EN

基本情報

研究

社会活動

その他の活動

藤原 康文

Fujiwara Yasufumi

工学研究科 マテリアル生産科学専攻,教授

keyword 電子・電気材料工学,応用物性・結晶工学

学歴

  • 1983年04月 ~ 1985年07月,大阪大学,基礎工学研究科,物理系専攻電気工学分野博士後期課程
  • 1981年04月 ~ 1983年03月,大阪大学,基礎工学研究科,物理系専攻電気工学分野博士前期課程
  • 1977年04月 ~ 1981年03月,大阪大学,基礎工学部,電気工学科

経歴

  • 2017年04月 ~ 継続中,大阪大学,ナノサイエンスデザイン教育研究センター,センター長
  • 2003年07月 ~ 継続中,大阪大学,大学院工学研究科,教授
  • 2019年10月 ~ 2020年03月,鳥取大学,大学院工学研究科,非常勤講師
  • 2015年08月 ~ 2016年08月,大阪大学,副理事
  • 2006年04月 ~ 2011年03月,東京理科大学,総合研究機構,客員教授
  • 2008年10月 ~ 2009年03月,京都大学,大学院工学研究科,非常勤講師
  • 2006年04月 ~ 2009年03月,大阪教育大学,教育学部,非常勤講師
  • 2007年10月 ~ 2008年03月,京都大学,大学院工学研究科,非常勤講師
  • 2003年07月 ~ 2004年03月,名古屋大学,大学院工学研究科,非常勤講師
  • 1997年04月 ~ 2003年06月,名古屋大学,大学院工学研究科,助教授
  • 1993年04月 ~ 1997年03月,名古屋大学,工学部,助教授
  • 1995年11月 ~ 1996年01月,University of Illinois at Urbana-Champaign,Materials Research Laboratory and Department of Electrical and Computer Engineering,Visiting Associate Professor
  • 1991年01月 ~ 1993年03月,大阪大学,基礎工学部,講師
  • 1985年08月 ~ 1991年01月,大阪大学,基礎工学部,助手

