by coaxial impact collision ion scattering spectroscopy

M. Wasekura, M. Higashi, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Applied Surface Science　Vol. 159　p. 35-40　2000/06　Research paper (scientific journal)

Dependence of contact resistivity on impurity concentration in Co/Si systems

O Nakatsuka, T Ashizawa, K Nakai, A Tobioka, A Sakai, S Zaima, Y Yasuda

APPLIED SURFACE SCIENCE　Vol. 159　p. 149-153　2000/06　Research paper (scientific journal)

Orientation dependence of ferroelectric properties of Pb(Zr<inf>x</inf>Ti<inf>1-x</inf>)O<inf>3</inf> thin films on Pt/SiO<inf>2</inf>/Si substrates

Hirotake Fujita, Mitsunori Imade, Mitsuo Sakashita, Akira Sakai, Shigeaki Zaima, Yukio Yasuda

Applied Surface Science　Vol. 159　p. 134-137　2000/06　Research paper (scientific journal)

Study on initial oxidation of Si(100)-2×1 surfaces by coaxial impact collision ion scattering spectroscopy

M. Wasekura, M. Higashi, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Applied Surface Science　Vol. 159　p. 35-40　2000/06　Research paper (scientific journal)

Control of crystalline structure and ferroelectric properties of Pb(ZrxTi1-x)O-3 films by pulsed laser deposition

H Fujita, S Goto, S Agata, M Sakashita, A Sakai, S Zaima, Y Yasuda

MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS　p. 276-277　2000　Research paper (international conference proceedings)

Control of crystalline structure and ferroelectric properties of Pb(ZrxTi1-x)O-3 films by pulsed laser deposition

H Fujita, S Goto, S Agata, M Sakashita, A Sakai, S Zaima, Y Yasuda

MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS　p. 276-277　2000　Research paper (international conference proceedings)

The origin and the creation mechanism of positive charges in silicon oxide films

K Ohmori, H Ikeda, A Sakai, S Zaima, Y Yasuda

PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4　Vol. 2000　No. 2　p. 345-352　2000　Research paper (international conference proceedings)

集束イオンビームを用いたナノチャネルMOSFETの作製とクーロンブロッケード現象

安田幸夫, 泉川健太, 酒井朗, 財満鎭明

電子情報通信学会信学技報　Vol. 99　No. 617　p. 7-11　2000/01　Research paper (scientific journal)

Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2x1 surfaces

D. Matsushita, H. Ikeda, A. Sakai, S. Zaima, Y. Yasuda

Thin Solid Films　2000/01　Research paper (scientific journal)

Dislocation propagation in GaN films formed by epitaxial lateral overgrowth

A Sakai, H Sunakawa, A Kimura, A Usui

JOURNAL OF ELECTRON MICROSCOPY　Vol. 49　No. 2　p. 323-330　2000　Research paper (scientific journal)

Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth

A Sakai, H Sunakawa, A Kimura, A Usui

APPLIED PHYSICS LETTERS　Vol. 76　No. 4　p. 442-444　2000/01　Research paper (scientific journal)

Epitaxial lateral overgrowth of GaN and GaN based light emitting devices

A. Sakai

1999/12　Research paper (other academic)

Nanometer-scale imaging of strain in Ge island on Si(001) surface

T Ide, A Sakai, K Shimizu

THIN SOLID FILMS　Vol. 357　No. 1　p. 22-25　1999/12　Research paper (scientific journal)

Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: Design, fabrication, lasing characteristics, and spontaneous emission factor

M Fujita, A Sakai, T Baba

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS　Vol. 5　No. 3　p. 673-681　1999/05　Research paper (scientific journal)

Dimer reconstruction at metal-silicide/silicon interfaces: A first-principles study

BD Yu, Y Miyamoto, O Sugino, A Sakai, T Sasaki, T Ohno

ADVANCED INTERCONNECTS AND CONTACTS　Vol. 564　p. 103-108　1999　Research paper (international conference proceedings)

Reduction of dislocation density in GaN films by epitaxial lateral overgrowth.

酒井朗, 碓井彰

応用物理　Vol. 68　No. 7　p. 774-779　1999/01

Semiconductor nano-technology by electron microscopy. Dislocation structure in laterally overgrown GaN films.

