EN

基本情報

研究

社会活動

その他の活動

須藤 孝一

Koichi Sudoh

産業科学研究所,准教授

keyword ナノ構造,結晶成長,表面・界面

学歴

  • ~ 1999年,大阪大学,工学研究科,応用物理学
  • ~ 1999年,大阪大学
  • ~ 1993年,大阪大学,工学部,応用物理
  • ~ 1993年,大阪大学

経歴

  • 1999年 ~ ,日本学術振興会 特別研究員
  • 1999年 ~ ,Research Fellow of the Japan Society for the Promotion of Science

研究内容・専門分野

  • ナノテク・材料,薄膜、表面界面物性

所属学会

  • 日本表面科学会
  • 日本物理学会
  • 応用物理学会

論文

  • Impact of the Air Atmosphere on Photoinduced Chain Polymerization in Self-Assembled Monolayers of Diacetylene on Graphite,Daisuke Takajo,Koichi Sudoh,Langmuir,American Chemical Society (ACS),Vol. 37,No. 19,p. 6002-6006,2021年05月18日,研究論文(学術雑誌)
  • Study on energy level bending at heterojunction of solution-processed phthalocyanine thin film and n-Si by Kelvin probe force microscopy,Ryo Ishiura,Akihiko Fujii,Makoto Arita,Koichi Sudoh,Masanori Ozaki,Organic Electronics,Elsevier BV,Vol. 78,p. 105599-105599,2020年03月,研究論文(学術雑誌)
  • Formation of Crystallographically Oriented Metastable Mg1.8Si in Mg Ion-Implanted Si,Yuki Kobayashi,Muneyuki Naito,Koichi Sudoh,Aurélie Gentils,Cyril Bachelet,Jérôme Bourçois,Crystal Growth & Design,American Chemical Society (ACS),Vol. 19,No. 12,p. 7138-7142,2019年12月04日,研究論文(学術雑誌)
  • Mechanism of Chain Polymerization in Self-Assembled Monolayers of Diacetylene on the Graphite Surface,Daisuke Takajo,Koichi Sudoh,Langmuir,American Chemical Society (ACS),Vol. 35,No. 6,p. 2123-2128,2019年02月12日,研究論文(学術雑誌)
  • Stability of Two-Dimensional Polymorphs for 10,12-Pentacosadyn-1-ol on Graphite Investigated by SPM,Daisuke Takajo,Koichi Sudoh,Applied Sciences,MDPI AG,Vol. 8,No. 4,p. 503-503,2018年03月27日,研究論文(学術雑誌)
  • Preparation of Peapod Polymer via the Supramolecular Chain Formation by Tris(spiroborate) Twin Bowl,Hiroshi Danjo,Toshi Nakagawa,Akio Morii,Yusuke Muraki,Koichi Sudoh,ACS Macro Letters,American Chemical Society (ACS),Vol. 6,No. 1,p. 62-65,2017年01月17日,研究論文(学術雑誌)
  • Uniaxial crystal growth in thin film by utilizing supercooled state of mesogenic phthalocyanine,Mihary Fiderana Ramananarivo,Takuya Higashi,Masashi Ohmori,Koichi Sudoh,Akihiko Fujii,Masanori Ozaki,APPLIED PHYSICS EXPRESS,IOP PUBLISHING LTD,Vol. 9,No. 6,2016年06月,研究論文(学術雑誌)
  • Two-Dimensional Solid-State Topochemical Reactions of 10,12-Pentacosadiyn-1-ol Adsorbed on Graphite,Daisuke Takajo,Akira Inaba,Koichi Sudoh,Langmuir,American Chemical Society (ACS),Vol. 30,No. 10,p. 2738-2744,2014年03月18日,研究論文(学術雑誌)
  • Application of Silicon on Nothing Structure for Developing a Novel Capacitive Absolute Pressure Sensor,Xiuchun Hao,Sinya Tanaka,Atsuhiko Masuda,Jun Nakamura,Koichi Sudoh,Kazusuke Maenaka,Hidekuni Takao,Kohei Higuchi,IEEE Sensors Journal,Institute of Electrical and Electronics Engineers (IEEE),Vol. 14,No. 3,p. 808-815,2014年03月,研究論文(学術雑誌)
