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Fujiwara Yasufumi

藤原　康文

The Institute of Scientific and Industrial Research, Specially Appointed Professor

keyword Electronic and Electric Materials Engineering，Applied Physics of Property and Crystallography

Education

  • 1983/04 - 1985/07, Osaka University, Graduate School of Engineering Sciencel
  • 1981/04 - 1983/03, Osaka University
  • 1977/04 - 1981/03, Osaka University, School of Engineering Science Direct Affiliates

Research History

  • 2022/04 - Present, Osaka University, R3 Institute of Newly-Emerging Science Design, Director
  • 2003/07 - Present, Osaka University, Graduate School of Engineering, Professor
  • 2017/04 - 2022/03, Osaka University, Institute for Nanoscience Design, Directer
  • 2019/10 - 2020/03, Tottori University, Graduate School of Engineering, Part-time Lecturer
  • 2015/08 - 2016/08, Osaka University
  • 2006/04 - 2011/03, Tokyo University of Science, Guest Professor
  • 2008/10 - 2009/03, Kyoto University, Graduate School of Engineering, Part-time Lecturer
  • 2006/04 - 2009/03, Osaka Kyoiku University, Department of Arts and Sciences, Part-time Lecturer
  • 2007/10 - 2008/03, Kyoto University, Graduate School of Engineering, Part-time Lecturer
  • 2003/07 - 2004/03, Nagoya University, Graduate School of Engineering, Part-time Lecturer
  • 1997/04 - 2003/06, Nagoya University, Graduate School of Engineering, Associate Professor
  • 1993/04 - 1997/03, Nagoya University, School of Engineering, Associate Professor
  • 1995/11 - 1996/01, University of Illinois at Urbana-Champaign, Materials Research Laboratory and Department of Electrical and Computer Engineering, Visiting Associate Professor
  • 1991/01 - 1993/03, Osaka University, School of Engineering Science, Lecturer
  • 1985/08 - 1991/01, Osaka University, School of Engineering Science, Research Associate

Research Areas

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering
  • Nanotechnology/Materials, Crystal engineering
  • Nanotechnology/Materials, Applied materials

Professional Memberships

  • The Rare Earth Society of Japan
  • The Laser Society of Japan
  • The Society of Materials Science, Japan
  • The Japan Institute of Metals and Materials
  • The Japanese Society of Applied Physics

