顔写真

PHOTO

Katayama Toshiharu
片山　俊治
Katayama Toshiharu
片山　俊治
Institute for Transdisciplinary Graduate Degree Programs, Specially Appointed Professor

Professional Memberships 1

  1. The Japan Society of Applied Physics

Papers 29

  1. Effect of ultrathin top silicon layers on the X-ray photoelectron emission from the buried oxide in silicon-on-insulator wafers

    Toshiharu Katayama, Hidekazu Yamamoto, Masahiko Ikeno, Yoji Mashiko, Satoru Kawazu, Masataka Umeno

    Japanese Journal of Applied Physics, Part 2: Letters　Vol. 38　No. 9 A/B　p. L1058-L1061　1999/09/15　Research paper (scientific journal)

    Publisher: IOP Publishing

  2. Accurate thickness determination of both thin SiO<inf>2</inf> on Si and thin Si on SiO<inf>2</inf> by angle-resolved X-ray photoelectron spectroscopy

    Toshiharu Katayama, Hidekazu Yamamoto, Masahiko Ikeno, Yoji Mashiko, Satoru Kawazu, Masataka Umeno

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 38　No. 7 B　p. 4172-4179　1999/07/15　Research paper (scientific journal)

    Publisher: IOP Publishing

  3. Elimination of X-ray photoelectron diffraction effect of Si(100) for accurate determination of SiO<inf>2</inf> overlayer thickness

    Toshiharu Katayama, Hidekazu Yamamoto, Masahiko Ikeno, Yoji Mashiko, Satoru Kawazu, Masataka Umeno

    Japanese Journal of Applied Physics, Part 2: Letters　Vol. 38　No. 7 A　p. L770-L773　1999　Research paper (scientific journal)

    Publisher: IOP Publishing

  4. Kikuchi-band analysis of X-ray photoelectron diffraction fine structure of Si(100) by precise angle-resolved X-ray photoelectron spectroscopy

    Toshiharu Katayama, Hidekazu Yamamoto, Yoji Mashiko, Hiroshi Koyama, Satoru Kawazu, Masataka Umeno

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers　Vol. 38　No. 3 A　p. 1547-1552　1999　Research paper (scientific journal)

    Publisher: IOP Publishing

  5. Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study

    Y. Tu, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, Y. Nagai

    Journal of Applied Physics　2018/10/21　Research paper (scientific journal)

  6. Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1-xO2/SiO2 high- k stacks as evidenced by atom probe tomography

    Y. Tu, B. Han, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, Y. Nagai

    Applied Physics Letters　Vol. 112　No. 3　p. 032902-032902　2018/01/15　Research paper (scientific journal)

    Publisher: American Institute of Physics Inc.

  7. Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

    Yorinobu Kunimune, Yasuhiro Shimada, Yusuke Sakurai, Masao Inoue, Akio Nishida, Bin Han, Yuan Tu, Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Fumiko Yano, Yasuyoshi Nagai, Toshiharu Katayama, Takashi Ide

    AIP ADVANCES　Vol. 6　No. 4　2016/04　Research paper (scientific journal)

  8. Analysis of Junction Leakage Current Failure of Nickel Silicide Abnormal Growth Using Advanced Transmission Electron Microscopy

    Shuichi Kudo, Yukinori Hirose, Tadashi Yamaguchi, Keiichiro Kashihara, Kazuyoshi Maekawa, Koyu Asai, Naofumi Murata, Toshiharu Katayama, Kyoichiro Asayama, Nobuyoshi Hattori, Toru Koyama, Koji Nakamae

    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING　Vol. 27　No. 1　p. 16-21　2014/02　Research paper (scientific journal)

  9. Study of formation mechanism of nickel silicide discontinuities in high-performance complementary metal-oxide-semiconductor devices

    Shuichi Kudo, Yukinori Hirose, Yoshifumi Ogawa, Tadashi Yamaguchi, Keiichiro Kashihara, Naofumi Murata, Toshiharu Katayama, Nobuyoshi Hattori, Toru Koyama, Koji Nakamae

    JAPANESE JOURNAL OF APPLIED PHYSICS　Vol. 53　No. 2　p. 21301-21301　2014/02　Research paper (scientific journal)

  10. A simple visualizing technique of impurity diffusion layer using porous silicon phenomena

    N. Yamaguchiya, Y. Hirose, N. Nakanishi, H. Maeda, E. Yoshida, T. Katayama, T. Koyama

    IEEE International Reliability Physics Symposium Proceedings　2012　Research paper (international conference proceedings)