  • Two polymorphic forms of 10,12-pentacosadiyn-1-ol molecular layers on graphite transferred from an aqueous surface,Daisuke Takajo,Akira Inaba,Koichi Sudoh,SURFACE SCIENCE,ELSEVIER SCIENCE BV,Vol. 620,p. 38-44,2014年02月,研究論文(学術雑誌)
  • Shape evolution of high aspect ratio holes on Si(001) during hydrogen annealing,K. Sudoh,R. Hiruta,H. Kuribayashi,Journal of Applied Physics,Vol. 114,No. 18,2013年11月14日,研究論文(学術雑誌)
  • Nano-Scale Tensile Testing and Sample Preparation Techniques for Silicon Nanowires,Tatsuya Fujii,Koichi Sudoh,Shouichi Sakakihara,Muneyuki Naito,Shozo Inoue,Takahiro Namazu,JAPANESE JOURNAL OF APPLIED PHYSICS,IOP PUBLISHING LTD,Vol. 52,No. 11,2013年11月,研究論文(学術雑誌)
  • Interfacial reaction during dewetting of ultrathin silicon on insulator,Koichi Sudoh,Muneyuki Naito,COMPTES RENDUS PHYSIQUE,ELSEVIER FRANCE-EDITIONS SCIENTIFIQUES MEDICALES ELSEVIER,Vol. 14,No. 7,p. 601-606,2013年08月,研究論文(学術雑誌)
  • Formation of silicon-on-nothing structures with extremely flat surfaces,Koichi Sudoh,Jun Nakamura,Muneyuki Naito,Kohei Higuchi,Kazusuke Maenaka,Kazusuke Maenaka,Japanese Journal of Applied Physics,Vol. 52,2013年01月01日
  • Anomalous decay of multilayer holes on SrTiO3(001),Mahito Yamamoto,Koichi Sudoh,Hiroshi Iwasaki,Ellen D. Williams,PHYSICAL REVIEW B,AMER PHYSICAL SOC,Vol. 82,No. 11,2010年09月,研究論文(学術雑誌)
  • A theoretical framework to obtain interface's shapes during the high-temperature annealing of high-aspect-ratio gratings,Marcos F. Castez,Roberto C. Salvarezza,Jun Nakamura,Koichi Sudoh,APPLIED PHYSICS LETTERS,AMER INST PHYSICS,Vol. 97,No. 12,2010年09月,研究論文(学術雑誌)
  • Anomalous Enhancement of Scanning Tunneling Microscope-Excited Light Emission from Gold Films on Graphite Substrate,Tie-Zhu Han,Hongwen Liu,Koichi Sudoh,Ryusuke Nishitani,Hiroshi Iwasaki,JAPANESE JOURNAL OF APPLIED PHYSICS,IOP PUBLISHING LTD,Vol. 48,No. 11,2009年11月,研究論文(学術雑誌)
  • Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),K. Sudoh,H. Iwasaki,R. Hiruta,H. Kuribayashi,R. Shimizu,Journal of Applied Physics,AIP Publishing,Vol. 105,No. 8,p. 083536-083536,2009年04月15日,研究論文(学術雑誌)
  • Desymmetrization of the polyhedral crystal shape of tetragonal lysozyme due to face-growth rate fluctuations,N. Hori,K. Sudoh,Hiroshi Iwasaki,Journal of Crystal Growth,Elsevier BV,Vol. 309,No. 2,p. 164-169,2007年12月,研究論文(学術雑誌)
  • Evolution of One-Dimensional Gratings with High Aspect Ratios on Si(001) Surfaces by High-Temperature Annealing,Jun Nakamura,Koichi Sudoh,Hiroshi Iwasaki,Japanese Journal of Applied Physics,IOP Publishing,Vol. 46,No. 11,p. 7194-7197,2007年11月06日,研究論文(学術雑誌)