Papers

  • An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN, Takenori Iwaya,Shuhei Ichikawa,Volkmar Dierolf,Brandon Mitchell,Hayley Austin,Dolf Timmerman,Jun Tatebayashi,Yasufumi Fujiwara, AIP Advances, AIP Publishing, Vol. 14, No. 2, 2024/02/01
  • Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-co-doped GaAs, Zhidong Fang,Jun Tatebayashi,Ryohei Homi,Masayuki Ogawa,Hirotake Kajii,Masahiko Kondow,Kyoko Kitamura,Brandon Mitchell,Shuhei Ichikawa,Yasufumi Fujiwara, Optics Continuum, Optica Publishing Group, Vol. 2, No. 10, p. 2178-2178, 2023/10/03
  • Fabrication of polarity inverted LiNbO<sub>3</sub>/GaN channel waveguide by surface activated bonding for high-efficiency transverse quasi-phase-matched wavelength conversion, Ryosuke Noro,Mariko Adachi,Yasufumi Fujiwara,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama, Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, No. 10, p. 102001-102001, 2023/10/01
  • Formation and Optical Characteristics of GaN:Eu/GaN Nanowires for Applications in Light-Emitting Diodes, Jun Tatebayashi,Takaya Otabara,Takuma Yoshimura,Raiki Hada,Ryo Yoshida,Shuhei Ichikawa,Yasufumi Fujiwara, ECS Journal of Solid State Science and Technology, The Electrochemical Society, 2023/09/06
  • Electrically driven europium-doped GaN microdisk, T. Taniguchi,D. Timmerman,S. Ichikawa,J. Tatebayashi,Y. Fujiwara, Optics Letters, Optica Publishing Group, Vol. 48, No. 17, p. 4590-4590, 2023/08/28
  • Second harmonic generation from a-plane GaN vertical monolithic microcavity pumped with femtosecond laser, Tomoaki Nambu,Tomohiro Nakahara,Yuma Yasuda,Yasufumi Fujiwara,Masayoshi Tonouchi,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama, Applied Physics Express, IOP Publishing, Vol. 16, No. 7, p. 072005-072005, 2023/07/01
  • Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al<sub>2</sub>O<sub>3</sub>/n-ZnO Heterostructures, Jun Tatebayashi,Kazuto Nishimura,Shuhei Ichikawa,Shinya Yamada,Yoshikata Nakajima,Kazuhisa Sato,Kohei Hamaya,Yasufumi Fujiwara, ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 12, No. 7, p. 076017-076017, 2023/07/01
  • 229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide, Hiroto Honda,Soshi Umeda,Kanako Shojiki,Hideto Miyake,Shuhei Ichikawa,Jun Tatebayashi,Yasufumi Fujiwara,Kazunori Serita,Hironaru Murakami,Masayoshi Tonouchi,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama, Applied Physics Express, IOP Publishing, Vol. 16, No. 6, p. 062006-062006, 2023/06/01
  • Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices, Shinya Yamada,Masatoshi Kato,Shuhei Ichikawa,Michihiro Yamada,Takahiro Naito,Yasufumi Fujiwara,Kohei Hamaya, Advanced Electronic Materials, Wiley, 2023/05/09
  • Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy, T. Otabara,J. Tatebayashi,T. Yoshimura,D. Timmerman,S. Ichikawa,Y. Fujiwara, Japanese Journal of Applied Physics, IOP Publishing, Vol. 62, No. SG, p. SG1018-SG1018, 2023/03/03
  • Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing, T. Iwaya,S. Ichikawa,D. Timmerman,J. Tatebayashi,Y. Fujiwara, Applied Physics Letters, AIP Publishing, Vol. 122, No. 3, p. 032102-032102, 2023/01/16
  • Second harmonic generation in GaN transverse quasi-phase-matched waveguide pumped with femtosecond laser, Naoki Yokoyama,Yoshiki Morioka,Tomotaka Murata,Hiroto Honda,Kazunori Serita,Hironaru Murakami,Masayoshi Tonouchi,Shigeki Tokita,Shuhei Ichikawa,Yasufumi Fujiwara,Toshiki Hikosaka,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama, APPLIED PHYSICS EXPRESS, IOP Publishing Ltd, Vol. 15, No. 11, 2022/11
  • Formation and Optical Characteristics of Tm,Yb-Codoped ZnO Nanowires Towards Improvement of Photovoltaic Conversion Efficiency Via Downconversion, Jun TATEBAYASHI,Naoto NISHIYAMA,Dolf TIMMERMAN,Shuhei ICHIKAWA,Yasufumi FUJIWARA, Journal of the Society of Materials Science, Japan, Society of Materials Science, Japan, Vol. 71, No. 10, p. 811-818, 2022/10/15
  • Improved Q-factors of III-nitride-based photonic crystal nanocavities by optical loss engineering, Takenori Iwaya,Shuhei Ichikawa,Dolf Timmerman,Jun Tatebayashi,Yasufumi Fujiwara, Optics Express, Vol. 30, No. 16, p. 28853-28864, 2022/08/01
  • Formation and optical characteristics of GaN:Eu/GaN core-shell nanowires grown by organometallic vapor phase epitaxy, T. Otabara,J. Tatebayashi,S. Hasegawa,D. Timmerman,S. Ichikawa,M. Ichimiya,M. Ashida,Y. Fujiwara, Japanese Journal of Applied Physics, Vol. 61, No. SD, p. 1022/1-1022/5, 2022/06
  • DUV coherent light emission from ultracompact microcavity wavelength conversion device, Tomoaki Nambu,Taketo Yano,Soshi Umeda,Naoki Yokoyama,Hiroto Honda,Yasunori Tanaka,Yutaka Maegaki,Yusuke Mori,Masashi Yoshimura,Shuhei Kobayashi,Shuhei Ichikawa,Yasufumi Fujiwara,Ryota Ishii,Yoichi Kawakami,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama, Optics Express, Optica Publishing Group, Vol. 30, No. 11, p. 18628-18628, 2022/05/23
  • GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion, Naoki Yokoyama,Ryo Tanabe,Yuma Yasuda,Hiroto Honda,Shuhei Ichikawa,Yasufumi Fujiwara,Toshiki Hikosaka,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama, Japanese Journal of Applied Physics, IOP Publishing, Vol. 61, No. 5, p. 050902-050902, 2022/05/01
  • Elucidation of the excitation mechanism of Tb ions doped in AlxGa1−xN grown by OMVPE toward a wavelength-stable green emitter, R. Komai,S. Ichikawa,H. Hanzawa,J. Tatebayashi,Y. Fujiwara, Journal of Applied Physics, AIP Publishing, Vol. 131, No. 7, p. 073102-073102, 2022/02/21
  • Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers, Hayley J. Austin,Brandon Mitchell,Dolf Timmerman,Jun Tatebayashi,Shuhei Ichikawa,Yasufumi Fujiwara,Volkmar Dierolf, Journal of Applied Physics, AIP Publishing, Vol. 131, No. 4, p. 045701-045701, 2022/01/31
  • Eu-Doped GaN Red LEDs for Next-Generation Micro-LED Displays, Yasufumi FUJIWARA,Shuhei ICHIKAWA,Dolf TIMMERMAN,Jun TATEBAYASHI, NIHON GAZO GAKKAISHI (Journal of the Imaging Society of Japan), Vol. 60, No. 6, p. 593-605, 2021/12/10
  • Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder, Takenori Iwaya,Shuhei Ichikawa,Masato Murakami,Dolf Timmerman,Jun Tatebayashi,Yasufumi Fujiwara, Applied Physics Express, IOP Publishing, Vol. 14, No. 12, p. 122002-122002, 2021/12/01
  • Droop-free amplified red emission from Eu ions in GaN, Atsushi Takeo,Shuhei Ichikawa,Shogo Maeda,Dolf Timmerman,Jun Tatebayashi,Yasufumi FUJIWARA, Japanese Journal of Applied Physics, IOP Publishing, Vol. 60, No. 12, p. 120905/1-120905/6, 2021/11/19
  • Effect of carbon, oxygen, and intrinsic defects on hydrogen-related donor concentration in proton irradiated n-type silicon, Akira Kiyoi,Naoyuki Kawabata,Katsumi Nakamura,Yasufumi Fujiwara, Journal of Applied Physics, AIP Publishing, Vol. 130, No. 11, p. 115704/1-115704/8, 2021/09/21
  • High-Q 1D rod-based nanocavities, Dolf Timmerman,Takenori Iwaya,Yasufumi Fujiwara, Optics Letters, The Optical Society, Vol. 46, No. 17, p. 4260-4263, 2021/09/01
  • Monolithic microcavity second harmonic generation device using low birefringence paraelectric material without polarity-inverted structure, Tomoaki Nambu,Takumi Nagata,Soshi Umeda,Keishi Shiomi,Yasufumi Fujiwara,Toshiki Hikosaka,Abdul Mannan,Filchito Renee G. Bagsican,Kazunori Serita,Iwao Kawayama,Masayoshi Tonouchi,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama, Applied Physics Express, IOP Publishing, Vol. 14, No. 6, p. 061004-061004, 2021/06/01
  • Formation and optical characteristics of ZnO:Eu/ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition, J. Tatebayashi,M. Mishina,N. Nishiyama,D. Timmerman,S. Ichikawa,Y. Fujiwara, Japanese Journal of Applied Physics, IOP Publishing, Vol. 60, No. SC, p. SCCE05/1-SCCE05/5, 2021/06/01
  • Enhanced Red Emission of Eu,O-Codoped GaN Embedded in a Photonic Crystal Nanocavity with Hexagonal Air Holes, Shuhei Ichikawa,Yutaka Sasaki,Takenori Iwaya,Masato Murakami,Masaaki Ashida,Dolf Timmerman,Jun Tatebayashi,Yasufumi Fujiwara, Physical Review Applied, American Physical Society (APS), Vol. 15, No. 3, p. 034086/1-034086/11, 2021/03/30
  • Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut, Shuhei Ichikawa,Keishi Shiomi,Takaya Morikawa,Dolf Timmerman,Yutaka Sasaki,Jun Tatebayashi,Yasufumi Fujiwara, Applied Physics Express, IOP Publishing, Vol. 14, No. 3, p. 031008-031008, 2021/03/01
  • Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n-type silicon for power devices, Akira Kiyoi,Naoyuki Kawabata,Katsumi Nakamura,Yasufumi Fujiwara, Journal of Applied Physics, AIP Publishing, Vol. 129, No. 2, p. 025701-025701, 2021/01/14
  • Purcell-Effect-Enhanced Radiative Rate of Eu3+ Ions in GaN Microdisks, D. Timmerman,Y. Matsude,Y. Sasaki,S. Ichikawa,J. Tatebayashi,Y. Fujiwara, Physical Review Applied, American Physical Society (APS), Vol. 14, No. 6, p. 064059-064059, 2020/12/18
  • Temporally modulated energy shuffling in highly interconnected nanosystems, Brandon Mitchell,Hayley Austin,Dolf Timmerman,Volkmar Dierolf,Yasufumi Fujiwara, Nanophotonics, Walter de Gruyter GmbH, Vol. 10, No. 2, p. 851-876, 2020/12/11
  • Enhanced photoluminescence in high-Q photonic crystal nanocavities with Er,O-Codoped GaAs, Masayuki Ogawa,Jun Tatebayashi,Natsuki Fujioka,Ryoma Higashi,Shuhei Ichikawa,Masahiko Kondow,Dolf Timmerman,Yasufumi Fujiwara, Zairyo/Journal of the Society of Materials Science, Japan, Vol. 69, No. 11, p. 823-828, 2020/11/15
  • Perspective of Semiconductor Technologies Contributed to the IoT Society, Shuhei ICHIKAWA,Tomohiro INABA,Keishi SHIOMI,Jun TATEBAYASHI,Dolf TIMMERMAN,Yasufumi FUJIWARA, Journal of the Society of Materials Science, Japan, Society of Materials Science, Japan, Vol. 69, No. 10, p. 762-766, 2020/10/15
  • Investigation on Suitable Structure for Laser Oscillation in Eu-doped GaN with Two-Dimensional Photonic Crystal Nanocavities, Takenori IWAYA,Shuhei ICHIKAWA,Masato MURAKAMI,Jun TATEBAYASHI,Yasufumi FUJIWARA, Zairyo/Journal of the Society of Materials Science, Japan, Society of Materials Science, Japan, Vol. 69, No. 10, p. 721-726, 2020/10/15
  • Evaluations of Selective Dry Etching of GaAs Core Layer having Embedded InAs Quantum Dots Using Optical Measurements towards Photonic Crystal Laser Fabrication, Takumi Okunaga,Tatsuhiro Nozue,Yifan Xiong,Hirotake Kajii,Masato Morifuji,Jun Tatebayashi,Yasufumi Fujiwara,Tsutomu Nishihashi,Masahiko Kondow, 2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), IEEE, 2020/09
  • Enhanced Eu luminescence in GaN: Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities, Jun Tatebayashi,Shuhei Ichikawa,Yasufumi Fujiwara, Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, p. 71-72, 2020/09
  • Direct Visualization and Determination of the Multiple Exciton Generation Rate, Dolf Timmerman,Eiichi Matsubara,Leyre Gomez,Masaaki Ashida,Tom Gregorkiewicz,Yasufumi Fujiwara, ACS Omega, American Chemical Society (ACS), Vol. 5, No. 34, p. 21506-21512, 2020/09/01
  • Size dependence of quantum efficiency of red emission from GaN:Eu structures for application in micro-LEDs, D. Denier van der Gon,D. Timmerman,Y. Matsude,S. Ichikawa,M. Ashida,P. Schall,Y. Fujiwara, Optics Letters, The Optical Society, Vol. 45, No. 14, p. 3973-3973, 2020/07/15
  • Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs, R. Higashi,M. Ogawa,J. Tatebayashi,N. Fujioka,D. Timmerman,S. Ichikawa,Y. Fujiwara, Journal of Applied Physics, AIP Publishing, Vol. 127, No. 23, p. 233101-233101, 2020/06/21
  • Carrier dynamics and excitation of Eu3+ ions in GaN, Dolf Timmerman,Brandon Mitchell,Shuhei Ichikawa,Masaya Nagai,Masaaki Ashida,Yasufumi Fujiwara, Physical Review B, American Physical Society (APS), Vol. 101, No. 24, p. 245306-245306, 2020/06/17
  • Quantitative evaluation of enhanced Er luminescence in GaAs-based two-dimensional photonic crystal nanocavities, M. Ogawa,J. Tatebayashi,N. Fujioka,R. Higashi,M. Fujita,S. Noda,D. Timmerman,S. Ichikawa,Y. Fujiwara, Applied Physics Letters, {AIP} Publishing, Vol. 116, No. 18, p. 181102-181102, 2020/05/04
  • Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength, S. Ichikawa,N. Yoshioka,J. Tatebayashi,Y. Fujiwara, Journal of Applied Physics, Vol. 127, No. 11, p. 113103-113103, 2020/03/21
  • GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors, Tomohiro Inaba,Jun Tatebayashi,Keishi Shiomi,Dolf Timmerman,Shuhei Ichikawa,Yasufumi Fujiwara, ACS APPLIED ELECTRONIC MATERIALS, AMER CHEMICAL SOC, Vol. 2, No. 3, p. 732-738, 2020/03
  • Valence states and the magnetism of Eu ions in Eu-doped GaN, Takumi Nunokawa,Yasufumi Fujiwara,Yusuke Miyata,Norifumi Fujimura,Takahiro Sakurai,Hitoshi Ohta,Akira Masago,Hikari Shinya,Tetsuya Fukushima,Kazunori Sato,Hiroshi Katayama-Yoshida, Journal of Applied Physics, AMER INST PHYSICS, Vol. 127, No. 8, 2020/02/24
  • Speckle Reduction by Driving Current Modulation for Red Semiconductor Laser Diodes, Takehiro Nishida,Yasufumi Fujiwara,Kazuhisa Yamamoto,Atsushi Koizumi,Tetsuya Yagi, IEEJ Transactions on Electronics, Information and Systems, Institute of Electrical Engineers of Japan (IEE Japan), Vol. 140, No. 2, p. 181-186, 2020/02/01
  • Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN, D. Timmerman,B. Mitchell,S. Ichikawa,J. Tatebayashi,M. Ashida,Y. Fujiwara, Physical Review Applied, American Physical Society (APS), Vol. 13, No. 1, p. 014044-014044, 2020/01/24
  • Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology, B. Mitchell,D. Timmerman,W. Zhu,J. Y. Lin,H. X. Jiang,J. Poplawsky,R. Ishii,Y. Kawakami,V. Dierolf,J. Tatebayashi,S. Ichikawa,Y. Fujiwara, Journal of Applied Physics, Vol. 127, No. 1, p. 013102-013102, 2020/01/07
  • High brightness and RGB integration of eu-doped GaN-based red LEDs for ultrahigh-resolution micro-LED display, Yasufumi Fujiwara,Shuhei Ichikawa,Dolf Timmerman,Jun Tatebayashi, Digest of Technical Papers - SID International Symposium, Vol. 51, No. 1, p. 691-694, 2020
  • Strong crystal field splitting and polarization dependence observed in the emission from Eu<sup>3+</sup> ions doped into GaN, S. Copelman,H. Austin,D. Timmerman,J. D. Poplawsky,M. Waite,J. Tatebayashi,S. Ichikawa,Y. Fujiwara,V. Dierolf,B. Mitchell, Proceedings of SPIE - The International Society for Optical Engineering, SPIE, Vol. 11302, 2020
  • Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD, A. Lesage,D. Timmerman,T. Inaba,T. Gregorkiewicz,Y. Fujiwara, Scientific Reports, Vol. 9, No. 1, p. 4231-4231, 2019/12/01
  • 16.3: Invited Paper: New development in Red Light‐emitting Diodes (LEDs) using Eu‐doped GaN for Monolithic Micro‐LED Displays, Yasufumi FUJIWARA,Shuhei ICHIKAWA,Jun TATEBAYASHI, SID Symposium Digest of Technical Papers, Wiley, Vol. 50, No. S1, p. 167-167, 2019/09
  • Localized-surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes utilizing silver nanoparticles, Jun Tatebayashi,Tomoya Yamada,Tomohiro Inaba,Dolf Timmerman,Shuhei Ichikawa,Yasufumi Fujiwara, Applied Physics Express, IOP PUBLISHING LTD, Vol. 12, No. 9, p. 083901-083901, 2019/09/01
  • Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of e u3+ ions, Ruoqiao Wei,Brandon Mitchell,Dolf Timmerman,Tom Gregorkiewicz,Wanxin Zhu,Jun Tatebayashi,Shuhei Ichikawa,Yasufumi Fujiwara,Volkmar Dierolf, Physical Review B, AMER PHYSICAL SOC, Vol. 100, No. 8, p. 081201(R)-081201(R), 2019/08/02
  • Frontiers of Nitride Semiconductor Research FOREWORD, Shigefusa F. Chichibu,Yoshinao Kumagai,Kazunobu Kojima,Momoko Deura,Toru Akiyama,Munetaka Arita,Hiroshi Fujioka,Yasufumi Fujiwara,Naoki Hara,Tamotsu Hashizume,Hideki Hirayama,Mark Holmes,Yoshio Honda,Masataka Imura,Ryota Ishii,Yoshihiro Ishitani,Motoaki Iwaya,Satoshi Kamiyama,Yoshihiro Kangawa,Ryuji Katayama,Yoichi Kawakami,Takahiro Kawamura,Atsushi Kobayashi,Masaaki Kuzuhara,Koh Matsumoto,Yusuke Mori,Takashi Mukai,Hisashi Murakami,Hideaki Murotani,Satoshi Nakazawa,Narihito Okada,Yoshiki Saito,Akira Sakai,Hiroto Sekiguchi,Koji Shiozaki,Kanako Shojiki,Jun Suda,Tetsuya Takeuchi,Tomoyuki Tanikawa,Jun Tatebayashi,Shigetaka Tomiya,Yoichi Yamada, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 58, 2019/06
  • Color-Tunablility in GaN LEDs Based on Atomic Emission Manipulation under Current Injection, Brandon Mitchell,Ruoqiao Wei,Junichi Takatsu,Dolf Timmerman,Tom Gregorkiewicz,Wanxin Zhu,Shuhei Ichikawa,Jun Tatebayashi,Yasufumi Fujiwara,Volkmar Dierolf, ACS Photonics, AMER CHEMICAL SOC, Vol. 6, No. 5, p. 1153-1161, 2019/05/15
  • Broad range thickness identification of hexagonal boron nitride by colors, Yuto Anzai,Mahito Yamamoto,Shingo Genchi,Kenji Watanabe,Takashi Taniguchi,Shuhei Ichikawa,Yasufumi Fujiwara,Hidekazu Tanaka, Applied Physics Express, IOP PUBLISHING LTD, Vol. 12, No. 5, p. 055007-055007, 2019/05/01
  • Defect compatible defect engineering of eu-doped gallium nitride for red LED applications, B. Mitchell,D. Timmerman,W. Zhu,Y. Fujiwara,V. Dierolf, Proceedings 2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference, CLEO/Europe-EQEC 2015, 2019
  • Picosecond Time-Resolved Excitation Dynamics and Emission Manipulation of Eu3+ Ions Doped into GaN, Brandon Mitchell,Ruoqiao Wei,Dolf Timmerman,Tom Gregorkiewicz,Shuhei Ichikawa,Jun Tatebayashi,Volkmar Dierolf,Yasufumi Fujiwara, 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), IEEE, 2019
  • Control of the energy transfer between Tm3+ and Yb3+ ions in ZnO nanowires for photovoltaic applications, Jun Tatebayashi,Tokuhito Nakajima,Masao Mishina,Dolf Timmerman,Shuhei Ichikawa,Yasufumi Fujiwara, 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), IEEE, 2019
  • High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminated GaN(0001) surface, Shinya Yamada,Yuki Goto,Jun Tatebayashi,Shuhei Ichikawa,Yasufumi Fujiwara,Kohei Hamaya, 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), IEEE, 2019
  • Enhanced luminescence efficiency of GaN:Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles, Jun Tatebayashi,Tomoya Yamada,Tomohiro Inaba,Shuhei Ichikawa,Yasufumi Fujiwara, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 58, No. SC, p. SCC09/1-SCC09/6, 2019
  • Formation and optical properties of Tm,Yb-codoped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition, J. Tatebayashi,G. Yoshii,T. Nakajima,M. Mishina,Y. Fujiwara, Journal of Crystal Growth, Vol. 503, p. 13-19, 2018/12/01
  • Efficient carrier multiplication in CsPbI<inf>3</inf> perovskite nanocrystals, Chris de Weerd,Leyre Gomez,Antonio Capretti,Delphine M. Lebrun,Eiichi Matsubara,Junhao Lin,Masaaki Ashida,Frank C.M. Spoor,Laurens D.A. Siebbeles,Arjan J. Houtepen,Kazutomo Suenaga,Yasufumi Fujiwara,Tom Gregorkiewicz, Nature Communications, NATURE PUBLISHING GROUP, Vol. 9, No. 1, 2018/12/01
  • Hot-carrier-mediated impact excitation of Er<sup>3+</sup> ions in SiO<inf>2</inf> sensitized by Si Nanocrystals, A. Lesage,D. Timmerman,D. M. Lebrun,Y. Fujiwara,T. Gregorkiewicz, Applied Physics Letters, Vol. 113, No. 3, 2018/07/16
  • Effect of surface treatment of printed Ag Schottky contacts on n-GaN epitaxial layers using Ag nanoink: Two dimensional characterization by scanning internal photoemission microscopy, Kenji Shiojima,Yukiyasu Kashiwagi,Tasuku Shigemune,Atsushi Koizumi,Takanori Kojima,Masashi Saitoh,Takahiro Hasegawa,Masaya Chigane,Yasufumi Fujiwara, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 57, No. 7, 2018/07