研究内容・専門分野

  • ものづくり技術(機械・電気電子・化学工学),電気電子材料工学
  • ナノテク・材料,結晶工学
  • ナノテク・材料,応用物性

所属学会

  • 日本希土類学会
  • (一社)レーザー学会
  • (公社)日本材料学会
  • (公社)日本金属学会
  • (公社)応用物理学会

論文

  • Eu添加GaNレーザ発振に向けた2次元フォトニック結晶光ナノ共振器構造の検討,岩谷孟学,市川修平,村上雅人,舘林潤,藤原康文,材料,Vol. 69,No. 10,p. 721-726,2020年10月,研究論文(学術雑誌)
  • Direct Visualization and Determination of the Multiple Exciton Generation Rate,Dolf Timmerman,Eiichi Matsubara,Leyre Gomez,Masaaki Ashida,Tom Gregorkiewicz,Yasufumi Fujiwara,ACS Omega,American Chemical Society (ACS),Vol. 5,No. 34,p. 21506-21512,2020年09月01日,研究論文(学術雑誌)
  • Size dependence of quantum efficiency of red emission from GaN:Eu structures for application in micro-LEDs,D. Denier van der Gon,D. Timmerman,Y. Matsude,S. Ichikawa,M. Ashida,P. Schall,Y. Fujiwara,Optics Letters,The Optical Society,Vol. 45,No. 14,p. 3973-3973,2020年07月15日,研究論文(学術雑誌)
  • Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs,R. Higashi,M. Ogawa,J. Tatebayashi,N. Fujioka,D. Timmerman,S. Ichikawa,Y. Fujiwara,Journal of Applied Physics,AIP Publishing,Vol. 127,No. 23,p. 233101-233101,2020年06月21日,研究論文(学術雑誌)
  • Carrier dynamics and excitation of Eu3+ ions in GaN,Dolf Timmerman,Brandon Mitchell,Shuhei Ichikawa,Masaya Nagai,Masaaki Ashida,Yasufumi Fujiwara,Physical Review B,American Physical Society (APS),Vol. 101,No. 24,2020年06月17日,研究論文(学術雑誌)
  • Quantitative evaluation of enhanced Er luminescence in GaAs-based two-dimensional photonic crystal nanocavities,M. Ogawa,J. Tatebayashi,N. Fujioka,R. Higashi,M. Fujita,S. Noda,D. Timmerman,S. Ichikawa,Y. Fujiwara,Applied Physics Letters,{AIP} Publishing,Vol. 116,No. 18,p. 181102-181102,2020年05月04日,研究論文(学術雑誌)
  • Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength,S. Ichikawa,N. Yoshioka,J. Tatebayashi,Y. Fujiwara,Journal of Applied Physics,Vol. 127,No. 11,p. 113103-113103,2020年03月21日,研究論文(学術雑誌)
  • GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors,Tomohiro Inaba,Jun Tatebayashi,Keishi Shiomi,Dolf Timmerman,Shuhei Ichikawa,Yasufumi Fujiwara,ACS APPLIED ELECTRONIC MATERIALS,AMER CHEMICAL SOC,Vol. 2,No. 3,p. 732-738,2020年03月,研究論文(学術雑誌)
  • Valence states and the magnetism of Eu ions in Eu-doped GaN,Takumi Nunokawa,Yasufumi Fujiwara,Yusuke Miyata,Norifumi Fujimura,Takahiro Sakurai,Hitoshi Ohta,Akira Masago,Hikari Shinya,Tetsuya Fukushima,Kazunori Sato,Hiroshi Katayama-Yoshida,Journal of Applied Physics,AMER INST PHYSICS,Vol. 127,No. 8,2020年02月24日,研究論文(学術雑誌)
  • Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN,D. Timmerman,B. Mitchell,S. Ichikawa,J. Tatebayashi,M. Ashida,Y. Fujiwara,Physical Review Applied,American Physical Society (APS),Vol. 13,No. 1,p. 014044-014044,2020年01月24日,研究論文(学術雑誌)
  • Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology,B. Mitchell,D. Timmerman,W. Zhu,J. Y. Lin,H. X. Jiang,J. Poplawsky,R. Ishii,Y. Kawakami,V. Dierolf,J. Tatebayashi,S. Ichikawa,Y. Fujiwara,Journal of Applied Physics,Vol. 127,No. 1,p. 013102-013102,2020年01月07日,研究論文(学術雑誌)
  • Speckle reduction by driving current modulation for red semiconductor laser diodes,Takehiro Nishida,Yasufumi Fujiwara,Kazuhisa Yamamoto,Atsushi Koizumi,Tetsuya Yagi,IEEJ Transactions on Electronics, Information and Systems,Vol. 140,No. 2,p. 181-186,2020年,研究論文(学術雑誌)
  • Strong crystal field splitting and polarization dependence observed in the emission from Eu<sup>3+</sup> ions doped into GaN,S. Copelman,H. Austin,D. Timmerman,J. D. Poplawsky,M. Waite,J. Tatebayashi,S. Ichikawa,Y. Fujiwara,V. Dierolf,B. Mitchell,Proceedings of SPIE - The International Society for Optical Engineering,SPIE,Vol. 11302,2020年,研究論文(国際会議プロシーディングス)
  • Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD,A. Lesage,D. Timmerman,T. Inaba,T. Gregorkiewicz,Y. Fujiwara,Scientific Reports,Vol. 9,No. 1,p. 4231-4231,2019年12月01日,研究論文(学術雑誌)
  • 16.3: Invited Paper: New development in Red Light‐emitting Diodes (LEDs) using Eu‐doped GaN for Monolithic Micro‐LED Displays,Yasufumi FUJIWARA,Shuhei ICHIKAWA,Jun TATEBAYASHI,SID Symposium Digest of Technical Papers,Wiley,Vol. 50,No. S1,p. 167-167,2019年09月,研究論文(国際会議プロシーディングス)
  • Localized-surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes utilizing silver nanoparticles,Jun Tatebayashi,Tomoya Yamada,Tomohiro Inaba,Dolf Timmerman,Shuhei Ichikawa,Yasufumi Fujiwara,Applied Physics Express,IOP PUBLISHING LTD,Vol. 12,No. 9,p. 083901-083901,2019年09月01日,研究論文(学術雑誌)
  • Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of e u3+ ions,Ruoqiao Wei,Brandon Mitchell,Dolf Timmerman,Tom Gregorkiewicz,Wanxin Zhu,Jun Tatebayashi,Shuhei Ichikawa,Yasufumi Fujiwara,Volkmar Dierolf,Physical Review B,AMER PHYSICAL SOC,Vol. 100,No. 8,p. 081201(R)-081201(R),2019年08月02日,研究論文(学術雑誌)
  • Frontiers of Nitride Semiconductor Research FOREWORD,Shigefusa F. Chichibu,Yoshinao Kumagai,Kazunobu Kojima,Momoko Deura,Toru Akiyama,Munetaka Arita,Hiroshi Fujioka,Yasufumi Fujiwara,Naoki Hara,Tamotsu Hashizume,Hideki Hirayama,Mark Holmes,Yoshio Honda,Masataka Imura,Ryota Ishii,Yoshihiro Ishitani,Motoaki Iwaya,Satoshi Kamiyama,Yoshihiro Kangawa,Ryuji Katayama,Yoichi Kawakami,Takahiro Kawamura,Atsushi Kobayashi,Masaaki Kuzuhara,Koh Matsumoto,Yusuke Mori,Takashi Mukai,Hisashi Murakami,Hideaki Murotani,Satoshi Nakazawa,Narihito Okada,Yoshiki Saito,Akira Sakai,Hiroto Sekiguchi,Koji Shiozaki,Kanako Shojiki,Jun Suda,Tetsuya Takeuchi,Tomoyuki Tanikawa,Jun Tatebayashi,Shigetaka Tomiya,Yoichi Yamada,JAPANESE JOURNAL OF APPLIED PHYSICS,IOP PUBLISHING LTD,Vol. 58,2019年06月
  • Color-Tunablility in GaN LEDs Based on Atomic Emission Manipulation under Current Injection,Brandon Mitchell,Ruoqiao Wei,Junichi Takatsu,Dolf Timmerman,Tom Gregorkiewicz,Wanxin Zhu,Shuhei Ichikawa,Jun Tatebayashi,Yasufumi Fujiwara,Volkmar Dierolf,ACS Photonics,AMER CHEMICAL SOC,Vol. 6,No. 5,p. 1153-1161,2019年05月15日,研究論文(学術雑誌)
  • Broad range thickness identification of hexagonal boron nitride by colors,Yuto Anzai,Mahito Yamamoto,Shingo Genchi,Kenji Watanabe,Takashi Taniguchi,Shuhei Ichikawa,Yasufumi Fujiwara,Hidekazu Tanaka,Applied Physics Express,IOP PUBLISHING LTD,Vol. 12,No. 5,p. 055007-055007,2019年05月01日,研究論文(学術雑誌)
  • Defect compatible defect engineering of eu-doped gallium nitride for red LED applications,B. Mitchell,D. Timmerman,W. Zhu,Y. Fujiwara,V. Dierolf,Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015,2019年,研究論文(国際会議プロシーディングス)
  • Picosecond Time-Resolved Excitation Dynamics and Emission Manipulation of Eu3+ Ions Doped into GaN,Brandon Mitchell,Ruoqiao Wei,Dolf Timmerman,Tom Gregorkiewicz,Shuhei Ichikawa,Jun Tatebayashi,Volkmar Dierolf,Yasufumi Fujiwara,2019 COMPOUND SEMICONDUCTOR WEEK (CSW),IEEE,2019年,研究論文(国際会議プロシーディングス)
  • Control of the energy transfer between Tm3+ and Yb3+ ions in ZnO nanowires for photovoltaic applications,Jun Tatebayashi,Tokuhito Nakajima,Masao Mishina,Dolf Timmerman,Shuhei Ichikawa,Yasufumi Fujiwara,2019 COMPOUND SEMICONDUCTOR WEEK (CSW),IEEE,2019年,研究論文(国際会議プロシーディングス)
  • High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminated GaN(0001) surface,Shinya Yamada,Yuki Goto,Jun Tatebayashi,Shuhei Ichikawa,Yasufumi Fujiwara,Kohei Hamaya,2019 COMPOUND SEMICONDUCTOR WEEK (CSW),IEEE,2019年,研究論文(国際会議プロシーディングス)
  • Enhanced luminescence efficiency of GaN:Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles,Jun Tatebayashi,Tomoya Yamada,Tomohiro Inaba,Shuhei Ichikawa,Yasufumi Fujiwara,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 58,No. SC,p. SCC09/1-SCC09/6,2019年,研究論文(学術雑誌)
  • Formation and optical properties of Tm,Yb-codoped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition,J. Tatebayashi,G. Yoshii,T. Nakajima,M. Mishina,Y. Fujiwara,Journal of Crystal Growth,Vol. 503,p. 13-19,2018年12月01日,研究論文(学術雑誌)
  • Efficient carrier multiplication in CsPbI<inf>3</inf> perovskite nanocrystals,Chris de Weerd,Leyre Gomez,Antonio Capretti,Delphine M. Lebrun,Eiichi Matsubara,Junhao Lin,Masaaki Ashida,Frank C.M. Spoor,Laurens D.A. Siebbeles,Arjan J. Houtepen,Kazutomo Suenaga,Yasufumi Fujiwara,Tom Gregorkiewicz,Nature Communications,NATURE PUBLISHING GROUP,Vol. 9,No. 1,2018年12月01日,研究論文(学術雑誌)
  • Hot-carrier-mediated impact excitation of Er<sup>3+</sup> ions in SiO<inf>2</inf> sensitized by Si Nanocrystals,A. Lesage,D. Timmerman,D. M. Lebrun,Y. Fujiwara,T. Gregorkiewicz,Applied Physics Letters,Vol. 113,No. 3,2018年07月16日,研究論文(学術雑誌)
  • Effect of surface treatment of printed Ag Schottky contacts on n-GaN epitaxial layers using Ag nanoink: Two dimensional characterization by scanning internal photoemission microscopy,Kenji Shiojima,Yukiyasu Kashiwagi,Tasuku Shigemune,Atsushi Koizumi,Takanori Kojima,Masashi Saitoh,Takahiro Hasegawa,Masaya Chigane,Yasufumi Fujiwara,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 57,No. 7,2018年07月,研究論文(学術雑誌)
  • Measuring the practical particle-in-a-box: Orthorhombic perovskite nanocrystals,Brandon Mitchell,Eric Herrmann,Junhao Lin,Leyre Gomez,Chris De Weerd,Yasufumi Fujiwara,Kazutomo Suenaga,Tom Gregorkiewicz,European Journal of Physics,IOP PUBLISHING LTD,Vol. 39,No. 5,2018年06月27日,研究論文(学術雑誌)
  • Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals,M. O. Nestoklon,S. V. Goupalov,R. I. Dzhioev,O. S. Ken,V. L. Korenev,Yu G. Kusrayev,V. F. Sapega,C. De Weerd,L. Gomez,T. Gregorkiewicz,Junhao Lin,Kazutomo Suenaga,Yasufumi Fujiwara,L. B. Matyushkin,I. N. Yassievich,Physical Review B,AMER PHYSICAL SOC,Vol. 97,No. 23,2018年06月06日,研究論文(学術雑誌)
  • Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy,J. Takatsu,R. Fuji,J. Tatebayashi,D. Timmerman,A. Lesage,T. Gregorkiewicz,Y. Fujiwara,Journal of Applied Physics,Vol. 123,No. 16,2018年04月,研究論文(学術雑誌)
  • Control of the energy transfer between Tm<sup>3+</sup> and Yb<sup>3+</sup> ions in Tm,Yb-codoped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition,J. Tatebayashi,G. Yoshii,T. Nakajima,H. Kamei,J. Takatsu,D. M. Lebrun,Y. Fujiwara,Journal of Applied Physics,Vol. 123,No. 16,2018年04月,研究論文(学術雑誌)
  • Perspective: Toward efficient GaN-based red light emitting diodes using europium doping,Brandon Mitchell,Volkmar Dierolf,Tom Gregorkiewicz,Yasufumi Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 123,No. 16,2018年04月
  • Preface to Special Topic: Defects in Semiconductors,Tetsuya Yamamoto,Yasufumi Fujiwara,Kohei M. Itoh,Journal of Applied Physics,AMER INST PHYSICS,Vol. 123,No. 16,2018年04月,研究論文(学術雑誌)
  • Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy,Tomohiro Inaba,Takanori Kojima,Genki Yamashita,Eiichi Matsubara,Brandon Mitchell,Reina Miyagawa,Osamu Eryu,Jun Tatebayashi,Masaaki Ashida,Yasufumi Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 123,No. 16,2018年04月,研究論文(学術雑誌)
  • Re-Excitation of Trivalent Europium Ions Doped into Gallium Nitride Revealed through Photoluminescence under Pulsed Laser Excitation,Wanxin Zhu,Ruoqiao Wei,Dolf Timmerman,Tom Gregorkiewicz,Brandon Mitchell,Yasufumi Fujiwara,Volkmar Dierolf,ACS Photonics,AMER CHEMICAL SOC,Vol. 5,No. 3,p. 875-880,2018年03月21日,研究論文(学術雑誌)
  • Extraordinary Interfacial Stitching between Single All-Inorganic Perovskite Nanocrystals,Leyre Gomez,Junhao Lin,Chris De Weerd,Lucas Poirier,Simon C. Boehme,Elizabeth Von Hauff,Yasufumi Fujiwara,Kazutomo Suenaga,Tom Gregorkiewicz,ACS Applied Materials and Interfaces,AMER CHEMICAL SOC,Vol. 10,No. 6,p. 5984-5991,2018年02月14日,研究論文(学術雑誌)
  • Hybridization of Single Nanocrystals of Cs4PbBr6 and CsPbBr3 (vol 121, pg 19490, 2017),Chris de Weerd,Junhao Lin,Leyre Gomez,Yasufumi Fujiwara,Kazutomo Suenaga,Tom Gregorkiewicz,JOURNAL OF PHYSICAL CHEMISTRY C,AMER CHEMICAL SOC,Vol. 122,No. 7,p. 4116-4116,2018年02月
  • Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials FOREWORD,Shigeya Naritsuka,Seiichi Miyazaki,Yasufumi Fujiwara,Mineo Hiramatsu,Yasushi Inoue,Kenji Ishikawa,Masafumi Ito,Takashi Itoh,Makoto Kasu,Hideto Miyake,Minoru Sasaki,Tatsuru Shirafuji,Yoshiyuki Suda,JAPANESE JOURNAL OF APPLIED PHYSICS,IOP PUBLISHING LTD,Vol. 57,No. 1,2018年01月
  • Wavelength-stable and Narrow-band Red LED for monolithic micro-LED display,Yasufumi Fujiwara,Tomohiro Inaba,Keishi Shiomi,Shuhei Ichikawa,Jun Tatebayashi,Proceedings of the International Display Workshops,Vol. 1,p. 418-420,2018年,研究論文(国際会議プロシーディングス)
  • Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes,Ioannis E. Fragkos,Chee Keong Tan,Volkmar Dierolf,Yasufumi Fujiwara,Nelson Tansu,Scientific Reports,NATURE PUBLISHING GROUP,Vol. 7,No. 1,2017年12月01日,研究論文(学術雑誌)
  • Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes,Ioannis E. Fragkos,Volkmar Dierolf,Yasufumi Fujiwara,Nelson Tansu,Scientific Reports,NATURE PUBLISHING GROUP,Vol. 7,No. 1,2017年12月01日,研究論文(学術雑誌)
  • Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes,Ioannis E. Fragkos,Chee Keong Tan,Volkmar Dierolf,Yasufumi Fujiwara,Nelson Tansu,30th Annual Conference of the IEEE Photonics Society, IPC 2017,IEEE,Vol. 2017-January,p. 275-276,2017年11月20日,研究論文(国際会議プロシーディングス)
  • Hybridization of Single Nanocrystals of Cs<inf>4</inf>PbBr<inf>6</inf> and CsPbBr<inf>3</inf>,Chris De Weerd,Junhao Lin,Leyre Gomez,Yasufumi Fujiwara,Kazutomo Suenaga,Tom Gregorkiewicz,Journal of Physical Chemistry C,AMER CHEMICAL SOC,Vol. 121,No. 35,p. 19490-19496,2017年09月07日,研究論文(学術雑誌)
  • Charge state of vacancy defects in Eu-doped GaN,B. Mitchell,N. Hernandez,D. Lee,A. Koizumi,Y. Fujiwara,V. Dierolf,Physical Review B,Vol. 96,No. 6,2017年08月31日,研究論文(学術雑誌)
  • Detection of In segregation in InGaN by using Eu as a probe,Junichi Takatsu,Brandon Mitchell,Atsushi Koizumi,Shuhei Yamanaka,Masaaki Matsuda,Tom Gregorkiewicz,Takanori Kojima,Yasufumi Fujiwara,Journal of Crystal Growth,ELSEVIER SCIENCE BV,Vol. 468,p. 831-834,2017年06月15日,研究論文(学術雑誌)
  • Surface morphology and optical properties of Eu<sup>3+</sup> ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy,Ryoken Fuji,Brandon Mitchell,Atsushi Koizumi,Tomohiro Inaba,Yasufumi Fujiwara,Journal of Crystal Growth,ELSEVIER SCIENCE BV,Vol. 468,p. 862-865,2017年06月15日,研究論文(学術雑誌)
  • Synthesis and characterization of a liquid Eu precursor (EuCp<sup>pm</sup><inf>2</inf>) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy,Brandon Mitchell,Atsushi Koizumi,Takumi Nunokawa,Ryuta Wakamatsu,Dong gun Lee,Yasuhisa Saitoh,Dolf Timmerman,Yoshinori Kuboshima,Takayuki Mogi,Shintaro Higashi,Kaoru Kikukawa,Hironori Ofuchi,Tetsuo Honma,Yasufumi Fujiwara,Materials Chemistry and Physics,ELSEVIER SCIENCE SA,Vol. 193,p. 140-146,2017年06月01日,研究論文(学術雑誌)
  • Emission enhancement and its mechanism of Eu-doped GaN by strain engineering,Tomohiro Inaba,Brandon Mitchell,Atsushi Koizumi,Yasufumi Fujiwara,Optical Materials Express,OPTICAL SOC AMER,Vol. 7,No. 4,p. 1381-1387,2017年04月,研究論文(学術雑誌)
  • Multiexciton lifetime in all-inorganic CsPbBr<inf>3</inf> perovskite nanocrystals,Elinore M.L.D. De Jong,Genki Yamashita,Leyre Gomez,Masaaki Ashida,Yasufumi Fujiwara,Tom Gregorkiewicz,Journal of Physical Chemistry C,AMER CHEMICAL SOC,Vol. 121,No. 3,p. 1941-1947,2017年01月26日,研究論文(学術雑誌)
  • Dimerization of emission centers in Eu-doped GaN red light-emitting diode: Cooperative charge capturing using valence states coupling,Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara,Journal of Physics Condensed Matter,IOP PUBLISHING LTD,Vol. 29,No. 2,2017年01月18日,研究論文(学術雑誌)
  • High-Power Eu-Doped GaN Red LED Based on a Multilayer Structure Grown at Lower Temperatures by Organometallic Vapor Phase Epitaxy,W. Zhu,B. Mitchell,D. Timmerman,A. Koizumi,T. Gregorkiewicz,Y. Fujiwara,MRS Advances,Vol. 2,No. 3,p. 159-164,2017年,研究論文(国際会議プロシーディングス)
  • Investigation of high level injection state of PiN diodes by comparing simulation results and analytical theory,Tomohide Terashima,Yasufumi Fujiwara,IEEJ Transactions on Electronics, Information and Systems,Vol. 137,No. 7,p. 918-926,2017年,研究論文(学術雑誌)
  • An analytical investigation for the switching loss of power devices,Tomohide Terashima,Yasufumi Fujiwara,IEEJ Transactions on Electronics, Information and Systems,Vol. 137,No. 9,p. 1219-1227,2017年,研究論文(学術雑誌)
  • Advanced Plasma Science and Its Applications for Nitride and Nanomaterials FOREWORD,Takashi Itoh,Shigeya Naritsuka,Yasufumi Fujiwara,Mineo Hiramatsu,Makoto Kasu,Kazunori Koga,Hiroki Kondo,Koh Matsumoto,Osamu Nakatsuka,Kiichi Niitsu,Tomohiro Nozaki,Takayuki Ohta,Osamu Sakai,Hideki Sato,Tetsuya Takeuchi,Giichiro Uchida,JAPANESE JOURNAL OF APPLIED PHYSICS,IOP PUBLISHING LTD,Vol. 56,No. 1,2017年01月