  • Decay of multilayer holes on SrTiO3(001),M. Yamamoto,K. Sudoh,H. Iwasaki,Surface Science,Elsevier BV,Vol. 601,No. 5,p. 1255-1258,2007年03月,研究論文(学術雑誌)
  • Molecular fluorescence from H2TBP porphyrin film on Ag substrate excited by tunneling electrons,Hongwen Liu,Ryusuke Nishitani,Yutaka Ie,Koichi Sudoh,Marek Nowicki,Tatsuo Yoshinobu,Yoshio Aso,Hiroshi Iwasaki,Ultramicroscopy,Vol. 106,p. 785-788,2006年06月01日
  • Observation of Si(100) surfaces annealed in hydrogen gas ambient by scanning tunneling microscopy,Hitoshi Kuribayashi,Masahide Gotoh,Reiko Hiruta,Ryosuke Shimizu,Koichi Sudoh,Hiroshi Iwasaki,APPLIED SURFACE SCIENCE,ELSEVIER SCIENCE BV,Vol. 252,No. 15,p. 5275-5278,2006年05月,研究論文(学術雑誌)
  • Flattening of micro-structured Si surfaces by hydrogen annealing,R Hiruta,H Kuribayashi,R Shimizu,K Sudoh,H Iwasaki,APPLIED SURFACE SCIENCE,ELSEVIER SCIENCE BV,Vol. 252,No. 15,p. 5279-5283,2006年05月,研究論文(学術雑誌)
  • Step dynamics in relaxation of sharp corners on crystal surfaces,K Sudoh,H Iwasaki,H Kuribayashi,R Hiruta,R Shimizu,SURFACE SCIENCE,ELSEVIER SCIENCE BV,Vol. 600,No. 6,p. L67-L70,2006年03月,研究論文(学術雑誌)
  • Simulation method for buried oxide formation of separation by implanted oxygen structure during post-implantation thermal annealing,M Nakao,K Sudoh,H Iikawa,H Iwasaki,K Izumi,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,JAPAN SOC APPLIED PHYSICS,Vol. 44,No. 4B,p. 2380-2384,2005年04月,研究論文(学術雑誌)
  • Scaling behavior of island density in submonolayer growth of CaF2 on vicinal Si(111),Y. Miyata,K. Sudoh,K. Kametani,Hiroshi Iwasaki,Surface Science,Elsevier BV,Vol. 574,No. 1,p. 95-98,2005年01月,研究論文(学術雑誌)
  • Growth of SiC nanodots on Si(111) by exposure to ferrocene and annealing studied by scanning tunneling microscopy,K Kametani,K Sudoh,H Iwasaki,THIN SOLID FILMS,ELSEVIER SCIENCE SA,Vol. 467,No. 1-2,p. 50-53,2004年11月,研究論文(学術雑誌)
  • Evolution of surface morphology of Si-trench sidewalls during hydrogen annealing,R Hiruta,H Kuribayashi,S Shimizu,K Sudoh,H Iwasaki,APPLIED SURFACE SCIENCE,ELSEVIER SCIENCE BV,Vol. 237,No. 1-4,p. 63-67,2004年10月,研究論文(学術雑誌)
  • Numerical Study on Shape Transformation of Silicon Trenches by High-Temperature Hydrogen Annealing,Koichi Sudoh,Hiroshi Iwasaki,Hitoshi Kuribayashi,Reiko Hiruta,Ryosuke Shimizu,Japanese Journal of Applied Physics,IOP Publishing,Vol. 43,No. 9A,p. 5937-5941,2004年09月09日,研究論文(学術雑誌)
  • Hydrogen pressure dependence of trench corner rounding during hydrogen annealing,Hitoshi Kuribayashi,Ryosuke Shimizu,Koichi Sudoh,Hiroshi Iwasaki,Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,American Vacuum Society,Vol. 22,No. 4,p. 1406-1409,2004年07月,研究論文(学術雑誌)
  • Step distribution on vicinal SrTiO3(001) surfaces,K Sudoh,H Iwasaki,SURFACE SCIENCE,ELSEVIER SCIENCE BV,Vol. 557,No. 1-3,p. L151-L155,2004年05月,研究論文(学術雑誌)