  • Measuring the practical particle-in-a-box: Orthorhombic perovskite nanocrystals, Brandon Mitchell,Eric Herrmann,Junhao Lin,Leyre Gomez,Chris De Weerd,Yasufumi Fujiwara,Kazutomo Suenaga,Tom Gregorkiewicz, European Journal of Physics, IOP PUBLISHING LTD, Vol. 39, No. 5, 2018/06/27
  • Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals, M. O. Nestoklon,S. V. Goupalov,R. I. Dzhioev,O. S. Ken,V. L. Korenev,Yu G. Kusrayev,V. F. Sapega,C. De Weerd,L. Gomez,T. Gregorkiewicz,Junhao Lin,Kazutomo Suenaga,Yasufumi Fujiwara,L. B. Matyushkin,I. N. Yassievich, Physical Review B, AMER PHYSICAL SOC, Vol. 97, No. 23, 2018/06/06
  • Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy, J. Takatsu,R. Fuji,J. Tatebayashi,D. Timmerman,A. Lesage,T. Gregorkiewicz,Y. Fujiwara, Journal of Applied Physics, AIP Publishing, Vol. 123, No. 16, p. 161406-161406, 2018/04/28
  • Control of the energy transfer between Tm3+ and Yb3+ ions in Tm,Yb-codoped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition, J. Tatebayashi,G. Yoshii,T. Nakajima,H. Kamei,J. Takatsu,D. M. Lebrun,Y. Fujiwara, Journal of Applied Physics, AIP Publishing, Vol. 123, No. 16, p. 161409-161409, 2018/04/28
  • Perspective: Toward efficient GaN-based red light emitting diodes using europium doping, Brandon Mitchell,Volkmar Dierolf,Tom Gregorkiewicz,Yasufumi Fujiwara, Journal of Applied Physics, AIP Publishing, Vol. 123, No. 16, p. 160901-160901, 2018/04/28
  • Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy, Tomohiro Inaba,Takanori Kojima,Genki Yamashita,Eiichi Matsubara,Brandon Mitchell,Reina Miyagawa,Osamu Eryu,Jun Tatebayashi,Masaaki Ashida,Yasufumi Fujiwara, Journal of Applied Physics, AIP Publishing, Vol. 123, No. 16, p. 161419-161419, 2018/04/28
  • Preface to Special Topic: Defects in Semiconductors, Tetsuya Yamamoto,Yasufumi Fujiwara,Kohei M. Itoh, Journal of Applied Physics, AMER INST PHYSICS, Vol. 123, No. 16, 2018/04
  • Re-Excitation of Trivalent Europium Ions Doped into Gallium Nitride Revealed through Photoluminescence under Pulsed Laser Excitation, Wanxin Zhu,Ruoqiao Wei,Dolf Timmerman,Tom Gregorkiewicz,Brandon Mitchell,Yasufumi Fujiwara,Volkmar Dierolf, ACS Photonics, AMER CHEMICAL SOC, Vol. 5, No. 3, p. 875-880, 2018/03/21
  • Correction to “Hybridization of Single Nanocrystals of Cs4PbBr6 and CsPbBr3”, Chris de Weerd,Junhao Lin,Leyre Gomez,Yasufumi Fujiwara,Kazutomo Suenaga,Tom Gregorkiewicz, The Journal of Physical Chemistry C, American Chemical Society (ACS), Vol. 122, No. 7, p. 4116-4116, 2018/02/22
  • Extraordinary Interfacial Stitching between Single All-Inorganic Perovskite Nanocrystals, Leyre Gomez,Junhao Lin,Chris De Weerd,Lucas Poirier,Simon C. Boehme,Elizabeth Von Hauff,Yasufumi Fujiwara,Kazutomo Suenaga,Tom Gregorkiewicz, ACS Applied Materials and Interfaces, AMER CHEMICAL SOC, Vol. 10, No. 6, p. 5984-5991, 2018/02/14
  • Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials FOREWORD, Shigeya Naritsuka,Seiichi Miyazaki,Yasufumi Fujiwara,Mineo Hiramatsu,Yasushi Inoue,Kenji Ishikawa,Masafumi Ito,Takashi Itoh,Makoto Kasu,Hideto Miyake,Minoru Sasaki,Tatsuru Shirafuji,Yoshiyuki Suda, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 57, No. 1, 2018/01
  • Wavelength-stable and Narrow-band Red LED for monolithic micro-LED display, Yasufumi Fujiwara,Tomohiro Inaba,Keishi Shiomi,Shuhei Ichikawa,Jun Tatebayashi, Proceedings of the International Display Workshops, Vol. 1, p. 418-420, 2018
  • Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes, Ioannis E. Fragkos,Chee Keong Tan,Volkmar Dierolf,Yasufumi Fujiwara,Nelson Tansu, Scientific Reports, NATURE PUBLISHING GROUP, Vol. 7, No. 1, p. 14648-14648, 2017/12/01
  • Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes, Ioannis E. Fragkos,Volkmar Dierolf,Yasufumi Fujiwara,Nelson Tansu, Scientific Reports, NATURE PUBLISHING GROUP, Vol. 7, No. 1, p. 16773-16773, 2017/12/01
  • Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes, Ioannis E. Fragkos,Chee Keong Tan,Volkmar Dierolf,Yasufumi Fujiwara,Nelson Tansu, 30th Annual Conference of the IEEE Photonics Society, IPC 2017, IEEE, Vol. 2017-January, p. 275-276, 2017/11/20
  • Hybridization of Single Nanocrystals of Cs<inf>4</inf>PbBr<inf>6</inf> and CsPbBr<inf>3</inf>, Chris De Weerd,Junhao Lin,Leyre Gomez,Yasufumi Fujiwara,Kazutomo Suenaga,Tom Gregorkiewicz, Journal of Physical Chemistry C, AMER CHEMICAL SOC, Vol. 121, No. 35, p. 19490-19496, 2017/09/07
  • Charge state of vacancy defects in Eu-doped GaN, B. Mitchell,N. Hernandez,D. Lee,A. Koizumi,Y. Fujiwara,V. Dierolf, Physical Review B, Vol. 96, No. 6, p. 064308-064308, 2017/08/31
  • Detection of In segregation in InGaN by using Eu as a probe, Junichi Takatsu,Brandon Mitchell,Atsushi Koizumi,Shuhei Yamanaka,Masaaki Matsuda,Tom Gregorkiewicz,Takanori Kojima,Yasufumi Fujiwara, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 468, p. 831-834, 2017/06/15
  • Surface morphology and optical properties of Eu<sup>3+</sup> ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy, Ryoken Fuji,Brandon Mitchell,Atsushi Koizumi,Tomohiro Inaba,Yasufumi Fujiwara, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 468, p. 862-865, 2017/06/15
  • Synthesis and characterization of a liquid Eu precursor (EuCp<sup>pm</sup><inf>2</inf>) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy, Brandon Mitchell,Atsushi Koizumi,Takumi Nunokawa,Ryuta Wakamatsu,Dong gun Lee,Yasuhisa Saitoh,Dolf Timmerman,Yoshinori Kuboshima,Takayuki Mogi,Shintaro Higashi,Kaoru Kikukawa,Hironori Ofuchi,Tetsuo Honma,Yasufumi Fujiwara, Materials Chemistry and Physics, ELSEVIER SCIENCE SA, Vol. 193, p. 140-146, 2017/06/01
  • Emission enhancement and its mechanism of Eu-doped GaN by strain engineering, Tomohiro Inaba,Brandon Mitchell,Atsushi Koizumi,Yasufumi Fujiwara, Optical Materials Express, OPTICAL SOC AMER, Vol. 7, No. 4, p. 1381-1387, 2017/04
  • Multiexciton lifetime in all-inorganic CsPbBr<inf>3</inf> perovskite nanocrystals, Elinore M.L.D. De Jong,Genki Yamashita,Leyre Gomez,Masaaki Ashida,Yasufumi Fujiwara,Tom Gregorkiewicz, Journal of Physical Chemistry C, AMER CHEMICAL SOC, Vol. 121, No. 3, p. 1941-1947, 2017/01/26
  • Dimerization of emission centers in Eu-doped GaN red light-emitting diode: Cooperative charge capturing using valence states coupling, Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara, Journal of Physics Condensed Matter, IOP PUBLISHING LTD, Vol. 29, No. 2, p. 025709-025709, 2017/01/18
  • High-Power Eu-Doped GaN Red LED Based on a Multilayer Structure Grown at Lower Temperatures by Organometallic Vapor Phase Epitaxy, W. Zhu,B. Mitchell,D. Timmerman,A. Koizumi,T. Gregorkiewicz,Y. Fujiwara, MRS Advances, Vol. 2, No. 3, p. 159-164, 2017
  • Investigation of high level injection state of PiN diodes by comparing simulation results and analytical theory, Tomohide Terashima,Yasufumi Fujiwara, IEEJ Transactions on Electronics, Information and Systems, Vol. 137, No. 7, p. 918-926, 2017
  • An analytical investigation for the switching loss of power devices, Tomohide Terashima,Yasufumi Fujiwara, IEEJ Transactions on Electronics, Information and Systems, Vol. 137, No. 9, p. 1219-1227, 2017
  • Advanced Plasma Science and Its Applications for Nitride and Nanomaterials FOREWORD, Takashi Itoh,Shigeya Naritsuka,Yasufumi Fujiwara,Mineo Hiramatsu,Makoto Kasu,Kazunori Koga,Hiroki Kondo,Koh Matsumoto,Osamu Nakatsuka,Kiichi Niitsu,Tomohiro Nozaki,Takayuki Ohta,Osamu Sakai,Hideki Sato,Tetsuya Takeuchi,Giichiro Uchida, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 56, No. 1, 2017/01
  • Foreword: Advanced plasma science and its applications for nitride and nanomaterials, Takashi Itoh,Shigeya Naritsuka,Yasufumi Fujiwara,Mineo Hiramatsu,Makoto Kasu,Kazunori Koga,Hiroki Kondo,Koh Matsumoto,Osamu Nakatsuka,Kiichi Niitsu,Tomohiro Nozaki,Takayuki Ohta,Osamu Sakai,Hideki Sato,Tetsuya Takeuchi,Giichiro Uchida, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 56, No. 1, 2017/01
  • Optical and Electrical Study of Defects in GaN In Situ Doped with Eu<sup>3+</sup> Ion Grown by OMVPE, Jingzhou Wang,Atsushi Koizumi,Yasufumi Fujiwara,Wojciech M. Jadwisienczak, Journal of Electronic Materials, SPRINGER, Vol. 45, No. 12, p. 6355-6362, 2016/12/01
  • Direct Observation of Band Structure Modifications in Nanocrystals of CsPbBr<inf>3</inf> Perovskite, Junhao Lin,Leyre Gomez,Chris De Weerd,Yasufumi Fujiwara,Tom Gregorkiewicz,Kazutomo Suenaga, Nano Letters, AMER CHEMICAL SOC, Vol. 16, No. 11, p. 7198-7202, 2016/11/09
  • Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 01 } and { 2 2 01 } InGaN/GaN quantum wells, Takanori Kojima,Shota Takano,Ryosuke Hasegawa,Dolf Timmerman,Atsushi Koizumi,Mitsuru Funato,Yoichi Kawakami,Yasufumi Fujiwara, Applied Physics Letters, AMER INST PHYSICS, Vol. 109, No. 18, p. 182101-182101, 2016/10/31
  • Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method, Ngo Ngoc Ha,Atsushi Nishikawa,Yasufumi Fujiwara,Tom Gregorkiewicz, Journal of Science: Advanced Materials and Devices, VIETNAM NATL UNIV, Vol. 1, No. 2, p. 220-223, 2016/06
  • Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment, W. Zhu,B. Mitchell,D. Timmerman,A. Uedono,A. Koizumi,Y. Fujiwara, APL Materials, Vol. 4, No. 5, p. 056103-056103, 2016/05/01
  • Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity, Tomohiro Inaba,Dong Gun Lee,Ryuta Wakamatsu,Takanori Kojima,Brandon Mitchell,Antonio Capretti,Tom Gregorkiewicz,Atsushi Koizumi,Yasufumi Fujiwara, AIP Advances, AMER INST PHYSICS, Vol. 6, No. 4, p. 045105-045105, 2016/04
  • Study of Defects in GaN In Situ Doped with Eu<sup>3+</sup> Ion Grown by OMVPE, Jingzhou Wang,Atsushi Koizumi,Yasufumi Fujiwara,Wojciech M. Jadwisienczak, Journal of Electronic Materials, SPRINGER, Vol. 45, No. 4, p. 2001-2007, 2016/04
  • Growth of Eu-doped GaN and its magneto-optical properties, A. Koizumi,B. Mitchell,V. Dierolf,Y. Fujiwara, Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics, p. 259-280, 2016/02/23
  • Electron spin resonance studies of GaAs: Er,O, H. Ohta,S. Okubo,Y. Fujiwara, Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics, p. 169-194, 2016/02/23
  • Evaluation of crystallinity of GaN epitaxial layer after wafer dicing, Hideyuki Taguchi,Shugo Miyake,Atsushi Suzuki,Satoshi Kamiyama,Yasufumi Fujiwara, Materials Science in Semiconductor Processing, ELSEVIER SCI LTD, Vol. 41, p. 89-91, 2016/01/29
  • Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity, Yasufumi Fujiwara,Tomohiro Inaba,Takanori Kojima,Atsushi Koizumi, 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Vol. 2, 2016/01/07
  • Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications, B. Mitchell,D. Timmerman,J. Poplawsky,W. Zhu,D. Lee,R. Wakamatsu,J. Takatsu,M. Matsuda,W. Guo,K. Lorenz,E. Alves,A. Koizumi,V. Dierolf,Y. Fujiwara, Scientific Reports, Vol. 6, p. 18808-18808, 2016/01/04
  • Foreword: Advanced plasma science and its applications for nitride and nanomaterials, Akihiro Wakahara,Osamu Nakatsuka,Minoru Sasaki,Kazuo Terashima,Hiroshi Amano,Takashi Egawa,Yasufumi Fujiwara,Mineo Hiramatsu,Ryoichi Ichino,Yasushi Inoue,Masafumi Ito,Makoto Kasu,Hiroki Kondo,Seiichi Miyazaki,Kazuaki Sawada,Makoto Sekine,Yuichi Setsuhara,Masaharu Shiratani,Hirofumi Takikawa,Yoshimi Watanabe, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 55, No. 1, 2016/01
  • Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current, Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 55, No. 1, p. 015801-015801, 2016/01
  • Resonant energy transfer between Eu luminescent sites and their local geometry in GaN, Dolf Timmerman,Ryuta Wakamatsu,Kazuteru Tanaka,Dong Gun Lee,Atsushi Koizumi,Yasufumi Fujiwara, Applied Physics Letters, AMER INST PHYSICS, Vol. 107, No. 15, p. 151107-151107, 2015/10/12
  • Three-dimensional spectrum mapping of bright emission centers: Investigating the brightness-limiting process in Eu-doped GaN red light emitting diodes, Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara, Applied Physics Letters, AMER INST PHYSICS, Vol. 107, No. 8, p. 082106-082106, 2015/08/24
  • Fabrication and characterization of GaN-based blue light-emitting diode with electrodes formed by screen printing, Tasuku Shigemune,Atsushi Koizumi,Yukiyasu Kashiwagi,Hiroshi Kakiuchi,Yasutaka Takemura,Shinya Furuta,Mari Yamamoto,Masashi Saitoh,Masanari Takahashi,Toshinobu Ohno,Masami Nakamoto,Nobuyoshi Aoyagi,Yukio Yoshida,Koichiro Murahashi,Kuniaki Otsuka,Yasufumi Fujiwara, Zairyo/Journal of the Society of Materials Science, Japan, Society of Materials Science, Japan, Vol. 64, No. 5, p. 414-416, 2015/05/01
  • Nanoscale determinant to brighten up GaN:Eu red light-emitting diode: Local potential of Eu-defect complexes, Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara, Journal of Applied Physics, AMER INST PHYSICS, Vol. 117, No. 15, 2015/04
  • In situ Eu doping into Al<inf>x</inf>Ga<inf>1-x</inf>N grown by organometallic vapor phase epitaxy to improve luminescence properties, Atsushi Koizumi,Kosuke Kawabata,Dong Gun Lee,Atsushi Nishikawa,Yoshikazu Terai,Hironori Ofuchi,Tetsuo Honma,Yasufumi Fujiwara, Optical Materials, ELSEVIER SCIENCE BV, Vol. 41, p. 75-79, 2015/03/01
  • Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy, Takanori Arai,Dolf Timmerman,Ryuta Wakamatsu,Dong Gun Lee,Atsushi Koizumi,Yasufumi Fujiwara, Journal of Luminescence, ELSEVIER SCIENCE BV, Vol. 158, p. 70-74, 2015/02
  • Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film, Masaaki Nakayama,Satoshi Nakamura,Hideo Takeuchi,Atsushi Koizumi,Yasufumi Fujiwara, Applied Physics Letters, AMER INST PHYSICS, Vol. 106, No. 1, p. 012102-012102, 2015/01/05
  • 24aBK-9 Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film, Nakamura Satoshi,Takeuchi Hideo,Koizumi Atsushi,Fujiwara Yasufumi,Nakayama Masaaki, Meeting Abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 70, p. 1416-1416, 2015
  • Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode, Y. Kashiwagi,A. Koizumi,Y. Takemura,S. Furuta,M. Yamamoto,M. Saitoh,M. Takahashi,T. Ohno,Y. Fujiwara,K. Murahashi,K. Ohtsuka,M. Nakamoto, Applied Physics Letters, Vol. 105, No. 22, p. 223509-223509, 2014/12/01
  • Advanced plasma science and its applications for nitride and nanomaterials, Satoshi Kamiyama,Yasufumi Fujiwara,Mineo Hiramatsu,Masafumi Ito,Toshiro Kaneko,Makoto Kasu,Hideto Miyake,Keiji Nakamura,Kazuaki Sawada,Makoto Sekine,Yuichi Setsuhara,Tatsuru Shirafuji,Hirofumi Takikawa,Kazuo Terashima,Akihiro Wakahara,Yoshimi Watanabe, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 53, No. 11, 2014/11/01
  • Enhancement in light efficiency of a GaN:Eu red light-emitting diode by pulse-controlled injected charges, Masashi Ishii,Atsushi Koizumi,Yasufumi Fujiwara, Applied Physics Letters, AMER INST PHYSICS, Vol. 105, No. 17, p. 171903-171903, 2014/10/27
  • Afterglow of Eu-related emission in Eu-doped gallium nitride grown by organometallic vapor phase epitaxy, R. Wakamatsu,D. Timmerman,D. Lee,A. Koizumi,Y. Fujiwara, Journal of Applied Physics, AMER INST PHYSICS, Vol. 116, No. 4, p. 043515-043515, 2014/07/28
  • Sputtering-assisted metal-organic chemical vapor deposition of Yb-doped ZnO for photonic conversion in Si solar cells, Ryutaro Okada,Wei Miao,Yoshikazu Terai,Takahiro Tsuji,Yasufumi Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 11, No. 7-8, p. 1292-1295, 2014/07
  • Optical excitation and external photoluminescence quantum efficiency of Eu<sup>3+</sup> in GaN, W. D.A.M. De Boer,C. McGonigle,T. Gregorkiewicz,Y. Fujiwara,S. Tanabe,P. Stallinga, Scientific Reports, Vol. 4, p. 5235-5235, 2014/06/10
  • The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers, B. Mitchell,J. Poplawsky,D. Lee,A. Koizumi,Y. Fujiwara,V. Dierolf, Journal of Applied Physics, AMER INST PHYSICS, Vol. 115, No. 20, p. 204501-204501, 2014/05/28
  • Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers, F. Elmasry,S. Okubo,H. Ohta,Y. Fujiwara, Journal of Applied Physics, AMER INST PHYSICS, Vol. 115, No. 19, p. 193904-193904, 2014/05/21
  • Thermodynamics and kinetics of three Mg-H-V N complexes in Mg:GaN from combined first-principles calculation and experiment, Donghwa Lee,Brandon Mitchell,Y. Fujiwara,V. Dierolf, Physical Review Letters, Vol. 112, No. 20, p. 205501-205501, 2014/05/20
  • Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy, Yasufumi Fujiwara,Volkmar Dierolf, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 53, No. 5 SPEC. ISSUE 1, p. 05FA13-05FA13, 2014/05
  • Discrimination between energy transfer and back transfer processes for GaAs host and Er luminescent dopants using electric response analysis, Masashi Ishii,Atsushi Koizumi,Yoshikazu Takeda,Yasufumi Fujiwara, Journal of Applied Physics, AMER INST PHYSICS, Vol. 115, No. 13, p. 133510-133510, 2014/04
  • Speckle reduction by optimizing pulse width of drive current for red laser diodes, Takehiro Nishida,Tetsuya Yagi,Hiroshi Murata,Atsushi Koizumi,Yasufumi Fujiwara,Masayoshi Takemi, 21st International Display Workshops 2014, IDW 2014, Vol. 2, p. 1098-1101, 2014
  • Defect roles in the excitation of Eu ions in Eu:GaN, Jonathan D. Poplawsky,Atsushi Nishikawa,Yasufumi Fujiwara,Volkmar Dierolf, Optics Express, OPTICAL SOC AMER, Vol. 21, No. 25, p. 30633-30641, 2013/12/16
  • Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels, B. Mitchell,D. Lee,D. Lee,Y. Fujiwara,V. Dierolf, Applied Physics Letters, Vol. 103, No. 24, p. 242105-242105, 2013/12/09
  • Conduction properties of β-FeSi<inf>2</inf> epitaxial films with low carrier density, Yoshikazu Terai,Nozomu Suzuki,Keiichi Noda,Yasufumi Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 10, No. 12, p. 1696-1698, 2013/12
  • Formation of Eu<sup>3+</sup> luminescent centers in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition, Takahiro Tsuji,Yoshikazu Terai,Muhammad Hakim Bin Kamarudin,Yasufumi Fujiwara, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 52, No. 11 PART 1, p. 111101-111101, 2013/11
  • Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe, B. Mitchell,D. Lee,D. Lee,A. Koizumi,J. Poplawsky,Y. Fujiwara,V. Dierolf, Physical Review B - Condensed Matter and Materials Physics, Vol. 88, No. 12, p. 121202(R)-121202(R), 2013/09/30
  • Precisely Controlled Growth and Luminescence Properties of Rare-Earth Doped Semiconductors, KOIZUMI Atsushi,FUJIWARA Yasufumi, Journal of Smart Processing, Smart Processing Society for Materials, Environment & Energy (High Temperature Society of Japan), Vol. 2, No. 5, p. 213-218, 2013/09/20
  • Luminescence properties of Eu-doped GaN grown on GaN substrate, Ryuta Wakamatsu,Dong Gun Lee,Atsushi Koizumi,Volkmar Dierolf,Yoshikazu Terai,Yasufumi Fujiwara, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 52, No. 8 PART 2, p. 08JM03-08JM03, 2013/08
  • Control of Eu luminescence centers by codoping of Mg and Si into Eu-doped GaN, Dong Gun Lee,Ryuta Wakamatsu,Atsushi Koizumi,Yoshikazu Terai,Yasufumi Fujiwara, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 52, No. 8 PART 2, p. 08JM01-08JM01, 2013/08
  • Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites, Ryuta Wakamatsu,Dong Gun Lee,Atsushi Koizumi,Volkmar Dierolf,Yasufumi Fujiwara, Journal of Applied Physics, AMER INST PHYSICS, Vol. 114, No. 4, p. 043501-043501, 2013/07/28
  • Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy, Dong Gun Lee,Ryuta Wakamatsu,Atsushi Koizumi,Yoshikazu Terai,Jonathan D. Poplawsky,Volkmar Dierolf,Yasufumi Fujiwara, Applied Physics Letters, AMER INST PHYSICS, Vol. 102, No. 14, p. 141904-141904, 2013/04
  • Analysis of crystalline in GaN epitaxial layer after the wafer dicing process, Hideyuki Taguchi,Amane Kitahara,Shugo Miyake,Akimitu Nakaue,Yasufumi Fujiwara, Materials Research Society Symposium Proceedings, Springer Science and Business Media LLC, Vol. 1593, 2013
  • Advanced materials design of rare-earth-doped semiconductors by organometallic vapor phase epitaxy, Yasufumi Fujiwara,Yoshikazu Terai,Atsushi Nishikawa, Progress in Advanced Structural and Functional Materials Design, p. 261-272, 2013/01/01
  • Electronic materials and nanotechnology for green environment, Junichi Motohisa,Yasufumi Fujiwara,Masakazu Sugiyama,Kiyoshi Yase,Seung Ki Joo,Jinho Ahn,Jeong Min Baik,Kyeong Jae Byeon,Sung Yoon Chung,Deok Kee Kim,Hyounwoo Kim,Ju Young Kim,Young Keun Kim,Ki Young Ko,Jung Hyuk Koh,Bon Heun Koo,Hee Chul Lee,Heon Lee,Jeong Hoon Lee,Sang Yeol Lee,Sunyoung Caroline Lee,Byungwoo Park,In Sung Park,Jeong Woong Park,Won Il Park,Wooyoung Yoon, Japanese Journal of Applied Physics, Vol. 52, No. 10 PART2, 2013
  • Modification of Eu incorporation sites by the dissociation of hydrogen defect complexes in Mg and Eu Co-doped gallium nitride, B. Mitchell,J. Poplawsky,Y. Fujiwara,V. Dierolf, 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013, 2013
  • Dislocation generation in GaN by dicing process, Hideyuki Taguchi,Amane Kitahara,Syugo Miyake,Akimitu Nakaue,Atsushi Nishikawa,Yasufumi Fujiwara, Journal of Physics: Conference Series, IOP PUBLISHING LTD, Vol. 417, No. 1, 2013
  • Growth condition dependence of Ge-doped β-FeSi<inf>2</inf> epitaxial film by molecular beam epitaxy, Keiichi Noda,Yoshikazu Terai,Yasufumi Fujiwara, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 378, p. 376-380, 2013
  • Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition, Takahiro Tsuji,Yoshikazu Terai,Muhammad Hakim Bin Kamarudin,Kazuki Yoshida,Yasufumi Fujiwara, Journal of Luminescence, ELSEVIER SCIENCE BV, Vol. 132, No. 12, p. 3125-3128, 2012/12
  • Hybrid mesoporous-silica materials functionalized by Pt<sup>II</sup> complexes: Correlation between the spatial distribution of the active center, photoluminescence emission, and photocatalytic activity, Kohsuke Mori,Kentaro Watanabe,Yoshikazu Terai,Yasufumi Fujiwara,Hiromi Yamashita, Chemistry - A European Journal, WILEY-V C H VERLAG GMBH, Vol. 18, No. 36, p. 11371-11378, 2012/09/03
  • Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition, Takahiro Tsuji,Yoshikazu Terai,Muhammad Hakim Bin Kamarudin,Masatoshi Kawabata,Yasufumi Fujiwara, Journal of Non-Crystalline Solids, ELSEVIER SCIENCE BV, Vol. 358, No. 17, p. 2443-2445, 2012/09/01
  • OMVPE法によるEu添加GaNの選択成長と発光特性評価, 長谷川亮介,若松龍太,小泉淳,大渕博宣,一宮正義,李東建,寺井慶和,本間徹生,芦田昌明,藤原康文, 2012/09
  • Effect of residual impurities on transport properties of β-FeSi <inf>2</inf> epitaxial films grown by molecular beam epitaxy, Y. Terai,K. Yoneda,K. Noda,N. Miura,Y. Fujiwara, Journal of Applied Physics, AMER INST PHYSICS, Vol. 112, No. 1, 2012/07/01
  • Eu luminescence center created by Mg codoping in Eu-doped GaN, Dong Gun Lee,Atsushi Nishikawa,Yoshikazu Terai,Yasufumi Fujiwara, Applied Physics Letters, AMER INST PHYSICS, Vol. 100, No. 17, 2012/04
  • Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy, S. Emura,K. Higashi,A. Itadani,H. Torigoe,Y. Kuroda,A. Nishikawa,Y. Fujiwara,H. Asahi, Materials Research Society Symposium Proceedings, Vol. 1342, p. 15-20, 2012
  • Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy, Atsushi Nishikawa,Naoki Furukawa,Dong Gun Lee,Kosuke Kawabata,Takanori Matsuno,Yoshikazu Terai,Yasufumi Fujiwara, Materials Research Society Symposium Proceedings, Vol. 1342, p. 9-14, 2012
  • Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy, Jonathan Poplawsky,Nathaniel Woodward,Atsushi Nishikawa,Yasufumi Fujiwara,Volkmar Dierolf, Materials Research Society Symposium Proceedings, Vol. 1342, p. 21-26, 2012
  • Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy, K. Noda,Y. Terai,N. Miura,H. Udono,Y. Fujiwara, Physics Procedia, Vol. 23, p. 5-8, 2012
  • Site selective magneto-optical studies of Eu ions in gallium nitride, Nathaniel Woodward,Atsushi Nishikawa,Yasufumi Fujiwara,Volkmar Dierolf, Materials Research Society Symposium Proceedings, Vol. 1342, p. 111-115, 2012
  • Materials Research Society Symposium Proceedings: Preface, Volkmar Dierolf,Yasufumi Fujiwara,Tom Gregorkiewicz,Wojciech M. Jadwisienczak, Materials Research Society Symposium Proceedings, Vol. 1342, 2012
  • Recent progress in red LEDs with eu-doped GaN, Yasufumi Fujiwara, Advances in Optical Materials, AIOM 2012, 2012
  • Induced magnetic moment of Eu<sup>3+</sup> ions in GaN, V. Kachkanov,M. J. Wallace,G. Van Der Laan,S. S. Dhesi,S. A. Cavill,Y. Fujiwara,K. P. O'Donnell, Scientific Reports, Vol. 2, p. 969-969, 2012
  • Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy, Hajime Sasaki,Takayuki Hisaka,Kaoru Kadoiwa,Yoshikazu Terai,Yasufumi Fujiwara, IEICE Electronics Express, IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, Vol. 9, No. 20, p. 1592-1597, 2012
  • Optical Properties in Eu-doped GaN by Organometallic Vapor Phase Epitaxy and its Application to GaN-based Red Light-emitting Diodes, NISHIKAWA Atsushi,TERAI Yoshikazu,FUJIWARA Yasufumi, Journal of the Japanese Association of Crystal Growth, The Japanese Association for Crystal Growth (JACG), Vol. 38, No. 4, p. 270-273, 2012
  • Improvement of crystalline quality in GaAs layer grown on thermal cyclic annealed SOS, Kaoru Kadoiwa,Hajime Sasaki,Yoshikazu Terai,Yasufumi Fujiwara, Zairyo/Journal of the Society of Materials Science, Japan, Vol. 60, No. 11, p. 998-1003, 2011/11
  • Energy structure of Er-2O center in GaAs:Er,O studied by high magnetic field photoluminescence measurement, Hiroyasu Katsuno,Hitoshi Ohta,Oliver Portugall,Nicolas Ubrig,Masashi Fujisawa,Fatma Elmasry,Susumu Okubo,Yasufumi Fujiwara, Journal of Luminescence, ELSEVIER SCIENCE BV, Vol. 131, No. 11, p. 2294-2298, 2011/11
  • Bandgap modifications by lattice deformations in β-FeSi<inf>2</inf> epitaxial films, Y. Terai,K. Noda,K. Yoneda,H. Udono,Y. Maeda,Y. Fujiwara, Thin Solid Films, Vol. 519, No. 24, p. 8468-8472, 2011/10/03
  • ESD robustness improvement for integrated DMOS transistors -the different gate-voltage dependence of I<inf>t2</inf> between VDMOS and LDMOS transistors, Kenichi Hatasako,Fumitoshi Yamamoto,Akio Uenishi,Takashi Kuroi,Shigeto Maegawa,Yasufumi Fujiwara, IEEJ Transactions on Electrical and Electronic Engineering, WILEY, Vol. 6, No. 4, p. 361-366, 2011/07
  • Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy, A. Nishikawa,N. Furukawa,T. Kawasaki,Y. Terai,Y. Fujiwara, Optical Materials, Vol. 33, No. 7, p. 1071-1074, 2011/05
  • Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers, N. Woodward,A. Nishikawa,Y. Fujiwara,V. Dierolf, Optical Materials, Vol. 33, No. 7, p. 1050-1054, 2011/05
  • Electron spin resonance study of photoluminescent material GaAs:Er,O-Er concentration effect, Masashi Fujisawa,Atsushi Asakura,Fatma Elmasry,Susumu Okubo,Hitoshi Ohta,Yasufumi Fujiwara, Journal of Applied Physics, AMER INST PHYSICS, Vol. 109, No. 5, 2011/03/01
  • Fluorescence XAFS analysis of Eu-doped GaN layers grown by organometallic vapor phase epitaxy, Hironori Ofuchi,Tetsuo Honma,Takeshi Kawasaki,Naoki Furukawa,Atsushi Nishikawa,Yasufumi Fujiwara, e-Journal of Surface Science and Nanotechnology, Vol. 9, p. 51-53, 2011/02/19
  • Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy, Naoki Furukawa,Atsushi Nishikawa,Takashi Kawasaki,Yoshikazu Terai,Yasufumi Fujiwara, Physica Status Solidi (A) Applications and Materials Science, WILEY-BLACKWELL, Vol. 208, No. 2, p. 445-448, 2011/02
  • Photoluminescence properties of Eu<sup>3+</sup> ions in Eu-doped ZnO grown by sput- tering-assisted metalorganic chemical vapor deposition, Yoshikazu Terai,Kazuki Yoshida,M. H. Kamarudin,Yasufumi Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 8, No. 2, p. 519-521, 2011/02
  • Excitation of Eu<sup>3+</sup> in gallium nitride epitaxial layers: Majority versus trap defect center, N. Woodward,J. Poplawsky,B. Mitchell,A. Nishikawa,Y. Fujiwara,V. Dierolf, Applied Physics Letters, Vol. 98, No. 1, 2011/01/03
  • Photoluminescence and photoreflectance studies in Si/β-FeSi <inf>2</inf>/Si(001) double heterostructure, K. Yoneda,Y. Terai,K. Noda,N. Miura,Y. Fujiwara, Physics Procedia, Vol. 11, p. 185-188, 2011
  • Temperature dependence of direct transition energies in β-FeSi <inf>2</inf> epitaxial films on Si(111) substrate, K. Noda,Y. Terai,K. Yoneda,Y. Fujiwara, Physics Procedia, Vol. 11, p. 181-184, 2011
  • Recent progress in red light-emitting diodes with Eu-Doped GaN, Yasufumi Fujiwara,Atsushi Nishikawa,Yoshikazu Terai, Proceedings of the International Display Workshops, INST IMAGE INFORMATION & TELEVISION ENGINEERS, Vol. 2, p. 721-724, 2011
  • Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy, K. Lorenz,E. Alves,I. S. Roqan,K. P. O'Donnell,A. Nishikawa,Y. Fujiwara,M. Boćkowski, Applied Physics Letters, Vol. 97, No. 11, 2010/09/13
  • Growth temperature dependence of EU-doped GaN grown by organometallic vapor phase epitaxy, Atsushi Nishikawa,Takashi Kawasaki,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara, Zairyo/Journal of the Society of Materials Science, Japan, Vol. 59, No. 9, p. 671-674, 2010/09
  • Photoluminescence properties of Eu-Doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition, Yoshikazu Terai,Kazuki Yoshida,Yasufumi Fujiwara, Zairyo/Journal of the Society of Materials Science, Japan, Vol. 59, No. 9, p. 690-693, 2010/09
  • Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition, Y. Terai,K. Yamaoka,K. Yoshida,T. Tsuji,Y. Fujiwara, Physica E: Low-Dimensional Systems and Nanostructures, ELSEVIER SCIENCE BV, Vol. 42, No. 10, p. 2834-2836, 2010/09
  • Photoluminescence properties of Er-doped β-FeSi<inf>2</inf> grown by ion implantation, Y. Terai,T. Tsuji,K. Noda,Y. Fujiwara, Physica E: Low-Dimensional Systems and Nanostructures, ELSEVIER SCIENCE BV, Vol. 42, No. 10, p. 2846-2848, 2010/09
  • Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy, A. Nishikawa,N. Furukawa,T. Kawasaki,Y. Terai,Y. Fujiwara, Applied Physics Letters, AMER INST PHYSICS, Vol. 97, No. 5, 2010/08/02
  • Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy, Yohei Konaka,Ken Ichi Ono,Yoshikazu Terai,Yasufumi Fujiwara, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 312, No. 14, p. 2056-2059, 2010/07/01
  • Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE, Atsushi Nishikawa,Takashi Kawasaki,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara, Physica Status Solidi (A) Applications and Materials Science, WILEY-V C H VERLAG GMBH, Vol. 207, No. 6, p. 1397-1399, 2010/06
  • Photoluminescence measurement of Er,O-Codoped GaAs under a pulsed magnetic field up to 60 T, H. Ohta,O. Portugall,N. Ubrig,M. Fujisawa,H. Katsuno,E. Fatma,S. Okubo,Y. Fujiwara, Journal of Low Temperature Physics, Vol. 159, No. 1-2, p. 203-207, 2010/04
  • Improved Eu luminescence properties in eu-doped gan grown on gan substrates by organometallic vapor phase epitaxy, Hitoshi Kasai,Atsushi Nishikawa,Takashi Kawasaki,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 49, No. 4 PART 1, p. 0480011-0480012, 2010/04
  • Recent progress in rare-earth-doped semiconductors, Yasufumi Fujiwara,Atsushi Nishikawa,Yoshikazu Terai, 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010
  • Magnetic properties of magnetic semiconductor GaAs:Er,O studied by ESR, Masashi Fujisawa,Atsushi Asakura,Fatma Elmasry,Susumu Okubo,Hitoshi Ohta,Yasufumi Fujiwara, Journal of Physics: Conference Series, IOP PUBLISHING LTD, Vol. 200, No. SECTION 6, 2010
  • Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy, Takashi Kawasaki,Atsushi Nishikawa,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, WILEY-V C H VERLAG GMBH, Vol. 7, No. 7-8, p. 2040-2042, 2010
  • Present status and prospects of rare-earth-doped semiconductors, FUJIWARA Yasufumi,TERAI Yoshikazu,NISHIKAWA Atsushi, Vol. 79, No. 1, p. 25-31, 2010/01
  • Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection, Atsushi Nishikawa,Takashi Kawasaki,Naoki Furukawa,Yoshikazu Terai,Yasufumi Fujiwara, Applied Physics Express, IOP PUBLISHING LTD, Vol. 2, No. 7, 2009/07
  • Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature, Yoshikazu Terai,Takehiro Tokuno,Hideki Ichida,Yasuo Kanematsu,Yasufumi Fujiwara, Optical Materials, ELSEVIER SCIENCE BV, Vol. 31, No. 9, p. 1323-1326, 2009/07
  • Metaloraganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 μm photoluminescence, Keisuke Yamaoka,Yoshikazu Terai,Takashi Yamaguchi,Ha Ngoc Ngo,Tom Gregorkiewicz,Yasufumi Fujiwara, Journal of Physics: Conference Series, Vol. 165, 2009
  • Optical properties of Eu-implanted GaN and related-alloy semiconductors, A. Nishikawa,H. Kasai,T. Kawasaki,Y. Terai,Y. Fujiwara, Journal of Physics: Conference Series, Vol. 191, 2009
  • Low-temperature growth of GaAs with high quality by metalorganic vapor phase epitaxy, Harunori Sakaguchi,Tomoyoshi Mishima,Takeshi Meguro,Yasufumi Fujiwara, Journal of Physics: Conference Series, Vol. 165, 2009
  • Luminescence properties of Eu-implanted GaN-based semiconductors, H. Kasai,A. Nishikawa,Y. Terai,Y. Fujiwara, Journal of Physics: Conference Series, Vol. 165, 2009
  • Photoreflectance study of β-FeSi<inf>2</inf> epitaxial films grown by molecular beam epitaxy, Yoshikazu Terai,Keiichi Noda,Syoutaro Hashimoto,Yasufumi Fujiwara, Journal of Physics: Conference Series, Vol. 165, 2009
  • Development of new-type 1.5 μm light-emitting devices based on Er,O-codoped GaAs, Yasufumi Fujiwara,Yoshikazu Terai,Atsushi Nishikawa, Journal of Physics: Conference Series, Vol. 165, 2009
  • Epitaxial growth of Al-doped β-FeSi<inf>2</inf>on Si(111) substrate by reactive deposition epitaxy, Yoshikazu Terai,Syoutaro Hashimoto,Keiichi Noda,Yasufumi Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 6, No. 6, p. 1488-1491, 2009
  • Luminescence properties in Er, O-codoped GaAs light-emitting devices with double excitation mechanism, Y. Fujiwara,K. Fujii,A. Fujita,Y. Ota,Y. Ito,T. Kawasaki,K. Noguchi,T. Tsuji,A. Nishikawa,Y. Terai, Materials Research Society Symposium Proceedings, Vol. 1111, p. 143-148, 2009
  • Modifications of direct transition energies in Β -FeSi2 epitaxial films grown by molecular beam epitaxy, K. Noda,Y. Terai,S. Hashimoto,K. Yoneda,Y. Fujiwara, Applied Physics Letters, AMER INST PHYSICS, Vol. 94, No. 24, 2009
  • Epitaxial growth of Al-doped beta-FeSi(2) on Si(111) substrate by reactive deposition epitaxy, Yoshikazu Terai,Syoutaro Hashimoto,Keiichi Noda,Yasufumi Fujiwara, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6, WILEY-V C H VERLAG GMBH, Vol. 6, No. 6, p. 1488-1491, 2009
  • Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition, Yoshikazu Terai,Keisuke Yamaoka,Takashi Yamaguchi,Yasufumi Fujiwara, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, A V S AMER INST PHYSICS, Vol. 27, No. 5, p. 2248-2251, 2009
  • Room-temperature deposition of highly-insulating SiOCH films by plasma-enhanced chemical vapor deposition using tetraethoxysilane, Keisuke Yamaoka,Yoshikazu Terai,Yuji Yoshizako,Yasufumi Fujiwara, Thin Solid Films, ELSEVIER SCIENCE SA, Vol. 517, No. 2, p. 479-482, 2008/11/28
  • Organometallic vapor phase epitaxy of Er, O-codoped GaAs using tris(dipivaloylmethanato)erbium, Yoshikazu Terai,Keiji Hidaka,Takashi Hiramatsu,Yasufumi Fujiwara, Journal of Physics: Conference Series, IOP PUBLISHING LTD, Vol. 106, No. 1, p. 12007-12007, 2008/03/01
  • Metalorganic vapor phase epitaxial growth parameter dependence of phase separation in miscibility gap of InGaAsP, Kenichi Ono,Masayoshi Takemi,Yasufumi Fujiwara, Japanese Journal of Applied Physics, IOP PUBLISHING LTD, Vol. 47, No. 2 PART 1, p. 896-898, 2008/02/15
  • Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering, K. Yamaoka,Y. Terai,T. Yamaguchi,Y. Fujiwara, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, WILEY-V C H VERLAG GMBH, Vol. 5, No. 9, p. 3125-3127, 2008
  • Ultrafast photoexcited carrier dynamics in GaAs:Er,O by pump and probe transmission spectroscopy, K. Shimada,S. Takemoto,K. Hidaka,Y. Terai,M. Tonouchi,Y. Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 9, p. 2861-2863, 2008
  • GaAs emission from GaInP/Er,O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy, Kei Fujii,Keiji Hidaka,Dai Yamamoto,Yoshikazu Terai,Yasufumi Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 9, p. 2716-2718, 2008
  • Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering, K. Yamaoka,Y. Terai,T. Yamaguchi,Y. Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 9, p. 3125-3127, 2008
  • Improved initial epitaxial growth of β-FeSi2 on Si(111) substrate by Al-doping, Syoutaro Hashimoto,Yoshikazu Terai,Yasufumi Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 9, p. 3159-3161, 2008
  • GaAs emission from GaInP/Er, O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy, Kei Fujii,Keiji Hidaka,Dai Yamamoto,Yoshikazu Terai,Yasufumi Fujiwara, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, WILEY-V C H VERLAG GMBH, Vol. 5, No. 9, p. 2716-2718, 2008
  • Improved initial epitaxial growth of beta-FeSi2 on Si(111) substrate by Al-doping, Syoutaro Hashimoto,Yoshikazu Terai,Yasufumi Fujiwara, PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, WILEY-V C H VERLAG GMBH, Vol. 5, No. 9, p. 3159-3161, 2008
  • Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy, K. Shimada,Y. Terai,S. Takemoto,K. Hidaka,Y. Fujiwara,M. Suzuki,M. Tonouchi, Applied Physics Letters, Vol. 92, No. 11, 2008
  • Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy, Y. Terai,K. Hidaka,K. Fujii,S. Takemoto,M. Tonouchi,Y. Fujiwara, Applied Physics Letters, Vol. 93, No. 23, 2008
  • Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy, A. Fujita,T. Tokuno,K. Hidaka,K. Fujii,K. Tachibana,H. Ichida,Y. Terai,Y. Kanematsu,Y. Fujiwara, Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 9, p. 2864-2866, 2008
  • Ultrafast carrier trapping in Er-doped and Er,O-codoped GaAs revealed by pump and probe technique, Y. Fujiwara,S. Takemoto,K. Nakamura,K. Shimada,M. Suzuki,K. Hidaka,Y. Terai,M. Tonouchi, Physica B: Condensed Matter, ELSEVIER SCIENCE BV, Vol. 401-402, p. 234-237, 2007/12/15
  • Edge-Light Backlight Unit Using Optically Patterned Film with Plural Light-Emitting Diodes Placed on Side as Light Source, Katsuya Fujisawa,Ikuo Onishi,Yasufumi Fujiwara, Japanese Journal of Applied Physics, IOP Publishing, Vol. 46, No. No. 38, p. L933-L935, 2007/09/28
  • Low-temperature growth of GaAs by organometallic vapor phase epitaxy using TEGa and TBAs, Keiji Hidaka,Takashi Hiramatsu,Yoshikazu Terai,Osamu Eryu,Yasufumi Fujiwara, Zairyo/Journal of the Society of Materials Science, Japan, Vol. 56, No. 9, p. 880-885, 2007/09
  • Nondestructive investigation of β-FeSi<inf>2</inf>/Si interface by photoluminescence measurements, Yoshikazu Terai,Yoshihito Maeda,Yasufumi Fujiwara, Thin Solid Films, ELSEVIER SCIENCE SA, Vol. 515, No. 22, p. 8129-8132, 2007/08/15