酒井朗

電子顕微鏡　Vol. 34　No. 3　p. 197-199　1999/01

Nanometer-scale imaging of lattice deformation with transmission electron micrograph

T Ide, A Sakai, K Shimizu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　Vol. 37　No. 12B　p. L1546-L1548　1998/12　Research paper (scientific journal)

Nanometer-scale imaging of strain in Ge island on Si(001) surface

T. Ide, A. Sakai, K. Shimizu

Vol. 357　No. 2　p. 22-25　1998/11　Research paper (other academic)

Defect morphology and structure in GaN films formed by epitaxial lateral overgrowth

A. Sakai, H. Sunakawa, A. Kimura, A. Usui

1998/11　Research paper (other academic)

Defect structure in selectively grown GaN films with low threading dislocation density

A. Sakai, H. Sunakawa, A. Usui

Applied Physics Letters　1998/08　Research paper (scientific journal)

Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth

A Sakai, H Sunakawa, A Usui

APPLIED PHYSICS LETTERS　Vol. 73　No. 4　p. 481-483　1998/07　Research paper (scientific journal)

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

C Sasaoka, H Sunakawa, A Kimura, M Nido, A Usui, A Sakai

JOURNAL OF CRYSTAL GROWTH　Vol. 189　p. 61-66　1998/06　Research paper (scientific journal)

Growth of strain-relaxed Ge films on Si(001) surfaces

A. Sakai, T. Tatsumi, K. Aoyama

Applied Physics Letters　1998/06　Research paper (scientific journal)

Crystal Growth of III-Group Nitride-Semiconductors. Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy and Metalorganic Vapor Phase Epitaxy.

笹岡千秋, 砂川晴夫, 木村明隆, 碓井彰, 酒井朗

日本結晶成長学会誌　Vol. 25　No. 2　1998/01

Ge/Si系の成長と歪緩和のメカニズム

酒井朗

日本結晶成長学会誌　1998/01

Valence band splitting of GaN assessed by peculiar strain distribution in HVPE-ELO films

AA Yamaguchi, K Kobayashi, A Sakai, Y Mochizuki, H Sunakawa, A Usui

BLUE LASER AND LIGHT EMITTING DIODES II　p. 692-695　1998　Research paper (international conference proceedings)

Recent progress in epitaxial lateral overgrowth technique for growing bulk GaN by HVPE

A Usui, H Sunakawa, N Kuroda, A Kimura, A Sakai, AA Yamaguchi

BLUE LASER AND LIGHT EMITTING DIODES II　p. 17-21　1998　Research paper (international conference proceedings)

Wide GaN stripes by lateral growth Zn metalorganic vapor phase epitaxy

A Kimura, C Sasaoka, A Sakai, A Usui

NITRIDE SEMICONDUCTORS　Vol. 482　p. 119-124　1998　Research paper (international conference proceedings)

Microstructure of GaN films on GaAs(1 0 0) substrates grown by hydride vapor-phase epitaxy

A Sakai, A Kimura, H Sunakawa, A Usui

JOURNAL OF CRYSTAL GROWTH　Vol. 183　No. 1-2　p. 49-61　1998/01　Research paper (scientific journal)

Reduction of threading dislocation density in GaN films by selective epitaxy.

酒井朗, 砂川晴夫, 木村明隆, 碓井彰

応用物理学会学術講演会講演予稿集　Vol. 58th　No. 1　1997/12

Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy

A Usui, H Sunakawa, A Sakai, AA Yamaguchi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　Vol. 36　No. 7B　p. L899-L902　1997/07　Research paper (scientific journal)

Growth of strain-relaxed pure Ge films on Si(001)

A. Sakai, T. Tatsumi, N. Ikarashi, T. Niino

1997/03　Research paper (other academic)

High quality InGaN MQW on low dislocation density GaN substrate grown by hydride vapor phase epitaxy

C. Sasaoka, H. Sunakawa, A. Kimura, M. Nido, A. Usui, A. Sakai

Proceedings of the Second International Conference on Nitride Semiconductors　1997/01　Research paper (international conference proceedings)

Surface morphology study for hexagonal GaN grown on GaAs(100) substrates by hydride vapor phase epitaxy

A Kimura, AA Yamaguchi, A Sakai, H Sunakawa, M Nido, A Usui

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS　Vol. 35　No. 11B　p. L1480-L1482　1996/11　Research paper (scientific journal)