  • Investigation of Shape Transformation of Silicon Trenches during Hydrogen Annealing,Hitoshi Kuribayashi,Reiko Hiruta,Ryosuke Shimizu,Koichi Sudoh,Hiroshi Iwasaki,Japanese Journal of Applied Physics,IOP Publishing,Vol. 43,No. No. 4A,p. L468-L470,2004年03月19日,研究論文(学術雑誌)
  • Step dynamics in faceting on vicinal Si(113) surfaces,K Sudoh,H Iwasaki,JOURNAL OF PHYSICS-CONDENSED MATTER,IOP PUBLISHING LTD,Vol. 15,No. 47,p. S3241-S3253,2003年12月,研究論文(学術雑誌)
  • Nanolithography on SiO2/Si with a scanning tunnelling microscope,H Iwasaki,T Yoshinobu,K Sudoh,NANOTECHNOLOGY,IOP PUBLISHING LTD,Vol. 14,No. 11,p. R55-R62,2003年11月
  • Shape transformation of silicon trenches during hydrogen annealing,H Kuribayashi,R Hiruta,R Shimizu,K Sudoh,H Iwasaki,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,A V S AMER INST PHYSICS,Vol. 21,No. 4,p. 1279-1283,2003年07月,研究論文(学術雑誌)
  • Interface morphology of thermal-oxide/Si(001) studied by scanning tunneling microscopy,M Gotoh,K Sudoh,H Iwasaki,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,INST PURE APPLIED PHYSICS,Vol. 41,No. 12,p. 7293-7296,2002年12月,研究論文(学術雑誌)
  • Electron tunneling through an Al2O3 thin film on NiAl(110) in scanning tunneling microscopy,H Iwasaki,K Sudoh,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,JAPAN SOC APPLIED PHYSICS,Vol. 41,No. 12,p. 7496-7500,2002年12月,研究論文(学術雑誌)
  • Selective reaction of ferrocene with Si(111) using a CaF mask,K Kametani,K Sudoh,H Iwasaki,JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,INST PURE APPLIED PHYSICS,Vol. 41,No. 11A,p. L1247-L1249,2002年11月,研究論文(学術雑誌)
  • Analysis of SiO2/Si(001) interface roughness for thin gate oxides by scanning tunneling microscopy,M Gotoh,K Sudoh,H Itoh,K Kawamoto,H Iwasaki,APPLIED PHYSICS LETTERS,AMER INST PHYSICS,Vol. 81,No. 3,p. 430-432,2002年07月,研究論文(学術雑誌)
  • Electron-beam-induced decomposition of SiO2 overlay on si in STM nanolithography,H Iwasaki,T Ito,M Gotoh,L Nan,K Sudoh,NANOSCALE SPECTROSCOPY AND ITS APPLICATIONS TO SEMICONDUCTOR RESEARCH,SPRINGER-VERLAG BERLIN,Vol. 588,p. 231-240,2002年,研究論文(国際会議プロシーディングス)
  • Epitaxial growth of CaF2 films on Si(111) studied by scanning tunneling microscopy,K Kametani,K Sudoh,H Iwasaki,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,INST PURE APPLIED PHYSICS,Vol. 41,No. 1,p. 250-255,2002年01月,研究論文(学術雑誌)
  • Kinetics of faceting driven by attractive step-step interactions on vicinal Si(113),K Sudoh,H Iwasaki,PHYSICAL REVIEW LETTERS,AMERICAN PHYSICAL SOC,Vol. 87,No. 21,2001年11月,研究論文(学術雑誌)