  • Growth of suspended single-walled carbon nanotubes by laser-irradiated chemical vapor deposition, Y. Asai,Y. Fujiwara,Y. Ohno,K. Maehashi,K. Inoue,K. Matsumoto, Journal of Physics: Conference Series, Vol. 61, No. 1, p. 46-50, 2007/04
  • Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition, Kiyoshi Yasutake,Naotaka Tawara,Hiromasa Ohmi,Yoshikazu Terai,Hiroaki Kakiuchi,Heiji Watanabe,Yasufumi Fujiwara, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, INST PURE APPLIED PHYSICS, Vol. 46, No. 4 B, p. 2510-2515, 2007/04
  • Effect of plasma gases on insulating properties of low-temperature-deposited SiOCH films prepared by remote plasma-enhanced chemical vapor deposition, Keisuke Yamaoka,Naomichi Okada,Yuji Yoshizako,Yoshikazu Terai,Yasufumi Fujiwara, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, INST PURE APPLIED PHYSICS, Vol. 46, No. 4B, p. 1997-2000, 2007/04
  • Edge-light backlight unit using optically patterned film, Katsuya Fujisawa,Ikuo Onishi,Yasufumi Fujiwara, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, INST PURE APPLIED PHYSICS, Vol. 46, No. 1, p. 194-199, 2007/01/10
  • Direct observation of picosecond-scale energy-transfer processes in Er,O-codoped GaAs by pump-probe reflection technique, Yasufumi Fujiwara,Kazuhiko Nakamura,Shouichi Takemoto,Jun Ichi Sugino,Yoshikazu Terai,Masato Suzuki,Masayoshi Tonouchi, AIP Conference Proceedings, AMER INST PHYSICS, Vol. 893, p. 245-246, 2007
  • Carrier dynamics in Er,O-codoped GaAs revealed by time-resolved terahertz emission measurements, K. Shimada,Y. Terai,S. Takemoto,M. Suzuki,M. Tonouchi,Y. Fujiwara, IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics, IEEE, p. 486-487, 2007
  • Characterization of epitaxial silicon films grown by atmospheric pressure plasma chemical vapor deposition using porous carbon electrode, Japanese Journal of Applied Physics, Vol. Vol. 46, No. 4B, pp. 2510-2515., 2007
  • Low-temperature deposition of amorphous carbon films for surface passivation of carbon-doped silicon oxide, Keisuke Yamaoka,Yoshikazu Terai,Naomichi Okada,Takashi Yamaguchi,Yuji Yoshizako,Yasufumi Fujiwara, Advanced Materials Research, TRANS TECH PUBLICATIONS LTD, Vol. 24-25, p. 645-648, 2007
  • Magnetic properties of Er,O-codoped GaAs at low temperature, S. Takemoto,T. Terao,Y. Terai,M. Yoshida,A. Koizumi,H. Ohta,Y. Takeda,N. Fujimura,Y. Fujiwara, physica status solidi (c), Wiley, Vol. 3, No. 12, p. 4082-4085, 2006/12
  • Growth of bulk beta-FeSi2 crystals by annealing of well-aligned solidification structures, A Mishina,T Akahori,Y Terai,Yamauchi, I,Y Fujiwara, PHYSICA B-CONDENSED MATTER, ELSEVIER SCIENCE BV, Vol. 376, p. 795-798, 2006/04
  • Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane, K Yamaoka,Y Yoshizako,H Kato,D Tsukiyama,Y Terai,Y Fujiwara, PHYSICA B-CONDENSED MATTER, ELSEVIER SCIENCE BV, Vol. 376, p. 399-402, 2006/04
  • Formation of well alligned rod type eutectic structure for bulk β-FeSi <inf>2</inf> by solid reaction and its orientation analysis, Isamu Yamauchi,Akio Mishina,Tomohiko Akahori,Yasufumi Fujiwara, Zairyo/Journal of the Society of Materials Science, Japan, Vol. 55, No. 2, p. 148-152, 2006/02
  • Direct observation of trapping of photoexcited carriers in Er,O-codoped GaAs, Physica B, Vol. Vol. 376-377, pp. 556-559., 2006
  • Photoluminescence enhancement of beta-FeSi2 crystals by optimizing Al doping concentration, Physica B, Vol. Vol. 376-377, pp. 799-802., 2006
  • Thermal stability of SiOCH films deposited by room-temperature plasma-enhanced chemical vapor deposition using tetraethoxysilane, Keisuke Yamaoka,Yuji Yoshizako,Hideaki Kato,Daisuke Tsukiyama,Yoshikazu Terai,Yasufumi Fujiwara, Transactions of the Materials Research Society of Japan, Vol 31, No 2, ELSEVIER SCIENCE BV, Vol. 31, No. 2, p. 495-498, 2006
  • Behaviors of nonequilibrium carriers in Er,O-codoped GaAs for 1.5μm light-emitting devices with extremely stable wavelength, Yasufumi Fujiwara,Atsushi Koizumi,Kazuhiko Nakamura,Masato Suzuki,Yoshikazu Takeda,Masayoshi Tonouchi, Materials Science Forum, TRANS TECH PUBLICATIONS LTD, Vol. 512, p. 159-164, 2006
  • Plasma diagnosis of remote PECVD for SiOCH deposition at low temperature, Yuji Yoshizako,Daisuke Tsukiyama,Daisuke Nakamura,Keisuke Yamaoka,Yoshikazu Terai,Yasufumi Fujiwara, Transactions of the Materials Research Society of Japan, Vol 31, No 2, ELSEVIER SCIENCE BV, Vol. 31, No. 2, p. 499-502, 2006
  • Room-temperature operation of injection-type 1.5 μm light-emitting diodes with Er,O-codoped GaAs, Yasufumi Fujiwara, Materials Transactions, JAPAN INST METALS, Vol. 46, No. 9, p. 1969-1974, 2005/09
  • Position-controlled growth of single-walled carbon nanotubes by laser-irradiated chemical vapor deposition, Y Fujiwara,K Maehashi,Y Ohno,K Inoue,K Matsumoto, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 44, No. 4A, p. 1581-1584, 2005/04
  • Electron spin resonance study of Zn-codoping effect on the local structure of the Er -related centers in GaAs:Er,O, Makoto Yoshida,Kensaku Hiraka,Hitoshi Ohta,Yasufumi Fujiwara,Atsushi Koizumi,Yoshikazu Takeda, Journal of Applied Physics, AMER INST PHYSICS, Vol. 97, No. 2, p. 023909-1-023909-4, 2005/01/15
  • Materials Research Society Symposium Proceedings: Preface, Tom Gregorkiewicz,Yasufumi Fujiwara,Michal Lipson,John M. Zavada, Materials Research Society Symposium Proceedings, Vol. 866, 2005
  • Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO, Zhen Zhou,N. Sato,T. Komaki,A. Koizumi,T. Komori,M. Morinaga,Y. Fujiwara,Y. Takeda, Materials Science Forum, TRANS TECH PUBLICATIONS LTD, Vol. 475-479, No. II, p. 1125-1128, 2005
  • Erratum: Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/lnP multiple quantum wells (Applied Physics Letters (2004) 84 (4436)), I. Yamakawa,R. Oga,Y. Fujiwara,Y. Takeda,A. Nakamura, Applied Physics Letters, Vol. 85, No. 17, 2004/10/25
  • Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy, Makoto Yoshida,Kensaku Hiraka,Hitoshi Ohta,Yasufumi Fujiwara,Atsushi Koizumi,Yoshikazu Takeda, Journal of Applied Physics, AIP Publishing, Vol. 96, No. 8, p. 4189-4196, 2004/10/15
  • Fabrication of InAs quantum dots by droplet heteroepitaxy on periodic arrays of InP nanopyramids, Y. Yoshida,R. Oga,W.S. Lee,Y. Fujiwara,Y. Takeda, Thin Solid Films, Elsevier BV, Vol. 464-465, p. 240-243, 2004/10
  • Photoluminescence around 1.54 μm from Er-containing ZnO at room temperature, Zhen Zhou,Takanao Komaki,Atsushi Koizumi,Toshitaka Komori,Masahito Yoshino,Masahiko Morinaga,Yasufumi Fujiwara,Yoshikazu Takeda, Materials Transactions, JAPAN INST METALS, Vol. 45, No. 7, p. 2003-2007, 2004/07
  • Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/InP multiple quantum wells, Yamakawa, I,R Oga,Y Fujiwara,Y Takeda,A Nakamura, APPLIED PHYSICS LETTERS, AMER INST PHYSICS, Vol. 84, No. 22, p. 4436-4438, 2004/05
  • Composition dependence of energy structure and lattice structure in InGaAs/GaP, Shingo Fuchi,Youichi Nonogaki,Hiromitsu Moriya,Atsushi Koizumi,Yasufumi Fujiwara,Yoshikazu Takeda, Physica E: Low-Dimensional Systems and Nanostructures, ELSEVIER SCIENCE BV, Vol. 21, No. 1, p. 36-44, 2004/02
  • Effects of nitrogen irradiation on photoluminescence around 1.54 μm from Er-containing ZnO, Zhen Zhou,Takanao Komaki,Toshitaka Komori,Atsushi Koizumi,Masahito Yoshino,Noriaki Matsunami,Yoshikazu Takeda,Masahiko Morinaga, Materials Transactions, Japan Institute of Metals (JIM), Vol. 45, No. 9, p. 2906-2908, 2004
  • Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure OMVPE, Applied Surface Science, Vol. Vol. 237, pp. 246-250., 2004
  • Room temperature 1.5 μm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy, Y. Fujiwara,A. Koizumi,A. Urakami,T. Yoshikane,K. Inoue,Y. Takeda, Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ELSEVIER SCIENCE SA, Vol. 105, No. 1-3, p. 57-60, 2003/12/15
  • Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy, A. Koizumi,Y. Fujiwara,A. Urakami,K. Inoue,T. Yoshikane,Y. Takeda, Applied Physics Letters, AMER INST PHYSICS, Vol. 83, No. 22, p. 4521-4523, 2003/12/01
  • AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates, T Kuno,T Akane,S Jinno,T Hirata,Y Yang,Y Isogai,N Watanabe,Y Fujiwara,A Nakamura,Y Takeda, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCI LTD, Vol. 6, No. 5-6, p. 461-464, 2003/10
  • Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)<inf>3</inf>, H. Ofuchi,T. Akane,S. Jinno,T. Kuno,T. Hirata,M. Tabuchi,Y. Fujiwara,Y. Takeda,A. Nakamura, Materials Science in Semiconductor Processing, ELSEVIER SCI LTD, Vol. 6, No. 5-6, p. 469-472, 2003/10
  • SEM observation of InP/ErP/InP double heterostructures grown on InP(0 0 1), InP(1 1 1)A, and InP(1 1 1)B, T. Hirata,T. Akane,S. Jinno,T. Kuno,Y. Yang,Y. Fujiwara,A. Nakamura,Y. Takeda, Materials Science in Semiconductor Processing, ELSEVIER SCI LTD, Vol. 6, No. 5-6, p. 473-476, 2003/10
  • Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy, Ryo Oga,Woo Sik Lee,Yoshihiro Yoshida,Yasufumi Fujiwara,Yoshikazu Takeda, Materials Science in Semiconductor Processing, ELSEVIER SCI LTD, Vol. 6, No. 5-6, p. 477-480, 2003/10
  • AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp) <inf>3</inf> ), T. Akane,S. Jinno,Y. Yang,T. Kuno,T. Hirata,Y. Isogai,N. Watanabe,Y. Fujiwara,A. Nakamura,Y. Takeda, Applied Surface Science, ELSEVIER SCIENCE BV, Vol. 216, No. 1-4 SPEC., p. 537-541, 2003/06/30
  • Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy, A. Koizumi,Y. Fujiwara,K. Inoue,T. Yoshikane,A. Urakami,Y. Takeda, Applied Surface Science, ELSEVIER SCIENCE BV, Vol. 216, No. 1-4 SPEC., p. 560-563, 2003/06/30
  • Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy, Yasufumi Fujiwara,Yoichi Nonogaki,Ryo Oga,Atsushi Koizumi,Yoshikazu Takeda, Applied Surface Science, ELSEVIER SCIENCE BV, Vol. 216, No. 1-4 SPEC., p. 564-568, 2003/06/30
  • White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heteroepitaxy, R. Oga,W. S. Lee,Y. Fujiwara,Y. Takeda, Applied Physics Letters, AMER INST PHYSICS, Vol. 82, No. 25, p. 4546-4548, 2003/06/23
  • Room-temperature 1.54 μm light emission from Er,O-codoped GaAs/GaInP light-emitting diodes grown by low-pressure organometallic vapor phase epitaxy, Atsushi Koizumi,Yasufumi Fujiwara,Kentaro Inoue,Akira Urakami,Taketoshi Yoshikane,Yoshikazu Takeda, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, JAPAN SOC APPLIED PHYSICS, Vol. 42, No. 4 B, p. 2223-2225, 2003/04
  • Cross-sectional scanning tunneling microscopy study of interfacial roughness in an InGaAs/InP multiple quantum well structure grown by metalorganic vapor phase epitaxy, Ichirou Yamakawa,Takeshi Yamauchi,Ryo Oga,Yasufumi Fujiwara,Yoshikazu Takeda,Arao Nakamura, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, INST PURE APPLIED PHYSICS, Vol. 42, No. 4 A, p. 1548-1551, 2003/04
  • Interface structures of OMVPE-grown GaAs/GaInP/GaAs studied by X-ray CTR scattering measurement, M. Tabuchi,S. Hisadome,D. Katou,T. Yoshikane,A. Urakami,K. Inoue,A. Koizumi,Y. Fujiwara,Y. Takeda, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IEEE, p. 534-537, 2003
  • Effects of active layer thickness on Er excitation cross section in GaInP/GaAs:Er,O /GaInP DH structure light-emitting diodes, A. Koizumi,Y. Fujiwara,A. Urakami,K. Inoue,T. Yoshikane,Y. Takeda, Physica B, Vol. 340-342, p. 309-314, 2003
  • Femtosecond laser spectroscopy of In<inf>0.53</inf>Ga<inf>0.47</inf>As/InP multiple quantum wells: Interfacial roughness and photoexcited carrier relaxation, A. Nakamura,K. Tanase,I. Yamakawa,T. Yamauchi,Y. Hamanaka,R. Oga,Y. Fujiwara,Y. Takeda, Journal of Luminescence, ELSEVIER SCIENCE BV, Vol. 100, No. 1-4, p. 259-267, 2002/12
  • Cathodoluminescence study of selective epitaxial growth of In<inf>x</inf>Ga<inf>1-x</inf>As (x ∼ 0.53) thin quantum wells on InP pyramid structures on a masked substrate, Ichirou Yamakawa,Ryo Oga,Yoichi Nonogaki,Yasufumi Fujiwara,Yoshikazu Takeda,Arao Nakamura, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 241, No. 1-2, p. 85-92, 2002/05
  • Improved size control of InP nanopyramids by selective-area flow rate modulation epitaxy, R. Oga,S. Yamamoto,I. Ohzawa,Y. Fujiwara,Y. Takeda, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 237-239, No. 1-4 I, p. 239-243, 2002/04
  • Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy, A. Koizumi,H. Moriya,N. Watanabe,Y. Nonogaki,Y. Fujiwara,Y. Takeda, Applied Physics Letters, AMER INST PHYSICS, Vol. 80, No. 9, p. 1559-1561, 2002/03/04
  • Droplet hetero-epitaxy of InAs quantum structures on InP nanopyramids formed by selective-area flow rate modulation epitaxy, Ryo Oga,Syunsuke Yamamoto,Itsuya Ohzawa,Yasufumi Fujiwara,Yoshikazu Takeda, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, JAPAN SOC APPLIED PHYSICS, Vol. 41, No. 2 B, p. 1026-1029, 2002/02
  • Fabrication and room-temperature electroluminescence of InAs quantum dots grown on InGaAsP/InP by droplet hetero-epitaxy, Lee W. S.,Oga R.,Fujiwara Y.,Takeda Y., Journal of the Japanese Association for Crystal Growth, The Japanese Association for Crystal Growth, Vol. 29, No. 2, p. 38-38, 2002
  • 1.54-μm spontaneous and stimulated emission of Er-2O centers in GaAs: Experiments and modeling, P. Eliseev,S. Gastev,A. Koizumi,Y. Fujiwara,Y. Takeda, Proceedings of SPIE-The International Society for Optical Engineering, SPIE-INT SOC OPTICAL ENGINEERING, Vol. 4645, p. 35-42, 2002
  • ESR study of heavily doped GaAs : Er grown by organometallic vapor phase epitaxy, J Yoshikawa,S Okubo,H Ohta,T Koide,T Kawamoto,Y Fujiwara,Y Takeda, EPR IN THE 21ST CENTURY: BASICS AND APPLICATIONS TO MATERIAL, LIFE AND EARTH SCIENCES, ELSEVIER SCIENCE BV, p. 302-305, 2002
  • Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy, Yasufumi Fujiwara,Atsushi Koizumi,Kentaro Inoue,Akira Urakami,Taketoshi Yoshikane,Yoshikazu Takeda, Materials Research Society Symposium - Proceedings, MATERIALS RESEARCH SOC, Vol. 744, p. 149-154, 2002
  • Luminescence properties of Dy-doped GaAs grown by organometallic vapor phase epitaxy, Y. Fujiwara,T. Koide,S. Jinno,Y. Isogai,Y. Takeda, Physica B: Condensed Matter, ELSEVIER SCIENCE BV, Vol. 308-310, p. 796-799, 2001/12
  • Luminescence properties of Er,O-codoped GaAs/GaInP double heterostructures grown by organometallic vapor phase epitaxy, A. Koizumi,N. Watanabe,K. Inoue,Y. Fujiwara,Y. Takeda, Physica B: Condensed Matter, ELSEVIER SCIENCE BV, Vol. 308-310, p. 891-894, 2001/12
  • Stimulated emission from GaAs : Er, O at 1538 nm, P. G. Eliseev,S. V. Gastev,A. Koizumi,Y. Fujiwara,Y. Takeda, Quantum Electronics, TURPION LTD, Vol. 31, No. 11, p. 962-964, 2001/11
  • OMVPE growth and properties of Dy-doped III-V semiconductors, T. Koide,Y. Isogai,Y. Fujiwara,Y. Takeda, Physica E: Low-Dimensional Systems and Nanostructures, ELSEVIER SCIENCE BV, Vol. 10, No. 1-3, p. 406-410, 2001/05
  • Codoping effect of O<inf>2</inf> into Er-doped InP epitaxial layers grown by OMVPE, H. Ohta,C. Urakawa,Y. Nakashima,J. Yoshikawa,T. Koide,T. Kawamoto,Y. Fujiwara,Y. Takeda, Physica E: Low-Dimensional Systems and Nanostructures, ELSEVIER SCIENCE BV, Vol. 10, No. 1-3, p. 399-402, 2001/05
  • ESR study of GaAs:Er codoped with oxygen grown by organometallic vapor phase epitaxy, J. Yoshikawa,C. Urakawa,H. Ohta,T. Koide,T. Kawamoto,Y. Fujiwara,Y. Takeda, Physica E: Low-Dimensional Systems and Nanostructures, ELSEVIER SCIENCE BV, Vol. 10, No. 1-3, p. 395-398, 2001/05
  • Magnetic properties of Er and Er, O-doped GaAs grown by organometallic vapor phase epitaxy, Y. Morinaga,T. Edahiro,N. Fujimura,T. Ito,T. Koide,Y. Fujiwara,Y. Takeda, Physica E: Low-Dimensional Systems and Nanostructures, ELSEVIER SCIENCE BV, Vol. 10, No. 1-3, p. 391-394, 2001/05
  • Luminescence properties of Er,O-codoped GaP grown by organometallic vapor phase epitaxy, Yasufumi Fujiwara,Tatsuhiko Koide,Yoshikazu Takeda, Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ELSEVIER SCIENCE SA, Vol. 81, No. 1-3, p. 153-156, 2001/04
  • Luminescence properties of Er,O-codoped InGaAs/GaAs MQW structures grown by OMVPE, A Koizumi,H Moriya,N Watanabe,Y Nonogaki,Y Fujiwara,Y Takeda, PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, SPRINGER-VERLAG BERLIN, Vol. 87, p. 1389-1390, 2001
  • Growth mode transition of InGaAs in OMVPE growth on GaP (001), H. Moriya,Y. Nonogaki,S. Fuchi,A. Koizumi,Y. Fujiwara,Y. Takeda, Microelectronic Engineering, ELSEVIER SCIENCE BV, Vol. 51, p. 35-42, 2000/05
  • Self-assembled InGaAs dots grown on GaP (0 0 1) substrate by low-pressure organometallic vapor phase epitaxy, S. Fuchi,Y. Nonogaki,H. Moriya,A. Koizumi,Y. Fujiwara,Y. Takeda, Physica E: Low-Dimensional Systems and Nanostructures, ELSEVIER SCIENCE BV, Vol. 7, No. 3, p. 855-859, 2000/05
  • SR-stimulated etching and OMVPE growth for semiconductor nanostructure fabrication, Y. Nonogaki,H. Hatate,R. Oga,S. Yamamoto,Y. Fujiwara,Y. Takeda,H. Noda,T. Urisu, Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ELSEVIER SCIENCE SA, Vol. 74, No. 1, p. 7-11, 2000/05/01
  • Er-related luminescence from self-assembled InAs quantum dots doped with Er by organometallic vapor-phase epitaxy, Y. Fujiwara,T. Kawamoto,S. Fuchi,M. Ichida,Y. Nonogaki,A. Nakamura,Y. Takeda, Journal of Luminescence, ELSEVIER SCIENCE BV, Vol. 87, p. 326-329, 2000/05
  • EPR measurement on Er-doped InP grown by organometallic vapor phase epitaxy, C. Urakawa,Y. Nakashima,H. Ohta,T. Ito,Y. Fujiwara,Y. Takeda, Applied Magnetic Resonance, SPRINGER WIEN, Vol. 19, No. 1, p. 3-7, 2000
  • Effects of GaP cap layer growth on self-assembled inas islands grown on GaP (001) by organometallic vapor phase epitaxy, Shingo Fuchi,Youichi Nonogaki,Hiromitsu Moriya,Yasufumi Fujiwara,Yoshikazu Takeda, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, JAPAN SOC APPLIED PHYSICS, Vol. 39, No. 6 A, p. 3290-3293, 2000
  • Luminescence properties of Er,O-codoped III-V semiconductors grown by organometallic vapor phase epitaxy, Y. Fujiwara,T. Kawamoto,T. Koide,Y. Takeda, Physica B: Condensed Matter, ELSEVIER SCIENCE BV, Vol. 273-274, p. 770-773, 1999/12/15
  • Relaxation of optically excited 4f electrons in Er-doped Ga<inf>x</inf>In<inf>1-x</inf>P, Y. Fujiwara,T. Ito,M. Ichida,T. Kawamoto,O. Watanabe,I. Yamakawa,A. Nakamura,Y. Takeda, Physica B: Condensed Matter, ELSEVIER SCIENCE BV, Vol. 272, No. 1-4, p. 428-430, 1999/12/01
  • Femtosecond relaxation dynamics of hot carriers in photoexcited In<inf>0.53</inf>Ga<inf>0.47</inf>As, Y. Hamanaka,D. Nishiwaki,Y. Nonogaki,Y. Fujiwara,Y. Takeda,A. Nakamura, Physica B: Condensed Matter, ELSEVIER SCIENCE BV, Vol. 272, No. 1-4, p. 391-393, 1999/12/01
  • ”Formation of InGaAs dots on InP substrate with lattice-matching growth condition by droplet heteroepitaxy”, Y. Nonogaki,T. Iguchi,S. Fuchi,R. Oga,H. Moriya,Y. Fujiwara,Y. Takeda, 『Institute of Physics Conference Series』（IOP Publishing）, 1999/06
  • Semimetal to semiconductor transition in ErP islands grown on InP(001) due to quantum-size effects, L Bolotov,T Tsuchiya,A Nakamura,T Ito,Y Fujiwara,Y Takeda, PHYSICAL REVIEW B, AMER PHYSICAL SOC, Vol. 59, No. 19, p. 12236-12239, 1999/05
  • Effects of vicinal InP (001) surface on in As dots grown by droplet hetero-epitaxy, Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda, Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ELSEVIER SCIENCE SA, Vol. 58, No. 3, p. 195-198, 1999/03/29