  • Foreword: Advanced plasma science and its applications for nitride and nanomaterials,Takashi Itoh,Shigeya Naritsuka,Yasufumi Fujiwara,Mineo Hiramatsu,Makoto Kasu,Kazunori Koga,Hiroki Kondo,Koh Matsumoto,Osamu Nakatsuka,Kiichi Niitsu,Tomohiro Nozaki,Takayuki Ohta,Osamu Sakai,Hideki Sato,Tetsuya Takeuchi,Giichiro Uchida,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 56,No. 1,2017年01月,研究論文(学術雑誌)
  • Optical and Electrical Study of Defects in GaN In Situ Doped with Eu<sup>3+</sup> Ion Grown by OMVPE,Jingzhou Wang,Atsushi Koizumi,Yasufumi Fujiwara,Wojciech M. Jadwisienczak,Journal of Electronic Materials,SPRINGER,Vol. 45,No. 12,p. 6355-6362,2016年12月01日,研究論文(学術雑誌)
  • Direct Observation of Band Structure Modifications in Nanocrystals of CsPbBr<inf>3</inf> Perovskite,Junhao Lin,Leyre Gomez,Chris De Weerd,Yasufumi Fujiwara,Tom Gregorkiewicz,Kazutomo Suenaga,Nano Letters,AMER CHEMICAL SOC,Vol. 16,No. 11,p. 7198-7202,2016年11月09日,研究論文(学術雑誌)
  • Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 01 } and { 2 2 01 } InGaN/GaN quantum wells,Takanori Kojima,Shota Takano,Ryosuke Hasegawa,Dolf Timmerman,Atsushi Koizumi,Mitsuru Funato,Yoichi Kawakami,Yasufumi Fujiwara,Applied Physics Letters,AMER INST PHYSICS,Vol. 109,No. 18,2016年10月31日,研究論文(学術雑誌)
  • Direct electrode patterning on layered GaN on sapphire substrate by using needle-type dispenser system of Ag nanoinks,Y. Kashiwagi,M. Saitoh,T. Hasegawa,K. Matsukawa,T. Shigemune,A. Koizumi,T. Kojima,Y. Fujiwara,H. Kakiuchi,N. Aoyagi,Y. Yoshida,M. Nakamoto,2016 International Conference on Electronics Packaging, ICEP 2016,p. 129-132,2016年06月07日,研究論文(国際会議プロシーディングス)
  • Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method,Ngo Ngoc Ha,Atsushi Nishikawa,Yasufumi Fujiwara,Tom Gregorkiewicz,Journal of Science: Advanced Materials and Devices,VIETNAM NATL UNIV,Vol. 1,No. 2,p. 220-223,2016年06月,研究論文(学術雑誌)
  • Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment,W. Zhu,B. Mitchell,D. Timmerman,A. Uedono,A. Koizumi,Y. Fujiwara,APL Materials,Vol. 4,No. 5,2016年05月01日,研究論文(学術雑誌)
  • Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity,Tomohiro Inaba,Dong Gun Lee,Ryuta Wakamatsu,Takanori Kojima,Brandon Mitchell,Antonio Capretti,Tom Gregorkiewicz,Atsushi Koizumi,Yasufumi Fujiwara,AIP Advances,AMER INST PHYSICS,Vol. 6,No. 4,2016年04月,研究論文(学術雑誌)
  • Study of Defects in GaN In Situ Doped with Eu<sup>3+</sup> Ion Grown by OMVPE,Jingzhou Wang,Atsushi Koizumi,Yasufumi Fujiwara,Wojciech M. Jadwisienczak,Journal of Electronic Materials,SPRINGER,Vol. 45,No. 4,p. 2001-2007,2016年04月,研究論文(学術雑誌)
  • Growth of Eu-doped GaN and its magneto-optical properties,A. Koizumi,B. Mitchell,V. Dierolf,Y. Fujiwara,Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics,p. 259-280,2016年02月23日,論文集(書籍)内論文
  • Electron spin resonance studies of GaAs: Er,O,H. Ohta,S. Okubo,Y. Fujiwara,Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics,p. 169-194,2016年02月23日,論文集(書籍)内論文
  • Evaluation of crystallinity of GaN epitaxial layer after wafer dicing,Hideyuki Taguchi,Shugo Miyake,Atsushi Suzuki,Satoshi Kamiyama,Yasufumi Fujiwara,Materials Science in Semiconductor Processing,ELSEVIER SCI LTD,Vol. 41,p. 89-91,2016年01月29日,研究論文(学術雑誌)
  • Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity,Yasufumi Fujiwara,Tomohiro Inaba,Takanori Kojima,Atsushi Koizumi,2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015,Vol. 2,2016年01月07日,研究論文(国際会議プロシーディングス)
  • Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications,B. Mitchell,D. Timmerman,J. Poplawsky,W. Zhu,D. Lee,R. Wakamatsu,J. Takatsu,M. Matsuda,W. Guo,K. Lorenz,E. Alves,A. Koizumi,V. Dierolf,Y. Fujiwara,Scientific Reports,Vol. 6,2016年01月04日,研究論文(学術雑誌)
  • Foreword: Advanced plasma science and its applications for nitride and nanomaterials,Akihiro Wakahara,Osamu Nakatsuka,Minoru Sasaki,Kazuo Terashima,Hiroshi Amano,Takashi Egawa,Yasufumi Fujiwara,Mineo Hiramatsu,Ryoichi Ichino,Yasushi Inoue,Masafumi Ito,Makoto Kasu,Hiroki Kondo,Seiichi Miyazaki,Kazuaki Sawada,Makoto Sekine,Yuichi Setsuhara,Masaharu Shiratani,Hirofumi Takikawa,Yoshimi Watanabe,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 55,No. 1,2016年01月,研究論文(学術雑誌)
  • Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current,Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 55,No. 1,2016年01月,研究論文(学術雑誌)
  • Resonant energy transfer between Eu luminescent sites and their local geometry in GaN,Dolf Timmerman,Ryuta Wakamatsu,Kazuteru Tanaka,Dong Gun Lee,Atsushi Koizumi,Yasufumi Fujiwara,Applied Physics Letters,AMER INST PHYSICS,Vol. 107,No. 15,2015年10月12日,研究論文(学術雑誌)
  • Three-dimensional spectrum mapping of bright emission centers: Investigating the brightness-limiting process in Eu-doped GaN red light emitting diodes,Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara,Applied Physics Letters,AMER INST PHYSICS,Vol. 107,No. 8,2015年08月24日,研究論文(学術雑誌)
  • Fabrication and characterization of gan-based blue light-emitting diode with electrodes formed by screen printing,Tasuku Shigemune,Atsushi Koizumi,Yukiyasu Kashiwagi,Hiroshi Kakiuchi,Yasutaka Takemura,Shinya Furuta,Mari Yamamoto,Masashi Saitoh,Masanari Takahashi,Toshinobu Ohno,Masami Nakamoto,Nobuyoshi Aoyagi,Yukio Yoshida,Koichiro Murahashi,Kuniaki Otsuka,Yasufumi Fujiwara,Zairyo/Journal of the Society of Materials Science, Japan,Vol. 64,No. 5,p. 414-416,2015年05月01日,研究論文(学術雑誌)
  • Nanoscale determinant to brighten up GaN:Eu red light-emitting diode: Local potential of Eu-defect complexes,Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 117,No. 15,2015年04月,研究論文(学術雑誌)
  • In situ Eu doping into Al<inf>x</inf>Ga<inf>1-x</inf>N grown by organometallic vapor phase epitaxy to improve luminescence properties,Atsushi Koizumi,Kosuke Kawabata,Dong Gun Lee,Atsushi Nishikawa,Yoshikazu Terai,Hironori Ofuchi,Tetsuo Honma,Yasufumi Fujiwara,Optical Materials,ELSEVIER SCIENCE BV,Vol. 41,p. 75-79,2015年03月01日,研究論文(国際会議プロシーディングス)
  • Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy,Takanori Arai,Dolf Timmerman,Ryuta Wakamatsu,Dong Gun Lee,Atsushi Koizumi,Yasufumi Fujiwara,Journal of Luminescence,ELSEVIER SCIENCE BV,Vol. 158,p. 70-74,2015年02月,研究論文(学術雑誌)
  • Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film,Masaaki Nakayama,Satoshi Nakamura,Hideo Takeuchi,Atsushi Koizumi,Yasufumi Fujiwara,Applied Physics Letters,AMER INST PHYSICS,Vol. 106,No. 1,2015年01月05日,研究論文(学術雑誌)
  • Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode,Y. Kashiwagi,A. Koizumi,Y. Takemura,S. Furuta,M. Yamamoto,M. Saitoh,M. Takahashi,T. Ohno,Y. Fujiwara,K. Murahashi,K. Ohtsuka,M. Nakamoto,Applied Physics Letters,Vol. 105,No. 22,2014年12月01日,研究論文(学術雑誌)
  • Advanced plasma science and its applications for nitride and nanomaterials,Satoshi Kamiyama,Yasufumi Fujiwara,Mineo Hiramatsu,Masafumi Ito,Toshiro Kaneko,Makoto Kasu,Hideto Miyake,Keiji Nakamura,Kazuaki Sawada,Makoto Sekine,Yuichi Setsuhara,Tatsuru Shirafuji,Hirofumi Takikawa,Kazuo Terashima,Akihiro Wakahara,Yoshimi Watanabe,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 53,No. 11,2014年11月01日,研究論文(国際会議プロシーディングス)
  • Enhancement in light efficiency of a GaN:Eu red light-emitting diode by pulse-controlled injected charges,Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara,Applied Physics Letters,AMER INST PHYSICS,Vol. 105,No. 17,2014年10月27日,研究論文(学術雑誌)
  • Afterglow of Eu-related emission in Eu-doped gallium nitride grown by organometallic vapor phase epitaxy,R. Wakamatsu,D. Timmerman,D. Lee,A. Koizumi,Y. Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 116,No. 4,2014年07月28日,研究論文(学術雑誌)
  • Sputtering-assisted metal-organic chemical vapor deposition of Yb-doped ZnO for photonic conversion in Si solar cells,Ryutaro Okada,Wei Miao,Yoshikazu Terai,Takahiro Tsuji,Yasufumi Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,WILEY-V C H VERLAG GMBH,Vol. 11,No. 7-8,p. 1292-1295,2014年07月,研究論文(学術雑誌)
  • Optical excitation and external photoluminescence quantum efficiency of Eu<sup>3+</sup> in GaN,W. D.A.M. De Boer,C. McGonigle,T. Gregorkiewicz,Y. Fujiwara,S. Tanabe,P. Stallinga,Scientific Reports,Vol. 4,2014年06月10日,研究論文(学術雑誌)
  • The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers,B. Mitchell,J. Poplawsky,D. Lee,A. Koizumi,Y. Fujiwara,V. Dierolf,Journal of Applied Physics,AMER INST PHYSICS,Vol. 115,No. 20,2014年05月28日,研究論文(学術雑誌)
  • Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers,F. Elmasry,S. Okubo,H. Ohta,Y. Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 115,No. 19,2014年05月21日,研究論文(学術雑誌)
  • Thermodynamics and kinetics of three Mg-H-V N complexes in Mg:GaN from combined first-principles calculation and experiment,Donghwa Lee,Brandon Mitchell,Y. Fujiwara,V. Dierolf,Physical Review Letters,Vol. 112,No. 20,2014年05月20日,研究論文(学術雑誌)
  • Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy,Yasufumi Fujiwara,Volkmar Dierolf,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 53,No. 5 SPEC. ISSUE 1,2014年05月,研究論文(国際会議プロシーディングス)
  • Discrimination between energy transfer and back transfer processes for GaAs host and Er luminescent dopants using electric response analysis,Masashi Ishii,Atsushi Koizumi,Yoshikazu Takeda,Yasufumi Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 115,No. 13,2014年04月,研究論文(学術雑誌)
  • Analysis of crystalline in GaN epitaxial layer after the wafer dicing process,Hideyuki Taguchi,Amane Kitahara,Shugo Miyake,Akimitu Nakaue,Yasufumi Fujiwara,Palliative and Supportive Care,Vol. 1593,No. 1,2014年01月15日,研究論文(学術雑誌)
  • Speckle reduction by optimizing pulse width of drive current for red laser diodes,Takehiro Nishida,Tetsuya Yagi,Hiroshi Murata,Atsushi Koizumi,Yasufumi Fujiwara,Masayoshi Takemi,21st International Display Workshops 2014, IDW 2014,Vol. 2,p. 1098-1101,2014年,研究論文(国際会議プロシーディングス)
  • Defect roles in the excitation of Eu ions in Eu:GaN,Jonathan D. Poplawsky,Atsushi Nishikawa,Yasufumi Fujiwara,Volkmar Dierolf,Optics Express,OPTICAL SOC AMER,Vol. 21,No. 25,p. 30633-30641,2013年12月16日,研究論文(学術雑誌)
  • Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels,B. Mitchell,D. Lee,D. Lee,Y. Fujiwara,V. Dierolf,Applied Physics Letters,Vol. 103,No. 24,2013年12月09日,研究論文(学術雑誌)
  • Conduction properties of β-FeSi<inf>2</inf> epitaxial films with low carrier density,Yoshikazu Terai,Nozomu Suzuki,Keiichi Noda,Yasufumi Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,WILEY-V C H VERLAG GMBH,Vol. 10,No. 12,p. 1696-1698,2013年12月,研究論文(学術雑誌)
  • Formation of Eu<sup>3+</sup> luminescent centers in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition,Takahiro Tsuji,Yoshikazu Terai,Muhammad Hakim Bin Kamarudin,Yasufumi Fujiwara,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 52,No. 11 PART 1,2013年11月,研究論文(学術雑誌)
  • Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe,B. Mitchell,D. Lee,D. Lee,A. Koizumi,J. Poplawsky,Y. Fujiwara,V. Dierolf,Physical Review B - Condensed Matter and Materials Physics,Vol. 88,No. 12,2013年09月30日,研究論文(学術雑誌)
  • Luminescence properties of Eu-doped GaN grown on GaN substrate,Ryuta Wakamatsu,Dong Gun Lee,Atsushi Koizumi,Volkmar Dierolf,Yoshikazu Terai,Yasufumi Fujiwara,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 52,No. 8 PART 2,2013年08月,研究論文(学術雑誌)
  • Control of Eu luminescence centers by codoping of Mg and Si into Eu-doped GaN,Dong Gun Lee,Ryuta Wakamatsu,Atsushi Koizumi,Yoshikazu Terai,Yasufumi Fujiwara,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 52,No. 8 PART 2,2013年08月,研究論文(学術雑誌)
  • Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites,Ryuta Wakamatsu,Dong Gun Lee,Atsushi Koizumi,Volkmar Dierolf,Yasufumi Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 114,No. 4,2013年07月28日,研究論文(学術雑誌)
  • Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy,Dong Gun Lee,Ryuta Wakamatsu,Atsushi Koizumi,Yoshikazu Terai,Jonathan D. Poplawsky,Volkmar Dierolf,Yasufumi Fujiwara,Applied Physics Letters,AMER INST PHYSICS,Vol. 102,No. 14,2013年04月,研究論文(学術雑誌)
  • Analysis of crystalline in GaN epitaxial layer after the wafer dicing process,Hideyuki Taguchi,Amane Kitahara,Shugo Miyake,Akimitu Nakaue,Yasufumi Fujiwara,Materials Research Society Symposium Proceedings,Vol. 1593,2013年,研究論文(国際会議プロシーディングス)
  • Advanced materials design of rare-earth-doped semiconductors by organometallic vapor phase epitaxy,Yasufumi Fujiwara,Yoshikazu Terai,Atsushi Nishikawa,Progress in Advanced Structural and Functional Materials Design,p. 261-272,2013年01月01日,論文集(書籍)内論文
  • Electronic materials and nanotechnology for green environment,Junichi Motohisa,Yasufumi Fujiwara,Masakazu Sugiyama,Kiyoshi Yase,Seung Ki Joo,Jinho Ahn,Jeong Min Baik,Kyeong Jae Byeon,Sung Yoon Chung,Deok Kee Kim,Hyounwoo Kim,Ju Young Kim,Young Keun Kim,Ki Young Ko,Jung Hyuk Koh,Bon Heun Koo,Hee Chul Lee,Heon Lee,Jeong Hoon Lee,Sang Yeol Lee,Sunyoung Caroline Lee,Byungwoo Park,In Sung Park,Jeong Woong Park,Won Il Park,Wooyoung Yoon,Japanese Journal of Applied Physics,Vol. 52,No. 10 PART2,2013年,研究論文(学術雑誌)
  • Modification of Eu incorporation sites by the dissociation of hydrogen defect complexes in Mg and Eu Co-doped gallium nitride,B. Mitchell,J. Poplawsky,Y. Fujiwara,V. Dierolf,2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013,2013年,研究論文(国際会議プロシーディングス)
  • Dislocation generation in GaN by dicing process,Hideyuki Taguchi,Amane Kitahara,Syugo Miyake,Akimitu Nakaue,Atsushi Nishikawa,Yasufumi Fujiwara,Journal of Physics: Conference Series,IOP PUBLISHING LTD,Vol. 417,No. 1,2013年,研究論文(国際会議プロシーディングス)
  • Growth condition dependence of Ge-doped β-FeSi<inf>2</inf> epitaxial film by molecular beam epitaxy,Keiichi Noda,Yoshikazu Terai,Yasufumi Fujiwara,Journal of Crystal Growth,ELSEVIER SCIENCE BV,Vol. 378,p. 376-380,2013年,研究論文(学術雑誌)
  • Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition,Takahiro Tsuji,Yoshikazu Terai,Muhammad Hakim Bin Kamarudin,Kazuki Yoshida,Yasufumi Fujiwara,Journal of Luminescence,ELSEVIER SCIENCE BV,Vol. 132,No. 12,p. 3125-3128,2012年12月,研究論文(国際会議プロシーディングス)
  • Hybrid mesoporous-silica materials functionalized by Pt<sup>II</sup> complexes: Correlation between the spatial distribution of the active center, photoluminescence emission, and photocatalytic activity,Kohsuke Mori,Kentaro Watanabe,Yoshikazu Terai,Yasufumi Fujiwara,Hiromi Yamashita,Chemistry - A European Journal,WILEY-V C H VERLAG GMBH,Vol. 18,No. 36,p. 11371-11378,2012年09月03日,研究論文(学術雑誌)
  • Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition,Takahiro Tsuji,Yoshikazu Terai,Muhammad Hakim Bin Kamarudin,Masatoshi Kawabata,Yasufumi Fujiwara,Journal of Non-Crystalline Solids,ELSEVIER SCIENCE BV,Vol. 358,No. 17,p. 2443-2445,2012年09月01日,研究論文(国際会議プロシーディングス)
  • OMVPE法によるEu添加GaNの選択成長と発光特性評価,長谷川亮介,若松龍太,小泉淳,大渕博宣,一宮正義,李東建,寺井慶和,本間徹生,芦田昌明,藤原康文,2012年09月
  • Effect of residual impurities on transport properties of β-FeSi <inf>2</inf> epitaxial films grown by molecular beam epitaxy,Y. Terai,K. Yoneda,K. Noda,N. Miura,Y. Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 112,No. 1,2012年07月01日,研究論文(学術雑誌)
  • Eu luminescence center created by Mg codoping in Eu-doped GaN,Dong Gun Lee,Atsushi Nishikawa,Yoshikazu Terai,Yasufumi Fujiwara,Applied Physics Letters,AMER INST PHYSICS,Vol. 100,No. 17,2012年04月,研究論文(学術雑誌)
  • Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy,S. Emura,K. Higashi,A. Itadani,H. Torigoe,Y. Kuroda,A. Nishikawa,Y. Fujiwara,H. Asahi,Materials Research Society Symposium Proceedings,Vol. 1342,p. 15-20,2012年,研究論文(国際会議プロシーディングス)
  • Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy,Atsushi Nishikawa,Naoki Furukawa,Dong Gun Lee,Kosuke Kawabata,Takanori Matsuno,Yoshikazu Terai,Yasufumi Fujiwara,Materials Research Society Symposium Proceedings,Vol. 1342,p. 9-14,2012年,研究論文(国際会議プロシーディングス)
  • Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy,Jonathan Poplawsky,Nathaniel Woodward,Atsushi Nishikawa,Yasufumi Fujiwara,Volkmar Dierolf,Materials Research Society Symposium Proceedings,Vol. 1342,p. 21-26,2012年,研究論文(国際会議プロシーディングス)
  • Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy,K. Noda,Y. Terai,N. Miura,H. Udono,Y. Fujiwara,Physics Procedia,Vol. 23,p. 5-8,2012年,研究論文(国際会議プロシーディングス)