  • Quantum yield of electron-beam induced decomposition of SiO2 overlay on Si in nanolithography using a scanning tunneling microscope,T Ito,M Gotoh,K Sudoh,H Iwasaki,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,INST PURE APPLIED PHYSICS,Vol. 40,No. 10,p. 6055-6058,2001年10月,研究論文(学術雑誌)
  • Electron tunneling through SiO2/Si structures in scanning tunneling microscopy,H Iwasaki,M Gotoh,K Sudoh,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,JAPAN SOC APPLIED PHYSICS,Vol. 40,No. 8,p. 5116-5120,2001年08月,研究論文(学術雑誌)
  • Roughening of the Si/SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopy,M Gotoh,K Sudoh,H Iwasaki,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,AMER INST PHYSICS,Vol. 18,No. 4,p. 2165-2168,2000年07月,研究論文(学術雑誌)
  • Nanopit formation and manipulation of steps on Si(001) at high temperatures with a scanning tunneling microscope,K Sudoh,H Iwasaki,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,JAPAN J APPLIED PHYSICS,Vol. 39,No. 7B,p. 4621-4623,2000年07月,研究論文(学術雑誌)
  • Facet growth due to attractive step-step interactions on vicinal Si(113),K Sudoh,H Iwasaki,ED Williams,SURFACE SCIENCE,ELSEVIER SCIENCE BV,Vol. 452,No. 1-3,p. L287-L292,2000年05月
  • Current-induced step bunching on vicinal Si(111) studied by light scattering,T Yoshinobu,S Matsukawa,K Sudoh,H Iwasaki,JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,JAPAN J APPLIED PHYSICS,Vol. 39,No. 4B,p. L380-L383,2000年04月,研究論文(学術雑誌)
  • Controllable Nanopit Formation on Si(001) with a Scanning Tunneling Microscope,Naotada Ueda,Koichi Sudoh,Nan Li,Tatsuo Yoshinobu,Hiroshi Iwasaki,Japanese Journal of Applied Physics,IOP Publishing,Vol. 38,No. Part 1, No. 9A,p. 5236-5238,1999年09月15日,研究論文(学術雑誌)
  • Statistical analysis of step meandering on Si(113) miscut along a low symmetry azimuth,K Sudoh,T Yoshinobu,H Iwasaki,SURFACE SCIENCE,ELSEVIER SCIENCE BV,Vol. 419,No. 2-3,p. 128-133,1999年01月,研究論文(学術雑誌)
  • Scanning tunneling microscopy study of faceting on vicinal Si(113),K Sudoh,T Yoshinobu,H Iwasaki,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,JAPAN J APPLIED PHYSICS,Vol. 37,No. 11,p. 5870-5874,1998年11月,研究論文(学術雑誌)
  • Step Fluctuations on Vicinal Si(113),K. Sudoh,T. Yoshinobu,H. Iwasaki,Ellen D. Williams,Physical Review Letters,American Physical Society (APS),Vol. 80,No. 23,p. 5152-5155,1998年06月08日,研究論文(学術雑誌)
  • Fluctuations of a single step and surface height on vicinal surfaces,K Sudoh,T Yoshinobu,H Iwasaki,N Akutsu,T Yamamoto,JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,PHYSICAL SOC JAPAN,Vol. 65,No. 4,p. 988-991,1996年04月,研究論文(学術雑誌)
  • SCALING OF SI/SIO2 INTERFACE ROUGHNESS,T YOSHINOBU,A IWAMOTO,K SUDOH,H IWASAKI,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,AMER INST PHYSICS,Vol. 13,No. 4,p. 1630-1634,1995年07月,研究論文(学術雑誌)