  • Formation of InGaAs dots on InP substrate with lattice-matching growth condition by droplet heteroepitaxy, Y Nonogaki,T Iguchi,S Fuchi,R Oga,H Moriya,Y Fujiwara,Y Takeda, COMPOUND SEMICONDUCTORS 1998, IOP PUBLISHING LTD, No. 162, p. 469-473, 1999
  • High thermal-stability of Er-related luminescence and atom configurations around Er atoms doped in InP by OMVPE growth, Y Fujiwara,T Ito,H Ofuchi,T Kawamoto,M Tabuchi,Y Takeda, COMPOUND SEMICONDUCTORS 1998, IOP PUBLISHING LTD, No. 162, p. 173-176, 1999
  • Hot carrier relaxation dynamics in In<inf>0.53</inf>Ga<inf>0.47</inf>As studied by femtosecond pump-probe spectroscopy, D. Nishiwaki,Y. Hamanaka,Y. Nonogaki,Y. Fujiwara,Y. Takeda,A. Nakamura, Journal of Luminescence, ELSEVIER SCIENCE BV, Vol. 83-84, p. 49-53, 1999
  • Thermal stability of atom configurations around Er atoms doped in InP by OMVPE, H Ofuchi,T Ito,T Kawamoto,M Tabuchi,Y Fujiwara,Y Takeda, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, JAPAN SOC APPLIED PHYSICS, Vol. 38, No. 38-1, p. 542-544, 1999
  • "Semimetal to Semiconductor Transition in ErP Islands Grown on InP(001)due to Quantum Size Effects", Physical Review B, Vol. 59, No. 19, p. 12236-12239, 1999
  • Optically detected far-infrared magnetoabsorption in InGaAs, Hiroyasu Nakata,Nobuhiro Shimizu,Tyuzi Ohyama,Youichi Nonogaki,Yasufumi Fujiwara,Yoshikazu Takeda, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, JAPAN SOC APPLIED PHYSICS, Vol. 38, No. 4 A, p. 1868-1871, 1999
  • Thermal quenching of Er-related luminescence in GaInP doped with Er by organometallic vapor phase epitaxy, Yasufumi Fujiwara,Takashi Ito,Masao Ichida,Takeshi Kawamoto,Osamu Watanabe,Ichiro Yamakawa,Arao Nakamura,Yoshikazu Takeda, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, JAPAN SOC APPLIED PHYSICS, Vol. 38, No. 2 B, p. 1008-1011, 1999
  • Intense 1.5 μm emission from InAs quantum dots on exact and vicinal (001) InP surface grown by droplet hetero-epitaxy using OMVPE, Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda, Materials Science and Engineering B, ELSEVIER SCIENCE SA, Vol. 57, No. 1, p. 84-86, 1998/12/04
  • Photoreflectance study of InP/InGaAs(1-5 ML)/InP single quantum well, Jiti Nukeaw,Rikiya Asaoka,Yasufumi Fujiwara,Yoshikazu Takeda, Thin Solid Films, ELSEVIER SCIENCE SA, Vol. 334, No. 1-2, p. 44-48, 1998/12/04
  • Observation of high electric field at ZnSe/GaAs heterointerfaces by fast Fourier transformed photoreflectance, Jiti Nukeaw,Yasufumi Fujiwara,Yoshikazu Takeda,Mitsuru Funato,Satoshi Aoki,Shizuo Fujita,Shigeo Fujita, Thin Solid Films, ELSEVIER SCIENCE SA, Vol. 334, No. 1-2, p. 11-14, 1998/12/04
  • Local structures around Er atoms doped in InP revealed by fluorescence EXAFS, H. Ofuchi,D. Kawamura,N. Matsubara,M. Tabuchi,Y. Fujiwara,Y. Takeda, Microelectronic Engineering, ELSEVIER SCIENCE BV, Vol. 43-44, p. 745-751, 1998/08/01
  • Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy, Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda, Applied Surface Science, Vol. 130-132, p. 724-728, 1998/06
  • Thermal diffusion of Er atoms δ-doped in InP, M. Tabuchi,K. Fujita,J. Tsuchiya,Y. Fujiwara,Y. Takeda, Applied Surface Science, ELSEVIER SCIENCE BV, Vol. 130-132, p. 393-397, 1998/06
  • Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy, Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda, Applied Surface Science, Elsevier BV, Vol. 130-132, p. 724-728, 1998/06
  • Dynamical properties of excitons interacting with electrons heated by far-infrared cyclotron resonance in InGaAs, H. Nakata,N. Shimizu,T. Ohyama,Y. Nonogaki,Y. Fujiwara,Y. Takeda, Physica B: Condensed Matter, ELSEVIER SCIENCE BV, Vol. 246-247, p. 204-207, 1998/05/29
  • Local structure study of dilute Er in III-V semiconductors by fluorescence EXAFS, H. Ofuchi,D. Kawamura,J. Tsuchiya,N. Matsubara,M. Tabuchi,Y. Fujiwara,Y. Takeda, Journal of Synchrotron Radiation, Vol. 5, No. 3, p. 1061-1063, 1998/05/01
  • Local structure study of dilute Er in III-V semiconductors by fluorescence EXAFS, H Ofuchi,D Kawamura,J Tsuchiya,N Matsubara,M Tabuchi,Y Fujiwara,Y Takeda, JOURNAL OF SYNCHROTRON RADIATION, INT UNION CRYSTALLOGRAPHY, Vol. 5, p. 1061-1063, 1998/05
  • Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy, Yasufumi Fujiwara,Anthony P. Curtis,Gregory E. Stillman,Naoteru Matsubara,Yoshikazu Takeda, Journal of Applied Physics, AMER INST PHYSICS, Vol. 83, No. 9, p. 4902-4908, 1998/05/01
  • InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE, Y. Nonogaki,T. Iguchi,S. Fuchi,Y. Fujiwara,Y. Takeda, Materials Science and Engineering B, ELSEVIER SCIENCE SA, Vol. 51, No. 1-3, p. 118-121, 1998/02/27
  • Fabrication of InP submicron pillars for two-dimensional photonic crystals by reactive ion etching, Hitoshi Hatate,Masayuki Hashimoto,Hirofumi Shirakawa,Yasufumi Fujiwara,Yoshikazu Takeda,Hirohiko Nakano,Toshiaki Tatsuta,Osamu Tsuji, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 12 B, p. 7172-7176, 1998
  • Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP, Y Fujiwara,T Ito,H Ofuchi,J Tsuchiya,A Tanigawa,M Tabuchi,Y Takeda, COMPOUND SEMICONDUCTORS 1997, IOP PUBLISHING LTD, Vol. 156, p. 199-202, 1998
  • "Effects of Post Annealing on Self-Organized InAs Islands on(100)GaP by Organometallic Vapor Phase Epitaxy", Journal of Surface Analysis, Vol. 4, No. 2, p. 259-263, 1998
  • Fabrication of two-dimensional InP photonic band-gap crystals by reactive ion etching with inductively coupled plasma, Yasufumi Fujiwara,Koji Kikuchi,Masayuki Hashimoto,Hitoshi Hatate,Toshiaki Imai,Yoshikazu Takeda,Hirohiko Nakano,Masahiro Honda,Toshiaki Tatsuta,Osamu Tsuji, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, JAPAN SOC APPLIED PHYSICS, Vol. 36, No. 12 SUPPL. B, p. 7763-7768, 1997/12
  • Formation of ErP islands on InP(001) surface by organometallic vapor phase epitaxy, Leonid Bolotov,Junji Tsuchiya,Yasufumi Fujiwara,Yoshikazu Takeda,Arao Nakamura, Japanese Journal of Applied Physics, Part 2: Letters, JAPAN SOC APPLIED PHYSICS, Vol. 36, No. 11 SUPPL. B, p. L1534-L1537, 1997/11/15
  • Observation of electric fields at surface and interface of doped GaAs/semi-insulating GaAs structures by fast fourier transformed photoreflectance, Jiti Nukeaw,Yasufumi Fujiwara,Yoshikazu Takeda, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, JAPAN SOC APPLIED PHYSICS, Vol. 36, No. 11, p. 7019-7023, 1997/11
  • Structural analysis of Erbium δ-doped InP(001) crystal by means of RBS channeling, J. Yuhara,H. Takeda,N. Matsubara,M. Tabuchi,Y. Fujiwara,K. Morita,Y. Takeda, Radiation Physics and Chemistry, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 50, No. 3, p. 193-197, 1997/09
  • Layer structure analysis of Er δ-doped InP by x-ray crystal truncation rod scattering, Yoshikazu Takeda,Keiji Fujita,Naoteru Matsubara,Naoki Yamada,Satofumi Ichiki,Masao Tabuchi,Yasufumi Fujiwara, Journal of Applied Physics, AMER INST PHYSICS, Vol. 82, No. 2, p. 635-638, 1997/07/15
  • Occupation site and distribution of δ-doped Er in InP measured by X-ray CTR scattering, K. Fujita,J. Tsuchiya,S. Ichiki,H. Hamamatsu,N. Matsumoto,M. Tabuchi,Y. Fujiwara,Y. Takeda, Applied Surface Science, ELSEVIER SCIENCE BV, Vol. 117-118, p. 785-789, 1997/06/02
  • Atom configuration study of δ-doped Er in InP by fluorescence EXAFS, H. Ofuchi,J. Tsuchiya,N. Matsubara,M. Tabuchi,Y. Fujiwara,Y. Takeda, Applied Surface Science, ELSEVIER SCIENCE BV, Vol. 117-118, p. 781-784, 1997/06/02
  • Characterization of InP δ-doped with Er by FFT photoreflectance, Jiti Nukeaw,Naoteru Matsubara,Yasufumi Fujiwara,Yoshikazu Takeda, Applied Surface Science, ELSEVIER SCIENCE BV, Vol. 117-118, p. 776-780, 1997/06/02
  • Formation of InAs islands on InP (001) by droplet hetero-epitaxy, Y. Nonogaki,T. Iguchi,Y. Fujiwara,Y. Takeda, Applied Surface Science, ELSEVIER SCIENCE BV, Vol. 117-118, p. 665-669, 1997/06/02
  • Effects of growth temperature on Er-related photoluminescence in Er-doped InP and GaAs grown by organometallic vapor phase epitaxy with tertiarybutylphosphine and tertiarybutylarsine, Yasufumi Fujiwara,Naoteru Matsubara,Junji Tsuchiya,Takashi Ito,Yoshikazu Takeda, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, JAPAN J APPLIED PHYSICS, Vol. 36, No. 5 A, p. 2587-2591, 1997/05
  • Observation of trap states in Er-doped InP by photoreflectance, Jiti Nukeaw,Jun Yanagisawa,Naoteru Matsubara,Yasufumi Fujiwara,Yoshikazu Takeda, Applied Physics Letters, AMER INST PHYSICS, Vol. 70, No. 1, p. 84-86, 1997/01/06
  • Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP, Y. Fujiwara,T. Ito,H. Ofuchi,J. Tsuchiya,A. Tanigawa,M. Tabuchi,Y. Takeda, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, IEEE, p. 199-202, 1997
  • "Formation of ErP Islands on The Er-doped InP(001)by MOVPE", Japanese Journal of Applied Physics, Vol. 36, No. 11B, 1997
  • Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBP, Hiroyasu Nakata,Kazuo Satoh,Tyuzi Ohyama,Yasufumi Fujiwara,Youichi Nonogaki,Yoshikazu Takeda, Journal of Electronic Materials, MINERALS METALS MATERIALS SOC, Vol. 25, No. 5, p. 611-617, 1996/04
  • EXAFS and X-ray CTR scattering characterization of Er doped in InP by OMVPE, M. Tabuchi,D. Kawamura,K. Fujita,N. Matsubara,N. Yamada,H. Ofuchi,S. Ichiki,Y. Fujiwara,Y. Takeda, Materials Research Society Symposium - Proceedings, MATERIALS RESEARCH SOC, Vol. 422, p. 155-160, 1996
  • Erbium delta-doping to InP by OMVPE, Y Fujiwara,N Matsubara,J Yuhara,M Tabuchi,K Fujita,N Yamada,Y Nonogaki,Y Takeda,K Morita, COMPOUND SEMICONDUCTORS 1995, IOP PUBLISHING LTD, Vol. 145, p. 149-154, 1996
  • Erbium doping to P-based III-V semiconductors by OMVPE with TBP as a non-toxic P source, Y. Fujiwara,Y. Ito,Y. Nonogaki,N. Matsubara,K. Fujita,Y. Takeda, Materials Science Forum, TRANSTEC PUBLICATIONS LTD, Vol. 196-201, No. pt 2, p. 621-626, 1995
  • Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical properties of InP grown by organometallic vapour phase epitaxy with TMIn and TBP, Y. Fujiwara,S. Furuta,K. Makita,Y. Ito,Y. Nonogaki,Y. Takeda, Journal of Crystal Growth, ELSEVIER SCIENCE BV, Vol. 146, No. 1-4, p. 544-548, 1995/01/01
  • VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON, H NISHITANI,H NAKATA,T OHYAMA,Y FUJIWARA, SHALLOW IMPURITIES IN SEMICONDUCTORS, TRANS TECH PUBLICATIONS LTD, Vol. 117, p. 513-518, 1993
  • Structured photoluminescence spectrum in laterally anodized porous silicon, Yasufumi Fujiwara,Hikaru Nishitani,Hiroyasu Nakata,Tyuzi Ohyama, Japanese Journal of Applied Physics, JAPAN SOC APPLIED PHYSICS, Vol. 31, No. 12, p. L1763-L1766, 1992/12
  • Light-induced degradation and recovery of visible photoluminescence in porous silicon, Hikaru Nishitani,Hiroyasu Nakata,Yasufumi Fujiwara,Tyuzi Ohyama, Japanese Journal of Applied Physics, JAPAN SOC APPLIED PHYSICS, Vol. 31, No. 11, p. L1577-L1579, 1992/11
  • Diagnosis of surface stability of 80k-phase bisrcacuo single crystals with and without li doping, Satoshi Hirata,Ken Sakuta,Yasufumi Fujiwara,Takeshi Kobayashi, Japanese Journal of Applied Physics, JAPAN J APPLIED PHYSICS, Vol. 30, No. 9, p. 1975-1976, 1991/09
  • Effects of oxygen addition on diamond film growth by electron-cyclotron-resonance microwave plasma cvd apparatus, Masayuki Nunotani,Masaaki Komori,Masahiro Yamasawa,Yasufumi Fujiwara,Ken Sakuta,Takeshi Kobayashi,Shinichi Nakashima,Shoichiro Minomo,Michio Taniguchi,Masato Sugiyo, Japanese Journal of Applied Physics, JAPAN SOC APPLIED PHYSICS, Vol. 30, No. 7, p. L1199-L1202, 1991/07
  • Local Atomic Configuration And Auger Valence Electron Spectra In Bisrcacu Single Crystals, Y. Fujiwara,S. Hirata,M. Nishikubo,T. Kobayashi, IEEE Transactions on Magnetics, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, Vol. 27, No. 2, p. 1166-1169, 1991/03
  • Improved Siiperconductivity In Bisrcacuo Single Crystals By Lithium Doping, Y. Fujiwara,S. Hirata,M. Nishikubo,T. Kobayashi, IEEE Transactions on Magnetics, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, Vol. 27, No. 2, p. 1150-1153, 1991/03
  • Growth and characterization of new Bi<inf>14</inf>(Sr <inf>0.33</inf>Ca<inf>0.67</inf>)<inf>5</inf>O<inf>26</inf> single crystals, Yasufumi Fujiwara,Satoshi Hirata,Takeshi Kobayashi,Eungi Min,Kyouichi Shibuya, Journal of Applied Physics, Vol. 69, No. 8, p. 4373-4378, 1991
  • Cathodeluminescence from MgO substrates with YBaCuO superconducting epitaxial thin films, Yasufumi Fujiwara,Satoshi Hirata,Masahiro Iyori,Takeshi Kobayashi, Solid State Communications, PERGAMON-ELSEVIER SCIENCE LTD, Vol. 74, No. 7, p. 641-644, 1990/05
  • Catastrophic local degradation of YBa<inf>2</inf>Cu<inf>3</inf>O<inf>y</inf> epitaxial film induced by high electric field application, Uki Kabasawa,Katsunori Asano,Masahiro Iyori,Satoshi Hirata,Ken Sakuta,Yasufumi Fujiwara,Takeshi Kobayashi, Japanese Journal of Applied Physics, JAPAN J APPLIED PHYSICS, Vol. 29, No. 3, p. L453-L455, 1990/03
  • Characterization of high tc superconductor by luminescence methods, Yasufumi Fujiwara,Takehi Kobayashi, IEEE Transactions on Magnetics, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, Vol. 25, No. 2, p. 2563-2566, 1989/03
  • 高温超伝導体のルミネッセンス評価, 藤原康文,小林猛, 応用物理, Vol. 58, No. 1, p. 52-58, 1989
  • Thermally stimulated luminescence from high-T<inf>c</inf> superconducting Tl-Ba-Ca-Cu-O System, Yasufumi Fujiwara,Masayoshi Tonouchi,Takeshi Kobayashi, Japanese Journal of Applied Physics, JAPAN SOC APPLIED PHYSICS, Vol. 27, No. 9 A, p. L1706-L1708, 1988/09
  • OXYGEN STOICHIOMETRY IN SUPERONDUCTIVE CERAMIC Er//1 Ba//2Cu//3O////y+ZZ, Tetsuro Takahashi,Masayoshi Tonouchi,Yasufumi Fujiwara,Takeshi Kobayashi, J Ceram Soc Jpn, Vol. 96, No. 4, p. 489-490, 1988
  • High tc superconductivity of rf-sputtered er-ba-cu-o films, Masayoshi Tonouchi,Yuji Yoshizako,Tetsuro Takahashi,Yoshiyuki Sakaguchi,Sadamu Kita,Yasufumi Fujiwara,Takeshi Kobayashi, Japanese Journal of Applied Physics, JAPAN SOC APPLIED PHYSICS, Vol. 26, No. 9A, p. 1462-1464, 1987/09
  • Oxygen deficiency in er1ba2cu3oy superconductive ceramics, Takeshi Kobayashi,Tetsuro Takahashi,Masayoshi Tonouchi,Yasufumi Fujiwara,Sadamu Kita, Japanese Journal of Applied Physics, Vol. 26, No. 8A, p. L1381-L1383, 1987/08
  • Frequency dependence of ac josephson effect in point-contact (Y, Er) BaCuO/Nb, Sadamu Kita,Hisao Tanabe,Tetsuro Takahashi,Masayoshi Tonouchi,Yasufumi Fujiwara,Takeshi Kobayashi, Japanese Journal of Applied Physics, JAPAN SOC APPLIED PHYSICS, Vol. 26, No. 8A, p. L1353-L1355, 1987/08
  • HIGH-SENSITIVE CHARACTERIZATION METHOD OF INTERFACE STRESS AT HETEROSTRUCTURE BY CR-RELATED LUMINESCENCE, T NISHINO,S SHIRAKATA,Y FUJIWARA,Y HAMAKAWA, JOURNAL OF ELECTRONIC MATERIALS, MINERALS METALS MATERIALS SOC, Vol. 16, No. 4, p. A3-A3, 1987/07
  • Hall coefficient of La-Sr-Cu oxide superconducting compound, Masayoshi Tonouchi,Yasufumi Fujiwara,Sadamu Kita,Takeshi Kobayashi,Masasuke Takata,Tsutomu Yamashita, Japanese Journal of Applied Physics, JAPAN J APPLIED PHYSICS, Vol. 26, No. 4 A, p. L519-L520, 1987/04
  • 常温超伝導をめぐる動き, 小林猛,藤原康文, 化学と工業, Vol. 40, No. 12, p. 1025-1027, 1987
  • Radiant er-related luminescence of high tc superconducting er–ba–cu–o system, Yasufumi Fujiwara,Tetsuro Takahashi,Yoshito Fukumoto,Masayoshi Tonouchi,Takeshi Kobayashi, Japanese Journal of Applied Physics, JAPAN J APPLIED PHYSICS, Vol. 26, No. S3-3, p. 2123-2124, 1987/01
  • Observation of a New Chromium-Related Complex in GaAs:Cr, Yasufumi Fujiwara,Yasushi Kita,Yoshiyuki Tonami,Taneo Nishino,Yoshihiro Hamakawa, Journal of the Physical Society of Japan, PHYSICAL SOCIETY JAPAN, Vol. 55, No. 11, p. 3741-3744, 1986/11
  • Interface stress at znse/gaas:Cr heterostructure, Yasufumi Fujiwara,Sho Shirakata,Taneo Nishino,Yoshihiro Hamakawa,Shigeo Fujita, Japanese Journal of Applied Physics, JAPAN J APPLIED PHYSICS, Vol. 25, No. 11, p. 1628-1632, 1986/11
  • Characterization of interface stress at InGaPAs/GaAs by cr-related luminescence line in GaAs, S. Shirakata,Y. Fujiwara,M. Kondo,T. Nishino,Y. Hamakawa, Journal of Electronic Materials, MINERALS METALS MATERIALS SOC, Vol. 15, No. 6, p. 323-329, 1986/11
  • Measurements of residual stress in semi-insulating GaAs by Cr-related luminescence lines, Y. Fujiwara,T. Nishino,Y. Hamakawa, Applied Physics A Solids and Surfaces, Vol. 41, No. 2, p. 115-122, 1986/10
  • MEASUREMENTS OF RESIDUAL-STRESS IN SEMIINSULATING GAAS BY CR-RELATED LUMINESCENCE LINES, Y FUJIWARA,T NISHINO,Y HAMAKAWA, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, SPRINGER VERLAG, Vol. 41, No. 2, p. 115-122, 1986/10
  • Effects of in doping on cr-related luminescence in gaas, Yasufumi Fujiwara,Yasushi Kita,Yoshiyuki Tonami,Taneo Nishino,Yoshihiro Hamakawa, Japanese Journal of Applied Physics, JAPAN J APPLIED PHYSICS, Vol. 25, No. 3 A, p. L232-L234, 1986/03
  • New Cr-related luminescence lines in In-doped GaAs, Proceedings of the 18th International Conference on Physics of Semiconductors (ICPS-18, Stockholm, Sweden, August 11-15, 1986), edited by O. Engstrom (World Scientific Publishing Co. Pte. Ltd., Singapore, 1987) pp. 959-962., 1986
  • Observation of local lattice distortion induced by in doping in GaAs, Y. Fujiwara,Y. Kita,Y. Tonami,T. Nishino,Y. Hamakawa, Applied Physics Letters, AMER INST PHYSICS, Vol. 49, No. 3, p. 161-163, 1986
  • フォトルミネッセンス法によるGaAs中の遷移金属の評価, 藤原康文,西野種夫,濱川圭弘, 応用物理, Vol. 54, No. 11, p. 1202-1207, 1985/11
  • In-depth profile measurements of cr-related luminescence lines in gaas, Yasufumi Fujiwara,Atsushi Kojima,Taneo Nishino,Yoshihiro Hamakawa, Japanese Journal of Applied Physics, JAPAN J APPLIED PHYSICS, Vol. 24, No. 11 R, p. 1479-1483, 1985/11
  • PL法によるSI-GaAs基板の残留応力評価 【招待講演】, 日本学術振興会第145委員会第27研究会資料 (1985) pp. 72-77., 1985
  • 0.839 eV Cr-related luminescence center in GaAs:Cr, Y. Fujiwara,A. Kojima,T. Nishino,Y. Hamakawa, Journal of Luminescence, ELSEVIER SCIENCE BV, Vol. 31-32, No. PART 1, p. 451-453, 1984/12
  • CHARACTERIZATION OF DEEP IMPURITIES IN GAAS BY PHOTOLUMINESCENCE, T NISHINO,Y FUJIWARA,A KOJIMA,Y HAMAKAWA, PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, Vol. 452, p. 2-8, 1984
  • Deep-level luminescence of cr-doped gaasp alloys, Yasufumi Fujiwara,Atsushi Kojima,Taneo Nishino,Yoshihiro Hamakawa, Japanese Journal of Applied Physics, JAPAN J APPLIED PHYSICS, Vol. 23, No. 1, p. 4-6, 1984/01
  • PHOTOLUMINESCENCE AND LATTICE MISMATCH IN InGaAs/InP., Tetsuya Yagi,Yasufumi Fujiwara,Taneo Nishino,Yoshihiro Hamakawa, Japanese Journal of Applied Physics, Part 2: Letters, JAPAN J APPLIED PHYSICS, Vol. 22, No. 7, p. 467-469, 1983/07
  • DEEP-LEVEL LUMINESCENCE IN Ni-DIFFUSED GaAs., Yasufumi Fujiwara,Atsushi Kojima,Taneo Nishino,Yoshihiro Hamakawa, Japanese Journal of Applied Physics, Part 2: Letters, JAPAN J APPLIED PHYSICS, Vol. 22, No. 7, p. L476-L478, 1983/07
  • DEEP ACCEPTOR PHOTO-LUMINESCENCE IN GAAS, T NISHINO,Y FUJIWARA,Y HAMAKAWA, INSTITUTE OF PHYSICS CONFERENCE SERIES, EDITIONS SCIENTIFIQUES MEDICALES ELSEVIER, No. 65, p. 71-78, 1983
  • Cr-related luminescence in GaAs:Cr, Y. Fujiwara,T. Nishino,Y. Hamakawa, Japanese Journal of Applied Physics, JAPAN J APPLIED PHYSICS, Vol. 21, No. 11, p. L727-L729, 1982/11
  • PHOTO-LUMINESCENCE STUDIES OF ACCEPTOR IMPURITIES IN INGAASP, T NISHINO,Y YAMAZOE,K OHTSUKA,Y FUJIWARA,Y HAMAKAWA, INSTITUTE OF PHYSICS CONFERENCE SERIES, PLENUM PUBL CORP, No. 63, p. 149-154, 1982