  • Site selective magneto-optical studies of Eu ions in gallium nitride,Nathaniel Woodward,Atsushi Nishikawa,Yasufumi Fujiwara,Volkmar Dierolf,Materials Research Society Symposium Proceedings,Vol. 1342,p. 111-115,2012年,研究論文(国際会議プロシーディングス)
  • Materials Research Society Symposium Proceedings: Preface,Volkmar Dierolf,Yasufumi Fujiwara,Tom Gregorkiewicz,Wojciech M. Jadwisienczak,Materials Research Society Symposium Proceedings,Vol. 1342,2012年,研究論文(国際会議プロシーディングス)
  • Recent progress in red LEDs with eu-doped GaN,Yasufumi Fujiwara,Advances in Optical Materials, AIOM 2012,2012年,研究論文(国際会議プロシーディングス)
  • Induced magnetic moment of Eu<sup>3+</sup> ions in GaN,V. Kachkanov,M. J. Wallace,G. Van Der Laan,S. S. Dhesi,S. A. Cavill,Y. Fujiwara,K. P. O'Donnell,Scientific Reports,Vol. 2,2012年,研究論文(学術雑誌)
  • Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy,Hajime Sasaki,Takayuki Hisaka,Kaoru Kadoiwa,Yoshikazu Terai,Yasufumi Fujiwara,IEICE Electronics Express,IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG,Vol. 9,No. 20,p. 1592-1597,2012年,研究論文(学術雑誌)
  • Optical Properties in Eu-doped GaN by Organometallic Vapor Phase Epitaxy and its Application to GaN-based Red Light-emitting Diodes,NISHIKAWA Atsushi,TERAI Yoshikazu,FUJIWARA Yasufumi,Journal of the Japanese Association of Crystal Growth,Vol. 38,No. 4,p. 270-273,2012年
  • Improvement of crystalline quality in GaAs layer grown on thermal cyclic annealed SOS,Kaoru Kadoiwa,Hajime Sasaki,Yoshikazu Terai,Yasufumi Fujiwara,Zairyo/Journal of the Society of Materials Science, Japan,Vol. 60,No. 11,p. 998-1003,2011年11月,研究論文(学術雑誌)
  • Energy structure of Er-2O center in GaAs:Er,O studied by high magnetic field photoluminescence measurement,Hiroyasu Katsuno,Hitoshi Ohta,Oliver Portugall,Nicolas Ubrig,Masashi Fujisawa,Fatma Elmasry,Susumu Okubo,Yasufumi Fujiwara,Journal of Luminescence,ELSEVIER SCIENCE BV,Vol. 131,No. 11,p. 2294-2298,2011年11月,研究論文(学術雑誌)
  • Bandgap modifications by lattice deformations in β-FeSi<inf>2</inf> epitaxial films,Y. Terai,K. Noda,K. Yoneda,H. Udono,Y. Maeda,Y. Fujiwara,Thin Solid Films,Vol. 519,No. 24,p. 8468-8472,2011年10月03日,研究論文(国際会議プロシーディングス)
  • ESD robustness improvement for integrated DMOS transistors -the different gate-voltage dependence of I<inf>t2</inf> between VDMOS and LDMOS transistors,Kenichi Hatasako,Fumitoshi Yamamoto,Akio Uenishi,Takashi Kuroi,Shigeto Maegawa,Yasufumi Fujiwara,IEEJ Transactions on Electrical and Electronic Engineering,WILEY,Vol. 6,No. 4,p. 361-366,2011年07月,研究論文(学術雑誌)
  • Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy,A. Nishikawa,N. Furukawa,T. Kawasaki,Y. Terai,Y. Fujiwara,Optical Materials,Vol. 33,No. 7,p. 1071-1074,2011年05月,研究論文(国際会議プロシーディングス)
  • Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers,N. Woodward,A. Nishikawa,Y. Fujiwara,V. Dierolf,Optical Materials,Vol. 33,No. 7,p. 1050-1054,2011年05月,研究論文(国際会議プロシーディングス)
  • Electron spin resonance study of photoluminescent material GaAs:Er,O-Er concentration effect,Masashi Fujisawa,Atsushi Asakura,Fatma Elmasry,Susumu Okubo,Hitoshi Ohta,Yasufumi Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 109,No. 5,2011年03月01日,研究論文(学術雑誌)
  • Fluorescence XAFS analysis of Eu-doped GaN layers grown by organometallic vapor phase epitaxy,Hironori Ofuchi,Tetsuo Honma,Takeshi Kawasaki,Naoki Furukawa,Atsushi Nishikawa,Yasufumi Fujiwara,e-Journal of Surface Science and Nanotechnology,Vol. 9,p. 51-53,2011年02月19日,研究論文(学術雑誌)
  • Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy,Naoki Furukawa,Atsushi Nishikawa,Takashi Kawasaki,Yoshikazu Terai,Yasufumi Fujiwara,Physica Status Solidi (A) Applications and Materials Science,WILEY-BLACKWELL,Vol. 208,No. 2,p. 445-448,2011年02月,研究論文(学術雑誌)
  • Photoluminescence properties of Eu<sup>3+</sup> ions in Eu-doped ZnO grown by sput- tering-assisted metalorganic chemical vapor deposition,Yoshikazu Terai,Kazuki Yoshida,M. H. Kamarudin,Yasufumi Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,WILEY-V C H VERLAG GMBH,Vol. 8,No. 2,p. 519-521,2011年02月,研究論文(学術雑誌)
  • Excitation of Eu<sup>3+</sup> in gallium nitride epitaxial layers: Majority versus trap defect center,N. Woodward,J. Poplawsky,B. Mitchell,A. Nishikawa,Y. Fujiwara,V. Dierolf,Applied Physics Letters,Vol. 98,No. 1,2011年01月03日,研究論文(学術雑誌)
  • Photoluminescence and photoreflectance studies in Si/β-FeSi <inf>2</inf>/Si(001) double heterostructure,K. Yoneda,Y. Terai,K. Noda,N. Miura,Y. Fujiwara,Physics Procedia,Vol. 11,p. 185-188,2011年,研究論文(国際会議プロシーディングス)
  • Temperature dependence of direct transition energies in β-FeSi <inf>2</inf> epitaxial films on Si(111) substrate,K. Noda,Y. Terai,K. Yoneda,Y. Fujiwara,Physics Procedia,Vol. 11,p. 181-184,2011年,研究論文(国際会議プロシーディングス)
  • Recent progress in red light-emitting diodes with Eu-Doped GaN,Yasufumi Fujiwara,Atsushi Nishikawa,Yoshikazu Terai,Proceedings of the International Display Workshops,INST IMAGE INFORMATION & TELEVISION ENGINEERS,Vol. 2,p. 721-724,2011年,研究論文(国際会議プロシーディングス)
  • Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy,K. Lorenz,E. Alves,I. S. Roqan,K. P. O'Donnell,A. Nishikawa,Y. Fujiwara,M. Boćkowski,Applied Physics Letters,Vol. 97,No. 11,2010年09月13日,研究論文(学術雑誌)
  • Growth temperature dependence of EU-doped GaN grown by organometallic vapor phase epitaxy,Atsushi Nishikawa,Takashi Kawasaki,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara,Zairyo/Journal of the Society of Materials Science, Japan,Vol. 59,No. 9,p. 671-674,2010年09月,研究論文(学術雑誌)
  • Photoluminescence properties of Eu-Doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition,Yoshikazu Terai,Kazuki Yoshida,Yasufumi Fujiwara,Zairyo/Journal of the Society of Materials Science, Japan,Vol. 59,No. 9,p. 690-693,2010年09月,研究論文(学術雑誌)
  • Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition,Y. Terai,K. Yamaoka,K. Yoshida,T. Tsuji,Y. Fujiwara,Physica E: Low-Dimensional Systems and Nanostructures,ELSEVIER SCIENCE BV,Vol. 42,No. 10,p. 2834-2836,2010年09月,研究論文(国際会議プロシーディングス)
  • Photoluminescence properties of Er-doped β-FeSi<inf>2</inf> grown by ion implantation,Y. Terai,T. Tsuji,K. Noda,Y. Fujiwara,Physica E: Low-Dimensional Systems and Nanostructures,ELSEVIER SCIENCE BV,Vol. 42,No. 10,p. 2846-2848,2010年09月,研究論文(国際会議プロシーディングス)
  • Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy,A. Nishikawa,N. Furukawa,T. Kawasaki,Y. Terai,Y. Fujiwara,Applied Physics Letters,AMER INST PHYSICS,Vol. 97,No. 5,2010年08月02日,研究論文(学術雑誌)
  • Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy,Yohei Konaka,Ken Ichi Ono,Yoshikazu Terai,Yasufumi Fujiwara,Journal of Crystal Growth,ELSEVIER SCIENCE BV,Vol. 312,No. 14,p. 2056-2059,2010年07月01日,研究論文(学術雑誌)
  • Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE,Atsushi Nishikawa,Takashi Kawasaki,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara,Physica Status Solidi (A) Applications and Materials Science,WILEY-V C H VERLAG GMBH,Vol. 207,No. 6,p. 1397-1399,2010年06月,研究論文(学術雑誌)
  • Photoluminescence measurement of Er,O-Codoped GaAs under a pulsed magnetic field up to 60 T,H. Ohta,O. Portugall,N. Ubrig,M. Fujisawa,H. Katsuno,E. Fatma,S. Okubo,Y. Fujiwara,Journal of Low Temperature Physics,Vol. 159,No. 1-2,p. 203-207,2010年04月,研究論文(学術雑誌)
  • Improved Eu luminescence properties in eu-doped gan grown on gan substrates by organometallic vapor phase epitaxy,Hitoshi Kasai,Atsushi Nishikawa,Takashi Kawasaki,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 49,No. 4 PART 1,p. 0480011-0480012,2010年04月,研究論文(学術雑誌)
  • Recent progress in rare-earth-doped semiconductors,Yasufumi Fujiwara,Atsushi Nishikawa,Yoshikazu Terai,2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010,2010年,研究論文(国際会議プロシーディングス)
  • Magnetic properties of magnetic semiconductor GaAs:Er,O studied by ESR,Masashi Fujisawa,Atsushi Asakura,Fatma Elmasry,Susumu Okubo,Hitoshi Ohta,Yasufumi Fujiwara,Journal of Physics: Conference Series,IOP PUBLISHING LTD,Vol. 200,No. SECTION 6,2010年,研究論文(国際会議プロシーディングス)
  • Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy,Takashi Kawasaki,Atsushi Nishikawa,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,WILEY-V C H VERLAG GMBH,Vol. 7,No. 7-8,p. 2040-2042,2010年,研究論文(国際会議プロシーディングス)
  • 希土類添加半導体の現状と将来展望,藤原康文,西川敦,寺井慶和,応用物理,Vol. 79,No. 1,p. 25-31,2010年01月
  • Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection,Atsushi Nishikawa,Takashi Kawasaki,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara,Applied Physics Express,IOP PUBLISHING LTD,Vol. 2,No. 7,2009年07月,研究論文(学術雑誌)
  • Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature,Yoshikazu Terai,Takehiro Tokuno,Hideki Ichida,Yasuo Kanematsu,Yasufumi Fujiwara,Optical Materials,ELSEVIER SCIENCE BV,Vol. 31,No. 9,p. 1323-1326,2009年07月,研究論文(学術雑誌)
  • Metaloraganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 μm photoluminescence,Keisuke Yamaoka,Yoshikazu Terai,Takashi Yamaguchi,Ha Ngoc Ngo,Tom Gregorkiewicz,Yasufumi Fujiwara,Journal of Physics: Conference Series,Vol. 165,2009年,研究論文(国際会議プロシーディングス)
  • Optical properties of Eu-implanted GaN and related-alloy semiconductors,A. Nishikawa,H. Kasai,T. Kawasaki,Y. Terai,Y. Fujiwara,Journal of Physics: Conference Series,Vol. 191,2009年,研究論文(国際会議プロシーディングス)
  • Low-temperature growth of GaAs with high quality by metalorganic vapor phase epitaxy,Harunori Sakaguchi,Tomoyoshi Mishima,Takeshi Meguro,Yasufumi Fujiwara,Journal of Physics: Conference Series,Vol. 165,2009年,研究論文(国際会議プロシーディングス)
  • Luminescence properties of Eu-implanted GaN-based semiconductors,H. Kasai,A. Nishikawa,Y. Terai,Y. Fujiwara,Journal of Physics: Conference Series,Vol. 165,2009年,研究論文(国際会議プロシーディングス)
  • Photoreflectance study of β-FeSi<inf>2</inf> epitaxial films grown by molecular beam epitaxy,Yoshikazu Terai,Keiichi Noda,Syoutaro Hashimoto,Yasufumi Fujiwara,Journal of Physics: Conference Series,Vol. 165,2009年,研究論文(国際会議プロシーディングス)
  • Development of new-type 1.5 μm light-emitting devices based on Er,O-codoped GaAs,Yasufumi Fujiwara,Yoshikazu Terai,Atsushi Nishikawa,Journal of Physics: Conference Series,Vol. 165,2009年,研究論文(国際会議プロシーディングス)
  • Epitaxial growth of Al-doped β-FeSi<inf>2</inf>on Si(111) substrate by reactive deposition epitaxy,Yoshikazu Terai,Syoutaro Hashimoto,Keiichi Noda,Yasufumi Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,Vol. 6,No. 6,p. 1488-1491,2009年,研究論文(国際会議プロシーディングス)
  • Luminescence properties in Er, O-codoped GaAs light-emitting devices with double excitation mechanism,Y. Fujiwara,K. Fujii,A. Fujita,Y. Ota,Y. Ito,T. Kawasaki,K. Noguchi,T. Tsuji,A. Nishikawa,Y. Terai,Materials Research Society Symposium Proceedings,Vol. 1111,p. 143-148,2009年,研究論文(国際会議プロシーディングス)
  • Modifications of direct transition energies in Β -FeSi2 epitaxial films grown by molecular beam epitaxy,K. Noda,Y. Terai,S. Hashimoto,K. Yoneda,Y. Fujiwara,Applied Physics Letters,AMER INST PHYSICS,Vol. 94,No. 24,2009年,研究論文(学術雑誌)
  • Epitaxial growth of Al-doped beta-FeSi(2) on Si(111) substrate by reactive deposition epitaxy,Yoshikazu Terai,Syoutaro Hashimoto,Keiichi Noda,Yasufumi Fujiwara,PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6,WILEY-V C H VERLAG GMBH,Vol. 6,No. 6,p. 1488-1491,2009年,研究論文(国際会議プロシーディングス)
  • Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition,Yoshikazu Terai,Keisuke Yamaoka,Takashi Yamaguchi,Yasufumi Fujiwara,Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,A V S AMER INST PHYSICS,Vol. 27,No. 5,p. 2248-2251,2009年,研究論文(学術雑誌)
  • Room-temperature deposition of highly-insulating SiOCH films by plasma-enhanced chemical vapor deposition using tetraethoxysilane,Keisuke Yamaoka,Yoshikazu Terai,Yuji Yoshizako,Yasufumi Fujiwara,Thin Solid Films,ELSEVIER SCIENCE SA,Vol. 517,No. 2,p. 479-482,2008年11月28日,研究論文(学術雑誌)
  • Organometallic vapor phase epitaxy of Er, O-codoped GaAs using tris(dipivaloylmethanato)erbium,Yoshikazu Terai,Keiji Hidaka,Takashi Hiramatsu,Yasufumi Fujiwara,Journal of Physics: Conference Series,IOP PUBLISHING LTD,Vol. 106,No. 1,p. 12007-12007,2008年03月01日,研究論文(学術雑誌)
  • Metalorganic vapor phase epitaxial growth parameter dependence of phase separation in miscibility gap of InGaAsP,Kenichi Ono,Masayoshi Takemi,Yasufumi Fujiwara,Japanese Journal of Applied Physics,IOP PUBLISHING LTD,Vol. 47,No. 2 PART 1,p. 896-898,2008年02月15日,研究論文(学術雑誌)
  • Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering,K. Yamaoka,Y. Terai,T. Yamaguchi,Y. Fujiwara,PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9,WILEY-V C H VERLAG GMBH,Vol. 5,No. 9,p. 3125-3127,2008年,研究論文(国際会議プロシーディングス)
  • Ultrafast photoexcited carrier dynamics in GaAs:Er,O by pump and probe transmission spectroscopy,K. Shimada,S. Takemoto,K. Hidaka,Y. Terai,M. Tonouchi,Y. Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,Vol. 5,No. 9,p. 2861-2863,2008年,研究論文(国際会議プロシーディングス)
  • GaAs emission from GaInP/Er,O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy,Kei Fujii,Keiji Hidaka,Dai Yamamoto,Yoshikazu Terai,Yasufumi Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,Vol. 5,No. 9,p. 2716-2718,2008年,研究論文(国際会議プロシーディングス)
  • Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering,K. Yamaoka,Y. Terai,T. Yamaguchi,Y. Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,Vol. 5,No. 9,p. 3125-3127,2008年,研究論文(国際会議プロシーディングス)
  • Improved initial epitaxial growth of β-FeSi2 on Si(111) substrate by Al-doping,Syoutaro Hashimoto,Yoshikazu Terai,Yasufumi Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,Vol. 5,No. 9,p. 3159-3161,2008年,研究論文(国際会議プロシーディングス)
  • GaAs emission from GaInP/Er, O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy,Kei Fujii,Keiji Hidaka,Dai Yamamoto,Yoshikazu Terai,Yasufumi Fujiwara,PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9,WILEY-V C H VERLAG GMBH,Vol. 5,No. 9,p. 2716-2718,2008年,研究論文(国際会議プロシーディングス)
  • Improved initial epitaxial growth of beta-FeSi2 on Si(111) substrate by Al-doping,Syoutaro Hashimoto,Yoshikazu Terai,Yasufumi Fujiwara,PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9,WILEY-V C H VERLAG GMBH,Vol. 5,No. 9,p. 3159-3161,2008年,研究論文(国際会議プロシーディングス)
  • Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy,K. Shimada,Y. Terai,S. Takemoto,K. Hidaka,Y. Fujiwara,M. Suzuki,M. Tonouchi,Applied Physics Letters,Vol. 92,No. 11,2008年,研究論文(学術雑誌)
  • Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy,Y. Terai,K. Hidaka,K. Fujii,S. Takemoto,M. Tonouchi,Y. Fujiwara,Applied Physics Letters,Vol. 93,No. 23,2008年,研究論文(学術雑誌)
  • Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy,A. Fujita,T. Tokuno,K. Hidaka,K. Fujii,K. Tachibana,H. Ichida,Y. Terai,Y. Kanematsu,Y. Fujiwara,Physica Status Solidi (C) Current Topics in Solid State Physics,Vol. 5,No. 9,p. 2864-2866,2008年,研究論文(国際会議プロシーディングス)
  • Ultrafast carrier trapping in Er-doped and Er,O-codoped GaAs revealed by pump and probe technique,Y. Fujiwara,S. Takemoto,K. Nakamura,K. Shimada,M. Suzuki,K. Hidaka,Y. Terai,M. Tonouchi,Physica B: Condensed Matter,ELSEVIER SCIENCE BV,Vol. 401-402,p. 234-237,2007年12月15日,研究論文(学術雑誌)
  • Edge-Light Backlight Unit Using Optically Patterned Film with Plural Light-Emitting Diodes Placed on Side as Light Source,Katsuya Fujisawa,Ikuo Onishi,Yasufumi Fujiwara,Japanese Journal of Applied Physics,IOP Publishing,Vol. 46,No. No. 38,p. L933-L935,2007年09月28日,研究論文(学術雑誌)
  • TEGa,TBAsを用いた有機金属気相エピタキシャル法による低温GaAsの作製,Keiji Hidaka,Takashi Hiramatsu,Yoshikazu Terai,Osamu Eryu,Yasufumi Fujiwara,材料,Vol. 56,No. 9,p. 880-885,2007年09月,研究論文(学術雑誌)
  • Nondestructive investigation of beta-FeSi2/Si interface by photoluminescence measurements,Yoshikazu Terai,Yoshihito Maeda,Yasufumi Fujiwara,Thin Solid Films,ELSEVIER SCIENCE SA,Vol. 515,No. 22,p. 8129-8132,2007年08月15日,研究論文(学術雑誌)
  • Growth of suspended single-walled carbon nanotubes by laser-irradiated chemical vapor deposition,Y. Asai,Y. Fujiwara,Y. Ohno,K. Maehashi,K. Inoue,K. Matsumoto,Journal of Physics: Conference Series,Vol. 61,No. 1,p. 46-50,2007年04月,研究論文(学術雑誌)
  • Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition,Kiyoshi Yasutake,Naotaka Tawara,Hiromasa Ohmi,Yoshikazu Terai,Hiroaki Kakiuchi,Heiji Watanabe,Yasufumi Fujiwara,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,INST PURE APPLIED PHYSICS,Vol. 46,No. 4 B,p. 2510-2515,2007年04月,研究論文(学術雑誌)