  11. Analysis of hot carrier degradation of lateral double-diffused metal-oxide-semiconductor under gate pulse stress

    Keiichi Furuya, Tetsuya Nitta, Toshiharu Katayama, Kenichi Hatasako, Takashi Kuroi, Shigeto Maegawa

    Japanese Journal of Applied Physics　Vol. 49　No. 4 PART 2　p. 04DP12-1〜5　2010/04　Research paper (scientific journal)

    Publisher: IOP Publishing

  12. Three-dimensional visualization technique for crystal defects in high performance p-channel metal-oxide-semiconductor field-effect transistors with embedded SiGe SOURCE/DRAIN

    Shuichi Kudo, Nobuto Nakanishi, Yukinori Hirose, Kazuhiko Sato, Tomohiro Yamashita, Hidekazu Oda, Keiichiro Kashihara, Naofumi Murata, Toshiharu Katayama, Kyoichiro Asayama, Junko Komori, Eiichi Murakami

    Japanese Journal of Applied Physics　Vol. 49　No. 4 PART 2　p. 04DA22-04DA22　2010/04　Research paper (scientific journal)

    Publisher: IOP Publishing

  13. Study of formation mechanism of nickel silicide discontinuities in high performance CMOS devices

    S. Kudo, Y. Hirose, T. Futase, Y. Ogawa, T. Yamaguchi, K. Kihara, K. Kashihara, N. Murata, T. Katayama, K. Asayama, E. Murakami

    IEEE International Reliability Physics Symposium Proceedings　p. 311-316　2009　Research paper (international conference proceedings)

  14. Necessity of pulse hot carrier evaluation in suppressing self-heating effect for SOI smart power

    T. Nitta, S. Yanagi, T. Igarashi, K. Hatasako, S. Maegawa, K. Furuya, T. Katayama

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs　p. 84-87　2009　Research paper (international conference proceedings)

  15. Evaluation of Cu contamination induced pit failure and improvement by hydrogen anneal and epitaxial growth

    Hidekazu Yamamoto, Yasuhiro Kimura, Kazuhito Matsukawa, Toshiharu Katayama, Koji Fukumoto, Yoji Mashiko

    ELECTROCHEMISTRY　Vol. 76　No. 9　p. 661-665　2008/09　Research paper (scientific journal)

  16. Influence of electron shading on highly selective SiO2 to Si etching

    K Yonekura, T Katayama, T Maruyama, N Fujiwara, H Miyatake

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS　Vol. 18　No. 1　p. 176-180　2000/01　Research paper (scientific journal)

  17. Influence of silicon surface integrity on device yield

    Yasuhiro Kimura, Hideki Naruoka, Morihiko Kume, Toshiharu Katayama, Hidekazu Yamamoto, Yoji Mashiko

    Proceedings of SPIE - The International Society for Optical Engineering　Vol. 3510　p. 169-177　1998　Research paper (international conference proceedings)

  18. Detection of gate oxide defects using electrochemical wet etching in KOH: H2O solution

    N. Ohtani, T. Katayama, H. Yamamoto, H. Koyama

    Proceedings of the 23rd International Symposium for Testing and Failure Analysis　p. 279-283　1997/10　Research paper (international conference proceedings)

  19. Effects of the oxidation process on the electrical characteristics of oxidized nitride films

    M. K. Mazumder, T. Katayama, K. Kobayashi, Y. Mashiko, H. Koyama, A. Yasuoka

    Applied Physics Letters　Vol. 69　No. 8　p. 1140-1142　1996/08/19　Research paper (scientific journal)

  20. Ultrathin silicon nitride films fabricated by single-wafer processing using an SiH<inf>2</inf>Cl<inf>2</inf>-NH<inf>3</inf>-H<inf>2</inf> system and in situ H<inf>2</inf> cleaning

    Kiyoteru Kobayashi, Yutaka Inaba, Tamotsu Ogata, Toshiharu Katayama, Hajime Watanabe, Yasuji Matsui, Makoto Hirayama

    Journal of the Electrochemical Society　Vol. 143　No. 4　p. 1459-1464　1996/04　Research paper (scientific journal)

  21. Disk-shaped stacked capacitor cell for 256 Mb dynamic random-access memory

    Toshinori Morihara, Yoshikazu Ohno, Takahisa Eimori, Toshiharu Katayama, Shinichi Satoh, Tadashi Nishimura, Hirokazu Miyoshi

    Japanese Journal of Applied Physics　Vol. 33　No. 8 R　p. 4570-4575　1994/08　Research paper (scientific journal)