Misc.

  • Nanoscale ErP islands on InP(001) substrate grown by organometallic vapor-phase epitaxy, Leonid Bolotov,Takahiro Tsuchiya,Takashi Ito,Yasufumi Fujiwara,Yoshikazu Takeda,Arao Nakamura, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, JAPAN J APPLIED PHYSICS, Vol. 38, No. 2 B, p. 1060-1063, 1999
  • Spin transport in GaN using ferromagnetic Heusler alloy/n<sup>+</sup>-GaN Schottky tunnel contacts, 加藤昌稔,山田晋也,山田晋也,市川修平,小林周平,山田道洋,山田道洋,内藤貴大,舘林潤,藤原康文,藤原康文,浜屋宏平,浜屋宏平, 応用物理学会春季学術講演会講演予稿集(CD-ROM), Vol. 69th, 2022
  • GaN(0001)上へのハーフメタルホイスラー合金Co<sub>2</sub>FeSi薄膜の低温MBE成長, 山田晋也,山田晋也,本多遼成,後藤優貴,市川修平,舘林潤,藤原康文,藤原康文,浜屋宏平,浜屋宏平, 応用物理学会秋季学術講演会講演予稿集(CD-ROM), Vol. 80th, 2019
  • Realization of red resonant cavity LEDs with an Eu-doped GaN active layer, Vol. 117, No. 332, p. 45-48, 2017/11/30
  • Direct electrode patterning on layered GaN on sapphire substrate by using needle-type dispenser system of Ag nanoinks, Y. Kashiwagi,M. Saitoh,T. Hasegawa,K. Matsukawa,T. Shigemune,A. Koizumi,T. Kojima,Y. Fujiwara,H. Kakiuchi,N. Aoyagi,Y. Yoshida,M. Nakamoto, 2016 International Conference on Electronics Packaging, ICEP 2016, p. 129-132, 2016/06/07
  • Electrical and Optical Properties of InGaN/GaN Blue Light Emitting Diodes with Printed Ag Electrodes Using Nanoink, Vol. 25, p. 197-200, 2015/09/03
  • Formation of the Electrode in GaN-based Light Emitting Diode using the Direct Printing of Nanoinks, Vol. 24, p. 135-138, 2014/09/04
  • GaN:Eu結晶薄膜におけるEu<sup>3+</sup>発光に対する励起子解離効果, 中村聡志,竹内日出雄,小泉淳,藤原康文,中山正昭, 日本物理学会講演概要集, Vol. 69, No. 2, 2014
  • OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures, ARAI Takanori,WAKAMATSU Ryuta,LEE Dong-gun,KOIZUMI Atsushi,FUJIWARA Yasufumi, IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 113, No. 329, p. 63-66, 2013/11/28
  • Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy, Kuwata Souichirou,Koizumi Atsushi,Fujiwara Yasufumi, IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 113, No. 329, p. 67-70, 2013/11/28
  • 25pDD-8 ESR study of Er-concentration effect on GaAs;Er, O containing charge carrier, Elmasry Fatma,Zhang Weimin,Okubo Susumu,Ohta Hitoshi,Fujiwara Yasufumi, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 68, No. 2, p. 601-601, 2013/08/26
  • I-1-6 Electrode Formation on GaN-based LED by Printing of Nanoparticle Inks under Atmospheric Pressure, KASHIWAGI Yukiyasu,KOIZUMI Atsushi,TAKEMURA Yasutaka,YAMAMOTO Mari,SAITOH Masashi,TAKAHASHI Masanari,OHNO Toshinobu,FUJIWARA Yasufumi,MURAHASHI Koichiro,OHTSUKA Kuniaki,NAKAMOTO Masami, Conference on Information, Intelligence and Precision Equipment : IIP, The Japan Society of Mechanical Engineers, Vol. 2013, p. 20-21, 2013/03/20
  • GaNを利用した赤色発光ダイオード--世界初Eu添加GaNによる赤色LED (特集 紫外-可視-赤外 最新半導体光源の可能性), 西川 敦,寺井 慶和,藤原 康文, 光アライアンス, 日本工業出版, Vol. 21, No. 4, p. 7-9, 2010/04
  • Organometallic vapor phase epitaxial growth and luminescent properties of Eu-doped GaN-based red light-emitting diodes, Vol. 62, No. 4, p. 57-60, 2010
  • 希土類添加半導体の新展開 : Eu添加GaNを用いた赤色発光ダイオードの作製と特性評価, 西川 敦,寺井 慶和,藤原 康文,テライ ヨシカズ,フジワラ ヤスフミ,ニシカワ アツシ, 大阪大学低温センターだより, 大阪大学低温センター, Vol. 149, p. 15-20, 2010/01
  • Epitaxial growth of spinel ferrite oxide (Al,Ru,Fe) <inf>3</inf>O <inf>4</inf> on a GaAs(001) substrate using a MgO buffer layer, Teruo Kanki,Toshio Kawahara,Naoki Asakawa,Yasushi Hotta,Yoshikazu Terai,Yasufumi Fujiwara,Hitoshi Tabata,Tomoji Kawai, Materials Research Society Symposium Proceedings, Vol. 1034, p. 86-90, 2008
  • Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5 μm light-emitting devices with extremely stable wavelength, Yasufumi Fujiwara,Shouichi Takemoto,Takehiro Tokuno,Keiji Hidaka,Hideki Ichida,Masato Suzuki,Yoshikazu Terai,Yasuo Kanematsu,Masayoshi Tonouchi, Physica Status Solidi (A) Applications and Materials Science, WILEY-V C H VERLAG GMBH, Vol. 205, No. 1, p. 64-67, 2008/01
  • GaAs基板上の(AlRuFe)<sub>3</sub>O<sub>4</sub>薄膜に対するバッファー層の効果, 河原敏男,神吉輝夫,堀田育志,浅川直紀,川合知二,寺井慶和,藤原康文,田畑仁, 応用物理学会学術講演会講演予稿集, Vol. 68th, No. 2, 2007
  • Epitaxial growth of spinel ferrite oxide (Al,Ru,Fe)3O4 on a GaAs(001) substrate using a MgO buffer layer, 2007
  • Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature, YAMAOKA Keisuke,KATO Hideaki,TSUKIYAMA Daisuke,YOSHIZAKO Yuji,TERAI Yoshikazu,FUJIWARA Yasufumi, Vol. 2006, p. 466-467, 2006/09/13
  • Ⅲ-Ⅴ族化合物半導体光デバイスの新しい潮流 【招待講演】, 日本金属学会セミナー「非シリコン半導体の現状と展望」 (2006) pp. 5-10., 2006
  • Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface 【招待講演】, Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42., 2006
  • Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃), Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095., 2006
  • Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan., 2006
  • 波長超安定新規半導体光源の開発 【招待講演】, 第１回けいはんな新産業創出・交流センター シーズフォーラム～光科学が拓く有機材料・無機材料～、中之島センタービル、大阪市、11月15日 (2006)., 2006
  • Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface [Invited talk], Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42., 2006
  • Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃), Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095., 2006
  • Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan., 2006
  • ESR study of Zn-codoping effect on the luminescence efficiency of the Er-2O center in GaAs:Er,O, M. Yoshida,K. Hiraka,H. Ohta,Y. Fujiwara,A. Koizumi,Y. Takeda, AIP Conference Proceedings, AMER INST PHYSICS, Vol. 772, p. 121-122, 2005/06/30
  • Pump and probe reflection study on photoexcited carrier dynamics in Er,O-codoped GaAs, Yasufumi Fujiwara,Kazuhiko Nakamura,Atsushi Koizumi,Yoshikazu Takeda,Masato Suzuki,Masayoshi Tonouchi, AIP Conference Proceedings, AMER INST PHYSICS, Vol. 772, p. 139-140, 2005/06/30
  • Terahertz radiation from Er,O-codoped GaAs surface, Masato Suzuki,Kazuhiko Nakamura,Yasufumi Fujiwara,Atsushi Koizumi,Yoshikazu Takeda,Masayoshi Tonouchi, AIP Conference Proceedings, AMER INST PHYSICS, Vol. 772, p. 131-132, 2005/06/30
  • Pump and probe reflection study on photoexcited carrier dynamics in Er,O-codoped GaAs, AIP Conference Proceedings, Physics of Semiconductors, edited by J. Menendez and C. G. Van de Walle (AIP, New York, 2005), Vol. Vol. 772, pp. 139-140., 2005
  • Investigation of b-FeSi2/Si heterostructures by photoluminescence with different optical configurations, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials (2005) pp. 330-331., 2005
  • Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique, Materials Research Society Symposium Proceedings, Rare-Earth Doping for Optoelectronic Applications, edited by T. Gregorkiewicz, Y. Fujiwara, M. Lipson and J. M. Zavada (Materials Research Society, Pittsburgh, 2005), Vol. Vol. 866, pp. 79-83., 2005
  • Investigation of b-FeSi2/Si heterostructures by photoluminescence with different optical configurations, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials (2005) pp. 330-331., 2005
  • 14aYC-1 X-band ESR measurements of GaAs : Er, O and GaAs : Er, O, Zn, Yoshida M.,Hiraka K.,Ohta H.,Fujiwara Y.,Koizumi A.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 59, No. 2, p. 614-614, 2004/08/25
  • 27pYA-12 The analyses of the luminescent center of GaAs:Er codoped with Oxygen by X-band ESR III, Hiraka K.,Yoshida M.,Okubo S.,Ohta H.,Koizumi A.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 59, No. 1, p. 673-673, 2004/03/03
  • 希土類添加Ⅲ-Ⅴ族半導体による電流注入型発光デバイス, 応用物理, Vol. Vol. 73, No. 2, pp. 224-228., 2004
  • 希土類元素発光中心の形成と光デバイスへの展開―結晶成長による原子配置の制御とデバイス作製―, マテリア, Vol. Vol. 43, No. 4, pp. 312-317., 2004
  • 希土類添加Ⅲ-Ⅴ族半導体の新展開：秩序制御と量子機能 【招待講演】, 第16回日本材料学会半導体エレクトロニクス部門研究会（大阪大学待兼山会館、豊中市） (2004)., 2004
  • 希土類添加化合物半導体からの波長超安定発光と光デバイス展開 【招待講演】, 日本金属学会2004年秋期（第135回）大会 材料戦略セッション３「化合物半導体材料の現状と展望」（秋田大学、秋田市） R12 (2004) p. 602., 2004
  • 希土類添加半導体を用いた電流注入型波長超安定発光デバイスの開発 【招待講演】, 第65回応用物理学会学術講演会「半導体Ｂ」分科内招待講演（東北学院大学、仙台市） 3p-ZL-1 (2004) p. 1290., 2004
  • キド・ワールドに魅せられて～波長超安定光源の開発を夢見て～, The News of Engineering, Osaka University, Vol 28 (2004) p. 3., 2004
  • "希土類添加Ⅲ-Ⅴ族半導体による電流注入型発光デバイス", 応用物理, Vol. 73, No. 2, p. 224-228, 2004
  • :Control of Atom Arrangements by Crystal Growth and Fabrication of Devices, Takeda Yoshikazu,Fujiwara Yasufumi,Tabuchi Masao,Ofuxhi Hironori, Bulletin of the Japan Institute of Metals, The Japan Institute of Metals and Materials, Vol. 43, No. 4, p. 312-317, 2004
  • Injection-type light-emitting devices using rare-earth-doped III-V semiconductors, FUJIWARA Yasufumi,KOIZUMI Atsushi,TAKEDA Yoshikazu, 応用物理, Vol. Vol. 73, No. 2, pp. 224-228., No. 2, p. 224-228, 2004
  • Development of light sources with extremely stable wavelength, The News of Engineering, Osaka University, Vol 28 (2004) p. 3., 2004
  • The analyses of the luminescent center of GaAs : Er codoped with Oxygen by X-band ESR II, Hiraka K.,Yoshida M.,Kunimoto T.,Okubo S.,Ohta H.,Koizumi A.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 58, No. 2, p. 583-583, 2003/08/15
  • Growth Temperature Dependence of Atomic Level Structures at the Heterointerfaces of InP/GaInAs/InP and GaAs/GaInP/GaAs, TABUCHI Masao,HISADOME Shin'ichi,OGA Ryo,KOIZUMI Atsushi,FUJIWARA Yasufumi,TAKEDA Yoshikazu, IEICE technical report. Component parts and materials, The Institute of Electronics, Information and Communication Engineers, Vol. 103, No. 245, p. 13-18, 2003/08/01
  • Fabrication and Application of InAs quantum dots by droplet-hetero epitaxy on GaInAsP and AlInAs lattice-matched with InP substrates, LEE Woo-Sik,OGA Ryo,YOSHIDA Yoshihiro,FUJIWARA Yasufumi,TAKEDA Yoshikazu, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 103, No. 51, p. 13-18, 2003/05/09
  • Growth sequence dependence of threshold current density in GaInP/GaAs/GaInP laser diodes, YOSHIKANE Taketoshi,KOZUMI Atsushi,FUJIWARA Yasufumi,URAKAMI Akira,INOUE Kentaro,TAKEDA Yoshikazu, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 103, No. 51, p. 25-30, 2003/05/09
  • Fabrication of Er-doped GaAs/AlGaAs DH structure and light emitting diode by low-temperature molecular-beam epitaxy, INOUE Daina,MAKI Hidenobu,MORI Takahiro,OGAWA Kazuo,KOIZUMI Atsushi,YOSHIKANE Taketoshi,TABUCHI Masao,FUJIWARA Yaufumi,TAKEDA Yoshikazu, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 103, No. 51, p. 41-46, 2003/05/09
  • Growth and surface morphology of ErP/InP and InP/ErP/InP heterostructures on InP(001), (111)A, and (111)B, HIRATA Tomonari,AKANE Toshimitu,KUNO Takashi,FUJIWARA Yasuhumi,NAKAMURA Arao,TAKWDA Yoshikazu,TAKEDA Miwa, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 103, No. 51, p. 47-52, 2003/05/09
  • Infrared Emission in InGaP/GaAs Hetero-junction, Marui Toshiharu,Nakata Hiroyasu,Ohyama Tyuzi,Fujiwara Yasuhumi,Koizumi Jun,Takeda Yoshikazu, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 58, No. 1, p. 690-690, 2003/03/06
  • 成長中断MOVPE法により作製したInP/InGaAs界面の断面STM観察, 山川市朗,涌井義一,鷲見高雄,大賀涼,藤原康文,竹田美和,中村新男, 応用物理学会学術講演会講演予稿集, Vol. 64th, No. 1, 2003
  • The electronic states of GaAs:Er codoped with Oxygen and Zn analyzed by ESR II, Koyama R.,Hiraka K.,Kunimoto T.,Okubo S.,Ohta H.,Koizumi A.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 57, No. 2, p. 798-798, 2002/08/13
  • The electronic states of GaAs:Er codoped with Oxygen analyzed by ESR, Hiraka K.,Koyama R.,Kunimoto T.,Okubo S.,Ohta H.,Koizumi A.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 57, No. 2, p. 798-798, 2002/08/13
  • Fabrication and optical properties of Er,Ocodoped GaAs/GaInP double-heterostructure light-emitting diodes grown by organometallic vapor phase epitaxy, URAKAMI Akira,KOIZUMI Atsushi,INOUE Kentaro,YOSHIKANE Taketoshi,FUJIWARA Yasufumi,TAKEDA Yoshikazu, Journal of the Japanese Association of Crystal Growth, The Japanese Association for Crystal Growth (JACG), Vol. 29, No. 2, p. 37-37, 2002/07/01
  • Morphology dependence of ErP on crystallographic orientation of InP substrate grown on InP by face-down OMVPE., JINNO Shingo,AKANE Toshihiko,HIRATA Tomonori,KUNO Takashi,YI Yang.,ISOGAI Yoshitaka,WATANABE Naoki,FUJIWARA Yasufumi,NAKAMURA Arao,TAKEDA Yoshikazu, Journal of the Japanese Association of Crystal Growth, The Japanese Association for Crystal Growth (JACG), Vol. 29, No. 2, p. 36-36, 2002/07/01
  • Doping concentration dependence of In composition in GaInP grown on GaAs by organometallic vapor phase epitaxy, YOSHIKANE Taketoshi,INOUE Kentaro,KOIZUMI Atsushi,URAKAMI Akira,FUJIWARA Yasufumi,TAKEDA Yoshikazu, Journal of the Japanese Association of Crystal Growth, The Japanese Association for Crystal Growth (JACG), Vol. 29, No. 2, p. 39-39, 2002/07/01
  • Electroluminescence properties of Er,O-codoped GaAs/GaInP grown by OMVPE, KOIZUMI Atsushi,FUJIWARA Yasufumi,INOUE Kentaro,YOSHIKANE Taketoshi,TAKEDA Yoshikazu, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 102, No. 81, p. 37-42, 2002/05/17
  • Fabrication of InAs quantum dots by droplet epitaxy on InGaAsP lattice-matched with InP substrate, OGA Ryo,LEE Woo-Sik,FUJIWARA Yasufumi,TAKEDA Yoshikazu, Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 102, No. 81, p. 25-30, 2002/05/17
  • 25pYF-8 Interfacial roughness of InGaAs/InP multi quantum well structures studiedby cross-sectional scannning tunneling microscopy, Yamakawa I.,Shiozawa M.,Yamauchi T.,Wakui Y.,Oga R.,Fujiwara Y.,Takeda Y.,Nakamura A., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 57, No. 1, p. 835-835, 2002/03/01
  • 25pWE-5 The electronic states of GaAs:Er codoped with Oxygen and Zn analyzed by ESR, Yoshikawa J.,Koyama R.,Kunimoto T.,Okubo S.,Ohta H.,Koizumi A.,Inoue K.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 57, No. 1, p. 636-636, 2002/03/01
  • Structure and Photoexcited Carrier Dynamics in InGaAs/InP Multiple Quantum Wells, YAMAKAWA I.,SHIOZAWA M.,WAKUI Y.,TANASE K.,HAMANAKA Y.,NAKAMURA A.,OHGA R.,FUJIWARA Y.,TAKEDA Y., IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 101, No. 617, p. 35-40, 2002/01/21
  • Structure and Photoexcited Carrier Dynamics in InGaAs/InP Multiple Quantum Wells, YAMAKAWA I.,SHIOZAWA M.,WAKUI Y.,TANASE K.,HAMANAKA Y.,NAKAMURA A.,OHGA R.,FUJIWARA Y.,TAKEDA Y., Technical report of IEICE. SDM, The Institute of Electronics, Information and Communication Engineers, Vol. 101, No. 620, p. 35-40, 2002/01/21
  • MOVPE法によるInGaAs/InP多重量子井戸構造の断面STM観察, 山川市朗,塩沢学,山内武志,涌井義一,大賀涼,藤原康文,竹田美和,中村新男, 応用物理学関係連合講演会講演予稿集, Vol. 49th, No. 1, 2002
  • 講演会報告［第62回応用物理学会学術講演会（2001年）］, 応用物理 71(1) (2002) p. 101., 2002
  • 講演会報告［第49回応用物理学関係連合講演会（2002年）］, 応用物理 71(6) (2002) pp. 742-743., 2002
  • 1.54um light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy, Extendedn Abstracts of the 21th Electronic Materials Symposium (2002) pp. 221-222., 2002
  • Interfacial roughness of InGaAs/InP multiple quantum well structures grown by OMVPE: A cross-sectional scanning tunneling microscopy study, Proceedings of the 26th International Conference on Physics of Semiconductors (ICPS-26, Edinburgh, UK, July 29-August 2, 2002)., 2002
  • 1.54um light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy, Extendedn Abstracts of the 21th Electronic Materials Symposium (2002) pp. 221-222., 2002
  • Room-temperature electroluminescence at 1.55um from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy, Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology (St. Petersburg, Russia, June 17-21, 2002) pp. 16-19., 2002
  • Interfacial roughness of InGaAs/InP multiple quantum well structures grown by OMVPE: A cross-sectional scanning tunneling microscopy study, Proceedings of the 26th International Conference on Physics of Semiconductors (ICPS-26, Edinburgh, UK, July 29-August 2, 2002)., 2002
  • ErP Growth on InP(001) by Face-Down Organometallic Vapor Phase Epitaxy, WATANABE Naoki,ISOGAI Yoshitaka,JINNO Shingo,YAMAUCHI Takeshi,FUJIWARA Yasuhumi,TAKEDA Yoshikazu,NAKAMURA Arao, IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 101, No. 337, p. 19-24, 2001/10/04
  • The electronic states of GaAs:Dy analyzed by ESR, Yoshikawa J.,Okubo S.,Ohta H.,Isogai Y.,Koide T.,Jinno S.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 56, No. 2, p. 780-780, 2001/09/03
  • Relaxation Dynamics of Electon-Hole Pairs in In_<0.53>Ga_<0.47>As/InP Multiple Quantum Wells II, Tanase K.,Hamanaka Y.,Nakamura A.,Ohga R.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 56, No. 2, p. 595-595, 2001/09/03
  • The electronic states of Ga As: Er codoped with oxygen analyzed by ESR III, Yoshikawa J.,Urakawa C.,Okubo S.,Ohta H.,Koide T.,Kawamoto T.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 56, No. 1, p. 608-608, 2001/03/09
  • Relaxation dynamics of electon-hole pairs In_<0.53>Ga_<0.47>As/InP multiple quantum well, Tanase K.,Hamanaka Y.,Nakamura A.,Ohga R.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 56, No. 1, p. 644-644, 2001/03/09
  • 講演会報告［第61回応用物理学会学術講演会（2000年）］, 応用物理 70(1) (2001) pp. 87-88., 2001
  • Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy, Proceedings of the 13th International Conference on Indium Phosphide and Related Materials (IPRM'01, Nara, Japan, May 14-18, 2001) pp. 405-408., 2001
  • 講演会報告［第48回応用物理学関係連合講演会（2001年）］, 応用物理 70(6) (2001) pp. 724-725., 2001
  • Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy, R. Oga,S. Yamamoto,I. Ohzawa,Y. Fujiwara,Y. Takeda, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IEEE, p. 405-408, 2001
  • Relaxation dynamics of holes in In_<0.53>Ga_<0.47>AS/InP multiple quantum well, Hamanaka Y.,Tanase K.,Nakamura A.,Ohga R.,Nonogaki Y.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 55, No. 2, p. 648-648, 2000/09/10
  • The eelctronic states of GaAs:Er codoped with oxygen analyzed by ESR II, Yoshikawa J.,Urakawa C.,Okubo S.,Ohta H.,Koide T.,Kawamoto T.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 55, No. 2, p. 575-575, 2000/09/10
  • The electronic states of GaAs:Er codoped with oxygen analyzed by ESR, Urakawa C.,Yoshikawa J.,Ohta H.,Koide T.,Kawamoto T.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 55, No. 1, p. 564-564, 2000/03/10
  • OMVPE growth and luminescence properties of rare-earth doped III-V semiconductors, FUJIWARA Yasufumi, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 55, No. 1, p. 583-583, 2000/03/10
  • Ultrafast relaxation dynamics of photoexcited carriersin an In0.53Ga0.47As/InP multiple-quantum well, Proceedings of the 25th International Conference on Physics of Semiconductors (ICPS-25, Osaka, Japan, August 17-22, 2000) (Springer Verlag, Heidelberg, 2001) pp. 621-622., 2000
  • Luminescence properties of Er,O-codoped InGaAs/GaAs MQW structures by organometallic vapor phase epitaxy, Proceedings of the 25th International Conference on Physics of Semiconductors (ICPS-25, Osaka, Japan, August 17-22, 2000) (Springer Verlag, Heidelberg, 2001) pp. 1389-1390., 2000
  • Ultrafast relaxation dynamics of photoexcited carriersin an In0.53Ga0.47As/InP multiple-quantum well, Proceedings of the 25th International Conference on Physics of Semiconductors (ICPS-25, Osaka, Japan, August 17-22, 2000) (Springer Verlag, Heidelberg, 2001) pp. 621-622., 2000
  • Luminescence properties of Er,O-codoped InGaAs/GaAs MQW structures by organometallic vapor phase epitaxy, Proceedings of the 25th International Conference on Physics of Semiconductors (ICPS-25, Osaka, Japan, August 17-22, 2000) (Springer Verlag, Heidelberg, 2001) pp. 1389-1390., 2000
  • 24pC-8 The electronic states of InP:Er codoped with oxygen analyzed by ESR, Urakawa C,Nakashima Y,Ohta H,Koide T,Kawamoto T,Fujiwara Y,Takeda Y, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 54, No. 2, p. 594-594, 1999/09/03
  • 25aC-8 Gashodoluminescence from in GaAn quantum structures on InP(001)fabricated by selective growth, Yamakawa I,Oga R,Hatate H,Nonogaki Y,Fujiwara Y,Takeda Y,Ichida M,Nakamura A, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 54, No. 2, p. 599-599, 1999/09/03
  • 原子レベルで制御して--新しい半導体を創る (名大材料系へようこそ 名古屋大学 材料工学系専攻特集), 藤原 康文,田渕 雅夫, バウンダリ-, コンパス社, Vol. 15, No. 4, p. 18-21, 1999/04
  • 31a-ZG-12 Femtosecond pump and probe spectroscopy in the near-IR region for an InGaAs thin film II, Nishiwaki D.,Hamanaka Y.,Nakamura A.,Nonogaki Y.,Fujiwara Y.,Takeda Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 54, No. 1, p. 220-220, 1999/03/15
  • InP基板上へのErP原子層制御スーパーヘテロエピタキシャル成長とその物性 【招待講演】, 名古屋大学理工科学総合研究センター談話会、名古屋大学、名古屋市千種区、9月22日 (1999)., 1999
  • Fabrication of GaP/InAs islands/GaP (001) structures by organometallic vapor phase epitaxy, FUCHI S.,NONOGAKI Y.,MORIYA H.,FUJIWARA Y.,TAKEDA Y., IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 98, No. 383, p. 7-12, 1998/11/05
  • STM observation of cleaved InGaAs/InP multiple quantum well surfaces, YAMAUCHI T.,BOLOTOV L.,NONOGAKI Y.,FUJIWARA Y.,TAKEDA Y.,NAKAMURA A., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 53, No. 2, p. 379-379, 1998/09/05
  • The electronic states of InP:Er analyzed by ESR, URAKAWA C.,NAKASHIMA Y.,OHTA H.,ITO T.,FUJIWARA Y.,TAKEDA Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 53, No. 2, p. 201-201, 1998/09/05
  • Femtosecond pump and probe spectroscopy in the near-IR region for an InGaAs thin film., NISHIWAKI D.,HAMANAKA Y.,NAKAMURA A.,NONOGAKI Y.,FUJIWARA Y.,TAKEDA Y., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 53, No. 2, p. 202-202, 1998/09/05
  • Quantum size effects of semimetalic ErP islands grown on an InP substrate, TSUCHIYA T.,BOLOTOV L.,ITO T.,FUJIWARA Y.,TAKEDA M.,NAKAMURA A., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 53, No. 2, p. 153-153, 1998/09/05
  • Ga composition dependence of Er-related luminescence in Ga_xIn_<1-x>P:Er (0≦x≦1), KAWAMOTO T.,ITO T.,ICHIDA M.,WATANABE O.,YAMAKAWA I.,FUJIWARA Y.,NAKAMURA A.,TAKEDA Y., IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 98, No. 60, p. 55-60, 1998/05/22
  • Formation of InGaAs quantum dots on InP(001) surface by droplet epitaxy., 野々垣陽一,井口直,淵真悟,大賀涼,守屋博光,藤原康文,竹田美和, 応用物理学関係連合講演会講演予稿集, Vol. 45th, No. 1, 1998
  • Formation of InGaAs quantum dots on InP(001) surface by droplet epitaxy., 野々垣陽一,井口直,淵真悟,大賀涼,守屋博光,藤原康文,竹田美和, 応用物理学関係連合講演会講演予稿集, Vol. 45th, No. 3, 1998
  • Luminescence study on GaInP doped with Er by OMVPE, Proceedings of the 10th International Conference on Indium Phosphide and Related Materials (IPRM'98, Tsukuba, Japan, May 11-15, 1998) pp. 603-606., 1998
  • Quantum size effects in ErP islands grown on the InP(001) surface: crossover of semimetallic states to semiconducting states, Proceedings of the 24th International Conference on Physics of Semiconductors (ICPS-24, Jerusalem, Israel, August 2-7, 1998), edited by D. Gershoni (World Scientific Publishing Co. Pte. Ltd., Singapore, 1998)., 1998
  • Nanoscale ErP islands on InP (100) substrate grown by organometallic vapor phase epitaxy, Proceedings of the 10th International Conference on Indium Phosphide and Related Materials (IPRM'98, Tsukuba, Japan, May 11-15, 1998) pp. 143-146., 1998
  • Luminescence study on GaInP doped with Er by OMVPE, Y. Fujiwara,T. Ito,T. Kawamoto,Y. Takeda, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IEEE, p. 603-606, 1998
  • Quantum size effects in ErP islands grown on the InP(001) surface: crossover of semimetallic states to semiconducting states, Proceedings of the 24th International Conference on Physics of Semiconductors (ICPS-24, Jerusalem, Israel, August 2-7, 1998), edited by D. Gershoni (World Scientific Publishing Co. Pte. Ltd., Singapore, 1998)., 1998
  • Fabrication of InP Sub-micron Pillars for Two-dimensional Photonic Crystals by Reactive Ion Etching, H. Hatate,M. Hashimoto,H. Shirakawa,Y. Fujiwara,Y. Takeda,H. Nakano,T. Tatsuta,O. Tsuji, Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference, JAPAN SOC APPLIED PHYSICS, Vol. 1998-July, No. 12 B, p. 166-167, 1998
  • Fabrication of Two-Dimensional InP Photonic Band-Gap Crystals by Reactive Ion Etching with Inductively Coupled Plasma, HASHIMOTO M.,Hatate H.,FUJIWARA Y.,TAKEDA Y.,NAKANO H.,TATSUTA T.,TSUJI O., IEICE technical report. Component parts and materials, The Institute of Electronics, Information and Communication Engineers, Vol. 97, No. 306, p. 25-30, 1997/10/08
  • Growth of Er-doped GaP by OMVPE with TBP and characterization, ITO T.,KAWAMOTO T.,FUJIWARA Y.,TAKEDA Y., IEICE technical report. Component parts and materials, The Institute of Electronics, Information and Communication Engineers, Vol. 97, No. 306, p. 1-6, 1997/10/08
  • 8p-B-9 Formation of ErP islands on InP(001)surface by OMVPE, L Bolotov,Tsuchiya J.,Fujiwara Y.,Takeda Y.,Nakamura A., Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 52, No. 2, p. 382-382, 1997/09/16
  • 31a-S-6 Optically Detected Cyclotron Resonance(ODCR)in InGaAs, Shimizu N,Nakata H,Ohyama T,Fujiwara Y,Nonogaki Y,Takeda Y, Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), Vol. 52, No. 1, p. 173-173, 1997/03/17
  • Atom configuration around Er atoms doped in InP grown by OMVPE : analysis by Fluorescence EXAFS, OFUCHI H.,Kwamura R.,TSUCHIYA J.,MATSUBARA N.,TABUCHI M.,FUJIWARA Y.,TAKEDA Y., IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 96, No. 292, p. 89-96, 1996/10/11
  • Optically Detected Cyclotron Resonance(ODCR)in Compound Semiconductors, Shimizu N.,Nakata H.,Ohyama T.,Fujiwara Y.,Nonogaki Y.,Takeda Y., Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, The Physical Society of Japan (JPS), Vol. 1996, No. 2, p. 188-188, 1996/09/13
  • Structural analysis of erbium δ-doped InP by OMVPE with RBS-channeling, Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research: Recent Progress in Accelerator, Beam Application (Gunma, Japan, March 18-20, 1996) pp. 337-339., 1996
  • Structural analysis of erbium δ-doped InP by OMVPE with RBS-channeling, Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research: Recent Progress in Accelerator, Beam Application (Gunma, Japan, March 18-20, 1996) pp. 337-339., 1996
  • Hetero-structure analysis of Er δ-doped InP using X-ray CTR scattering, FUJITA K.,MATSUBARA N.,YAMADA N.,ICHIKI S.,TABUCHI M.,FUJIWARA Y.,TAKEDA Y., IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 95, No. 387, p. 13-18, 1995/11/24
  • Fluorescence EXAFS study of atomic configuration around Er atoms homogeneously doped in InP, KAWAMURA K.,OFUCHI H.,MATSUBARA N.,TABUCHI M.,FUJIWARA Y.,TAKEDA Y., IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 95, No. 387, p. 7-12, 1995/11/24
  • 30p-X-7 Interfacial Layer in Homo-Epitaxial InP, Nakata H.,Satoh K.,Ohyama T.,Fujiwara Y.,Nonogaki Y.,Takeda Y, Abstracts of the meeting of the Physical Society of Japan. Sectional meeting, The Physical Society of Japan (JPS), Vol. 1995, No. 2, p. 218-218, 1995/09/12
  • Growth and characterization of Er-doped InP by OMVPE with TBP, MATSUBARA N.,ITO Y.,NONOGAKI Y.,FUJITA K.,FUJIWARA Y.,TAKEDA Y., IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 95, No. 37, p. 1-6, 1995/05/18
  • Electron Cyclotron Resonance and Impurity Absorption in InP, Nakata H,Sato K,Ohyama T,Fujiwara Y,Takeda Y, Abstracts of the meeting of the Physical Society of Japan. Annual meeting, The Physical Society of Japan (JPS), Vol. 50, No. 2, p. 120-120, 1995/03/16
  • Cyclotron resonance in InP grown by organometallic vapor phase epitaxy with TMIn and TBP, H. Nakata,K. Satoh,T. Iwao,T. Ohyama,E. Otsuka,Y. Fujiwara,Y. Takeda, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, I E E E, p. 249-252, 1995
  • Cyclotron resonance in InP grown by organometallic vapour phase epitaxy with TMIn and TBP, Proceedings of the 7th International Conference on Indium Phosphide and Related Materials (IPRM-7, Sapporo, Japan, May 9-13, 1995), edited by O. Wada, pp. 249-252., 1995
  • Effects of hydrogen flow rate on characteristics of III-V compound semiconductors grown by OMVPE with TBP and TBAs, Nonogaki Youichi,Ito Yusuke,Imai Toshiaki,Matsubara Naoteru,Fujiwara Yasufumi,Takeda Yoshikazu, IEICE technical report. Electron devices, The Institute of Electronics, Information and Communication Engineers, Vol. 94, No. 345, p. 7-13, 1994/11/17
  • 31p-M-2 FTIR and Photolumjnescence of Porous Si IV, Nishitani H.,Nakata H.,Oyama T.,Otsuka E.,Fujiwara Y., Abstracts of the meeting of the Physical Society of Japan. Annual meeting, The Physical Society of Japan (JPS), Vol. 48, No. 2, p. 159-159, 1993/03/16
  • 25a-ZG-11 Infrared Absorption and Phtoluminescence in Porous Si III, Nishitani H,Nakata H,Fujiwara Y,Ohyama T,Otsuka E, The Physical Society of Japan (JPS), Vol. 1992, No. 2, p. 111-111, 1992/09/14
  • 30p-W-9 FTIR and Photoluminescence of Porous Si II, Nishitani H.,Nakata H.,Ohyama T.,Otsuka E.,Fujiwara Y.,Ichikawa Y.,Ito T., The Physical Society of Japan (JPS), Vol. 47, No. 2, p. 194-194, 1992/03/12
  • Two peaks on visible photoluminescence spectrum of porous silicon, Proceedings of the 21st International Conference on Physics of Semiconductors, (ICPS-21, Beijing, China, 1992) (World Scientific Publishing Co. Pte. Ltd., Singapore, 1993) pp. 1455-1458., 1992
  • ポーラスSiのフォトルミネッセンスの温度変化および劣化と回復 【招待講演】, 応用物理学会結晶工学分科会第9回結晶工学シンポジウム (1992) pp. 47-50., 1992
  • ポーラスSiにおける可視域発光の劣化現象 【招待講演】, 第19回アモルファス物質の物性と応用セミナー (1992) p. 3., 1992
  • ポーラスSiにおける可視域発光の劣化現象 【招待講演】, 応用物理学会応用電子物性分科会研究会 (1992)., 1992
  • Two peaks on visible photoluminescence spectrum of porous silicon, Proceedings of the 21st International Conference on Physics of Semiconductors, (ICPS-21, Beijing, China, 1992) (World Scientific Publishing Co. Pte. Ltd., Singapore, 1993) pp. 1455-1458., 1992
  • ECR ion-etching characteristics of YBaCuO and BiSrCaCuO thin films, Proceedings of the 2nd Workshop on High-Temperature Superconducting Electronic Devices (Hokkaido, Japan, 1989) pp. 175-180., 1989
  • Cathodeluminescence from high Tc superconducting bulks and thin films, Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89, Tokyo, Japan, June 12-13, 1989) pp. 338-341., 1989
  • Microfabrication technology for Y-Ba-Cu-O thin films, Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89, Tokyo, Japan, 12-13 June 1989) p. 545., 1989
  • ECR ion-etching characteristics of YBaCuO and BiSrCaCuO thin films, Proceedings of the 2nd Workshop on High-Temperature Superconducting Electronic Devices (Hokkaido, Japan, 1989) pp. 175-180., 1989
  • Preparation of as-grown BiPbSrCaCuO thin films by electron-cyclotron-resonance microwave plasma sputtering, Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89, Tokyo, Japan, June 12-13, 1989) pp. 97-100., 1989
  • Microfabrication technology for Y-Ba-Cu-O thin films, Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISEC '89, Tokyo, Japan, 12-13 June 1989) p. 545., 1989
  • ATOMIC PLANAR DOPING TO GaAs BY MOCVD AND ITS APPLICATION TO TWO-DIMENSIONAL ELECTRONIC DEVICES., Yasufumi Fujiwara,Yoshito Fukumoto,Takeshi Kobayashi,Yoshihiro Hamakawa, Conference on Solid State Devices and Materials, p. 159-162, 1987
  • Annealing-temperature dependence of high temperature superconductivity in YBaCuO system, Extended Abstracts of 1987 International Superconductivity Electronics Conference (ISEC '87, Tokyo, Japan, August 28-29, 1987) pp. 229-232., 1987
  • First observation of Er-related luminescence in highTc superconducting Er-Ba-Cu-O system, Extended Abstracts of 1987 International Superconductivity Electronics Conference (ISEC '87, Tokyo, Japan, August 28-29, 1987) p. 401., 1987
  • Annealing-temperature dependence of high temperature superconductivity in YBaCuO system, Extended Abstracts of 1987 International Superconductivity Electronics Conference (ISEC '87, Tokyo, Japan, August 28-29, 1987) pp. 229-232., 1987
  • Se atomic planar doping to GaAs by MOCVD and its application to two-dimensional electronic devices, Y. Fujiwara,Y. Fukumoto,T. Kobayashi,Y. Hamakawa, Extended Abstracts of the 19th Conference on Solid State Devices & Materials (Tokyo, Japan, August 25-27, 1987) pp. 159-162., p. 159-162, 1987
  • First observation of Er-related luminescence in highTc superconducting Er-Ba-Cu-O system, Extended Abstracts of 1987 International Superconductivity Electronics Conference (ISEC '87, Tokyo, Japan, August 28-29, 1987) p. 401., 1987
  • INTERFACE STRESS AT InGaPAs/GaAs HETEROJUNCTION., Sho Shirakata,Yasufumi Fujiwara,Masahiko Kondo,Taneo Nishino,Yoshihiro Hamakawa, Conference on Solid State Devices and Materials, p. 205-208, 1985