  • Effect of plasma gases on insulating properties of low-temperature-deposited SiOCH films prepared by remote plasma-enhanced chemical vapor deposition,Keisuke Yamaoka,Naomichi Okada,Yuji Yoshizako,Yoshikazu Terai,Yasufumi Fujiwara,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,INST PURE APPLIED PHYSICS,Vol. 46,No. 4B,p. 1997-2000,2007年04月,研究論文(学術雑誌)
  • Edge-light backlight unit using optically patterned film,Katsuya Fujisawa,Ikuo Onishi,Yasufumi Fujiwara,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,INST PURE APPLIED PHYSICS,Vol. 46,No. 1,p. 194-199,2007年01月10日,研究論文(学術雑誌)
  • Direct observation of picosecond-scale energy-transfer processes in Er,O-codoped GaAs by pump-probe reflection technique,Yasufumi Fujiwara,Kazuhiko Nakamura,Shouichi Takemoto,Jun Ichi Sugino,Yoshikazu Terai,Masato Suzuki,Masayoshi Tonouchi,AIP Conference Proceedings,AMER INST PHYSICS,Vol. 893,p. 245-246,2007年,研究論文(国際会議プロシーディングス)
  • Carrier dynamics in Er,O-codoped GaAs revealed by time-resolved terahertz emission measurements,K. Shimada,Y. Terai,S. Takemoto,M. Suzuki,M. Tonouchi,Y. Fujiwara,IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics,IEEE,p. 486-487,2007年,研究論文(国際会議プロシーディングス)
  • Characterization of epitaxial silicon films grown by atmospheric pressure plasma chemical vapor deposition using porous carbon electrode,Japanese Journal of Applied Physics,Vol. Vol. 46, No. 4B, pp. 2510-2515.,2007年
  • Low-temperature deposition of amorphous carbon films for surface passivation of carbon-doped silicon oxide,Keisuke Yamaoka,Yoshikazu Terai,Naomichi Okada,Takashi Yamaguchi,Yuji Yoshizako,Yasufumi Fujiwara,Advanced Materials Research,TRANS TECH PUBLICATIONS LTD,Vol. 24-25,p. 645-648,2007年,研究論文(国際会議プロシーディングス)
  • Magnetic properties of Er,O-codoped GaAs at low temperature,S. Takemoto,T. Terao,Y. Terai,M. Yoshida,A. Koizumi,H. Ohta,Y. Takeda,N. Fujimura,Y. Fujiwara,physica status solidi (c),Wiley,Vol. 3,No. 12,p. 4082-4085,2006年12月,研究論文(国際会議プロシーディングス)
  • Growth of bulk beta-FeSi2 crystals by annealing of well-aligned solidification structures,A Mishina,T Akahori,Y Terai,Yamauchi, I,Y Fujiwara,PHYSICA B-CONDENSED MATTER,ELSEVIER SCIENCE BV,Vol. 376,p. 795-798,2006年04月,研究論文(学術雑誌)
  • Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane,K Yamaoka,Y Yoshizako,H Kato,D Tsukiyama,Y Terai,Y Fujiwara,PHYSICA B-CONDENSED MATTER,ELSEVIER SCIENCE BV,Vol. 376,p. 399-402,2006年04月,研究論文(学術雑誌)
  • 固相反応によるバルクβ-FeSi2結晶生成用ロッド状整列共晶組織の形成とその方位解析,山内勇,三品明生,赤堀友彦,藤原康文,材料,Vol. 55,No. 2,p. 148-152,2006年02月,研究論文(学術雑誌)
  • Direct observation of trapping of photoexcited carriers in Er,O-codoped GaAs,Physica B,Vol. Vol. 376-377, pp. 556-559.,2006年
  • Photoluminescence enhancement of beta-FeSi2 crystals by optimizing Al doping concentration,Physica B,Vol. Vol. 376-377, pp. 799-802.,2006年
  • Thermal stability of SiOCH films deposited by room-temperature plasma-enhanced chemical vapor deposition using tetraethoxysilane,Keisuke Yamaoka,Yuji Yoshizako,Hideaki Kato,Daisuke Tsukiyama,Yoshikazu Terai,Yasufumi Fujiwara,Transactions of the Materials Research Society of Japan, Vol 31, No 2,ELSEVIER SCIENCE BV,Vol. 31,No. 2,p. 495-498,2006年,研究論文(国際会議プロシーディングス)
  • Behaviors of nonequilibrium carriers in Er,O-codoped GaAs for 1.5μm light-emitting devices with extremely stable wavelength,Yasufumi Fujiwara,Atsushi Koizumi,Kazuhiko Nakamura,Masato Suzuki,Yoshikazu Takeda,Masayoshi Tonouchi,Materials Science Forum,TRANS TECH PUBLICATIONS LTD,Vol. 512,p. 159-164,2006年,研究論文(国際会議プロシーディングス)
  • Plasma diagnosis of remote PECVD for SiOCH deposition at low temperature,Yuji Yoshizako,Daisuke Tsukiyama,Daisuke Nakamura,Keisuke Yamaoka,Yoshikazu Terai,Yasufumi Fujiwara,Transactions of the Materials Research Society of Japan,ELSEVIER SCIENCE BV,Vol. 31,No. 2,p. 499-502,2006年,研究論文(国際会議プロシーディングス)
  • Room-temperature operation of injection-type 1.5 μm light-emitting diodes with Er,O-codoped GaAs,Yasufumi Fujiwara,Materials Transactions,JAPAN INST METALS,Vol. 46,No. 9,p. 1969-1974,2005年09月,研究論文(学術雑誌)
  • Electron spin resonance study of Zn-codoping effect on the local structure of the Er -related centers in GaAs:Er,O,Makoto Yoshida,Kensaku Hiraka,Hitoshi Ohta,Yasufumi Fujiwara,Atsushi Koizumi,Yoshikazu Takeda,Journal of Applied Physics,AMER INST PHYSICS,Vol. 97,No. 2,p. 023909-1-023909-4,2005年01月15日,研究論文(学術雑誌)
  • Materials Research Society Symposium Proceedings: Preface,Tom Gregorkiewicz,Yasufumi Fujiwara,Michal Lipson,John M. Zavada,Materials Research Society Symposium Proceedings,Vol. 866,2005年,研究論文(国際会議プロシーディングス)
  • Erratum: Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/lnP multiple quantum wells (Applied Physics Letters (2004) 84 (4436)),I. Yamakawa,R. Oga,Y. Fujiwara,Y. Takeda,A. Nakamura,Applied Physics Letters,Vol. 85,No. 17,2004年10月25日,研究論文(学術雑誌)
  • Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy,Makoto Yoshida,Kensaku Hiraka,Hitoshi Ohta,Yasufumi Fujiwara,Atsushi Koizumi,Yoshikazu Takeda,Journal of Applied Physics,AIP Publishing,Vol. 96,No. 8,p. 4189-4196,2004年10月15日,研究論文(学術雑誌)
  • Fabrication of InAs quantum dots by droplet heteroepitaxy on periodic arrays of InP nanopyramids,Y. Yoshida,R. Oga,W.S. Lee,Y. Fujiwara,Y. Takeda,Thin Solid Films,Elsevier BV,Vol. 464-465,p. 240-243,2004年10月,研究論文(学術雑誌)
  • Interface structures of OMVPE-grown GaAs/GaInP/GaAs studied by X-ray CTR scattering measurement,M. Tabuchi,S. Hisadome,D. Katou,T. Yoshikane,A. Urakami,K. Inoue,A. Koizumi,Y. Fujiwara,Y. Takeda,Conference Proceedings - International Conference on Indium Phosphide and Related Materials,IEEE,p. 534-537,2003年,研究論文(国際会議プロシーディングス)
  • 1.54-μm spontaneous and stimulated emission of Er-2O centers in GaAs: Experiments and modeling,P. Eliseev,S. Gastev,A. Koizumi,Y. Fujiwara,Y. Takeda,Proceedings of SPIE-The International Society for Optical Engineering,SPIE-INT SOC OPTICAL ENGINEERING,Vol. 4645,p. 35-42,2002年,研究論文(学術雑誌)
  • ESR study of heavily doped GaAs : Er grown by organometallic vapor phase epitaxy,J Yoshikawa,S Okubo,H Ohta,T Koide,T Kawamoto,Y Fujiwara,Y Takeda,EPR IN THE 21ST CENTURY: BASICS AND APPLICATIONS TO MATERIAL, LIFE AND EARTH SCIENCES,ELSEVIER SCIENCE BV,p. 302-305,2002年,研究論文(国際会議プロシーディングス)
  • Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy,Yasufumi Fujiwara,Atsushi Koizumi,Kentaro Inoue,Akira Urakami,Taketoshi Yoshikane,Yoshikazu Takeda,Materials Research Society Symposium - Proceedings,MATERIALS RESEARCH SOC,Vol. 744,p. 149-154,2002年,研究論文(国際会議プロシーディングス)
  • Luminescence properties of Er,O-codoped InGaAs/GaAs MQW structures grown by OMVPE,A Koizumi,H Moriya,N Watanabe,Y Nonogaki,Y Fujiwara,Y Takeda,PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II,SPRINGER-VERLAG BERLIN,Vol. 87,p. 1389-1390,2001年,研究論文(国際会議プロシーディングス)
  • ”Formation of InGaAs dots on InP substrate with lattice-matching growth condition by droplet heteroepitaxy”,Y. Nonogaki,T. Iguchi,S. Fuchi,R. Oga,H. Moriya,Y. Fujiwara,Y. Takeda,『Institute of Physics Conference Series』(IOP Publishing),1999年06月,研究論文(学術雑誌)
  • Semimetal to semiconductor transition in ErP islands grown on InP(001) due to quantum-size effects,L Bolotov,T Tsuchiya,A Nakamura,T Ito,Y Fujiwara,Y Takeda,PHYSICAL REVIEW B,AMER PHYSICAL SOC,Vol. 59,No. 19,p. 12236-12239,1999年05月,研究論文(学術雑誌)
  • High thermal-stability of Er-related luminescence and atom configurations around Er atoms doped in InP by OMVPE growth,Y Fujiwara,T Ito,H Ofuchi,T Kawamoto,M Tabuchi,Y Takeda,COMPOUND SEMICONDUCTORS 1998,IOP PUBLISHING LTD,No. 162,p. 173-176,1999年,研究論文(学術雑誌)
  • Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy,Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda,Applied Surface Science,Vol. 130-132,p. 724-728,1998年06月,研究論文(学術雑誌)
  • Thermal diffusion of Er atoms δ-doped in InP,M. Tabuchi,K. Fujita,J. Tsuchiya,Y. Fujiwara,Y. Takeda,Applied Surface Science,ELSEVIER SCIENCE BV,Vol. 130-132,p. 393-397,1998年06月,研究論文(学術雑誌)
  • Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy,Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda,Applied Surface Science,Elsevier BV,Vol. 130-132,p. 724-728,1998年06月,研究論文(学術雑誌)
  • Local structure study of dilute Er in III-V semiconductors by fluorescence EXAFS,H. Ofuchi,D. Kawamura,J. Tsuchiya,N. Matsubara,M. Tabuchi,Y. Fujiwara,Y. Takeda,Journal of Synchrotron Radiation,Vol. 5,No. 3,p. 1061-1063,1998年05月01日,研究論文(学術雑誌)
  • Fabrication of InP submicron pillars for two-dimensional photonic crystals by reactive ion etching,Hitoshi Hatate,Masayuki Hashimoto,Hirofumi Shirakawa,Yasufumi Fujiwara,Yoshikazu Takeda,Hirohiko Nakano,Toshiaki Tatsuta,Osamu Tsuji,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,Vol. 37,No. 12 B,p. 7172-7176,1998年,研究論文(学術雑誌)
  • Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP,Y Fujiwara,T Ito,H Ofuchi,J Tsuchiya,A Tanigawa,M Tabuchi,Y Takeda,COMPOUND SEMICONDUCTORS 1997,IOP PUBLISHING LTD,Vol. 156,p. 199-202,1998年,研究論文(学術雑誌)
  • Formation of ErP islands on InP(001) surface by organometallic vapor phase epitaxy,Leonid Bolotov,Junji Tsuchiya,Yasufumi Fujiwara,Yoshikazu Takeda,Arao Nakamura,Japanese Journal of Applied Physics, Part 2: Letters,JAPAN SOC APPLIED PHYSICS,Vol. 36,No. 11 SUPPL. B,p. L1534-L1537,1997年11月15日,研究論文(学術雑誌)
  • Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP,Y. Fujiwara,T. Ito,H. Ofuchi,J. Tsuchiya,A. Tanigawa,M. Tabuchi,Y. Takeda,Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997,IEEE,p. 199-202,1997年,研究論文(国際会議プロシーディングス)
  • EXAFS and X-ray CTR scattering characterization of Er doped in InP by OMVPE,M. Tabuchi,D. Kawamura,K. Fujita,N. Matsubara,N. Yamada,H. Ofuchi,S. Ichiki,Y. Fujiwara,Y. Takeda,Materials Research Society Symposium - Proceedings,MATERIALS RESEARCH SOC,Vol. 422,p. 155-160,1996年,研究論文(国際会議プロシーディングス)
  • Erbium delta-doping to InP by OMVPE,Y Fujiwara,N Matsubara,J Yuhara,M Tabuchi,K Fujita,N Yamada,Y Nonogaki,Y Takeda,K Morita,COMPOUND SEMICONDUCTORS 1995,IOP PUBLISHING LTD,Vol. 145,p. 149-154,1996年,研究論文(学術雑誌)
  • Erbium doping to P-based III-V semiconductors by OMVPE with TBP as a non-toxic P source,Y. Fujiwara,Y. Ito,Y. Nonogaki,N. Matsubara,K. Fujita,Y. Takeda,Materials Science Forum,TRANSTEC PUBLICATIONS LTD,Vol. 196-201,No. pt 2,p. 621-626,1995年,研究論文(学術雑誌)
  • VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON,H NISHITANI,H NAKATA,T OHYAMA,Y FUJIWARA,SHALLOW IMPURITIES IN SEMICONDUCTORS,TRANS TECH PUBLICATIONS LTD,Vol. 117,p. 513-518,1993年,研究論文(国際会議プロシーディングス)
  • 高温超伝導体のルミネッセンス評価,藤原康文,小林猛,応用物理,Vol. 58,No. 1,p. 52-58,1989年
  • Thermally stimulated luminescence from high-T<inf>c</inf> superconducting Tl-Ba-Ca-Cu-O System,Yasufumi Fujiwara,Masayoshi Tonouchi,Takeshi Kobayashi,Japanese Journal of Applied Physics,JAPAN SOC APPLIED PHYSICS,Vol. 27,No. 9 A,p. L1706-L1708,1988年09月,研究論文(学術雑誌)
  • OXYGEN STOICHIOMETRY IN SUPERONDUCTIVE CERAMIC Er//1 Ba//2Cu//3O////y+ZZ,Tetsuro Takahashi,Masayoshi Tonouchi,Yasufumi Fujiwara,Takeshi Kobayashi,J Ceram Soc Jpn,Vol. 96,No. 4,p. 489-490,1988年,研究論文(学術雑誌)
  • High tc superconductivity of rf-sputtered er-ba-cu-o films,Masayoshi Tonouchi,Yuji Yoshizako,Tetsuro Takahashi,Yoshiyuki Sakaguchi,Sadamu Kita,Yasufumi Fujiwara,Takeshi Kobayashi,Japanese Journal of Applied Physics,JAPAN SOC APPLIED PHYSICS,Vol. 26,No. 9A,p. 1462-1464,1987年09月,研究論文(学術雑誌)
  • Oxygen deficiency in er1ba2cu3oy superconductive ceramics,Takeshi Kobayashi,Tetsuro Takahashi,Masayoshi Tonouchi,Yasufumi Fujiwara,Sadamu Kita,Japanese Journal of Applied Physics,Vol. 26,No. 8A,p. L1381-L1383,1987年08月,研究論文(学術雑誌)
  • Frequency dependence of ac josephson effect in point-contact (Y, Er) BaCuO/Nb,Sadamu Kita,Hisao Tanabe,Tetsuro Takahashi,Masayoshi Tonouchi,Yasufumi Fujiwara,Takeshi Kobayashi,Japanese Journal of Applied Physics,JAPAN SOC APPLIED PHYSICS,Vol. 26,No. 8A,p. L1353-L1355,1987年08月,研究論文(学術雑誌)
  • Hall coefficient of La-Sr-Cu oxide superconducting compound,Masayoshi Tonouchi,Yasufumi Fujiwara,Sadamu Kita,Takeshi Kobayashi,Masasuke Takata,Tsutomu Yamashita,Japanese Journal of Applied Physics,JAPAN J APPLIED PHYSICS,Vol. 26,No. 4 A,p. L519-L520,1987年04月,研究論文(学術雑誌)
  • 常温超伝導をめぐる動き,小林猛,藤原康文,化学と工業,Vol. 40,No. 12,p. 1025-1027,1987年
  • Radiant er-related luminescence of high tc superconducting er–ba–cu–o system,Yasufumi Fujiwara,Tetsuro Takahashi,Yoshito Fukumoto,Masayoshi Tonouchi,Takeshi Kobayashi,Japanese Journal of Applied Physics,JAPAN J APPLIED PHYSICS,Vol. 26,No. S3-3,p. 2123-2124,1987年01月,研究論文(学術雑誌)
  • Observation of a New Chromium-Related Complex in GaAs:Cr,Yasufumi Fujiwara,Yasushi Kita,Yoshiyuki Tonami,Taneo Nishino,Yoshihiro Hamakawa,Journal of the Physical Society of Japan,PHYSICAL SOCIETY JAPAN,Vol. 55,No. 11,p. 3741-3744,1986年11月,研究論文(学術雑誌)
  • Interface stress at znse/gaas:Cr heterostructure,Yasufumi Fujiwara,Sho Shirakata,Taneo Nishino,Yoshihiro Hamakawa,Shigeo Fujita,Japanese Journal of Applied Physics,JAPAN J APPLIED PHYSICS,Vol. 25,No. 11,p. 1628-1632,1986年11月,研究論文(学術雑誌)
  • Characterization of interface stress at InGaPAs/GaAs by cr-related luminescence line in GaAs,S. Shirakata,Y. Fujiwara,M. Kondo,T. Nishino,Y. Hamakawa,Journal of Electronic Materials,MINERALS METALS MATERIALS SOC,Vol. 15,No. 6,p. 323-329,1986年11月,研究論文(学術雑誌)
  • Measurements of residual stress in semi-insulating GaAs by Cr-related luminescence lines,Y. Fujiwara,T. Nishino,Y. Hamakawa,Applied Physics A Solids and Surfaces,Vol. 41,No. 2,p. 115-122,1986年10月,研究論文(学術雑誌)
  • MEASUREMENTS OF RESIDUAL-STRESS IN SEMIINSULATING GAAS BY CR-RELATED LUMINESCENCE LINES,Y FUJIWARA,T NISHINO,Y HAMAKAWA,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,SPRINGER VERLAG,Vol. 41,No. 2,p. 115-122,1986年10月,研究論文(学術雑誌)
  • Effects of in doping on cr-related luminescence in gaas,Yasufumi Fujiwara,Yasushi Kita,Yoshiyuki Tonami,Taneo Nishino,Yoshihiro Hamakawa,Japanese Journal of Applied Physics,JAPAN J APPLIED PHYSICS,Vol. 25,No. 3 A,p. L232-L234,1986年03月,研究論文(学術雑誌)
  • Observation of local lattice distortion induced by in doping in GaAs,Y. Fujiwara,Y. Kita,Y. Tonami,T. Nishino,Y. Hamakawa,Applied Physics Letters,AMER INST PHYSICS,Vol. 49,No. 3,p. 161-163,1986年,研究論文(学術雑誌)
  • フォトルミネッセンス法によるGaAs中の遷移金属の評価,藤原康文,西野種夫,濱川圭弘,応用物理,Vol. 54,No. 11,p. 1202-1207,1985年11月
  • In-depth profile measurements of cr-related luminescence lines in gaas,Yasufumi Fujiwara,Atsushi Kojima,Taneo Nishino,Yoshihiro Hamakawa,Japanese Journal of Applied Physics,JAPAN J APPLIED PHYSICS,Vol. 24,No. 11 R,p. 1479-1483,1985年11月,研究論文(学術雑誌)
  • PL法によるSI-GaAs基板の残留応力評価 【招待講演】,日本学術振興会第145委員会第27研究会資料 (1985) pp. 72-77.,1985年
  • 0.839 eV Cr-related luminescence center in GaAs:Cr,Y. Fujiwara,A. Kojima,T. Nishino,Y. Hamakawa,Journal of Luminescence,ELSEVIER SCIENCE BV,Vol. 31-32,No. PART 1,p. 451-453,1984年12月,研究論文(学術雑誌)
  • CHARACTERIZATION OF DEEP IMPURITIES IN GAAS BY PHOTOLUMINESCENCE,T NISHINO,Y FUJIWARA,A KOJIMA,Y HAMAKAWA,PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS,SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS,Vol. 452,p. 2-8,1984年,研究論文(学術雑誌)
  • Deep-level luminescence of cr-doped gaasp alloys,Yasufumi Fujiwara,Atsushi Kojima,Taneo Nishino,Yoshihiro Hamakawa,Japanese Journal of Applied Physics,JAPAN J APPLIED PHYSICS,Vol. 23,No. 1,p. 4-6,1984年01月,研究論文(学術雑誌)
  • PHOTOLUMINESCENCE AND LATTICE MISMATCH IN InGaAs/InP.,Tetsuya Yagi,Yasufumi Fujiwara,Taneo Nishino,Yoshihiro Hamakawa,Japanese Journal of Applied Physics, Part 2: Letters,JAPAN J APPLIED PHYSICS,Vol. 22,No. 7,p. 467-469,1983年07月,研究論文(学術雑誌)
  • DEEP-LEVEL LUMINESCENCE IN Ni-DIFFUSED GaAs.,Yasufumi Fujiwara,Atsushi Kojima,Taneo Nishino,Yoshihiro Hamakawa,Japanese Journal of Applied Physics, Part 2: Letters,JAPAN J APPLIED PHYSICS,Vol. 22,No. 7,p. L476-L478,1983年07月,研究論文(学術雑誌)
  • DEEP ACCEPTOR PHOTO-LUMINESCENCE IN GAAS,T NISHINO,Y FUJIWARA,Y HAMAKAWA,INSTITUTE OF PHYSICS CONFERENCE SERIES,EDITIONS SCIENTIFIQUES MEDICALES ELSEVIER,No. 65,p. 71-78,1983年,研究論文(学術雑誌)
  • Cr-related luminescence in GaAs:Cr,Y. Fujiwara,T. Nishino,Y. Hamakawa,Japanese Journal of Applied Physics,JAPAN J APPLIED PHYSICS,Vol. 21,No. 11,p. L727-L729,1982年11月,研究論文(学術雑誌)
  • PHOTO-LUMINESCENCE STUDIES OF ACCEPTOR IMPURITIES IN INGAASP,T NISHINO,Y YAMAZOE,K OHTSUKA,Y FUJIWARA,Y HAMAKAWA,INSTITUTE OF PHYSICS CONFERENCE SERIES,PLENUM PUBL CORP,No. 63,p. 149-154,1982年,研究論文(学術雑誌)