Single domain hexagonal GaN films on GaAs(100) vicinal substrates grown by hydride vapor phase epitaxy

AA Yamaguchi, T Manako, A Sakai, H Sunakawa, A Kimura, M Nido, A Usui

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　Vol. 35　No. 7B　p. L873-L875　1996/07　Research paper (scientific journal)

Hexagonal GaN films grown on GaAs(100) substrates by hydride vapor phase epitaxy

AA Yamaguchi, T Manako, A Sakai, H Sunakawa, A Kimura, M Nido, A Usui

BLUE LASER AND LIGHT EMITTING DIODES　p. 206-209　1996　Research paper (international conference proceedings)

AN ADVANCED TECHNIQUE FOR FABRICATING HEMISPHERICAL-GRAINED (HSG) SILICON STORAGE ELECTRODES

H WATANABE, T TATSUMI, T IKARASHI, A SAKAI, N AOTO, T KIKKAWA

IEEE TRANSACTIONS ON ELECTRON DEVICES　Vol. 42　No. 2　p. 295-300　1995/02　Research paper (scientific journal)

Role of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surface

Nobuyuki Ikarashi, Atsushi Oshiyama, Akira Sakai, Toru Tatsumi

Physical Review B　Vol. 51　No. 20　p. 14786-14789　1995　Research paper (scientific journal)

Effect of adsorbed hydrogen on low-temperature epitaxial growth in ultra-high. Vacuum chemical-vapor-deposition.

辰巳徹, 酒井朗, 宮永恵子

応用物理　Vol. 64　No. 11　p. 1129-1132　1995/01

Ge growth on Si: islanding phenomena and layer-by-layer growth mediated by hydrogen surfactant

A. Sakai, T. Tatsumi

1994/08　Research paper (international conference proceedings)

Ge growth on Si using atomic hydrogen as a surfactant

Akira Sakai, Toru Tatsumi

Applied Physics Letters　Vol. 64　No. 1　p. 52-54　1994　Research paper (scientific journal)

DEFECT AND ISLAND FORMATION IN STRANSKI-KRASTANOV GROWTH OF GE ON SI(001)

A SAKAI, T TATSUMI

MECHANISMS OF THIN FILM EVOLUTION　Vol. 317　p. 343-348　1994　Research paper (international conference proceedings)

Ultrathin Tantalum Oxide Capacitor Process Using Oxygen-Plasma Annealing

Hiroshi Suzuki, Satoshi Kamiyama, Hirohito Watanabe, Hidekazu Kimura, Jun'ichiro Mizuki, Akira Sakai

Journal of the Electrochemical Society　Vol. 141　No. 5　p. 1246-1251　1994　Research paper (scientific journal)

DEFECT-MEDIATED ISLAND FORMATION IN STRANSKI-KRASTANOV GROWTH OF GE ON SI(001)

A SAKAI, T TATSUMI

PHYSICAL REVIEW LETTERS　Vol. 71　No. 24　p. 4007-4010　1993/12　Research paper (scientific journal)

Ultra-Thin Ta₂O₅ Capacitor Process Technology by using O₂-Plasma Annealing.

鈴木博, 神山聡, 酒井朗, 渡辺啓仁, 石谷明彦

応用物理学会学術講演会講演予稿集　Vol. 54th　No. 2　1993/09

Growth kinetics of Si hemispherical grains on clean amorphous-Si surfaces

Akira Sakai, Toru Tatsumi, Koichi Ishida

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films　Vol. 11　No. 6　p. 2950-2953　1993　Research paper (scientific journal)

Prevention of crystallization by surfactants during Si molecular-beam deposition on amorphous-Si films

Akira Sakai, Toru Tatsumi, Koichi Ishida

Physical Review B　Vol. 47　No. 11　p. 6803-6806　1993　Research paper (scientific journal)

Ultra-thin TiN/Ta2O5/W capacitor technology for 1Gbit DRAM

S. Kamiyama, H. Suzuki, H. Watanabe, A. Sakai, M. Oshida, T. Tatsumi, T. Tanigawa, A. Ishitani

IEDM, Tech. Dig.　1993/01　Research paper (international conference proceedings)

Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition

Satoshi Kamiyama, Hiroshi Suzuki, Akihiko Ishitani, Akira Sakai

Journal of the Electrochemical Society　Vol. 140　No. 6　p. 1617-1625　1993　Research paper (scientific journal)

Novel seeding method for the growth of polycrystalline Si films with hemispherical grains

A. Sakai, T. Tatsumi

Applied Physics Letters　1992/04　Research paper (scientific journal)

ヘテロエピタキシャル成長における歪み緩和と貫通転位の低減－Si(001)基板上の高品質Si1-XGeX歪緩和層の成長－

酒井朗, 財満鎭明, 安田幸夫

日本結晶成長学会誌　1992/01

Growth mechanism of polycrystalline Si films with hemispherical grains.

辰巳徹, 酒井朗, 五十嵐多恵子, 渡辺啓仁

応用物理　Vol. 61　No. 11　p. 1147-1151　1992/01

Hemispherical grain silicon for high-density DRAMs

H. Watanabe, A. Sakai, T. Tatsumi, T. Niino

Solid State Technology　1992/01

CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS WITH NATIVE-OXIDE FREE SURFACES

A SAKAI, T TATSUMI, T NIINO, H ONO, K ISHIDA

DENKI KAGAKU　Vol. 59　No. 12　p. 1043-1049　1991/12　Research paper (scientific journal)

An advanced fabrication technology of hemispherical grained (HSG) poly-Si for high capacitance storage electrodes

H. Watanabe, T. Tatsumi, T. Niino, A. Sakai, S. Adachi, N. Aoto, K. Koyama, T. Kikkawa

Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials　1991/09　Research paper (international conference proceedings)

CRYSTALLIZATION OF AMORPHOUS-SILICON WITH CLEAN SURFACES

A SAKAI, H ONO, K ISHIDA, T NIINO, T TATSUMI

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　Vol. 30　No. 6A　p. L941-L943　1991/06　Research paper (scientific journal)

STRUCTURAL MODIFICATION OF A 7X7 SUPERSTRUCTURE BURIED AT THE AMORPHOUS SI/SI(111) INTERFACE DURING SOLID-PHASE EPITAXIAL-GROWTH

A SAKAI, T TATSUMI, HIROSAWA, I, H ONO, K ISHIDA

SURFACE SCIENCE　Vol. 249　No. 1-3　p. L300-L306　1991/06　Research paper (scientific journal)

DISLOCATION-RELATED PHOTOLUMINESCENCE IN SI1-XGEX/SI(100) GROWN BY MOLECULAR-BEAM EPITAXY

K TERASHIMA, M TAJIMA, A SAKAI, T TATSUMI

JOURNAL OF CRYSTAL GROWTH　Vol. 111　No. 1-4　p. 920-924　1991/05　Research paper (scientific journal)

High resolution transmission electron microscopy of semiconductor heterointerface

K. Ishida, A. Sakai, N. Ikarashi, H. Ono

NEC Res. Dev.　Vol. 32　1991/01　Research paper (scientific journal)

Crystallization of amorphous silicon with clean surfaces

Akira Sakai, Haruhiko Ono, Koichi Ishida, Taeko Niino, Torn Tatsumi

Japanese Journal of Applied Physics　Vol. 30　No. 6　p. L941-L943　1991　Research paper (scientific journal)

Dislocation-related photoluminescence in Si1-xGex/Si(100) grown by molecular beam epitaxy

K. Terashima, M. Tajima, A. Sakai, T. Tatsumi

J. Cryst. Growth　Vol. 111　1991/01　Research paper (scientific journal)

Structural modification of a 7x7 superstructure buried at the amorphous-Si/Si(111) interface during solid phase epitaxial growth

A. Sakai, T. Tatsumi, I. Hirosawa, H. Ono, K. Ishida

Surf. Sci. Lett.　Vol. 249　1991/01　Research paper (scientific journal)

HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF GAAS/ALAS HETEROINTERFACES GROWN ON THE MISORIENTED SUBSTRATE IN THE (110) PROJECTION

N IKARASHI, A SAKAI, T BABA, K ISHIDA, J MOTOHISA, H SAKAKI

APPLIED PHYSICS LETTERS　Vol. 57　No. 19　p. 1983-1985　1990/11　Research paper (scientific journal)

HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF GAAS/ALAS HETEROSTRUCTURES IN THE (110) PROJECTION

N IKARASHI, A SAKAI, T BABA, K ISHIDA, J MOTOHISA, H SAKAKI

HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN MATERIALS　Vol. 183　p. 187-192　1990　Research paper (international conference proceedings)

SI/SIOX/SI HOLE-BARRIER FABRICATION FOR BIPOLAR-TRANSISTORS USING MOLECULAR-BEAM DEPOSITION

T TATSUMI, T NIINO, A SAKAI, H HIRAYAMA, F SATO

THIN SOLID FILMS　Vol. 184　No. 1-2　p. 229-235　1990/01　Research paper (scientific journal)

DIRECT OBSERVATION OF A 7X7 SUPERSTRUCTURE BURIED AT THE AMORPHOUS-SI/SI(111) INTERFACE

A SAKAI, T TATSUMI, K ISHIDA

ATOMIC SCALE STRUCTURE OF INTERFACES　Vol. 159　p. 315-320　1990　Research paper (international conference proceedings)

Interface structure of Si/SiO2/Si formed by molecular beam deposition

A. Sakai, T. Tatsumi, H. Hirayama, K. Ishida

1990/01　Research paper (international conference proceedings)

HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF GAAS/ALAS HETEROSTRUCTURES IN THE (110) PROJECTION

N IKARASHI, A SAKAI, T BABA, K ISHIDA, J MOTOHISA, H SAKAKI

HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN MATERIALS　Vol. 183　p. 187-192　1990　Research paper (international conference proceedings)

SI/SIOX/SI HOLE-BARRIER FABRICATION FOR BIPOLAR-TRANSISTORS USING MOLECULAR-BEAM DEPOSITION

T TATSUMI, T NIINO, A SAKAI, H HIRAYAMA, F SATO

THIN SOLID FILMS　Vol. 184　p. 229-235　1990/01　Research paper (scientific journal)

Interface structural analysis of Si/SiO2/Si structure formed by molecular beam deposition for a hole-barrier in bipolar transistor

A. Sakai, T. Tatsumi, T. Niino, H. Hirayama, K. Ishida

Semiconductor Silicon 1990, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology　1990/01　Research paper (international conference proceedings)

Defect characterization and gettering effect in excimer laser gettering

Akira Sakai, Yoshio Ohshita, Akihiko Ishitani, Kazumi Takemura, Fumitoshi Toyokawa, Masao Mikami

Electronics and Communications in Japan (Part II: Electronics)　Vol. 73　No. 5　p. 91-97　1990　Research paper (scientific journal)

Characterization of interface structures formed by Si-MBE

A. Sakai

J. Electron Microscopy　Vol. 39　1990/01　Research paper (other academic)

DIRECT OBSERVATION OF A 7X7 SUPERSTRUCTURE BURIED AT THE AMORPHOUS-SI/SI(111) INTERFACE

A SAKAI, T TATSUMI, K ISHIDA

ATOMIC SCALE STRUCTURE OF INTERFACES　Vol. 159　p. 315-320　1990　Research paper (international conference proceedings)

High-resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection

Nobuyuki Ikarashi, Akira Sakai, Toshio Baba, Koichi Ishida, Junich Motohisa, Hiroyuki Sakaki

Applied Physics Letters　Vol. 57　No. 19　p. 1983-1985　1990　Research paper (scientific journal)

DIRECT OBSERVATION OF A 7X7 SUPERSTRUCTURE AT THE AMORPHOUS SI/SI(111) INTERFACE BY CROSS-SECTIONAL HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY

A SAKAI, T TATSUMI, K ISHIDA

SURFACE SCIENCE　Vol. 224　No. 1-3　p. L956-L964　1989/12　Research paper (scientific journal)

HIGH-RESOLUTION ELECTRON-MICROSCOPY OF THE GAAS/ALGAAS HETEROINTERFACE WITH (200) AND TRANSMITTED BEAMS

N IKARASHI, A SAKAI, T BABA, K ISHIDA

APPLIED PHYSICS LETTERS　Vol. 55　No. 24　p. 2509-2511　1989/12　Research paper (scientific journal)

INTERFACE ATOMIC-STRUCTURE OF SI/SIO2/SI FORMED BY MOLECULAR-BEAM DEPOSITION

A SAKAI, T TATSUMI, T NIINO, H HIRAYAMA, K ISHIDA

APPLIED PHYSICS LETTERS　Vol. 55　No. 24　p. 2500-2502　1989/12　Research paper (scientific journal)