MISC

  • ケルビンプローブフォース顕微鏡を用いたフタロシアニン誘導体塗布薄膜の界面物性評価,正能拓馬,石裏遼,有田誠,須藤孝一,藤井彰彦,尾崎雅則,電気学会全国大会講演論文集(CD-ROM),Vol. 2021,2021年
  • ケルビンプローブフォース顕微鏡によるアルキルフタロシアニン塗布薄膜の界面物性評価 II,石裏遼,正能拓馬,藤井彰彦,有田誠,須藤孝一,尾崎雅則,応用物理学会春季学術講演会講演予稿集(CD-ROM),Vol. 67th,2020年
  • ケルビンプローブフォース顕微鏡によるアルキルフタロシアニン塗布薄膜の界面物性評価 III,正能拓馬,石裏遼,藤井彰彦,有田誠,須藤孝一,尾崎雅則,応用物理学会秋季学術講演会講演予稿集(CD-ROM),Vol. 81st,2020年
  • ケルビンプローブフォース顕微鏡によるアルキルフタロシアニン塗布薄膜の界面物性評価,石裏遼,藤井彰彦,有田誠,須藤孝一,尾崎雅則,応用物理学会秋季学術講演会講演予稿集(CD-ROM),Vol. 80th,2019年
  • 液晶性フタロシアニンを用いた単結晶薄膜の作製,藤井彰彦,東卓也,大森雅志,宇野貴志,RAMANANARIVO Mihary Fiderana,安西佑策,中谷光宏,北川貴大,須藤孝一,尾崎雅則,電子情報通信学会技術研究報告,Vol. 116,No. 392(OME2016 67-73),2017年
  • 結晶多形を示すアルキルフタロシアニンの単結晶薄膜成長,藤井彰彦,東卓也,大森雅志,宇野貴志,RAMANANARIVO Mihary Fiderana,安西佑策,中谷光宏,北川貴大,須藤孝一,尾崎雅則,応用物理学会春季学術講演会講演予稿集(CD-ROM),Vol. 64th,2017年
  • Nano-Scale Tensile Testing and Sample Preparation Techniques for Silicon Nanowires (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces),Fujii Tatsuya,Sudoh Koichi,Sakakihara Shouichi,Japanese journal of applied physics : JJAP,The Japan Society of Applied Physics,Vol. 52,No. 11,p. 110118-1-9,2013年11月
  • Step thermal relaxation on SrTiO3(001) surface,Hiroomi Goto,Koichi Sudoh,Hiroshi Iwasaki,Shinku/Journal of the Vacuum Society of Japan,Vacuum Society of Japan,Vol. 48,No. 5,p. 337-338,2005年
  • 7aSN-3 SrTiO3(001)表面におけるステップの形態(結晶成長・表面界面ダイナミクス,領域9),須藤 幸一,岩崎 裕,日本物理学会講演概要集,一般社団法人日本物理学会,Vol. 57,No. 2,p. 757-757,2002年08月13日
  • 走査プローブ法による半導体表面ナノ加工,須藤 孝一,李 楠,川本 一平,吉信 達夫,岩崎 裕,電子顕微鏡,日本電子顕微鏡学会,Vol. 34,p. 173-176,1999年11月01日

講演・口頭発表等

  • Nano-scale morphology and hydrogenation of Si surfaces in the early phase of hydrogen annealing,R. Shimizu,H. Kuribayashi,R. Hiruta,K. Sudoh,H. Iwasaki,PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY,2008年
  • Time evolution of nano-scale morphology of silicon microstructure surfaces in the early phase of hydrogen annealing,Reiko Hiruta,Hitoshi Kuribayashi,Ryosuke Shimizu,Koichi Sudoh,Hiroshi Iwasaki,GROUP IV SEMICONDUCTOR NANOSTRUCTURES-2006,2007年
  • Mechanism and control technology of trench corner rounding by hydrogen annealing for highly reliable trench MOSFET,Ryosuke Shimizu,Hitoshi Kuribayashi,Reiko Hiruta,Koichi Sudoh,Hiroshi Iwasaki,PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS,2006年
  • Step thermal relaxation on SrTiO3(001) surface,Hiroomi Goto,Koichi Sudoh,Hiroshi Iwasaki,Shinku/Journal of the Vacuum Society of Japan,2005年
  • Electron-beam-induced decomposition of SiO2 overlay on si in STM nanolithography,H Iwasaki,T Ito,M Gotoh,L Nan,K Sudoh,NANOSCALE SPECTROSCOPY AND ITS APPLICATIONS TO SEMICONDUCTOR RESEARCH,2002年
  • Scaling Analysis of a- and poly-Si Surface Roughness by Atomic Force Microscopy,T. Yoshinobu,A. Iwamoto,K. Sudoh,H. Iwasaki,Mat. Res. Soc. Symp. Proc.,1995年12月
  • Dynamic scaling in electrochemical deposition,H IWASAKI,A IWAMOTO,K SUDOH,T YOSHINOBU,FRACTAL ASPECTS OF MATERIALS,1995年