MISC

  • Epitaxial growth of spinel ferrite oxide (Al,Ru,Fe)3O4 on a GaAs(001) substrate using a MgO buffer layer,Teruo Kanki,Toshio Kawahara,Naoki Asakawa,Yasushi Hotta,Yoshikazu Terai,Yasufumi Fujiwara,Hitoshi Tabata,Tomoji Kawai,Materials Research Society Symposium Proceedings,Vol. 1034,p. 86-90,2008年,速報,短報,研究ノート等(学術雑誌)
  • Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5um light-emitting devices with extremely stable wavelength 【基調講演】,Yasufumi Fujiwara,Shouichi Takemoto,Takehiro Tokuno,Keiji Hidaka,Hideki Ichida,Masato Suzuki,Yoshikazu Terai,Yasuo Kanematsu,Masayoshi Tonouchi,2nd Workshop on Impurity Based Electroluminescence Devices and Materials (IBEDM 2006), F-17, Wakayama, Japan, October 17-20 (2006).,WILEY-V C H VERLAG GMBH,Vol. 205,No. 1,p. 64-67,2008年01月,研究発表ペーパー・要旨(国際会議)
  • Epitaxial growth of spinel ferrite oxide (Al,Ru,Fe)3O4 on a GaAs(001) substrate using a MgO buffer layer,2007年
  • Ⅲ-Ⅴ族化合物半導体光デバイスの新しい潮流 【招待講演】,日本金属学会セミナー「非シリコン半導体の現状と展望」 (2006) pp. 5-10.,2006年
  • Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface 【招待講演】,Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42.,2006年
  • Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃),Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095.,2006年
  • Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition,Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan.,2006年
  • 波長超安定新規半導体光源の開発 【招待講演】,第1回けいはんな新産業創出・交流センター シーズフォーラム~光科学が拓く有機材料・無機材料~、中之島センタービル、大阪市、11月15日 (2006).,2006年
  • Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface [Invited talk],Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42.,2006年
  • Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃),Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095.,2006年
  • Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition,Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan.,2006年
  • ESR study of Zn-codoping effect on the luminescence efficiency of the Er-2O center in GaAs:Er,O,M. Yoshida,K. Hiraka,H. Ohta,Y. Fujiwara,A. Koizumi,Y. Takeda,AIP Conference Proceedings,AMER INST PHYSICS,Vol. 772,p. 121-122,2005年06月30日
  • Pump and probe reflection study on photoexcited carrier dynamics in Er,O-codoped GaAs,Yasufumi Fujiwara,Kazuhiko Nakamura,Atsushi Koizumi,Yoshikazu Takeda,Masato Suzuki,Masayoshi Tonouchi,AIP Conference Proceedings,AMER INST PHYSICS,Vol. 772,p. 139-140,2005年06月30日
  • Terahertz radiation from Er,O-codoped GaAs surface,Masato Suzuki,Kazuhiko Nakamura,Yasufumi Fujiwara,Atsushi Koizumi,Yoshikazu Takeda,Masayoshi Tonouchi,AIP Conference Proceedings,AMER INST PHYSICS,Vol. 772,p. 131-132,2005年06月30日
  • Effects of S-doping and subsequent annealing on photoluminescence around 1.54 mu m from Er-containing ZnO,Z Zhou,N Sato,T Komaki,A Koizumi,T Komori,M Morinaga,Y Fujiwara,Y Takeda,PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5,TRANS TECH PUBLICATIONS LTD,Vol. 475-479,p. 1125-1128,2005年
  • Pump and probe reflection study on photoexcited carrier dynamics in Er,O-codoped GaAs,AIP Conference Proceedings, Physics of Semiconductors, edited by J. Menendez and C. G. Van de Walle (AIP, New York, 2005),Vol. Vol. 772, pp. 139-140.,2005年
  • Terahertz radiation from Er,O-codoped GaAs surface,AIP Conference Proceedings, Physics of Semiconductors, Vol. 772, edited by J. Menendez and C. G. Van de Walle (AIP, New York, 2005),Vol. Vol. 772, pp. 131-132.,2005年
  • Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique,Yasufumi Fujiwara,Kazuhiko Nakamura,Shoichi Takemoto,Yoshikazu Terai,Masato Suzuki,Atsushi Koizumi,Yoshikazu Takeda,Masayoshi Tonouchi,Materials Research Society Symposium Proceedings,MATERIALS RESEARCH SOCIETY,Vol. 866,p. 79-83,2005年
  • Investigation of b-FeSi2/Si heterostructures by photoluminescence with different optical configurations,Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials (2005) pp. 330-331.,2005年
  • Effects of S-doping and subsequent annealing on photoluminescence around 1.54 mu m from Er-containing ZnO,Z Zhou,N Sato,T Komaki,A Koizumi,T Komori,M Morinaga,Y Fujiwara,Y Takeda,PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5,TRANS TECH PUBLICATIONS LTD,Vol. 475-479,p. 1125-1128,2005年
  • ESR study of Zn codoping effect on the luminescence efficiency of the Er-2O center in GaAs:Er,O,AIP Conference Proceedings, Physics of Semiconductors, edited by J. Menendez and C. G. Van de Walle (AIP, New York, 2005),Vol. Vol. 772, pp.121-122.,2005年
  • Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique,Materials Research Society Symposium Proceedings, Rare-Earth Doping for Optoelectronic Applications, edited by T. Gregorkiewicz, Y. Fujiwara, M. Lipson and J. M. Zavada (Materials Research Society, Pittsburgh, 2005),Vol. Vol. 866, pp. 79-83.,2005年
  • Investigation of b-FeSi2/Si heterostructures by photoluminescence with different optical configurations,Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials (2005) pp. 330-331.,2005年
  • Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO,Zhen Zhou,N. Sato,T. Komaki,A. Koizumi,T. Komori,M. Morinaga,Y. Fujiwara,Y. Takeda,Materials Science Forum,TRANS TECH PUBLICATIONS LTD,Vol. 475-479,No. II,p. 1125-1128,2005年
  • Effects of growth sequence on atomic level interfacial structures and characteristics of gainp/gaas/gainp double heterostructures grown by low-pressure organometallic vapor phase epitaxy,T. Yoshikane,A. Urakami,A. Koizumi,S. Hisadome,M. Tabuchi,K. Inoue,Y. Fujiwara,Y. Takeda,Applied Surface Science,ELSEVIER SCIENCE BV,Vol. 237,No. 1-4,p. 246-250,2004年10月15日,記事・総説・解説・論説等(学術雑誌)
  • Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/InP multiple quantum wells (vol 84, pg 4436, 2004),Yamakawa, I,R Oga,Y Fujiwara,Y Takeda,A Nakamura,APPLIED PHYSICS LETTERS,AMER INST PHYSICS,Vol. 85,No. 17,p. 3938-3938,2004年10月
  • Photoluminescence around 1.54 μm from Er-containing ZnO at room temperature,Zhen Zhou,Takanao Komaki,Atsushi Koizumi,Toshitaka Komori,Masahito Yoshino,Masahiko Morinaga,Yasufumi Fujiwara,Yoshikazu Takeda,Materials Transactions,JAPAN INST METALS,Vol. 45,No. 7,p. 2003-2007,2004年07月
  • Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/InP multiple quantum wells,I. Yamakawa,R. Oga,Y. Fujiwara,Y. Takeda,A. Nakamura,Applied Physics Letters,AMER INST PHYSICS,Vol. 84,No. 22,p. 4436-4438,2004年05月31日
  • Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/InP multiple quantum wells,Yamakawa, I,R Oga,Y Fujiwara,Y Takeda,A Nakamura,APPLIED PHYSICS LETTERS,AMER INST PHYSICS,Vol. 84,No. 22,p. 4436-4438,2004年05月
  • Composition dependence of energy structure and lattice structure in InGaAs/GaP,S Fuchi,Y Nonogaki,H Moriya,A Koizumi,Y Fujiwara,Y Takeda,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,ELSEVIER SCIENCE BV,Vol. 21,No. 1,p. 36-44,2004年02月
  • Composition dependence of energy structure and lattice structure in InGaAs/GaP,S Fuchi,Y Nonogaki,H Moriya,A Koizumi,Y Fujiwara,Y Takeda,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,ELSEVIER SCIENCE BV,Vol. 21,No. 1,p. 36-44,2004年02月
  • Composition dependence of energy structure and lattice structure in InGaAs/GaP,Shingo Fuchi,Youichi Nonogaki,Hiromitsu Moriya,Atsushi Koizumi,Yasufumi Fujiwara,Yoshikazu Takeda,Physica E: Low-Dimensional Systems and Nanostructures,ELSEVIER SCIENCE BV,Vol. 21,No. 1,p. 36-44,2004年02月
  • 希土類添加Ⅲ-Ⅴ族半導体による電流注入型発光デバイス,応用物理,Vol. Vol. 73, No. 2, pp. 224-228.,2004年
  • 希土類元素発光中心の形成と光デバイスへの展開―結晶成長による原子配置の制御とデバイス作製―,マテリア,Vol. Vol. 43, No. 4, pp. 312-317.,2004年
  • 希土類添加Ⅲ-Ⅴ族半導体の新展開:秩序制御と量子機能 【招待講演】,第16回日本材料学会半導体エレクトロニクス部門研究会(大阪大学待兼山会館、豊中市) (2004).,2004年
  • Photoluminescence around 1.54 μm from Er-containing ZnO at room temperature,Zhen Zhou,Takanao Komaki,Toshitaka Komori,Atsushi Koizumi,Masahito Yoshino,Noriaki Matsunami,Yoshikazu Takeda,Masahiko Morinaga,Materials Transactions,Japan Institute of Metals (JIM),Vol. 45,No. 9,p. 2906-2908,2004年
  • 希土類添加化合物半導体からの波長超安定発光と光デバイス展開 【招待講演】,日本金属学会2004年秋期(第135回)大会 材料戦略セッション3「化合物半導体材料の現状と展望」(秋田大学、秋田市) R12 (2004) p. 602.,2004年
  • 希土類添加半導体を用いた電流注入型波長超安定発光デバイスの開発 【招待講演】,第65回応用物理学会学術講演会「半導体B」分科内招待講演(東北学院大学、仙台市) 3p-ZL-1 (2004) p. 1290.,2004年
  • Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure OMVPE,Applied Surface Science,Vol. Vol. 237, pp. 246-250.,2004年
  • キド・ワールドに魅せられて~波長超安定光源の開発を夢見て~,The News of Engineering, Osaka University, Vol 28 (2004) p. 3.,2004年
  • "希土類添加Ⅲ-Ⅴ族半導体による電流注入型発光デバイス",応用物理,Vol. 73,No. 2,p. 224-228,2004年
  • "希土類元素発光中心の形成と光デバイスへの展開 -結晶成長による原子配置の制御とデバイス作製-",竹田 美和,藤原 康文,田渕 雅夫,大渕 博宣,まてりあ,Vol. 43,No. 4,p. 312-317,2004年
  • Injection-type light-emitting devices using rare-earth-doped III-V semiconductors,応用物理,Vol. Vol. 73, No. 2, pp. 224-228.,2004年
  • Development of light sources with extremely stable wavelength,The News of Engineering, Osaka University, Vol 28 (2004) p. 3.,2004年
  • Effects of active layer thickness on Er excitation cross section in GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes,A. Koizumi,Y. Fujiwara,A. Urakami,K. Inoue,T. Yoshikane,Y. Takeda,Physica B: Condensed Matter,ELSEVIER SCIENCE BV,Vol. 340-342,p. 309-314,2003年12月31日
  • Room temperature 1.5 μm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy,Y. Fujiwara,A. Koizumi,A. Urakami,T. Yoshikane,K. Inoue,Y. Takeda,Materials Science and Engineering B: Solid-State Materials for Advanced Technology,ELSEVIER SCIENCE SA,Vol. 105,No. 1-3,p. 57-60,2003年12月15日
  • Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy,A Koizumi,Y Fujiwara,A Urakami,K Inoue,T Yoshikane,Y Takeda,APPLIED PHYSICS LETTERS,AMER INST PHYSICS,Vol. 83,No. 22,p. 4521-4523,2003年12月
  • Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy,A. Koizumi,Y. Fujiwara,A. Urakami,K. Inoue,T. Yoshikane,Y. Takeda,Applied Physics Letters,AMER INST PHYSICS,Vol. 83,No. 22,p. 4521-4523,2003年12月01日
  • AFM observation of OMVPE grown ErP on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates,T. Kuno,T. Akane,S. Jinno,T. Hirata,Y. Yang,Y. Isogai,N. Watanabe,Y. Fujiwara,A. Nakamura,Y. Takeda,Materials Science in Semiconductor Processing,ELSEVIER SCI LTD,Vol. 6,No. 5-6,p. 461-464,2003年10月
  • AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates,T Kuno,T Akane,S Jinno,T Hirata,Y Yang,Y Isogai,N Watanabe,Y Fujiwara,A Nakamura,Y Takeda,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,ELSEVIER SCI LTD,Vol. 6,No. 5-6,p. 461-464,2003年10月
  • AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates,T Kuno,T Akane,S Jinno,T Hirata,Y Yang,Y Isogai,N Watanabe,Y Fujiwara,A Nakamura,Y Takeda,MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,ELSEVIER SCI LTD,Vol. 6,No. 5-6,p. 461-464,2003年10月
  • Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)<inf>3</inf>,H. Ofuchi,T. Akane,S. Jinno,T. Kuno,T. Hirata,M. Tabuchi,Y. Fujiwara,Y. Takeda,A. Nakamura,Materials Science in Semiconductor Processing,ELSEVIER SCI LTD,Vol. 6,No. 5-6,p. 469-472,2003年10月
  • SEM observation of InP/ErP/InP double heterostructures grown on InP(0 0 1), InP(1 1 1)A, and InP(1 1 1)B,T. Hirata,T. Akane,S. Jinno,T. Kuno,Y. Yang,Y. Fujiwara,A. Nakamura,Y. Takeda,Materials Science in Semiconductor Processing,ELSEVIER SCI LTD,Vol. 6,No. 5-6,p. 473-476,2003年10月
  • Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy,Ryo Oga,Woo Sik Lee,Yoshihiro Yoshida,Yasufumi Fujiwara,Yoshikazu Takeda,Materials Science in Semiconductor Processing,ELSEVIER SCI LTD,Vol. 6,No. 5-6,p. 477-480,2003年10月
  • AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp) <inf>3</inf> ),T. Akane,S. Jinno,Y. Yang,T. Kuno,T. Hirata,Y. Isogai,N. Watanabe,Y. Fujiwara,A. Nakamura,Y. Takeda,Applied Surface Science,ELSEVIER SCIENCE BV,Vol. 216,No. 1-4 SPEC.,p. 537-541,2003年06月30日
  • Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy,A. Koizumi,Y. Fujiwara,K. Inoue,T. Yoshikane,A. Urakami,Y. Takeda,Applied Surface Science,ELSEVIER SCIENCE BV,Vol. 216,No. 1-4 SPEC.,p. 560-563,2003年06月30日
  • Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy,Yasufumi Fujiwara,Yoichi Nonogaki,Ryo Oga,Atsushi Koizumi,Yoshikazu Takeda,Applied Surface Science,ELSEVIER SCIENCE BV,Vol. 216,No. 1-4 SPEC.,p. 564-568,2003年06月30日
  • White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heteroepitaxy,R. Oga,W. S. Lee,Y. Fujiwara,Y. Takeda,Applied Physics Letters,AMER INST PHYSICS,Vol. 82,No. 25,p. 4546-4548,2003年06月23日
  • Room-temperature 1.54 μm light emission from Er,O-codoped GaAs/GaInP light-emitting diodes grown by low-pressure organometallic vapor phase epitaxy,Atsushi Koizumi,Yasufumi Fujiwara,Kentaro Inoue,Akira Urakami,Taketoshi Yoshikane,Yoshikazu Takeda,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,JAPAN SOC APPLIED PHYSICS,Vol. 42,No. 4 B,p. 2223-2225,2003年04月
  • Cross-sectional scanning tunneling microscopy study of interfacial roughness in an InGaAs/InP multiple quantum well structure grown by metalorganic vapor phase epitaxy,Ichirou Yamakawa,Takeshi Yamauchi,Ryo Oga,Yasufumi Fujiwara,Yoshikazu Takeda,Arao Nakamura,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,INST PURE APPLIED PHYSICS,Vol. 42,No. 4 A,p. 1548-1551,2003年04月
  • Room-temperature electroluminescence at 1.55μm from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy,R. Oga,W. S. Lee,Y. Fujiwara,Y. Takeda,Proceedings of SPIE - The International Society for Optical Engineering,Vol. 5023,p. 15-18,2003年
  • Effects of active layer thickness on Er excitation cross section in GaInP/GaAs:Er,O /GaInP DH structure light-emitting diodes,Physica B,Vol. Vol. 340-342, pp. 309-314.,2003年
  • Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light emitting diodes grown by organometallic vapor phase epitaxy,Applied Physics Letters,Vol. Vol. 83, No. 22, pp. 4521-4523.,2003年
  • "Effects of active layer thickness on Er excitation cross section in GaInP/GaAs:Er,O /GaInP DH structure light-emitting diodes",Physica B,Vol. 340-342,2003年
  • Femtosecond laser spectroscopy of In<inf>0.53</inf>Ga<inf>0.47</inf>As/InP multiple quantum wells: Interfacial roughness and photoexcited carrier relaxation,A. Nakamura,K. Tanase,I. Yamakawa,T. Yamauchi,Y. Hamanaka,R. Oga,Y. Fujiwara,Y. Takeda,Journal of Luminescence,ELSEVIER SCIENCE BV,Vol. 100,No. 1-4,p. 259-267,2002年12月
  • Cathodoluminescence study of selective epitaxial growth of In<inf>x</inf>Ga<inf>1-x</inf>As (x ∼ 0.53) thin quantum wells on InP pyramid structures on a masked substrate,Ichirou Yamakawa,Ryo Oga,Yoichi Nonogaki,Yasufumi Fujiwara,Yoshikazu Takeda,Arao Nakamura,Journal of Crystal Growth,ELSEVIER SCIENCE BV,Vol. 241,No. 1-2,p. 85-92,2002年05月
  • Improved size control of InP nanopyramids by selective-area flow rate modulation epitaxy,R. Oga,S. Yamamoto,I. Ohzawa,Y. Fujiwara,Y. Takeda,Journal of Crystal Growth,ELSEVIER SCIENCE BV,Vol. 237-239,No. 1-4 I,p. 239-243,2002年04月
  • Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy,A. Koizumi,H. Moriya,N. Watanabe,Y. Nonogaki,Y. Fujiwara,Y. Takeda,Applied Physics Letters,AMER INST PHYSICS,Vol. 80,No. 9,p. 1559-1561,2002年03月04日
  • Droplet hetero-epitaxy of InAs quantum structures on InP nanopyramids formed by selective-area flow rate modulation epitaxy,Ryo Oga,Syunsuke Yamamoto,Itsuya Ohzawa,Yasufumi Fujiwara,Yoshikazu Takeda,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,JAPAN SOC APPLIED PHYSICS,Vol. 41,No. 2 B,p. 1026-1029,2002年02月
  • 講演会報告[第62回応用物理学会学術講演会(2001年)],応用物理 71(1) (2002) p. 101.,2002年
  • 講演会報告[第49回応用物理学関係連合講演会(2002年)],応用物理 71(6) (2002) pp. 742-743.,2002年
  • 1.54um light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy,Extendedn Abstracts of the 21th Electronic Materials Symposium (2002) pp. 221-222.,2002年
  • Interfacial roughness of InGaAs/InP multiple quantum well structures grown by OMVPE: A cross-sectional scanning tunneling microscopy study,Proceedings of the 26th International Conference on Physics of Semiconductors (ICPS-26, Edinburgh, UK, July 29-August 2, 2002).,2002年
  • 1.54um light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy,Extendedn Abstracts of the 21th Electronic Materials Symposium (2002) pp. 221-222.,2002年
  • Room-temperature electroluminescence at 1.55um from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy,Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology (St. Petersburg, Russia, June 17-21, 2002) pp. 16-19.,2002年
  • Interfacial roughness of InGaAs/InP multiple quantum well structures grown by OMVPE: A cross-sectional scanning tunneling microscopy study,Proceedings of the 26th International Conference on Physics of Semiconductors (ICPS-26, Edinburgh, UK, July 29-August 2, 2002).,2002年
  • Luminescence properties of Dy-doped GaAs grown by organometallic vapor phase epitaxy,Y. Fujiwara,T. Koide,S. Jinno,Y. Isogai,Y. Takeda,Physica B: Condensed Matter,ELSEVIER SCIENCE BV,Vol. 308-310,p. 796-799,2001年12月
  • Luminescence properties of Er,O-codoped GaAs/GaInP double heterostructures grown by organometallic vapor phase epitaxy,A. Koizumi,N. Watanabe,K. Inoue,Y. Fujiwara,Y. Takeda,Physica B: Condensed Matter,ELSEVIER SCIENCE BV,Vol. 308-310,p. 891-894,2001年12月
  • Stimulated emission from GaAs : Er, O at 1538 nm,P. G. Eliseev,S. V. Gastev,A. Koizumi,Y. Fujiwara,Y. Takeda,Quantum Electronics,TURPION LTD,Vol. 31,No. 11,p. 962-964,2001年11月
  • OMVPE growth and properties of Dy-doped III-V semiconductors,T. Koide,Y. Isogai,Y. Fujiwara,Y. Takeda,Physica E: Low-Dimensional Systems and Nanostructures,ELSEVIER SCIENCE BV,Vol. 10,No. 1-3,p. 406-410,2001年05月
  • Codoping effect of O<inf>2</inf> into Er-doped InP epitaxial layers grown by OMVPE,H. Ohta,C. Urakawa,Y. Nakashima,J. Yoshikawa,T. Koide,T. Kawamoto,Y. Fujiwara,Y. Takeda,Physica E: Low-Dimensional Systems and Nanostructures,ELSEVIER SCIENCE BV,Vol. 10,No. 1-3,p. 399-402,2001年05月
  • ESR study of GaAs:Er codoped with oxygen grown by organometallic vapor phase epitaxy,J. Yoshikawa,C. Urakawa,H. Ohta,T. Koide,T. Kawamoto,Y. Fujiwara,Y. Takeda,Physica E: Low-Dimensional Systems and Nanostructures,ELSEVIER SCIENCE BV,Vol. 10,No. 1-3,p. 395-398,2001年05月
  • Magnetic properties of Er and Er, O-doped GaAs grown by organometallic vapor phase epitaxy,Y. Morinaga,T. Edahiro,N. Fujimura,T. Ito,T. Koide,Y. Fujiwara,Y. Takeda,Physica E: Low-Dimensional Systems and Nanostructures,ELSEVIER SCIENCE BV,Vol. 10,No. 1-3,p. 391-394,2001年05月
  • Luminescence properties of Er,O-codoped GaP grown by organometallic vapor phase epitaxy,Yasufumi Fujiwara,Tatsuhiko Koide,Yoshikazu Takeda,Materials Science and Engineering B: Solid-State Materials for Advanced Technology,ELSEVIER SCIENCE SA,Vol. 81,No. 1-3,p. 153-156,2001年04月
  • 講演会報告[第61回応用物理学会学術講演会(2000年)],応用物理 70(1) (2001) pp. 87-88.,2001年
  • Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy,Proceedings of the 13th International Conference on Indium Phosphide and Related Materials (IPRM'01, Nara, Japan, May 14-18, 2001) pp. 405-408.,2001年
  • 講演会報告[第48回応用物理学関係連合講演会(2001年)],応用物理 70(6) (2001) pp. 724-725.,2001年
  • Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy,R. Oga,S. Yamamoto,I. Ohzawa,Y. Fujiwara,Y. Takeda,Conference Proceedings - International Conference on Indium Phosphide and Related Materials,IEEE,p. 405-408,2001年
  • Growth mode transition of InGaAs in OMVPE growth on GaP (001),H. Moriya,Y. Nonogaki,S. Fuchi,A. Koizumi,Y. Fujiwara,Y. Takeda,Microelectronic Engineering,ELSEVIER SCIENCE BV,Vol. 51,p. 35-42,2000年05月
  • Self-assembled InGaAs dots grown on GaP (0 0 1) substrate by low-pressure organometallic vapor phase epitaxy,S. Fuchi,Y. Nonogaki,H. Moriya,A. Koizumi,Y. Fujiwara,Y. Takeda,Physica E: Low-Dimensional Systems and Nanostructures,ELSEVIER SCIENCE BV,Vol. 7,No. 3,p. 855-859,2000年05月
  • SR-stimulated etching and OMVPE growth for semiconductor nanostructure fabrication,Y. Nonogaki,H. Hatate,R. Oga,S. Yamamoto,Y. Fujiwara,Y. Takeda,H. Noda,T. Urisu,Materials Science and Engineering B: Solid-State Materials for Advanced Technology,ELSEVIER SCIENCE SA,Vol. 74,No. 1,p. 7-11,2000年05月01日
  • Er-related luminescence from self-assembled InAs quantum dots doped with Er by organometallic vapor-phase epitaxy,Y. Fujiwara,T. Kawamoto,S. Fuchi,M. Ichida,Y. Nonogaki,A. Nakamura,Y. Takeda,Journal of Luminescence,ELSEVIER SCIENCE BV,Vol. 87,p. 326-329,2000年05月
  • Ultrafast relaxation dynamics of photoexcited carriersin an In0.53Ga0.47As/InP multiple-quantum well,Proceedings of the 25th International Conference on Physics of Semiconductors (ICPS-25, Osaka, Japan, August 17-22, 2000) (Springer Verlag, Heidelberg, 2001) pp. 621-622.,2000年