    Publisher: IOP Publishing

  22. Newly designed planar stacked capacitor cell with high dielectric constant film for 256Mbit DRAM

    T. Eimori, Y. Ohno, H. Kimura, J. Matsufusa, S. Kishimura, A. Yoshida, H. Sumitani, T. Maruyama, Y. Hayashide, K. Morizumi, T. Katayama, M. Asakura, T. Horikawa, T. Shibano, H. Itoh, K. Sato, K. Namoba

    Technical Digest - International Electron Devices Meeting　p. 631-634　1993　Research paper (international conference proceedings)

  23. Low-temperature (625°C) silicon epitaxial growth on silicon substrates heated-up in SiH<inf>4</inf> atmosphere

    K. Kobayashi, K. Fukumoto, T. Katayama, T. Higaki, H. Abe

    Conference on Solid State Devices and Materials　p. 17-19　1992　Research paper (international conference proceedings)

  24. A new failure mechanism related to grain growth in DRAMs

    T. Katayama, Y. Mashiko, J. Mitsuhashi, T. Koyama, K. Tsukamoto, S. Ikeda, A. Nakayama, H. Koyama, N. Tsubouchi

    Annual Proceedings - Reliability Physics (Symposium)　p. 183-187　1991/04　Research paper (international conference proceedings)

  25. A highly reliable multilevel interconnection process for 0.6μm CMOS devices

    Y. Takata, A. Ishii, M. Matsuura, A. Ohsaki, M. Iwasaki, J. Miyazaki, N. Fujiwara, J. Komori, T. Katayama, S. Nakao, H. Kotani

    1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991　p. 13-19　1991　Research paper (international conference proceedings)

  26. Deposition of polycrystalline silicon by rapid thermal CVD and its application to direct contact to TiSi<inf>2</inf>

    T. Yamaguchi, H. Itoh, T. Katayama, K. Tsukamoto, Y. Akasaka

    Conference on Solid State Devices and Materials　p. 132-134　1991　Research paper (international conference proceedings)

  27. Hybridization of 3d states of photodoped Cu in amorphous GeSe2 by resonant photoemission spectroscopy

    Koichi Inoue, Toshiharu Katayama, Mitsuaki Kobayashi, Koji Kawamoto, Kazuo Murase

    Physical Review B　Vol. 42　No. 8　p. 5154-5158　1990　Research paper (scientific journal)

  28. Practical results of photomask repair using focused ion beam technology

    K. Saitoh, H. Onoda, H. Morimoto, T. Katayama, Y. Watakabe, T. Kato

    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures　Vol. 6　No. 3　p. 1032-1032　1988/05　Research paper (scientific journal)

    Publisher: American Vacuum Society

  29. Electronic structures of GeSe2 in crystalline, amorphous, and Ag-photodoped amorphous phases studied by photoemission and optical spectra

    Koichi Inoue, Toshiharu Katayama, Koji Kawamoto, Kazuo Murase

    Physical Review B　Vol. 35　No. 14　p. 7496-7504　1987　Research paper (scientific journal)

Misc. 2

  1. Guest Editorial Special Section on the 2016 International Symposium on Semiconductor Manufacturing

    Toshiharu Katayama

    IEEE Transactions on Semiconductor Manufacturing　Vol. 30　No. 4　p. 315-316　2017/11/01

    Publisher: Institute of Electrical and Electronics Engineers Inc.

  2. Evaluation technologies for advanced semiconductor devices

    Vol. 63　No. 3　p. 50-54　2011

    Publisher: 生産技術振興協会

Presentations 17

  1. Detection of gate oxide defects using electrochemical wet etching in KOH: H2O solution

    N. Ohtani, T. Katayama, H. Yamamoto, H. Koyama

    Proceedings of the 23rd International Symposium for Testing and Failure Analysis　1997/10

  2. 8a-C21-3 Effect of carbon on boron clustering and diffusion in silicon studied by atom probe tomography

    Yuan Tu, Yasuo Shimizu, Masao Inoue, Yorinobu Kunimune, Yasuhiro Shimada, Toshiharu Katayama, Takashi Ide, Koji Inoue, Yasuyoshi Nagai