Publications

  • "Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy", Materials Research Society Symposium Proceedings, Progress in Semiconductors II--Electronic and Optoelectronic Applications, 2003
  • "ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy", EPR in the 21st Century: Basics and Applications to Material, Life and Earth Sciences, 2002
  • "Organometallic vapor phase and droplet heteroepitaxy of quantum structur", InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices, 2000
  • "Growth condition dependences of optical properties of Er in InP and local structures", InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices, 2000
  • "Formation of InGaAs Dots on InP Substrate with Lattice-Matching Growth Condition by Droplet Heteroepitaxy", Institute of Physics Conference Series, 1999
  • "High Thermal-Stability of Er-Related Luminescence and Atom Configurations around Er Atoms Doped in InP by OMVPE Growth", Institute of Physics Conference Series, 1999
  • エンサイクロペディア電子情報通信ハンドブック, オーム社, 1998
  • "Extremely Sharp Er-Related Luminescence in Er-Doped GaP Grown by OMVPE with TBP", Institute of Physics Conference Series, 1998
  • "EXAFS and X-Ray CTR Scattering Characterization of Er Doped in InP by OMVPE", Materials Research Society Symposium Proceedings, 1996
  • "Erbium δ-Doping to InP by OMVPE", Institute of Physics Conference Series, 1996
  • "Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-toxic P Source", Materials Science Forum, 1995
  • "Visible Photoluminescence of Porous Silicon", Materials Science Forum, 1993
  • 光・薄膜技術マニュアル, オプトロニクス社, 1989
  • 高温超伝導材料プロセスと応用技術, アイピーシー出版部, 1989
  • "Characterization of High Tc Superconductors by Luminescence Method", Progress in High Temperature Superconductivity, 1989
  • "Thin Films And Their Applications in Opto-Electronics", Optronics, 1989
  • "Process and Application of High Tc Superconductors", IPC Press, 1989
  • "Luminescence Study of New High Tc Oxide Superconductors", Advances in Superconductivity, 1988
  • "Characterization of LnBaCuO(Ln=Er, Eu, Gd. . . )Ceramics by Photo and Thermally Stimulate Luminescence", Proc. MRS Intern. Mtg. Advanced Materials, 1988
  • "Local Strain Field in In-Doped Semi-Insulating GaAs", Semi-Insulating III-V Materials, 1986
  • "Characterization of Deep Impurities in GaAs by Photoluminescence", Proc. SPIE Symp. Spectroscopic Characterization Techniques for Semiconductor Technology, 1984
  • "Deep Acceptor Photoluminescence in GaAs", Institute of Physics Conference Series, 1982
  • "Photoluminescence Studies of Acceptor Impurities in InGaAsP", Institute of Physics Conference Series, 1981

Industrial Property Rights

  • 窒化物半導体基板とその製造方法および半導体デバイス, 藤原康文,朱婉新,小泉淳,Brandon Mitchell,Tom Gregorkiewicz, 特許6876337, 特願2016-229410, 出願日:2016/11/25, 登録日:2021/04/28
  • AlInN膜および２次元フォトニック結晶共振器とこれらの製造方法ならびに半導体発光素子, 藤原康文,稲葉智宏, 特許6788301, 特願2017-036446, 出願日:2017/02/28, 登録日:2020/11/04
  • 赤色発光半導体素子とその製造方法, 藤原康文,西川敦,寺井慶和, 特許6450061, 特願2011-268141, 出願日:2011/12/07, 登録日:2018/12/14
  • 赤色発光半導体素子とその製造方法, 藤原康文,西川敦,寺井慶和, 特許5896454, 特願268143, 出願日:2011/12/07, 登録日:2018/03/11
  • 赤色発光半導体素子とその製造方法, 藤原康文,小泉淳, 特許6222684, 特願2013-047022, 出願日:2013/03/08, 登録日:2017/10/13
  • 窒化物半導体素子用基板とその製造方法、および赤色発光半導体素子とその製造方法, 藤原康文,小泉淳,寺井慶和, 特許6048896, 特願2012-184347, 出願日:2012/08/23, 登録日:2016/12/02
  • 赤色発光半導体素子および赤色発光半導体素子の製造方法, 西川敦,藤原康文,寺井慶和,川崎隆司,古川直樹, 特許5388041, 特願2009-112535, 出願日:2009/05/07, 登録日:2013/10/13
  • 希土類添加半導体素子とその製造方法, 藤原康文,上村強,宮永和恒,神﨑伯夫, 特願2021-120455, 出願日:2021/07/21
  • 希土類添加窒化物半導体素子とその製造方法、半導体ＬＥＤ、半導体レーザー, 藤原康文,市川修平,竹尾敦志,舘林潤, 特願2021-028698, 出願日:2021/02/25
  • 近赤外発光半導体素子とその製造方法, 市川修平,吉岡尚輝,藤原康文,舘林潤, 特願2019-160339, 出願日:2019/09/03
  • 表示装置およびその製造方法, 藤原康文,上野山雄,舘林潤,市川修平, 特願2019-145022, 出願日:2019/08/07
  • 窒化物半導体デバイスとその基板、および希土類元素添加窒化物層の形成方法, 市川修平,藤原康文,舘林潤, 特願2019-029938, 出願日:2019/02/22
  • 新規な結晶材料

Works

  • 希土類元素添加半導体を基盤とした波長超安定新規発光デバイスの高性能化, 2004 -
  • 原子レベル制御による新規量子機能材料の創製, 2004 -
  • 希土類添加Ⅲ-Ⅴ族半導体を用いた波長超安定発光デバイスの開発, 2004 -
  • 希土類元素添加半導体における電流励起光学利得とその最適化, 2004 -
  • 希土類元素添加半導体の新展開：秩序制御による新しいスピン物性の発現, 2004 -

Awards

  • Best Paper Award, Yasufumi Fujiwara,Shuhei Ichikawa,Dolf Timmerman,Jun Tatebayashi, International Display Workshop 2021 (IDW'21), 2021/12
  • 大阪大学賞（教育貢献部門）, 藤原康文, 国立大学法人大阪大学, 2021/11
  • 蛍光体賞, 電気化学会蛍光体同学会, 2021/01
  • 文部科学大臣表彰科学技術賞（研究部門）, 文部科学省, 2020/04
  • 業績賞, 日本学術振興会光電相互変換第125委員会, 2019/03
  • フェロー, 公益社団法人応用物理学会, 2017/09
  • レーザー学会賞（論文賞）, 一般社団法人レーザー学会, 2015/05
  • 平成26年国立大学法人大阪大学総長顕彰, 国立大学法人大阪大学, 2014/07
  • 平成25年国立大学法人大阪大学総長顕彰, 国立大学法人大阪大学, 2013/08
  • JJAP/APEX編集貢献賞, 公益社団法人応用物理学会, 2013/03
  • 平成23年国立大学法人大阪大学研究功績賞（研究部門）, 国立大学法人大阪大学, 2011/08
  • 第32回応用物理学会優秀論文賞, 社団法人応用物理学会, 2010/09
  • 平成21年度国立大学法人大阪大学教育・研究功績賞, 国立大学法人大阪大学, 2010/02
  • VBL情報・システムプロジェクト最優秀融合研究企画賞, 大阪大学, 2005/03
  • 光都ビジネスコンペin姫路 優秀賞, 姫路商工会議所, 2004/03
  • Academic Prize, The NAGAI Foundation for Science and Technology, The NAGAI Foundation for Science and Technology, 2002/03
  • 楠本賞, 大阪大学, 1981/03

Presentations

  • Enhanced Eu luminescence in GaN: Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities, Jun Tatebayashi,Shuhei Ichikawa,Yasufumi Fujiwara, Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, 2020/09
  • Evaluations of Selective Dry Etching of GaAs Core Layer having Embedded InAs Quantum Dots Using Optical Measurements towards Photonic Crystal Laser Fabrication, Takumi Okunaga,Tatsuhiro Nozue,Yifan Xiong,Hirotake Kajii,Masato Morifuji,Jun Tatebayashi,Yasufumi Fujiwara,Tsutomu Nishihashi,Masahiko Kondow, 2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2020/09
  • Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition, Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan., 2006
  • Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface [Invited Talk], Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42., 2006
  • Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃), Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095., 2006
  • Ⅲ-Ⅴ族化合物半導体光デバイスの新しい潮流 【招待講演】, 日本金属学会セミナー「非シリコン半導体の現状と展望」 (2006) pp. 5-10., 2006
  • INTERFACE STRESS AT InGaPAs/GaAs HETEROJUNCTION., Sho Shirakata,Yasufumi Fujiwara,Masahiko Kondo,Taneo Nishino,Yoshihiro Hamakawa, Conference on Solid State Devices and Materials, 1985
  • CHARACTERIZATION OF RESIDUAL STRESS IN SEMI-INSULATING GaAs:Cr BY PHOTOLUMINESCENCE METHOD., Y. Fujiwara,A. Kojima,T. Nishino,Y. Hamakawa,K. Yasutaka,M. Umeno,H. Kawabe, Conference on Solid State Devices and Materials, 1984

Committee Memberships

  • Japan Society of Applied Physics, Vice President, 2020/03 - 2022/03
  • （社）日本金属学会, セミナー・シンポジウム委員会委員, 2009 -
  • （社）日本材料学会, 学会将来構想WGメンバー, 2008 -
  • （社）日本金属学会, 分科会委員会委員, 2007 -
  • Japanese Journal of Applied Physics, 編集委員, 2004 -