  • Luminescence properties of Er,O-codoped InGaAs/GaAs MQW structures by organometallic vapor phase epitaxy,Proceedings of the 25th International Conference on Physics of Semiconductors (ICPS-25, Osaka, Japan, August 17-22, 2000) (Springer Verlag, Heidelberg, 2001) pp. 1389-1390.,2000年
  • Ultrafast relaxation dynamics of photoexcited carriersin an In0.53Ga0.47As/InP multiple-quantum well,Proceedings of the 25th International Conference on Physics of Semiconductors (ICPS-25, Osaka, Japan, August 17-22, 2000) (Springer Verlag, Heidelberg, 2001) pp. 621-622.,2000年
  • Luminescence properties of Er,O-codoped InGaAs/GaAs MQW structures by organometallic vapor phase epitaxy,Proceedings of the 25th International Conference on Physics of Semiconductors (ICPS-25, Osaka, Japan, August 17-22, 2000) (Springer Verlag, Heidelberg, 2001) pp. 1389-1390.,2000年
  • EPR measurement on Er-doped InP grown by organometallic vapor phase epitaxy,C. Urakawa,Y. Nakashima,H. Ohta,T. Ito,Y. Fujiwara,Y. Takeda,Applied Magnetic Resonance,SPRINGER WIEN,Vol. 19,No. 1,p. 3-7,2000年
  • Effects of GaP cap layer growth on self-assembled inas islands grown on GaP (001) by organometallic vapor phase epitaxy,Shingo Fuchi,Youichi Nonogaki,Hiromitsu Moriya,Yasufumi Fujiwara,Yoshikazu Takeda,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,JAPAN SOC APPLIED PHYSICS,Vol. 39,No. 6 A,p. 3290-3293,2000年
  • Luminescence properties of Er,O-codoped III-V semiconductors grown by organometallic vapor phase epitaxy,Y. Fujiwara,T. Kawamoto,T. Koide,Y. Takeda,Physica B: Condensed Matter,ELSEVIER SCIENCE BV,Vol. 273-274,p. 770-773,1999年12月15日
  • Relaxation of optically excited 4f electrons in Er-doped Ga<inf>x</inf>In<inf>1-x</inf>P,Y. Fujiwara,T. Ito,M. Ichida,T. Kawamoto,O. Watanabe,I. Yamakawa,A. Nakamura,Y. Takeda,Physica B: Condensed Matter,ELSEVIER SCIENCE BV,Vol. 272,No. 1-4,p. 428-430,1999年12月01日
  • Femtosecond relaxation dynamics of hot carriers in photoexcited In<inf>0.53</inf>Ga<inf>0.47</inf>As,Y. Hamanaka,D. Nishiwaki,Y. Nonogaki,Y. Fujiwara,Y. Takeda,A. Nakamura,Physica B: Condensed Matter,ELSEVIER SCIENCE BV,Vol. 272,No. 1-4,p. 391-393,1999年12月01日
  • Effects of vicinal InP (001) surface on in As dots grown by droplet hetero-epitaxy,Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda,Materials Science and Engineering B: Solid-State Materials for Advanced Technology,ELSEVIER SCIENCE SA,Vol. 58,No. 3,p. 195-198,1999年03月29日
  • InP基板上へのErP原子層制御スーパーヘテロエピタキシャル成長とその物性 【招待講演】,名古屋大学理工科学総合研究センター談話会、名古屋大学、名古屋市千種区、9月22日 (1999).,1999年
  • Hot carrier relaxation dynamics in In<inf>0.53</inf>Ga<inf>0.47</inf>As studied by femtosecond pump-probe spectroscopy,D. Nishiwaki,Y. Hamanaka,Y. Nonogaki,Y. Fujiwara,Y. Takeda,A. Nakamura,Journal of Luminescence,ELSEVIER SCIENCE BV,Vol. 83-84,p. 49-53,1999年
  • Thermal stability of atom configurations around Er atoms doped in InP by OMVPE,H Ofuchi,T Ito,T Kawamoto,M Tabuchi,Y Fujiwara,Y Takeda,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,JAPAN SOC APPLIED PHYSICS,Vol. 38,No. 38-1,p. 542-544,1999年
  • "Semimetal to Semiconductor Transition in ErP Islands Grown on InP(001)due to Quantum Size Effects",Physical Review B,Vol. 59,No. 19,p. 12236-12239,1999年
  • Optically detected far-infrared magnetoabsorption in InGaAs,Hiroyasu Nakata,Nobuhiro Shimizu,Tyuzi Ohyama,Youichi Nonogaki,Yasufumi Fujiwara,Yoshikazu Takeda,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,JAPAN SOC APPLIED PHYSICS,Vol. 38,No. 4 A,p. 1868-1871,1999年
  • Nanoscale ErP islands on InP(001) substrate grown by organometallic vapor-phase epitaxy,Leonid Bolotov,Takahiro Tsuchiya,Takashi Ito,Yasufumi Fujiwara,Yoshikazu Takeda,Arao Nakamura,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,JAPAN J APPLIED PHYSICS,Vol. 38,No. 2 B,p. 1060-1063,1999年
  • Thermal quenching of Er-related luminescence in GaInP doped with Er by organometallic vapor phase epitaxy,Yasufumi Fujiwara,Takashi Ito,Masao Ichida,Takeshi Kawamoto,Osamu Watanabe,Ichiro Yamakawa,Arao Nakamura,Yoshikazu Takeda,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,JAPAN SOC APPLIED PHYSICS,Vol. 38,No. 2 B,p. 1008-1011,1999年
  • Intense 1.5 μm emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE,Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda,Materials Science and Engineering B,ELSEVIER SCIENCE SA,Vol. 57,No. 1,p. 84-86,1998年12月04日
  • Photoreflectance study of InP/InGaAs(1-5 ML)/InP single quantum well,Jiti Nukeaw,Rikiya Asaoka,Yasufumi Fujiwara,Yoshikazu Takeda,Thin Solid Films,ELSEVIER SCIENCE SA,Vol. 334,No. 1-2,p. 44-48,1998年12月04日
  • Observation of high electric field at ZnSe/GaAs heterointerfaces by fast Fourier transformed photoreflectance,Jiti Nukeaw,Yasufumi Fujiwara,Yoshikazu Takeda,Mitsuru Funato,Satoshi Aoki,Shizuo Fujita,Shigeo Fujita,Thin Solid Films,ELSEVIER SCIENCE SA,Vol. 334,No. 1-2,p. 11-14,1998年12月04日
  • Local structures around Er atoms doped in InP revealed by fluorescence EXAFS,H. Ofuchi,D. Kawamura,N. Matsubara,M. Tabuchi,Y. Fujiwara,Y. Takeda,Microelectronic Engineering,ELSEVIER SCIENCE BV,Vol. 43-44,p. 745-751,1998年08月01日
  • Dynamical properties of excitons interacting with electrons heated by far-infrared cyclotron resonance in InGaAs,H. Nakata,N. Shimizu,T. Ohyama,Y. Nonogaki,Y. Fujiwara,Y. Takeda,Physica B: Condensed Matter,ELSEVIER SCIENCE BV,Vol. 246-247,p. 204-207,1998年05月29日
  • Local structure study of dilute Er in III-V semiconductors by fluorescence EXAFS,H Ofuchi,D Kawamura,J Tsuchiya,N Matsubara,M Tabuchi,Y Fujiwara,Y Takeda,JOURNAL OF SYNCHROTRON RADIATION,INT UNION CRYSTALLOGRAPHY,Vol. 5,p. 1061-1063,1998年05月
  • Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy,Yasufumi Fujiwara,Anthony P. Curtis,Gregory E. Stillman,Naoteru Matsubara,Yoshikazu Takeda,Journal of Applied Physics,AMER INST PHYSICS,Vol. 83,No. 9,p. 4902-4908,1998年05月01日
  • InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE,Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda,Materials Science and Engineering B,ELSEVIER SCIENCE SA,Vol. 51,No. 1-3,p. 118-121,1998年02月27日
  • Nanoscale ErP islands on InP (001) substrate grown by organometallic vapor phase epitaxy,L. Bolotov,T. Tsuchiya,T. Ito,Y. Fujiwara,Y. Takeda,A. Nakamura,Conference Proceedings - International Conference on Indium Phosphide and Related Materials,IEEE,p. 143-146,1998年
  • Luminescence study on GaInP doped with Er by OMVPE,Proceedings of the 10th International Conference on Indium Phosphide and Related Materials (IPRM'98, Tsukuba, Japan, May 11-15, 1998) pp. 603-606.,1998年
  • Quantum size effects in ErP islands grown on the InP(001) surface: crossover of semimetallic states to semiconducting states,Proceedings of the 24th International Conference on Physics of Semiconductors (ICPS-24, Jerusalem, Israel, August 2-7, 1998), edited by D. Gershoni (World Scientific Publishing Co. Pte. Ltd., Singapore, 1998).,1998年
  • Nanoscale ErP islands on InP (100) substrate grown by organometallic vapor phase epitaxy,Proceedings of the 10th International Conference on Indium Phosphide and Related Materials (IPRM'98, Tsukuba, Japan, May 11-15, 1998) pp. 143-146.,1998年
  • Luminescence study on GaInP doped with Er by OMVPE,Y. Fujiwara,T. Ito,T. Kawamoto,Y. Takeda,Conference Proceedings - International Conference on Indium Phosphide and Related Materials,IEEE,p. 603-606,1998年
  • Quantum size effects in ErP islands grown on the InP(001) surface: crossover of semimetallic states to semiconducting states,Proceedings of the 24th International Conference on Physics of Semiconductors (ICPS-24, Jerusalem, Israel, August 2-7, 1998), edited by D. Gershoni (World Scientific Publishing Co. Pte. Ltd., Singapore, 1998).,1998年
  • Fabrication of InP Sub-micron Pillars for Two-dimensional Photonic Crystals by Reactive Ion Etching,H. Hatate,M. Hashimoto,H. Shirakawa,Y. Fujiwara,Y. Takeda,H. Nakano,T. Tatsuta,O. Tsuji,Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference,JAPAN SOC APPLIED PHYSICS,Vol. 1998-July,No. 12 B,p. 166-167,1998年
  • "Effects of Post Annealing on Self-Organized InAs Islands on(100)GaP by Organometallic Vapor Phase Epitaxy",Journal of Surface Analysis,Vol. 4,No. 2,p. 259-263,1998年
  • Fabrication of two-dimensional InP photonic band-gap crystals by reactive ion etching with inductively coupled plasma,Yasufumi Fujiwara,Koji Kikuchi,Masayuki Hashimoto,Hitoshi Hatate,Toshiaki Imai,Yoshikazu Takeda,Hirohiko Nakano,Masahiro Honda,Toshiaki Tatsuta,Osamu Tsuji,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,JAPAN SOC APPLIED PHYSICS,Vol. 36,No. 12 SUPPL. B,p. 7763-7768,1997年12月
  • Observation of electric fields at surface and interface of doped GaAs/semi-insulating GaAs structures by fast fourier transformed photoreflectance,Jiti Nukeaw,Yasufumi Fujiwara,Yoshikazu Takeda,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,JAPAN SOC APPLIED PHYSICS,Vol. 36,No. 11,p. 7019-7023,1997年11月
  • Structural analysis of Erbium δ-doped InP(001) crystal by means of RBS channeling,J. Yuhara,H. Takeda,N. Matsubara,M. Tabuchi,Y. Fujiwara,K. Morita,Y. Takeda,Radiation Physics and Chemistry,PERGAMON-ELSEVIER SCIENCE LTD,Vol. 50,No. 3,p. 193-197,1997年09月
  • Layer structure analysis of Er δ-doped InP by x-ray crystal truncation rod scattering,Yoshikazu Takeda,Keiji Fujita,Naoteru Matsubara,Naoki Yamada,Satofumi Ichiki,Masao Tabuchi,Yasufumi Fujiwara,Journal of Applied Physics,AMER INST PHYSICS,Vol. 82,No. 2,p. 635-638,1997年07月15日
  • Occupation site and distribution of δ-doped Er in InP measured by X-ray CTR scattering,K. Fujita,J. Tsuchiya,S. Ichiki,H. Hamamatsu,N. Matsumoto,M. Tabuchi,Y. Fujiwara,Y. Takeda,Applied Surface Science,ELSEVIER SCIENCE BV,Vol. 117-118,p. 785-789,1997年06月02日
  • Atom configuration study of δ-doped Er in InP by fluorescence EXAFS,H. Ofuchi,J. Tsuchiya,N. Matsubara,M. Tabuchi,Y. Fujiwara,Y. Takeda,Applied Surface Science,ELSEVIER SCIENCE BV,Vol. 117-118,p. 781-784,1997年06月02日
  • Characterization of InP δ-doped with Er by FFT photoreflectance,Jiti Nukeaw,Naoteru Matsubara,Yasufumi Fujiwara,Yoshikazu Takeda,Applied Surface Science,ELSEVIER SCIENCE BV,Vol. 117-118,p. 776-780,1997年06月02日
  • Formation of InAs islands on InP (001) by droplet hetero-epitaxy,Y. Nonogaki,T. Iguchi,Y. Fujiwara,Y. Takeda,Applied Surface Science,ELSEVIER SCIENCE BV,Vol. 117-118,p. 665-669,1997年06月02日
  • Effects of growth temperature on Er-related photoluminescence in Er-doped InP and GaAs grown by organometallic vapor phase epitaxy with tertiarybutylphosphine and tertiarybutylarsine,Yasufumi Fujiwara,Naoteru Matsubara,Junji Tsuchiya,Takashi Ito,Yoshikazu Takeda,Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers,JAPAN J APPLIED PHYSICS,Vol. 36,No. 5 A,p. 2587-2591,1997年05月
  • Observation of trap states in Er-doped InP by photoreflectance,Jiti Nukeaw,Jun Yanagisawa,Naoteru Matsubara,Yasufumi Fujiwara,Yoshikazu Takeda,Applied Physics Letters,AMER INST PHYSICS,Vol. 70,No. 1,p. 84-86,1997年01月06日
  • "Formation of ErP Islands on The Er-doped InP(001)by MOVPE",Japanese Journal of Applied Physics,Vol. 36,No. 11B,1997年
  • Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBP,Hiroyasu Nakata,Kazuo Satoh,Tyuzi Ohyama,Yasufumi Fujiwara,Youichi Nonogaki,Yoshikazu Takeda,Journal of Electronic Materials,MINERALS METALS MATERIALS SOC,Vol. 25,No. 5,p. 611-617,1996年04月
  • Structural analysis of erbium δ-doped InP by OMVPE with RBS-channeling,Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research: Recent Progress in Accelerator, Beam Application (Gunma, Japan, March 18-20, 1996) pp. 337-339.,1996年
  • Structural analysis of erbium δ-doped InP by OMVPE with RBS-channeling,Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research: Recent Progress in Accelerator, Beam Application (Gunma, Japan, March 18-20, 1996) pp. 337-339.,1996年
  • Cyclotron resonance in InP grown by organometallic vapor phase epitaxy with TMIn and TBP,H. Nakata,K. Satoh,T. Iwao,T. Ohyama,E. Otsuka,Y. Fujiwara,Y. Takeda,Conference Proceedings - International Conference on Indium Phosphide and Related Materials,I E E E,p. 249-252,1995年
  • Cyclotron resonance in InP grown by organometallic vapour phase epitaxy with TMIn and TBP,Proceedings of the 7th International Conference on Indium Phosphide and Related Materials (IPRM-7, Sapporo, Japan, May 9-13, 1995), edited by O. Wada, pp. 249-252.,1995年
  • Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical properties of InP grown by organometallic vapour phase epitaxy with TMIn and TBP,Y. Fujiwara,S. Furuta,K. Makita,Y. Ito,Y. Nonogaki,Y. Takeda,Journal of Crystal Growth,ELSEVIER SCIENCE BV,Vol. 146,No. 1-4,p. 544-548,1995年01月01日
  • Structured photoluminescence spectrum in laterally anodized porous silicon,Yasufumi Fujiwara,Hikaru Nishitani,Hiroyasu Nakata,Tyuzi Ohyama,Japanese Journal of Applied Physics,JAPAN SOC APPLIED PHYSICS,Vol. 31,No. 12,p. L1763-L1766,1992年12月
  • Light-induced degradation and recovery of visible photoluminescence in porous silicon,Hikaru Nishitani,Hiroyasu Nakata,Yasufumi Fujiwara,Tyuzi Ohyama,Japanese Journal of Applied Physics,JAPAN SOC APPLIED PHYSICS,Vol. 31,No. 11,p. L1577-L1579,1992年11月
  • Two peaks on visible photoluminescence spectrum of porous silicon,Proceedings of the 21st International Conference on Physics of Semiconductors, (ICPS-21, Beijing, China, 1992) (World Scientific Publishing Co. Pte. Ltd., Singapore, 1993) pp. 1455-1458.,1992年
  • ポーラスSiのフォトルミネッセンスの温度変化および劣化と回復 【招待講演】,応用物理学会結晶工学分科会第9回結晶工学シンポジウム (1992) pp. 47-50.,1992年
  • ポーラスSiにおける可視域発光の劣化現象 【招待講演】,第19回アモルファス物質の物性と応用セミナー (1992) p. 3.,1992年
  • ポーラスSiにおける可視域発光の劣化現象 【招待講演】,応用物理学会応用電子物性分科会研究会 (1992).,1992年
  • Two peaks on visible photoluminescence spectrum of porous silicon,Proceedings of the 21st International Conference on Physics of Semiconductors, (ICPS-21, Beijing, China, 1992) (World Scientific Publishing Co. Pte. Ltd., Singapore, 1993) pp. 1455-1458.,1992年
  • Diagnosis of surface stability of 80k-phase bisrcacuo single crystals with and without li doping,Satoshi Hirata,Ken Sakuta,Yasufumi Fujiwara,Takeshi Kobayashi,Japanese Journal of Applied Physics,JAPAN J APPLIED PHYSICS,Vol. 30,No. 9,p. 1975-1976,1991年09月
  • Effects of oxygen addition on diamond film growth by electron-cyclotron-resonance microwave plasma cvd apparatus,Masayuki Nunotani,Masaaki Komori,Masahiro Yamasawa,Yasufumi Fujiwara,Ken Sakuta,Takeshi Kobayashi,Shinichi Nakashima,Shoichiro Minomo,Michio Taniguchi,Masato Sugiyo,Japanese Journal of Applied Physics,JAPAN SOC APPLIED PHYSICS,Vol. 30,No. 7,p. L1199-L1202,1991年07月
  • Local Atomic Configuration And Auger Valence Electron Spectra In Bisrcacu Single Crystals,Y. Fujiwara,S. Hirata,M. Nishikubo,T. Kobayashi,IEEE Transactions on Magnetics,IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC,Vol. 27,No. 2,p. 1166-1169,1991年03月
  • Improved Siiperconductivity In Bisrcacuo Single Crystals By Lithium Doping,Y. Fujiwara,S. Hirata,M. Nishikubo,T. Kobayashi,IEEE Transactions on Magnetics,IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC,Vol. 27,No. 2,p. 1150-1153,1991年03月
  • Growth and characterization of new Bi<inf>14</inf>(Sr <inf>0.33</inf>Ca<inf>0.67</inf>)<inf>5</inf>O<inf>26</inf> single crystals,Yasufumi Fujiwara,Satoshi Hirata,Takeshi Kobayashi,Eungi Min,Kyouichi Shibuya,Journal of Applied Physics,Vol. 69,No. 8,p. 4373-4378,1991年
  • Cathodeluminescence from MgO substrates with YBaCuO superconducting epitaxial thin films,Yasufumi Fujiwara,Satoshi Hirata,Masahiro Iyori,Takeshi Kobayashi,Solid State Communications,PERGAMON-ELSEVIER SCIENCE LTD,Vol. 74,No. 7,p. 641-644,1990年05月
  • Catastrophic local degradation of YBa<inf>2</inf>Cu<inf>3</inf>O<inf>y</inf> epitaxial film induced by high electric field application,Uki Kabasawa,Katsunori Asano,Masahiro Iyori,Satoshi Hirata,Ken Sakuta,Yasufumi Fujiwara,Takeshi Kobayashi,Japanese Journal of Applied Physics,JAPAN J APPLIED PHYSICS,Vol. 29,No. 3,p. L453-L455,1990年03月
  • Preparation of as-grown bipbsrcacuo thin films by electron-cyclotron-resonance microwave plasma sputtering,Yasuhiro Nishimori,Shoichiro Minomo,Michio Taniguchi,Masato Sugiyo,Yoshito Fukumoto,Takeshi Kobayashi,Yasufumi Fujiwara,Japanese Journal of Applied Physics,JAPAN SOC APPLIED PHYSICS,Vol. 28,No. 7 A,p. L1220-L1222,1989年07月,記事・総説・解説・論説等(学術雑誌)
  • Characterization of high tc superconductor by luminescence methods,Yasufumi Fujiwara,Takehi Kobayashi,IEEE Transactions on Magnetics,IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC,Vol. 25,No. 2,p. 2563-2566,1989年03月
  • ECR ion-etching characteristics of YBaCuO and BiSrCaCuO thin films,Proceedings of the 2nd Workshop on High-Temperature Superconducting Electronic Devices (Hokkaido, Japan, 1989) pp. 175-180.,1989年
  • Cathodeluminescence from high Tc superconducting bulks and thin films,Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89, Tokyo, Japan, June 12-13, 1989) pp. 338-341.,1989年
  • Microfabrication technology for Y-Ba-Cu-O thin films,Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89, Tokyo, Japan, 12-13 June 1989) p. 545.,1989年
  • 高温超伝導バルクおよび薄膜からのカソードルミネッセンス,藤原 康文,平田 智嗣,井寄 将博,小林 猛,粉体および粉末冶金,Vol. 36,No. 5,p. 588-591,1989年,記事・総説・解説・論説等(学術雑誌)
  • ECR ion-etching characteristics of YBaCuO and BiSrCaCuO thin films,Proceedings of the 2nd Workshop on High-Temperature Superconducting Electronic Devices (Hokkaido, Japan, 1989) pp. 175-180.,1989年
  • Preparation of as-grown BiPbSrCaCuO thin films by electron-cyclotron-resonance microwave plasma sputtering,Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89, Tokyo, Japan, June 12-13, 1989) pp. 97-100.,1989年
  • Microfabrication technology for Y-Ba-Cu-O thin films,Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89, Tokyo, Japan, 12-13 June 1989) p. 545.,1989年
  • HIGH-SENSITIVE CHARACTERIZATION METHOD OF INTERFACE STRESS AT HETEROSTRUCTURE BY CR-RELATED LUMINESCENCE,T NISHINO,S SHIRAKATA,Y FUJIWARA,Y HAMAKAWA,JOURNAL OF ELECTRONIC MATERIALS,MINERALS METALS MATERIALS SOC,Vol. 16,No. 4,p. A3-A3,1987年07月,研究発表ペーパー・要旨(国際会議)
  • ATOMIC PLANAR DOPING TO GaAs BY MOCVD AND ITS APPLICATION TO TWO-DIMENSIONAL ELECTRONIC DEVICES.,Yasufumi Fujiwara,Yoshito Fukumoto,Takeshi Kobayashi,Yoshihiro Hamakawa,Conference on Solid State Devices and Materials,p. 159-162,1987年
  • Annealing-temperature dependence of high temperature superconductivity in YBaCuO system,Extended Abstracts of 1987 International Superconductivity Electronics Conference (ISEC '87, Tokyo, Japan, August 28-29, 1987) pp. 229-232.,1987年
  • First observation of Er-related luminescence in highTc superconducting Er-Ba-Cu-O system,Extended Abstracts of 1987 International Superconductivity Electronics Conference (ISEC '87, Tokyo, Japan, August 28-29, 1987) p. 401.,1987年
  • Annealing-temperature dependence of high temperature superconductivity in YBaCuO system,Extended Abstracts of 1987 International Superconductivity Electronics Conference (ISEC '87, Tokyo, Japan, August 28-29, 1987) pp. 229-232.,1987年
  • Se atomic planar doping to GaAs by MOCVD and its application to two-dimensional electronic devices,Extended Abstracts of the 19th Conference on Solid State Devices & Materials (Tokyo, Japan, August 25-27, 1987) pp. 159-162.,1987年
  • First observation of Er-related luminescence in highTc superconducting Er-Ba-Cu-O system,Extended Abstracts of 1987 International Superconductivity Electronics Conference (ISEC '87, Tokyo, Japan, August 28-29, 1987) p. 401.,1987年
  • New Cr-related luminescence lines in In-doped GaAs,Proceedings of the 18th International Conference on Physics of Semiconductors (ICPS-18, Stockholm, Sweden, August 11-15, 1986), edited by O. Engstrom (World Scientific Publishing Co. Pte. Ltd., Singapore, 1987) pp. 959-962.,1986年
  • New Cr-related luminescence lines in In-doped GaAs,Proceedings of the 18th International Conference on Physics of Semiconductors (ICPS-18, Stockholm, Sweden, August 11-15, 1986), edited by O. Engstrom (World Scientific Publishing Co. Pte. Ltd., Singapore, 1987) pp. 959-962.,1986年
  • INTERFACE STRESS AT InGaPAs/GaAs HETEROJUNCTION.,Sho Shirakata,Yasufumi Fujiwara,Masahiko Kondo,Taneo Nishino,Yoshihiro Hamakawa,Conference on Solid State Devices and Materials,p. 205-208,1985年,研究発表ペーパー・要旨(国際会議)