エキシマレーザゲッタリングにおける欠陥の形成機構とゲッタリング効果

酒井朗, 竹村和美, 豊川文敏, 三上雅生, 大下祥雄, 石谷明彦

電子情報通信学会論文誌 C　Vol. J72-C-II　No. 5　p. 589-594　1989/05　Research paper (scientific journal)

Si/SiOx/Si Hole-Barrier Fabrication for Bipolar Transistors Using Molecular Beam Deposition

Toru Tatsumi, Taeko Niino, Akira Sakai, Hiroyuki Hirayama

Japanese Journal of Applied Physics　Vol. 28　No. 10 A　p. L1678-L1681　1989　Research paper (scientific journal)

Direct observation of a 7x7 superstructure at the amorphous-Si/Si(111) interface by cross-sectional high resolution transmission electron microscopy

A. Sakai, T. Tatsumi, K. Ishida

Surf. Sci.　Vol. 224　1989/01　Research paper (scientific journal)

High-resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams

Nobuyuki Ikarashi, Akira Sakai, Toshio Baba, Koichi Ishida

Applied Physics Letters　Vol. 55　No. 24　p. 2509-2511　1989　Research paper (scientific journal)

Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition

Akira Sakai, Toru Tatsumi, Taeko Niino, Hiroyuki Hirayama, Koichi Ishida

Applied Physics Letters　Vol. 55　No. 24　p. 2500-2502　1989　Research paper (scientific journal)

エキシマレーザゲッタリングにおける欠陥の形成機構とゲッタリング効果

酒井朗, 竹村和美, 豊川文敏, 三上雅生, 大下祥雄, 石谷明彦

電子情報通信学会論文誌　Vol. J72-C-II　1989/01　Research paper (scientific journal)

NATURE OF LATTICE-DEFECTS INDUCED BY EXCIMER LASER IRRADIATION FOR EXTRINSIC GETTERING

A SAKAI, H ONO, Y OHSHITA, J MATSUI

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS　Vol. 27　No. 2　p. L155-L158　1988/02　Research paper (scientific journal)

Excimer laser gettering of Si wafer

K. Takemura, F. Toyokawa, Y. Ohshita, A. Sakai, A. Ishitani, M. Mikami

NEC Research and Development　Vol. 90　1988/01　Research paper (scientific journal)

Excimer laser gettering of Si wafer

K. Takemura, F. Toyokawa, Y. Ohshita, A. Sakai, A. Ishitani, M. Mikami

NEC Res. Dev.　Vol. 90　1988/01　Research paper (scientific journal)

Nature of lattice defects induced by excimer laser irradiation for extrinsic gettering

A. Sakai, H. Ono, Y. Ohshita, J. Matsui

Jpn. J. Appl. Phys.　Vol. 27　1988/01　Research paper (scientific journal)

PREPARATION OF HIGHLY PERFECT SINGLE-CRYSTALS OF FE-3 WT-PERCENT SI

H SAKA, A SAKAI, T IMURA, S NAKATANI, S KIKUTA

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　Vol. 101　No. 1　p. 51-55　1987/05　Research paper (scientific journal)

A new gettering of Si wafer by excimer laser irradiation

F. Toyokawa, K. Takemura, Y. Ohshita, A. Sakai

J. Electrochem. Soc.　Vol. 134　1987/01　Research paper (scientific journal)

Preparation of highly perfect single crystals of Fe3 wt%Si

H. Saka, A. Sakai, T. Imura, S. Nakatani, S. Kikuta

physica status solidi (a)　Vol. 101　No. 1　p. 51-55　1987　Research paper (scientific journal)

REDUCTION OF DISLOCATION DENSITY IN SI BY THERMAL CYCLIC ANNEALING

A SAKAI, H SAKA, T IMURA

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　Vol. 97　No. 1　p. 57-63　1986/09　Research paper (scientific journal)

INSITU HREM OBSERVATION OF SOLID LIQUID INTERFACE

H SAKA, A SAKAI, T KAMINO, T IMURA

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES　Vol. 52　No. 3　p. L29-L32　1985　Research paper (scientific journal)