    2017/09/08

  3. 20p-S221-3 Al2O3中の水素分布評価 ー熱処理温度依存性ー

    清水康雄, 韓斌, 涂远, 井上耕治, 矢野史子, 井上真雄, 国宗依信, 島田康弘, 片山俊治, 井手隆, 永井康介

    第63回応用物理学会春季学術講演会　2016/03/20

  4. 13pmE_M2-03 ［100］入射STEM-CBEDを用いたパワーMOSデバイスの歪み解析技術

    中西伸登, 河上恵, 廣瀬幸範, 朝山匡一郎, 片山俊治

    日本顕微鏡学会第70回記念学術講演会　2014/05/13

  5. 13a-F5-6 硬X線光電子分光によるバイアス印加MOS界面の電子状態解析

    篠原稔宏, 豊田智史, 堀場弘司, 尾嶋正治, 片山俊治, 助川孝江, 池永英司

    第73回応用物理学会学術講演会　2012/09/13

  6. 18p-A1-1 電圧印加MOS構造のoperando放射光光電子分光による界面準位密度分布の解析

    篠原稔宏, 豊田智史, 組頭広志, 尾嶋正治, 片山俊治, 助川孝江, 劉紫園

    第59回応用物理学関連講演会　2012/03/18

  7. 1p-J-3 シリコンの価電子帯分散構造の2 軸引っぱり歪みによる変化

    武田さくら, 田畑裕貴, 坂田智裕, アヨブ ヌル イダユ, 前島尚行, 松岡弘憲, 稲岡毅, 有馬健太, 澤野憲太郎, 手塚勉, 片山俊治, 吉丸正樹, 今村健, 大門寛

    第72回 応用物理学会学術講演会　2011/09/01

  8. 22pRC-10 高温熱処理が空間電荷層中の電子状態に及ぼす影響(22pRC 表面界面電子物性(表面伝導・光電子分光),領域9(表面・界面,結晶成長))

    坂田 智裕, 武田 さくら, イダユ ヌル, 田畑 裕貴, 松岡 弘憲, 森田 誠, 手塚 勉, 片山 俊治, 吉丸 正樹, 大門 寛

    日本物理学会講演概要集 66(2)　2011/08/24

  9. 22pRC-9 歪みシリコンの価電子帯分散構造の実験的解明(22pRC 表面界面電子物性(表面伝導・光電子分光),領域9(表面・界面,結晶成長))

    武田 さくら, 田畑 裕貴, 坂田 智裕, Ayob Nur Idayu, 有馬 健太, 澤野 憲太郎, 稲岡 毅, 手塚 勉, 片山 俊治, 吉丸 正樹, 今村 健, 大門 寛

    日本物理学会講演概要集 66(2)　2011/08/24

  10. Electronic Structure and Effective Masses in Ge(110) Surface by High-Resolution Angle-Resolved Photoelectron Spectroscopy

    Hironori Matsuoka, Sakura Nishino Takeda, Makoto Morita, Hiroki Tabata, Mie Hashimoto, Ken Hattori, Hiroshi Daimon, Masaki Yoshimaru, Toshiharu Katayama, Tsutomu Teduka

    2011/01/23

  11. 28p-ZH-2 EUPSで測定したHfSiON/Siのバンド曲がりの膜厚依存性

    富江敏尚, 葛西彪, 岩住ひろ美, 片山俊治, 井上真雄, 朝山匡一郎

    第54回応用物理学関係連合講演会　2007/03/28

  12. 29a-PB-3 光電子回折効果を考慮したSiO2/Si(100)系の角度依存XPS評価

    片山俊治, 山本秀和, 梅野正隆

    第45回応用物理学関係連合講演会　1998/03/29

  13. 2p-N-2 Cuデコレーション／SEMによる鏡面研磨工程起因の酸化膜耐圧不良部の観察

    成岡英樹, 片山俊治, 山本秀和, 小山浩

    第58回応用物理学会学術講演会　1997/10/02

  14. 9a-PB-20 多結晶シリコン薄膜上に形成した陽極酸化膜の評価

    大谷尚子, 片山俊治, 山本秀和, 小山浩

    第57回応用物理学会学術講演会　1996/09/09

  15. Electronic Structure of Cu Photodoped in amorphous GeSe_2

    Inoue K., Katayama T., Kobayashi K., Kawamoto K., Murase K.

    Meeting Abstracts of the Physical Society of Japan　1990

  16. 2p-F-10 アモルファスGeSe_2のVUV反射スペクトル

    井上 恒一, 片山 俊治, 邑瀬 和生

    秋の分科会予稿集　1985

  17. 1p-D1-7 アモルファスGeSe_2の内殻励起子(半導体(アモルファス・ナローギャップ))

    井上 恒一, 小林 光明, 邑瀬 和生, 片山 俊治

    年会講演予稿集　1985