著書

  • "Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy",Materials Research Society Symposium Proceedings, Progress in Semiconductors II--Electronic and Optoelectronic Applications,2003年
  • "ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy",EPR in the 21st Century: Basics and Applications to Material, Life and Earth Sciences,2002年
  • "Organometallic vapor phase and droplet heteroepitaxy of quantum structur",InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices,2000年
  • "Growth condition dependences of optical properties of Er in InP and local structures",InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices,2000年
  • "Formation of InGaAs Dots on InP Substrate with Lattice-Matching Growth Condition by Droplet Heteroepitaxy",Institute of Physics Conference Series,1999年
  • "High Thermal-Stability of Er-Related Luminescence and Atom Configurations around Er Atoms Doped in InP by OMVPE Growth",Institute of Physics Conference Series,1999年
  • エンサイクロペディア電子情報通信ハンドブック,オーム社,1998年
  • "Extremely Sharp Er-Related Luminescence in Er-Doped GaP Grown by OMVPE with TBP",Institute of Physics Conference Series,1998年
  • "EXAFS and X-Ray CTR Scattering Characterization of Er Doped in InP by OMVPE",Materials Research Society Symposium Proceedings,1996年
  • "Erbium δ-Doping to InP by OMVPE",Institute of Physics Conference Series,1996年
  • "Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-toxic P Source",Materials Science Forum,1995年
  • "Visible Photoluminescence of Porous Silicon",Materials Science Forum,1993年
  • 光・薄膜技術マニュアル,オプトロニクス社,1989年
  • 高温超伝導材料プロセスと応用技術,アイピーシー出版部,1989年
  • "Characterization of High Tc Superconductors by Luminescence Method",Progress in High Temperature Superconductivity,1989年
  • "Thin Films And Their Applications in Opto-Electronics",Optronics,1989年
  • "Process and Application of High Tc Superconductors",IPC Press,1989年
  • "Luminescence Study of New High Tc Oxide Superconductors",Advances in Superconductivity,1988年
  • "Characterization of LnBaCuO(Ln=Er, Eu, Gd. . . )Ceramics by Photo and Thermally Stimulate Luminescence",Proc. MRS Intern. Mtg. Advanced Materials,1988年
  • "Local Strain Field in In-Doped Semi-Insulating GaAs",Semi-Insulating III-V Materials,1986年
  • "Characterization of Deep Impurities in GaAs by Photoluminescence",Proc. SPIE Symp. Spectroscopic Characterization Techniques for Semiconductor Technology,1984年
  • "Deep Acceptor Photoluminescence in GaAs",Institute of Physics Conference Series,1982年
  • "Photoluminescence Studies of Acceptor Impurities in InGaAsP",Institute of Physics Conference Series,1981年

特許・実用新案・意匠

  • 新規な結晶材料

作品

  • 希土類元素添加半導体を基盤とした波長超安定新規発光デバイスの高性能化,2004年 ~
  • 原子レベル制御による新規量子機能材料の創製,2004年 ~
  • 希土類添加Ⅲ-Ⅴ族半導体を用いた波長超安定発光デバイスの開発,2004年 ~
  • 希土類元素添加半導体における電流励起光学利得とその最適化,2004年 ~
  • 希土類元素添加半導体の新展開:秩序制御による新しいスピン物性の発現,2004年 ~

受賞

  • 文部科学大臣表彰科学技術賞(研究部門),文部科学省,2020年04月
  • 業績賞,日本学術振興会光電相互変換第125委員会,2019年03月
  • フェロー,公益社団法人応用物理学会,2017年09月
  • レーザー学会賞(論文賞),一般社団法人レーザー学会,2015年05月
  • 平成26年国立大学法人大阪大学総長顕彰,国立大学法人大阪大学,2014年07月
  • 平成25年国立大学法人大阪大学総長顕彰,国立大学法人大阪大学,2013年08月
  • JJAP/APEX編集貢献賞,公益社団法人応用物理学会,2013年03月
  • 平成23年国立大学法人大阪大学研究功績賞(研究部門),国立大学法人大阪大学,2011年08月
  • 第32回応用物理学会優秀論文賞,社団法人応用物理学会,2010年09月
  • 平成21年度国立大学法人大阪大学教育・研究功績賞,国立大学法人大阪大学,2010年02月
  • VBL情報・システムプロジェクト最優秀融合研究企画賞,大阪大学,2005年03月
  • 光都ビジネスコンペin姫路 優秀賞,姫路商工会議所,2004年03月
  • 永井科学技術財団財団賞(学術賞),永井科学技術財団,2002年03月
  • 楠本賞,大阪大学,1981年03月

講演・口頭発表等

  • Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition,Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan.,2006年
  • Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface [Invited Talk],Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42.,2006年
  • Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃),Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095.,2006年
  • Ⅲ-Ⅴ族化合物半導体光デバイスの新しい潮流 【招待講演】,日本金属学会セミナー「非シリコン半導体の現状と展望」 (2006) pp. 5-10.,2006年
  • INTERFACE STRESS AT InGaPAs/GaAs HETEROJUNCTION.,Sho Shirakata,Yasufumi Fujiwara,Masahiko Kondo,Taneo Nishino,Yoshihiro Hamakawa,Conference on Solid State Devices and Materials,1985年
  • CHARACTERIZATION OF RESIDUAL STRESS IN SEMI-INSULATING GaAs:Cr BY PHOTOLUMINESCENCE METHOD.,Y. Fujiwara,A. Kojima,T. Nishino,Y. Hamakawa,K. Yasutaka,M. Umeno,H. Kawabe,Conference on Solid State Devices and Materials,1984年

委員歴

  • 学協会,公益社団法人応用物理学会,副会長,2020年03月 ~ 継続中
  • 学協会,(社)日本金属学会,セミナー・シンポジウム委員会委員,2009年 ~
  • 学協会,(社)日本材料学会,学会将来構想WGメンバー,2008年 ~
  • 学協会,(社)日本金属学会,分科会委員会委員,2007年 ~
  • 学協会,Japanese Journal of Applied Physics,編集委員,2004年 ~